201133878 jzou^iwf.doc/n 六、發明說明： 【發明所屬之技術4員域】 種光二=陽能^特別是有關於一 千蚁佳的缚膜太陽能電池。 【先前技術】 因此人們近年人們騎健要性_知提高， 關技術，極研發替代能源與再生能源的相 源與環多的替代能 矚目。主I历κι曰丄 Λ太喊此電池（solar cell)最受 能，且發電過直接將太陽能轉換成電 質，不會對環境造成^ 减碳錢化物等有害物 序全池通常是於-基板上依 外側照射至_太1；^=換層从電極層。當光線由 產生自由電子&電轉換層適於受光能而 電子與電洞會:：兩 電路或二電路或電子裝置’便可提供電能而使 6〜二右現:=以池的光電轉換效率平均約在 率上仍有其所面池的光電轉換效 ^因此，如何才能提升薄臈太陽 201133878 jz jzj〇3twf.doc/n 能電池的光電轉換效率—直都是 7萄目的課題。 【發明内容】 本發明提供―種軸太_電池， 用率，而可提升薄膜太陽能電池 魅了提焉光束的利 本發明提出一種薄膜太陽能電池電率。 板、一第一透明導電層、—光伏層^其包括一透明基 及一光反射結構。透明基板具有_!井〜弟二透明導電層以 入射面的光出射面。第—透明導電層與—相對於光 出射面上。光伏層配置於第— 恭；透明基板的光 於光伏層上。光反射結構導 J束2序通過透明基板、第一透日;中，且 t射光束中波長範圍實質上==^;至而=，構會 的至少部分光束。 、、至丨1〇〇奈米之間 宰化^發=之一實施例中’上述之光反射結構包括-S 木化、、-。構。圖案化結構具有 再匕括圖 圖案結構。莖—工同安弟子圖案、纟°構與一第二子 二子F1査从弟+圖案、、。構配置於第二透明導電芦上，坌 ::圖案結構配置於第一子圖案 曰士第 結構至少部分重疊。 私且與第-子圖案 在本發明之一實施例中，上安 ^直條狀、條狀、橫條狀、=形狀包 赛克形狀。 于狀曼形狀、蜂窩狀或馬 5 201133878 n J2^Ujtwf.doc/n 二透？實觸之第-子圖案結構與第 一e)。θ接觸的一表面為-凹凸結構(一 盘第一實施例中’上述之第二子圖案結構至少 圖木、、告構接觸的一表面為一凹凸結構。 射結：發以=1為；r结構為-光反 部分==;=中'上述之光反射結構層整面或 選自c 一實ϊ例中’上述之光反射結構的材質是 組成之物質群中選擇的一種或多種物質。*機材枓所 筑、m—實施例中’上述之金屬是選自由紹、 鍅、銳：、：、:孟、：7、錄、鋼、鋅、鎵、鍺、紀、 亂、铪、纽、t 、録、銦、锡、録、鑭、 金所構成之族群1鍊、鐵、銀、銘、金、銳、錯以及其合 銦、括氧化 f化鎂L氮_、氧灿、 錫酸録(Cd2Sn04)、摻銅的錫锡·0錫、 或接氟的氧化亞錫。 &祕蝴S— 201133878 J〇3twf.dOC/n 中，上述之有機㈣包括染料 近紅例中，上述之部分光束包括紅光、 膜、j本發明之—實施例中，上述之光伏層為一 IV族薄 ㈣=·ν族化合物半導體薄膜、一ΙΙΛα族化合物半導 /寻膝或—有機化合物半導體薄膜。 在本發明之—實_巾，上叙Ιν㈣膜包括有201133878 jzou^iwf.doc/n VI. Description of the invention: [Technology 4 member field of invention] Seed light 2 = yang energy ^ Especially for the bonded solar cell with a thousand ants. [Prior Art] Therefore, in recent years, people have been riding on the importance of health, knowing the technology, and researching the alternative sources of energy and renewable energy. The main I calendar κι曰丄Λ yells that the solar cell is the most energy-intensive, and the power generation directly converts the solar energy into electricity, which does not cause harm to the environment. The carbon dioxide and other harmful substances are usually in the pool. The substrate is irradiated to the outside of the substrate to _ too 1; ^ = the layer is changed from the electrode layer. When the light is generated by the free electron & electrical conversion layer is suitable for receiving light energy and the electron and hole will be: two circuits or two circuits or electronic devices can provide power and make 6~2 right: = photoelectric conversion in the pool The average efficiency is still about the photoelectric conversion effect of the cell in the surface. Therefore, how to improve the photoelectric conversion efficiency of the battery can be improved by the solar cell 201133878 jz jzj〇3twf.doc/n. SUMMARY OF THE INVENTION The present invention provides a thin-film solar cell electrical power rate, which can improve the thin-film solar cell. The board, a first transparent conductive layer, and a photovoltaic layer comprise a transparent base and a light reflecting structure. The transparent substrate has a light-emitting surface of the incident surface of the transparent conductive layer. The first transparent conductive layer and - are opposite to the light exit surface. The photovoltaic layer is disposed on the first layer; the transparent substrate is on the photovoltaic layer. The light reflecting structure guides the J beam 2 through the transparent substrate, the first through-day; and the wavelength range of the t-beam is substantially ==^; to =, at least part of the beam. Between 1 and 〇〇 = = ======================================================== Structure. The patterned structure has a pattern structure. Stem - Gong Tong's disciple pattern, 纟 ° structure and a second son, two sons F1 check the brother + pattern, and. The structure is disposed on the second transparent conductive reed, and the 坌::pattern structure is disposed on the first sub-pattern. The gentleman structure at least partially overlaps. Private and first-sub-pattern In one embodiment of the invention, the upper-strip, strip-like, cross-bar, and