201134634 六、發明說明： 【發明所屬之技術領域】 多數薄晶圓。更特定言 9割成多數晶圓以供電 及其類似應用。 本發明係關於將材料塊切割成多 之’本發明係關於將矽材料塊切 子、半導體、光電池工業使用， 【先前技術】 已去種使用陣列的快速移動的多數線來將材料塊 切割成多數薄晶圓的技術 。英國專利編號2,414,204之說201134634 VI. Description of the invention: [Technical field to which the invention pertains] Most thin wafers. More specifically, 9 cut into a number of wafers for power and similar applications. The present invention relates to the cutting of a plurality of material blocks. The present invention relates to the use of tantalum material block cutters, semiconductors, and photovoltaic cells. [Prior Art] The fast moving majority of the array has been used to cut the material blocks into a plurality of Thin wafer technology. British Patent No. 2,414,204
塊切割成多數薄晶圓的任何程序中。 諸如矽、碳化矽、砷化鎵及藍石英之類的各種材料之 晶圓可從此類材料塊切割出，以用於電子、半導體及光 電應用。在光電應用中，多晶矽晶圓或單晶矽晶圓係藉 由切割大型矽塊而得。目前，使用多線切割從矽塊切割 出大量石夕晶圓’且能夠快速產生高質量的薄晶圓（<2〇〇 微求）。研磨衆能夠承載磨钱粒’或者切割線可欲有磨飯 粒研磨漿可為堵如聚乙二醇（Polyethylene glycol)之類 的溶劑’其可承載諸如碳化矽粒子之類的磨蝕粒。 藉由一陣列的平行線以適當角度進入矽塊而將溶劑載 入石夕塊中’同時該等線依長度方向高速（5-20米/秒）跑 動。目標係要以高產率及最少溶劑損失來進行切割，而 201134634 旎以低成本製成向質量晶圓。晶圓可在由磨蝕粒性質（諸 如其黏ί生尺寸及外形等）、溶劑性質及切割參數所界定 的製程窗内進行切割。 最大損失範疇之一係區域性厚度變動（Local Area Thickness Fluetuati〇n，LATF)。這些變·動發生在切割開始 期間，且會導致厚度變異，結果造成無法接受的厚薄不 一的晶圓。 發生此情況的原因為多條線會彼此吸引而兩兩成對， 其主要係由切割所用之溶劑的表面張力所導致，這樣的 張力會把一條鄰近線拉近，因此使其兩兩成對，進而導 致在「切入（cutting in)」邊緣上產生厚薄不同的晶圓， 在最差的情況下，會產生具有厚度為間距兩倍的晶圓。 當晶圓厚度及線粗度下降時，此問題更加嚴重β 將線拉近之力表示為^ = + ，其中γ為溶劑 之表面張力，L為線與線之間的溶劑薄膜長度，^為線半 徑’ R為線之間的溶劑表面的曲率’ d為線之間的中心距 離（間距-2r)，Θ為溶劑與線之間的潤溼角，而α為由溶劑 與線之間的接觸點決定的一角度，見第5圖。 本發明確認：溶劑的表面張力係用以控制線之間的力 的一重要參數’應減少此表面張力以避免區域性厚度變 異（LATF)發生》 【發明内容】 201134634 本發明提供一種用於將材料塊切割成多數晶圓的程 序，其中 —一平面陣列之平行跑動線係以與該等跑動線所成平 面垂直的方向相對於該材料塊移動； 其特徵在於： 一該陣列的線在乾燥的狀態下接觸材料塊，且被推壓 以在每一線與材料塊之間形成範圍在0.2至1.4牛頓的接 觸力，及 —使該等線在乾燥的狀態下以〇.5至2 〇米/秒的速度 範圍跑動，並在0.075至60.0秒的期間範圍内切進材料 塊中’然後才塗上切割研磨漿。 較佳為’首先接觸到該陣列線的材料塊角落係以圓角 構成，而該等線與該材料塊之間的初始接觸係發生在最 靠近該陣列線的一圓角邊緣。 另外較佳為’藉由磨擦力及降低線之間的表面吸引張 力，以及藉由形成於材料塊角落處的固定間隔的導引壓 痕’使陣列内的線維持在個別所欲位置處。 在一形式中’在線開始移動前，將材料塊推壓抵住線 使該等線形成彎曲。 在另一替代形式中，線以一初始速度跑動而與材料塊 發生初始接觸，而當施加研磨漿時，該等線會加速至一 較兩跑動速度來切穿材料塊。 較佳為，切割線的初始速度係在0.5-2.0米/秒的範圍 中。發明人所為實驗指出，可允許線與材料塊的最小距 6 201134634 離為15公分，以進行在初始乾燥狀態切割期間線與材料 塊的接觸，然後才加入切割研磨漿。如此相當於最少的 乾燥切割時間15/200或0.075秒。切割線可容忍長達二 分鐘的乾燥切割，然後便需要研磨漿進行冷卻。 另外較佳為’切割線的彎曲係指使_ 66〇毫米線在叉 毫米及7毫米之間延展，此相當於施於每一線之力f係 從0.2至1·4牛頓。 更特定言之，較佳為，切割線的彎曲係指使一 66〇毫 米線在2.5毫米及5毫米之間延展，此相當於施於每_ 線之力F係從0.5至1·0牛頓。 較佳為，切割線的較高跑動速度係在14 〇_18 〇米/秒 的範圍中。 在一形式中，切割線為一般線，研磨漿包括用以切割 材料塊的磨蝕粒《磨蝕粒可為碳化矽或鑽石。在此形式 中，較佳為，溶劑為聚乙二醇（pEG)，或占水重量的 5-1 〇〇% 〇 在另一替代形式中，切割線已嵌有用以切割材料塊的 磨餘粒’且施加研磨t以用於冷卻及自材料塊移除材 料。磨#粒可為鑽石。在此形式中，較佳為，溶劑為聚 乙二醇（PEG)’或占水重量的5_1〇〇%。 本發明亦提供一種用於前述本發明程序的設備。 本發明亦提供經由前述本發明程序或使用該程序之設 備所製成的晶圓。 201134634 【實施方式】 如第1圖所概略圖示，用於將一矽塊切割成多數薄晶 圓（用於光電或其它用途）的設備，包括：配置於矽塊12 下的一平行導引滾輪10及11(>張緊的切割線14圍繞滾 輪重覆跑動，且依序排列的線與線之間的空間窄小，如 此形成一平面陣列（或「網」）的平行線。由導引滾輪1〇 及11導引切割線圍繞其運動，使得切割線能以高速（例 如，14至18米/秒）跑動經過矽塊12，以達到將矽塊切 割成多數晶圓之目的。矽塊向下移動（D)穿過該陣列線， 以將石夕塊切割成多數晶圓。當切割線以高速跑動時，必 須引入研磨漿至切割線上以冷卻矽塊並移除廢料。研磨 漿可承載磨蝕粒，或者切割線可嵌有磨蝕粒。 如第1圖所示，石夕塊向下移動穿過該陣列線。然而， 夕塊可以&何方向移冑’只要其移動係垂直於該等平行 陣列線即可。 矽塊準確對齊是重要的 第圖所示，單一石夕塊正要被切割《然而，可切判 超L塊。例如，在—作業台上可有—列的四” 或刀在上、下作業台的二列的共八個石夕塊。亦可使 -匕的夕塊配置。