TW201129862A - Positive radiation sensitive resin composition, interlayer insulation film and method for forming the same - Google Patents

Positive radiation sensitive resin composition, interlayer insulation film and method for forming the same

Info

Publication number
TW201129862A
TW201129862A TW099142026A TW99142026A TW201129862A TW 201129862 A TW201129862 A TW 201129862A TW 099142026 A TW099142026 A TW 099142026A TW 99142026 A TW99142026 A TW 99142026A TW 201129862 A TW201129862 A TW 201129862A
Authority
TW
Taiwan
Prior art keywords
insulation film
resin composition
interlayer insulation
sensitive resin
radiation sensitive
Prior art date
Application number
TW099142026A
Other languages
Chinese (zh)
Other versions
TWI481956B (en
Inventor
Yuuki Oonuma
Masashi Arai
Hitomi Matsuoka
Masaaki Hanamura
Original Assignee
Jsr Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jsr Corp filed Critical Jsr Corp
Publication of TW201129862A publication Critical patent/TW201129862A/en
Application granted granted Critical
Publication of TWI481956B publication Critical patent/TWI481956B/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/033—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Compositions Of Macromolecular Compounds (AREA)

Abstract

Provided are a positive radiation sensitive resin composition, an interlayer insulation film obtained from the composition and a method for forming the interlayer insulation film, in which the positive radiation sensitive resin composition is capable of forming an interlayer insulation film having excellent coating property, radiation sensitivity and capable of obtaining good pattern shape, while having excellent heat resistance, solvent resistance, light transmittance and dry etching resistance. The said radiation sensitive resin composition can be achieved by a radiation sensitive resin composition comprising [A] alkali soluble resin, [B] 1,2-quinone diazido compound and [C] compound represented by formula (1), an interlayer insulation film obtained from the composition and a method for forming the same.
TW099142026A 2009-12-04 2010-12-03 Positive radiation sensitive resin composition, interlayer insulation film and method for forming the same TWI481956B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009276097 2009-12-04

Publications (2)

Publication Number Publication Date
TW201129862A true TW201129862A (en) 2011-09-01
TWI481956B TWI481956B (en) 2015-04-21

Family

ID=44099327

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099142026A TWI481956B (en) 2009-12-04 2010-12-03 Positive radiation sensitive resin composition, interlayer insulation film and method for forming the same

Country Status (4)

Country Link
JP (1) JP2011138116A (en)
KR (1) KR20110063351A (en)
CN (1) CN102087473B (en)
TW (1) TWI481956B (en)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5966268B2 (en) * 2011-07-22 2016-08-10 Jsr株式会社 Array substrate, liquid crystal display element, and method of manufacturing array substrate
JP5734152B2 (en) * 2011-09-30 2015-06-10 富士フイルム株式会社 Photosensitive resin composition, cured film and method for producing the same
JP5966328B2 (en) * 2011-11-16 2016-08-10 Jsr株式会社 Array substrate, liquid crystal display element, and method of manufacturing array substrate
TWI477914B (en) * 2012-03-29 2015-03-21 Chi Mei Corp Photo-curing polysiloxane composition and protecting film and element containing said protecting film
JP2014009334A (en) * 2012-07-02 2014-01-20 Dai Ichi Kogyo Seiyaku Co Ltd Cross-linked polymer via photo-induced cationic polymerization
KR101935033B1 (en) * 2012-10-23 2019-04-05 닛산 가가쿠 가부시키가이샤 Non-photosensitive resin composition
JP6116954B2 (en) * 2013-03-22 2017-04-19 旭化成株式会社 Photosensitive resin composition and method for producing cured relief pattern
WO2014208647A1 (en) * 2013-06-27 2014-12-31 富士フイルム株式会社 Photosensitive resin composition, cured-film manufacturing method, cured film, liquid-crystal display, and organic el display
JP2015072336A (en) * 2013-10-02 2015-04-16 Jnc株式会社 Photosensitive composition and display element using the same
KR102215956B1 (en) * 2013-12-20 2021-02-15 제이에스알 가부시끼가이샤 Method for forming hole pattern, resin composition for forming hole pattern, and layered product
JP6387759B2 (en) * 2014-09-12 2018-09-12 日油株式会社 Copolymer composition and method for stabilizing copolymer
JP6700020B2 (en) * 2015-10-21 2020-05-27 昭和電工株式会社 Positive photosensitive resin composition
CN110446974B (en) * 2017-03-29 2023-09-12 东丽株式会社 Photosensitive composition, cured film, and organic EL display device
TW202309655A (en) * 2021-07-28 2023-03-01 日商日產化學股份有限公司 Positive Photosensitive Resin Composition

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06258824A (en) * 1993-03-02 1994-09-16 Sumitomo Chem Co Ltd Positive type resist composition
JPH08286365A (en) * 1995-04-18 1996-11-01 Mitsubishi Chem Corp Radiation sensitive coating composition
DE60336216D1 (en) * 2002-04-18 2011-04-14 Nissan Chemical Ind Ltd POSITIVE LIGHT-SENSITIVE RESIN COMPOSITION AND METHOD FOR STRUCTURAL EDUCATION
KR101026954B1 (en) * 2003-07-16 2011-04-11 에이제토 엘렉토로닉 마티리알즈 가부시키가이샤 Photosensitive resin composition
ATE414118T1 (en) * 2004-07-07 2008-11-15 Promerus Llc PHOTOSENSITIVE DIELECTRIC RESIN COMPOSITIONS AND USES THEREOF
JP4753237B2 (en) * 2005-07-25 2011-08-24 Ａｚエレクトロニックマテリアルズ株式会社 Photosensitive resin composition
US7687208B2 (en) * 2006-08-15 2010-03-30 Asahi Kasei Emd Corporation Positive photosensitive resin composition
JP4849251B2 (en) * 2007-01-18 2012-01-11 Ｊｓｒ株式会社 Radiation-sensitive resin composition, interlayer insulating film and microlens, and production method thereof
JP5029836B2 (en) * 2008-03-19 2012-09-19 Ｊｓｒ株式会社 Radiation-sensitive resin composition, interlayer insulating film and microlens, and production method thereof

Also Published As

Publication number Publication date
JP2011138116A (en) 2011-07-14
KR20110063351A (en) 2011-06-10
CN102087473A (en) 2011-06-08
TWI481956B (en) 2015-04-21
CN102087473B (en) 2014-04-16

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