201131666 六、發明說明： 【發明所屬之技術領域】 本發明係有關於半導體裝置的製造，特別係有關於一 種底部填充膠之形成方法。 【先前技術】 目前半導體產業中，利用凸塊進行晶片與基板的電性 連接時，於晶片與基板之間必然會產生一接合間隙。然 而’由於晶片與基板兩者係具有不同的熱膨脹係數201131666 VI. Description of the Invention: TECHNICAL FIELD OF THE INVENTION The present invention relates to the manufacture of semiconductor devices, and more particularly to a method of forming an underfill. [Prior Art] In the semiconductor industry, when a bump is used to electrically connect a wafer to a substrate, a bonding gap is inevitably formed between the wafer and the substrate. However, because both the wafer and the substrate have different coefficients of thermal expansion
(Coefficient of Thermal Expansion, CTE)與機械特性，使 得晶片與基板在溫度與應力之作用時，晶片與基板會產 生不同程度的變形’將會對凸塊產生一定的應力，甚至 導致凸塊脫落。如此一來，凸塊將無法發揮電性連接之 功能。因此，為了增加可靠性，通常會在接合間隙中藉 由毛細作用填充一具流動性之底部填充膠（underfiiiing materiai)，再予以固化，底部填充膠能將應力分散至整 個晶片與基板之間，以避免局部凸塊承受過大的應力， 並進一步達到密封保護凸塊之效果。 隨著晶片功能的整合增加，單顆晶片上凸塊的數量逐 漸增加’或是晶片尺寸逐漸縮小，都會使得凸塊間距與 接合間隙更為縮小’進而導致底部填充膠填人不易之問 題產生’特別是極細間距的覆晶凸塊封裝或是採用非矩 陣排列之凸塊的產品都會有底部填充膠不易填滿接合間 隙的問題。例如’在金屬柱烊接晶片連接之技術中，凸 塊間距甚至可達到小於50微米之距離，例如3〇微米， 201131666 而使得凸塊的排列更為密集，故底部填充膠將更難以填 入晶片與基板之間，如此一來將使底部填充膠無法順利 流入此間隙’而造成填隙不良（p〇〇r fili)和内部氣洞 (inner voids)之現象。 如第1圖所示’其為習知的覆晶封裝構造產生氣洞之 截面示意圖。該覆晶封裝構造係包含有一基板11〇、_ 晶片120以及一底部填充膠15〇。該基板11()之上表面 111係覆晶接合該晶片12 〇，並於該基板η 0與該晶片 1 20之間形成一接合間隙i 3 〇，其内設有複數個凸塊 121。該些凸塊121係設有複數個銲料123，用以焊接該 些凸塊121至該基板11〇。此外，該底部填充膠15〇係 填充於該接合間隙130内，以包覆該些凸塊121與該些 銲料123。然而，在填膠製程中，常會因該底部填充膠 150之流動速度不平衡而導致產生氣洞i5i( air trap)之問 題。 ‘ 如第2圖所示，該覆晶封裝構造的.覆晶封裝製程是利 用一點塗工具在設置於該基板110上之該晶片12〇之一 側邊1 22進行塗施該底部填充膠丨5 〇，之後再利用毛細 現象讓該底部填充谬150流入該晶片120與該基板110 之間。由於各種晶片尺寸不一，並且該些凸塊121分佈 隨各種晶片而不同，該些凸塊121之分佈密度、位置亦 有所差異，並且該底部填充膠1 5 0填充之流動速度受到 該些凸塊121分佈影響，倘若填充至凸塊排列較為複雜 的結構時’則會使得該底部填充膠丨5〇之流動速度產生 201131666 差異，以致無法予以有效控制。如第3圖所示，該底部 填充膠15〇填充於該晶片12〇與該基板ιι〇之間時，因 該底部填充穋15G之流動速度不平衡且不易控制易使 該底部填充膠15〇產生回包現象而於内部產生氣洞 151，進而影響了製程良率與可靠度。因此，& 了避免氣 洞151產生，必須要大幅減緩該底部填充膠之填入 速度’因而大幅增加了作業的週期時間（eyeietime)。、 之後，為了能控制該底部填充朦15〇之流動速度，有 人嘗試將該基110傾斜一角《，以提高製程效率。然 而，由於僅是單一方向的傾斜，雖然增加了該底部填充 膠1 50之涛動速度，卻無法有效地控制該底部填充膠玉π 在中央與側邊有相一致之流動速度，甚至更加重了氣洞 的產生。(Coefficient of Thermal Expansion, CTE) and mechanical properties, when the wafer and the substrate are subjected to temperature and stress, the wafer and the substrate may be deformed to different degrees, which will cause certain stress on the bump and even cause the bump to fall off. As a result, the bumps will not function as electrical connections. Therefore, in order to increase the reliability, a fluid underfill layer is usually filled by capillary action in the joint gap and then cured, and the underfill can spread the stress between the entire wafer and the substrate. In order to avoid excessive stress on the local bumps, and further to seal the protective bumps. As the integration of wafer functions increases, the number of bumps on a single wafer gradually increases 'or the size of the wafer gradually shrinks, which will make the bump pitch and the joint gap smaller', which leads to the problem that the underfill is not easy to fill. In particular, a very fine pitch flip chip package or a non-matrix arrangement of bumps may have the problem that the underfill does not easily fill the joint gap. For example, in the technique of metal pillar splicing wafer connection, the bump pitch can reach a distance of less than 50 micrometers, for example, 3 〇 micrometers, 201131666, so that the bumps are arranged more densely, so the underfill will be more difficult to fill. Between the wafer and the substrate, the underfill will not flow smoothly into the gap, resulting in poor interstitial and internal voids. As shown in Fig. 1, it is a schematic cross-sectional view showing a gas hole in a conventional flip chip package structure. The flip chip package structure includes a substrate 11 , a wafer 120 , and an underfill 15 . The upper surface 111 of the substrate 11 is bonded to the wafer 12, and a bonding gap i 3 〇 is formed between the substrate η 0 and the wafer 120, and a plurality of bumps 121 are disposed therein. The bumps 121 are provided with a plurality of solders 123 for soldering the bumps 121 to the substrate 11A. In addition, the underfill 15 is filled in the bonding gap 130 to cover the bumps 121 and the solder 123. However, in the filling process, the problem of the air hole i5i (air trap) is often caused by the unbalanced flow velocity of the underfill 150. As shown in FIG. 2, the flip chip packaging process of the flip chip package structure is performed by applying a one-side coating tape to one side edge 12 of the wafer 12 disposed on the substrate 110 by using a spot coating tool. 5 〇, and then the underfill enthalpy 150 is caused to flow between the wafer 120 and the substrate 110 by capillary action. Since the sizes of the various wafers are different, and the distribution of the bumps 121 varies with various wafers, the distribution density and position of the bumps 121 are also different, and the flow velocity of the underfill filling is affected by the filling speed. The influence of the distribution of the bumps 121, if filled into a structure with a relatively complicated arrangement of the bumps, will cause the flow velocity of the underfill plastic