201117297 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種半導體裝置之製造裝置及半導體裝置之製 造方法，尤其是關於一種使用只對所期望之位置選擇性地形成 鶴膜的選擇性化學氣相沉積(Chemical Vapor deposition, CVD)法 來製造半導體裝置之裝置及其製造方法。 【先前技術】 在石夕基板半導職置巾’絲元件及被動元件等構成元件係 於被纟巴緣膜包夾的狀態下疊層於基板上。為了要電性連接複數 個構成元件，絕緣膜形成有複數個貫通孔以連結各構成元件。 尤其在基板的主動元件與疊層於基板上的多層配線之間設置有 接觸孔(contact hole)，以電性連接主動元件與多層配線。又，配 f間具有絕緣·?層輯構造係設置有電性連接各層配線的 通孔(viah〇le)。接觸孔及通孔係埋設有翻 =::r:;rr線之間或多層配線二 由於娜間不好的相互 作用(例如寄生效應），並對熱具有較高穩定性 «用作桃線材料。 ⑽鶴已廣泛 法^通⑽制覆蓋性(bianket)化學氣相沉積之方 上形成氮化鈦(_，_配2== 』。紐’麵著層场成喊 2 201117297 性化學氣相沉積法中，由於是在絕緣層之整面形絲薄膜，所 =曰1生在接觸孔或通孔之開口周緣成長鎮膜而使其開口面積 變乍之所謂的懸突現象(overhang)。當發生懸突現象時，由於可 進入於接麻或通狀⑽_餘會受職制，故接觸孔或 通=的埋設作錢料完全。當翻孔麵孔之直徑越小，尤 、疋nm以下時，接觸孔或通孔埋設不良之現象就會變得更 加顯著。又，由於輕性化學氣概積法需要細後的去除步 驟，將導致半導體裝置之製造步驟㈣繁複且製造成本亦隨之 增加。 此，近年來，-種同時可簡化製造步驟及降低製造成本的 選擇性化學氣相沉積法(請參照日本特開平1〇·54號 被提出來，透過此技術，可以只在接觸孔或通孔等部位選擇性 地形成配線材料所構成的薄膜。 作為藉由選擇性化學氣相沉積法來形成鶴之細的方法，已 知有-種«雜室⑽給从似|( 纽以开細薄臈的卿還原法。於卿還原法中早2=) 至供給六氟化鶴氣體及單魏氣體的模式，可分成下列三種·工 (A)同時供給六氟化鎢氣體與單矽烷氣體。 ⑻在供給單魏賴之狀供給六鶴氣體。 (C)在供給六氟倾氣體之前先供給單魏氣體。 於模式㈧下，當_供給六減錢體解魏 膜處理之初細段馳成長將會變得相當得’ ^速率在_雜_嶋，_導_^2 1。又’顯式⑻τ ’雜供給單魏氣體 化鶴氣趙，且使用構成半導體基㈣赠為_^:= 201117297 ==成長，但會在六氟化物立於半導縣板表面的石夕 娜二:而導致半導體基板之表面她。 J，=^(C)下乂係於供給六氟化遂1氣體之前先供給單石夕烧 ^後供=讀在半導縣域面之反舰高的單魏分子與 化鶴氣體中之分子起反應，故可促進鶴之核成 ^存在絕體除了會存在於形成綠線的部位以外也 其他不想職_默部⑽。 板上 望：置一種可使用選擇性化學氣相沉積法在所期 半導33:=成1薄膜的半導體裝置之製造農置及 二導體裝置之k方法’以解決先前技術中所遭遇到之上述問 【發明内容】 裝的第一具體實施例為-種半導體 。1^方法，係對谷置有基板的真空腔室供給讀化 及早魏H體錄行細處理，崎 位上 選擇性地形祕_。 位上 ^製造方法巾’係在進行細處理前，供給單魏氣體於 ^腔室㈣使單魏氣體·於基板之高導電上，之 ^直將^制單魏從真空腔簡出，並且於執行細處理時之 ^腔1的六祕錢體之分壓超解魏氣體之分壓的 式’供給六氟化鶴氣體及單魏氣體至真空腔室内。 201117297 裝置之製造裝發明的第二具體實施例為一種半導體 氣體供认心·真空腔室’其係可容置基板；第-:體其係對真空腔室供給六氣化鶴氣體 真空腔室供給單概體，該製造裝以 == 室供給六氣化鶴氣體與單概體，以於 基板之料紐部位上選雜_成鶴薄膜。 至直述賴處理之則，第二氣體供給部供給單魏氣體 至H至内，以使單魏氣體吸附於基板之高導電性部位 二王tl’再單魏從真空腔室排出’並且於執行成 、处’，H腔室⑽六氟化H氣體之分壓超過單石夕烧氣 體之分壓的方式’供給六氟倾氣體及單魏氣體至真空腔室 【實施方式】 以下，明參照圖1至圖3，透過圖1至圖3說明本發明的半導體 襄置之製造裝置及半導體裝置之製造方法之—具體實施例。 如圖1所示，半導體裝置之製造裝置相鄰設置有—對搬入/搬出 口 11a、lib ’用以導入或取出基板。前處理腔室i2a、i2b係設置 在鄰接於各搬入/搬出口 11a、lib的位置上。前處理腔室i2a、12b 係用以在基板形成鎢薄膜之前，先對基板之表面進行洗淨之前 處理。又，成膜腔室13a、13b係設置在鄰接於前處理腔室i2a、 12b的位置上。成膜腔室13a、丨北係用以執行於基板上形成鎢薄 膜的成膜處理。熱處理腔室14係設置於成膜腔室13a、13b之間。 熱處理腔室14係用以對經過前處理之後的基板施加預定之熱處 理。在半導體裝置之製造裝置中’一對搬入/搬出口 ua、與 五個腔室12a、12b、13a、13b、14可構成環狀，但不以此為限。 201117297 半導體裝置之製造裝置的中央設置有轉移腔室（transfer chamber)15’當基板從二個搬入/搬出口iia、llb及五個腔室12a、 12b、13a、13b、14中之任一者朝下一個步驟移動時，基板將會 所通過轉移腔室15。 在I造半導體裝置時’作為成膜對象的基板將會從搬入/搬出 口 11a、lib被導入至製造裝置内。搬入/搬出口 lla、仙係相對 於被導入的基板而具有相同的功能。以下，將針對從搬入/搬出 口 11a導入基板的情況加以說明。基板上具有主動元件之一面設 置有絕緣膜’而絕緣層設置有形成配線的接觸孔或構成多層配 線的通孔。 當基板被導入於搬入/搬出口 11a之後，將會透過轉移腔室15 搬運至前處理腔室12a。前處理腔室12a係用以從位於設置在絕緣 層的接觸孔底部之基板表面、或是位於通孔之底部的配線表 面’去除掉與大氣中之氧反應而成的氧化物層。於前處理腔室 12a進行前處理之後’基板將會通過轉移腔室15而被搬運至熱處 理腔室14。熱處理腔室η係用以對基板上由於前處理而露出的 底層執行熱處理，以降低鎢薄膜與底層之界面的電阻。經過熱 處理之後’基板將會透過轉移腔室15搬運至成膜腔室13&。成膜 腔室13a係用以形成基板的接觸孔或通孔，並透過選擇性化學氣 相沉積法於基板的高導電性部位選擇性地形成鎢薄膜。 經過上述成膜處理之後，基板將會透過轉移腔室15被搬運至 搬入/搬出口 11 a ’並移出製造裝置外。至於基板從搬入/搬出口 i lb 搬運至製造裝置的情況則與從搬入/搬出口 lla搬入的情況相 同’會依序施行前處理腔室12b之前處理、熱處理腔室Η之熱處 理、以及成膜腔室13b之成膜處理後，從搬入/搬出口 lib移出至 製造裝置外。 201117297 其次，請參照圖2及圖3，圖2及圖3係用以說明成膜腔室na、 之構成、以及於成膜腔室13a、13b所進行的成膜處理。 =圖2所示，成膜腔室13a、13b包含真空槽21，並且真空槽21 U有基板s的基滅物台22以及供給補氣體(六氣化 鶴⑽6)氣體及單矽烧氣體)的原料氣體埠p卜在原&氣體 埠P1下方設置有淋浴頭23 ’肢將频氣料P1所供 均勻地擴散於真空槽21内。 典原料氣體埠P1連結—配管，該配管係分歧成單魏氣體用配 管及六氟化鎢氣體用配管。單矽烷氣體用配管及六氟化鎢氣體 用配管係分別設置有調整氣體流量的流量控制部^^、 MFC3 ϋ控制部、嫌C3_以控織膜處理及潔淨處 理中之氣_流量。上賴潔淨處理储由潔淨氣體之I氣來 去除由於成膜處理而附著於真空槽21内之槽壁或基板載物台22 等構件的鱗薄膜。 用以將惰性軋體之氬(Ar)氣體導入至單石夕烧氣體用配管内的 惰性氣體用配管’係從比私^氣_配管之流量控制部顧^ 還靠近下游湖始分歧。又，用以將惰性氣體之氬氣導入於六 II化嫣氣體舰管⑽惰性氣翻配管，係從比六i化鶴氣體 用配管之流量控制部MFC3翁近下_開始分歧。上述的各惰 性氣體用配管分別設置有流量控制部MFC2、MFC4，以調整氬 氣之流i。流量控制部MFC2、MFC4係用以控制成膜處理及潔 淨處理中之惰性氣體的流量。 於此實施例中’第2惰性氣體供給部係由流量控制部mfc〕及 與其連接的惰性氣體用配管所構成；第丨惰性氣體供給部係由流 量控制部MFC4及與其連接的惰性氣體用配管所構成；單矽烷氣 體供給部係由單矽烷氣體用配管與流量控制部]^(：1所構成；第 201117297 二氣體供f部係由單魏《供給部料2惰減體供給部所 構成’·六氣偏|氣體供給部制讀化鋪_配#與流量控 制部MFC3所構成；第—氣體供給部係由六氟化鎢氣體供給部盘 第1惰性氣體供給部所構成。 、 基板載物台22連接高頻電源24，並且高頻電源24係用以於真 ^槽21内施加高頻電場，致使被導人於真空槽21内的氣體受到 ^頻電場而電漿化。真空設置有肋導人潔淨氣體的潔淨 孤體埠P2。真空槽21係用以交互地重複進行使㈣料氣體的成 膜處理與料處理。料氣鱗P2連結潔淨氣航管，並且潔 淨氣體配管_以將潔淨氣體之錄2)氣麟雜氣體之氯氣 同時地供給至真空槽2卜又，潔淨氣體配管設置有流量控制部 MFC5。 真空槽21係透過排氣蟑P3連結渦輪栗(turb〇pump)25。當渴輪 ，25驅動時’真级21之内壓就會被賴至適於成膜處理或潔 淨處理的壓力。真空船、各織體所流通的配管類及基板載 物台22分職置有溫調機構，肋將真空槽21之内壁、配管類 及基板S之溫度維持於預定溫度下。 當基板s經過前處理腔室12a、既之前處理與熱處理腔室14之 熱處理之後，基板S將會被搬運至成膜腔室13&、13b内。然後， 於基板S被載於成膜腔室13a、13b内之基板載物台22的狀態下， 基板S將會藉由設置於基板載物台22的溫調機構加熱至預定溫 度。之後，六氟化鎢氣體及單矽烷氣體從淋浴頭23均勻地擴散 而供給於真空槽21内。下列反應式所示的六氟化鶴之單雜的 還原反應，係在基板S的高導電性部位上進行，亦即選擇性化學 氣相沉積法之成膜。 • 2WP6+3SiH4—2W+3SiF4+3H2，或 201117297 • WF6+2SiH4->W+2SiF3+3H2 需說明的疋’上述基板S之高導電性部位係隨著選擇性化學氣 相沉積法的製造步驟不同而異。舉例而言，當選擇性化學^相 沉積法^形成接觸孔配線時，基板表面係由具有接觸=的絕 緣膜所覆蓋，並且形成於基板表面的M〇s電晶體等之雜質擴散 區域從細孔露a作為絲元件。在輯況下，基板s的高導電 性部位係位於接觸孔之底部的雜質擴散區域，故鎢薄膜係選擇 性地形成於該部位。 '、 另-種情形則是，當選擇性化學氣相沉積法用以形成通孔配 線時，基板表面係由具有通孔的絕緣膜所覆蓋，並且下層配線 的-部分從通孔露出。在此情況下，基板s的高導電性部位係位 於通孔之底部的配線m薄膜顧雜地形成於該部位。 々虽對複數個基板s執行上述細處理時，就可從潔淨氣體用配 管供給氣氣與氬氣於真空槽21，魅高頻電源24會在真空槽21 内產生高頻電場喊行料處理。鱗，瞒於真空槽21之内 壁的鶴薄膜會與使用氟氣的電聚起反應，且生成六氟化鶴、三 氟魏(SiHF3)、四氟魏(SiF4)或氟化氫㈣等的氣化物。然後， 所生成的氟化物會與氬氣一同排出至真空槽21外。 二而透過選擇性化學㈣目沉積法進行成膜處理時，對成膜 腔室1如、13b供給六氟化錢體及單魏氣體賴式，可分 列三種： (A) 同時供給六氟化鶴氣體與單矽烷氣體。 (B) 供給單魏氣體之前先供給六氣體。 (C) 供給六氟化鎢氣體之前先供給單矽烷氣體。 在模式⑷讀況下’⑽產生成贼狀初繼段的核成 且鶴之成膜速度會受到限制。在模式⑼之情況下 ，在比單 201117297 石夕烧氣體還先行供給的六氟化_位於基板表面㈣之間，會 進行以下的反應，雖然鑛_的縣速度可觀改善，但基 板表面卻會受到侵蝕。 • 2WF6+3Si-^2W+3SiF4 在模式(C)之情況下，於供給六氟化鶴氣體之前，先供給單石夕 烧氣體時，吸附於基板表_單魏分子會與之後被供給的六 氟化鶴氣财之分子反應。因此，成__叙成長速度可 獲得改善。細’由於單魏氣體除了會職於接觸孔或通孔 以外’也可能存在於絕緣膜表面上的接觸孔或通孔之周邊。因 此，即使在與所期望之部位不同的其他部位單石夕烧與六氣化鶴 也會起反應，而有形成鎢薄膜之虞。 产於此實_巾’係如模式(Q所示’在細處理職行單魏 氣體之供給處理，並且在單魏氣體之供給處理之後，執行將 存f於成膜腔室13a、13b狀剩餘的單魏、特在於與形成有 鎮薄膜之雜不_其他雜之單魏從成酿室以仙 以去除的排氣處理。 以了，係參照圖3及圖4說明在成膜腔室133、13b所執行的單 石夕燒氣體供給處理、排氣處理及賴處理的執行時序、以 等的處理條件。 、 圖3^顯不在成膜腔室丨如、13b所執行的單發院氣體供給處理 時、排氣處理時及成膜處理時的各種氣體之供給期間。其中， 圖3⑻’3(eH系分別顯示單石夕烧氣體(腿4)、供給至單魏氣體 用配管的(Ar)氣體、六貌化嫣氣體(Wp6)、供 物概崖_讀賴^= 氧體之分壓。 如圖3所示，在時郭至時序t2之期間，在真空槽以内從單石夕 12 201117297 烧氣π己管供給單石夕燒氣體、以及從六氟化鶴氣體用配管供 給氬氣。單石夕烧氣體係吸附於基板s上之導電性較高的部位，並 且也存在於其他躲。在單魏氣舰給處对，可將單石夕烧 氣體之,量奴於5.9xl〇3Pam3/s(版em)、將氬氣之流量設定於 ll.8xl03Pam3/s(2〇sccm)以及將真空槽μ之内壓設定於⑽化，並 維持15秒，但不以此為限。 >之後，在時序t2至時序t3之期間，從單石夕烧氣體用配管供給氬 氣，並且也從六t/iui氣體舰f接著供給氬氣。如此藉由在 真空槽21内供給氬氣’ g卩可去除細孔或通孔中之無益於鶴薄 膜形成之麵_。在魏處理巾，可將單魏氣體用配管及 六3氟，鎢氣體用配管的氬氣之流量設定於8.9 X 10Pam/s(15sccm)、將真空槽21之内壓設定於〇4pa，並維持1 秒，但不以此為限。 之後，在_3至時相之期間，將單魏氣體與六氟化鶴氣 體供給至真雜21内。藉此’開錢行賴處理崎基板之接 觸孔或通孔選擇性地形成鶴薄膜。在成膜處理的過程中，可以 二邊將六氣化魏體之流量轉純.議3pam3/s(2Qs_)、將 草石夕烧氣體之流量維持於5.9xl〇3Pam3/s(1〇sccm)、以及將真空槽 j内壓維持於a4pa’一邊以成膜腔室13a、13b内的六氟化鎢 壓變得比單魏氣體之分壓還高的方式，將六氣化嫣 亂體及早魏氣體供給至真空槽21内，但不以此為限。 核發日狀，係在日_至時序仅_以上述條件執行單石夕 ^體供給處理與在時序t2至時序t3之期間的排氣處理時，確切 到鶴缚膜卿nm/分之顧速度選擇性地形成。_，只要適合 地選擇成断間，就可選擇性地獲得所慰厚度_薄膜。田 此種的-系列處理，由於抑制以三氣石夕院(獅3)、氣石夕酸 13 201117297 卿㈣等所謂SiHxFy之化學式所表示的鎢以外之反應生成物或 對氣體成分之各種構件的吸附，所以可藉由溫職構來分別加 齡空及崎，則f衫之魄或供給各種氣體的配 官之溫度維持在8(rc。又，可分縣由溫賴構來加熱基板載 。勿口 22以將被載置於基板載物台22的基板s之溫度維持在Μ。 其次，參關4說日滕由細處理麵執行的單魏氣體供給 处理、以及觸鮮魏鋪職㈣氣處理所麟的效果。 圖4係顯示單魏氣體供給時間與排氣處理之有益帶給成膜 處理時之選擇性的影響。圖4係由左綱始依序分麵示「沒有 氣體供給處理」、「沒有對私絲體進行供給/排氣 處:瑪*」、「沒有料魏氣财行供給/職處理泌鐘」、「有 烧，進行供給/排氣處理5秒鐘」以及「有對單魏氣體 订…給/排氣處理15秒鐘」之各條件下的選擇性之裂痕的產生 十Α ^擇性之做細轉—#綱麵之晶®所存在的晶核尺 寸為80nm以上的鎢之晶核個數。 如，4所示，在成膜處理前不進行單石夕烧氣體之供給時，選擇 之裂痕為10個以上且未滿1〇〇個。又，在成膜 =體處理'秒鐘時:選擇性之裂痕為麵個以上厶二_ 又’在成膜處理前執行單石夕燒氣體處理5秒鐘時，選擇性之 ;痕為10_似上且未制__。婦概，在為了去 單魏而_謎職城行單魏氣體供 ，、選擇性之裂痕為10個以上且未滿_固。又， 且在之 性之料錢娜咖5祕時，選擇 如此’只要在成膜處理前執行單石夕烧氣體供給處理， 14 201117297 後執行排氣處理’即可將選擇性之裂痕 絲體之供給處理時相同的程度。又’在單石夕^二=：：石夕 =件為_時’例如，藉由實施單魏氣體 單石夕烧亂體供給處理之後進行排氣處理，即可 μ，’ 痕抑制在1/1000左右。 字、擇性之裂 依據本實施例，可獲得下列功效： ⑴藉由在《處理錄行單魏氣體供給處理 ，氣處理，即可使吸附於細之導電性較高的部位之仃 ”成膜處辦所供給的六氟化鎢氣體起 = ^及成膜處心，未吸_基板s之導較 會從成膜腔室13a、13b内進行排氣。，與未執 二可Γ存在於不該當於導電性較高的部位之絕緣層 成在基板8上，只有在導電性較高的部位可形 成鶴涛膜’而可抑鑛謂賴處理時的轉 :=顧構成的薄膜，選擇性佳地形成於所期望= 果，係在真空腔室㈣六氟喊氣體之分壓 分壓的條件1Γ實施細處辦，更為顯著。 )在子早夕烷軋體進行排氣的排氣處 用配管分別供給氬氣。藉：^ 而而提高單石夕燒氣體的排氣效果。因 排氣==剩餘的單魏氣體進行排氣，所以可縮短 時間。又，可充分地確_於魏處理的氬氣 2)即使在魏於枝化錢伽配料 結於早魏氣體用配管的氬氣供給部中之任—方‘不乂= 15 201117297 可從正常的氬氣供給部供給氬氣。因此，可提供一種可 以及可靠度高的半導體裝置之製造裝置。 W在早魏氣體供給處理時，在真空 氣體與惰性氣體。此時，在不使 J供、，，°早石夕坑 下，會有單#⑽、^ 5 體舰管的狀態 氟傾氣翻配料之虞。因此， 魏氣體、域雜六氟傾氣體用配管内 反應，而使反應生成物吸附於六咖氣體 配其果’在成膜處理時，會有從六氟化鶴氣體用 酉己以時將六減職體與反應生成物—同供給至真空· 良率’導致半導體裝置的 2 ’若傾本發明，财私絲舰給處理時，從單石夕 二=配官ί給單魏氣體的同時’可從六氣化鶴氣體用配 ===猎此’就可抑制單石夕烧氣體逆流至六氟化鶴氣體 。因而，可迴避六敦化鹤氣體與單石夕烧氣體之反岸，且 可抑制起·該反魅而降低半導體裝置之良率。〜 (5)在成膜處理時，六氟蝴可依單魏而還原， ::，薄膜。然而’在六_體與單魏氣體之;^ 卿F )等H以夕卜與也包含有三氟石夕烧(獅3)或氟石夕酸 —2 6βη 1 xFy之化學式麵的化合物。此種的化合物，係 附者於單石夕炫氣體用配管或六氟化鎢氣體用配管及真空槽歡 ，’诚膜處理中會有從配管或真空之内壁脫離“。 :後，經脫離的物質會附著於基板s的絕緣膜上等之並未形成有 ^膜^位，且因與讀域進行還原反應，而 形成之虞。 m 此點，依據本發明，則藉由將六氟化鶴氣體用配管、單魏 16 201117297 氣體用配管、潔淨氣體用配管之溫度及真空槽21之内壁的溫产 維持在m：，即可抑制起因於溫度較低而使六氟化‘體= 矽烷氣體之反應性生物的SiHxFy附著於上述各配管或真空槽之 内壁。又，也可抑制起因於溫度較高而發生SiHxFy之熱成 物。另外，配管或真空槽21之内壁的溫度，係設定於6〇。〇以上 且150°C以下之範圍’較佳為設定於80¾左右。 於實際應用中，亦可變更上述的各實施例如下： •亦可於每次對-片基板S進行成膜處理時，均執行潔淨處 理。 •除了氟氣以外，亦可使用六氟切娜）、三氟化氮 氣體、三氟化氣(C1F3)作為潔淨氣體。 :除了氬氣以外，亦可使用氮⑽)氣體或氦㈣氣體， =:::=真空崎雜氣體、以及與料氣體同時 =及於鑛處理、單魏氣體供給處觀聽處理， 吻爾溫度，只綱於机以上 ·=排氣處理時’雖已從與六氟化鶴氣體用 與:單魏氣體用配管連結的氯氣用配二 氣，也可麟^H。傾氣咖崎喊制配管供給氬 及與氣翻配管連結的惰性氣體用配管以 (5)的效果。配速，的惰性氣體用配管，亦可獲得(1)至 •雖然轉體打之製造《置相包含有二個-_搬入/搬 17 201117297 出口lla、lib、前處理腔室12a、12b以及成膜腔室13a、13b，但 亦可包含各一個搬入/搬出口、前處理腔室及成膜腔室。甚至亦 可任意地設定各種腔室及搬入/搬出口的數量。 •半導體裝置之製造裝置，除了成膜腔室以外，雖然已包含 前處理腔室、熱處理腔室以及轉移腔室，但是也可只包含搬入/ 搬出口以及成膜腔室’也可在成膜腔室設置搬入/搬出口。即使 在該情況’也可獲得(1)至(5)的效果。 【圖式簡單說明】 圖1係顯示本發明一實施形態的半導體裝置之製造裝置的上 視圖。 圖2係顯示成膜腔室的部分剖視圖。 圖3係顯不對成膜腔室供給氣體的時序之時序圖，其中圖 3(a)、圖3(b)、圖3(e)、gj3(d)、圖3(e)係分別顯示單魏氣體 (SH4)供、”σ至單；g夕烧氣體用配管的⑽氣體、六氣化鶴氣體 (WF6：) H氟化鵠用配管的氬氣之供給綱以及成膜腔室 内的六氟化錢體及單錢氣體之分壓。 理進仃成骐處理前所先執行之單雜氣體供給處 理及剩餘單魏之魏處理之效果的圖表。 【主要元件符號說明】 lla、lib :搬入/搬出〇 13a、13b :成膜腔室 15 :轉移腔室 22 ·基板載物台 12a、12b :前處理腔室 14 :熱處理腔室 21 :真空槽 23 :淋浴頭 18 201117297 24 .南頻電源 MFC1〜MFC5 :流量控制部 P2 :潔淨氣體埠 S :基板BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device manufacturing apparatus and a semiconductor device manufacturing method, and more particularly to a selectivity for selectively forming a crane film only for a desired position. A device for manufacturing a semiconductor device by a chemical vapor deposition (CVD) method and a method of manufacturing the same. [Prior Art] The constituent elements such as the stone element and the passive element of the Shishi substrate semi-conductive sheet are laminated on the substrate in a state of being sandwiched by the film. In order to electrically connect a plurality of constituent elements, the insulating film is formed with a plurality of through holes to connect the respective constituent elements. In particular, a contact hole is provided between the active element of the substrate and the multilayer wiring laminated on the substrate to electrically connect the active element and the multilayer wiring. Further, the insulating