201104825 六、發明說明： 【發明所屬之技術領域】 本發明是有關於一種半導體封裝結構，且特別是有關 於一種具溫度感測之封裝結構。 【先前技術】 隨著半導體封裝結構之晶片中的電子元件越密集或運 作越頻繁，其内部所產生的熱量也越多，溫度自然隨之升 • 高。當溫度過高時，晶片中的電子元件可能會受損或失效， 因而影響晶片的正常運作或降低運作效能。 請參照第1 II ’係習知技術中一種封裝結構的 圖。封裝結構100包含一基板120、一晶片lu、一熱^電 阻(Thermistor)112及一封膠113。晶片U1位於基板 之第一面121上，且其背面面對基板120。晶片U1 透過數個銲線160電性連接基板12〇中的數個導線124， 再電性連接至基板120之第二面122的數個銲墊132及金 • 屬球14卜熱敏電阻112位於基板120之第一面121上， 並設置於晶片111之外侧。熱敏電阻H2透過二接墊13〇 電性連接二導線123，再電性連接至二銲墊13ι及二金屬 球140，用以量測封裝構造1〇〇之溫度。封膠113覆蓋基 板120、晶片111、熱敏電阻112及此些銲線160。 封裝結構100之發熱源為晶片m，尤其是晶片U1 之主動面150。由於晶片hi之運作效能對於溫度是非常敏 感的，因此量測晶片111之溫度是相當重要的。習知技術 之封裝構造100中，熱敏電阻112的位置並未緊鄰晶片 201104825 ill ’所以無法直接地量測晶片ill之溫度，以致熱敏電阻 112所量測之晶片111的溫度較不準確’且其靈敏度隨著熱 敏電阻112與晶片111之距離的增加而降低。 請參照第第2圖，係習知技術中另一種封裝結構的剖 面圖。封裝結構200包含一基板220、一晶片211、一熱敏 電阻212及一封膠213。晶片211位於基板220之第一面 221上，並透過數個銲線260電性連接數個導線224，再電 性連接至基板220之第二面222的數個銲墊232及數個金 屬球241。熱敏電阻212設置於基板220之凹槽270中， 並面對晶片211之背面25卜熱敏電阻212透過二接塾230 電性連接二導線223，再電性連接至二銲墊231及二金屬 球240，用以量測晶片211之背面251的溫度。封膠213 覆蓋晶片211、基板220及此些銲線260。 封裝結構200之發熱源為晶片211，尤其是晶片211 之主動面250的溫度通常遠高於背面251的溫度。由於晶 片211之運作效能對於溫度是非常敏感的，因此量測晶片 211之主動面250的溫度是相當重要的β習知技術之封裝 構造200中’熱敏電阻212的位置遠離晶片211之主動面 250 ’以致無法直接地量測主動面250的溫度，故熱敏電阻 212所篁測之晶片211的溫度會有落差而造成誤判。 【發明内容】 本，明之目的’係提供一種具溫度感測之封裝結構， 可直接罝測晶片之主動面或兩晶片之間的溫度。 依照本發明之一實施態樣，具溫度感測之封裝結構包 201104825 s基板、一晶片、至少一溫度感測元件及一封膠。晶片 位於^板上，並電性連接基板。晶片具有相對之一主動面 及责面，背面面對基板。溫度感測元件位於主動面上， 用以里測晶片之主動面的溫度。封膠覆蓋基板、晶片及溫 度感測凡件。 依照本發明另一實施態樣，具溫度感測之封裝結構包 含一基板、一第一晶片、一第二晶片、至少一第一溫度感 測元件及一封膠。第一晶片位於基板上，並電性連接基板。 第一曰曰片位於第一晶片之上方，並電性連接基板。第一溫 度感測元件位於第一晶片與第二晶片之間，用以量測第一 晶片與第二晶片之間的溫度。封膠覆蓋基板、第一晶片、 第二晶片及第一溫度感測元件。 依照本發明又一實施態樣，具溫度感測之封裝結構包 含一基板、一第一晶片、至少一第一溫度感測元件及—封 膠。第一晶片位於基板上，並透過數個導電元件（如銲球) 電性連接基板。第一晶片具有相對之一第一主動面及一第 一背面，第一主動面面對基板。第一溫度感測元件位於第 一主動面與基板之間，用以量測第一晶片之第一主動面的 溫度。封膠覆蓋基板、第一晶片、此些導電元件及第一溫 度感測元件。 ’皿 【實施方式】 為了使本發明之敘述更加詳盡與完備，可參照所附之 圖式及以下各種實施例’圖式中相同之號碼代表相同或相 似之元件。另一方面，幕所週知的元件並未描述於實施例 201104825 中，以避免對本發明造成不必要的限制。 請參照第3圖’係依照本發明具溫度感測之封裝結構 之第一實施例的剖面圖。如圖所示，封裝結構300包含一 基板310、一晶片320、至少一溫度感測元件330及一封膠 390。晶片320位於基板310上，並電性連接基板310。晶 片320具有相對之一主動面321及一背面322，背面322 面對基板310。 溫度感測元件330位於晶片320之主動面321上，並 透過至少一第一銲線340電性連接基板310，用以量測主 動面321之溫度。實作上，第一銲線340可為二個，溫度 感測元件330可為一熱敏電阻、一熱電偶（Thermal Couple)、一溫度感測晶片或一溫度感測器。封膠390覆蓋 基板310、晶片320及溫度感測元件330。 封裝結構300可包含一載板350，载板350設置於晶 片320之主動面322上，並承載溫度感測元件330。而且’ 載板350可具有至少一接墊351，接墊351之兩端分別電 性連接溫度感測元件330與第一銲線340。 基板310具有相對之一第一面311與一第二面312、 至少一第一銲墊370及至少一第一導線360。第一銲線340 電性連接基板310之第一面311，第一銲墊370設置於第 二面312，第一導線360設置於基板31〇中，並將第一銲 線340電性連接至第一銲墊370。 封裝結構300可包含至少一第一金屬球380，第一金 屬球380設置於第一銲墊37〇上。第一金屬球38〇或第一 銲塾370可作為溫度感測元件330的量測點。 201104825 基板310可具有數個第二銲墊371及數個第二導線 36卜晶片320透過數個第二銲線341電性連接基板310之 第一面311，此些第二銲墊371設置於基板310之第二面 312，此些第二導線361設置於基板310中，並將此些第二 銲線341電性連接至此些第二銲墊371。 另外，封裝結構300可包含數個第二金屬球381，此 些第二金屬球381分別設置於此些第二銲墊371上。封裝 結構300亦可包含一黏合層391，黏合層391設置於晶片 320之背面322與基板310之間，用以貼合晶片320與基 板310。封膠390更覆蓋載板350、第一銲線340、此些第 二銲線341及黏合層391。 請參照第4圖，係依照本發明具溫度感測之封裝結構 之第二實施例的剖面圖。如圖所示，封裝結構400包含一 基板410、一第一晶片420、一第二晶片423、至少一第一 溫度感測元件430及一封膠490。第一晶片420位於基板 410上，並電性連接基板410。第二晶片423位於第一晶片 420之上方，並電性連接基板410。 第一溫度感測元件430位於第一晶片420與第二晶片 423之間，並透過至少一第一銲線440電性連接基板410， 用以量測第一晶片420與第二晶片423之間的溫度。實作 上’第一銲線440可為二個，第一溫度感測元件430可為 一熱敏電阻、一熱電偶、一溫度感測晶片或一溫度感測器。 封膠490覆蓋基板410、第一晶片420、第二晶片423及第 一溫度感測元件430。 第一晶片420具有相對之一第一主動面421及一第一 201104825 背面422，第一背面422面對基板410。封散結構4〇〇可包 含一第一載板450，第一載板450設置於第一主動面421 上，並承載第一溫度感測元件430。 第一載板450具有至少一第一接墊451，第一接墊451 之兩端分別電性連接第一溫度感測元件430與第一銲線 440。同時’第一載板450可具有至少一連接線452，連接 線452之兩端分別電性連接第一接墊451與第一銲線440。 實作上，連接線452與第一接墊451可為一體成型或互相 接合而成，亦可整合於第一接墊451中。 基板410具有相對之一第一面411與一第二面412、 至少一第一銲墊470及至少一第一導線460。第一銲線440 電性連接基板410之第一面411，第一銲塾470設置於基 板410之第二面412，第一導線460設置於基板410中， 並將第一銲線440電性連接至第一薛墊470。 另外’封裝結構400可包含至少一第一金屬球48〇， 第一金屬球480設置於第一銲墊470上。第一金屬球48〇 或第一銲墊470可作為第一溫度感測元件430的量測點。 封裝結構400可包含至少一第二溫度感測元件431， 第二溫度感測元件431位於第二晶片423之上，並透過至 少一第二銲線441電性連接基板41〇，用以量測第二主動 面424之溫度。實作上，第二銲線441可為二個，第二溫 度感測元件431可為一熱敏電阻、一熱電偶、一溫度感測 晶片或一溫度感測器。 第二晶片4M具有相對之一第二主動面4之4及一第二 背面425。第二溫度感測元件431位於第二主動面424之 201104825 上，第一溫度感測元件430位於第二背面425之下。 封裝結構400可包含一第二載板453，第二載板453 設置於第二主動面424上，並承載第二溫度感測元件431。 第二載板453具有至少一第二接墊454，第二接塾454之 兩端分別電性連接第二溫度感測元件431與第二銲線441。 基板410具有至少一第二銲墊471及一第二導線461。 第二銲線441電性連接基板410之第一面411，第二銲墊 471設置於基板410之第二面412,第二導線461設置於基 板410中，並將第二銲線441電性連接至第二銲墊471。 封裝結構400可包含至少一第二金屬球481，第二金 屬球481設置於第二銲墊471上。第二金屬球481或第二 銲墊471可作為第二溫度感測元件431的量測點。 封裝結構400包含一黏合層491，黏合層491設置於 第一晶片420與第二晶片423之間，用以黏合第一晶片420 與第二晶片423 ’並覆蓋第一溫度感測元件430及第一載 板450。封膠490覆蓋第二溫度感測元件431及黏合層491。 第一晶片420可藉由一打線接合方式或一覆晶接合方 式電性連接基板410 ’第二晶片423則藉由打線接合方式 電性連接基板410。如第4圖所示，第一晶片420可透過 數個銲線442或銲球（圖未式）電性連接基板410之第一面 411。基板410具有數個銲墊472及數個導線462。此些銲 墊472設置於基板410之第二面412，此些導線462設置 於基板410中，並將此些鮮線442電性連接至此些銲墊 472，且此些銲墊472上可設置數個金屬球482。 