TW201139506A - Sulphonated polyketones as a counter-ion of conductive polymers - Google Patents

Sulphonated polyketones as a counter-ion of conductive polymers Download PDF

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TW201139506A
TW201139506A TW100109303A TW100109303A TW201139506A TW 201139506 A TW201139506 A TW 201139506A TW 100109303 A TW100109303 A TW 100109303A TW 100109303 A TW100109303 A TW 100109303A TW 201139506 A TW201139506 A TW 201139506A
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optionally substituted
repeating unit
formula
group
composite
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Knud Reuter
Wilfried Loevenich
Arnulf Scheel
Andreas Elschner
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Heraeus Clevios Gmbh
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    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/06Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
    • H01B1/12Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances organic substances
    • H01B1/124Intrinsically conductive polymers
    • H01B1/127Intrinsically conductive polymers comprising five-membered aromatic rings in the main chain, e.g. polypyrroles, polythiophenes
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    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
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    • H01B1/06Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G11/00Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
    • H01G11/22Electrodes
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    • H01G11/48Conductive polymers
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    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G11/00Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
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    • C08G2261/00Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G2261/10Definition of the polymer structure
    • C08G2261/14Side-groups
    • C08G2261/145Side-chains containing sulfur
    • C08G2261/1452Side-chains containing sulfur containing sulfonyl or sulfonate-groups
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    • C08G2261/30Monomer units or repeat units incorporating structural elements in the main chain
    • C08G2261/32Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain
    • C08G2261/322Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain non-condensed
    • C08G2261/3223Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain non-condensed containing one or more sulfur atoms as the only heteroatom, e.g. thiophene
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    • C08G2261/34Monomer units or repeat units incorporating structural elements in the main chain incorporating partially-aromatic structural elements in the main chain
    • C08G2261/344Monomer units or repeat units incorporating structural elements in the main chain incorporating partially-aromatic structural elements in the main chain containing heteroatoms
    • C08G2261/3442Polyetherketones
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    • C08G2261/70Post-treatment
    • C08G2261/79Post-treatment doping
    • C08G2261/794Post-treatment doping with polymeric dopants
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    • C08L71/00Compositions of polyethers obtained by reactions forming an ether link in the main chain; Compositions of derivatives of such polymers

Abstract

The present invention relates to a complex comprising at least one optionally substituted conductive polymer and at least one functionalized polyketone, characterized in that the polyketone is a polymer which comprises a (-CO-) group in its recurring units and in which this (-CO-) group is linked with two aromatic groups. The present invention also relates to a process for the preparation of a complex, a complex obtainable by this process, the use of the complex, the use of sulphonated polyketones, a coated substrate, a process for the production of a coated substrate, the coated substrate obtainable by this process and an electronic component.

Description

201139506 六、發明說明: 本發明係關於包含官能化多銅及導電高分子之新賴聚 電解質複合物,製備複合物之方》去,可藉由此方法獲得之 複合物’該複合物之用途’磺化多嗣之用途,經塗佈基板, 製造經塗佈基板的方&,可藉由此方法獲得之該經塗佈基 板’及電子組件。 導電高分子之經濟重要性日益增加,因為就可加工 吐、重量及藉由化學修飾進行有針對性的性質調整而言高 刀子具有超過金屬之優點。已知π結合高分子之實例為聚 吡咯、聚噻吩、聚苯胺、聚乙炔、聚苯及聚(對伸苯基-伸乙 烯基)。導電高分子層可用於不同工業用途,例如用作電容 益中之高分子相對電極或用於貫通電鍍電子電路板。藉由 自單體前驅物(例如視情況經取代之噻吩、吡咯及苯胺及 其特疋視情況存在之寡聚衍生物)以化學方法或以電化學 方法來製備導電高分子。詳言之,廣泛使用化學氧化聚合, 因為其容易在工業上在液體介質中或在不同基板上實現。 工業上使用之尤其重要的聚噻吩為聚(伸乙基-3,4-二氧 基塞吩)(PED〇T或PEDT),其例如描述於ΕΡ0339340Α2 中且藉由化學聚合伸乙基_3,4-二氧基噻吩(EDOT或EDT) 來製備’且其在氧化形式下具有極高導電性。多種聚(伸烷 基-3,4-二氧基噻吩)衍生物(尤其聚(伸乙基_3,4-二氧基噻吩) '于生物)及其早體單元、合成及用途之概述由L. Groenendaal, 201139506 F· J嶋s,D. Freitag,η. Pielartzik 及】r却仙,仏201139506 VI. INSTRUCTIONS: The present invention relates to a novel composite electrolyte comprising a functionalized polycopper and a conductive polymer, and a composite obtained by the method, the use of the composite The use of the sulfonated polyruthenium, the coated substrate, the side of the coated substrate, the coated substrate and the electronic component obtained by the method. The economic importance of conductive polymers is increasing because high knives have advantages over metals in terms of processability, weight and targeted property adjustment by chemical modification. Examples of known π-binding polymers are polypyrrole, polythiophene, polyaniline, polyacetylene, polyphenylene and poly(p-phenylene-vinylene). The conductive polymer layer can be used in various industrial applications, for example, as a polymer counter electrode in a capacitor or as a through-plated electronic circuit board. The conductive polymer is prepared chemically or electrochemically by a monomer precursor (e.g., an optionally substituted thiophene, pyrrole, and aniline, and an oligomeric derivative thereof, which is optionally present). In particular, chemical oxidative polymerization is widely used because it is easily industrially implemented in a liquid medium or on a different substrate. A particularly important polythiophene for industrial use is poly(extended ethyl-3,4-dioxythiophene) (PED〇T or PEDT), which is described, for example, in ΕΡ0339340Α2 and is extended by chemical polymerization of ethyl _3. , 4-dioxythiophene (EDOT or EDT) to prepare 'and its very high conductivity in the oxidized form. Overview of various poly(alkyl-3,4-dioxythiophene) derivatives (especially poly(extended ethyl-3,4-dioxythiophene)' in organisms) and their early units, synthesis and use By L. Groenendaal, 201139506 F· J嶋s, D. Freitag, η. Pielartzik and 】r is fairy, 仏

Mater. 12,(2000)第 48M94 頁給出。 例如 EP 〇 440 95 7 a? Φ μ 7 Α2中所揭示之具有聚陰離子之 PED〇T(例如聚苯乙烯確酸(pss)) @分散液已獲得特定 。業重要丨生[具有諸多用途之透明導電膜(例如作為抗 静電塗層或作為有機發光二極體(OLED )中之電洞注入 曰ΈΡ 1 227 5 29 A2中所示)可由此等分散液製造。 在此隋升^/下,在聚陰離子水溶液中進行ed〇t之聚合, :形成聚電解質複合物。在技術領域中包含用於電荷補 償之高分子陰離子作為相對離子之陽離子性聚。塞吩亦通常 稱為聚噻吩/聚陰離子複合物。由於PED〇T作為聚陽離子及 pss作為聚陰離子之聚電解質性質,在此情形下,此複合物 不為真溶液,而是分散液。在此情形下高分子或高分子之 部分溶解或分散的程度視聚陽離子與聚陰離子之重量比、 回分子之電荷密度、環境之鹽濃度及周圍介質之性質而定 (V. Kabanov, Russian Chemical Reviews 74, 2005, 3-20 ) 〇 在此情形下,過渡形式可為流體。因此,在下文中術語「分 政(dispersed)」與「溶解(dissolved)」之間無區別。同樣, 刀月欠液(dispersing)」與「溶液(s〇iui:i〇n)」之間或「分 散劑(dispersing agent)」與「溶劑(solvent)」之間的區別 極小。更確切而言,在下文中此等術語同等使用。 PEDOT與PSS之複合物已用於如上文所述之多種應 用。然而’此等複合物之特徵為固有高酸度。此係基於pss 之高酸度。PSS之當量為184 g/mo卜PEDOT:PSS分散液之 201139506 pH值相應地很低。因此,用作〇lED中之電洞注入層的典 型PEDOT:PSS分散液的pH值為1.5。此低pH值可例如導 致蚀刻OLED中之氧化銦錫(ιτο)透明電極。因此,In及 Sn離子移動且可擴散於相鄰層中(M p de J〇ng等人,App丨Mater. 12, (2000) is given on page 48M94. For example, PED〇T (e.g., polystyrene acid (pss)) @dispersion having a polyanion disclosed in EP 440 440 95 7 a? Φ μ 7 Α 2 has been specified. Important hygiene [a transparent conductive film with many uses (for example, as an antistatic coating or as a hole injection in an organic light-emitting diode (OLED) 曰ΈΡ 1 227 5 29 A2) can be dispersed accordingly Liquid manufacturing. At this time, the polymerization of ed〇t was carried out in an aqueous polyanion solution to form a polyelectrolyte composite. In the technical field, a polymer anion for charge compensation is included as a cationic cation of a relative ion. The phenotype is also commonly referred to as a polythiophene/polyanion complex. Due to the polyelectrolyte nature of PED〇T as a polycation and pss as a polyanion, in this case the complex is not a true solution but a dispersion. In this case, the degree of partial dissolution or dispersion of the polymer or polymer depends on the weight ratio of the polycation to the polyanion, the charge density of the molecule, the salt concentration of the environment, and the nature of the surrounding medium (V. Kabanov, Russian Chemical). Reviews 74, 2005, 3-20 ) 〇 In this case, the transitional form can be a fluid. Therefore, there is no difference between the terms "dispersed" and "dissolved" hereinafter. Similarly, the difference between "dispersing" and "solution (s〇iui: i〇n)" or between "dispersing agent" and "solvent" is minimal. Rather, these terms are equally used hereinafter. The complex of PEDOT and PSS has been used in a variety of applications as described above. However, such composites are characterized by inherently high acidity. This is based on the high acidity of pss. The equivalent of PSS is 184 g/mo, and the pH of the PEDOT:PSS dispersion is relatively low. Therefore, the typical PEDOT:PSS dispersion used as the hole injection layer in the 〇lED has a pH of 1.5. This low pH can, for example, result in etching the indium tin oxide (ιτο) transparent electrode in the OLED. Therefore, In and Sn ions move and can diffuse in adjacent layers (M p de J〇ng et al., App丨

Phys· Lett. 77,(2000),2255-2257 ),因此對 OLED 之壽命具 有不利作用。Phys· Lett. 77, (2000), 2255-2257), thus having an adverse effect on the lifetime of OLEDs.

Si-Jeon Kim 等人,Chem. Phys. Lett· 386',(2004),2-7 及Si-Jeon Kim et al., Chem. Phys. Lett· 386', (2004), 2-7 and

Jaengwan Chung 等人,〇rganic Eiectr〇nics 9,(2009) 869-872已報導PSS發生熱分解,從而分裂出硫酸根,亦即 PSS不穩定。此硫酸根可例如對〇LED之壽命具有不利作 用0 在 EP 1 564 250 A1 及 WO 2004/032306 A2 中,Elschner 等人已描述全氟化磺酸高分子與導電高分子之混合物作為 OLED中之電洞注人層。使用此等混合物製造〇led中之電 洞注入層’有可能證明氣化高分子之存在可使# 0LED之 壽命得到改良。然❿,包含氟化高分子之層的特徵為高接 觸角。此使其難以沈積其他基於溶劑之層,因為高 使得膜難以形成。 m要包含導電高分子及聚陰離子之新賴複合 勿。^之丄需要其中聚陰離子之特徵為酸度低於m且 ^有增加穩定性之複合物。此外’需要適於製&咖〇之Jaengwan Chung et al., 〇rganic Eiectr〇nics 9, (2009) 869-872 have reported thermal decomposition of PSS, which splits out sulfate, ie PSS is unstable. This sulphate can have an adverse effect, for example, on the lifetime of 〇LEDs. In EP 1 564 250 A1 and WO 2004/032306 A2, Elschner et al. have described mixtures of perfluorinated sulfonic acid polymers and conductive polymers as OLEDs. The hole is injected into the layer. The use of such a mixture to produce a hole injection layer in the ’led has the potential to prove that the presence of the vaporized polymer improves the lifetime of the #0LED. Then, the layer containing the fluorinated polymer is characterized by a high contact angle. This makes it difficult to deposit other solvent-based layers because the film is difficult to form. m should contain a new polymer of conductive polymer and polyanion. It is desirable that the polyanion be characterized by a complex having an acidity below m and having increased stability. In addition, 'need to be suitable for & curry

之特徵為長壽命。 層之特徵為低接觸角且〇LED 201139506 現已意外地發現’導電高分子與官能化多酮之複合物 適合用作製造透明導電膜之聚陰離子,且此等複合物之特 徵為高穩定性。此外’已發現該等導電膜適合用作〇LED 中之電洞注入層’若藉由添加驗來增加分散液之pH值,則 該等OLED之壽命尤其長。 因此,本發明提供一種包含至少一種視情況經取代之 導電高分子及至少一種官能化多酮之複合物,其特徵在於 该多酮為在其重複單元中包含至少一個(_c〇_)基團(酮基) 之高分子且在此等重複單元中此(_c〇_)基團經兩個芳族基 連接。 在本發明之複合物的一較佳具體實例中,官能化多酮 包含通式(I)重複單元It is characterized by a long life. The layer is characterized by a low contact angle and 〇LED 201139506 has now surprisingly found that a composite of a conductive polymer and a functionalized polyketone is suitable for use as a polyanion for the production of a transparent conductive film, and such composites are characterized by high stability. . Further, it has been found that the conductive films are suitable for use as a hole injection layer in a ruthenium LED. If the pH of the dispersion is increased by addition, the lifetime of the OLEDs is particularly long. Accordingly, the present invention provides a composite comprising at least one optionally substituted conductive polymer and at least one functionalized polyketone, characterized in that the polyketone comprises at least one (_c〇_) group in its repeating unit. A polymer of (keto group) and in this repeating unit, the (_c〇_) group is bonded via two aromatic groups. In a preferred embodiment of the complex of the present invention, the functionalized polyketone comprises a repeating unit of formula (I)

其中among them

An及Αι*2可為相同或不同的,且為視情况經取代之芳 鵝基團,An and Αι*2 may be the same or different and are optionally substituted as a goose group.

