TW201120061A - Low-dielectric imprinting material - Google Patents

Abstract

Provided is an imprinting material that forms a low dielectric constant film with a high transmittance and a high refractive index. The imprinting material comprises a component (A), a component (B), and a component (C), and contains 50 to 95 parts by mass of component (A) and 5 to 50 parts by mass of component (B) each per a total of 100 parts by mass of the aforementioned component (A) and the aforementioned component (B). Component (A): a compound having a bis(aryl)fluorene skeleton, that is represented by the formula (1); component (B): a compound having at least one polymerizable group therein; component (C): a photopolymerization initiator (In the formula, R represents an acryloyl group, a (meta)acryloyl group, or a vinyl group; A represents an alkylene group; m and n both independently represent an integer in the range from 0 to 3.)

Description

201120061 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to an imprint material and a transfer-transferred film made of the material. More specifically, it relates to an imprint material which forms a film having a high transmittance and a high refractive index and a low dielectric constant film, and a film which is patterned by the material. [Prior Art] In 1995, Professor Joe of Princeton University and others advocated the new technology of so-called nanoimprint lithography (patent literature). Nanoimprint lithography is to contact a mold having an arbitrary pattern with a substrate on which a resin film is formed and pressurizing the resin film while using heat or light as an external stimulus to form the resin which hardens the target pattern. Membrane Technology: This nanoimprint lithography has the advantage of simple and low-cost nano-level processing properties when compared with conventional photolithography for manufacturing semiconductor devices. Further, nanoimprint lithography is expected to replace photolithography and is suitable for use in the manufacture of semiconductor devices, optical devices, display devices, memory media, biochips, and the like. From this, it is known that various reports on the curable composition for photon nanoimprint lithography used in nanoimprint lithography have been proposed (Patent Documents 2 and 3). However, until now, various materials (hereinafter referred to as "imprint materials") used as nanoimprint lithography have been disclosed, but no semiconductors suitable for or suitable for use in electric field effect transistors have been reported. Interlayer insulating film and/or gate insulating film of the element, and material of the optical member-5-201120061 'Specifically, a nanoimprint material having a film having a low dielectric constant, a high transmittance, and a high refractive index is formed. Next, 'the compound having an anthracene skeleton is conventionally used as one of the materials for forming an optical member'. For example, when a surface uneven shape is formed on a substrate, a resin containing a monomer or an oligomer having an anthracene skeleton is formed. A coating material having a transmittance of a photopolymerization initiator of 60% or more (Patent Documents 4 to 6). However, in these conventional documents, not only the use as an imprint material but also a compound having a bisaryl fluorene skeleton is not taught as an imprint material. Further, it has been reported that a cross-linking property or a polymer composition for injection molding is used in the production of an optical article having a high refractive index as a monomer using ruthenium diacrylate (Patent Document 7). However, the polymer having a ruthenium structure reported in this document is described as having an excellent property in terms of refractive index, thermal stability, abrasion resistance, and impact resistance, and there is no teaching in this document regarding the assignment. The polymer has a low dielectric constant property. In addition, it has been developed to use the polymer composition for the purpose of producing a plastic optical article such as a video recorder or an ophthalmic lens which must have a high refractive index, but does not necessarily have to have a low dielectric constant. Any possibility that the composition is suitable for use in semiconductor components, in particular imprinted materials. [Patent Document 1] [Patent Document 1] US Pat. No. 5,772,905 [Patent Document 2] Japanese Patent Laid-Open No. 2008-1 0541 No. 201120061 [Patent Document 3] Japanese Patent Laid-Open No. 2〇〇8_2〇 [Patent Document 4] Japanese Patent Laid-Open Publication No. JP-A No. 2002-182017 [Patent Document 5] Japanese Patent Laid-Open Publication No. 2003-5368 [Patent Document] Japanese Patent Application Laid-Open No. Hei 7-2939. SUMMARY OF THE INVENTION The present invention has been made in view of the foregoing circumstances, and an object of the present invention is to provide an imprint material which forms a low dielectric constant film having high transmittance and high refractive index, and is provided by A film on which a pattern is transferred by the material. Here, as described above, an object of the present invention is to provide an imprint material which forms a film having high transmittance, high refractive index and low dielectric constant. Specifically, regarding the transmittance, for example, for the purpose of providing a material for forming a film having a high transmittance of 95% or more, preferably 98% or more, the refractive index is, for example, provided to have a formation of 1.57 or more, preferably 1.60. The above-mentioned material of the high refractive index film is intended for the purpose of providing a material having a low dielectric constant of 2.0 or more, preferably 3.0 or less, for example. In other words, the present invention is characterized in that an imprint material for forming a film having properties satisfying various characteristics such as total transmittance, refractive index, and dielectric constant is provided, and the pattern size formed in the present specification is not affected by the nanometer level. For example, a photon imprinting technique containing a micron scale is called photoimprint processing. Further, the "dielectric constant" in the present specification means a specific dielectric constant. In order to solve the above-mentioned problem, the inventors of the present invention have found that a monomer having a compound having a bisaryl fluorene skeleton can impart a low dielectric constant to a film containing the compound. this invention. In other words, the present invention relates to an imprint material characterized by containing (A) component, (B) component, and (C) component, and having a total mass of the above components (a) and (B). Each component contains 5 to 95 parts by mass of the component (A) and 50 to 5 parts by mass of the component (B). (A) Component: a compound (B) having a bisaryl fluorene skeleton represented by the following formula (1): a compound having at least one polymerizable group in a molecule (C) component: a photopolymerization initiator 1]

(In the formula, R represents an acrylonitrile group, a methacryloyl group or a vinyl group, A represents an alkylene group, and m and η each independently represent an integer of 〇3). [Effect of the Invention] In the present invention, since a film having a low dielectric constant of a bisaryl fluorene skeleton is contained in an imprint material, a film having a pattern formed by the imprint material has a low dielectric constant and a high permeation. Rate and High Refractive Index" 201120061 The embossing material of the present invention can be subjected to photohardening treatment, and since the cured film does not cause partial pattern peeling when the mold is peeled off, a film having a desired pattern can be formed correctly. Moreover, a good photolithographic pattern can be formed. Further, the imprint material of the present invention can be formed on any substrate, and a film having a pattern formed by imprinting can be transferred, and it can be suitably used not only for an optical member but also for an electric field effect transistor or the like. An interlayer insulating film and/or a gate insulating film of a semiconductor element. Further, the imprint material of the present invention can control the curing rate, the dynamic viscosity, and the film thickness by changing the kind of the compound having at least two polymerizable groups in the molecule. Further, the imprint material of the present invention can be designed to correspond to the type of the device to be manufactured, the type of the exposure process and the firing process, and can be used for the production of optical members because the process range can be expanded. [In order to carry out the invention] The present invention is characterized in that a monomer having a bisaryl fluorene skeleton is used, and a film formed of an imprint material containing the material has a low dielectric constant. In other words, the present invention relates to a pressure of a photopolymerization initiator containing a compound having a bisaryl fluorene skeleton as the component (A), a compound having at least one polymerizable group in the molecule, and a component (C) component of the component (C). Printed material. Further, an imprint material which may contain a solvent of the component (D) in addition to the components (A), (B) and (C). The respective components are described in detail below. <:: -9-201120061 <(A) component> The compound having a bisaryl fluorene skeleton of the component (A) is represented by the following formula (1). [Chemical 2]

