201108326 、發明說明： 【發明所屬之技術領域】 本發明涉及一種能處理大尺寸晶體的等離子體韻刻裝 置’尤其涉及一種能提高等離子體均勻性的等離子體钱刻裝 置，它將一個完整的陰極内襯從外部插入到陰極裝置中，其 中所述的陰極内襯在兩層上設有多個第一氣孔和第二氣孔， 它們彼此相互間隔，使反應室中的反應氣體能同時保持氣體 流動和廢氣流動的均勻性，防止接地的完整陰極内襯的下部 使反應室發生閃光現象。 【先前技術】 。用於半導體積體電路器件的大尺寸晶片和作為液晶顯示 器（LCD)等關鍵部分使用的玻璃基板通常會通過在一個表面上 形成若干__ ’並選擇性地僅將部分薄騎移除，形成 某個預定形狀的超細微結構’並職—個漏結構的環形或 薄的薄膜層。 上述的各爾理方法主要是祕__從外面分離晶 片或基板的内室或反應室中。 在上述方法中較優選的是蝕刻方法 通入一種反應氣體（如四氟化碳（C{?4)， ，向内室或反應爐中 氯氣(Ch)，溴化氫 (HBr)等），在-個晶片表面產生等離子體反應，從而去冷預BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma engraving device capable of processing large-sized crystals, particularly relating to a plasma engraving device capable of improving plasma uniformity, which will have a complete cathode The inner liner is externally inserted into the cathode device, wherein the cathode liner is provided on the two layers with a plurality of first pores and second pores which are spaced apart from each other such that the reaction gas in the reaction chamber can simultaneously maintain gas flow. The uniformity of the flow of the exhaust gas prevents the grounding of the lower portion of the complete cathode lining from causing flashing in the reaction chamber. [Prior Art]. Large-sized wafers for semiconductor integrated circuit devices and glass substrates used as key parts such as liquid crystal displays (LCDs) are usually formed by forming a plurality of __' on one surface and selectively removing only a portion of the thin ride. An ultra-fine structure of a predetermined shape 'joined-a leaky structure of a ring or thin film layer. The above-mentioned methods are mainly secreted from the outside to separate the inner chamber or reaction chamber of the wafer or substrate. It is more preferable in the above method to pass a reaction gas (such as carbon tetrafluoride (C{?4), chlorine gas (Ch) in an internal chamber or a reaction furnace, hydrogen bromide (HBr), etc.). Producing a plasma reaction on the surface of a wafer to remove the cold
由於在烟方法中最重要的是維持整個底板表面上的钱 201108326 刻均勻性，因此内室中需要形成均勻的等離子體，這些等離 子體與整個底板表面接觸，從而改進餘刻底板的均勻性，防 止過程中產生錯誤。 在個傳統的等離子體钱刻裝置中，為了使内室中的等 ，子體是均勻的，需要在陰極裝置的外關上安裝—塊設有 多個氣孔的擋板，在时的下面安裝_個泵排出部分，這樣 就可以操作躲排出部分絲排出副產物，如内室中的一種 反應氣體’ -種聚合物，一種顆粒物等。於是傳統的等離子 體餘刻裳置就能通過均勻地排出内室令的反應氣體來確保等 離子體的均勻性。 即如反應氣體等副產物能不斷地從内室均勻地流出，於 疋内至中的等離子體就在底板上均勻地散開，而不會受到反 應氣體、副產物等產生的阻力影響。 但疋，上述傳統的钱刻裝置具有下述問題。 首先，由於等離子體反應中產生的反應氣體、聚合物或 顆粒物是泵排過-塊擋板的，這賴㈣的反應氣體、副產 物等有-綱勻性的_。因此就產生了無法保證内室中等 離子體均勾性的問題。 其次，由於擋板不能有效地與内室進行接地，因此就產 生了這樣一個問題，即會發生等離子體閃光現象，其中氣孔 間的等離子體是非均勻地閃光的。 再次，由於沒有設置控制氣孔孔徑比率的控制構件，因 此就產生了這樣-個問題’即不能通過控制内室中的氣體流 動或流出來暫態地控制底板的蝕刻率。 201108326 【發明内容】 本發明的-個優選實施方面是解決至少―個上述問題和/ 或缺點，提供至少-種下述優點。因此，本發明的一個優選 實施方面是保持内室中氣體流動和流出的均勻性，通過泵排 出等離子反射產生的-種反應、—縣合物或一麵 粒物，它們穿過完整的陰極内襯，該内襯在兩層上設有多個 第一氣孔和第二氣孔。 本發明的另-個優選實施方面是改進陰極内襯的地面反 馨 作用力，從而防止氣孔間產生等離子體閃光現象。 本發明還有一個優選實施方面是通過實現對第二氣孔的 孔徑比例進行控制來保證整個底板表面的餘刻均勻性，並通 過内室中的氣體流動和流出實現暫態控制來控制等離子體的 均勻性。 如本發明一方面所述地公開了一種等離子體蝕刻裝置。 裝置包括一個内室，一個陰極裝置和一個完整的陰極内襯。 所述的内腔形成了一個等離子體反應間隔。設置在内室的内 ® 中間部分的陰極裝置可以支標一塊底板。所述的完整的陰極 内襯在兩層上設有多個第一氣孔和第二氣孔，，它們彼此相 互間隔，從而使内室中的氣體流動和流出保持均勻性，並且 該陰極内襯從外部插入到陰極裝置十，並且其底部與内室的 内表面相連。 所述的陰極内襯包括一塊放射狀地設有多個第一氣孔的 檔板，一個上端與擋板内圓周相連的固定長度的襯墊部分， 一個設置在襯墊部分下端'與内室連接且放射狀地設有多個 201108326 第二氣孔的排氣部分。 擋板的多個第-氣孔由多個相互間隔且每個間距均 的槽組成。 擋板内圓周上有若干處與襯墊部分的下表面螺接。 所述的排氣部分包括一塊排氣板，該排氣板上以固定間 隔地設有多個第二氣孔，這些第二氣孔與外方向之間的斜二 都疋相同的’此外所述的排氣部分還包括—塊沿排氣板底部 的外圓周延伸到外面的連接板，該板與内室螺接。 設置在排氣板上表面的一塊控制板可以進行滑行旋轉， 該控制板上設有多個與多個第二氣孔對應的控制部分，它們 也能同時控制第二氣孔的孔徑比例。 排氣板的上表面上設有多塊間隔控制板，它們可以在排 氣板的上部滑行，從而控制那些第二氣孔中每個氣孔的孔徑 比例。 所述的裝置還包括一個墊圈，它可以防止反應氣體在連 接板的底側表面上發生茂漏。 所述的陰極内襯上塗有氧化銘(Al2〇3)和氧化纪(γ2〇3)。 【實施方式】 下面將結合附圖具體說明本發明的優選實施例。為了使 下述說明更簡潔’將會在說明中省略其中公知的結構和構 造。 對本發明的具體描述將結合附圖完成。 圖1是本發明所述的等離子體蝕刻裝置的侧視圖。 如圖1所示，本發明所述的等離子體蝕刻包括一個内室 201108326 1、一個陰極裝置10和一個陰極内襯5〇。 所述的内室1從内部分隔出一個等離子體反應的空間。