TW201131823A - Light-emitting device, luminaire using the same, and image display device - Google Patents

Abstract

The present invention provides a high luminance light-emitting device, a lighting device using the light-emitting device and an image display device. A light-emitting device 1 comprises a light-emitting source 2 and a wavelength transferring member 5, the wavelength transferring member 5 contains cylindrical fluorescent particles 8 which absorbs near-ultraviolet to blue light emitted from light-emitting source 2 and emits at least one kind of fluorescence, a bias of at least one crystalline orientation distribution of the cylindrical fluorescent particles is 5% to 15% which is the orientation index analyzed by following formula (1) through using a cross-section of the light-emitting device by electron backscatter diffraction pattern method. Orientation Index= ((a cross-section area of the particle having a crystal orientation of a crystal surface corresponding to the bottom surface of the cylindrical fluorescent particles ± 30 DEG )/(a cross-section of the cylindrical fluorescent particles ))x100(%) (1)

Description

201131823 VI. Description of the Invention: [Technical Field] The present invention relates to a light-emitting device, an illumination device using the same, and an image display device. More specifically, the present invention relates to a light-emitting device in which the shift of the crystal orientation distribution of the phosphor in the wavelength converting member for the light-emitting device is controlled. [Prior Art] Recently, in the field of illumination, illumination using a white light-emitting diode as a light source has been gradually adopted. Such lighting is also known as LED lighting or LED lighting. The white light-emitting diode system is composed of, for example, a blue light-emitting diode wafer and a phosphor. Specifically, a composite member in which a phosphor is dispersed in a resin or the like is coated on a blue light-emitting diode wafer. One example of the phosphor is a material in which yellow fluorescence occurs when blue light is irradiated from the blue light-emitting diode. Therefore, the composite member is also referred to as a wavelength conversion member that converts blue light into yellow. White light can be obtained by mixing blue light generated from the blue light-emitting diode and emitting yellow light by excitation through the blue light. Figure 6 is a cross-sectional view showing a conventional light-emitting diode structure. As shown in FIG. 6, the conventional light-emitting diode 60 is composed of a light-emitting diode chip 66, a first lead frame 62 on which the light-emitting diode chip 66 is mounted, a second lead frame 68, and a coated light-emitting diode. The wafer 66, the first lead frame 62, and the light transmissive resin material 78 of the second lead frame 68 are formed. A concave portion for mounting the light-emitting diode wafer is formed on the upper portion 62a of the first lead frame 62. The concave portion has a diameter that gradually expands from the bottom surface of the concave portion toward the top of the 201131823 polar ginseng 64 light 72 light truss is caused by the approximate funnel shape of the fat peracid 1), and the inner surface of the concave portion becomes the reflecting surface 64 . The lower side electrode of the light-emitting diode wafer 66 is bonded to the bottom surface of the reflecting surface 64. The other electrode formed on the upper surface of the light-emitting diode wafer 66 is connected to the surface 6 8 a of the second lead frame 68 through the bonding wire 70 (see Patent Document 1). The upper surface and the side surface of the light-emitting diode wafer 66 are covered by a wavelength converting member that is filled in the reflecting surface. The wavelength conversion member is composed of a resin 72 such as a transparent epoxy resin and a phosphor 74, and the phosphor in which the light emission of the light-emitting diode chip 66 is converted into yellow visible light is dispersed in a large amount in a dispersed state. Mix in. Such a phosphor 7 4 can be exemplified by a base material composed of yttrium aluminate (Y3A15012) and a YAG phosphor having an illuminating center of (Ce). If a voltage is applied between the first lead frame 62 and the second lead frame 68, the light emitting diode chip 66 will be light. As described above, the blue light emission of the radiation LED wafer 66 and the blue light emission cause the yellow visible light to be emitted from the YAG phosphor 74. White light can be obtained by mixing the blue visible light with the yellow visible light emitted from the YAG egg light 74. This white light is condensed by the convex lens portion 76 of the light-transmitting tree 78 and radiated to the outside. The fluorescent body 74 for a conventional white light-emitting diode uses a phthalate, a dish salt, an aluminate or a sulfide for a parent material, and a source of a transition metal or a rare earth metal. The active material is also referred to as the luminescent center. In addition to the epoxy resin described in Fig. 4 (see also the patent document, acrylic resin, enamel resin, etc. are also used. 201131823 In recent years, due to the high brightness of the white light-emitting diode, a large current flows into the light-emitting diode 2 The polar body wafer is formed. Therefore, the temperature of the light-emitting diode wafer is increased. Thereby, the temperature of the phosphor disposed on the light-emitting diode wafer is also increased. In the conventional phosphor, When the temperature rises and the brightness of the fluorescent light is also lowered, a phosphor having a crystal structure of a stable nitride or oxynitride is gradually used as a phosphor having a small decrease in luminance with an increase in temperature and excellent durability. A representative phosphor can be exemplified by Sialon which is a solid solution of tantalum nitride (Si3N4). The Saron is a Si-Al-Ο-Ν which replaces a part of the atomized sand by A1 and oxygen. A compound of the type α and type A, in which a specific rare earth element is activated (see Patent Documents 2 to 4) has useful fluorescent characteristics, white Light-emitting diode, etc. In the patent documents 2 and 3, the Ca-α-type sialon in which the rare earth element is activated by Eu (铕) or Er (bait) has been described. In Patent Document 4, the use of rare earth elements via Eu has been described. An illuminating device for a phosphor and a light-emitting diode of activated Ca-a type Sialon. In Patent Document 5, a P-type Sialon phosphor activated by Eu using a rare earth element has been described. The luminescence spectrum of the sialon phosphor is green light and is very clear, so it is a phosphor suitable for the green luminescent component among the three primary colors. Therefore, the β-Sialon fluorescent system of Patent Document 5 is suitable for blue. The phosphor of the white light-emitting diode of 201131823 used for the backlight panel of the liquid crystal display panel which is required for the light source of the green and red light, and the narrow-band stencil of the half-width of the light. Patent Document 1: Japanese Patent Patent Document No. 2004- 1 52 993 Patent Document 2: Japanese Patent No. 3 66 8 770 Patent Document 3: Japanese Patent Application No. 3 72 6 1 3 1 Patent Document 4: Japanese Patent Special Publication 2003 - 1 24 527 Gazette Patent Japanese Patent Laid-Open No. Hei 2 0 0 5 - 2 5 5 8 9 5 Patent Document 6: Japanese Patent No. 3 8 3 7 5 8 8 Non-Patent Literature Non-Patent Document 1 : Electron Backscatter Diffraction in

