201118033 六、發明說明： 【發明所屬之技術頷域】 本發明係有關於—接增罢姐& 能之微檣♦胺番“ 構件，尤指一種提升遮蔽功 法與由复$ \肖之具有金屬化凹部之覆蓋構件及其製 ' /、所製成的微機電裝置封裝件。 【先前技術】 mems 長支機電（miCr〇_ electr〇- mechanical system， 動、t )裴置例如擴音器（microphone)廣泛地使用在行 立器κπ備、音訊裝置等；為達微小化之目的，可將該擴 之:、尺寸縮小，以製成用於助聽單元（hearing aid unit) :合式擴音器（Condenser microphone)，但該電容式擔 _ 難以避免外界干擾例如傳訊器（transducer )之内部 :牛而s亥傳訊器不僅零件容易受損，且其傳遞訊號容易 ^衣=衫響；因此，習知電容式擴音器不僅聲壓需配合功 、的求，且需具備遮蔽内部元件之功能，以避免光及電 磁之干涉，—般常見的電容式擴音器可參閱第1圖。 如苐1圖所示，習知電容式擴音器係包括：第一基板 10、以導電黏著層13結合於該第一基板10上之導電板體 及以另一導電黏著層13，結合於該導電板體11上之 第基板12 ;該第一及第二基板1〇，12係由模片100及背 板101所構成，且該第一基板10上設有聽孔102、半導體 a曰片14及位於聽孔1〇2上之傳訊器15 ;該導電板體11形 成有牙孔110，以形成具有不同聲壓之空間，且對應容設 έ亥半導體晶片14及傳訊器1 5。 111080R02 201118033 ★白知電4式擴音$藉由第—基板1G、導電板體11、 及第二基板12構成保護空間，以使該半導體晶片14及傳 訊器15與外界隔絕，而達到遮蔽之效果。，然，該導電黏著 層^與該導電板體n之材質並不相同，將使該電容式擴 音益之側面之遮蔽功效不佳。 ^因此，如何避免且克服習知技術中之問題，實已成目 前亟欲解決的課題。 【發明内容】 一蓉於上述習知技術之缺失，本發明之主要目的係提供 一種提升遮蔽功能之微機電裝置之覆蓋構件及其製法、及 由其所製成的微機電裝置封裝件。 =上述及其他目的，本發明揭露—種微機電裝置之 覆I構件’係包括··第一板體’係具有相對之第一及第二 表面’且該第-表面設有第-金屬層，並具有貫穿該第I 板體及第-金屬層及該第一金屬層之開口 ^ =目對之第三及第四表面;黏著層，係夹設於板體 面與該第二板體之第三表面之間，以結合該第一 板體與弟二板體，並使該第二板體之第三表面封住該開口 t端，以形成凹部；以及第—導體層，係覆設於該開口 的側壁面及露出於該開口一端的第三表面上。 本發明復揭露一種微機電裝置之覆蓋構件之夢法， 3::供-具有相對之第一及第二表面之第一板體，且 忒弟一表面上設有初始金屬層；於該第一板 層及第二表面上粗糙化，令該初始金屬層形成第J:屬 1H080R02 4 201118033 凹 凹 層；於該第一板體之第二表面上形成黏著層；於該第—金 屬層、第一板體及黏著層形成貫穿之開口；提供—具有相 對之第二及第四表面之第二板體，將該第二板體之第三表 面結合至該黏著層上，而覆蓋該開口以形成凹部，使該" 部具有底表面及相鄰之側表面；以及於該第—金屬層、 部之底表面及側表面上形成第一導體層。201118033 VI. Description of the invention: [Technical field to which the invention belongs] The present invention relates to a component of "successful stimuli", especially a kind of lifting shading method and by the complex $\肖之a covering member having a metallized recess and a fabricated microelectromechanical device package. [Prior Art] mems long arm electromechanical (miCr〇_ electr〇- mechanical system, motion, t) such as amplification Microphones are widely used in erecting devices, audio devices, etc.; for the purpose of miniaturization, the expansion: size can be reduced to make a hearing aid unit: Condenser microphone, but the capacitive load _ is difficult to avoid external interference such as the inside of the transducer: the cow and the shai transmitter are not only easy to damage the parts, but also the signal transmission is easy; Therefore, the conventional condenser microphone not only needs to match the sound pressure, but also needs to shield the internal components to avoid the interference of light and electromagnetic. The common condenser loudspeaker can be referred to Figure 1. As shown in Figure 1 The conventional condenser speaker includes a first substrate 10, a conductive plate body bonded to the first substrate 10 with a conductive adhesive layer 13, and a conductive adhesive layer 13 bonded to the conductive plate body 11. The first substrate and the second substrate 1 and 12 are formed by the die 100 and the back plate 101. The first substrate 10 is provided with an audible hole 102, a semiconductor a cymbal 14 and an accommodating hole. The antenna 15 of the conductive plate 11 is formed with the dental hole 110 to form a space having different sound pressures, and correspondingly accommodates the semiconductor chip 14 and the microphone 15. 