當超過—個石夕塊同時被切割時，將 本發月著重在避免LATF，其可因線與線間的表面張力 而產生’進而導致多數線兩兩成對，結果產生一厚、一 ? 厚薄的連續晶圓，而非具有一致厚度的晶圓》 201134634 可藉由在導入研磨漿之前將矽塊12接觸該陣列線以 使該等線14形成彎曲15，來避免或減低由於研磨漿的 表面張力所引發的問題。由所附圖式例示對此加以說 明，圖中相當程度地誇大了初始彎曲的垂直尺寸。初始 接觸係在切割線不動下達成，或切割線移動緩慢（例如， 由0.5至2.0米/秒）下達成。 如第2圖所示，矽塊12下移D至張緊線14上，使張 力T相對於切割線所形成的平面呈一微小角度。藉由形 成彎曲15,此力的垂直分力將作用在矽塊上（圖中誇大了 角度）。 第3圖顯示相對於矽塊的力的分解的垂直分量巧。在 相當小的偏移量下，切割線張力的增加可忽略，因此由 每一線施加於矽塊的生成力F=2Ty=2T . sin(a)。實際應用 時在預先張緊及切割期間的位移量係小的。以下描述 可用於切割程序之可行的尺寸範例。 第4圖顯示矽塊12之下邊緣的特定配置。在第4圖 中，矽塊12之左側16係指定成「線内」表面，矽塊之 底。卩17係私疋成「切入」表面，而矽塊之右側丨8係指 定成「線外」表面《矽塊之下角落分別於表面16及17 之間以及表面17及1 8之間具有小的圓角2i及22。這 些圓角可相對鄰近表面呈45度，且可為從〇 5毫米至 125毫米長（在單晶矽塊中，圓角可大得多且甚至可具 有某程度的彎曲）。 當矽塊12下降以形成線之彎曲15時，線14與圓角 201134634 與線初始接觸，且該等線在未 時，會在23及24處之圓角之 壓痕。在切割線〗4加速並施加 21及22之下邊緣接合。 施加研磨漿且以低速移動 下邊緣中產生均勻間隔的 上研磨漿後，這些壓痕可用以導引切割線14。 如前所述，藉由使陣列線形成彎曲，及藉由在乾燥狀 態下開始切割’可避免或降低LATF。增加線㈣塊間的 接觸力，可使陣列線形成彎曲。如此使線與矽塊間的磨 擦力上升。在未施加研磨漿進行初始切割，可保證維持 高磨擦力。此外，由於溼的研磨漿的表面張力效應而造 成的非所欲的線成對現象，可藉由在乾燥狀態下開始切 割而降低。當切割線受到矽塊的接觸力影響時，這種線 成對效應將會減少。再者，固定間隔的壓痕係、由切割線 所形成，而此壓痕亦可用來避免線的非所欲橫移。 與線的初始接觸可在線未移動下達成。在線與矽塊接 觸且使線彎曲後，線即開始以低速（一般為〇 5米/秒至 2.0米/秒）移動以開始進行切割。經過一段時間後，施加 研磨漿。該段時間一般可為3秒至長達4〇秒，較佳為5 衫至30衫，更佳為5至15秒。亦可在較長的一段無研 磨漿期間進行切割，然而這樣可能無法改善切割結果且 可能造成更多的斷線機會。亦可在一開始切割時即施加 研磨漿，這樣會有大約5公分的乾燥線先進行切割，然 後渔的切割線才進入矽塊。在此例令，乾燥切割期間低 於1秒。 與線的初始接觸亦可在乾燥線移動（一般以〇5米/秒 10 201134634 至2.0米/秒的速度）下達成。然後施加磨漿，一般在3秒 至40秒之後’較佳為5秒至3〇秒之後，更佳為5至15 秒之後。亦可在較長的一段期間進行切割，然而這樣可 能無法改善切割結果且可能造成更多的斷線機會。 在研磨漿已被導入切割線上後，切割線可加速至一切 割速度（例如’由14至1 8米/秒）。 範例1 在具有導引間隔660毫米及張力為25牛頓的一 12〇μΐηΦ線的切割中，在線彎曲前，線的伸長為1.〇53%。 2.5毫米的彎曲會使導引之間的線的長度增至66〇〇25 毫米。有效的額外伸長量為i 〇57%(假設在導引滾輪上無 滑動）。在導引滾輪間的線區域中所生成的線張力上升至 25.1牛頓。由每一線對矽塊所施加的生成力約為〇5牛 頓。（磨擦係數的大小將決定使線移出其必需的均勻間隔 位置所需的力）》 範例2 在一類似切割中，若線之贊曲為5毫米，則線伸長 1.068%，如此提供生成線張力為25 4牛頓，及每一線對 矽塊所施加之力約為1 〇牛頓。 線的自由長度係程序中的一重要標準。在目前可得的 切割中，導引滾輪（第i圖中之“a”）間的自由長度為66〇 毫米，其被沖以研磨漿且以切割速度5米/秒進行移動。 201134634 在一預先張緊的線陣列中，當矽塊下移而形成線之彎曲 15時，從一導引滾輪至矽塊（第i圖中之“b”）的距離為 252毫米（未施加研磨漿，或僅施加少量的研磨漿）。 在切割之前，研磨漿被沖至陣列線之「線内」側上（未 啟動導引滾輪）。在一測試期間，溼的切割線並未橫跨矽 塊。因此，矽塊底部及「線外」側之陣列線係乾燥的。 一旦切割線開始以慢速（例如，〇5米/秒）移動時，該陣列 線被弄渔’ 石夕塊與線之間的磨擦力被降低，因此線的 「自由長度」變得較不明顯。 切割動作亦可藉由使用初始均勾間隔的平行壓痕而立 即發生’如此切割線被鎖在其個別的均勻間隔位置處， 因此可避免*均句間隔所導致的種種問題。 使用本發明之方法的好處為可消除latf的發生，或 將其降低至非常低頻率。田 TA 料因此，m控制方式來「關The block is cut into any program of most thin wafers. Wafers of various materials such as tantalum, tantalum carbide, gallium arsenide, and blue quartz can be cut from such material blocks for use in electronic, semiconductor, and photovoltaic applications. In optoelectronic applications, polycrystalline germanium wafers or single crystal germanium wafers are obtained by cutting large blocks. At present, multi-line cutting is used to cut a large number of stone wafers from the block and it is possible to quickly produce high quality thin wafers (<2"2). The grinding mass can carry the grinding grain ’ or the cutting line can have a ground rice granule slurry which can be a solvent such as polyethylene glycol which can carry abrasive particles such as cerium carbide particles. The solvent is carried into the stone block by entering the block at an appropriate angle by an array of parallel lines while the lines