TW201104381A - A proportional to absolute temperature current and voltage of bandgap reference with start-up circuit - Google Patents

Abstract

A bandgap reference which consists of start-up circuit, current reference circuit and voltage reference circuit is presented, especially independent of temperature. The purpose of this invention is to provide both temperature-independent current reference (Iref) and voltage reference (Vref) and to operate completely with low voltage for saving the power dissipation. In the start-up circuit, it consists of a first PMOSFET (Mp), a second PMOSFET (Ms) and a third NMOSFET (Mn). Furthermore, there are a forth PMOSFET (M1), a fifth PMOSFET (M2), a seventh PMOSFET (M4), an operational amplifier with differential NMOS input (N-type OPA), a first boost resistor (Ra1), a second boost resistor (Ra2), a forth compensational resistor (Rb1), a fifth compensational resistor (Rb2), a seventh bias resistor (R2), a first BJT (Q1) and a second BJT (Q2) in the current reference circuit. Also, the voltage reference circuit concludes an operational amplifier with differential NMOS input (N-type OPA), a sixth PMOSFET (M3), a first boost resistor (Ra1), a second boost resistor (Ra2), a third boost resistor (Ra3), a forth compensational resistor (Rb1), a fifth compensational resistor (Rb2), a sixth compensational resistor (Rb3), a seventh bias resistor (R2), a first BJT (Q1), a second BJT (Q2) and a third BJT (Q3). Based on the combination of start-up circuit, current reference circuit and voltage reference circuit, this invention not only provides temperature-independent current reference and voltage reference, simultaneously, but also works at low voltage to reduce the power dissipation.

Description

201104381 VI. Description of the Invention: [Technical Field of the Invention] The present invention belongs to the field of analog wafer design, and can be composed of circuits such as = saki, her correction circuit, reference current circuit, and reference voltage pole. When the off can be provided with the temperature = the age of participation, __ loser force; in addition, the use of = circuit 'the difference between the reference circuit can be called low voltage operation, to achieve power saving effect. [Prior Art] In the analog circuit Fan Hong, the voltage and current reference secrets are widely used, and the ideal reference voltage is not related to the source, the dish, and the process parameters. However, because the temperature change will greatly affect the physical properties of the semiconductor, it is easy to cause the circuit to be offset. Therefore, the positive and negative temperature coefficients must be used to cancel each other to suppress the influence of temperature on the circuit. This is also a good reference circuit. condition. • I rides as the basic architecture of the referenced difference reference circuit, which is a combination of two voltage signals. The first voltage signal is the base voltage I of the double-carrier junction transistor, which is the temperature of the ship type f; the second temperature of the Weixi County is Wei Vp, which is amplified by K times and then A voltage signal is added to achieve temperature compensation. According to the conventional architecture of the first figure, an operational amplifier input with pM〇s has been proposed to develop a low voltage TT difference reference circuit. The second figure shows a conventional low voltage band difference reference circuit 200' which includes a gold-oxygen semiconductor transistor M20 i, M202, M203, a bipolar junction transistor Q2 (1), Q202, and a resistor R2 (H, R202). , R203, R204, R205, R206 and operational amplifier A2m. Qian Road can generate a stable reference current 1, flowing through the resistor (4) 6 to produce a stable output reference power 201104381 pressure vref_2. However, due to temperature changes will still affect the resistance illusion 6 The change of the resistance value is easy to cause the fluctuation of the reference voltage, so it still needs to be compensated further. Moreover, under the condition of single power supply, the operational amplifier with PMOS input will have low DC bias and temperature. The drift problem will cause the grounding bias transistor to be inoperable in the saturation region, and the abnormal operation will occur. The solution can be changed to the operational amplifier of the NMOS input, but further compensation of the bias voltage is required. So that the op amp can work normally. As for the time, most of the reference circuits can only provide a reference or reference separately, if the temperature-free reference is provided. And the reference current, the application range of the band difference reference circuit can be expanded. SUMMARY OF THE INVENTION The object of the present invention is to provide a reference to a temperature and no reference, and to a reference circuit, a reference current circuit and a reference voltage circuit. The utility