layer is provided with a via structure, and a via hole for electrically connecting the wirings of the respective layers is provided. The contact hole and the through hole are buried with the turn-over:::r:; rr line or the multilayer wiring 2 due to poor interaction between the nucleus (such as parasitic effect), and has high stability to heat «used as a peach line material. (10) The crane has formed a titanium nitride (_, _ with 2 == 』 on the square of the chemical vapor deposition of the bianket (10). The nucleus of the surface layer is shouted 2 201117297 chemical vapor deposition In the method, since the film is a full-faced silk film in the insulating layer, the so-called overhang phenomenon in which the opening area of the contact hole or the opening of the through hole is grown and the opening area is changed. When the overhang occurs, it can be used because it can enter the hemp or the shape of the joint (10) _, so the contact hole or the pass = the buried material is completely used. When the diameter of the turned face is smaller, especially below 疋nm At the same time, the phenomenon that the contact hole or the via hole is buried poorly becomes more conspicuous. Moreover, since the light chemical gas accumulation method requires a fine removal step, the manufacturing steps (4) of the semiconductor device are complicated and the manufacturing cost is also increased. Therefore, in recent years, a selective chemical vapor deposition method which simultaneously simplifies the manufacturing steps and reduces the manufacturing cost (refer to Japanese Patent Laid-Open No. Hei 54), through which the technique can be used only in contact holes or Selective formation of wiring material, such as through holes As a method for forming a fine structure of a crane by selective chemical vapor deposition, it is known that a kind of "complex chamber (10) is given to a similar method. In the middle of the law, 2=) to the mode of supplying the hexafluoride gas and the single-wei gas, it can be divided into the following three types: (A) simultaneously supplying tungsten hexafluoride gas and mono-decane gas. (8) Supplying a single Wei Lai Six crane gas. (C) Supply the Weiwei gas before supplying the hexafluoride gas. Under the mode (8), when the _supply six-cutting body is dissolved, the fine-grained growth will become quite good. The rate is in _ _ _ 嶋, _ _ ^ 2 1. Also 'explicit (8) τ 'mixed supply of Wei Wei gasification Heqi Zhao, and the use of the composition of the semiconductor base (four) gifted _^: = 201117297 == growth, but will be The hexafluoride stands on the surface of the semi-conductor plate, Shi Xi Na II: and causes the surface of the semiconductor substrate to be her. J, =^(C) The lower 乂 is supplied to the single stone 烧 烧 before supplying the SF6 gas. After the supply = reading the anti-ship high in the semi-conductor county, the single Wei molecule reacts with the molecules in the chemical crane gas, so it can promote the existence of the crane. It will exist outside the part where the green line is formed, and the other does not want to work. _Min Department (10). On-Board: A manufacturer of semiconductor devices that can use a selective chemical vapor deposition method to perform semiconductor semiconductors at a period of 33:=1. The method of the present invention is to solve the above-mentioned problems encountered in the prior art. The first embodiment of the invention is a semiconductor. The method is a vacuum chamber in which a substrate is placed on a valley. Supply reading and early Wei H body recording line fine processing, selective topographical secrets on the position of the position. The position of the manufacturing method towel is supplied to the chamber (4) to make the Weiwei gas before the fine treatment. On the high-conductivity of the substrate, the straight-through will be simplified from the vacuum chamber, and the partial pressure of the six-cell body of the cavity 1 when performing the fine processing is the formula of the partial pressure of the Wei gas. Fluorinated crane gas and single Wei gas into the vacuum chamber. 201117297 Manufacture of the device The second embodiment of the invention is a semiconductor gas supply plenum vacuum chamber 'which can accommodate a substrate; the first: body supplies a vacuum chamber with a six gasification crane gas vacuum chamber supply In the single assembly, the manufacturing device is provided with a gasification gas and a monolithic body in a == chamber to select a heterogeneous film on the substrate of the substrate. To the direct processing, the second gas supply unit supplies the Weiwei gas to H to the inside, so that the single Wei gas is adsorbed on the highly conductive portion of the substrate, and the second gas is discharged from the vacuum chamber. Execution, the 'H chamber (10) hexafluoride H gas partial pressure exceeds the partial pressure of the single stone gas burning gas 'supply hexafluoride gas and single