TW201119064A - Photoelectric converter - Google Patents

Photoelectric converter Download PDF

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Publication number
TW201119064A
TW201119064A TW099130093A TW99130093A TW201119064A TW 201119064 A TW201119064 A TW 201119064A TW 099130093 A TW099130093 A TW 099130093A TW 99130093 A TW99130093 A TW 99130093A TW 201119064 A TW201119064 A TW 201119064A
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Taiwan
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photoelectric conversion
metal substrate
conversion device
electrode
solar cell
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TW099130093A
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Chinese (zh)
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Hiroshi Kubo
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Fujifilm Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02002—Arrangements for conducting electric current to or from the device in operations
    • H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
    • H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02002—Arrangements for conducting electric current to or from the device in operations
    • H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
    • H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
    • H01L31/0201—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules comprising specially adapted module bus-bar structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02002—Arrangements for conducting electric current to or from the device in operations
    • H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
    • H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
    • H01L31/02013—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules comprising output lead wires elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03923—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIBIIICVI compound materials, e.g. CIS, CIGS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03925—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIIBVI compound materials, e.g. CdTe, CdS
    • H—ELECTRICITY
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/1354—Coating
    • H01L2224/13599—Material
    • H01L2224/136—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13601—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/13609—Indium [In] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01327—Intermediate phases, i.e. intermetallics compounds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells

Abstract

Provided is a photoelectric converter including: a metal substrate in which a conductor and an electric insulator layer at least on the surface of the conductor are formed; a photoelectric device which is formed on the insulator; a first conductive component which is connected to either the positive electrode or the negative electrode of the photoelectric converter and transfers output of the photoelectric converter from one of the electrodes to the outside; an electric acceptor which connects the other electrode to the conductor of the metal substrate; and a second conductive component which transfers the output from the other electrode to the outside through the conductor and the electric acceptor. The second conductive component directly or indirectly connects to one position of the conductor.

Description

201119064 六、發明說明： 【發明所屬之技術領域】 本發明是有關於一種低成本（C0St)且可靠性高的光 電變換裝置，尤其是有關於一種將基板的良導體部用於電 極的牽繞的光電變換裝置。 【先前技術】 目前，太陽電池的研究正廣泛盛行。構成太陽電池的 太陽電池模組（module)包括於基板上將多個積層構造的 光電變換元件予以串聯連接而成的太陽電池子模組（sub module)’上述積層構造的光電變換元件是以背面電極（下 部電極）與透明電極（上部電極）來包夾著因光吸仅而產 生電流的半導體的光電變換層。例如，已提出有如下所示 的太陽電池子模組。 如圖10所示’於太陽電池模組1〇〇中，於太陽電池子 模組102的背面設置玻璃（glass)基板1〇4，於該太陽電 池子模組102的玻璃基板104的相反侧，藉由作為密封接 著層而發揮功能的乙烯醋酸乙烯酯（Ethylene Vinyl Acetate，EVA)樹脂層（乙烯醋酸乙烯酯樹脂層）1〇6來 安裝著蓋玻璃（cover glass) 108。而且，於該玻璃基板1〇4 的背面側’藉由EVA樹脂層106來安裝著後罩薄片（back sheet) 110 。 於該後罩薄片110上，進而安裝有將自太陽電池子模 組102抽出的内部配線予以連接的接電箱112。於該接電 箱112上設置有纜線（cable) 114，藉此，太陽電池模組 201119064 100可與外部連接。 此外，在蓋玻璃108及後罩薄片110被安裝於太陽電 池子模組102及玻璃基板1 〇4上的狀態下，經由密封（seal) 材料116而固定於框架（frame ) 118。 再者，對於太陽電池模組1〇〇而言，亦存在不設置玻 璃基板104且設置保護層來代替蓋玻璃108的構成的太陽 電池模組。 例如，以圖11 (a)〜圖11 (d)所示的方式來製造太 陽電池模組100。 首先，如圖11 (a)所示，準備於基板的表面上將多 個積層構造的光電變換元件予以串聯連接而成的太陽電池 子模組102,該積層構造的光電變換元件是以背面電極與 透明電極來包夾著因光吸収而產生電流的半導體的光電變 換層。 接著，如圖11 (b)所示，例如，將使用有銅箔的配 線120設置於太陽電池子模組1〇2的兩端部的各電極的端 子處。接著設置配線122，該配線122自兩端的配線120 起，分別折回至太陽電池子模組1〇2的背面102b且延伸至 太陽電池子模組102的大致中央部為止。該配線122例如 由銅帶（ribbon)構成。 接著，如圖11 (c)所示，將EVA樹脂層1〇6及覆蓋 層124配置於太陽電池子模組1 〇2的表面1 〇2a側，將EVA 樹脂層106及後罩薄片11〇配置於太陽電池子模組1〇2的 背面102b側。此時，配線122自設置於背面侧的EVA樹 201119064 脂層106及後罩薄片110的孔（未圖示）突出。以該狀態， 藉由真空層壓（laminate)法來使上述構件一體化。 接著，實施修整（trimming)加工，然後使自後罩薄 片110突出的配線122折回等，如圖u ((1)所示，使上 述配線122連接於接電箱Π2，然後使用接著劑等來將接 電箱112安裝於後罩薄片11〇。 此外，除上述太陽電池子模組以外，已提出有各種太 陽電池子模組（參照專利文獻1、專利文獻2)。 於專利文獻1所揭示的太陽電池模組中，將包含乙婦_ 四氟乙烯（Ethylene Tetrafluoroethylene ’ ETFE )的表面保 護構件、及包含EVA (乙烯醋酸乙烯酯）的接著性樹脂予 以重合，將太陽電池載置於該接著性樹脂上。於該太陽電 池上安裝有電力傳輸端子，藉由焊接來使該電力傳輸端子 與導線連接。於該導線上配置有包含EVA的接著性樹脂、 及經切口加工的作為背面保護構件的鋼板。 導線於背面保護構件的缺口部，經由背面保護構件的 側面而抽出至背面保護構件的非受光面側。抽出至背面保 護構件的非受光面的導線是以如下的方式來配線，即，導 入至配設於該背面保護構件的非受光面的端子箱，並配線 成能夠進行外部輸&。如此，於專散獻丨巾，端子箱亦 配置於太陽電池模組的背面側。 此外，於專利文獻2所揭示的太陽電池模組中，於背 面加強板上的連接部處，藉由蟬接來將内部導線與纔線予 以連接料線將太陽電池觀所發出的電力引導至 201119064 一一 — 端子部為止，上述纜線用以將該電力傳輸至太陽電池模組 的外部。上述纜線由背面加強板的表面的成形為圓筒狀的 樹脂所固技。於專敎獻2的太㈣池模財，該樹脂 作為端子部而發揮魏。如此’於專利文獻2中，作為端 子部而發揮功能的樹脂亦配置於太陽電池模組的背面側。 [先行技術文獻] [專利文獻] [專利文獻1]曰本專利第3972245號公報 [專利文獻2]曰本專利特開2〇〇6_2丨〇446號公報 如上所述，先前的太陽電池模組1〇〇的電極傳輸如圖 11 (b)、® 11⑷所不’藉由焊接等來將金屬帶等連接 於太陽電池子模組102兩端的端子部分，隔著隱層1〇6 及後罩薄片11G等的絕緣層而折回地連接於接電箱112。 因此’需要用作自兩端的端子部分直至接電箱112為 止的配線122的金屬帶的材料’成本增加，並且該金屬帶 會由於侵人的水分等㈣到_，此亦 降的要因之一。 J非此r 此外，如圖10及圖11 (d)所示，當以後罩薄片110 等來覆蓋上述配線122時’必須將太陽電池子模电1〇 背面腿的整個面料覆蓋，後罩料u 模組100的成本增加。 電池 :且，如圖11⑴所示，由於太陽電池子模組102 的配線122折回地形成於背面1〇孔側，因此會 此成為使加工成本增加的一個要因。 201119064 根據太陽電池模組的薄型化的觀點，配線122的折回 部分、及通常安裝於太陽電池模組100的後罩薄片丨1〇二 中央部附近的接電箱112的部分會導致模組厚度增大，且 厚度會變得不均一等，從而會導致附加價值減小。 又，於專利文獻1及專利文獻2中，端子箱、端子部 設置於太IW電池模組的背面，太陽電池模組的厚度變厚， 而且由於端子箱、端子部突出，因此，厚度亦不均一。此 會導致附加價值減小。 對於太陽電池模組而言，存在如下的問題點：若模组 #度厚’貝彳不適合於BIPV (Building Integmted201119064 VI. Description of the Invention: [Technical Field] The present invention relates to a low-cost (C0St) and highly reliable photoelectric conversion device, and more particularly to a method for using a good conductor portion of a substrate for an electrode Photoelectric conversion device. [Prior Art] At present, research on solar cells is widely prevalent. A solar cell module constituting a solar cell includes a solar cell sub-module in which a plurality of photovoltaic elements having a laminated structure are connected in series on a substrate. The photoelectric conversion element of the laminated structure is a back surface. The electrode (lower electrode) and the transparent electrode (upper electrode) sandwich a photoelectric conversion layer of a semiconductor that generates a current due to light absorption. For example, a solar cell sub-module as shown below has been proposed. As shown in FIG. 10, in the solar cell module, a glass substrate 1〇4 is disposed on the back surface of the solar cell sub-module 102 on the opposite side of the glass substrate 104 of the solar cell sub-module 102. A cover glass 108 is attached by an Ethylene Vinyl Acetate (EVA) resin layer (ethylene vinyl acetate resin layer) 1〇6 which functions as a sealing adhesive layer. Further, a back sheet 110 is attached to the back side of the glass substrate 1〇4 by the EVA resin layer 106. Further, on the back cover sheet 110, a power box 112 for connecting internal wiring drawn from the solar battery sub-module 102 is attached. A cable 114 is disposed on the power box 112, whereby the solar battery module 201119064 100 can be connected to the outside. Further, in a state where the cover glass 108 and the back cover sheet 110 are attached to the solar cell sub-module 102 and the glass substrate 1 4, the cover glass 108 and the back cover sheet 110 are fixed to a frame 118 via a seal material 116. Further, in the solar battery module 1A, there is also a solar battery module in which the glass substrate 104 is not provided and a protective layer is provided instead of the cover glass 108. For example, the solar battery module 100 is manufactured in the manner shown in Figs. 11(a) to 11(d). First, as shown in FIG. 11(a), a solar cell sub-module 102 in which a plurality of photoelectric conversion elements having a laminated structure are connected in series on a surface of a substrate is prepared, and the photoelectric conversion element of the laminated structure is a back electrode. A photoelectric conversion layer of a semiconductor that generates a current due to light absorption is sandwiched between the transparent electrodes. Next, as shown in Fig. 11 (b), for example, wirings 120 using copper foil are provided at the terminals of the respective electrodes at both end portions of the solar cell sub-module 1〇2. Next, a wiring 122 is provided which is folded back from the wirings 120 at both ends to the back surface 102b of the solar battery sub-module 1A2 and extends to the substantially central portion of the solar battery sub-module 102. This wiring 122 is composed of, for example, a ribbon. Next, as shown in FIG. 11(c), the EVA resin layer 1〇6 and the cover layer 124 are disposed on the surface 1〇2a side of the solar cell sub-module 1 ,2, and the EVA resin layer 106 and the back cover sheet 11 are placed. It is disposed on the side of the back surface 102b of the solar cell sub-module 1〇2. At this time, the wiring 122 protrudes from the hole (not shown) of the EVA tree 201119064 grease layer 106 and the back cover sheet 110 provided on the back side. In this state, the above members are integrated by a vacuum lamination method. Then, trimming processing is performed, and then the wiring 122 protruding from the back cover sheet 110 is folded back, and the wiring 122 is connected to the power box Π2 as shown in (1), and then an adhesive or the like is used. In addition to the solar cell sub-module, various solar cell sub-modules have been proposed in addition to the above-described solar cell sub-module (see Patent Document 1 and Patent Document 2). In the solar cell module, a surface protective member containing Ethylene Tetrafluoroethylene 'ETFE and an adhesive resin containing EVA (ethylene vinyl acetate) are superposed, and the solar cell is placed thereon. a power transmission terminal is mounted on the solar cell, and the power transmission terminal is connected to the wire by soldering. The wire is provided with an adhesive resin containing EVA and a slit-processed back surface protection member. The wire is drawn out to the non-light-receiving surface side of the back surface protection member via the side surface of the back surface protection member through the notch portion of the back surface protection member. The lead wire of the non-light-receiving surface of the protective member is wired so as to be introduced into a terminal box disposed on the non-light-receiving surface of the back surface protective member, and wired so as to be capable of externally transmitting and discharging. The terminal box is also disposed on the back side of the solar cell module. Further, in the solar cell module disclosed in Patent Document 2, the internal wires are connected by splicing at the connection portion of the back reinforcing plate. The wire is connected to the wire to guide the power generated by the solar cell to the terminal portion of the 201119064 one-to-one terminal, and the cable is used to transmit the power to the outside of the solar cell module. The cable is provided by the back reinforcing plate. The surface is formed by a resin having a cylindrical shape. The resin is used as a terminal portion in the Tai (4) pool model, which is dedicated to the second. It is also disposed on the back side of the solar cell module. [Prior Art Document] [Patent Document] [Patent Document 1] Japanese Patent No. 3972245 [Patent Document 2] Japanese Patent Laid-Open No. 2〇〇6_2丨〇446 As described above, the electrode transfer of the previous solar cell module 1〇〇 is as shown in FIGS. 11(b) and 11(4), and the metal strip or the like is connected to the terminal portions at both ends of the solar cell sub-module 102 by soldering or the like. It is connected back to the power receiving box 112 via an insulating layer such as the hidden layer 1〇6 and the back cover sheet 11G. Therefore, it is necessary to use the metal strip of the wiring 122 from the terminal portion of the both ends up to the power box 112. The material 'cost increases, and the metal strip will be one of the factors due to invasive moisture, etc. (4) to _. This is not the case. J is not further r, as shown in Figure 10 and Figure 11 (d), when the cover sheet is When 110 or the like is used to cover the above-mentioned wiring 122, it is necessary to cover the entire fabric of the back side of the solar cell, and the cost of the rear cover u module 100 is increased. Battery: As shown in Fig. 11 (1), since the wiring 122 of the solar battery sub-module 102 is folded back on the side of the back surface 1 of the back surface, it is a factor that increases the processing cost. 201119064 According to the thinning of the solar cell module, the folded portion of the wiring 122 and the portion of the electrical box 112 that is usually mounted near the central portion of the rear cover sheet 太阳1〇2 of the solar cell module 100 may result in the thickness of the module. Increases, and the thickness becomes uneven, resulting in a decrease in added value. Further, in Patent Document 1 and Patent Document 2, the terminal box and the terminal portion are provided on the back surface of the Tai IW battery module, the thickness of the solar battery module is increased, and the terminal box and the terminal portion are protruded, so the thickness is not Uniform. This will result in a reduction in added value. For the solar cell module, there is the following problem: If the module #度厚' Bellow is not suitable for BIPV (Building Integmted