51080R02 201118033 ★白知电The type 4 sound reinforcement $ forms a protective space by the first substrate 1G, the conductive plate body 11, and the second substrate 12, so that the semiconductor wafer 14 and the signal 15 are isolated from the outside to achieve the shielding effect. The conductive adhesive layer is not the same as the material of the conductive plate n, so that the shielding effect of the side of the capacitive sound reinforcement is not good. ^ Therefore, how to avoid and overcome the problems in the prior art has become the current The subject to be solved. [Summary of the Invention] The main object of the present invention is to provide a covering member for a microelectromechanical device for improving the shielding function, a method for manufacturing the same, and a microelectromechanical device package made therefrom. = The above and other objects, the present invention discloses a microelectromechanical device The covering member of the device includes: the first plate body has a first and second surfaces opposite to each other, and the first surface is provided with a first metal layer and has a first plate body and a metal portion a layer and an opening of the first metal layer; a third and a fourth surface; the adhesive layer is interposed between the surface of the plate body and the third surface of the second plate body to bond the first plate body a second plate body, and the third surface of the second plate body is sealed to the opening t end to form a recess; and the first conductor layer is disposed on the side wall surface of the opening and exposed at one end of the opening On the third surface. The invention discloses a method for covering a covering member of a microelectromechanical device, 3: providing a first plate body having a first surface and a second surface, and an initial metal layer is provided on a surface of the younger brother; Roughening a layer and a second surface, forming the initial metal layer to form a J: genus 1H080R02 4 201118033 concave concave layer; forming an adhesive layer on the second surface of the first plate; in the first metal layer, a plate and an adhesive layer forming an opening therethrough; providing a second plate having opposite second and fourth surfaces, the third surface of the second plate is bonded to the adhesive layer to cover the opening Forming a recess such that the " portion has a bottom surface and an adjacent side surface; and forming a first conductor layer on the bottom surface and the side surface of the first metal layer, the portion.
由上可知，本發明藉由該第一板體形成凹部之側表 面，使該凹部之兩側表面之材質一致，以提升該第一板體 之内側壁遮蔽功效，相較於習知技術中所使用之不同材質 側表面，俾本發明可達到提升遮蔽功能之目的。 貝 【實施方式】 以下藉由特定的具體實施例說明本發明之實施方 式，熟悉此技藝《人士彳由本說明書所揭示之内容輕易地 瞭解本發明之其他優點及功效。 凊芩閱第2A至2L圖，係為一種微機電裝置之覆蓋構 •件之製法。如第2A圖所示，提供—具有相對之第一及第 二表面20a，20b之第一板體20’且該第一及第二表面 2〇a，20b上設有初始金屬層211。然’該初始金屬層^丨係 選擇性地形成於該第一板體20的第二表面2%上。 如第2B圖所示，藉由蝕刻製程，於該第—及第二表 面20a，20b上之初始金屬層211進行粗糙化及薄化令^ 第一表面20a之初始金屬層211形成第_金屬層，而 該第二表面20b之初始金屬層211形成供作為另一金屬層 之第二金屬層21b。 曰 111080R02 5 201118033 如第2C、2D圖所示，於該第二金屬層21b上形成係 為非導體層之黏著層22，如第2C圖所示；再於該第一金 屬層21a、第一板體20及黏著層22形成貫穿之開口 200， 如第2D圖所示。 如第2E圖所示，提供一具有相對之第三及第四表面 23a,23b之第二板體23，該第二板體23之第三及第四表面 23a,23b上選擇性地分別具有第三及第四金屬層24a,24b， 且該第三金屬層24a係作為中間金屬層（intermediate metal layer)並結合至該黏著層22上，以藉由該第二板體23覆蓋 該開口 200之一側，令該開口 200形成凹部201，使該凹 部201係具有底表面201a及相鄰之兩側表面201b。該第 一板體20及該第二板體23係由相同的材料所製成，例如， BT(Bismaleimide-triazine)核心材料或塑膠。如第2F圖所 示，於該凹部201中之底表面201a的第一金屬層24a及側 表面201b上藉由電鍍製程或濺鍍製程形成第一導體層 25a，且於該第四金屬層24b上形成第二導體層25b，該第 一導體層25a之厚度較佳為10微米（pm)以上；另外，於形 成係為銅之第一及第二導體層25a，25b之前，可先形成晶 種層（seed layer)(未圖示），該晶種層主要作為電鑛金 屬所需之電流傳導路徑，其可由金屬、合金、沉積數層金 屬層所構成。 如第2G、2H圖所示，於該第一導體層25a上形成阻 層26，如第2G圖所示；再移除該第二導體層25b及第四 金屬層24b，如第2H圖所示。 6 111080R02 201118033 如第21、2J圖所示，移除該阻層26,如第21圖所示； 再於該第一導體層25a上形成表面處理層27,且該表面處 理層27之材料係為錄、Ιε、金、錫、不鏽鋼所組群組之其 中一者，如第2J圖所示。 