TW201132229A - Organic electroluminescence device and fabricating method thereof, display device and lighting device - Google Patents

Organic electroluminescence device and fabricating method thereof, display device and lighting device Download PDF

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Publication number
TW201132229A
TW201132229A TW099129517A TW99129517A TW201132229A TW 201132229 A TW201132229 A TW 201132229A TW 099129517 A TW099129517 A TW 099129517A TW 99129517 A TW99129517 A TW 99129517A TW 201132229 A TW201132229 A TW 201132229A
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Taiwan
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layer
organic
light
electron
hole
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TW099129517A
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Chinese (zh)
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Naoyuki Hayashi
Masayuki Mishima
Takashi Kato
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Fujifilm Corp
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/12Deposition of organic active material using liquid deposition, e.g. spin coating
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14Carrier transporting layers

Abstract

An organic electroluminescence device and fabricating method thereof, with display device and lighting device having excellent lighting efficiency and durability, a low driving voltage, and which the fabricating cost can be reduced are provided. An organic electroluminescence device of this invention having a lighting layer and at least a layer adjoined to the lighting layer between a pair of electrodes, and at least the layer adjoined to the lighting layer is formed by spraying a liquid including two or more low molecular compounds of molecular weight of 1500 or less. An organic electroluminescence device, wherein at least the layer adjoined to the lighting layer is hole transport layer.

Description

201132229 六、發明說明: 【發明所屬之技術領域】 本發明是有種有機電激發光元件、有機電激發 光兀件的製造方法、顯不裝置及照明裝置。 【先前技術】 作為顧了械㈣之轉(deviee),^躍 =激發光元件(以下亦稱為有機EL元件)、利用了有機 ^導體之電晶體(她_〇等之研究。特狀 孤几件作為固體發光型大面積全彩顯示元 2 ^積:光源的照明用途的發展。通常情況下,有機電激發 2件由包含發光層之有機化合物層以及失持該有機化合 施力二對對:電極而構成。若對此種有機電激發光元件 酬子注入至有機化合物層且自陽極 八礼主入至有機化合物層。該電子與電洞在發光層再結 二:η:導帶恢復至價带時’將能量以光之形式: 出由此而獲得發光。 極間光元件之製造中,至於形成設在-對電 妒二ϊ ί缚膜的方法,可進行作為蒸鍍法的真空蒸 ’又,為濕、式法的旋塗法、印刷法、嘴墨法等。/ 用於真空中於基板上形成薄膜之方法,此種利 機ΕΓ:=電激發先元件,亦稱為蒸級型有 光源。 實用化為行動電洁或電視等之顯示器之發 然而’蒸鍍型有機EL元件之製造中的蒸锻步驟,對 4 201132229 蒸鏡裝置之設備成本或蒸鍍材料時之能量成本大,要求進 步減低有機電激發光元件之製造成本。 、濕式法亦可使用在蒸鍍等乾式製程(dry processes)中 難=成膜之高分子有機化合物,具有如下之優點:與蒸鍍 法等相比而δ製膜方法簡便、無需用於分塗之遮罩 Ghad〇w mask)或真空裝置、於用於可撓性顯示器等之情 幵乂時適於抗彎性(flexing resistance)或膜強度等之耐久性 之方面等,特別是面向大面積化、高精細化,適合今後之 大晝面有機EL顯示器之方法。 例如於日本專利特開2004-160388號公報、日本專利 特開細7-42314號公報中,揭示了使用塗佈法而製作構成 =EL元件之層的有機電激發光元件(以下 型有機EL元件)。 ^ 於日本專利特開2__66759號公報中揭示了有機層 1至少-層包含如下之有機層的元件:所述有機層使用二 12订了 ϋ華純化之至少—财機化合物的2種以上有機 &物,藉由/愚式製程(评拉pr〇cess )而形成。 -^叫寻利特開· 7_165231號公報中揭示了 =於塗佈分錄巾含有分健定劑,而分散穩定性良好 ^有機電激發光元剌非水塗佈分散液。另外,揭示了使 =塗佈分散液或轉水塗佈分散液而形成之顯示出較高 之外部出射罝子效率、且發光壽命長之有機见元件。 然而塗佈型有機肛元件中存在發光效率及敎 車乂低之異I認為於塗佈型EL元件中導致發光效率或 201132229 高分子材料,雖然存在採用塗佈二ΐ 利纖法而製膜之低分子材料通常使用可獲: 更回兀件性能之蒸鍍法而製膜。 【發明内容】 本發明之課題在於解決所述先前之問題點,達成以 之目的。 r 、即,本發明之目的在於提供一種有機電激發光元件, 所述有機電激魏元件之發光效率及耐久紐異、驅動電 壓低、且可降低製造成本。 而且,本發明之目的在於提供一種有機電激發光元件 的製造方法,所述有機電激發光元件的製造方法可以較低 之製造成本而製造發光效率及耐久性優異、驅動電壓低之 有機電激發光元件。 _ 另外,本發明之目的在於提供一種顯示裝置及照明裝 置’所述顯示裝置及照明裝置具有上述有機電激發光元件。 即’用以解決所述課題之手段如下所述。 [1] 一種有機電激發光元件,其是於一對電極間具有發光 層以及至少一層之與發光層鄰接之層的有機電激發光元 件,其特徵在於: 該至少一層之與發光層鄰接之層藉由含有2種以上之 分子量為1500以下之低分子化合物的液體,利用喷霧法而 形成。 6 201132229 [2] 如[1]所述之有機電激發光元件,其中,所述至少一層 之與發光層鄰接之層是電洞傳輸層。 [3] 如[1]或[2]所述之有機電激發光元件,其中,所述2種 以上之分子量為15〇〇以下之低分子化合物是第1低分子化 合物與第2低分子化合物之2種的化合物,其混合比例以 重量比計而言為20 : 80〜80 : 20。 [4] 如[1]〜[3]中任一項所述之有機電激發光元件,其中, 所述2種以上之分子量為15〇〇以下之低分子化合物是2 種以上之電洞傳輸材料。 [5] 如[4]所述之有機電激發光元件,其中,所述2種以上 之電洞傳輸材料的游離電位之差為〇」eV以上〇 6 eV以 下。 [6] 如[4]或[5]所述之有機電激發光元件,其中,所述2種 以上之電洞傳輸材料為芳基胺衍生物或叶·唾衍生物。 [7] 如[1]〜[6]中任一項所述之有機電激發光元件,其中, 所述至少一層之與發光層鄰接之層是電子傳輸層。 [8] 曰 如[7]所述之有機電激發光元件,其中,所述電子傳輸 201132229201132229 VI. Description of the Invention: [Technical Field] The present invention relates to an organic electroluminescence device, a method of manufacturing an organic electroluminescence device, a display device, and a lighting device. [Prior Art] As a revolving device (four), a dipole = an excitation element (hereinafter also referred to as an organic EL element), a transistor using an organic conductor (a study of her et al. Several pieces are used as solid-state light-emitting large-area full-color display elements. The development of lighting applications for light sources. Under normal circumstances, two pieces of organic electric excitation are composed of an organic compound layer containing a light-emitting layer and two pairs of organic compounding forces are lost. For the electrode: if the organic electroluminescent device is injected into the organic compound layer and from the anode to the organic compound layer, the electron and the hole are re-entangled in the luminescent layer: η: conduction band When returning to the valence band, 'the energy is in the form of light: the illuminance is obtained by this. In the manufacture of the interpolar optical element, as for the method of forming the film attached to the 对 ί ,, it can be used as the evaporation method. The vacuum steaming is again, wet, the spin coating method of the method, the printing method, the ink method of the mouth, etc. / The method for forming a film on a substrate in a vacuum, such a machine: = electric excitation first element, also It is called a steaming type and has a light source. The display of the display such as Jie or TV, however, the step of the steaming and forging in the manufacture of the vapor-deposited organic EL element has a large energy cost for the equipment cost of the steaming mirror device or the evaporation material of the 4 201132229, and it is required to progress to reduce the organic electroluminescent light. The manufacturing cost of the component. The wet method can also use a polymer organic compound which is difficult to form a film in a dry process such as vapor deposition, and has the following advantages: a δ film forming method compared with a vapor deposition method or the like. It is simple, does not require a mask for coating, or a vacuum device, and is suitable for durability of flexing resistance or film strength when used in a flexible display or the like. In particular, it is suitable for large-area, high-definition, and suitable for future large-surface organic EL displays. An organic electroluminescent device (hereinafter, an organic EL device) which is a layer constituting the EL element is formed by a coating method, as disclosed in Japanese Laid-Open Patent Publication No. Hei. No. Hei. 7-42314. ). An organic layer 1 comprising at least one layer of an organic layer having two or more organic &; matter, formed by the / fool process (review pr〇cess). - _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Further, an organic component which exhibits a high external emission enthalpy efficiency and a long luminescent lifetime which is formed by coating a dispersion liquid or a water-transfer coating liquid is disclosed. However, in the coated organic anal device, there is a difference in luminous efficiency and low yttrium. I think that the luminous efficiency is caused in the coated EL element or the polymer material of 201132229, although the film is formed by coating the bismuth fiber method. Low-molecular materials are usually formed by vapor deposition using a method that is more versatile. SUMMARY OF THE INVENTION An object of the present invention is to solve the above problems and achieve the object. r, that is, an object of the present invention is to provide an organic electroluminescence device which has low luminous efficiency and durability, low driving voltage, and reduced manufacturing cost. Further, an object of the present invention is to provide a method for producing an organic electroluminescence device which can produce an organic electric excitation which is excellent in luminous efficiency and durability and has a low driving voltage at a low manufacturing cost. Optical component. Further, an object of the present invention is to provide a display device and an illumination device. The display device and the illumination device have the organic electroluminescence element. That is, the means for solving the problem are as follows. [1] An organic electroluminescent device, which is an organic electroluminescent device having a light-emitting layer between a pair of electrodes and at least one layer adjacent to the light-emitting layer, wherein: the at least one layer is adjacent to the light-emitting layer The layer is formed by a spray method using a liquid containing two or more kinds of low molecular weight compounds having a molecular weight of 1,500 or less. [2] The organic electroluminescent device according to [1], wherein the at least one layer adjacent to the light-emitting layer is a hole transport layer. [3] The organic electroluminescent device according to [1], wherein the two or more low molecular compounds having a molecular weight of 15 Å or less are the first low molecular compound and the second low molecular compound. The compounding ratio of the two compounds is 20:80 to 80:20 by weight. [4] The organic electroluminescent device according to any one of [1], wherein the two or more low molecular compounds having a molecular weight of 15 Å or less are two or more types of hole transmission. material. [5] The organic electroluminescence device according to [4], wherein a difference in free potential between the two or more types of hole transport materials is 〇"eV or more and 〇6 eV or less. [6] The organic electroluminescent device according to [4], wherein the two or more types of hole transporting materials are arylamine derivatives or leaf/salt derivatives. [7] The organic electroluminescent device according to any one of [1], wherein the layer adjacent to the light-emitting layer of the at least one layer is an electron transport layer. [8] The organic electroluminescent device according to [7], wherein the electron transmission is 201132229

w .尤,A 層藉由含有2種以上之電子傳輸材料之液體而形成。 [9] 如[8]所述之有機電激發光元件,其中,所述2種以上 之電子傳輸材料之電子親和力之差為〇〗eV以上〇 6eV 下。 [10] 一種有機電激發光元件的製造方法,其是於一對電極 間具有發光層以及至少一層之與發光層鄰接之層的有機電 激發光元件的製造方法’其特徵在於: δ亥至少一層之與發光層鄰接之層藉由含有2種以上之 分子量為1500以下之低分子化合物的液體,利用喷霧法 形成。 [11] 如[10]所述之有機電激發光元件的製造方法,其中, 藉由所述喷霧法而形成所述發光層以及所述與發光層鄰 之層之各層。 [12] 一種顯示裝置’其具有如[1]〜[9]中任一項所述之有機 電激發光元件、或者由如[10]或[1丨]之任一項所述之有機電 激發光元件的製造方法而獲得之有機電激發光元件。 [13] 一種照明裝置’其具有如[1]〜[9]中任一項所述之有 電激發光元件、或者由如[10]或[11]之任一項所述之有機電 激發光元件的製造方法而獲得之有機電激發光元件。 8 201132229 發明之效果 藉^本發明,利用含有2種以上之分子量為_ 化合_顏,㈣餘而軸贿 層’错此可提供熱穩定性、發光效率及财久性優異,= 電壓低、可降低製造成本之有機電激發光元件。…動 ’藉岭伽,可提供—財機魏發光元件的 U法’崎錢電激發光元件㈣造方奸 製造成柄製造熱穩定性、發纽率及从性優異、驅 電壓低之有機電激發光元件。 ^卜’藉由本發明,可提供—種具有上述有機電 光兀件之顯示裝置及照明裝置。 為=本發明之上述和其他目的 '賴和優點能更明顯 曰易《下文特舉較佳實施例,她合所附圖式,作詳細說 月如下 【實施方式】 元件加以詳細 以下’對本發明之實施形態之有機EL 之說明。 本發明之有機EL元件是於一對電極間具有發光層以 及至少一層之與發光層鄰接之層的有機電激發光元件: 該^少一層之與發光層鄰接之層可藉由含有2種以上 之分子量為1500以下之低分子化合物的液體利用喷 而形成。 屯 ,處,本發日种之低分子化合物是指將具有不飽 之化曰物㈤胃聚合性單體)’使用起始劑使其不飽和鍵開 201132229 裂,使鍵結連鎖性成長而所得的並非所謂聚合物或寡聚 物、具有分子量為1500以下之固定分子量的化合物質 上並不具有分子量分布之化合物另外,分子量通常 100 以上。 藉此,形成與發光層鄰接之層的材料並不含有源自聚 合物合成或寡聚物合成中所使用之聚合起始劑、聚合終2 劑、鏈轉移鮮化合物之雜質。藉此可回避此種雜&使該 層之功能劣化之現象,因此可獲得發光效率及耐久性俨= 之有機電激發光元件。 分子量為_以下之低分子化合物更佳的是藉由公 知之純化方法進行了純化的化合物。藉此,可更確實地回 避雜質使各層之功能劣化之現象。公知之純化方法可列舉 昇華純化法、再結晶純化法、管柱純化法等。聚合物 聚物’在重複單元具有反應料意圖之外之結構之情形 時’非常難以藉由純化崎去此種聚合物絲聚物,因此 自該觀點考慮’較佳的是分子量為1500以下之低分子 物。 。 分子量為1500以下之低分子化合物為2種以上 的是2種〜4種’更佳的是2種〜3種,進—步更佳的是2 種。 分子量為測以下之低分子化合物為2種之情形時, 第1低分子化合物與第2低分子化合物之混合比例以重量 比計而言較佳的是20 : 80〜80 : 20,更佳的是3〇 : 7〇〜7〇 . 201132229 另外,上述構成之本發明之有機EL元件可降低驅動 電壓。 而且,藉由噴塗在溶劑中溶解或分散有構成層之材料 的液體而形成’ g此如上所述那樣,可無需採用装鑛步驟, 可降低有機EL元件之製造成本。w. In particular, the A layer is formed by a liquid containing two or more kinds of electron transporting materials. [9] The organic electroluminescent device according to [8], wherein a difference in electron affinity between the two or more electron transporting materials is 〇 eV or more and 6 eV. [10] A method of producing an organic electroluminescence device, which is a method for producing an organic electroluminescence device having a light-emitting layer between a pair of electrodes and at least one layer adjacent to the light-emitting layer. The layer adjacent to the light-emitting layer of one layer is formed by a spray method by a liquid containing two or more kinds of low molecular weight compounds having a molecular weight of 1,500 or less. [11] The method for producing an organic electroluminescence device according to [10], wherein the light-emitting layer and each layer of the layer adjacent to the light-emitting layer are formed by the spraying method. [12] A display device of the present invention, wherein the organic electroluminescent device of any one of [1] to [9], or the organic device of any one of [10] or [1] An organic electroluminescent device obtained by a method of producing an excitation light element. [13] An illuminating device having the electroluminescent device of any one of [1] to [9], or the organic electro-excitation according to any one of [10] or [11] An organic electroluminescent device obtained by a method of manufacturing an optical element. 8 201132229 Effect of the Invention According to the present invention, the molecular weight of two or more types is _ _ _ _ _, (4) and the bribe layer is wrong, which provides thermal stability, excellent luminous efficiency and longevity, = low voltage, An organic electroluminescent device that can reduce manufacturing costs. ...moving 'Lingling gamma, can provide - U-method of the financial device Wei light element' Saki money electric excitation light element (four) making a stalk to manufacture the handle to create thermal stability, excellent rate of injection and subordination, low drive voltage Electromechanical excitation of optical components. According to the present invention, a display device and an illumination device having the above-described organic electro-optical member can be provided. For the above and other objects of the present invention, the advantages and advantages can be more obvious. The following is a preferred embodiment, which is described in the following drawings. The details are as follows. [Embodiment] The components are detailed below. Description of the organic EL of the embodiment. The organic EL device of the present invention is an organic electroluminescence device having a light-emitting layer between at a pair of electrodes and at least one layer adjacent to the light-emitting layer: the layer adjacent to the light-emitting layer may have two or more layers A liquid of a low molecular weight compound having a molecular weight of 1,500 or less is formed by spraying.屯,处, the low-molecular compound of the present day, which means that it will have an unsaturated sputum (5) gastric polymerizable monomer) 'use the initiator to make the unsaturated bond open 201132229 crack, so that the bond grows chain-like The obtained compound which is not a polymer or an oligomer, and which has a molecular weight distribution of a compound having a molecular weight of 1500 or less has a molecular weight distribution, and has a molecular weight of usually 100 or more. Thereby, the material forming the layer adjacent to the light-emitting layer does not contain impurities derived from the polymerization initiator, the polymerization terminal agent, and the chain transfer fresh compound used in the synthesis of the polymer or the oligomer. Thereby, it is possible to avoid such a phenomenon that the function of the layer is deteriorated, and thus an organic electroluminescence element having luminous efficiency and durability 俨 = can be obtained. The low molecular weight compound having a molecular weight of _ or less is more preferably a compound purified by a known purification method. Thereby, it is possible to more reliably avoid the phenomenon that the impurities deteriorate the function of each layer. Well-known purification methods include sublimation purification method, recrystallization purification method, column purification method, and the like. The polymer polymer 'is very difficult to purify such a polymer filament by purifying when the repeating unit has a structure other than the intended purpose of the reactant. Therefore, from this viewpoint, it is preferable that the molecular weight is 1,500 or less. Low molecular weight. . Two or more kinds of low molecular weight compounds having a molecular weight of 1,500 or less are two or four kinds, and more preferably two or three kinds, and more preferably two types. When the molecular weight is determined to be two kinds of low molecular compounds, the mixing ratio of the first low molecular compound to the second low molecular compound is preferably 20:80 to 80:20 by weight, more preferably In the organic EL device of the present invention having the above configuration, the driving voltage can be lowered. Further, by spraying a liquid which dissolves or disperses the material constituting the layer in a solvent, as described above, it is possible to reduce the manufacturing cost of the organic EL element without using a charging step.

