201127732 六、發明說明 【發明所屬之技術領域】 本發明係關於將晶圓加工用膠帶捲繞成捲筒狀的捲 芯，特別是關於將具有切割及晶粒接合用薄膜的晶圓加工 用膠帶捲繞成捲筒狀的捲芯，該切割及晶粒接合用薄膜兼 具切割膠帶（dicing tape)和晶粒接合薄膜（die bonding film) 兩種功能。 〇 【先前技術】 近年來，開發出一種兼具切割膠帶和晶粒接合薄膜兩 種功能之切割及晶粒接合用薄膜；該切割膠帶，是在將半 導體晶圓切斷分離（切割）成各個晶片時用於固定半導體晶 圓；該晶粒接合薄膜（也稱晶粒貼裝薄膜），是用於將切割 後的半導體晶片接著於引線架、封裝基板等，或是用於在 堆疊封裝中將半導體晶片彼此積層、接著。 Q 作爲這樣的切割及晶粒接合用薄膜，考慮到對晶圓進 行貼附、切割時對環形框架進行安裝等的作業性，會有實 施預切割加工的情況。 實施預切割加工的切割及晶粒接合用薄膜的例子如第 4圖及第5圖所示。第4圖、第5(A)圖及第5(B)圖分別爲 具備切割及晶粒接合用薄膜4 0的晶圓加工用膠帶3 0的槪 要圖、俯視圖、剖面圖。晶圓加工用膠帶3 0係包含：脫 模薄膜3 1、接著劑層3 2、黏著薄膜3 3。接著劑層3 2加 工成對應晶圓形狀的圓形，具有圓形標記形狀。黏著薄膜 -5- 201127732 3 3，是將與切割用環形框架的形狀對應之圓形部分的周邊 區域予以除去’如圖所示係具有圓形標記部3 3 a和包圍其 外側的周邊部3 3 b。接著劑層3 2和黏著薄膜3 3的圓形標 記部33a，是以中心一致的方式積層，另外’黏著薄膜33 的圓形標記部33a覆蓋接著劑層32’且在其周圍與脫模 薄膜31接觸。而且’藉由接著劑層32和黏著薄膜33的 圓形標記部3 3 a所構成的積層構造’來構成切割及晶粒接 合用薄膜40。 在將晶圓切割時’是從積層狀態的接著劑層3 2及黏 著薄膜3 3將脫模薄膜3 1剝離’如第6圖所示’在接著劑 層3 2上貼附半導體晶圓W的背面’在黏著薄膜3 3的圓 形標記部3 3 a的外周部黏著固定切割用環形框架R。在此 狀態下，將半導體晶圓W切割後，對黏著薄膜3 3實施紫 外線照射等的硬化處理’然後拾取半導體晶片。此時’黏 著薄膜33經過硬化處理而使黏著力降低’容易從接著劑 層32剝離，半導體晶片在背面附著接著劑層32的狀態下 進行拾取。在半導體晶片的背面上附著的接著劑層3 2 ’ 其後在將半導體晶片接著於引線架、封裝基板或其他的半 導體晶片時’具有作爲晶粒接合薄膜的功能。 如第4圖及第5圖所示，上述的晶圓加工用膠帶 3 〇，接著劑層3 2與黏著薄膜3 3的圓形標記部3 3 a積層的 部分比其他部分更厚。因此’使用第7圖所示的習知捲芯 5 0，亦即使用在旋轉中心形成圓筒狀空洞部5 3的捲芯 5 0 ,如第8圖所示將晶圓加工用膠帶3 0作爲製品而捲繞 -6- 201127732 成捲筒狀時，在接著劑層3 2和黏著薄膜3 3的圓形標記部 33a的積層部分，經由除去黏著薄膜33所形成的黏著薄 膜3 3與脫模薄膜的段差重疊在一起，而產生段差被轉印 在柔軟的接著劑層32表面的現象，亦即產生第9圖所示 的轉印痕（也稱爲標記痕、褶皺、或捲痕等）。這樣的轉印 痕的產生，在接著劑層3 2是柔軟的樹脂所形成的情況、 或較厚的情況，以及膠帶3 0的捲繞數較多的情況等，特 ^ 別顯著。而且，若產生轉印痕，在接著劑層和半導體晶圓 0 之間會捲入空氣而無法密合，結果可能會引起接著不良而 在晶圓的加工時發生異常。 爲了抑制上述轉印痕的產生，將薄膜的捲取壓減少是 可考慮的，依據該方法，可能會產生製品的捲繞偏移，例 如要安裝在膠帶黏貼機變困難等，在該薄膜的實際使用時 造成阻礙。 另外，爲了抑制上述標記痕的產生，在專利文獻1揭 & 示一種接著薄片，是在剝離基材上的接著劑層及黏著薄膜 的外方設置支承層（具有與接著劑層及黏著薄膜的合計膜 厚相同或更厚的膜厚）。專利文獻1的接著薄片，藉由具 備支承層可將施加於接著薄片的捲取壓力分散或集中於支 承層，而抑制轉印痕的產生。 專利文獻1 :日本特開2007-2 1 73號公報 【發明內容】 然而，在上述專利文獻1的接著薄片，由於在剝離基 201127732 板上之製造半導體裝置時必須的接著劑層及黏著薄膜以外 的部分形成支承層，支承層的寬度受到限制’相對於接著 劑層及黏著薄膜的外徑，支承層的寬度狹窄’會有對標記 痕的抑制效果不足的問題產生。另外，由於支承層通常不 具有黏著性，無法與剝離基材（PET薄膜）充分貼附，在支 承層的最狹窄的部分容易從剝離基材浮起，要在晶圓上貼 合切割及晶粒接合用薄膜時，上述浮起部分鉤到裝置而產 生晶圓損傷的問題。 另外，將支承層的寬度加大也是可考慮的，但由於晶 圓加工用膠帶整體的寬度變寬，而要使用現有的設備變得 困難。另外，由於支承層爲最終被廢棄的部分，加大支承 層的寬度會造成材料成本的上升。 於是，本發明的目的是爲了提供一種將具有切割及晶 粒接合薄膜之晶圓加工用膠帶捲繞成捲筒狀的捲芯，在將 於脫模薄膜上具有切割及晶粒接合用薄膜（具有接著劑層 及黏著薄膜）之晶圓加工用膠帶捲取成捲筒狀的情況’可 充分抑制接著劑層上的轉印痕產生。 爲了達成上述的目的，本發明之將晶圓加工用膠帶捲 繞成捲筒狀的捲芯，該晶圓加工用膠帶係包含：脫模薄 膜；設置於前述脫模薄膜的表面上且具有既定的平面形狀 之接著劑層；以及具有標記部和周邊部的黏著薄膜，該標 記部具有既定的平面形狀，設置成可覆蓋前述接著劑層且 在前述接著劑層的周圍與前述脫模薄膜接觸，該周邊部設 置成包圍前述標記部的外側；該捲芯具有：至少形成在對 -8 - 201127732 應於前述接著劑層的位置而用來緩和捲繞壓力之緩和部、 以及在被捲繞的晶圓加工用膠帶的寬度方向上形成於前述 緩和部的外側而用來支承晶圓加工用膠帶之支承部。 依據上述發明之將晶圓加工用膠帶捲繞成捲筒狀的捲 芯，在對應於作爲切割及晶粒接合用薄膜（具有：既定平 面形狀的接著劑層、既定的平面形狀而設置成可覆蓋接著 劑層且在接著劑層的周圍與脫模薄膜接觸之標記部）來利 0 用的部分之位置，並未形成捲芯的支承部，因此捲繞壓力 減輕（緩和），可充分抑制接著劑層上之轉印痕產生。 另外，本發明之將晶圓加工用膠帶捲繞成捲筒狀的捲 芯較佳爲，緩和部及支承部具有圓筒形狀，且緩和部是藉 由將支承部的直徑加大而形成。 依據上述發明的將晶圓加工用膠帶捲繞成捲筒狀的捲 芯，相對於在被捲繞的晶圓加工用膠帶的寬度方向上形成 於緩和部的外側之直徑大的支承部，可以形成直徑小的緩 Q 和部，不是將緩和部和支承部作爲各自獨立的構件來設 置，而能利用捲芯的形狀形成可緩和捲繞壓力的緩和部。 另外較佳爲，緩和部的形狀，除了使緩和部和支承部 形成階梯狀的情況，緩和部與支承部可藉由曲面連接。 再者，作爲本發明的將晶圓加工用膠帶捲繞成捲筒狀 的捲芯較佳爲，用於安裝於捲取輥或送出輥的圓筒狀空洞 部是形成於旋轉中心。 依據上述發明的將晶圓加工用膠帶捲繞成捲筒狀的捲 芯，可不影響緩和部及支承部的形狀而形成空洞部。 -9 - 201127732 另外，本發明的捲繞於捲芯的晶圓加工用膠帶，是捲 繞於上述的捲芯。 依據本發明的將晶圓加工用膠帶捲繞成捲筒狀的捲 芯，在將於脫模薄膜上具有切割及晶粒接合用薄膜（具有 接著劑層及黏著薄膜）之晶圓加工用膠帶捲取爲捲筒狀的 情況，可充分抑制接著劑層上的轉印痕產生。另外，依據 本發明的捲繞於捲芯之晶圓加工用膠帶，可充分抑制接著 劑層上的轉印痕產生，不致在接著劑層和半導體晶圓之間 捲入空氣，在將半導體晶片接著於引線架、封裝基板或其 他的半導體晶片時，不會引起接著不良而產生晶圓加工時 的異常。 【實施方式】 以下，參照附圖來詳細說明本發明的實施形態。第1 圖是說明將本實施形態的晶圓加工用膠帶捲繞成捲筒狀的 捲芯，第1 (A)圖是本實施形態的捲芯的剖面圖’第1 ( B ) 圖是槪要圖。第2圖是說明使用本實施形態的捲芯捲繞晶 圓加工用膠帶的狀態。第3圖是其他實施形態的捲芯的剖 面圖。首先，對本實施形態的捲繞於捲芯之晶圓加工用膠 帶進行說明。另外’本實施形態的捲繞於捲芯之晶圓加工 用膠帶，是第4圖及第5圖所示的長帶狀的晶圓加工用膠 帶30。 晶圓加工用膠帶 -10- 201127732 以下，對本實施形態的捲繞於捲芯之晶圓加工用膠帶 的各構成要素進行詳細說明。 (脫模薄膜） 作爲用於晶圓加工用膠帶的脫模薄膜，可使用周知的 聚對苯二甲酸乙二醇酯（PET)系、聚乙烯系以及其他實施 脫模處理後的薄膜。脫模薄膜的厚度沒有特別限定，可以 ^^適當設定，宜爲25~50μηι。 〇 (接著劑層） 接著劑層，在貼合半導體晶圓等並進行切割後，在拾 取晶片時從黏著薄膜剝離而附著於晶片，作爲將晶片固定 於基板、引線架時的接著劑。因此，接著劑層，在拾取晶 片時’具有以附著於單片化的半導體的狀態可以從黏著薄 膜剝離的剝離性，且在進行晶粒接合時，具有爲了將晶片 Q 接著固定於基板、引線架之充分的接著可靠性。 接著劑層，是將接著劑事先薄膜化而構成，例如可使 用：接著劑用的公知的聚醯亞胺樹脂、聚醯胺樹脂、聚醚 醯亞胺樹脂、聚醯胺醯亞胺樹脂、聚酯樹脂、聚酯樹脂、 聚酯醯亞胺樹脂、苯氧基樹脂、聚楓樹脂、聚醚颯樹脂、 聚苯硫醚樹脂、聚醚酮樹脂、氯化聚丙烯樹脂、丙烯酸樹 脂、聚氨酯樹脂 '環氧樹脂、聚丙烯醯胺樹脂、三聚氰胺 樹脂等及其混合物。另外，爲了強化對晶片、引線架的接 者力’ $父佳爲將砂院偶合劑或鈦偶合劑作爲添加劑添加到 -11 - 201127732 前述材料或其混合物中。 接著劑層的厚度沒有特別限定’通常宜爲5〜1 0 0 μ m 左右。另外，接著劑層可積層在黏著薄膜的全面，也可以 積層事先切斷（預切割）成對應於待貼合的晶圓形狀之接著 薄膜。在積層對應於晶圓之接著薄膜的情況，如第6圖所 示，在貼合晶圓W的部分存在接著劑層3 2，在貼合切割 用的環形框架R的部分沒有接著劑層32，僅存在黏著薄 膜的圓形標記部3 3 a。一般而言，由於接著劑層不容易從 被接著體剝離，藉由使用預切割的接著劑層，環形框架R 可貼合於黏著薄膜，而獲得在使用後將薄膜剝離時不容易 在環形框架上產生殘膠的效果。 (黏著薄膜） 黏著薄膜具有：在切割晶圓時晶圓不致剝離之充分的 黏著力，且在切割後拾取晶片時能夠容易從接著劑層剝離 之低黏著力。例如可使用在基材薄膜上設置黏著劑層而構 成的。 作爲黏著薄膜的基材薄膜，只要是以往公知的基材薄 膜即可使用，沒有特別的限制，但作爲後述的接著劑層是 使用放射線硬化性材料的情況，較佳爲使用具有放射線透 過性的材料。 例如’作爲其材料，可以列舉聚乙烯、聚丙烯、乙 烯-丙烯共聚物、聚丁烯-1、聚-4_甲基戊烯-1、乙烯-醋酸 乙烯酯共聚物、乙烯-丙烯酸乙酯共聚物、乙烯-丙烯酸甲 -12 - 201127732 醋共聚物、乙烯-丙烯酸共聚物、離夺聚合物等的α_烯烴 的均聚物或共聚物或其等的混合物；聚氨酯、苯乙烯-乙 稀-丁嫌或戊烯系共聚物、聚醯胺-多元醇共聚物等熱塑性 彈性體及其等的混合物。另外，基材薄膜，可將選自上述 群中的2種以上的材料混合而構成，亦可將其等單層化或 多層化而構成。基材薄膜的厚度沒有特別限定，可以適當 设定，較佳爲50~20〇μηι。 0 作爲黏著薄膜的黏著劑層中使用的樹脂，沒有特別限 定’可以使用黏著劑用的公知的氯化聚丙烯樹脂、丙烯酸 樹脂、聚酯樹脂、聚氨酯樹脂、環氧樹脂等。 在黏著劑層的樹脂，較佳爲適當配合丙烯酸系黏著 劑、放射線聚合性化合物、光聚合起始劑、硬化劑等來調 製黏著劑。黏著劑層的厚度沒有特別限定可以適當設定， 較佳爲5~30μιη。 將放射線聚合性化合物配合於黏著劑層的情況，藉由 Q 進行放射線硬化容易從接著劑層剝離。該放射線聚合性化 合物例如是使用：經由光照射可形成三維網狀化之分子內 至少具有兩個以上光聚合性碳-碳雙鍵的低分子量化合 物。 具體而言，可以使用三羥甲基丙烷三丙烯酸酯、季戊 四醇三丙烯酸酯、季戊四醇四丙烯酸酯、二季戊四醇單羥 基五丙烯酸酯、二季戊四醇六丙烯酸酯、I，4·丁二醇二丙 烯酸酯、1，6 -己二醇二丙烯酸酯、聚乙二醇二丙烯酸酯及 寡聚酯丙烯酸酯等。 -13- 201127732 另外，除上述的丙烯酸酯系化合物外，也可以使用聚 氨酯丙烯酸酯系寡聚物。聚氨酯丙烯酸酯系寡聚物，是使 具有羥基的丙烯酸酯或甲基丙烯酸酯（例如丙烯酸2-羥乙 酯、甲基丙烯酸2_羥乙酯、丙烯酸2-羥丙酯、甲基丙烯 酸2-羥丙酯、聚乙二醇丙烯酸酯、聚乙二醇甲基丙烯酸 酯等）與末端異氰酸酯聚氨酯預聚物反應而得到的；該末 端異氰酸酯聚氨酯預聚物，是聚酯型或聚醚型等的多元醇 化合物和多元異氰酸酯化合物（例如 2,4-甲苯二異氰酸 酯、2,6 -甲苯二異氰酸酯、1,3-苯二甲基二異氰酸酯、 1，4-苯二甲基二異氰酸酯、二苯甲烷-4，4-二異氰酸酯等） 反應而得到的。此外’黏著劑層是將選自上述樹脂的2種 以上予以混合而構成亦可。 使用光聚合起始劑的情況，例如可使用：安息香異丙 醚、安息香異丁醚、二苯甲酮、米希勒酮、氯噻吨酮、十 二院基噻吨酮、二甲基噻吨酮、二乙基噻吨酮、节基二甲 基縮酮、α-羥基環己基苯基甲酮、2-經甲基苯基丙烷等。 這些光聚合起始劑的配合量，相對於丙烯酸系共聚物1 〇 〇 質量份宜爲0.01〜5質量份。 <第1實施形態> 如第1圖所示，本實施形態的捲芯〗〇，是在晶圓加 工用膠帶的捲繞面側形成直徑小的緩和部1 1和直徑大的 支承部1 2之啞鈴型捲芯。緩和部π設置在對應於晶圓加 工用膠帶之切割及晶粒接合用薄膜（由接著劑層和覆蓋接 -14- 201127732 著劑層的黏著薄膜之標記部構成）的接著劑層的位置，支 承部12’是在緩和部n的外側，設置成支承黏著薄膜的 周邊部33b。另外，在捲芯的旋轉中心形成圓筒狀的空洞 部1 3。 捲芯的材料沒有特別限定，從操作容易度及重量等的 觀點’可選擇ABS樹脂、聚氯乙烯樹脂、鐵等。 ^ (緩和部1 1 ) Ό 如第1圖所示，緩和部1 1是由直徑（以捲芯1 〇的旋 轉中心軸爲圓心）比支承部1 2小的圓筒面形成。而且，在 緩和部1 1的兩端形成有與緩和部1 1垂直的緩和部側部 1 4。因此，緩和部1 1和比緩和部1 1直徑大的支承部j 2 是形成階梯狀。緩和部1 1的深度（d2)，未達1 mm時無法 獲得抑制轉印痕的效果，超過40mm時晶圓加工用膠帶 30的捲取變困難，因此，宜爲lmm〜40mm。 〇 (支承部1 2 ) 支承部12，是相對於捲芯10的旋轉中心軸方向形成 在捲芯的外側方向兩方，以比緩和部1 1直徑大的圓筒面 作爲外面。因此’不須與包含支承部1 2的其他構件作爲 各自獨立的構件來設置，用來緩和捲繞壓力的緩和部π 可僅根據捲芯10的形狀來形成。支承部12的寬度（d,)， 未達1 mm時晶圓加工用膠帶3 0的捲取變得困難，因此宜 爲1 mm以上。另外，緩和部1 1是對應於接著劑層3 2而 15- 201127732 設置，若考慮半導體加工用膠帶30的寬度（第5圖中的 d 5 )，基於不讓捲芯1 〇整體的大小大到必要以上的觀點’ 沒有必要超過3 5 m m。 (空洞部1 3 ) 空洞部1 3爲圓筒狀的空洞部’其中心軸與捲芯1 〇的 旋轉中心軸相同。而且’是用來安裝於捲取輥或送出輥。 從捲芯1 0的旋轉中心軸起算’到空洞部1 3的曲面的距離 形成爲比到緩和部1 1的距離小。因此’空洞部1 3不會影 響緩和部1 1及支承部1 2的形狀。 第2圖表示使用本實施形態的捲芯1 〇來捲繞晶圓加 工用膠帶3 0的狀態。藉由形成在捲芯1 〇外側的兩個支承 部1 2來支承晶圓加工用膠帶’可對晶圓加工用膠帶施加 期望的捲取壓，另一方面’藉由對應於接著劑位置的緩和 部11，不致將捲芯按壓於晶圓加工用膠帶（接著劑層），因 此可減輕（緩和）捲繞壓力。結果可抑制接著劑層上的轉印 痕產生。 <第2實施形態> 第2實施形態的捲芯2 0，是使第1實施形態的捲芯 1 〇的緩和部側部1 4形成曲面的捲芯。第3圖表示第2實 施形態的捲芯2〇的剖面圖。捲芯20，是在晶圓加工用膠 帶的捲繞面側形成直徑小的緩和部2 1和直徑大的支承部 22的變形啞鈴型的捲芯。如第3圖所示，緩和部2 1是包 -16- 201127732 含：直徑（以捲芯20的旋轉中心軸爲圓心）比支承部22小 的圓筒面之緩和部2 1、以及從緩和部2 1連續彎曲的曲面 之緩和部側部2 4。 另外’緩和部21設置在對應於晶圓加工用膠帶的切 割及晶粒接合用薄膜的接著劑層的位置，支承部2 2在緩 和部2 1的外側形成可支承黏著薄膜的周邊部3 3 b。另 外，在捲芯的旋轉中心形成有圓筒狀的空洞部2 3。 〇 《實施例》 接著’對本發明的實施例進行說明，本發明不限定於 這些實施例。捲繞於捲芯的晶圓加工用膠帶是如下述般製 作出。首先，調製支承基材（基材薄膜）及黏著劑組成物 1 ’在支承基材上以黏著劑組成物1乾燥後的厚度成爲 2 〇 μ m的方式塗布前述黏著劑組成物，在]i 〇艺下乾燥3分 鐘製作成黏著薄膜。接著，調製接著劑組成物1，在實施 Q 脫模處理的聚對苯二甲酸乙二醇酯薄膜構成的剝離襯墊 上’以乾燥後的厚度成爲20μιη的方式塗布前述接著劑組 成物’在110 °C下乾燥3分鐘而在剝離襯墊上製作接著薄 膜。然後，將上述黏著薄膜及上述接著薄膜裁斷爲第4圖 所示的形狀後，在上述黏著薄膜的接著劑層側貼合上述接 著薄膜，製作成晶圓加工用膠帶1。以下說明支承基材、 黏著劑組成物1及接著劑組成物1的調製方法。 (支承基材的調製） -17- 201127732 將由市售的低密度聚乙烯構成的樹脂珠（日本聚乙嫌 (股）製NOVATEC-LL)在140°C下熔融，使用擠壓機將其成 形爲厚度ΙΟΟμηι的長帶薄膜形狀。 (黏著劑組成物的調製） 首先，作爲具有放射線硬化性碳-碳雙鍵及官能基的 化合物（〇)，製作由丙烯酸2 -乙基己酯、丙烯酸-2-羥基乙 酯及甲基丙烯酸甲酯構成，具有質量平均分子量7〇萬、 玻璃轉化溫度-6 4 °C、放射線硬化性碳-碳雙鍵量〇 . 9 m e q / g 的共聚物化合物。相對於1 〇〇質量份的該化合物（〇)，添 加作爲硬化劑的聚異氰酸酯化合物Coronate-L(日本聚氨 酯股份有限公司製，商品名）3質量份，進一步添加作爲 光聚合起始劑的IRGACURE 184(日本汽巴精化股份有限 公司製，商品名）5質量份，藉此獲得放射線硬化性的黏 著劑組成物1。 (接著劑組成物的調製） <接著劑組成物> 在包含作爲環氧樹脂的甲酚酚醛型環氧樹脂（環氧當 量197、分子量1 200、軟化點70 °C)5〇質量份、作爲矽烷 偶合劑的γ-锍丙基三甲氧基矽烷1 ·5質量份、γ-脲丙基三 乙氧基矽烷3質量份、平均粒徑1 6nm的二氧化矽塡充劑 3 〇質量份的組成物中，添加環己酮並攪捽混合，進一步 使用珠磨機混煉90分鐘。在其中，作爲丙烯酸樹脂是添 -18- 201127732 加1 Ο 〇重量份的化合物（1)的溶液，作爲硬化劑’是添加1 質量份的Coronate-L，攪拌混合得到接著劑組成物1。 化合物（1)是在作爲溶劑之甲苯400g中添加：丙烯酸 正丁酯240g、甲基丙烯酸甲酯133g、甲基丙烯酸6g、適 當調整滴入量之作爲聚合起始劑之過氧化苯甲醯’藉由調 整反應溫度及反應時間而獲得之具有官能基的化合物。 ^ (晶圓加工用膠帶1) 0 使用支承基材、黏著劑組成物1、接著劑組成物1， 按照上述的方法依序積層支承基材、能量線硬化型黏著劑 層、接著薄膜而製作晶圓加工用膠帶1。所製作的晶圓加 工用膠帶 1的形狀如第 5圖所示，膠帶寬度（d5)爲 290mm、接著劑層的直徑（d6)爲2 2 0mm、標記部的直徑爲 2 7 0 m m，且接著劑層及標記部的中心是重疊在晶圓加工用 膠帶的中心線上。 ❹ (捲芯） 如第1圖及第3圖所示，將支承部的寬度（d!， dT )、支承部的直徑（d3，d3 ’ ）、空洞部的直徑（d4， d4’ ）、捲芯長邊方向的長度設定爲一定，將從支承部表 面到緩和部表面的緩和部深度（d 2，d 2 ’ ）改變的啞鈴型捲 芯（實施例1〜5)和變形啞鈴型捲芯（實施例6〜10)，使用 ABS樹脂製作成以下的形狀。 -19- 201127732 (實施例1) 製作ι§5鈴型捲芯之實施例〗，其支承部的直徑（d 3)設 疋爲148mm、支承部的寬度d)設定爲3〇rnni、從支承部 表面到緩和部表面的緩和部的深度（d 2)設定爲1 · 〇 m m、空 洞部的直徑（tU)設定爲76.2mm、捲芯長邊方向的長度設定 爲290mm ’且使支承部、緩和部及空洞部的中心與捲芯 旋轉中心一致。 (實施例2) 除將從支承部表面到緩和部表面的緩和部的深度（d2) 設定爲5 . Omm外，與實施例丨的啞鈴型捲芯同樣地製作 成實施例2之啞鈴型捲芯。 (實施例3) 除將從支承部表面到緩和部表面的緩和部的深度（I) 叹疋爲1 5 · 0mm外，與貫施例i及2的啞鈴型捲芯同樣地 製作成實施例3的啞鈴型捲芯。 (實施例4) 除將從支承部表面到緩和 設定爲3 〇 · 〇 m m外，與實施例 作成實施例4的啞鈴型捲芯。 部表面的緩和部的深度（) 1〜3的啞鈴型捲芯同樣地製 (實施例5) -20- 201127732 除將從支承部表面到緩和部表面的緩和部的深度（d2) 設定爲40.0mm外’與實施例1〜4的啞鈴型捲芯同樣地製 作成實施例5的啞鈴型捲芯。 (實施例6) 製作變形啞鈴型捲芯之實施例6，是將緩和部側部作 成彎曲的曲面，支承部的直徑（d3’ ）設定爲148mm、支承 ^ 部的寬度（ch，）設定爲3〇mm、從支承部表面到緩和部表 面的緩和部的深度（d 2 )設定爲1 · 〇 m m、空洞部的直徑 (d4 ')設定爲76.2mm、捲芯長邊方向的長度設定爲 2 9 0mm，且使支承部、緩和部及空洞部的中心與捲芯旋轉 中心一致。 (實施例7) 除將從支承部表面到緩和部表面的緩和部的深度 Q (d2’ ）設定爲5.〇mm外’與實施例6的啞鈴型捲芯同樣地 製作成實施例7的啞鈴型捲芯。 (實施例8) 除將從支承部表面到緩和部表面的緩和部的深度 (d2，）設定爲l5.〇mm外，與實施例6及7的啞鈴型捲芯 同樣地製作成實施例8的®鈴型捲芯。 (實施例9) -21 - 201127732 除將從支承部表面到緩和部表面的緩和部的深度 (d/ )設定爲30.0mm外，與實施例6〜8的B亞鈴型捲芯同 樣地製作成實施例9的啞鈴型捲芯。 (實施例10) 除將從支承部表面到緩和部表面的緩和部的深度 (f )設定爲4〇.〇mm外，與實施例6〜9的P亞鈴型捲芯同 樣地製作成實施例1 0的啞鈴型捲芯。 (比較例1) 使用AB S樹脂製作啞鈴型捲芯之比較例丨，其支承部 的直徑d)設定爲l48mm、支承部的寬度（d,)設定爲 3 0mm、從支承部表面到緩和部表面的緩和部的深度（d2)設 定爲0.8mm、空洞部的直徑（d4)設定爲76.2mm、捲芯長邊 方向的長度設定爲290mm，且使支承部、緩和部及空洞 部的中心與捲芯旋轉中心一致。 (比較例2) 另外’製作變形啞鈴型捲芯之比較例2，是將緩和部 側部作成彎曲的曲面，支承部的直徑（d3 ’ ）設定爲 l48mm、支承部的寬度（di，）設定爲30mm、從支承部表 面到緩和部表面的緩和部的深度（d2，）設定爲0.8mm、空 洞部的直徑U4’ ）設定爲76 2mm、捲芯長邊方向的長度設 定爲29〇mm ’且使支承部、緩和部及空洞部的中心與捲 -22- 201127732 芯旋轉中心一致。 藉由以下所示的評價方法，評價轉印痕的抑制性。 (轉印痕的抑制性的評價方法） 使用貫施例1 ~5的®鈴型捲芯、實施例6〜丨〇的變形 啞鈴型捲心、比較例1的啞鈴型捲芯、比較例2的變形啞 金τι型捲心’將290mm寬的晶圓加工用膨帶用15N的 0 一定張力捲取300片’製作捲筒體。然後，將捲筒體在 5 C的is境下冷藏保管1 4日的時間。；1;後，藉由目測觀 察，判定有無褶皺。 表1表示評價結果。表中〇表示沒有產生褶皺，χ表 示產生了措皴’ △表示即使稍有褶皺，但該褶皺的程度不 致在晶圓接合時捲入空氣。 [表1]BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a winding core for winding a wafer processing tape into a roll, and more particularly to a wafer processing tape having a film for dicing and die bonding. The film wound in a roll shape has a function of a dicing tape and a die bonding film. 〇[Prior Art] In recent years, a film for cutting and die bonding has been developed which has both functions of a dicing tape and a die-bonding film; the dicing tape is used to cut (separate) a semiconductor wafer into individual pieces. The wafer is used for fixing a semiconductor wafer; the die bond film (also referred to as a die attach film) is used for attaching the diced semiconductor wafer to a lead frame, a package substrate, etc., or for use in a stacked package. The semiconductor wafers are laminated to each other and then. Q As such a film for dicing and die bonding, pre-cut processing may be performed in consideration of workability such as attaching a wafer to a wafer and attaching it to a ring frame at the time of cutting. Examples of the film for dicing and die bonding which are subjected to pre-cut processing are shown in Figs. 4 and 5 . Fig. 4, Fig. 5(A) and Fig. 5(B) are schematic, plan and cross-sectional views, respectively, of a wafer processing tape 30 having a film 40 for dicing and die bonding. The wafer processing tape 30 includes a release film 3 1 , an adhesive layer 3 2 , and an adhesive film 3 3 . The layer 3 2 is then processed into a circular shape corresponding to the shape of the wafer, having a circular mark shape. The adhesive film-5-201127732 3 3 is a peripheral portion of a circular portion corresponding to the shape of the circular frame for cutting. The circular portion 3 3 a and the peripheral portion 3 surrounding the outer portion thereof are removed as shown in the figure. 