raft to produce a difference of 201131666, so that it cannot be effectively controlled. As shown in FIG. 3, when the underfill 15 is filled between the wafer 12 and the substrate, the flow velocity of the underfill crucible 15G is unbalanced and it is difficult to control the underfill 15〇. The phenomenon of returning to the package creates a gas hole 151 inside, which in turn affects the process yield and reliability. Therefore, & avoiding the generation of the cavity 151, it is necessary to greatly slow down the filling speed of the underfill rubber' thus greatly increasing the eyesight time of the job. Then, in order to control the flow speed of the underfill 朦15〇, some people try to tilt the base 110 to improve the process efficiency. However, since only the inclination of the single direction increases the oscillation speed of the underfill 150, it cannot effectively control the flow velocity of the underfill jade π at the center and the side, even more heavy. The production of gas holes.
【發明内容】 為了解決上述之問題，本發明之主要目的係在於一種 底部填充膠之形成方法’可以根據底部填充膠流動情況 動態改變多種且適當的傾斜角度，使得底部填充膠的流 動速度達到平衡，以避免接合間隙内產生氣洞。 本發明之次一目的係在於提供一種底部填充膠之形 成方法’有助於控制和縮短作業的週期時間。 本發明之再一目的係在於提供一種底部填充膠之形 成方法，能應用於凸塊排列較為複雜的結構，並達成無 氣洞產生的快速底部填充膠形成作業。 本發明的目的及解決其技術問題是採用以下技術方 % 201131666 案來實現的。本發明揭示—種底料轉之形成方法， 主要包含：提供-基板，其上表面覆晶接合有一晶片， 該基板與該晶片之間形成一接合間隙，其内設有複數個 凸塊。裝載該基板於-立體旋轉載台上。塗施_底部填 充穋於該基板在該晶片之—側邊之上表面，其中該基板 位於第-傾斜角度。當該底部填充膠非均句填入該接合 間隙’第-次旋轉該立體旋轉載台以使該基板位於第二 傾斜角度.，該第二傾斜角度依據該些凸塊未被該底部填 充膠包覆的部位相對於該第一傾斜角度作調整。 本發明的目的及解決其技術問題還可採用以下技術 措施進一步實現。 在前述之底部填充膠之形成方法中，該些凸塊係可為 矩陣排列’並且在塗施該底部填充勝時，該底部填充膠 係局部塗施在該晶片之該側邊中央，並且該第一傾斜角 度是使該底部填充膠相對高於該些凸塊。 在前述之底部填充膠之形成方法中，該第二傾斜角度 小於該第-傾斜角度，在第_次旋轉後，可另包含之； 驟為塗施該底部填充膠於該基板在該晶片之該側 邊包含該測邊兩側之上表面。 在前述之底部填充膠之形成方法中，該第二傾斜角度 可使該基板為水平，該第一傾斜角度可約介於ι〇至 度》 在前述之底部填充膠之形成方法中’該些凸塊係可為 非矩陣排列，當該底部填充膠填人該接合間隙t凸塊空 201131666 缺區域過快時，該第二傾斜角度是使該空缺區域相對高 於該些凸塊中未被該底部填充膠包覆的部份。 在前述之底部填充膠之形成方法中，該第一傾斜角度 使該基板為水平，該第二傾斜角度可約介於1〇至度。 在前述之底部填充膠之形成方法中，可另包含之步^ 為：當該底部填充膠填滿該接合間隙三分之二以上時， 第二次旋轉該立體旋轉載台以使該基板位於第三傾斜角 度，其巾該帛三傾斜肖度係大於該第二傾斜肖度而介於 60至90度》 在前述之底部填充膠之形成方法中，該第三傾斜角度 可使該基板為垂直。 在前述之底部填充膠之形成方法中，在塗施該底部填 充膠之後，可利用X光檢測在該基板之第一傾斜角度與 第二傾斜角度時該底部填充膠之填充狀態。 由以上技術方案可以看出，本發明之底部填充膠之形 成方法，有以下優點與功效： 一、可藉由裝載基板於立體旋轉載台、在毛細流動初期 使基板位於第一傾斜角度以及在非均勻填入接合間 隙時旋轉立體旋轉載台以使基板位於第二傾斜角度 等作為本發明技術手段之組合，由於過程中可利用 基板在不同且適當的傾斜角度幫助底部填充膠之填 充形成’係根據底部填充膠在接合間隙内的流動情 況動態調整基板呈多種且適當的傾斜角度，使得底 部填充膠的流動速度達到平衡，以避免接合間隙内 201131666 產生氣洞。 細流動初期 填入接合間 二傾斜角度 控制和縮短 細流動初期 填入接合間 二傾斜角度 於凸塊排列 快速底部填SUMMARY OF THE INVENTION In order to solve the above problems, the main object of the present invention is to form a method for forming an underfill rubber, which can dynamically change various and appropriate tilt angles according to the flow condition of the underfill, so that the flow velocity of the underfill is balanced. To avoid the creation of air holes in the joint gap. A second object of the present invention is to provide a method of forming an underfill that helps to control and shorten the cycle time of the job. A further object of the present invention is to provide a method for forming an underfill, which can be applied to a structure in which the bumps are arranged in a relatively complicated manner, and to achieve a rapid underfill forming operation without void generation. The object of the present invention and solving the technical problems thereof are achieved by the following technique % 201131666. The present invention discloses a method for forming a primer, which mainly comprises: providing a substrate, wherein a wafer is bonded to the upper surface thereof, and a bonding gap is formed between the substrate and the wafer, and a plurality of bumps are disposed in the substrate. The substrate is loaded on a three-dimensional rotating stage. The applicator_bottom is filled on the surface of the substrate on the side of the wafer, wherein the substrate is at a first-tilt angle. When the underfill is filled into the joint gap, the stereo rotating stage is rotated for the second time to make the substrate at a second tilt angle. The second tilt angle is not filled with the underfill according to the bumps. The covered portion is adjusted relative to the first angle of inclination. The object of the present invention and solving the technical problems thereof can be further realized by the following technical measures. In the foregoing method for forming an underfill, the bumps may be in a matrix arrangement 'and when the underfill is applied, the underfill is partially applied to the center of the side of the wafer, and the The first tilt angle is such that the underfill is relatively higher than the bumps. In the above method for forming the underfill, the second tilt angle is smaller than the first tilt angle, and after the _th rotation, may be further included; the bottom fill is applied to the substrate on the wafer The side edge includes the upper surface on both sides of the edge. In the foregoing method for forming the underfill, the second tilt angle may make the substrate horizontal, and the first tilt angle may be about ι〇至度. In the foregoing method for forming the underfill, The bump system may be a non-matrix arrangement. When the underfill filler fills the joint gap t, the bump region