R-(OA)m-C (wherein R represents an acryloyl group, a methacryloyl group or a vinyl group, A represents an alkylene group, and m and η each independently represent an integer of 0 to 3). The above alkyl group is, for example, an alkylene group having 1 to 3 carbon atoms. The above m and η are, for example, 1. The compound having a bisaryl fluorene skeleton in the present invention can be used singly, and can impart a low dielectric constant property to a film formed of an imprint material containing the article. The above compound having a bis-radical skeleton can be easily obtained from a commercially available product, and is specifically, for example, OGSOL (registered trademark) ΕΑ-0200, ΕΑ-0500, ΕΑ-1000, EA-F5003, and EA-F5503 ( The above is Osaka Gas Chemical Co., Ltd.). The compound having a bisaryl fluorene skeleton may be used singly or in combination of two or more kinds. The content of the component (A) in the imprint material of the present invention is based on a total of 1 part by mass of the component (A) and the component (B) below, preferably -10-201120061 is 50 to 95 mass. More preferably, it is 70 parts by mass or more. When the ratio is too small, the dielectric property is increased, and the physical properties of the object are not easily obtained. < (Β) component> (a compound having at least one polymerizable group in the molecule) of the (Β) component, which means that one or more polymerizable groups are contained in one molecule, and the polymerizable group is present at the molecular terminal. Base compound. Then, the compound is a monomer or an oligomer. Further, the polymerizable group means, for example, at least one organic group selected from the group consisting of an acryloxy group, a methacryloxy group, a vinyl group, and an allyl group. Here, the acryloxy group means an acryloxy group, and the methacryloxy group means a methacryloxy group. Further, the number of the polymerizable groups in one molecule of the compound of the (Β) component is generally from 1 to 6, and may be more than six. a compound having at least one polymerizable group of the above (Β) component, for example, dipentaerythritol hexaacrylate, dipentaerythritol hexamethacrylate, dipentaerythritol pentaacrylate, dipentaerythritol penta methacrylate, pentaerythritol tetraacrylate, Pentaerythritol tripropylene·caprate, pentaerythritol trimethacrylate, pentaerythritol diacrylate, pentaerythritol dimethacrylate, tetramethylolpropane tetraacrylate, tetramethylolpropane tetramethacrylate, tetrahydroxyl Methane tetraacrylate, tetramethylol methane tetramethacrylate, trimethylolpropane triacrylate, trimethylolpropane trimethacrylate, 1,3,5-tripropenyl hexahydro- S-triazine, 1,3,5-trimethylpropenyl hexahydro-S-triazine, cis (hydroxyethyl propylene decyl) isocyanate, cis (hydroxyethyl methacryl oxime) isocyanate, three Propylene-11 - 201120061 Mercaptocarboxaldehyde, trimethyl propylene hydrazinocarbaldehyde, 1,6-hexanediol acrylate, 1,6-hexanediol methacrylate, neopentyl alcohol diacrylate, neopentyl alcohol Methyl propyl Ethyl ester, ethylene glycol diacrylate, ethylene glycol dimethacrylate, 2-hydroxypropanediol diacrylate, 2-hydroxypropanediol dimethacrylate, diethylene glycol diacrylate, diethylene glycol Dimethacrylate, isopropyl glycol diacrylate, isopropyl glycol dimethacrylate, triethylene glycol diacrylate, triethylene glycol dimethacrylate, N, N'-bis(propylene fluorenyl) half Cysteine, N,N'-bis(methacryloyl)cysteine, thiodiethylene glycol diacrylate, thiodiethylene glycol dimethacrylate, bisphenol A diacrylate , bisphenol A methacrylate, bisphenol F diacrylate, bisphenol F methacrylate, bisphenol S diacrylate, bisphenoxyethanol hydrazine dimethacrylate, diallyl ether bisphenol A , 〇-diallyl bisphenol A, diallyl maleate, triallyl trimellitate, phenyl methacrylate, 2-phenoxyethyl acrylate, and the like. The above compound may be taken from a commercially available product, and is specifically, for example, KAYARD (registered trademark) T-1420, the same DPHA, the same DPHA-2C, the same D-310, the same D-3 30, the same DPCA-20, the same DPCA-30. Same as DPCA-60, DPCA-120, DN-0075, DN-24 75, R-526, NPGDA, PEG400DA, MANDA, R-167, HX-220, HX620, and R-551, the same R-712, the same R-604, the same R-684 > the same GPO- 3 0 3, the same TMPTA, the same THE-3 3 0, the same TPA-320, the same TPA-3 3 0, the same PET-30, same as RP-1040 (above is made by Nippon Kayaku Co., Ltd.), ARONIX (registered trademark) M-210, same M-240, same M-6200, same M-309, same M-400, same M-402, same as M- -12- 201120061 405, the same M-450, the same M-7100, the same M-803 0, the same M-8060, the same M-1310, the same M- 1 600, the same M- 1 9 60, with M-8100, with M- 8 5 3 0, with M-8 5 60, with M-9050 (above is made by East Asia Synthetic Co., Ltd.), VISCOSE295, same 00, same 3 60, with GPT, Same as 3PA, the same 400, the same 260, the same 312, the same 335HP (the above is made by Osaka Organic Chemical Industry Co., Ltd.). The component (B) may be, for example, a mixture of a compound having five of the polymerizable groups in one molecule and a compound having six such polymerizable groups. Further, the above compounds may be used singly or in combination of two or more kinds. The component (B) can achieve a viscosity-adjusting effect of a compound having a biaryl fluorene skeleton of the component (A) having high viscosity. In addition, the content of the component (B) in the imprint material of the present invention is preferably 50 to 5 parts by mass, more preferably 10 parts by weight based on 100 parts by mass of the total of the components (A) and (B). More than the mass. When the ratio is too large, the dielectric constant is increased, and when the ratio is too small, the handleability is deteriorated. (C) component > Photopolymerization initiator of the component (C), for example, 3-butylpentyloxy group Butyrate, 2,5-dimethyl-2,5-bis(benzimidodioxyl)hexyl, 1,4-bis[(1-(3-butyldioxo)-isopropyl Oxy]benzene, peroxidation 2. 3-butyl, 2,5-dimethyl-2,5-bis(3-butyldioxo)hexene hydroperoxide, α-(isopropyl Phenyl)-isopropyl hydroperoxide, 2,5-dimethylhexane, 3-butyl hydroperoxide, 1,1-bis(3-butyldioxo). -13- 201120061 3,3,5-trimethylcyclohexane, butyl-4,4-bis(3-butyldioxo)valerate, cyclohexanone peroxide, 2,2',5,5' -tetrakis (3-butylperoxy) benzophenone, 3,3',4,4'-tetra (3-3-butylperoxycarbonyl)benzophenone, 3,3',4, 4'-tetra(3-pentylperoxycarbonyl)benzophenone, 3,3',4,4'-tetra(3-hexylperoxycarbonyl)benzophenone, 3,3,-double (3-butylperoxycarbonyl)-4,4'-dicarboxyfluorene benzophenone, 3rd Organic peroxides such as benzoic acid benzoate, di-tert 3-butyl diperoxyphthalate, or 9,10-fluorene, 1-pyridium chloride, 2-ruthenium chloride Anthraquinones such as hydrazine, octamethyl hydrazine, 1,2 benzopyrene, or benzoin methyl, benzoin ether, α-methyl benzoine, α-phenyl benzoine, etc. Benzoin derivative, 2,2-dimethoxy-1,2-diphenylethane-1-one, 1-hydroxy-cyclohexyl-benzophenone, 2-hydroxy-2-methyl-1- Phenyl-propan-1-one, 1-[4-(2-hydroxyethoxy)-phenyl]-2-hydroxy-2-methyl-1-propan-1-one, 2-hydroxy-1_[ 4·{4·(2-hydroxy-2-methyl-propenyl)benzyl}-phenyl]-2-methyl-propan-1-one, methyl phenylglyoxylate, 2-methyl -1-[4.(Methylthio)phenyl]-2-morpholinylpropan-1-one, 2-benzyl-2-dimethylamino-b (4-morpholinylphenyl) )-butanone-1,2-dimethylamino-2-(4-methyl-benzyl)-1-(4-morpholin-4-yl-phenyl)-butan-1-one , bis(2,4,6-trimethylbenzylidene)-phenylphosphine oxide, 2,4,6-trimethylbenzylidene-diphenyl-phosphine oxide, 1,2-octane Ketone, 1-[4-(phenylthio)-2-(anthracene-benzoic acid) Base)], ethyl ketone, 1-[9-ethyl-6-(2-methylbenzhydryl)-9H-indazol-3-yl]-, 1-(〇-acetamidine), etc. The light source used in the photohardening is not particularly limited as long as it is an absorber. The above compound may be taken from a commercially available product, and is specifically, for example, IRGACURE (-14-201120061 registered trademark) 651, the same 184, the same 500, Same as 2959, the same 127, the same 754, the same 9 07, the same 3 69, the same 3 79, the same 3 7 9EG, the same 819, the same 819DW, the same 1 00, the same 1 870, the same 7 84, the same OXEO1, the same OXE02 , the same 250, DAROCUR (registered trademark) 1173, the same MBF, the same TPO, the same 4265 (above is Chiba*Japan Co., Ltd.), KAYACURE (registered trademark) DETX, the same MBP, the same DMBI, the same EPA, the same OA ( The above is manufactured by Sakamoto Chemical Co., Ltd.), VICURE-10, the same 55 (above is STAUFFER Co. LTD), ESACURE KIP 1 50 ' with TZT, the same 1001, the same 046, the same ΚΒ1, the same KL200, the same KS300 , ΕΒ3, triazine-PMS, triazine oxime, triazine B (above is made by DKSH Co., Ltd., Japan), ADEKA OPTOMER N-1717, same as N-1 4 1 4, same as N-1 606 (AD EKA Co., Ltd. (formerly Asahi Electronics Industry Co., Ltd.) and so on. These photopolymerization initiators may be used singly or in combination of two or more kinds. The content of the component (C) in the imprint material of the present invention is preferably from 0.5 to 30 phr, more preferably from 1 to 20 phr, based on the total mass of the component (A) and the component (B). When the ratio is 0.1 phr or less, sufficient hardenability cannot be obtained, resulting in deterioration of pattern characteristics. Here, the phr system represents the mass of the photopolymerization initiator relative to the total mass of the component (A) and the component (B), and the component (D) is also contained in the present invention. As component (D). -15- 201120061 The solvent of the component (D) can achieve the viscosity adjustment effect of the compound having the bismuth skeleton of the component (A). The aforementioned solvents are, for example, toluene, p-xylene, o-xylene, phenethyl glycol dimethyl ether, propylene glycol monomethyl ether, ethylene glycol monomethyl ether, and propylene glycol.