3 b. The circular layer portion 33a of the adhesive layer 3 2 and the adhesive film 3 3 are laminated in a center-consistent manner, and the circular marking portion 33a of the adhesive film 33 covers the adhesive layer 32' and is surrounded by the release film. 31 contact. Further, the film for dicing and die bonding 40 is formed by the laminated structure constituting the circular marking portion 3 3 a of the adhesive layer 32 and the adhesive film 33. When the wafer is diced, the release film 31 is peeled off from the adhesive layer 3 2 and the adhesive film 3 3 in the build-up state. As shown in Fig. 6, the semiconductor wafer W is attached to the adhesive layer 32. The back surface 'adheres to the outer peripheral portion of the circular mark portion 3 3 a of the adhesive film 3 3 to fix the cutting ring frame R. In this state, after the semiconductor wafer W is cut, the adhesive film 3 3 is subjected to a hardening treatment such as ultraviolet irradiation or the like, and then the semiconductor wafer is picked up. At this time, the adhesive film 33 is subjected to a curing treatment to lower the adhesive force, and is easily peeled off from the adhesive layer 32, and the semiconductor wafer is picked up while the adhesive layer 32 is adhered to the back surface. The adhesive layer 3 2 ' attached to the back surface of the semiconductor wafer has a function as a die-bonding film when the semiconductor wafer is attached to a lead frame, a package substrate or other semiconductor wafer. As shown in Figs. 4 and 5, the above-mentioned wafer processing tape 3 〇, the portion where the adhesive layer 3 2 and the circular mark portion 3 3 a of the adhesive film 3 3 are laminated is thicker than the other portions. Therefore, the conventional winding core 50 shown in Fig. 7 is used, that is, the core 50 of the cylindrical cavity portion 5 is formed at the center of rotation, and the wafer processing tape 3 is shown as shown in Fig. 8. When the product is wound into a roll of -6-201127732 as a product, the adhesive film 3 3 formed by removing the adhesive film 33 is removed from the laminated portion of the adhesive layer 32 and the circular mark portion 33a of the adhesive film 33. The step difference of the mold film is overlapped, and a phenomenon in which the step difference is transferred to the surface of the soft adhesive layer 32 is generated, that is, the transfer mark (also referred to as mark mark, wrinkle, or curl mark) shown in Fig. 9 is produced. . The occurrence of such a transfer mark is particularly remarkable when the adhesive layer 32 is formed of a soft resin, or when the adhesive layer 3 is thick, and when the number of windings of the tape 30 is large. Further, when a transfer mark is generated, air is trapped between the adhesive layer and the semiconductor wafer 0, and it is impossible to adhere to each other. As a result, a defect may occur and an abnormality may occur during processing of the wafer. In order to suppress the occurrence of the above-mentioned transfer marks, it is conceivable to reduce the take-up pressure of the film. According to the method, the winding deviation of the product may be generated, for example, it is difficult to install the tape-adhesive machine, etc., in actual use of the film. Causes obstacles. Further, in order to suppress the generation of the above-mentioned mark marks, Patent Document 1 discloses and discloses a back sheet in which a support layer (having an adhesive layer and an adhesive film) is provided outside the adhesive layer and the adhesive film on the release substrate. The total film thickness is the same or thicker than the film thickness). In the succeeding sheet of Patent Document 1, the take-up pressure applied to the succeeding sheet can be dispersed or concentrated on the support layer by the support layer, and the generation of the transfer mark can be suppressed. [Patent Document 1] Japanese Laid-Open Patent Publication No. 2007-2 173. SUMMARY OF THE INVENTION However, the adhesive sheet of the above-mentioned Patent Document 1 is other than the adhesive layer and the adhesive film which are necessary for manufacturing a semiconductor device on the peeling substrate 201127732. The portion is formed with a support layer, and the width of the support layer is limited to 'the outer diameter of the adhesive layer and the adhesive film, and the width of the support layer is narrow', which causes a problem that the effect of suppressing the mark marks is insufficient. In addition, since the support layer usually does not have adhesiveness and cannot be sufficiently adhered to the release substrate (PET film), it is easy to float from the release substrate in the narrowest portion of the support layer, and the wafer is bonded and cut on the wafer. In the case of a film for grain bonding, the above-mentioned floating portion is hooked to the device to cause a problem of wafer damage. Further, it is also conceivable to increase the width of the support layer, but since the width of the entire tape for the crystal processing is widened, it is difficult to use the existing equipment. In addition, since the support layer is the portion that is finally discarded, increasing the width of the support layer causes an increase in material cost. Accordingly, an object of the present invention is to provide a core for winding a wafer for processing a wafer having a dicing and die-bonding film into a roll, and to have a film for dicing and die bonding on the release film ( When the wafer processing tape having the adhesive layer and the adhesive film is wound into a roll shape, the occurrence of transfer marks on the adhesive layer can be sufficiently suppressed. In order to achieve the above object, a wafer processing tape is wound into a roll core, and the wafer processing tape includes a release film, and is provided on a surface of the release film and has a predetermined shape. a planar shape adhesive layer; and an adhesive film having a marking portion and a peripheral portion, the marking portion having a predetermined planar shape, being disposed to cover the adhesive layer and contacting the release film around the adhesive layer The peripheral portion is disposed to surround the outer side of the marking portion; the winding core has a damper portion for relaxing the winding pressure at least at a position corresponding to the adhesive layer of -8 - 201127732, and is wound The wafer processing tape is formed on the outer side of the relaxation portion in the width direction of the tape for supporting the support portion for the wafer processing tape. According to the above invention, the core for winding a wafer is wound into a roll-shaped core, and is provided in a film for dicing and die bonding (having a predetermined planar shape of an adhesive layer or