TWI423390B - The method of making microperforated structure by three-dimensional silicon perforation technique (TSV) and its microperforated structure for micro-nozzle, step-up structure and filter sheet - Google Patents

The method of making microperforated structure by three-dimensional silicon perforation technique (TSV) and its microperforated structure for micro-nozzle, step-up structure and filter sheet Download PDF

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TWI423390B
TWI423390B TW99100048A TW99100048A TWI423390B TW I423390 B TWI423390 B TW I423390B TW 99100048 A TW99100048 A TW 99100048A TW 99100048 A TW99100048 A TW 99100048A TW I423390 B TWI423390 B TW I423390B
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TW201125072A (en
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Jing Jou Tang
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Univ Southern Taiwan
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以三維矽穿孔技術(TSV)製作微穿孔結構之方法及將其製成之微穿孔結構用於微型噴嘴、升壓結構及過濾薄片之用途 Method for fabricating a micro-perforated structure by three-dimensional perforation technology (TSV) and use of the microperforated structure thereof for micro nozzles, boosting structures and filter sheets

本發明係有關於一種以三維矽穿孔技術(TSV)製作微穿孔結構之方法及將其製成之微穿孔結構用於微型噴嘴、升壓結構及過濾薄片之用途,特別是指藉由TSV技術將矽基板成型為具有複數微穿孔之微穿孔結構,而使用於微型噴嘴、升壓結構或者過濾薄片。 The present invention relates to a method for fabricating a microperforated structure by a three-dimensional perforation technique (TSV) and a microperforated structure made thereof for use in a micro nozzle, a boosting structure and a filter sheet, in particular, by TSV technology The tantalum substrate is formed into a microperforated structure having a plurality of microperforations for use in a micro nozzle, a boosting structure or a filter sheet.

中華民國專利第I282325號「精密塑膠陣列式微穿孔薄片之製造方法」,以製造出一上模及一下模,此上模及下模係分別由下列步驟製成:1.準備步驟、2. X光曝光步驟、3.去除光罩步驟、4.電鑄成型步驟、5.去除中間層步驟,藉此,將上述之分別具有預定凸部或凹部之上模及下模對合而成為一模具組,再用供一塑膠射出機射出,進而可製造出一精密塑膠陣列式微穿孔薄片,可應用於噴墨印表機、生物晶片試劑或燃料電池整流細孔或相關的奈米科技上,同時,其可使細孔具有特殊之幾何形狀,以及其凸部及凹部彼此可精確對合卡入,大幅減少修模或校正之手續及時間,然其缺點在 於:微穿孔孔徑過大:其主要應用於噴墨印表機上之噴嘴薄片,其微穿孔直徑為100微米,相鄰微穿孔間距為100至200微米,造成其精密度不佳,無法應用於需要更小孔徑之微型噴嘴或升壓結構等用途,且孔徑過大亦造成其無法應用於過濾薄片之用途。 The Republic of China Patent No. I282325 "Manufacturing Method of Precision Plastic Array Micro-Perforated Sheet" to produce an upper mold and a lower mold, respectively, which are made by the following steps: 1. Preparation steps, 2. X a light exposure step, 3. a mask removal step, 4. an electroforming step, and a step of removing the intermediate layer, whereby the above-mentioned molds having the predetermined convex portion or the concave portion and the lower mold are respectively combined to form a mold The group is then used for injection by a plastic injection machine to produce a precision plastic array micro-perforated sheet that can be applied to inkjet printers, biochip reagents or fuel cell rectifying pores or related nanotechnology. , which can make the pores have a special geometric shape, and the convex portions and the concave portions can be accurately engaged with each other, thereby greatly reducing the procedure and time for repairing or correcting, but the disadvantages thereof are Yu: The micro-perforation aperture is too large: it is mainly applied to nozzle sheets on inkjet printers. The micro-perforation diameter is 100 micrometers, and the adjacent micro-perforations are 100 to 200 micrometers apart, which results in poor precision and cannot be applied. Applications such as micro-nozzles or booster structures with smaller apertures are required, and the excessive aperture also results in their inability to be applied to filter sheets.