shape-shaped Sike shape. In the shape of a man, a honeycomb or a horse 5 201133878 n J2^Ujtwf.doc/n Two transparent? The first-sub-pattern structure of the real touch and the first e). A surface of the θ contact is a concave-convex structure (in the first embodiment, the second sub-pattern structure is at least shown in the first embodiment, and a surface of the contact is a concave-convex structure. The shot is: =1; r structure is - light reverse part ==; = medium 'the above light reflection structure layer whole surface or selected from c. The actual light reflection structure of the material is one or more substances selected from the group of substances * The machine is built, m - in the example, the above metal is selected from the group consisting of Shao, 鍅, 锐:, :,: Meng,: 7, recorded, steel, zinc, gallium, sputum, sin, chaos, sputum, New Zealand, t, recorded, indium, tin, recorded, sputum, gold, the group of 1 chain, iron, silver, Ming, gold, sharp, wrong and its indium, including oxidized magnesium, L nitrogen, oxygen, Sodium citrate (Cd2Sn04), copper-doped tin-tin-t-tin, or fluorinated stannous oxide. & secret butterfly S-201133878 J〇3twf.dOC/n, the above organic (four) includes dye near red The partial light beam includes red light, film, and the present invention. In the embodiment, the photovoltaic layer is a group IV thin (four)=·ν group compound semiconductor film, a stack ΙΛα compound semiconducting / knee-seeking or - organic compound semiconductor film. In the present invention - the actual _ towel, the upper Ι ν (four) film includes
Iv yrSl、a'SiGe、，SiGe、a_SiC、㈣iC、堆疊式（tandem) 矢溥膜或三層（triple) IV族薄膜至少其一。 薄膜之—實施例中，上述之III-V族化合物半導體 寻膜包括有砷化鎵（GaAs)或磷化銦鎵（InGap)。 之—實關巾’上述之II_VI魏合物半導 包括有銅銦石西（CIS)、銅銦鎵石西（CIGS)、録化 婦（CdTe)或其組合。 明之—實施例中’上述之有機化合物半導體薄 太 j 烧嗟吩（P〇ly (3_hexylthi〇Phene)，P3HT)與 不米碳球（PCBM)混合物。 . ^、 板。在本發日狀—實_巾，上叙透明基板為玻璃基 基於上述，本發明於第二透明導電層上 = 池中被反射的機會，= 3 光路徑’進而增加光束被光伏層吸收 的機冒’而產錄多的電子電崎。換言之，採用光反射 201133878 jz ^zjujiwf.doc/n 結構的薄社陽能電池可有效地提高 提升其光電轉換效率。 束的利用率，進而 為讓本發明之上述特徵和優點· 舉實施例，並配合所附圖式作詳細朗如 ’下文特 【實施方式】 圖1為本發明之一實施例之一種薄膜 面示意圖。請參考圖1，在本實施例==剖 腿包括-透明基板110、一第一透==月匕電池 伏層130、一第二透明導電層14〇以 电層120、—光 透明基板m具有—光人裝ma 的光出射面U〇b，其中透明基板110例如是亡 二第一透明導電層12崎於透明基板110的光 上：：光伏層130配置於第-透明導電層m 上苐一透明¥笔層140配置於光伏層130上。光反射辞 構150配置於第二透明導電層14〇上，其中一光束u = 由光入射面ll〇a進入薄膜太陽能電池1〇〇a中，且光束= 在依序通過透明基板11G、第—透明導電層m、光伏層 130以及第二透明導電層14G之後傳遞至歧射結構⑼曰， 而光反射結構150會反射光束L1中波長範圍實質上介於 6〇〇奈米至Π00奈米之間的至少部分光束[2。 一般來說’第一透明導電層120與第二透明導電層14〇 的材質皆可採用銦錫氧化物(indium如oxide，IT0)、銦鋅 氧化物(indium zinc oxide, IZO)、銦錫鋅氧化物(indium tin 03twf.doc/n 201133878 zinc oxide, ΙΤΖΟ)、氧化鋅（zinc oxide)、I呂錫氧化物 (aluminum tin oxide，ΑΤΟ)、！呂鋅氧化物（aluminum zinc oxide, AZO)、錫銦氧化物(cadmium indium oxide, CIO)、編 辞氧化物(cadmium zinc oxide，CZO)、鎵鋅氧化物(gz〇)及 錫鼠氧化物(FTO)之類的透明導電材料，或是上述的組合。At least one of Iv yrSl, a'SiGe, SiGe, a_SiC, (iv) iC, tandem sagittal film or triple IV film. In the film-embodiment, the III-V compound semiconductor film formation includes gallium arsenide (GaAs) or indium gallium phosphide (InGap). - The solid cover towel The above-mentioned II_VI derivative semi-conducting includes copper indium lithite (CIS), copper indium gallium (CIGS), CdTe or a combination thereof. In the examples - the organic compound semiconductor described above is a mixture of P〇ly (3_hexylthi〇Phene, P3HT) and a non-carbon sphere (PCBM). ^, board. In the present invention, the transparent substrate is a glass based on the above, the present invention is on the second transparent conductive layer = the opportunity to be reflected in the cell, = 3 light path 'and thereby increase the absorption of the light beam by the photovoltaic layer The machine is escaping and the electronic electronics are produced. In other words, the thin-sheyang solar cell with light reflection 201133878 jz ^zjujiwf.doc/n structure can effectively improve its photoelectric conversion efficiency. The above-mentioned features and advantages of the present invention will be described in detail with reference