相似地，第二晶片423可透過數個銲線443電性連接 201104825 基板410之第一面411。基板410具有數個銲墊473及導 線463。此些銲墊473設置於基板410之第二面412，此些 導線463設置於基板410中，並將此些銲線442電性連接 至此些銲墊473’且此些銲墊473上可設置數個金屬球483。 請參照第5圖’係依照本發明具溫度感測之封裝結構 之第三實施例的剖面圖。如圖所示，封裴結構50〇包含一 基板510、一第一晶片520、至少一第一溫度感測元件530 及一封膠590。第一晶片520位於基板510之上方，並透 過數個導電元件540電性連接基板510,亦即第一晶片520 以覆晶接合方式電性連接基板510。每一導電元件540可 為一知球、* 金屬球、一金球、*~~錫球、· 一凸塊、一金属 塊、一接點或一導電體。 第一晶片520具有相對之一第一主動面521及一第一 背面522，第一主動面521面對基板510。第一溫度感測元 件530位於第一主動面521與基板510之間，用以量測第 一主動面521之溫度。實作上，第一溫度感測元件530為 一熱敏電阻、一熱電偶、一溫度感測晶片或一溫度感測器。 封膠590覆蓋基板510、第一晶片520、此些導電元件54〇 及第一溫度感測元件530。 基板510具有相對之一第一面511與一第二面512、 至少一第一接墊550、至少一第一銲墊570及至少一第〜 導線560。第一溫度感測元件530位於第一面511上，第 一接墊550設置於第一面511 ’並電性連接第一溫度感測 元件530。第一銲墊570設置於第二面512，第一導線56〇 設置於基板510中’並透過第一接墊550將第一溫度感剛 201104825 元件530電性連接至第一銲墊570。 封裝結構500可包含至少一第一金屬球580，第一金 屬球580設置於第一銲墊570上。第一金屬球580或第一 鏵墊570可作為第一溫度感測元件53〇的量測點。 第一晶片520可包含數個銲墊523，此些銲墊523設 置於第一主動面521，並電性連接此些導電元件540。基板 510具有數個銲墊571、數個導線561及數個銲墊572。此 些銲墊571設置於第一面511，並電性連接此些導電元件 540。此些銲墊572設置於第二面512，此些導線561設置 於基板510中，並透過此些銲墊571將導電元件540電性 連接至銲墊572,且此些銲墊572上可設置數個金屬球581。 請參照第6圖，係依照本發明具溫度感測之封裝結構 之第四實施例的剖面圖。應瞭解到，於第5圖及第6圖中， 相同之號碼代表相同或相似之元件，至於在第三實施例中 已具體揭露之外形、結構與裝置，在第四實施例中則不再 重複贅述之。 如第6圖所示，封裝結構500更包含至少一第二溫度 感測元件531 ’第二溫度感測元件531位於第一晶片520 之第一背面522上，並透過至少一第一銲線541電性連接 基板510 ’用以量測第一背面522之溫度。實作上，第一 銲線541可為二個，第二溫度感測元件531可為一熱敏電 阻、一熱電偶或一溫度感測晶片或一溫度感測器。 封裝結構500可包含一第一載板551，第一載板551 設置於第一背面522上，並承載第二溫度感測元件531。 第一載板551具有至少一第二接墊552，第二接墊552之 201104825 兩端分別電性連接第二溫度感測元件531與第一銲線541。 基板510具有至少一第二銲墊573及一第二導線562。 第一銲線541電性連接基板510之第一面511，第二銲墊 573設置於基板510之第二面512,第二導線562設置於基 板510中’並將第一銲線541電性連接至第二銲墊573。 封裝結構500可包含至少一第二金屬球582，第二金 屬球582設置於第二銲墊573上。第二金屬球582或第二 銲墊573可作為第二溫度感測元件531的量測點。 _ 封裝結構500可包含一第二晶片524,第二晶片524 位於第一晶片520之上方，並電性連接基板51〇。第二溫 度感測元件531位於第二晶片524之第二背面526與第一 晶片520之間，用以量測第一晶片52〇與第二晶片524之 間的溫度。 第二晶片524藉由打線接合方式電性連接基板51〇〇 亦即，第二晶片524可透過數個銲線543電性連接基板51〇 之第一面511。基板510具有數個銲墊575及數個導線 φ 564。此些銲墊575設置於基板510之第二面512，此些導 線564設置於基板510中，並將此些銲線543電性連接至 此些銲墊575，且此些銲墊575上可設置數個金屬球584。 封裝結構500可包含至少一第三溫度感測元件532, 第三溫度感測元件532位於第二晶片524上，並透過至少 一第一銲線542電性連接基板510。實作上，第二銲線542 可為二個，第三溫度感測元件532可為一熱敏電阻、一熱 電偶、一溫度感測晶片或一溫度感測器。 弟一晶片524具有相對之一第二主動面525及一第二 12 201104825 背面526。第三溫度感測元件532位於第二主動面525上， 用以；g：測第二主動面525之溫度。 封裝結構500可包含一第二載板553，第二載板553 設置於第二主動面525上，並承載第三溫度感測元件532。 第二載板553具有至少一第三接墊554，第三接墊554之 兩端分別電性連接第三溫度感測元件532與第二銲線 542，第二銲線542電性連接基板510之第一面511。基板 510可具有至少一第三導線563及一第三銲墊574。第三銲 墊574設置於基板510之第二面512，第三導線563設置 於基板510中，並將第二銲線542電性連接至第三銲墊574。 封裝結構500可包含至少一第三金屬球583，第三金 屬球583設置於第三銲墊574上。第三金屬球583或第三 銲墊574可作為第三溫度感測元件532的量測點。 封裝結構500可包含一黏合層591，其設置於第一晶 片520與第二晶片524之間，用以貼合第一晶片520與第 二晶片524,並覆蓋第二溫度感測元件531及第一載板551。 封膠590可覆蓋基板51〇、第一晶片52〇、第二晶片 524、第一溫度感測元件53〇、第二溫度感測元件531及第 三溫度感測元件532等。 應瞭解到’本發明各實施例所述之基板亦可為一封裝 基板、一陶瓷基板、一玻璃基板、一印刷電路板、一積層 板、一璺層板、一載板或一承載件等。各個晶片可為任何 種類或功能的晶片。各個載板可為一半導體晶片、一載體、 一承載件、一基板、一中介體(Imerp〇ser)或一印刷電路板 等。各個銲墊可為一金屬墊、一鋁墊、一接墊、一接點、 13 201104825 2指、：L腳、—接腳或一導線架等。各個接墊可為-知墊、一金屬墊、—鋁墊、一接點、一引指或 各個銲線可為一金屬结.. 等 礬绩策夂“ ϊ屬線 線、一銅線、一連接線或- 導線等。各個金屬球可兔—Αθ I»， . 碉坏7為一知球、一金球、一錫球、一凸 二、一導電體或-連接元件等。各個 ' m ， 、" ’，、、一％氧樹脂、一矽膠、一熱固性塑膠、一 聚醯胺類或一聚笨二甲基類等。 定本：實施方式揭露如上，然其並非用以限 範圍内，♦可作久離本發明之精神和 圍當視後附之申請專利範圍所界定者為準。 保錄 【圖式簡單說明】 第1圖係習知技術中一種封裳結構的剖面圖。 第2圖係習知技術中另一種封裝結構的剖面圖。 第3 ® 財發㈣溫度感測之職結構之 實施例的剖面圖。 第4目係依照本發明具溫度感敎封裝結構之 實施例的剖面圖。 第5圖係依照本發明具溫度感測之封裝結 實施例的剖面圖。 再&弟一 第6圖係依照本發明具溫 實施例的剖面圖。 κ㈣、、、口構之第四 【主要元件符號說明】 201104825201104825 VI. Description of the Invention: [Technical Field] The present invention relates to a semiconductor package structure, and more particularly to a package structure having temperature sensing. [Prior Art] As the electronic components in the wafer of the semiconductor package structure are denser or more frequently operated, the amount of heat generated inside the wafer is increased, and the temperature naturally rises. When the temperature is too high, the electronic components in the wafer may be damaged or fail, thereby affecting the normal operation of the wafer or reducing the operational efficiency. Please refer to the figure of a package structure in the 1st II' prior art. The package structure 100 includes a substrate 120, a wafer lu, a thermal resistor 112, and an adhesive 113. The wafer U1 is located on the first side 121 of the substrate with its back facing the substrate 120. The wafer U1 is electrically connected to the plurality of wires 124 of the substrate 12 through a plurality of bonding wires 160, and is electrically connected to the plurality of pads 132 of the second surface 122 of the substrate 120 and the gold ball 14 thermistor 112. It is located on the first surface 121 of the substrate 120 and is disposed on the outer side of the wafer 111. The thermistor