TW201125072A - Method for producing micro-pores structure using 3-dimensional through-silicon via (TSV) technology. - Google Patents

Method for producing micro-pores structure using 3-dimensional through-silicon via (TSV) technology. Download PDF

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TW201125072A
TW201125072A TW99100048A TW99100048A TW201125072A TW 201125072 A TW201125072 A TW 201125072A TW 99100048 A TW99100048 A TW 99100048A TW 99100048 A TW99100048 A TW 99100048A TW 201125072 A TW201125072 A TW 201125072A
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micro
tsv
dimensional
fabricating
perforation
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TW99100048A
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TWI423390B (en
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Jing-Jou Tang
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Univ Southern Taiwan
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Abstract

The present invention relates to a method for producing micro-pores structure using 3-dimensional through-silicon via (TSV) technology. It comprises the following steps: A. forming plural micro-cavities on a surface of the silicon substrate; coating a metal strengthen layer on the inner wall of micro-cavities; C. thinning the silicon substrate and forming a micro-cavity on the location of the micro-cavities; said micro-cavities, respectively, each has a first opening and a corresponding second opening to form micro-pores structure in the silicon substrate. With this design, it can be used in a micro-nozzle, a rising-voltage structure and a filtered thin film.

Description

201125072 六、發明說明: 【發明所屬之技術領域】 [0001] _本發明係有關於-種以三維石夕穿孔技術(Tsv)製作 微穿孔結構之方法’特別是指藉由TSV技術將矽基板成型 為具有複數微穿孔之微穿孔結構,而使用於微型喷嘴、 升壓結構或者過濾薄片。 【先前技術】 [0002] Ο 〇 中華民國專利第1282325號「精密塑膠陣列式微穿孔 薄片之製造方法」,以製造出一上模及一下模,此上模 及下模係分別由下列步驟製成I〗.準備步驟' 2 χ光曝光 步驟、3.去除光罩步驟、4.電鑄成型步驟、5.去除中間 層步驟’藉此’將上述之分別具有預定凸部或凹部之上 模及下模對合而成為一模具組,再用供一塑膠射出機射 出,進而可製造出一精密塑膠陣列式微穿孔薄片,可應 用於喷墨印表機、生物晶片試劑或燃料電池整流細孔或 相關的奈米科技上,同時,其可使細孔具有特殊之幾何 形狀,以及其凸部及凹部彼此可精確對合卡入,大幅減 少修模或校正之手續及時間,然其缺點在於: 微穿孔孔徑過大:其主要應用於喷墨印表機上之噴 嘴薄片,其微穿孔直徑為100微米,相鄰微穿孔間距為 100至200微米,造成其精密度不佳,無法應用於需要更 小孔徑之微型喷嘴或升壓結構等用途,且孔徑過大亦造 成其無法應用於過濾薄片之用途。 【發明内容】 [0003] 爰此’為能成型更小孔徑之微穿孔,故本發明提供 099100048 表單編號A0101 第3頁/共15頁 0992000134-0 201125072 一種以三維矽穿孔技術(tsv)製作微穿孔結構之方法, 步驟如下: A.於一矽基板上成型複數個微孔槽。 於該些微孔槽之内壁分別塗佈—金屬強化層 八c.將該矽基板進行薄化處理,於該些微孔槽1置處 分別構成一微穿孔,該些微穿孔並分別具 一 ’、负一相對之第 幵口及第_開口,使該石夕基板成為一微穿孔社構 上述步驟A中,該些微孔槽之成型方式係為^射貫孔 或敍刻貫孔。 *上述步驟B中,該些金屬強化層之塗佈方式係為化學 氣相沈積法或電鍍法其中之一。 …、 鶴2 =獅t 為銅或 上述步驟C中,該石夕基板之薄化處理方式 化學機械拋光或電漿蝕刻其中之一。 ’、’、’、^ 上述第一開口之内捏係大於隸些第二開口之内徑。 上述微穿孔之深度係小於2Q微米。 上述相鄰微穿孔之中心軸ΐ離係小於6微米。 本發明具有下列之優點: 1.矽晶圓再利用:本發明可以使用再生 (Reclalmwa⑻作知基板,且不㈣;日 圓進订任何的CMP (化學機械拋光)處理,或者亦可使用 禮片(Dummy wafer)用少伙, 之夕日日圓作為矽基板,使矽晶圓 可回收再利用。 2.製作高密度之微穿孔陣列:本發明利用三維石夕穿 孔技術(m)可輕易得到微料級之微穿孔,且依照 099100048 表單編號Λ0101 苐4頁/共 ' k 0992000 201125072 ITRS Roadmap 2008, 2009年的技術已經可以將矽晶圓 的薄化做到20微米以下,且相鄰微穿孔之中心軸的距離 可以小於6微米,也就是微穿孔之第一開口及第二開口之 内徑可以在3微米以内,故可使微穿孔結構薄形化,並具 有高密度微穿孔之陣列。 3. 作為微型喷嘴或升壓結構使用:本發明利用TSV技 . 