model can simultaneously output the reference current and the reference voltage which are independent of temperature, thereby improving the industrial utilization thereof, and can be operated under the pressure condition through the starting circuit to achieve the effect of saving power. _ " The purpose of the invention is further: use A start_up circuit with three transistor cultivators. When all the currents flowing through the fields of the field are zero, the three transistors are in a closed state; when the power supply voltage is to be added, the starting circuit can be at a low voltage ( Under the condition of less than 15 volts, the start of the belt with the test is = 并 衫 衫 于 于 鹤 鹤 余 余 余 , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , The output of the test current can clearly show the effect of the material of the difference reference circuit, and the degree of the material is the purpose of the present invention. A differential reference circuit having a start-up sub-phase and a correlation circuit as described and generally described, and providing a temperature-independent reference current 201104381 and a reference voltage, the technical characteristics of which are: a start-up circuit, a reference current circuit And a reference voltage circuit; wherein the starting circuit has a -P-type MOS half-effect transistor (Mp), a second P-type MOS field-effect transistor _ and a third N-type oxy-half field The electric current crystal (Mn) or the like is electrically connected; the reference current circuit has a fourth P-type gold oxygen half field effect transistor (10), and a fifth p-type gold emulsion half field effect transistor (M2) a seventh P-type MOS half-effect transistor _), an N-type differential input operational amplifier (N_type 〇PA), a first boost resistor (four)), a second boost resistor (Ra2), - Electrical properties of the fourth compensation resistor (), a fifth compensation resistor (Qing, a seventh bias resistor (4), - a - bipolar junction transistor (Q1), and a second bipolar junction transistor (4) The connection is composed; the reference voltage circuit has "f six p-type gold oxygen half-time money m (m3), _ N The differential input operator magnifies the sun coffee 〇 Α), the _ first boosting resistor, the second boosting resistor (Ra2), the second boosting residual (Ra3), and the fourth compensating resistor (cell) , - fifth compensation resistor (Rb2), - six compensation compensation Rb3), _ seventh resistance (four), - first bipolar junction transistor (Q1) 帛 - bipolar junction transistor (q2) and - Three bipolar junction transistors ((9) and other electrical connections. Another 'the invention has a start-up circuit and can provide a temperature-independent reference electrode and a reference I voltage difference reference circuit, wherein the differential-reference voltage circuit is provided with a first-boost resistor ( Ral) and a second boosting resistor (Ra2_ to boost the bias potential of the positive and negative terminals of the operational amplifier of the N-type differential input. Further, the second bipolar junction transistor of the reference current circuit (Q2) The base voltage of the base (vd has a temperature coefficient of 贞 voltage, and the fifth compensation resistor (Rb2) has a negative current temperature coefficient, the first bipolar junction transistor (Q1) and the second bipolar junction transistor (4) The base voltage difference (ΔVBE) of the base is mad voltage temperature ship, so that the Hertz seven collisions (four) (four) flow has a positive current temperature coefficient, which can be fresh five heat peak b2) lion temperature ship mutual her; Xiao, Forming a temperature-free reference current with 201104381, via a fourth p-type gold-oxygen half-field effect transistor (M1), a fifth p-type gold-oxygen half-body (M2), and a ★P-type gold-oxygen half-field effect transistor (called The current mirror of the city rotates the reference current 'so that it can be made with temperature without reference current core.' The sixth p-type MOS field-effect transistor state of the circuit can provide a temperature-independent reference current by the electric "_<· mirror effect; due to the base of the third bipolar junction transistor (Q3) The pole voltage (νΒΕ) has a negative voltage temperature coefficient characteristic, and the positive voltage coefficient of the third boosting resistor ((4)) is added to compensate the third bipolar junction transistor ((9) the base voltage (νΒε) ) 贞 voltage and temperature, 剌 and temperature without _ reference voltage (vj. Also described as the first - boost resistor (Ral), second boost resistor ((four), third boost resistor (four), fourth compensation resistor _), the fifth compensating resistor _) and the sixth compensating resistor _ are made of N well, and have two temperature coefficients; and the seventh bias resistor (4) is composed of an n-type diffusion region (n+- Made of diffusiGn) with a lower temperature coefficient.