to the accompanying drawings. FIG. 1 is a film surface according to an embodiment of the present invention. schematic diagram. Referring to FIG. 1 , in this embodiment, the == leg includes a transparent substrate 110, a first transparent == 匕 匕 battery volt layer 130, a second transparent conductive layer 〇, an electric layer 120, and a transparent substrate m. The light emitting surface U 〇 b of the light-emitting person ma, wherein the transparent substrate 110 is, for example, the light of the first transparent conductive layer 12 on the transparent substrate 110: the photovoltaic layer 130 is disposed on the first transparent conductive layer m A transparent transparent pen layer 140 is disposed on the photovoltaic layer 130. The light reflection structure 150 is disposed on the second transparent conductive layer 14〇, wherein a light beam u = enters the thin film solar cell 1〇〇a from the light incident surface 11〇a, and the light beam= sequentially passes through the transparent substrate 11G, The transparent conductive layer m, the photovoltaic layer 130 and the second transparent conductive layer 14G are then transferred to the framing structure (9) 曰, and the light reflecting structure 150 reflects the wavelength range of the light beam L1 substantially from 6 〇〇 nanometer to Π00 nm. At least part of the beam between [2. Generally, the materials of the first transparent conductive layer 120 and the second transparent conductive layer 14A can be indium tin oxide (indium such as oxide, IT0), indium zinc oxide (IZO), indium tin zinc. Oxide (indium tin 03twf.doc/n 201133878 zinc oxide, ΙΤΖΟ), zinc oxide, aluminum tin oxide (ΑΤΟ),! Aluminum zinc oxide (AZO), cadmium indium oxide (CIO), cadmium zinc oxide (CZO), gallium zinc oxide (gz〇), and tin-rat oxide ( A transparent conductive material such as FTO) or a combination of the above.
光伏層13〇可以是一 IV族薄膜、一Πΐ_ν族化合物半 導體薄膜、一 II-VI族化合物半導體薄膜或一有機化合物 半導體薄膜。詳細而言’ IV族薄膜例如是包含有a_si、 pc-Si、、a-SiGe、pc-SiGe、a-SiC、gc-SiC、堆疊式（tandem ) IV族薄膜(如：堆疊式矽薄膜)或三層（triple) IV族薄膜 (如：三層矽薄膜）至少其一 ΰΙΠ_ν族化合物半導體薄膜 例如是包含有砷化鎵（GaAS)、磷化銦鎵（InGap)或其 、、且ό II νι紅化合物半導體薄膜例如是包含有銅銦石西 (CIS)、銅銦鎵硒（CIGS)、鎘化碲（CdTe)或其組合。 有機化合物半導體薄膜例如是包含有3_己烧嗟吩⑽y 3 hexylthiQPhene)，P3HT)與奈米碳球（pCBM)混合 物。 膜太薄膜太陽能電池施可以是採用非晶石夕薄 ====電r疊式(一 -薄膜太陽能電池 之薄膜太陽能電池，也==二’二： 201133878 vw *wf.doc/n 述僅為舉例說明，並不以此為限。The photovoltaic layer 13A may be a Group IV film, a ?? family compound semiconductor film, an II-VI compound semiconductor film or an organic compound semiconductor film. In detail, the 'IV group thin film includes, for example, a_si, pc-Si, a-SiGe, pc-SiGe, a-SiC, gc-SiC, and a tandem type IV film (eg, a stacked germanium film). Or a triple-layer IV film (eg, a three-layer germanium film), at least one of the germanium-based compound semiconductor films including, for example, gallium arsenide (GaAS), indium gallium phosphide (InGap), or The νι red compound semiconductor film contains, for example, copper indium sulphate (CIS), copper indium gallium selenide (CIGS), cadmium cadmium (CdTe), or a combination thereof. The organic compound semiconductor thin film contains, for example, a mixture of 3-hexene porphyrin (10) y 3 hexylthiQPhene), P3HT) and a nanocarbon sphere (pCBM). Membrane too thin film solar cell can be used amorphous silicon thin thin ==== electric r stacked (a thin film solar cell thin film solar cell, also == two 'two: 201133878 vw *wf.doc/n For the sake of illustration, it is not limited to this.