本發明藉由結合兩片相同材料的板體，即該第一板體 20及該第二板體23，以形成該凹部201，且亦使用相同材 質（如第一導體層25a)覆蓋於凹部201内，以提升該第 一板體20之内側壁之遮蔽功效。 如第2K圖所示，於該第二板體23、第三金屬層24a、 該凹部201之底表面201a、第一導體層25a及表面處理層 27形成貫穿之孔洞230。因此，可得到用於微機電裝置之 覆蓋構件50，其包含該第一板體20、該第二板體23、該 黏著層22、及該第一導體層25a。該第二板體23選擇性地 具有設於其上之第三金屬層24a。該黏著層22係設於該第 二金屬層21b上，以結合至該第二板體23上之第三金屬層 24a上、或直接結合至未有該第三金屬層24a之第二板體 23上。 如第2L圖所示，於後續製程中，將本發明應用於一 例如為電路板之承載板28上以形成一封裝件60。該封裝 件60容置設於該承載板28上之例如為MEMS晶片29a或 ASIC (Application Specific Integrated Circuit,特殊用途積 體電路）晶片29b之半導體元件29,藉以形成微機電裝置， 例如，聲音換能器70、麥克風、壓力感測器、或通量感測 器。且該第一板體20之第一表面20a之第一導體層25a 7 111080R02 201118033 藉由導電結合層30結合至該承載板28上，以達成接地並 讀保遮蔽電磁干擾（Electromagnetic Interference，EMI)，而 該凹部201對應容納該半導體元件29;另外，該承載板28 亦具有對應該孔洞230之穿孔，以傳達訊號。 在作為麥克風之實施例中，孔洞230形成聲音埠 (acoustic port)，以使音波得以進入。在其他實施例中，孔 洞230形成琿，以令壓力波或其他可量測之量化體進入。 該第一及第二板體20、23皆使用BT核心材料，令該 製作方法類似於製造球柵陣(Ball Grid Array，BGA)基板的 方法’此可藉由使用已具備的技術及設備，而容易、可靠 並便宜地製造該等部件，也可採用大量生產技術，以進_ 步降低成本。此外，較容易採用對不同内部及外部尺寸的 設計’而不會在供應側及封裝階段花費過多的工具成本。 尤其是’有可能依據半導體元件29的矽特性而具有不同的 凹部尺寸，以正確結合完美的頻率響應及訊D喿比 (Signal-to-Noise Ratio，SNR)。 第3圖顯示在該封裝件60中形成微機電擴音器之聲 音換能器70。 該聲音換能器70包含該MEMS晶片29a及該ASIC 晶片29b。該MEMS晶片29a基本上係由響應於聲音刺激 (acoustic stimuli)的微機電感測器所組成，該ASIC晶片2% 係裝配來對該MEMS晶片29a施加正破偏壓，用以處理所 產生的電容性變異訊號，並於該聲音換能器7〇之輸出〇υτ 上提供數位訊號，該數位訊號可接著被相關電子裝置的微 U1080R02 8 201118033 控制器處理。 該ASIC晶片29b包含：類比式前置放大器電路71， 係設計用來與MEMS晶片29a直接介接，並具有前放大功 能，該前放大功能用來放大（及適當地過濾）該MEMS晶片 29a所產生的電容性變異訊號；充電泵73，係能產生適當 的電壓，用來施加偏壓於該MEMS晶片29a ;類比數位轉 換器74，例如三角積分式（sigma-delta type)，係組構用來 接收時脈訊號（clock signal) CK及該前置放大器電路71 鲁所放大的差分訊號，並將該差分訊號轉換成數位訊號；參 考訊號產生器電路75 ’係連接至該類比數位轉換器74，並 且係設計用來供應該類比數位轉換所需之參考訊號；以及 驅動器76，係設計用來成為該類比數位轉換器74及外部 系統之間的介面，該外部系統例如為相關電子裝置之微控 制器。 二 此外，該聲音換能器70可包含揮發式或非揮發式記 #憶體78,例如可外部程式化，以依據不同的組態、，例如增 益組態，而致能該聲音換能器7〇之使用。 θ 該聲音換能器70可使用於電子裝置8〇中，如第4圖 所顯示。該電子裂置80例如是—種行動通訊可搞式装置， 例如行動電話、個人數位助理（PDA)、筆記型電腦，但也 可疋耳θ 己錄A、具有聲音記錄能力之音訊樓案讀取器 等。或者’該電子裝置8G可為—種可操作於水下之水^ 音器（hydrophone)、或-種助聽裝置。 該電子裝置80包含微處理器81及連接至該微處理器 111080R02 9 201118033 81之輸入/輸出介面83，該輸入/輸出介面83例如設有鍵 盤及顯示器。該聲音換能器70經由訊號處理之方塊85(其 可對該聲音換能器70所輸出的數位訊號實現進一步的處 理操作）而與該微處理器81通訊。此外，該電子裝置80可 包含揚聲器（l〇u(ispeaker)86及内部記憶體87,該揚聲器86 係用來於音訊輸出（未顯示）上產生聲音。 上述實施例係用以例示性說明本發明之原理及其功 效，而非用於限制本發明。任何熟習此項技藝之人士均可 在不違背本發明之精神及範疇下，對上述實施例進行修 改。因此本發明之權利保護範圍，應如後述之申請專利範 圍所列。 【圖式簡單説明】 第1圖係為習知電容式擴音器之剖視示意圖； 第2A至2L圖係為本發明微機電裝置所用之覆蓋構件 之製法之剖視示意圖； 第3圖顯示由第2L圖所得到之電容性聲音換能器之 簡化方塊圖；以及 第4圖顯示包含聲音換能器之電子裝置之簡化方塊 圖。 【主要元件符號說明】 10 第一基板 100 模片 101 背板 102 聽孔 ]〇 111080R02 201118033It can be seen from the above that the first plate body forms the side surface of the concave portion, and the materials of the two sides of the concave portion are made uniform to improve the shielding effect of the inner side wall of the first plate body, compared with the prior art. The different material side surfaces used, the present invention can achieve the purpose of improving the shielding function. [Embodiment] The embodiments of the present invention will be described below by way of specific embodiments. Those skilled in the art will readily appreciate the other advantages and advantages of the present invention. Referring to Figures 2A through 2L, it is a method of fabricating a covering structure for a microelectromechanical device. As shown in Fig. 2A, a first plate body 20' having opposite first and second surfaces 20a, 20b is provided and an initial metal layer 211 is provided on the first and second surfaces 2a, 20b. The initial metal layer is selectively formed on the second surface 2% of the first plate body 20. As shown in FIG. 2B, the initial metal layer 211 on the first and second surfaces 20a, 20b is roughened and thinned by an etching process to form the first metal layer 211 of the first surface 20a to form a metal. The layer, and the initial metal layer 211 of the second surface 20b forms a second metal layer 21b for use as another metal layer.