H2 is electrically connected to the two wires 123 through the two pads 13 and electrically connected to the second pads 131 and the two metal balls 140 for measuring the temperature of the package structure. The sealant 113 covers the substrate 120, the wafer 111, the thermistor 112, and the bonding wires 160. The heat source of the package structure 100 is the wafer m, especially the active surface 150 of the wafer U1. Since the operational efficiency of the wafer hi is very sensitive to temperature, it is important to measure the temperature of the wafer 111. In the package structure 100 of the prior art, the position of the thermistor 112 is not in close proximity to the wafer 201104825 ill 'so the temperature of the wafer ill cannot be directly measured, so that the temperature of the wafer 111 measured by the thermistor 112 is less accurate' And its sensitivity decreases as the distance between the thermistor 112 and the wafer 111 increases. Referring to Fig. 2, there is shown a cross-sectional view of another package structure in the prior art. The package structure 200 includes a substrate 220, a wafer 211, a thermistor 212, and an adhesive 213. The wafer 211 is located on the first surface 221 of the substrate 220, and is electrically connected to the plurality of wires 224 through the plurality of bonding wires 260, and is electrically connected to the plurality of pads 232 and the plurality of metal balls of the second surface 222 of the substrate 220. 241. The thermistor 212 is disposed in the recess 270 of the substrate 220, and faces the back surface 25 of the wafer 211. The thermistor 212 is electrically connected to the two wires 223 through the two ports 230, and is electrically connected to the two pads 231 and two. The metal ball 240 is used to measure the temperature of the back surface 251 of the wafer 211. The sealant 213 covers the wafer 211, the substrate 220, and the bonding wires 260. The heat source of the package structure 200 is the wafer 211. In particular, the temperature of the active surface 250 of the wafer 211 is generally much higher than the temperature of the back surface 251. Since the operational efficiency of the wafer 211 is very sensitive to temperature, it is quite important to measure the temperature of the active surface 250 of the wafer 211. In the package structure 200 of the prior art, the position of the thermistor 212 is far from the active surface of the wafer 211. 250 ' so that the temperature of the active surface 250 cannot be directly measured, so that the temperature of the wafer 211 measured by the thermistor 212 may have a drop and cause a misjudgment. SUMMARY OF THE INVENTION The present invention provides a temperature sensing package structure for directly measuring the active surface of a wafer or the temperature between two wafers. According to an embodiment of the present invention, a temperature sensing package structure includes a 201104825 s substrate, a wafer, at least one temperature sensing element, and a glue. The wafer is located on the board and electrically connected to the substrate. The wafer has a pair of active faces and faces, and the back faces the substrate. The temperature sensing element is located on the active surface to measure the temperature of the active surface of the wafer. The sealant covers the substrate, the wafer, and the temperature sensing component. According to another embodiment of the present invention, a temperature sensing package structure includes a substrate, a first wafer, a second wafer, at least a first temperature sensing element, and a glue. The first wafer is located on the substrate and electrically connected to the substrate. The first die is located above the first wafer and electrically connected to the substrate. A first temperature sensing element is positioned between the first wafer and the second wafer for measuring the temperature between the first wafer and the second wafer. The sealant covers the substrate, the first wafer, the second wafer, and the first temperature sensing element. According to still another embodiment of the present invention, a temperature sensing package structure includes a substrate, a first wafer, at least a first temperature sensing element, and a sealant. The first wafer is located on the substrate and electrically connected to the substrate through a plurality of conductive elements (such as solder balls). The first wafer has a first active surface and a first back surface, the first active surface facing the substrate. The first temperature sensing element is located between the first active surface and the substrate for measuring the temperature of the first active surface of the first wafer. The encapsulant covers the substrate, the first wafer, the conductive elements, and the first temperature sensing element. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS In order to make the description of the present invention more complete and complete, the same reference numerals will be used to refer to the same or equivalent elements in the drawings. On the other hand, elements well known in the art are not described in the embodiment 201104825 to avoid unnecessarily limiting the invention. Referring to Figure 3, there is shown a cross-sectional view of a first embodiment of a package having temperature sensing in accordance with the present invention. As shown, the package structure 300 includes a substrate 310, a wafer 320, at least one temperature sensing element 330, and a glue 390. The wafer 320 is located on the substrate 310 and electrically connected to the substrate 310. The wafer 320 has a pair of active faces 321 and a back face 322, and the back face 322 faces the substrate 310. The temperature sensing component 330 is located on the active surface 321 of the wafer 320 and electrically connected to the substrate 310 through at least one first bonding wire 340 for measuring the temperature of the active surface 321 . In practice, the first bonding wires 340 can be two. The temperature sensing component 330 can be a thermistor, a thermocouple, a temperature sensing chip or a temperature sensor. The sealant 390 covers the substrate 310, the wafer 320, and the temperature sensing element 330. The package structure 300 can include a carrier 350 disposed on the active surface 322 of the wafer 320 and carrying the temperature sensing component 330. The carrier plate 350 can have at least one pad 351. The two ends of the pad 351 are electrically connected to the temperature sensing component 330 and the first bonding wire 340, respectively. The substrate 310 has a first surface 311 and a second surface 312, at least one first pad 370 and at least one first wire 360. The first bonding wire 340 is electrically connected to the first surface 311 of the substrate 310. The first bonding pad 370 is disposed on the second surface 312. The first wire 360 is disposed in the substrate 31 and electrically connects the first bonding wire 340 to the first bonding wire 340. First pad 370. The package structure 300 can include at least one first metal ball 380 disposed on the first pad 37A. The first metal ball 38 or the first pad 370 can serve as a measurement point for the temperature sensing element 330. The substrate 310 may have a plurality of second pads 371 and a plurality of second wires 36. The chip 320 is electrically connected to the first surface 311 of the substrate 310 through a plurality of second bonding wires 341. The second pads 371 are disposed on the substrate The second surface 312 of the substrate 310 is disposed in the substrate 310, and the second bonding wires 341 are electrically connected to the second pads 371. In addition, the package structure 300 may include a plurality of second metal balls 381, which are respectively disposed on the second pads 371. The package structure 300 can also include an adhesive layer 391 disposed between the back surface 322 of the wafer 320 and the substrate 310 for bonding the wafer 320 and the substrate 310. The sealant 390 further covers the carrier 350, the first bonding wire 340, the second bonding wires 341, and the bonding layer 391. Referring to Figure 4, there is shown a cross-sectional view of a second embodiment of a temperature sensing package structure in accordance with the present invention. As shown, the package structure 400 includes a substrate 410, a first wafer 420, a second wafer 423, at least a first temperature sensing component 430, and an adhesive 490. The first wafer 420 is located on the substrate 410 and electrically connected to the substrate 410. The second wafer 423 is located above the first wafer 420 and electrically connected to the substrate 410. The first temperature sensing element 430 is located between the first wafer 420 and the second wafer 423, and is electrically connected to the substrate 410 through the at least one first bonding wire 440 for measuring between the first wafer 420 and the second wafer 423. temperature. In practice, the