如圖1所示’本實施例之光反射結構15〇例如是一圖 案化結構150a，其中圖案化結構i5〇a具有一第—子圖案 結構152與一第二子圖案結構154。第一子圖案結構j二 配置於第二透明導電層140上，而第二子圖案結構154配 置於第一子圖案結構152上，且第二子圖案結構154與第 一子圖案結構152至少部分重疊。意即第二子圖案結構/'154 僅部分重疊於第-子圖案結構152上，換言之，有。部分的 第一子圖案結構154是配置於第二透明導電層“ο上。 具體而言，光束L1經由透明基板11〇的光入射面ιι〇& 進入薄膜太陽能電池1，時，光束L1會依序通過透明基 板110、第一透明導電層120與光伏層130，豆中 ς 光伏層13〇吸收的光束L1會再通過第二透明導二:〇 而傳遞至圖案化結構150a。此時，圖案化結構l5〇a曰 第一子圖案結構152與第二子圖案結才冓154可反 中的部分光束L2至光伏層130,其中此部分光As shown in Fig. 1, the light reflecting structure 15 of the present embodiment is, for example, a patterned structure 150a, wherein the patterned structure i5〇a has a first sub-pattern structure 152 and a second sub-pattern structure 154. The first sub-pattern structure j is disposed on the second transparent conductive layer 140, and the second sub-pattern structure 154 is disposed on the first sub-pattern structure 152, and the second sub-pattern structure 154 and the first sub-pattern structure 152 are at least partially overlapping. That is, the second sub-pattern structure / '154 is only partially overlapped on the first-sub-pattern structure 152, in other words, there is. A portion of the first sub-pattern structure 154 is disposed on the second transparent conductive layer ο. Specifically, when the light beam L1 enters the thin film solar cell 1 via the light incident surface of the transparent substrate 11 , the light beam L1 The light beam L1 absorbed by the transparent layer 110, the first transparent conductive layer 120 and the photovoltaic layer 130, and the photovoltaic layer 13 of the bean layer is sequentially transmitted to the patterned structure 150a through the second transparent conductive layer: 〇. The patterned structure l5〇a曰 the first sub-pattern structure 152 and the second sub-pattern junction 154 are opposite to the partial light beam L2 to the photovoltaic layer 130, wherein the partial light
J範=質上介於_奈米至11〇〇奈米之間。在本實施; 中’光束L2例如是紅光、近紅外光與遠紅外光。、 換言之，透過第一子圖案結構152盥第二 154的堆料構可影束L1的倾料，使 =匕結構150a與第二透明導電層14〇的界 =。因此’圖案化結構i5〇a可增加光束 險月匕電池100a中被反射的機會’而提 、 層130的光路徑，進而择加本φ、士 <過光伏 的九路仏進私加先束被光伏層m吸收的機會。 10 201133878^ -»·ί—O3twf.d〇c/n 如此’薄缸太陽能電池l〇〇a便可有效利用及吸收光束Ll , 並將其轉換成電能’而具有較高的光電轉換效率。 在本實施例中，可透過改變圖案化結構150a的形狀 或採用不同種類的材質來形成光反射結構15〇，藉以達到 反射波長範圍實質上介於600奈米至1100奈米之間的光束 L2。詳細而言，本實施例之圖案化結構15〇a的形狀例如 是由第一子圖案結構152與第二子圖案結構154垂直相交 所形成之格子形狀，請參考圖2A ;或者，由第一子圖案結 ® 構152與第二子圖案結構154沿著一角度相交所形成之菱 形狀，請參考圖;或者，由第一子圖案結構152與第二 子圖案結構154平行排列且部分重疊所形成之直條狀（請 參考圖2C)、規則或不規則的條狀（未繪示）或橫條狀（未 繪示）；或者，由第一子圖案結構152與第二子圖案結構 154的結構呈現規則或非規則排列所形成之馬賽克形狀 (請參考圖2D)或蜂窩狀（未繪示）。換言之，此第一子 圖案結構152與第二子圖案結構154的排列方式與結構可 φ 依使用者的需求而作調整，上述僅為舉例說明，非限於此。 另外，光反射結構150的材質可以是選自由一白漆、 一金屬、一金屬氧化物以及一有機材料所組成之物質群中 選擇的一種或多種物質。其中，金屬是選自由鋁、銃、鈦、 •釩、鉻、猛、鐵、钻、鎳、銅、鋅、鎵、鍺、纪、錯、銳、 鉬、鉻、釕、铑、鈀、銀、鎘、銦、錫、銻、鑭、釓、姶、 钽、鎢、鍊、锇、銥、鉑、金、鉈、鉛以及其合金所構成 之族群。而金屬氧化物可以是選擇氧化銦、氧化錫(如 11 201133878 二z ^zjujiwf.doc/n :烹:上化:夕、严化鎂、氧化鈕、氧化鈦、氧化鎂、氧J Fan = qualitatively between _ nanometer to 11 〇〇 nanometer. In the present embodiment, the 'light beam L2' is, for example, red light, near-infrared light, and far-infrared light. In other words, the stacking of the first sub-pattern structure 152 盥 the second 154 can shift the beam L1 so that the boundary of the 匕 structure 150a and the second transparent conductive layer 14 =. Therefore, the 'patterned structure i5〇a can increase the chance of being reflected by the beam in the solar cell 100a', and the light path of the layer 130, and then the addition of the φ, 士< The opportunity for the beam to be absorbed by the photovoltaic layer m. 10 201133878^ -»·ί—O3twf.d〇c/n Thus, the thin-thick solar cell l〇〇a can effectively utilize and absorb the light beam L1 and convert it into electric energy' with high photoelectric conversion efficiency. In this embodiment, the light reflecting structure 15 形成 can be formed by changing the shape of the patterned structure 150 a or using different kinds of materials, thereby achieving a light beam L2 having a reflection wavelength range substantially between 600 nm and 1100 nm. . In detail, the shape of the patterned structure 15〇a of the embodiment is, for example, a lattice shape formed by the first sub-pattern structure 152 and the second sub-pattern structure 154 intersecting perpendicularly, please refer to FIG. 2A; or, by the first Referring to the figure, the sub-pattern structure 152 and the second sub-pattern structure 154 intersect at an angle, or the first sub-pattern structure 152 and the second sub-pattern structure 154 are arranged in parallel and partially overlapped. Straight