are running at a high speed (5-20 m/sec) in the longitudinal direction. The target is to cut with high yield and minimal solvent loss, while 201134634 制成 produces high quality wafers at low cost. The wafer can be cut in a process window defined by the properties of the abrasive particles (such as its size and shape), solvent properties, and cutting parameters. One of the areas of maximum loss is the Regional Area Thickness Fluetuati〇n (LATF). These changes occur during the beginning of the cut and can cause variations in thickness, resulting in unacceptable wafers of varying thickness. The reason for this is that multiple lines are attracted to each other and paired in pairs, which is mainly caused by the surface tension of the solvent used for cutting. Such tension will bring a neighboring line closer, so that they are paired in pairs. This in turn results in a wafer of different thickness on the "cutting in" edge, and in the worst case, a wafer having a thickness of twice the pitch. When the thickness of the wafer and the thickness of the line decrease, the problem is more serious. The force of pulling the line is expressed as ^ = + , where γ is the surface tension of the solvent, and L is the length of the solvent film between the line and the line. The line radius 'R is the curvature of the solvent surface between the lines' d is the center distance between the lines (pitch - 2r), Θ is the wetting angle between the solvent and the line, and α is between the solvent and the line See Figure 5 for an angle determined by the contact point. The present invention confirms that the surface tension of the solvent is an important parameter for controlling the force between the wires 'this surface tension should be reduced to avoid the occurrence of regional thickness variation (LATF). [Invention Summary] 201134634 The present invention provides a method for a process in which a block of material is cut into a plurality of wafers, wherein a parallel run line of a planar array moves relative to the block of material in a direction perpendicular to a plane of the run lines; characterized by: a line of the array Contacting the block of material in a dry state and being pressed to form a contact force ranging from 0.2 to 1.4 Newtons between each line and the block of material, and - making the line dry in a state of 〇.5 to 2 Run at a speed range of 〇米/sec and cut into the material block during the period of 0.075 to 60.0 seconds' before applying the cutting slurry. Preferably, the corners of the material block that first contact the array line are rounded, and the initial contact between the lines and the material block occurs at a rounded edge closest to the array line. Further preferably, the lines within the array are maintained at individual desired locations by frictional forces and by reducing the surface attraction tension between the lines and by the fixed spaced guide indentations formed at the corners of the block of material. In one form, the block of material is pushed against