Ri為具有1至80個碳原子、(_C0_)基團或氧原子之視 情況經取代之有機基團且 η為5至5,_、較佳1〇至3 〇〇〇、尤其較佳2〇至2,議 之整數。 201139506 在本發明之情形下, 贫试“ 私為環狀共軛系統,較佳盍— 蔡、蒽及聯苯,尤其較佳A — 毕乂佳為笨、 本’上述化合物有可能相味 經取代。 qj此現情況 此外,在本發明之情ρ τ 渭肜下,具有1至80個碳原子 機基團較佳為例如由-或多個選自^下㈣Μ的= 構成的基團:醚、酮、砜' 硫化物、醋 '碳酸醋、酿胺、 醯亞胺及芳㈣(尤其伸笨基、伸聯苯基及萘)以及脂族 基(尤其亞甲基、伸乙基 '伸丙基及亞異丙基),個別基團 亦有可能重複存在於該基團中。芳族及脂族基團可另外經 取代。 除非另外明確提及,否則在本文及下文中「經取代」 意謂經選自由以下組成之系列的基團取代:烷基,較佳為 cI_C20烷基’極尤其較佳為曱基或乙基;環烷基,較佳為 C^Ci2環'坑基;芳基,較佳為C^-Ci4芳基;鹵素原子,較 佳為Cl、Br或I;謎基;硫鍵基,·一硫鍵,亞〗風基;ί風基; 磺酸酯基;胺基;醛基;酮基;羧酸酯基;羧酸基;碳酸 酯基;羧酸酯基;膦酸基;膦酸醋基;氰基;烷基矽烷基; 烷氧基矽烷基;及羧基醯胺基。 術語「CVC20烷基(Ci-Cw-alkyl)」表示直鏈或分支鏈 ci-C2〇烷基,例如曱基、乙基、正丙基或異丙基、正丁基、 異丁基、第二丁基或第三丁基、正戊基、1-甲基丁基、2-曱基丁基、3 -甲基丁基、1-乙基丙基、丨,1_二曱基丙基、1,2-二甲基丙基、2,2-二甲基丙基、正己基、正庚基、正辛基、 8 201139506 2-乙基己基、正壬基、正癸基、正十一烷基、正十二烷基、 正十三烷基、正十四烷基、正十五烷基、正十六烷基、正 十七烷基、正十八烷基、正十九烷基或正二十烷基。術詳 「C3-C12環烷基(C3-C12-cycloalkyl )」表示環烷基,例如環 丙基、環丁基、環戊基、環己基、環庚基、環辛基、環壬 基或環癸基’且術語「C6-C14芳基(C6-Cl4-aryl)」表示C6-Ci4 芳基,諸如苯基或萘基。 本發明之複合物中所包含的官能化多酮之特徵較佳為 5.000 g/mol 至 500,000 g/mo卜尤其較佳 i〇,〇〇〇 g/m〇1 至 100.000 g/mol 及更佳 20,000 g/mol 至 50,000 g/mol 之分子 量(Mw )。此等官能化多酮可藉由基本上已知之方法製備 (S. Swier, Y. S. Chun, J. Gasa, Μ. T. Shaw A R. A. Weiss, Polym. Engin· Sci. 2005,第 1081-1091 頁;S. Vetter, B. Ruffmann,J. Buder 及 S. P. Nunes,J. Membrane Sci. 260 (2005),181-186; L. Li,J. Zhang 及 Y. Wang,J. Membrane Sci. 226 (2003), 159-167 ; B. Bauer, D. J. Jones, J. Roziere, L.Ri is an optionally substituted organic group having 1 to 80 carbon atoms, a (_C0_) group or an oxygen atom, and η is 5 to 5, _, preferably 1 Å to 3 Å, particularly preferably 2 〇 to 2, the integer of the discussion. 201139506 In the case of the present invention, the poor test "private ring conjugate system, preferably 盍 - Cai, 蒽 and biphenyl, especially preferably A - Bi Yijia is stupid, this 'the above compounds are likely to taste Further, in the present case, in the case of the present invention, the organic group having 1 to 80 carbon atoms is preferably a group consisting of, for example, - or a plurality of = selected from the group consisting of: Ethers, ketones, sulfones' sulphides, vinegar's carbonated vinegars, enriched amines, quinones and aromatics (iv) (especially extended, extended biphenyls and naphthalenes) and aliphatic groups (especially methylene, ethylidene) Prolonged propyl and isopropylidene groups, individual groups may also be repeatedly present in the group. The aromatic and aliphatic groups may be additionally substituted. Unless otherwise explicitly mentioned, in this article and below Substituted" means substituted by a group selected from the group consisting of alkyl, preferably cI_C20 alkyl 'very, particularly preferably fluorenyl or ethyl; cycloalkyl, preferably C^Ci2 ring' An aryl group, preferably a C^-Ci4 aryl group; a halogen atom, preferably Cl, Br or I; a mystery group; a sulfur bond group, a sulfur bond, a subscript ;; kiln; sulfonate; amine; aldehyde; keto; carboxylate; carboxylic acid; carbonate; carboxylate; phosphonic acid; Alkyl fluorenyl; alkoxy fluorenyl; and carboxy guanylamino. The term "Ci-Cw-alkyl" means a straight or branched ci-C2 alkyl group, such as decyl, ethyl, n-propyl or isopropyl, n-butyl, isobutyl, Dibutyl or tert-butyl, n-pentyl, 1-methylbutyl, 2-mercaptobutyl, 3-methylbutyl, 1-ethylpropyl, hydrazine, 1-diisopropylpropyl 1,2-dimethylpropyl, 2,2-dimethylpropyl, n-hexyl, n-heptyl, n-octyl, 8 201139506 2-ethylhexyl, n-decyl, n-decyl, n-ten Monoalkyl, n-dodecyl, n-tridecyl, n-tetradecyl, n-pentadecyl, n-hexadecyl, n-heptadecyl, n-octadecyl, n-nonadecane Base or n-icosyl. The term "C3-C12-cycloalkyl" means a cycloalkyl group such as cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, cycloheptyl, cyclooctyl, cyclodecyl or "Cyclohexyl" and the term "C6-C14 aryl (C6-Cl4-aryl)" denotes a C6-Ci4 aryl group such as phenyl or naphthyl. The functionalized polyketone contained in the composite of the present invention is preferably characterized by from 5.000 g/mol to 500,000 g/mo, particularly preferably i〇, 〇〇〇g/m〇1 to 100.000 g/mol and more preferably Molecular weight (Mw) of 20,000 g/mol to 50,000 g/mol. Such functionalized polyketones can be prepared by a substantially known method (S. Swier, YS Chun, J. Gasa, Μ. T. Shaw A RA Weiss, Polym. Engin. Sci. 2005, pp. 1081-1091; S. Vetter, B. Ruffmann, J. Buder and SP Nunes, J. Membrane Sci. 260 (2005), 181-186; L. Li, J. Zhang and Y. Wang, J. Membrane Sci. 226 (2003) , 159-167 ; B. Bauer, DJ Jones, J. Roziere, L.

Tchicaya, G. Alberti, M. Casciola, L. Massinelli, A. Peraio, S, Besse Sl E. Ramunni, J. New Mater. Electrochem. Systems, 3, 93-98 (2000); F. Trotta, E. Drioli,G. Moraglio 及 E. B. Poma, J. Appl. Polym. Sci. 70,477-482 (1998) ; S. M. J. Zaidi, S. D. Mik-hailenko, G. P. Robertson, M. D. Guiver A S. Kaliaguine, J. Membrane Sci. 173 (2000),17-34; C. Bailly,D. J. Williams, F. E. Kharasz 及 W. J. MacKnight,Polymer 1987 (28), 3009-1016 ; X. Jin, Μ. T· Bishop, T. S· Ellis 及 F. E· Kharasz, 9 201139506Tchicaya, G. Alberti, M. Casciola, L. Massinelli, A. Peraio, S, Besse Sl E. Ramunni, J. New Mater. Electrochem. Systems, 3, 93-98 (2000); F. Trotta, E. Drioli, G. Moraglio and EB Poma, J. Appl. Polym. Sci. 70, 477-482 (1998); SMJ Zaidi, SD Mik-hailenko, GP Robertson, MD Guiver A S. Kaliaguine, J. Membrane Sci. 173 (2000 ), 17-34; C. Bailly, DJ Williams, FE Kharasz and WJ MacKnight, Polymer 1987 (28), 3009-1016; X. Jin, Μ. T. Bishop, T. S. Ellis and F. E. Kharasz , 9 201139506

Br. Polymer J. 17(1),4-10 (1985))。 在本發明之複合物的一較佳具體實例中,官能化多酮 包含通式(II)重複單元 0 _R2—^ATf 广 ηBr. Polymer J. 17(1), 4-10 (1985)). In a preferred embodiment of the complex of the present invention, the functionalized polyketone comprises a repeating unit of the formula (II) 0 _R2 - ^ATf η

(II 其中 ΑΓ|及Ah可為相同或不同的,且表示視情況經取代之 芳族, \,及X2可為相同或不同的且各表示磺醆、磺酸醋、膦 酸、膦酸酯、羧酸或羧酸酯基團, a及b可為相同或不同的,且各彼此獨立地表示在〇至 2範圍内之整數或非整數,非整數意謂所提及之酸並不存在 於每個重複單元中,而僅存在於重複單元之相應部分中, R2具有與R,相同之含義,且 η為5至5,000、較佳10至3,000、尤其較佳汕至2 〇〇〇 之整數。 ^ 包含式(Π)重複單元之多酮的官能化可在所有重複單 元上或然而僅在一些相應重複單元上發生,亦即關於&及匕 之非整數意謂(包括以下)所提及之官能基&或&並不存 在於每個重複單元中,而僅存在於重複單元之相應部分中。 極尤其較佳地,官能化多酮為磺化多酮(&及Χ2 =磺 201139506 酸或績酸醋基圍),其製備例如由Schuster等人 (Macromolecules 2009, 42(8),第 3 129-3 137 頁)描述。 在本發明之複合物的一極尤其較佳具體實例中,官能 化多酮包含通式(IIa )重複單元,其中芳族仏及A。在各 種情況下皆表示苯環:(II wherein ΑΓ| and Ah may be the same or different and represent an optionally substituted aromatic, \, and X2 may be the same or different and each represents a sulfonium, sulfonate, phosphonic acid, phosphonate a carboxylic acid or a carboxylate group, a and b may be the same or different and each independently represents an integer or a non-integer in the range of 〇 to 2, and a non-integer means that the acid mentioned does not exist. In each repeating unit, but only in the corresponding portion of the repeating unit, R2 has the same meaning as R, and η is 5 to 5,000, preferably 10 to 3,000, particularly preferably 汕 to 2 〇〇〇 Integer. ^ The functionalization of a polyketone containing a repeating unit of the formula (Π) can occur on all repeating units or only on some corresponding repeating units, that is, the non-integer meanings of & and 匕 (including the following) The functional groups & or & mentioned are not present in each repeating unit, but only in the corresponding part of the repeating unit. Very particularly preferably, the functionalized polyketone is a sulfonated polyketone (& Χ2 = sulfonate 201139506 acid or acid vinegar base), its preparation is for example by Schuster et al. (Macromo Lecules 2009, 42(8), pp. 3129-3 137). In a particularly preferred embodiment of the complex of the present invention, the functionalized polyketone comprises a repeating unit of formula (IIa) wherein aromatic仏 and A. In each case, it means benzene ring:

其中 a、b及R_2具有對於通式(π)所給出之含義,且 Μ表示金屬陽離子或η,較佳為Na、K、Li或Η,尤 其較佳為Η。 式(II)及(Ila)之重複單元中的一個或兩個苯環可視 情況經與SOsM基團不同之取代基單取代或多取代,曱基或 乙基尤其可能作為取代基存在(式(π)及(IIa)中未示)。 在本發明之複合物的另一極尤其較佳具體實例中,官 能化多酮包含通式(ΙΠ)重複單元,其中該重複單元包含 經由酮基及兩個醚基橋接之三個苯環,各笨環有可能帶有 磺酸基: 201139506Wherein a, b and R_2 have the meanings given for the formula (π), and Μ represents a metal cation or η, preferably Na, K, Li or ruthenium, particularly preferably ruthenium. One or two benzene rings in the repeating units of the formulae (II) and (Ila) may optionally be mono- or polysubstituted with a substituent different from the SOsM group, and a fluorenyl group or an ethyl group may especially exist as a substituent (formula ( Not shown in π) and (IIa). In another particularly preferred embodiment of the complex of the present invention, the functionalized polyketone comprises a repeating unit of the formula (ΙΠ), wherein the repeating unit comprises three benzene rings bridged via a keto group and two ether groups, Each stupid ring may have a sulfonic acid group: 201139506

其中 C具有與a及匕相同之含義且 a&b具有對於通式(II)所給出之含義, Μ表不金屬陽離子或H,較佳為η, 其較佳為Η。 在本發明之情形下,通式(111)之續化多酮亦稱為續 化聚鱗域酿)(s-PEEK )。 亦在本文t,式(111)重複單元中之一個或兩個或全 部三個苯環可視情況經與SAM基團不同之取代基單取代 或多取代,甲基或乙基尤其可能作為取代基存在(式(Η】) 中未示)。 在本發明之複合物的另一極尤其較佳具體實例中,官 能化多酮包含通式(IV)重複單元’丨中該重複單元包括 藉由酮基及二個驗基橋接之四個笨環’各苯環有可能帶有 磺酸基:Wherein C has the same meaning as a and oxime and a&b has the meaning given to the formula (II), and the oxime is not a metal cation or H, preferably η, which is preferably ruthenium. In the case of the present invention, the contiguous polyketone of the formula (111) is also referred to as a continuation polystyrene (s-PEEK). Also herein, one or two or all three benzene rings in the repeating unit of formula (111) may optionally be mono- or polysubstituted with a substituent different from the SAM group, and methyl or ethyl may especially be used as a substituent. Existence (not shown in (式)). In another particularly preferred embodiment of the composite of the present invention, the functionalized polyketone comprises a repeating unit of the formula (IV), wherein the repeating unit comprises four stupid bridges by a ketone group and two substituents. The ring 'each benzene ring may have a sulfonic acid group:

SOjM S〇3M b [SOjM S〇3M jd 12 (IV), 201139506 其中 ΠΙ )所給出之含 d具有與a、b及c相同之含義且 a、b、c及Μ具有對於通式(II)或 亦在本文中,式(no重複單元中之—個或兩個、三 個或全部四個苯環可視情況經與s〇3M基團不同之取代基 單取m取代’f基或乙基尤其可能作為取代基存在 (IV)中未示)。 在本發明之複。物的另—極尤其較佳具體實例中,官 能化多_包含通式⑺重複單元,其中該重複單元包含藉 由酮基及趟基橋接之兩個苯環,各苯環有可能帶有項酸基:SOjM S〇3M b [SOjM S〇3M jd 12 (IV), 201139506 where ΠΙ) gives d with the same meaning as a, b and c and a, b, c and Μ have the formula (II) Or also herein, in the formula (no one or two, three or all four benzene rings in the repeating unit may be substituted by a substituent different from the s〇3M group, and the 'f group or the The base is especially likely to be present as a substituent (not shown in (IV)). In the present invention. Further, in a particularly preferred embodiment, the functionalized plurality contains a repeating unit of the formula (7), wherein the repeating unit comprises two benzene rings bridged by a keto group and a fluorenyl group, each of which may have an item Acid base:

其中 及b具有對於通式(η)所給出之含義且 Μ表不金屬陽離子或η,較佳為^^、反、[丨或^, 其較佳為jj。 在本發明之情形下,通式(ν)之續 聚醚 _ (”ΕΚ)。 )重複單元中之一個或兩個笨環可視情況經與 13 201139506 S〇3M基團不同之取代基單取代或多取代,曱基或乙基尤其 可能作為取代基存在(式(V)中未示)。 在本發明之複合物的另一極尤其較佳具體實例中,官 能化多酮包含通式(VI)重複單元,其中該重複單元包括 三個苯環,其中一者可在間位或對位經對應於式(VI)中 所示基團之兩個相鄰羰基取代基橋接,各苯環有可能帶有 磺酸基:Wherein and b have the meaning given to the formula (η) and the oxime is not a metal cation or η, preferably ^^, 逆, [丨 or ^, which is preferably jj. In the case of the present invention, one or two of the repeating units of the polyether (v) of the formula (ν) may be optionally substituted by a substituent different from the 13 201139506 S〇3M group. Or polysubstituted, fluorenyl or ethyl is especially possible as a substituent (not shown in formula (V)). In another very particularly preferred embodiment of the complex of the invention, the functionalized polyketone comprises a formula ( VI) a repeating unit, wherein the repeating unit comprises three benzene rings, one of which may be bridged in the meta or para position via two adjacent carbonyl substituents corresponding to the group of formula (VI), each benzene ring It is possible to have a sulfonic acid group:

(VI), 給出之含義。 在本發明之情形下,通式(VI)之確化多嗣亦稱為績 化聚越酮酮(s-PEKK )。 亦在本文中,式(VI)重複單元中之一個或兩個 部三個苯環可視情況 ^ 3基團不同之取代基單取代 " 4 尤其可能作為取代基存在 中未示)。 ’(VI), giving the meaning. In the case of the present invention, the polyoxan of the formula (VI) is also referred to as the polyketene ketone (s-PEKK). Also herein, one or two of the three benzene rings in the repeating unit of the formula (VI) may be optionally substituted by a substituent of the group "3", especially if it is present as a substituent (not shown). ’

在本發明之情形下,官A ^ ^此化多酮亦應理解為意謂上述 官此化多酮之混合物或以縮合^ ^ 除以聚陽離子形式左+ 式存在之上述官能化多酮外,本發明 14 201139506 之複合物包含至少一種視情況經取代之導電高分子作為聚 陽離子。該等導電高分子為例如視情況經取代之聚笨胺、 視情況經取代之聚°比°各及視情況經取代之聚σ塞吩。 在本發明之複合物的一較佳具體實例中’導電高分子 為視情況經取代之聚嘆吩,其包含通式(VII )重複單元In the context of the present invention, a pharmaceutically acceptable polyketone is also understood to mean a mixture of the above-mentioned polyketides or a condensed compound which is present in the form of a polycation and a left-form of the above functionalized polyketone. The composite of the present invention 14 201139506 comprises at least one electrically conductive polymer which is optionally substituted as a polycation. The conductive polymer is, for example, a polystyrene which is optionally substituted, a polypyrole which is optionally substituted, and a poly(sigma) which is optionally substituted. In a preferred embodiment of the composite of the present invention, the conductive polymer is an optionally substituted polyseptene comprising a repeating unit of the formula (VII)

(VII) 其中 R4及R5彼此獨立地各表示Η、視情況經取代之c, -C, 8 烧基或視情況經取代之C! -C|8烷氧基,r4與R5 一起表示視(VII) wherein R4 and R5 each independently represent Η, optionally substituted c, -C, 8 alkyl or optionally substituted C! -C|8 alkoxy, r4 together with R5

情況經取代之C! -Cs伸烧基’其中一或多個c原子可經一或 多個選自〇或S之相同或不同雜原子置換,較佳為匕{8 Ο或SThe C?-Cs extended alkyl group may be substituted by one or more of the same or different heteroatoms selected from hydrazine or S, preferably 匕{8 Ο or S.

Ci-C8亞烧基,其中至少一個 之雜原子置換。A Ci-C8 alkylene group in which at least one of the hetero atoms is substituted.

基’或表示視情況經取代之 原子視情況經選自〇或SThe base or the atom that is optionally replaced is selected from 〇 or S.

(VII-a)及 / 尤其較f · 或(VII-b ) 15 201139506(VII-a) and / especially more than f · or (VII-b ) 15 201139506

其中 A表示視情況經取代之Ci_C5伸烷基’較佳為視情況經 取代之C2-C3伸烧基’ Y表示〇或S, R6表示直鏈或分支鏈、視情況經取代之Ci-Cis烷基, 較佳為直鏈或分支鏈、視情況經取代之C1 -C i4烷基;視情 況經取代之Cs-C,2環烷基;視情況經取代之c6-c14芳基; 視情況經取代之C7-C1S芳烷基;視情況經取代之c7_Ci8烷 芳基;視情況經取代之c,-c4羥基烷基;或羥基,且 y表示0至8、較佳0'1或2、尤其較佳〇或1之整數, 且 其中在若干個基團R_6鍵結於A之情況下,此等基團可 為相同或不同的。 通式(VII-a )應理解為意謂取代基&可鍵結於伸烷基 a y :欠。 在本發明之複合物的其他極尤其較佳具體實例中,包 含通式(νπ)重複單元之㈣吩為包含通式(vn_aa)及/ 或通式(Vn-ab)之重複單元的彼等聚噻吩 16 201139506Wherein A represents an optionally substituted Ci_C5 alkylene group, preferably a C2-C3 alkylene group which is optionally substituted, represents Y or S, and R6 represents a straight or branched chain, optionally substituted Ci-Cis An alkyl group, preferably a straight or branched chain, optionally substituted C1-C i4 alkyl; optionally substituted Cs-C, 2 cycloalkyl; optionally substituted c6-c14 aryl; a substituted C7-C1S aralkyl group; optionally substituted c7_Ci8 alkaryl; optionally substituted c, -c4 hydroxyalkyl; or hydroxy, and y represents 0 to 8, preferably 0'1 or 2, particularly preferably 〇 or an integer of 1, and wherein in the case where several groups R_6 are bonded to A, such groups may be the same or different. The formula (VII-a) is understood to mean that the substituent & can be bonded to an alkylene group a y : owed. In other very particularly preferred embodiments of the complex of the present invention, the (iv) phene comprising a repeating unit of the formula (νπ) is such that they comprise repeating units of the formula (vn_aa) and/or (Vn-ab) Polythiophene 16 201139506