Materials Science, Edited by AJ Schwartz, M. Kumar and BL Adams, Kluwer Academic/Plenum Publishers, New York, 2000 [Summary of the Invention] [Technical Problem to be Solved by the Invention] By illuminating from a light-emitting diode wafer In order to reduce the intensity of the emitted light, from the near-ultraviolet to the blue light, and the light-emitting diode that emits white light by color mixing with a phosphor that is excited by the light, for example, mixed with yellow light, The color tone is different, and the phosphor is dispersed or used to settle in the resin of the wavelength converting member. In the case where two or more types of phosphors are used for wavelength conversion, the two or more kinds of phosphors are uniformly mixed in the resin of the wavelength converting member, or control such as unevenness is performed. However, in the case where the particle shape of the phosphor is a column shape or a columnar shape of 201131823, since the phosphor particles are displayed in the sealing resin, the columnar particles are dispersed in a one-way direction, and the crystal orientation is considered. Under the circumstance, it is impossible to judge that there is no bias, and for the light-emitting device that provides higher brightness, the crystal orientation distribution of the control phosphor particles is insufficient. The present invention has been made in view of the above problems, and an object thereof is to provide a light-emitting device, an illumination device using the same, and an image display device, in order to achieve high luminance from a near-ultraviolet to blue light source, by controlling wavelength The crystal orientation distribution of the phosphor in the conversion member is made higher in brightness. [Means for Solving the Problem] The inventors of the present invention are in a light-emitting device including a phosphor having a columnar shape in a wavelength conversion member, and use electron backscattering for a crystal body orientation distribution shift having a columnar shape. The diffraction pattern method (see Non-Patent Document η). The viewpoint that the crystal orientation of the phosphor having a columnar shape is distributed within a predetermined range is obtained, and the luminous intensity from the light-emitting device is improved. In order to achieve the object, a light-emitting device of the present invention is characterized in that it comprises an illuminating light source and a wavelength converting member; and the wavelength converting member contains absorbing fluorescence from near ultraviolet to blue light generated by the illuminating light source. More than one type of columnar phosphor particles; at least one columnar phosphor particle crystal orientation distribution is shifted by using an electron backscatter diffraction pattern method to analyze the alignment represented by the following formula (1) of the cross section of the light-emitting device The index is set to 5% or more and 15% or less. The alignment index (%) = ((equivalent to a phosphor with a columnar shape 201131823) The cross-sectional area of the crystal grain of the bottom surface of the crystal surface of ±30°) / (the cross-sectional area of the phosphor particles having a columnar shape)) X 1 0 0 ( % ) ( 1 ). In this configuration, the luminescence The light source is preferably a light-emitting diode that emits light from near-ultraviolet to blue light, that is, light having a wavelength of 300 nm to 500 nm. The phosphor preferably contains a beta-type Sialon, an alpha-type Sialon, and a Any of Eu-activated CaAlSiN3. The light-emitting device of the present invention can be applied to an illumination device or an image display device. The effect of the invention is compared with a light-emitting device that does not control the crystal orientation distribution of the phosphor. A white light-emitting device using blue or ultraviolet light as a light source can obtain higher-luminance light. The light-emitting device of the present invention can be suitably used as a high-intensity light source as an illumination device or a video display device. [Embodiment] The embodiment of the present invention will be described in detail with reference to the drawings. Fig. 1 is a cross-sectional view showing the structure of a light-emitting device of the present invention. As shown in Fig. 1, the light-emitting device of the present invention is shown in Fig. 1. The first lead frame 3 includes a light source 2, a first lead frame 3 on which the light source 2 is mounted, a second lead frame 4, and a wavelength conversion member 5 that covers the light source 2 and the first lead frame 3. The upper portion 3a is formed with a recessed portion 3b for mounting the 201131823 light-emitting diode wafer as the light-emitting source 2. The recessed portion 3b has an approximate funnel shape in which the aperture gradually expands upward from the bottom surface of the recessed portion, and the inner surface of the recessed portion 3b becomes a reflection. The surface of the lower side of the light-emitting diode wafer 2 is bonded to the bottom surface of the reflecting surface. The other electrode formed on the upper surface of the light-emitting diode wafer 2 is connected to the connecting line 6 through the bonding line 6. The surface of the second lead frame 4. Further, as shown in Fig. 1, the light-emitting device 1 and the first and second lead frames 3, 4 and the wavelength conversion member 5 and the line 6 are integrally formed by A gap 9 made of resin or glass is covered. The illuminating light source 2 can use a light-emitting diode wafer in which light of a wavelength of from 300 nm to 500 nm from near ultraviolet to blue light 3 occurs. The wavelength converting member 5 is composed of, for example, a resin material 7 such as enamel resin and at least one or more kinds of phosphors 8, and the phosphor 8 is dispersed in a resin material. The type of the phosphor 8 is preferably selected by the color tone obtained by the color mixture of the light of the illuminating light source 2 and the light emitted from the illuminating light source 2, in order to obtain the desired color. The mixed color light can be used by combining the types of the phosphors 8 of one or a plurality of arrays. The phosphor 8 has a granular shape. Such phosphor particles 8 can be exemplified by β-Sialon 'α-sialon, EU-activated CaAlSiN 3 and the like. These phosphors 8 have a columnar crystal shape such as a hexagon. The β-Sialon 8 system represented by the general formula: Si6-ZA1Z0ZN8-Z: Eu2+ has a columnar shape, and the luminescent property exhibits green luminescence with a peak wavelength of 520 nm to 550 nm.