The invention will be further described in detail below with reference to the accompanying drawings and embodiments' as follows: Firstly, reference is made to the third figure, the county invention has a start-up circuit and can simultaneously provide temperature-independent The difference between the reference current and the reference voltage reference circuit is characterized in that it is composed of a start-up circuit, a reference current circuit 2 and a reference voltage circuit 3, and can be used in a low voltage (less than 1.5 volts) condition. Working under, to achieve power saving effect; its A, the starting circuit (please refer to the third figure), contains three transistor readings, respectively, the first oxygen absorbing half field effect transistor (Mp), the second p type a gold-oxygen half field effect transistor (Ms) and a third N-type oxygen semiconductor discharge body ((4), the towel thereof, the first p-type gold oxide half field effect transistor (Mp) includes - gate first - miscellaneous, - The third source and the __ fourth base ten kisses, the first gate electrode 201104381 is connected to the output end of the N-type differential input operational amplifier, the second source and the fourth substrate are electrically coupled to The positive terminal (VDD) of the power supply, and the third drain is electrically coupled a first p-gate of a second p-type MOS field-effect transistor (Ms); the second p-type MOS field-effect transistor (Ms) includes a first gate, a second source, and a third a pole and a fourth substrate, the first gate is electrically coupled to the third terminal of the P-type MOS field-effect transistor (Mp), and the second source is electrically connected to the fourth substrate To the positive terminal (Vdd) of the power supply, and the third pole is electrically connected to the negative input terminal (Vin·) of the N-type differential input operational amplifier (N-type OPA); the third _ gold oxygen The half field effect transistor (Μη) includes a -th gate, a second source, a third pole and a fourth base kiss, the first gate, the first source and the fourth substrate At the same time, the grounding end (5) of the power supply is electrically connected, and the third pole is electrically connected to the third-P type metal oxide half-effect transistor. Please refer to the third, fourth, and fifth diagrams at the same time. #The differential reference circuit is in the no-power state, 'all the transistors enter the wire' so that the current of the transistor is zero; and when the power supply voltage When VDDS rises gradually (please refer to the fourth figure), because the first p-type MOS field-effect B body (Mp) and the second N-type MOS field-effect transistor (Mn) operate in the three-zone ( Tri〇de mailing the second P-type MOS half-effect transistor (Ms) at the end of the potential is about half of the power supply voltage d); and when the second p-type MOS half-effect transistor (Ms) The idle voltage (Vmsg) is quickly raised two times. 'The second P-type gold-oxygen half-field effect crystal (Ms) immediately enters the conduction state, and the source current is “rapidly improved (please refer to the fifth®), sewing the dragon weaving The human-computing amplifier A||(N_type〇pA) lowers the first-boost resistor (Rai) and the fine compensation resistor (Rbl), so that the input voltage of the county (four) differential input operational amplifier (N-type 0PA) starts. At the same time, a voltage output is generated at the output terminal (V〇pA〇ut) of the N-type differential input operational amplifier (Ν-typeOPA), thereby starting the fourth p-type MOS field-effect transistor (Ml), Five p-type gold-oxygen half-field effect transistor (M2), sixth p-type gold-oxygen half-field effect transistor (JVG) and seventh P-type gold-oxygen half-field effect transistor. After the startup work is completed, „海第一P The inter-electrode voltage (v_) of the type of gold-oxygen half-field effect transistor (10) continues to rise, causing the second p 201104381 type gold-oxygen half-field effect transistor (MS) to enter an off state, and the source current Ims drops to zero; A P-type gold-oxygen half-field effect transistor (Mp) operates in the three-turn region, and its function approximates the resistance, thus making the gate voltage (vMSG) of the first P-type MOS field-effect transistor (Ms) follow the power supply voltage. The rise of vDD and the synchronous rise' causes the first p-type gold-oxygen half-field effect transistor (Mp) to enter the off state instantaneously, and the startup circuit is separated from the main circuit without affecting the normal operation of the difference reference circuit. The reference current circuit (please refer to the third figure), has a fourth 卩 type MOS half field effect aa body (Ml) fifth P type MOS half field effect transistor (M2), a seventh p