strips formed (please refer to FIG. 2C), regular or irregular strips (not shown) or strips (not shown); or, by the first sub-pattern structure 152 and the second sub-pattern structure 154 The structure of the mosaic is formed by a regular or irregular arrangement of mosaic shapes (please refer to FIG. 2D) or honeycomb (not shown). In other words, the arrangement and structure of the first sub-pattern structure 152 and the second sub-pattern structure 154 can be adjusted according to the needs of the user. The foregoing is merely illustrative and not limited thereto. In addition, the material of the light reflecting structure 150 may be one or more selected from the group consisting of a white paint, a metal, a metal oxide, and an organic material. Wherein the metal is selected from the group consisting of aluminum, tantalum, titanium, vanadium, chromium, lanthanum, iron, diamond, nickel, copper, zinc, gallium, lanthanum, yttrium, yttrium, lanthanum, lanthanum, lanthanum, cerium, palladium, silver Groups of cadmium, indium, tin, antimony, bismuth, antimony, bismuth, antimony, tungsten, chain, bismuth, antimony, platinum, gold, antimony, lead and alloys thereof. The metal oxide can be selected from indium oxide and tin oxide (eg 11 201133878 two z ^zjujiwf.doc/n: cooking: upper: eve, severe magnesium, oxidation button, titanium oxide, magnesium oxide, oxygen
SnO口4、Ί、氧化銘、氧化給、氧化銦錫、錫酸録(Cd2 ' ^^^^(stannicoxide)^#^^ =。，機射村岐_咖)或是誠(Pigment)。 於一未繪示的實施例中，圖案化結構亦可是由 弟：ί合物材料與多個第二聚合物材料之交替排列所 之Λ 5層，其中第一聚合物材料例如是羥基乙酸化聚 ^苯二曱酸乙二§旨或經基乙酸化聚對苯二甲酸乙二醋之共 聚物’而第二聚合物材料例如是聚萘二甲酸乙二S旨或聚蔡 了甲酸乙一酯之共聚物。上述材料僅為舉例說明，只要所 ㈣之光反射結構15G的材質至少能反射光波波長範圍介 於600奈米至11⑻奈米之間的光束，皆屬本發明所欲保護 之範圍 以下以多個不同實施例來說明薄膜太陽能電池10〇b 〜100f之设什。在此必須說明的是，下述實施例沿用前述 貫施例的兀件標號與部分内容，其中採用相同的標號來表 示相同或近似的元件，並且省略了相同技術内容的說明。 關於省略部分的說明可參考前述實施例，下述實施例不再 重複贅述。 圖3為本發明另一實施例之—種薄膜太陽能電池的剖 面示意圖。請同時參考圖1與圖3，本實施例之薄膜太陽 能電池100b與圖1之薄膜太陽能電池1〇〇a類似，兩者的 差異在於··本實施例之光反射結構15〇為一圖案化結構 15〇b，其中圖案化結構150b的第一子圖案結構152a與第 201133878 52 325〇3twf.doc/n 二透明導電層140接觸的一表面例如是一凹凸結構15%。 詳細來說，本實施例之圖案化結構15〇b整面覆蓋第二透明 導電層140’而第一子圖案結構152a與第二透明導電層“ο 接觸的表面為凹凸結構153a，其中此凹凸結構153a例如 疋开》成於第一子圖案結構152a表面上的表面微結構。當 然，於其他未繪示的實施例中’凹凸結構I53a亦可以是形 成於苐二透明導電層140表面上之表面微結構。 由於圖案化結構150b與第二透明導電層14〇接觸的 表面為凹凸結構153a，因此，當光束L1傳遞至此凹凸結 構153a時’光束L1便容易被此凹凸結構153a反射並散射 反射後的光束L2，而可提高通過光伏層130之光束L2的 光路徑，進而增加光束L2被光伏層no吸收的機會，而 可提升整體的光電轉換效率。此外，光束L1中光波波長 範圍介於600奈米至1100奈米之間的光束L2可直接被圖 案化結構150b反射至光伏層130。換言之，圖案化結構15〇b 的第一子圖案結構15 2 a與第二子圖案結構丨5 4可影響光束 L1的行徑方向，使光束L1在第一子圖案結構152a與第二 透明導電層140接觸的表面上產生反射並散射反射的現 象，或者，透過第二子圖案結構154而產生反射現象。如 此來’可增加光束L1在薄膜太陽能電池1〇〇b中的被反 射的機會，以提咼光束L1通過光伏層13〇的光路徑，進 =增加光束L1被光伏層13〇吸收的機會，而產生較多的 ^子電洞對。換言之，薄膜太陽能電池丨⑻Η有效提高光 束L1的利用率，進而提升其光電轉換效率。 201133878 jz. j>^jujiwf.doc/n 圖4為發明之另-實施例之一種薄膜太陽能電池 面示意圖。請同時參考圖3與圖4，本實施例之 ‘ 能電池動與圖3之薄膜太陽能電池臟類似，兩^ 差異在於：本實施例之第二子圖案結構154&與第—子室 結構152接觸的一表面為一凹凸結構15补，其中此凹二二 構153b例如是形成於第二子圖案結構15如表面上的= 微結構。當然，於其他未奢示的實施例中，凹凸結構 亦可以是形成於第-子圖案結構152表面上之表面微^ 構。 σ 圖5為發明之另-實施例之一種薄膜太陽能電池 面示意圖。請同時參相3與圖5，本實施例之薄陽 能電池圆與圖3之薄膜太陽能電池1〇%類似，兩者^ ^異在於：本實施例之第―子隨結構咖與第二透明導 电層140接觸的-表面例如是—凹凸結構咖，而第 ^案結構154b與第一子圖案結構⑽接 ^凸結構⑽。其中，凹凸結構⑽例 ^ ^ 表面上的表面微結構，而凹凸怎^ 未緣示的實施例中，凹凸結構咖亦可 凹=構、一透明導電層140表面上之表面微結構，而 上面微結構、可以是形成㈣—子圖餘構⑽表面 〜15= t必于兄明的是’本發明並不限定圖案化結構150a 形L雖然此處所提及的圖案化結構Μ如〜 14 201133878 jz jzj〇3twf.doc/n 具體化為具有第-子圖案結構152、152a、152b與第二+ ，案結構154、i54a、⑽’意即圖案化結構15〇:〜“ 疋由兩層子@紐構所喊，但已知的其他能達到同等反 射光波波，範圍介於_奈米至測奈米之間的光束之設 。十例如是圖案化結構僅為一層連續結構層、— 結構層、多騎_構層或錢Μ不連續結構層不 =本發明可糾的技術方案’不脫離本發賴欲保護的範 面干S為實施例之—種薄膜太陽能電池的剖 面不思圖。_時參相丨與圖6，本實補 ^也職與圖1之薄膜太陽能電池咖類似，兩3 =且光反射結構職為一體成型，其中光反二: 二—5〇e整面覆蓋第二透明導電層刚，用以增加 在溥膜太陽能電池職中的被反射的機會，以提高束 1通過光伏層13G的光路徑，進而增加光束u被光伏芦 吸收的機會，而產生較多的電子電桐對。換二 ，陽能電池職可有效提高光束L1的利用率:: 升其光電轉換效率。 +進而提 值得一提的是，本發明並不限定光 的形態，軸㈣顺及的歧射賴/51=層化= =第二透明導電層140’但已知的其他能達 射先波波長範圍介於_奈米至11Q()奈米 =寺反 計’例如是反射結_15Ge僅部錢蓋第; 15 201133878 jz,jvjiwf.doc/n 不脫離本發明所欲 140’仍屬於本發明可採用的技術方， 保護的範圍。 〃 m / 面示意圖。請同時參考圖6盘種陽此電池的剖 能電池賺盘圖6之賓胺女^圖t本貫施例之薄膜太陽 層⑽接觸的一===;=二透明導電 是形成於光反射結構;構 構β田然’於其他未繪示的實施例令，凹凸結構15^亦可 以疋y於第二透明導電層刚表面上之表面微結構。 4上所述，本發懈第二透料電層上配置光反射結 =增加縣㈣社陽能電池巾被反射的機會，可提 通過紐層的紐徑，誠增加光倾光伏層吸收 社Μ生較多的電子電簡。