在 内室1的頂部中間安裝了一個通往反應氣體的氣體注射器5。 内室1的底部中間設有一個排氣部分8，用於排出某種反應副 產物’如反應氣體、聚合物、顆粒物等。 此外，内室1的一側還與外部接地，通過一種無線電頻率 (RF)電源7將内室1中的反應氣體轉化為一種等離子體狀態。 所述的陰極裝置10為RF電源7形成一個電極，同時支樓一 ® 塊晶片或底板（圖中未顯示），因此它是垂直地設置於内室1 的中部。 所述的陰極裝置10與RF電源7相連，並穩固地安裝在底板 的上表面。 因此，RF電源7通過電流去除通入内室1的反應氣體，並 將反應氣體轉化為一種等離子態，再通過等離子體來触刻處 理底板表面。 φ 所述的陰極裝置10可以包括一個用於穩定地固定底板的 靜電吸盤（圖中未顯示），並且還可以安裝一根氣體管（圖 中未顯示），氦氣(He)等氣體在這根氣體管中迴圈，冷卻底 板。 所述的靜電吸盤是一種通過在電極表面和目標物之間形 成電吸引力，吸住一目標物的裝置。 反應氣體穿過與陰極裝置1〇中心在同一條線上的氣體注 射器5，進入到内室1的内部，使底板表面上可以均勻地形成 等離子體。 201108326 因此’ RF電源7將内室1中的反應氣體轉化為一種等離子 態’然後與底板表面發生反應’選擇性地钱刻底板，最後穿 過内室1底部的排氣部分8流出到外面。 所述的陰極内概50從外面插入.並安裝到陰極裝置1〇中。 在下面涉及圖2和圖3的内容中將會進一步描述所述的陰極内 襯50。 圖2是本發明一個優選實施例所述的陰極内襯5〇的分解示 意圖。圖3是本發明一個優選實施例所述的陰極内襯5〇的結構 不意圖。 所述的陰極内襯50在兩層上設有多個第一氣孔22和第二 氣孔42，它們彼此相互間隔，使内室_的氣體流動和流出能 保持均勻性。所述的陰極内襯5〇包括一塊擋板2〇、一個襯塾 部分30和一個排氣部分40。 擋板20使等離子體反應氣體能夠在内室1中存留一個固定 的時間，然後再排出這些等離子體反應氣體。如圖所示，所 述的擋板20安裝後能夠與圓形襯墊部分30的上表面相連，並 位於陰極裝置1〇上端的外圓周表面上。 因此，擋板20的内圓周表面與陰極裝置1〇的外圓周表面 疋對應地設置的。擋板20的外圓周表面與内室1的内圓周表面 疋對應地設置的。因此，擋板2〇是垂直地安裝在陰極裝置1〇 的外圓周表面和内室1的内圓周表面之間的間隔部分處。 擋板20的形狀為具有固定厚度的圓環。擋板2〇的中心上 設有一個穿過擋板的插孔25，陰極裝置10可以插入到這個插 孔25中。 201108326 擋板20的外圓周不僅限於圓形，它也可以是矩形等根據 内室1的内圓周表面形狀確定的形狀。 因此，擋板20的外圓周表面與内室丨的内圓周表面接觸連 接，而插孔25的内圓周表面與陰極裝置10的外圓周表面接觸 連接。因此，内室1中的反應空間被分隔成上部和下部。 擔板20上沿插孔25的圓周處間隔地設有多個組合孔2此， 使用這些組合孔20b可以將固定槽2〇a連接並固定到襯墊部分 30的上表面。 _ 帛-氣孔22是設置在擋板2〇中。 反應氣體會部分穿過的第一氣孔22是具有固定長度的 槽，它們以固定的間隔設置成放射狀。 第一氣孔22不僅限於設置成槽形，也可以設置成其他適 於等離子體環境條件的形狀。 〃 所述的襯墊部分30從外面插入到陰極裝置1〇中，該部分 為上下兩端均開口的圓形。 • 所述的襯墊部分30設有一個與陰極裝置10的外圓周表面 對應地接觸_圓職面。此外，軸(墊部分3Q的上表面與 擋板20的組合孔應地設有多她合錢b。所以，襯塾 部分30通過固定槽20a與擋板2〇上插孔25的下圓周表面接觸連 接。 所述的排軋部分4〇是設置在所述襯墊加的下面。 …所述的職部分4G使反聽體、副產鱗穿職板2〇, 並最終排出到内室1的排氣部分8。所述的排氣部分仙包括一 個從襯墊部分30的底端伸出的排氣板41和一個從排氣健的 ί s) 201108326 底端上外關表面向外伸出的連接板45 = 所述的排氣板41是以固定的角度向外傾斜於襯墊部分3〇 下端的外_。所述的第二氣孔42均㈣定關隔設置。 所述的第二氣孔42不限於具有如圖所示的形狀，它也可 以被設置成各種形狀，如_、長孔形等。 所述的多個連接板45分別從排氣板41下端的外圓周上沿 垂直方向延伸一個固定的距離。這些連接板45設有多個組合 孔4〇b，它們與固定槽4〇a組合設置用於固定内室1。 於是’由於固定槽40a將連接板45穩定地組合到内室1 上，此外還增加了一個地面反作用力，因此所述的陰極内襯 50能夠防止傳統的等離子體蝕刻裝置+，擋板未穩定接地使 氣孔中出現的等離子體閃光現象。 連接板45和内室1之間安裝了一個墊圈70，來防止反應氣 體的非必要洩漏。 所述的墊圈70可以是圓環形金屬環。 此外還可以在排氣板41的外面，與排氣板41對應地設置 一塊控制板60，使之可以滑動旋轉。 所述的控制板60是可旋轉滑動地沿排氣板41設置的，其 中控制板60從外面插入襯墊部分30上，並安裝在排氣板μ的 上表面。所述的控制板60被設置成與排氣板41相對應的環 形。 所述的控制板60上以一定的間隔，與排氣板41上的第二 氣孔42對應地設置了多個控制部分62。 因此，如圖3所示，如果旋轉控制板60，即可以調節其與 201108326 控制部分62的重疊面積，於是可以同時控制排氣板41上每個 第二氣孔42的孔徑比例均。 即，一位元操作者根據箭頭63的指示以合適的角度旋轉 所述的控制板60，於是就可以控制第二氣孔42的孔徑比例來 選擇條件，同時泵排氣，暫態地控制内室1中的氣體流動和流 出。 圖4所示的是本發明另一個優選實施例所述的陰極内襯 50。除了控制板結構之外，本實施例的結構與上述實施例均 相同’因此下面將僅說明一個改進的結構。 如圖所示，多個單獨的控制板80被安裝在排氣板41的上 表面。 所述的多個單獨控制板80是與排氣板41上第二氣孔42的 數量相對應的’它們可以控制每個第二氣孔42的孔徑比例。 —具體來說，所述的單獨控制板80是沿排氣板41可滑動地 戈裝的，匕們可以對應地打開或關閉第二氣孔。通過控制 _ 每個單獨控制板80的位置，一位操作者可以有差異地控制每 個第一氣孔42的孔徑比例。 ☆指引構件82和83可以分別安裝在排氣板41的上端和下 端’來提供-個引導間隔（如—細槽），單獨控制板8〇的 上端和下端可以分別插入到該引導間隔中並可以在其中滑 動，讀早獨控制板80就可以自由地在排氣板41的上表面滑 動。 所述的指㈣件82和83可似相互間隔的帶狀分別設置 排氣板41的上表面和下表面，為了能夠插入到單獨控鄉ς:Ί 201108326 80的上端和下端，它們還設有―_槽，翔控做抑就是 通過凹槽安裝到排氣板41的上表面。 因此’通過㈣單獨控概_位置，暫態控制每個第 二氣孔42的孔徑比例位操作者可以能更好地暫態控制氣 體流動和流出時的均勻性’同時還能泵排出内室i中的反應氣 體和副產物等。 ' 所述的單獨控制板80不僅限於如圖4所示的形狀，它也可 以設置成開口 /關閉的門形被滑動地安裝在第二氣孔42中作為 一個共同的開口/關閉的門。 鲁 所述的陰極内襯50可以被塗上氧化鋁（Al2〇3)、氧化釔 (Y2〇3)等優良的耐腐餘和耐磨損劑。 下面將說明圖1所示結構的操作方法。 如果一種反應氣體通過氣體注射器5被注入到内室1中， RF電源7開始應用於陰極裝置1〇，那麼反應氣體將會誘導放 電，並轉變成一種等離子狀態，從而蝕刻底板表面上的特殊 薄膜。 同時，陰極内襯50使所述的反應氣體保持持續均勻的氣 體流動，於是持續地和副產物一起，如箭頭3所示地同時穿過 第一氣孔22和第二氣孔42。然後反應氣體從排氣部分8中排 出。 在此，所述的反應氣體穿過第一氣孔22，然後穿過第二 氣孔42再次被排出。因此’擋板2〇和排氣部分4〇之間形成的 一個間隔部分直到了一個緩衝作用，使内室丨中的氣體流動和 流出可以更均勻地出。 12 201108326 / 因此，通過使轉子體反狀後產纽應纽、聚合物 或顆粒物穿過完整且設有第—氣孔22和第二氣孔42的陰極内 襯50被栗排出，本發明通過在擋板2〇和排氣部分仙之間設置 間隔部分’產生緩衝作用’從而改進非均勻地排氣。此外， 本發明還可輯加麵反作用力，防止陰極_50伸出連接 到，室1上而產生的等離子閃光現象。並且本發明還能控制第 二氣孔42的孔徑_，從而暫態地控_室丨中等離子體的均 勻性。 # /為了便於朗，上述優選的實施例僅作為-個實施來進 行說明，因此它們不能限制權利要求保護的範圍，並且它們 均可以應祕某種等離子體真线理的設置，如濺射或化學 氣相沉澱(CVD)。 