Ph0t0V0ltaic ··建材一體型）模組’難以實現高附加價值化， 而且若厚度不均一，則於運送時需要間隔件（spa⑻，導 致運送成本增加’㈣導致太陽電池模_成加。 【發明内容】 本發明的目的在於解決基於上述先前技術的問題點， 且提供-種配線構造鮮且可紐高的光電變換裝置。 本發明的其他目的在於提供―種可降低材料成本及加 工成本的光電變換裝置。 為了實現上述目的，本發明提供—種光電變換裝置， 在於包f金屬基板，形翁作為電導體而發揮作 以及於該導體部的至少表面上之電的絕緣層； „件(device)’形成於上述絕緣層上；第i導電 ^ ^接於上述光電變換器件的正極及負極中的一個電 且將上述光電變換器件的輪出自上述一個電極傳輸至 201119064 ，部；接㈣’將上述光換科的上述負極及上述正 極的另-個電極連接於上述金屬基板的導體部；以及第^ 導電構件’以經由上述金屬基板的上料體部及上述接 部而與上述另-個電極導通的方式，直接或地連接於 上述金屬基板的上述導體部，且將上述輸出自上述另一個 電極經由上述金屬基板的上述導體部及上述接電部而傳 至外部，上述第2導電構件連接於上述金屬基板的上述導 體部的一個位置。 於該情形時’較佳為上述第i導電構件與上述第 電構件相接近地設置著。 此外，較佳為上述金屬基板於上述導體部的端部未形 成有上述絕緣層’上述另—個電極藉由上述接電部而連接 於上述導體部的上述端部。 而且較佳為，上述金屬基板為大致矩形，於上述金屬 基板的至>、2邊的端部設置有與上述導體部導通的電導 體’上述第2導電構件連接於上述電導體，且經由上述電 導體而與上述導體部導通。 此外，於本發明中，較佳為上述金屬基板為大致矩形， 於上述金屬基板的至少2邊的端部設置有未形成有上述絕 緣層的上述導體部的區域，上述第2導電構件直接地連接 於上述導體部的區域。 並且’較佳為上述金屬基板為大致矩形，上述光電變 換器件包括與上述金屬基板的邊平行的上述正極及上述負 極，上述正極及上述負極的長度為上述金屬基板的邊的長 201119064 度的1/2以上。 基板的相對向的屬基板為大致矩形’於上述金屬 =件_::===:= 述貞極的上述另—㈣極於 2邊中的-邊的上述導體部，上= 部，上述的2邊的上述另—邊的上述導體 及電變換詩的上述另''個電極經由上述接電部 “金屬基板的上述導體部而與上述第2導電構件導 電變換^ ί為上述光換时串聯地連接有多個光 負極或上、/自上述第2導電構件傳輸至上述外部的上述 的光中的電位是與上述光電變換器件内的全部 的光電變換70件的最高電位大致一致。 =所明光輕鋪件⑽全部的光電變換元件的 電變換器件的設計上達到正極性的最大 ^的心。所謂該光電變換元件的最高電位，例如於太 =池模組的情科，相#於多個串聯連接的光電變換元 正極或負極的最端部的光電變換元件的正極或負極。 除此之外，上述光學變換器件較佳為串聯地連接有多 固太陽電池單元（eel1)的積體型的光學變換器件。 此外’例如，電變㈣件包括舰型太陽電池 單7C。 此外，上述光電變換器件較佳為包括CIS系薄膜型太 201119064 陽電池單、CIGS系薄膜型太陽電池單元、薄膜矽 (silicon)系薄膜型太陽電池單元、CdTe系薄膜型太陽電 池單元、11=屬系薄麵太陽電池單元、祕敏化系薄膜 型太陽電池單元、以及有機㈣膜型太陽電池單元中的任 一個薄膜型太陽電池單元。 此外’上述光電變換器件較佳為包括基板（論她） 型構造的薄膜型太陽電池單元。 此外，上述金屬基板較佳為於兩個面或單面形成有絕 緣層。 此外，於本發明中，上述絕緣層較佳為由包含氧化紹、 氧化矽及樹脂中的至少一種物質的層所構成。 此外，上述金屬基板的主成分較佳為鋁。 此外，上述金屬基板較佳為包括不軸（咖^ steel)板或鋼板。 此外，上述金屬基板較佳為包括至少表面被銘所覆蓋 的不鏽鋼板或鋼板。 此外’上述絕緣層較佳為由陽極氧化銘所構成。 [發明的效果] 根據本發明的光電變換裝置，可將金屬基板的導體部 作為導體來通電，當傳輸來自正極或負極的輸㈣，不會 將兩個極性中的正極或負極側轉得較長，從而可將配線 ^造予以，。因此，可使光電變換裝置整體的配線長度 縮短。藉此，可抑制配線所耗費的材料費U，亦可使 加工費等的成本降低。 12 201119064 =外，根據本發明的光電變換裝置，將光電變換裝置 與2卜。卩予以連接的接電箱的位置亦可位於光電變換裝置的 端邰，可使由薄型化、厚度的均一化產生的附加價值升高， 從而具有更高的可靠性。 ^為讓本發明之上述和其他目的、特徵和優點能更明顯 易隱，下文特舉較佳實施例，並配合所附圖式，作詳細說 明如下。 【實施方式】 以下，根據於所附圖式所示的實施形態來詳細地對本 發明的光電變換裝置進行說明。 日圖1是表示本發明的光電變換裝置的第i實施形態的 太％電池子模組的模式性剖面圖。 於本實施形態中，作為光電變換裝置，以太陽電池子 模組為例來進行綱。再者，於本發明中，光電變換裝置 並不限定於太陽電池子模組。 ^ 如圖1所示，本發明的第1實施形態的太陽電池子模 組10例如包括大致長方形狀的金屬基板12。該金屬基板 12例如是以不鏽鋼板（相當於本發明的導體部）Μ為芯 材’且於該不鏽鋼板14的表® 14a及背® 14b形成有^ (aluminum)層（相當於本發明的導體部）〗6、口。因此， 金屬基板12的表面及背面分別成為鋁層16、17的表面。 於該金屬基板；12的銘層16、17分別形成有絕緣層 18、19，於金屬基板12的兩個面形成有絕緣層i8、19。 該絕緣層18並未形成於表面側的結層16的兩端部恤、 201119064 16b。又’絕緣層19亦並未形成於背面側的鋁層π的兩端 部 17a、17b。 可於形成絕緣層18、19之後，例如藉由雷射切割（laser scribe)來將絕緣層18、19予以除去’藉此來形成如上所 述的未形成有絕緣層18、19的區域。 而且’當藉由陽極氧化來形成絕緣層18、19時，可將 金屬基板12的兩端部及侧面部加以遮檔（mask)而形成 不會形成有絕緣層18、19的區域。 於本實施形態中，例如，多個後述的光電變換元件（相 當於本發明的太陽電池單元）3〇串聯連接地形成於絕緣層 18的表面18a。藉由多個串聯連接的光電變換元件3〇來構 成所謂的積體型的光電變換器件31。 圖1所不的太陽電池子模組1〇稱為基板型太陽電池子 模、、且叹置於g太陽電池子模組1()的後述的光電變換元件 30為薄膜光電變換元件。社陽電池子模組 10於絕 18的表Φ 18a依序積層有背面電極20、20a、光電變 而=2、緩衝（buffer)層24、以及透明電極％，藉由背 26^ ^咖、光電變換層22、緩衝層24 *透明電極 26來構成光電變換元件3〇。 因此要由於僅配置不同而_ ㈣二則不作區分地均視為背面電極20。 槽（Pl )23，且與相鄰的背面電極2〇之間設置有分離 ^電㈣ja 面電極20形成於絕緣層18的表面18a。 先電變換層22填埋分離槽⑻23且形成於背面電極20 201119064 上。於該光電變歸22的表㈣成 電變換層22與緩衝層24藉由到 W 24把一尤 稭由到達I面電極2G為止的槽 (P2) 25而與其絲電變換層22及 (P2) 25形成於與背面電極2〇 s 24刀離補 位置。 的刀離槽⑻23不同的 衝層表t電極26填埋上述槽（P2)25且形成於緩 形成有將透明電極26、緩衝層24及 以貫穿且到達背面電極20的開口槽(p3)電27變奐各曰光電二 換το件30藉由背面電極20與透明電極％ 聯連接著。 於本實施形態中’目1所示的左_端部的背面電極21 連接於未形成有絕緣層18的端部16b，背面電極21與金 屬基板12導通。該背面電極21相#於本發接電部。 本實施形態的光電變換元件30稱為積體型的〇(^系 光電變換元件（CIGS系太陽電池單元），例如，背面電極 20由翻（molybdenum)電極所構成，光電變換層22由aGs 所構成’緩衝層24由CdS所構成，透明電極26由z 所構成。 再者，光電變換元件30雖未圖示，但該光電變換元件 30平行於金屬基板12的邊，且於一個方向上較長。因此 背面電極21等亦為平行於金屬基板12的邊且於一個方 上較長的電極。 ° 如圖1所示，第1導電構件32連接於光電變換元件 30的透明電極26的表面26a ’該光電變換元件3〇形成於The Ph0t0V0ltaic ··building materials integrated type module' is difficult to achieve high added value, and if the thickness is not uniform, a spacer (spa (8) is required for transportation, resulting in an increase in transportation cost' (4), causing the solar cell module to be added. An object of the present invention is to provide a photoelectric conversion device which is based on the above-mentioned prior art and which provides a wiring structure which is fresh and can be high. Another object of the present invention is to provide a photoelectric conversion which can reduce material cost and processing cost. In order to achieve the above object, the present invention provides a photoelectric conversion device in which a metal substrate is packaged, and the shape serves as an electrical conductor and functions as an electrical insulating layer on at least a surface of the conductor portion; Forming on the insulating layer; the ith conductive electrode is connected to one of the positive electrode and the negative electrode of the photoelectric conversion device and transmits the wheel of the photoelectric conversion device from the one electrode to the 201119064, and the fourth electrode The negative electrode of the optical switch and the other electrode of the positive electrode are connected to the conductor portion of the metal substrate; and The electric component 'directly or indirectly connected to the conductor portion of the metal substrate via the upper body portion and the connecting portion of the metal substrate and electrically connected to the other electrode, and outputs the output from the other electrode The second conductive member is connected to one position of the conductor portion of the metal substrate via the conductor portion and the power receiving portion of the metal substrate, and the second conductive member is connected to one position of the conductor portion of the metal substrate. In this case, the ith conductive member is preferably Further, the first electrical member is disposed adjacent to the conductor portion. Preferably, the metal substrate is not formed with the insulating layer at an end portion of the conductor portion. The other electrode is connected to the conductor portion by the power receiving portion. Preferably, the metal substrate is substantially rectangular, and an electric conductor that is electrically connected to the conductor portion is provided at an end of the metal substrate to the side of the two sides. The second conductive member is connected to the electric portion. The conductor is electrically connected to the conductor portion via the electric conductor. Further, in the invention, it is preferable that the metal substrate is substantially rectangular and upper. At least two end portions of the metal substrate are provided with a region where the conductor portion of the insulating layer is not formed, and the second conductive member is directly connected to a region of the conductor portion. Further, it is preferable that the metal substrate is substantially rectangular. The photoelectric conversion device includes the positive electrode and the negative electrode parallel to the side of the metal substrate, and the length of the positive electrode and the negative electrode is 1/2 or more of the length of the side of the metal substrate of 201119064 degrees. The relative substrate of the substrate It is substantially rectangular 'in the above metal=piece _::===:= the above-mentioned other of the 贞- (4) the above-mentioned conductor part of the - edge of the two sides, the upper part, the above two sides of the above two The side conductor and the other electrode of the electric conversion poem are connected in series to the second conductive member via the power receiving portion "the conductor portion of the metal substrate". The potential of the negative electrode or the above-described light transmitted from the second conductive member to the outside is substantially the same as the highest potential of all of the photoelectric conversion devices 70 in the photoelectric conversion device. = The electrotransformation device of all the photoelectric conversion elements of the light-lighting member (10) is designed to achieve the maximum ^ of the positive polarity. The highest potential of the photoelectric conversion element is, for example, the erroneous or the negative electrode of the photoelectric conversion element at the extreme end of the positive electrode or the negative electrode of the plurality of photoelectric conversion elements connected in series. In addition to the above, the optical conversion device is preferably an integrated optical conversion device in which a plurality of solid solar cells (eel1) are connected in series. In addition, for example, the electric (four) pieces include the ship type solar battery unit 7C. Further, the photoelectric conversion device preferably includes a CIS-based film type 201119064 positive battery unit, a CIGS-based thin film type solar battery unit, a thin film silicon-based film type solar battery unit, and a CdTe-based thin film type solar battery unit, 11= Any one of a thin-film solar cell unit, a sensitized thin film type solar cell unit, and an organic (four) film type solar cell unit. Further, the above-mentioned photoelectric conversion device is preferably a thin film type solar cell unit including a substrate (on her) type structure. Further, it is preferable that the metal substrate has an insulating layer formed on both surfaces or on one side. Further, in the invention, it is preferable that the insulating layer is composed of a layer containing at least one of oxidized cerium, cerium oxide and a resin. Further, the main component of the metal substrate is preferably aluminum. Further, the metal substrate preferably includes a non-axial plate or a steel plate. Further, the above metal substrate preferably includes a stainless steel plate or a steel plate having at least a surface covered with the name. Further, the above insulating layer is preferably composed of anodized. [Effects of the Invention] According to the photoelectric conversion device of the present invention, the conductor portion of the metal substrate can be energized as a conductor, and when the input (four) from the positive electrode or the negative electrode is transmitted, the positive electrode or the negative electrode side of the two polarities are not turned. Long, so that the wiring can be made. Therefore, the wiring length of the entire photoelectric conversion device can be shortened. Thereby, the material cost U which is consumed by the wiring can be suppressed, and the cost of processing costs and the like can be reduced. 12 201119064 = In addition, according to the photoelectric conversion device of the present invention, the photoelectric conversion device is used. The position of the electrical connection box to which the 卩 is connected may also be located at the end of the photoelectric conversion device, so that the added value resulting from the thinning and uniform thickness can be increased, thereby achieving higher reliability. The above and other objects, features, and advantages of the present invention will become more apparent from the aspects of the appended claims. [Embodiment] Hereinafter, a photoelectric conversion device of the present invention will be described in detail based on an embodiment shown in the drawings. Fig. 1 is a schematic cross-sectional view showing a solar cell sub-module according to an i-th embodiment of the photoelectric conversion device of the present invention. In the present embodiment, a solar cell sub-module is taken as an example of the photoelectric conversion device. Furthermore, in the present invention, the photoelectric conversion device is not limited to the solar cell sub-module. As shown in Fig. 1, the solar battery sub-module 10 according to the first embodiment of the present invention includes, for example, a substantially rectangular metal substrate 12. The metal substrate 12 is, for example, a stainless steel plate (corresponding to the conductor portion of the present invention) as a core material, and an aluminum layer is formed on the surface of the stainless steel plate 14 and the back layer 14b (corresponding to the present invention) Conductor)) 6, mouth. Therefore, the front and back surfaces of the metal substrate 12 become the surfaces of the aluminum layers 16, 17. Insulating layers 18 and 19 are formed on the inscription layers 16 and 17 of the metal substrate 12, respectively, and insulating layers i8 and 19 are formed on both surfaces of the metal substrate 12. The insulating layer 18 is not formed on both ends of the knot layer 16 on the front side, 201119064 16b. Further, the insulating layer 19 is not formed on both end portions 17a and 17b of the aluminum layer π on the back side. After the insulating layers 18, 19 are formed, the insulating layers 18, 19 are removed, for example, by laser singing, whereby regions such as the insulating layers 18, 19 which are not formed as described above are formed. Further, when the insulating layers 18 and 19 are formed by anodization, both end portions and side surface portions of the metal substrate 12 can be masked to form regions in which the insulating layers 18 and 19 are not formed. In the present embodiment, for example, a plurality of photoelectric conversion elements (corresponding to the solar battery cells of the present invention) to be described later are formed in series on the surface 18a of the insulating layer 18. A so-called integrated photoelectric conversion device 31 is constructed by a plurality of photoelectric conversion elements 3 连接 connected in series. The solar cell sub-module 1 shown in Fig. 1 is referred to as a substrate type solar cell sub-module, and the photoelectric conversion element 30, which will be described later, which is slid into the g solar cell sub-module 1 (), is a thin film photoelectric conversion element. The social solar battery sub-module 10 sequentially has a back electrode 20, 20a, a photoelectric change = 2, a buffer layer 24, and a transparent electrode % on the surface Φ 18a of the absolute 18, by the back 26 ^ ^ coffee, The photoelectric conversion layer 22, the buffer layer 24, and the transparent electrode 26 constitute a photoelectric conversion element 3A. Therefore, since only the configuration is different, _ (four) and two are regarded as the back electrode 20 without distinction. The groove (P1) 23 is provided with a separation from the adjacent back electrode 2A. The electric (four) ja surface electrode 20 is formed on the surface 18a of the insulating layer 18. The electroconversion layer 22 fills the separation trench (8) 23 and is formed on the back surface electrode 20 201119064. In the table (4) of the photoelectric conversion 22, the electric conversion layer 22 and the buffer layer 24 are connected to the ferroelectric conversion layer 22 and (P2) by a groove (P2) 25 reaching the I-side electrode 2G by W24. 25 is formed at a position offset from the back electrode 2〇s 24 knife. The squeegee is different from the groove (8) 23, and the t-electrode 26 fills the groove (P2) 25 and is formed in the open groove (p3) in which the transparent electrode 26, the buffer layer 24, and the back surface electrode 20 are penetrated and formed. 27 奂 奂 曰 曰 曰 τ 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 In the present embodiment, the back electrode 21 of the left end portion shown by the head 1 is connected to the end portion 16b where the insulating layer 18 is not formed, and the back surface electrode 21 is electrically connected to the metal substrate 12. The back electrode 21 phase # is connected to the power receiving portion of the present invention. The photoelectric conversion element 30 of the present embodiment is referred to as an integrated type of photoelectric conversion element (CIGS type solar cell). For example, the back surface electrode 20 is composed of a molybdenum electrode, and the photoelectric conversion layer 22 is composed of aGs. The buffer layer 24 is composed of CdS, and the transparent electrode 26 is composed of z. Further, although the photoelectric conversion element 30 is not shown, the photoelectric conversion element 30 is parallel to the side of the metal substrate 12 and is long in one direction. Therefore, the back surface electrode 21 and the like are also electrodes which are parallel to the side of the metal substrate 12 and are longer on one side. ° As shown in Fig. 1, the first conductive member 32 is connected to the surface 26a of the transparent electrode 26 of the photoelectric conversion element 30. 'The photoelectric conversion element 3〇 is formed on

_S 15 201119064 構面電極2加上。如下所述，上述第1導電 第1以將來自負極的輸出傳輸至外部。 件32平〃導電構件32為細長的帶狀的構件’該第1導電構 、查垃於金屬基板12的邊地沿著一個方向延伸而受到 、於第1導電構件32而言，例如，銅帶32&由銦 件1合金的包覆材料32b所包覆。該第1導電構 明雪m藉由超音波焊接而連接於光1變換元件30的透 明電極26的表面26a。 端部’第2導電構件34連接於未形成有絕緣層18的 導i構二f 2導電構件34與金屬基板12導通。該第2_S 15 201119064 Facet electrode 2 plus. As described below, the first conductive first is used to transmit the output from the negative electrode to the outside. The member 32 of the flat conductive member 32 is an elongated strip-shaped member. The first conductive structure and the side of the metal substrate 12 are extended in one direction, and the first conductive member 32 is, for example, copper. The belt 32& is covered with a covering material 32b of an indium alloy 1 alloy. The first conductive structured snow m is connected to the surface 26a of the transparent electrode 26 of the light-converting element 30 by ultrasonic welding. The end portion 'the second conductive member 34 is connected to the conductive member 18, and the second f 2 conductive member 34 is electrically connected to the metal substrate 12. The second

Si t㈣面電極21與金屬基板12 (紹層“及不 構件34田）作為導體而予以連接。如下所述，該第2導電 %盘第！ 正極的輸㈣輸至外部。第2導電構件 第2、導雷^ 樣地亦為細長的帶狀的構件，該 =導電構件34平行於金屬基板12 延伸而受到連接。上述㈣電構件32與第：= 34相鄰接，且大致平行地配置著（參照圖6⑴）。 第2導電構件34為與第！導電構件以相 歹’如，鋼帶34a由銦銅合金的包覆材料3牝所包覆。 妙而第I導電構件32與第2導電構件34亦可為鍍錫銅帶。 然而，第1導電構件32及第2導電構件34久白二旬带 ，定於超音娜，例如，亦可使用物=亦 導電性膠帶（tape)來進行連接。 接耆劑、 再者，本實施形態的光電變換元件3〇例如可藉由果所 201119064 周知的CIGS系的太陽電池的製造方法來製造。而且，可 藉由雷射切割或機械切割（mechanical scribe )來形成背面 電極20的分離槽（pl)23、到達背面電極20為止的槽（P2) 25、以及到達背面電極20的開口槽（P3) 27。 、光自透明電極26側入射至光電變換元件3〇之後，該 光通過透明電極26及緩衝層24,於光電變換層22中產生 士 例如產生自透明電極26流向背面電極20的電 流。再者，圖1所示的箭頭表示電流的流向，電子的移動 =向與電流的流向相反。因此，於圖i巾，左側的端部的 面電極21成為正極（p〇sitiveelectr〇de)，右側的端部的 背面電極20a成為負極（negative electr〇de)。 於本實施形態中’使背面電極21連接於金屬基板12 的銘層16,進而使第2導電構件34連接於金屬基板12的 =^。藉此’可將金屬基板12的紹層16及不鏽鋼板Μ 作為導體來使背面電極21與第2導電構件34之間導通。 又，將第1導電構件32連接於透明電極26。藉此，可 太陽電池子模組10所產生的電力自相鄰接的第丨導電構件 32與第2導電構件34傳輸至太陽電池子模組1〇的 再者，第1導電構件32為負極，第2導電構件34為正極。 又，第i導電構件32與第2導電構件34的極性亦可 可根據光電變換元件3〇的構成、场電軒触 等來適當地改變第1導電構件32與第2導電構件34的= 性0 此處’所謂太陽電池子模組 10的表面側，是指接收用The Si t (four) surface electrode 21 and the metal substrate 12 (the "layer" and the non-member 34 field) are connected as a conductor. As described below, the second conductive % disk of the positive electrode (four) is output to the outside. The second conductive member 2. The lightning guide is also an elongated strip-shaped member, and the conductive member 34 is connected in parallel to the metal substrate 12. The (four) electrical member 32 is adjacent to the first: 34 and is arranged substantially in parallel. (Refer to Fig. 6 (1)). The second conductive member 34 is coated with the second conductive member, for example, the steel strip 34a is covered with a clad material of an indium copper alloy. 2 The conductive member 34 may be a tin-plated copper strip. However, the first conductive member 32 and the second conductive member 34 are long-lasting, and are set to be super-tone, for example, can also be used = conductive tape (tape) In addition, the photoelectric conversion element 3 of the present embodiment can be produced, for example, by the method of manufacturing a CIGS-based solar cell known from the Japanese Patent No. 201119064. Moreover, it can be cut by laser or Mechanical scribe to form a separation groove of the back electrode 20 Pl) 23, a groove (P2) 25 reaching the back surface electrode 20, and an opening groove (P3) 27 reaching the back surface electrode 20. After the light enters the photoelectric conversion element 3A from the transparent electrode 26 side, the light passes through the transparent electrode. 26 and the buffer layer 24 generate, for example, a current flowing from the transparent electrode 26 to the back surface electrode 20 in the photoelectric conversion layer 22. Further, the arrow shown in Fig. 1 indicates the flow of current, and the movement of electrons = the direction of current flow On the other hand, in the figure i, the surface electrode 21 at the end portion on the left side becomes a positive electrode, and the back surface electrode 20a at the end portion on the right side becomes a negative electrode (negative electr). The back electrode 21 is connected to the inscription layer 16 of the metal substrate 12, and the second conductive member 34 is connected to the metal substrate 12. Thus, the layer 16 of the metal substrate 12 and the stainless steel plate can be used as conductors. The back surface electrode 21 and the second conductive member 34 are electrically connected to each other. The first conductive member 32 is connected to the transparent electrode 26. Thereby, the electric power generated by the solar battery sub-module 10 is transmitted from the adjacent second conductive member 32. And the second conductive member 3 4. Further, the first conductive member 32 is a negative electrode, and the second conductive member 34 is a positive electrode. Further, the polarity of the i-th conductive member 32 and the second conductive member 34 may be changed according to photoelectric conversion. The configuration of the element 3A, the field electric contact, etc., appropriately change the = property of the first conductive member 32 and the second conductive member 34. Here, the surface side of the so-called solar battery sub-module 10 means receiving.