其中厌6及丫具有上述含義。 在本發明之複合物的又一極其較佳具體實例中,包含 通式(VII)重複單元之聚噻吩為包含通式(νπ-aaa)及/ 或通式(νπ-aba)之重複單元的彼等聚噻吩 >«w • - r^\ r^\ 糾 -本 (VII-aaa) ( VII-aba) 在本發明之情形下,字首「聚(p〇ly_ )」應理解為意謂 =噻吩包含一個以上相同或不同重複單元。聚噻吩包含總 f η個通式(VII)重複單元,其中n可為2至2,〇〇〇、較2 、100之整數。在各種情況下,一個聚噻吩中之通式(VH) 重複單元可為相同或不同的。在各種情況下包含相同通式 (Vn)重複單元之聚噻吩為較佳。 ^ 聚噻吩較佳在各端基上帶有Η。 在尤其較佳具體實例中,具有通式(νπ)重複單元之 17 201139506 聚噻吩為聚(3,4-伸乙基二氧基噻吩)、聚(3,4_伸乙基氧基硫 雜嗟吩)或聚(噻吩并[3,4-b]噻吩),亦即式(VII-aaa)、 (Vll-aba)或(VII-b)之重複單元的均聚噻吩’其中γ = s。 在本發明之複合物的其他尤其較佳具體實例中,具有 通式(VII)重複單元之聚噻吩為式(VII_aaa)及(VII aba)、 (VII-aaa)及(VII-b)、( VII_aba)及(VII b)或(Vli aaa)、 (vil-aba)及(VII-b)之重複單元的共聚物,式(vn_aaa) 及(Vll-aba)以及(VII-aaa)及(vn_b)之重複單元的共 聚物為較佳。 在本發明之情形下,c 1-C5伸烷基A較佳為亞甲基、伸 乙基 '正伸丙基、正伸丁基或正伸戊基,且〇1-(:8伸烷基另 外為正伸己基、正伸庚基及正伸辛基。在本發明之情形下, K8亞烷基較佳為包含至少一個雙鍵之上述Ci_c8伸烷 基。在本發明之情形下’ Cl_C8二氧基伸烷基、C|_C8氧基 硫雜伸烷基及CrC8二硫雜伸烷基較佳表示Ci_c8:氧基伸 院基,C|_c8a基硫雜伸絲及Ci_C8二硫雜伸職對應於 上述(^(:8伸烷基。Cl_Cl8烷基、C|_Cu烷基及c5_Ci2環烷 基表示關於式⑴中之基團Arl、^及R1的取代基所提 及之烷基及Cs-C,2環烷基之相應選擇。在本發明之 情形下’ C,-Cl8烷氧基表示對應於上述Ci-Ci8烷基之烷氧 基,且CVC,4芳基具有關於式(1)中之基團A。、及 I的取代基所給出之含義。此外,在本發明之情形下,c7_Ci8 芳院基較佳表示如下c7-c,8芳院基,例如苯甲基或烧基苯 甲基,諸如鄰甲基苯甲基、間甲基苯甲基、對甲基苯甲基, 18 201139506 C7-Cu芳烷基表示鄰曱笨基、間甲苯基、對曱笨基、23 一 曱苯基、2,4-二甲笨基、2,5_二甲苯基、2,6.二甲苯基、’3二 二甲苯基、3,5_二曱苯基或2,4,6_三甲苯基,且在本發明’ 情形下,C「C4經基院基較佳理解為意謂包含㈣作為 基之c,-c4燒基’且其中該Ci_C4烧基可表示例如甲基、乙 基、正丙基或異丙基、正丁基、異丁基、第二丁基或第三 丁基。先前清單用來舉例說明本發明且不視為確定性的。一 視情況經取代之聚噻吩為陽離子性的,「陽離子性僅 關於聚嗟吩主鏈上之電荷。聚嗟吩在結構單元中可㈣正 電荷及負電荷,視基團上之取代基而定正電荷位 於聚。塞吩主鏈上且負電荷視情況位於經確酸醋基或叛酸醋 基取代之基團R上。在此情形下十g吩主鏈之正電荷可 部分或完全由視情況存在於基圏卩上之陰離子基團滿足。 總體而言,在此等情況下,聚噻吩可為陽離子性、中性或 甚至陰離子性的。然而,在本發明之情形下,其全部視為 陽離子性聚。塞吩’因…吩主鏈上之正電荷為決定性 的。各式中未顯示正電荷’因為其經内消旋非定域化。然 而’正電荷數目為至少1且至多η,其中4聚噻吩中之所 有重複單元(相同或不同)的總數。 為補積正電荷,右此尚未由視情況經續酸醋或叛酸醋 取代且因此帶負電之基團RdR5實現,則陽離子性聚嗔吩 ^陰離子作為相對離子’在本發明之情形下此角色至少 部分由官能化多酮承擔。 根據本發明之複合物的一相當特定具體實例,具有通 201139506 式(νπ)重複單元之聚噻吩為聚(3,4_伸乙基二氧基噻吩)、 聚(3,4-伸乙基氧基硫雜噻吩)或聚(噻吩并[34_b]噻吩),極 尤其較佳為聚(3,4 -伸乙基二氧基嘆吩),且多酮為具有式 (II)重複單元之磺化多酮,極尤其較佳為具有式(ΠΙ)重 複單元之磺化聚醚醚酮、具有式(IV)重複單元之磺化多 酮、具有式(v)重複單元之續化聚醚酮或具有式(VI)重 複單元之績化聚輕_酮。 根據本發明,更佳為上述本發明之複合物溶解或分散 於一或多種溶劑或分散劑中,因此以溶液或分散液形式存 在。 分散液或溶液中導電高分子(尤其為包含通式 (VII) 重複單元之視情況經取代之聚噻吩)之固體含量較佳介於 0.05重量百分比(重量%)與20 〇重量百分比(重量%)之 間,尤其較佳介於(Μ重量%與5 G重量%之間且最佳介於 0.3重量%與4.0重量%之間’在各種情況下均以溶液或分散 液之總重量計。 可提及之溶劑及分散劑為例如以下液體:脂族醇,諸 士甲醇6醇、異丙醇及丁醇;脂族嗣,諸如丙嗣及甲基 >乙基酮;脂族羧酸醋,諸如乙酸乙醋及乙酸丁醋;芳族煙, 諸士甲苯及一曱苯,脂族烴,諸如己烷庚烷及環己烷; 氣烴’諸如二氣甲烧、氣仿及1,2_二氣乙烧;脂族腈,諸如 乙腈;脂族亞颯及石風,諸如二甲亞砜及環丁砜;脂族羧酸 醯胺,諸如甲基乙醯胺、二甲基乙醯胺、〕甲基甲酿胺或 N-甲基蜂定_ ;及脂㈣及芳脂族醚,諸如乙驗及苯甲 20 201139506 醚。此外, 或分散劑。 水或水與上述有機溶劑之混合物亦可用作溶劑 較佳溶劑或分散劑為水或其他質子性溶劑,諸如醇 例如甲醇、乙醇、異丙醇及丁醇,及水與此等醇之混合物 水尤其較佳作為溶劑或分散劑。 溶液或分散液中本發明之複合物(亦即導電高分子(尤 其=包含通式(VII)重複單元之視情況經取代之聚嗟吩) 與官能化多酮之複合物)的總含量例如介於GQ5重量%與 10重量%之間,較佳介於重量%與5重量%之間在各 種情況下均以溶液或分散液之總重量計。 溶液或分散液可包含導電高分尤其為包含通式 (VII)重複單元之視情況經取代之聚噻吩)與官能化多酮, 其重量比在1:0.3至1:100之範圍内,較佳在1:1至1:4〇之 範圍内 尤其較佳在1:2至1:20之範圍内且極其較佺在1:2 至1:15之範圍内。此處,假定在聚合期間進行完全轉化, 則導電高分子之重量大致相當於所用單體之重量。 上述溶液或分散液之製備藉由以下進行:首先在相對 離子存在下,較佳在上述官能化多酮存在下,例如類似於 EP 0 440 957 A2中所提及之條件,由用於製備導電高分子 溶液或導電高分子分散液之相應前驅物製備。製備此溶液 或分散液之改良變化形式為使用離子交換劑移除無機鹽内 含物或其一部分。該變化形式例如描述於DE i96 27 〇7i ai 中。舉例而言’該離子交換劑可與產物一起攪拌,或將產 物輸送至填充有離子交換劑之管柱上。舉例而言,低金屬 21 201139506 内含物可藉由使用離子交換劑達成。 分散液中之粒徑可在除鹽作用後減小,⑽ 壓均質機。此操作亦可重複以增加效果。介於1〇〇,巴與 巴之間的高壓已被尤其證明在本文中尤其有利於大大減小 粒徑。或者,粒徑亦可藉由超音波處理來減小。 製備用於製備包含通式(VII)重複單元之聚嗔吩及其 衍生物的單體前驅物的方法為熟習此項技術者所已知且例 L. Groenendaal, F. Jonas, D. Freitag, H. Pielartzik 及 J· R· Reynolds,Adv. Mater. 12 (2000) 481·494 及其中所 引用之文獻中。亦可使用各種前驅物之混合物。 在本發明之情形下,上述°塞吩之衍生物應理解為意謂 :如此等噻吩之二聚物或三聚物。單體前驅物之較高分子 量二生物(亦即四聚物、五聚物等)亦可能作為衍生物。 該等衍生物可由相同或不同單體單元建構且可以純形式及 以彼此混合物形式及/或與上述。塞吩之混合物形式使用。在 本發明之情形下,&等嗟吩及嗟吩衍生物之氧化或還原形 式亦包括於術t丑「η「+ °° 塞力」及噻吩衍生物」中,只要在其 聚。中形成相同導電高分子即可,比如在上述噻吩及噻吩 衍生物之情況下。 、;製備包含通式(νπ )重複單元之視情況經取代之 聚:的尤其適合單體前驅物為視情況經取代之3,4-伸烧 基氧基塞吩,其可例如由通式(VIII )表示 22 201139506Among them, 6 and 丫 have the above meanings. In still another highly preferred embodiment of the complex of the present invention, the polythiophene comprising a repeating unit of the formula (VII) is a repeating unit comprising the formula (νπ-aaa) and/or the formula (νπ-aba) These polythiophenes>«w • - r^\ r^\ --本 (VII-aaa) (VII-aba) In the case of the present invention, the prefix "poly(p〇ly_)" should be understood as meaning The thiophene contains more than one identical or different repeating unit. The polythiophene comprises a total of f η repeating units of the formula (VII), wherein n can be 2 to 2, 〇〇〇, an integer of 2, 100. In each case, the repeating units of the formula (VH) in one polythiophene may be the same or different. Polythiophenes containing repeating units of the same general formula (Vn) in each case are preferred. ^ Polythiophene preferably has a ruthenium on each end group. In a particularly preferred embodiment, 17 201139506 polythiophene having the general formula (νπ) repeating unit is poly(3,4-extended ethyldioxythiophene), poly(3,4-ethylhexyloxythio)嗟 )) or poly(thieno[3,4-b]thiophene), that is, a homopolythiophene of a repeating unit of the formula (VII-aaa), (Vll-aba) or (VII-b) wherein γ = s . In other particularly preferred embodiments of the complex of the present invention, the polythiophene having a repeating unit of the formula (VII) is a formula (VII_aaa) and (VII aba), (VII-aaa) and (VII-b), Copolymers of VII_aba) and (VII b) or (Vli aaa), (vil-aba) and (VII-b) repeating units, formula (vn_aaa) and (Vll-aba) and (VII-aaa) and (vn_b) The copolymer of the repeating unit is preferred. In the context of the present invention, c1-C5 alkylene A is preferably methylene, ethylidene propyl, n-butyl or n-pentyl, and 〇1-(:8 alkyl is additionally In the case of the present invention, the K8 alkylene group is preferably the above-mentioned Ci_c8 alkylene group containing at least one double bond. In the case of the present invention, 'Cl_C8 dioxyalkylene alkyl group , C|_C8 oxythiazole alkyl and CrC8 dithioheteroalkyl preferably denotes Ci_c8: oxy-extension base, C|_c8a-based thiazepine and Ci_C8 dithia-extension correspond to the above (^( : 8 alkylene. Cl_Cl8 alkyl, C|_Cu alkyl and c5_Ci2 cycloalkyl represent alkyl and Cs-C, 2 naphthenic as mentioned for the substituents of the groups Arl, ^ and R1 in the formula (1) Correspondingly, in the case of the present invention, 'C,-Cl8 alkoxy represents an alkoxy group corresponding to the above Ci-Ci8 alkyl group, and CVC, 4 aryl group has a group A in formula (1) Further, in the case of the present invention, the c7_Ci8 aryl group preferably represents the following c7-c, 8 aryl group, such as benzyl or alkyl benzyl, O-methyl Methyl, m-methylbenzyl, p-methylbenzyl, 18 201139506 C7-Cu aralkyl represents o-nonyl, m-tolyl, p-phenyl, 23-phenyl, 2,4- Dimethyl, 2,5-dimethylphenyl, 2,6. xylyl, '3 didimethylphenyl, 3,5-diphenylphenyl or 2,4,6-trimethylphenyl, and In the case of the invention, C "C4 is preferably understood to include (4) as a base c, -c4 alkyl group and wherein the Ci_C4 alkyl group may represent, for example, methyl, ethyl, n-propyl or iso- a propyl, n-butyl, isobutyl, t-butyl or t-butyl group. The foregoing list is intended to illustrate the invention and is not considered to be deterministic. The polythiophene which is optionally substituted is cationic. "Cationality is only related to the charge on the polybenzazole backbone. Polythiophenes can have (four) positive and negative charges in the structural unit, and positive charges on the substituents on the group are located on the polystyrene backbone. The charge is optionally located on a group R substituted with a succinic acid or a phenolic acid group. In this case, the positive charge of the ten gram main chain may be partially or completely an anion present on the substrate as appropriate. In general, in these cases, the polythiophene may be cationic, neutral or even anionic. However, in the case of the present invention, all of them are regarded as cationic poly. The positive charge on the main chain of the phenotype is decisive. The positive charge is not shown in the formula 'because it is meso-delocalized. However, the number of positive charges is at least 1 and at most η, where all repeats in the 4 polythiophene The total number of units (identical or different). To replenish the positive charge, the right is not yet achieved by the acid or phenolic acid vinegar, and thus the negatively charged group RdR5, the cationic polyporphin anion is used as the relative The ion 'in this context is at least partially assumed by the functionalized polyketone. According to a rather specific embodiment of the complex of the present invention, the polythiophene having the repeating unit of the formula (20113506) is poly(3,4-ethylhexyloxythiophene), poly(3,4-ethylidene) Oxythiothiathiophene) or poly(thieno[34_b]thiophene), very particularly preferably poly(3,4-extended ethyldioxysinter), and the polyketone is a repeating unit of formula (II) Sulfonated polyketone, very particularly preferably a sulfonated polyetheretherketone having a repeating unit of the formula (ΠΙ), a sulfonated polyketone having a repeating unit of the formula (IV), a polyether having a repeating unit of the formula (v) A ketone or a poly-light ketone having a repeating unit of formula (VI). According to the present invention, it is more preferred that the above-described composite of the present invention is dissolved or dispersed in one or more solvents or dispersants, and thus exists in the form of a solution or dispersion. The solid content of the conductive polymer in the dispersion or solution (especially the optionally substituted polythiophene comprising the repeating unit of the formula (VII)) is preferably 0.05% by weight (% by weight) and 20% by weight (% by weight) In particular, it is preferably between (Μ% by weight and 5% by weight and optimally between 0.3% by weight and 4.0% by weight' in each case based on the total weight of the solution or dispersion. The solvent and dispersing agent are, for example, the following liquids: aliphatic alcohols, various methanols, alcohols, isopropanols and butanols; aliphatic hydrazines such as propylene and methyl groups; ethyl ketones; Such as ethyl acetate and butyl acetate; aromatic smoke, toluene and mono-benzene, aliphatic hydrocarbons such as hexane heptane and cyclohexane; gas hydrocarbons such as two gas, gas and 1,2 _ 2 gas e-sinter; aliphatic nitrile, such as acetonitrile; aliphatic hydrazine and stone wind, such as dimethyl sulfoxide and sulfolane; aliphatic carboxylic acid guanamine, such as methyl acetamide, dimethyl acetamide, 〕 methyl ketoamine or N-methyl beeidine _; and lipid (four) and araliphatic ethers, such as the test and benzene 20 201139506 In addition, or a dispersing agent. Water or a mixture of water and the above organic solvent may also be used as a solvent. A preferred solvent or dispersing agent is water or other protic solvent such as an alcohol such as methanol, ethanol, isopropanol and butanol, and A mixture of water and such an alcohol is particularly preferred as a solvent or dispersant. The complex of the invention (i.e., a conductive polymer (especially comprising a repeating unit of the formula (VII) is optionally substituted in the solution or dispersion) The total content of the polybenz and the functionalized polyketone) is, for example, between 5% by weight and 10% by weight of GQ, preferably between 5% by weight and 5% by weight, in each case in solution or dispersion. The solution or dispersion may comprise a conductive high score, especially an optionally substituted polythiophene comprising a repeating unit of the formula (VII), and a functionalized polyketone in a weight ratio of 1:0.3 to 1:100. Within the range of 1:1 to 1:4 Torr, it is particularly preferably in the range of 1:2 to 1:20 and extremely in the range of 1:2 to 1:15. Here, assuming that the complete conversion is carried out during the polymerization, the weight of the conductive polymer is roughly equivalent to the weight of the monomer used. The preparation of the above solution or dispersion is carried out by first preparing the conductive in the presence of a counter ion, preferably in the presence of the above-mentioned functionalized polyketone, for example, similar to the conditions mentioned in EP 0 440 957 A2. Preparation of a corresponding solution of a polymer solution or a conductive polymer dispersion. An improved variation of the preparation of this solution or dispersion is the use of an ion exchanger to remove the inorganic salt content or a portion thereof. This variant is described, for example, in DE i96 27 〇7i ai. For example, the ion exchanger can be agitated with the product or delivered to a column packed with an ion exchanger. For example, the low metal 21 201139506 inclusion can be achieved by using an ion exchanger. The particle size in the dispersion can be reduced after demineralization, (10) Pressure homogenizer. This operation can also be repeated to increase the effect. The high pressure between 1 and bar has been especially proven to be particularly advantageous in this paper to greatly reduce the particle size. Alternatively, the particle size can also be reduced by ultrasonic processing. Processes for preparing monomeric precursors for the preparation of polybenzazoles and derivatives thereof comprising repeating units of the general formula (VII) are known to those skilled in the art and are examples of L. Groenendaal, F. Jonas, D. Freitag, H. Pielartzik and J. R. Reynolds, Adv. Mater. 12 (2000) 481·494 and the literature cited therein. Mixtures of various precursors can also be used. In the context of the present invention, the above derivatives of ° phenophene are understood to mean: dimers or trimers of such thiophenes. The higher molecular weight of the monomer precursor, the two organisms (i.e., tetramers, pentamers, etc.) may also be used as derivatives. The derivatives may be constructed from the same or different monomer units and may be in pure form and in admixture with one another and/or with the above. Used in the form of a mixture of phenotypes. In the case of the present invention, the oxidized or reduced form of the & isoprene and porphin derivatives is also included in the "η" + ° ° plug" and thiophene derivatives, as long as they are concentrated. The same conductive polymer may be formed in the middle, for example, in the case of the above thiophene and thiophene derivatives. Preparing a monomeric precursor comprising a repeating unit of the formula (νπ), particularly suitable for use as a monomeric precursor, optionally substituted 3,4-extended alkyloxythiophene, which may, for example, be of the formula (VIII) indicates 22 201139506

(VIII) 其中A、R0&y具有關於式(VII_a)所給出之含義 其中在若干個基團R鍵結於A之情況下此, 同或不同。 為相 極尤其較佳單體前驅物為視情況經取代之3,4_伸乙基 一乳基噻吩’且在—較佳具體實例中為未經取代之 基二氧基噻吩。 ’ ^ 除導電高分子與官能化多_之複合物外,溶液或分散 ^可包含其他高分子,例如聚苯乙稀續酸、II化或全氟化 ~西文、聚乙稀醇、$乙烯n㈣㈣、聚氣乙稀、聚乙酸乙 烯S日、聚丁酸乙烯酯、%丙烯酸酯、聚丙烯酸醯胺、聚甲 烯酸醋、聚甲基丙烯酸醯胺、聚丙烯腈、苯乙烯/丙烯 馱s曰乙酸乙烯酯/丙烯酸酯及乙烯/乙酸乙烯酯共聚物、聚 :、聚酯、聚胺基曱酸酯、聚醯胺、聚醯亞胺、非官能化 夕酮、聚石風、二聚氰胺甲路樹脂、環氧樹脂、聚石夕氧樹脂 或纖維素。 溶液或分散液可另外包含其他組分,諸如表面活性物 質例如離子性及非離子性界面活性劑;或黏著促進劑, 例如有機官能錢或其水解物,例如3_縮水甘油氧基丙基 三烷氧基矽烷、3-胺基丙基三乙氧基矽烷、3·巯基丙基三甲 23 201139506 氧基石夕烧、3 -曱基丙稀醢氧基丙基三甲氧基石夕院、乙烯基二 甲氧基矽烷或辛基三乙氧基矽烷。 在本發明之情形下,此外,溶液或分散液之pH值可在 1至8之範圍内,較佳在2至7之範圍内,尤其較佳在4至 7之範圍内。可將鹼添加至中分散液以調整相應pH值,例 如胺、氫氧化銨或金屬氫氧化物,較佳為氨或鹼金屬氫氧 化物。在本文中,在25〇C下藉助於pH電極(KnickLab〇rpH 值計766 )測定pH值。 因此’本發明亦關於一種由導電高分子、較佳由包含 通式(VII )重複單元之導電聚噻吩及官能化、較佳橫化多 綱、尤其較佳具有結構(III )、( IV )、( V )或(VI )之重複 單元的磺化多酮製備複合物的方法,其中在磺化多酮存在 下聚合用於製備導電高分子、較佳視情況經取代之3,4_伸乙 基一氧基噻吩、極尤其較佳3,4-伸乙基二氧基噻吩之前驅 物。 本發明之複合物驚人地適合於製造〇LED或有機太陽 電池(OSC )中之電洞注入層或電洞傳輸層,或適合於製造 透明導電塗料。 因此,本發明亦提供本發明之複合物的用途,其用於 製造透明導電塗料或用於製造有機發光二極體(〇LED )或 有機太陽電池(OSC )中之電洞注入層或電洞傳輸層。 對於製造透明導電塗料,例如藉由已知方法,例如藉 由旋塗、浸潰、傾倒、滴上、喷灑、喷細霧、刀塗、刷塗 或印刷,例如藉由喷墨、網版、凹版、平版或移動印刷, 24 201139506 將上述溶液或分散液以0 5 μιη至250 μιη之濕膜厚度、較佳 以2 μιη至50 μηι之濕膜厚度塗覆於適合基板,接著在至少 20°C至200°C之溫度下乾燥。 夕 有機發光二極體(OLED )在諸如顯示器及平面天線之 用途中的重要性日益增加。〇LED之建構及功能為熟習此項 技術者所已知且屢次例如描述於D. Hertel及K,Meerhdz Chemie in unserer Zeit,39 (2〇〇5),第 336 347 頁中。本發 明之複合物可在此等用途中用作中間層。 因此,舉例而言,可想像以下建構:將透明導電電極 (例如由氧化銦錫(IT〇 )、摻雜鋅或氧化錫製成)或導電 高分子(例如包含結構(VII)重複單元之導電高分子)塗 覆於玻璃、聚(對苯二曱酸伸乙酯)(pET )或其他透明塑膠 之透明基板。本發明之複合物作為薄層沈積於其上。接著 一或多個有機功能層塗覆於其上。此等物質可為共軛高分 子,諸如聚伸苯基伸乙烯基或聚第;或氣相沈積分子層, 諸如為熟習此項技術者所已知且諸如例如由D. Hertel及K.(VIII) wherein A, R0, and y have the meanings given by formula (VII-a) wherein, in the case where several groups R are bonded to A, the same or different. It is especially preferred that the monomer precursor is an optionally substituted 3,4-extended ethyl-lactylthiophene' and, in a preferred embodiment, an unsubstituted bis-dioxythiophene. ' ^ In addition to the complex of conductive polymer and functionalized, the solution or dispersion can contain other polymers, such as polystyrene, II or perfluorinated ~ Western, polyethylene, $ Ethylene n (four) (four), polyethylene gas, polyvinyl acetate S, polybutyl butyrate, % acrylate, polyacrylamide, polymethacrylate, polymethyl methacrylate, polyacrylonitrile, styrene / propylene驮s曰 vinyl acetate/acrylate and ethylene/vinyl acetate copolymer, poly:, polyester, polyamino phthalate, polydecylamine, polyimide, non-functional ketene, polylith, Melamine road resin, epoxy resin, polyoxin or cellulose. The solution or dispersion may additionally comprise other components, such as surface active substances such as ionic and nonionic surfactants; or adhesion promoters, such as organic functional money or hydrolysates thereof, such as 3-glycidoxypropyl three Alkoxydecane, 3-aminopropyltriethoxydecane, 3·mercaptopropyltrimethyl 23 201139506 Oxygen oxysphate, 3-mercaptopropyloxypropyltrimethoxy sylvestre, vinyl II Methoxydecane or octyltriethoxydecane. In the case of the present invention, in addition, the pH of the solution or dispersion may be in the range of 1 to 8, preferably in the range of 2 to 7, particularly preferably in the range of 4 to 7. A base may be added to the intermediate dispersion to adjust the corresponding pH, such as an amine, ammonium hydroxide or metal hydroxide, preferably ammonia or an alkali metal hydroxide. Herein, the pH is measured by means of a pH electrode (KnickLab〇r pH meter 766) at 25 °C. Therefore, the present invention also relates to a conductive polysiloxane, preferably a conductive polythiophene comprising a repeating unit of the formula (VII), and a functionalized, preferably transversely multi-dimensional, particularly preferably having a structure (III), (IV). a method for preparing a complex of a sulfonated polyketone of a repeating unit of (V) or (VI), wherein the polymerization is carried out in the presence of a sulfonated polyketone for preparing a conductive polymer, preferably 3, 4_ Ethyloxy thiophene, very particularly preferably a 3,4-extended ethyldioxythiophene precursor. The composite of the present invention is surprisingly suitable for the fabrication of hole injection layers or hole transport layers in tantalum LED or organic solar cells (OSC), or for the manufacture of transparent conductive coatings. Accordingly, the present invention also provides the use of the composite of the present invention for the manufacture of transparent conductive coatings or for the fabrication of hole injection layers or holes in organic light-emitting diodes (ITO) or organic solar cells (OSC). Transport layer. For the production of transparent conductive coatings, for example by known methods, such as by spin coating, dipping, pouring, dripping, spraying, spraying mist, knife coating, brushing or printing, for example by inkjet, screen printing , gravure, lithographic or mobile printing, 24 201139506 The above solution or dispersion is applied to a suitable substrate at a wet film thickness of from 0 5 μm to 250 μm, preferably from 2 μm to 50 μm, followed by at least 20 Dry at temperatures from °C to 200 °C. The importance of organic light-emitting diodes (OLEDs) in applications such as displays and planar antennas is increasing. The construction and function of 〇LEDs are known to those skilled in the art and are described, for example, in D. Hertel and K, Meerhdz Chemie in unserer Zeit, 39 (2〇〇5), p. 336 347. The composite of the present invention can be used as an intermediate layer in such applications. Thus, for example, it is conceivable to construct a transparent conductive electrode (for example made of indium tin oxide (IT〇), doped zinc or tin oxide) or a conductive polymer (for example a conductive comprising a repeating unit of structure (VII) The polymer is coated on a transparent substrate of glass, poly(p-benzoic acid ethyl ester) (pET) or other transparent plastic. The composite of the present invention is deposited as a thin layer thereon. One or more organic functional layers are then applied thereto. Such materials may be conjugated polymers, such as polyphenylene vinyl or poly; or vapor deposited molecular layers, such as are known to those skilled in the art and such as, for example, by D. Hertel and K.