type Gold oxygen half field effect transistor (M4), N type wire input operational amplifier (N_tyPe boost resistor (Ral), a second boost resistor (Ra2), a fourth compensation resistor (Rbl), a fifth The compensation resistor _), the seventh bias resistor (four), a first bipolar junction transistor _ and a second bipolar junction transistor (Q2) are connected by f, and can be formed without temperature _ Reference current (4) wherein the mysterious fourth p S gold oxygen half field effect transistor (Ml) comprises a first pole, a second source, a first - and a pole and a fourth base Gdy), the first The gate is connected to the output terminal of the N-type differential input, and the second source and the fourth substrate are electrically connected to the positive terminal (VDD) of the power supply, and the first-level pole is electrically connected. To the second? The type of gold-oxygen half-field effect transistor (10)) is the extreme of the spring and the input of the (4)-type wire input operator A||the bungee input end (10)·); the fifth p-type gold-oxygen half-field effect transistor (M2) The utility model comprises a first gate, a second source, a third pole and a fourth base, and the county electric power is connected to the output of the N-shaped wire input A||(N_type 0 gang) 'The second source and the fourth substrate are electrically connected to the positive end of the power supply~), and the third drain is multiplexed to the positive terminal 3 of the N-type differential input wall (OPA) Vin+), the seventh P-type MOS field effect transistor (M4) includes a first interpole, a second, ',. a first-and-fourth substrate, the first-fg pole (10) is connected to the output terminal of the N-type differential input, and the second source and the fourth substrate are electrically connected to the power source End (DD) instead. Haidi-; and the extreme electrical connection to the output of the reference current circuit (U; the type 201104381 = ^_A|| (N_type _ including _ human-end, positive input., output (V〇 pAQut) and other endpoints 'the negative input (10) 恫 electrical p-type = field effect transistor (Ms) third 汲 extreme, the fourth p-type MOS half-effect transistor _ bis and extreme and first The first end of the boost resistor (Ral), the positive input terminal (5)+) is simultaneously connected to the third peg end of the fifth p-type MOS field-effect transistor (M2) and the second boost resistor _ - the end, and the output (VOPAOUt) is simultaneously electrically connected to the first pottery, the fourth _, the fifth _ and the seventh (the first closed end of the Qing type MOS half-effect transistor; the first liter The first end and the second end are electrically connected to the negative input end (Vin_) of the negative input of the N-type differential input and the second remuneration Simultaneously to the second end of the fourth compensating resistor, the first end and the second bipolar junction, and the second rising resistor (Ra2) includes a first end and a second end, the first - terminal electrical _ to the operation of the n-type wire input amplification H极 Continuation νιη+), _ second end qing _ _ (four) the first end of the fifth compensation resistor (Rb2) and the seventh bias resistor (R2); the fourth compensation resistor just includes the first And the second end of the second end 'the first end is electrically _ the second end of the first boost resistor (Ral) and the second emitter of the first bipolar junction), and the second The terminal is grounded; the fifth compensating resistor (Rb2) includes a first end and a second end, and the second end of the first end _ electrical input to the second boosting resistor _) has no seventh (4) (four) ― end, The second end is grounded; the seventh bias resistor (R2) includes a first end and a second end, and the first end is electrically connected to the second end of the second boosting f (Ra2) And the first end of the fifth compensation resistor _), and the second end is electrically reduced to the second emitter end of the second bipolar junction transistor (Q2); the first bipolar junction transistor ( Q1) includes a - base - a second emitter (Emi (four)) and a third collector (Coitoor), the first base is electrically coupled to the second bipolar junction transistor (Q2) The first base and the ground end, the second emitter is electrically connected to the first rising resistor (4)) the second end is opposite to the first end of the fourth compensating resistor (Rb1), and the third collector is grounded; the second bipolar junction is electro-crystal 1! 