S -10- 201131823 The α-type Sialon 8 represented by the general formula: Cam/2Sii2-(m+n)Al(m+n)Ni6.n〇n: Eu2 + also has a columnar shape, and the luminescent properties are exhibited. From 550 nm to 610 nm, the yellow to orange luminescence of the peak wavelength.

CaAlSiN3: Eu also has a columnar shape, and the luminescent property exhibits red luminescence with a peak wavelength of 63 0 nm to 65 50 nm. The light-emitting device 1 of the present invention is characterized in that the light-emitting intensity of the light-emitting device 1 is improved by controlling the shift of the crystal orientation distribution of the phosphor 8 having a columnar shape in the wavelength conversion member 5 within a predetermined range. the opinion of. The shift of the crystal orientation distribution of the phosphor 8 having the columnar shape in the wavelength conversion member 5 is as described later, and the light-emitting device can be evaluated by the electron backscatter diffraction pattern method (see Non-Patent Document 1). A section of the wavelength converting member 5 of 1. The inventors of the present invention produced a plurality of light-emitting devices 1 and analyzed the result of shifting the crystal orientation distribution of the phosphor 8 particles in the wavelength conversion member 5 by the electron backscatter diffraction pattern method, and the following formula (1) When the orientation index represented is 5% or more and 15% or less, it is found that the luminous intensity from the light-emitting device 1 is improved. Orientation index (%) = ((corresponding to the cross-sectional area of particles having a crystal orientation of ±30° on the crystal face of the bottom surface of the phosphor particles having a columnar shape)/(the cross-sectional area of the phosphor particles having a columnar shape) Χ1〇〇(%) (1) The alignment index shown in the equation (1) has an analytical column shape obtained by an electron backscatter diffraction method (also referred to as EBSD). Crystallization of the bottom surface of the phosphor particles 8

S -11 - 201131823 The face is inclined to _30 with respect to its normal direction. To 30. The cross-sectional area of the phosphor particles 8 on the crystal plane is divided by the cross-sectional area of all the phosphor particles 8 and then obtained as a percentage. That is, the alignment index indicates the shift of the crystal orientation distribution of the phosphor particles 8 having the columnar shape in the wavelength conversion member 5. First, a method of evaluating the deviation of the crystal orientation distribution of the phosphor 8 of the wavelength conversion member 5 by the electron backscatter diffraction pattern method (see Non-Patent Document 1) will be described. Fig. 2 is a view showing the order of analysis of the crystal orientation distribution shift of the crystal particles composed of the phosphors 8 in the wavelength conversion member 5 of the present invention. As shown in Fig. 2, in the imaging step ST1, the cross section of the crystalline particles in the wavelength conversion member 5 is visualized. In the determination step ST2, the orientation of each crystal particle of the image formed by the imaging step of step ST1 is determined. In step ST3, the distribution of the respective directions determined via the determination step of step ST2 is analyzed and specified. Finally, in the analyzing step ST4, the azimuth distribution obtained in the analysis stage of step ST3 is analyzed to analyze the shift of the crystal orientation distribution. In the image forming step ST1, mechanical honing and ion honing are performed to modulate the cross section of the wavelength converting member 5, and then the cross section is visualized. In this imaging, it can be carried out using a device stomach which can observe crystal particles which are exposed to the cross section. For example, by introducing the cross section of the wavelength conversion member 5 into the sample chamber of the scanning type β sub-microscope and observing the secondary electron image of the cross section, it is possible to image -12-201131823. Then, in the determination step ST2, the cross section of the wavelength conversion member 5 is obtained by the analyzing device, and the crystal orientation of the observed crystal particles is determined. As the analyzing device for such a crystal orientation, a device using an electron backscatter diffraction pattern method can be exemplified. One example of this device is to attach a detector that may take an electronic backscatter diffraction pattern to a scanning electron microscope. The electronic backscatter diffraction pattern method is implemented by a scanning electron microscope, and the spatial resolution capability is 〇. 1 / m or so, and the resolution of the sample is determined to be about 1 °. Further, in the electron backscatter diffraction pattern method, a quadratic geometrical pattern called a Kikuchi pattern corresponding to the crystal structure and crystal orientation of the crystal particles can be obtained. In the electron backscatter diffraction pattern method, a Kikuchi pattern corresponding to a crystal face is observed, and the crystal orientation of the particles can be determined from the shape of the Kikuchi pattern. In the analysis step ST3, it is possible to analyze by using an analysis program capable of analyzing the crystal orientation based on the Kikuchi pattern acquired in the determination step ST2. That is, the crystal pool pattern of the crystal particles is obtained, and the crystal orientation is specified by an analytical program, and the crystal orientation distribution can be obtained by repeating this step by using a plurality of crystal particles. Here, the larger the number of crystalline particles in a specific crystal orientation, the more statistically accurate the analytical accuracy is. If the number of crystalline particles is 50 or more, sufficient information can be obtained for analysis. The analysis step ST4 of the azimuth distribution offset is added to -13,318,318 to illustrate. The analysis step ST4 can also be carried out by the electronic backscatter diffraction pattern method. The alignment index defined by the formula (1) can be used in the case where the crystal orientation distribution shift is resolved based on the crystal orientation distribution obtained in the analysis step ST3. According to the investigation by the inventors, it has been found that in order to increase the luminosity of the light-emitting device 1, it is preferable that the alignment index of the β-Sialon phosphor particles 8 observed in the cross section of the wavelength conversion member 5 is 5% or more. And less than 15%. When the alignment index is smaller than 5%, the crystal orientation shift of the β-Sialon phosphor particles 8 is eliminated, and the luminosity from the light-emitting device 1 is lowered. On the contrary, in the case where the alignment index is larger than 15%, the crystal orientation shift of the β-Sialon phosphor particles 8 becomes too large, and in this case, also because the luminosity of the light-emitting device 1 is lowered. good. It is found that in order to further improve the luminosity of the light-emitting device 1, the alignment index is preferably 7% or more and 13% or less. Further, the phosphor 8 dispersed in the wavelength conversion member 5 is used as α-type Sialon and Eu-activated CaAlSiN 3 (also labeled as CaAlSiN 3 :Eu), and the crystal orientation distribution of the phosphor 8 is also performed in the same manner as described above. The resolution of the offset. In this case as well, the same result as in the case of the β-Sialon was obtained. According to experiments by the inventors of the present invention, it can be found that even if the alignment index is less than 5% or becomes larger than 15%, that is, if the crystal orientation distribution of the phosphor 8 having a columnar shape is obtained When the shift of the range is exceeded, the luminous intensity of the light-emitting device 1 will decrease. It is considered that this is because the phosphor particles 8 having a columnar shape have a certain directivity and exist in the wavelength conversion structure.