Meerholz,Chemie in unserer Zeit,39 (2005),第 336-347 頁 所述。以沈積最終金屬電極(例如金屬鋇或LiF//Al )結束 OLED。在施加2_2〇v直流電壓後,電流流過配置且在至 少一個功能層中產生電致發光。 OLED中之聚合中間層的優點為: 1) 由溶液簡單沈積聚合中間層而無需耗時且昂貴的真 空法。 2) 聚合中間層高度透明且允許有效進行光去耦。 25 201139506 3) 聚合中間層使下方的層平滑。此 思明凡成之經加工 OLED中的短路更少,因此組件製造之產率更高。 4) 由於電荷載流子自透明電極注人後續有機層中得到 改良’故OLED之電學性質得到改良。 本發明之複合物亦可類似地用於製造有機太陽電池 (OSC)且產生類似優點。纟osc中,藉由在電極處吸收 光來產生電塵。建構為熟習此項技術者所已知且屢次例如 •ί田述於 S· Sensfuss 等人,Kunststoffe 8 (2007),第 136 頁中。 此外,本發明係關於官能化 '較佳磺化多酮、尤其較 佳具有結構(m)、(IV)、(v)或(VI)之重複單元的項化 多酮之用途,其作為聚陰離子與作為聚陽離子之導電高分 子、較佳與具有結構(VII)重複單元之導電高分子形成複 合物。 此外本發明係關於一種經塗佈基板,在其上塗覆包 含本發明之複合物的較佳透明導電塗料。可能基板尤其為 膜,尤其較佳為高分子膜,極尤其較佳為熱塑性高分子之 高分子膜或玻璃板》 此外’本發明係關於一種製造經塗佈基板的方法,其 包含以下加工步驟: i)提供基板; η)用包含本發明之複合物的組成物塗佈該基板。 在本發明之製造經塗佈基板的方法之加工步驟i )中, 首先提供基板,該基板較佳為上述基板之一。 在加工步驟ii )中,接著用包含本發明之複合物的組成 26 201139506 物塗佈此基板。就此而論,尤1 尤,、較佳將包含一或多種溶劑 或分散劑及本發明之複合物的、交 初的a液或分散液塗覆於基板或 基板之某些區域’接著蒸發至少— ^ 些溶劑或分散劑,此蒸 發有可能例如藉由簡單風乾岑浦 卞、祀a視情況在烘箱中乾燥來進 行。 此外’本發明係關於—種可藉由此方法獲得之經塗佈 基板。 本發明亦關於-種電子組件,其包含本發明之經塗佈 基板或可藉由本發明之製造經塗佈基板的方法獲得之經塗 佈基板’此電子組件較佳為有機發光二極體或有機太陽電 池。在有機發光二極體中’㈣於基板之塗料可尤其充當 電洞注入層或電洞傳輸層 '然而,亦可想像本發明之複合 物在其他電子組件(例如電容器)令之用途。 以下實施例僅用以舉例說明本發明且不應解釋為構成 限制。 實施例 fA^J__LA_±gD〇T 及 s-ΡΕΕΚ 贺借公勘 φ 將 25.〇 g 聚醚醚酮 Victrex® PEEK·™ 150 PF (供應商: VlCtreX EUr〇pa 有限公司,Hofheim/Ts.)計量至 250.0 g 95% 濃度之硫酸中。在1〇〇t下在強烈搜拌下加熱混合物5小 夺&後,使反應混合物冷卻至0°C且在此溫度下在650 mi 水與325 ml正丁醇之混合物中攪拌,同時冷卻。丟棄水相。 m 1水洗務丁醇相兩次且丟棄洗務水。隨後,將15 0 m 1 水添加至丁醇相中且用12 ml 30%濃度之NaOH將混合物中 27 201139506 和至約6之pH值。接著在旋轉蔘發3! μ 石、赞器上蒸餾出丁醇且逐步 用水替換,最後體積濃縮至約1/3。蔣, 析300 ml甲醇添加至此 水溶液中且濾出已沈殿出之硫酸鈉。用M> 奶用離子交換劑(Lewatit MP® 62 及 Lewatit® Monoplus S 1〇〇,徂施 * . τ 仏應两· Lanxess AG) 處理濾液3次以移除硫酸根及鈉離子,接著蒸發至乾並在 0.5毫巴下後乾燥殘餘物《產量為23 6 gs_pEEK。高分子之 每一重複單元的磺化度為1.09(藉由用〇.lN氫氧化鈉溶液 滴定來測定),其相當於286 g/mol之當量。 1.5 1玻璃容器配備有攪拌器及溫度計。在25。〇下在玻 璃容器中將1,338 g水、10 g績化聚喊趟酮' 2.36g i〇〇/0濃 度之硫酸鐵(III)水溶液及1.91 g伸乙基二氧基噻吩EDT (Clevios® M V2, H. C. Starck Clevios 有限公司,Germany) 充分撥拌1 5分鐘《隨後,添加4.66 g過二硫酸鈉,且在25 下攪拌混合物24小時《接著添加57 g陰離子交換劑 (Lewatit® MP 62, Lanxess AG,Leverkusen, Germany)及 111 g 陽離子交換劑(Lewatit® S 100 H,Lanxess AG,Leverkusen, Germany )。攪拌混合物2小時。接著經濾紙分離出離子交 換劑且使分散液通過0.2 μπι過濾器。 固體含量: 0.61% 黏度: 2 mPas(Haake RV 1,20°C,700 s·1) 例2 :劁i告某於禎合物PEDOT/s-PEEK之層 在旋轉蒸發器上將來自實施例1之分散液濃縮至1.36% 之固體含量。 將經清潔之玻璃基板置於旋轉塗漆機(lacquer whirler 28 201139506 coater)上且將5 ml經濃縮之分散液分佈於基板上。接著藉 由在500轉/分鐘下旋轉板30秒來分離出過量分散液。隨 後,在200°C下在熱板上乾燥以此方式塗佈之基板3分鐘。 層厚度為 65 nm ( Tencor,Alphastep 500 )。 藉由經由遮蔽罩以0.5 mm距離氣相沈積2.5 cm長度之 Ag電極來測定導電性。將用靜電計測定之表面電阻乘以層 厚度以獲得比電阻。層之比電阻為1,760 0hm.cm。該層為 透明的。 营施例3 :在高溫下儲存 將來自實施例1之50 g分散液在50〇c下儲存1 6天。儲 存後之硫酸根含量為7 ppm。因此,在量測準確性方面,硫 酸根濃度保持不變。所產生之複合物在曝露於50°c之溫度 下未分離出硫酸根。 比較實施例1 :在高溫下儲存習知分勒涪 將具有以下性質之PEDOT:PSS分散液(cievi〇s® p vp AI 4083,H_C. Starck Clevios有限公司)用於參考實驗: 固體含量 1.6% 硫酸根含量 5 ppm pH 值 1·5 同樣將50g此材料在50°C下儲存l6天。儲存後之硫酸 根含量為22 ppm且因此顯著增加。 實施例3顯示與已知PEDOT:PSS複合物相比,來自實 施例1之本發明之分散液在尚溫下未分離出硫酸根。Meerholz, Chemie in unserer Zeit, 39 (2005), pp. 336-347. The OLED is terminated by depositing a final metal electrode, such as a metal ruthenium or LiF//Al. After applying a 2 〇 直流 dc voltage, current flows through the configuration and produces electroluminescence in at least one of the functional layers. The advantages of the polymeric interlayer in OLEDs are: 1) Simple deposition of a polymeric intermediate layer from a solution without the need for a time consuming and expensive vacuum process. 2) The polymeric intermediate layer is highly transparent and allows efficient optical decoupling. 25 201139506 3) The middle layer of the aggregation smoothes the layer below. There is less short-circuit in the OLED of this process, so the yield of component manufacturing is higher. 4) The electrical properties of the OLED are improved because the charge carriers are improved from the transparent electrode to the subsequent organic layer. The composite of the present invention can also be similarly used in the manufacture of organic solar cells (OSC) and produces similar advantages. In 纟osc, electric dust is generated by absorbing light at the electrodes. It is known to be familiar to those skilled in the art and has been repeatedly described, for example, in S. Sensfuss et al., Kunststoffe 8 (2007), p. 136. Furthermore, the invention relates to the use of a functionalized polyketone which functionalizes a preferred sulfonated polyketone, particularly preferably a repeating unit of structure (m), (IV), (v) or (VI), as a poly The anion forms a complex with a conductive polymer as a polycation, preferably a conductive polymer having a repeating unit of structure (VII). Further, the present invention relates to a coated substrate on which a preferred transparent conductive coating comprising the composite of the present invention is applied. The substrate may be especially a film, particularly preferably a polymer film, and particularly preferably a polymer film or a glass plate of a thermoplastic polymer. Further, the present invention relates to a method for producing a coated substrate, which comprises the following processing steps. : i) providing a substrate; η) coating the substrate with a composition comprising the composite of the invention. In the processing step i) of the method for producing a coated substrate of the present invention, a substrate is first provided, and the substrate is preferably one of the above substrates. In process step ii), the substrate is then coated with composition 26 201139506 comprising the composite of the invention. In this connection, it is preferred that the liquid or dispersion containing one or more solvents or dispersants and the composite of the present invention be applied to certain regions of the substrate or substrate, and then evaporate at least - ^ Some solvents or dispersants, which may be carried out, for example, by simply air drying, drying in an oven, as appropriate. Further, the present invention relates to a coated substrate obtainable by this method. The present invention also relates to an electronic component comprising the coated substrate of the present invention or a coated substrate obtainable by the method of the present invention for producing a coated substrate. The electronic component is preferably an organic light emitting diode or Organic solar cells. In the organic light-emitting diode, the coating of the substrate may particularly serve as a hole injection layer or a hole transport layer. However, it is also conceivable that the composite of the present invention is used in other electronic components such as capacitors. The following examples are merely illustrative of the invention and should not be construed as limiting. Example fA^J__LA_±gD〇T and s-ΡΕΕΚ He borrowed the public survey φ. 25.25g polyetheretherketone Victrex® PEEK·TM 150 PF (supplier: VlCtreX EUr〇pa GmbH, Hofheim/Ts.) Measured to 250.0 g of 95% sulfuric acid. After heating the mixture at 5 Torr under 1 Torr, the reaction mixture was cooled to 0 ° C and stirred at this temperature in a mixture of 650 mi water and 325 ml of n-butanol while cooling. . Discard the aqueous phase. The m 1 water was washed with butanol phase twice and the wash water was discarded. Subsequently, 15 0 m 1 of water was added to the butanol phase and the pH of the mixture was 27 201139506 and to a pH of about 6 with 12 ml of 30% strength NaOH. Then, the butanol was distilled off on a rotating burr 3! μ stone, and the water was gradually replaced with water, and finally the volume was concentrated to about 1/3. Jiang, 300 ml of methanol was added to this aqueous solution and the sodium sulfate which had been precipitated was filtered out. The filtrate was treated 3 times with M> milk ion exchanger (Lewatit MP® 62 and Lewatit® Monoplus S 1〇〇, **. τ 仏 · Lanxess AG) to remove sulfate and sodium ions, followed by evaporation to The residue was dried and dried at 0.5 mbar. The yield was 23 6 gs_pEEK. The degree of sulfonation of each repeating unit of the polymer was 1.09 (determined by titration with 〇.1N sodium hydroxide solution), which corresponds to an equivalent of 286 g/mol. 1.5 1 glass container is equipped with a stirrer and a thermometer. At 25. Under the arm, 1,338 g of water, 10 g of polyfluorene ketone' 2.36 gi〇〇/0 concentration of iron (III) sulfate solution and 1.91 g of ethyldioxythiophene EDT (Clevios®) M V2, HC Starck Clevios GmbH, Germany) Mix thoroughly for 15 minutes. Subsequently, add 4.66 g of sodium peroxodisulfate and stir the mixture at 25 hours for 24 hours. Then add 57 g of anion exchanger (Lewatit® MP 62, Lanxess AG, Leverkusen, Germany) and 111 g of cation exchanger (Lewatit® S 100 H, Lanxess AG, Leverkusen, Germany). The mixture was stirred for 2 hours. The ion exchange was then separated through a filter paper and the dispersion was passed through a 0.2 μm filter. Solid content: 0.61% Viscosity: 2 mPas (Haake RV 1,20 ° C, 700 s·1) Example 2: 劁i tells that the layer of the PEDOT/s-PEEK is on the rotary evaporator from the example The dispersion of 1 was concentrated to a solids content of 1.36%. The cleaned glass substrate was placed on a rotary paint coater (lacquer whirler 28 201139506 coater) and 5 ml of the concentrated dispersion was distributed on the substrate. The excess dispersion was then separated by rotating the plate at 500 rpm for 30 seconds. Thereafter, the substrate coated in this manner was dried on a hot plate at 200 ° C for 3 minutes. The layer thickness is 65 nm (Tencor, Alphastep 500). Conductivity was determined by vapor deposition of a 2.5 cm length Ag electrode at a distance of 0.5 mm through a mask. The surface resistance measured by an electrometer was multiplied by the layer thickness to obtain a specific resistance. The specific resistance of the layer was 1,760 0 hm.cm. This layer is transparent. Solution 3: Storage at high temperature 50 g of the dispersion from Example 1 was stored at 50 ° C for 16 days. The sulfate content after storage is 7 ppm. Therefore, the sulphate concentration remains constant in terms of measurement accuracy. The resulting composite did not separate sulfate at a temperature of 50 °C. Comparative Example 1: Storage at a high temperature A conventional PEDOT:PSS dispersion (cievi〇s® p vp AI 4083, H_C. Starck Clevios Co., Ltd.) was used for reference experiments: solid content 1.6% Sulfate content 5 ppm pH 1. 5 50 g of this material was also stored at 50 ° C for 16 days. The sulfate content after storage was 22 ppm and therefore increased significantly. Example 3 shows that the dispersion of the present invention from Example 1 did not separate sulfate at room temperature compared to the known PEDOT:PSS complex.