the wire before the line begins to move, causing the lines to bend. In another alternative, the wire runs at an initial speed to make initial contact with the block of material, and when the slurry is applied, the line accelerates to a more than two running speeds to cut through the block of material. Preferably, the initial speed of the cutting line is in the range of 0.5-2.0 m/sec. The inventors have pointed out that the allowable line and material block minimum distance 6 201134634 is 15 cm to make contact with the material block during the initial dry state cutting before adding the cutting slurry. This is equivalent to a minimum of dry cutting time of 15/200 or 0.075 seconds. The cutting line can tolerate up to two minutes of dry cutting and then requires a slurry for cooling. Further preferably, the bending of the cutting line means that the _66 mm line is extended between the fork mm and 7 mm, which corresponds to a force f applied to each line from 0.2 to 1.4 Newton. More specifically, it is preferable that the bending of the cutting line means that a 66 〇 millimeter line is extended between 2.5 mm and 5 mm, which corresponds to a force F applied to each _ line from 0.5 to 1.0 Newton. Preferably, the higher running speed of the cutting line is in the range of 14 〇 18 〇 m / sec. In one form, the cutting line is a general line and the abrasive slurry includes abrasive particles to cut the block of material. The abrasive particles can be tantalum carbide or diamond. In this form, preferably, the solvent is polyethylene glycol (pEG), or 5-1% by weight of the water. In another alternative, the cutting line has been embedded to cut the block of material. The particles 'and grind t are applied for cooling and removing material from the block of material. Grinding #粒 can be a diamond. In this form, it is preferred that the solvent is polyethylene glycol (PEG)' or 5% by weight based on the weight of water. The invention also provides an apparatus for use in the aforementioned inventive procedure. The present invention also provides a wafer produced by the aforementioned inventive procedure or apparatus using the same. 201134634 [Embodiment] As shown in FIG. 1 , an apparatus for cutting a block into a plurality of thin wafers (for photoelectric or other purposes) includes: a parallel guide disposed under the block 12 The rollers 10 and 11 (> the tensioned cutting line 14 are repeatedly moved around the roller, and the space between the lines and the lines arranged in sequence is narrow, thus forming a parallel line of a planar array (or "net"). The cutting wires are guided by the guide rollers 1A and 11 to move around the cutting wire so that the cutting wire can run through the block 12 at a high speed (for example, 14 to 18 meters/second) to cut the block into a plurality of wafers. Purpose: The block moves downward (D) through the array line to cut the stone block into a plurality of wafers. When the cutting line runs at high speed, the slurry must be introduced onto the