齡之，制光反射 :'専膜太陽能電池可有效地提高光束的利用率，進而 θ升其光電轉換效率。此外，凹凸結構的設計亦可使光束 身^並放射反射至光伏層，可提高通過光伏層之光束的光 路I進而增加光束被光伏層吸收的機會，而提升整體的 光電轉換效率。 义雖然本發明已以實施例揭露如上，然其並非用以限定 本^明，任何所屬技術領域中具有通常知識者，在不脫離 ^發明之精神和範圍内，當可作些許之更動與潤飾，故本 發明之保護範圍當視後社f請專利範麟界定者為準。 16 201133878 όζ ^ZD〇3twf.doc/n 【圖式簡單說明】 圖1為本發明之一實施例之一種薄膜太陽能電池的剖 面示意圖。 圖2A至圖2D為多種不同實施例之光反射結構的俯 視示意圖。 圖3為發明之另一實施例之一種薄膜太陽能電池的剖 面示意圖。 圖4為發明之另一實施例之一種薄膜太陽能電池的剖 面示意圖。 圖5為發明之另一實施例之一種薄膜太陽能電池的剖 面示意圖。 圖6為發明之另一實施例之一種薄膜太陽能電池的剖 面示意圖。 圖7為發明之另一實施例之一種薄膜太陽能電池的剖 面示意圖。 【主要元件符號說明】 100a〜100f:薄膜太陽能電池 110 :透明基板 110a :光入射面 ll〇b :光出射面 120 :第一透明導電層 130 :光伏層 140 :第二透明導電層 17 201133878 jz jz^ujtwf.doc/n 150 :光反射結構 150a〜150d :圖案化結構 150e、150f :光反射結構層 152、152a、152b :第一子圖案結構 153a、153b、153c :凹凸結構 154、154a、154b :第二子圖案結構 LI、L2 :光束SnO port 4, bismuth, oxidized, oxidized, indium tin oxide, stannic acid recorded (Cd2 ' ^ ^ ^ ^ (stannicoxide) ^ # ^ ^ =., machine shot village _ _ coffee) or Cheng (Pigment). In an embodiment not shown, the patterned structure may also be a layer of 5 layers alternately arranged of a chelating material and a plurality of second polymer materials, wherein the first polymer material is, for example, glycolated. The second polymer material is, for example, polyethylene naphthalate or polyethylene gelate for the copolymerization of the polyethylene terephthalate or the copolymer of the base acetic acid polyethylene terephthalate. Copolymer. The above materials are merely exemplified, as long as the material of the light reflecting structure 15G of (4) can reflect at least a light beam having a wavelength of light ranging from 600 nm to 11 (8) nm, which is below the range to be protected by the present invention. Different embodiments are used to explain the design of the thin film solar cells 10 〇 b ～ 100 f. It is to be noted that the following embodiments use the same reference numerals and parts of the above-described embodiments, in which the same reference numerals are used to refer to the same or similar elements, and the description of the same technical content is omitted. The description of the omitted portions can be referred to the foregoing embodiment, and the following embodiments will not be repeated. Fig. 3 is a cross-sectional view showing a thin film solar cell according to another embodiment of the present invention. Referring to FIG. 1 and FIG. 3 simultaneously, the thin film solar cell 100b of the present embodiment is similar to the thin film solar cell 1A of FIG. 1. The difference between the two is that the light reflecting structure 15 of the present embodiment is patterned. The structure 15〇b, wherein a surface of the first sub-pattern structure 152a of the patterned structure 150b is in contact with the second transparent conductive layer 140 of the 201133878 52 325〇3twf.doc/n is, for example, a relief structure 15%. In detail, the patterned structure 15〇b of the present embodiment covers the second transparent conductive layer 140' over the entire surface, and the surface of the first sub-pattern structure 152a and the second transparent conductive layer “o” is a concave-convex structure 153a, wherein the concave-convex structure The structure 153a is, for example, cleaved to form a surface microstructure on the surface of the first sub-pattern structure 152a. Of course, in other embodiments not shown, the concavo-convex structure I53a may also be formed on the surface of the second transparent conductive layer 140. Since the surface of the patterned structure 150b in contact with the second transparent conductive layer 14 is the uneven structure 153a, when the light beam L1 is transmitted to the uneven structure 153a, the light beam L1 is easily reflected and scattered by the uneven structure 153a. The rear light beam L2 can increase the light path of the light beam L2 passing through the photovoltaic layer 130, thereby increasing the chance that the light beam L2 is absorbed by the photovoltaic layer no, thereby improving the overall photoelectric conversion