膏施例4 :製造OLED 29 201139506 使用來自實施例丨之本發明之分散液建構有機發光二 極體(OLED )。製造OLED之程序如下: 1·製備塗有ITO之某柘 將塗有ITO之玻璃切割成尺寸為5〇 mmx5〇 mm之片 (基板)且用光致抗触劑(photolacquer)結構化成四條平 行線,各為2 mm寬及5 cm長。隨後,在超音波浴中用〇_3〇/〇 濃度之Mucasol溶液清潔基板,用蒸餾水沖洗且在離心機中 旋轉乾燥。在即將塗佈之前’在UV/臭氧反應器(PR_1〇〇, UVP公司,Cambridge,GB)中清潔塗有IT〇面1〇分鐘。 2. 塗覆電洞注入層 過濾來自實施例1之約5 ml本發明之分散液(MiUip〇re HV ’ 0.45 μη〇。將經清潔之塗有ιτο的基板置於旋轉塗漆 機上且將經過濾之溶液分佈於基板之塗有IT〇面上。接著 藉由在600 rpm下旋轉板30秒來分離出過量溶液。隨後, 在200°C下在熱板上乾燥以此方式塗佈之基板5分鐘。用測 表面計(Tencor,Alphastep 500)量測,層厚度為約50 nm。 3. 塗覆電洞傳輪層及發射極屉 將塗有來自實施例1之分散液的ITO基板轉移至氣相 沈積單元(Uni vex 350,Ley bold )中。在1〇·3 Pa之壓力下, 將首先60 nm NPB( N,N’-雙(萘-1-基)-N,N,-雙(苯基)聯苯胺) 電洞傳輸層,接著50 nm A1Q3 (參(8-羥基喹啉)鋁)發射極 層以1入/sec之氣相沈積速率連續氣相沈積。 4. 塗覆金1陰極 接著將層系統轉移至具有N2氛圍及積體氣相沈積單元 201139506 (Edwards )之手套工作箱中,且氣相沈積金屬電極。為此, 將基板置於遮蔽罩上’層系統向下。該遮蔽罩包含與IT〇 帶父叉且垂直於此等ΙΤΟ帶而定向之2 mm寬的長方形槽。 在P = 10·3 Pa之壓力下,自兩個氣相沈積皿依次氣相沈積 0.5 nm厚的LiF層及200 nm厚的A1層。氣相沈積速率對 於LiF為1入/s且對於A1為1〇入/8。個別〇LED之面積為 4.0 mm2。 5. OLED之特性化 有機LED之兩個電極經由電導線連接(接觸)於電壓 源。正極連接於ιτο電極且負極連接於金屬電極。對〇lED 電流及電致發光強度(用光電二極體(EG&G C3〇8〇9E)偵 測)與電壓之相關性作圖。接著藉由使j = 3·84 mA之恆定 電流流過配置並監測作為時間函數之電壓及光強度來測定 壽命。 选平父耳现例2 ·符初;知分散股米思垃U七七jj 程序如同實施例5,不同之處在於在第二加工步驟中, 所用中間層不為來自實施例㈣之本發明之分散液,而是 通常使用Clevis® P VP AI 4〇83 ( H c加他有限公 司)作為OLED建構之標準物。為此,過濾ai ,在700 —下旋轉塗佈30秒,接著在則。c下在熱板上乾燥$分 鐘。層厚度為5〇nm,比電阻為l,290 Ohm.Cm。 中P曰 1居夕⑴叩 程序如同實施例4及$,τ η Λ 士 ju 貝夂5,不同之處在於完全省去聚合中 間層且不存在加工步驟2。 31 201139506Paste Example 4: Fabrication of OLED 29 201139506 An organic light-emitting diode (OLED) was constructed using the dispersion of the invention from Example. The procedure for manufacturing an OLED is as follows: 1. Prepare a ITO coated ITO. Cut the ITO-coated glass into a 5 〇mm x 5 〇 mm piece (substrate) and structure it into four parallel lines with a photolacquer. Each is 2 mm wide and 5 cm long. Subsequently, the substrate was cleaned in a sonic bath with a 〇3〇/〇 concentration of Mucasol solution, rinsed with distilled water and spin dried in a centrifuge. The IT coating was cleaned in a UV/ozone reactor (PR_1〇〇, UVP, Cambridge, GB) for 1 minute immediately before coating. 2. Coating the hole injection layer to filter about 5 ml of the dispersion of the invention (MiUip〇re HV ' 0.45 μη〇 from Example 1. Place the cleaned ιτο-coated substrate on a rotary painting machine and The filtered solution was distributed on the IT coated surface of the substrate, and then the excess solution was separated by rotating the plate at 600 rpm for 30 seconds, and then dried at 200 ° C on a hot plate in this manner. The substrate was 5 minutes. The layer thickness was measured by a surface meter (Tencor, Alphastep 500), and the layer thickness was about 50 nm. 3. The coated hole transport layer and the emitter tray were coated with the ITO substrate from the dispersion of Example 1. Transfer to a vapor deposition unit (Uni vex 350, Ley bold). Under a pressure of 1 〇·3 Pa, the first 60 nm NPB (N,N'-bis(naphthalen-1-yl)-N,N, - Bis(phenyl)benzidine) hole transport layer, followed by 50 nm A1Q3 (8-hydroxyquinoline) aluminum emitter layer for continuous vapor deposition at a vapor deposition rate of 1 in / sec. The gold-coated 1 cathode then transferred the layer system to a glove box with an N2 atmosphere and integrated vapor deposition unit 201139506 (Edwards), and vapor deposition Metal electrode. To this end, the substrate is placed on the mask. The layer system is downward. The mask contains a 2 mm wide rectangular groove oriented with the IT 〇 parent fork and perpendicular to the sash. · Under the pressure of 3 Pa, a 0.5 nm thick LiF layer and a 200 nm thick A1 layer were sequentially vapor deposited from two vapor deposition vessels. The vapor deposition rate was 1 in / s for LiF and 1 intrusion for A1. /8. The area of individual 〇LED is 4.0 mm2. 5. OLED characterization The two electrodes of the organic LED are connected (contacted) to the voltage source via electrical leads. The positive electrode is connected to the ιτο electrode and the negative electrode is connected to the metal electrode. Current and electroluminescence intensity (detected by photodiode (EG & G C3〇8〇9E)) plotted against voltage. Then a constant current of j = 3.84 mA is passed through the configuration and Monitoring the voltage and light intensity as a function of time to determine the lifetime. Selecting the parent's ear 2: The beginning of the event; knowing the scattered stock Mi Si La U VII jj The procedure is the same as in Example 5, except that in the second processing step The intermediate layer used is not the dispersion of the present invention from the embodiment (4), but is usually made Clevis® P VP AI 4〇83 (Hc Plus) is used as a standard for OLED construction. For this purpose, filter ai, spin coating at 700° for 30 seconds, then dry on a hot plate at .c. $min. The layer thickness is 5〇nm, and the specific resistance is 1,290 Ohm.Cm. The middle P曰1 (1)叩 procedure is the same as the example 4 and $, τ η 士 士 ju 夂 夂 5, the difference is completely The polymerization intermediate layer is omitted and processing step 2 is absent. 31 201139506

實施例5 :比較來自實施例4及比較實施例2及3之 PLED 為證明與標準材料Clevios® P VP AI 4083相比包含來 自實施例1之本發明之分散液之OLED的改良,在各種情 況下平行加工來自實施例4及比較實施例2及3之基板, 亦即在相同條件下將氣相沈積層及陰極沈積於所有基板 上。根據實施例4及比較2所製造之OLED顯示有機發光 二極體之典型二極體性質。另一方面,根據比較實施例3 所製造之建構物均顯示電短路。 在壽命量測中,評估時間t = 0、U0及L0時之電壓及 亮度、呈商L0/1形式之電流效率、亮度下降至L0之50% 所用的時間、L0/2下之t及L0/2下之時間t時的電壓。 I = 96 mA/cm2 下之 ITO//HIL//NPB//ALQ//LiF//Al OLED 壽命 uo [V] L0 [cd/m3] 效率 [cd/Al L0/2下之t 『hi U(L0/2 下之 t) m 實施例4之OLED(根據本發明) 5.8 2,200 2.3 225 6.3 比較實施例2之OLED 6.0 2,400 2.5 15 6.2 比較實施例3之OLED 可能由於電短路而未測得壽命 因此證明聚合中間層為避免OLED發生短路所必需 的。與標準材料Clevios® P AI 4083相比,OLED中作為中 間層之來自實施例1的本發明之分散液具有明顯優點,其 壽命為1 0倍且與時間有關之電壓增加可減小。 實施例6 :使用本發明之分散液測定接觸角 類似於實施例4第2點,藉助於旋轉塗漆機將來自實 32 201139506 施例1之本發明之分散液層沈積於玻璃基板上且在2〇〇〇c下 在熱板上乾燥5分鐘。接著測定(Krtiss MicroDrop)沈積 於層上之一滴曱苯與層的接觸角。濕潤良好,以至於接觸 角小於3。,因此量測不到。Example 5: Comparison of PLEDs from Example 4 and Comparative Examples 2 and 3 to demonstrate improvement of OLEDs comprising the dispersion of the present invention from Example 1 compared to the standard material Clevios® P VP AI 4083, in various cases The substrates from Example 4 and Comparative Examples 2 and 3 were processed in parallel, that is, the vapor deposited layer and the cathode were deposited on all of the substrates under the same conditions. The OLEDs manufactured according to Example 4 and Comparative 2 show the typical diode properties of the organic light-emitting diode. On the other hand, the structures manufactured according to Comparative Example 3 all showed an electrical short. In the life measurement, the voltage and brightness at the time t = 0, U0 and L0, the current efficiency in the form of the quotient L0/1, the time when the brightness drops to 50% of L0, the t and L0 at L0/2 The voltage at time t of /2. ITO//HIL//NPB//ALQ//LiF//Al OLED lifetime I = 96 mA/cm2 uo [V] L0 [cd/m3] Efficiency [cd/Al L0/2 under t 『hi U (t0 under L0/2) m OLED of Example 4 (according to the invention) 5.8 2,200 2.3 225 6.3 OLED 6.0 of Comparative Example 2 2,400 2.5 15 6.2 OLED of Comparative Example 3 may not be measured for life due to electrical short It has thus been demonstrated that the polymeric intermediate layer is necessary to avoid OLED short circuits. Compared with the standard material Clevios® P AI 4083, the dispersion of the present invention from Example 1 as an intermediate layer in the OLED has a significant advantage in that its lifetime is 10 times and the time-dependent voltage increase can be reduced. Example 6: Determining the contact angle using the dispersion of the present invention Similar to the second point of Example 4, a dispersion layer of the present invention from Example 32 201139506 was deposited on a glass substrate by means of a rotary paint coater and Dry on a hot plate for 5 minutes at 2 〇〇〇c. Next, the contact angle of one of the benzophenones deposited on the layer (Krtiss MicroDrop) with the layer was measured. The wetting is so good that the contact angle is less than 3. Therefore, the measurement is not available.