Methyl ether acetate, propylene glycol monomethyl ether acetate, ethylene glycol diethyl ether acetate diethylene glycol dimethyl ether, propylene glycol monobutyl ether, ethylene glycol monobutyl ether, glycol diethyl ether, dipropylene glycol monomethyl ether, Diethylene glycol monomethyl ether, dipropyl monoethyl ether, diethylene glycol monoethyl ether 'triethylene glycol dimethyl ether, diethyl ether acetate, diethylene glycol, 1-octanol, ethylene glycol, Hexanediol, keto alcohol, furanol, tetrahydrofuranol, propylene glycol, benzyl alcohol, 1,3-alcohol, 1,4-butanediol, 2,3-butanediol, γ-butyrolactone, acetone, ketone , methyl isopropanone, diethyl ketone, methyl isobutyl ketone, methyl-n-butylcyclohexanone, 2-heptanone, ethyl acetate, isoamyl acetate, isobutyl acetate, n-butyl acetate, n-butyl acetate , ethyl lactate, methanol, ethanol, alcohol, 3-butanol, allyl alcohol 'n-propanol, 2-methyl-2-butanol, alcohol, n-butanol, 2-methyl-1-butanol , 1-pentanol, 2-methyl-1-pentanol ethylhexanol, 1-octanol, ethylene glycol, hexanediol, trimethyl glycol, buffer-2-butanol, diacetone alcohol, furan Alcohol, tetrahydrofuranol, propylenedibenzyl alcohol, isopropyl ether, 1,4-dioxane, , Ν-dimethylformamide, dimethylacetamide, hydrazine-methylpyrrolidone, 1,3-dimethyl-2-imidazolium dimethyl hydrazine, hydrazine-cyclohexyl-2-pyrrolidone, etc. As long as the viscosity of the component (A) can be described, there is no particular limitation. However, in the case of a compound having a bisaryl fluorene skeleton, an aryl olefin in an molecule, an alcohol, a glycol ester, ethylene glycol dimethacrylate, an ester, isopropyl isobutyl or 2-methoxy alcohol , N, N- ketone, at least -16-201120061 The compatibility of the compound having two polymerizable groups and the photopolymerization initiator, 'the solvent is propylene glycol monomethyl ether acetate, propylene glycol monomethyl ether, Γ-butyrolactone, Ν-methylpyrrolidone, methanol, ethanol, isopropanol, butanol, diacetone alcohol, acetone, methyl ethyl ketone, methyl isobutyl ketone, ethylene glycol, propylene glycol, hexane diol, Methyl cellosolve, ethyl cellosolve, butyl cellosolve, ethyl carbitol, butyl carbitol, diethylene glycol monomethyl ether, propylene glycol monomethyl ether, propylene glycol monobutyl ether, dicyclohexanone , methyl acetate, ethyl acetate and the like. These solvents may be used singly or in combination of two or more kinds. The embossing material of the present invention may contain a photosensitizer, an ultraviolet absorber, an antioxidant, an surfactant, a adhesion aid, etc. as long as it does not impair the effects of the present invention. The photo sensitizer is, for example, a thioxan system, a xanthene system, a ketone system, a thiouryl salt, a basic styrene group, a phthalocyanine system, a 3-substituted coumarin system, and a 3,4-substituted coumarin system. , salino blue, acridine, thiazine, phenazine, onion, benzene, benzophenone, phenanthrene, ketocoumarin, lavender, boric acid ester, and the like. These photosensitizers may be used singly or in combination of two or more kinds. The wavelength of the UV range can also be adjusted by using the photosensitizer.

