TW201116639A - Evaporation device and evaporation method - Google Patents

Evaporation device and evaporation method Download PDF

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Publication number
TW201116639A
TW201116639A TW099126942A TW99126942A TW201116639A TW 201116639 A TW201116639 A TW 201116639A TW 099126942 A TW099126942 A TW 099126942A TW 99126942 A TW99126942 A TW 99126942A TW 201116639 A TW201116639 A TW 201116639A
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Taiwan
Prior art keywords
substrate
mask
vapor deposition
film
container
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TW099126942A
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Chinese (zh)
Inventor
Yuji Matsumoto
Akio Fukuda
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Hitachi Shipbuilding Eng Co
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Publication of TW201116639A publication Critical patent/TW201116639A/en

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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50Substrate holders
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04Coating on selected surface areas, e.g. using masks
    • C23C14/042Coating on selected surface areas, e.g. using masks using masks
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • C23C14/26Vacuum evaporation by resistance or inductive heating of the source
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54Controlling or regulating the coating process

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

In an evaporating container 2 of an evaporation device 1, a material heated by an evaporation source is evaporated and film-forming is performed on a substrate 3 whose film-forming surface 3a is kept upwards. The evaporation device 1 includes: a mask-holding stage 9, fixed and arranged under a discharging container 14 in the evaporating container 2; and a substrate holder 6, carrying the substrate 3 and installed movably freely to a position far or near with respect to a mask 11 that is kept on the mask-holding stage 9. When the substrate holder 6 moves near the mask 11 and the material is evaporated on the film-forming surface 3a, a gap is installed between the mask 11 and the substrate 3. After the film-forming is finished and when the substrate is replaced, particles will not drop from the mask, and it is avoided that the particles attach to a film evaporated on the substrate.

Description

201116639 六、發明說明: 【發明所屬之技術領域】 本發明是有關於一種將基:的成膜面朝向上方而配置 並自蒸發源使膜形成用蒸乳朝向下方產生,藉此來對上述 成膜面進行膜的蒸鍍的下方沈積(d0wn depositi〇n)的蒸 鍍裝置以及蒸鍍方.法。 ·' 【先前技術】 作為對基板的成膜面蒸鍍一種膜的裝置,有一種利用 以成膜面朝下的方式來保持基板的上方沈積(up deposition)而進行蒸鍍的裝置(例如專利文獻丨)。 該專利文獻1所記載的裝置中,在對基板的成膜面來 蒸鐘具有㈣的膜時,使磁性材料製遮罩(mask)吸附於 上述成膜面時,使配置在基板的反成膜面(以下,稱作背 面)側的磁鐵(magnet)朝基板方向移動而緊貼至介在於 磁鐵與基板間的加強板。 另一芩面,當在膜的蒸鍍結束之後,解除遮罩對基板 的吸附時,使磁鐵朝向遠離加強板的方向而移動。 即’該專利文獻1所記載的装置中,使用磁鐵來防止 基板的撓曲,並且提高遮罩與基板的緊貼性。 ^而,在上方沈積的情況下,基板以及遮罩的保持只 能由基板以及遮罩的部來進行,目此存在基板以及遮 罩會發生撓㈣問題。而且,在祕具有酿(pattem) 的膜時,須使遮罩接觸基板的成膜面,因此存在遮罩的粒 子(particle)會附著於基板的成膜面上所蒸鍍的膜的製造 201116639 上的問題。 與此相對,有-種利用以成膜面朝上的方式來保持基 板的下方沈積而進行蒸鑛的裝置(例如專利文獻2)。在該 專利文獻2所賴的裝置的情況下,由整㈣面來支持基 板,進行膜的級’ @此*會發生_上述上方沈積來進 行蒸鍵時的基板的撓㈣題。該撓曲問題在級具有圖案 的膜時對於配置於基板上的遮罩亦同樣。 然而,在始終將遮罩保持於蒸鍍用容器内的狀態下更 ,基板來進行生產的方式中,存在下述問題,# :在膜的 黑錢之後將抵接於遮罩的基板予以分離時,堆積在遮罩上 的蒸鍵物(粒子)會掉落,並_至蒸鍍於基板的膜上。 [先行技術文獻] [專利文獻] [專利文獻1]曰本專利特開2005-187874號公報 [專利文獻2]日本專利特開2〇〇3_317948號公報 【發明内容】 本發明所欲解決的問題點在於,當利用下方沈積來進 仃条鍍時,在始終將料簡於蒸顧容器㈣狀態下更 ,基板來進彳了生產的方式巾,自鮮掉落齡子會附著在 蒸鍍於基板的膜上。 ”為了在利用下方沈積來進行蒸鍍時,使自遮罩掉落的 粒子不附著至縫於基板的成膜面的膜上, 本發明的蒸鍍裝置是一種在蒸鍍用容器内,使由墓鍍 源所加熱的材料蒸發而對將成_朝上保持著的基板進行 201116639 成膜的蒸鍍裝置,其最主要的特徵在於包括: 牲j罩保持台,被固定配置於上述蒸鐘用容器内,以保 持遮罩;以及 ^ 基板固持器(holder),用來载置基板,且相對於由上 =罩保持台所保持的遮罩而接近或分離以移動自如地設 置者,且 述純@持_上麵罩減移動而將上述材料 =於基板的成膜面時,於上述遮罩與上述基板之間存在 間除。 ^發明中,在使遮罩與基板之間存在間隙的狀態下, =由减源所加熱的材料蒸發㈣基板的成膜面進行成 垃因此在ΐ板的更換時’粒子不會自蒸鍍用容 器内所保 罩掉落’從而可防絲子_至紐於基板的成膜 面的膜上。 於本發财,㈣理想的是,上述遮罩與上述基板之 Β、間隙為10〜3〇〇卿。其原因在於,若上述間隙小於 μπι ’則在材料的驗時上述間隙會被填埋,從而在使 $自遮罩分_ ’有時粒子會自遮罩料而堆積於基板 於 '膜面上。而且’若上述間隙超過3〇〇叫’則自蒸發源 ^的材料會進入遮罩與基板之間,從而會導致成膜精 鐵作差例如會導致圖案化(Patterning)的邊緣(edge) 變得不明確。 [發明的效果] 本發明中’在材料對基板的成膜面的蒸鍍時,使遮罩 201116639 - 與基板之f接在規定的間隙,因此在成縣束後的基板更 換時粒子不會自遮罩掉落,從而可防止粒子附著至蒸錢 於基板的成膜面的膜上。 … ^為讓本發明之上述和.其他目的、特徵和優點能更明顯 易it,下文特舉較佳實施例,並配合所附圖式,作詳細說 明如下。 【實施方式】 本發明中,藉由在材料對基板的成膜面的蒸鍍時,使 遮罩與基板之間存在間隙,來實現下述目的,即:在利用 下^尤積來進行級時’使得自遮罩掉落的粒子不會附箸 至療鐘於基板的成膜面的膜上。 [實例] 以下 便用圖1 (a)、圖1 (b)以及圖2 (a)、圖, (b),對用於實施本發明的形態進行詳細說明。 圖1 (a)、圖1 (b)是表示本發㈣蒸縣置的概% 構成的剖面圖,圖2 (a)、圖2 (b)是構成本發明的蒸舍 裝置的遮罩、料保持台、基板固制部的詳細圖。 在圖1 (a)、圖1 (b)以及圖2 (a)、圖2 (b)中, 疋本發明的蒸鐘裝置’其在被保持為規定的真空狀態的 鑛用容器2内,以形成有透明電極的成膜面%朝上g方^ 來固疋保持基板3,並使材料得到蒸链,該蒸鍍裝置 述構成。 4是在上述蒸鏡用容器2内保持基板3的外周 的環狀的基板支持台’ 5是同樣支持基板3 _周側^ 7 201116639 』基板支持“、基板支 的下方所朗餘6的上升㈣,板支持台4 持器6而上升。再者二而二γ= 的部分,設有貫穿基板二 中,⑻以及圖2⑷、圖2⑴的示例 T。該基板== Ϊ=ί 導桿(嘛‘該導桿6: “ ^用谷器2的底面2a,且連接於上述電動氣 ^ =端所安裝的平*⑽e) 8的上表^於聽用容器的2 々上述導桿6a所貫穿的部分設有密封部2b,以使得外部 氣體不會流入蒸鍍用容器2内。 ° 9是蒸容器2内的設置於上述基板支持台 ==台’在該遮罩保持台9上張設著施有規定圖 ,遮罩11是由作為低膨脹率的磁性材料的鎳鋼(土^肛) 所製造,為了抑制因熱膨脹引起的撓曲變大,該遮罩U 承受張力(tension)而安裝在遮罩保持台9上。 12是設置於上述蒸鍍用容器2上方祕發用容器(蒸 鍍源),其對材料進行加熱而使該材料蒸發。在該蒸發用容 器12内蒸發的材料通過蒸發材料誘導管13而被導入上述 蒸鑛用容器2内的頂壁2c附近所設的放出用容器14内: 201116639j 上述蒸發材料誘導營+ 而將蒸發用容器12與放出容器2的頂壁乂 材料誘導管13所貫穿的頂辟:予以連接’於該蒸發 得外部氣趙不會流=亦設有密封部,叫 喷嘴=====間隔而設有多個 來的材料均等地分散並放出。雖而ϊ 凝固或附著。谷益14加熱至規定溫度而防止材料的 再者’在上述蒸發材料誘導f 13的中途,安 且’該些蒸發材料誘導管13或開關閥15、亦藉由 護套加熱$等的加熱裝置來防止材料的凝固或附著。 而且’基板3朝向上述紐用容器2 β =容—的間闕(― 機械# (robot arm) 16來進行。 並且,本發明的蒸鑛裝置1在使上述基板固持器6上 升= 吏基板3朝遮罩n接近移動以將上述材料蒸鑛至基板 3々成膜© 3a時,使遮罩11與基板3之間存在例如ι〇〜 3〇〇 μχη的間隙。但是,只要是非接觸狀態且在材料的莱鍍 時間隙不會被填埋,則間隙亦可小於1〇μιη。 在該遮罩11與基板3之間設置間隙的機構可為以下任 何構成,例如,在使電動氣缸裝置7的桿突出移動至突出 限度為止時使得上述間隙得以存在的機構,或者在適合的 201116639 位置配置擋止部(st〇pper)的機構。 使用上述構成的本發明的舰裝置丨來储料蒸 基板3的成膜面3a時,以下述方式來進行。 (蒸鍍前的準備) 利用機械臂16 ’將在成膜面3a上形成有透明電 基板3搬人蒸朗容器2㈣部,並載置於基板支持台* 之上0 隨後’藉由附有編碼器的電動氣缸7,-方面進行速 方岐基板轉器6上升,以支持著上述基板支 寺° $上所載置的基板3的背面3b而使基板3上升。 =由編碼器的偵測而判斷為基板3與遮罩u的間隙 的驅動^的值例如達到1〇〜叫時,停止電動氣紅7 (蒸鍍) 別材料誘導管13、開關閥15分 蒗發、、w许炎t ,皿度。於瘵發用容器12中’將材料加熱至 而使該材料蒸發。隨後,將開關閥15打開, 使材2蒸發材料誘導管13而導人至放㈣容器Μ内。 放出,門^^料自放出用容器14的喷嘴14&朝向基板3 規定的ii結成膜面3a的蒸鍍。持_蒸鍵直至 以上是本發明的蒸鍍方法。 (後處理) 當蒸錢結束時,關閉該開關閥15,使蒸發用容器12 201116639 f 的加熱溫度自材料的蒸發溫度下降而使蒸發結束。當材料 的蒸發結束時,使電動氣紅7的桿退人來使載置有蒸鐘完 成的基板3的基板固持器6下降而自遮罩u分離。 藉由傳導氣缸7的捍的退入,自遮罩n分離的上述基 板/抵接於基板支持台4。在基板3抵接於絲支持台4 之後’僅基板S1持H 6下降。當藉由編碼器的彳貞測而判斷 為基板固持器6已下降至規定位置為止時,停止電動氣缸 7的驅動。賴,機械f 16,將紐完·基板3搬 出至蒸鍍用容器2的外部。 根據藉由上述使用本發明蒸鍍裝置丨的本發明方法所 進行的成膜,即使在將遮罩u始終保持於紐用容器2 内的狀態下更換基板3,粒子亦不會自遮罩π掉落,從而 可防止粒子喊至級於基板3的賴面3a的膜上。 ^本發明並不限於上述示例,只要是在各申請專利範圍 所記載的技術思想的範_,#然亦可適當變更實施形,離。 例如,亦可使放出用容器14旋轉,或者使放出用容。器 14向下方向移動。 成為^^/述相^,為了使基板3麵罩11的間隙 成為規疋的值,必須藉由計測來使遮罩11的撓曲已知。麸 而’如圖3U)、圖3⑴所示,當在基板固持器6的中、 心。卩设置有位移感測器17時,能夠偵測遮罩u盥: 之,的咖’因此遮罩u的撓曲亦可麟Μ。因^板 動軋缸裝置7亦可為未附有編碼器者。 該圖3 U)、圖3⑴的示例中,藉由仇移感測器η 11 201116639 來偵測基板3的成膜面3 a與遮罩a! 缸7的驅動,除此以外,與上述示例同樣地進=電動氣 而且,在上述示例中,於遮罩保持台:卜 Π,但亦可改為在遮罩保持台9設 ^者遮罩 免發生因遮罩11的熱所造成的挽曲。、以避 雖然本發明已以較佳實施例揭露 限定本發明,任何熟習此技藝者, 範圍當視後附之申請者=本發⑽ 【圖式簡單說明】 編L1丨(a)、圖1 (b)是表示本發明的蒸鐘裝置的概略 圖’圖1(a)是基板搬入時的圖,圖i(b)是 逆圖2⑴是構成本發明的蒸鐘裝置的遮罩、 對於讲蓄台、基板固持器部的詳細圖,圖2 (a)是基板相 U罩而分離的狀態的圖,圖2 (b)是基板 而接近的狀態的圖。 圖f (a)、圖3 (b)是表示構成本發明的蒸鑛裝置的 遮罩保持台、基板固持器部的另一例的與圖 圖2 (b)同樣的圖。 