TW201104384A - Sequence improving circuit - Google Patents

Sequence improving circuit Download PDF

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TW201104384A
TW201104384A TW98125761A TW98125761A TW201104384A TW 201104384 A TW201104384 A TW 201104384A TW 98125761 A TW98125761 A TW 98125761A TW 98125761 A TW98125761 A TW 98125761A TW 201104384 A TW201104384 A TW 201104384A
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Taiwan
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delay
transistor
chip
signal
circuit
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TW98125761A
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Chinese (zh)
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Ke-You Hu
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Hon Hai Prec Ind Co Ltd
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Priority to TW98125761A priority Critical patent/TW201104384A/en
Publication of TW201104384A publication Critical patent/TW201104384A/en

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Abstract

A sequence improving circuit includes a power supply for a motherboard and a super I/O chip. The power supply sends a power good signal to the super I/O chip. The sequence improving circuit further includes a delay circuit connected between the power supply and the super I/O chip. The power good signal is sent to the super I/O chip after being delayed by the delay circuit. The sequence improving circuit utilizes the delay circuit to delay sending the power good signal for preventing that the delay time of the power good signal is not enough and a power up sequence of the motherboard is failure.

Description

201104384 六、發明說明: 【發明所屬之技術領域】 [0001] 本發明涉及一種時序改善電路,特別是一種使PWRGD ( Power Good,電源良好)信號延時的時序改善電路。 [先前技術] [0002] 根據ACPI (Advanced Configuration and Power Interface,高級配置與電源介面)規範,電腦電源管 理系統可將電腦的工作狀態分為S0到S5,它們代表的含 義分別是: 〇 [0003] S0 :電腦正常工称’所有硬體設備全部處於打開或正常 , 工作的狀態; [0004] S1 :也稱為p〇S (Power on Suspend,CPU停止工作) ,其他的硬體設備仍然正常工作; [0005] S2 :將CPU關閉,但其餘的硬體設備仍然運轉; [0006] S3 :通常稱為STR (SuSpend t〇 RAM,掛起到記憶體) Ο ,將運行中的資料寫入記憶體後關閉硬碟; _7] S4 :也稱為STD (Suspend t〇 Msk,掛起到硬碟卜 記憶體資訊寫入硬碟,然後所有部件停止工作; 圆S5 .所有硬體設備(包括電源)全部都關閉,即電腦處 於關·機狀態。 [0009] 098125761 當電腦從S4休眠狀態被唤醒時,電腦主板上的各部件開 始上電,與上電時序相關的信號包括信號、 5V-SYS電壓信號、FSB_VTT信號等。簡GD信號由Ατχ電 表單編號Α0Ι0Ι 第3頁/共12頁 0982044135-0 201104384 源發給Super I/O (超級輸入/輸出)晶片。FSB_VTT是 指FSB (Front Side Bus ’前端匯流排)的終端電壓, FSB疋將CPU連接到北橋晶片的匯流排。根據Intel Spec (英代爾規範).,Super I/O埠的PWRGD信號相對 於FSB_VTT信號的延時不應小於99ms (微秒),否則電 腦主板的上電時序會因PWRGD信號的延時時間不夠發生錯 誤,電腦在S4休眠狀態時無法正常喚醒,電腦出現黑屏 等當機現象。 [0010] [0011] [0012] 【發明内容】 . ... :, ... 鑒於以上内容,有必要輕供一種能延信號的時序 改善電路。 :, 一種時序改善電路,包括一給電腦主板供電的電源及一 超級輸入/輸出晶片,所述電源輸出電源良好信號至所述 超級輸入/輸出晶片,所述時序改善電路還包括一連接於 所述電源及超級輸人/輸出晶片之間的延時電路,所述電 源良好信號經過所述延時電務的延時後輸出至所述超級 輸入/輸出晶片。 .丨;+: . .. · .: :: . 相較于習知技術’本發日㈣序改善電路洲所述延時電 路延遲所述電源良好信號的傳輸,以防止所述電源良好 信號的延時時間不夠導致主板上電時序錯誤。201104384 VI. Description of the Invention: [Technical Field] [0001] The present invention relates to a timing improvement circuit, and more particularly to a timing improvement circuit for delaying a PWRGD (Power Good) signal. [Prior Art] [0002] According to the ACPI (Advanced Configuration and Power Interface) specification, the computer power management system can divide the working state of the computer into S0 to S5, and their meanings are: 〇[0003 ] S0: The normal working name of the computer is 'all hardware devices are all open or normal, working state; [0004] S1: also known as p〇S (Power on Suspend, CPU stops working), other hardware devices are still normal [0005] S2: Turn off the CPU, but the rest of the hardware is still running; [0006] S3: Usually called STR (SuSpend t〇RAM, suspend to memory) Ο, write the running data Close the hard disk after the memory; _7] S4: Also known as STD (Suspend t〇Msk, suspend the hard disk memory information to the hard disk, then all parts stop working; round S5. All hardware devices (including The power supply is turned off, that is, the computer is in the off state. [0009] 098125761 When the computer wakes up from the S4 sleep state, the components on the computer motherboard start to power up, and the signals related to the power-on sequence include the signal, 5V- SYS voltage signal, FSB_VTT signal, etc. Jane GD signal is Ατχ electric form number Α0Ι0Ι Page 3/12 pages 0982044135-0 201104384 Source is sent to Super I/O (Super Input/Output) chip. FSB_VTT means FSB (Front Side The terminal voltage of the Bus 'front busbar', FSB疋 connects the CPU to the busbar of the Northbridge chip. According to the Intel Spec., the delay of the PWRGD signal of the Super I/O埠 relative to the FSB_VTT signal should not be less than 99ms (microseconds), otherwise the power-on sequence of the computer motherboard will be incorrect due to the delay time of the PWRGD signal, the computer will not wake up normally when the S4 sleeps, and the computer will appear black screen and other crashes. [0010] [0012] [Invention] [...], ... In view of the above, it is necessary to provide a timing improvement circuit capable of extending the signal. A timing improvement circuit includes a power supply for supplying power to the computer motherboard and a super input. / output chip, the power supply output power good signal to the super input / output chip, the timing improvement circuit further includes a connection to the power supply and super input / output chip a delay circuit, the power good signal is outputted to the super input/output chip after a delay of the delay power. . . .;:: . . . . . . :: . Compared with the prior art The delay circuit of the circuit (4) is used to delay the transmission of the power good signal to prevent the delay time of the power good signal from being insufficient to cause the power-on timing error of the motherboard.