Wei gas to the vacuum chamber [embodiment] A specific embodiment of a manufacturing apparatus of a semiconductor device and a method of manufacturing a semiconductor device of the present invention will be described with reference to Figs. 1 to 3 through Figs. As shown in Fig. 1, the manufacturing apparatus of the semiconductor device is provided with a pair of loading/unloading ports 11a and lib' for introducing or taking out substrates. The pre-processing chambers i2a and i2b are provided adjacent to the respective loading/unloading ports 11a and 11b. The pretreatment chambers i2a, 12b are used to clean the surface of the substrate before the substrate is formed into a tungsten film. Further, the film forming chambers 13a and 13b are provided adjacent to the pretreatment chambers i2a and 12b. The film forming chambers 13a and 丨 are used to perform a film forming process for forming a tungsten film on a substrate. The heat treatment chamber 14 is disposed between the film forming chambers 13a, 13b. The heat treatment chamber 14 is for applying a predetermined heat treatment to the substrate after the pretreatment. In the manufacturing apparatus of the semiconductor device, the pair of loading/unloading ports ua and the five chambers 12a, 12b, 13a, 13b, and 14 may be formed in a ring shape, but not limited thereto. 201117297 The center of the manufacturing apparatus of the semiconductor device is provided with a transfer chamber 15' when the substrate is moved from the two loading/unloading ports iia, llb and five chambers 12a, 12b, 13a, 13b, 14 As the next step moves, the substrate will pass through the transfer chamber 15. When a semiconductor device is fabricated, the substrate to be film-formed is introduced into the manufacturing apparatus from the loading/unloading ports 11a and 11b. The loading/unloading lla and sensation have the same function with respect to the substrate to be introduced. Hereinafter, a case where the substrate is introduced from the loading/unloading port 11a will be described. An insulating film is disposed on one surface of the substrate with the active element, and the insulating layer is provided with a contact hole for forming a wiring or a through hole constituting the multilayer wiring. After the substrate is introduced into the loading/unloading port 11a, it is transported to the pretreatment chamber 12a through the transfer chamber 15. The pretreatment chamber 12a is for removing an oxide layer which reacts with oxygen in the atmosphere from the surface of the substrate provided at the bottom of the contact hole of the insulating layer or the wiring surface at the bottom of the through hole. After the pretreatment chamber 12a is pretreated, the substrate will be transported to the heat treatment chamber 14 through the transfer chamber 15. The heat treatment chamber η is used to perform heat treatment on the underlayer exposed on the substrate by the pretreatment to reduce the electrical resistance of the interface between the tungsten thin film and the underlayer. After the heat treatment, the substrate will be transported through the transfer chamber 15 to the film forming chamber 13 & The film forming chamber 13a is for forming a contact hole or a through hole of the substrate, and selectively forms a tungsten thin film on the highly conductive portion of the substrate by selective chemical vapor deposition. After the film forming process described above, the substrate is transported to the carry-in/out port 11 a ' through the transfer chamber 15 and removed from the manufacturing apparatus. When the substrate is transported from the loading/unloading port i lb to the manufacturing apparatus, the same as in the case of loading from the loading/unloading port 11a, the pretreatment of the pretreatment chamber 12b, the heat treatment of the heat treatment chamber, and the film formation are sequentially performed. After the film formation process of the chamber 13b, it is removed from the loading/unloading port lib to the outside of the manufacturing apparatus. 201117297 Next, please refer to FIG. 2 and FIG. 3. FIG. 2 and FIG. 3 are for explaining the formation of the film forming chamber na, and the film forming process performed in the film forming chambers 13a and 13b. = shown in Fig. 2, the film forming chambers 13a, 13b include a vacuum chamber 21, and the vacuum chamber 21 U has a base stage 22 of the substrate s and a supply gas (six gasification crane (10) 6) gas and a single gas burning gas) The raw material gas 设置p is disposed under the original & gas 埠P1 with a shower head 23'. The limb is uniformly diffused into the vacuum chamber 21 by the tempering material P1. The raw material gas 埠P1 is connected to a pipe, and the pipe is divided into a single Wei gas pipe and a tungsten hexafluoride gas pipe. The piping for the monodecane gas and the piping system for the tungsten hexafluoride gas are respectively provided with a flow rate control unit for adjusting the