a predetermined planar shape). The position of the portion covering the adhesive layer and the mark portion in contact with the release film around the adhesive layer does not form the support portion of the winding core, so that the winding pressure is reduced (moderated) and can be sufficiently suppressed Subsequent transfer marks on the agent layer are produced. Further, in the winding core in which the tape for processing a wafer is wound into a roll shape, it is preferable that the absorbing portion and the support portion have a cylindrical shape, and the absorbing portion is formed by increasing the diameter of the support portion. According to the above aspect of the invention, the winding core of the wafer processing tape is wound into a roll-shaped core, and the support portion having a large diameter formed on the outer side of the relaxation portion in the width direction of the wound wafer processing tape can be used. It is not necessary to form the damper portion and the support portion as independent members, and the tempering portion for easing the winding pressure can be formed by the shape of the winding core. Further, it is preferable that the shape of the relaxation portion is such that the relief portion and the support portion are formed in a stepped shape, and the relief portion and the support portion are connected by a curved surface. Further, as the winding core in which the tape for wafer processing is wound into a roll shape according to the present invention, it is preferable that the cylindrical cavity portion to be attached to the take-up roll or the feed roller is formed at the center of rotation. According to the above invention, the wafer processing tape is wound into a roll-shaped winding core, and the cavity portion can be formed without affecting the shape of the absorbing portion and the support portion. -9 - 201127732 Further, the tape for wafer processing wound around a winding core of the present invention is wound around the above-mentioned winding core. According to the present invention, a wafer processing tape is wound into a roll-shaped core, and a wafer for processing a wafer for dicing and die bonding (having an adhesive layer and an adhesive film) on a release film is provided. When the coil is wound into a roll shape, the occurrence of transfer marks on the adhesive layer can be sufficiently suppressed. Further, according to the tape for wafer processing wound on the core of the present invention, the generation of transfer marks on the adhesive layer can be sufficiently suppressed without entraining air between the adhesive layer and the semiconductor wafer, and the semiconductor wafer is subsequently carried In the case of a lead frame, a package substrate, or another semiconductor wafer, an abnormality in wafer processing occurs without causing a defect. [Embodiment] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Fig. 1 is a view showing a winding core in which a wafer processing tape of the present embodiment is wound into a roll shape, and Fig. 1(A) is a cross-sectional view of the winding core of the embodiment. To map. Fig. 2 is a view for explaining a state in which the tape for winding a wafer is wound by the core of the embodiment. Fig. 3 is a cross-sectional view showing a winding core of another embodiment. First, the tape for wafer processing wound around the core of the present embodiment will be described. Further, the tape for wafer processing wound around the core of the present embodiment is a long strip-shaped tape for processing wafers 30 as shown in Figs. 4 and 5 . Wafer Processing Tape -10- 201127732 Hereinafter, each constituent element of the wafer processing tape wound around the winding core of the present embodiment will be described in detail. (Release film) As the release film for the tape for wafer processing, a well-known polyethylene terephthalate (PET) type, polyethylene type, or other film which has been subjected to mold release treatment can be used. The thickness of the release film is not particularly limited and may be appropriately set, and is preferably 25 to 50 μm. 〇 (Binder layer) The subsequent layer is bonded to a wafer after being bonded to a semiconductor wafer and diced, and is attached to the wafer as an adhesive when the wafer is fixed to the substrate or the lead frame. Therefore, the adhesive layer has a peeling property that can be peeled off from the adhesive film in a state of being attached to the singulated semiconductor at the time of picking up the wafer, and has a peeling property for fixing the wafer Q to the substrate and the lead in the case of performing die bonding. The full reliability of the shelf. The adhesive layer is formed by previously thinning an adhesive, and for example, a known polyimine resin, a polyamide resin, a polyether quinone resin, a polyamide amide resin, or the like can be used. Polyester resin, polyester resin, polyester phthalimide resin, phenoxy resin, poly maple resin, polyether oxime resin, polyphenylene sulfide resin, polyether ketone resin, chlorinated polypropylene resin, acrylic resin, polyurethane Resin 'epoxy resin, polypropylene amide resin, melamine resin, and the like, and mixtures thereof. In addition, in order to strengthen the bonding force to the wafer and the lead frame, the father or the titanium coupling agent is added as an additive to the aforementioned materials or a mixture thereof in -11 - 201127732. The thickness of the layer of the subsequent layer is not particularly limited. Usually, it is preferably about 5 to 100 μm. Further, the adhesive layer may be laminated on the entire surface of the adhesive film, or may be previously cut (pre-cut) into a film corresponding to the shape of the wafer to be bonded. In the case where the laminated film corresponding to the wafer is laminated, as shown in Fig. 6, the adhesive layer 32 is present in the portion where the wafer W is bonded, and the adhesive layer 32 is not provided in the portion of the annular frame R to which the cutting is applied. There is only a circular marking portion 3 3 a of the adhesive film. In general, since the adhesive layer is not easily peeled off from the adherend, by using the pre-cut adhesive layer, the