如上文所述’本㈣的效果是可以使底板上的等離子保 持均勻性，確保顧的侧羽性，通職反餘體穿過兩 層結構的完整陰極内襯被栗排出，減少過程錯誤，並通過防 • 止魏間產生等離子财光現象纽進處觀率。本發明還 有一個效果是可以通過使整塊絲表面上的侧率保持均勾 性’使之可以通過控制第二氣孔的孔徑比例來暫態地控制等 離子體的均勻性，從而製造出高品質的底板。 ，雖然本發明已經公開描述了某些優選的實施例，但應理 解為只要不違背和超出權利要求所規定的本發明的原理和範 ® ’本領域的技術人員就可以對其進行各種變化。 【圖式簡單說明】 下面將結合附圖進一步詳細說明本發明的上述以及其他 [S] 13 201108326 目的、特徵和優點，其中。 圖本發明所述的等離子體個裝置的側視圖； ，疋本發月個優選實施例所述的陰極内概的分解示意 圖， 圖3是本發明—個優選實施例所述的陰極内襯的結構示意 圖， 圖4疋本發另—個優選實補所賴陰極喊的部分分 解示意圖。 在&些附圖中’同樣的附圖標記代表同樣的元素、特徵 和結構。 【主要元件符號說明】 10陰極裝置 20a固定槽 20a固定槽 22第一氣孔 3箭頭 30b組合孔 40b組合孔 41排氣板 45連接板 50陰極内襯 62控制部分 7無線電頻率(RF)電源 8排氣部分 1内室 20擋板 20b組合孔 20b組合孔 25插孔 30襯墊部分 40排氣部分 40a固定槽 42第二氣孔 5氣體注射器 60控制板 63箭頭 70墊圈 201108326 80控制板 80的控制板 82指引構件 83指引構件Since the most important thing in the smoke method is to maintain the uniformity of the money on the surface of the entire floor, the uniform plasma needs to be formed in the inner chamber, and these plasmas are in contact with the entire surface of the bottom plate, thereby improving the uniformity of the remaining base plate. Prevent errors in the process. In a conventional plasma engraving device, in order to make the sub-body in the inner chamber uniform, it is necessary to install on the outer closing of the cathode device - a baffle plate with a plurality of air holes, and install under the time_ The pump discharges the part, so that it can operate to remove the part of the silk discharge by-products, such as a reaction gas in the inner chamber, a kind of polymer, a kind of particulate matter and the like. Thus, the conventional plasma can be used to ensure the uniformity of the plasma by uniformly discharging the reaction gas of the internal chamber. That is, if by-products such as a reaction gas can continuously flow out uniformly from the inner chamber, the plasma in the crucible to the center is uniformly spread on the bottom plate without being affected by the resistance generated by the reaction gas, by-products, and the like. However, the above conventional money carving device has the following problems. First, since the reaction gas, polymer or particulate matter generated in the plasma reaction is pumped through the block baffle, the reaction gas, by-products, etc. of the (4) have a uniformity. Therefore, there is a problem that the medium ionic body in the inner chamber cannot be ensured. Secondly, since the baffle cannot be effectively grounded to the inner chamber, there arises a problem that a plasma flash phenomenon occurs in which the plasma between the air holes is non-uniformly flashed. Again, since there is no control member for controlling the ratio of the pore diameters, there is such a problem that the etching rate of the bottom plate cannot be temporarily controlled by controlling the flow or outflow of gas in the inner chamber. 201108326 SUMMARY OF THE INVENTION A preferred embodiment of the present invention addresses at least the above-mentioned problems and/or disadvantages and provides at least one of the following advantages. Therefore, a preferred embodiment of the present invention is to maintain the uniformity of gas flow and outflow in the inner chamber, and to discharge the plasma reaction by the pump, the reaction or the granules, which pass through the complete cathode. The lining has a plurality of first air holes and second air holes on the two layers. Another preferred embodiment of the present invention is to improve the ground eccentric force of the cathode liner to prevent plasma flashing between the pores. Still another preferred embodiment of the present invention is to control the plasma by controlling the aperture ratio of the second air hole to ensure the uniformity of the entire surface of the bottom