S 17 201119064 以獲得電力的光的一側的面，所謂背面侧，是指 的相反侧。 θ述表面 於本實施形態中’第2導電構件34經由金屬義 而連接於串聯連接的光電變換元件30的正極側的^ ^ 光電變換元件30。因此’第2導電構件34連接於光^變 換器件31内的全部的光電變換元件30中的最高電位的 電變換元件。藉此’自第2導電構件34傳輸的電位為最言 電位。 同 於本實施形態中，將金屬基板12例如鋁層16及不鑛 鋼板14用作導體。金屬基板12為不鑛鋼板14與銘層16、 17的包層（clad)基板，但由於不鏽鋼板14及鋁層16、 17的導電率均足夠高，因此，太陽電池子模組1〇 ^產生 的電流不會被金屬基板12消耗。 如上所述，於本實施形態中，由於可自相鄰接的第i 導電構件32與第2導電構件34傳輸太陽電池子模組1〇 所產生的電力，因此，無需如先前般，使配線自設置於太 陽電池子模組的兩端的端子折回且牵繞至中央為止，而且 可使配線長度縮短。因此，可將配線構造予以簡化。藉此， 可抑制配線所耗費的材料費。而且，由於亦節省形成配線 時的工夫，因此，可使加工費及太陽電池模組鋪設作業費 等的成本降低。 此外’根據本實施形態，由於可將配線構造予以簡化， 因此’可使包括太陽電池子模組的太陽電池模組的品質及 可罪性提高。而且’由於可對相鄰接的第1導電構件32 201119064 與第2導電構件34進行轉，因此，亦可使太陽電池模組 的接電箱的安裝位置位於角部周邊，而非如先前般位於太 =電池模組的中央。因此，美觀性優異，可實現太陽電池 核組的高附加價值化。 如此，由於可使接電箱的安裝位置處於角部周邊因 此，藉由太陽電池模組的薄型化或厚度的均一化來實現高 寸加鉍值化，並且藉由薄型化或厚度的均一化來提高作業 性，從而實現高可靠性化。 /、 圖1所示的本實施縣社陽電池子觀1G例如可以 如下的方式來形成為太陽電池模組。 將密封接著層、水蒸氣阻障層（barrierlayer)(保 =表面_層（保制）配置於太陽電池層) 著層及後罩薄片_配置於太= 而實二上=側"物勤真空㈣絲储層壓加工 化，糟此來獲得太陽電池模组。 再者，預先於後罩薄片中設置孔，使第 ，導電構件34自後罩薄片突出且 電箱用以將太陽電池模組所獲 接，接 模、组10的外部。 设付幻兔力傅輸至太陽電池子 連接著供電纜線等，哕技雷Μ 樹脂密封之“二^ 該费封接著層例如可使用EVA (乙騎酸乙湘旨）或S 17 201119064 The side of the side that obtains the light of electricity, the so-called back side, refers to the opposite side. In the present embodiment, the second conductive member 34 is connected to the positive-electrode-side photoelectric conversion element 30 of the photoelectric conversion element 30 connected in series via metal. Therefore, the second conductive member 34 is connected to the highest potential electric conversion element among all the photoelectric conversion elements 30 in the optical conversion device 31. Thereby, the potential transmitted from the second conductive member 34 is the most potential. Also in the present embodiment, the metal substrate 12 such as the aluminum layer 16 and the non-mineral steel sheet 14 are used as conductors. The metal substrate 12 is a clad substrate of the non-mineral steel plate 14 and the inlaid layers 16, 17. However, since the electrical conductivity of the stainless steel plate 14 and the aluminum layers 16, 17 are sufficiently high, the solar cell sub-module 1 〇 ^ The generated current is not consumed by the metal substrate 12. As described above, in the present embodiment, since the power generated by the solar cell sub-module 1 传输 can be transmitted from the adjacent i-th conductive member 32 and the second conductive member 34, it is not necessary to make the wiring as before. The terminals provided at both ends of the solar cell sub-module are folded back and pulled to the center, and the wiring length can be shortened. Therefore, the wiring structure can be simplified. Thereby, the material cost for wiring can be suppressed. Further, since the time required for forming the wiring is also saved, the cost of the processing fee and the solar cell module installation work cost can be reduced. Further, according to the present embodiment, since the wiring structure can be simplified, the quality and the sin of the solar battery module including the solar battery sub-module can be improved. Moreover, since the adjacent first conductive member 32 201119064 and the second conductive member 34 can be rotated, the mounting position of the solar battery module can be placed around the corner instead of the previous one. Located in the center of the battery module. Therefore, it is excellent in aesthetics and can realize high added value of the solar cell core group. In this way, since the mounting position of the electrical box can be made at the periphery of the corner portion, the thickness of the solar cell module can be reduced by the thinning or uniformity of the thickness, and the thickness can be made thinner or uniformized by thickness. To improve workability and achieve high reliability. The solar cell sub-view 1G of the present embodiment shown in Fig. 1 can be formed into a solar cell module as follows, for example. Sealing the backing layer, water vapor barrier layer (protection = surface layer (protected) in the solar cell layer) layer and back cover sheet _ arranged in too = and the real two = side "quote The vacuum (four) wire storage laminate is processed, and the solar cell module is obtained. Further, a hole is provided in the back cover sheet in advance so that the first conductive member 34 protrudes from the rear cover sheet and the electric box is used to receive the solar battery module, and the outside of the mold 10 is assembled. Set the Fantasy rabbit force to the solar cell, connect the cable for the cable, etc., and use the EVA (Ethylene Acetate)

S 19 201119064 ^r~r X4t· 聚乙烯縮丁搭（polyvinyl butyral，PVB )。 水蒸氣阻障層用以保護太陽電池子模組不受水分 的影響。關於該水蒸氣阻障層，可使用於聚對苯二甲酸乙 二醇酯（Polyethylene Terephthalate，PET)或聚蔡二甲酸 乙醇二酯（Polyethylene Naphthalate，PEN)等的透明薄膜 (film)上形成有包含Si〇2或SiN等無機層的水蒸氣阻障 層，或者可使用由PET或PEN等的透明薄膜來包夾著包 含Si〇2或SiN等無機層所構成的水蒸氣阻障層。 再者，對於水蒸氣阻障層而言，只要水蒸氣透過率、 氧透過率等滿足規定的性能，則該水蒸氣阻障層的構成並 無特別限定。 表面保護層保護太陽電池子模組10不受污垢等的影 響，並且抑制由污垢等引起的入射至太陽電池子模組10 的入射光量的下降。例如可使用氟系樹脂薄膜作為該表面 保護層。例如可使用ETFE (乙烯-四氟乙烯）作為該氟系 樹脂。其中，表面保護層的厚度例如為20μΙη〜2〇〇μιη。 設置於太陽電池子模組10的背面側的密封接著層為 與設置於表面側的密封接著層相同的構成，因此，省:其 詳細的說明。 ^後罩薄片自背側保護太陽電池子模組10。關於該後罩 薄片22 ’使用由pet或順等的樹脂薄膜來包炎著銘落 的構造的後罩薄片。再者，後罩薄片的構成亦無特別限定。 此外，於本實施形態中，如上所述，將芯材的不鑛鋼 板14與包覆層的銘層16、17的包層基板用作金屬基板 20 201119064 " χ-—— 12。例如可根據絕緣層及光電變換元件與材料特性，且 由應力計算結果來適當地選擇不鏽鋼板14<)為了對光電^ 換元件整體的熱膨脹係數進行控制，不鏽鋼板i 4例如可使 用沃斯田鐵（austenite )系不鏽鋼（熱膨脹係 Πχΐ〇·6ΐΑ：)、碳鋼及肥粒鐵（ferrite (10χ10·61 广C)。 又’對於金屬基板12而言，除了可使用不鏽鋼板14 作為芯材以外，例如亦可使用包含軟鋼等的鋼、42鎳鐵么 金（invar alloy)、科伐合金（k〇var alloy) (5xl〇-6i^c )、 或36鎳鐵合金（<lxl〇-61/t：)的板材作為芯材。 於光電變換元件的製造過程（process)中，可根據工 作時的操作（handling)性（強度與可撓性）來任意地設 定不鏽鋼板14的厚度，但該不鏽鋼板η的厚度較佳為1〇 μιη 〜1 mm。 由於不發生塑性變形的彈性極限應力重要，因此，藉 由屈服應力（yield stress)或0.2%耐力值來定義不鏽鋼板 14的剛性。不鏽鋼板14的〇 2%耐力值及其溫度相依性記 載於日本金屬學會、日本鋼鐵協會編寫的丸善株式會社的 「鐵鋼材料手冊」’或記載於不鏽鋼協會編寫的日刊工業報 社的「不鏽鋼手冊（第3版）」中。雖亦取決於鋼的機械加 工度與熱精煉（thermal refining)，但不鏽鋼板14的0.2% 财力值於室溫時較佳為250 MPa〜900 MPa。而且，於光電 變換I置中的光電變換元件（光電變換器件）的製造過程 中’達到50(TC以上的高溫，但鋼於50CTC時的耐力一般維 21 201119064 持為70%左右。另一方面，鋁於室溫時的耐力亦取決於機 械加工度與熱精煉，該耐力值為300 MPa以上，但於350°C 以上時會下降至1/10以下。因此，對於高溫時的金屬基板 12的彈性極限應力及熱膨脹而言，不鏽鋼板14的高溫特 性成為主導因素。應力計算所需的鋁與不鏽鋼的楊氏模量 (Young’s modulus)及其溫度相依性記載於曰本機械學會 的「金屬材料的彈性係數」中。 於鋁層16、17中，例如可使用曰本工業標準（JapaneseS 19 201119064 ^r~r X4t· Polyvinyl butyral (PVB). The water vapor barrier layer protects the solar cell sub-module from moisture. The water vapor barrier layer can be formed on a transparent film for polyethylene terephthalate (PET) or polyethylene naphthalate (PEN). A water vapor barrier layer containing an inorganic layer such as Si〇2 or SiN may be used, or a water vapor barrier layer composed of an inorganic layer such as Si〇2 or SiN may be sandwiched between a transparent film such as PET or PEN. In addition, the water vapor barrier layer is not particularly limited as long as the water vapor transmission rate, the oxygen permeability, and the like satisfy a predetermined performance. The surface protective layer protects the solar cell sub-module 10 from dirt and the like, and suppresses a decrease in the amount of incident light incident on the solar cell sub-module 10 due to dirt or the like. For example, a fluorine-based resin film can be used as the surface protective layer. For example, ETFE (ethylene-tetrafluoroethylene) can be used as the fluorine-based resin. The thickness of the surface protective layer is, for example, 20 μΙη to 2〇〇μιη. The sealing adhesive layer provided on the back side of the solar cell sub-module 10 has the same configuration as the sealing adhesive layer provided on the front surface side, and therefore, a detailed description thereof will be given. The back cover sheet protects the solar cell sub-module 10 from the back side. Regarding the back cover sheet 22', a back cover sheet having a structure in which a resin film of a pet or a cistern is embossed is used. Further, the configuration of the back cover sheet is not particularly limited. Further, in the present embodiment, as described above, the clad substrate of the core material of the non-mineral steel sheet 14 and the cladding layers 16 and 17 of the cladding layer is used as the metal substrate 20 201119064 " χ-- 12. For example, the stainless steel plate 14 can be appropriately selected according to the insulating layer and the photoelectric conversion element and the material characteristics, and the stress calculation result can be appropriately selected.) In order to control the thermal expansion coefficient of the entire photoelectric conversion element, the stainless steel plate i 4 can be, for example, Worthfield Iron (austenite) is stainless steel (thermal expansion system ΐΑ6ΐΑ:), carbon steel and ferrite iron (ferrite (10χ10·61 广C). Also for metal substrate 12, in addition to stainless steel plate 14 can be used as the core material In addition, for example, steel containing mild steel, 42 invar alloy, k〇var alloy (5xl〇-6i^c), or 36 nickel-iron alloy (<lxl〇- The plate material of the 61/t:) is used as a core material. In the manufacturing process of the photoelectric conversion element, the thickness of the stainless steel plate 14 can be arbitrarily set according to the handling property (strength and flexibility) at the time of operation. However, the thickness of the stainless steel plate η is preferably 1 μm η 〜1 mm. Since the elastic limit stress which does not undergo plastic deformation is important, the rigidity of the stainless steel plate 14 is defined by a yield stress or a 0.2% proof value. . The 〇2% endurance value of the stainless steel plate 14 and its temperature dependence are described in the "Steel Steel Material Handbook" of Maruzen Co., Ltd., prepared by the Japan Institute of Metals and the Japan Iron and Steel Association, or the "Stainless Steel Handbook" published by the Stainless Steel Association. (3rd edition)". Although it depends on the mechanical degree of steel and thermal refining, the 0.2% financial value of stainless steel plate 14 is preferably 250 MPa to 900 MPa at room temperature. In the manufacturing process of the photoelectric conversion element (photoelectric conversion device) in the photoelectric conversion I, the temperature reaches 50 (the high temperature of TC or higher, but the endurance of the steel at 50 CTC is generally about 70% for the 2011 21,064,600. On the other hand, the aluminum is The endurance at room temperature also depends on the degree of machining and thermal refining, which is 300 MPa or more, but drops below 1/10 at 350 ° C. Therefore, the elastic limit of the metal substrate 12 at high temperatures In terms of stress and thermal expansion, the high temperature characteristics of the stainless steel plate 14 are the dominant factor. The Young's modulus and temperature dependence of the aluminum and stainless steel required for stress calculation are described in 曰"Modulus of elasticity of a metal material" in Society of Mechanical Engineers. 16, 17 in the aluminum layer, for example using said Industrial Standard (Japanese

Industrial Standards ’ JIS )的 looo 系純 A1_Mn 系合金、Industrial Standards ’ JIS ) looo is a pure A1_Mn alloy,

Al-Mg系合金、Al-Mn-Mg系合金、Αι·Ζγ系合金、A1_Si 系合金、及Al-Mg-Si系合金等的A1與其他金屬元素的合 金（參照「鋁手冊第4版」（ 1990年，輕金屬協會發行 於銘層16、17中亦可包含Fe、si、Mn、Cu、Mg、Cr、Alloys of A1 and other metal elements such as Al-Mg alloy, Al-Mn-Mg alloy, Αι·Ζγ alloy, A1_Si alloy, and Al-Mg-Si alloy (refer to "Aluminum Handbook 4th Edition") (In 1990, the Light Metals Association published in the Ming layer 16, 17 may also contain Fe, Si, Mn, Cu, Mg, Cr,