Ik.較實施例4 :使用習知分散液測定接觸角 類似於實施例6,測定參考材料cievios® P VP AI 4083 層與甲苯之接觸角。濕潤良好,以至於接觸角小於30,因 此量測不到。 1匕-敉實施例5 :使用基於全氟化磺酸高分子之習知分散 液測定接觸备 類似於實施例6 ’測定對應於EP 1 564 250 A1之參考 材料層(亦即全氟化磺酸高分子與導電高分子之混合物) 的接觸角:a = 48<。 根據實施例6及比較實施例4及5,用基於曱苯之溶液 對包含本發明之調配物的層的濕潤與clevi〇s® p AI 4〇83同 樣良好’但另一方面’顯著優於對應於Ep 1 564 250 A1之 參考材料。 i施例7 :由PEDOT及s-ΡΕΚΚ唧,今个、、产 將25 g聚醚酮酮(0xpekk® c,供應商:P〇iytron KUnstst0fftechnik 有限公司,KG,Bergisch Giadbach, Germany)添加至62.5 g 95%濃度之硫酸與187 5 g發煙硫 酸(S〇3含量為20% )之混合物中。在i 2〇它下攪拌混合物 3〇小時,接著在140 C下攪拌15小時。接著將經冷卻之反 應混合物引入1,800 ml水中且將5〇〇ml 丁醇添加至所形成 33 201139506 之溶液中。分離各相後,每次用100ml 丁醇萃取水相兩次。 用水洗蘇丁醇相。接著合併丁醇相,添加2〇ml3〇%濃度之 氫氧化鈉溶液,接著用30%濃度之氫氧化鈉溶液進一:調 整混合物至6.3之pH值。濃縮水相至1〇〇ml且添加25〇如 甲醇。自已沈澱出之硫酸鈉傾析出上清液並蒸發。將殘餘 物溶解於200 ml水中且用離子交換劑(Lewam Mp® 62及Ik. Comparative Example 4: Determination of Contact Angle Using Conventional Dispersions Similar to Example 6, the contact angle of the reference material cievios® P VP AI 4083 layer with toluene was determined. The wetting is so good that the contact angle is less than 30, so the amount is not measured. 1匕-敉Example 5: Determination of a contact preparation using a conventional dispersion based on a perfluorinated sulfonic acid polymer similar to Example 6 'determination of a reference material layer corresponding to EP 1 564 250 A1 (ie, perfluorinated sulfonate) Contact angle of a mixture of an acid polymer and a conductive polymer: a = 48 <. According to Example 6 and Comparative Examples 4 and 5, the wetting of the layer comprising the formulation of the invention with a toluene-based solution was as good as clevi〇s® p AI 4〇83, but on the other hand, it was significantly better than Corresponds to the reference material of Ep 1 564 250 A1. i Example 7: By PEDOT and s-ΡΕΚΚ唧, this product, 25 g of polyetherketoneketone (0xpekk® c, supplier: P〇iytron KUnstst0fftechnik GmbH, KG, Bergisch Giadbach, Germany) was added to 62.5 g 95% strength sulfuric acid in a mixture with 187 5 g fuming sulfuric acid (20% S〇3 content). The mixture was stirred under i 2 Torr for 3 hrs, then at 140 C for 15 hr. The cooled reaction mixture was then introduced into 1,800 ml of water and 5 ml of butanol was added to the resulting solution of 33 201139506. After separating the phases, the aqueous phase was extracted twice with 100 ml of butanol each time. The butanol phase was washed with water. The butanol phase was then combined, 2 mM ml of a 3% sodium hydroxide solution was added, followed by a 30% strength sodium hydroxide solution: the mixture was adjusted to a pH of 6.3. The aqueous phase was concentrated to 1 〇〇 ml and 25 〇 such as methanol was added. The sodium sulfate precipitated from the supernatant was decanted and evaporated. Dissolve the residue in 200 ml of water and use an ion exchanger (Lewam Mp® 62 and

Lewatit®M〇noplusS 100,供應商:LanxessAG)處理溶液 3次以移除硫酸根及鈉離子,接著蒸發至乾並在〇 5毫巴下 後乾燥殘餘物。產量為17 g s-PEKK ,藉由用〇」N氫氧化 鈉溶液滴定所測定,高分子之每一重複單元的磺化度為 0.97,相當於389 g/mol之當量。 在25 C下’在具有攪拌器及溫度計之5〇〇 mi燒瓶中, 將4.92 g磺化聚醚酮酮、〇.5 g 1〇%濃度之硫酸鐵(ΠΙ)水溶 液及1.91 g 3,4·伸乙基二氧基噻吩(Clevi〇s® M v2, H c Starck Clevios有限公司,Germany )在248 g水中充分搜拌 30分4里直至出現透明溶液。隨後’添加〇·94 g過二硫酸納 且在25 C下揽拌混合物24小時。接著添加1 8 g陰離子交換 劑(LewatitMP® 62, Lanxess AG,Leverkusen,Germany)及 30 g 陽離子交換劑(Lewatit® S 100 H,Lanxess AG, Leverkusen,Germany )。攪拌混合物2小時。接著經濾紙分 離出離子交換劑且使分散液通過0.45 μιη過濾器。獲得 PEDOT:s-PEKK複合物之藍色分散液,有可能藉由刀塗由其 製造導電層。 實施例8 :包含本發明之調配物的有機太陽雷池 34 201139506 使用來自實施例1之本發明之調配物建構有機太陽電 池(OSC )。製造OSC之程序如下。 1. 製備塗有ιτο之基板 將塗有ΪΤΟ之玻璃(Merck Balzers AG,FL,部件編號 253 674 XO)切割成25 mmx25 mm尺寸之片(基板)。接 著在超音波浴中用3%濃度之Mucasol溶液清潔基板15分 鐘。隨後’用蒸餾水沖洗基板且在離心機中旋轉乾燥。在 即將塗佈之前,在UV/臭氧反應器(PR-ioo,XJVP公司, Cambridge,GB )中清潔塗有ITO面10分鐘。 2. 塗覆電洞提取層(ΗΚΤΛ 過濾來自實施例1之約1 ml本發明之調配物(Millipore HV,0.45 μη〇。將經清潔之塗有ΙΤ〇的基板置於旋轉塗漆 機上且將經過濾之溶液分佈於基板之塗有ΙΤ〇面上。接著 藉由在500 rpm下旋轉板30秒來分離出過量溶液^隨後, 在200°C下在熱板上乾燥以此方式塗佈之基板5分鐘。層厚 度為約 50 nm ( Tencor,Alphastep 500 )。 3. 塗覆光吸收層(LAL) 在室溫下將50 mg高分子P3HT ( BASF,Sempiolid P 200)及 50 mg 芙樂烯 pCBm ( So-lenne [60] PCBM)溶解 於5 ml二氣苯中。為達成材料於溶液中之完全溶解,使用 搜拌鉤(stirring fish)攪拌溶液約1〇小時。接著經針筒過 濾器(Millipore HV,0.45 μηι)過濾溶液,接著分佈於旋轉 塗漆機上之基板上’且藉由在750 rpm下旋轉板30秒來分 理出過量溶液。隨後’在l3〇t下在熱板上乾燥以此方式塗 35 201139506 佈之基板Η)分鐘。層厚度為l〇〇nm(Tenc〇r 5⑷。此操作及所有以下操作均在手套工作箱系統中於純P 氮氣氛圍下進行。 4. 陰極 將金屬電極作為陰極氣相沈積於具有層系統 ITO//HEL//LAL之基板上。將配備有兩個熱汽化器之真空裝 置㈤醫ds)用於此操作。用具有2 5 _及5麵直徑: 孔的遮蔽罩覆蓋層系統。將基板置於旋轉樣品固持器上, 所安裝之遮蔽罩向下。樣品固持器之尺寸允許同時容納四 個基板。在 P = 1〇·3 + τ ,Lewatit® M〇noplus S 100, supplier: Lanxess AG) treated the solution 3 times to remove the sulfate and sodium ions, followed by evaporation to dryness and drying the residue after 5 mbar. The yield was 17 g s-PEKK, and the degree of sulfonation of each repeating unit of the polymer was 0.97, equivalent to 389 g/mol equivalent, as determined by titration with a 〇N sodium hydroxide solution. 4. At 25 C 'in a 5 〇〇mi flask with a stirrer and a thermometer, 4.92 g of sulfonated polyetherketone ketone, 〇5 g of a 1% by weight aqueous solution of iron sulphate (ΠΙ) and 1.91 g of 3,4 • Ethyldioxythiophene (Clevi〇s® M v2, H c Starck Clevios, Germany) was thoroughly mixed in 248 g of water for 30 minutes and 4 minutes until a clear solution appeared. Subsequently, 〇·94 g of sodium persulfate was added and the mixture was stirred at 25 C for 24 hours. Then, 18 g of an anion exchanger (Lewatit MP® 62, Lanxess AG, Leverkusen, Germany) and 30 g of a cation exchanger (Lewatit® S 100 H, Lanxess AG, Leverkusen, Germany) were added. The mixture was stirred for 2 hours. The ion exchanger was then separated by filter paper and the dispersion was passed through a 0.45 μηη filter. A blue dispersion of the PEDOT:s-PEKK complex is obtained, and it is possible to manufacture a conductive layer therefrom by knife coating. Example 8: Organic solar thunder pool containing a formulation of the invention 34 201139506 An organic solar cell (OSC) was constructed using the formulation of the invention from Example 1. The procedure for manufacturing OSC is as follows. 1. Preparation of a substrate coated with ιτο The glass coated with enamel (Merck Balzers AG, FL, part number 253 674 XO) was cut into 25 mm x 25 mm sized sheets (substrates). The substrate was then cleaned with a 3% strength Mucasol solution in an ultrasonic bath for 15 minutes. The substrate was then rinsed with distilled water and spin dried in a centrifuge. The ITO surface was cleaned for 10 minutes in a UV/ozone reactor (PR-ioo, XJVP, Cambridge, GB) just prior to coating. 2. Coating the hole extraction layer (ΗΚΤΛ Filter about 1 ml of the formulation of the invention from Example 1 (Millipore HV, 0.45 μη〇. Place the cleaned ruthenium-coated substrate on a rotary painting machine and The filtered solution was distributed on the coated surface of the substrate, and then the excess solution was separated by rotating the plate at 500 rpm for 30 seconds, and then dried at 200 ° C on a hot plate. The substrate is 5 minutes. The layer thickness is about 50 nm (Tencor, Alphastep 500). 3. Coating the light absorbing layer (LAL) 50 mg of polymer P3HT (BASF, Sempiolid P 200) and 50 mg of Fule at room temperature The ene pCBm ( So-lenne [60] PCBM) is dissolved in 5 ml of di-benzene. To achieve complete dissolution of the material in the solution, the solution is stirred for about 1 hour using a stirring fish. (Millipore HV, 0.45 μηι) filtered solution, then distributed on a substrate on a rotary painting machine' and the excess solution was separated by rotating the plate at 750 rpm for 30 seconds. Then 'heated at l3〇t Drying on the board is applied in this way 35 201139506 cloth substrate Η) minutes. Layer thickness is l 〇〇nm (Tenc〇r 5(4). This operation and all the following operations were carried out in a glove box system under a pure P nitrogen atmosphere. 4. The cathode vapor-deposited the metal electrode as a cathode in a layered system ITO//HEL/ On the substrate of /LAL, a vacuum device equipped with two thermal vaporizers (5) medical ds) is used for this operation. The cover system is covered with a mask having a diameter of 2 5 _ and 5 faces: the substrate is placed in a rotating sample holding On the device, the installed mask is downward. The size of the sample holder allows four substrates to be accommodated at the same time. At P = 1〇·3 + τ ,

Pa之壓力下自兩個熱汽化器依序氣相 沈積 25nm 厚的 CaJi» - 手们la廢及8G nm厚的“層。氣相沈積速率 對於Ba㈣為1〇A/s且對於岣為2〇A/s。分離之金屬電 極的面積分別為4.9 mm2及28 mm2。 5· P_SC之牿枓化 同樣在僅填充有氮氣之手套工作箱系統中特性化 OSC,在該手套工作㈣統底部插人太陽模擬器(她s, ㈣r Centest 575 )且弓i導其單色光朝上。具有⑽之固持 窃位於光錐中。自樣品平面至底部之距離為約1〇咖。光強 度可用插人之光柵渡光片來削弱。用日射強度計(Kipp & Z〇nen’CM10)測定樣品平面處之強度且其為約5〇〇w/m2。 用熱感測器(PT丨00)測定樣品固持器之溫度且其最大為 40°C。 藉由將ITO電極連接於Au觸針(正極)且將可撓性 Au細絲壓於金屬電極之一(負極)上來電接觸〇sc。經由 36 201139506 通向電流/電壓源(Keithley 2800 )之電纜連接兩個觸點β 首先覆蓋光源且量測深色特徵線。為此,對樣品施加電壓, 在-2至+2 V範圍内變化電壓並記錄電流。接著類似地在照 射下對電流/電壓特徵線作圖。自此等資料,根據〇n〇rM ΕΝ 60904-3測定與太陽電池有關之參數,諸如轉換效率、開路 電壓、短路電流及填充因數。 實施例9 :無HEL之OSC參者雷池 類似於實施例8建構無HEL之參考電池,不同之處在 於省去加工步驟2「塗覆電洞提取層」。 f施例10 :具有替代性HEL之OSC I _平a 類似於實施例8建構無HEL之參考電池’不同之處在 於在加工步驟2中,使用替代性材料,亦即aevi〇s<g) p八工 4083 (H.C. SUrck Clevios 有限公司,Leverkusen)替代本 發明之調配物。加工m中之條件為:過遽(MUiip〇re 1^,0.45/^)約1„11^^1>八14〇83溶液。將經清潔 之塗有ΙΊΌ的基板置於旋轉塗漆機上且將經過濾之溶液分 佈於基板之塗有ΓΓΟ面上。接著藉由在75〇啊下旋轉板 3〇秒來分離出過量溶液。隨後’在靴下在熱板上乾燥以 此方式塗佈之基板5分鐘。層厚度為約5〇 丁⑶⑽,Under the pressure of Pa, 25nm thick CaJi»-hand waste and 8G nm thick "layers were vapor deposited from two thermal vaporizers. The vapor deposition rate was 1〇A/s for Ba(IV) and 2〇 for Ba(4). A/s. The area of the separated metal electrodes is 4.9 mm2 and 28 mm2, respectively. 5. The deuteration of P_SC is also characterized in the glove box system filled with nitrogen only, in which the bottom of the glove is inserted (4) The sun simulator (she s, (4) r Centest 575) and bows its monochromatic light upwards. The anchor with (10) is located in the light cone. The distance from the sample plane to the bottom is about 1 〇 coffee. The grating was attenuated by a light-emitting sheet. The intensity at the plane of the sample was measured with a pyranometer (Kipp & Z〇nen'CM10) and it was about 5 〇〇 w/m 2 . Measured with a thermal sensor (PT 丨 00) The temperature of the sample holder and its maximum is 40 ° C. By connecting the ITO electrode to the Au stylus (positive electrode) and pressing the flexible Au filament against one of the metal electrodes (negative electrode), the 〇sc is electrically contacted. 36 201139506 Cable to the current/voltage source (Keithley 2800) connects two contacts β first covers the light And measure the dark characteristic line. To this end, apply a voltage to the sample, change the voltage in the range of -2 to +2 V and record the current. Then, similarly, the current/voltage characteristic line is plotted under illumination. Parameters related to solar cells, such as conversion efficiency, open circuit voltage, short circuit current, and fill factor, are determined according to 〇n〇rM ΕΝ 60904-3. Example 9: OSC without HEL is similar to Example 8 construction without HEL The reference battery is different in that the processing step 2 "coating the hole extraction layer" is omitted. f Example 10: OSC with alternative HEL I_ping a Similar to Example 8 constructing a reference cell without HEL' is different in the processing step 2, using an alternative material, ie aevi〇s <g) p. 8408 (HC SUrck Clevios Co., Ltd., Leverkusen) replaces the formulation of the present invention. The conditions for processing m are: MU 遽 (MUiip〇re 1^, 0.45 / ^) about 1 „11^^1> 八14〇83 solution. The cleaned enamel-coated substrate is placed on the rotary painting machine. And the filtered solution is distributed on the coated surface of the substrate, and then the excess solution is separated by rotating the plate for 3 seconds under 75 Torr. Then, it is coated by drying on a hot plate under the boot. The substrate is 5 minutes. The layer thickness is about 5 〇 (3) (10),