In the case of S -14-201131823, the probability of the blue light or the ultraviolet light emitted from the light-emitting source and the light emitted by the wavelength conversion member 5 being scattered in a certain direction is increased in a certain direction. Therefore, the light path of the light generated in the light-emitting element is shifted, which causes the light emission from the light-emitting element to be effectively taken out to the outside. In this manner, in the case where the alignment index is less than 5%, or becomes larger than 15%, the luminous intensity of the light-emitting device 1 is lowered. As described above, according to the present invention, by shifting the crystal orientation distribution of the phosphor particles 8 in the wavelength conversion member 5 into a predetermined range, it is possible to provide the light-emitting device 1 having higher brightness and no color unevenness. . The light-emitting device 1 for controlling the crystal orientation distribution of the phosphor 8 having the columnar shape included in the wavelength conversion member 5 of the present invention can be used for an illumination device. The light-emitting device 1 for controlling the crystal orientation distribution of the phosphor 8 having the columnar shape included in the wavelength conversion member 5 of the present invention can be used for an image display device such as a backlight for a liquid crystal television. That is, the light-emitting device 1 of the present invention can provide, in particular, an image display device using the white light-emitting device 1 as an illumination device for a backlight. In comparison with a backlight using a conventional fluorescent lamp, since the backlight of the present invention can improve the spectral purity of the three primary colors, the color rendering property will be improved. Further, since the backlight panel comprising the light-emitting device 1 of the present invention uses the light-emitting diode as a light source, the power consumption is reduced. Example

S -15- 201131823 Next, the present invention will be described in more detail based on examples. The white light-emitting device 1 was produced in the following manner. That is, a commercially available LED package (I-CHIUN PRECISION INDUSTRY CO. LTD, model SMD5050) and a blue LED chip (Genesis Photonics) are available.