The ultraviolet absorbers are, for example, TINUVIN (registered trademark) PS, the same 99-2, the same 109, the same 3 2 8 , the same 3 84-2, the same 400, the same 405, the same 460, the same 477, the same 479, the same 900, Same as 928, the same 1130, the same 111FDL, the same 123, the same 144, the same 152, the same 292, the same 5100, the same 400-DW' with 477-DW, the same 99-DW, the same 123-DW, the same 5 0 50, Same as 5060, with 5151 (the above is Chiba • Japanese shares have companies). -17- 201120061 The above ultraviolet absorbers may be used alone or in combination of two or more. By using the ultraviolet absorber, the curing speed of the outermost surface of the film at the time of photohardening can be controlled, and the mold release property can be improved. The above antioxidants are, for example, IRGANOX (registered trademark) 1010, the same as 1 03 5, the same 1 076, the same 1135, the same 1 520L (above, Chiba, Japan Co., Ltd.) and the like. These antioxidants may be used singly or in combination of two or more kinds. By using this antioxidant, the yellowing of the film due to oxidation can be prevented.

The above surfactants such as polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyethylene oxide acetophenone, polyoxyethylene ether ether, and the like, polyoxyethylene alkyl ethers, polyoxyethylene octyl phenol ether, polyethylene oxide Polyoxyethylene alkyl ether allyl ethers of nonylphenol ethers, polyoxyethylene/propylene oxide block copolymers, sorbitan monolaurate, sorbitan monopalmitate, sorbitan Sorbitan fatty acid esters such as monostearate, sorbitan monooleate, sorbitan trioleate, sorbitan tristearate, polyoxyethylene sorbitan Monolaurate, polyoxyethylene sorbitan monopalmitate, polyoxyethylene sorbitan monostearate, polyoxyethylene sorbitan trioleate, polyoxyethylene sorbitan III A nonionic surfactant such as a polyoxyethylene sorbitan fatty acid ester such as stearate, trade name EFTOP (registered trademark) EF301, EF303, EF352 (Mitsubishi Materials Electronics Co., Ltd. (old JEMCO shares limited) Division system)), trade name MEGAFAC (registered trademark) F171, F173, R-08 'R-30 (DIC -18- 201120061 Co., Ltd.), 011 Ba Jie 1 ^ 0? € 430 ,? 0431 (made by Sumitomo 31^ Co., Ltd.), trade name ASASHIGUARD (registered trademark) AG710, SURFLON S - 3 8 2. SC10 1, SC102, SC103, SC104, SC105, SC106 (made by Asahi Glass Co., Ltd.) Surfactant, and organic siloxane polymer KP341 (manufactured by Shin-Etsu Chemical Co., Ltd.), BYK-302, BYK-307, BYK-322, BYK-3 23, BYK-3 30, BYK-3 3 3. BYK - 3 7 0, BYK - 3 7 5, BYK-3 7 8 (BYK. JAPAN Co., Ltd.), etc. The above surfactants may be used singly or in combination of two or more kinds. When the surfactant is used, the ratio thereof is preferably from 0.1 liter to 10 phr, more preferably from 0. 01 phr to 5 phr, based on the total mass of the component (A) and the component (B). For example, 3-methacryloxypropyltrimethoxydecane, 3-propyleneoxypropyltrimethoxydecane, and the like. By using the adhesion aid, the adhesion to the substrate can be improved. The content of the adhesion aid is preferably from 5 phr to 50 phr, more preferably from 10 phr to 50 phr, based on the total mass of the component (A) and the component (B). The preparation method of the imprint material of the present invention is not particularly limited as long as the components (A), (B), (C) and (D) are uniformly mixed. Further, the order of mixing the components (A) to (D) is not particularly limited as long as a uniform solution can be obtained. This preparation method is, for example, a method of mixing the component (b) and the component (C) in a specific ratio in the component (A). Further, for example, a method in which the component (D) is mixed with ruthenium, and a uniform solution is formed. In addition, in the appropriate stage of the preparation of the method -19-201120061, other additives may be added as needed to be mixed. In addition, when the solvent of the component (D) is used, at least one of the film before the light irradiation and the film after the light irradiation may be subjected to a baking treatment for the purpose of evaporating the solvent. The firing machine is not particularly limited. For example, a hot plate, an oven, or an oven can be used, and it can be baked in an appropriate gas atmosphere, that is, an inert gas such as air or nitrogen, or a vacuum. The firing temperature is not particularly limited as long as the solvent is evaporated. For example, it can be carried out at 40 to 200 °C. The imprint material 'of the present invention' can be applied to a substrate to be photocured, and then heated as needed to obtain a desired film. The coating method is, for example, a conventional or well-known method such as a spin coating method, a dipping method, a flow coating method, a spray method, a spray method, a bar coating method, a gravure coating method, a slit coating method, a coating method Method, transfer method, brush coating method, blade coating method, air knife coating method, and the like. The substrate to be coated with the imprint material of the present invention is, for example, a glass in which sand, indium tin oxide (ITO) is formed (hereinafter referred to as "ITO substrate"), and a glass in which tantalum nitride (SiN) is formed. A film formed of indium zinc oxide (IZ〇) glass, polyethylene terephthalate (PET), plastic, glass, quartz, ceramics or the like is formed. Further, a flexible substrate having flexibility can also be used.