Alphastep 500 ) ° f jfe例11 :比較實施例只」〇 ^ 在相同實驗條件下對來自眘& A,, 卞采自貫施例1-3之OSC的電流/電 壓特徵線作圖。在結果表中,担& & 禾衣中,k取與評估有關之參數;電 池面積(A)、輻照度(P0)、短路 路電Isc)、開路電壓(Vm)、 37 201139506 工作點之電輸出(Pmax )、填充因數(FF )及轉換效率(r/ )。 結果表: A/cm2 P0 /Wm·2 Λ Isc /mA/crn V〇c/V Pmax /mW/cm2 FF V 來自實施例8之電池 (本發明) 0.049 487 3.78 0.562 1.31 0.61 2.68 0.049 487 3.65 0.557 1.34 0.66 2.75 0.282 487 3.74 0.567 1.33 0.63 2.73 0.282 487 3.53 0.559 1.25 0.63 2.56 來自實施例9之電池 (無HEL之參考電池) 0.049 488 所有研究之電池均具有短路 0.28 488 來自實施例10之電池 (參考 Clevios® PAI4083) 0.049 4S7 4.62 0.532 1.47 0.6 3.02 0.049 487 4.54 0.531 1.47 0.61 3.02 0.282 487 4.48 0.54 1.28 0.53 2.62 0.282 487 4.44 0.538 1.25 0.53 2.57 根據結果表,本發明之調配物尤其適合用作OSC之中 間層且改良配置對短路之電阻。與參考Clevios® P AI4083 之比較顯示原則上達成類似OSC性質,開路電壓及填充因 數得到改良。 與Clevios® P AI4083相比,本發明之調配物的另一優 點在於材料具有較高熱穩定性,且正如所料,此會使得OSC 壽命較長。 【圖式簡單說明】 無 【主要元件符號說明】 無 38Alphastep 500) ° f jfe Example 11: Comparative Example only 〇 ^ Under the same experimental conditions, the current/voltage characteristic lines from the OSC of Shen & A, 自 自 1-3 were plotted. In the results table, in the && & clothing, k take the parameters related to the evaluation; battery area (A), irradiance (P0), short circuit power Isc), open circuit voltage (Vm), 37 201139506 operating point Electrical output (Pmax), fill factor (FF), and conversion efficiency (r/). Result table: A/cm2 P0 /Wm·2 Λ Isc /mA/crn V〇c/V Pmax /mW/cm2 FF V Battery from Example 8 (present invention) 0.049 487 3.78 0.562 1.31 0.61 2.68 0.049 487 3.65 0.557 1.34 0.66 2.75 0.282 487 3.74 0.567 1.33 0.63 2.73 0.282 487 3.53 0.559 1.25 0.63 2.56 Battery from Example 9 (reference cell without HEL) 0.049 488 All batteries tested had a short circuit of 0.28 488 from the battery of Example 10 (refer to Clevios ® PAI4083) 0.049 4S7 4.62 0.532 1.47 0.6 3.02 0.049 487 4.54 0.531 1.47 0.61 3.02 0.282 487 4.48 0.54 1.28 0.53 2.62 0.282 487 4.44 0.538 1.25 0.53 2.57 According to the results table, the formulation of the invention is particularly suitable for use as an intermediate layer of OSC and improved Configure the resistance to the short circuit. A comparison with the reference Clevios® P AI4083 shows that similar OSC properties are achieved in principle, and the open circuit voltage and fill factor are improved. Another advantage of the formulations of the present invention over Clevios® P AI4083 is that the material has a higher thermal stability and, as expected, this results in a longer OSC life. [Simple diagram description] None [Main component symbol description] None 38

Claims (1)

201139506 七、申請專利範圍: 1. 一種包含至少一種視情況經取代之導電高分子及至 少一種官能化多酮之複合物,其特徵在於該多酮為在其重 複單元中包含(-CO-)基團之高分子且在此等重複單元中此 (-CO·)基團經兩個芳族基連接。 2. 如申請專利範圍第1項之複合物,其特徵在於該官能 化多酮包含通式(I)重複單元 0 _· [ Ί Ri-Arj-U-Arj-- L Jn 其中 Ar,及Ai"2可為相同或不同’且為視情況經取代之芳族, Ri為具有1至80個碳原子、(_c〇_)基團或氧原子之視 情況經取代之有機基團且 η為5至5,〇〇〇之整數。 3.如申请專利範圍第1項或第2項之複合物,其特徵在 於該官能化多酮包含通式(Π)重複單元201139506 VII. Patent application scope: 1. A composite comprising at least one optionally substituted conductive polymer and at least one functionalized polyketone, characterized in that the polyketone is contained in its repeating unit (-CO-) The polymer of the group and in this repeating unit the (-CO.) group is attached via two aromatic groups. 2. The composite according to claim 1, characterized in that the functionalized polyketone comprises a repeating unit of the formula (I) 0 _· [ Ί Ri-Arj-U-Arj-- L Jn wherein Ar, and Ai&quot ; 2 may be the same or different 'and an optionally substituted aromatic, Ri is an optionally substituted organic group having 1 to 80 carbon atoms, a (_c〇_) group or an oxygen atom and η is 5 to 5, an integer of 〇〇〇. 3. A composite according to claim 1 or 2, characterized in that the functionalized polyketone comprises a repeating unit of the formula (Π) 39 201139506 其中 Ar,及Ah可為相同或不同且表示芳族, 乂,及X2可為相同或不同且各表示磺酸、磺酸酯、膦酸、 膦酸酯 '羧酸或羧酸酯基團, a及b可為相同或不同且各彼此獨立地表示在〇至2範 圍内之整數或非整數’非整數意謂所提及之該酸並不存在 於每一重複單元中’而是僅存在於該等重複單元之相應部 分中, ~具有與如申請專利範圍第2項中之Rl相同的含義, 且 n為5至5,000之整數。 4·如申請專利範圍第丨項至第3項中至少一項之複合 物其特徵在於該官能化多酮包含通式(Ila )重複單元39 201139506 wherein Ar, and Ah may be the same or different and represent aromatic, 乂, and X2 may be the same or different and each represents a sulfonic acid, sulfonate, phosphonic acid, phosphonate 'carboxylic acid or carboxylate group The group, a and b may be the same or different and each independently represents an integer or non-integer 'non-integer in the range of 〇 to 2 means that the acid mentioned is not present in each repeating unit' Only in the corresponding portions of the repeating units, ~ has the same meaning as R1 in the second item of the patent application, and n is an integer from 5 to 5,000. 4. The composite according to any one of claims 1-3 to 3, characterized in that the functionalized polyketone comprises a repeating unit of the formula (Ila) 其中 a b及R2具有如申請專利範圍第3項中所給出之含 義,且 M表示金屬陽離子或Η。 5.如申凊專利範圍第1項至第4項中至少一項之複合 40 so3mWherein a b and R 2 have the meanings given in item 3 of the scope of the patent application, and M represents a metal cation or ruthenium. 5. If the application of at least one of items 1 to 4 of the scope of the patent application is 40 so3m 201139506 物,其特徵在於該官I 通式(III) 通式(IV) p- so3m a 通式(V) 或通式(VI) -fU- so3M 201139506 其中 a、b、c及d可為相同或不同且各表示在〇至2範圍内 之整數或非整數’非整數意謂所提及之該酸並不存在於每 一重複單元,而是僅存在於該等重複單元之相應部分中, Μ表示金屬陽離子或Η, 且 η為5至5,000之整數。 6 _如申請專利範圍第1項至第5項中至少一項之複合 物’其特徵在於該導電高分子包含含通式(VII)重複單元 之視情況經取代之聚噻吩201139506, characterized by the official I Formula (III) Formula (IV) p- so3m a Formula (V) or Formula (VI) -fU- so3M 201139506 wherein a, b, c and d may be the same Or an integer or non-integer 'non-integer, denoted in the range of 〇 to 2, means that the acid mentioned is not present in each repeating unit, but only in the corresponding part of the repeating unit, Μ represents a metal cation or ruthenium, and η is an integer from 5 to 5,000. 6_ The composite according to at least one of claims 1 to 5, characterized in that the conductive polymer comprises an optionally substituted polythiophene containing a repeating unit of the formula (VII) (VII) R·4及Rs彼此獨立地各表示Η '視情況經取代之c丨_c i s 烷基或視情況經取代之Cl-Cl8烷氧基,心與& 一起表示視 情況經取代之Crq伸烷基,其中—或多個c原子可經一或 多個選自0或S之相同或不同雜原子置換,較佳為Ci_Cs 二氧基伸烷基、視情況經取代之c 氧基硫雜伸烷基或視(VII) R·4 and Rs each independently represent Η 'optionally substituted c丨_cis alkyl or optionally substituted Cl-Cl8 alkoxy, and the heart together with & represents substitution as appropriate Crq alkyl, wherein - or a plurality of c atoms may be substituted by one or more of the same or different heteroatoms selected from 0 or S, preferably Ci_Cs dioxyalkylene, optionally substituted c-oxysulfide Heteroalkyl or 42 201139506 之雜原子置換。 , 7 ·如申請專利範圍第6項之複合物,其特徵在於該聚噻 吩包含通式(VII-a)及/或(VII-b)之重複單元42 201139506 Heteroatom replacement. 7. A composite according to claim 6 which is characterized in that the polythiophene comprises a repeating unit of the formula (VII-a) and/or (VII-b) 其中 A表示視情況經取代之C!-C5伸烷基,較佳為視情況經 取代之C2-C3伸烷基, Y表示Ο或S, Re表示直鏈或分支鏈、視情況經取代之烷基, 較佳為直鏈或分支鏈、視情況經取代之C,-CM烷基;視情 況經取代之Cs-Cu環烷基;視情況經取代之c6-C14芳基; 視情況經取代之C7-C1S芳烷基;視情況經取代之c7-c18^ 芳基;視情況經取代之C, -C4羥基烷基或經基,且 y表示0至8、較佳0、1或2、尤其較佳〇或!之整數, 且 其中在若干個基團R_6鍵結於A之情況下’此等基團可 為相同或不同。 8·如申請專利範圍第7項之複合物,其特徵在於該聚嘍 43 201139506 吩為聚(3,4-伸乙基二氧基噻吩)。 9.如申請專利範圍第1項至第8項中至少一項之複合 物,其特徵在於該複合物分散或轉於-或多種分散劑中。 10·如申請專利範圍第9項之複合物,其特徵在於該分 散液之pH值在丨至8之範圍内。 —11.-種由如申請專利範圍第6項至第8項中任一項所 定義之導電高分子及如申請專利範圍帛2項至第5項中任 -項所定義之官能化多酮製備複合物的方法,《中製備該 導電高分子之前驅物在該等磺化多酮存在下聚合。 12_ —種可藉由如申請專利範圍第u項之方法獲得的 複合物。 13.—種如申請專利範圍第i項至第1〇項及第12項中 至少一項之複合物之用途,用於製造透明導電塗料。 14·一種如申請專利範圍第1項至第1〇項及第12項中 至少一項之複合物的用途,用於製造有機發光二極體或有 機太陽電池中之電洞注入層或電洞傳輸層。 15.—種如申請專利範圍第2項至第5項中任一項所定 義之續化多酮的用途,其在與如申請專利範圍第6項至第8 項中任一項所定義之導電高分子之複合物中用作聚陰離 子。 16· —種經塗佈基板,在其上塗覆包含如申請專利範圍 第1項至第1 〇項及第12項中至少一項之複合物的塗料。 1 7.—種製造經塗佈基板的方法,其包含以下加工步驟: i)提供基板; 201139506 ii)用包含如申請專利範圍第1項至第l〇項及第12項 中至少一項之複合物的組成物塗佈該基板。 18_一種可藉由如申請專利範圍帛η帛之方法獲得的 經塗佈基板。 19. -種電子組件,其包含如申請專利範圍第Μ項或第 1 8項之經塗佈基板。 20. 如申請專利範圍第19項之電子組件其中該電子植 件為有機發光二極體或有機太陽電池。 、 八、圖式: 無 45Wherein A represents an optionally substituted C!-C5 alkylene group, preferably a C2-C3 alkylene group which is optionally substituted, Y represents hydrazine or S, and Re represents a straight or branched chain, as the case may be substituted. Alkyl, preferably straight or branched, optionally substituted C,-CM alkyl; optionally substituted Cs-Cu cycloalkyl; optionally substituted c6-C14 aryl; Substituted C7-C1S aralkyl; optionally substituted c7-c18^ aryl; optionally substituted C, -C4 hydroxyalkyl or thiol, and y represents 0 to 8, preferably 0, 1 or 2, especially better 〇 or! An integer, and wherein in the case where several groups R_6 are bonded to A, such groups may be the same or different. 8. A composite according to claim 7, characterized in that the polyfluorene 43 201139506 is exemplified by poly(3,4-extended ethyldioxythiophene). 9. A composite according to at least one of claims 1 to 8, characterized in that the composite is dispersed or transferred to - or a plurality of dispersants. 10. The composite of claim 9, wherein the pH of the dispersion is in the range of 丨 to 8. -11. - A conductive polymer as defined in any one of claims 6 to 8 and a functionalized polyketone as defined in any one of claims 2 to 5 A method of preparing a composite, wherein the conductive polymer precursor is polymerized in the presence of the sulfonated polyketone. 12_ - A compound obtainable by the method of claim U of the patent application. 13. Use of a composite according to at least one of claims i to 1 and 12 for the manufacture of a transparent conductive coating. 14. Use of a composite according to any one of claims 1 to 1 and 12 for the manufacture of a hole injection layer or hole in an organic light-emitting diode or an organic solar cell Transport layer. 15. The use of a nucleating polyketone as defined in any one of claims 2 to 5, as defined in any one of claims 6 to 8 A composite of a conductive polymer is used as a polyanion. A coated substrate on which a coating comprising a composite according to at least one of the first to the first and fourth aspects of the patent application is applied. 1 7. A method of manufacturing a coated substrate, comprising the following processing steps: i) providing a substrate; 201139506 ii) comprising at least one of items 1 through 1 and 12 of the scope of the patent application The composition of the composite coats the substrate. 18_ A coated substrate obtainable by the method of the patent application 帛η帛. 19. An electronic component comprising a coated substrate as claimed in claim 3 or item 18. 20. The electronic component of claim 19, wherein the electronic implant is an organic light emitting diode or an organic solar cell. , eight, schema: no 45
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