first bonding wire 440 can be two. The first temperature sensing component 430 can be a thermistor, a thermocouple, a temperature sensing chip or a temperature sensor. The sealant 490 covers the substrate 410, the first wafer 420, the second wafer 423, and the first temperature sensing element 430. The first wafer 420 has a first first active surface 421 and a first 201104825 back surface 422, and the first back surface 422 faces the substrate 410. The first structure 4 is disposed on the first active surface 421 and carries the first temperature sensing element 430. The first carrier 450 has at least one first pad 451. The two ends of the first pad 451 are electrically connected to the first temperature sensing component 430 and the first bonding wire 440, respectively. At the same time, the first carrier 450 may have at least one connecting wire 452. The two ends of the connecting wire 452 are electrically connected to the first pad 451 and the first bonding wire 440, respectively. In practice, the connecting wire 452 and the first pad 451 may be integrally formed or joined to each other, or may be integrated into the first pad 451. The substrate 410 has a first surface 411 and a second surface 412, at least one first pad 470 and at least one first wire 460. The first bonding wire 440 is electrically connected to the first surface 411 of the substrate 410. The first bonding wire 470 is disposed on the second surface 412 of the substrate 410. The first wire 460 is disposed in the substrate 410, and the first bonding wire 440 is electrically connected. Connected to the first Xue mat 470. In addition, the package structure 400 may include at least one first metal ball 48, and the first metal ball 480 is disposed on the first pad 470. The first metal ball 48A or the first pad 470 can serve as a measurement point for the first temperature sensing element 430. The package structure 400 can include at least one second temperature sensing component 431. The second temperature sensing component 431 is disposed on the second wafer 423 and electrically connected to the substrate 41 through at least one second bonding wire 441 for measuring The temperature of the second active surface 424. In practice, the second bonding wire 441 can be two, and the second temperature sensing component 431 can be a thermistor, a thermocouple, a temperature sensing chip or a temperature sensor. The second wafer 4M has a pair of a second active surface 4 and a second back surface 425. The second temperature sensing element 431 is located on 201104825 of the second active surface 424, and the first temperature sensing element 430 is located below the second back surface 425. The package structure 400 can include a second carrier 453 disposed on the second active surface 424 and carrying the second temperature sensing component 431. The second carrier 453 has at least one second pad 454. The two ends of the second connector 454 are electrically connected to the second temperature sensing component 431 and the second bonding wire 441, respectively. The substrate 410 has at least one second pad 471 and a second wire 461. The second bonding wire 441 is electrically connected to the first surface 411 of the substrate 410, the second bonding pad 471 is disposed on the second surface 412 of the substrate 410, the second wire 461 is disposed in the substrate 410, and the second bonding wire 441 is electrically Connected to the second pad 471. The package structure 400 can include at least one second metal ball 481 disposed on the second pad 471. The second metal ball 481 or the second pad 471 can serve as a measuring point of the second temperature sensing element 431. The package structure 400 includes an adhesive layer 491 disposed between the first wafer 420 and the second wafer 423 for bonding the first wafer 420 and the second wafer 423 ′ and covering the first temperature sensing component 430 and the first A carrier 450. The sealant 490 covers the second temperature sensing element 431 and the adhesive layer 491. The first wafer 420 can be electrically connected to the substrate 410 by a wire bonding method or a flip chip bonding method. The second wafer 423 is electrically connected to the substrate 410 by wire bonding. As shown in FIG. 4, the first wafer 420 is electrically connected to the first side 411 of the substrate 410 through a plurality of bonding wires 442 or solder balls (not shown). The substrate 410 has a plurality of pads 472 and a plurality of wires 