術成型微穿孔時,微穿孔内壁之傾斜角度(Side Wall201125072 VI. Description of the Invention: [Technical Field of the Invention] [0001] The present invention relates to a method for fabricating a micro-perforated structure by a three-dimensional stone etching technique (Tsv), particularly referring to a substrate by a TSV technology. It is formed into a micro-perforated structure having a plurality of micro-perforations for use in a micro-nozzle, a boosting structure or a filter sheet. [Prior Art] [0002] 〇 〇 〇 民 专利 128 128 128 128 128 128 128 128 128 128 128 128 128 128 128 128 128 128 128 128 128 128 128 128 128 128 128 128 128 128 128 128 128 128 128 128 128 128 128 128 128 128 128 128 128 128 128 I. Preparation steps '2 calendering step, 3. removing the mask step, 4. electroforming step, 5. removing the intermediate layer step 'by this' to have the above-mentioned respective convex or concave upper mold and The lower molds are combined to form a mold set, which is then used for injection by a plastic injection machine, thereby producing a precision plastic array micro-perforated sheet which can be applied to an ink jet printer, a biochip reagent or a fuel cell rectifying pore or In the related nanotechnology, at the same time, it can make the pores have a special geometric shape, and the convex portions and the concave portions can be accurately engaged with each other, thereby greatly reducing the procedure and time for repairing or correcting, but the disadvantages are: Micro-perforation aperture is too large: it is mainly used in nozzle sheets on inkjet printers, the micro-perforation diameter is 100 microns, the adjacent micro-perforation spacing is 100 to 200 microns, resulting in poor precision, can not It is used in applications such as micro-nozzles or booster structures that require smaller apertures, and the excessive aperture also results in their inability to be applied to filter sheets. SUMMARY OF THE INVENTION [0003] In order to be able to shape micro-perforations of smaller apertures, the present invention provides 099100048 Form No. A0101 Page 3 / Total 15 Pages 0992000134-0 201125072 A microscopic perforation technique (tsv) The method of perforating the structure is as follows: A. Forming a plurality of micro-well grooves on a substrate. The inner walls of the microporous grooves are respectively coated with a metal strengthening layer VIII. The enamel substrate is thinned, and the micropores 1 are respectively formed with a microperforation, and the microperforations respectively have a ' And a negative first opening and a first opening, so that the stone substrate becomes a micro-perforated structure. In the above step A, the micro-hole grooves are formed by a through hole or a through hole. * In the above step B, the coating of the metal strengthening layer is one of chemical vapor deposition or electroplating. ..., Crane 2 = Lion t is copper or the above-mentioned step C, the thinning treatment of the Shishi substrate is one of chemical mechanical polishing or plasma etching. ', ', ', ^ The inner opening of the first opening is larger than the inner diameter of the second opening. The depth of the above microperforations is less than 2Q microns. The central axis of the adjacent microperforations is less than 6 microns. The invention has the following advantages: 1. 矽 wafer reuse: the invention can use regeneration (Reclalmwa (8) for the substrate, and not (four); the yen to subscribe to any CMP (chemical mechanical polishing) treatment, or can also use the ritual ( Dummy wafer) uses the Japanese yen as the ruthenium substrate to make the enamel wafers recyclable. 