Zn、Bi、Ni、及Ti等的各種微量金屬元素。 鋁層16、17的厚度可根據光電變換裝置的整體的層構 成與材料特性’且藉由應力計算結果來適當地選擇但對 於作為金屬基板12的形體而言，該紹層16、17的厚度為 〜500 μιη。銘層16、17介於不鏽鋼板14與包含陽 f乳化膜的絕緣層18、19之間，藉此，當由於溫度變化而 /生熱膨脹時，絕緣層18、19的應力受到緩和。再者，當 =成金屬基板12的絕緣層18、19時，銘層16、17的厚度 =會因陽極氧化及陽極氧化的事先清洗或研磨而減少， ’必須預先設為預見了上述情況的厚度。 對於紹層16、17而言，只要可碟保不鏽鋼板14與铭 22 201119064 X' 層16、17的密著性，則形成方法並無特別限定。叙層16、 17例如可藉由蒸鍍、濺鐵（sputter)等的氣相成膜法、浸 潰於鋁的熔融金屬浴中的熔融鍍敷法、以及以表面潔淨化 之後的輥（roll)壓延等的加壓接合等來進行接合的接合方 法’來形成於不鏽鋼板14。 再者，於熔融鍍敷法的情形時，於不鏽鋼板14與鋁層 16、17的界面不得形成脆弱的金屬間化合物。自成本與^ 產性的觀點考慮，鋁層16、17的形成方法較佳為利用輥壓 延等的加壓接合法。 絕緣層18、19例如為對鋁層16、17進行陽極氧化而 形成的包括多個細孔的陽極氧化膜。該陽極氧化膜確 絕緣性。 、同 將金屬基板12作為陽極，且將該金屬基板12與陰極 一併浸潰於電解液，將電壓施加至陽極陰極之間，藉此， 可實施陽極氧化。又，對於陽極氧化而言，根據需要來對 鋁=16、Π的表面實施清洗處理、研磨平滑化處理等。使 用碳（carbon)及鋁等作為陰極。電解質不受限制，較佳 使用包含硫酸、破酸（ph〇Sph〇ric acid)、鉻酸（cllr〇me =1)、草酸（oxalic acid)、氨基磺酸（sulfamic acid)、苯 飧酸（^enzenesuif0nic acid)及胺基磺酸（amide s福心 aeid)等的酸中的一種或兩種以上的酸的酸性電解液。陽 =氧化條件取決於使用的電解質的種類，並無特別限制。 、件例如較佳處於電解質濃度1 wt%〜80 wt%、液溫5°c C、電流掛度 0.005 A/cm2〜0.60 A/cm2、電壓 1 V〜2〇〇 23 201119064 V、電解_ 3分鐘〜分鐘的·。電解質較佳為硫 酸、磷酸、草酸、或這些酸的混合液。於使用如上所述的 電解質的情形時，電解質漠度4 wt%〜3〇 wt%、液溫1(rc 3〇C 電"丨L畨度 〇 〇5 A/Cm2〜〇 3〇 A/cm2、及電壓 30 V 〜150 V較佳。 ^若雌層16、17進行陽極氧化，則氧化反應會自表面 f者大致垂直的方向進行，從而產生陽極氧化膜。於使用 ^上，酸性電解液的情形時，於陽極氧化膜中，無間隙地 排列有多個平峨_呈大致正六㈣狀的微細柱狀體， 細城體的巾心部存在微細孔，底面成為帶有弧度 的，狀。於微細柱狀體的底部，通常形成有厚度為0.02卿 了师的阻障層。再者，與酸性電解液不同，以峨 j二„ = 解液來進行電解處理，藉此，可 ㈣陽極氧化膜而非排财多孔的微細柱狀體的陽 外’為了使阻障層的層厚變大，亦可使用孔 系電解液# 法是⑽ 再次進行電解處Γ 膜之後，財性電解液來 盘防ίϊίϋ19的厚度並無制限制’只要具有絕緣性 操作時的機械衝擊引起的損傷的表面硬度即可， 此=二以可撓性的觀點來看，有時會產生問題。因 二=層=、19的較佳厚度為G 5 μιη〜5() μπ1，對於厚 U進::制可根據定電流電解、定電壓電解以及電解 24 201119064 再者’於陽極氧麟來形成絕緣層18、19的情形 時’為了防止不鏽鋼板⑽紹層16、17形成自給電池〇〇cal battery)’必祕金祕板12 (殘峨⑷賴面加以 遮擋來實現絕緣。當於㈣16、17的其中__個層上形成陽 極氧化膜時’除了金屬基板12(不鏽鋼板14)的側面之外， 亦必須雜層16、17的另-個面加以遮擋來實現絕緣。 此外，絕緣層18、19並不限定於陽極氧化所形成的紹 氧化膜。作為親緣層18、19，例如可列舉純化膜、氧 =矽膜、以及包含高分子的樹脂層。絕緣層18、19例如可 藉由化學氣相沈積（Chemical VaP〇r Depositi〇n，CVD )法、 物理氣相沈積（Physical Vapor Depositi〇n，PVD)法、或 溶膠凝膠法（Sol_Gel method)來形成，魏緣層18、19 的厚度為1 μιη〜100 μιη，較佳為1〇 μιη〜5〇 μιη。 例如可使用聚醯亞胺（p〇lyimide )或偏二氯乙烯 (vinylidene chloride)作為構成包含高分子的樹脂層的樹 脂。作為該包含高分子的樹脂層的形成方法，可使用通常 的全部的塗佈法及配量法，例如可使用刮刀（knife)塗佈、 輥（roller)塗佈、以及毛刷（brush)塗佈。 例如，當將聚酿亞胺用作構成樹脂層的樹脂時，可將 聚醯胺酸（polyamide acid)的溶液用作塗佈劑（coating agent)，於塗佈乾燥之後進行熱處理，使上述聚醯胺酸的 溶液亞胺化（imidization)，從而形成絕緣層。 於光電變換元件30中，背面電極2〇及透明電極26 岣用以傳輸光電變換層22所產生的電流。背面電極2〇及 25 r 26 26201119064 透明電極26=含導魏㈣。光人 必須具有透光性。 』这極 背面電極20例如藉由M〇、&或％、 人 元素的物質來構成。該背面電極2〇可ϋ合有這些 雙層構造等的積層構造》 ‘”、胃構也’亦可為 對於背面電極20而言，厚度較佳為1〇〇啲以上 佳為 0.45 μιη〜1.0 μιη。 更 又’背面電極20的形成方法並無特別限制，可 =br)繼，輯_目输絲 透明電極26例如藉由添加有八⑽ 4响娜_岭物來構1 ^ :^極26可為早層構造，亦可為制 造。^且，電極26的厚度並她_，較佳積^ μιη 〜1 μιη。 雷早透明電極26的形成方法並無特別限制，可藉由 26。H频法等的氣相細法來形賴透明電極 =緩衝層24的目的在於：於形成透明電極％時保 22 ’以及使人射至透明電極26的光透射至 先電變換層22為止。 該緩衝層24例如藉由cdS、ZnS、ZnO、ZnMgO、或 ZnS (J3，0H)及這些物質的組合物來構成。 緩衝層24的厚度較佳為〇 〇3 μηι〜〇·1 μπι。又，該緩 26 201119064 衝層24例如藉由化學浴沈積（ChemicalBathDep〇siti〇n， CBD)(化學浴）法來形成。 光電變換層22是將通過透明電極26及緩衝層24而到 達的光予以吸收來產生電流的層。於本實施形態中，光電 變換層22的構成並無特別限制，例如至少為一種黃銅礦 (chalcopyrite)構造的化合物半導體。此外，光電變換層 22亦可為包含ib族元素、nib族元素、及VIb族元素的至 少一種化合物半導體。 為了獲得更高的光吸收率以及光電變換效率，光電變 換層22較佳為包含選自由Cu及Ag構成的群中的至少一 種lb族元素、選自由A卜Ga及In構成的群中的至少一種 Illb族元素、以及選自由s、Se、及Te構成的群中的至少 一種VIb族元素的至少一種化合物半導體。作為該化合物 半導體，可列舉 CuA1S2、CuGaS2、CuInS2、CuAlSe2、 CuGaSe2、CuInSe2 ( CIS )、AgAlS2、AgGaS2、AgInS2、 AgAlSe2、AgGaSe2、AgInSe2、AgAlTe2、AgGaTe2、AgInTe2、 CXIn^GaJSea ( CIGS )、CuGnkAlJSez、O^IiikGaxXS， Se)2、Ag(Ini.xGax)Se2、以及 Ag(lni-xGax)(S，Se) 2 等。 光電變換層22特佳為包含CuInSe2 ( CIS)、及/或Ga 固溶於該 CuInSe2 (CIS)而成的 Cu(In，Ga)Se2 (CIGS)。 CIS及CIGS為具有黃銅礦結晶構造的半導體，已知該半 導體的光吸收率高且具有高光電變換效率。而且，由光照 射等引起的效果的劣化少，且耐久性優異。 於光電變換層22中，包含用以獲得所需的半導體導電 27 201119064 型的雜質。該雜質可藉由自相鄰接的層擴散及/或藉由積極 的摻雜（dope)來包含至光電變換層22中。於光電變換層 22中，I-III-VI族半導體的構成元素及/或雜質可存在濃度 分布，亦可包含η型、p型、及i型等的半導體性不同的 多個層區域。 例如，對於CIGS系而言，若使光電變換層22中的 Ga量具有厚度方向的分布，則可對帶隙（bandgap)的寬 度/載子（carrier)的移動度等進行控制，從而可設計出高 光電變換效率。 光電變換層22亦可包含ΐ·ιπ_νι族半導體以外的一種 或兩種以上的半導體。作為族半導體以外的半導 體，可列舉包含Si等的IVb族元素的半導體（IV族半導 體）、包含GaAs等的Illb族元素及vb族元素的半導體 (ΙΠ-ν族半導體）、以及包含CdTe等的lib族元素及VIb 族元素的半導體（II-VI族半導體）等。只要不影響特性， 貝J亦可於光電變換層22中包含半導體、以及用以設為所需 的導電型的雜質以外的任意成分。 此外，光電變換層22中的ι_ΙΠ_νι族半導體的含有量 並=特別限制。光電變換層22中的ι_ΙΠ_νι族半導體的含 有里較佳為75 wt%以上，更佳為95 wt%以上，特佳為99 wt%以上。 於將本實施形態的光電變換層22作為CIGS層的情形 時，作為CIGS層的成膜方法，多源同時蒸鍍法、2) 硒化法、3)濺鍍法、4)混合濺鍍（hybrid sputter)法、 28 201119064 以及5)機械化學製程（mechan〇chemical pr〇cess)法等已 為人所知。 1)作為多源同時蒸鑛法， 二 階 段 法 （ J.R.TuttleVarious trace metal elements such as Zn, Bi, Ni, and Ti. The thickness of the aluminum layers 16, 17 can be appropriately selected according to the layer composition and material properties of the entire photoelectric conversion device and by the stress calculation result, but for the shape of the metal substrate 12, the thickness of the layers 16, 17 For ~500 μηη. The inscription layers 16, 17 are interposed between the stainless steel sheet 14 and the insulating layers 18, 19 containing the emulsifying film, whereby the stress of the insulating layers 18, 19 is alleviated when the heat is expanded due to temperature changes. Further, when the insulating layers 18 and 19 of the metal substrate 12 are formed, the thickness of the underlying layers 16 and 17 is reduced by the prior cleaning or polishing of the anodizing and anodizing, and it is necessary to preliminarily set the above-mentioned situation. thickness. The method for forming the layers 16 and 17 is not particularly limited as long as the adhesion between the stainless steel plate 14 and the slabs 22 201119064 X' layers 16 and 17 can be obtained. The layering layers 16 and 17 can be, for example, a vapor phase film forming method such as vapor deposition or sputtering, a melt plating method in which a molten metal bath is immersed in aluminum, and a roll after surface cleaning. A joining method "joining by press bonding or the like by rolling or the like" is formed on the stainless steel sheet 14. Further, in the case of the melt plating method, a weak intermetallic compound is not formed at the interface between the stainless steel sheet 14 and the aluminum layers 16, 17. From the viewpoint of cost and productivity, the method of forming the aluminum layers 16, 17 is preferably a press bonding method using roll calendering or the like. The insulating layers 18, 19 are, for example, anodized films including a plurality of fine pores formed by anodizing the aluminum layers 16, 17. The anodized film is insulative. The metal substrate 12 is used as an anode, and the metal substrate 12 and the cathode are immersed in an electrolytic solution, and a voltage is applied between the anode and cathode, whereby anodization can be performed. Further, for the anodization, the surface of aluminum = 16, yttrium is subjected to a cleaning treatment, a polishing smoothing treatment, or the like as needed. Carbon (carbon), aluminum, or the like is used as the cathode. The electrolyte is not limited, and it is preferably used to contain sulfuric acid, ph〇Sph〇ric acid, chromic acid (cllr〇me =1), oxalic acid, sulfamic acid, benzoic acid ( An acidic electrolyte of one or two or more acids of an acid such as ^enzenesuif0nic acid) and an aminosulfonic acid (amide s heart aeid). Yang = The oxidation condition depends on the kind of the electrolyte to be used, and is not particularly limited. The member is preferably, for example, at an electrolyte concentration of 1 wt% to 80 wt%, a liquid temperature of 5 ° C, a current hung of 0.005 A/cm 2 to 0.60 A/cm 2 , a voltage of 1 V to 2 〇〇 23 201119064 V, and an electrolysis _ 3 Minutes ~ minutes. The electrolyte is preferably sulfuric acid, phosphoric acid, oxalic acid, or a mixture of these acids. In the case of using the electrolyte as described above, the electrolyte is inferior to 4 wt% to 3 〇 wt%, and the liquid temperature is 1 (rc 3 〇 C electricity " 丨 L 〇〇 〇〇 5 A / Cm2 ~ 〇 3 〇 A / Cm2 and a voltage of 30 V to 150 V are preferred. ^ If the female layers 16, 17 are anodized, the oxidation reaction proceeds from a direction substantially perpendicular to the surface f, thereby producing an anodized film. In the case of a liquid, in the anodized film, a plurality of fine columnar bodies having a shape of a substantially square (four) shape are arranged without a gap, and fine holes are formed in the core portion of the fine city body, and the bottom surface is curved. At the bottom of the fine columnar body, a barrier layer having a thickness of 0.02 qing is usually formed. Further, unlike the acidic electrolyte, electrolysis is performed by 峨j „ = solution, whereby (4) Anodized film instead of the outer surface of the porous columnar body of the porous body. In order to increase the layer thickness of the barrier layer, it is also possible to use the pore-based electrolyte # method is (10) after the electrolysis is performed again, the property is financial. The thickness of the electrolyte is not limited to the thickness of the sheet. As long as it has an insulating operation. The surface hardness of the damage caused by the impact may be, and this may cause a problem from the viewpoint of flexibility. Since the thickness of the second layer = 19 is preferably G 5 μm to 5 () μπ1, Thick U-in:: system can be based on constant current electrolysis, constant voltage electrolysis and electrolysis 24 201119064 In addition, 'in the case of forming an insulating layer 18, 19 in the anode oxygen column', in order to prevent the stainless steel plate (10) from forming a self-contained battery 〇〇cal battery) 'The secret remedy 12 (the wreckage (4) is occluded to achieve insulation. When the anodized film is formed on the __ layers of (4) 16, 17 'except the metal substrate 12 (stainless steel plate 14) In addition to the side faces, the other faces of the dummy layers 16, 17 are also shielded to achieve insulation. Further, the insulating layers 18, 19 are not limited to the oxide film formed by anodization. For example, a purified film, an oxygen=ruthenium film, and a resin layer containing a polymer can be cited. The insulating layers 18 and 19 can be deposited, for example, by chemical vapor deposition (CVD), physical vapor deposition. (Physical Vapor Depositi〇n, PVD) method, or sol Formed by a gel method (Sol_Gel method), the thickness of the peripheral layer 18, 19 is from 1 μm to 100 μm, preferably from 1 μm to 5 μm. For example, p〇lyimide or partial Vinidide chloride is a resin constituting a resin layer containing a polymer. As a method of forming the polymer layer containing the polymer, all of the usual coating methods and metering methods can be used, and for example, a knife can be used. Coating, roller coating, and brush coating. For example, when a brewed imine is used as the resin constituting the resin layer, a solution of polyamic acid can be used as a coating agent, and heat treatment is performed after coating drying to cause the above polymerization. The solution of proline is imidized to form an insulating layer. In the photoelectric conversion element 30, the back surface electrode 2 and the transparent electrode 26 are used to transmit the current generated by the photoelectric conversion layer 22. Back electrode 2〇 and 25 r 26 26201119064 Transparent electrode 26 = containing lead (4). Light people must be translucent. The back electrode 20 is composed of, for example, M〇, & or %, a human element. The back surface electrode 2 may have a laminated structure such as a double layer structure or the like, and the stomach structure may be a thickness of preferably 1 〇〇啲 or more for the back surface electrode 20 of 0.45 μm to 1.0. Further, the method of forming the back electrode 20 is not particularly limited, and may be followed by br). The transparent electrode 26 of the mesh is formed by, for example, adding an eight (10) 4 ringing ridge to form a ^^^ pole. 26 may be an early layer structure, or may be manufactured. Moreover, the thickness of the electrode 26 is _, preferably 1 μm to 〜1 μηη. The method of forming the Ray-early transparent electrode 26 is not particularly limited and may be 26. The gas phase fine method such as the H-frequency method is used to shape the transparent electrode = the buffer layer 24 for the purpose of ensuring the transmission of the transparent electrode % and the transmission of light incident on the transparent electrode 26 to the electroconversion layer 22. The buffer layer 24 is composed of, for example, cdS, ZnS, ZnO, ZnMgO, or ZnS (J3, 0H) and a combination thereof. The thickness of the buffer layer 24 is preferably 〇〇3 μηι 〇1 μπι. , the tempering 26 201119064 rush layer 24, for example, by chemical bath deposition (ChemicalBathDep〇siti〇n, CBD) The photoelectric conversion layer 22 is a layer that absorbs light that has passed through the transparent electrode 26 and the buffer layer 24 to generate a current. In the present embodiment, the configuration of the photoelectric conversion layer 22 is not particularly limited. For example, at least one compound semiconductor of a chalcopyrite structure. Further, the photoelectric conversion layer 22 may be at least one compound semiconductor containing a group ib element, a nib group element, and a group VIb element. The photoelectric conversion layer 22 preferably includes at least one group lb element selected from the group consisting of Cu and Ag, at least one group of Illb elements selected from the group consisting of Abu Ga and In, and At least one compound semiconductor of at least one group VIb element of the group consisting of free s, Se, and Te. Examples of the compound semiconductor include CuA1S2, CuGaS2, CuInS2, CuAlSe2, CuGaSe2, CuInSe2 (CIS), AgAlS2, AgGaS2, and AgInS2. , AgAlSe2, AgGaSe2, AgInSe2, AgAlTe2, AgGaTe2, AgInTe2, CXIn^GaJSea (CIGS), CuGnkAlJSez, O^IiikGaxXS, Se)2, Ag(Ini.xGax Se2, and Ag (lni-xGax) (S, Se) 2, etc. The photoelectric conversion layer 22 is particularly preferably Cu (In, containing CuInSe2 (CIS), and/or Ga dissolved in the CuInSe2 (CIS). Ga) Se2 (CIGS). CIS and CIGS are semiconductors having a chalcopyrite crystal structure, and it is known that the semiconductor has high light absorptivity and high photoelectric conversion efficiency. Further, the deterioration due to the effect of light irradiation or the like is small, and the durability is excellent. In the photoelectric conversion layer 22, impurities for obtaining a desired semiconductor conductive type 27 201119064 are included. The impurities may be incorporated into the photoelectric conversion layer 22 by diffusion from adjacent layers and/or by active doping. In the photoelectric conversion layer 22, constituent elements and/or impurities of the I-III-VI semiconductor may have a concentration distribution, and may include a plurality of layer regions having different semiconductor properties such as an n-type, a p-type, and an i-type. For example, in the CIGS system, if the amount of Ga in the photoelectric conversion layer 22 has a distribution in the thickness direction, the bandgap width/carrier mobility can be controlled, and thus the design can be designed. High photoelectric conversion efficiency. The photoelectric conversion layer 22 may also contain one type or two or more types of semiconductors other than the ι·ιπ_νι group semiconductor. Examples of the semiconductor other than the group semiconductor include a semiconductor (Group IV semiconductor) containing a group IVb element such as Si, a semiconductor including a group of 11b elements such as GaAs and a group Vb element (ΙΠ-ν group semiconductor), and CdTe or the like. A semiconductor (II-VI semiconductor) of the lib group element and the VIb group element. As long as the characteristics are not affected, the semiconductor J may include a semiconductor and an optional component other than the impurity to be a desired conductivity type in the photoelectric conversion layer 22. Further, the content of the ι_ΙΠ_νι group semiconductor in the photoelectric conversion layer 22 is particularly limited. The content of the ι_ΙΠ_νι group semiconductor in the photoelectric conversion layer 22 is preferably 75 wt% or more, more preferably 95 wt% or more, and particularly preferably 99 wt% or more. When the photoelectric conversion layer 22 of the present embodiment is used as a CIGS layer, as a film formation method of the CIGS layer, a multi-source simultaneous deposition method, 2) selenization method, 3) sputtering method, and 4) mixed sputtering ( The hybrid sputter method, 28 201119064 and 5) mechan〇chemical pr〇cess method are known. 1) As a multi-source simultaneous steaming method, the second stage method (J.R.Tuttle