爰此,為能成型更小孔徑之微穿孔,故本發明提供一種以三維矽穿孔技術(TSV)製作微穿孔結構之方法,步驟如下: Thus, in order to be able to form micro-perforations with smaller apertures, the present invention provides a method for fabricating micro-perforated structures by three-dimensional perforation technology (TSV), the steps are as follows:

A.於一矽基板上成型複數個微孔槽。 A. Forming a plurality of microwell grooves on a substrate.

B.於該些微孔槽之內壁分別塗佈一金屬強化層。 B. Applying a metal strengthening layer to the inner walls of the microporous grooves.

C.將該矽基板進行薄化處理,於該些微孔槽位置處分別構成一微穿孔,該些微穿孔並分別具有一相對之第一開口及第二開口,使該矽基板成為一微穿孔結構。 C. The ruthenium substrate is thinned, and a micro-perforation is formed at each of the micro-holes, and the micro-perforations respectively have a first opening and a second opening, so that the 矽 substrate becomes a micro-perforation structure.

上述步驟A中,該些微孔槽之成型方式係為雷射貫孔或蝕刻貫孔。 In the above step A, the micropore grooves are formed by a laser through hole or an etched through hole.

上述步驟B中,該些金屬強化層之塗佈方式係為化學氣相沈積法或電鍍法其中之一。 In the above step B, the coating method of the metal strengthening layer is one of chemical vapor deposition or electroplating.

上述步驟B中,該些金屬強化層之金屬材質係為銅或鎢其中之一。 In the above step B, the metal material of the metal strengthening layer is one of copper or tungsten.

上述步驟C中,該矽基板之薄化處理方式係為研磨、化學機械拋光或電漿蝕刻其中之一。 In the above step C, the thinning treatment of the tantalum substrate is one of grinding, chemical mechanical polishing or plasma etching.

上述第一開口之內徑係大於該些第二開口之內徑。 The inner diameter of the first opening is greater than the inner diameter of the second openings.

上述微穿孔之深度係小於20微米。 The depth of the above microperforations is less than 20 microns.

上述相鄰微穿孔之中心軸距離係小於6微米。 The central axis distance of the adjacent microperforations is less than 6 microns.

本發明進一步提供一種將前述以三維矽穿孔技術(TSV)製作微穿孔結構之方法所製成之微穿孔結構用於微型噴嘴之用途,其中前述微穿孔之第一開口內徑大於第二開口內徑,使一流體由前述微穿孔的第二開口流入,並由第一開口流出,而作為微型噴嘴之用途。 The present invention further provides a micro-perforation structure prepared by the method for fabricating a micro-perforated structure by a three-dimensional boring technique (TSV) for use in a micro-nozzle, wherein the inner diameter of the first opening of the micro-perforation is larger than that in the second opening The diameter is such that a fluid flows in from the second opening of the microperforation and flows out of the first opening for use as a micro-nozzle.

本發明進一步提供一種將前述以三維矽穿孔技術(TSV)製作微穿孔結構之方法所製成之微穿孔結構用於升壓結構之用途,其中前述微穿孔之第一開口內徑大於第二開口內徑,使一流體由前述微穿孔的第一開口流入,並由第二開口流出,而作為升壓結構之用途。 The present invention further provides a use of the microperforation structure prepared by the method for fabricating a microperforated structure by a three-dimensional perforation technique (TSV) for a boosting structure, wherein the first opening of the microperforation has an inner diameter larger than the second opening. The inner diameter causes a fluid to flow from the first opening of the microperforation and flow out of the second opening for use as a boosting structure.