201104381 The body (Q2) includes a first base a base, a second emitter (Emitter) and a third collector (Collector) 'the first base jigj electrically connected to the first base of the first bipolar junction transistor (Qi) The grounding end electrically connects the second emitter to the second end of the seventh bias resistor (R2), and the third collector is grounded. The reference voltage circuit 'has a fourth p-type MOSFET, a fifth P-type MOS field-effect transistor (M2), a sixth p-type MOS field-effect transistor, a N Type differential input operational amplifier (N_type 〇PA), - first boosting resistor (four)), a second boosting resistor _), a second boosting resistor (Ra3), a fourth compensation resistor (Rbl), - a fifth compensation resistor - a sixth compensation resistor _), a seventh bias resistor (four), a first bipolar junction transistor (Q1), a first bipolar junction transistor (q2) and a third pair The electrical connection of the pole junction transistor (q3) or the like, the towel, the fourth p-type gold oxide half field effect transistor (mi), the fifth p-type gold oxide half field effect transistor (M2), N type Differential input operational amplifier (Ν__〇ρΑ), first boost resistor (Ral) first boost resistor (10) 2), fourth compensation resistor), fifth compensation resistor (coffee), seventh bias resistor ( The electrical connection between the R2), the first bipolar junction transistor (Q1) and the second bipolar junction transistor (4) is the same as that of the reference f-current circuit. * The sixth p #f gold oxygen half field effect transistor (M3) includes - a first gate, a second source, a third pole and a substrate, the first -_ electric_ connected to the N type The output of the wire input short circuit amplifier knows that the pin 2 source and the fourth substrate are electrically connected to the positive terminal (I) of the power supply, and the third pole is coupled to the output end of the reference dragon circuit ( I); the third boosting resistor (4) includes a first end and a second end 'the first end is electrically connected to the wheel terminal (Vref) of the reference voltage circuit '(4), the second end is simultaneously electrically Lightly connected to the first end of the sixth compensation resistor _) and the second end of the third bipolar junction 2 (Q3); the sixth compensation resistor _) includes a first end and a second end, the first — the end is simultaneously electrically connected to the second end of the third liter resistor (Ra3) and the second end of the third bipolar transistor (Q3), and the second end is grounded; Bipolar junction crystal _) package = 12 m 201104381 A first base (Base), a second emitter (Emitter) and a third collector (c〇Uect〇r), the first base is grounded The second emitter is electrically coupled to the second end of the third boosting resistor (Ra3) at the same time. And the first end of the sixth compensation resistor (Rb3), and the third collector is grounded. The set first boosting resistor (Ral) and the second boosting resistor are used to boost the bias potential of the n-type differential input operational amplifier (N-type OPA), and the third boosting resistor (Ra3) ) is used to compensate for the second bipolar junction transistor (4) riding light. That is to say, the 帛-bipolar junction transistor (Q1), the second bipolar junction transistor (Q2) and the third bipolar junction transistor (Q3) have a negative electric coefficient. The characteristic, thus causing the current flowing through the fourth compensation resistor (RM), the fifth compensation resistor _) and the sixth compensation resistor _) to have a negative current temperature coefficient, and a positive current temperature coefficient flowing through the seventh bias resistor ( The temperature coefficient of the positive voltage generated by the first bipolar junction transistor and the base potential difference of the second bipolar junction transistor (Q2) can be obtained without a reference current. Furthermore, since the current of the third boost fm (Ra3) is not changed by the temperature of the disk, the temperature coefficient of the positive voltage of the pressurization line can be used for the third bipolar junction. The negative voltage temperature coefficient 1 of the base voltage of Jing Jing) gives a reference voltage (I) which is independent of the temperature change. Please refer to the sixth figure. When the compensation resistor (Rb series) is not added, the variability of the output reference voltage to the temperature change is: the reference voltage; and after the compensation resistor is added, the output reference voltage is obviously made to the temperature ^ ^ The resulting change in the drop (the compensated output reference voltage), the compensation effect. And please moxibustion test: It is the output result of the temperature change after the production of the wafer into the wafer. The temperature range is between this and the temperature, and the reference voltage of the difference is about 6 volts (V), and its output reference voltage due to temperature changes produced by the maximum test power ΪΓ 5 microvolts (mv); if the temperature