A white light-emitting device 1 (hereinafter also referred to as a white light-emitting device) was produced from the wavelength conversion member 5 manufactured by Inc., and the RIS RIS 45A19). Specifically, the wavelength converting member 5 is to be used as the red phosphor 8

The CaAlSiN3: Eu phosphor and the β-Sialon phosphor produced by the company as the green phosphor 8 are blended in a resin 7 (manufactured by Toray Dow Corning Co., Ltd., model EG6301), and are coated in blue. On the light-emitting diode chip 2.

The CaAlSiN3 : Eu phosphor 8 is synthesized by the production method described in Patent Document 6. As shown in the following Table 1, in the first to fourth embodiments, the shift in the crystal orientation distribution of the phosphor 8 in the wavelength conversion member 5 is within the range of the predetermined « (that is, it is 5% or more and 15). The white light-emitting device 1 is obtained by dispersing the β-sialon phosphor 8 from which the remarkable needle-like and columnar particles have been removed in the wavelength conversion member 5 in a manner of % or less. (Comparative Example) Next, in Comparative Examples 1 to 4, as shown in Table 1, the crystal orientation distribution of the phosphors 8 in the respective wavelength conversion members 5 was shifted outside the predetermined range (i.e., became In a manner to be smaller than 5% or larger than 15%, the β-SiAlON phosphor 8 having a substantially needle-like and columnar particle as a main component is dispersed in the opposite manner to the embodiment. Except for this, a white light-emitting device 1 was produced in the same manner as in the embodiment. 201131823 The relationship between the luminosity of the white light-emitting device 1 and the crystal orientation distribution of the phosphor particles 8 in the wavelength conversion member 5 of the present invention is examined. For the measurement of the crystal orientation distribution, as in the manner described in the imaging step ST1, the cross section of the wavelength conversion member 5 must be observed. However, the white light-emitting device 1 is broken by making the cross section of the wavelength conversion member 5. Therefore, the luminosity of the white light-emitting device 1 produced in the examples and the comparative examples was measured first. Next, the crystal orientation distribution of the phosphor particles 8 in the wavelength conversion member 5 is measured, and the alignment index is calculated. A forward voltage is applied to the produced white light-emitting device 1, and a predetermined current is passed to cause the white light-emitting device 1 to emit light. The white light is generated by the color mixture of the blue light from the blue light-emitting diode chip and the red and green light emitted from the blue light. The measurement of the luminosity was carried out using an ultra-high sensitivity instantaneous multi-time measuring system (manufactured by Otsuka Electronics Co., Ltd., MCPD-7000). In addition, the luminosity is calculated by the relative radiance of the illuminance of the white light-emitting device 1 in Comparative Example 1 to be 100%. Next, the analysis of the shift in the crystal orientation distribution of the phosphor 8 in the wavelength conversion member 5 of the white light-emitting device 1 is carried out by the method shown in Fig. 2 . The step of imaging the cross section of the crystalline particles in the wavelength converting member 5 exposes the cross section of the white light-emitting device 1 by mechanical honing and Ar+ ion honing. Then, the cross section of the white light-emitting diode -17-201131823 was observed by an electric field radiation type scanning electron microscope (FE-SEM, manufactured by Sakamoto Electronics Co., Ltd., JSM-7 0 0 IF type), and the wavelength conversion member 5 was obtained. That is, a cross-sectional image of the crystalline particles of the phosphor 8 blended in the sealing resin 7. In the determination step of determining the respective orientations of the crystal particles among the images formed by the imaging step, an electron backscatter diffraction pattern measuring device (manufactured by EDAX-TSL, Form OIM) is added to the electric field radiation type. Scan the device of the electron microscope. The crystal orientation was measured by the crystal orientation analysis system. In the electron backscatter diffraction pattern method, a Kikuchi pattern according to the crystal face was observed. The crystal orientation of the observed particles is determined based on the shape of the Kikuchi pattern. Specifically, the crystal orientation can be analyzed by using a soft body (OIM Ver., Ltd., OIM Ver5.2) which can analyze the crystal orientation from the Kikuchi pattern obtained by the electron backscatter diffraction pattern method. The measurement conditions of the crystal orientation are shown below: Acceleration voltage: 15 kV Operating distance: 1 5 mm Sample tilt angle: 7 〇 ° Measurement area: 8 0 // m X 2 0 0 am Step width: 〇 2 Measurement time: 50 Msec / step data points: about 400, 〇〇〇 (400,000) points. Further, the measurement conditions are not limited to these conditions, and can be appropriately determined in accordance with the sample form and device performance. The orientation distribution of the crystal obtained in the analysis step is analyzed, and the alignment index defined