TW201129983A - Semiconductor test apparatus - Google Patents

Semiconductor test apparatus

Info

Publication number
TW201129983A
TW201129983A TW100100455A TW100100455A TW201129983A TW 201129983 A TW201129983 A TW 201129983A TW 100100455 A TW100100455 A TW 100100455A TW 100100455 A TW100100455 A TW 100100455A TW 201129983 A TW201129983 A TW 201129983A
Authority
TW
Taiwan
Prior art keywords
addresses
test apparatus
failure data
burst
semiconductor test
Prior art date
Application number
TW100100455A
Other languages
Chinese (zh)
Other versions
TWI473106B (en
Inventor
Takahiro Kimura
Original Assignee
Yokogawa Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yokogawa Electric Corp filed Critical Yokogawa Electric Corp
Publication of TW201129983A publication Critical patent/TW201129983A/en
Application granted granted Critical
Publication of TWI473106B publication Critical patent/TWI473106B/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
    • G11C29/24—Accessing extra cells, e.g. dummy cells or redundant cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/44—Indication or identification of errors, e.g. for repair
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/56—External testing equipment for static stores, e.g. automatic test equipment [ATE]; Interfaces therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/56—External testing equipment for static stores, e.g. automatic test equipment [ATE]; Interfaces therefor
    • G11C29/56008—Error analysis, representation of errors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/56—External testing equipment for static stores, e.g. automatic test equipment [ATE]; Interfaces therefor
    • G11C2029/5606—Error catch memory

Landscapes

  • Tests Of Electronic Circuits (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)

Abstract

A semiconductor test apparatus sorts addresses corresponding to memory cells in memory provided in a device under test, as well as failure data obtained as a result of testing the memory cells, and stores the sorted addresses and failure data in acquisition memory using burst access. The semiconductor test apparatus is provided with: an address generator configured to generate a burst target signal, which indicates that the addresses and failure data are target data for burst access; and a sort circuit configured to sort the addresses and failure data in order of continuous addresses suitable for burst access, on the basis of the burst target signal.
TW100100455A 2010-01-07 2011-01-06 Semiconductor test device TWI473106B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010001915A JP4947395B2 (en) 2010-01-07 2010-01-07 Semiconductor test equipment

Publications (2)

Publication Number Publication Date
TW201129983A true TW201129983A (en) 2011-09-01
TWI473106B TWI473106B (en) 2015-02-11

Family

ID=44225417

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100100455A TWI473106B (en) 2010-01-07 2011-01-06 Semiconductor test device

Country Status (4)

Country Link
US (1) US8312334B2 (en)
JP (1) JP4947395B2 (en)
KR (1) KR101753353B1 (en)
TW (1) TWI473106B (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011054244A (en) * 2009-09-02 2011-03-17 Toshiba Corp Method and apparatus for testing semiconductor
KR20130019088A (en) 2011-08-16 2013-02-26 엘지이노텍 주식회사 Rotor core of motor
JP5255710B1 (en) * 2012-01-26 2013-08-07 株式会社アドバンテスト Defect information storage device and test system
US9099173B2 (en) * 2012-12-14 2015-08-04 Virtium Technology, Inc. Classifying flash devices using ECC
JP6461831B2 (en) * 2016-01-04 2019-01-30 東芝メモリ株式会社 Memory inspection device
KR102670596B1 (en) * 2022-07-04 2024-05-31 주식회사 와이씨 Method for configuring address of buffer memory for semiconductor test, and semiconductor test apparatus implementing the same method

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3099931B2 (en) * 1993-09-29 2000-10-16 株式会社東芝 Semiconductor device
JP2742220B2 (en) * 1994-09-09 1998-04-22 松下電器産業株式会社 Semiconductor storage device
KR0171942B1 (en) * 1995-06-30 1999-03-30 김주용 Burst length detection circuit
US6182253B1 (en) * 1997-07-16 2001-01-30 Tanisys Technology, Inc. Method and system for automatic synchronous memory identification
JPH1145568A (en) * 1997-07-24 1999-02-16 Oki Electric Ind Co Ltd Semiconductor storage device
JP3188662B2 (en) * 1997-11-07 2001-07-16 松下電器産業株式会社 Semiconductor storage device
JPH11328995A (en) * 1998-05-19 1999-11-30 Advantest Corp Memory testing device
US6295231B1 (en) * 1998-07-17 2001-09-25 Kabushiki Kaisha Toshiba High-speed cycle clock-synchronous memory device
JP4102493B2 (en) * 1998-10-21 2008-06-18 株式会社アドバンテスト Semiconductor test equipment
JP3259696B2 (en) * 1998-10-27 2002-02-25 日本電気株式会社 Synchronous semiconductor memory device
JP4204685B2 (en) * 1999-01-19 2009-01-07 株式会社ルネサステクノロジ Synchronous semiconductor memory device
JP2001035153A (en) * 1999-07-23 2001-02-09 Fujitsu Ltd Semiconductor memory
JP4515566B2 (en) * 1999-11-09 2010-08-04 富士通セミコンダクター株式会社 Semiconductor integrated circuit
JP2002175689A (en) * 2000-09-29 2002-06-21 Mitsubishi Electric Corp Semiconductor integrated circuit device
JP4993175B2 (en) * 2005-12-06 2012-08-08 横河電機株式会社 Memory inspection device
JP5017962B2 (en) * 2006-08-22 2012-09-05 横河電機株式会社 Semiconductor test equipment
JP2008243323A (en) * 2007-03-28 2008-10-09 Yokogawa Electric Corp Semiconductor test device

Also Published As

Publication number Publication date
KR101753353B1 (en) 2017-07-19
JP4947395B2 (en) 2012-06-06
US20110167306A1 (en) 2011-07-07
TWI473106B (en) 2015-02-11
US8312334B2 (en) 2012-11-13
JP2011141927A (en) 2011-07-21
KR20110081035A (en) 2011-07-13

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