plate and to realize transient control by gas flow and outflow in the inner chamber. Uniformity. A plasma etching apparatus is disclosed as described in one aspect of the invention. The apparatus includes an inner chamber, a cathode assembly and a complete cathode liner. The inner chamber forms a plasma reaction interval. The cathode unit set in the inner part of the inner chamber can support a bottom plate. The complete cathode liner is provided on the two layers with a plurality of first pores and second pores spaced apart from each other to maintain uniformity of gas flow and outflow in the inner chamber, and the cathode liner is The outside is inserted into the cathode device ten, and the bottom thereof is connected to the inner surface of the inner chamber. The cathode liner comprises a baffle radially provided with a plurality of first air holes, a fixed length pad portion having an upper end connected to the inner circumference of the baffle, and a lower end disposed at the bottom end of the pad portion connected to the inner chamber And a plurality of exhaust portions of the second air holes of 201108326 are radially provided. The plurality of first air holes of the baffle are composed of a plurality of slots spaced apart from each other and spaced apart. There are several places on the inner circumference of the baffle that are screwed to the lower surface of the pad portion. The exhausting portion includes a venting plate, and the venting plate is provided with a plurality of second vent holes at regular intervals, and the slanting holes between the second venting holes and the outer direction are the same The venting portion further includes a web extending along the outer circumference of the bottom of the venting plate to the outside, the plate being screwed to the inner chamber. A control panel disposed on the surface of the exhaust plate can be slidably rotated. The control panel is provided with a plurality of control portions corresponding to the plurality of second air holes, which can simultaneously control the aperture ratio of the second air holes. The upper surface of the venting plate is provided with a plurality of spacing control plates which are slidable over the upper portion of the venting plate to control the aperture ratio of each of the second vents. The apparatus further includes a gasket that prevents the reaction gas from leaking on the bottom side surface of the connecting plate. The cathode liner is coated with Oxide (Al2〇3) and Oxidation (γ2〇3). [Embodiment] Hereinafter, preferred embodiments of the present invention will be specifically described with reference to the accompanying drawings. In order to make the following description more concise, the well-known structure and structure will be omitted in the description. A detailed description of the invention will be made in conjunction with the drawings. 1 is a side view of a plasma etching apparatus according to the present invention. As shown in Fig. 1, the plasma etching of the present invention comprises an inner chamber 201108326 1, a cathode device 10 and a cathode liner 5A. The inner chamber 1 separates a space for plasma reaction from the inside. A gas injector 5 to the reaction gas is installed in the middle of the top of the inner chamber 1. An exhaust portion 8 is provided in the middle of the bottom of the inner chamber 1 for discharging a reaction by-product such as a reaction gas, a polymer, a particulate matter or the like. Further, one side of the inner chamber 1 is also grounded to the outside, and the reaction gas in the inner chamber 1 is converted into a plasma