2. Producing a high-density micro-perforation array: The present invention can easily obtain the micro-level using the three-dimensional shi ping technique (m). Micro-perforation, and according to 099100048 Form No. Λ0101 苐 4 pages / total 'k 0992000 201125072 ITRS Roadmap 2008, 2009 technology has been able to thin the enamel wafer below 20 microns, and the central axis of adjacent micro-perforations The distance can be less than 6 microns, that is, the first opening of the microperforation and the inner diameter of the second opening can be within 3 microns, so that the microperforated structure can be thinned and have an array of high density microperforations. Micro-nozzle or booster structure use: The present invention utilizes TSV technology to form the micro-perforation inner wall tilt angle (Side Wall)

Angle)精度要求較低,故微穿孔之第一開口可大於第二 開口,可降低生產成本,並藉由改變流體流入方向,而 ^ 可作為微型噴嘴或升壓結構使用。 4. 作為過濾薄片使用:本發明微穿孔之第一開口及 第二開口之内徑可以在3微米以下,故亦可作為過濾薄片 使用,而用於過濾一般空氣中粒徑較大之微塵粒子或黴 菌等雜質,可作為過濾裝置之第一道過濾程序,並可配 合具有更小穿孔之活性碳等過濾元件使用,增加過濾效 果,且因為事先濾除大顆粒雜質,亦減少活性碳過濾元 件因堵塞造成之耗損。 ❹ 【實施方式】 [0004] 首先,請參閱第一圖及第二圖所示,本發明係為一 種以三維矽穿孔技術(TSV)製作微穿孔結構之方法,步 驟如下: A.於一矽基板(1)上成型複數個微孔槽(11),且 根據該些微孔槽(11)所需的深寬比,可使用雷射貫孔 或蝕刻貫孔方式達成,而該矽基板(1)則可使用初始磊 晶完成之發晶棒經過切割後的梦晶圓’也就疋未處理後 099100048 續製程之初始矽晶圓,或者亦可以使用再生矽晶圓 表單編號A0101 第5頁/共15頁 0992000134-0 201125072 (Reclaim Wafer)作為該梦基板(i),且不需要對於 再生矽晶圓進行任何的CMP (化學機械拋光)處理,另外 ’作為檔片(Dummy wafer)使用之矽晶圓亦可以作為該 碎基板(1)之來源,使梦晶圓可充分回收再利用。 B. 於該些微孔槽(Π)之内壁分別塗佈一金屬強化 層(2),且該些金屬強化層(2)之塗佈方式可為化學 氣相沈積法或電鍍法其中之一。 C. 將該矽基板(1 )進行薄化處理,於該些微孔槽( 11)位置處分別構成一微穿孔(11a),該些微穿孔 (11a)並分別具有一相對之第一開口(Hla)及第二開口 (112a) ’使該矽基板(1)成為一微穿孔結構(la), 而該梦基板(1 )之薄化處理方式係為研磨、化學機械拋 光或電漿蝕刻其中之一。 另外,依據ITRS Roadmap 2008, 2009年的技術已 經可以將矽晶圓的薄化做到2〇微米以下,故以矽晶圓作 為該矽基板(1 )使用而成型該微穿孔結構(la )時可 使該微穿孔(11a)深度小於20¼米,且該些微穿孔( 11a)之中心轴的距離可以小於6微米,也就是該些微穿孔 (11a)之第一開口( iiia)及第二開口( U2a)之内 徑可以在3微米以内,故可在該微穿孔結構(la)上成型 高密度微穿孔(11a)之陣列。 晴參閱第三圖及第四圖所示’由於該些微穿孔(11& )内壁之傾斜角度(Side Wall Angle)精度要求較低 ’故該些微穿孔(11a)之第一開口(iiia)内徑可大於 第二開口(112a)内徑,當流體由該些微穿孔(lla)的 第二開口( 112a )流入,並由第一開口( ! ! i a )流出時 099100048 0992000134-0 表單編號A0101 第6頁/共15頁 201125072 ,根據流體於漸擴管内之流動原理,可具有微形喷嘴之 〇 〇 效果[請參閱第三圖],當流體由該些微穿孔(1 la)的第 一開口( 111 a )流入,並由第二開口( 11 2a )流出時, 根據流體於漸縮管内之流動原理,則可具有升壓結構之 效果[請參閱第四圖]’又由於當流體流入該微穿孔結構 (la)之微穿孔(11a)時,會對該些微穿孔(1 ia)之 内壁造成壓力,故上述步驟B中,該些金屬強化層(2) 之金屬材質可使用銅或鎢其中之一,亦或者其他可以使 該些微穿孔(11a)内壁承受更高應力之合金,使該些微 穿孔(11a)之内壁能承受流體更高之壓力。 請參閱第五圖所示,由於一般空氣中之黴菌或灰塵 等微塵粒子之大小約為幾十個微米,甚至超過微米[ 請參閱附件一]’故該微穿孔結構(la)亦可作為過濾薄 片,而配合濾除粒徑大於3微米以上之雜質(a),而僅 有粒徑小於3微米以下之微物質(B)可通過該微穿孔結 構(la )之微穿孔(1 la ),同時,並可配合具有更小穿 孔之活性碳等過遽為件使用,增加過濾效果,且因為事 先濾除大顆粒雜質(A),亦減少活性碳過濾元件因堵塞 造成之耗損。 [0005] 【圖式簡單說明】 第一圖係為本發明之步驟流程示意圖。 第二圖係為本發明之操作流程示意圖。 099100048 第二圖係為本發明作為微型喷嘴之使用示意圖。 第四圖係為本發明作為升壓結構之使用示意圖。 第五圖係為本發明作為過濾薄片之使用示意圖。 附件一係為各種顆粒尺寸比較表。 表單編號A0101 第7頁/共π百 ^ Κ 0992000134-0 201125072 【主要元件符號說明】 (11) 微孔槽 (11a) 微穿孔 (1 1 2 a )第二開口 (B ) 微物質 [0006] ( 1 ) 矽基板 (1 .a ) 微穿孔結構 (1 1 1 a )第一開口 (2) 金屬強化層 (A ) 雜質 0992000134-0 099100048 表單編號A0101 第8頁/共15頁Angle) has lower accuracy requirements, so the first opening of the microperforation can be larger than the second opening, which can reduce the production cost and can be used as a micro nozzle or boosting structure by changing the flow direction of the fluid. 