range between 3G ° C ~ boots, the difference between the value of the difference is about _6 volts (V) 'And its output _ due to temperature changes, the maximum variation is 0.8 microvolts (mV), the ship output has reached a stable compensation effect 13 201104381 = 2: shown as the measured output of the circuit chip The electricity source is supplied by the electric dust as the system, and the wire is used to supply the power supply. (4) The ninth figure shows the output of the reference chip of the circuit chip. The results of the rc_ job __, the wire (4), the electric output of the $ / - circuit is quite stable, and the compensation effect has been achieved. . Pick up. Referring to the tenth figure of the month, the implementation of the operational amplifier circuit with the N-type differential input used in the present invention is performed by a mirror (four) amplifying circuit, an output amplifying circuit p, ^tfM(M6〇1) ^ ^ - Yang Xiaodian crystal (deleted 2), - the first cut type half field effect transistor (Lion 3), (deleted 5) material ^ oxygen effect transistor (touch 4) and material II N type recorded half field effect transistor ==The domain of the object, like the singularity of the transistor, the second source, the first 牮-gate, and the electrical input to mh —, 1 base (B〇dy), the ^ chick The first gate of the hybrid nine-dimensional gold-oxygen half-field effect transistor (Μ602), the third secret of the eighth-type gold-oxygen half-field effect transistor (Μ6〇ι), and the tenth-type gold oxide half-Chen The third secret, the second source and the thin substrate are connected to the power supply, and the second and the second are electrically connected to the eighth. Type MOS half-field effect transistor, the ninth ρ-type gold-oxygen half-field effect transistor (deleted 2) - the gate and the effect (_3) also the 嫩 嶋 嶋 half-field effect electricity 曰 〇 ) 2) Including - first closed pole, one second source, one third pole and - fourth body (Body) H gate at the same time _ _ small gate 敝 her (four) purchase ==== pole 'the second source The pole and the fourth substrate are electrically connected to the positive terminal (I) of the power source, and the third secret is simultaneously connected to the eleventh N-type gold-oxygen half field effect transistor (the third step of the sentence is deleted, No. 201104381 - p-type gold oxygen half-field effect electric crystal Xiangna) - the second source of the interpole and the five-p-type gold-oxygen half field effect transistor (M_RC); the tenth N-type gold oxygen half-field effect The crystal (M(4) includes a first gate of the first gate, a third drain and a fourth body, the first gate is electrically coupled to the edge-boost resistor (Ra(10) first end (vin_) The second source and the fourth base time are electrically connected to the second source of the tenth-N-type metal oxide half field effect transistor (brain 4) and the twelfth type n-type gold oxygen half-field effect The third pole of the transistor (M6〇5), the third and the pole, the electrical lightly connected to the eighth p-type gold oxide The first secret and the third secret of the field effect transistor (deleted 1); the tenth transistor (deleted) includes - the first-question pole, the second source, the third record and the fourth base: (Body The first gate is electrically coupled to the first end (four) of the second boosting resistor (Ra2), and the second secret and the fine base system are electrically connected to each other. The second source and the twelfth N-type gold 氡 half-field effect electric crystal Xiangna) third _, the third immersion is simultaneously electrically secret to the ninth P-type MOS half-effect f crystal (touch The second gate of the king plutonium, the fifteenth p-type gold oxide half field effect transistor (M_Rc) and the thirteenth p-type gold oxide half field effect transistor _) 6); the first busy N The type of Wei half-field electric crystal is the first pole, the second source, the third pole and the fourth base (B〇dy), and the first closed pole is electrically connected to the first base. a bias voltage (ν_ and the first gate of the fourteenth N-type gold-oxygen half field effect transistor (purchased 7), the second source and the fourth substrate are simultaneously electrically reduced to the ground, the third thief At the same time, the second source and the eleventh n-type gold-oxygen half-field electric power are electrically transferred to the tenth N-type gold-oxygen half-field effect transistor (ugly 3). The second source of the body (M604). The output magnifies the electric work material, the three-P meal oxygen half-field effect electric crystal face 6) and the fourteenth N-type gold oxygen half-field effect transistor (office 7) isoelectric crystal The neon connection is screamed; wherein the thirteenth P-type metal oxide half-field effect transistor _6) includes a first-idle pole, a first pole and a fourth base (B〇dy), and the first gate is simultaneously Electrically lightly connected to the ninth p-type gold oxide half: the third secret of the effect transistor peak] 'the eleventh N-type gold oxygen half field effect transistor _ sentence of the 15th 201104381