[0013] 098125761 【實施方式】 請參閱圖卜本發明較佳實施方式時序改善電路包括-給 電腦主板供電的m電源1〇、—延㈣路2QpSupeF I/O (超級輸入/輸出)晶片如 ^ 。所述ΑΤΧ電源10的PG ( Power Good,電源良好)引 ’丨腳輸出PWRGD信號,該 表單編號A0101 第4頁/共12頁 0982044135-0 201104384 PWRGD信號經過所述延時電路2〇的延時後輸出至所述Super I/O 晶片 30的 PG 引腳 ( 通常為 Super I/O 晶片 30 的 第95腳)。 [0014] 〇 [0015][0013] </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> . The PG (Power Good) of the power supply 10 is referred to as a PWRGD signal, and the form number A0101 is 4th/12 pages 0992044135-0 201104384. The PWRGD signal is outputted after the delay of the delay circuit 2〇. To the PG pin of the Super I/O chip 30 (usually the 95th pin of the Super I/O chip 30). [0014] [0015]

請參閱圖2,所述延時電路2〇包括一第一電晶體(N溝道 增強型MOSFET) Q1、一第二電晶體(N溝道增強型M0S-FET) Q2及一延時晶片U1。所述第一電晶體Q1的閘極透 過一電阻R1連接至所述ATX電源10的PG引腳,一濾波電 容C1的一端與所述第一電晶體Q1的閘極相連,另一端接 地。所述第一電晶體Q1的汲極透過一電阻R2接有5V一SYS 電壓(5伏系統電壓),並透過一電阻R3與所述第二電晶 體Q2的閘極相連。所述第二電晶體Q2的汲極透過一電阻 R4接有5V一SYS電壓,並透過一電阻R5連接至所述延時晶 片U1的第一輸入端ία,所述延時晶片U1的第一輸入端1AReferring to FIG. 2, the delay circuit 2A includes a first transistor (N-channel enhancement type MOSFET) Q1, a second transistor (N-channel enhancement type MOS-FET) Q2, and a delay chip U1. The gate of the first transistor Q1 is connected to the PG pin of the ATX power supply 10 via a resistor R1. One end of a filter capacitor C1 is connected to the gate of the first transistor Q1, and the other end is grounded. The drain of the first transistor Q1 is connected to a 5V-SYS voltage (5 volt system voltage) through a resistor R2, and is connected to the gate of the second transistor Q2 through a resistor R3. The drain of the second transistor Q2 is connected to a 5V-SYS voltage through a resistor R4, and is connected to the first input terminal ία of the delay chip U1 through a resistor R5. The first input terminal of the delay chip U1 1A