annular frame R can be attached to the adhesive film, and it is not easy to be in the ring frame when peeling off the film after use. The effect of residual glue is generated. (Adhesive film) The adhesive film has a sufficient adhesive force for the wafer to be peeled off when the wafer is diced, and a low adhesion which can be easily peeled off from the adhesive layer when the wafer is picked up after dicing. For example, it can be formed by providing an adhesive layer on a substrate film. The base film of the adhesive film is not particularly limited as long as it is a conventionally known base film. However, a radiation curable material is used as an adhesive layer to be described later, and it is preferable to use a radiation-transmitting material. material. For example, 'as a material thereof, polyethylene, polypropylene, ethylene-propylene copolymer, polybutene-1, poly-4_methylpentene-1, ethylene-vinyl acetate copolymer, ethylene-ethyl acrylate Copolymer, ethylene-acrylic acid methyl-12 - 201127732 vinegar copolymer, ethylene-acrylic acid copolymer, homopolymer or copolymer of α-olefin, such as a dispersing polymer, or a mixture thereof; polyurethane, styrene-ethylene - Thermoplastic elastomers such as butyl or pentene copolymers, polyamine-polyol copolymers, and the like. Further, the base film may be formed by mixing two or more materials selected from the above group, or may be formed by laminating or multilayering them. The thickness of the base film is not particularly limited and may be appropriately set, and is preferably 50 to 20 μm. 0 is not particularly limited as the resin used in the adhesive layer of the adhesive film. A known chlorinated polypropylene resin, acrylic resin, polyester resin, urethane resin, epoxy resin or the like which can be used for the adhesive can be used. In the resin of the adhesive layer, an adhesive such as an acrylic adhesive, a radiation polymerizable compound, a photopolymerization initiator, a curing agent or the like is preferably blended to adjust the adhesive. The thickness of the adhesive layer can be appropriately set, and is preferably 5 to 30 μm. When the radiation polymerizable compound is blended in the adhesive layer, it is easily peeled off from the adhesive layer by radiation hardening by Q. The radiation polymerizable compound is, for example, a low molecular weight compound having at least two photopolymerizable carbon-carbon double bonds in a molecule capable of forming a three-dimensional network by light irradiation. Specifically, trimethylolpropane triacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, dipentaerythritol monohydroxypentaacrylate, dipentaerythritol hexaacrylate, 1,4-butanediol diacrylate, 1,6-hexanediol diacrylate, polyethylene glycol diacrylate, and oligoester acrylate. Further, in addition to the above acrylate-based compound, a urethane acrylate-based oligomer may be used. A urethane acrylate oligomer is an acrylate or methacrylate having a hydroxyl group (for example, 2-hydroxyethyl acrylate, 2-hydroxyethyl methacrylate, 2-hydroxypropyl acrylate, 2-methacrylic acid 2- a reaction of a hydroxypropyl acrylate, a polyethylene glycol acrylate, a polyethylene glycol methacrylate, or the like with a terminal isocyanate polyurethane prepolymer; the terminal isocyanate polyurethane prepolymer is a polyester type or a polyether type, etc. Polyol compound and polyisocyanate compound (for example, 2,4-toluene diisocyanate, 2,6-toluene diisocyanate, 1,3-benzenedimethyl diisocyanate, 1,4-benzenedimethyl diisocyanate, diphenyl Methane-4,4-diisocyanate, etc.) obtained by reaction. Further, the adhesive layer may be formed by mixing two or more kinds selected from the above resins. In the case of using a photopolymerization initiator, for example, benzoin isopropyl ether, benzoin isobutyl ether, benzophenone, michlerone, chlorothioxanthone, twelfth thioxanthone, dimethylthiophene can be used. Tons of ketone, diethyl thioxanthone, benzyl ketal, α-hydroxycyclohexyl phenyl ketone, 2-methyl phenylpropane, and the like. The amount of the photopolymerization initiator to be added is preferably 0.01 to 5 parts by mass based on 1 part by mass of the acrylic copolymer. <First Embodiment> As shown in Fig. 1, in the winding core of the present embodiment, a relief portion 1 having a small diameter and a support portion having a large diameter are formed on the winding surface side of the wafer processing tape. 1 2 dumbbell type core. The relaxation portion π is provided at a position corresponding to the adhesive layer of the dicing tape for wafer processing and the film for die bonding (the adhesive layer and the mark portion of the adhesive film covering the adhesive layer of the coating layer -14-201127732). The support portion 12' is a peripheral portion 33b that is provided on the outer side of the relaxation portion n to support the adhesive film. Further, a cylindrical cavity portion 13 is formed at the center of rotation of the winding core. The material of the core is not particularly limited, and ABS resin, polyvinyl chloride resin, iron, or the like can be selected from the viewpoints of ease of handling, weight, and the like. ^ (Relieving portion 1 1 ) As shown in Fig. 1, the absorbing portion 1 1 is formed by a cylindrical surface having a diameter (centered on the central axis of rotation of the winding core 1 ) and smaller than the support portion 12 . Further, a relief portion side portion 14 that is perpendicular to the relaxation portion 1 1 is formed at both ends of the relaxation portion 1 1 . Therefore, the relaxation portion 1 1 and the support portion j 2 having a larger diameter than the relaxation portion 1 1 are formed in a stepped shape. When the depth (d2) of the relaxation portion 1 1 is less than 1 mm, the effect of suppressing the transfer mark cannot be obtained. When the thickness exceeds 40 mm, the winding of the wafer processing tape 30 becomes difficult. Therefore, it is preferably 1 mm to 40 mm. 