is too fast, and the second tilt angle is such that the void region is relatively higher than the bumps. The underfill coated portion. In the foregoing method of forming an underfill, the first tilt angle is such that the substrate is horizontal, and the second tilt angle is about 1 〇 to a degree. In the foregoing method for forming the underfill, the method further includes: when the underfill fills more than two-thirds of the bonding gap, rotating the stereo rotating stage a second time to position the substrate a third tilting angle, wherein the third tilting angle is greater than the second tilting angle and is between 60 and 90 degrees. In the foregoing method of forming the underfill, the third tilting angle enables the substrate to be vertical. In the above method of forming the underfill, after the underfill is applied, X-rays can be used to detect the filling state of the underfill at the first tilt angle and the second tilt angle of the substrate. It can be seen from the above technical solution that the method for forming the underfill rubber of the present invention has the following advantages and effects: 1. The substrate can be placed at the first tilt angle and at the initial stage of capillary flow by loading the substrate on the stereo rotating stage. When the non-uniform filling is engaged in the joint gap, the stereo rotating base is rotated to make the substrate at the second inclination angle or the like as a combination of the technical means of the present invention, since the substrate can be used to assist the filling of the underfill at different and appropriate inclination angles during the process. According to the flow condition of the underfill in the joint gap, the substrate is dynamically adjusted in various angles and appropriate angles, so that the flow velocity of the underfill is balanced to avoid gas holes in the joint gap 201131666. Initial stage of fine flow Filling in joints Two tilting angles Control and shortening Initial stage of fine flow Filling in joints Two angles of inclination in the arrangement of bumps Quick bottom filling
可藉由裝載基板於立體旋轉載台、在毛 使基板位於第一傾斜角度以及在非均勻 隙時旋轉立體旋轉載台以使基板值於第 等作為本發明技術手段之組合，有助於 底部填充膠形成作業的週期時間。、 可藉由裝載基板於立體旋轉載台、在毛 使基板位於第一傾斜角度以及在非均勻 隙時旋轉iL體旋轉載台以使基板位於第 等作為本發明技術手段之組合，能應用 較為複雜的結構，並達成無氣洞產生的 充膠形成作業。 四、可藉由裝載基板於立體旋轉載台、在毛細流動初期 使基板位於第一傾斜角度以及在非均句填入接合間 隙時旋轉立體旋轉載台以使基板位於第二傾斜角度 等作為本發明技術手段之組合，更當底部填充膠填 滿接合間隙三分之二以上時，旋轉該立體旋轉載台 以使基板位於第三傾斜角度，故可加快底部填充膠 於形成末段時的流動速度，進而提升整體製程效率。 【實施方式】 以下將配合所附圖示詳細說明本發明之實施例，然應 注意的是’該些圖示均為簡化之示意圖，僅以示意方法 來說明本發明之基本架構或實施方法，故僅顯示與本案 有關之元件與組合關係’圖中所顯示之元件並非以實際 201131666 實施之數目、形狀、尺寸做等比例繪製，某些尺寸比例 與其他相關尺寸比例或已誇張或是簡化處理，以提供更 清楚的描述。實際實施之數目、形狀及尺寸比例為一種 選置性之設計，詳細之元件佈局可能更為複雜。 依據本發明之第一具體實施例，一種底部導充膠之形 成方法舉例說明於第4A至11B圖之基板上表面示意圖 與截面示意圖。 首先，請參閱第4A與4B圖所示，提供一基板21〇, 其上表面211覆晶接合有一晶片220，該基板21〇與該 晶片220之間形成一接合間隙230，其内設有複數個凸 塊221。在本實施例中，覆晶接合型態為「金屬柱焊接 晶片連接」（Metal P0st Solder-Chip Connection， MPS-C2)，該些凸塊221為高密度排列並為金屬柱，例 如銅柱、鋁柱、金柱、鎳金柱或高溫銲料柱，可利用電 鍍方式以形成柱狀。如第4B圖所示，該些凸塊221之 端面可設有複數個銲料223，用以接合至該基板21〇之 連接墊（圖中未繪出）。該些銲料223係可預先沾黏於該 些凸塊221之端面，並藉由一迴焊步驟使該些銲料 焊接該些凸塊221至該基板210之連接墊，以達成電性 連接與晶片結合。詳細而言，該基板2丨〇係可為—印刷 電路板（printed. Circuit board，PCB)，作為半導體封裝結 構内晶片220承载與電性連接之媒介物。該晶片22〇係 為已形成有積體電路（integrated circuit，1C)之元件，例 如記憶體、邏輯元件以及特殊應用積體電路（ASIC)，可 201131666 由一晶圓（wafer)分割成顆粒狀。 ' 請參閱第5A與5B圖所示，裴載該基板21〇於一立 體旋轉載台240上。具體而言，該立體旋轉載台24〇係 可為一可二軸移動之工作平台（w〇rking plate) ’能執行三 維方向的移動，包含載台面旋轉與至少一方向之任意傾 斜角度。該立體旋轉載台24〇之下方可設有一旋轉樞軸 241用以支持該立體旋轉載台240，如一機械手臂之關 鲁 節’以提供傾斜角度。該立體旋轉載台24〇並可吸附該 基板210。在一較佳實施例中’該立體旋轉載台24〇係 可為空氧吸附式載台，利用真空負壓來吸附該基板 210以達到裝載時方便固定該基板21〇之目的，有利於 填膠作業之進行，能避免機械夾傷該基板210。此外， 該立體旋轉載台24〇係可具有加熱功能，以幫助底部填 充谬的流動。 請參閱第6A與6B圖所示，藉由一點塗工具1〇，塗 • 施一底部填充膠25〇於該基板210在該晶片22〇之一側 邊222之上表面211，其中該基板210位於第一傾斜角 度^!。在一較佳實施例中，該第一傾斜角度係可為 45度左右，以促使該底部填充膠250形成由高向低之流 動趨勢，故藉由重力配合該底部填充膠250本身所具有 的高流動性，能夠增加該底部填充膠250朝向該晶片22〇 的流動速度。在本實施例中，由該點塗工具1 〇為單點注 膠，所提供之該底部填充膠250集中在該側邊222之中 央’故該底部填充膠250在該接合間隙230的中央部位 10 201131666 流動速度會較快。此外，在本實施例中，該些凸塊221 係可為矩陣排列’並由於塗施該底部填充膠250時，該 底部填充膠250係局部塗施在該晶片220之該側邊222 中央，故該第一傾斜角度0 1是使該底部填充膠25〇相對 高於該些凸塊221(如第7A與7B圖所示）。 請參閱第7A與7B圖所示，該底部填充膠250為非 均勻填入該接合間隙230。在本實施例中，該底部填充 膠250為先行填充該接合間隙23〇的中央部位。在此所 稱的「非均勻」程度係表示該底部填充膠25〇由該側邊 222中央往内的流動邊界超過在該側邊222兩側邊緣流 動邊界至少兩個凸塊間距以上。在此(時，請參閱第8A 與8B圖所示’第一次旋轉該立體旋轉載台24〇以使該 基板210位於第二傾斜角度02，該第二傾斜角度02依 據諱些凸塊221未被該底部填充膠250包覆的部位相對 於該第一傾斜角度0 1作調整。在本實施例中，第一次旋 轉為YZ轴面的旋轉但可無載台面之旋轉，即利用該旋 轉樞軸24 1作旋轉，以減少該基板21 〇之傾斜角度。其 中’X轴為該立體旋轉載台240回復至基準點時平行於 該侧邊222之水平轴，γ軸為該立體旋轉載台240回復 至基準點時垂直於該側邊222之水平軸，Z轴則為垂直 軸。第二傾斜角度02可接近或為零度，使該立體旋轉載 台240呈現水平狀態’以減緩該底部填充膠25〇之中央 流動速度。在一較佳實施例中，在塗施該底部填充膠250 之後，可利用X光檢測在該基板2 1 0之第一傾斜角度0 201131666 1與第二傾斜角度0 2時該底部填充膠250之填充狀態。 因此’作業人員能隨時掌握該底部填充膠250之填充狀 態’並適當控制該立體旋轉載台240之傾斜角度，可供 後續程式化操作參考，以使該底部填充膠25〇能平穩地 朝向該些凸塊221未被該底部填充膠250包覆的部位流 動。 請參閱第9Α與9Β圖所示，在一較佳實施例中，在 第一次旋轉後’可另包含之步驟為：補充塗施該底部填 充膠250於該基板210在該晶片220之該侧邊222包含 該側邊222兩側之上表面211。由於該底部填充膠250 在流經該些凸塊22 1時會因受到阻礙而降低流動速度， 當在該底部填充膠250已向内填充一適當距離之後，須 於該側邊222兩側補充塗施該底部填充膠250，以使該 底部填充膠250能均勻地填充於該晶片220與該基板 210之間。更具體地，在上述各步驟中，該第二傾斜角 度02可使該基板210為水平，該第一傾斜角度約介 於10至60度，也就是說該第二傾斜角度係小於該第 —傾斜角度θι。在第一次旋轉之後，該底部填充膠25〇 在該晶片220兩側之流動速度會高於在該晶片22〇中央 之流動速度’但由於在該晶片220中央已先有非均勻的 填入，故不會有回包現象。 請參閱第10Α與10Β圖所示’當該底部填充膠250 填滿該接合間隙2 3 〇二分之二以上時，在一較佳實施例 中可進行一第二次旋轉步驟，其中在第二次旋轉步驟之 12 201131666 • 前，該底部填充膠250係已均句地填充於該晶片22〇與 - 肖基板210之間，並且包覆大部分之該些凸塊221。 