還接有一濾波電容C2。所述第一電晶體及第二電晶體 Q2的源極均接地。 所述延時晶片U1包括兩個反閘,每一反閘均使輸入信號 反相,並使輸八信號延時輸出„所述延時晶片U1的第一 輸入端1A與第一輸出端ιγ、第二輸入端2A與第二輸出端 2Y之間的邏輯關係為: [0016] 1A 1Y 2A — 2Y 低 高 低 ---- 高 1¾ 低 高 — 低 所述延時晶片U1的第一輸出端ιγ與其第二輸入端2几相連 ,VCC引腳接一3V的工作電壓,GND引腳接地。所述延時 晶片U1的第一輸入端1A接入輸入信號,該輸入信號經過 表單編號A0101 第5頁/共12 1 098125761 0982044135-0 201104384 延時並反相後透過第一輸出端1¥輸出至所述延時晶片W 的第二輸入端2A,該輸入信號經過第二次反相及延時後 透過第二輸出端2Y輸出至所述Super 1/〇晶片3〇。所述 Super I/O晶片30的PG引腳透過一電阻R6接收所述延時 晶片U1的第二輸出端2Y輸出的信號。 [0017] [0018] [0019] 當所述PWRGD信號為低電平時,所述第一電晶體Qi斷開, 第二電晶體Q2導通,所述第二電晶體q2的漏源極之間的 阻抗迅速降低,將所述第二電晶體Q2的汲極電壓拉低, 因此輸出低電平的信號至所述延時晶片Ui的第—輸入端 1A,所述延時晶片U1將其第_輸入端^接收到的低電平 的信號經過兩次反相、兩次延時後透過其第二輪出端2¥ 輸出(低電平的PWRGD信號)至所述Super 1/〇晶片3〇 的PG引腳。 當所述PWRGD信號為高電平時,所述第一電晶體q〗導通, 所述第一電晶體Q1的漏源極之間的阻抗迅速降低,使所 述第一電晶體Q1的汲極電壓拉低,因此所述第二電晶體 Q2斷開’所述第二電晶體Q2汲極參壓為高電平,輸出高 電平的信號至所述延時晶片U1的第一輸入端ία,所述延 時晶片U1將其第一輸入端1A接收到的高電平的信號經過 兩次反相、兩次延時後透過其第二輸出端2Y輸出(高電 平的PWRGD信號)至所述Super I/O晶片30的PG。 當電腦從S4休眠狀態喚醒後,FSB_VTT信號由低電平跳 變為高電平,ATX電源1〇的PWRGD信號經過延時後(小於 規定的99ms)由低電平跳變為高電平,為防止pwrgD信 號相對於FSB_VTT信號的延時時間不夠,PWRGD信號透過 098125761 表單編號A0101 第6頁/共12頁 0982044135-0 201104384 所述延時電路20延時後再輸出至所述如障1/〇晶片3〇 〇 闕請參閱圖3 ’採用所述延時電路2〇後,經過驗證,所述 Super I/O晶片30埠的PG信號與FSB_VTT信號之間的延 時時間為101ms,能滿足正常的上電時序,從而使電腦可 從S4休眠狀態正常喚醒。 [0021] 综上所述,本發明係合乎發明專利申請條件,爰依法提 出專利中請。惟,以上所述僅為本發明之較佳實施例, 〇 軌熟悉本案技藝之人士其所爰依本案之創作精神所作 之等效修飾或變化,皆應涵蓋於以下之申請專利範圍内 【圖式簡單說明】 [0022] 圖1是本發明較佳實施方式時序改善電路的框圖。 [0023] 圖2是本發明較佳實施方式時序改善電路的具體電路圖。 [0024] 圖3是採用本發明較隹實施方式時序改善電路後pWRGD及 〇 fsb~vtt信號的時序圖。 f主要1 件符號說明】 [0025] ATX電源 10 延時電路 20 Super I/O晶 30 片 098125761 表單編號A0101 第7頁/共12頁 0982044135-0A filter capacitor C2 is also connected. The sources of the first transistor and the second transistor Q2 are both grounded. The delay chip U1 includes two reverse gates, each of which reverses the input signal and delays the output of the eight signals. The first input terminal 1A of the delay chip U1 and the first output terminal ιγ, the second The logical relationship between the input terminal 2A and the second output terminal 2Y is: [0016] 1A 1Y 2A - 2Y low high and low - high 13⁄4 low high - low first delay terminal U1 of the wafer U1 and its second The input terminal 2 is connected, the VCC pin is connected to a working voltage of 3V, and the GND pin is grounded. The first input terminal 1A of the delay chip U1 is connected to an input signal, and the input signal passes through the form number A0101, page 5 / total 12 1 098125761 0982044135-0 201104384 After being delayed and inverted, the first output terminal 1 is outputted to the second input terminal 2A of the delay chip W, and the input signal passes through the second output terminal 2Y after the second inversion and delay. The PG pin of the Super I/O chip 30 is received by a resistor R6 to receive a signal output by the second output terminal 2Y of the delay chip U1. [0018] [0019] when the PWRGD signal is low, the first transistor Qi Turning on, the second transistor Q2 is turned on, the impedance between the drain and the source of the second transistor