圖1表示本發明之有機EL元件之構成之一例。圖J 中所不之本發明之有機電激發光元件10於支撐基板2上, 於1¼極3與陰極9之間夾持著有機層。更具體而言,有機 層例如包含:陽極上之電洞注入層4、該電洞注入層4上 之電洞傳輸層5、該電洞傳輸層5上之發光層6、該^光層 6上之電洞阻播層7、該電洞阻擋㉟7上之電子傳輸層8曰。 固形物之含量相對於上述液體之總量並無特別之限 制’通常為0.0001 wt%〜1〇 wt% ’若鑒於採用噴霧法,較 佳的是 0.0001 wt°/〇〜1 wt%。 而且,較佳的是至少一層之與發光層鄰接之層是電洞 傳輸層。 特別是在電洞傳輸層之上直接設置發光層且在發光層 之^直接設置電子傳輸層之情料,所述㈣之溶劑較^ 的是相同之有機溶劑’藉此可使各層間之界©接合變得更 良好,特別容易獲得發光效率及耐久性優異之有機EL元 件。 +發光層以及與所述發光層鄰接之層的至少丨個可藉由 以喷霧法塗佈上述液體而形成。由此,特別是於藉由^霧 法而形成之層的下層是其他有機層之情形時,上述液體之 11 201132229 有機/合劑可更確實地減低將該其他有機層意圖之外之程度 地溶解等而造成損傷之虞,因此可獲得發光效率 、耐久性 及顏色再現性更確實地優異之有機元件。而且,喷霧 法與其他塗佈方法相比較,容易抑制溶劑之使用量,且容 易使其乾燥,因此可進一步降低製造成本。另外,藉由喷 霧法,可並不損傷藉由喷霧法而形成之層#下層地形成 層,因此適於形成多層之薄膜。 另外,藉由噴霧法而塗佈液體之步驟,換而言之,是 將於氣體(〜載體氣體片浮動有液體粒子之氣溶釈咖⑽ 喷,至預定面上m轉㈣成層之步驟。氣溶膠之 形態並無特別之限定,液體粒子之粒徑通常為0.01 μιη〜 ΙΟΟμιη:更佳為〇 〇1 μιη〜1〇μιη。上述氣體可列舉空氣、 氮氣、氬等。 喷霧法中所採用之喷霧裝置可任意使用公知之喷霧裝 氣冷膠之載體氣體之流量較佳的是〇1 〜 L/miy —更佳的是ai L/min〜1〇 [如化。 射時基於各層之所欲獲得之厚度之喷 種 分鐘〜ΗΗ、時1且,較㈣是乾燥絲空絲。的疋1 12 201132229 I於,^明中,發光層以及與所述發光層鄰接之層之至 v 1個疋藉由噴霧法塗佈上述液體而成的,其他層之塗佈 方法並無特別之限定。例如可藉由旋塗、氣刀塗佈、棒塗、 刀塗、斜板式塗佈、簾幕式塗佈、噴霧法、輯法、 法、策墨法等而進行。 另=^例如於陽極之上直接設置有電洞傳輸層之情形 ^,通常情況下’陽極之材料如後❹卩樣可採⑽有機溶 ,之耐受性高的材料’因此關於電洞傳輸層,可適宜使用 先前例示之液體之塗佈方法的任意種。 心然而,#於上述優點,例如關於發光層及電子傳輸層 ^木用喷霧法之情料,關於制傳輸層亦採用喷霧法: =可,:塗佈方法,因此其結果可降低製造成本。因此, ^疋猎由噴霧法塗佈所述液體而形成發光層以及 =η雜之層之各層的形態’最佳的是藉由噴霧 層=、ί體㈣成電洞傳輸層、發錢及電子傳輸層之各 明,參照圖1對所述有機層之層構成加以說 的而適宜=制,可根據有機EL元件之用途、目 可根S的A 特狀, 明並成之具體例可列舉如下’但本發 %極/電’同傳輸層/發光層/電子傳輸層/陰極 13 201132229 極 (2)陽極/電洞傳輸層/發光層/阻擋層/電子傳輪層/ 陰 (3)陽極/電洞傳輸層/發光層/阻擋層/電子傳 子注入層/陰極 θ电 子傳二)/:電洞注入層/電洞傳輸層咖 (5)陽極/電洞注入層/電洞傳輸層/發光層/阻 子傳輸層/電子注入層/陰極 e € 如上所述,於本發明中,所述與發光層鄰接之層 由塗佈在溶劑巾溶解或分散有構成層之材料的液^而开$ 成’較佳的是藉由塗佈法而形成電洞傳輸層或電子傳‘ 層’更佳的是藉由塗佈法而形成電洞傳輸層及電子傳^ 層’進-步更佳的是藉由塗佈法而形成發光層、電& 層及電子傳輸層。於包含電洞傳輸層與發光層與電子傳^ 層之連續之多個層(其中,該多個層是構成有機層之一; 分或全部之層)之各層中’更佳的是藉由塗佈在溶劑情 解或分散了構成各層之㈣的紐㈣成,,亦可於電 洞傳輸層與㈣層n或發光層與電子傳輪層之間插 入構成有機層之其他層(上述層構成⑵之情形時為阻擒 層)’上述多個層(上述層構成⑺之情形時為電洞傳輸 f '發光層、_層、及電子傳輸層)與藉由驗法而形 成任意層之情_比較而言,自多個狀—個端面過渡到 其他端面’各層之間的界祕合陕,θ此存在可獲得發 光效率及耐久性優異、可減低驅動電壓之有機EL元件的 201132229 傾向。 、有機層並無特別之限定,除發光層之外,亦可具有電 洞2層、電洞傳輸層、電子注人層、電子傳輸層、電洞 阻擔層、f子阻麟、激子卩讀料。^,該些各層亦 可分別兼具其他功能。 — 本發明亦關於-種有機電激發光元件的製造方法,苴 是^^電極間具有發光層以及至少—層之與發光層鄰接 之層,有機電激發光元件的製造方法,其特徵在於: 少—層之與發光層鄰接之層可藉由含有2種以上 :二:里為1500以下之低分子化合物的液體,利用噴霧法 而形成。 有機〉谷劑可列舉所述之有機溶劑。 而且可藉由喷務法而形成至少一層之與發光層鄰接 之層’更佳的是藉由喷霧法而形成發光層及至少—層之斑 鄰接之層之各層。更佳的是藉由噴霧法而形成電洞 及電子傳輸層,進—步更佳的是藉由倾法而形成 電洞傳輸層及電子傳輸層。較佳的是藉由喷霧法 體而形成電洞傳輸層、所述發光層及所述電子 之ι1層’更佳的是藉由噴霧法塗佈所述液體而 形成電洞傳輸層、發光層及電子傳輸層之各層。 之卡發明之製造方法巾’藉由㈣法塗佈所述液體 之步驟的較佳之一個態樣加以敍述。 ^明之錢電㈣光元件所含之有機層可藉由以下 3己載之任意方法而製膜。其原因在於:藉此可在藉由喷 201132229 ^ V-TL/AA 塗形成有機層時’除去載體氣體(惰性氣體)中之雜質(烴、 胺、顆粒)或配管中之顆粒/油等雜質。 、於本發明之製造方法中,較佳的是使由惰性氣體所構 成之載體氣體以及氧濃度為1〇〇 ppm以下且水分含有率為 100 ppm以下之塗佈液混合而成的氣溶膠堆積於基板上而 積層有機層,較佳的是對該惰性氣體進行 惰性氣體可使用氯、氣、氮等公知之氣體^=的是 使用氬、氮。 而且’於使所執轉堆積於基板上進行成膜而成的 有機層中,較佳的是於每1〇〇4111><1〇〇4111中,較〇241^更 大之顆粒不足1個。 較佳的是於氧濃度為100ppm以下、露點為^。C以1 之惰性氣體環境下進行製膜。而且,較佳的是於氧濃产# 100 PPm以下、露點為_3(rc以下之惰性氣體之環境下^秦 由上述方法而製膜之有機層進行乾燥或退火。另外,對方 所述塗佈液,較佳的是使其堆積於不溶之有機層上而 有機層。 件之要素加以詳細 其次’對構成本發明之有機EL元 之說明。 (基板) 本發明中所使用之基板較佳的是並不使自有機化合物 層發出之光散射或衣減之基板。其具體例可列舉紀穩定氧 化鍅(yttrium stabilized zirconia ’ YSZ)、玻璃等無機、 聚對苯二曱酸乙二酯、聚鄰苯二曱酸丁二酯、聚萘二曱酸 201132229 ::醋等聚醋、聚笨乙烯、聚碳酸 聚ϋ亞胺 '聚環婦烴、降冰片稀樹月旨 W錢、 等有機材料。 久取【―虱氣乙烯) 例如於使用麵作為基板之情形時 了減少自玻璃溶出之離子,較佳的是 玻=質’為 於使用驗石灰玻璃之情形時,較佳的是使用而且, 石夕等之阻擋塗佈(barrier e⑽)的驗石灰 二^化 ^之情料,祕岐.性、尺寸穩定性、耐溶2材 電絕緣性及加工性優異。 el·!1生、 關於基板之形狀、結構、大小等 可根據發光元件之用途、目的…特別之限制, 其板之㈣適宜選擇。通常情況下, 基,之祕較佳的疋板狀。基板之 :為積層結構;而且可藉由單一部件而形成; 個以上部件而形成。 』稭由2 基板可為無色透明亦可為有色透明,於不使 3所發出之光散射或衰_之㈣考慮,難的是無色 於基板上’可於其表面或背面設置防透濕層(阻氣 “I方層(Γ氣層)之材料可適宜使用氮化石夕、氧化 石=機物。防透濕層(阻氣層)例如可藉由高頻錢鑛 法等而形成。 於使用熱塑性基板之情形時,亦可視需要而設置硬塗 層、底塗層等。 (陽極) 201132229 陽極通常情況下具有作為將電洞供給至有機化合物層 之電極的功能即可,關於其形狀、結構、大小等並無特別 之限制,可根據發光元件之用途、目的,自公知之電極材 料中適宜選擇。陽極通常設為透明陽極。 陽極之材料例如可適宜列舉金屬、合金、金屬氧化物、 導電性化合物、或該些之混合物。陽極材料之具體例可列 舉摻雜了銻或氟等之氧化錫(AT0、FTO)、氧化錫、氧化 鋅、氧化銦、氧化銦錫(IT0)、氧化鋅銦(IZ0)等導電 性金屬氧化物,金、銀、鉻、鎳等金屬,以及該些金屬與 導電性金屬氧化物之混合物或積層物,雄化銅、硫化銅等 無機導電性物質,聚苯胺、聚噻吩、聚吡咯等有機導電性 材料、及該些與ΓΓΟ之積層物等。其中較佳的是導電性金 屬氧化物,特別是自生產性、高導電性、透明性等方面考 慮較佳的是ITO。 陽極例如可依照考慮與構成陽極之材料之適合性而自 卩刷方式塗佈方式等濕式方式,真空蒸鐘法'賤鍍法、 離子電錢法等物理性方式,化學氣相沈積法、電聚化學氣 2沈積法等化學性方式等+適宜選擇之方法,形成於所述 基板上。例如,於選擇ITO作為陽極之材料之情形時,陽 極之$成可依照直流或高頻波濺鍍法、真空蒸鑛法 電鍍法等而進行。 、 於本發明之有機EL元財,陽極之形成位置並 艮制,可根據發光元件之用途、目的而適宜選擇,較 佳的疋形成於所述基板上。於此情形時,陽極可形成於基 18 201132229 J «/-/! 材之其中一 另外,形於其之-部分上。 學性_行,亦可藉由雷:==之化 而且,亦可重疊遮罩進行真q料、物理_刻而進行’· 由舉離法或印觀㈣進行讀而進行,亦可藉 -概==可極之材料而適宜選擇,無法 5〇議〜2〇2吊為1〇nm〜5〇_左右,較佳的是 為較佳岐設為1G3咖下,更佳的是設 ί右=陽極為透明之情形時’可為無色透明亦可 的曰⑽明。為了自透明電極側射出發光,其透過率較佳 的疋60%以上,更佳的是7〇%以上。 另外,關於透明陽極,在澤田豐監修「透 新擴展歲驗(鬧中有所詳述,可將J = 之事項適用於本發明中。於使用耐熱性低之塑膠基材之情 形時,較佳的是使用ΓΓΟ或IZO,於150。〇:以下之低溫下 成膜之透明陽極。 (陰極) 陰極通常情況下具有作為將電子注入至有機化合物層 之電極的功能即可,關於其形狀、結構、大小等並無特別 之限制,可根據發光元件之用途、目的,自公知之電極材 料中適宜選擇。 構成陰極之材料例如可列舉金屬、合金、金屬氧化物、 導電性化合物、該些之混合物等。具體例可列舉鹼金屬(例 19 201132229 如Li、Na、K、Cs等)、鹼土金屬(例如Mg、Ca等)、金、 銀、鉛、鋁、鈉-鉀合金、鋰-紹合金、鎂-銀合金、銦以及 钂等稀土類金屬等。該些可單獨使用一種,但自兼顧穩定 性與電子注入性之觀點考慮,可適宜地併用2種以上。 該些材料中,於電子注入性之方面考慮,構成陰極之 材料較佳的是鹼金屬或鹼土金屬,於保存穩定性優異之方 面考慮’構成陰極之材料較佳的是以鋁為主體之材料。所 謂以紹為主體之材料,是指鋁單質、鋁與0.01 wt%〜1() wt%之鹼金屬或鹼土金屬之合金或該些之混合物(例如鋰· 鋁合金、鎂-鋁合金等)。 〇另外,關於陰極之材料,於日本專利特開平2-15595 號公報、日本專利特開平5-121172號公報中有所詳述,該 些公報中記載之材料亦可適用於本發明中。 Λ 關於陰極之形成方法,並無特別之限制, 可依照公知 可依照如下方法而進行:考慮與構成 式方式,真1铲夂合性’而自印刷方式、塗佈方式等濕 化學氣相t賴法、離子電鍍料物理性方式, 適宜選擇之方H漿化學氣相沈積法等化學性方式等中 情形時,可同時如’於選擇金屬等作為陰極之材料之 以上。了 Π時或順次依照濺鍍料而進行其—種或2種 形成陰極時之 刻而進行,亦可藉 疊遮罩進行真空菽 *、、、 ^化可藉由光鑛影法等之化學性银 ::射等之物理性蝕刻而進 鍍或雜㈣行,村糾舉離法或印 201132229 刷法等而進行。 ㈣發日种,陰極之形成位置並無特別之限制,可形 、匕合物層上之全部上,亦可形成於其—部分上。 产為0 1 η’於陰極與所述有機化合物層之間,亦可插入厚 入層。介亦可將齡電f層視為—種電子注 鏟法等而形i可藉由真空驗法、频法、離子電 可;極之材料而適宜選擇,無法 5〇mn〜1μιη。吊為1〇譲〜5〇师左右’較佳的是 藉由:ΐ方明亦可不透明。另外,透明之陰極可 l〇mn厚,i—^成.將陰極之材料薄薄地成犋為1⑽〜 之機層) 0或1Z。等之透明導電性材料。 件之有機層加以說明。本發明之有機EL元 有機層匕3電洞傳輸層、發光層、電子傳輪層。 層一層、電 =:等::r述那樣列舉阻撞 (發光層) θ 發光歧具有如下魏之層:概加電 電洞注入層或電洞傳輸層接受電洞,自陰極自,極、 而 或電子傳輸層接受電子,提供電_電子縣合之場戶^層 21 201132229 進行發光之功能。 是含有非晶態有機半導體之薄膜。 料材料而構成,較佳的是設為主體材 ίί 稱為發光性摻雜劑)之混合層之構成。 X光材料可騎祕絲料亦可 佳為鱗光發光材料。 耻㈣季又 ^體材料較佳的是電荷傳輸材料。主體材料可為一種 亦可為2種以上’例如可_電子傳輪性之主體材料 洞傳輸性之主體材料混合而成的構成。另外,發光層/中 可含有不具電荷傳輸性、不發光之材料。 為了提南色純度或者擴廣發光波長範圍,發光層可含 有2種以上之發光材料。而且,發光層可為—層亦可為2 層以上,該些層亦可以不同之發光色進 《磷光發光材料》 Λ 所述礙光發光材料通常可列舉含有過渡金屬原子或鋼 糸原子之錯合物。 例如,該過渡金屬原子並無特別之限定,較佳的可列 舉釕、1¾、把、鎢、銖、鐵、銀、金、銀、銅及鉑,更佳 的是銖、银及鉑,進一步更佳的是鈒、I白。 鑭系原子例如可列舉鑭、飾、錯、鉉、釤、銪、礼、 錢、銷、銷、録、叙、及銷。於s亥些綱系原子中,較佳的是 敛、销及礼。 錯合物之配位基例如可列舉G· Wilkinson等著之Fig. 1 shows an example of the configuration of an organic EL device of the present invention. The organic electroluminescent device 10 of the present invention, which is not shown in Fig. J, is supported on the support substrate 2 with an organic layer interposed between the 11⁄4 pole 3 and the cathode 9. More specifically, the organic layer includes, for example, a hole injection layer 4 on the anode, a hole transport layer 5 on the hole injection layer 4, a light-emitting layer 6 on the hole transport layer 5, and the light-emitting layer 6. The hole blocking layer 7 on the upper hole blocks the electron transport layer 8 on the hole 357. The content of the solid matter is not particularly limited with respect to the total amount of the above liquid 'usually 0.0001 wt% to 1 〇 wt%'. If it is a spray method, it is preferably 0.0001 wt ° / 〇 〜 1 wt%. Moreover, it is preferred that at least one of the layers adjacent to the light-emitting layer is a hole transport layer. In particular, the light-emitting layer is directly disposed on the hole transport layer and the electron transport layer is directly disposed on the light-emitting layer, and the solvent of the (4) is the same as the organic solvent, thereby making the boundary between the layers © The bonding is further improved, and it is particularly easy to obtain an organic EL device excellent in luminous efficiency and durability. At least one of the + luminescent layer and the layer adjacent to the luminescent layer can be formed by applying the liquid by a spray method. Therefore, particularly in the case where the lower layer of the layer formed by the mist method is another organic layer, the liquid 11 201132229 organic/mixture can more reliably reduce the degree of dissolution of the other organic layer. Since the damage is caused by the like, an organic component which is more excellent in luminous efficiency, durability, and color reproducibility can be obtained. Further, compared with other coating methods, the spray method is easy to suppress the amount of the solvent used and is easy to dry, so that the manufacturing cost can be further reduced. Further, by the spray method, it is possible to form a film of a plurality of layers without damaging the layer under the layer # formed by the spray method. Further, the step of applying a liquid by a spray method, in other words, a step of spraying a gas (the carrier gas sheet is floated with a liquid particle of a liquid solvent (10), and is transferred to a predetermined surface by m (four). The form of the aerosol is not particularly limited, and the particle diameter of the liquid particles is usually 0.01 μm to ΙΟΟμιη: more preferably 〇〇1 μιη to 1 〇μιη. Examples of the gas include air, nitrogen, argon, and the like. The spray device can be arbitrarily used. The flow rate of the carrier gas of the known spray-air-filled gel is preferably 〇1 〜 L/miy - more preferably ai L/min 〜1 〇 [如化. The thickness of the desired layer of each layer is ~ΗΗ, 11, and (4) is the dry silk yarn. 疋1 12 201132229 I, in the illuminating layer, and the layer adjacent to the luminescent layer The coating method of the other layer is not particularly limited, and may be applied by spin coating, air knife coating, bar coating, knife coating, or slant coating. Cloth, curtain coating, spray method, method, method, ink method, etc. ^ For example, when a hole transport layer is directly disposed on the anode, the material of the anode is usually as follows: (10) organically dissolved, a material with high tolerance. Therefore, regarding the hole transport layer, Any of the previously exemplified liquid coating methods can be suitably used. However, in the above-mentioned advantages, for example, regarding the light-emitting layer and the electron transport layer, the spray method is also used for the transfer layer. : = can,: the coating method, so the result can reduce the manufacturing cost. Therefore, the shape of each layer of the layer which is formed by spraying the liquid by the spray method to form the light-emitting layer and the layer of η impurity is the best The composition of the layer of the organic layer is determined by the spray layer =, the body (four) into the hole transport layer, the money transfer, and the electron transport layer, and can be used according to the use of the organic EL device. The specific form of the A-shaped shape of the Meguro S can be exemplified as follows: 'But the % pole/electric' with the transport layer/light-emitting layer/electron transport layer/cathode 13 201132229 pole (2) anode/hole Transport layer / luminescent layer / barrier layer / electron transfer layer / negative (3) anode / electricity Transport layer / luminescent layer / barrier layer / electron transfer sub-injection layer / cathode θ electron transmission 2) /: hole injection layer / hole transmission layer coffee (5) anode / hole injection layer / hole transmission layer / luminescent layer /Resistor Transport Layer / Electron Injection Layer / Cathode e As described above, in the present invention, the layer adjacent to the light-emitting layer is opened by a liquid coated with a material which dissolves or disperses the constituent layer in the solvent towel. It is preferable to form a hole transport layer or an electron transport layer by a coating method, and it is more preferable to form a hole transport layer and an electron transport layer by a coating method. The light-emitting layer, the electric layer, and the electron transport layer are formed by a coating method. In the layers comprising a plurality of layers of the hole transport layer and the light-emitting layer and the electron-transport layer (where the plurality of layers are one of the organic layers; one or more layers) are more preferably Coating in a solvent or dispersing the (4) formation of each layer (4), or inserting another layer constituting the organic layer between the hole transport layer and the (4) layer n or the light-emitting layer and the electron transport layer (the above layer In the case of the configuration (2), the above-mentioned plurality of layers (the case where the layer configuration (7) is the case, the hole transmission f 'light-emitting layer, the _ layer, and the electron transport layer) and the arbitrary layer are formed by the test. In contrast, from the transition of a plurality of shapes to the end faces of the other end faces, the boundary between the layers is sharp, and θ has a tendency to obtain an organic EL element having excellent luminous efficiency and durability and capable of reducing the driving voltage. . The organic layer is not particularly limited. In addition to the light-emitting layer, it may have a hole 2 layer, a hole transport layer, an electron injection layer, an electron transport layer, a hole blocking layer, a f-sub-ring, and an exciton. Reading materials. ^, these layers can also have other functions. The present invention also relates to a method for producing an organic electroluminescence device, which is characterized in that: a layer having an emission layer between electrodes and at least a layer adjacent to the light-emitting layer, and a method for producing an organic electroluminescence device, characterized in that: The layer adjacent to the light-emitting layer may be formed by a spray method by a liquid containing two or more kinds of two or more low molecular compounds of 1500 or less. The organic solvent can be exemplified by the organic solvent. Further, at least one layer adjacent to the light-emitting layer can be formed by a sputtering method. More preferably, each layer of the light-emitting layer and at least the layer adjacent to the layer of the layer is formed by a spray method. More preferably, the hole and the electron transport layer are formed by a spray method, and it is more preferable to form the hole transport layer and the electron transport layer by a tilting method. Preferably, the hole transport layer, the light-emitting layer, and the electron layer 1' are formed by spraying the body. More preferably, the liquid is coated by a spray method to form a hole transport layer and emit light. Layers and layers of the electron transport layer. The manufacturing method of the invention of the invention is described in a preferred aspect of the step of coating the liquid by the (four) method. The organic layer contained in the optical element (4) can be formed by any of the following methods. The reason is that the impurities (hydrocarbons, amines, particles) in the carrier gas (inert gas) or the particles/oil in the piping can be removed by forming the organic layer by spraying 201132229 ^ V-TL/AA. . In the production method of the present invention, it is preferred that the carrier gas composed of an inert gas and the coating liquid having an oxygen concentration of 1 〇〇 ppm or less and a water content of 100 ppm or less are mixed. The organic layer is laminated on the substrate. It is preferable to use an inert gas such as chlorine, gas or nitrogen for the inert gas, and argon or nitrogen is used. Further, in the organic layer formed by depositing the deposited layer on the substrate, it is preferable that the particles larger than 〇2411 are less than 1 in each of 4〇〇4111<1〇〇4111. One. Preferably, the oxygen concentration is 100 ppm or less and the dew point is ^. C is formed into a film under an inert gas atmosphere of 1. Further, it is preferable to dry or anneal the organic layer formed by the above method in an environment of an oxygen-producing #100 PPm or less and a dew point of _3 (in an inert gas of rc or less). The cloth liquid is preferably deposited on the insoluble organic layer to form an organic layer. The elements of the element are described in detail below for the description of the organic EL element constituting the present invention. (Substrate) The substrate used in the present invention is preferably. It is a substrate which does not scatter or reduce light emitted from the organic compound layer. Specific examples thereof include inorganic yttrium stabilized yttrium yttrium (YSZ), inorganic poly(ethylene terephthalate) such as glass, and polyethylene terephthalate. Polybutylene phthalate, polynaphthalene 201132229 :: vinegar and other polyester, polystyrene, polyaluminum polyethylenimine 'polycyclic hydrocarbon hydrocarbons, norbornene thin tree month W, money, etc. organic For the case of using a surface as a substrate, for example, when the surface is used as a substrate, it is preferable to reduce the ions eluted from the glass, and it is preferable that the glass is used for the case where the lime glass is used. Moreover, Shi Xi et al. Arrier e(10)) The lime test is the same as the material, the stability, the dimensional stability, the solvent resistance, and the electrical insulation and processability. El·!1, the shape, structure, size, etc. of the substrate can be selected according to the purpose and purpose of the light-emitting element. Usually, the base, the secret of the shape is better. The substrate is a laminated structure; and can be formed by a single component; more than one component. The straw can be made colorless or transparent, and it can be colored and transparent. It does not cause the light emitted by 3 to scatter or decay. (4) It is difficult to make a colorless layer on the substrate. (The material of the gas barrier layer I (the layer of the helium layer) may suitably be a nitride rock or an oxide stone. The moisture barrier layer (gas barrier layer) may be formed by, for example, a high-frequency money ore method. When a thermoplastic substrate is used, a hard coat layer, an undercoat layer, or the like may be provided as needed. (Anode) 201132229 The anode usually has a function as an electrode for supplying a hole to an organic compound layer, and regarding the shape thereof, The structure, the size, and the like are not particularly limited, and may be appropriately selected from known electrode materials depending on the use and purpose of the light-emitting element. The anode is usually a transparent anode. The material of the anode may be, for example, a metal, an alloy, a metal oxide, or a conductive material. The compound or a mixture thereof. Specific examples of the anode material include tin oxide (AT0, FTO) doped with antimony or fluorine, tin oxide, zinc oxide, indium oxide, indium tin oxide (IT0). Conductive metal oxides such as zinc indium oxide (IZ0), metals such as gold, silver, chromium, and nickel, and mixtures or laminates of the metals and conductive metal oxides, and inorganic conductivity such as maleated copper and copper sulfide. a material, an organic conductive material such as polyaniline, polythiophene or polypyrrole, and a laminate of the same and the like, among which a conductive metal oxide is preferable, in particular, self-productivity, high conductivity, transparency, and the like. In view of the above, ITO is preferable. The anode can be, for example, a wet type such as a coating method in consideration of suitability for a material constituting the anode, and a physical method such as a vacuum evaporation method, a ruthenium plating method, an ion electricity method, or the like. A method, a chemical vapor deposition method, a chemical polymerization method, a chemical deposition method, or the like, which is suitably selected, is formed on the substrate. For example, when ITO is selected as the material of the anode, the anode is formed. The method can be carried out according to a direct current or high-frequency wave sputtering method, a vacuum evaporation method, or the like. In the organic EL element of the present invention, the position of the anode is formed and tanning, and the light-emitting element can be used according to the purpose and purpose of the light-emitting element. Preferably, a preferred crucible is formed on the substrate. In this case, the anode may be formed on the base 18 201132229 J «/-/! One of the materials, on the part of it. It can also be carried out by using Ray:== and by overlapping masks to carry out the real q material, physical _ engraving and doing the reading by the lifting method or the printing (4), or by l-=== It is suitable for the choice of materials. It can't be discussed as ~1〇2 hanging for 1〇nm~5〇_, preferably it is better to set it to 1G3 coffee, and better to set ί right=anode In the case of being transparent, it may be colorless and transparent (10). In order to emit light from the transparent electrode side, the transmittance is preferably 60% or more, more preferably 7 % by weight or more. In Sawada's Supervisor's "Expanding the New Year's Test" (detailed in the trouble, J = can be applied to the present invention. When a plastic substrate having low heat resistance is used, it is preferred to use iridium or IZO at 150. 〇: The following transparent anode formed at low temperature. (Cathode) The cathode usually has a function as an electrode for injecting electrons into the organic compound layer, and the shape, structure, size, and the like are not particularly limited, and the electrode material can be known from the use and purpose of the light-emitting element. Suitable for selection. Examples of the material constituting the cathode include a metal, an alloy, a metal oxide, a conductive compound, a mixture thereof, and the like. Specific examples thereof include an alkali metal (Example 19 201132229 such as Li, Na, K, Cs, etc.), an alkaline earth metal (for example, Mg, Ca, etc.), gold, silver, lead, aluminum, a sodium-potassium alloy, a lithium-salt alloy, and magnesium. - rare earth metals such as silver alloys, indium, and antimony. One of these may be used alone, but two or more kinds may be used in combination as appropriate from the viewpoint of both stability and electron injectability. Among these materials, in view of electron injectability, the material constituting the cathode is preferably an alkali metal or an alkaline earth metal, and the material constituting the cathode is preferably a material mainly composed of aluminum in terms of excellent storage stability. . The material referred to as the main material is aluminum alloy, aluminum and 0.01 wt% ~ 1 () wt% of an alkali metal or alkaline earth metal alloy or a mixture thereof (such as lithium · aluminum alloy, magnesium - aluminum alloy, etc.) . In addition, the material of the cathode is described in detail in Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. Hei. Λ The method for forming the cathode is not particularly limited, and may be carried out according to a known method: considering the composition method, the true shovel merging property, and the wet chemical vapor phase t such as a printing method or a coating method In the case of the chemical method such as the Lai method and the ion plating material, and the chemical method such as the H-plasma chemical vapor deposition method which is suitable for selection, it is possible to simultaneously select a metal or the like as a material of the cathode. When the ruthenium or the sputtering is carried out in accordance with the sputtering material, or when the cathode is formed, the vacuum can be performed by the stacking mask, and the chemistry of the photo-mineralization method can be used. Sexual silver: The physical etching of the film, etc., is carried out by plating or miscellaneous (four) lines, and the village corrects the method or the printing method of 201132229. (4) The date of formation of the cathode is not particularly limited, and all of the shapeable and conjugated layers may be formed on the portion thereof. The resultant is 0 1 η' between the cathode and the organic compound layer, and may also be inserted into the thick layer. It can also be regarded as an electron injection method, etc., and the shape i can be selected by vacuum test, frequency method, ion electricity, and the material of the pole, and it is impossible to select 5〇mn~1μιη. Hanging for 1〇譲~5〇's left and right' is better by: ΐ方明 can also be opaque. In addition, the transparent cathode can be thick, i-^. The material of the cathode is thinly formed into a layer of 1 (10)~0 or 1Z. A transparent conductive material. The organic layer of the piece is explained. The organic EL element of the present invention has an organic layer 电3 hole transport layer, a light-emitting layer, and an electron transport layer. Layer 1 layer, electricity =: etc.: r describes the blocking (light-emitting layer) θ. The illuminating difference has the following layer: the electric hole injection layer or the hole transmission layer receives the hole, from the cathode to the pole, and Or the electron transport layer accepts electrons, and provides the function of illuminating the electricity. It is a film containing an amorphous organic semiconductor. The material is formed of a material, preferably a mixed layer of a host material γ, referred to as a luminescent dopant. X-ray materials can be used as a light-emitting material. The shame (four) season and the bulk material are preferably charge transport materials. The main material may be a mixture of two or more kinds of main materials which can be transported by a host material such as electron transfer. Further, the light-emitting layer/middle may contain a material which does not have charge transport property and does not emit light. In order to enhance the color purity of the south or to broaden the wavelength range of the light emission, the light-emitting layer may contain two or more kinds of light-emitting materials. Moreover, the luminescent layer may be a layer or a layer of two or more layers, and the layers may also have different luminescent colors into the phosphorescent luminescent material. The photo luminescent material generally includes a transition metal atom or a steel ruthenium atom. Compound. For example, the transition metal atom is not particularly limited, and preferred examples thereof include ruthenium, 13⁄4, palladium, tungsten, rhenium, iron, silver, gold, silver, copper, and platinum, more preferably ruthenium, silver, and platinum. More preferred is 鈒, I white. Examples of the lanthanide atom include 镧, 饰, 铉, 铉, 钐, 铕, 礼, 钱, 销, 销, 录, 叙, and 销. Among the atoms in the shai class, it is preferred to converge, pin and ritual. The ligand of the complex compound can be exemplified by G· Wilkinson et al.