【主要元件符號說明】 1 :蒸鍍裝置 2:蒸鍍用容器 2a :底面 12 201116639 2b :密封部 2c :頂壁 2d :閘閥 3 :基板 3a :成膜面 3b :背面 4 :基板支持台 5 :基板支持棒 6 :基板固持器 6a :導桿 7:電動氣缸裝置 8 :平台 9 :遮罩保持台 11 :遮罩 12 :蒸發用容器 13 :蒸發材料誘導管 14 :放出用容器 14a :喷嘴 15 :開關閥 16 :機械臂 17 :位移感測器[Technical Field] The present invention relates to a method in which a film formation surface of a substrate is disposed upward and a vapor deposition film for forming a film is formed downward from an evaporation source, thereby The vapor deposition apparatus and the vapor deposition method of depositing the lower surface of the vapor deposition of the film on the film formation surface. [Prior Art] As a device for vapor-depositing a film on a film formation surface of a substrate, there is a device in which deposition is performed by holding an upper deposition of the substrate with the film formation surface facing downward (for example, a patent) Literature 丨). In the apparatus described in Patent Document 1, when the film having the (4) is vaporized on the film formation surface of the substrate, when a mask made of a magnetic material is adsorbed on the film formation surface, the substrate is placed on the film formation surface. A magnet on the side of the film surface (hereinafter referred to as a back surface) moves in the direction of the substrate and adheres to a reinforcing plate interposed between the magnet and the substrate. On the other hand, when the deposition of the mask on the substrate is released after the vapor deposition of the film is completed, the magnet is moved in a direction away from the reinforcing plate. In other words, in the device described in Patent Document 1, a magnet is used to prevent deflection of the substrate, and the adhesion between the mask and the substrate is improved. On the other hand, in the case of deposition on the upper side, the holding of the substrate and the mask can be performed only by the substrate and the portion of the mask, and there is a problem that the substrate and the mask are scratched. Further, in the case of a film having a pattem, the mask must be brought into contact with the film formation surface of the substrate, and therefore, the film in which the particles of the mask adhere to the film formation surface of the substrate is manufactured 201116639 The problem. On the other hand, there is a device in which the deposition is performed by holding the lower side of the substrate so that the film formation surface faces upward (for example, Patent Document 2). In the case of the apparatus according to Patent Document 2, the substrate is supported by the entire (four) plane, and the level of the film is performed. @@* This causes the problem of the substrate (4) when the upper layer is deposited to perform the steaming. This problem of deflection is also the same for the mask disposed on the substrate when the film has a pattern. However, in the state in which the mask is always held in the vapor deposition container, the substrate is produced in the following manner. When the substrate is in contact with the mask after the black money of the film is separated, The evaporated bonds (particles) deposited on the mask are dropped and deposited on the film of the substrate. [PRIOR ART DOCUMENT] [Patent Document 1] [Patent Document 1] Japanese Laid-Open Patent Publication No. 2005-187874 [Patent Document 2] Japanese Patent Laid-Open Publication No. Hei No. Hei. The point is that when the deposition is carried out by using the deposition below, the material is simply cooled in the state of the container (4), and the substrate is fed into the production method, and the falling age adheres to the evaporation on the substrate. On the membrane. In order to perform vapor deposition by deposition under the surface, the particles falling from the mask are not adhered to the film which is sewn on the film