state by a radio frequency (RF) power source 7. The cathode device 10 forms an electrode for the RF power source 7 while the branch is a wafer or a substrate (not shown), so that it is vertically disposed in the middle of the inner chamber 1. The cathode device 10 is connected to the RF power source 7 and is stably mounted on the upper surface of the bottom plate. Therefore, the RF power source 7 removes the reaction gas introduced into the inner chamber 1 by the current, converts the reaction gas into a plasma state, and then inspects the surface of the bottom plate by plasma. The cathode device 10 of φ may include an electrostatic chuck (not shown) for stably fixing the bottom plate, and may also be provided with a gas pipe (not shown), such as helium (He). Loop back in the root gas tube to cool the bottom plate. The electrostatic chuck is a device that sucks a target by forming an electrical attraction between the electrode surface and the target. The reaction gas passes through the gas injector 5 on the same line as the center of the cathode device 1 to enter the inside of the inner chamber 1, so that plasma can be uniformly formed on the surface of the bottom plate. 201108326 Therefore, the 'RF power source 7 converts the reaction gas in the inner chamber 1 into a plasma state' and then reacts with the surface of the bottom plate' selectively etches the bottom plate, and finally flows out through the exhaust portion 8 at the bottom of the inner chamber 1 to the outside. The inside of the cathode 50 is inserted from the outside and mounted in the cathode device 1〇. The cathode liner 50 will be further described below in relation to Figures 2 and 3. Fig. 2 is an exploded perspective view of a cathode liner 5〇 according to a preferred embodiment of the present invention. Fig. 3 is a schematic view showing the structure of a cathode liner 5〇 according to a preferred embodiment of the present invention. The cathode liner 50 is provided on the two layers with a plurality of first pores 22 and second pores 42 which are spaced apart from each other to maintain uniformity of gas flow and outflow of the inner chamber. The cathode liner 5A includes a baffle 2, a lining portion 30 and an exhaust portion 40. The baffle 20 allows the plasma reaction gas to remain in the inner chamber 1 for a fixed period of time before discharging the plasma reaction gas. As shown, the baffle 20 can be attached to the upper surface of the circular pad portion 30 after installation and is located on the outer circumferential surface of the upper end of the cathode device 1 . Therefore, the inner circumferential surface of the baffle 20 is disposed corresponding to the outer circumferential surface 疋 of the cathode device 1〇. The outer circumferential surface of the baffle 20 is disposed corresponding to the inner circumferential surface 疋 of the inner chamber 1. Therefore, the shutter 2 is vertically installed at a space portion between the outer circumferential surface of the cathode device 1A and the inner circumferential surface of the inner chamber 1. The baffle 20 is shaped as a ring having a fixed thickness. An insertion hole 25 is formed in the center of the shutter 2 through the shutter, and the cathode device 10 can be inserted into this insertion hole 25. 