如第11A與11B圖所示，第二次旋轉之後，經由該 立體旋轉載台240以使該基板21〇位於第三傾斜角度0 3其中該第二傾斜角度係大於該第二傾斜角度02 而介於60至90度。在本實施例中，第二次旋轉亦為γζ 轴面之旋轉但可無載台面之旋轉，即利用該旋轉樞軸 φ 241作旋轉，在第二次旋轉中增加了諒基板21〇之傾斜 角度’除了能利用該底部填充膠25〇由高向低流動之流 體特性外’加上該底部填充膠25〇本身之重力，以加快 該底部填充膠250於末段時的流動速度，進而提升整體 製程效率。在一較佳實施例中，該第三傾斜角度Θ 3可使 該基板210為垂直。 在本發明中，本發明技術手段之組合至少包含可藉由 該基板210裝載於該立體旋轉載台24〇、在毛細流動初 • 期使該基板210位於第一傾斜角度以及該底部填充膠25 在非均勻填入該接合間隙230時旋轉該立體旋轉載台 240以使該基板210位於第二傾斜角度等。由於作業人 員可將該基板210裝載於該立體旋轉載台24〇上，在過 程中能夠利用該基板210在不同且適當的傾斜角度幫助 該底部填充膠250之填充形成，故可以根據該底部填充 膠250在該接合間隙230内之流動情況動態調整該基板 210呈多種且適當的傾斜角度，使得該底部填充膠25〇 的流動速度達到平衡’以避免於該接合間隙2 3 〇内產生 ί S3 13 201131666 氣洞（air trap) 〇在製程設定中，作業人員可進行微調並 找出最佳情況而設定為一程式，以應用於大量生產之製 程。特別是，該程式係可依據各種情況而設定有特定參 數，以對應於不同製程。所謂的「特定參數」係可包含 有載台傾斜角度、載台面旋轉角度以及保持時間，其中 載台傾斜角度即是該基板210在γζ軸面之傾斜角度， 例如該第一傾斜角度、該第二傾斜角度02與該第三 傾斜角度01，而載台面旋轉角度即是該立體旋轉載台 240的承載面旋轉程度，並配合時間設定構成程式，以 使填膠過程中該立體旋轉載台24〇在適當時間自動完成 三維方向的移動。因此，在本發明之底部填充膠之形成 中了變因素除了以往的注膠時間（叫ect以削）和點 膠路彳二（dispense path)之外，還能提供基板在不同的傾斜 角度的動態調整作為一有益的新可變因素，有助於控制 和縮短作業的週期時間“me)。因此，本發明能應 用於凸塊排列較為複雜的結構，並達成無氣洞產生的快 速底。P填充膠形成作業’而所謂「複雜的結構」係可如 金屬柱焊接晶片連接(Metal Post Solder-Chip Connection， 與非矩陣排列之凸塊的產品。 ，依據本發明之第二具體實施例，另一種底部填充膠之 形成方法舉例說明於第12A至16B圖之基板上表面示意 、/、’面示意圖。其中與第一實施例相同的主要元件將 以相同符號標示’故不再詳予贅述。 首先，睛參閱第12A與12B圖所示，提供一基板210, 14 201131666The bottom can be assisted by loading the substrate on the stereo rotating stage, rotating the solid tilting stage when the substrate is at the first tilt angle, and rotating the stereo rotating stage in the non-uniform gap to make the substrate value in the combination of the technical means of the present invention. The cycle time of the filling glue forming operation. The invention can be applied by loading the substrate on the stereo rotating stage, rotating the iL body rotating stage when the substrate is at the first tilt angle, and rotating the iL body rotating stage in the non-uniform gap to make the substrate be the same as the technical means of the present invention. The complex structure and the filling formation operation without air holes. 4. The substrate can be placed on the three-dimensional rotating stage, the substrate can be placed at the first tilt angle at the initial stage of capillary flow, and the three-dimensional rotating stage can be rotated when the non-uniform sentence is filled into the joint gap, so that the substrate is at the second tilt angle. The combination of the technical means of the invention, when the underfill fills more than two-thirds of the joint gap, rotating the three-dimensional rotating stage to make the substrate at the third inclination angle, thereby accelerating the flow of the underfill at the end of the formation Speed, which in turn improves overall process efficiency. The embodiments of the present invention will be described in detail below with reference to the accompanying drawings, in which Therefore, only the components and combinations related to the case are displayed. The components shown in the figure are not drawn in proportion to the number, shape and size of the actual 201131666 implementation. Some size ratios are proportional to other related dimensions or have been exaggerated or simplified. To provide a clearer description. The actual number, shape and size ratio of the implementation is an optional design, and the detailed component layout may be more complicated. According to a first embodiment of the present invention, a method of forming a bottom via filler is illustrated in a schematic view and a cross-sectional view of the upper surface of the substrate of Figs. 4A to 11B. First, as shown in FIGS. 4A and 4B, a substrate 21 is provided. The upper surface 211 is flip-chip bonded to a wafer 220, and a bonding gap 230 is formed between the substrate 21 and the wafer 220. Bumps 221. In this embodiment, the flip chip bonding type is "Metal P0st Solder-Chip Connection" (MPS-C2), and the bumps 221 are arranged in a high density and are metal pillars, such as copper pillars. Aluminum columns, gold columns, nickel gold columns or high temperature solder columns can be plated by electroplating. As shown in Fig. 4B, the end faces of the bumps 221 may be provided with a plurality of solders 223 for bonding to the pads of the substrate 21 (not shown). The solder 223 is pre-adhered to the end faces of the bumps 221, and the solder is soldered to the connection pads of the substrate 210 by a reflow process to achieve electrical connection and wafer bonding. Combine. In detail, the substrate 2 can be a printed circuit board (PCB) that serves as a carrier for electrically and electrically connecting the wafer 220 within the semiconductor package structure. The wafer 22 is an element in which an integrated circuit (1C) has been formed, such as a memory, a logic element, and an application specific integrated circuit (ASIC), which can be divided into a pellet by a wafer. . Referring to Figures 5A and 5B, the substrate 21 is mounted on a vertical rotating stage 240. Specifically, the three-dimensional rotary stage 24 can be a two-axis movable work platform that can perform three-dimensional movement, including the rotation of the stage and any inclination angle of at least one direction. A