曰111080R02 5 201118033 As shown in FIGS. 2C and 2D, an adhesive layer 22 which is a non-conductor layer is formed on the second metal layer 21b as shown in FIG. 2C; and the first metal layer 21a, first The plate body 20 and the adhesive layer 22 form an opening 200 therethrough as shown in FIG. 2D. As shown in FIG. 2E, a second plate body 23 having opposite third and fourth surfaces 23a, 23b is provided, and the third and fourth surfaces 23a, 23b of the second plate body 23 are selectively provided respectively. Third and fourth metal layers 24a, 24b, and the third metal layer 24a is bonded to the adhesive layer 22 to cover the opening 200 by the second metal plate 23 On one side, the opening 200 is formed with a recess 201 such that the recess 201 has a bottom surface 201a and adjacent side surfaces 201b. The first plate body 20 and the second plate body 23 are made of the same material, for example, BT (Bismaleimide-triazine) core material or plastic. As shown in FIG. 2F, the first conductor layer 25a is formed on the first metal layer 24a and the side surface 201b of the bottom surface 201a of the recess 201 by an electroplating process or a sputtering process, and the fourth metal layer 24b is formed on the fourth metal layer 24b. Forming a second conductor layer 25b, the first conductor layer 25a preferably having a thickness of 10 micrometers or more; and forming a crystal before forming the first and second conductor layers 25a and 25b of copper. A seed layer (not shown), which is mainly used as a current conduction path required for an electric ore metal, and may be composed of a metal, an alloy, and a plurality of deposited metal layers. As shown in FIGS. 2G and 2H, a resist layer 26 is formed on the first conductor layer 25a as shown in FIG. 2G; and the second conductor layer 25b and the fourth metal layer 24b are removed, as shown in FIG. 2H. Show. 6 111080R02 201118033 As shown in FIGS. 21 and 2J, the resist layer 26 is removed as shown in FIG. 21; a surface treatment layer 27 is formed on the first conductor layer 25a, and the material of the surface treatment layer 27 is One of the groups of records, Ιε, gold, tin, and stainless steel is shown in Figure 2J. The present invention forms the recess 201 by combining two sheets of the same material, that is, the first plate 20 and the second plate 23, and also covers the recess with the same material (such as the first conductor layer 25a). 201 to enhance the shielding effect of the inner side wall of the first plate body 20. As shown in Fig. 2K, the second plate body 23, the third metal layer 24a, the bottom surface 201a of the concave portion 201, the first conductor layer 25a, and the surface treatment layer 27 are formed with holes 230. Thus, a cover member 50 for a microelectromechanical device is provided which includes the first plate body 20, the second plate body 23, the adhesive layer 22, and the first conductor layer 25a. The second plate body 23 selectively has a third metal layer 24a provided thereon. The adhesive layer 22 is disposed on the second metal layer 21b to be bonded to the third metal layer 24a on the second board 23 or directly bonded to the