4. Used as a filter sheet: the first opening and the second opening of the microperforation of the present invention can have an inner diameter of 3 micrometers or less, and can also be used as a filter sheet for filtering fine particles having a larger particle diameter in a general air. Or impurities such as mold, can be used as the first filtration program of the filter device, and can be used with filter elements such as activated carbon with smaller perforation to increase the filtration effect, and reduce the activated carbon filter element by filtering out large particle impurities in advance. Loss due to blockage. ❹ [Embodiment] [0004] First, referring to the first figure and the second figure, the present invention is a method for fabricating a micro-perforated structure by a three-dimensional boring technique (TSV), the steps are as follows: A. Forming a plurality of micro-hole grooves (11) on the substrate (1), and according to the required aspect ratio of the micro-hole grooves (11), the laser through-hole or etched through-hole method can be used, and the ruthenium substrate ( 1) The wafer that has been cut by the initial epitaxial wafer can be used. After the unfinished wafer, the initial wafer is processed, or the regenerated wafer form number A0101 can be used. / Total 15 pages 0992000134-0 201125072 (Reclaim Wafer) as the dream substrate (i), and does not require any CMP (Chemical Mechanical Polishing) treatment for the regenerated silicon wafer, and 'Use as a Dummy wafer The germanium wafer can also be used as a source of the broken substrate (1), so that the dream wafer can be fully recycled and reused. B. coating a metal strengthening layer (2) on the inner walls of the microporous grooves, and the metal strengthening layer (2) may be coated by one of chemical vapor deposition or electroplating. . C. The ruthenium substrate (1) is thinned, and a micro-perforation (11a) is formed at the positions of the micro-holes (11), and the micro-perforations (11a) respectively have a first opening ( Hla) and the second opening (112a) 'make the ruthenium substrate (1) into a micro-perforation structure (1), and the thinning treatment method of the dream substrate (1) is grinding, chemical mechanical polishing or plasma etching. one. In addition, according to ITRS Roadmap 2008, the technology of 2009 can make the thinning of germanium wafers to be less than 2 μm, so when the micro-perforated structure (la) is formed by using the germanium wafer as the germanium substrate (1) The microperforation (11a) may have a depth of less than 201⁄4 m, and the central axis of the microperforations (11a) may have a distance of less than 6 μm, that is, the first opening (iiia) and the second opening of the microperforations (11a) ( The inner diameter of U2a) can be within 3 microns, so an array of high density microperforations (11a) can be formed on the microperforated structure (la). As shown in the third and fourth figures, the inner diameter of the first opening (iiia) of the micro-perforations (11a) is required because the accuracy of the inner wall of the micro-perforations (11&) is lower. It may be larger than the inner diameter of the second opening (112a), when the fluid flows in from the second opening (112a) of the microperforations (lla) and flows out from the first opening (!! ia) 099100048 0992000134-0 Form