201108326 The outer circumference of the baffle 20 is not limited to a circular shape, and it may be a shape such as a rectangle or the like determined according to the shape of the inner circumferential surface of the inner chamber 1. Therefore, the outer circumferential surface of the baffle 20 is in contact with the inner circumferential surface of the inner chamber ,, and the inner circumferential surface of the insertion hole 25 is in contact with the outer circumferential surface of the cathode device 10. Therefore, the reaction space in the inner chamber 1 is divided into an upper portion and a lower portion. A plurality of combination holes 2 are provided on the carrier 20 at intervals along the circumference of the insertion hole 25. Here, the fixing grooves 2a can be joined and fixed to the upper surface of the pad portion 30 by using the combination holes 20b. The _ 帛-air hole 22 is disposed in the baffle 2 。. The first air holes 22 through which the reaction gas partially passes are grooves having a fixed length which are radially arranged at fixed intervals. The first air holes 22 are not limited to being provided in a groove shape, but may be provided in other shapes suitable for plasma environmental conditions. The pad portion 30 is inserted into the cathode device 1 from the outside, and this portion is a circular shape in which both upper and lower ends are open. • The pad portion 30 is provided with a contact surface corresponding to the outer circumferential surface of the cathode device 10. Further, the shaft (the combined surface of the upper surface of the pad portion 3Q and the baffle 20 is provided with a large amount of money b. Therefore, the lining portion 30 passes through the fixing groove 20a and the lower circumferential surface of the upper cover 15 of the baffle plate 2 Contact connection. The arranging portion 4〇 is disposed under the pad. The above-mentioned part 4G allows the counter-sense and the sub-scale to wear the plate 2, and finally discharges to the inner chamber 1 Exhaust portion 8. The exhaust portion includes a venting plate 41 extending from the bottom end of the lining portion 30 and an outwardly extending surface on the bottom end of the bottom end of the 201108326 The connecting plate 45 = the exhaust plate 41 is inclined outward at a fixed angle to the outer side of the lower end of the pad portion 3 . The second air holes 42 are all disposed at four (4) intervals. The second air hole 42 is not limited to have a shape as shown in the drawing, and it may be provided in various shapes such as a long hole shape or the like. The plurality of connecting plates 45 extend from the outer circumference of the lower end of the exhaust plate 41 in a vertical direction by a fixed distance. These connecting plates 45 are provided with a plurality of combined holes 4〇b which are provided in combination with the fixing grooves 4〇a for fixing the inner chamber 1. Thus, since the fixing groove 40a stably couples the connecting plate 45 to the inner chamber 1, and additionally adds a ground reaction force, the cathode inner liner 50 can prevent the conventional plasma etching device +, and the baffle plate is not stabilized. Grounding causes the plasma flash phenomenon that occurs in the air holes. A gasket 70 is installed between the connecting plate 45 and the inner chamber 1 to prevent unnecessary leakage of the reaction gas. The gasket 70 can be a toroidal metal ring. Further, on the outside of the exhaust plate 41, a control panel 60 may be provided corresponding to the exhaust plate 41 so as to be slidable. The control board 60 is rotatably provided along the exhaust plate 41, and the control board 60 is inserted from the outside into the pad portion 30 and mounted on the upper surface of the exhaust plate μ. The control board 60 is provided in a ring shape corresponding to the exhaust plate 41. The control panel 60 is provided with a plurality of control portions 