The light source for hardening the imprint material of the present invention is not particularly limited, and is, for example, a high pressure mercury lamp, a low pressure mercury lamp, a metal halide lamp, a KrF excimer laser, an ArF excimer laser, an excimer laser, an electron beam (EB - 20- 201120061

), extreme ultraviolet rays (E U V ), etc. Further, in general, a wavelength of 436 nm G line, a 405 nm Η line, a 365 nm I line, or a GHI mixed line can be used. Further, the exposure amount is preferably 30 to 20 00 m J/cm 2 and is preferably 30 to 1000 mJ/cm 2 光, and the image is not particularly limited as long as it is a target pattern, for example, ST50 of Toshiba Machine Co., Ltd. is used. A commercially available device such as Sindre (registered trademark) 60 manufactured by Obducat and NM-0801HB manufactured by Mingchang Corporation. The mold material used in the photoimprint used in the present invention, for example, quartz, ruthenium, nickel, carbonyl decane, glass graphite or the like, is not particularly limited as long as it is a target image. Further, when the mold is used to improve the mold release property, a mold release treatment for forming a film of a fluorine-based compound or the like on the surface thereof can be performed. The release agent used for the release treatment, for example, OPTOOL (registered trademark) HD manufactured by DAIKIN Industrial Co., Ltd., is not particularly limited as long as it is a pattern of the purpose. When the pattern of the optical embossing is selected and the pattern of the electronic device suitable for the purpose is selected, the pattern size is also used as a reference. The pattern size is, for example, nanometer and micrometer. [Embodiment] Hereinafter, the present invention will be described in more detail by way of examples and comparative examples, but the invention is not limited by the examples. [Examples] [Preparation of coating liquid for film formation]

-21 - S 201120061 <Example 1> In KAGRAD (registered trademark) EA-0200 (hereinafter referred to as "OGSOL"), 10 g of OGSOL (registered trademark) was added to KAYARAD (registered trademark) Alcohol diacrylate (manufactured by Nippon Kayaku Co., Ltd.) (hereinafter referred to as "NPGDA") 2.5 g (25 parts by mass relative to 1 part by mass of OGSOL), IRGACURE (registered trademark) OXE01 (limited to Chiba»Japan Company system (hereinafter referred to as "OXE01") 〇.62g (the total mass of SG relative to OGSOL and NPGDA), modulating the imprint material pm". <Example 2> The imprint material p NI - 2 was prepared in the same manner except that the NPGDA of Example 1 was changed to pentaerythritol tripropionate (manufactured by ALDIUCH Co., Ltd.) (hereinafter abbreviated as "ρΤΑ"). <Example 3> In the PNI-1 obtained in Example 1, propylene glycol monoacetate vinegar (hereinafter abbreviated as "PGMEA") of i3.lg was added to prepare an imprint material PNI-3. <Example 4> In the PNI-2 obtained in Example 2, IPG.1 PGMEA modulation imprint material PNI-4 was added. -22- 201120061 <Comparative Example ι> The imprint material pNI_a was prepared by adding 0 5g 〇XE01 (5 phr relative to NPGDA) to 10 g of NPGDA. <Comparative Example 2 > The imprint material PNI-b was prepared in the same manner except that the NPGDA of Comparative Example 1 was changed to PTA. <Comparative Example 3 > The imprint material PN1-c was prepared in the same manner except that the OG SOL of Example 1 was changed to PTA. <Comparative Example 4 > Into PNI-a obtained in Comparative Example 1, 5 g of PGMEA was added to prepare an imprint material PNI-d. <Comparative Example 5 > In the PNI-b obtained in Comparative Example 2, 10 g of the PGMEA'-modulation imprint material PN1-e was added. <Comparative Example 6 > In the PNI-c obtained in Comparative Example 3, 10 g of the PGMEA'-modulation imprint material pNI_f was added. -23-201120061 [Production of Film for Photoimprint] PNI-1 obtained in Example 1 was spin-coated on a quartz substrate to obtain a film for photoimprint (PNI-1F). The PNI_2 obtained in Example 2 was spin-coated on a quartz substrate to obtain a film for photoimprint (PNI-2F). The pni-3 obtained in Example 3 was spin-coated on a quartz substrate, and subjected to a pseudo-firing treatment on a hot plate at 100 °C for 1 minute to obtain a film for photoimprint (PNI-3F). The PNI-4 obtained in Example 4 was spin-coated on a quartz substrate, and subjected to a pseudo-baking treatment on a hot plate of 1 °C for 1 minute to obtain a film for photoimprint (PNI-4F). The PNI-a obtained in Comparative Example 1 was spin-coated on a quartz substrate to prepare a film for photoimprint (PNI_aF). The PNI-b obtained in Comparative Example 2 was spin-coated on a quartz substrate to prepare a film for photoimprint (PNI-bF). The PNI-c obtained in Comparative Example 3 was spin-coated on a quartz substrate to prepare a film for photoimprint (PNI-cF). The PNI-d obtained in Comparative Example 4 was spin-coated on a quartz substrate, and subjected to a pseudo-baking treatment on a hot plate at 100 ° C for 1 minute to obtain a film for photoimprint (PNI-dF). The PNI_e obtained in Comparative Example 5 was spin-coated on a quartz substrate, and subjected to a pseudo-baking treatment on a hot plate at 100 ° C for 1 minute to obtain a film for photoimprint (PNI-eF). The PNI-f-24-201120061 obtained in Comparative Example 6 was spin-coated on a quartz substrate, and subjected to a pseudo-baking treatment on a hot plate of 1 ° C for 1 minute to obtain a film for photoimprint (PNI-fF). ). The nanoimprinting device uses NM-0801HB (Mingchang Institution Co., Ltd.). Each of the photoimprint coating films obtained in Examples 1 to 4 and Comparative Examples 1 to 6 was subjected to a patterning test. The mold used was tantalum and the pattern was 120 nm line and pitch. The mold was immersed in OPTOOL (registered trademark) HD (manufactured by DAIKIN Industrial Co., Ltd.) beforehand, and treated with a high-temperature and high-humidity apparatus at a temperature of 90 ° C and a humidity of 90 RH % for 2 hours, and rinsed with pure water to The air is dried. In the state in which the crucible mold was bonded to the PNI-1F produced by the PNI-1 obtained in Example 1, it was placed on a photo imprint apparatus. The photoimprinting treatment is carried out under the condition of constant temperature of 2 3 °C, a) pressurization for 1 〇 second until 1 000 N, b) exposure with 500 mJ/cm 2 using a high pressure mercury lamp, c) depressurization for 1 〇 second , d) separating the mold from the substrate and demolding 'in this order. The results of the photoimprint process are shown in Table 1. A photo imprint process was performed in the same manner as described above except that PNI-2F produced by PNI-2 obtained in Example 2 was used. The results of the photoimprint process are shown in Table 1. The photoimprint treatment was carried out in the same manner as described above except that the PNI-3F produced by the PNI-3 obtained in Example 3 was used. The results of the photoimprint process are shown in Table 1. A photoimprint treatment was carried out in the same manner as described above except that the PNI-4F produced by the PNI-4 obtained in Example 4 was used. The result of photoimprint processing -25- 201120061 is shown in Table 1. The photoimprint treatment was carried out in the same manner as described above except that the PNI-a obtained in Comparative Example 1 was used. The light pressure is as shown in Table 1. The photoimprint treatment was carried out in the same manner as described above except that the PNI-b obtained in Comparative Example 2 was used. The light pressure EI is shown in Table 1. The photoimprint treatment was carried out in the same manner as described above except that the PNI-c obtained in Comparative Example 3 was used. Light pressure £| as shown in Table 1. The photoimprint treatment was carried out in the same manner as described above except that the PNI-d obtained in Comparative Example 4 was used. The light pressure day is shown in Table 1. The photoimprint treatment was carried out in the same manner as described above except that the PNI-e obtained in Comparative Example 5 was used. The light pressure day is shown in Table 1. The photoimprint treatment was carried out in the same manner as described above except that the pNI-f obtained in Comparative Example 6 was used. The light pressure 曰 is shown in Table 1. The result of PNI-b F 丨 treatment as a result of PNI-aF I treatment, and the result of PNI-eF 丨 treatment as a result of PNI-dF 丨 treatment of the result of PNI-cF I treatment Results of PNI-fF I treatment-26 - 201120061