cutting line to cool the block and remove Scrap. The slurry can carry abrasive particles, or the cutting line can be embedded with abrasive particles. As shown in Figure 1, the stone block moves down through the array line. However, the block can move in the direction of ' The movement is perpendicular to the parallel array lines. As shown in the important figure, a single stone block is about to be cut. "However, it can be judged to be an ultra-L block. For example, on the workbench, there may be four columns" or the two columns of the upper and lower work platforms. There are a total of eight stone blocks. It can also be used to configure the 夕 夕 block. When more than one shi shi block is cut at the same time, this month focuses on avoiding LATF, which can be due to the surface tension between the line and the line. Producing 'and thus causing the majority of the wires to be paired in pairs, resulting in a thick, one? thick continuous wafer, rather than a wafer of uniform thickness." 201134634 can be used to contact the array block 12 prior to introduction of the slurry. The line 14 is formed to bend 15 to avoid or reduce the problems caused by the surface tension of the slurry. This is illustrated by the accompanying drawings, which greatly exaggerate the vertical dimension of the initial bending. The contact system is achieved without moving the cutting line, or the cutting line moves slowly (for example, from 0.5 to 2.0 m/s). As shown in Fig. 2, the block 12 is moved down D to the tensioning line 14 to make the tension T is at a slight angle with respect to the plane formed by the cutting line By forming the bend 15, the vertical component of this force will act on the block (the angle is exaggerated in the figure). Figure 3 shows the vertical component of the decomposition of the force relative to the block. Under the measurement, the increase of the tension of the cutting line is negligible, so the generating force applied to the block by each line is F=2Ty=2T. sin(a). In actual application, the amount of displacement during pre-tensioning and cutting is small. The following describes a possible size example that can be used for the cutting procedure. Figure 4 shows a specific configuration of the lower edge of the block 12. In Figure 4, the left 16 of the block 12 is designated as an "in-line" surface. The bottom is the "cut-in" surface, and the right side of the block is designated as the "out-of-line" surface. The lower corner of the block is between the surfaces 16 and 17 and between the surfaces 17 and 18. Has small rounded corners 2i and 22. These rounded corners may be 45 degrees from adjacent surfaces and may be from 5 mm to 125 mm long (in single crystal blocks, the fillets may be much larger and may even have some degree of curvature). When the block 12 is lowered to form a bend 15 of the line, the line 14 is initially in contact with the fillet 201134634, and the line is indented at 23 and 24 at the time of the line. The cutting line 4 is accelerated and the edge