本發明進一步提供一種將前述以三維矽穿孔技術(TSV)製作微穿孔結構之方法所製成之微穿孔結構用於過濾薄片之用途,用以濾除粒徑大於3微米以上之雜質。 The present invention further provides a use of the microperforated structure prepared by the method for fabricating a microperforated structure by a three-dimensional perforation technique (TSV) for filtering a sheet for filtering impurities having a particle diameter of more than 3 μm.

進一步,可將前述作為過濾薄片用途之微穿孔結構結合一活性碳。 Further, the aforementioned microperforated structure used as a filter sheet can be combined with an activated carbon.

本發明具有下列之優點: The invention has the following advantages:

1.矽晶圓再利用:本發明可以使用再生矽晶圓(Reclaim Wafer)作為矽基板,且不需要對於再生矽晶圓進行任何的CMP(化學機械拋光)處理,或者亦可使用檔片(Dummy wafer)用之矽晶圓作為矽基板,使矽晶圓可回收再利用。 1. 矽 Wafer Reuse: The present invention can use Reclaim Wafer as a ruthenium substrate, and does not require any CMP (Chemical Mechanical Polishing) treatment for the regenerated ruthenium wafer, or can also use a slab ( Dummy wafer) uses the wafer as a germanium substrate to make the germanium wafer recyclable.

2.製作高密度之微穿孔陣列:本發明利用三維矽穿孔技術(TSV)可輕易得到微米等級之微穿孔,且依照ITRS Roadmap 2008,2009年的技術已經可以將矽晶圓的薄化做到20微米以下,且相鄰微穿孔之中心軸的距離可以小於6微米,也就是微穿孔之第一開口及第二開口之內徑可以在3微米以內,故可使微穿孔結構薄形化,並具有高密度微穿孔之陣列。 2. Making high-density micro-perforation arrays: The present invention can easily obtain micro-scale micro-perforations by using three-dimensional perforation technology (TSV), and according to the technology of ITRS Roadmap 2008, 2009, the thinning of germanium wafers can be achieved. Below 20 microns, and the distance between the central axes of adjacent microperforations may be less than 6 microns, that is, the inner diameters of the first openings and the second openings of the microperforations may be within 3 microns, so that the microperforation structure can be thinned. And has an array of high density microperforations.

3.作為微型噴嘴或升壓結構使用:本發明利用TSV技術成型微穿孔時,微穿孔內壁之傾斜角度(Side Wall Angle)精度要求較低,故微穿孔之第一開口可大於第二開口,可降低生產成本,並藉由改變流體流入方向,而可作為微型噴嘴或升壓結構使用。 3. Use as a micro-nozzle or booster structure: When the micro-perforation is formed by the TSV technology, the accuracy of the depth of the inner wall of the micro-perforation is lower, so the first opening of the micro-perforation can be larger than the second opening. It can reduce production costs and can be used as a micro-nozzle or booster structure by changing the direction of fluid inflow.

4.作為過濾薄片使用:本發明微穿孔之第一開口及第二開口之內徑可以在3微米以下,故亦可作為過濾薄片使用,而用於過濾一般空氣中粒徑較大之微塵粒子或黴菌等雜質,可作為過濾裝置之第一道過濾程序,並可配合具有更小穿孔之活性碳等過濾元件使用,增加過濾效果,且因為事先濾除大顆粒雜質,亦減少活性碳過濾元件因堵塞造成之耗損。 4. Used as a filter sheet: the first opening and the second opening of the microperforation of the present invention can have an inner diameter of less than 3 microns, so that it can also be used as a filter sheet, and is used for filtering fine dust particles having a large particle size in general air. Or impurities such as mold, can be used as the first filtration program of the filter device, and can be used with filter elements such as activated carbon with smaller perforation to increase the filtration effect, and reduce the activated carbon filter element by filtering out large particle impurities in advance. Loss due to blockage.