462. The pads 472 are disposed on the second surface 412 of the substrate 410. The wires 462 are disposed in the substrate 410, and the fresh wires 442 are electrically connected to the pads 472, and the pads 472 are disposed. Several metal balls 482. Similarly, the second wafer 423 can be electrically connected to the first surface 411 of the 201104825 substrate 410 through a plurality of bonding wires 443. The substrate 410 has a plurality of pads 473 and wires 463. The pads 473 are disposed on the second surface 412 of the substrate 410. The wires 463 are disposed in the substrate 410, and the bonding wires 442 are electrically connected to the pads 473 ′ and the pads 473 can be disposed. Several metal balls 483. Referring to Figure 5, there is shown a cross-sectional view of a third embodiment of a temperature sensing package structure in accordance with the present invention. As shown, the sealing structure 50A includes a substrate 510, a first wafer 520, at least a first temperature sensing element 530, and a glue 590. The first wafer 520 is disposed above the substrate 510 and electrically connected to the substrate 510 through a plurality of conductive elements 540, that is, the first wafer 520 is electrically connected to the substrate 510 by flip-chip bonding. Each conductive element 540 can be a ball, a metal ball, a gold ball, a solder ball, a bump, a metal block, a contact or an electrical conductor. The first wafer 520 has a first active surface 521 and a first back surface 522, and the first active surface 521 faces the substrate 510. The first temperature sensing element 530 is located between the first active surface 521 and the substrate 510 for measuring the temperature of the first active surface 521. In practice, the first temperature sensing component 530 is a thermistor, a thermocouple, a temperature sensing wafer, or a temperature sensor. The sealant 590 covers the substrate 510, the first wafer 520, the conductive elements 54A, and the first temperature sensing element 530. The substrate 510 has a first surface 511 and a second surface 512, at least one first pad 550, at least one first pad 570, and at least one first wire 560. The first temperature sensing element 530 is disposed on the first surface 511, and the first pad 550 is disposed on the first surface 511' and electrically connected to the first temperature sensing element 530. The first pad 570 is disposed on the second surface 512, and the first wire 56 is disposed in the substrate 510 and electrically connected to the first pad 570 through the first pad 550. The package structure 500 can include at least one first metal ball 580 disposed on the first pad 570. The first metal ball 580 or the first mattress 570 can serve as a measurement point for the first temperature sensing element 53A. The first wafer 520 may include a plurality of pads 523 disposed on the first active surface 521 and electrically connected to the conductive elements 540. The substrate 510 has a plurality of pads 571, a plurality of wires 561, and a plurality of pads 572. The pads 571 are disposed on the first surface 511 and electrically connected to the conductive elements 540. The pads 572 are disposed on the second surface 512. The wires 561 are disposed in the substrate 510, and the conductive members 540 are electrically connected to the pads 572 through the pads 571, and the pads 572 are disposed on the pads 572. Several metal balls 581. Referring to Figure 6, there is shown a cross-sectional view of a fourth embodiment of a temperature sensing package structure in accordance with the present invention. It should be understood that in the fifth and sixth figures, the same numerals represent the same or similar elements, and the outer shape, structure and device have been specifically disclosed in the third embodiment, and in the fourth embodiment, Repeat it. As shown in FIG. 6 , the package structure 500 further includes at least one second temperature sensing component 531 ′. The second temperature sensing component 531 is located on the first back surface 522 of the first wafer 520 and transmits the at least one first bonding wire 541 . The electrical connection substrate 510 ′ is used to measure the temperature of the first back surface 522 . In practice, the first bonding wire 541 can be two, and the second temperature sensing component 531 can be a thermistor, a thermocouple or a temperature sensing chip or a temperature sensor. The package structure 500 can include a