_ Three Secrets, five materials, p-type casting, "crystal __&" bungee, the second source of earth-bottom electricity J. Sheng lightly connected to the positive end of the power supply (D 'in terms of the third, the second is not the same, then the electrical Lightly connected to the first end of the younger-compensating capacitor (Ce), the first end of the fourth-type gold-oxygen half-effect transistor (10), the fifth-P-type half-field effect f crystal_the first gate And the scale of the fourteenth N-type gold oxygen half two ^ electric body (deleted 7) of the third and pole. The fourteenth N-type metal oxide half field effect transistor (M6〇7) includes a first gate, a second source, a third and a fourth substrate (B. cut, the first idle pole The power-receiving reliance on the side of the type of gold oxygen half-field effect transistor (the first cerebral palsy - the gate, the second source and the fourth base money _ touch power _ ground end (Μ, _ third secret while electrical The first gate of the first compensation capacitor (Ce), the first gate of the first cardiac type MOS field, and the fifth P-type MOS half-effect transistor (M2) - the gate and the third nothing of the thirteenth p-type gold-oxygen half-field effect transistor (deleted 6). / rhythm circuit system - the fifteenth P-type gold-oxygen half-field effect transistor (M_RC) and - first _ 1 consisting of electrical connections of the (four) granules; wherein the fifteenth p-type oxy-half field effect (4) includes - the first -, the second source, the third secret and the fourth base (B kiss) The gate electrode is connected to the ground terminal, and the second source is electrically connected to the ninth P (four): the third bet of the flute = electric day body (fine 2), the tenth - (four) gold oxygen half field effect Transistor (Na, not the traitor three) money half-time power (four) (M_) U pole, the third: job reduction to the first - compensation a second end of the capacitor (Ce), the fourth substrate is electrically connected to the lag; the first compensation capacitor (Ce) includes a first end and a second end, and the first end is simultaneously connected with the thirteenth P-type gold The third half of the oxygen half-field effect transistor (Na 6), the first gate of the fourth p-type phenotype 4 (Μ1), the fifth pole of the fifth ρ-type MOS and the transistor The fourth difficulty of the fourteenth N-type gold-oxygen half field effect transistor _7) is lightly connected to the third step of the fifteenth p-type MOS field-effect transistor (M-Re). The formula of the d reference current of the invention is firstly assumed. First, it is assumed that the transistors of 201104381 in the third figure are all ideal, the transistors 1VH, M2 and M3 are the same, the resistances Ral and Ra2 are the same, and the resistances Rbl and Rb2 are the same. The positive and negative inputs of the amplifier are virtual short circuits (Vin+ = Vin-), then

Vebi = VEB2+ Vr2................................................ ..(Formula 1) iRbl = lRb2...................................... ..................(Formula 2) iRal = lRa2......................... ...............................(Formula 3) lRa2 = lRb2 + IR2.... ................................................. Equation 4) Taking (Formula 4) as an example, the change in temperature (T) is ^Ra2 _ ^Rb2 | ^R2 dT — dT dT .................. .......................(Equation 5) Since 1 - VEB|/Rb2 and IR2 = (VEB1-VeB2)/R2 ' can be known 1 is a negative current temperature coefficient, and there is an adjustment factor Rb2; similarly, Ir2 is a positive current temperature coefficient, and there is an adjustment factor R2. By adjusting the adjustment factor, "the temperature change value of Ir2 can be canceled, and the current IRa2 irrelevant to the temperature change is obtained, via the fifth p-type gold-oxygen half-field effect transistor (M2) and the seventh p-type gold-oxygen half-field effect. A current mirror composed of a transistor (M4) mirrors the current lRa2 to the output current to obtain a reference current (iref) independent of the temperature change. Please refer to the third ® 'Vrcf' of the present invention. After adding a boost resistor (Ra3), you can get vref = Ir33 X Ra3 + VBE3. The change in temperature (T) is dwR^dw f/

Ra3