second board without the third metal layer 24a. 23 on. As shown in Fig. 2L, in a subsequent process, the invention is applied to a carrier board 28, such as a circuit board, to form a package 60. The package member 60 houses a semiconductor component 29 such as a MEMS wafer 29a or an ASIC (Application Specific Integrated Circuit) wafer 29b disposed on the carrier board 28, thereby forming a microelectromechanical device, for example, a sound exchange. The energy device 70, microphone, pressure sensor, or flux sensor. The first conductor layer 25a 7 111080R02 201118033 of the first surface 20a of the first board 20 is bonded to the carrier board 28 through the conductive bonding layer 30 to achieve grounding and read electromagnetic interference (EMI). The recess 201 correspondingly accommodates the semiconductor component 29; in addition, the carrier 28 also has a through hole corresponding to the hole 230 to transmit a signal. In an embodiment that is a microphone, the aperture 230 forms an acoustic port to allow sound waves to enter. In other embodiments, the apertures 230 form turns to allow pressure waves or other quantifiable quantized bodies to enter. The first and second plates 20 and 23 all use the BT core material, so that the manufacturing method is similar to the method for manufacturing a Ball Grid Array (BGA) substrate. This can be achieved by using the existing technology and equipment. It is easy, reliable and inexpensive to manufacture these components, and mass production techniques can be employed to further reduce costs. In addition, it is easier to adopt designs for different internal and external dimensions without excessive tooling costs on the supply side and the packaging stage. In particular, it is possible to have different recess sizes depending on the 矽 characteristics of the semiconductor element 29 to properly combine the perfect frequency response and the Signal-to-Noise Ratio (SNR). Figure 3 shows the sound transducer 70 forming a microelectromechanical amplifier in the package 60. The sound transducer 70 includes the MEMS wafer 29a and the ASIC wafer 29b. The MEMS wafer 29a is basically composed of a microcomputer inductive detector responsive to a sound stimuli, which is 2% assembled to apply a positive breaking bias to the MEMS wafer 29a for processing the resulting The capacitive variation signal provides a digital signal on the output 〇υτ of the sound transducer 7〇, and the digital signal can then be processed by the micro-U1080R02 8 201118033 controller of the related electronic device. The ASIC chip 29b includes an analog preamplifier circuit 71 designed to interface directly with the MEMS wafer 29a and having a front amplification function for amplifying (and appropriately filtering) the MEMS wafer 29a. The resulting capacitive variation signal; the charge pump 73 is capable of generating an appropriate voltage for applying a bias voltage to the MEMS wafer 29a; an analog digital converter 74, such as a sigma-delta type, for fabricating Receiving a clock signal CK and a differential signal amplified by the preamplifier circuit 71, and converting the differential signal into a digital signal; the reference signal generator circuit 75' is connected to the analog digital converter 74 And is designed to supply the reference signals required for the analog-to-digital conversion; and the driver 76 is designed to be the interface between the analog-to-digital converter 74 and an external system, such as a related electronic device. Controller. In addition, the sound transducer 70 can include a volatile or non-volatile memory 78, which can be externally programmed, for example, to enable the sound transducer depending on different configurations, such as gain configuration. 