(1)‧‧‧矽基板 (1) ‧ ‧ 矽 substrate

(11)‧‧‧微孔槽 (11)‧‧‧Microwell

(1a)‧‧‧微穿孔結構 (1a)‧‧‧Microperforated structure

(11a)‧‧‧微穿孔 (11a)‧‧‧Microperforation

(111a)‧‧‧第一開口 (111a) ‧ ‧ first opening

(112a)‧‧‧第二開口 (112a) ‧ ‧ second opening

(2)‧‧‧金屬強化層 (2) ‧‧‧ metal strengthening layer

(A)‧‧‧雜質 (A) ‧ ‧ impurities

(B)‧‧‧微物質 (B) ‧‧‧Micro-substances

第一圖係為本發明之步驟流程示意圖。 The first figure is a schematic diagram of the steps of the present invention.

第二圖係為本發明之操作流程示意圖。 The second figure is a schematic diagram of the operation flow of the present invention.

第三圖係為本發明作為微型噴嘴之使用示意圖。 The third figure is a schematic view of the use of the invention as a micro nozzle.

第四圖係為本發明作為升壓結構之使用示意圖。 The fourth figure is a schematic diagram of the use of the present invention as a boosting structure.

第五圖係為本發明作為過濾薄片之使用示意圖。 The fifth drawing is a schematic view of the use of the invention as a filter sheet.

附件一係為各種顆粒尺寸比較表。 Annex I is a comparison table for various particle sizes.

首先,請參閱第一圖及第二圖所示,本發明係為一種以三維矽穿孔技術(TSV)製作微穿孔結構之方法及將其製成之微穿孔結構用於微型噴嘴、升壓結構及過濾薄片之用途,步驟如下: First, referring to the first figure and the second figure, the present invention is a method for fabricating a micro-perforated structure by a three-dimensional boring and perforating technique (TSV) and a micro-perforated structure made thereof for a micro nozzle and a boosting structure. And the use of the filter sheet, the steps are as follows:

A.於一矽基板(1)上成型複數個微孔槽(11),且根據該些微孔槽(11)所需的深寬比,可使用雷射貫孔或蝕刻貫孔方式達成,而該矽基板(1)則可使用初始磊晶完成之矽晶棒經過切割後的矽晶圓,也就是未處理後續製程之初始矽晶圓,或者亦可以使用再生矽晶圓(Reclaim Wafer)作為該矽基板(1),且不需要對於再生矽晶圓進行任何的CMP(化學機械拋光)處理,另外,作為檔片(Dummy wafer)使用之矽晶圓亦可以作為該矽基板(1)之來源,使矽晶圓可充分回收再利用。 A. forming a plurality of micro-holes (11) on a substrate (1), and according to the required aspect ratio of the micro-holes (11), it can be achieved by using a laser through hole or an etched through hole. The ruthenium substrate (1) can use the etched ruthenium wafer after the initial epitaxy, that is, the initial ruthenium wafer of the unprocessed subsequent process, or the Reclaim Wafer can also be used. As the germanium substrate (1), it is not necessary to perform any CMP (Chemical Mechanical Polishing) treatment on the recycled germanium wafer, and a germanium wafer used as a dummy wafer can also be used as the germanium substrate (1). The source of the wafer allows the wafer to be fully recycled.

B.於該些微孔槽(11)之內壁分別塗佈一金屬強化層(2),且該些金屬強化層(2)之塗佈方式可為化學氣相沈積法或電鍍法其中之一。 B. coating a metal strengthening layer (2) on the inner walls of the microporous grooves (11), and the metal strengthening layer (2) may be coated by chemical vapor deposition or electroplating. One.