gas flow rate, a MFC3 control unit, and a gas flow rate for the control of the woven film and the cleaning process. The squamous film of the member such as the groove wall or the substrate stage 22 adhered to the vacuum chamber 21 due to the film formation process is removed by the clean processing of the I gas from the clean gas. The piping for inert gas used to introduce the argon (Ar) gas of the inert rolled body into the single-stone gas-fired piping is branched from the flow control unit of the private gas pipe to the downstream lake. Further, the argon gas for introducing the inert gas into the inert gas distribution pipe of the hexafluoride gas vessel (10) is different from the flow rate control unit MFC3 of the piping for the gas generator of the hexa. The respective inert gas pipes are provided with flow rate control units MFC2 and MFC4, respectively, to adjust the flow i of the argon gas. The flow rate control units MFC2 and MFC4 are for controlling the flow rate of the inert gas in the film forming process and the cleaning process. In this embodiment, the second inert gas supply unit is composed of a flow rate control unit mfc and an inert gas pipe connected thereto, and the second inert gas supply unit is a flow rate control unit MFC4 and an inert gas pipe connected thereto. The monodecane gas supply unit is composed of a monodecane gas pipe and a flow rate control unit, and is composed of a gas supply unit, and the gas supply f unit is composed of a single-wei supply unit 2 inertial reduction body supply unit. The gas supply unit is composed of a flow rate control unit MFC3, and the first gas supply unit is composed of a tungsten hexafluoride gas supply unit disk first inert gas supply unit. The stage 22 is connected to the high-frequency power source 24, and the high-frequency power source 24 is used to apply a high-frequency electric field in the cavity 21, so that the gas guided in the vacuum chamber 21 is plasma-charged by the electric field. A clean orphan body P2 with a rib-guided clean gas is provided. The vacuum chamber 21 is used to alternately perform the film forming treatment and material processing of the (four) material gas. The material gas scale P2 is connected to the clean gas air tube, and the clean gas pipe is provided. _ to record the clean gas 2) The chlorine gas of the gas lining gas is simultaneously supplied to the vacuum tank 2, and the clean gas pipe is provided with the flow rate control unit MFC5. The vacuum chamber 21 is connected to a turbo pump 25 through an exhaust port P3. When the thirsty wheel, 25 drive, the internal pressure of the true level 21 will be relied on the pressure suitable for film formation or cleaning treatment. The vacuum boat, the piping through which the respective bodies are distributed, and the substrate stage 22 are provided with a temperature adjustment mechanism, and the ribs maintain the temperature of the inner wall of the vacuum chamber 21, the piping, and the substrate S at a predetermined temperature. After the substrate s passes through the pretreatment chamber 12a, after the heat treatment of the previous processing and heat treatment chamber 14, the substrate S will be carried into the film forming chambers 13 & 13b. Then, in a state where the substrate S is placed on the substrate stage 22 in the film forming chambers 13a, 13b, the substrate S is heated to a predetermined temperature by a temperature adjusting mechanism provided on the substrate stage 22. Thereafter, the tungsten hexafluoride gas and the monodecane gas are uniformly diffused from the shower head 23 and supplied into the vacuum chamber 21. The single-purity reduction reaction of the hexafluorene crane shown in the following reaction formula is carried out on the highly conductive portion of the substrate S, that is, the film formation by the selective chemical vapor deposition method. • 2WP6+3SiH4—2W+3SiF4+3H2, or 201117297 • WF6+2SiH4->W+2SiF3+3H2 需'The high conductivity of the above substrate S is manufactured by selective chemical vapor deposition The steps vary. For example, when a selective chemical vapor deposition method is used to form a contact hole wiring, the surface of the substrate is covered by an insulating film having a contact =, and an impurity diffusion region of an M〇s transistor or the like formed on the surface of the substrate is fine. Kong Lu a as a wire element. In the case where the highly conductive portion of the substrate s is located in the impurity diffusion region at the bottom of the contact hole, the tungsten thin film is selectively formed at the portion. In the other case, when the selective chemical vapor deposition method is used to form the via wiring, the surface of the substrate is covered by the insulating film having the via holes, and the portion of the lower wiring is exposed from the via holes. In this case, the wiring m of the high-conductivity portion of the substrate s at the bottom of the through-hole is unambiguously