by the formula (1) -18 - 201131823 is obtained. Next, the measured luminosity and alignment index will be described. (Measurement Results of Example 1) The luminescence luminosity of the luminescence device of Example 1 was 106.5%, and the alignment index of the β-Sialon phosphor 8 calculated by the formula (1) was 13.3%. (Measurement Results of Example 2) The luminescence luminosity of the luminescence device of Example 2 was 103.8%, and the alignment index of the β-Sialon phosphor 8 calculated by the above formula (1) was I4"%. (Measurement Results of Example 3) The luminosity of the light-emitting device of Example 3 was 108.9%. Fig. 3 is a graph showing the shift in the crystal orientation distribution of the β-SiAlON phosphor 8 of Example 3. The area indicated by the oblique line is the crystal plane of the ΡSialon (000 1) and the section of the crystal plane of ±30 degrees with respect to the normal direction thereof; the area without the slanting line is the β-type Sialon luminescence exposed by other crystal planes. Body 8. The orientation index of the β-Sialon phosphor 8 calculated by the formula (1) was 11.3%. (Measurement Results of Example 4) The luminescence luminosity of the illuminating device 1 of Example 4 was 104.1%, and the alignment index of the β-Sialon phosphor 8 calculated by the formula (1) was 7.3%. (Measurement Results of Comparative Example 1) The luminosity of the light-emitting device of Comparative Example 1 was 1% by weight. Fig. 4 is a graph showing the shift in the crystal orientation distribution of the β-SiAlON phosphor 8 of Comparative Example 1. The area indicated by the slanted line is the Ρ-type Sialon-19-201131823 [0 00 1] crystal plane and the section of the crystal plane of ±30 degrees with respect to the normal direction: the area without the slash is the beta of the other crystal plane Type Cylon phosphor 8. The alignment index of the β-Sialon phosphor 8 calculated by the formula (!) was 22% ^ (measurement result of Comparative Example 2) The luminosity of the light-emitting device of Comparative Example 2 was 8.2%, and β-sialon was obtained. The orientation index of the crystal orientation distribution shift of the phosphor 8 was 19.1%. (Measurement result of Comparative Example 3) The luminosity of the light-emitting device of Comparative Example 3 was 102.8%, and the orientation index of the crystal orientation distribution shift of the β-Sialon phosphor 8 was 16.3%. (Measurement result of Comparative Example 4) The luminescence luminosity of the luminescence device of Comparative Example 4 was 100.9%, and the alignment index of the crystal orientation distribution shift of the β-Sialon phosphor 8 was 3.3%. The results of the luminosity and the alignment index of the white light-emitting device 1 measured in Examples 1 to 4 and Comparative Examples 1 to 4 are shown in Table 1. [Table 1] LED luminosity (%) alignment index (%) Example 1 106.5 13 3 Example 2 103.8 14. 1 Example 3 108.9 11 3 Example 4 104.1 7.3 Comparative Example 1 100.0 22. 0 ratio. 2 98.2 19.1 Comparative Example 3 102.8 16.3 Comparative Example 4 100.9 3.3 Fig. 5 shows the luminosity obtained by the light-emitting devices 1 of Examples 丨 to 4 and Comparative Examples 1 to 4 and the alignment of the β-Sialon phosphor 8 A graph of the relationship of the index -20- 201131823. The vertical axis of Fig. 5 shows the relative luminosity (%) of the light-emitting device 1, and the horizontal axis shows the alignment index (%) of the β-Sialon phosphor 8. As is clear from Fig. 5, the white light emission of Examples 1 to 4 in which the shift in the crystal orientation distribution of the β-sialon phosphor 8 in the wavelength conversion member 5 is adjusted to 5% or more and I5 % or less In the device 1, the luminosity was about 104% to 109% with respect to the light-emitting diode of Comparative Example 1 as a reference, and the average luminosity was increased by about 5%. On the other hand, the alignment index calculated from the crystal orientation distribution of the β-sialon phosphor 8 in the wavelength conversion member 5 is different from the range of the embodiment, that is, 5% or less and 15% or more. In the white light-emitting device 1 of Comparative Examples 1 to 4, it was found that the light-emitting device of Comparative Example 1 which is the reference of the luminosity was about 98% to 103%, which was low with respect to Examples 1 to 4. Therefore, it is understood that the shift of the crystal orientation distribution of the β-sialon phosphor 8 in the wavelength conversion member 5 of the light-emitting device 1 is within a predetermined range, that is, the alignment index is 5% or more and 15% or less, more preferably In the light-emitting device 1 which is 7% or more and 13% or less, the light-emitting device 1 having higher luminous intensity than the conventional light-emitting device can be realized. In the crystal orientation distribution of the phosphor 8 in the wavelength conversion member 5 of the present invention, the light-emitting device 1 having an alignment index within a predetermined range is displayed higher than that of the light-emitting device outside the range of the alignment index. The light-emitting luminance is suitable as a white light-emitting device 1 using blue or ultraviolet light as a light source, and can be suitably used for a lighting fixture, a video display device, or the like.