〇 (Support portion 1 2 ) The support portion 12 is formed on both sides in the outer direction of the winding core with respect to the central axis of rotation of the winding core 10, and has a cylindrical surface larger than the diameter of the absorbing portion 1 1 as the outer surface. Therefore, the other members including the support portion 12 are not required to be provided as separate members, and the tempering portion π for relieving the winding pressure can be formed only in accordance with the shape of the winding core 10. When the width (d,) of the support portion 12 is less than 1 mm, the winding of the wafer processing tape 30 becomes difficult, and therefore it is preferably 1 mm or more. Further, the absorbing portion 1 1 is provided corresponding to the adhesive layer 3 2 and 15-201127732, and considering the width of the semiconductor processing tape 30 (d 5 in FIG. 5), the size of the entire core 1 is not large. It is necessary to go beyond the viewpoint of 'more than 3 5 mm. (Cave portion 1 3 ) The cavity portion 13 is a cylindrical cavity portion ′ whose central axis is the same as the central axis of rotation of the winding core 1 . Moreover, 'is used to mount to a take-up roll or a take-up roll. The distance from the central axis of rotation of the winding core 10 to the curved surface of the cavity portion 13 is formed to be smaller than the distance from the absorbing portion 1 1 . Therefore, the hollow portion 13 does not affect the shape of the damper portion 1 1 and the support portion 1 2 . Fig. 2 shows a state in which the wafer processing tape 30 is wound by the winding core 1 of the present embodiment. Supporting the wafer processing tape by the two support portions 1 2 formed outside the core 1 可 can apply a desired take-up pressure to the wafer processing tape, and on the other hand 'by corresponding to the position of the adhesive The easing portion 11 does not press the winding core on the wafer processing tape (adhesive layer), so that the winding pressure can be alleviated (mitigated). As a result, the generation of transfer marks on the adhesive layer can be suppressed. <Second Embodiment> The winding core 20 of the second embodiment is a winding core in which the relief portion side portion 14 of the winding core 1 of the first embodiment is curved. Fig. 3 is a cross-sectional view showing the winding core 2 of the second embodiment. The winding core 20 is a deformed dumbbell type winding core in which a relief portion 21 having a small diameter and a support portion 22 having a large diameter are formed on the winding surface side of the wafer processing tape. As shown in Fig. 3, the mitigation portion 21 is a mitigation portion 21 having a diameter smaller than the diameter of the rotation center axis of the winding core 20, which is smaller than the support portion 22, and is mitigating The portion 2 of the relief portion of the curved portion that is continuously curved. Further, the easing portion 21 is provided at a position corresponding to the adhesive layer of the dicing die for wafer processing and the film for die bonding, and the support portion 2 2 forms a peripheral portion 3 3 on the outer side of the absorbing portion 21 that can support the adhesive film. b. Further, a cylindrical cavity portion 23 is formed at the center of rotation of the winding core.实施 "Embodiment" Next, an embodiment of the present invention will be described, and the present invention is not limited to these embodiments. The wafer processing tape wound around the winding core was produced as follows. First, the preparation support base material (base material film) and the adhesive composition 1' are applied to the support substrate so that the thickness of the adhesive composition 1 after drying is 2 μm, and the adhesive composition is applied. Dry for 3 minutes under the enamel to make an adhesive film. Next, the adhesive composition 1 was prepared, and the adhesive composition was applied to the release liner made of the polyethylene terephthalate film subjected to the Q release treatment, and the thickness of the adhesive was 20 μm. The film was dried at 110 ° C for 3 minutes to form a film on the release liner. Then, the adhesive film and the adhesive film are cut into the shape shown in Fig. 4, and the film is bonded to the adhesive layer side of the adhesive film to form a wafer processing tape 1. Hereinafter, a method of preparing the support substrate, the adhesive composition 1, and the adhesive composition 1 will be described. (Preparation of Support Substrate) -17- 201127732 A resin bead made of a commercially available low-density polyethylene (NOVATEC-LL, manufactured by JEOL Ltd.) was melted at 140 ° C and formed by using an extruder. It is a long strip film shape with a thickness of ΙΟΟμηι. (Preparation of Adhesive Composition) First, as a compound (radio) having a radiation-curable carbon-carbon double bond and a functional group, 2-ethylhexyl acrylate, 2-hydroxyethyl acrylate, and methacrylic acid were produced. A copolymer compound having a mass average molecular weight of 70,000, a glass transition temperature of -6 4 ° C, and a radiation hardening carbon-carbon double bond amount of me 9 meq / g. To the compound (〇), a polyisocyanate compound Coronate-L (manufactured by Nippon Polyurethane Co., Ltd., trade name) as a curing agent was added in an amount of 3 parts by mass, and IRGACURE as a photopolymerization initiator was further added. 185 (manufactured by Nippon Ciba Specialty Chemicals Co., Ltd., trade name) was used in an amount of 5 parts by mass to obtain a radiation curable adhesive composition 1. (Preparation of an adhesive composition) <Adhesive composition> The cresol novolac type epoxy resin (epoxy equivalent 197, molecular weight 1 200, softening point 70 ° C) as an epoxy resin is contained in an amount of 5 parts by mass. Γ-锍propyltrimethoxydecane 1·5 parts by mass, γ-ureidopropyltriethoxydecane 3 parts by mass, and an average particle diameter of 16 nm of cerium oxide filling agent 3 〇 as a decane coupling agent To the composition of the mixture, cyclohexanone was added, mixed by stirring, and further kneaded using a bead mill for 90 minutes. In the above, as the acrylic resin, a solution of the compound (1) in which -18-201127732 is added in an amount of 1 Ο , is used as a curing agent, and 1 part by mass of Coronate-L is added, and the mixture is stirred and mixed to obtain an adhesive composition 1. The compound (1) is