No. A0101 No. 6 Page / Total 15 pages 201125072, according to the flow principle of the fluid in the diverging tube, may have the effect of the micro-nozzle [see the third figure], when the fluid is from the first opening of the micro-perforation (1 la) a) flowing in and flowing out of the second opening (11 2a ), depending on the flow principle of the fluid in the reducer, may have the effect of a boosting structure [see the fourth figure] and again due to the flow of fluid into the microperforation When the micro-perforation (11a) of the structure (la) causes pressure on the inner walls of the micro-perforations (1 ia), in the above step B, the metal material of the metal-reinforced layers (2) may use copper or tungsten. One, or other, can make the micro-perforations ( 11a) The inner wall is subjected to a higher stress alloy so that the inner walls of the microperforations (11a) can withstand higher pressures of the fluid. Please refer to the fifth figure. Since the size of fine dust particles such as mold or dust in the air is about several tens of micrometers or even more than micrometers [see Annex 1], the micro-perforated structure (la) can also be used as a filter. a thin sheet which is combined to filter out impurities (a) having a particle diameter of more than 3 μm, and only micro-substrate (B) having a particle diameter of less than 3 μm can pass through the microperforation (1 la ) of the micro-perforated structure (la), At the same time, it can be used in combination with activated carbon having a smaller perforation to increase the filtration effect, and the large-particle impurity (A) is filtered out in advance, and the loss of the activated carbon filter element due to clogging is also reduced. BRIEF DESCRIPTION OF THE DRAWINGS The first figure is a schematic flow chart of the steps of the present invention. The second figure is a schematic diagram of the operation flow of the present invention. 099100048 The second figure is a schematic view of the use of the invention as a micro nozzle. The fourth figure is a schematic diagram of the use of the present invention as a boosting structure. The fifth drawing is a schematic view of the use of the invention as a filter sheet. Annex I is a comparison table for various particle sizes. Form No. A0101 Page 7 / Total π 100 ^ Κ 0992000134-0 201125072 [Explanation of main component symbols] (11) Micro-hole groove (11a) Micro-perforation (1 1 2 a) second opening (B) Micro-material [0006] (1) 矽 substrate (1.a) micro-perforated structure (1 1 1 a) first opening (2) metal strengthening layer (A) impurity 0992000134-0 099100048 Form No. A0101 Page 8 of 15

Claims (1)

201125072 七、申請專利範圍: 1 種以三維矽穿孔技術(TSV)製作微穿孔結構之方法, 步驟如下: A. 於一矽基板上成型複數個微孔槽; B. 於該些微孔槽之内壁分別塗佈一金屬強化層; C. 將該矽基板進行薄化處理,於該些微孔槽位置處分 別構成一微穿孔,該些微穿孔並分別具有一相對之第一開 口及第二開口,使該矽基板成為一微穿孔結構。 2 .如申請專利範圍第1項所述之以三維矽穿孔技術(TSV) 〇 製作微穿孔結構之方法,其中步錄A中’該些微孔槽之成 型方式係為雷射貫孔或蝕刻貫孔。 3 .如申請專利範圍第1項所述之以三維矽穿孔钱術(TSv) 製作微穿孔結構之方法,其中步驟B中,該些金屬強化層 之塗佈方式係為化學氣相沈積法或電錄法其中之一。 4 .如申請專利範圍第1項所述之以三維石夕穿孔技術(TSV) 製作微穿孔結構之方法,其中步驟B中,該些金屬強化層 ^ 之金屬材質係為銅或鎢其中之一。 〇 5 .如申請專利範圍第1項所述之以三維矽穿孔技術(TSV) 製作微穿孔結構之方法,其中步驟C中,該矽基板之薄化 處理方式係為研磨、化學機械抛光或電漿姓刻其中之一。 6 .如申請專利範圍第1項所述之以三維矽穿孔技術(TSV) 製作微穿孔結構之方法’其中該些第一開口之内徑係大於 該些第二開口之内徑。 7 .如申請專利範圍第1項所述之以三維矽穿孔技術(TSV) 製作微穿孔結構之方法’其中該些微穿孔之深度係小於2〇 099100048 表單編號A0101 第9頁/共15頁 0992000134-0 201125072 微米。 