[Table 1] Pattern of photo-imprinting film pattern Light-hardening treatment Peeling shape Example 1 PNI-1F 〇〇〇 Example 2 PNI-2F 〇〇〇 Example 3 PNI-3F 〇〇〇 Example 4 PNI- 4F 〇〇〇Comparative Example 1 PNI-a F 〇XX Comparative Example 2 PNI-bF 〇XX Comparative Example 3 PNI-c F 〇XX Comparative Example 4 PNI-dF 〇XX Comparative Example 5 PNI-e F 〇XX Comparative Example 6 PNI- f F 〇 XX In Table 1, "photohardening treatment" refers to the evaluation of whether or not the film is hardened after exposure, "〇" means hardened, and "X" means not hardened. "Peeling" means evaluating whether or not a part of the pattern is peeled off due to adhesion to a mold or the like when the mold is released."" means that it is not peeled off, and "X" means peeling off. "Shape" means that it is evaluated whether or not the mold pattern on the film after demolding is well transferred. The system indicates good transfer, and the x system indicates that it is not well transferred. As is apparent from the results of Table 1, in Examples 1 to 4, a pattern was formed at the time of good photoimprint. Further, in Comparative Examples 1 to 6, the film was cured by exposure. Only when part of the pattern was peeled off during demolding, the pattern of the mold on the film after demolding was not well transferred. As a result of the above, it is understood that the composition of the imprint material which forms a low dielectric constant film which is excellent in photoimprint treatment must have the component (A): a compound having a biaryl fluorene skeleton represented by the above formula (1). (b) Component·· -27- 201120061 A compound having at least two polymerizable groups in a molecule and a component (C): a photopolymerization initiator are not clear. In addition, it may contain (D) component: solvent, and it is not clear. [Measurement of Dielectric Constant] The dielectric constant is measured by vacuum simple PROVA MJ-10 (manufactured by Measure Jig Co., Ltd.) and AG-4311B LCR Meter (manufactured by Ando 11 machine), with a cycle number of 10 0 kHz. The measurement was carried out. The PNI-1 obtained in Example 1 was spin-coated on the ITO substrate, and the quartz substrate was coated thereon, and was subjected to a) pressure for 10 seconds until 1 000 N at a constant temperature of 23 ° C, b) using a high pressure. The mercury lamp was exposed to 500 mJ/cm2, c) the pressure was removed for 10 seconds, d) the mold and the substrate were separated and released, and a photocured film was formed on the ITO substrate, and a part of the film was peeled off, and ITO was peeled off. Then, on the ITO which was not peeled off and on the cured film, aluminum was vapor-deposited with a diameter of 1 mm and a thickness of 0.1 μm, and the probe was brought into contact with the probe to measure the dielectric constant. The results are shown in Table 2. The dielectric constant was measured in the same manner as described above except that ΡΝΙ-2 obtained in Example 2 was used. The results are shown in Table 2. The crucible-3 obtained in Example 3 was spin-coated on a crucible substrate, and subjected to a pseudo-baking treatment on a hot plate at 100 °C for 1 minute, and the quartz substrate was coated thereon at a constant temperature of 23. (: The conditions are sequentially performed a) Pressurized for 1 〇 second until 1 000 N, b) Exposure is performed using a high-pressure mercury lamp at 500 mJ/cm2, c) Pressing for 10 seconds, d) Separating the mold from the substrate In this order, a photo-cured film was formed on an ITO substrate, and subjected to a calcination at a hot plate of 200 ° C for -28-2011 20061 for 1 minute. A portion of the film was taken and the ITO was peeled off. Then, aluminum was vapor-deposited on a crucible and a cured film which were not peeled off with a diameter of 1 mm and a thickness of ο. ΐμπι, and contacted with a probe to measure a dielectric constant. The results are shown in Table 2. The dielectric constant was measured in the same manner as described above except that hydrazine-4 obtained in Example 4 was used instead of hydrazine-3. The results are shown in Table 2. The PNI-a obtained in Comparative Example 1 was spin-coated on a ruthenium substrate, and the quartz substrate was coated thereon, and was subjected to a) pressure for 10 seconds until 1 000 N in a normal condition of 23 ° C, and b) using a high-pressure mercury lamp. The exposure was performed at 500 mJ/cm2, c) the pressure was removed for 10 seconds, d) the mold and the substrate were separated and released, and a photo-cured film was formed on the ITO substrate in this order, and a part of the film was peeled off, and ITO was peeled off. Then, aluminum was vapor-deposited on the ITO which was not peeled off and on the cured film by a thickness of 1 mm and a thickness of 0.1 μm, and contacted with the probe to measure the dielectric constant. The results are shown in Table 2. The dielectric constant was measured in the same manner as described above except that PNI-b obtained in Comparative Example 2 was used. The results are shown in Table 2. The dielectric constant was measured in the same manner as described above except that PNI-c obtained in Comparative Example 3 was used. The results are shown in Table 2. The PNI-d obtained in Comparative Example 4 was spin-coated on an ITO substrate, and subjected to a pseudo-baking treatment on a hot plate of 1 ° C for 1 minute, and the quartz substrate was coated thereon, and was sequentially performed under the condition of 23 t at a constant time. Pressurize for 10 seconds until 1 000 N, b) expose with 500 mJ/cm2 using a high-pressure mercury lamp, c) remove the mold for 10 seconds, d) separate the mold from the substrate, and prepare photohardening on the ITO substrate in this order. The film was subjected to a calcination at a hot plate of 200 ° C for -29-2011 20061 for 1 minute. Cut a part of the film and peel off the ιτο. Then, on the stripped I Τ 0 and the cured film, each of the aluminum was subjected to vapor deposition treatment by a thickness of 1 m m and was subjected to vapor deposition treatment, and the dielectric constant was measured, and the dielectric constant was measured as shown in Table 2. The dielectric constant was measured in the same manner except that PNI-e obtained in Comparative Example 5 was used instead of PNI_d. The results are shown in Table 2. The dielectric constant was measured in the same manner except that PNI-f obtained in Comparative Example 6 was used instead of PNI_d. The results are shown in Table 2. [Table 2] Imprinting material dielectric constant used Example 1 ΡΝ I - 1 3. 0 Example 2 ΡΝ I -2 3. 〇 Example 3 ΡΝ I -3 3. 0 Example 4 ΡΝ I -4 3. 〇Comparative Example 1 ΡΝ I - a 3. 3 Comparative Example 2 ΡΝ I - b 3. 4 Comparative Example 3 ΡΝ I - c 3. 4 Comparative Example 4 ΡΝ I - d 3. 3 Comparative Example 5 ΡΝ I -e 3. 3 Comparative Example 6 ΡΝ I - f 3. 4 From the results of Table 2, it is understood that "the coatings having a constant can be formed in Examples 1 to 4. Further, the results of Comparative Examples 1 to 6 and the examples have high dielectric constants. From the foregoing results, it is understood that the imprint material of the present invention has a low dielectric constant of 3.0 or less. [Measurement of transmittance] No degree of 0·1 μιη. As a result, as described above, when the film has a low dielectric ratio, the transmittance of the obtained film, -30-201120061, is measured using UV-25 50 UV-VISIBLE SPECTROPHOTOMETER (made by Shimadzu Corporation). The transmittance of the film thickness Ιμιη of the sample having a wavelength of 400 nm was taken. The crucible -1 obtained in Example 1 was spin-coated on a quartz substrate, and the quartz substrate was coated thereon, and a) was pressed for 10 seconds at a constant temperature of 3 ° C for 10 seconds until 1000 N, b) The high-pressure mercury lamp is exposed to 500 mJ/cm2, c) the pressure is removed for 10 seconds, d) the coated quartz substrate is separated and released from the quartz substrate on the lower side, and a photo-cured film is formed on the quartz substrate in this order. The transmittance was measured. The results are shown in Table 3. A photocured film was formed on a quartz substrate in the same manner as described above except that PN1-2 obtained in Example 2 was used, and the transmittance was measured. The results are shown in Table 3. The PNI-3 obtained in Example 3 was spin-coated on a quartz substrate, and subjected to a pseudo-firing treatment for 1 minute using a hot plate of 1 Torr. Then, the quartz substrate was coated thereon, and a) pressure was applied for 10 