et.al”Mat.Res.Soc.Symp.Proc.，Vol.426(1996)p.l43.#)、EC 群組（group)的同時蒸鍍法（LSt〇lt et al : pr〇cl3th ECPVSEC(1995，Nice)1451.等）已為人所知 β 作為前者的三階段法是如下的方法，即’於高真空中， 首先以300C的基板溫度來對in、Ga、以及Se進行同時蒸 鍍，接著，升温至500〇C〜560。(：，對cU以及Se進行同時 瘵鍍之後，進一步對In、Ga、以及Se進行同時蒸鍍。作 為後者的EC群組的同時蒸鑛法是如下的方法即，於蒸 鍍初期對Οι過剩的CIGS進行蒸鍍，於後半階段對in = 剩的CIGS進行蒸鍵。 ^ 為了使CIGS膜的結晶性提高，作為對上述方法加 改良而成的方法， a) 使用離子（i〇n)化之後的Ga的方法（HMiyazaki et.al” phys_stat.sol.(a)，Vol.203 (2006) ρ.2603·等）、 ^ b) 使用裂化（cracking)之後的Se的方法（第邰a 應用物理學會學術演講會，演講論文集（2〇〇7秋，北^ 工業大學）7P-L-6等）、 、 c)使用自由基（radical)化之後的Se的方法（第5斗 次應用物理學會學術演講會，演講論文集（2〇〇7春，主 學院大學）29P-ZW-10等）、以及 月 29 201119064 術發财的枝（第54:域用物理學會學 ^ f會，决講論文集（2007春，青山學院大學）29P-ZW-14 等）等已為人所知。 2)硒化法亦稱為二階段法，該硒化法為如下的方法， 即’首先以賤鑛法、蒸鐘法、或電鑛法等來使Cu廣/In層 或（Cu Ga)層/ιη層等的積層膜的金屬前驅物（precurs〇r) 成膜將所形成的膜於砸蒸氣或砸化氫中加熱至450〇C〜 55〇°C左右，藉由熱擴散反應來產生Cu(Inl-xGax)Se2等的 硒化合物。將上述方法稱為氣相硒化法。此外，存在固相 硒化法，即，將固相硒堆積於金屬前驅物膜上，藉由將該 固相硒作為硒源的固相擴散反應來將上述金屬前驅物膜予 以砸化。 於硒化法中，為了避免硒化時所產生的急遽的體積膨 服，預先以某比例將硒混合於金屬前驅物膜的方法 (T.Nakada et.al.，Solar Energy Materials and Solar Cells 35(1994)204-214.等）；以及將硒包夾於金屬薄層之間（例 如以Cu層/In層/Se層…Cu層/In層/Se層的方式來積層） 而形成多層化前驅物膜的方法（T.Nakada et.al., Pr〇e. 〇f l〇th European Photovoltaic Solar EnergyEt.al"Mat.Res.Soc.Symp.Proc., Vol. 426 (1996) p.l43.#), simultaneous evaporation of EC groups (LSt〇lt et al: pr〇cl3th ECPVSEC (1995, Nice) 1451. Etc.) It is known that the three-stage method in which the former is the former is a method of simultaneously steaming in, Ga, and Se at a substrate temperature of 300 C in a high vacuum. After plating, the temperature is raised to 500 〇C to 560. (: After simultaneous ruthenium plating of cU and Se, simultaneous deposition of In, Ga, and Se is carried out. The simultaneous evaporation method of the latter EC group is In the method of vapor deposition, the excess CIGS is vapor-deposited at the initial stage of vapor deposition, and the intrinsic CIGS is steamed in the second half. ^ In order to improve the crystallinity of the CIGS film, the above method is improved. Method, a) Method of using Ga after ionization (HMiyazaki et. al" phys_stat.sol. (a), Vol. 203 (2006) ρ. 2603·etc), ^ b) Using cracking ( Method of Se after cracking) (The third lecture of the Institute of Applied Physics, lecture papers (2〇〇7 autumn, North ^ University of Technology) 7P-L-6, etc.), c) Method of using Se after radicalization (5th bucket application physics society academic lecture, speech proceedings (2〇〇7 spring, main college university) 29P-ZW-10, etc.), and month 29 201119064 The branch of the fortune (the 54th: The physics association of the domain ^ f meeting, the essay proceedings (2007 spring, Aoyama Gakuin University) 29P-ZW-14, etc.) and so on are known. 2) The selenization method is also called a two-stage method, and the selenization method is a method of first making a Cu/In layer or a (Cu Ga) by a bismuth ore method, a steaming method, or an electrominening method. Metal precursor of laminated film such as layer/ιη layer (precurs〇r) film formation The film is heated in a vapor or hydrogen halide to about 450 ° C to 55 ° ° C, by thermal diffusion reaction A selenium compound of Cu (Inl-xGax) Se2 or the like is produced. The above method is referred to as a gas phase selenization method. Further, there is a solid phase selenization method in which solid phase selenium is deposited on a metal precursor film, and the metal precursor film is deuterated by solid phase diffusion reaction using the solid phase selenium as a selenium source. In the selenization method, in order to avoid the rapid volume expansion caused by selenization, a method of mixing selenium in a metal precursor film in a certain ratio (T.Nakada et.al., Solar Energy Materials and Solar Cells 35) (1994) 204-214. etc.; and forming a multi-layered layer by sandwiching a selenium package between thin metal layers (for example, a layer of Cu layer/In layer/Se layer...Cu layer/In layer/Se layer) Method for precursor film (T.Nakada et.al., Pr〇e. 〇fl〇th European Photovoltaic Solar Energy

Conference(1991)887-890.等）已為人所知。 此外，作為分級（graded)帶隙CIGS膜的成膜方法， 存在如下的方法，即，首先堆積Cu-Ga合金膜，將In膜堆 積於該Cu-Ga合金膜上，當對In膜進行硒化時，利用自然 熱擴散來使Ga濃度於膜厚方向上發生傾斜（K.KushiyaConference (1991) 887-890. et al. are known. Further, as a film forming method of a graded band gap CIGS film, there is a method of first depositing a Cu-Ga alloy film, depositing an In film on the Cu-Ga alloy film, and performing selenium on the In film. When naturalizing, the natural heat diffusion is used to tilt the Ga concentration in the film thickness direction (K.Kushiya

30 201119064 et.al., Tech.Digest 9th Photovoltaic Science and Engineering30 201119064 et.al., Tech.Digest 9th Photovoltaic Science and Engineering

Conf. Miyazaki, 1996(Intn.PVSEC-9，Tokyo ’ l996)p. 149. 等）。 ‘Conf. Miyazaki, 1996 (Intn. PVSEC-9, Tokyo ’ l996) p. 149. et al. ‘

3) 作為濺鍍法’將CuInSe2多結晶作為靶材（target) 的方法；將Cuje與Inje3作為靶材，且將H2Se/Ar混合 氣體用作濺鍍氣體的二源濺鍍法（j.H Ermer，et al，PlOC 18th 正EE Photovoltaic Specialists Conf.(1985)1655_1658. 等）；以及於Ar氣體中來對Cu靶材、In靶材、Se或CuSe 把材進行濺鍍的三源濺鍍法（T Nakada，et al，3) As a method of sputtering the 'CuInSe2 polycrystal as a target; a Cu source and Inje3 as a target, and a H2Se/Ar mixed gas as a sputtering source gas (jH Ermer, Et al, PlOC 18th EE Photovoltaic Specialists Conf. (1985) 1655_1658. etc.; and three-source sputtering method for sputtering Cu target, In target, Se or CuSe material in Ar gas (T Nakada, et al,

Jpn.J.ApPl.PhyS.32(1993)L1169-L1172.等）已為人所知。 4) 作為混合濺鍍法，對上述濺鍍法中的〇11與迅金屬 進行直流濺鍍，且僅對Se進行蒸鍍的混合濺鍍法 (T.Nakada’et.al., Jpn.Appl.Phys.34(1995)4715-4721·等）已 為人所知。 5) 機械化學製程法為如下的方法，即，將與CIGS的 組成相對應的原料放入至行星式球磨機（planetafy ball mill)的谷态中，藉由機械性能量（energy)來將原料加以 混合而獲得CIGS粉末，然後，藉由網版（screen)印刷來 將該CIGS粉末塗佈至基板上，實施退火（anneal)，從而 獲得 CIGS 的膜（T.Wada et.al” Phys.stats〇1 ⑻，v〇12〇3 (2006) p2593 等）。 作為其他CIGS成膜法，可列舉網版印刷法、接近昇 華法、金屬有機化學氣相沈積（Metal 0rganic Chemical Vapor Deposition ’ MOCVD)法、以及噴霧（spray)法等。 201119064 印:法或嘴霧法等來於基板上形成包含仍族 八解處理（、=、、以及VIb族元素的微粒子膜，實施熱 可二可，族元素環境中的熱分解處理) 9 7406^ * “的組成的結晶（日本專利特開平 :，報、日本專利特開平9携號公報等)。 接者i對本發明的第2實施形態進行說明。 b圖2疋表示本發明的光電變換裝置的第2實施形態的 太電池子模組的模式性剖面圖。 然而’於本實施形態中，對與圖1所示的第1實施形 態的太陽電池子模組1G相同的構成物附上相同符號，且省 略其詳細的說明。 如圖2所不，本實施形態的太陽電池子模組i〇a與第 1實施形態的太陽電池子模組10 (參照圖n相比較，金 屬基板12a的構成不同，除此以外的構成為與第i實施形 態的太陽電池子模組1〇 (參照圖〇相同的構成，因此省 略其詳細的說明。 於圖2所示的本實施形態的太陽電池子模組1〇a中， 對於金屬基板12a而言，不僅不鏽鋼板14的表面14a及背 面14b被銘層36覆蓋著，而且侧面14c亦被紹層36覆蓋 著。亦即，於不鏽鋼板14的整個面上形成有鋁層36。該 铭層36可設為與第1實施形態的鋁層16相同的構成。因 此，省略鋁層36的詳細的說明。 於本實施形態中，於與鋁層36的不鏽鋼板14的表面 14a上相當的區域形成有絕緣層i8,於與不鏽鋼板14的背 32 201119064 面14b上相當的區域亦形成有絕緣層μ。 於該金屬基板12a中，與第1實施形態同樣地，絕緣 層18未形成於鋁層36的不鏽鋼板14的表面14a側的兩端 部36a、36b。而且’絕緣層19亦未形成於不鏽鋼板14的 背面14b侧的兩端部36c、36d。 於未形成有絕緣層18的鋁層36的不鏽鋼板14的表面 14a側的其中一個端部36&形成有第2導電構件％。而且， 月面電極21連接於未形成有絕緣層的另一個端部36b。 如圖2所示，於本實施形態中，由於不鏽鋼板14的整 個面被鋁層36覆蓋’因此，與第}實施形態相比較，當形 成陽極氧化膜作為絕緣層18、19時，不鏽鋼板14不會^ 電解液接觸。因此，電解液與不鏽鋼板14不會發生反應^ 而且若不鏽鋼板14與電解液接觸，則於陽極氧化處理^， 必須使電流變大，但本實施形態中無需如此。 然而，對於本實施形態的金屬基板12a而言，例如， 將不鏽鋼板Μ浸潰於具有㉟層％的組成的熔融金屬浴 中，進行熔融鍍敷’藉此來於不鏽鋼板14的整個面形 層36。 此外，於本實施形態中，與第i實施形態相比較，仓 金屬基板12a的構成不同，因此，雖省略與本實施形熊本 關的詳細的說明，但可獲得與第！實施形態相同的效&。 接著，對本發明的第3實施形態進行說明。 圖3是表示本發明的光電變換裝置的第3實施形態纪 太陽電池子模組的模式性剖面圖。 ’Jpn. J. ApPl. PhyS. 32 (1993) L1169-L1172. etc.) is known. 4) As a mixed sputtering method, a mixed sputtering method in which the 〇11 and the fast metal in the above sputtering method are subjected to DC sputtering, and only Se is vapor-deposited (T.Nakada'et.al., Jpn.Appl .Phys. 34 (1995) 4715-4721·etc.) is known. 5) The mechanochemical process method is a method in which a raw material corresponding to the composition of CIGS is placed in a valley state of a planetary ball mill, and the raw material is added by mechanical energy. The CIGS powder was obtained by mixing, and then the CIGS powder was applied onto a substrate by screen printing, and annea was performed to obtain a film of CIGS (T. Wada et. al" Phys. stats〇 1 (8), v〇12〇3 (2006) p2593, etc.) As other CIGS film forming methods, a screen printing method, a near-sublimation method, a metal organic chemical vapor deposition (Metal 0rganic Chemical Vapor Deposition 'MOCVD) method, And a spray method, etc. 201119064 Printing: a method of forming a microparticle film containing a group of elements of the quaternary solution (, =, , and VIb) on a substrate, and performing a heat-reducible environment. In the thermal decomposition treatment) 9 7406^ * "The crystal of the composition (Japanese Patent Laid-Open:, pp., Japanese Patent Laid-Open 9 carrying bulletin, etc.). The second embodiment of the present invention will be described with reference to the receiver i. Fig. 2A is a schematic cross-sectional view showing a solar cell sub-module according to a second embodiment of the photoelectric conversion device of the present invention. In the present embodiment, the same components as those of the solar battery sub-module 1G of the first embodiment shown in Fig. 1 are denoted by the same reference numerals, and detailed description thereof will be omitted. As shown in Fig. 2, the solar cell sub-module i〇a of the present embodiment is different from the solar cell sub-module 10 of the first embodiment (see the structure of the metal substrate 12a in comparison with Fig. n, and the other configuration is Since the solar cell sub-module 1 of the first embodiment (the same configuration as that of the above-described embodiment) is omitted, the detailed description thereof will be omitted. In the solar cell sub-module 1A of the present embodiment shown in FIG. 2, the metal is used. In the substrate 12a, not only the surface 14a and the back surface 14b of the stainless steel plate 14 are covered by the inscription layer 36, but also the side surface 14c is covered by the layer 36. That is, the aluminum layer 36 is formed on the entire surface of the stainless steel plate 14. The inscription layer 36 can have the same configuration as that of the aluminum layer 16 of the first embodiment. Therefore, the detailed description of the aluminum layer 36 will be omitted. In the present embodiment, on the surface 14a of the stainless steel plate 14 with the aluminum layer 36. The insulating layer i8 is formed in a region corresponding to the surface 32 of the back surface 32 201119064 of the stainless steel plate 14. In the metal substrate 12a, the insulating layer 18 is not formed in the metal substrate 12a. The surface of the stainless steel plate 14 formed on the aluminum layer 36 Both end portions 36a and 36b on the 14a side. Further, the 'insulating layer 19 is not formed on both end portions 36c and 36d on the back surface 14b side of the stainless steel plate 14. The stainless steel plate 14 of the aluminum layer 36 in which the insulating layer 18 is not formed is formed. The one end portion 36 of the surface 14a side is formed with the second conductive member %. Further, the moon electrode 21 is connected to the other end portion 36b where the insulating layer is not formed. As shown in Fig. 2, in the present embodiment, Since the entire surface of the stainless steel plate 14 is covered by the aluminum layer 36, the stainless steel plate 14 does not come into contact with the electrolyte when the anodized film is formed as the insulating layers 18, 19 as compared with the first embodiment. When the stainless steel plate 14 is not in contact with the electrolytic solution, if the stainless steel plate 14 is in contact with the electrolytic solution, the current must be increased in the anodizing treatment. However, this embodiment does not need to be. However, the metal substrate 12a of the present embodiment is not required. For example, the stainless steel sheet is impregnated into a molten metal bath having a composition of 35% by composition, and is subjected to melt plating 'by the entire surface layer 36 of the stainless steel sheet 14. Further, in the present embodiment With i Since the configuration of the silo metal substrate 12a is different, the detailed description of the present embodiment is omitted, but the same effect as that of the third embodiment can be obtained. Next, the third embodiment of the present invention is obtained. Fig. 3 is a schematic cross-sectional view showing a solar cell sub-module according to a third embodiment of the photoelectric conversion device of the present invention.