8 .如申請專利範圍第1項所述之以三維矽穿孔技術(TSV) 製作微穿孔結構之方法,其中該些相鄰微穿孔之中心軸距 離係小於6微米。 099100048 表單編號A0101 第10頁/共15頁 0992000134-0201125072 VII. Patent application scope: 1 method for making micro-perforated structure by three-dimensional boring and perforating technology (TSV), the steps are as follows: A. forming a plurality of micro-hole grooves on a substrate; B. in the micro-hole grooves The inner wall is respectively coated with a metal strengthening layer; C. the enamel substrate is thinned, and a micro-perforation is formed at each of the micro-holes, and the micro-perforations respectively have a first opening and a second opening The germanium substrate is made into a micro-perforated structure. 2. A method of fabricating a micro-perforated structure by using a three-dimensional perforation technique (TSV) according to the first aspect of the patent application, wherein in the step A, the micropore grooves are formed by laser penetration or etching. Through hole. 3. The method for fabricating a micro-perforated structure by using three-dimensional perforated perforation (TSv) according to claim 1, wherein in step B, the metal strengthening layer is coated by chemical vapor deposition or One of the electric recording methods. 4. The method of fabricating a micro-perforated structure by a three-dimensional stone-etching technique (TSV) according to claim 1, wherein in step B, the metal material of the metal strengthening layer is one of copper or tungsten. . 〇5. The method for fabricating a micro-perforated structure by a three-dimensional boring and perforating technique (TSV) according to claim 1, wherein in the step C, the thinning treatment of the ruthenium substrate is grinding, chemical mechanical polishing or electric The pulp surname is one of them. 6. The method of fabricating a microperforated structure by a three-dimensional perforation technique (TSV) as described in claim 1, wherein the first openings have an inner diameter greater than an inner diameter of the second openings. 7. A method of fabricating a micro-perforated structure by a three-dimensional boring technique (TSV) as described in claim 1, wherein the depth of the micro-perforations is less than 2〇099100048. Form number A0101 page 9/15 pages 0992000134- 0 201125072 microns. 8. A method of making a microperforated structure by three-dimensional perforation technique (TSV) as described in claim 1, wherein the adjacent microperforations have a central axis distance of less than 6 microns. 099100048 Form number A0101 Page 10 of 15 0992000134-0
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US7030481B2 (en) * 2002-12-09 2006-04-18 Internation Business Machines Corporation High density chip carrier with integrated passive devices
US7691747B2 (en) * 2007-11-29 2010-04-06 STATS ChipPAC, Ltd Semiconductor device and method for forming passive circuit elements with through silicon vias to backside interconnect structures

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115376937A (en) * 2022-10-26 2022-11-22 合肥新晶集成电路有限公司 Semiconductor structure and preparation method thereof
CN115376937B (en) * 2022-10-26 2023-02-21 合肥新晶集成电路有限公司 Semiconductor structure and preparation method thereof

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