formed at the portion. When the above-described fine processing is performed on a plurality of substrates s, the gas and argon gas can be supplied from the clean gas piping to the vacuum chamber 21, and the high-frequency power source 24 generates a high-frequency electric field shouting treatment in the vacuum chamber 21. . The scales and the film of the crucible on the inner wall of the vacuum chamber 21 react with the electricity using fluorine gas to form a vaporized product of hexafluoride, trifluoro-Wei (SiHF3), tetrafluoro-Wei (SiF4) or hydrogen fluoride (IV). . Then, the generated fluoride is discharged to the outside of the vacuum chamber 21 together with the argon gas. 2. When the film formation process is carried out by the selective chemical (four) mesh deposition method, the hexafluoride and the monowei gas Lai can be supplied to the film forming chambers 1 and 13b, and three types can be classified: (A) hexafluoride is simultaneously supplied. Chemical crane gas and monodecane gas. (B) Supply six gases before supplying the Wei gas. (C) The monodecane gas is supplied before the supply of the tungsten hexafluoride gas. Under the mode (4) reading, '(10) produces a nucleus-like initial segment and the filming speed of the crane is limited. In the case of mode (9), the hexafluoride _ located on the surface (4) of the substrate, which is supplied earlier than the single 201117297 gas, will perform the following reaction. Although the speed of the county is improved, the surface of the substrate will be Being eroded. • 2WF6+3Si-^2W+3SiF4 In the case of mode (C), before the supply of the hexafluoride gas, the gas is adsorbed on the substrate, and the single-wei molecule is supplied later. The molecular reaction of hexafluoride. Therefore, the speed of growth can be improved. The thinness "may be present in the vicinity of the contact hole or the via hole on the surface of the insulating film due to the fact that the single Wei gas acts in addition to the contact hole or the via hole." Therefore, even in the other parts different from the desired part, the single stone and the six gasified crane will react, and there is a flaw in the formation of the tungsten film. The production is based on the mode (Q shows 'in the processing of the fine processing of the single-wei gas supply, and after the supply treatment of the single Wei gas, the execution will be stored in the film forming chambers 13a, 13b The remaining single Wei is specially treated with the exhaust gas formed by the formation of the film of the town, and the exhaust gas is removed from the brewing chamber. The film forming chamber 133 is described with reference to FIGS. 3 and 4 . The execution timing of the single-stone gas supply processing, the exhaust gas treatment, and the processing performed by 13b, and the processing conditions of the processing, etc., Fig. 3 is a single-institution gas supply that is not performed in the film forming chamber, for example, 13b. In the processing, the exhaust gas treatment, and the supply period of the various gases during the film formation process, Fig. 3 (8) '3 (eH shows the single stone gas (leg 4) and the supply to the single Wei gas pipe (Ar) Gas, six-figure gas (Wp6), supply cliff _ read 赖 ^ = partial pressure of oxygen. As shown in Figure 3, during the period from time Guo to t2, within the vacuum tank from the single stone eve 12 201117297 The gas-fired π-pipe supplies the single-stone gas and the argon gas from the hexafluoride gas gas piping. The stagnation gas system is adsorbed on the highly conductive part of the substrate s, and also exists in other hiding. In the single Wei gas ship, the gas can be burned in a single stone, and the slave is 5.9xl 〇 3Pam3/ s (version em), the flow rate of argon gas is set to ll.8xl03Pam3/s (2〇sccm), and the internal pressure of vacuum chamber μ is set to (10), and is maintained for 15 seconds, but not limited thereto. Thereafter, during the period from the time t2 to the time t3, argon gas is supplied from the single-stone gas-fired piping, and argon gas is also supplied from the six-t/iui gas ship f. Thus, by supplying argon gas in the vacuum tank 21'卩 卩 卩 。 。 。 。 。 。 。 。 。 。 。 。 魏 魏 魏 魏 魏 魏 魏 魏 魏 魏 魏 魏 魏 魏 魏 魏 魏 魏 魏 魏 魏 魏 魏 魏 魏 魏 魏 魏 魏 魏 魏 魏 魏 魏 魏 魏 魏 魏 魏 魏 魏/s (15 sccm), the internal pressure of the vacuum chamber 21 is set to 〇4pa, and is maintained for 1 second, but not limited thereto. Thereafter, during the period from _3 to the phase, the Weiwei gas and the hexafluoride crane are The gas is supplied to the true miscellaneous 21. By this, the contact hole or the through hole of the sacrificial substrate is selectively formed to selectively form a crane film. The flow of the six gasified Wei body can be turned to pure on the two sides. The 3pam3/s (2Qs_) is maintained, the flow rate of the grass stone is maintained at 5.9xl〇3Pam3/s (1〇sccm), and the vacuum chamber j is pressed. While maintaining the pressure of the hexafluoride hexafluoride