Comprehensive Coordination Chemistry,Pergamon Press 公 22 201132229 司 1987 年發行;Η· Yersin 著之「Photochemistry and Photophysics of Coordination Compounds j Springer-Verlag △司19=年發行;山本明夫著之「有機金屬化學_基礎與 應用」裳華房公司,1982年發行等中記載的配位基等。 具體_己位基較佳的是:_素配位基(較佳為氣配位 土)、芳香族碳環配位基(例如較佳為碳數為5〜3〇、更佳 為碳數為6〜3〇、進—步更佳為碳數為6〜2()、特佳為碳數 ^ 6 12,環戊二烯基陰離子、苯陰離子、或蔡基陰離子 等)、含氮雜環配位基(例如較佳為碳數為5〜3〇、更佳為 碳數為6^30、進-步更佳為碳數為6〜2G、特佳為碳數為 12,苯基K、料料、歸料、聯喊、或啡琳 等)、二_配位基(例如乙醯丙酮等)、羧酸配位基(例如 較佳為碳數為2〜30、更佳為碳數為2〜20、進一步更佳為 碳數為2〜16,乙酸配位基等)、醇鹽配位基(例如較佳為 碳數為1〜3〇、更佳為碳數為i〜2G、進—步更佳為碳數為 6〜20’盼鹽配位基等)、魏氧基配位基(例如較佳為碳 數為3〜4G、更佳為碳數為3〜3G、進—步更佳為碳數為3 〜20,例如三曱基矽烷氧基配位基、二甲基-第三丁基矽烷 ^基配位基、三苯基魏氧基配位基等)、—氧化^配: 基、異腈配絲、減配位基、紐位基(健為碳 3〜40、更佳為碳數為3〜30、進一步更佳為碳數為3〜2〇、 特佳為碳數為6〜2〇’例如三苯基膦配位基等)、硫醇鹽配 位基(較佳為碳數為1〜30、更佳為碳數為1〜20、進—步 更佳為碳數為6〜2〇、例如苯基硫醇鹽配位基等)、膦氧^ 23 201132229 物配位基(較佳為碳數為3〜30、更佳為碳數為8〜30、進 一步更佳為碳數為18〜30、例如三苯基膦氧化物配位基 等),更佳為含氮雜環配位基。 上述錯合物可於化合物中具有一個過渡金屬原子,而 且亦可為具有2個以上過渡金屬原子之所謂多核錯合物。 亦可同時含有不同種之金屬原子。 於該些化合物中,發光性材料之具體例例如可列舉 US6303238B1、US6097147、WOOO/57676、WO00/70655、 W001/08230、W〇01/39234A2、WO〇1/41512A1、 W002/02714A2 ^ WO02/15645A1,WO02/44189A1 ^ WO〇5/19373A2、日本專利特開2謝撕柳、日本專利特 開2002-30267卜日本專利特開2〇〇2_117978、日本專利特 =:074、曰本專利特開2〇〇2_235076、曰本專利特 幵1,123982、日本專利特開 2()()2_17。684、肥211257、 曰日特開2觀26495、日本專利特開祕2卿4、 日ί祕247859、日本專利特開膽0、 日f㈣2]73674、日本專利特開勝2麵、 ,謂679、日本專利特開祖%機、 日本專利特開2〇〇6_256999、 曰本專利特開歷-_'日:=,2007-19462、 敝獻光細 料可列與τ A 刃寻其中更佳之發光性材 W錯合錯合物、Pt錯合物、Cu錯合物 、Re錯合物、 、·曰5物、Rh錯合物、Ru供人 物、恥錯合m供人板、日5物、以錯合物、0s錯合 ° '9 & 、Gd錯合物、Dy錯合物及Ce 24 201132229 錯合物。特佳為Ir錯合物、pt錯合物或Re錯合物,其中 較佳的是包含金屬-碳鍵結、金屬_氮鍵結、金屬_氧鍵結、 金屬-硫鍵結之至少一個配位樣式之Ir錯合物、pt錯合物 或Re錯合物。另外,於發光效率、驅動耐久性、色度等 觀點而言,特佳的是包含3牙以上之多牙配位基的;^錯合 物、Pt錯合物、或Re錯合物。 《螢光發光材料》 所述螢光發光材料通常可列舉苯幷噁唑、苯幷咪唑、 苯幷噻唑、苯乙烯基苯、二笨基丁二烯、四苯基丁二烯、 萘二曱醯亞胺、香豆素、吡喃、紫環酮(perin〇ne)、噁二 唑、醛連氮(aldazine)、吡喇哩啶(pyralidine)、環戊二^、 雙苯乙烯基蒽、喹吖啶酮、吡咯幷吡啶、噻二唑幷吡啶、 ^二烯、苯乙稀基胺、芳香族二次曱基化合物、縮合多 王衣方香族化合物(蒽、啡啉、芘、茈、紅螢烯或稠五苯等)、 8-經基料之金屬錯合物、鱗曱川錯合物或稀土類錯合 物所代表之各種金屬錯合物、有機石夕烧、及該些 二 衍生物等。 — 该些化合物中,發光材料之具體例可列舉日本專利特 開2009-16579號公報之段落[0054]〜[〇〇64]中例示之具體 化合物、日本專利特開2008-218972號公報之段落[〇〇59] 〜[0068]中例示之具體化合物、以及於後述之實例中所使 X光材料1等,為可適宜選擇的化合物,因此並不限 疋於該些化合物。 發光層中之發光材料,相對於發光層中通常形成發光 25 201132229 層之所有化合物重量而言, 久性、外部量子效率之顴 =wt%〜5〇 wt%,自耐 50wt%,更佳的是含有2〜、’較佳的是含有1 wt%〜 發光層之厚度並無特。〜4二Wt%。 500 nm,其中自外部量子效率點=較佳的是2細〜 〜2〇Γ體材跑喊5則^更佳的是^ 本發明中所使用之主體好 電洞傳輸性主體㈣輸性優異之 《電洞傳輸性主體》 本發明_所使用之電洞傳齡 舉以下之材料。 Π傳輪性域具體㈣例如可列 可列舉:轉、啊、料、氮雜啊、氮雜十坐、 ΐ各吸°惡°坐、心坐、°塞吩、多芳基烧煙、 比各t、°比㈣酮、苯二胺、芳基胺、經胺基取代之杳耳 酉同、笨乙縣蒽、_、腙、$、魏烧、芳_ 化合物、苯乙稀基胺化合物、芳香族二 二 有機矽烷、碳膜、以及該些之衍生物等。予化s物、 較佳的是啊衍生物、味嗤衍生物、芳香族 合物、噻吩衍生物,更佳的是分子内具有咔唑基之化人 《電子傳輸性主體》 σ 作為本發明中所使用之發光層内之電子傳輸性主體, 26 201132229 自提而耐久性、 較佳的是2.5 ev"^驅動電壓之觀點考慮’電子親和力Ea 3·4 eV以下,=上3’5 eV以下,更佳的是2 6 eV以上 且,自提高耐久性^佳的是2.8eV以上3.3eV以下。而 ip較佳的是5.7 eV ^氏驅動電壓之觀點考慮,游離電位 上7.0eV以下,上7.5 eV以下,更佳的是5.8 eV以 此種電 子值步更佳的是5‘9 eV以上6.5 eV以下。 料。 $卜生主體具體而言例如可列舉以下之材 可列舉:定、、 唾、°惡二啥、_ ^、♦坐"比唾、三唆、。惡 噻喃、琰二醯亞胺、心 甲烷、蒽酮、聯苯醌、二氧化 代之芳香族化合物、曱燒、二苯乙烯吡嗪、經氟取 些之衍生物b萘茈等之雜環四羧酸酐、酞菁、及該 物之金屬錯合物°”其他環形成缩合環)、 8-羥基喹淋衍生 *基之金屬;各或笨幷㈣配 電子傳輸性主體較合物等。 =働生物、三嗪衍生物等),其中何=: 自耐久性之方时慮,較㈣是金相合物。金屬錯 (a)更佳的疋具有配位於金屬上之財至少η 或氧原子或硫原子之配位基的金屬錯合物。 金屬錯合物令之金屬離子並無特別限制,較 離子、_子、雜子、雜子、_子、峰子、=離 子,離子絲離子,更佳的是鈹離子,離子、鎵離子、 27 201132229 鋅離子、鉑離子或把離子,進一步更佳的是鋁離子、鋅離 子或把離子。 所述金屬錯合物中所含之配位基有各種公知之配位 基’例如可列舉「photochemistly and Photophysics ofComprehensive Coordination Chemistry, Pergamon Press Public 22 201132229 Division issued in 1987; Η· Yersin's "Photochemistry and Photophysics of Coordination Compounds j Springer-Verlag △ Division 19 = annual release; Yamamoto Akira's "Organic Metal Chemistry _ Basics and Applications" The stall bases listed in the 1982 issue of the company. Specifically, the hexyl group is preferably a _ prime ligand (preferably a gas-coordinating earth) or an aromatic carbocyclic ligand (for example, preferably having a carbon number of 5 to 3 Å, more preferably a carbon number) 6 to 3 〇, more preferably, the carbon number is 6 to 2 (), particularly preferably, the carbon number is ^6 12, a cyclopentadienyl anion, a benzene anion, or a ketone anion, etc.), aza-containing a ring ligand (for example, preferably having a carbon number of 5 to 3 Å, more preferably a carbon number of 6 to 30, more preferably a carbon number of 6 to 2 G, particularly preferably a carbon number of 12, and a phenyl group). K, material, returning, screaming, or morphine, etc.), bis-coordination (such as acetamidine, etc.), carboxylic acid ligand (for example, preferably having a carbon number of 2 to 30, more preferably The carbon number is 2 to 20, more preferably 2 to 16 carbon atoms, an acetic acid ligand or the like, and an alkoxide ligand (for example, preferably 1 to 3 carbon atoms, more preferably carbon number i) ~2G, more preferred is a carbon number of 6 to 20', a salt ligand, etc.), a Wei oxygen ligand (for example, preferably a carbon number of 3 to 4 G, more preferably a carbon number of 3 to 3) 3G, further preferred is a carbon number of 3 to 20, such as a trimethyl decyloxy ligand, dimethyl-third a decane group, a triphenylpropoxy group, etc., an oxidizing group: a group, an isonitrile chain, a minus ligand group, a nucleus group (a carbon 3 to 40, more preferably a carbon) The number is 3 to 30, more preferably 3 to 2 carbon atoms, particularly preferably 6 to 2 carbon atoms, such as a triphenylphosphine ligand, etc., a thiolate ligand (preferably The carbon number is 1 to 30, more preferably the carbon number is 1 to 20, more preferably, the carbon number is 6 to 2, for example, a phenylthiolate ligand, etc., and the phosphine oxide is 23 201132229. a radical (preferably having a carbon number of from 3 to 30, more preferably a carbon number of from 8 to 30, still more preferably a carbon number of from 18 to 30, such as a triphenylphosphine oxide ligand, etc.), more preferably Nitrogen-containing heterocyclic ligand. The above complex compound may have one transition metal atom in the compound, and may also be a so-called multinuclear complex compound having two or more transition metal atoms. It can also contain different kinds of metal atoms. Among the compounds, specific examples of the luminescent material include, for example, US6303238B1, US6097147, WOOO/57676, WO00/70655, W001/08230, W〇01/39234A2, WO〇1/41512A1, W002/02714A2^WO02/15645A1 , WO02/44189A1 ^ WO〇5/19373A2, Japanese Patent Special Open 2 Xie Tear, Japanese Patent Special Open 2002-30267, Japanese Patent Special Open 2〇〇2_117978, Japanese Patent Special =: 074, 曰本专利专开 2 〇〇2_235076, 曰本专利特幵1,123982, Japanese Patent Special Open 2()()2_17.684,肥211257, 曰日开开2观26495,Japanese Patent Special Secret 2卿4,日ί秘247859 Japanese Patent Special Opener 0, Japanese f (4) 2]73674, Japanese Patent Special Open 2, 679, Japanese Patent Special Opener% Machine, Japanese Patent Special Open 2〇〇6_256999, 曰本专利特历历-_' Day:=,2007-19462, 敝 光 细 细 与 τ τ τ τ τ τ τ τ τ τ τ τ τ τ τ τ τ τ τ τ τ τ τ τ τ τ τ τ 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光曰5, Rh complex, Ru for the character, shame, m for the plate, day 5, for the complex, 0s for the difference '9 &, Gd complex, Dy Complex and Ce 24 201132229 complex. Particularly preferred is an Ir complex, a pt complex or a Re complex, wherein at least one of a metal-carbon bond, a metal-nitrogen bond, a metal-oxygen bond, and a metal-sulfur bond is preferred. Ir complex, pt complex or Re complex of the coordination pattern. Further, from the viewpoints of luminous efficiency, driving durability, chromaticity and the like, it is particularly preferable to include a multidentate ligand of 3 or more teeth, a Pt complex, or a Re complex. "fluorescent luminescent material" The fluorescent luminescent material generally includes benzoxazole, benzoimidazole, benzothiazole, styrylbenzene, diphenylbutadiene, tetraphenylbutadiene, naphthoquinone. Indole, coumarin, pyran, perinone, oxadiazole, aldazine, pyralidine, cyclopentadienyl, bisstyryl Quinacridone, pyrrolizin pyridine, thiadiazolidine pyridine, diene, styrene amine, aromatic secondary sulfhydryl compound, condensed polywangfang fragrant compound (蒽, morphine, 芘, 茈, red fluorene or pentacene, etc., 8-metal complex of the base material, strontium complex or rare earth complex, various metal complexes, organic stone, and Some derivatives and the like. The specific examples of the luminescent materials in the above-mentioned compounds include the specific compounds exemplified in paragraphs [0054] to [〇〇64] of JP-A-2009-16579, and the paragraphs of JP-A-2008-218972. The specific compound exemplified in [0068], and the X-ray material 1 and the like which are used in the examples described later are compounds which can be suitably selected, and therefore are not limited to these compounds. The luminescent material in the luminescent layer has a longness, an external quantum efficiency of wt=wt%~5〇wt%, and a self-resistance of 50wt%, more preferably than the weight of all the compounds in the luminescent layer that normally form the luminescent layer 25 201132229. It is a thickness of 2~, 'preferably containing 1 wt%~ luminescent layer. ~ 4 two Wt%. 500 nm, from the external quantum efficiency point = preferably 2 thin ~ ~ 2 〇Γ body screaming 5 then ^ is better ^ The main body used in the invention is good transmission hole body (four) excellent transmission "Curtain Transfer Subject" The present invention _ used the age of the hole to give the following materials. The specifics of the rumored rounds (4) can be listed, for example,: turn, ah, material, aza, aza, sit, sputum, sputum, sit, heart, °, aryl, burn, Each t, ° ratio (tetra) ketone, phenylenediamine, arylamine, amine-substituted 杳 酉 tong, stupid 蒽, _, 腙, $, Wei, _ compound, styrene amine compound , an aromatic di-diorganodecane, a carbon film, and derivatives thereof. A pre-chemical substance, preferably a derivative, a miso derivative, an aromatic compound, a thiophene derivative, and more preferably a human having an oxazolyl group, an electron transporting host σ as the present invention The electron-transporting body in the luminescent layer used in the process, 26 201132229 considers the 'electron affinity Ea 3·4 eV or less, = 3'5 eV from the viewpoint of durability, preferably 2.5 ev" In the following, it is more preferably 2 6 eV or more, and the self-improvement durability is preferably 2.8 eV or more and 3.3 eV or less. The ip is preferably 5.7 eV ^ drive voltage consideration, the free potential is below 7.0eV, above 7.5 eV, more preferably 5.8 eV. This electronic value is better than 5'9 eV or more 6.5 Below eV. material. Specifically, for example, the main body of the Buchi can be exemplified by the following materials: fixed, saliva, dioxin, _ ^, ♦ sitting " than saliva, three sputum,. Oxime, quinone diimide, cardamomethane, fluorenone, biphenyl fluorene, divalent aromatic compounds, tert-sinter, stilbene pyrazine, fluoride-derived derivatives, naphthoquinone, etc. a cyclic tetracarboxylic anhydride, a phthalocyanine, and a metal complex of the compound, "other rings form a condensed ring", a metal of 8-hydroxyquinoline derivative; each or awkward (d) electron-transporting host complex, etc. = 働 働, triazine derivatives, etc.), where == From the side of durability, (4) is a gold phase. Metal 错 (a) better 疋 has a wealth of at least η on the metal or A metal complex of a ligand of an oxygen atom or a sulfur atom. The metal complex has no particular limitation on the metal ion, and is more ion, _, hetero, miscellaneous, ionic, proton, = ion, ion filament More preferably, the ion, the ion, the gallium ion, the 27 201132229 zinc ion, the platinum ion or the ion, and more preferably the aluminum ion, the zinc ion or the ion. There are various well-known ligands in the base group', for example, "photochemistly and Photophysics of