62 corresponding to the second air holes 42 on the exhaust plate 41 at regular intervals. Therefore, as shown in Fig. 3, if the control panel 60 is rotated, the overlapping area with the control portion 62 of the 201108326 can be adjusted, so that the aperture ratio of each of the second air holes 42 on the exhaust plate 41 can be simultaneously controlled. That is, the one-bit operator rotates the control panel 60 at an appropriate angle according to the indication of the arrow 63, so that the aperture ratio of the second air hole 42 can be controlled to select conditions, while the pump is exhausted, and the inner chamber is temporarily controlled. The gas in 1 flows and flows out. Figure 4 shows a cathode liner 50 in accordance with another preferred embodiment of the present invention. The structure of this embodiment is the same as that of the above embodiment except for the structure of the control board. Therefore, only an improved structure will be described below. As shown, a plurality of individual control boards 80 are mounted on the upper surface of the exhaust plate 41. The plurality of individual control panels 80 are corresponding to the number of second air holes 42 on the exhaust plate 41. They can control the aperture ratio of each of the second air holes 42. Specifically, the individual control panels 80 are slidably mounted along the venting plate 41, which can open or close the second vents accordingly. By controlling the position of each individual control board 80, an operator can differentially control the aperture ratio of each of the first air holes 42. ☆ Guide members 82 and 83 may be respectively mounted at the upper end and the lower end of the exhaust plate 41 to provide a guide interval (e.g., a fine groove) into which the upper and lower ends of the individual control plates 8〇 may be respectively inserted and It is possible to slide therein, and the control board 80 can be freely slid on the upper surface of the exhaust plate 41. The finger (four) members 82 and 83 may be provided with the upper surface and the lower surface of the exhaust plate 41, respectively, in a strip shape spaced apart from each other, and are also provided for being inserted into the upper end and the lower end of the separate control home: Ί 201108326 80 The __slot is mounted to the upper surface of the venting plate 41 by a groove. Therefore, by the (four) separate control _ position, the operator can control the aperture ratio of each second air hole 42 in a transient manner, and the operator can better control the uniformity of gas flow and outflow at the same time 'while also pumping the inner chamber i Reaction gases and by-products, etc. The individual control panel 80 is not limited to the shape shown in Fig. 4, but it may be arranged such that the open/closed gate shape is slidably mounted in the second air hole 42 as a common open/closed door. The cathode liner 50 described by Lu may be coated with an excellent anti-corrosion and anti-wear agent such as alumina (Al2〇3) or yttrium oxide (Y2〇3). The operation of the structure shown in Fig. 1 will be explained below. If a reactive gas is injected into the inner chamber 1 through the gas injector 5, and the RF power source 7 is applied to the cathode device 1 , the reaction gas will induce a discharge and be converted into a plasma state, thereby etching a special film on the surface of the bottom plate. . At the same time, the cathode liner 50 maintains the reaction gas for a continuous and uniform gas flow, and thus continuously passes through the first pores 22 and the second pores 42 together with the by-products as indicated by the arrow 3. The reaction gas is then discharged from the exhaust portion 8. Here, the reaction gas passes through the first air hole 22 and is then discharged again through the second air hole 42. Therefore, a space portion formed between the baffle plate 2 and the exhaust portion 4A is until a buffering action, so that the gas flow and the outflow in the inner chamber enthalpy can be more uniformly discharged. 