added to 400 g of toluene as a solvent: 240 g of n-butyl acrylate, 133 g of methyl methacrylate, 6 g of methacrylic acid, and a suitable polymerization amount of benzammonium peroxide as a polymerization initiator. A compound having a functional group obtained by adjusting a reaction temperature and a reaction time. ^ (Adhesive Tape 1 for Wafer Processing) 0 Using a support substrate, an adhesive composition 1, and an adhesive composition 1, a support substrate, an energy ray-curable adhesive layer, and a film are sequentially laminated by the above-described method. Wafer processing tape 1. The shape of the prepared wafer processing tape 1 is as shown in Fig. 5, the tape width (d5) is 290 mm, the thickness of the adhesive layer (d6) is 2,200 mm, and the diameter of the marking portion is 270 mm, and The center of the subsequent layer and the marking portion are superposed on the center line of the wafer processing tape. ❹ (core) As shown in Figs. 1 and 3, the width (d!, dT) of the support portion, the diameter (d3, d3 ') of the support portion, and the diameter (d4, d4') of the cavity portion, The length of the longitudinal direction of the core is set to be constant, and the dumbbell-shaped core (Examples 1 to 5) and the deformed dumbbell type which change the depth (d 2, d 2 ') of the relaxation portion from the surface of the support portion to the surface of the relaxation portion The core (Examples 6 to 10) was formed into the following shape using ABS resin. -19-201127732 (Embodiment 1) An example of producing a §5 bell core, the diameter (d 3) of the support portion is set to 148 mm, and the width d) of the support portion is set to 3 〇rnni, from the support The depth (d 2) of the relief portion from the surface of the portion to the surface of the relaxation portion is set to 1 · 〇 mm, the diameter (tU) of the cavity portion is set to 76.2 mm, and the length in the longitudinal direction of the winding core is set to 290 mm ', and the support portion, The center of the easing portion and the cavity portion coincides with the center of rotation of the winding core. (Example 2) A dumbbell-shaped roll of Example 2 was produced in the same manner as the dumbbell-shaped core of Example 除 except that the depth (d2) of the absorbing portion from the surface of the support portion to the surface of the damper portion was set to 5 mm. core. (Example 3) An example was produced in the same manner as the dumbbell-shaped core of the examples i and 2 except that the depth (I) of the relaxation portion from the surface of the support portion to the surface of the relaxation portion was 10.5 mm. 3 dumbbell type core. (Example 4) A dumbbell-shaped core of Example 4 was prepared in the same manner as in the Example except that the surface of the support portion was relaxed to 3 〇 · 〇 m m . The dumbbell-shaped core of the depth () of the relief portion on the surface of the portion (1) is similarly produced (Example 5) -20-201127732 except that the depth (d2) of the mitigation portion from the surface of the support portion to the surface of the damper portion is set to 40.0. In the same manner as the dumbbell-shaped core of Examples 1 to 4, the dumbbell-shaped core of Example 5 was produced. (Embodiment 6) In the sixth embodiment in which the deformed dumbbell-shaped core is produced, the side portion of the damper portion is curved, and the diameter (d3') of the support portion is set to 148 mm, and the width (ch) of the support portion is set to 3〇mm, the depth (d 2 ) of the relaxation portion from the surface of the support portion to the surface of the relaxation portion is set to 1 · 〇 mm, the diameter (d4 ') of the cavity portion is set to 76.2 mm, and the length in the longitudinal direction of the winding core is set to 290 mm, and the center of the support portion, the mitigation portion, and the cavity portion coincide with the center of rotation of the winding core. (Example 7) The same procedure as in the dumbbell-shaped core of Example 6 was carried out except that the depth Q (d2') of the mitigation portion from the surface of the support portion to the surface of the damper portion was set to 5. 〇mm Dumbbell type core. (Example 8) Example 8 was produced in the same manner as the dumbbell-shaped core of Examples 6 and 7 except that the depth (d2) of the relaxation portion from the surface of the support portion to the surface of the relaxation portion was set to 15.5 mm. ® bell core. (Example 9) -21 - 201127732 In the same manner as the B-type bell core of Examples 6 to 8, except that the depth (d/) of the relaxation portion from the surface of the support portion to the surface of the relaxation portion was set to 30.0 mm. The dumbbell-shaped core of Example 9 was used. (Example 10) The same procedure as in the P-bell core of Examples 6 to 9 was carried out except that the depth (f) of the relaxation portion from the surface of the support portion to the surface of the relaxation portion was set to 4 〇.〇mm. Example 10 dumbbell shaped core. (Comparative Example 1) A comparative example in which a dumbbell-shaped core was produced using AB S resin, the diameter d) of the support portion was set to be l48 mm, and the width (d,) of the support portion was set to 30 mm, from the surface of the support portion to the mitigation portion. The depth (d2) of the relief portion of the surface is set to 0.8 mm, the diameter (d4) of the cavity portion is set to 76.2 mm, and the length in the longitudinal direction of the winding core is set to 290 mm, and the center of the support portion, the mitigation portion, and the cavity portion is set. The center of rotation of the core is consistent. (Comparative Example 2) In Comparative Example 2, in which the deformed dumbbell-shaped core was produced, the side portion of the damper portion was curved, and the diameter (d3') of the support portion was set to be l48 mm, and the width (di) of the support portion was set. The depth (d2) of the relaxation portion from the surface of the support portion to the surface of the relaxation portion is set to be 0.8 mm, the diameter U4' of the cavity portion is set to 76 2 mm, and the length in the longitudinal direction of the winding core is set to 29 mm. The