C.將該矽基板(1)進行薄化處理,於該些微孔槽(11)位置處分別構成一微穿孔(11a),該些微穿孔(11a)並分別具有一相對之第一開口(111a)及第二開口(112a),使該矽基板(1)成為一微穿孔結構(1a),而該矽基板(1)之薄化處理方式係為研磨、化學機械拋光或電漿蝕刻其中之一。 C. The ruthenium substrate (1) is thinned, and a micro-perforation (11a) is formed at the positions of the micro-holes (11), and the micro-perforations (11a) respectively have a first opening ( 111a) and the second opening (112a), the germanium substrate (1) is a micro-perforated structure (1a), and the thinning treatment of the germanium substrate (1) is grinding, chemical mechanical polishing or plasma etching. one.

另外,依據ITRS Roadmap 2008,2009年的技術已經可以將矽晶圓的薄化做到20微米以下,故以矽晶圓作為該矽基板(1)使用而成型該微穿孔結構(1a)時,可使該微穿孔(11a)深度小於20微米,且該些微穿孔(11a)之中心軸的距離可以小於6微米,也就是該些微穿孔(11a)之第一開口(111a)及第二開口(112a)之內徑可以在3微米以內,故可在該微穿孔結構(1a)上成型高密度微穿孔(11a)之陣列。 In addition, according to ITRS Roadmap 2008, the technology of 2009 can make the thinning of germanium wafers to be less than 20 micrometers. Therefore, when the micro-perforated structure (1a) is formed by using a germanium wafer as the germanium substrate (1), The micro-perforations (11a) may have a depth of less than 20 micrometers, and the central axes of the micro-perforations (11a) may have a distance of less than 6 micrometers, that is, the first openings (111a) and the second openings of the micro-perforations (11a) ( The inner diameter of 112a) can be within 3 microns, so an array of high density microperforations (11a) can be formed on the microperforated structure (1a).

請參閱第三圖及第四圖所示,由於該些微穿孔(11a)內壁之傾斜角度(Side Wall Angle)精度要求較低,故該些微穿孔(11a)之第一開口(111a)內徑可大於第二開口(112a)內徑,當流體由該些微穿孔(11a)的第二開口(112a)流入,並由第一開口(111a)流出時,根據流體於漸擴管內之流動原理,可具有微形噴嘴之效果[請參閱第三圖],當流體由該些微穿孔(11a)的第一開口(111a)流入,並由第二開口(112a)流出時,根據流體於漸縮管內之流動原理,則可具有升壓結構之效果[請參閱第四圖],又由於 當流體流入該微穿孔結構(1a)之微穿孔(11a)時,會對該些微穿孔(11a)之內壁造成壓力,故上述步驟B中,該些金屬強化層(2)之金屬材質可使用銅或鎢其中之一,亦或者其他可以使該些微穿孔(11a)內壁承受更高應力之合金,使該些微穿孔(11a)之內壁能承受流體更高之壓力。 Referring to the third and fourth figures, the inner diameter of the first opening (111a) of the micro-perforations (11a) is required because the accuracy of the inner wall angle of the micro-perforations (11a) is low. It may be larger than the inner diameter of the second opening (112a), when the fluid flows in from the second opening (112a) of the micro-perforations (11a) and flows out from the first opening (111a), according to the flow principle of the fluid in the diverging tube , may have the effect of a micro-nozzle [please refer to the third figure], when the fluid flows in from the first opening (111a) of the micro-perforations (11a) and flows out from the second opening (112a), according to the fluid in the tapering The flow principle inside the tube can have the effect of the boost structure [see the fourth picture], and When the fluid flows into the micro-perforation (11a) of the micro-perforated structure (1a), the inner wall of the micro-perforation (11a) is pressed, so in the above step B, the metal material of the metal-reinforced layer (2) can be The use of one of copper or tungsten, or other alloys which can subject the inner walls of the microperforations (11a) to higher stresses, allows the inner walls of the microperforations (11a) to withstand higher pressures of the fluid.