formation surface of the substrate, and the vapor deposition device of the present invention is used in a vapor deposition container. A vapor deposition apparatus for forming a film formed by evaporating a material of a tomb plating and performing a film formation on 201116639, the main feature of which comprises: a jig holding stage, which is fixedly disposed in the above-mentioned steam clock The inside of the container is used to hold the mask; and the substrate holder is used to mount the substrate, and is close to or separated from the mask held by the upper = cover holding table to move freely, and When the above material is on the film formation surface of the substrate, there is a thinning between the mask and the substrate. In the invention, there is a gap between the mask and the substrate. In the state, the material heated by the source is evaporated (4) The film-forming surface of the substrate is made into a waste. Therefore, when the raft is replaced, the particles are not dropped from the cover of the vapor-deposited container, thereby preventing the silk _ To the film on the film-forming side of the substrate. (4) Ideally, the gap between the mask and the substrate is 10 to 3 。. The reason is that if the gap is less than μπι ', the gap will be filled during the inspection of the material, thereby Make $ self-masking _ 'some particles will accumulate on the substrate on the 'film surface' from the mask. And if the gap exceeds 3 〇〇, then the material from the evaporation source will enter the mask and substrate. Between the two, the film-forming fine iron is caused to be poor, for example, the edge of the pattern becomes unclear. [Effect of the Invention] In the present invention, the evaporation of the film-forming surface of the substrate to the substrate When the mask 201116639 - is placed in a predetermined gap with the substrate f, the particles do not fall off from the mask when the substrate after the cluster is replaced, thereby preventing particles from adhering to the film formation surface of the substrate. The above-mentioned and other objects, features and advantages of the present invention will become more apparent from the following detailed description. In the present invention, film formation by a material on a substrate During vapor deposition, there is a gap between the mask and the substrate to achieve the purpose of making the particles falling from the mask not attached to the clock when the stage is used. The film is formed on the film formation surface of the substrate. [Examples] Hereinafter, embodiments for carrying out the invention will be described in detail with reference to Figs. 1(a), 1(b) and 2(a), and (b). Fig. 1 (a) and Fig. 1 (b) are cross-sectional views showing the configuration of the steam generator of the present invention, and Fig. 2 (a) and Fig. 2 (b) are masks constituting the steamer of the present invention. Detailed view of the material holding table and the substrate fixing portion. In Fig. 1 (a), Fig. 1 (b), and Fig. 2 (a), Fig. 2 (b), the steaming device of the present invention is in the In the mining container 2 which is maintained in a predetermined vacuum state, the substrate 3 is fixed to the upper surface of the film forming surface on which the transparent electrode is formed, and the material is vaporized. 