Coordination Compounds」、Springer-Verlag 公司、H. Yersin 著、1987年發行,「有機金屬化學_基礎與應用_」、裳華房 公司、山本明夫著、1982年發行等中記載之配位基。 所述配位基較佳為含氮雜環配位基(較佳的是碳數為 1〜3〇、更佳的是碳數為2〜2〇、特佳的是碳數為3〜b, 可為單牙配位基亦可為2牙以上之配位基。較佳的是2牙 以上f牙以下之配位基。而且,2牙以上6牙以下之配位 基與單牙之混合配位基亦較佳。 配位基例如可列舉吖嗪配位基(例如可列舉吡啶配位 ,、聯㈣配絲、三聯邮配位基# )、減苯基唾配位 土(例如可列舉羥基苯基苯幷咪唑配 =基、經基苯基恤位基、賴基;:= “ i〜二==^2佳為碳數為1〜30、更佳為碳 一将佳為奴數為1〜10,例如可列舉甲氧基、乙 碳2_乙基[氧基#)、彡氧基配絲(較佳為 例如可列圭為碳數為6〜20、特佳為碳數為6〜12, 氧基' 4·聯笨氧^等)1·、奈氧基、2_萘氧基、2,4,6-三甲基苯 :、、厌數為1〜12,例如可列舉。比0定氧基、 28 201132229 吼嗪氧基、嘧啶氧基、及喹啉氧基等)、烷硫基配位基(較 佳為碳數為1〜30、更佳為碳數為丨〜如、特佳為碳數為J 〜12,例如可列舉甲硫基、乙硫基等)、芳硫基配位基(較 佳為碳數為6〜30、更佳為碳數為6〜2〇、特佳為碳數為6 〜12,例如可列舉苯硫基等)、雜芳基硫基配位基(較佳為 碳數為1〜30、更佳為碳數為、特佳為碳數為 例如可列舉吡啶基硫基、2_苯幷咪唑硫基、2_苯幷噁唑硫 基、及2·料ϋ硫鱗)、魏氧絲絲(較佳為碳 數為1〜30、更佳為碳數為3〜25、特佳為碳數為6〜2〇 , 例如可列舉三苯基魏氧基、三乙氧基魏氧基、及三異 丙基魏氧基朴料族烴_子配位基(難為碳數為 6〜3〇、更佳為碳數為6〜25、特佳為碳數為6〜2〇,例如 :列舉苯紐離子、萘基陰離子、及:€基陰離子等)、芳香 =環陰離子配位基(較佳為碳數為U、更佳為碳數 為2〜25、特佳為碳數為2〜2〇,例如可列舉料陰離子、 =陰離子吻坐陰離子、三唾陰離子、嗔唾陰離子、苯 子、νΪΪ陰離子、苯幷°塞°坐陰離子、°塞吩陰離 I離子等)、假,朵(1藏_)陰離子 魏氧基配位基、芳香族煙陰離子配位基、 -乂方香知雜環陰離子配位基。 土 本專胸列舉日 判特開20()2·235()76、日本專利特開細4·2ΐ4ΐ79、曰 29 201132229 開祕測62、日本專利特開2购2腿、日 開腦-22画、日本專利特開編彻13等令 °己戟之化合物。 自發本發明中之主體材料之含量並無特別之限定, it率、驅動電壓之觀點考慮,相對於形成發光層之 =有化合物之重量而言,較佳的是15 wt%以上%㈣以 下。 點A 本^种所使用之主體材料較佳的是玻璃轉移 ‘,=5。〇 C以上15(rc以下。更佳的是玻璃轉移點為6此以 一 〇c以下。若主體材料之玻璃轉移點不足50它,則於 元件之耐熱性之方面而言欠佳,若超過1贼,則於製膜 後之熱處理變困難之方面而言欠佳。 。亥二化合物中,作為本發明中之主體材料之具體例, 可列舉日本專利特開20〇9-16579號公報之段落[0〇79]〜 [0083]中例示之具體化合物、以及於後述之實例中所使用 之主體材料1等,但並不限定於該些化合物。 (電洞注入層、電洞傳輸層) 電洞注入層、電洞傳輸層是具有自陽極或陽極側接受 電洞而傳輸至陰極側之功能的層。 、於本發明中’至少—層之與發光層鄰接之層較佳的是 電洞傳輸層’ 2種以上之分子量為i動以下之低分子化合 物較佳的是2種以上之電洞傳輸材料。藉由混合兩種以上 之化合物,可提供自陽極之電洞注入性、及向發光層之電 洞主入性優異之塗佈型電洞注入層。而且,藉由混合2種 201132229 Γΐί低ί子化合物’可大幅度增加結晶化等熱穩定性’ 且可使兀件之熱穩定性提高。 2種以上之電洞傳輸材料的游離電位之差 〇.lev以上〇.一以下’更佳的是_以上〇切以下疋 於塗佈型7L件巾,通常❹PEDQT/PSS或芳基胺系 聚合物、星爆狀胺型等材料作為電洞注人層,該些化合物 之游離電位小。因此’ IT0 #之自陽極之電洞注入勢壘小, 向毛光層之電/同注人勢憂大,成為驅動電壓上升、財久性 惡化之主要原因。亦可於電财人層與發光層之間設置階 梯層’促進電洞注人,藉由使用游離電位之差為G1 ev以 上0.6eV以下之2種以上之電洞傳輸材料,可減少層數, 且可進一步降低成本。 —具體而言’較佳的是含有吼略衍生物、味唾衍生物、 三唑衍生物、噁唑衍生物、噁二唑衍生物、咪唑衍生物、 多芳基烧烴衍生物、料侧生物、財_衍生物、苯 j贿生物、芳基胺衍生#、經胺基取代之查耳崎生物、 苯乙烯基蒽衍生物、第酮衍生物、腙衍生物、芪衍生物、 f氮烧衍生物、芳香族三級胺化合物、笨乙婦基胺化合物、 芳香叔一-人甲基系化合物、酉大菁系化合物、外琳系化合物、 噻吩衍生物、有機矽烷衍生物、碳等之層。 “於本發明中’較佳的是2種以上之電洞傳輸材料含有 芳基胺衍生物或料触物,更㈣是含有絲胺衍生物 及十坐衍生物。其原时:該些材料之電洞傳輸性大 定。 31 201132229 於本發明之有機EL元 中,可含有雷 仵之電洞&gt;主入層或電洞傳輸層 為導入至電洞注入層或 而將有機化合物氧化之性質二::::以電子接受性 用有機化合物。 们制域化合物亦可使 鎵:言;無機化合物可列舉氣化鐵或氣化銘、氣化 叙乳化銦、五氣化銻等金屬_化物 化鉬等金&gt;1氧化物等。 减-飢及二乳 於有機化合物之情形時’可適宜使用具有縣、函素、 酐二Γ 作為取代基之化合物、醌系化合物、酸 酐系化合物、富勒烯等。 曰 曰 曰 曰 曰 曰 曰 曰 除此之外,可適且使用日本專利特開平⑵53、 j利特開平1M11463、日本專利特開平11251〇67、 j利特開20.^4()、日本專利特開誦_286〇54、 本專利特開綱㈣5,、日本專利特開讓·75、 本專利特開200M60493、日本專利特開2〇〇2 252〇85、 本專利特開2002-56985、日本專利特開2〇〇3_157981、 本專利特開2003-217862、日本專利特開2〇〇3 229278、 本專利特開2004-3426M、曰本專利特開2〇〇5 72〇12、^ 本專矛】特開2005-166637、曰本專利特開2005-209643等中 記載之化合物。 其中較佳的是六氰基丁二烯、六氰基苯、四氰乙烯、 ,氰對藏二甲烧、四氟四氰對_二甲烧、四·笨酉昆 (p-flu0ranil)、四氣對苯醌(p_chl〇ranii)、四溴對苯醌 32 201132229 (P-bn^nil)、對苯賦、2,6_二氣苯酉昆、2,5-二氯苯酿、 1,2,4,5-四氰基苯、;[,4_二氰基四氟笨、2,3_二氯_5,6_二氛基 苯醌、對二硝基苯、間二絲笨、鄰二石肖基苯、M_蔡酿、 2,3-二氣萘艇、以二硝基萘、二硝基萘、9鼻葱酿、 1,3,6,8-四硝基㈣、2,4,7_三鶴斗㈣、2,3,5,6_四氮基 吼咬、或富_ C6G,更佳的是六氰基丁二烯、六氰基苯、 四氰乙烯、四氰對醌二曱烷、四氟四氰對醌二曱烷、四氟 對苯酿、四氣對苯酿、四漠對笨酿、2,6_二氣苯酉昆、25_ 二,苯酿、2’3·二氯萘酿、•四氰基苯、&amp;二氯办 二亂基苯酿、或2,3,5,6-四氰基w,特佳的是四氟四氮對 酿二曱烧。 該些電子接受性摻雜劑可單獨使用,亦可使用2種以 上。電子接受性摻雜劑之使用量因材料之種類而異,相對 於電洞傳輸層材料而言,較佳的是G Q1 wt%〜5Qwt%,更 佳的是0.05 wt%〜2〇wt%,特佳的是〇」wt%〜1〇 wt%。 電洞注入層、電洞傳輸層之厚度,自降低驅動電壓之 觀點而言,較佳的是分別為500 nm以下。 電洞傳輸層之厚度較佳的是1 nm〜500 nm,更佳的是 5 nm〜200 nm,進一步更佳的是1〇 nm〜1〇〇 nm。而且, 電洞/主入層之居度較佳的是〇1 nm〜2〇〇 nm,更佳的是〇.5 nm〜10〇nm,進—步更佳的是1 nm〜100nm。 電洞注入層 '電洞傳輸層可為由上述材料之一種或2 種以上所構成之單層結構,亦可為由同一組成或不同種組 成之多個層所構成之多層結構。 33 201132229 (電子注入層、電子傳輸層) 兩工入層、電子傳輸層是具有自陰極或陰極侧接受 电子而傳輸至陽極側之功能的層。 為電:中’較佳的是至少一層之與發光層鄰接之層 ^子傳輸層。而且’較佳的是藉由含有2種以上之電子 傳輸材料的液體而形成電子傳輸層。藉由混合兩種以上之 化合物,可提供自陰極之電子注入性以及向發光層之電子 注入性優異之塗佈型電子注入層。 2種以上之電子傳輸㈣的電子親和力之差較佳的是 〇.1〜以上〇.6^乂下’更佳的是〇2〜以上〇5〜以下。 具體而言,較佳的是含有如下化合物之層:吡啶衍生 物、喧琳衍生物、咖定衍生物“比嗪衍生物、二氮雜蔡衍 生物、啡啉衍生物、三嗪衍生物、三唑衍生物、噁唑衍生 物、噁二唑衍生物、咪唑衍生物、第酮衍生物、蒽醌二甲 烷衍生物、蒽酮衍生物、聯苯醌衍生物、二氧化噻喃衍生 物、碳二醯亞胺衍生物、亞第基甲烷衍生物、二苯乙烯吡 嗪衍生物、奈、茈等之芳香環四叛酸軒、酞菁衍生物、 羥基喹啉衍生物之金屬錯合物或金屬酞菁、以苯幷噁唑或 苯幷噻唑為配位基之金屬錯合物所代表之各種金屬錯合 物’矽羅(silole)所代表之有機矽烷衍生物等。 於本發明之有機EL元件的電子注入層或電子傳輸層 中,可含有電子供應性摻雜劑。作為導入至電子注入層^ 電子傳輸層中之電子供應性摻雜劑’若具有以電子供應性 將有機化合物還原之性質即可’可適宜使用Li等驗金屬、 34 201132229 —,-,-,ν_ΤΜΑΧ g #鹼土金屬、包含稀土類金屬之過渡金屬或者還原性 有機化合物等。作為金屬,特別可適宜㈣功函數為4 2 ev 以下之金屬’具體而言可列舉Li、Na、K、Be、Mg、Ca、 =、如、丫、(:5七、^、(}(1及%等。而且,還原性有 機化合物例如可列舉含|Ut合物、含硫化合物、含填化合 物等。除此之外,亦可使用日本專利特開平6_212153、曰 本專利特開2000-196140、曰本專利特開2〇〇3_68468、曰 本專利特開2003-229278、日本專利特開2〇〇4_342614等中 記載之材料。 該些電子供應性摻雜劑可單獨使用,亦可使用2種以 上。電子供應性摻雜劑之使用量因材料之種類而異,相對 於電T傳輸層材料而言,較佳的是。.1 wt%〜99 wt%,更 佳的是l.Owt%〜80wt%,特佳的是2 〇wt%〜7〇加%。 自降低驅動電壓之觀點而言,較佳的是電子注入層、 電子傳輸層之厚度分別為500 nm以下。 電子傳輸層之厚度較佳的是1 nm〜湖nm,更佳的是 200 nm,進一步更佳的是1〇 nm〜1〇〇 。而且, '主入層之厚度較佳的是0.1 nm〜200 nm,更佳的是0.2 聰〜100 nm,進一步更佳的是0.5 nm〜50 nm。 錄v 人層、電子傳輸層可為由上述材料之一種或2 治ή 成之單層結構,亦可為由同—組成或不同種組 成之多個層所構成^層結構。 (電洞阻擋層) 電/同阻擔層疋具有防止自陽極側傳輸至發光層之電洞 35 201132229 通過陰極側之功能的層。於本發明中,可設置電洞阻擋層 作為在陰極側與發光層鄰接之有機化合物層。 構成電洞阻播層之化合物的例子可列舉:雙(2_曱基各 經基啥琳)(盼鹽)链專銘錯合物、三唾衍生物、2,9-二甲美 -4,7-二苯基-l,l〇-啡琳等啡啉衍生物等。 電洞阻擅層之厚度較佳的是1 nm〜500 nm,更佳的是 5伽〜200腿’進—步更佳的是1〇11111〜1〇〇腺。 電洞阻擋層可為由上述材料之一種或2種以上所構成 之單層結構,亦可為由同一組成或不同種組成之多個層所 構成之多層結構。 (電子阻擋層) 電子阻擋層是具有防止自陰極侧傳輸至發光層之電子 通過陽極側之功能的層。於本發明中,可設置電子阻擔層 作為在陽_與發光層鄰接之有機化合物層。 構成電子阻擋層之化合物的例子可適用例如上述之作 為電洞傳輸材料而列舉之化合物。 電子阻擒層之厚度較佳的是1 nm〜500 nm,更佳的是 m 2〇〇nm,進一步更佳的是l〇nm〜l〇〇nm。 ^阻擋層可為由上述材料之—種或2種以上所構成 :曰、、.。構’亦可為由同—組成或不同種組 構成之多層結構。 (材料之純化) 經純:^有機電激發光元件之有機層的材料較佳的是使用 之材料’更佳的是藉由帶域熔化法將至少1個以上 36 201132229 易純〜華純 製膜法之材料的料若 進仃純化則存在元件性能降低之情形。 曰由升華 現性用:域炫化法之純化與濕式製膜組合,則可實 與效由與餘組合,可實現耐久性 =H的是至少一 m材料是藉由帶域炫 進二了、4化讀料,且藉由濕式製膜 喷/ 而製作之有機電激發光元件。 、則土為噴塗法) 層地;料可所形成之 域熔化法純化之純化溫度較料^化=在於·帶 製程溫度通常更接近帶域熔低。塗佈 良好地進行帶域熔化法純化之材料 ^卩可效率 配列魏少之膜。若膜之配mm知射期 有機電激發光元件之發光效率之提高、 材料:=:2較佳的是1〇〇t〜400°c之範圍。而且, 主人材料、電荷傳輸材料、主體材料、 j材更佳的是π卡唾衍生物、芳基胺衍生物或金屬錯 合物。 (保護層) # 3!!:人亦可藉由保護層而保護整個有機EL元 件。保濩層中所含之材料若為具有防止水分或氧等促進元 37 201132229 ν/~ι 件劣化之物質進入至元件内之功能的材料即可。 其具體例可列舉In、Sn、Pb、Au、Cu、Ag、Α卜Ti、 Ni 等金屬 ’ Mg0、Si0、Si〇2、Ai2〇3、Ge0、Ni〇、Ca〇、 BaO、Fe2〇3、y2〇3、Ti02 等金屬氧化物,SiNx、siNx〇y 等金屬氮化物,MgFz、LiF、AIF3、CaF2等金屬氟化物, 聚乙稀、聚丙烯、聚曱基丙烯酸甲酯、聚醯亞胺、聚脲、 聚四氟乙烯、聚氣三氟乙烯、聚二氣二氟乙烯、三氟氯乙 烯與二氯二氟乙烯之共聚物、使四氟乙烯與包含至少一種 共單體之單體混合物共聚合而得之共聚物、於共聚主鏈上 具有環狀結構之含氟共聚物、吸水率為1%以上之吸水性 物質、吸水率為0.1%以下之防濕性物質等。 一保護層之形成方法並無特別之限定,例如可適用真空 ΐ鑛法、賤織、反應性賤鑛法、MBE (分子束蠢晶)^、 3 =束法、離子電鍍法、錢聚合法(高頻波激發離 電漿化學氣相沈積法、雷射化學氣相沈積法、 j錢相沈積法、氣義化學氣相沈積法、塗佈法 刷法、轉印法。 (密封) 元件S: ίί明ΐ有機EL元件可使用密封容器將整個 定,例如可列舉氧。水分㈣舰無特別之限 納、硫酸辦、硫_、、五2納;_氧化卸、氧化.硫酸 化銅、氟化铯、氟化起、、氯倾、氯化鎂、氯 虱匕鈮/臭化舞、漠化鈒、分子筛、彿石、 38 201132229 i氧㈣並鱗狀蚊,例μ列舉錢 類液心石躐類、全氟垸基或 氯系溶劑及聚物由(silleQne=/_4l_、 1二且免?可適且使用:藉由利用氧化矽、二氧化矽、 虱化矽、氮氧化矽、氧化鈕望+ hi… 7 樹脂、環氧樹脂、1機㈣或者利用丙烯酸 樹脂專之触㈣騎密細方法。 曰糸 (在、封接著劑) 八f:明中所使用之密封接著劑具有防止來自端部之水 分或乳滲入之功能。 &lt;素材&gt; 所述密封接著劑之材料可使用與所述樹脂密封層中所 „同之材料。其中,自水分防止之方面考慮, 較佳的疋%氧系接著劑,其中較佳的是光硬化型接劑 熱硬化型接著劑。 而且,於上述材料中添加填料亦較佳。 添加於密封劑中之填料較佳的是Si〇2、SiO (氧化 石夕)、SiON (氮氧化石夕)或siN (氮化石夕)等無機材料。 藉由添加填料,可使密封劑之黏度上升,提高加工適合性 (processing suitability )以及提高耐濕性。 〈密封接著劑之配方&gt; -聚合物組成、濃度 密封接著劑並無特別之限定,可使用如上所述之 接著劑。 39 201132229Coordination Compounds, Springer-Verlag, H. Yersin, issued in 1987, "Organic Metals Chemistry_Basic and Application_", Sanghuafang Company, Yamamoto Akio, 1982 issue, etc. The ligand is preferably a nitrogen-containing heterocyclic ligand (preferably having a carbon number of 1 to 3 Å, more preferably a carbon number of 2 to 2 Å, and particularly preferably a carbon number of 3 to 2). It may be a single-dentate ligand or a ligand of 2 or more teeth. It is preferably a ligand of 2 or more teeth below f teeth. Moreover, a ligand of 2 teeth or more and 6 teeth or less and a single tooth The mixed ligand is also preferred. The ligand may, for example, be a pyridazine ligand (for example, a pyridine complex, a ruthenium complex, a triplicate ligand #), or a phenyl-salt ligand (for example, Illustrative examples thereof include hydroxyphenylbenzimidazole with a base, a transphenyl group, and a lysine; := “i~2==^2 preferably has a carbon number of 1 to 30, more preferably a carbon one. The number of slaves is from 1 to 10, and examples thereof include a methoxy group, an ethyl group of 2-ethyl [oxy group], and a decyloxy group (preferably, for example, the carbon number is 6 to 20, particularly preferably The carbon number is 6 to 12, the oxy '4 · phenylene oxide, etc.) 1, the naphthyloxy group, the 2 -naphthyloxy group, the 2,4,6-trimethylbenzene: and the number of the anastomoses is 1 to 12 For example, a certain ratio of alkoxy groups, 28 201132229 pyridazinyloxy group, pyrimidinyloxy group, and quinolinyloxy group, alkylthio group (preferably having a carbon number of 1 to 30, more preferably a carbon number of 丨~, particularly preferably a carbon number of J 12 to 12, for example, a methylthio group or an ethylthio group), and an arylthio group. (preferably having a carbon number of 6 to 30, more preferably a carbon number of 6 to 2 Å, particularly preferably a carbon number of 6 to 12, for example, a phenylthio group, etc.), or a heteroarylthio group (for example) Preferably, the carbon number is from 1 to 30, more preferably the carbon number is used, and particularly preferably the carbon number is, for example, a pyridylthio group, a 2-benzoimidazolium group, a 2-benzoquinazolylthio group, and 2 · ϋ sulfur scales), Wei oxygen filaments (preferably having a carbon number of 1 to 30, more preferably a carbon number of 3 to 25, and particularly preferably a carbon number of 6 to 2 Å, for example, triphenyl Wei An oxy group, a triethoxy methoxy group, and a triisopropyl valoxy hydride group _ sub-ligand (it is difficult to have a carbon number of 6 to 3 Å, more preferably a carbon number of 6 to 25). The carbon number is 6 to 2 Å, for example, benzophenone ion, naphthyl anion, and: anion anion, etc., aromatic=cyclic anion ligand (preferably, the carbon number is U, more preferably the carbon number is 2 to 25, particularly preferably, the carbon number is 2 to 2 〇, for example, an anion, an anion kiss can be cited. Anions, tri-salt anions, cesium salium anions, benzenes, νΪΪ anions, benzoquinones, sitting anions, ° phenanthrene, I, etc.), pseudo, (1) _ anion, alkoxy ligand, Aromatic-smoke anion ligand, - 乂方香知-Heterocyclic anion ligand. Earth-based chest enumeration, special opening 20 () 2 · 235 () 76, Japanese patent special opening 4 · 2 ΐ 4 ΐ 79, 曰 29 201132229 Open the secret test 62, the Japanese patent special open 2 buy 2 legs, the Japanese open brain -22 painting, the Japanese patent special open edit 13 and other compounds. The content of the host material in the present invention is not special. From the viewpoint of the definition, the ratio of the it and the driving voltage, it is preferably 15 wt% or more (four) or less with respect to the weight of the compound having the light-emitting layer. Point A The material used in this type is preferably glass transfer ‘,=5. 〇C is 15 or more (rc or less. More preferably, the glass transfer point is 6 or less and less than 50. If the glass transition point of the host material is less than 50, it is not good in terms of heat resistance of the component, if it exceeds In the case of the thief, the heat treatment after the film formation becomes difficult. In the case of the compound of the present invention, as a specific example of the main material in the present invention, Japanese Patent Laid-Open Publication No. Hei 20- 9-16579 Specific compounds exemplified in paragraphs [0〇79] to [0083], and host materials 1 and the like used in the examples described later, but are not limited to these compounds (hole injection layer, hole transport layer). The hole injection layer and the hole transport layer are layers having a function of receiving a hole from the anode or the anode side and transmitting to the cathode side. In the present invention, at least the layer adjacent to the light-emitting layer is preferably electrically. The hole transport layer 'two or more kinds of low molecular weight compounds having a molecular weight of i or less are preferably two or more kinds of hole transport materials. By mixing two or more kinds of compounds, hole injection property from the anode can be provided, and Excellent entry into the light-emitting layer The cloth type hole injection layer. Moreover, by mixing two kinds of 201132229 Γΐί low-yield compound ', the thermal stability such as crystallization can be greatly increased' and the thermal stability of the element can be improved. Two or more holes are transmitted. The difference between the free potential of the material is lev.lev or more. One or less 'better' is more than the above. The following is the coating type 7L towel, usually ❹PEDQT/PSS or arylamine polymer, starburst amine type. When the material is used as a hole injection layer, the free potential of these compounds is small. Therefore, the injection hole of the hole from the anode of IT0# is small, and the power to the hair layer is worried, which becomes the driving voltage rise. The main reason for the deterioration of the financial system is that a step layer can be provided between the electric energy layer and the light-emitting layer to promote the injection of holes, and the difference between the free potentials is two or more of G1 ev or more and 0.6 eV or less. The hole transporting material can reduce the number of layers and further reduce the cost. - Specifically, it is preferable to contain a derivative derivative, a salivary derivative, a triazole derivative, an oxazole derivative, and an oxadiazole derivative. , imidazole derivatives, polyaryl hydrocarbon derivatives, Side organisms, financial derivatives, benzene bribs, arylamine derivatization #, amine-substituted Chasaki organisms, styrylpurine derivatives, ketone derivatives, anthracene derivatives, anthracene derivatives, f nitrogen a burned derivative, an aromatic tertiary amine compound, a stupid ethylamine compound, an aromatic tertiary mono-human methyl compound, an anthracene polyphthalocyanine compound, a foreign compound, a thiophene derivative, an organic decane derivative, carbon, or the like In the present invention, it is preferred that two or more kinds of hole transporting materials contain an arylamine derivative or a material touch, and (4) a silk amine derivative and a ten-seat derivative. The hole transportability of these materials is large. 