in the film forming chambers 13a and 13b to be higher than the partial pressure of the monofilament gas, the gas is supplied to the vacuum chamber 21 while maintaining the a4pa' side. However, it is not limited to this. The issuance of the sun-like shape is performed on the day_to-time sequence only when the single-stone supply processing is performed under the above conditions and the exhaust processing is performed during the timing t2 to the time t3. Membrane nm/min is formed selectively. _, as long as it is suitably selected as a break, the thickness _ film can be selectively obtained. In the case of the series-type treatment, the reaction product other than tungsten or the various components of the gas component represented by the chemical formula of the so-called SiHxFy, such as the three gas stone garden (Lion 3) and the gas stone, 13 201117297 (4) The adsorption, so the temperature can be used to add age and the difference between the two, then the temperature of the sputum or the supply of various gases is maintained at 8 (rc. In addition, the county can be heated by the temperature to build the substrate The port 22 is maintained at the temperature of the substrate s to be placed on the substrate stage 22. Next, the reference 4 says that the single-wei gas supply treatment performed by the fine-treated surface and the touch-up Weipu Figure 4 shows the effect of the favorable supply time of the gas and the beneficial treatment of the exhaust gas treatment on the selectivity of the film formation process. Figure 4 shows the sequence of the left-handed system. "Gas supply processing", "There is no supply/exhaustion of the private silk body: Ma*", "There is no supply of Weiqi Caixing supply/service processing bell", "There is no burning, supply/exhaustion treatment for 5 seconds" and "There is a single Wei gas supply...supply/exhaust treatment for 15 seconds" under various conditions Selective cracks are produced by the Α Α 择 择 择 择 择 择 择 择 择 择 择 择 择 择 择 # # # # # # # # # # # # # # # # # # # # # # # # # # # # # # # When the supply of the single stone gas is not supplied, the crack is selected to be 10 or more and less than one. Further, when the film formation = body treatment is 'seconds: the selective crack is more than one surface. In addition, 'the treatment of single stone smoldering gas before the film formation process for 5 seconds, the selectivity; the trace is 10_like and unmade __. In order to go to Weiwei _ _ _ _ _ _ _ Wei gas supply, selective cracks are more than 10 and less than _ solid. In addition, and in the nature of the material Qianna coffee 5 secret, choose this 'as long as the single stone gas burning gas supply before the film formation process Treatment, 14 201117297 After the exhaust treatment is performed, the supply of the selective cracked filaments can be treated to the same extent. Also, in the case of a single stone, the second =:: Shi Xi = when the piece is _, for example, by After performing the exhaust treatment of the single-wei gas single-stone soaking body supply treatment, it is possible to suppress μ, and the trace suppression is about 1/1000. According to the present embodiment, the following effects can be obtained: (1) by supplying the film in the process of processing the single-wei gas supply treatment and gas treatment, it can be adsorbed on the fine conductive portion. The tungsten hexafluoride gas starts from the ^ ^ and the film forming center, and the non-absorbed _ substrate s guides the exhaust gas from the film forming chambers 13a, 13b, and the unexposed bismuth is present in the conductivity. The insulating layer of the higher part is formed on the substrate 8, and only the Hetao film can be formed in the portion with high conductivity, and the rotation can be suppressed by the treatment: the film formed by the film is selectively formed in the film. Expected = If it is in the vacuum chamber (4), the condition of partial pressure and partial pressure of hexafluoride gas is 1), which is more remarkable.) Supply argon. Borrow: ^ to improve the exhaust effect of the single stone smoldering gas. Since the exhaust gas == the remaining single Wei gas is exhausted, the time can be shortened. In addition, it can be fully confirmed that the argon gas treated by Wei is 2) even if it is in the argon supply unit of the Weiwei gas piping, it can be normal. The argon supply unit supplies argon gas. Therefore, it is possible to provide a manufacturing apparatus of a semiconductor device which is highly reliable and highly reliable. W is in the early Wei gas supply process, in the vacuum gas and inert gas. At this time, in the absence of J supply,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, Therefore, the Wei gas and the domain hexafluoride gas are reacted in a pipe, and the reaction product is adsorbed to the gas of the six coffees. When the film is formed, there will be a time from the hexafluoride gas to the gas. Six reduction of the body and the