請參閱第五圖所示,由於一般空氣中之黴菌或灰塵等微塵粒子之大小約為幾十個微米,甚至超過100微米[請參閱附件一],故該微穿孔結構(1a)亦可作為過濾薄片,而配合濾除粒徑大於3微米以上之雜質(A),而僅有粒徑小於3微米以下之微物質(B)可通過該微穿孔結構(1a)之微穿孔(11a),同時,並可配合具有更小穿孔之活性碳等過濾元件使用,增加過濾效果,且因為事先濾除大顆粒雜質(A),亦減少活性碳過濾元件因堵塞造成之耗損。 Please refer to the fifth figure. Since the size of fine dust particles such as mold or dust in the air is about several tens of micrometers or even more than 100 micrometers [see Annex I], the micro-perforated structure (1a) can also be used. Filtering the flakes to filter out impurities (A) having a particle diameter of more than 3 μm, and only the micro-substrate (B) having a particle diameter of less than 3 μm can pass through the microperforations (11a) of the micro-perforated structure (1a). At the same time, it can be used with a filter element such as activated carbon having a smaller perforation to increase the filtration effect, and also reduce the loss of the activated carbon filter element due to clogging because the large particle impurity (A) is filtered out in advance.

Claims (12)

一種以三維矽穿孔技術(TSV)製作微穿孔結構之方法,步驟如下:A.於一矽基板上成型複數個微孔槽;B.於該些微孔槽之內壁分別塗佈一金屬強化層;C.將該矽基板進行薄化處理,於該些微孔槽位置處分別構成一微穿孔,該些微穿孔並分別具有一相對之第一開口及第二開口,使該矽基板成為一微穿孔結構,該微穿孔結構為微型噴嘴、升壓結構或者過濾薄片。 A method for fabricating a micro-perforated structure by using a three-dimensional perforation technique (TSV) is as follows: A. forming a plurality of micro-hole grooves on a substrate; B. coating a metal reinforcement on the inner walls of the micro-hole grooves a layer of micro-perforations, wherein the micro-perforations respectively have a first opening and a second opening, so that the germanium substrate becomes a A microperforated structure is a micro-nozzle, a boosting structure or a filter sheet. 如申請專利範圍第1項所述之以三維矽穿孔技術(TSV)製作微穿孔結構之方法,其中步驟A中,該些微孔槽之成型方式係為雷射貫孔或蝕刻貫孔。 The method for fabricating a micro-perforated structure by using a three-dimensional boring and perforating technique (TSV) according to the first aspect of the patent application, wherein in the step A, the micro-hole grooves are formed by a laser through hole or a etched through hole. 如申請專利範圍第1項所述之以三維矽穿孔技術(TSV)製作微穿孔結構之方法,其中步驟B中,該些金屬強化層之塗佈方式係為化學氣相沈積法或電鍍法其中之一。 The method for fabricating a micro-perforated structure by using a three-dimensional boring and perforating technique (TSV) according to the first aspect of the patent application, wherein in the step B, the metal strengthening layer is coated by a chemical vapor deposition method or a plating method. one. 如申請專利範圍第1項所述之以三維矽穿孔技術(TSV)製作微穿孔結構之方法,其中步驟B中,該些金屬強化層之金屬材質係為銅或鎢其中之一。 The method for fabricating a micro-perforated structure by a three-dimensional boring and perforating technique (TSV) according to the first aspect of the invention, wherein in the step B, the metal material of the metal reinforced layer is one of copper or tungsten. 如申請專利範圍第1項所述之以三維矽穿孔技術(TSV)製作微穿孔結構之方法,其中步驟C中,該矽基板之薄化處理方式係為研磨、化學機械拋光或電漿蝕刻其中之一。 The method for fabricating a micro-perforated structure by using a three-dimensional boring and perforating technique (TSV) as described in claim 1, wherein in the step C, the thinning treatment of the ruthenium substrate is grinding, chemical mechanical polishing or plasma etching. one. 如申請專利範圍第1項所述之以三維矽穿孔技術(TSV)製作 微穿孔結構之方法,其中該些第一開口之內徑係大於該些第二開口之內徑。 As described in the first paragraph of the patent application, it is made by three-dimensional perforation technology (TSV). The method of micro-perforating structure, wherein the inner diameters of the first openings are larger than the inner diameters of the second openings. 