31 201132229 In the organic EL element of the present invention, a hole containing a Thunder can be included. The main entry layer or the hole transport layer is introduced into the hole injection layer or organic. Properties of Compound Oxidation 2:::: Organic compounds for electron acceptability. The compound of the domain can also be made of gallium: in terms of inorganic compounds, such as gasified iron or gasification, gasification, indium, five gasification, and the like, metal such as molybdenum, and the like. In the case of the reduction of the hunger and the emulsification of the organic compound, a compound having a county, a functional element, or an anhydride dioxime as a substituent, an anthraquinone compound, an acid anhydride compound, a fullerene or the like can be suitably used. In addition to this, it is possible to use Japanese Patent Special Kaiping (2) 53, j Lite Kaiping 1M11463, Japanese Patent Special Kaiping 11251〇67, j Lite Open 20.^4 (), Japanese Patent Special opening _286〇54, this patent special opening (four) 5, Japanese patent special opening 75, this patent special opening 200M60493, Japanese patent special opening 2〇〇2 252〇85, this patent special opening 2002-56985, Japanese Patent Laid-Open No. 2〇〇3_157981, Japanese Patent Laid-Open No. 2003-217862, Japanese Patent Laid-Open No. Hei No. Hei No. Hei No. Hei. No. Hei. No. Hei. No. Hei. The compound described in JP-A-2005-166637, and the like. Preferred among these are hexacyanobutadiene, hexacyanobenzene, tetracyanoethylene, cyanogen, dimethyl carbonitrile, tetrafluorotetracyanoquinone, dimethyl ketone, and p-flu0ranil. Tetra-p-benzoquinone (p_chl〇ranii), tetrabromo-p-benzoquinone 32 201132229 (P-bn^nil), p-benzene, 2,6_di-p-benzoquinone, 2,5-dichlorobenzene, 1 , 2,4,5-tetracyanobenzene, [,4_dicyanotetrafluorobenzene, 2,3-dichloro-5,6-diaminobenzoquinone, p-dinitrobenzene, methylene Stupid, adjacent two-stone Schottky Benzene, M_Cai Brew, 2,3-D-Naphthalene Boat, Dinitronaphthalene, Dinitronaphthalene, 9 Nasal Onion, 1,3,6,8-Tetranitro (IV), 2, 4, 7_ three cranes (four), 2, 3, 5, 6_ four nitrogen based bites, or rich _ C6G, more preferably hexacyanobutadiene, hexacyanobenzene, tetracyanoethylene, Tetracyano-p-dioxane, tetrafluorotetracyano-p-dioxane, tetrafluoro-p-benzene, four-gas-to-benzene, four-diy, 2,6-di-p-benzoquinone, 25-di, benzene Stuffed, 2'3·dichloronaphthalene, • tetracyanobenzene, &amp; dichlorinated benzene, or 2,3,5,6-tetracyano, especially tetrafluorotetrazide Stir-fry. These electron accepting dopants may be used singly or in combination of two or more. The amount of the electron-accepting dopant used varies depending on the type of the material, and is preferably G Q1 wt% to 5 Qwt%, more preferably 0.05 wt% to 2 wt%, relative to the hole transport layer material. The most good one is 〇"wt%~1〇wt%. The thickness of the hole injection layer and the hole transport layer is preferably 500 nm or less from the viewpoint of lowering the driving voltage. The thickness of the hole transport layer is preferably from 1 nm to 500 nm, more preferably from 5 nm to 200 nm, and even more preferably from 1 〇 nm to 1 〇〇 nm. Moreover, the hole/main entrance layer is preferably 〇1 nm to 2 〇〇 nm, more preferably 〇5 nm 〜10 〇 nm, and more preferably 1 nm to 100 nm. Hole injection layer The hole transport layer may be a single layer structure composed of one or more of the above materials, or a multilayer structure composed of a plurality of layers of the same composition or different types. 33 201132229 (Electron injection layer, electron transport layer) The two-input layer and the electron transport layer are layers having a function of receiving electrons from the cathode or the cathode side and transmitting them to the anode side. Preferably, at least one of the layers adjacent to the luminescent layer is a sub-transport layer. Further, it is preferable to form an electron transport layer by a liquid containing two or more kinds of electron transport materials. By mixing two or more kinds of compounds, it is possible to provide a coating type electron injecting layer which is excellent in electron injectability from a cathode and excellent in electron injectability into a light emitting layer. The difference in electron affinity between the two or more types of electron transport (4) is preferably 〇.1~above 6.6^乂', and more preferably 〇2~above〇5~5. Specifically, a layer containing a compound such as a pyridine derivative, a ruthenium derivative, a caffeine derivative, a bisazine derivative, a diazaxan derivative, a phenanthroline derivative, a triazine derivative, or the like is preferable. a triazole derivative, an oxazole derivative, an oxadiazole derivative, an imidazole derivative, a ketone derivative, a quinodimethane derivative, an anthrone derivative, a biphenyl hydrazine derivative, a thiofuran derivative, a metal complex of a carbodiimide derivative, a decylene methane derivative, a stilbene pyrazine derivative, a naphthyl, anthracene, etc., an aromatic ring of a tetramine acid, a phthalocyanine derivative, and a hydroxyquinoline derivative Or an organic decane derivative represented by a metal complex represented by a metal phthalocyanine, a metal complex represented by benzoxazole or benzothiazole, and a silole, etc. The electron injecting layer or the electron transporting layer of the organic EL element may contain an electron-donating dopant. As an electron-donating dopant introduced into the electron-injecting layer, the electron-donating dopant may have an electron-donating organic compound. The nature of the reduction can be 'suitable Using a metal such as Li, 34 201132229 —, —, —, ν_ΤΜΑΧ g # alkaline earth metal, a transition metal containing a rare earth metal, a reducing organic compound, etc. As the metal, particularly suitable (4) a metal having a work function of 4 2 ev or less 'Specifically, Li, Na, K, Be, Mg, Ca, =, 丫, (, (: 5 七, ^, (} (1 and %, etc.), and examples of the reducing organic compound include Ut compound, sulfur-containing compound, compound-containing compound, etc. In addition, Japanese Patent Laid-Open No. Hei 6-212153, Japanese Patent Laid-Open No. 2000-196140, Japanese Patent Laid-Open No. Hei No. Hei. The materials described in Japanese Patent Laid-Open No. Hei 2-342614, etc. The electron-donating dopants may be used singly or in combination of two or more. The amount of electron-donating dopants used is due to materials. Depending on the type of material, it is preferably from 1 wt% to 99 wt%, more preferably from 1.0 wt% to 80 wt%, particularly preferably from 2 〇 wt% to 7 〇%%. From the viewpoint of lowering the driving voltage, it is preferred that the electron injection layer, electron transfer The thickness of the layer is respectively below 500 nm. The thickness of the electron transport layer is preferably 1 nm to lake nm, more preferably 200 nm, and even more preferably 1 〇 nm to 1 〇〇. The thickness is preferably 0.1 nm to 200 nm, more preferably 0.2 to 100 nm, and even more preferably 0.5 to 50 nm. The V human layer and the electron transport layer may be one or two of the above materials. The single-layer structure formed by the treatment may also be a layer structure composed of a plurality of layers composed of the same composition or different species. (Break barrier layer) The electric/coherent barrier layer has a function of preventing transmission from the anode side to the light emission. Layer hole 35 201132229 Layer through the function of the cathode side. In the present invention, a hole blocking layer may be provided as an organic compound layer adjacent to the light-emitting layer on the cathode side. Examples of the compound constituting the hole-blocking layer include bis(2-fluorenyl) phenyl group (seeking salt) chain-specific complex, tris-salt derivative, 2,9-dimethyl--4 a phenanthroline derivative such as 7-diphenyl-l,l-morphine or the like. The thickness of the hole resistance layer is preferably 1 nm to 500 nm, more preferably 5 to 200 legs, and more preferably 1 to 11111 to 1 gland. The hole blocking layer may be a single layer structure composed of one or more of the above materials, or a multilayer structure composed of a plurality of layers of the same composition or different types. (Electron barrier layer) The electron blocking layer is a layer having a function of preventing electrons transmitted from the cathode side to the light-emitting layer from passing through the anode side. In the present invention, an electron-resistant layer may be provided as an organic compound layer adjacent to the light-emitting layer. As an example of the compound constituting the electron blocking layer, for example, the compounds exemplified above as the hole transporting material can be applied. The thickness of the electron blocking layer is preferably from 1 nm to 500 nm, more preferably m 2 〇〇 nm, still more preferably from 10 〜 nm to l 〇〇 nm. The barrier layer may be composed of one or more of the above materials: 曰, , . The structure ' can also be a multilayer structure composed of the same or different groups. (Purification of the material) The material of the organic layer of the pure organic light-emitting element is preferably a material used. More preferably, at least one of the above-mentioned materials is made by a zone melting method. If the material of the membrane method is purified, there is a case where the performance of the element is lowered.曰 by sublimation for the present use: the combination of the purification method and the wet film forming method of the domain slewing method, the combination of the effect and the effect can be achieved, and the durability = H is at least one m material is achieved by the band An organic electroluminescent device produced by wet film deposition/fabrication. , the soil is sprayed) layered; the material can be formed by the domain melting method purification purification temperature compared to the material = in the band process temperature is usually closer to the band melting lower. The material which is well coated and purified by the zone melting method is used. If the film is equipped with mm, the luminous efficiency of the organic electroluminescent device is improved, and the material: = 2 is preferably in the range of 1 〇〇 t to 400 ° c. Further, the host material, the charge transporting material, the host material, and the j material are more preferably a π-caloric derivative, an arylamine derivative or a metal complex. (Protective layer) # 3!!: People can also protect the entire organic EL element by a protective layer. The material contained in the protective layer may be a material having a function of preventing substances such as moisture or oxygen from deteriorating into the element. Specific examples thereof include metals such as In, Sn, Pb, Au, Cu, Ag, and Ti, Ni, such as MgO, Si0, Si〇2, Ai2〇3, Ge0, Ni〇, Ca〇, BaO, and Fe2〇3. Metal oxides such as y2〇3, Ti02, metal nitrides such as SiNx and siNx〇y, metal fluorides such as MgFz, LiF, AIF3, and CaF2, polyethylene, polypropylene, polymethyl methacrylate, and poly Amine, polyurea, polytetrafluoroethylene, polygas trifluoroethylene, polydifluoroethylene, copolymer of chlorotrifluoroethylene and dichlorodifluoroethylene, tetrafluoroethylene and a single comprising at least one comonomer A copolymer obtained by copolymerizing a bulk mixture, a fluorine-containing copolymer having a cyclic structure in a copolymerization main chain, a water-absorbent substance having a water absorption ratio of 1% or more, a moisture-proof substance having a water absorption ratio of 0.1% or less, or the like. The method for forming a protective layer is not particularly limited, and examples thereof include a vacuum smear method, a weaving method, a reactive bismuth ore method, an MBE (molecular beam smear), a 3 = beam method, an ion plating method, and a money polymerization method. (High-frequency wave excitation-off plasma chemical vapor deposition method, laser chemical vapor deposition method, j-phase phase deposition method, gas chemical vapor deposition method, coating method, transfer method. (Sealing) Element S: ί ί ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ Phlegm, fluorination, chlorination, magnesium chloride, chloranil/smelly dance, desertification mites, molecular sieves, buddha, 38 201132229 i oxygen (four) and scaly mosquitoes, examples of enumerated money liquid heart sarcophagus Class, perfluorodecyl or chlorine-based solvents and polymers from (silleQne=/_4l_, 1 2 and free of use and use: by using cerium oxide, cerium oxide, cerium lanthanum, cerium oxyhydroxide, oxidizing button Hope + hi... 7 Resin, epoxy resin, 1 machine (4) or use acrylic resin to touch (4) ride the dense method.糸 (in, sealing agent) 八 f: The sealing adhesive used in the Ming has a function of preventing moisture or milk from infiltrating from the end. &lt;Material&gt; The material of the sealing adhesive can be used with the resin The same material as the sealing layer. Among them, a preferred 疋% oxygen-based adhesive is preferred from the viewpoint of moisture prevention, and among them, a photo-curing type thermosetting adhesive is preferred. It is also preferable to add a filler. The filler to be added to the sealant is preferably an inorganic material such as Si〇2, SiO (Oxidized Oxide), SiON (Nitrox Oxide) or siN (Nitrix). The viscosity of the sealant can be increased, the processing suitability can be improved, and the moisture resistance can be improved. <Formulation of Sealing Adhesive> - The polymer composition and the concentration sealing adhesive are not particularly limited, and the above can be used. Said adhesive. 39 201132229