rotating pivot 241 can be disposed under the three-dimensional rotating stage 24 to support the three-dimensional rotating stage 240, such as a mechanical arm, to provide an angle of inclination. The three-dimensional rotating stage 24 〇 can adsorb the substrate 210. In a preferred embodiment, the three-dimensional rotating stage 24 can be an air-oxygen adsorption type carrier, and the vacuum substrate is used to adsorb the substrate 210 to facilitate the fixation of the substrate 21 during loading, which is beneficial for filling. The bonding operation can be performed to avoid mechanical damage to the substrate 210. In addition, the three-dimensional rotary stage 24 can have a heating function to help the bottom fill the flow of the crucible. Referring to FIGS. 6A and 6B, an underfill adhesive 25 is applied to the substrate 210 at the upper surface 211 of the side edge 222 of the substrate 22, wherein the substrate 210 is applied. Located at the first tilt angle ^!. In a preferred embodiment, the first angle of inclination may be about 45 degrees to promote the flow of the underfill 250 from high to low, so that the underfill 250 itself is supported by gravity. High fluidity can increase the flow rate of the underfill 250 toward the wafer 22〇. In the present embodiment, the dispensing tool 1 is a single-point injection, and the underfill 250 is concentrated in the center of the side 222. Therefore, the underfill 250 is at the center of the bonding gap 230. 10 201131666 The flow rate will be faster. In addition, in the embodiment, the bumps 221 may be in a matrix arrangement 'and the underfill 250 is partially applied to the center of the side 222 of the wafer 220 due to the application of the underfill 250. Therefore, the first tilt angle 0 1 is such that the underfill 25 〇 is relatively higher than the bumps 221 (as shown in FIGS. 7A and 7B ). Referring to Figures 7A and 7B, the underfill 250 is non-uniformly filled into the joint gap 230. In the present embodiment, the underfill rubber 250 is a central portion that fills the joint gap 23A first. The term "non-uniform" as used herein means that the underfill 25's flow boundary from the center of the side 222 is greater than the flow boundary of the sides of the side 222 by at least two bumps. Here (refer to FIGS. 8A and 8B), the first rotation of the stereo rotating table 24 is rotated so that the substrate 210 is at the second tilt angle 02, and the second tilt angle 02 is based on the bumps 221 The portion not covered by the underfill rubber 250 is adjusted with respect to the first tilt angle 0 1. In the embodiment, the first rotation is the rotation of the YZ axis surface, but the rotation of the loading table can be performed, that is, the The rotation pivot 24 1 rotates to reduce the inclination angle of the substrate 21, wherein the 'X axis is the horizontal axis parallel to the side edge 222 when the stereo rotation stage 240 returns to the reference point, and the γ axis is the stereo rotation. The transfer stage 240 returns to the reference point perpendicular to the horizontal axis of the side 222, and the Z axis is the vertical axis. The second tilt angle 02 can be close to or zero degrees, causing the stereo rotating stage 240 to assume a horizontal state to slow down the The central flow velocity of the underfill 25 。. In a preferred embodiment, after applying the underfill 250, the first tilt angle of the substrate 2 10 can be detected by X-rays 0 201131666 1 and the second The filling state of the underfill 250 when the tilt angle is 0 2 Therefore, 'the operator can grasp the filling state of the underfill 250 at any time' and appropriately control the tilt angle of the stereo rotating stage 240 for reference for subsequent stylization operations, so that the underfill 25 平稳 can smoothly face the The bumps 221 are not flowed by the portion covered by the underfill 250. Referring to Figures 9 and 9A, in a preferred embodiment, after the first rotation, the steps that may be additionally included are: Applying the underfill 250 to the substrate 210 includes the upper surface 211 of the side 222 on the side 222 of the wafer 220. Since the underfill 250 flows through the bumps 22 1 Obscuring to reduce the flow rate. After the underfill 250 has been filled inwardly for an appropriate distance, the underfill 250 must be applied to both sides of the side 222 to make the underfill 250 evenly Filled between the wafer 220 and the substrate 210. More specifically, in the above steps, the second tilt angle 02 can make the substrate 210 horizontal, the first tilt angle is about 10 to 60 degrees, That is to say the second tilt The degree is less than the first-inclination angle θι. After the first rotation, the flow rate of the underfill 25 两侧 on both sides of the wafer 220 is higher than the flow velocity in the center of the wafer 22 但 but due to the wafer There is a non-uniform filling in the center of 220, so there will be no returning. Please refer to Figures 10 and 10, when the underfill 250 fills the joint gap by more than two-thirds. In a preferred embodiment, a second rotation step can be