center of the support portion, the mitigation portion, and the cavity portion is made to coincide with the core rotation center of the -22-201127732. The inhibition of the transfer mark was evaluated by the evaluation method shown below. (Method for Evaluating Inhibition of Transfer Marks) The bell-shaped core of the examples 1 to 5, the deformed dumbbell-shaped core of the example 6 to 、, the dumbbell-shaped core of the comparative example 1, and the dumbbell-shaped core of the comparative example 2 were used. The deformed dummy gold τι type core is made of a 290 mm wide wafer processing swell with a roll of 300 pieces of 15 N of 0 constant tension. Then, the roll body was stored under a 5 C is kept for a period of 14 days. ;1; After that, by visual observation, it is determined whether there is wrinkles. Table 1 shows the results of the evaluation. In the table, 〇 indicates that no wrinkles are generated, and χ indicates that a measure 皴 Δ indicates that even if it is slightly wrinkled, the wrinkles are not soaked in air at the time of wafer bonding. [Table 1]
緩和部深度 d2 Γπιιηΐ 晶圓加工用膠帶1 實施例1 1 .0 Λ 實施例2 5.0 Λ 實施例3 15.0 〇 實施例4 30.0 〇 實施例5 40.0 〇 實施例6 1.0 Λ 實施例7 5.0 Λ 實施例8 15.0 〇 實施例9 30.0 〇 實施例1 〇 40.0 〇 比較例1 0.8 __ χ 比較例2 0.8 X 23- 201127732 在從支承部表面到緩和部表面的緩和部深度（d2， d 2 ’）爲未達1 · 0 m m的啞鈴型捲芯的比較例1和變形租鈴 型捲芯的比較例2 ’確認會產生措數。再者，在從支承部 表面到緩和部表面的緩和部深度（d2，d2’ ）爲1.0mm以上 但未達5.0 m m的啞鈴型捲芯的實施例1〜2和變形啞鈴型 捲芯的實施例6〜7，確認有稍微的褶皺，但該褶皺的程度 不致在晶圓接合時捲入空氣。另一方面，在從支承部表面 到緩和部表面的緩和部深度（d2，d2’ ）在1 5 .〇mm以上的 啞鈴型捲芯的實施例3〜5和變形啞鈴型捲芯的實施例 8~ 1 〇，無法確認有褶皴的產生。因此，在從支承部表面到 緩和部表面的緩和部涂度（d 2，d 2 ’ ）未達1 · 0 m m的情況 下，確認是沒有抑制轉印痕產生的效果。另一方面，本實 施形態的啞鈴型捲芯及變形啞鈴型捲芯之任一者，在超過 4 0mm的情況下，晶圓加工用膠帶的捲取都會變困難。 另外，在支承部寬度（d 1 ’ d Γ )未達1 . 0 m m的情況， 晶圓加工用膠帶的捲取困難。 如上所述，依據本實施形態的將晶圓加工用膠帶捲繞 成捲筒狀的捲芯，藉由將從支承部表面到緩和部表面的緩 和部深度（d2，d2 ’ ）設定爲既定値’在將晶圓加工用膠帶 捲取爲捲筒狀的情況’可充分抑制接著劑層上的轉印痕產 生。 【圖式簡單說明】 第1(A)圖爲本實施形態的捲芯的剖面圖’第1(B)圖 -24- 201127732 爲槪要圖。 第2圖爲使用本實施形態的捲芯捲繞晶圓加工用膠帶 的狀態之說明圖。 第3圖是其他實施形態的捲芯的剖面圖。 第4圖是習知的晶圓加工用膠帶的槪要圖。 第5(A)圖爲習知的晶圓加工用膠帶的俯視圖，第5(B) 圖爲剖面圖。 第6圖是表示切割及晶粒接合用薄膜和切割用環形框 架貼合後的狀態的剖面圖。 第7(A)圖爲習知的捲芯的剖面圖，第7(B)圖爲側視 圖。 第8圖是使用習知的捲芯捲繞晶圓加工用膠帶的狀態 之說明圖。 第9圖是用於說明習知的晶圓加工用膠帶之異常的示 意圖。 【主要元件符號說明】 10 ， 50 :捲芯 1 1，21 :緩和部 12，22 :支承部 1 3，2 3，5 3 :空洞部 1 4，2 4 :緩和部側部 3 0 :晶圓加工用膠帶 3 1 :脫模薄膜 -25- 201127732 32 ： 33 ： 3 3a 3 3b 40 : di 5 d2， 接著劑層 黏著薄膜 :圓形標記部 :周邊部 切割及晶粒接合用薄膜 d i ：支承部寬度 d2 ’ ：從支承部表面到緩和部表面的緩和部的深度 -26-Relaxation depth d2 Γπιιηΐ Wafer processing tape 1 Example 1 1 .0 实施 Example 2 5.0 实施 Example 3 15.0 〇 Example 4 30.0 〇 Example 5 40.0 〇 Example 6 1.0 Λ Example 7 5.0 实施 Example 8 15.0 〇 Example 9 30.0 〇 Example 1 〇 40.0 〇 Comparative Example 1 0.8 __ χ Comparative Example 2 0.8 X 23- 201127732 The depth (d2, d 2 ') of the mitigation portion from the surface of the support portion to the surface of the damper portion is not Comparative Example 1 of a dumbbell-shaped core up to 1 mm mm and Comparative Example 2 of a deformed-charged core were confirmed to produce a number of measures. Further, Embodiments 1 to 2 of the dumbbell-shaped core having a depth (d2, d2') of the relief portion from the surface of the support portion to the surface of the relaxation portion of 1.0 mm or more but less than 5.0 mm and the implementation of the modified dumbbell-shaped core In Examples 6 to 7, it was confirmed that there was a slight wrinkle, but the degree of the wrinkles did not cause air to be trapped at the time of wafer bonding. On the other hand, Examples 3 to 5 of the dumbbell-shaped core having a depth (d2, d2') of the relief portion from the surface of the support portion to the surface of the dam portion of 15 〇 mm or more and the embodiment of the modified dumbbell-shaped core 8~ 1 〇, the occurrence of pleats could not be confirmed. Therefore, when the degree of application (d 2, d 2 ') of the relaxation portion from the surface of the support portion to the surface of the relaxation portion is less than 1.0 m, it is confirmed that the effect of suppressing the occurrence of the transfer mark is not suppressed. On the other hand, in any of the dumbbell-shaped core and the deformed dumbbell-shaped core of the present embodiment, when it exceeds 40 mm, the winding of the tape for wafer processing becomes difficult. Further, in the case where the support portion width (d 1 ' d Γ ) is less than 1.0 m, the winding of the wafer processing tape is difficult. As described above, according to the embodiment, the tape for processing a wafer is wound into a roll core, and the depth (d2, d2') of the relaxation portion from the surface of the support portion to the surface of the relaxation portion is set to a predetermined value. 'When the wafer processing tape is wound into a roll shape', the generation of transfer marks on the adhesive layer can be sufficiently suppressed. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1(A) is a cross-sectional view of a winding core of the present embodiment. Fig. 1(B) - 24 - 201127732 is a schematic view. Fig. 2 is an explanatory view showing a state in which the tape for wafer processing is wound by the winding core of the embodiment. Fig. 3 is a cross-sectional view showing a winding core of another embodiment. Fig. 4 is a schematic view of a conventional tape for wafer processing. Fig. 5(A) is a plan view of a conventional tape for wafer processing, and Fig. 5(B) is a cross-sectional view. Fig. 6 is a cross-sectional view showing a state in which a film for dicing and die bonding and a ring frame for dicing are bonded together. Fig. 7(A) is a cross-sectional view of a conventional core, and Fig. 7(B) is a side view. Fig. 8 is an explanatory view showing a state in which a tape for wafer processing is wound using a conventional core winding. Fig. 9 is a view for explaining an abnormality of a conventional tape for wafer processing. [Description of main component symbols] 10 , 50 : Core 1 1,21 : Relaxation part 12, 22 : Support part 1 3, 2 3, 5 3 : Cavity part 1 4, 2 4 : Relaxation part side part 3 0 : Crystal Tape for round processing 3 1 : Release film - 25 - 201127732 32 : 33 : 3 3a 3 3b 40 : di 5 d2 , Adhesive layer adhesive film: Round mark: peripheral film and die bonding film di : Support portion width d2 ': depth -26- from the surface of the support portion to the mitigation portion of the damper surface