q2 is rapidly lowered, and the drain voltage of the second transistor Q2 is pulled low, so that a signal of a low level is output to The first input terminal 1A of the delay chip Ui, the delay chip U1 passes the signal of the low level received by the _ input terminal ^ through two inversions, two delays, and then passes through the second round output end 2 ¥ output (low level PWRGD signal) to the PG pin of the Super 1/〇 chip 3〇. When the PWRGD signal is high level, the first transistor q is turned on, the first power The impedance between the drain and the source of the crystal Q1 is rapidly lowered, so that the drain voltage of the first transistor Q1 is pulled low, so that the second transistor Q2 is turned off, and the second transistor Q2 has a threshold voltage of a high level, outputting a high level signal to the first input terminal ία of the delay chip U1, the delay chip U1 passes the high level signal received by the first input terminal 1A twice, and two After the second delay, the second output terminal 2Y outputs (high-level PWRGD signal) to the PG of the Super I/O chip 30. When the computer wakes up from the S4 sleep state, the FSB_VTT signal changes from low level to high level, and the PWRGD signal of the ATX power supply 1〇 transitions from low level to high level after a delay (less than the specified 99ms). The delay time of the pwrgD signal relative to the FSB_VTT signal is not enough. The PWRGD signal is transmitted through the 098125761 form number A0101. Page 6/12 pages 0982044135-0 201104384 The delay circuit 20 delays the output to the chip 1/〇3. Referring to FIG. 3, after the delay circuit 2 is used, it is verified that the delay time between the PG signal and the FSB_VTT signal of the Super I/O chip 30埠 is 101 ms, which can satisfy the normal power-on sequence. This allows the computer to wake up normally from the S4 sleep state. [0021] In summary, the present invention is in accordance with the conditions of the invention patent application, and the patent is filed according to law. However, the above description is only the preferred embodiment of the present invention, and the equivalent modifications or changes made by those who are familiar with the art of the present invention in accordance with the creative spirit of the present invention should be covered in the following patent application. BRIEF DESCRIPTION OF THE DRAWINGS [0022] FIG. 1 is a block diagram of a timing improvement circuit in accordance with a preferred embodiment of the present invention. 2 is a detailed circuit diagram of a timing improving circuit in accordance with a preferred embodiment of the present invention. 3 is a timing diagram of pWRGD and 〇 fsb~vtt signals after timing improvement circuit of the embodiment of the present invention. f main 1 symbol description] [0025] ATX power supply 10 delay circuit 20 Super I/O crystal 30 piece 098125761 Form number A0101 Page 7 of 12 0982044135-0

