TW201130052A - Fabrication methods for trench MOSFET - Google Patents

Fabrication methods for trench MOSFET

Info

Publication number
TW201130052A
TW201130052A TW99105599A TW99105599A TW201130052A TW 201130052 A TW201130052 A TW 201130052A TW 99105599 A TW99105599 A TW 99105599A TW 99105599 A TW99105599 A TW 99105599A TW 201130052 A TW201130052 A TW 201130052A
Authority
TW
Taiwan
Prior art keywords
oxide layer
trench
substrate
sac
fabrication methods
Prior art date
Application number
TW99105599A
Other languages
Chinese (zh)
Other versions
TWI431695B (en
Inventor
Ya-Sheng Liu
Original Assignee
Vanguard Int Semiconduct Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Vanguard Int Semiconduct Corp filed Critical Vanguard Int Semiconduct Corp
Priority to TW99105599A priority Critical patent/TWI431695B/en
Publication of TW201130052A publication Critical patent/TW201130052A/en
Application granted granted Critical
Publication of TWI431695B publication Critical patent/TWI431695B/en

Links

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

Fabrication methods for trench metal-oxide-semiconductor field effect transistor (MOSFET) are presented. A substrate with a trench feature is provided. A sacrificial (SAC) oxide layer is formed conformally covering the trench feature and the surface of the substrate. An oxide layer is vertically formed, thereby thickening the SAC oxide layer at the surface of the substrate and the bottom of the trench feature. The oxide layer and part of the SAC oxide layer are then removed remaining a portion of the oxide layer. An additional oxide layer is formed conformally covering the substrate structure. A conductive layer is deposited on the substrate structure and filled into the trench feature to serve as gate electrode of the trench MOSFET.
TW99105599A 2010-02-26 2010-02-26 Fabrication methods for trench mosfet TWI431695B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW99105599A TWI431695B (en) 2010-02-26 2010-02-26 Fabrication methods for trench mosfet

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW99105599A TWI431695B (en) 2010-02-26 2010-02-26 Fabrication methods for trench mosfet

Publications (2)

Publication Number Publication Date
TW201130052A true TW201130052A (en) 2011-09-01
TWI431695B TWI431695B (en) 2014-03-21

Family

ID=50180095

Family Applications (1)

Application Number Title Priority Date Filing Date
TW99105599A TWI431695B (en) 2010-02-26 2010-02-26 Fabrication methods for trench mosfet

Country Status (1)

Country Link
TW (1) TWI431695B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI497713B (en) * 2011-09-14 2015-08-21 Inotera Memories Inc Fabricating method of an insulator
CN111370473A (en) * 2020-03-24 2020-07-03 成都森未科技有限公司 Groove type device and preparation method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI497713B (en) * 2011-09-14 2015-08-21 Inotera Memories Inc Fabricating method of an insulator
CN111370473A (en) * 2020-03-24 2020-07-03 成都森未科技有限公司 Groove type device and preparation method thereof

Also Published As

Publication number Publication date
TWI431695B (en) 2014-03-21

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