efficiency. In addition, the wavelength range of the light wave in the light beam L1 is between The light beam L2 between 600 nm and 1100 nm can be directly reflected by the patterned structure 150b to the photovoltaic layer 130. In other words, the first sub-pattern junction of the patterned structure 15〇b 15 2 a and the second sub-pattern structure 丨 5 4 may affect the direction of the light beam L1, so that the light beam L1 is reflected and scattered on the surface of the first sub-pattern structure 152a and the second transparent conductive layer 140, or The reflection phenomenon is generated through the second sub-pattern structure 154. Thus, the opportunity for the reflection of the light beam L1 in the thin film solar cell 1b can be increased to enhance the light path of the light beam L1 through the photovoltaic layer 13 = increasing the chance that the beam L1 is absorbed by the photovoltaic layer 13 ,, and generating more pairs of holes. In other words, the thin film solar cell 8 (8) Η effectively improves the utilization of the light beam L1, thereby improving its photoelectric conversion efficiency. 201133878 jz. j> ^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^ The difference between the two sub-pattern structures 154 & the contact with the first sub-chamber structure 152 is a relief structure 15 , wherein the concave second structure 153 b is formed, for example. The sub-pattern structure 15 is as follows = microstructure. Of course, in other embodiments not shown in detail, the concavo-convex structure may also be a surface micro-structure formed on the surface of the first-sub-pattern structure 152. σ Figure 5 is an invention A further schematic diagram of a thin film solar cell surface of the embodiment. Please refer to phase 3 and FIG. 5 at the same time. The thin solar cell circle of this embodiment is similar to the thin film solar cell of FIG. 3, which is similar to: The surface of the first embodiment of the present embodiment in contact with the second transparent conductive layer 140 is, for example, a concave-convex structure, and the first structure 154b and the first sub-pattern structure (10) are connected to the convex structure (10). Wherein, in the embodiment of the uneven structure (10), the surface microstructure on the surface, and in the embodiment where the unevenness is not shown, the concave-convex structure may also be concave, and the surface microstructure on the surface of a transparent conductive layer 140 may be The microstructure may be formed by (4)-subgraph coerculation (10) surface ~15=t must be said to be 'the invention does not limit the patterned structure 150a L. Although the patterned structure mentioned here is, for example, ~14 201133878 jz jzj〇3twf.doc/n is embodied as having a first-sub-pattern structure 152, 152a, 152b and a second +, the case structure 154, i54a, (10)' means that the patterned structure 15: ~ "疋 by two layers The sub-@News is shouting, but other known light beams that can achieve the same reflected light wave range from _ nanometer to nanometer. For example, the patterned structure is only a layer of continuous structural layer, Structural layer, multi-cycling layer or Qianqi discontinuous structure layer is not = the technical solution of the present invention can be omitted from the section of the thin film solar cell which does not deviate from the present invention. Fig. _ When the reference phase and Figure 6, this real complement ^ also work with the thin film solar power of Figure 1. The coffee is similar, two 3 = and the light reflection structure is formed in one piece, in which the light is reversed: the second - 5 〇e covers the second transparent conductive layer, which is used to increase the chance of being reflected in the enamel solar cell. In order to increase the light path of the beam 1 through the photovoltaic layer 13G, thereby increasing the chance that the beam u is absorbed