S 33 201119064 再者’於本實施形態中，對與圖1所示的第1實施形 態的太陽電池子模組10相同的構成物附上相同符號，且省 略其詳細的說明。 如圖3所示，本實施形態的太陽電池子模組與第 1實施形態的太陽電池子模組10 (參照圖1)相比較，金 屬基板12b的構成不同’除此以外的構成為與第1實施形 態的太陽電池子模組10 (參照圖1)相同的構成，因此， 省略其詳細的說明。 對於圖3所示的本實施形態的太陽電池子模組1〇b而 言’於金屬基板12b中，僅於不鏽鋼板14的表面14a，即， 僅於單面形成有鋁層16，於該鋁層16形成有絕緣層18。 對於本實施形態的金屬基板12b，例如，將銘層16的 形成絕緣層18的區域以外的部分加以遮擋來進行陽極氧 化，從而僅於單面形成絕緣層18。 於本實施形態中，與第1實施形態相比較，僅金屬基 板12b的構成不同’因此，雖省略與本實施形態相關的詳 細的說明，但可獲得與第丨實施形態相同的效果。 接著，對本發明的第4實施形態進行說明。 圖4是表示本發明的光電變換裝置的第4實施形態的 太陽電池子模組的模式性剖面圖。 再者’於本實施形態中，對與圖1所示的第丨實施形 態的太陽電池子模組丨〇相同的構成物附上相同符號，且省 略其詳細的說明。 如圖4所示，本實施形態的太陽電池子模組10c與第 34 201119064 1實施形態的太陽電池子模組10 (參照圖i)相比較，金 屬基板12c的構成不同，除此以外的構成為與第i實施形 態的太陽電池子模組10 (參照圖丨）相同的構成，因此， 省略其詳細的說明。 於圖4所示的本實施形態的太陽電池子模組l〇c中， 金屬基板12c僅由鋁基板38構成，於該鋁基板％的表面 38a與背面38b分別形成有包含陽極氧化膜的絕緣層18、 19。 於本實知形態中，絕緣層18亦未形成於紹基板38的 表面38a側的兩侧端部39a、39b。 此外，絕緣層19未形成於鋁基板38的背面38b側 兩側端部39c、39d。 ' 可於形成絕緣層18、19之後，例如藉由雷射切割來 絕緣層18、19予以除去，藉此來形成如上所述的未形 絕緣層18、19的區域。 胥 而且，當藉由陽極氧化來形成絕緣層18、19時，即便 不將金屬基板12c的兩端部及側面部加以遮擋來形成絶 層18、19，亦可形成不會形成有絕緣層18、19的區域: 圖4的左端的背面電極21連接於鋁基板％的未幵j ° 有絕緣層18的端部39b，背面電極21與鋁基板38導^、 而且，第2導電構件34連接於未形成有絕緣層沾 鋁基板38的端部39a，第2導電構件34與鋁基板邛導、 如此，於本實施形態中，亦將金屬基板12c作為導體，。 電流自背面電極21流向第2導電構件34。於該情形時使 35 201119064 第1導電構件32為負極，第2導電構件％為正極。 對於本實施形態的金屬基板12e，例如，_層16的 形成絕緣層18、19的區域科的部分加以賴來進行_ 氧化，從而形成絕緣層18、19。 於本實施形態中，與第1實施形態相比較，僅金屬基 板12c的構成不同，因此，雖省略與本實施形態相關的詳 細的說明，但可獲得與第丨實施形態相同的效果。 此外’於本實施形態中，由於將鋁基板38用作金屬基 板12c，因此，對於製造步驟、使用環境等而言，適合於 不要求耐熱性的情形。 ★此外’金屬基板12c為單板構造而非包層構造，因此， 與第1實施形態相比較，可抑制材料成本。 於本實施形態的鋁基板38中，例如可使用日本工業標 準（JIS )的1000系純Ah A1_Mn系合金、Ai Mg系合金、 A1 Mn-Mg系合金、Al-Zr系合金、A1_Si系合金、及A1Mg Si 系合金等的…與其他金屬元素的合金（參照「财冊第4 版」（1990年’輕金屬協會發行））。於銘基板38中，亦可 〇 3 Fe、Si、Mn、Cu、Mg、Cr、Zn、Bi、Ni、及 Ti 等的 各種微量金屬元素。 對於絲板38而言’例如，主成分亦可為.所謂該 主成分為is，是馳含有量為9Gwt%以上。 紹基板38的厚度例如為0.1咖〜10匪。再者，於 ，用銘基板38的情形’當形成絕緣層時，由於紹基板兇 、厚度日因陽極氧化及陽極氧化的事先清洗或研磨而減 36 201119064 少因此’必顧先⑨為預見了上述情況的厚度。 ^使用18基板38的情形時，進行陽極氧化，然後進行 ，疋的封孔處理，藉此’可形成絕緣層18、19。於該絕緣 18、19的製造步财’亦可包括必需的步驟以外的各種 步驟。 於本實施形態中’例如可經由將所附著的壓延油予以 除去的脫脂步驟、將峨的表面_污層（smut)予以溶 解的除垢（desmut)處理步驟、將純的表的以粗面化 的粗面化處理轉、於板的表面形成陽極氧化皮膜的陽 極氧化處理步驟、以及對陽極氧化皮膜的微孔（micr〇p〇re) 進行封孔的封孔處理來形成絕緣層18、19。 接著，對本發明的第5實施形態進行說明。 圖5是表示本發明的光電變換裝置的第5實施形態的 太陽電池子模組的模式性剖面圖。 再者，於本實施形態中，對與圖丨所示的第丨實施形 態的太1%電池子模組1〇相同的構成物附上相同符號，且省 略其詳細的說明。 如圖5所示’本實施形態的太陽電池子模組與第 1實施形態的太陽電池子模組1〇 (參照圖1)相比較，金 屬基板12d的構成不同，除此以外的構成為與第丨實施形 態的太陽電池子模組10 (參照圖1)相同的構成，因此， 省略其詳細的說明。 於圖5所示的本實施形態的太陽電池子模組1〇(J中， 金屬基板12d僅由铭基板38構成，僅於該紹基板38的表 37 201119064 面38a形成有包含陽極氧化膜的絕緣層18。 於本實施形態中’絕緣層U亦未形成於叙基板％的 表面38a側的兩侧端部39a、39b。 對於未形成有絕緣層18的區域，例如於形成絕緣層 18的If形時’將金屬基板⑶的表面侧的兩端部 、側面部 及为面加以遮擋，藉由陽極氧化來形成絕緣層18。 圖5的左端的背面電極21連接於鋁基板38的未形成 有絕緣層18的端部39b，背面電極21與鋁基板38導通。 此外，第2導電構件34連接於未形成有絕緣層18的 鋁基板38的端部39a’第2導電構件34與鋁基板38導通。 於本實施形態中，與第1實施形態相比較，僅金屬基 板12d的構成不同，因此，雖省略與本實施形態相關的詳 細的說明，但可獲得與第丨實施形態相同的效果。 此外，於本實施形態中，由於將鋁基板38用作金屬基 板12d，因此，對於製造步驟、使用環境等而言，適合於 不要求耐熱性的情形。 此外金屬基板12d為单板構造而非包層構造，因此， 與第1實施形態相比較，可抑制材料成本。 然而’於本實施形態中’鋁基板38可使用與第4實施 形態的铭基板38相同的基板。 接著’對本發明的第6實施形態進行說明。 圖6 (a)是表示本發明的光電變換裝置的第6實施形 態的太陽電池子模組的模式性剖面圖’圖6 (b)是表示本 發明的光電變換裝置的第6實施形態的太陽電池子模組的 38 201119064 模式性平面圖。 再者，於本實施形態中，對與圖丨所示的第丨實施形 態的太陽電池子模組1 〇相同的構成物附上相同符號，且省 略其詳細的說明。 如圖6 (a)所示，本實施形態的太陽電池子模組i〇e 與第1實施形態的太陽電池子模組10(參照圖1)相比較， 第1導電構件32的形成位置不同，除此以外的構成為與第 1實施形態的太陽電池子模組10(參照圖〗）相同的構成， 因此，省略其詳細的說明。 於圖1所示的第1實施形態的太陽電池子模組1〇中， 第1導電構件32連接於光電變換元件3〇的透明電極26 的表面26a，該光電變換元件30形成於右側的端部的背面 電極20a上。於本實施形態中，如圖6 (a)所示，第j導 電構件32直接形成於右侧的端部的背面電極2〇a上。 例如可藉由雷射切割或機械切割來將形成於背面電極 2〇a上的光電變換元件30除去，從而使背面電極咖露出。 於本實施形態中，與第1實施形態相比較，僅第j導 電構件32的形成位置不同，因此，雖省略與本實施形態相 關的詳細的說明，但可獲得與第丨實施形態相同的效果。 此外，於本實施形態中，將第丨導電構件直接形成 於背面電極20a上，藉此，可使第丨導電構件32與第2 導電構件34的高度大致相同。因此，第1導電構件32與 第2導電構件34的與端子箱相連的高度相同，從而可使端 子箱變薄。而且，例如當將圖6 (b)所示的太陽電池子模 39 201119064 組l〇e組裝為太陽電池模組時，雖必須將第1導電構件32 與第2導電構件34牵繞至背面側，但可使該牵繞的配線的 作業變得容易。 此外’於本實施形態中，將第1導電構件32直接形成 於背面電極20a上，但於上述第1實施形態〜第5實施形 態中’亦可設為將第丨導電構件32直接形成於背面電極 20a上的構成。 接著’對本發明的第7實施形態進行說明。 圖7是表示本發明的光電變換裝置的第7實施形態的 太陽電池子模組的模式性剖面圖。 然而，於本實施形態中，對與圖丨所示的第丨實施形 態的太陽電池子模组丨〇相同的構成物附上相同符號，且省 略其詳細的說明。 如圖7所示，本實施形態的太陽電池子模組10f與第 1實施形態的太陽電池子模組10 (參照圖〇相比較，、金 屬基板12e的構成、及第2導電構件34的配置位置不同， 除此以外的構成為與第丨實施形態的太陽電池子模組⑺ (參照圖1)相同的構成，因此，省略其詳細的說明。 於圖7所示的本實施形態的太陽電池子模組1〇f中， 金屬基板12e僅由紹基板38構成，於該紹基板％的表面 38a形成有包含陽極氧化膜的絕緣層18。 於本實施形態中，絕緣層18亦未形成於銘基板邛的 表面38a側的兩側端部39a、39b。 於形成絕緣層18之後，例如藉由雷射切割來將絕緣層 201119064l 18予以除去，藉此’可形成如上所述的未形成有絕緣層18 的區域。 此外，當藉由陽極氧化來形成絕緣層18時，即便將金 屬基板12c的兩端部、側面部及背面加以遮擋，亦可形成 未形成有絕緣層18的區域。 圖7的左端的背面電極21連接於鋁基板38的未形成 有絕緣層18的端部3%，背面電極21與銘基板％導通。 並且，於鋁基板38的背面38b形成有第2導電構件 34，该第2導電構件34與鋁基板38導通。 於本實施形態中，與第i實施形態相比較，僅金屬基 板12e的構成、及第2導電構件34的配置位置不同因此， 雖省略與本實施形態相關的詳細的說明，但可獲得與第^ 實施形態相同的效果。 此外，於本實施形態中，由於設置於第2導電構件34 的金屬基板12e即鋁基板38的背面38b，因此當形成太陽 電池模組時，於第1實施形態中，將第1導電構件32、第 2導電構件34牽繞至背面14b側，但於本實施形態中，無 需將第2導電構件％轉至背面侧，可進—步使作業性提 高。而且，由於無需對第2導電構件34進行牵繞，因此可 使配線縮短’進而可削減材料費。 此外，於本實施形態中，由於將鋁基板兇用作金屬基 板12e，因此，對於製造步驟、使用環境等而言，適合於 不要求耐熱性的情形。 此外，金屬基板12e為單板構造而非包層構造，因此， 201119064 與第1實施形態相比較，可抑制材料成本。 然而，於本實施形態中，金屬基板的構成並無特別限 定’例如可利用第1實施形態的金屬基板12、第2實施形 態的金屬基板12a、第3實施形態的金屬基板12b、第4 實施形態的金屬基板12c、以及第5實施形態的金屬基板 12d。 接著，對本發明的第8實施形態進行說明。 圖8是表示本發明的光電變換裝置的第8實施形態的 太陽電池子模組的模式性剖面圖。 然而，於本實施形態中，對與圖丨所示的第丨實施形 態的太陽電池子模組1 〇相同的構成物附上相同符號，且省 略其詳細的說明。 如圖8所示，本實施形態的太陽電池子模組1〇g與彳 1實施形態的太陽電池子模組1〇 (參照圖υ相比較，第 f電構件32的形成位置、第2導電構件34的形成位置 背面電極41與金屬基板丨2的連接位置、以及光電變換; ，50的構成不同，除此以外的構成為 的 :電池子模組!。(參照圖。相同的構成 詳細的說明。 雜圖^示的本實施形態的太陽電池子模組log的光 上、7L牛〇為稱為串接（tandem) 光電變換元件50藉由背面電極4G、41、光1 =26來構成。此外，各光電變換=二 _極4〇為止的開口槽⑺）51而彼In the present embodiment, the same components as those of the solar battery sub-module 10 of the first embodiment shown in Fig. 1 are denoted by the same reference numerals, and detailed description thereof will be omitted. As shown in FIG. 3, the solar cell sub-module of the present embodiment is different from the solar cell sub-module 10 (see FIG. 1) of the first embodiment in that the configuration of the metal substrate 12b is different. Since the solar battery sub-module 10 (see FIG. 1) of the first embodiment has the same configuration, detailed description thereof will be omitted. In the solar cell sub-module 1b of the present embodiment shown in FIG. 3, in the metal substrate 12b, only the surface 14a of the stainless steel plate 14, that is, the aluminum layer 16 is formed only on one surface, The aluminum layer 16 is formed with an insulating layer 18. In the metal substrate 12b of the present embodiment, for example, a portion other than the region where the insulating layer 18 is formed of the insulating layer 16 is shielded to be anodized, and the insulating layer 18 is formed only on one surface. In the present embodiment, only the configuration of the metal base plate 12b is different from that of the first embodiment. Therefore, the detailed description of the present embodiment will be omitted, but the same effects as those of the third embodiment can be obtained. Next, a fourth embodiment of the present invention will be described. Fig. 4 is a schematic cross-sectional view showing a solar battery sub-module according to a fourth embodiment of the photoelectric conversion device of the present invention. In the present embodiment, the same components as those of the solar cell sub-module 丨 of the third embodiment shown in Fig. 1 are denoted by the same reference numerals, and detailed description thereof will be omitted. As shown in FIG. 4, the solar cell sub-module 10c of the present embodiment is different from the solar cell sub-module 10 (see FIG. i) of the 34201119064 embodiment, and the configuration of the metal substrate 12c is different. The solar cell sub-module 10 (see FIG. 丨) of the first embodiment has the same configuration, and therefore detailed description thereof will be omitted. In the solar cell sub-module 10c of the present embodiment shown in FIG. 4, the metal substrate 12c is composed only of the aluminum substrate 38, and an insulating layer including an anodized film is formed on each of the surface 38a and the back surface 38b of the aluminum substrate. Layers 18, 19. In the present embodiment, the insulating layer 18 is not formed on both side end portions 39a and 39b on the surface 38a side of the substrate 38. Further, the insulating layer 19 is not formed on both side end portions 39c, 39d on the side of the back surface 38b of the aluminum substrate 38. After the insulating layers 18, 19 are formed, the insulating layers 18, 19 are removed, for example, by laser cutting, whereby the regions of the unshaped insulating layers 18, 19 as described above are formed. Further, when the insulating layers 18 and 19 are formed by anodization, the insulating layers 18 may be formed without blocking the both ends and side portions of the metal substrate 12c to form the insulating layers 18 and 19. Area of 19: The rear surface electrode 21 at the left end of FIG. 4 is connected to the end portion 39b of the insulating substrate 18 of the aluminum substrate %, the back surface electrode 21 is connected to the aluminum substrate 38, and the second conductive member 34 is connected. In the end portion 39a where the insulating layer-impregnated aluminum substrate 38 is not formed, the second conductive member 34 is guided to the aluminum substrate. Thus, in the present embodiment, the metal substrate 12c is also used as a conductor. Current flows from the back surface electrode 21 to the second conductive member 34. In this case, the 35 201119064 first conductive member 32 is a negative electrode, and the second conductive member % is a positive electrode. In the metal substrate 12e of the present embodiment, for example, the portion of the region 16 where the insulating layers 18 and 19 are formed is oxidized to form the insulating layers 18 and 19. In the present embodiment, only the configuration of the metal base plate 12c is different from that of the first embodiment. Therefore, the detailed description of the present embodiment will be omitted, but the same effects as those of the second embodiment can be obtained. Further, in the present embodiment, since the aluminum substrate 38 is used as the metal substrate 12c, it is suitable for the case where the manufacturing process, the use environment, and the like are not required to have heat resistance. Further, since the metal substrate 12c has a single-plate structure instead of a clad structure, the material cost can be suppressed as compared with the first embodiment. In the aluminum substrate 38 of the present embodiment, for example, a 1000-series pure Ah A1_Mn alloy, an Ai Mg-based alloy, an A1 Mn-Mg-based alloy, an Al-Zr-based alloy, and an A1_Si-based alloy according to Japanese Industrial Standards (JIS) can be used. And alloys such as A1Mg Si-based alloys and other metal elements (refer to "4th Edition" (1990 "Light Metals Association"). In the Yuming substrate 38, various trace metal elements such as 3 Fe, Si, Mn, Cu, Mg, Cr, Zn, Bi, Ni, and Ti may be used. For the wire plate 38, for example, the main component may be. The main component is is, and the content of the component is 9 Gwt% or more. The thickness of the substrate 38 is, for example, 0.1 to 10 Å. Furthermore, in the case of using the substrate 38, when the insulating layer is formed, the substrate is reduced due to the prior cleaning or polishing of the anodizing and anodizing due to the thickness of the substrate. The thickness of the above case. When the 18 substrate 38 is used, anodization is performed, and then, the sealing treatment of the crucible is performed, whereby the insulating layers 18, 19 can be formed. The manufacturing steps of the insulation 18, 19 may also include various steps other than the necessary steps. In the present embodiment, for example, a degreasing step of removing the adhered rolling oil, a desmut processing step of dissolving the surface smut of the crucible, and a rough surface of the pure table can be used. Forming the insulating layer 18 by performing an anodizing treatment step of forming an anodized film on the surface of the plate, and sealing a hole for sealing the micropores of the anodized film. 19. Next, a fifth embodiment of the present invention will be described. Fig. 5 is a schematic cross-sectional view showing a solar battery sub-module according to a fifth embodiment of the photoelectric conversion device of the present invention. In the present embodiment, the same components as those of the 1% battery sub-module 1A of the third embodiment shown in the drawings are denoted by the same reference numerals, and detailed description thereof will be omitted. As shown in FIG. 5, the solar cell sub-module of the present embodiment differs from the solar cell sub-module 1 of the first embodiment (see FIG. 1) in that the metal substrate 12d has a different configuration, and the other configuration is Since the solar battery sub-module 10 (see FIG. 1) of the second embodiment has the same configuration, detailed description thereof will be omitted. In the solar cell sub-module 1 of the present embodiment shown in FIG. 5, the metal substrate 12d is composed only of the slab 38, and only the surface 38a of the slab 38 is formed on the surface 38a of the slab 38. In the present embodiment, the insulating layer U is not formed on both side end portions 39a and 39b on the surface 38a side of the substrate %. For the region where the insulating layer 18 is not formed, for example, the insulating layer 18 is formed. In the case of the If shape, the both end portions, the side surface portions, and the surface of the surface of the metal substrate (3) are shielded, and the insulating layer 18 is formed by anodization. The back surface electrode 21 at the left end of FIG. 5 is not formed to be connected to the aluminum substrate 38. The end portion 39b of the insulating layer 18 and the back surface electrode 21 are electrically connected to the aluminum substrate 38. Further, the second conductive member 34 is connected to the end portion 39a' of the aluminum substrate 38 where the insulating layer 18 is not formed, the second conductive member 34 and the aluminum substrate. In the present embodiment, the configuration of the metal substrate 12d is different from that of the first embodiment. Therefore, the detailed description of the present embodiment is omitted, but the same effects as those of the third embodiment can be obtained. In addition, in this real In the embodiment, since the aluminum substrate 38 is used as the metal substrate 12d, it is suitable for the case where the manufacturing process, the use environment, and the like are not required to have heat resistance. Further, the metal substrate 12d has a single-plate structure instead of a cladding structure. In comparison with the first embodiment, the material cost can be suppressed. However, in the present embodiment, the same substrate as the inscription substrate 38 of the fourth embodiment can be used for the aluminum substrate 38. Next, the sixth embodiment of the present invention is carried out. Fig. 6 (a) is a schematic cross-sectional view showing a solar cell sub-module according to a sixth embodiment of the photoelectric conversion device of the present invention. Fig. 6 (b) is a view showing a sixth embodiment of the photoelectric conversion device of the present invention. 38 201119064 Schematic plan view of the solar cell sub-module. In the present embodiment, the same components as those of the solar cell sub-module 1 丨 according to the second embodiment shown in the drawing are denoted by the same reference numerals. The solar cell sub-module i〇e of the present embodiment is compared with the solar cell sub-module 10 of the first embodiment (see FIG. 1), as shown in FIG. 6(a). guide The configuration of the member 32 is different, and the other configuration is the same as that of the solar battery sub-module 10 (see the drawing) of the first embodiment. Therefore, the detailed description thereof will be omitted. In the solar cell sub-module 1 of the embodiment, the first conductive member 32 is connected to the surface 26a of the transparent electrode 26 of the photoelectric conversion element 3, and the photoelectric conversion element 30 is formed on the back surface electrode 20a of the right end portion. In the present embodiment, as shown in Fig. 6(a), the j-th conductive member 32 is directly formed on the back surface electrode 2a of the right end portion. For example, it can be formed on the back surface by laser cutting or mechanical cutting. The photoelectric conversion element 30 on the electrode 2A is removed, so that the back electrode is exposed. In the present embodiment, only the formation position of the j-th conductive member 32 is different from that of the first embodiment. Therefore, the detailed description of the present embodiment is omitted, but the same effects as those of the third embodiment can be obtained. . Further, in the present embodiment, the second conductive member is formed directly on the back surface electrode 20a, whereby the heights of the second conductive member 32 and the second conductive member 34 can be made substantially the same. Therefore, the height of the first conductive member 32 and the second conductive member 34 connected to the terminal box is the same, so that the terminal box can be thinned. Further, for example, when the solar battery sub-mold 39 201119064 group l〇e shown in FIG. 6(b) is assembled into a solar battery module, it is necessary to wind the first conductive member 32 and the second conductive member 34 to the back side. However, the work of the wire to be wound can be made easy. In the present embodiment, the first conductive member 32 is directly formed on the back surface electrode 20a. However, in the first to fifth embodiments, the second conductive member 32 may be formed directly on the back surface. The configuration on the electrode 20a. Next, a seventh embodiment of the present invention will be described. Fig. 7 is a schematic cross-sectional view showing a solar battery sub-module according to a seventh embodiment of the photoelectric conversion device of the present invention. In the present embodiment, the same components as those of the solar cell sub-module 丨 of the second embodiment shown in the drawings are denoted by the same reference numerals, and detailed description thereof will be omitted. As shown in FIG. 7, the solar battery sub-module 10f of the present embodiment is compared with the solar battery sub-module 10 of the first embodiment (see the configuration of the metal substrate 12e and the arrangement of the second conductive member 34 in comparison with FIG. The other configuration is the same as that of the solar battery sub-module (7) of the second embodiment (see FIG. 1), and therefore detailed description thereof will be omitted. The solar battery of the embodiment shown in FIG. In the sub-module 1f, the metal substrate 12e is composed only of the substrate 38, and an insulating layer 18 including an anodized film is formed on the surface 38a of the substrate. In the present embodiment, the insulating layer 18 is not formed. Both end portions 39a, 39b on the surface 38a side of the substrate substrate are formed. After the insulating layer 18 is formed, the insulating layer 201119064l 18 is removed by, for example, laser cutting, whereby the formation of the insulating layer 18 can be formed as described above. Further, when the insulating layer 18 is formed by anodization, even if both end portions, side portions, and back surfaces of the metal substrate 12c are blocked, a region where the insulating layer 18 is not formed can be formed. Left end of 7 The back surface electrode 21 is connected to the end portion 3% of the aluminum substrate 38 where the insulating layer 18 is not formed, and the back surface electrode 21 is electrically connected to the name substrate. Further, the second conductive member 34 is formed on the back surface 38b of the aluminum substrate 38. The conductive member 34 is electrically connected to the aluminum substrate 38. In the present embodiment, only the configuration of the metal substrate 12e and the arrangement position of the second conductive member 34 are different from those of the first embodiment, and therefore, the present embodiment is omitted. In addition, in the present embodiment, since the metal substrate 12e of the second conductive member 34, that is, the back surface 38b of the aluminum substrate 38, is formed in the present embodiment, the solar cell module is formed. In the first embodiment, the first conductive member 32 and the second conductive member 34 are wound to the back surface 14b side. However, in the present embodiment, it is not necessary to turn the second conductive member % to the back side. Steps improve the workability. Further, since it is not necessary to wrap the second conductive member 34, the wiring can be shortened, and the material cost can be reduced. Further, in the present embodiment, the aluminum substrate is used as a gold. Since the substrate 12e is suitable for the manufacturing process, the use environment, and the like, heat resistance is not required. Further, since the metal substrate 12e has a single-plate structure instead of a cladding structure, 201119064 is compared with the first embodiment. In the present embodiment, the metal substrate 12 is not particularly limited. For example, the metal substrate 12 of the first embodiment, the metal substrate 12a of the second embodiment, and the metal substrate of the third embodiment can be used. 12b, the metal substrate 12c of the fourth embodiment, and the metal substrate 12d of the fifth embodiment. Next, an eighth embodiment of the present invention will be described. Fig. 8 is a view showing an eighth embodiment of the photoelectric conversion device according to the present invention. A schematic cross-sectional view of a battery sub-module. In the present embodiment, the same components as those of the solar cell sub-module 1A of the second embodiment shown in the drawings are denoted by the same reference numerals, and detailed description thereof will be omitted. As shown in FIG. 8, the solar cell sub-module 1〇g of the present embodiment and the solar cell sub-module 1〇 of the embodiment of the 彳1 (see FIG. The position at which the member 34 is formed is the position at which the back electrode 41 and the metal substrate 丨2 are connected, and the configuration of the photoelectric conversion; 50, and the other configuration is: the battery sub-module! (see the figure, the same configuration is detailed) In the light of the solar cell sub-module log of the present embodiment, the 7L burdock is referred to as a tandem photoelectric conversion element 50, which is constituted by the back electrodes 4G and 41 and the light 1 = 26. In addition, each photoelectric conversion = open slot (7) up to 2 poles 4) 51