reaction product - the same supply to the vacuum · yield - resulting in the semiconductor device 2 'If the invention, the financial and private ship to the processing, from the single stone Xi two = with the official ί to the Wei Wei gas At the same time, 'from the six gasification crane gas with the === hunting this' can inhibit the single stone smoldering gas countercurrent to the hexafluoride crane gas. Therefore, it is possible to avoid the reversal of the gas of the six Dunhua cranes and the gas of the single stone, and it is possible to suppress the anti-enchantment and reduce the yield of the semiconductor device. ~ (5) In the film forming process, hexafluorene can be reduced by a single Wei, ::, film. However, H is a compound having a chemical formula of trifluorocarbon (Lion 3) or fluorite- 6 6βη 1 xFy, which is in the form of a hexa- and a singular gas; Such a compound is attached to a pipe for a single stone smear gas or a pipe for a tungsten hexafluoride gas, and a vacuum tank. In the process of "film processing, there is a detachment from the inner wall of the pipe or the vacuum." The substance is attached to the insulating film of the substrate s, etc., and is formed without a film, and is formed by a reduction reaction with the read domain. m. According to the present invention, hexafluoride is used. The piping for the chemical gas, the temperature of the piping for the gas, the temperature of the piping for the clean gas, and the temperature of the inner wall of the vacuum chamber 21 are maintained at m:, so that the hexafluoride is suppressed due to the lower temperature. The SiHxFy of the reactive organism of the decane gas adheres to the inner wall of each of the above-mentioned pipes or vacuum chambers, and the temperature of the inner wall of the pipe or the vacuum chamber 21 can be suppressed by the heat generation of the SiHxFy due to the high temperature. It is set to 6 〇. The range above 且 and below 150 ° C is preferably set to about 803⁄4. In practical applications, the above embodiments can also be changed as follows: • Each time the substrate S can be performed Clean processing at the time of film formation • In addition to fluorine gas, hexafluoro Chena, nitrogen trifluoride gas, and trifluorocarbon gas (C1F3) can be used as a clean gas. In addition to argon, nitrogen (10)) gas or helium (4) can be used. Gas, =:::=vacuum and sonic gas, and at the same time as the material gas = and in the treatment of the mine, the gas supply at the Weiwei gas supply, the temperature of the gel, only under the machine · = exhaust treatment] It is also possible to supply argon gas and argon gas to the inert gas pipe connected to the gas venting pipe. (5) The effect of the speed, inert gas piping, can also be obtained (1) to • Although the production of the rotating body "phase contains two - _ move / move 17 201117297 export lla, lib, pre-treatment The chambers 12a and 12b and the film forming chambers 13a and 13b may include one loading/unloading port, a pre-processing chamber, and a film forming chamber. It is also possible to arbitrarily set various chambers and carry-in/out ports. Quantity. • Manufacturing device for semiconductor devices, except for the film forming chamber, although pre-processing is included The chamber, the heat treatment chamber, and the transfer chamber, but may include only the loading/unloading port and the film forming chamber'. It is also possible to provide a loading/unloading port in the film forming chamber. Even in this case, (1) can be obtained. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a top view showing a manufacturing apparatus of a semiconductor device according to an embodiment of the present invention. Fig. 2 is a partial cross-sectional view showing a film forming chamber. Fig. 3 shows a film forming failure. Timing diagram of the timing of the gas supply to the chamber, wherein FIG. 3(a), FIG. 3(b), FIG. 3(e), gj3(d), and FIG. 3(e) respectively show the supply of the single Wei gas (SH4). "σ to the single; the gas of the gas (10) gas, the gas of the six gasification crane gas (WF6:), the supply of argon gas for the pipe for the barium fluoride, and the hexafluoride money and the money in the film forming chamber. The partial pressure of the gas. The graph of the effect of the single gas supply treatment and the remaining Wei Wei treatment before the processing. [Description of main component symbols] lla, lib: loading/unloading 〇13a, 13b: film forming chamber 15: transfer chamber 22 • substrate stage 12a, 12b: pretreatment chamber 14: heat treatment chamber 21: vacuum chamber 23 : Shower head 18 201117297 24 . South frequency power supply MFC1 ~ MFC5 : Flow control part P2 : Clean gas 埠 S : Substrate
SiH4 :單矽烷SiH4 : monodecane
Ar :氬氣 25 .渴輪果 P1 :原料氣體埠 P3 :排氣埠 tl〜t4 :時序 WF6 :六氟化鎢 F2/Ar :氟氣/氬氣 19Ar : Argon 25 . Thirsty fruit P1 : Raw material gas 埠 P3 : Exhaust gas tl tl~t4 : Timing WF6 : Tungsten hexafluoride F2/Ar : Fluorine gas / Argon gas 19