4 is an annular substrate support table 5 in which the outer periphery of the substrate 3 is held in the vapor-contained container 2, and the support substrate 3_circumferential side 7 201116639 』substrate support ", the rise of the lower portion of the substrate support 6 (4) The board support table 4 is raised by the holder 6. The second and second γ= portions are provided with the example T through the substrate 2, (8) and Fig. 2 (4) and Fig. 2 (1). The substrate == Ϊ=ί guide rod ( Well, the guide rod 6: "^ uses the bottom surface 2a of the grain device 2, and is connected to the upper surface of the above-mentioned electric motor ^ = end of the flat * (10) e) 8 of the upper surface of the hearing container 2 of the above-mentioned guide rod 6a The penetrating portion is provided with a sealing portion 2b so that external air does not flow into the vapor deposition container 2. In the case of the above-mentioned substrate support table == table, the inside of the steaming container 2 is placed on the mask holding table 9 with a predetermined drawing, and the mask 11 is made of nickel steel which is a magnetic material having a low expansion ratio ( In order to suppress the increase in deflection due to thermal expansion, the mask U is tension-loaded and attached to the mask holding table 9. Reference numeral 12 denotes a secret container (vapor deposition source) provided above the vapor deposition container 2, which heats the material to evaporate the material. The material evaporated in the evaporation container 12 is introduced into the discharge container 14 provided in the vicinity of the top wall 2c in the above-described vapor deposition container 2 by the evaporation material induction tube 13: 201116639j The above evaporation material induces the camp + and will evaporate The container 12 and the top wall of the discharge container 2 are used to induce the dialysis through which the tube 13 is connected: to be connected to the evaporation of the external air, which does not flow; also has a sealing portion, called a nozzle ===== interval A plurality of materials are uniformly dispersed and discharged. Although it is solidified or attached.谷益14 is heated to a predetermined temperature to prevent the material from being further 'in the middle of the above-mentioned evaporation material induction f 13 , and the heating material induction tube 13 or the on-off valve 15 is also heated by the sheath. To prevent solidification or adhesion of the material. Further, the 'substrate 3 is oriented toward the above-mentioned button 2 of the new-purpose container 2 β-capacity (the robot arm 16). Further, the metallizing device 1 of the present invention raises the substrate holder 6 = the substrate 3 When the mask n is moved close to vaporize the material to the substrate 3 to form the film © 3a, there is a gap between the mask 11 and the substrate 3, for example, ι 〇 3 〇〇 μ χ n. However, as long as it is in a non-contact state The gap may not be buried when the material is plated, and the gap may be less than 1 μm. The mechanism for providing a gap between the mask 11 and the substrate 3 may be any of the following configurations, for example, in the electric cylinder device 7 The mechanism in which the above-mentioned gap is present when the rod is moved to the protruding limit, or the mechanism in which the stopper is disposed at a suitable position of 201116639. The ship device of the present invention configured as described above is used to store the steamed substrate. In the case of the film formation surface 3a of 3, it is carried out as follows. (Preparation before vapor deposition) The transparent electric substrate 3 is formed on the film formation surface 3a by the robot arm 16', and the