S - 21 - 201131823 The present invention is not limited to the embodiment, and various modifications are possible within the scope of the invention, and such modifications are of course included in the scope of the invention. For example, the color of the light-emitting device can be changed to a color other than white, for example, by changing the blending ratio of the phosphors 8 emitting H or red. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view showing the structure of a light-emitting device of the present invention. Fig. 2 is a flow chart showing the procedure for analyzing the crystal orientation distribution shift of the crystalline particles in the wavelength converting member of the present invention. Fig. 3 is a graph showing the shift of the crystal orientation distribution of the ?-sialon phosphor of Example 3. Fig. 4 is a graph showing the shift of the crystal orientation distribution of the β-SiAlON phosphor of the comparative example. Fig. 5 is a graph showing the relationship between the luminosity obtained by the illuminating devices of Examples 丨 to 4 and Comparative Examples 1 to 4 and the alignment index of the β-Sialon phosphor. Figure 6 is a cross-sectional view showing a conventional light-emitting diode structure. [Description of main components] 1 illuminating device 2 illuminating light source 3 - lead frame 3a upper portion of lead frame 3b recessed portion for wafer loading of light emitting diode 2 second lead frame -22 - 201131823 5 wavelength conversion member 6 7 Resin 8 Luminous body 9 Gap 60 Light-emitting diode 62 First - Lead frame 64 Reflecting surface 66 Light-emitting diode crystal 68 Second lead frame 70 Cladding line 72 Resin 74 Phosphor 78 Translucent resin material -23

Claims (1)

201131823 VII. Patent application scope: 1. A light-emitting device 'characteristics comprising an illuminating light source and a wavelength _ the wavelength converting member contains one or more light bodies that absorb fluorescence from near ultraviolet to blue light generated through the illuminating light. Particles; at least the crystal orientation distribution of the columnar phosphor particles is analyzed by an electron backscatter diffraction pattern method. The alignment index represented by the following formula (1) is set to be 5% or more and the alignment index (%) = ((corresponding to the cross-sectional area of the phosphor particles having the columnar shape of the particles having a crystal orientation of ±30° on the crystal surface of the columnar-shaped particle surface)) xl〇〇(S 2. Patent Application No. 1 The light-emitting device of the present invention, wherein the light-emitting diode of the light of the wavelength of 300 nm to 500 nm is used. The light-emitting device of claim 1, wherein the firefly has a β-sialon (Sialon). The illuminating device of the first aspect of the invention, wherein the fluorescing device has an alpha type sialon. 5. The illuminating device of claim 1, wherein the fluorescing device has Eu-activated CaAlSiN3 » 6. The invention relates to a light-emitting device according to any one of the above claims. The image display device comprising the light-emitting device according to any one of the claims of the patent application. The columnar flicker shift is less than I 5 % of the cross section; the phosphor area is / (with a light source system wafer. The photosystem containing photosystem contains 5 to 5 - 24 of the 5 items)