例如光硬化型環氧系接著劑可列舉Nagase chemteXFor example, a photocurable epoxy-based adhesive can be exemplified by Nagase chemteX.

Corporation 製造之 XNR5516。 •厚度 密封接著劑之塗佈厚度較佳的是丨μιη以上丨mm以 1。若較其薄,則變得不能均自塗佈密封接著劑。而且, 若較其厚,則水分滲入之通路變寬而欠佳。 &lt;密封方法&gt; 立3於本發明中,可藉由分注器(出叩咖沉)等而塗佈任 意量之上述密封接著劑,於塗佈後疊合第2基板,使其硬 化而獲得功能元件。 (驅動) 本發明之有機EL元件藉由於陽極與陰極之間施加直 流(亦可視需要包含交流電成分)電壓(通常為2伏特〜 b伏特)或直流電流,可獲得發光。 關於本發明之有機EL元件之驅動方法,可適用曰本 專利特開平2-148687號、日本專利特開平6_期355號、 。日本專利制平5_29刪號、日本專利特開平'η伽 號、日本專利特时8_234685冑、日本專利特開平 8-241〇47號之各公報、日本專利第278號、美國專利 5828429號、美國專利6〇233〇8號之各說明書等中記 驅動方法。 本發明之發光元件可藉由各種公知之想法而提高光出 射效率。f列如,可藉由加工基板表面形狀(例如形成微細 之凹凸圖案)’控制基板、IT〇層、有機層之折射率,控制 201132229 ,而提向光的出射效率、 陽極側射出發光的所謂頂 基板、ITO層、有機層之厚度 提高外部量子效率。 本發明之發光元件亦可為自 部發光方式。 本發明中之有機m 於透明基板上疊合而具有共振器結構。例如, 成之多層膜鏡面、⑽ΐ 率不同之多個積層膜所構 二=二極,及 _ 板而於其狀覆進行反射而=鏡面與金屬作為反射 於其他幢m於透縣板上,翻或半透明 電極與金屬電極分別作為反射板㈣揮魏 於制反㈣行反射料振。為了形成共振結構, 將由個反驗之核折料、反射㈣各層之折射率與 厚度而決定之光徑長度娜為獲得所雛之共振波長的最 佳值帛1態樣之情$時的計算式在例如日本專利特開平 9-180883號公報中有所記載。第2態樣之情形時的計算式 在例如日本專利特開2004-127795號公報中有所記載。 作為使有機EL顯示器成為全彩型的方法,例如於「顯 示器月刊」、2000年9月號、第33頁〜第37頁中記載的 那樣,已知有:將分別發出與色之3原色(藍色(B)、綠 色(G)、紅色(R))對應之光的有機EL元件配置於基板 上的3色發光法;使白色發光用有機El元件之白色發光 通過彩色濾光片而分為3原色之白色法;使藍色發光用有 機EL元件之藍色發光通過螢光色素層而轉換為紅色(R) 41 201132229 及綠色(G)的色彩轉換法等。 而且,將藉由上述方法而所得之不同之發光色的有機 EL元件多個組合使用,藉此可獲得所期 型光源。例如,將藍色及黃色之發光元件組^成的白色 發光光源,將藍色、綠色、紅色之發光元件組合而成的白 色發光光源等。 (應用) 本發明之錢EL元件及製造方法可應歸包含數位 靜態相機之顯示H、行動電話顯示器、個人數位助理 (PDA)電細顯不器 '汽車之信息顯示器、電視監視器(τν momtor)或者一般照明之範圍廣泛之領域中。 (顯示裝置) 其次,參照圖2對本發明之實施形態之顯示加以 說明。 圖2是概略性表示本發明之實施形態之顯示裝置之一 例之剖面圖。 士圖所示本發明之貫施形態之顯示裳置2〇包含透 明基板(支撐基板”、有機EL元件1〇、密封二器16等 有機EL兀件10是於基板2上順次 電極”、有機層u、陰極(第二電極)9而:=, 另外於上經由接 置有密封容器16。另外,省略了各電極Μ 之一部为、隔板、絕緣層等。 此處,接著層Μ較佳的是㈣述贿接著劑所構成之 42 201132229 層。 此種顯示裝置20是將與基板2之陽極3相反侧之面作 為顯示面’顯示來自有機EL元件10之發光。~ ^作 (照明裝置) 、其次,參照圖3對本發明之實施形態之照明裝置加以 說明。 圖3是概略性表示本發明之實施形態之照明 之一 例的剖面圖。 ' &amp; 本發明之實施形態之照明裝置40如圖3所示那樣包含 ^之有機EL元件1〇、光散射部件3〇。更具體而言,以 有機EL το件10之基板2與光散射部件3〇 構成照明裝置40。 ^ '光政射邛件30若可散射光則並無特別之限制,於圖3 中為於透月基;^ 31分散有微粒子32之部件。透明基板31 例如可適且列舉玻璃基板。微粒子32可適宜列舉透明樹脂 微,子玻璃基板及透明樹脂微粒子均可使用公知之玻璃 基板及透明樹脂微粒子。此種照明裝置4Q若使來自有機 EL元件1〇之發光入射至光散射部件扣之光入射面3〇A, 則可藉由光散射部件3〇而使入射光散射,使散射光作為照 明光而自光出射面3〇B出射。 實例 以下列舉實例對本發明加以更具體的說明。以下之實 例中所示n觸、物f量及其比例、操作等只要不 偏離本發明之主旨則可加以適宜變更。因此,本發明之範 43 201132229 圍並不受以下具體例之限制。 (塗佈液之調製) 添加20 wt%之預先減壓乾燥(2〇〇°cxl小時、ο ι大 氣壓)之分子篩4A/8x,放置1小時。於經氮氣置換之手 套箱(露點為_68度、氧濃度為10 ppm)内,進行利用了 氮發泡之脫氧處理’進行過濾器(孔徑為0.2 μιη、ρΤΙΈ 薄膜過濾器)處理,藉此調製塗佈液。 (噴塗機) 將氮(純度為99.9%、露點為_4(rc以下)作為供給源, 經由氣體過濾器:SFB100-02 (SMC股份有限公司之產品 名)而連接在設置於手套箱(露點為_45。〇、氧濃度為刈 ppm)内的喷塗機上。 [實例1] 將具有氧化銦錫(略記為ITO)蒸鑛層之玻璃基板 (Geomatec股份有限公司製造、表面電阻為1〇以口:尺 寸:0.5 mm厚、2.5 cm見方)放入至清洗容器中於 丙醇中進行超音波清洗後’進行30分鐘之uv_臭氧處理。 於透明陽極上,藉由喷霧法依序設置下述層。另外 &lt;於久 層之形成中’將氣溶勝之载體氣赌為^,將載體氣 量設為1 L/min。而且’將魏射錢體好的粒徑設定 為 1 μιη。 ⑴電洞傳輸層(5Gnm):藉由対法,將下述電 洞傳輸材料1及電洞傳輸材料2 (重量比·· 5〇/5〇)之一 _ 曱烧溶液(固形物濃度:lwt%),以所得之電洞 201132229 厚,成為50 rnn之量,塗佈於透明陽極上之後,於7〇乞下 進仃1小時之真空乾燥。另外’電洞傳輸材料1及電洞傳 輸材料2可使用藉由昇華純化進行了純化之材料。電洞傳 輸材料1與電洞傳輸材料2之游離電位之差XNR5516 manufactured by Corporation. • Thickness The coating thickness of the sealing adhesive is preferably 丨μηη or more 丨mm to 1. If it is thinner, it becomes impossible to apply the sealing adhesive uniformly. Further, if it is thicker, the passage through which moisture penetrates becomes wider and is less preferable. &lt;Sealing Method&gt; In the present invention, any amount of the above-mentioned sealing adhesive can be applied by a dispenser or the like, and the second substrate is laminated and hardened after coating. And get the functional components. (Drive) The organic EL device of the present invention can emit light by applying a DC (which may optionally contain an alternating current component) voltage (usually 2 volts to b volts) or a direct current between the anode and the cathode. The driving method of the organic EL element of the present invention can be applied to Japanese Patent Laid-Open No. Hei 2-148687, Japanese Patent Laid-Open No. Hei. Japanese Patent Laid-Open No. 5_29, Japanese Patent Unexamined Patent No. 8-234685, Japanese Patent Laid-Open No. 8-241-47, Japanese Patent No. 278, US Patent No. 5828429, USA The driving method is described in each specification of the patent No. 6〇233〇8. The light-emitting element of the present invention can improve the light-emitting efficiency by various well-known ideas. In the case of f, it is possible to control the refractive index of the substrate, the IT layer and the organic layer by controlling the surface shape of the substrate (for example, forming a fine concavo-convex pattern), and control the emission efficiency of the light and the emission of the light on the anode side by controlling 201132229. The thickness of the top substrate, the ITO layer, and the organic layer increases the external quantum efficiency. The light-emitting element of the present invention may also be a self-luminous light source. The organic m in the present invention has a resonator structure by being superposed on a transparent substrate. For example, a multi-layered mirror surface, (10) a plurality of laminated films having different enthalpy ratios, two=two poles, and a _ plate, which are reflected in a shape thereof, and a mirror surface and a metal are reflected on other buildings on the plate. The turned or semi-transparent electrode and the metal electrode are respectively used as a reflecting plate (four) to suppress the (four) row of reflected material vibration. In order to form a resonant structure, the length of the optical path determined by the refraction of the core and the reflection (4) of the refractive index and thickness of each layer is calculated as the optimum value of the resonance wavelength of the chick. The formula is described in, for example, Japanese Laid-Open Patent Publication No. Hei 9-180883. The calculation formula in the case of the second aspect is described in, for example, Japanese Laid-Open Patent Publication No. 2004-127795. As a method of making the organic EL display a full-color type, for example, as described in "Monitoring Monthly", September 2000, pages 33 to 37, it is known that the primary colors of the colors are respectively emitted ( A three-color luminescence method in which an organic EL element of light corresponding to blue (B), green (G), and red (R) is disposed on a substrate; and white luminescence of an organic EL element for white luminescence is passed through a color filter The white method of the three primary colors; the blue light emission of the organic EL element for blue light is converted into red (R) 41 201132229 and the color conversion method of green (G) by the fluorescent pigment layer. Further, a plurality of organic EL elements of different luminescent colors obtained by the above method are used in combination, whereby a desired light source can be obtained. For example, a white light-emitting source in which blue and yellow light-emitting elements are combined, and a white light-emitting source in which blue, green, and red light-emitting elements are combined. (Application) The EL element and the manufacturing method of the present invention can be included in the display of a digital still camera, a mobile phone display, a personal digital assistant (PDA), a fine display device, an information display of a car, a television monitor (τν momtor) ) or in a wide range of general lighting areas. (Display device) Next, a display of an embodiment of the present invention will be described with reference to Fig. 2 . Fig. 2 is a cross-sectional view schematically showing an example of a display device according to an embodiment of the present invention. In the display of the present invention, the display of the present invention includes a transparent substrate (support substrate), an organic EL element 1 , an organic EL element 10 such as a sealing device 16 , and a sequential electrode on the substrate 2 , organic The layer u and the cathode (second electrode) 9 are replaced by a sealed container 16. Further, one of the electrodes 省略 is omitted, a separator, an insulating layer, and the like. Preferably, the layer 42 201132229 is composed of a brix adhesive. The display device 20 displays the light from the organic EL element 10 as a display surface on the side opposite to the anode 3 of the substrate 2. A illuminating device according to an embodiment of the present invention will be described with reference to Fig. 3. Fig. 3 is a cross-sectional view schematically showing an example of illumination according to an embodiment of the present invention. '&amp; illuminating device according to an embodiment of the present invention 40, as shown in Fig. 3, the organic EL element 1 and the light-scattering member 3A are included. More specifically, the substrate 2 of the organic EL τ 10 and the light-scattering member 3 〇 constitute the illuminating device 40. ^ 'Guangzheng If the firing element 30 can scatter light, there is no special The limitation is as shown in Fig. 3, which is a component of the microparticles 32. The transparent substrate 31 may, for example, be a glass substrate. The microparticles 32 may suitably be a transparent resin micro, a sub-glass substrate, and a transparent resin microparticle. A known glass substrate and transparent resin fine particles can be used. When the illumination device 4Q causes the light emitted from the organic EL element 1 to enter the light incident surface 3A of the light-scattering member, the light-scattering member 3 can be used. The incident light is scattered, and the scattered light is emitted as illumination light from the light exit surface 3〇B. EXAMPLES Hereinafter, the present invention will be more specifically described by way of examples. The n-touch, the amount of material f and its ratio, operation are shown in the following examples. The present invention can be suitably modified as long as it does not deviate from the gist of the present invention. Therefore, the present invention is not limited to the following specific examples. (Modulation of coating liquid) 20 wt% of pre-decompression drying is added (2分子°cxl hour, ο ι atmospheric pressure) molecular sieve 4A/8x, placed for 1 hour. In a nitrogen-substituted glove box (with a dew point of _68 degrees, oxygen concentration of 10 ppm), nitrogen foaming was utilized. The deoxidation treatment is carried out by a filter (pore size: 0.2 μm, ρΤΙΈ membrane filter) to prepare a coating liquid. (Mapping machine) Nitrogen (purity of 99.9%, dew point of _4 (rc or less) as a supply source) It is connected to a sprayer installed in a glove box (with a dew point of _45. 〇, oxygen concentration 刈ppm) via a gas filter: SFB100-02 (product name of SMC Co., Ltd.) [Example 1] A glass substrate (manufactured by Geomatec Co., Ltd., surface resistance of 1 〇 mouth: size: 0.5 mm thick, 2.5 cm square) having a vaporized layer of indium tin oxide (abbreviated as ITO) was placed in a cleaning vessel in propanol After performing ultrasonic cleaning in the 'after 30 minutes of uv_ ozone treatment. On the transparent anode, the following layers were sequentially placed by a spray method. In addition, &lt;in the formation of the long layer, the carrier gas of the gas-melting victory is gamified as ^, and the carrier gas volume is set to 1 L/min. Moreover, the particle size of the Wei shot body is set to 1 μιη. (1) Hole transport layer (5Gnm): One of the following hole transport material 1 and hole transport material 2 (weight ratio · 5 〇 / 5 〇) by the 対 method _ 曱 溶液 solution (solid concentration: Lwt%), the obtained hole 201132229 was thick and became 50 rnn. After being applied to a transparent anode, it was vacuum dried at 7 Torr for 1 hour. Further, the material of the hole transporting material 1 and the hole transporting material 2 can be purified by sublimation purification. The difference between the free potential of the hole transporting material 1 and the hole transporting material 2

eV ° P (2) 發光層(40 nm):藉由噴霧法,將以% : 5之 重1比含有主體材料1 : CDBP及發光材料丨:化合物A 之二曱苯溶液(固形物濃度:0.6 wt%),以所得之發光層 之厚度成為40 nm之量,塗佈於電洞傳輸層上之後,於 100 C下進行1小時之真空乾燥。另外,主體材料^及發光 材料1分別使用藉由昇華純化而進行了純化之材料。 (3) 電子傳輸層(30 nm):將基板並不暴露於大氣 中地安裝於真空蒸鍍裝置中。而且,將BAlq放入至鉬製 電阻加熱晶舟中,將其安裝於真空紐裝置中,將真空槽 減壓至4xlG.4 Pa。其後,騎述晶舟進行通電而加熱,以 0.2nm/sec之蒸鍍速度將BAlq蒸鍍於所述發光層上,形成 膜厚為30 nm之電子傳輸層。 j4)電子注入層(1 nm):藉由真空蒸鍍法,使LiF 以所得之電子注入層之厚度成為 1 nm之量而堆積於電子 傳輸層上。 ^5)陰極(100nm):藉由真空蒸鍍法,使鋁(A1) 以所得之陰極之厚度成為1〇〇 nm之量而堆積於電子注入 層上。 將所製作之積層體放入至經氬氣替換之手套箱内,使 45 201132229 用不鏽鋼製之密封罐及紫外線硬化型接著劑(Nagase ChemteX Corporation製造之XNR5516)進行密封,藉此 而製作實例1之有機EL元件。 [實例2、實例3及比較例1〜比較例2] 於實例1中’將電洞傳輸層之電洞傳輸材料1及電洞 傳輸材料2之重量比變換為表1中記載之比例,除此之外 進行與實例1同樣之步驟,藉此形成實例2、實例3及比 較例1〜比較例2之有機EL元件。 [比較例3] 於實例1中,將電洞傳輸層替換為以下之電洞傳輸 層,除此之外進行與實例1同樣之步驟,藉此形成比較例 3之有機EL元件。 (1)電洞傳輸層(50 rnn):將基板不暴露於大氣中 地安裝於真空蒸鍍裝置中。而且,於鉬製電阻加熱晶舟中 刀別δ又置電洞傳輸材料1與電洞傳輸材料2。將真空槽減 壓至4x10 5 pa後,對所述晶舟進行通電而加熱,將蒗鍍速 度調整為電洞傳輸材料1與電洞傳輸材料2之重量比成為 50 : 50,蒸鍍於所述基板上,形成膜厚為5〇nm之電洞傳 輸層。 [比較例4] 於實例1中,將電洞傳輸層替換為以下之電洞傳輸 層’除此之外進行與實例丨同樣之步驟,藉此形成比較例 4之有機EL元件。 (1)電洞傳輸層(50 nm):藉由旋塗法,將下述電 46 201132229 ---洞傳輸材料1及電洞傳輸材料2 (重量比:50/50)之二氣 曱烷溶液(固形物濃度:1 wt%),以所得之電洞傳輸層之 厚度成為50 nm之量而塗佈於透明陽極上,然後於70°C下 進行1小時之真空乾燥。另外,電洞傳輸材料1及電洞傳 輸材料2使用藉由昇華純化進行了純化之材料。 [化1]eV ° P (2) Luminescent layer (40 nm): by spraying, the ratio of %: 5 is 1 to contain the main material 1: CDBP and luminescent material 丨: Compound A in diphenylbenzene solution (solid concentration: 0.6 wt%), the thickness of the obtained light-emitting layer was 40 nm, and after coating on the hole transport layer, vacuum drying was performed at 100 C for 1 hour. Further, the host material and the luminescent material 1 were each purified by sublimation purification. (3) Electron transport layer (30 nm): The substrate was mounted in a vacuum evaporation apparatus without being exposed to the atmosphere. Further, BAlq was placed in a molybdenum electric resistance heating boat, installed in a vacuum unit, and the vacuum chamber was depressurized to 4 x 1 G.4 Pa. Thereafter, the boat was heated by electric current, and BAlq was vapor-deposited on the light-emitting layer at a vapor deposition rate of 0.2 nm/sec to form an electron transport layer having a film thickness of 30 nm. J4) Electron injection layer (1 nm): LiF was deposited on the electron transport layer by a vacuum deposition method so that the thickness of the obtained electron injecting layer became 1 nm. ^5) Cathode (100 nm): Aluminum (A1) was deposited on the electron injecting layer by a vacuum evaporation method so that the thickness of the obtained cathode became 1 〇〇 nm. The produced laminate was placed in a glove box replaced with argon gas, and 45 201132229 was sealed with a stainless steel sealed can and an ultraviolet curing adhesive (XNR 5516 manufactured by Nagase ChemteX Corporation), thereby producing Example 1 Organic EL element. [Example 2, Example 3, and Comparative Example 1 to Comparative Example 2] In Example 1, 'the weight ratio of the hole transporting material 1 and the hole transporting material 2 of the hole transporting layer was changed to the ratio described in Table 1, except The procedure similar to that of Example 1 was carried out, whereby the organic EL elements of Example 2, Example 3, and Comparative Example 1 to Comparative Example 2 were formed. [Comparative Example 3] The same procedure as in Example 1 was carried out except that the hole transport layer was replaced with the following hole transport layer in Example 1, whereby the organic EL device of Comparative Example 3 was formed. (1) Hole transport layer (50 rnn): The substrate was mounted in a vacuum evaporation apparatus without being exposed to the atmosphere. Further, in the molybdenum resistance heating wafer boat, the hole transporting material 1 and the hole transporting material 2 are placed. After depressurizing the vacuum chamber to 4×10 5 pa, the wafer boat is energized and heated, and the crucible plating speed is adjusted so that the weight ratio of the hole transporting material 1 to the hole transporting material 2 becomes 50:50, and vapor deposition is performed. On the substrate, a hole transport layer having a film thickness of 5 〇 nm was formed. [Comparative Example 4] The same procedure as in Example 进行 was carried out except that the hole transport layer was replaced with the following hole transport layer in Example 1, whereby the organic EL device of Comparative Example 4 was formed. (1) Hole transport layer (50 nm): by spin coating, the following electricity 46 201132229 --- hole transport material 1 and hole transport material 2 (weight ratio: 50/50) dioxane The solution (solid content concentration: 1 wt%) was applied to a transparent anode in such a manner that the thickness of the obtained hole transport layer became 50 nm, followed by vacuum drying at 70 ° C for 1 hour. Further, the hole transporting material 1 and the hole transporting material 2 are materials which have been purified by sublimation purification. [Chemical 1]

QQ

δ 電洞傳輸材料2 (I ρ = 5. 8 Θ V) 電洞傳輸材料1 (I p = 5. 4 β V) f\ BAIqδ hole transport material 2 (I ρ = 5. 8 Θ V) hole transport material 1 (I p = 5. 4 β V) f\ BAIq

CDBPCDBP

化合物A (有機EL元件之評價) 以下述之評價標準評價所得之實例及比較例之有機 EL元件。將評價結果示於表1。 47 201132229 ---- &lt;發光效率&gt; 源量製作之有機EL·元件,使用KEITHLEY製造之電 24〇〇型,對發光元件施加直流電壓,使其以 1 υυυ cd/in2 夕古由 SR3、、^ 冗度發光。使用TOPCON公司製造之亮度計 战^彳定其發射光譜與光量,根據發射光譜、光量與測定 時之電流計算外部4子效率。 &lt;驅動電壓&gt; 馮旦對=製作之有機EL元件,使用KEITHLEY製造之電 H測單&amp;2_型’對發S元件施加直流電壓,將發光亮 IGOOed/m2之電壓評價為驅動電壓。 &lt;耐久性&gt; 、、/§ θ對所製作之有機EL元件,使用製造之電 =測單元24G0型,對發光元件施加直流電壓,於初始亮 又·、、、:I000&gt;cd/m之條件下進行連續驅動試驗。將亮度減半 =時間(亮度成為5GG ed/m2之時間)作為耐久時間而求 出’將比較例1之值設為W,分別以其相對值進行記載。 48 201132229 [表i] 表1 電洞傳輸材料 1 濃度(wt%) 電洞傳輸材料 2 濃度(wt%) 製 外部量子效 率(%) 驅動電壓 (V) 亮度減 半時間 實例1 50 50 15.3 7.3 1.6 實例2 30 70 喷 14.8 8.0 1.4 實例3 70 30 13.1 8.1 1.5 比較例 1 100 0 噴^S' 5.7 9.6 1.0 比較例 2 0 100 噴^S 9.8 9.5 0.67 比較例 3 50 50 a 10.2 8.8 1.1 比較例 4 50 50 你 —— 々疋莖 10.2 9.5 1.0 [實例4〜實例6及比較例s〜比較例6] 於實例1中,將電洞傳輸材料替換為表2中記載之電 洞傳輸材料3及電洞傳輸材料4,變換為表2之比例,除 此之外進行與實例丨同樣之步驟,藉此形成實例4〜實例6 以相=分===半時間,將比較例5之值設為w [比較例7] 於比較例3令,將電洞傳輸材料替換 電洞傳輸材料3及電洞傳輸材料4此:^ &amp;載之 例3同樣之步驟,ϋ此形成比較例7之^卜進行與比較 〈有機EL元件。 49 201132229 [比較例8] 電將電洞物料替換為表™ 兔刚】材料3及電洞傳輸材料4,除此之外進行與比較 例4同樣之步驟,藉此形成比較例8之有機EL元件。 [化2]Compound A (Evaluation of Organic EL Element) The obtained organic EL element of the examples and the comparative examples were evaluated by the following evaluation criteria. The evaluation results are shown in Table 1. 47 201132229 ---- &lt;Luminous efficiency&gt; The organic EL element produced by the source is made of a 24 〇〇 type manufactured by KEITHLEY, and a DC voltage is applied to the light-emitting element so that it is 1 υυυ cd/in2 by the SR3 , , ^ illuminate with redundancy. Using the brightness meter manufactured by TOPCON, the emission spectrum and amount of light are determined, and the external 4 sub-efficiency is calculated based on the emission spectrum, the amount of light, and the current measured. &lt;Drive voltage&gt; Feng Dan pair = fabricated organic EL device, using the electric H test sheet &amp; 2_type manufactured by KEITHLEY to apply a DC voltage to the S element, and evaluate the voltage of the illuminating IGOOed/m2 as the driving voltage . &lt;Durability&gt;, /§ θ For the produced organic EL device, a DC voltage was applied to the light-emitting device using the manufactured electric=measurement unit 24G0 type, and the initial light was turned on, and, I000&gt;cd/m The continuous driving test was carried out under the conditions. The luminance is halved = time (the time when the luminance becomes 5GG ed/m2) is obtained as the endurance time. The value of the comparative example 1 is referred to as W, and the relative value is described. 48 201132229 [Table i] Table 1 Hole transport material 1 Concentration (wt%) Hole transport material 2 Concentration (wt%) External quantum efficiency (%) Drive voltage (V) Luminance halving time Example 1 50 50 15.3 7.3 1.6 Example 2 30 70 Spray 14.8 8.0 1.4 Example 3 70 30 13.1 8.1 1.5 Comparative Example 1 100 0 Spray ^S' 5.7 9.6 1.0 Comparative Example 2 0 100 Spray ^S 9.8 9.5 0.67 Comparative Example 3 50 50 a 10.2 8.8 1.1 Comparative Example 4 50 50 You - stolon 10.2 9.5 1.0 [Example 4 to Example 6 and Comparative Example s ~ Comparative Example 6] In Example 1, the hole transport material was replaced with the hole transport material 3 described in Table 2 and The hole transporting material 4 was converted to the ratio of Table 2, except that the same steps as in Example 进行 were carried out, thereby forming Examples 4 to 6 with phase = minute === half time, and the value of Comparative Example 5 was set. w [Comparative Example 7] In Comparative Example 3, the hole transporting material was replaced with the hole transporting material 3 and the hole transporting material 4, and the same procedure as in Example 3 of Example 3 was carried out, thereby forming Comparative Example 7. ^Bu conduct and compare <organic EL elements. 49 201132229 [Comparative Example 8] The same procedure as in Comparative Example 4 was carried out except that the material of the hole was replaced with the material TM and the hole transporting material 4, thereby forming the organic EL of Comparative Example 8. element. [Chemical 2]