performed, wherein the underfill 250 is uniformly filled on the wafer 22 and the swash plate 210 before the second rotation step 12 201131666. And covering most of the bumps 221 between them. As shown in FIGS. 11A and 11B, after the second rotation, the stage 240 is rotated via the stereo to position the substrate 21 at a third tilt angle 0 3 , wherein the second tilt angle is greater than the second tilt angle 02. Between 60 and 90 degrees. In this embodiment, the second rotation is also a rotation of the γζ axis surface, but the rotation of the turret can be unloaded, that is, the rotation pivot φ 241 is used for rotation, and the inclination of the substrate 21 is increased in the second rotation. The angle 'in addition to the use of the underfill 25 〇 from high to low flow fluid characteristics 'plus the weight of the underfill 25 〇 itself to speed up the flow of the underfill 250 at the end, and thus improve Overall process efficiency. In a preferred embodiment, the third tilt angle Θ 3 causes the substrate 210 to be vertical. In the present invention, the combination of the technical means of the present invention includes at least the substrate 210 being loaded on the stereo rotating stage 24, the substrate 210 being at the first tilt angle and the underfill 25 at the beginning of the capillary flow. The stereo rotating stage 240 is rotated when the joint gap 230 is not uniformly filled so that the substrate 210 is at the second inclination angle or the like. Since the operator can load the substrate 210 on the stereo rotating stage 24, in the process, the substrate 210 can be used to help the filling of the underfill 250 at different and appropriate tilt angles, so that the underfill can be used according to the underfill. The flow of the glue 250 in the joint gap 230 dynamically adjusts the substrate 210 to a plurality of and appropriate tilt angles such that the flow velocity of the underfill 25 达到 is balanced to avoid generating ί S3 in the joint gap 2 3 〇 13 201131666 Air trap In the process setting, the operator can fine-tune and find the best case and set it as a program for mass production. In particular, the program can be set with specific parameters depending on various conditions to correspond to different processes. The "specific parameter" may include a stage tilt angle, a stage rotation angle, and a hold time, wherein the stage tilt angle is an inclination angle of the substrate 210 on the γ-axis plane, for example, the first tilt angle, the first The tilt angle 02 and the third tilt angle 01, and the rotation angle of the stage is the degree of rotation of the bearing surface of the stereo rotating stage 240, and the time setting is used to configure the stereo rotating stage 24 during the filling process.自动 Automatically complete the movement in the three-dimensional direction at the appropriate time. Therefore, in the formation of the underfill of the present invention, in addition to the conventional injection time (called ect to cut) and the dispensing path, the substrate can be provided at different inclination angles. Dynamic adjustment, as a beneficial new variable, helps to control and shorten the cycle time "me) of the job. Therefore, the present invention can be applied to a structure in which the bumps are arranged more complicated, and a fast bottom without air holes is achieved. The P-filler forming operation 'the so-called "complex structure" can be a metal post soldering-chip connection (product of a non-matrix arrangement of bumps. According to the second embodiment of the present invention, Another method for forming the underfill is exemplified in the schematic diagram of the upper surface of the substrate of FIGS. 12A to 16B, and the same components as those of the first embodiment will be denoted by the same reference numerals, and therefore will not be described in detail. First, as shown in Figures 12A and 12B, a substrate 210, 14 201131666 is provided.
其上表面211覆晶接合有一晶片220’該基板210與該 晶片220之間形成一接合間隙230 ’其内設有複數個凸 塊221。並且，裝載該基板210於一立體旋轉載台240 上。接著，請再參閱第12A與12B圖所示，藉由一點塗 工具10，塗施一底部填充膠250於該基板210在該晶片 220之一側邊222之上表面211，其中該基板210位於第 一傾斜角度1。在本實施例中，該底部填充膠250係以 塗畫方式可均勻塗施於該晶片220之一側邊222，並且 該第一傾斜角度01係可為〇度，也就是說該基板210 係呈水平狀態。 請參閲第13A與13B圖所示，該底部填充膠250非 均勻填入該接合間隙2 3 0。在本實施例中，該些凸塊2 2 1 係可為非矩陣排列（如第1 2A圖所示），當該底部填充膠 250填入該接合間隙23〇時會較快填滿該凸塊空缺區域 231。在本實施例中所稱的「非均勻」程度係表示該底部 填充膠250於該空缺區域231之流動邊界超過該晶片 220下设有該些凸塊221之凸塊矩陣區域之流動邊界至 少兩個凸塊間距以上。 此時’請參閱第14A血14只園6(- 咕 , ” 14B圖所不，第一次旋轉該 立體旋轉載台240以伸兮其此 便该基板210位於第二傾斜角度0 2 ’該第二傾斜角度依攄 依據該些凸塊221未被該底部填 充膠2 5 0包覆的部彳☆ 士日批# P位相對於該第一傾斜角度Θ 1作調 整。在本實施例中，第_ _ 乐人旋轉係包含載台面之旋轉與 YZ軸面的傾斜旋轉，以对 、 以改變該側邊222非平行於X勒 201131666 - 並增加該基板210之傾斜角度》具體而言’在執行第一 : 次旋轉之後’該基板210呈現傾斜狀態，該些凸塊221 未被該底部填充膠250包覆的部位相對位於較低之位 置’有助於該底部填充膠25 0之填滿。換言之，當該底 部填充膠250先行填滿該接合間隙23〇中凸塊空缺辱域 23 1而產生非均勻填入現象時，該第二傾斜角度0 2是使 該空缺區域23 1相對高於該些凸塊22 1中未被該底部填 鲁 充膠250包覆的部份。具體而言，該第一傾斜角度0! 可使該基板210為水平’該第二傾斜角度02約介於10 至60度’故該第一傾斜角度0 1係小於該第二傾斜角度 02。較佳地，由於該立體旋轉載台24 0係可進行立體旋 轉作動’故能夠適時地針對該底部填充膠250於該接合 間隙23 0内的流動情況作動態調整，進而改變該基板2 j 〇 呈多種且適當的傾斜角度，以準確控制該底部填充膠 250之流動方向。 參 請參閱第15A與15B圖所示，在第一次旋轉之後， 該底部填充膠250可均勻填滿該接合間隙230三分之二 以上’不會有回包現象。這是因為該基板21〇位於該第 二傾斜角度6> 2 ’可控制該底部填充膠25〇之流動方向， 使得該底部填充膠250在尚未填滿該些凸塊221間之流 動速度趨於平衡，以平穩地填充於該晶片22〇與該基板 210之間。