42 201119064 於背面電極40與相鄰的背面電極40、41之間設置有 規定的間隔的分離槽（P1) 43，該背面電極40形成於絕 緣層18的表面18a，自金屬基板12側依序積層有Ag層 40a及ZnO層40b，從而構成該背面電極40。透明電極26 例如由ITO構成。 光電變換層42例如積層有光的吸收特性不同的兩個 光電變換組44a、44b。第1光電變換組44a設置於比第2 光電變換組44b更靠金屬基板12側’該第1光電變換組 44a與第2光電變換組44b相比較，具有波長區域長的吸 收特性。 第1光電變換組44a設置於背面電極40上，自金屬基 板12側積層有η型半導體層52、本質半導體層54a、以及 P型半導體層56，從而構成該第1光電變換組44a。於本 質半導體層54a中，例如可使用微結晶石夕、非晶發錯 (amorphous silicon germanium ) ° 第2光電變換組44b設置於第1光電變換組44&上， 自金屬基板12侧積層有n型半導體層52、本質半導體層 54b、以及p型半導體層56，從而構成該第2光電變換^ 44b。於本質半導體層54b巾，例如可使用非晶_。、、、 此外，光電變換層42中形成有到達背面電極4 的槽〇>2)45。該槽（P2)45填埋於透 巧止 於本實施形態中，光電變換元件5〇的 成為正極，背面電極40侧成為負極。亦即，第广二: 32成為負極’第2導電構件成為正極。再者，躲光電= 201119064 換層42，已例示了光的吸收特性不同的兩個光電變換組 44a、44b的積層構造，但不限定於此，可為3層構造，亦 可為3層以上的構造。 於本實施形態中’於未形成有絕緣層18的端部16a 處，背面電極41連接於金屬基板12。 此外，於本實施形態中，於未形成有絕緣層18的端部 16b處，第2導電構件34經由電極58而連接於金屬基板 12。藉此’將金屬基板12的鋁層16及不鏽鋼板Η作為導 體，使第2導電構件34與圖8中的右端的光電變換元件 50導通。 第1導電構件32連接於圖8的左端的背面電極40。 於該情形時，例如藉由雷射切割或機械切割來將形成於背 面電極40上的光電變換元件50除去，從而使背面電極4〇 露出。 此外’電極5 8為與为面電極40相同的構成。再者， 亦可不設置電極58而將第2導電構件34直接形成於金屬 基板12的端部16b。 於本實施形態中’與第1實施形態相比較，第1導電 構件32的形成位置、第2導電構件34的形成位置、背面 電極41與金屬基板12的連接位置、以及光電變換元件5〇 的構成不同，由於將金屬基板12用作導體，因此，雖省略 與本實施形態相關的詳細的說明，但可獲得與第1實施形 態相同的效果。 又，於本實施形態中，將第丨導電構件32直接形成於 201119064 背面電極40上，藉此，可使第1導電構件32與第2導電 構件34的高度大致相同。因此，當將太陽電池子模組i〇g 組裝為太陽電池模組時，雖必須將第1導電構件32與第2 導電構件34牽繞至背面側，但可使該牽繞的配線的作業變 得容易。 於本實施形態中，金屬基板12的構成並無特別限定， 例如可利用第2實施形態的金屬基板12a、第3實施形態 的金屬基板12b、第4實施形態的金屬基板12c、以及第5 實施形態的金屬基板12d。 接著，對本發明的第9實施形態進行說明。 圖9是表示本發明的光電變換裝置的第9實施形態的 太陽電池子模組的模式性剖面圖。 然而’於本實施形態中，對與圖1所示的第1實施形 態的太陽電池子模組10相同的構成物附上相同符號，且省 略其詳細的說明。 如圖9所示，本實施形態的太陽電池子模組i〇h與第 1實施形態的太陽電池子模組10 (參照圖1)相比較，光 電變換元件60的構成不同，除此以外的構成為與第1實施 形態的太陽電池子模組1〇(參照圖1)相同的構成，因此， 省略其詳細的說明。 圖9所示的本實施形態的太陽電池子模組1〇1ι的光電 變換元件60的不同點在於：光電變換層62為稱為CdTe (鎘碲（cadmium tellurium))型的光電變換層，且與第1 實施形態的CIGS系的光電變換層22相比較，組成為42 201119064 A separation groove (P1) is provided between the back surface electrode 40 and the adjacent back surface electrodes 40 and 41 at a predetermined interval. The back surface electrode 40 is formed on the surface 18a of the insulating layer 18, and sequentially from the metal substrate 12 side. The back surface electrode 40 is formed by laminating an Ag layer 40a and a ZnO layer 40b. The transparent electrode 26 is made of, for example, ITO. The photoelectric conversion layer 42 is, for example, laminated with two photoelectric conversion groups 44a and 44b having different light absorption characteristics. The first photoelectric conversion group 44a is disposed closer to the metal substrate 12 than the second photoelectric conversion group 44b. The first photoelectric conversion group 44a has a longer wavelength region than the second photoelectric conversion group 44b. The first photoelectric conversion group 44a is provided on the back surface electrode 40, and the n-type semiconductor layer 52, the intrinsic semiconductor layer 54a, and the P-type semiconductor layer 56 are laminated from the metal substrate 12 side to constitute the first photoelectric conversion group 44a. In the intrinsic semiconductor layer 54a, for example, an amorphous silicon germanium can be used, and the second photoelectric conversion group 44b is provided on the first photoelectric conversion group 44& The semiconductor layer 52, the intrinsic semiconductor layer 54b, and the p-type semiconductor layer 56 constitute the second photoelectric conversion 44b. For the intrinsic semiconductor layer 54b, for example, amorphous _ can be used. Further, a groove 〇>2) 45 reaching the back surface electrode 4 is formed in the photoelectric conversion layer 42. The groove (P2) 45 is buried in the present embodiment, and the photoelectric conversion element 5A becomes a positive electrode, and the back electrode 40 side serves as a negative electrode. That is, the second wide: 32 becomes the negative electrode' The second conductive member becomes the positive electrode. Further, the hiding layer 42 has a laminated structure of two photoelectric conversion groups 44a and 44b having different light absorption characteristics. However, the present invention is not limited thereto, and may have a three-layer structure or three or more layers. Construction. In the present embodiment, the back surface electrode 41 is connected to the metal substrate 12 at the end portion 16a where the insulating layer 18 is not formed. Further, in the present embodiment, the second conductive member 34 is connected to the metal substrate 12 via the electrode 58 at the end portion 16b where the insulating layer 18 is not formed. Thereby, the aluminum layer 16 of the metal substrate 12 and the stainless steel plate Η are used as conductors, and the second conductive member 34 is electrically connected to the photoelectric conversion element 50 at the right end in Fig. 8 . The first conductive member 32 is connected to the back surface electrode 40 at the left end of FIG. In this case, the photoelectric conversion element 50 formed on the back surface electrode 40 is removed by, for example, laser cutting or mechanical cutting, thereby exposing the back surface electrode 4 . Further, the 'electrode 58' has the same configuration as the surface electrode 40. Further, the second conductive member 34 may be formed directly on the end portion 16b of the metal substrate 12 without providing the electrode 58. In the present embodiment, the position at which the first conductive member 32 is formed, the position at which the second conductive member 34 is formed, the position at which the back surface electrode 41 is connected to the metal substrate 12, and the photoelectric conversion element 5'' are compared with the first embodiment. Since the metal substrate 12 is used as a conductor, the detailed description of the present embodiment is omitted, but the same effects as those of the first embodiment can be obtained. Further, in the present embodiment, the second conductive member 32 is directly formed on the back surface electrode 40 of 201119064, whereby the heights of the first conductive member 32 and the second conductive member 34 can be made substantially the same. Therefore, when the solar battery sub-module i〇g is assembled into the solar battery module, the first conductive member 32 and the second conductive member 34 must be wound to the back side, but the winding wiring can be operated. It's easy. In the present embodiment, the metal substrate 12 is not particularly limited. For example, the metal substrate 12a of the second embodiment, the metal substrate 12b of the third embodiment, the metal substrate 12c of the fourth embodiment, and the fifth embodiment can be used. The metal substrate 12d of the form. Next, a ninth embodiment of the present invention will be described. Fig. 9 is a schematic cross-sectional view showing a solar battery sub-module according to a ninth embodiment of the photoelectric conversion device of the present invention. In the present embodiment, the same components as those of the solar cell sub-module 10 of the first embodiment shown in Fig. 1 are denoted by the same reference numerals, and detailed description thereof will be omitted. As shown in FIG. 9, the solar cell sub-module i〇h of the present embodiment is different from the solar cell sub-module 10 (see FIG. 1) of the first embodiment in that the photoelectric conversion element 60 has a different configuration. The configuration of the solar cell sub-module 1 (see FIG. 1) of the first embodiment is the same as that of the first embodiment, and therefore detailed description thereof will be omitted. The photoelectric conversion element 60 of the solar cell sub-module 1 〇 1 of the present embodiment shown in FIG. 9 is different in that the photoelectric conversion layer 62 is a photoelectric conversion layer called CdTe (cadmium tellurium) type, and Compared with the CIGS-based photoelectric conversion layer 22 of the first embodiment, the composition is