joints under the 21 and 22 are applied. These indentations can be used to guide the cutting line 14 after the slurry is applied and moved at a low speed to produce evenly spaced upper slurry in the lower edge. As previously mentioned, the LATF can be avoided or reduced by bending the array lines and by starting the cutting in the dry state. Increasing the contact force between the lines (4) allows the array lines to bend. This increases the friction between the wire and the block. The initial cutting is performed without applying a slurry to ensure high friction. Further, an undesired line pairing phenomenon due to the surface tension effect of the wet slurry can be lowered by starting cutting in a dry state. When the cutting line is affected by the contact force of the block, the line pairing effect will be reduced. Furthermore, the fixed interval indentation is formed by a cutting line which can also be used to avoid undesired traverse of the line. The initial contact with the line can be achieved without moving online. After the wire is in contact with the block and the wire is bent, the line begins to move at a low speed (typically 〇 5 m/s to 2.0 m/s) to begin cutting. After a while, the slurry is applied. The period of time may generally range from 3 seconds up to 4 seconds, preferably from 5 to 30 shirts, more preferably from 5 to 15 seconds. It can also be cut during a longer period of refining. However, this may not improve the cutting results and may result in more chances of disconnection. It is also possible to apply the slurry at the beginning of the cutting, so that a drying line of about 5 cm is cut first, and then the cutting line of the fish enters the block. In this case, the drying cut is less than 1 second. The initial contact with the wire can also be achieved with the drying line moving (typically at a speed of 〇5 m/sec 10 201134634 to 2.0 m/s). The refining is then applied, typically after 3 seconds to 40 seconds, preferably after 5 seconds to 3 seconds, more preferably after 5 to 15 seconds. Cutting can also be done over a longer period of time, however this may not improve the cutting results and may result in more chances of disconnection. After the slurry has been introduced into the cutting line, the cutting line can be accelerated to any cutting speed (e.g., 'from 14 to 18 m/sec). Example 1 In a cut having a 12 〇 μΐηΦ line with a guiding interval of 660 mm and a tension of 25 Newtons, the line elongation was 1. 〇 53% before bending. A 2.5 mm bend increases the length of the wire between the guides to 66 〇〇 25 mm. The effective extra elongation is i 〇 57% (assuming no slip on the guide roller). The line tension generated in the line area between the guide rollers rises to 25.1 Newtons. The generated force applied by each line to the block is approximately 牛5 Newtons. (The size of the friction coefficient will determine the force required to move the wire out of its necessary evenly spaced position.) Example 2 In a similar cut, if the line has a curvature