Claims (1)

201104384 七、申請專利範圍: 1 . 一種時序改善電路,包括一給電腦主板供電的電源及一超 級輸入/輸出晶片,所述電源輸出電源良好信號至所述超 級輸入/輸出晶片,所述時序改善電路還包括一連接於所 述電源及超級輸入/輸出晶片之間的延時電路,所述電源 良好信號經過所述延時電路的延時後輸出至所述超級輸入 /輸出晶片。 2 .如申請專利範圍第1項所述之時序改善電路,其中所述延 時電路包括一延時晶片,所述延時晶片使其接入的信號延 時輸出。 3.如申請專利範圍第2項所述之時序改善電路,其中所述延 時晶片包括一第一輸入端及一第一輸出端,所述第一輸入 端接入的信號經過延時和反相後透過所述第一輸出端輸出 〇 4 .如申請專利範圍第3項所述之時序改善電路,其中所述延 時晶片還包括一第二輸入端及一第二輸出端,所述延時晶 片的第二輸入端與其第一輸出端相連,所述第二輸入端接 入的信號經過延時和反相後透過所述第二輸出端輸出。 5 .如申請專利範圍第4項所述之時序改善電路,其中所述延 時電路還包括連接於所述電源及所述延時晶片之間的一第 一電晶體及一第二電晶體。 6. 如申請專利範圍第5項所述之時序改善電路,其中所述第 一電晶體及第二電晶體均為N溝道增強型場效應管。 7. 如申請專利範圍第6項所述之時序改善電路,其中所述第 一電晶體的栅極透過一第一電阻接入所述電源產生的電源 098125761 表單編號A0101 第8頁/共12頁 0982044135-0 201104384 良好信號,所述第一電晶體的汲極透過一第二電阻接電源 ,所述第一電晶體的源極接地;所述第二電晶體的閘極透 過一第三電阻與所述第一電晶體的汲極相連,所述第二電 晶體的汲極透過一第四電阻接電源,所述第二電晶體的源 極接地。 8.如申請專利範圍第1項所述之時序改善電路,其中在電腦 從S4休眠狀態唤醒時,所述超級輸入/輸出晶片的電源良 好引腳接收的信號相對於一前端匯流排的終端電壓信號延 時時間不小於99微秒。 ❹ ❹ 098125761 表單編號A0101 第9頁/共12頁 0982044135-0201104384 VII. Patent application scope: 1. A timing improvement circuit comprising a power supply for supplying power to a computer motherboard and a super input/output chip, the power supply outputting a good signal to the super input/output chip, the timing improvement The circuit further includes a delay circuit coupled between the power source and the super input/output chip, the power good signal being output to the super input/output chip after a delay of the delay circuit. 2. The timing improvement circuit of claim 1, wherein the delay circuit comprises a delay chip, the delay chip outputting a signal delayed by the signal. 3. The timing improvement circuit of claim 2, wherein the delay chip comprises a first input end and a first output end, and the signal input by the first input end is delayed and inverted. The timing improvement circuit of the third aspect of the invention, wherein the delay chip further includes a second input end and a second output end, the delay chip The second input end is connected to the first output end, and the signal input by the second input end is outputted through the second output end after being delayed and inverted. 5. The timing improvement circuit of claim 4, wherein the delay circuit further comprises a first transistor and a second transistor connected between the power source and the time delay wafer. 6. The timing improvement circuit of claim 5, wherein the first transistor and the second transistor are both N-channel enhancement type field effect transistors. 7. The timing improvement circuit of claim 6, wherein the gate of the first transistor is connected to the power source 098125761 through a first resistor. Form No. A0101 Page 8 of 12 0982044135-0 201104384 a good signal, the drain of the first transistor is connected to the power supply through a second resistor, the source of the first transistor is grounded; the gate of the second transistor is transmitted through a third resistor The drain of the first transistor is connected, the drain of the second transistor is connected to the power source through a fourth resistor, and the source of the second transistor is grounded. 8. The timing improvement circuit of claim 1, wherein the signal received by the power good pin of the super input/output chip is opposite to the terminal voltage of a front side bus when the computer wakes up from the S4 sleep state. The signal delay time is not less than 99 microseconds. ❹ 098 098125761 Form No. A0101 Page 9 of 12 0982044135-0
TW98125761A 2009-07-30 2009-07-30 Sequence improving circuit TW201104384A (en)

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