電洞傳輸材料3 (lp=5.4eV)Hole transmission material 3 (lp=5.4eV)

電洞傳輸材料4 〇P=5. 7eV) [表2] 表2 ΐ洞傳輸材料 3 濃度(wt%) 電洞傳輸材料 4 濃度(wt%) 製膜法 外部量子 效率(°/〇) 驅動電壓 (V) 亮度減半 時間 實例4 50 50 喷塗 13.2 6.8 2.3 實例5 30 70 喷塗 12.9 7.2 2.2 實例6 70 30 喷塗 12.7 7.3 2.1 比較例5 100 0 喷塗 6.3 8.8 1.0 比較例6 0 100 喷塗 8.7 9.0 0.9 比較例7 50 50 蒸鍍 9.8 7.0 1.7 比較例8 50 50 旋塗 9.5 9.4 1.2 [實例7] 於實例1中,將電洞傳輸材料1及電洞傳輸材料2替 換為下述電洞傳輸材料1及電洞傳輸材料5,除此之外進 201132229 行與實例1同樣之步驟,藉此形成實例7之有機el元件。 電洞傳輸材料1與電洞傳輸材料5之游離電位之差:ΛΙρ 為 0.2 eV。 [化3]Hole transport material 4 〇P=5. 7eV) [Table 2] Table 2 Cavity transport material 3 Concentration (wt%) Hole transport material 4 Concentration (wt%) Film-forming method External quantum efficiency (°/〇) Drive Voltage (V) Luminance halving time Example 4 50 50 Spraying 13.2 6.8 2.3 Example 5 30 70 Spraying 12.9 7.2 2.2 Example 6 70 30 Spraying 12.7 7.3 2.1 Comparative Example 5 100 0 Spraying 6.3 8.8 1.0 Comparative Example 6 0 100 Spraying 8.7 9.0 0.9 Comparative Example 7 50 50 Evaporation 9.8 7.0 1.7 Comparative Example 8 50 50 Spin coating 9.5 9.4 1.2 [Example 7] In Example 1, the hole transport material 1 and the hole transport material 2 were replaced with the following The hole transporting material 1 and the hole transporting material 5 were subjected to the same steps as in the example 1 in 201132229, whereby the organic EL element of Example 7 was formed. The difference between the free potential of the hole transporting material 1 and the hole transporting material 5: ΛΙρ is 0.2 eV. [Chemical 3]

電洞傳輸材料1 (lp=5.4eV) 電洞傳輸材料5 (lp=5. 6eV) [實例8] 於實例1中,將電洞傳輸材料1及電洞傳輸材料2替 換為下述電洞傳輸材料1及電洞傳輸材料6,除此之外進 行與實例1同樣之步驟,藉此形成實例8之有機EL元件。 電洞傳輸材料1與電洞傳輸材料6之游離電位之差:ΛΙρ 為 0.1 eV。 [化4]Hole transport material 1 (lp = 5.4 eV) Hole transport material 5 (lp = 5.6 eV) [Example 8] In Example 1, the hole transport material 1 and the hole transport material 2 were replaced with the following holes The same procedure as in Example 1 was carried out except that the material 1 and the hole transporting material 6 were transported, whereby the organic EL element of Example 8 was formed. The difference between the free potential of the hole transporting material 1 and the hole transporting material 6 is ΛΙρ is 0.1 eV. [Chemical 4]

電洞傳輸材料1 (lp=5. 4eV) 電洞傳輸材料6 (lp=5. 5eV) 51 201132229 [實例9] 於實例1中,將電洞傳輸材料1及電洞傳輸材料2替 換為下述電洞傳輸材料1及電洞傳輸材料7,除此之外進 行與實例1同樣之步驟,藉此形成實例9之有機el元件。 電洞傳輸材料1與電洞傳輸材料7之游離電位 為 0.6 eV。 另外,關於(實例7〜實例9)之亮度減半時間,將比 較例1之值設為1.0,以相對值分別進行記載。 [化5]Hole transport material 1 (lp = 5. 4 eV) Hole transport material 6 (lp = 5. 5 eV) 51 201132229 [Example 9] In Example 1, the hole transport material 1 and the hole transport material 2 were replaced with the next The hole transporting material 1 and the hole transporting material 7 were described, except that the same procedure as in Example 1 was carried out, whereby the organic EL element of Example 9 was formed. The free potential of the hole transporting material 1 and the hole transporting material 7 was 0.6 eV. Further, regarding the luminance halving time (Example 7 to Example 9), the value of Comparative Example 1 was set to 1.0, and the relative values were separately described. [Chemical 5]

電洞傳輸材料1 (lp=5.4eV)Hole transmission material 1 (lp=5.4eV)

電洞傳輸材料7 dp=6. OeV) [表3] 表3 — 實你丨7 電洞傳輸# 料1 濃度(Wt%) cr» 料5〜7 遭度(wt%) 製膜法 率(%) (V) 亮度減 半時間 jU 50-- --- 50 噴塗 122 8.2 1.4 ----- JU 喷塗 6.8 ' 9.0 1 〇 喷塗_ 7.0 I.Z ΰ [比較例9] 52 201132229 於貫例1中,將電洞傳輸層之電洞傳輸材料1及電洞 傳輸材料2替換為下述電洞傳輸材料1及電洞傳輸材料8 (PTPDES2 : CHEMIPRO KASEI KAISHA, LTD.製造、重 量平均分子量:15,000)’除此之外進行與實例1同樣之步 騾,藉此形成比較例9之有機EL元件。電洞傳輸材料1 與電洞傳輸材料8之游離電位之差:Αίρ為〇丨ev。 另外’關於亮度減半時間,將比較例1之值設為1·〇 ’ 以相對值分別進行記載。 [化6]Hole transport material 7 dp=6. OeV) [Table 3] Table 3 — Real 丨7 Hole Transfer # Feed 1 Concentration (Wt%) cr» Material 5~7 Degree of Acceptance (wt%) Film Formation Rate ( %) (V) Luminance halving time jU 50-- --- 50 Spray 122 8.2 1.4 ----- JU Spray 6.8 ' 9.0 1 〇 Spray _ 7.0 IZ ΰ [Comparative Example 9] 52 201132229 In the first embodiment, the hole transporting material 1 and the hole transporting material 2 of the hole transporting layer are replaced by the following hole transporting material 1 and the hole transporting material 8 (PTPDES2: manufactured by CHEMIPRO KASEI KAISHA, LTD., weight average molecular weight: 15,000) In the same manner as in Example 1, except that the organic EL device of Comparative Example 9 was formed. The difference between the free potential of the hole transporting material 1 and the hole transporting material 8 is: Αίρ is 〇丨ev. Further, regarding the luminance halving time, the value of Comparative Example 1 is set to 1·〇 ’, and the relative values are described separately. [Chemical 6]

電洞傳輸材料1 (lp=5.4eV) 電傳輪材料 {,P=5.3eV) 8 [表4] 表4 電洞傳輸材料 1 濃度(wt%) 電洞傳輸材料8 濃度(wt0/〇) Μ膜法 效率(%) 驅動電壓 (V) 時間 比較例 9 50 1 50 噴塗 --- 8.8 0.9 —---- [比較例10] 53 201132229 於實例1中’將電洞傳輸層之電洞傳輸材料1及電洞 傳輸材料2替換為下述電洞傳輸材料2及電洞傳輸材料8 (PTPDES2 : CHEMIPRO KASEI KAISHA, LTD.製造、重 量平均分子量:15,〇〇〇),除此之外進行與實例1同樣之步 驟,藉此形成比較例1〇之有機EL元件。電洞傳輸材料2 與電洞傳輸材料8之游離電位之差:Αίρ為0.5 eV。 另外,關於亮度減半時間,將比較例1之值設為1.0, 以相對值分別進行記載。 [化7]Hole transmission material 1 (lp=5.4eV) Electric wheel material {, P=5.3eV) 8 [Table 4] Table 4 Hole transport material 1 Concentration (wt%) Hole transport material 8 Concentration (wt0/〇) Membrane method efficiency (%) Driving voltage (V) Time comparison example 9 50 1 50 Spraying --- 8.8 0.9 —---- [Comparative Example 10] 53 201132229 In Example 1, 'the hole in the hole transport layer The transport material 1 and the hole transport material 2 are replaced by the following hole transport material 2 and hole transport material 8 (PTPDES2: manufactured by CHEMIPRO KASEI KAISHA, LTD., weight average molecular weight: 15, 〇〇〇), in addition to The same procedure as in Example 1 was carried out, whereby the organic EL device of Comparative Example 1 was formed. The difference between the free potential of the hole transporting material 2 and the hole transporting material 8 is Αίρ of 0.5 eV. Further, regarding the luminance halving time, the value of Comparative Example 1 was set to 1.0, and the relative values were separately described. [Chemistry 7]

電洞傳輸材料2 (lp=5.8eV) 電洞傳輪材料8 (lp=5.3eV) [表5] 表5 電洞傳輸材料 2 濃度(wt°/〇) '50 電洞傳輸吞ip 0 製膜法 外部量子 驅動電壓 亮度減 〇 濃度(wt%) 50-~ 效率(%) (V) 半時間 ^2 8.5 0.6 [實例ίο] 54 201132229 於實例1中,將電洞傳輪層、發光層及電子傳輸声替 換為以下之電洞傳輸層、發光層及電子傳輸層 ^ 進行與實例i同樣之步驟,藉此形成實例1〇之有機此^ 件。電子傳輸材料1與電子傳輸材料2之電子親和 △Ea為0.4eV。 ” °力之差. ⑴電洞傳輸層(50nm):藉由噴霧法,將pED〇Tpss 溶液((聚乙烯二氧€吩·聚對苯乙稀續酸摻雜體 公司製狀μ·、重量平均分子量4 100 000))之y 液(固形物濃度:1 wt%) ’以所得之電洞傳輸層之 為50 run之量,塗佈於透明陽極上,然後於15叱下= 5小時之真空乾燥。 (2) 發光層(40 nm):藉由噴霧法,將以% : $之 重里比含有下述主體2及發光材料2之二甲笨溶液(固形 物濃度:lwt%)’以所得之發光層之厚度成為4〇nm之量 而塗佈於電洞傳輸層上,於10(TC下進行i小時之真处乾 燥。另外,主體2及發光材料2分別使用藉由昇華純=^ 行了純化而成的材料。 (3) 電子傳輸層(3〇 nm):藉由噴霧法,將以5〇 : 5〇之重量比含有電子傳輸材料1與電子傳輸材料2之甲苯 溶液(固形物濃度:1 wt%) ’以所得之電子傳輸層之厚度 成為30 nm之量而塗佈於發光層上,然後於1〇〇t下進行 1小時之真空乾燥。另外,電子傳輸材料丨與電子傳輪材 料2分別使用藉由昇華純化進行了純化而成的材料。 [實例11、實例12及比較例11〜比較例12] 55 201132229 於實例10中,將電子傳輸層之電子傳輸材料1與電子 傳輸材料2之重量比替換為表6中記載之比例,除此之外 進行與實例10同樣之步驟,藉此形成實例11、實例12及 比較例11〜比較例12之有機EL元件。 [比較例13] 於實例10中,將電子傳輸層替換為以下之電子傳輸 層,除此之外進行與實例10同樣之步驟,藉此形成比較例 13之有機EL元件。 (3)電子傳輸層(30 nm):將基板並不暴露於大氣 中地安裝於真空蒸鍍裝置中。而且,於鉬製電阻加熱晶舟 中分別設置電子傳輸材料1與電子傳輸材料2。將真空槽 減壓至4xl〇·5 pa之後,對所述晶舟進行通電而加熱,調整 蒸鍍速度以使電子傳輸材料1與電子傳輸材料2之重量比 成為50 : 50,蒸鍍於所述基板上,形成膜厚為3〇 nm之電 子傳輸層。 [比較例14] 於實例10中,將電子傳輸層替換為以下之電子傳輸 層,除此之外進行與實例10同樣之步驟,藉此形成比j 14之有機EL元件。 ⑶電子傳輸層(50 nm):藉由旋塗法,將 輸材料1及電子傳輸材料2 (重量比=5〇/5〇)之甲 = (固形物濃度:1 wt%),以所得之電洞傳輸層 、= 30 nm之量而塗佈於發光上之後,於1〇〇ΐΐΓ 之真空乾燥。另外,電子傳輸材料丨及,子傳輪材料2使 56 201132229 用藉由昇華純化進行了純化之材料。 另外,關於亮度減半時間,以比較例11之值為標準, 進行相對比較。 [化8]Hole transport material 2 (lp=5.8eV) Hole transport material 8 (lp=5.3eV) [Table 5] Table 5 Hole transport material 2 Concentration (wt°/〇) '50 Hole transfer swallow ip 0 system Membrane external quantum driving voltage brightness reduction concentration (wt%) 50-~ efficiency (%) (V) half time ^2 8.5 0.6 [example ίο] 54 201132229 In the example 1, the hole transmission layer, the luminescent layer And the electronic transmission sound is replaced by the following hole transport layer, light-emitting layer and electron transport layer, and the same steps as in the example i are performed, thereby forming an organic one of the examples. The electron affinity ΔEa of the electron transporting material 1 and the electron transporting material 2 was 0.4 eV. "The difference between the forces. (1) Hole transport layer (50 nm): pED〇Tpss solution by spray method ((polyethylene dioxybenzophene poly(p-phenylene ether) acid doping company μ·, y liquid (solid content concentration: 1 wt%) of weight average molecular weight 4 100 000)) was applied to a transparent anode in an amount of 50 run of the obtained hole transport layer, and then at 15 Torr = 5 hours Vacuum drying (2) Light-emitting layer (40 nm): by the spray method, the weight ratio of the following body 2 and the luminescent material 2 (solid concentration: lwt%) The thickness of the obtained light-emitting layer was applied to the hole transport layer in an amount of 4 〇 nm, and dried at 10 (TC) for 1 hour. Further, the body 2 and the luminescent material 2 were respectively used by sublimation. =^ The purified material was obtained. (3) Electron transport layer (3 〇 nm): Toluene solution containing electron transport material 1 and electron transport material 2 in a weight ratio of 5 〇:5 藉 by a spray method (solid content concentration: 1 wt%) was applied to the light-emitting layer by the thickness of the obtained electron-transporting layer being 30 nm, and then carried out at 1 〇〇t Vacuum drying was performed for 1 hour. Further, the electron transporting material 丨 and the electron transporting material 2 were respectively purified by sublimation purification. [Example 11, Example 12, and Comparative Example 11 to Comparative Example 12] 55 201132229 In Example 10, the weight ratio of the electron transporting material 1 and the electron transporting material 2 of the electron transporting layer was replaced with the ratio described in Table 6, except that the same steps as in Example 10 were carried out, thereby forming Example 11 and Example 12. And the organic EL device of Comparative Example 11 to Comparative Example 12. [Comparative Example 13] In Example 10, the electron transport layer was replaced with the following electron transport layer, and the same procedure as in Example 10 was carried out, thereby forming The organic EL device of Comparative Example 13. (3) Electron transport layer (30 nm): The substrate was mounted in a vacuum evaporation apparatus without being exposed to the atmosphere, and electron transport was separately provided in a molybdenum resistance heating boat. The material 1 and the electron transporting material 2. After the vacuum chamber is depressurized to 4x1 〇·5 pa, the wafer boat is energized and heated, and the vapor deposition rate is adjusted so that the weight ratio of the electron transporting material 1 to the electron transporting material 2 becomes 50:50, vapor-deposited on the substrate to form an electron transport layer having a film thickness of 3 Å. [Comparative Example 14] In Example 10, the electron transport layer was replaced with the following electron transport layer, and The same procedure as in Example 10 was carried out, thereby forming an organic EL element of ratio j 14. (3) Electron transport layer (50 nm): Transfer material 1 and electron transport material 2 by spin coating (weight ratio = 5 〇 / 5〇) A = (solid content concentration: 1 wt%), applied to the luminescence with the obtained hole transport layer, = 30 nm, and dried under vacuum at 1 Torr. In addition, the electron transporting material and the sub-wheel material 2 are used to purify the material by sublimation purification. Further, regarding the luminance halving time, the relative comparison was performed based on the value of Comparative Example 11. [化8]

57 201132229 [表6] 表6 電子傳輸材料 1 濃度(Wt%) 電子傳輸材料 2 濃度(wt%) 製膜法 外部量子 效率(%) 驅動電壓 (v) 亮度減 半時間 實例10 50 50 喷塗 13.8 5.4 1.7 實例11 30 70 噴塗 13.6 5.7 1.6 實例12 70 30 喷塗 13.2 5.4 1.5 比較例11 100 0 喷塗 11.0 6.0 1.0 比較例12 0 100 喷塗 10.4 5.7 0.54 比較例13 50 50 蒸鍍 12.7 6.1 1.3 比較例14 50 50 旋塗 8.4 10.7 0.43 [實例13] 於實例10中,將電子傳輸層之電子傳輸材料1與及電 子傳輸材料2替換為下述電子傳輸層之電子傳輸材料2及 電子傳輸材料3,除此之外進行與實例10同樣之步驟,藉 此形成實例13之有機EL元件。電子傳輸材料2與電子傳 輸材料3之電子親和力之差:AEa為0.2 eV。 [化9]57 201132229 [Table 6] Table 6 Electron transport material 1 Concentration (Wt%) Electron transport material 2 Concentration (wt%) Film-forming method External quantum efficiency (%) Driving voltage (v) Luminance halving time Example 10 50 50 Spraying 13.8 5.4 1.7 Example 11 30 70 Spraying 13.6 5.7 1.6 Example 12 70 30 Spraying 13.2 5.4 1.5 Comparative Example 11 100 0 Spraying 11.0 6.0 1.0 Comparative Example 12 0 100 Spraying 10.4 5.7 0.54 Comparative Example 13 50 50 Evaporating 12.7 6.1 1.3 Comparative Example 14 50 50 Spin coating 8.4 10.7 0.43 [Example 13] In Example 10, the electron transporting material 1 and the electron transporting material 2 of the electron transporting layer were replaced with the electron transporting material 2 and the electron transporting material of the electron transporting layer described below. 3. The same procedure as in Example 10 was carried out, except that the organic EL element of Example 13 was formed. The difference in electron affinity between the electron transporting material 2 and the electron transporting material 3: AEa is 0.2 eV. [Chemistry 9]

電子傳輸材料2 (Ea=2. 9eV) 電子傳輸材料3 (Ea=3.1eV) 58 201132229 &quot;'' 'r-- [實例14] 於實例10中,將電子傳輸層之電子傳輪材 料2替換為下述電子傳輸層之電子傳 子傳輸材料3,除此之外進行與實例1G同 ^電 形成實例14夕亡地&amp; /:fe±A , 乂邵’精此 »^ 有機兀件。電子傳輪材料1與電子# ,斗之電子親和力之差:AEa為0.6 eV。 輪 [化 10]Electron transport material 2 (Ea=2.9 nV) Electron transport material 3 (Ea=3.1eV) 58 201132229 &quot;'' 'r-- [Example 14] In Example 10, the electron transport layer of the electron transport layer 2 Replace with the electron-transporting material 3 of the electron transport layer described below, and perform the same method as the example 1G to form the instance 14 &amp; /:fe±A, 乂 ' '精精»»^ . The difference between the electron transfer material 1 and the electron #, Dou's electron affinity: AEa is 0.6 eV. Wheel [10]

電子傳輸材料ί (Ea=2.5eV) 電子傳輸材料3 (Ea=3.1eV) LX 例 15] 傳輸材料2替換為==:電子傳輪材料1及電子 子傳輸材料4,€子傳輸材料3及電 材料4之電子親广广:件。电子傳輸材料3與電子傳輸 卞規和力之差:AEa為0.1 ev。 另外’關於(實例13〜實例之 比較例11為標準,進行相對比較。-減+時間’以 [化 11] 59 201132229Electron transport material ί (Ea=2.5eV) Electron transport material 3 (Ea=3.1eV) LX Example 15] Transfer material 2 replaced with ==: electronic transfer material 1 and electron transport material 4, € transfer material 3 and The electronic material 4 of the electronic pro-guangguang: pieces. The difference between the electron transport material 3 and the electron transport 卞 gauge and force: AEa is 0.1 ev. Further, regarding [Example 13 to Example Comparative Example 11 is a standard, a relative comparison is made. - minus + time" to [Chem. 11] 59 201132229

電子傳輪材料3 (Ea=3.1eV)Electronic transfer material 3 (Ea=3.1eV)