of 5 mm, the line is elongated by 1.068%, thus providing a line tension. For 25 4 Newtons, and the force applied to each block is about 1 Newton. The free length of the line is an important criterion in the program. In the currently available cutting, the free length between the guide rollers ("a" in Fig. i) is 66 mm, which is washed with a slurry and moved at a cutting speed of 5 m/sec. 201134634 In a pre-tensioned line array, when the slab is moved down to form a bend 15 of the line, the distance from a guide roller to the 矽 block ("b" in the figure i) is 252 mm (not applied) Grind the slurry, or apply only a small amount of slurry). Prior to cutting, the slurry is flushed onto the "in-line" side of the array line (the guide rollers are not activated). The wet cut line did not cross the block during a test. Therefore, the array lines at the bottom of the block and on the "out of line" side are dry. Once the cutting line starts moving at a slow speed (for example, 〇5 m/s), the array line is caught. The friction between the stone blocks and the line is reduced, so the "free length" of the line becomes less. obvious. The cutting action can also occur immediately by using the parallel indentations of the initial uniform spacing. Thus, the cutting lines are locked at their respective evenly spaced positions, thereby avoiding the problems caused by the * uniform interval. The benefit of using the method of the invention is that the occurrence of laft can be eliminated or reduced to very low frequencies. Tian TA, therefore, m control method to "off"
閉」LATF現象。 W 【圖式簡單說明】 本發明之具體實施例將 加以教述，其中：“貫例的方式並參照所附圖 第1圖為正要被切割 ® ^^ , 战夕日日圓的一矽塊的概略側;Close the LATF phenomenon. W [Brief Description of the Drawings] A specific embodiment of the present invention will be described, wherein: "The method of the example and the drawing of Fig. 1 of the drawing are the ones to be cut ® ^^, the day of the sunday Rough side
圖其顯不如何藉由I 線接觸矽塊下表面處使切； 12 201134634 線彎曲，來施加一初始力； 第2圖為顯示切割線之張力方向的〜 第3圖為另一示意圖，其顯示在—:意圖； * 备 JL>L· 距離下，該張力的分解的垂直分量；及 的發塊偏移 第4圖為一說明圖例，其顯示如何形塑石夕塊下角落及 如何在該矽塊中製成初始壓痕。 第5圖為一說明圖例，其顯示平行線間之力。 【主要元件符號說明】 1〇 導引滾輪 11 導引滾輪 12 矽塊 14 切割線 15 彎曲 16 矽塊之左側 17 @塊之底部 18 矽塊之右側 21 圓角 22 圓角 23 壓痕 24 壓痕 13The figure shows how to cut by the I line contacting the lower surface of the block; 12 201134634 line bending to apply an initial force; Fig. 2 is a view showing the tension direction of the cutting line ~ Fig. 3 is another schematic view Displayed in -: intent; * prepared JL> L · distance, the vertical component of the decomposition of the tension; and the block offset 4 is a legend, showing how to shape the lower corner of the stone block and how to An initial indentation is made in the block. Figure 5 is an illustration showing the force between parallel lines. [Main component symbol description] 1〇 Guide roller 11 Guide roller 12 矽 Block 14 Cutting line 15 Bending 16 Left side of the block 17 @Bottom of the block 18 Right side of the block 21 Rounded corner 22 Rounded corner 23 Indentation 24 Indentation 13