在一較佳實施例中，當該底部填充膠25〇填 滿該接合間隙230三分之二以上時，進行第二次旋轉步 驟。在本實施例中，第二次旋轉係包含載台面之旋轉與 16 201131666 YZ轴面的傾斜旋轉，以回復該側邊222平行於X轴並 更進一步增加該基板21〇之，傾斜角度。如第16Α與16Β 圖所示，在第二次旋轉之後，藉由該立體旋轉載台240 以使該基板2 1 〇位於第三傾斜角度0 3，其中該第三傾斜 角度6»3係大於該第二傾斜角度02而介於60至90度。 在此步驟中，該基板210係可呈垂直狀態，以加速該底 部填充穋250於末段時的流動速度。 雖然本實施例之該些凸塊22 1係為非矩陣排列，依然 能夠藉由該立體旋轉載台24〇的動態傾斜或旋轉使該基 板210在填充過程有不同而適當的傾斜角度，以平衡該 底部填充膠250之流動速度，方便以程式控制達成該底 部填充膠2 5 0之無氣洞的快速形成作業。 以上所述，僅是本發明的較佳實施例而已，並非對本 發明作任何形式上的限制，雖然本發明已以較佳實施例 揭路如上’然而並非用以限定本發明任何熟悉本項技 術者’在不脫離本發明之技術範圍内，所作的任何簡單 修改、等效性變化與修飾’均仍屬於本發明的技術範圍 【圖式簡單說明】 :二:為習知的覆晶封農構造產生氣洞之截面示“ .為習知的覆晶封裝構造在形成底部填充膠之 之基板上表面示意圖。 第3圖：為習知的覆晶封裝椹、皮 籌&•在填充底部填充膠時 基板上表面示意圖。 17 201131666 第4A與4B圖：依據本發明之第—具體實施例的一種底 部填充膠之形成方法在「提供基板」步驟中之 基板上表面示意圖與截面示意圖。 第5 A與5B圖：依據本發明之第—具體實施例的一種底 部填充膠之形成方法在「裝載基板」步驟中之 基板上表面示意圖與截面示意圖。 第6A與6B圖：依據本發明之第—具體實施例的一種底 部填充膠之形成方法在「塗施底部填充膠」步 驟中之基板上表面示意圖與截面示意圖。 第7A與7B圖：依據本發明之第_具體實施例的一種底 部填充膠之形成方法在「塗施底部填充膠」步 驟之後底部填充膠呈非均勻填充之基板上表面 示意圖與截面示意圖。 第8A與8B圖：依據本發明之第一具體實施例的一種底 部填充膠之形成方法在「第一次旋轉」步驟中 之基板上表面示意圖與截面示意圖。 第9A與9B圖：依據本發明之第一具體實施例的一種底 邛填充膠之形成方法在「補充塗施底部填充膠」 步驟中之基板上表面示意圖與截面示意圖。 第10A與10B圖：依據本發明之第一具體實施例的—種 底卽填充膠之形成方法在底部填充膠填滿接合 間隙三分之二以上時之基板上表面示意圖與截 面示意圖。 第11A與11B圖：依據本發明之第一具體實施例的—種 18 201131666 底部填充膠之形成方法在「第二次旋轉」步驟 中之基板上表面示意P與截面示意圖。 第12A與124B圖：依據本發明之第二具體實施例的一 種底部填充膠之形成方法在「塗施底部填充膠J 步驟中之基板上表面示意圖與截面示意圖。 第13A與13B圖：依據本發明之第二具體實施例的一種 底部填充膠之形成方法在「塗施底部填充膠」 步驟之後底部填充膠呈非均勻填充之基板上表 面示意圖與截面示意圖。 第14A與14B圖：依據本發明之第二具體實施例的一種 底部填充膠之形成方法在「第一次旋轉」步驟 中之基板上表面示意圖與截面示意圖。 第15A與15B圖：依據本發明之第二具體實施例的一種 底部填充膠之形成方法在底部填充膠填滿接合 間隙二分之二以上時之基板上表面示意圖與截 面示意圖。 第16Λ與16B圖：依據本發明之第二具體實施例的—種 底部填充膠之形成方法在「第二次旋轉」步驟 中之基板上表面示意圖與截面示意圖。 【主要元件符號說明】 10 點塗工具 no基板 ill上表面 120晶片 121凸塊 122側邊 123銲料 19 201131666 130 接 合 間 隙 150 底 部 填 充 膠 151 氣 洞 210 基板 211 上 表 面 220 晶 片 221 凸 塊 222 側 邊 223 銲料 230 接 合 間 隙 231 空 缺 區域 240 立 體 旋轉載 台 241旋轉柩軸 25C 底 部 填 充 膠 θ ! 第 一 傾 斜 角 度 θ 2 第 二 傾 斜 角 度 θ 3 第 二 傾 斜 角 度 [s] 20The upper surface 211 is flip-chip bonded to a wafer 220'. The substrate 210 and the wafer 220 form a bonding gap 230' in which a plurality of bumps 221 are disposed. Further, the substrate 210 is loaded on a stereo rotating stage 240. Next, referring to FIGS. 12A and 12B, an underfill adhesive 250 is applied to the substrate 210 on the upper surface 211 of the side 222 of the wafer 220 by the one-point coating tool 10, wherein the substrate 210 is located. The first tilt angle is 1. In this embodiment, the underfill 250 is uniformly applied to one side 222 of the wafer 220 in a painting manner, and the first tilt angle 01 can be a twist, that is, the substrate 210 is Horizontal. Referring to Figures 13A and 13B, the underfill 250 is not uniformly filled into the joint gap 203. In this embodiment, the bumps 2 2 1 may be arranged in a non-matrix arrangement (as shown in FIG. 2AA ), and the underfill will fill the convex gap 23 较 when filling the joint gap 23〇. Block vacancy area 231. The degree of "non-uniformity" in the present embodiment means that the flow boundary of the underfill 250 in the void region 231 exceeds the flow boundary of the bump matrix region in which the bumps 221 are disposed under the wafer 220. Above the bump pitch. At this time, please refer to the 14A blood 14 garden 6 (- 咕, ” 14B diagram, the first rotation of the stereo rotation stage 240 to stretch it, the substrate 210 is located at the second inclination angle 0 2 ' The second tilting angle is adjusted according to the portion of the bumps 221 that is not covered by the underfill rubber 250, with respect to the first tilt angle Θ 1. In this embodiment, The __ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ After performing the first: after the second rotation, the substrate 210 is in a tilted state, and the portions of the bumps 221 not covered by the underfill 250 are relatively located at a lower position to help fill the underfill 25 0. In other words, when the underfill 250 first fills the bump vacancy field 23 1 in the joint gap 23 而 to cause a non-uniform filling phenomenon, the second tilt angle 0 2 is such that the vacant area 23 1 is relatively high. The portion of the bumps 22 1 that is not covered by the bottom filling adhesive 250 Specifically, the first tilt angle 0! can make the substrate 210 horizontal. The second tilt angle 02 is about 10 to 60 degrees. Therefore, the first tilt angle 0 1 is smaller than the second tilt angle 02. Preferably, since the stereo rotating stage 204 can perform a stereo rotation operation, the flow of the underfill 250 in the joint gap 23 0 can be dynamically adjusted in time, thereby changing the substrate 2 j 〇 A variety of suitable tilt angles are provided to accurately control the flow direction of the underfill 250. Referring to Figures 15A and 15B, after the first rotation, the underfill 250 can evenly fill the joint gap. 230-third or more 'will not have a return phenomenon. This is because the substrate 21 〇 is located at the second inclination angle 6 > 2 ' can control the flow direction of the underfill 25 , so that the underfill 250 is The flow velocity between the bumps 221 that have not been filled tends to be balanced to be smoothly filled between the wafer 22 and the substrate 210. In a preferred embodiment, when