TW201130052A - Fabrication methods for trench MOSFET - Google Patents
Fabrication methods for trench MOSFETInfo
- Publication number
- TW201130052A TW201130052A TW99105599A TW99105599A TW201130052A TW 201130052 A TW201130052 A TW 201130052A TW 99105599 A TW99105599 A TW 99105599A TW 99105599 A TW99105599 A TW 99105599A TW 201130052 A TW201130052 A TW 201130052A
- Authority
- TW
- Taiwan
- Prior art keywords
- oxide layer
- trench
- substrate
- sac
- fabrication methods
- Prior art date
Links
Landscapes
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Fabrication methods for trench metal-oxide-semiconductor field effect transistor (MOSFET) are presented. A substrate with a trench feature is provided. A sacrificial (SAC) oxide layer is formed conformally covering the trench feature and the surface of the substrate. An oxide layer is vertically formed, thereby thickening the SAC oxide layer at the surface of the substrate and the bottom of the trench feature. The oxide layer and part of the SAC oxide layer are then removed remaining a portion of the oxide layer. An additional oxide layer is formed conformally covering the substrate structure. A conductive layer is deposited on the substrate structure and filled into the trench feature to serve as gate electrode of the trench MOSFET.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW99105599A TWI431695B (en) | 2010-02-26 | 2010-02-26 | Fabrication methods for trench mosfet |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW99105599A TWI431695B (en) | 2010-02-26 | 2010-02-26 | Fabrication methods for trench mosfet |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201130052A true TW201130052A (en) | 2011-09-01 |
TWI431695B TWI431695B (en) | 2014-03-21 |
Family
ID=50180095
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW99105599A TWI431695B (en) | 2010-02-26 | 2010-02-26 | Fabrication methods for trench mosfet |
Country Status (1)
Country | Link |
---|---|
TW (1) | TWI431695B (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI497713B (en) * | 2011-09-14 | 2015-08-21 | Inotera Memories Inc | Fabricating method of an insulator |
CN111370473A (en) * | 2020-03-24 | 2020-07-03 | 成都森未科技有限公司 | Groove type device and preparation method thereof |
-
2010
- 2010-02-26 TW TW99105599A patent/TWI431695B/en active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI497713B (en) * | 2011-09-14 | 2015-08-21 | Inotera Memories Inc | Fabricating method of an insulator |
CN111370473A (en) * | 2020-03-24 | 2020-07-03 | 成都森未科技有限公司 | Groove type device and preparation method thereof |
Also Published As
Publication number | Publication date |
---|---|
TWI431695B (en) | 2014-03-21 |
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