by the photovoltaic reed, and generating more electronic electric Tongxiang pairs. In other words, the solar energy battery can effectively improve the utilization rate of the light beam L1: : To increase its photoelectric conversion efficiency. It is further worth mentioning that the invention does not limit the form of light, the axis (four) is compliant with the radiance / 51 = stratification = = the second transparent conductive layer 140' but known The other wavelengths of the first wave can range from _ nanometer to 11Q() nanometer = temple countermeasure', for example, the reflection junction _15Ge only the money cover; 15 201133878 jz, jvjiwf.doc/n without departing from the invention The desired 140' is still the technical side that can be used in the present invention, the scope of protection. 〃 m / face diagram. Please also refer to Figure 6 disk type Yang this battery's energy-cut battery earning disk Figure 6 of the guest amine female figure t a thin film of the solar layer (10) of the embodiment of the contact ===; = two transparent conductive is formed in the light reflecting structure; According to other embodiments not shown, the concave-convex structure 15 can also be used for the surface microstructure on the surface of the second transparent conductive layer. The light reflection junction is arranged on the layer = the opportunity to increase the reflection of the solar cell towel in the county (four) is mentioned, and the electron path of the neon layer can be increased. Light reflection: 'Thin film solar cells can effectively improve the utilization of the beam, and then increase its photoelectric conversion efficiency. In addition, the design of the concave-convex structure can also make the beam and radiate reflection to the photovoltaic layer, which can improve the passage through the photovoltaic layer. The optical path I of the beam in turn increases the chance of the beam being absorbed by the photovoltaic layer, thereby increasing the overall photoelectric conversion efficiency. The present invention has been disclosed in the above embodiments, but it is not intended to limit the scope of the invention, and any one of ordinary skill in the art can make some modifications and refinements without departing from the spirit and scope of the invention. Therefore, the scope of protection of the present invention is subject to the definition of the patent Fan Lin. 16 201133878 όζ ^ZD〇3twf.doc/n [Schematic Description of the Drawings] Fig. 1 is a schematic cross-sectional view showing a thin film solar cell according to an embodiment of the present invention. 2A through 2D are top views of light reflecting structures of various different embodiments. Fig. 3 is a schematic cross-sectional view showing a thin film solar cell according to another embodiment of the invention. Fig. 4 is a schematic cross-sectional view showing a thin film solar cell according to another embodiment of the invention. Fig. 5 is a schematic cross-sectional view showing a thin film solar cell according to another embodiment of the invention. Fig. 6 is a schematic cross-sectional view showing a thin film solar cell according to another embodiment of the invention. Fig. 7 is a schematic cross-sectional view showing a thin film solar cell according to another embodiment of the invention. [Main component symbol description] 100a to 100f: thin film solar cell 110: transparent substrate 110a: light incident surface 11b: light exit surface 120: first transparent conductive layer 130: photovoltaic layer 140: second transparent conductive layer 17 201133878 jz Jz^ujtwf.doc/n 150: light reflecting structures 150a to 150d: patterned structures 150e, 150f: light reflecting structure layers 152, 152a, 152b: first sub-pattern structures 153a, 153b, 153c: concave and convex structures 154, 154a, 154b: second sub-pattern structure LI, L2: beam
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