如申請專利範圍第1項所述之以三維矽穿孔技術(TSV)製作微穿孔結構之方法,其中該些微穿孔之深度係小於20微米。 A method of fabricating a microperforated structure by a three-dimensional perforation technique (TSV) as described in claim 1, wherein the microperforations have a depth of less than 20 microns. 如申請專利範圍第1項所述之以三維矽穿孔技術(TSV)製作微穿孔結構之方法,其中該些相鄰微穿孔之中心軸距離係小於6微米。 A method of fabricating a microperforated structure by a three-dimensional perforation technique (TSV) as described in claim 1, wherein the adjacent microperforations have a central axis distance of less than 6 micrometers. 一種將如申請專利範圍第1項所述之以三維矽穿孔技術(TSV)製作微穿孔結構之方法製成之微穿孔結構作為微型噴嘴之用途,其中前述微穿孔之第一開口內徑大於第二開口內徑,使一流體由前述微穿孔的第二開口流入,並由第一開口流出,而作為微型噴嘴之用途。 A microperforation structure prepared by a method of fabricating a microperforated structure by a three-dimensional perforation technique (TSV) according to claim 1 of the patent application, wherein the first opening of the microperforation has an inner diameter larger than that of the first The inner diameter of the opening is such that a fluid flows in from the second opening of the microperforation and flows out of the first opening for use as a micro nozzle. 一種將如申請專利範圍第1項所述之以三維矽穿孔技術(TSV)製作微穿孔結構之方法製成之微穿孔結構作為升壓結構之用途,其中前述微穿孔之第一開口內徑大於第二開口內徑,使一流體由前述微穿孔的第一開口流入,並由第二開口流出,而作為升壓結構之用途。 A microperforation structure made by a method of fabricating a microperforated structure by a three-dimensional perforation technique (TSV) according to claim 1 of the patent application, wherein the first opening of the microperforation has an inner diameter greater than The inner diameter of the second opening allows a fluid to flow from the first opening of the microperforation and flow out through the second opening for use as a boosting structure. 一種將如申請專利範圍第1項所述之以三維矽穿孔技術(TSV)製作微穿孔結構之方法製成之微穿孔結構作為過濾薄片之用途,用以濾除粒徑大於3微米以上之雜質。 A microperforation structure prepared by a method of manufacturing a microperforated structure by a three-dimensional perforation technique (TSV) according to the first aspect of the patent application as a filter sheet for filtering impurities having a particle diameter of more than 3 micrometers or more . 如申請專利範圍第11項所述之將以三維矽穿孔技術(TSV)製作微穿孔結構之方法製成之微穿孔結構作為過濾薄片之用途,進一步將前述微穿孔結構結合一活性碳。 The microperforated structure prepared by the method of fabricating a microperforated structure by a three-dimensional perforation technique (TSV) is used as a filter sheet as described in claim 11, and the microperforated structure is further bonded to an activated carbon.
TW99100048A 2010-01-05 2010-01-05 The method of making microperforated structure by three-dimensional silicon perforation technique (TSV) and its microperforated structure for micro-nozzle, step-up structure and filter sheet TWI423390B (en)

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US20040108587A1 (en) * 2002-12-09 2004-06-10 Chudzik Michael Patrick High density chip carrier with integrated passive devices
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US20040108587A1 (en) * 2002-12-09 2004-06-10 Chudzik Michael Patrick High density chip carrier with integrated passive devices
TW200924092A (en) * 2007-11-29 2009-06-01 Stats Chippac Ltd Semiconductor device and method for forming passive curcuit elements with through silicon vias to backside interconnect structures

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