the underfill 25 is filled Joint gap 230 three-thirds When two or more, the second rotation step is performed. In the embodiment, the second rotation system includes the rotation of the stage and the tilting rotation of the 16 201131666 YZ axis to restore the side 222 parallel to the X axis and further Increasing the tilt angle of the substrate 21. As shown in FIGS. 16 and 16B, after the second rotation, the stage is rotated by the stereo to rotate the substrate 2 1 to a third tilt angle of 0 3 , wherein The third tilt angle 6»3 is greater than the second tilt angle 02 and is between 60 and 90 degrees. In this step, the substrate 210 can be in a vertical state to accelerate the bottom fill cassette 250 at the end. Flow speed. Although the bumps 22 1 of the embodiment are non-matrix arrays, the substrate 210 can be balanced by a different tilt angle during the filling process by the dynamic tilt or rotation of the stereo rotating stage 24 以. The flow speed of the underfill 250 facilitates rapid control of the formation of the underfill without voids by program control. The above is only a preferred embodiment of the present invention, and is not intended to limit the present invention in any way, although the present invention has been disclosed by the preferred embodiments as described above. Any simple modifications, equivalent changes, and modifications made by those skilled in the art without departing from the technical scope of the present invention are still within the technical scope of the present invention. [Simplified description of the drawings]: II: The cross section of the structure for generating a gas cavity is shown in Fig. 3. A schematic view of the upper surface of a substrate on which a conventional flip chip package structure is formed. Fig. 3 is a conventional flip chip package, a skin chip & FIG. 4A and FIG. 4B are diagrams showing a method for forming an underfill according to a first embodiment of the present invention, and a schematic diagram of a top surface of the substrate in the step of providing a substrate. 5A and 5B are views showing a schematic diagram of a top surface of a substrate in a "loading substrate" step in accordance with a first embodiment of the present invention. 6A and 6B are schematic views showing the upper surface of the substrate in the "applying underfill" step in the method of forming the underfill according to the first embodiment of the present invention. 7A and 7B are views showing a method of forming a bottom filler according to a first embodiment of the present invention, in which the underfill is non-uniformly filled on the upper surface of the substrate after the "applying underfill" step. Figs. 8A and 8B are schematic diagrams showing the upper surface of the substrate in the "first rotation" step in the method of forming the underfill according to the first embodiment of the present invention. 9A and 9B are schematic views showing the upper surface of the substrate in the step of "refilling the underfill" in accordance with the first embodiment of the present invention. Figs. 10A and 10B are views showing the upper surface of the substrate and the cross-sectional view of the substrate in the case where the underfill fills more than two-thirds of the bonding gap in accordance with the first embodiment of the present invention. 11A and 11B are diagrams showing the method of forming the underfill according to the first embodiment of the present invention. The method for forming the underfill in the "second rotation" step is shown in the upper surface of the substrate. 12A and 124B are diagrams showing a method for forming an underfill according to a second embodiment of the present invention. FIG. 13A and FIG. 13B are diagrams showing the upper surface of the substrate in the step of applying the underfill J. A method for forming an underfill according to a second embodiment of the present invention is a schematic view and a cross-sectional view of the upper surface of the substrate in which the underfill is non-uniformly filled after the "applying underfill" step. Figs. 14A and 14B are schematic diagrams showing the upper surface of the substrate in the "first rotation" step in the method of forming the underfill according to the second embodiment of the present invention. 15A and 15B are views showing a method for forming an underfill according to a second embodiment of the present invention, in which the underfill is filled with more than two-half of the bonding gap and a schematic view of the upper surface of the substrate. Figures 16 and 16B are schematic views showing the upper surface of the substrate in the "second rotation" step in accordance with the second embodiment of the present invention. [Main component symbol description] 10 spot coating tool no substrate ill upper surface 120 wafer 121 bump 122 side 123 solder 19 201131666 130 bonding gap 150 underfill 151 gas hole 210 substrate 211 upper surface 220 wafer 221 bump 222 side 223 Solder 230 Bonding gap 231 Vacant area 240 Stereo rotating stage 241 Rotating 柩 25C Underfill θ ! First tilt angle θ 2 Second tilt angle θ 3 Second tilt angle [s] 20