12 201108326 / Therefore, the present invention is passed through by blocking the rotor body after the rotor has been produced, the polymer or particulate matter is passed through the cathode lining 50 which is completely provided with the first air hole 22 and the second air hole 42 A spacing portion 'generating a cushioning effect' is provided between the plate 2 〇 and the exhaust portion to improve non-uniform venting. In addition, the present invention can also add a surface reaction force to prevent the cathode _50 from sticking out to the plasma flash phenomenon generated by the chamber 1. Moreover, the present invention can also control the aperture _ of the second air hole 42, thereby transiently controlling the uniformity of the plasma in the chamber. # / 。 For convenience, the above-described preferred embodiments are described only as an implementation, and therefore they are not intended to limit the scope of the claims, and they can all be set in a certain plasma true line setting, such as sputtering or Chemical vapor deposition (CVD). As described above, the effect of this (four) is to maintain the uniformity of the plasma on the bottom plate, to ensure the side feathering of the mother, and to pass through the two-layer structure of the complete cathode lining of the chestnut to reduce the process error. And through the prevention and control of the generation of plasma fiscal phenomenon between the Wei and New York. Still another effect of the present invention is to maintain a high quality by temporarily controlling the uniformity of the plasma by controlling the ratio of the apertures of the second pores by maintaining the side rate on the surface of the entire filament. The bottom plate. While the invention has been described with respect to the preferred embodiments of the present invention, it is understood that various modifications may be made by those skilled in the art without departing from the scope of the invention. BRIEF DESCRIPTION OF THE DRAWINGS The above and other objects, features and advantages of the present invention will be further described in detail with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 3 is a side view of a cathode device according to a preferred embodiment of the present invention, and FIG. 3 is a cathode lining of the preferred embodiment of the present invention. Schematic diagram of the structure, Fig. 4 is a partially exploded schematic view of the cathode of the present invention. The same reference numerals are used to refer to the same elements, features and structures. [Main component symbol description] 10 cathode device 20a fixing groove 20a fixing groove 22 first air hole 3 arrow 30b combination hole 40b combination hole 41 exhaust plate 45 connection plate 50 cathode lining 62 control portion 7 radio frequency (RF) power supply 8 rows Gas portion 1 inner chamber 20 baffle 20b combined hole 20b combined hole 25 jack 30 pad portion 40 exhaust portion 40a fixing groove 42 second air hole 5 gas injector 60 control plate 63 arrow 70 washer 201108326 80 control panel 80 control panel 82 guiding member 83 guiding member
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