45 S 20111906445 S 201119064

CdTe。除此以外的光電變換元件60的構成為與第1實施 形態的光電變換元件30相同的構成。因此，省略其詳細的 說明。 然而，CdTe的光電變換層62可藉由眾所周知的製造 方法來製造。 於本實施形態中，與第1實施形態相比較，僅光電變 換層62的組成不同，因此，雖省略與本實施形態相關的詳 細的說明’但可獲得與第1實施形態相同的效果。 對於上述各實施形態的太陽電池子模組l〇a〜l〇h而 & ’可與第1實施形態的太陽電池子模組10 (參照圖1) 同樣地，將密封接著層、水蒸氣阻障層及表面保護層配置 於太陽電池子模組l〇a〜l〇h的表面侧，且將密封接著層及 後罩薄片配置於太陽電池子模組10a的背面侧，例如藉由 真空層壓法來進行層壓加工而使上述各層一體化，從而獲 得太陽電池模組。 π工现仕一個貫施形態中，如圖6 (b)所示，第i導 電，構件32及第2導電構件34彼此平行，且沿著金屬基板 的邊而於-個方向上較長。此外，於任一個實施形態 =圖6 (b)所7F，當將金屬基板12的—邊的長度設 二:^與第2導電構件34導通的背面電極21的長 二較佳為金屬基板12的邊的長度L的1/2以上。藉此， 可確保背面電極21與金屬基板12的良好的導通。 矩形實施形態_，較佳為，金屬基板為 'J邊的蠕部存在未形成有絕緣層的區域， 201119064 且金屬基板露出。於該情开$样，6(ί_# s 。^ 對向的2邊。^㈣’所㈤至少2邊，較佳為相 而且上述任—個實施形態中，金屬基板為矩形狀， t端部設置有連接於金屬基板的導體部的導 體。於該情形時，所謂至少2邊，較佳為相對向的2邊。 而且二於上述任一個實施形態中，將太陽電池子模组 作為例子來對光電變換裳置進行了說明，且將串聯連接有 = t太陽電池單元)的所謂積體型的太陽 =器件作為鮮㈣光學㈣器件進行了說明，但本發 二：==匕二於本發明中’例如亦可為因採用積體型 構把而具有放大作用的光學感測器（咖〇小此外 變換器件亦可包括有機電致發光⑽伽bines'， L ) το件’先電變換裝置亦可為有機肛顯示器（d㈣朴 勺二上述任—個實施形態中，光電變換器件亦可 :括薄膜型薄膜太陽電池單元或薄膜 者積體型太陽電池單元或積體型薄膜光電變換元件 拖-ίΐί任一個實施形態中，太陽電池子模組的光電變 成並不特別限定於⑽系光電變換元件、串 如，變換几件、以及CdTe系光電變換元件，例 S膜/系太陽電池單元或薄_系光電變換元 電池單m魏化系光電變換元 件或者有機系太陽電池單元或有機系光電變換元件。 電變本上如上所述。以上，詳細地對本發明的光 電變換裝置進行了說明，但本發明並不限定於上述實施形CdTe. The other configuration of the photoelectric conversion element 60 is the same as that of the photoelectric conversion element 30 of the first embodiment. Therefore, detailed description thereof will be omitted. However, the photoelectric conversion layer 62 of CdTe can be manufactured by a well-known manufacturing method. In the present embodiment, the composition of the photoelectric conversion layer 62 is different from that of the first embodiment. Therefore, the detailed description of the present embodiment is omitted, but the same effects as those of the first embodiment can be obtained. In the same manner as the solar battery sub-module 10 (see FIG. 1) of the first embodiment, the solar cell sub-modules 10a to 10h can be sealed with the water layer. The barrier layer and the surface protective layer are disposed on the surface side of the solar cell sub-modules 10a to 10h, and the sealing adhesive layer and the back cover sheet are disposed on the back side of the solar cell sub-module 10a, for example, by vacuum. The lamination method is used for lamination processing to integrate the above layers to obtain a solar cell module. In the case of the π work, as shown in Fig. 6(b), the ith conduction, the member 32 and the second conductive member 34 are parallel to each other, and are longer in one direction along the sides of the metal substrate. Further, in any of the embodiments = FIG. 6(b), 7F, when the length of the side of the metal substrate 12 is set to two: the length of the back surface electrode 21 which is electrically connected to the second conductive member 34 is preferably the metal substrate 12 The length of the side of the side is 1/2 or more. Thereby, good conduction between the back surface electrode 21 and the metal substrate 12 can be ensured. In the rectangular embodiment, it is preferable that the metal substrate has a region where the insulating portion of the 'J side is not formed with the insulating layer, and 201119064, and the metal substrate is exposed. In this case, 6 (ί_# s. ^ 2 sides of the opposite direction. ^ (4) '(5) at least 2 sides, preferably phase and in any of the above embodiments, the metal substrate is rectangular, t-end The conductor is connected to the conductor portion of the metal substrate. In this case, at least two sides are preferably two opposite sides. Further, in any of the above embodiments, the solar battery sub-module is taken as an example. The photoelectric conversion skirt is described, and the so-called integrated solar=device in which the = t solar cell unit is connected in series is described as a fresh (four) optical (four) device, but the present invention is as follows: In the invention, for example, an optical sensor having an amplification effect by using an integrated structure can also be used. (Curry small conversion device can also include organic electroluminescence (10) gambins', L) τ ο '' electric conversion device Alternatively, the organic anal display (d(4)) can be used in any of the above embodiments, and the photoelectric conversion device can also include a thin film type thin film solar cell unit or a thin film integrated solar cell unit or an integrated thin film photoelectric conversion element. Any one In the form, the photoelectric conversion of the solar cell sub-module is not particularly limited to (10) photoelectric conversion elements, strings, and several conversions, and CdTe-based photoelectric conversion elements, for example, S-film/system solar cells or thin-type photoelectric conversion The photovoltaic cell is a single m-weihua photoelectric conversion element or an organic solar cell or an organic photoelectric conversion element. The electric transformer is as described above. The photoelectric conversion device of the present invention has been described in detail above, but the present invention is not Limited to the above implementation form

S 47 201119064 態，當然亦可於不脫離本發明的宗旨的範圍内進行各種改 良或變更。 雖然本發明已以較佳實施例揭露如上’然其並非用以 限定本發明，任何熟習此技藝者，在不脫離本發明之精神 和範圍内’當可作些許之更動與潤飾，因此本發明之保護 範圍當視後附之申請專利範圍所界定者為準。 【圖式簡單說明】 圖1是表示本發明的光電變換裝置的第1實施形態的 太陽電池子模組的模式性剖面圖。 圖2是表示本發明的光電變換裝置的第2實施形態的 太陽電池子模組的模式性剖面圖。 圖3是表示本發明的光電變換裝置的第3實施形態的 太陽電池子模組的模式性剖面圖。 圖4是表示本發明的光電變換裝置的第4實施形態的 太陽電池子模組的模式性剖面圖。 圖5是表示本發明的光電變換裝置的第5實施形態的 太陽電池子模組的模式性剖面圖。 圖6 (a)是表示本發明的光電變換裝置的第6實施形 態的太陽電池子模組的模式性剖面圖，圖6 (b)是表示本 發明的光電變換裝置的第6實施形態的太陽電池子模組的 模式性平面圖。 圖7是表示本發明的光電變換裝置的第7實施形態的 太陽電池子模組的模式性剖面圖。 圖8是表示本發明的光電變換裝置的第8實施形態的 48 201119064 太陽電池子模組的模式性剖面圖。 圖9是表示本發明的光電變換裝置的第9實施形態的 太陽電池子模組的模式性剖面圖。 圖10是表示先前的太陽電池模組的模式性剖面圖。 圖11 (a)〜圖11 (d)是按照步驟順序來表示先前的 太陽電池模組的製造方法的模式圖。 【主要元件符號說明】 10、10a〜10h、102 :太陽電池子模組 12、12a〜12e :金屬基板 14 :不鏽鋼板 14a、18a、26a、38a、102a :表面 14b、38b、102b :背面 14c :側面 16、17、36 :鋁層 16a、16b、17a、17b、36a、36b、36c、36d :兩端部 18、19 :絕緣層 20、20a ' 21、40、41 :背面電極 22、 42、62 :光電變換層 23、 43 :分離槽 24 :緩衝層 25 、 45 :槽 26 :透明電極 27、51 :開口槽 30、50、60 :光電變換元件It is a matter of course that various modifications or changes can be made without departing from the spirit and scope of the invention. While the present invention has been described in its preferred embodiments, the present invention is not intended to limit the invention, and the present invention may be modified and modified without departing from the spirit and scope of the invention. The scope of protection is subject to the definition of the scope of the patent application. [Brief Description of the Drawings] Fig. 1 is a schematic cross-sectional view showing a solar battery sub-module according to a first embodiment of the photoelectric conversion device of the present invention. Fig. 2 is a schematic cross-sectional view showing a solar battery sub-module according to a second embodiment of the photoelectric conversion device of the present invention. Fig. 3 is a schematic cross-sectional view showing a solar battery sub-module according to a third embodiment of the photoelectric conversion device of the present invention. Fig. 4 is a schematic cross-sectional view showing a solar battery sub-module according to a fourth embodiment of the photoelectric conversion device of the present invention. Fig. 5 is a schematic cross-sectional view showing a solar battery sub-module according to a fifth embodiment of the photoelectric conversion device of the present invention. Fig. 6 (a) is a schematic cross-sectional view showing a solar cell sub-module according to a sixth embodiment of the photoelectric conversion device of the present invention, and Fig. 6 (b) is a view showing a solar cell according to a sixth embodiment of the photoelectric conversion device of the present invention. A schematic plan view of the battery sub-module. Fig. 7 is a schematic cross-sectional view showing a solar battery sub-module according to a seventh embodiment of the photoelectric conversion device of the present invention. Fig. 8 is a schematic cross-sectional view showing a 48 201119064 solar battery sub-module according to an eighth embodiment of the photoelectric conversion device of the present invention. Fig. 9 is a schematic cross-sectional view showing a solar battery sub-module according to a ninth embodiment of the photoelectric conversion device of the present invention. Fig. 10 is a schematic cross-sectional view showing a prior solar battery module. 11(a) to 11(d) are schematic views showing a method of manufacturing a conventional solar cell module in the order of steps. [Description of main component symbols] 10, 10a to 10h, 102: Solar battery sub-modules 12, 12a to 12e: Metal substrate 14: Stainless steel plates 14a, 18a, 26a, 38a, 102a: Surfaces 14b, 38b, 102b: Back surface 14c : side faces 16, 17, 36: aluminum layers 16a, 16b, 17a, 17b, 36a, 36b, 36c, 36d: both end portions 18, 19: insulating layers 20, 20a ' 21, 40, 41: back electrodes 22, 42 62: photoelectric conversion layers 23, 43: separation grooves 24: buffer layers 25, 45: grooves 26: transparent electrodes 27, 51: open grooves 30, 50, 60: photoelectric conversion elements

49 S 201119064 分· * AT ▲ 31 :光電變換器件 32 :第1導電構件 32a、34a :銅帶 32b、34b :包覆材料 34 :第2導電構件 38 :鋁基板 39a〜39d :端部 40a : Ag 層 40b : ZnO 層 44a :第1光電變換組 44b :第2光電變換組 52 : η型半導體層 54a、54b :本徵半導體層 56 : p型半導體層 58 :電極 100 :太陽電池模組 104 :玻璃基板 106: EVA樹脂層 108 :蓋玻璃 110 :後罩薄片 112 :接電箱 114 :纜線 116 :密封材料 118 :框架 50 201119064 120、122 :配線 124 :覆蓋層 L、X :長度49 S 201119064 min. * AT ▲ 31 : photoelectric conversion device 32 : first conductive member 32 a , 34 a : copper tape 32 b , 34 b : cladding material 34 : second conductive member 38 : aluminum substrate 39 a to 39 d : end portion 40 a : Ag layer 40b: ZnO layer 44a: first photoelectric conversion group 44b: second photoelectric conversion group 52: n-type semiconductor layers 54a, 54b: intrinsic semiconductor layer 56: p-type semiconductor layer 58: electrode 100: solar cell module 104 : Glass substrate 106: EVA resin layer 108: Cover glass 110: Back cover sheet 112: Electrical box 114: Cable 116: Sealing material 118: Frame 50 201119064 120, 122: Wiring 124: Cover layer L, X: Length

Claims (1)

201119064 七、申請專利範圍： L 一種光電變換裝置，包括： 金屬基板，形成有作為電導體而發揮作用的導體部以 及於上述導體部的至少表面上之電的絕緣層； 光電變換器件’形成於上述絕緣層上； 第1導電構件’連接於上述光電賴^件的正極及負 柄I的-個電極，且將上述光電變換器件的輸出自上述-個電極傳輸至外部； I ，電部’將上述光電變換器件的上述負極及上述正極 一個電極連接於上述金屬基板的上述導體部；以及 2導電構件’以經由上述金屬基板的 述板的上述導體部，且將上述輸出自上 部而傳輸至外=上34金屬基板的上述導體部及上述接電 的-1二導電構件連接於上述金屬基板的上述導體部 變換裝置，其中 一上述第2導電構件相接近地設置著。 置，|中上圍第1項或第2項所述的光電變換裝 絶緣i 板於上料體部的端部未形成有上述 的上鱗極藉由上雜電㈣賴於上述導體部 52 201119064 4, 如申請專利範圍第1項或第2項所述的光電變換裝 置’其中上述金屬基板為大致矩形， 於上述金屬基板的至少2邊的端部設置有與上述 部導通的電導體， 上述第2導電構件連接於上述電導體，且經由上述電 導體而與上述導體部導通。 5. 如申晴專利範圍第1項或第2項所述的光電變換裝 置，其中上述金屬基板為大致矩形， 於上述金屬基板的至少2邊的端部設置有未形成有上 述絕緣層的上述導體部的區域， 上述第2導電構件直接地連接於上述導體部的區域。 •如申明專利範圍苐1項或第2項所述的光電變換裝 置其中上述金屬基板為大致矩形， 上述光電變換器件包括與上述金屬基板的邊平行的上 述正極及上述負極， 上述正極及上述負極的長度為上述金屬基板的邊的長 度的1/2以上。 7.如申請專利範圍第i項或第2項所述的光電變換裝 ，其中上述金屬基板為大致矩形， 絕緣ΐ上述金屬基板的相對向的2邊_部未形成有上述 極，上述光電變換！!件於兩端部設置有上述正極及上述負 上述正極及上述負極中的上述另一個電極以上述接電 53 201119064 部處連接於上勒對㈣2邊巾的—邊的上 邊的電構件連接於上述相對向的2邊二^ =電變換器件的上述另一個電極經 =述金屬基板的上述導體部而與上述第2導電 署請專利範圍第1項或第2項所述的光電變換裝 件，，其中上述先電變換器件串聯地連接有多個光電變換元 自上述第2導電構件傳輸至上述外部的上述 與上Μ電變換器件内的全部的光電變 換7L件的最尚電位大致—致。 番9甘!0申請專利範圍第1項或第2項所述的光電變換裝 〜认接i述光學變換器件為串聯地連接有多個太陽電池 早7L的積體型的光學變換器件。 10’如申明專利範圍第J項或第2項所述的光電變換 裝置’/、+上述光電變換器件包括賴型太陽電池單元。 11.如申請專利範圍第i項或第2項所述的光電變換 置其中光電變換器件包括CIS *薄膜型太陽電池 早元三CIGS系薄膜型太陽電池單元、薄膜石夕系薄膜型太陽 電池單7G、CdTe㈣卿太陽電池單^、m v屬系薄膜 型太陽電池單元、染料敏化系薄膜型太陽電池單元、以及 有機系薄膜型太陽電池單元中的任一個薄膜型太陽電池單201119064 VII. Patent application scope: L A photoelectric conversion device comprising: a metal substrate formed with a conductor portion functioning as an electrical conductor and an electrical insulating layer on at least a surface of the conductor portion; a photoelectric conversion device formed in On the insulating layer; the first conductive member ' is connected to the positive electrode of the photoelectric device and the one electrode of the negative handle I, and the output of the photoelectric conversion device is transmitted from the above-mentioned electrode to the outside; I, the electric portion' The negative electrode and the positive electrode of the photoelectric conversion device are connected to the conductor portion of the metal substrate; and the second conductive member 'transports the conductor portion through the plate of the metal substrate, and the output is transmitted from the upper portion to the upper portion. The conductor portion conversion device in which the conductor portion of the upper 34 metal substrate and the electrically-charged -1 two-conducting member are connected to the metal substrate, wherein one of the second conductive members is disposed close to each other. The photoelectric conversion-mounted insulating i-plate according to item 1 or item 2 of the upper middle is not formed with the above-mentioned upper scale electrode at the end portion of the upper body portion by the upper electric power (4) depending on the conductor portion 52 The photoelectric conversion device of the first or second aspect of the invention, wherein the metal substrate is substantially rectangular, and an electrical conductor that is electrically connected to the portion is provided at an end of at least two sides of the metal substrate. The second conductive member is connected to the electric conductor and is electrically connected to the conductor portion via the electric conductor. 5. The photoelectric conversion device according to the first or second aspect of the invention, wherein the metal substrate is substantially rectangular, and the end portion of at least two sides of the metal substrate is provided with the above-mentioned insulating layer. In the region of the conductor portion, the second conductive member is directly connected to the region of the conductor portion. The photoelectric conversion device according to the above aspect, wherein the metal substrate is substantially rectangular, and the photoelectric conversion device includes the positive electrode and the negative electrode parallel to a side of the metal substrate, and the positive electrode and the negative electrode The length is 1/2 or more of the length of the side of the metal substrate. 7. The photoelectric conversion device according to Item 1, wherein the metal substrate is substantially rectangular, and the opposite side of the insulating substrate is not formed with the electrode, and the photoelectric conversion is performed. ! The other one of the positive electrode and the negative positive electrode and the negative electrode are connected to the upper end, and the electrical component connected to the upper side of the upper side of the pair of four (2) 2 wipes is connected to the electrical component 53 201119064 The other electrode of the two-side two-electrode-converting device is electrically coupled to the conductor portion of the metal substrate and the photoelectric conversion device according to the second or second aspect of the second conductive application. The first electro-optical conversion device is connected in series with a plurality of photoelectric conversion elements that are transmitted from the second conductive member to the outermost of the photoelectric conversion 7L of the upper electroconducting device. . In the photoelectric conversion device described in the first or second aspect of the invention, the optical conversion device is an integrated optical conversion device in which a plurality of solar cells are connected in series by 7L. 10' The photoelectric conversion device '/, the above-mentioned photoelectric conversion device according to the above-mentioned claim or the second aspect of the invention includes a solar cell. 11. The photoelectric conversion device according to claim i or item 2, wherein the photoelectric conversion device comprises a CIS * thin film type solar cell, the early third CIGS thin film type solar cell unit, and the thin film smear type solar cell type 7G, CdTe (4) Qing solar cell single ^, mv genus film type solar cell unit, dye sensitized film type solar cell unit, and organic thin film type solar cell unit 54 201119064 12.如申請專利範圍帛】項或第2項所述的光電變換 中上述光電變換器件包括基板型構造的薄膜型太 IW電池早元。 I 如巾請專概圍第1項或第2項所述㈣電變換 ^ /、中上述金屬基板於兩個面或單面形成有絕緣層。 梦署4甘如申料利範圍第1項或第2項所述的光電變換 ^ 中上述絕緣層是由包含氧化銘 中 的至少一種物質的層所構成。 麥詈6=申μ專概圍第1項或第2項所述的光電變換 t_L述金屬基板包括不鏽她或她。54 201119064 12. The photoelectric conversion device according to the invention of claim 2 or 2, wherein the photoelectric conversion device comprises a thin film type IW battery of a substrate type structure. I If you want to cover the towel, please refer to the first or the second item. (4) Electrical conversion ^ /, The above metal substrate is formed with an insulating layer on two sides or one side. The above-mentioned insulating layer is composed of a layer containing at least one substance of oxidized in the photoelectric conversion method described in the first or second item of the invention.麦詈6=申μSpecially, the photoelectric conversion described in item 1 or item 2 of the t_L metal substrate includes stainless her or her. 裝罟Ί中睛專利範圍第1項或苐2項所述的光電變換 置’其中上述金；|基㈣主齡為紹。 裝置 鋼板 18·如 裝置，其中 55The photoelectric conversion device described in item 1 or item 2 of the 罟Ί 罟Ί 专利 ’ 其中 其中 其中 其中 其中 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 Device steel plate 18 · such as the device, of which 55
TW099130093A 2009-09-30 2010-09-06 Photoelectric converter TW201119064A (en)

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