seconds until 1000 N in a normal condition of 23 ° C, b) exposure was performed at 500 mJ/cm 2 using a high pressure mercury lamp, and c) depressurization was performed for 10 seconds, d The coated quartz substrate was separated and released from the quartz substrate on the lower side, and a photocured film was formed on the quartz substrate in this order, and then fired at a hot plate of 200 ° C to measure the transmittance. The results are shown in Table 3. A photocured film was formed on a quartz substrate in the same manner as described above except that PNI-4 obtained by the method of Example 4 was used instead of PNI-3, and the transmittance was measured. The results are shown in Table 3. Spin coating on a quartz substrate P NI - a, -31 - 201120061 obtained in Comparative Example 1 was coated thereon with other quartz substrates, and was sequentially subjected to a condition of 23 ° C for 10 seconds until 1 000 N. So far, b) using a high-pressure mercury lamp for exposure at 500 mJ/cm2, c) removing the pressure for 10 seconds, d) separating and removing the coated quartz substrate from the quartz substrate on the lower side, and performing photohardening on the quartz substrate in this order. The film was measured for transmittance. The results are shown in Table 3. A photocured film was formed on a quartz substrate in the same manner as described above except that PNI-b obtained in Comparative Example 2 was used, and the transmittance was measured. The results are shown in Table 3. A photocured film was formed on a quartz substrate in the same manner as described above except that PNI-c obtained in Comparative Example 3 was used, and the transmittance was measured. The results are shown in Table 3. The PNI-d obtained in Comparative Example 4 was spin-coated on a quartz substrate, and subjected to a pseudo-baking treatment on a hot plate at 1 ° C for 1 minute. Then, the other quartz substrates were coated, and a) pressure was applied for 10 seconds to 1000 N in a normal condition of 2 3 ° C, b) exposure was performed at 500 mJ/cm 2 using a commercial pressure mercury lamp, and c) was pressed for 10 seconds. Clock, d) The coated quartz substrate is separated from the lower quartz substrate and released, and the photocured film is formed on the quartz substrate in this order, and is fired at a hot plate of 200 ° C, and then measured. Transmittance. The results are shown in Table 3. A photocured film was formed on a quartz substrate in the same manner as described above except that P NI - e obtained in Comparative Example 5 was used instead of p n I - d , and the transmittance was measured. The results are shown in Table 3. A photocured film was formed on a quartz substrate in the same manner as described above except that P NI - f obtained in Comparative Example 6 was used instead of p n I _ d , and the transmittance was measured. -32- 201120061 The results are shown in Table 3. [Table 3] Imprinting material transmittance (%) used Example 1 PN I - 1 9 9 Example 2 PN I _ 2 9 9 Example 3 PN I - 3 9 9 Example 4 PN I - 4 9 9 Comparative Example 1 PNI — a 9 9 Comparative Example 2 PNI — b 9 9 Comparative Example 3 PN I _ c 9 9 Comparative Example 4 PN I — d 9 9 Comparative Example 5 PNI-e 9 9 Comparative Example 6 PN I — f From the results of Table 3, it is understood that high transmittance can be achieved in all of Examples 1 to 4 and Comparative Examples 1 to 6. [Measurement of Refractive Index] The refractive index was measured by using n&k Technology 15 12RT (manufactured by N&k Technology, Inc.) to measure the refractive index at a wavelength of 633 nm. The PNI-1 obtained in Example 1 was spin-coated on a ruthenium wafer, and the quartz substrate was coated thereon, and was subjected to a) pressurization for 1 〇 second until 1 000 N in a normal condition of 2 3 ° C, b) The high-pressure mercury lamp was used for exposure at 500 mJ/cm2, c) the pressure was removed for 10 seconds, d) the quartz substrate and the tantalum wafer were separated and released, and a photo-cured film was formed on the tantalum wafer to measure the refractive index. The results are shown in Table 4. A photocured film was formed on a tantalum wafer in the same manner as described above except that PN1-2 obtained in Example 2 was used, and the refractive index was measured. The results are shown in Table -33- 201120061 4. The pNI-3 obtained in Example 3 was spin-coated on a sand wafer, and subjected to a pseudo-baking treatment at 100 ° C for 1 minute. Then, the quartz substrate is coated thereon, and a) pressure is applied for 10 seconds until 1 000 N in a normal condition of 23 ° C, b) exposure of 5 〇〇 mJ/cm 2 using a high-pressure mercury lamp, c) decompression 10 In the second, d) the quartz substrate and the tantalum wafer are separated and released, and a photocured film is formed on the tantalum wafer in this order, and the refractive index is measured by a hot plate of 20 (TC), and the refractive index is measured. In the same manner as described above, a photocured film was formed on a ruthenium wafer, and the refractive index was measured. The results are shown in Table 4. The results are as shown in Fig. 4. The PNI-a obtained in Comparative Example 1 was spin-coated on the circle, and the quartz substrate was coated thereon, and was subjected to a) pressurization for 10 seconds until 1 000 N in a normal condition of 2 3 ° C, and b) using a high-pressure mercury lamp. Exposure at 500 mJ/cm2, c) Depressurization was performed for 1 sec, d) The quartz substrate and the ruthenium wafer were separated and released, and a photo-cured film was formed on the ruthenium wafer to measure the refractive index. The results are shown in Table 4. A photocured film was formed on a tantalum wafer in the same manner as described above except that PNI-b obtained in Comparative Example 2 was used, and the refractive index was measured. The results are shown in Table 4. A photocured film was formed on a tantalum wafer in the same manner as described above except that PNI-c obtained in Comparative Example 3 was used, and the refractive index was measured. The results are shown in Table 4. ® PNI-d obtained in Comparative Example 4 was spin-coated on a sand wafer, and subjected to a pseudo-baking treatment on a hot plate of -34-201120061 100 °C for 1 minute. Then, the stone substrate is covered with 'the order of 2 3 C at the time of lifting a) pressurization for 1 〇 seconds until 1000 N' b) exposure using a mercury lamp at 5 〇〇 mJ/cm 2 ' c) In addition to pressing for 1 〇 second 'd), the quartz substrate and the ruthenium wafer were separated and released, and a photo-curing film was formed on the ruthenium wafer to be 200. (The hot plate was subjected to a calcination treatment, and the refractive index was measured. The results are shown in Table 4. The same procedure as described above was carried out on the tantalum wafer except that PNI-e obtained by Comparative Example 5 was used instead of pNI_d. The photocured film was measured for the refractive index. The results are shown in Table 4. The photocured film was formed on a tantalum wafer and the measurement was performed in the same manner as described above except that pNI_d was replaced by PNI-f obtained in Comparative Example 6. The results are shown in Table 4. [Table 4] Refractive index (%) of imprinting material used Example 1 PN I -1 1.6 2 Example 2 PN I -2 1.6 1 Example 3 PNI-3 1.6 2 Example 4 PN I — 4 1.6 1 Comparative Example 1 PN I — a 1, 5 3 Comparative Example 2 PNI-b 1.5 4 Comparative Example 3 PN I -c 1. 5 4 Comparative Example 4 PNI-d 1.5 3 Comparative Example 5 PN I - e 1.5 4 Comparative Example 6 PNI-f 1.5 4 From the results of Table 4, it was found that films having a high refractive index were formed in Examples 1 to 4. Further, Comparative Examples 1 to 6 were compared with Examples 1 to 4. When it is compared, there is a result that the refractive index is not good. -35- 201120061 From the above results, it is known that the film obtained by the imprint material of the present invention has a high refractive index of more than 1.6. From the above results, it is understood that the film obtained from the imprint material of the present invention has good light leg printability, and has a low dielectric constant, a high refractive index, and a high transmittance. [Industrial Utilization Price] By the present invention The film obtained by the embossing material can be suitably used for an interlayer insulating film and/or a gate insulating film of a semiconductor element such as an electric field effect transistor, an electronic device, and an optical member.