first carrier 551 disposed on the first back surface 522 and carrying the second temperature sensing element 531. The first carrier 551 has at least one second pad 552. The two ends of the 201104825 of the second pad 552 are electrically connected to the second temperature sensing component 531 and the first bonding wire 541, respectively. The substrate 510 has at least one second pad 573 and a second wire 562. The first bonding wire 541 is electrically connected to the first surface 511 of the substrate 510, the second bonding pad 573 is disposed on the second surface 512 of the substrate 510, and the second wire 562 is disposed in the substrate 510 and electrically connects the first bonding wire 541. Connected to the second pad 573. The package structure 500 can include at least one second metal ball 582 disposed on the second pad 573. The second metal ball 582 or the second pad 573 can serve as a measuring point for the second temperature sensing element 531. The package structure 500 can include a second wafer 524 located above the first wafer 520 and electrically connected to the substrate 51A. The second temperature sensing element 531 is located between the second back surface 526 of the second wafer 524 and the first wafer 520 for measuring the temperature between the first wafer 52A and the second wafer 524. The second wafer 524 is electrically connected to the substrate 51 by wire bonding. That is, the second wafer 524 can be electrically connected to the first surface 511 of the substrate 51 through a plurality of bonding wires 543. The substrate 510 has a plurality of pads 575 and a plurality of wires φ 564. The pads 575 are disposed on the second surface 512 of the substrate 510. The wires 564 are disposed in the substrate 510, and the bonding wires 543 are electrically connected to the pads 575, and the pads 575 can be disposed. Several metal balls 584. The package structure 500 can include at least one third temperature sensing component 532. The third temperature sensing component 532 is disposed on the second wafer 524 and electrically connected to the substrate 510 through the at least one first bonding wire 542. In practice, the second bonding wire 542 can be two. The third temperature sensing component 532 can be a thermistor, a thermocouple, a temperature sensing chip or a temperature sensor. The first wafer 524 has a second active surface 525 and a second 12 201104825 back 526. The third temperature sensing component 532 is located on the second active surface 525 for measuring the temperature of the second active surface 525. The package structure 500 can include a second carrier 553 disposed on the second active surface 525 and carrying the third temperature sensing component 532. The second carrier 553 has at least one third pad 554. The two ends of the third pad 554 are electrically connected to the third temperature sensing component 532 and the second bonding wire 542 respectively. The second bonding wire 542 is electrically connected to the substrate 510. The first side 511. The substrate 510 can have at least a third wire 563 and a third pad 574. The third pad 574 is disposed on the second surface 512 of the substrate 510. The third wire 563 is disposed in the substrate 510, and the second bonding wire 542 is electrically connected to the third pad 574. The package structure 500 can include at least one third metal ball 583 disposed on the third pad 574. The third metal ball 583 or the third pad 574 can serve as a measurement point for the third temperature sensing element 532. The package structure 500 can include an adhesive layer 591 disposed between the first wafer 520 and the second wafer 524 for bonding the first wafer 520 and the second wafer 524 and covering the second temperature sensing element 531 and the first A carrier plate 551. The sealant 590 can cover the substrate 51, the first wafer 52, the second wafer 524, the first temperature sensing element 53, the second temperature sensing element 531, the third temperature sensing element 532, and the like. It should be understood that the substrate according to various embodiments of the present invention may also be a package substrate, a ceramic substrate, a glass substrate, a printed circuit board, a laminated board, a laminated board, a carrier board or a carrier. . Each wafer can be a wafer of any kind or function. Each of the carrier boards can be a semiconductor wafer, a carrier, a carrier, a substrate, an interposer or a printed circuit board. Each of the pads can be a metal pad, an aluminum pad, a pad, a contact, 13 201104825 2 fingers, : L feet, - pins or a lead frame. Each of the pads can be a known pad, a metal pad, an aluminum pad, a contact, a finger or each wire can be a metal knot. A connecting wire or - wire, etc. Each metal ball can be rabbit - Α θ I», . 