(Ea=3.2eV) [表7] 表7(Ea=3.2eV) [Table 7] Table 7

[比較例15] 娜Π0中,將電子傳輸層之電子傳輸材料1及電子 =輸材料2替換為僅上述電子傳輸層之電子傳輸材料3, 除=外崎與㈣1G囉之步驟 之有機EL元件。 [比較例16] 於Λ例10中,將電子傳輸層之電子傳輸材料i及電子 傳輸材料2替換為僅上述電子傳輸層之電子傳輸材料4, 除此之外進域實例1Q同樣之步驟,藉此織比較例16 之有機EL元件。 201132229 之受:度減半時間,以比 另外,關於(比較例15〜16) 較例11為標準,進行相對比較。 [表8] 表8 電子 濃度(wt%、 製膜法 外部量子效 率(0/0) 驅動電壓 (v) 亮度減半 時間 比較例15 100 ~~~ 比較例16 100 &quot; 噴塗 9.7 7.2 0.89 一 ----1 噴塗 9.5 7.5 0-92 [實例16] (熱穩定性試驗) 關於實例1、實例2、實例3之有機EL元件及比較例 卜比較例2之有機EL元件,分別於U(rc下進行μ小時 之熱處理,δ平彳貝其前後的發光效率及驅動電屋。將其纟士果 示於表9中。 [表9] 表9 電洞傳輸材 料1 濃度(Wt°/〇) 電洞傳輸材料 2 濃度(wt%) 製膜法 熱處理 外部置子效 率(%) 驅動電壓 (ν) 實例1 50 50 噴塗 無 15.3 7.3 有 14.8 ~~~ 7.5 實例2 30 70 噴塗 無 14^8 '~~ 8.0 有 14.3 8.2 實例3 70 30 喷塗 無 ' . ------ 13.1 8.1 有 ITo '~~~ 8.4 比較例1 100 0 *塗 無 5.7 9.6 有 23 ~~~ 14.7 比較例2 0 100 喷塗 k 9^8 9.5 有 ϋ8 '~~~ 13.8 61 201132229 爲认歹I〜實例3 2EL兀件混合有電洞傳輸材粗1如 洞傳輸材料2,因此即使於iurCT =輸材枓1與電 效率、驅動電壓均變動較少。另〜 …、处理外。卩量子 例2之元件單獨使用了電洞傳輪 工例1、比較 2 ’藉由較該些之Tg更高之溫度進:=傳輪材料 量子效率、驅動電壓大幅劣化。(Ts &amp;處理,從而使外部 ^、Tg(電洞傳輸材料2):9^)(電洞傳輸材料小 [實例201] (利用帶域熔化法之純化) =直徑為10 mm之派瑞克斯(註冊商標) 合物2GM,細旋^職_空密放封^[Comparative Example 15] In the case of N.0, the electron transporting material 1 and the electron=transporting material 2 of the electron transporting layer were replaced with the electron transporting material 3 of only the above electron transporting layer, except for the organic EL device of the step of the outer and the (4) 1G. [Comparative Example 16] In Example 10, the electron transporting material i and the electron transporting material 2 of the electron transporting layer were replaced with the electron transporting material 4 of only the above electron transporting layer, and the same procedure as in the example 1Q was carried out. Thus, the organic EL device of Comparative Example 16 was woven. In the case of the lapse of half the time, the comparison was made with respect to (Comparative Example 15 to 16) and Example 11 as the standard. [Table 8] Table 8 Electron concentration (wt%, film-forming method external quantum efficiency (0/0) driving voltage (v) brightness halving time comparison example 15 100 ~~~ Comparative Example 16 100 &quot; Spraying 9.7 7.2 0.89 One ----1 Spraying 9.5 7.5 0-92 [Example 16] (Thermal stability test) About the organic EL elements of Example 1, Example 2, and Example 3, and the organic EL elements of Comparative Example 2, respectively, in U ( The heat treatment for μ hours under rc was carried out, and the luminous efficiency of the δ flat mussel before and after it was driven and the electric house was driven. The gentleman's fruit is shown in Table 9. [Table 9] Table 9 Concentration of the hole transport material 1 (Wt°/〇 ) Hole transport material 2 Concentration (wt%) Film heat treatment External heat efficiency (%) Drive voltage (ν) Example 1 50 50 Spray no 15.3 7.3 14.8 ~~~ 7.5 Example 2 30 70 Spray no 14^8 '~~ 8.0 14.3 8.2 Example 3 70 30 Spraying no '. ------ 13.1 8.1 Ipo '~~~ 8.4 Comparative example 1 100 0 *Coating 5.7 9.6 23~~~ 14.7 Comparative example 2 0 100 Spraying k 9^8 9.5 ϋ8 '~~~ 13.8 61 201132229 For the 歹I~ Example 3 2EL 混合 混合 mixed with a hole transmission material thick 1 such as hole transmission material 2, because Even in iurCT = the material 枓 1 and the electric efficiency and the driving voltage are less changed. The other ~ ..., the processing. The components of the quantum example 2 are separately used for the hole transfer case 1. Compare 2 'by Some of the higher temperatures of Tg are: = the quantum efficiency of the transfer material and the driving voltage are greatly degraded. (Ts &amp; processing, so that the external ^, Tg (hole transport material 2): 9 ^) (the hole transmission material is small [Example 201] (purification by the zone melting method) = Pyrex (registered trademark) compound 2 GM having a diameter of 10 mm, finely rotated ^ _ empty sealed |

繼而’藉由下降型帶域炫化法,以1 cm/min之移 度、烙融帶為4 em而使其下降,藉此進行純化。將所得之 化合物於惰性環境下取^,於遮光、雜環境下進行保管。 以同樣之方式藉由帶域熔化法純化化合物2〇12。 62 201132229 χ-- [化 13]Then, the purification was carried out by a descending band stimuli method with a shift of 1 cm/min and a melting band of 4 em. The obtained compound was taken up in an inert atmosphere and stored under light-shielding and heterogeneous environments. Compound 2〇12 was purified by band melting in the same manner. 62 201132229 χ-- [Chem. 13]

化合物 20 1-2 : |p=5.5eV (電洞傳輸層塗佈液201之調製) 將5重量份之化合物2(^4、5重量份之化合物2〇12 溶解於990重量份之電子工業用二曱苯(關東化學製造) 中’調製電洞傳輸層塗佈液2〇1。 (有機EL元件201之製作) 將於25 mmx25 mmx0.7 mm之玻璃基板上以15〇 nm 之厚度蒸鍍有ITO而製膜者作為透明支撐基板。對該透明 支樓基板進行姓刻、清洗。 於該ITO玻璃基板上旋塗於98重量份之環己酮中溶 解有 2 重量份之 PTPDES-2 ( CHEMIPRO KASEI KAISHA, LTD.製造)的塗佈液,進行乾燥,藉此成膜電洞注入層(膜 厚約40 nm )。 於其上’使用電洞傳輸層塗佈液2〇1,藉由喷塗而成 膜’製成電洞傳輸層(膜厚約20 nm)。於真空下、120°C 進行1小時之乾燥。 其次’於其上,藉由真空蒸鍍法,將CBP作為主體材 料、將Ir(ppy)3作為發光材料,使其重量比成為95 : 5而 63 201132229 成膜發光層。 其次’於其上,藉由真空蒸鍍法將BAlq蒸錢為· 40 nm而作為電子注入層。繼而,於其上蒸鍍i nm之^ 鋰,進一步蒸鍍70 nm之金屬鋁,作為陰極。 將所製作之積層體放入至經氬氣置換之手套箱内,使 用不鏽鋼製之密封罐及紫外線硬化型接著劑 (XNR5516HV、Nagase-CIBALtd.製造)進行密封。月 [化 14]Compound 20 1-2 : |p=5.5 eV (Preparation of hole transport layer coating liquid 201) 5 parts by weight of Compound 2 (^4, 5 parts by weight of Compound 2〇12) was dissolved in 990 parts by weight of the electronics industry Using dioxin (manufactured by Kanto Chemical Co., Ltd.) to modulate the hole transport layer coating liquid 2〇1 (manufactured by organic EL element 201), it will be steamed at a thickness of 15 〇 nm on a glass substrate of 25 mm x 25 mm x 0.7 mm. The ITO was coated with a film as a transparent support substrate. The transparent support substrate was pasted and cleaned. The ITO glass substrate was spin-coated on 98 parts by weight of cyclohexanone to dissolve 2 parts by weight of PTPDES-2. The coating liquid (manufactured by CHEMIPRO KASEI KAISHA, LTD.) was dried to form a film injection layer (having a film thickness of about 40 nm). On the above, 'the hole transport layer coating liquid 2 〇 1 was used. A hole transport layer (film thickness of about 20 nm) was prepared from the sprayed film. The film was dried under vacuum at 120 ° C for 1 hour. Secondly, CBP was used as a vacuum evaporation method. The host material, Ir(ppy)3 is used as the luminescent material, and the weight ratio thereof is 95:5 and 63 201132229 film-forming luminescent layer. On the other hand, BAlq was evaporated to 40 nm by vacuum evaporation as an electron injecting layer, and then lithium was irradiated with i nm, and 70 nm of metal aluminum was further vapor-deposited as a cathode. The produced laminate was placed in a glove box which was replaced with argon gas, and sealed with a stainless steel sealed can and an ultraviolet curable adhesive (XNR 5516 HV, manufactured by Nagase-CIBA Ltd.).

,r(ppy)3 [比較例201-1] (電洞傳輸層塗佈液201-1之調製) 將10重量份之化合物201-1與990重量份之電子工業 用二曱苯(關東化學製造)混合、溶解,調製電洞傳輸^ 塗佈液201-1。 64 201132229 (比較有機EL元件201-1之製作) 將電洞傳輸層塗佈液變更為201-1,除此之外與實例 201同樣地製作有機EL元件201-1。 [比較例201-2] (電洞傳輸層塗佈液201-2之調製) 將10重量份之化合物201-2與990重量份之電子工業 用二曱苯(關東化學製造)混合、溶解,調製電洞傳輸層 塗佈液201-2。 (比較有機EL元件201-2之製作) 將電洞傳輸層塗佈液變更為201-2,除此之外與實例 201同樣地製作有機EL元件201-2。 [元件評價] 對所得之元件,藉由上述之評價標準進行外部量子效 率與元件财久性(亮度減半時間)之評價。另外,評價結 果在下述表10中以將比較例201-2之值設為1.0時的相對 值表示。 [表 10] 表10 &quot;—---—. 眚你1 201 -------- 外部量子效率 元件财久性 ~~ 比較例201-1 ~~-- 1.5 1.5 uL&gt; ^ /χ,ϊ ΟΛ1 Λ ---- 08 ~ 1.2 比平父例ZUK 1.0 1.0 了確4藉由使用經帶域溶化法純化之化合物,使用 2種此合而成之電洞傳輸層,可提高外部量子效率與元件 65 201132229 耐久性。 [產業上之可利用性] 藉由本發明,利用含有2種以上之分子量為15〇〇以下 之低分子化合物體,以儒法而形成與發光層鄰接之 層,藉此可提供熱穩定性、發光效率及耐久性優異,驅動 電壓低、可降低製造成本之有機電激發光元件。 而且’藉由本發明,可提供一種有機電激發光元件的 製造方法’所述有機f激發光元件的製造方法可以較低之 製造成本而製造熱穩定性、發光效率及耐久性優異、驅 電壓低之有機電激發光元件。 ~ 另外,藉由本發明’可提供一種具有上述有機電激發 光元件之顯示裝置及照明裝置。 雖然本發明已以較佳實施例揭露如上,然其並非用以 限定本發明’任何熟習此技藝者,在不脫離本發明之精神 和範圍内’當可作些許之更動與潤飾,因此本發明之保嘆 範圍當視後附之申請專利範圍所界定者為準。本申請案^ 張於2009年9月1號向日本智慧財產局提出申請之:本 利申請案第2009-202091號以及於2〇1〇年丨月29號向曰 本智慧財產局提出申請之日本專辦請㈣则^667 號的優先權,該專利申請案所揭露之内容系完整社人 說明書中。 、口口、个 【圖式簡單說明】, r (ppy) 3 [Comparative Example 201-1] (Preparation of hole transport layer coating liquid 201-1) 10 parts by weight of compound 201-1 and 990 parts by weight of terpene benzene for electronic industry (Kanto Chemical Co., Ltd.) Manufacturing) mixing, dissolving, and modulating the hole transporting liquid coating liquid 201-1. 64 201132229 (Production of Comparative Organic EL Element 201-1) The organic EL element 201-1 was produced in the same manner as in Example 201 except that the hole transport layer coating liquid was changed to 201-1. [Comparative Example 201-2] (Preparation of the hole transport layer coating liquid 201-2) 10 parts by weight of the compound 201-2 and 990 parts by weight of an industrial chemical terpene benzene (manufactured by Kanto Chemical Co., Ltd.) were mixed and dissolved. The hole transport layer coating liquid 201-2 is modulated. (Production of Comparative Organic EL Element 201-2) An organic EL element 201-2 was produced in the same manner as in Example 201 except that the hole transport layer coating liquid was changed to 201-2. [Component evaluation] For the obtained element, external quantum efficiency and component longevity (brightness halving time) were evaluated by the above evaluation criteria. Further, the evaluation results are shown in the following Table 10 as relative values when the value of Comparative Example 201-2 is 1.0. [Table 10] Table 10 &quot;-----. 眚You 1 201 -------- External quantum efficiency components fortune ~~ Comparative Example 201-1 ~~-- 1.5 1.5 uL&gt; ^ / χ,ϊ ΟΛ1 Λ ---- 08 ~ 1.2 Compared with the flat parent case ZUK 1.0 1.0, 4 by using the compound purified by the zone melting method, using two kinds of this hole-transport layer can improve the external Quantum efficiency and components 65 201132229 Durability. [Industrial Applicability] According to the present invention, a low molecular compound having two or more molecular weights of 15 Å or less is used, and a layer adjacent to the luminescent layer is formed by the method of the ruthenium, thereby providing thermal stability. An organic electroluminescent device that is excellent in luminous efficiency and durability, has a low driving voltage, and can reduce manufacturing costs. Further, by the present invention, a method for producing an organic electroluminescence device can be provided. The method for producing an organic f-excited device can be manufactured with low thermal efficiency, excellent luminous efficiency and durability, and low driving voltage at a low manufacturing cost. The organic electroluminescent device. Further, according to the present invention, a display device and an illumination device having the above-described organic electroluminescent device can be provided. While the present invention has been described in its preferred embodiments, the present invention is not intended to limit the invention, and the invention may be modified and modified without departing from the spirit and scope of the invention. The scope of the sigh is subject to the definition of the scope of the patent application attached. This application was filed with the Intellectual Property Office of Japan on September 1, 2009: Benli Application No. 2009-202091 and application to Sakamoto Intellectual Property Office on the 29th of January, 2001. Japan's special office please (4) the priority of ^667, the content disclosed in the patent application is in the complete company manual. , mouth, one [simplified description]

圖1是表示本發明之有機EL元件之層 概略圖。 4 J 66 201132229 圖2是表示本發明之顯示裝置之一例的概略圖。 圖3是表示本發明之照明裝置之一例的概略圖。 【主要元件符號說明】 2 :基板 3 :陽極 4:電洞注入層 5:電洞傳輸層 6 :發光層 7 :電洞阻擋層 8:電子傳輸層 9 :陰極 10 :有機電激發光元件(有機EL元件) 11 :有機層 12 :保護層 14 :接著層 16 :密封容器 20:發光裝置 30 :光散射部件 30A :光入射面 30B :光出射面 31 :透明基板 32 :微粒子 40 :照明裝置 67Fig. 1 is a schematic view showing a layer of an organic EL device of the present invention. 4 J 66 201132229 Fig. 2 is a schematic view showing an example of a display device of the present invention. Fig. 3 is a schematic view showing an example of a lighting device of the present invention. [Main component symbol description] 2: Substrate 3: Anode 4: Hole injection layer 5: Hole transport layer 6: Light-emitting layer 7: Hole barrier layer 8: Electron transport layer 9: Cathode 10: Organic electroluminescence element ( Organic EL element 11 : Organic layer 12 : Protective layer 14 : Next layer 16 : Sealed container 20 : Light-emitting device 30 : Light-scattering member 30A : Light-incident surface 30B : Light-emitting surface 31 : Transparent substrate 32 : Fine particles 40 : Illuminating device 67

Claims (1)

201132229 七、申請專利範圍: 1. -種有機電激發光元件,其是於極間且有發 光層以及至少-層之與發光層雜之層的麵電激發光元 件’其特徵在於: 該至少一層之與發光層鄰接之層藉由含有2種以上之 分子量為1500以下之低分子化合物的液體,利用喷^法而 形成。 ' 2. 如申請專利範圍第1項所述之有機電激發光元件, 其中, 所述至少一層之與發光層鄰接之層是電洞傳輸層。 3. 如申請專利範圍第i項或第2項所述之有機^激發 光元件,其中, 所述2種以上之分子量為1500以下之低分子化合物是 第1低分子化合物與第2低分子化合物之2種的化合物, 其混合比例以重量比計而言為20 : 80〜8〇 : 2〇。 4. 如申請專利範圍第1項或第2項所述之有機電激發 光元件,其中, 所述2種以上之分子量為15〇〇以下之低分子化合物是 2種以上之電洞傳輸材料。 5. 如申請專利範圍第4項所述之有機電激發光元件, 其中, 所述2種以上之電洞傳輸材料的游離電位之差為ο』 eV以上0.6 eV以下。 6. 如申請專利範圍第4項所述之有機電激發光元件, 68 201132229 其中, 所述2種以上之電洞傳輸材料為芳基 衍生物。 土奶4卞生 光元:如:專利範圍第1項或第2項所述之有機電激發 所層之與發光層鄰接之層是電子傳輸層。 8. 如申Μ專利範圍第7項所述之有機電激發光元件, 其中, 所述,子傳輸層藉由含有2種以上之電子傳輸材料之 液體而形成。 9. 如申請專利範圍第8項所述之有機電激發光元件, 其中, 所述2種以上之電子傳輸材料之電子親和力之差為 0.1 eV以上0.6 eV以下。 10· 一種有機電激發光元件的製造方法,其是於一對 電極間具有發光相及至少-層之與發光層鄰接之層的有 機電激發光元件的製造方法,其特徵在於: 該至少一層之與發光層鄰接之層藉由含有2種以上之 分子量為1500以下之低分子化合物的液體,利用噴霧法而 形成。 11.如申請專利範圍第1〇項所述之有機電激發光元件 的製造方法,其中, 藉由所述喷霧法而形成所述發光層以及所述與發光層 鄰接之層之各層。 69 201132229 12. —種顯示裝置,其具有如申請專利範圍第1項或 第2項所述之有機電激發光元件。 13. —種照明裝置,其具有如申請專利範圍第1項或 第2項所述之有機電激發光元件。 70201132229 VII. Patent application scope: 1. An organic electroluminescence device, which is a surface electroluminescent device with a light-emitting layer and at least a layer of a layer mixed with a light-emitting layer, characterized in that: The layer adjacent to the light-emitting layer of one layer is formed by a spray method using a liquid containing two or more kinds of low molecular weight compounds having a molecular weight of 1,500 or less. 2. The organic electroluminescent device according to claim 1, wherein the at least one layer adjacent to the light-emitting layer is a hole transport layer. 3. The organic light-emitting device according to the above-mentioned item, wherein the two or more low molecular compounds having a molecular weight of 1,500 or less are the first low molecular compound and the second low molecular compound. The compounding ratio of the two compounds is 20:80 to 8:2 重量 in a weight ratio. 4. The organic electroluminescent device according to the first or second aspect of the invention, wherein the two or more low molecular compounds having a molecular weight of 15 Å or less are two or more types of hole transporting materials. 5. The organic electroluminescent device according to claim 4, wherein a difference in free potential between the two or more types of hole transport materials is ο"eV or more and 0.6 eV or less. 6. The organic electroluminescent device according to claim 4, wherein the two or more hole transporting materials are aryl derivatives. Earth Milk 4: Optical element: For example, the layer adjacent to the light-emitting layer of the organic electro-active layer of the first or second aspect of the patent is an electron transport layer. 8. The organic electroluminescent device according to claim 7, wherein the sub-transport layer is formed by a liquid containing two or more kinds of electron transporting materials. 9. The organic electroluminescent device according to claim 8, wherein the difference in electron affinity between the two or more electron transporting materials is 0.1 eV or more and 0.6 eV or less. 10. A method of producing an organic electroluminescence device, which is a method for producing an organic electroluminescence device having a light-emitting phase and at least a layer adjacent to a light-emitting layer between a pair of electrodes, wherein: the at least one layer The layer adjacent to the light-emitting layer is formed by a spray method using a liquid containing two or more kinds of low molecular weight compounds having a molecular weight of 1,500 or less. The method of producing an organic electroluminescence device according to the first aspect of the invention, wherein the light-emitting layer and each layer of the layer adjacent to the light-emitting layer are formed by the spraying method. 69 201132229 12. A display device comprising the organic electroluminescent device according to claim 1 or 2. 13. A lighting device having an organic electroluminescent device as described in claim 1 or 2. 70
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JP6331393B2 (en) 2011-11-11 2018-05-30 三菱ケミカル株式会社 Organic electroluminescent device and organic electroluminescent device
DE112013002110B4 (en) * 2012-04-20 2017-09-07 Semiconductor Energy Laboratory Co., Ltd. Light emitting element, light emitting device, electronic device and lighting device
KR101909775B1 (en) * 2012-04-20 2018-10-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Light-emitting element, light-emitting device, electronic appliance, and lighting device
EP2688117A1 (en) * 2012-07-20 2014-01-22 Solvay Sa Process for forming a layer of an organic electronic device
JP2014187283A (en) * 2013-03-25 2014-10-02 Kaneka Corp Organic el device
WO2016068585A1 (en) * 2014-10-27 2016-05-06 주식회사 엘지화학 Organic electroluminescence device
WO2021065772A1 (en) * 2019-10-04 2021-04-08 出光興産株式会社 Organic electroluminescent element and electronic appliance
WO2022209812A1 (en) * 2021-03-31 2022-10-06 出光興産株式会社 Organic electroluminescent element, electronic device and composition

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4961412B2 (en) * 2003-11-10 2012-06-27 淳二 城戸 ORGANIC ELEMENT AND METHOD FOR PRODUCING ORGANIC ELEMENT
KR101413129B1 (en) * 2005-10-28 2014-07-01 닛산 가가쿠 고교 가부시키 가이샤 Charge-transporting varnish for spray or inkjet application
JP4718372B2 (en) * 2006-05-19 2011-07-06 旭化成株式会社 Electronic device manufacturing method and electronic device
JP5244378B2 (en) * 2007-12-21 2013-07-24 株式会社日立製作所 Organic light emitting display
WO2009104708A1 (en) * 2008-02-22 2009-08-27 昭和電工株式会社 Polymer compound and organic electroluminescent device using the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI802541B (en) * 2016-05-31 2023-05-21 瑞士商菲利浦莫里斯製品股份有限公司 Fluid permeable heater assembly for aerosol-generating systems and electrically operated aerosol-generating system

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