7〇 use. θ The sound transducer 70 can be used in an electronic device 8 as shown in Fig. 4. The electronic splicing 80 is, for example, a mobile communication device, such as a mobile phone, a personal digital assistant (PDA), a notebook computer, but can also record an audio recording function. Take the device and so on. Alternatively, the electronic device 8G may be a hydrophone that can operate underwater or a hearing aid device. The electronic device 80 includes a microprocessor 81 and an input/output interface 83 connected to the microprocessor 111080R02 9 201118033 81. The input/output interface 83 is provided with, for example, a keyboard and a display. The sound transducer 70 is in communication with the microprocessor 81 via a signal processing block 85 which effects further processing of the digital signal output by the sound transducer 70. In addition, the electronic device 80 can include a speaker (ispeaker) 86 and an internal memory 87 for generating sound on an audio output (not shown). The above embodiments are used to illustrate the present invention. The invention is not limited by the spirit and scope of the invention, and the scope of the present invention is protected by the scope of the invention. 1 is a schematic cross-sectional view of a conventional condenser microphone; 2A to 2L are the covering members used in the microelectromechanical device of the present invention; A schematic cross-sectional view of the method; Figure 3 shows a simplified block diagram of the capacitive sound transducer obtained from the 2L diagram; and Figure 4 shows a simplified block diagram of the electronic device including the sound transducer. Description] 10 First substrate 100 Die 101 Back plate 102 Listening hole] 〇111080R02 201118033
11 導電板體 110 穿孔 12 第二基板 13、13, 導電黏著層 14 半導體晶片 15 傳訊器 20 第一板體 20a 第一表面 20b 第二表面 200 開口 201 凹部 201a 底表面 201b 側表面 21a 第一金屬層 21b 第二金屬層 211 初始金屬層 22 黏著層 23 第二板體 23a 第三表面 23b 第四表面 230 孔洞 24a 第三金屬層 24b 第四金屬層 25a 第一導體層 201118033 25b 第二導體層 26 阻層 27 表面處理層 28 承載板 29 半導體元件 29a MEMS晶片 29b ASIC晶片 30 導電結合層 50 覆蓋構件 60 封裝件 70 聲音換能器 71 前置放大器電路 73 充電果 74 類比數位轉換器 75 參考訊號產生器電路 76 驅動器 78、87 記憶體 80 電子裝置 81 微處理器 83 輸入/輸出介面 85 訊號處理之方塊 86 揚聲器 CK 時脈訊號 12 111080R0211 conductive plate 110 perforation 12 second substrate 13, 13, conductive adhesive layer 14 semiconductor wafer 15 transmitter 20 first plate 20a first surface 20b second surface 200 opening 201 recess 201a bottom surface 201b side surface 21a first metal Layer 21b Second Metal Layer 211 Initial Metal Layer 22 Adhesive Layer 23 Second Plate 23a Third Surface 23b Fourth Surface 230 Hole 24a Third Metal Layer 24b Fourth Metal Layer 25a First Conductor Layer 201118033 25b Second Conductor Layer 26 Resistor layer 27 surface treatment layer 28 carrier plate 29 semiconductor component 29a MEMS wafer 29b ASIC wafer 30 conductive bonding layer 50 covering member 60 package 70 acoustic transducer 71 preamplifier circuit 73 charging fruit 74 analog digital converter 75 reference signal generation Circuitry 76 Driver 78, 87 Memory 80 Electronics 81 Microprocessor 83 Input/Output Interface 85 Signal Processing Block 86 Speaker CK Clock Signal 12 111080R02