碉 bad 7 is a ball, a gold ball, a tin ball, a convex two, a conductor or a connecting element, etc. m , , " ',,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Figure 2 is a cross-sectional view showing another package structure in the prior art. Section 3: Figure 4 is a cross-sectional view of an embodiment of the temperature sensing structure. The fourth item is in accordance with the present invention having a temperature sensing package structure. Sectional view of an embodiment. Figure 5 is a cross-sectional view of an embodiment of a package with temperature sensing in accordance with the present invention. Re & in FIG. 6, a brother-based cross-sectional view in accordance with an embodiment of the present invention κ㈣ ,,, fourth temperature Main elements of the configuration port REFERENCE NUMERALS 201,104,825.
100 、 200 : 封裝結構 452 ： 連接線 111 ' 211 ： 晶片 453 ： 第二載板 112 、 212 : 熱敏電阻 454 ： 第二接墊 113 ' 213 ： 封膠 460 ： 第一導線 120 ' 220 ： 基板 461 ： 第二導線 121 > 221 ： 第一面 462、 463 :導線 122 、 222 ： 第二面 470 : 第一銲墊 123 > 124 、 223、224 :導線 471 ： 第二銲墊 130、230 :接墊 472 > 473 :銲墊 131 ' 132 、 231、232 :銲墊 480 ： 第一金屬球 140 ' 141 ' 240、241 :金屬球 481 ： 第二金屬球 150 、 250 主動面 482 > 483 :金屬球 151 ' 251 背面 490 ： 封膠 160 、 260 銲線 491 ： 黏合層 270 :凹槽 500 ： 封裝結構 300 :封裝結構 510 ： 基板 310 :基板 511 ： 第一面 311 :第一 面 512 ： 第二面 312 :第二 面 520 ： 第一晶片 320 :晶片 521 ： 第一主動面 321 :主動面 522 ： 第一背面 322 :背面 523 ： 銲墊 330 :溫度感測元件 524 ： 第二晶片 340 :第一 銲線 525 ： 第二主動面 341 :第二 鲜線 526 ： 第二背面 350 :載板 530 ： 第一溫度感測元件 15 201104825100, 200: package structure 452: connection line 111 '211: wafer 453: second carrier 112, 212: thermistor 454: second pad 113 '213: sealant 460: first wire 120' 220: substrate 461: second wire 121 > 221 : first face 462, 463 : wire 122 , 222 : second face 470 : first pad 123 > 124 , 223 , 224 : wire 471 : second pad 130 , 230 : pads 472 > 473 : pads 131 ' 132 , 231 , 232 : pads 480 : first metal balls 140 ' 141 ' 240 , 241 : metal balls 481 : second metal balls 150 , 250 active faces 482 > 483: metal ball 151 ' 251 back 490 : sealant 160 , 260 bond wire 491 : adhesive layer 270 : groove 500 : package structure 300 : package structure 510 : substrate 310 : substrate 511 : first face 311 : first face 512 : second surface 312 : second surface 520 : first wafer 320 : wafer 521 : first active surface 321 : active surface 522 : first back surface 322 : back surface 523 : solder pad 330 : temperature sensing element 524 : second wafer 340: First bonding wire 525: Two active surface 341: second line 526 Fresh: a second back surface 350: the carrier plate 530: a first temperature sensing element 15201104825
351 : 接墊 531 第二溫度感測元件 360 ： 第一導線 532 第三溫度感測元件 361 ： 第二導線 540 導電元件 370 ： 第一銲墊 541 第一銲線 371 ： 第二銲墊 542 第二銲線 380 ： 第一金屬球 543 銲線 381 ： 第二金屬球 550 第一接墊 390 ： 封膠 551 第一載板 391 : 黏合層 552 第二接墊 400 ： 封裝結構 553 第二載板 410 ： 基板 554 第三接墊 411 ： 第一面 560 第一導線 412 ： 第二面 561 * 564 :導線 420 ： 第一晶片 562 第二導線 421 ： 第一主動面 563 第三導線 422 ： 第一背面 570 第一銲墊 423 ： 第二晶片 571 、572、575 :銲墊 424 ： 第二主動面 573 第二銲墊 425 ： 第二背面 574 第三銲墊 430 ： 第一溫度感測元件 580 第一金屬球 431 : 第二溫度感測元件 581 、584 :金屬球 440 : 第一銲線 582 第二金屬球 441 ： 第二銲線 583 第三金屬球 442、 443 ··銲線 590 封膠 450 :第一載板 591 黏合層 451 ： 第一接墊 16351 : pad 531 second temperature sensing element 360 : first wire 532 third temperature sensing element 361 : second wire 540 conductive element 370 : first pad 541 first wire 371 : second pad 542 Second bonding wire 380: first metal ball 543 bonding wire 381: second metal ball 550 first pad 390: sealing glue 551 first carrier 391: adhesive layer 552 second pad 400: package structure 553 second carrier 410: substrate 554 third pad 411: first surface 560 first wire 412: second surface 561 * 564: wire 420: first wafer 562 second wire 421: first active surface 563 third wire 422: first Back surface 570 first pad 423: second wafer 571, 572, 575: pad 424: second active surface 573 second pad 425: second back surface 574 third pad 430: first temperature sensing element 580 a metal ball 431: second temperature sensing element 581, 584: metal ball 440: first bonding wire 582 second metal ball 441: second bonding wire 583 third metal ball 442, 443 · welding wire 590 sealing 450 : The first carrier plate 591 is sticky Layer 451: a first pad 16