Claims (1)

201120061 VII. Patent application scope: 1_ An embossing material characterized by containing (A) component, (B) component and (C) component 'and the combination of the above (a) component and (B) component g ten 100 mass The fraction is contained in an amount of 50 to 95 parts by mass of the component (A) and 50 to 5 parts by mass of the component (B), and the component (A) has a biaryl fluorene skeleton represented by the following formula (丨). Compound (B) Component: Compound (C) having at least one polymerizable group in the molecule Component: Photopolymerization initiator [Chemical Formula 1] R-(〇A)m-C (wherein R represents an acryl fluorenyl group, a methacryl fluorenyl group or a vinyl group, and the A group represents a non-external base m and the η system independently represents an integer of 〇 〜 3). 2. An imprint material as claimed in claim 1 which contains a solvent as the component (D). (3) The imprint material according to the first aspect of the invention, wherein the (Α) component is contained in an amount of 70 parts by mass or more based on 1 part by mass of the total of the above (Α) component and the above (Β) component. 4. The imprint material as claimed in any of claims 1 to 3, wherein the (Β) component has a selected from the group consisting of a propylene oxy group, a methyl propylene oxide group, a vinyl group and an allylic group. At least one group of groups is used as a compound of the polymerizable group -37-201120061. A film on which a pattern is transferred, which is produced by the imprint material of any one of claims 1 to 4. An optical member characterized by comprising a film having a pattern transferred as in the fifth aspect of the patent application. A semiconductor device characterized by comprising a film having a pattern transferred as in the fifth aspect of the patent application. An electronic device characterized by comprising a film having a pattern transferred as in claim 5 of the patent application. -38- 201120061 IV Designated representative map: (1) The representative representative of the case is: None. (II) Simple description of the symbol of the representative figure: None 201120061 V. If there is a chemical formula in this case, please disclose the chemical formula that best shows the characteristics of the invention: none