container 2 (four) is placed and placed. On the substrate support table* above 0 The motorized substrate 7 with the encoder is lifted to support the back surface 3b of the substrate 3 placed on the substrate support to raise the substrate 3. When the encoder detects that the value of the drive of the gap between the substrate 3 and the mask u is, for example, 1 〇 to 叫, the electric air red 7 (vapor deposition) is stopped, and the material induction tube 13 and the on-off valve 15 are split. ,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, In the container 。, the door is discharged from the nozzle 14& of the discharge container 14 to the ii junction film formation surface 3a defined by the substrate 3. The steam evaporation method is continued until the above is the vapor deposition method of the present invention. When the steaming is over, the switching valve 15 is closed, so that the heating temperature of the evaporation container 12 201116639 f is lowered from the evaporation temperature of the material to end the evaporation. When the evaporation of the material ends, the rod of the electric gas red 7 is retired. The substrate holder 6 on which the substrate 3 on which the steam bell is completed is lowered to be self-masked By the retraction of the crucible of the conduction cylinder 7, the substrate separated from the mask n is brought into contact with the substrate support table 4. After the substrate 3 abuts against the wire support 4, only the substrate S1 is lowered by H6. When it is determined by the detection of the encoder that the substrate holder 6 has been lowered to the predetermined position, the driving of the electric cylinder 7 is stopped. The machine f16 carries the button 3 to the vapor deposition container 2 According to the film formation by the method of the present invention using the vapor deposition device of the present invention described above, even if the substrate 3 is replaced while the mask u is always held in the container 2, the particles are not self-contained. The mask π is dropped, so that the particles are prevented from squeezing onto the film of the facing 3a of the substrate 3. The present invention is not limited to the above examples, and may be modified as appropriate, as long as it is a technical idea described in the scope of each patent application. For example, the discharge container 14 may be rotated or discharged. The device 14 moves in the downward direction. In order to make the gap of the mask 3 of the substrate 3 a regular value, it is necessary to make the deflection of the mask 11 known by measurement. The bran is as shown in Fig. 3U and Fig. 3 (1), and is in the center of the substrate holder 6. When the displacement sensor 17 is provided, it is possible to detect the mask of the mask u, so that the deflection of the mask u can also be used. The plate rolling device 7 may also be an encoder without an encoder. In the example of FIG. 3 U) and FIG. 3 ( 1 ), the film forming surface 3 a of the substrate 3 and the driving of the mask a! cylinder 7 are detected by the hatching sensor η 11 201116639, and the above example In the same way, in the above example, in the mask holding table: dice, but it is also possible to set the mask in the mask holding table 9 to avoid the occurrence of the heat caused by the heat of the mask 11. song. The present invention has been defined by the preferred embodiments, and any skilled person in the art, the scope of which is attached to the applicant = the present invention (10) [Simple description of the drawing] L1丨(a), Fig. 1 (b) is a schematic view showing a steaming device of the present invention. Fig. 1(a) is a view showing a case where a substrate is carried in, and Fig. 1(b) is a plan view showing a mask of the steaming device of the present invention. FIG. 2(a) is a view showing a state in which the substrate phase U is separated and the substrate holder is separated, and FIG. 2(b) is a view showing a state in which the substrate is close to each other. Fig. f (a) and Fig. 3 (b) are views similar to Fig. 2 (b) showing another example of the mask holding table and the substrate holder portion constituting the steaming device of the present invention. [Description of main component symbols] 1 : vapor deposition device 2: vapor deposition container 2a: bottom surface 12 201116639 2b: sealing portion 2c: top wall 2d: gate valve 3: substrate 3a: film formation surface 3b: back surface 4: substrate support table 5 : Substrate support rod 6 : Substrate holder 6 a : Guide rod 7 : Electric cylinder device 8 : Platform 9 : Mask holding table 11 : Mask 12 : Evaporation container 13 : Evaporation material induction tube 14 : Release container 14 a : Nozzle 15: On-off valve 16: Robot 17: Displacement sensor

Claims (1)

201116639 七、申請專利範園: 1. 一種蒸鍍裝置,i名茧 加埶的材料mi%# X、蒸鍍用谷器内,使由蒸鍍源所 發而對將成膜面朝 以保 膜,此蒸織置的特徵在於包括:料者的基板進订成 持遮Ϊ.罩ΓΓ’被固定配置於上述蒸鑛用容器内, 基板固持器,用來载置基板,且 ^ ^ 持台所保持的遮罩而接近或分離以移動自如地設置著,且 間隙 替固持器朝上述遮罩接近移動而將上述材料 蒸,於基板的賴鱗,於上闕罩與上絲板之間存在 ^如申請專利範圍第1項所述的蒸鍍裝置,其中 設置有附有編碼器的電動氣虹,以作為上述基板 器的對遮罩的接近或分離移動裝置。 3.如申請專利範圍第1項所述的蒸鍍裝置,其中 於上述基板固持器的中心部設置有位移感測器。 4..如申請專利範圍第1項至第3項中任一項所述的 鐘裝置,其中 … 上述遮罩與上述基板之間的間隙為1〇〜3〇〇μιη。 5. —種蒸鍍方法’其在蒸鍍用容器内,使由蒸鍍源所 加熱的材料蒸發而對將成膜面朝上保持著的基板進行成 膜,此蒸鍍方法的特徵在於, 相對於由固定配置在上述蒸鍍用容器内的遮罩保持台 所保持的遮罩,使載置基板的基板固持器接近移動至基板 與遮罩之間的間隙達到10〜300 μηι為止之後造行成膜。201116639 VII. Application for patent garden: 1. A vapor deposition device, i name 茧 埶 埶 material mi% # X, in the vapor deposition barn, so that the vapor deposition source is issued and the film is formed facing The film is characterized in that: the substrate of the material is ordered to hold the cover. The cover is fixedly disposed in the steam container, and the substrate holder is used for placing the substrate, and The mask held by the table is close to or separated to be movably disposed, and the gap is moved toward the mask to move the material, and the material is evaporated on the substrate, and exists between the upper cover and the upper plate. The vapor deposition apparatus according to claim 1, wherein an electric air ray with an encoder is provided as a proximity or separation moving means for the mask of the substrate. 3. The vapor deposition device according to claim 1, wherein a displacement sensor is provided at a central portion of the substrate holder. 4. The clock device according to any one of claims 1 to 3 wherein the gap between the mask and the substrate is 1 〇 3 〇〇 μηη. 5. A vapor deposition method in which a material heated by a vapor deposition source is evaporated in a vapor deposition container to form a substrate on which a film formation surface is held upward, and the vapor deposition method is characterized in that The substrate holder held by the substrate is moved to a distance of 10 to 300 μηι after the gap between the substrate and the mask is moved to the mask held by the mask holding table that is fixedly disposed in the vapor deposition container. Film formation.
TW099126942A 2009-11-05 2010-08-12 Evaporation device and evaporation method TW201116639A (en)

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