, dV^ dT dT (Equation 6) (Equation 7) where IRa3 is the reference current irrespective of temperature change (total, resistance r temperature coefficient of resistance, and third bipolar junction electro-crystal clear) The voltage is the negative voltage temperature coefficient _3 / (four)); borrowing the domain #地海~心的值, can be obtained according to the temperature change irrespective 17 201104381 output reference voltage Vref. It is worth noting that all the boost resistors series Bo compensation resistors are required to use N-well resistors with higher temperature coefficients, while the seven-bias resistors require lower temperatures. N bribes away from + sulfur (four). In the following, the invention describes the specific description of the preferred embodiment, but it is not the case that the present month is limited to the profit of the person, the technical person M, the duck, without departing from the arsenic or feu of the present invention. Situation τ 'Linthe invention has undergone various improvements and variations. So if these changes

The present invention encompasses these improvements and variations, directly or indirectly, within the scope of the claims and their equivalents, and is incorporated herein by reference. Further, in order to make the present invention more progressive and practical, the advantages of its implementation are listed as follows: 1. The present invention is provided with a start up circuit composed of three components, when the difference reference circuit is used During normal operation, the startup circuit enters a shutdown state and does not affect the normal operation of other circuits; the number of components of the startup circuit is small, and has the advantages of simple architecture, power saving, and fast startup. 2. The present invention has an output and temperature change without a reference voltage and a reference current, which can expand the application range of the present invention, improve the added value of the present invention, and has the advantages of miniaturization. The invention has a better temperature compensation function. The output value of the reference voltage can be made relatively stable' and can work at a low voltage, reducing power consumption, having a energy-saving effect, meeting the actual needs of the industrial and commercial circles or the industry, and having industrial utilization value. In summary, the present invention has achieved the desired effect under the prior art structure, and it is also considered by the county to be considered by the general artist; further, the invention is progressive and practical. The invention has been filed in accordance with the "requirements" of the invention patent. 201104381 [Simple description of the diagram] The first diagram is the basic architecture diagram of the conventional reference circuit with low difference. The second diagram is the conventional low voltage difference reference circuit. The second diagram is a circuit implementation diagram (representative diagram) of the present invention. The fourth diagram is a voltage output waveform diagram of the startup circuit of the present invention. The fifth diagram is a current rotation waveform diagram of the startup circuit of the present invention. The figure is a waveform diagram of the age of the reference voltage turn-off versus temperature change of the present invention. The seventh figure is the result of the reference voltage versus temperature change of the present invention. The eighth figure is the reference of the present invention. The result of the voltage-to-power supply voltage is shown in Fig. 9. The ninth figure is the reference of the present invention. The tenth figure is the differential input of the operating amplifier of the present invention. Circuit implementation [Main component symbol description] Low voltage band difference reference circuit...200 Gold oxide half-effect transistor.............. Bipolar junction transistor... .............. Resistance................. f difference reference circuit.............. .......300 Reference Current Circuit.....................2 First P-type Gold Oxygen Half Field Effect Crystal...Mp Third N Type gold oxide half field effect transistor...Μη The fifth type of gold oxide half field effect transistor...M2 The seventh type of gold oxide half field effect transistor...Μ4 The first step-up resistor... ...............Ral Operational Amplifier..................A201 ............. ...............M201, M202, M203 .................................... ..........Q201, Q202 R201, R202, R203, R204, R205, R206 start circuit........................ .... Reference voltage circuit.....................3 Second P-type gold-oxygen half-field effect transistor...Ms Fourth P-type gold-oxygen half-field Effect transistor...Ml sixth P-type gold oxygen half field effect transistor...M3

N-type input operational amplifier...〇PA second boosting resistor....................... 201104381 Second boosting resistor.. ...................Ra3 Fourth compensation resistor..............,"···Rbl Fifth compensation resistor. ................................Rb2 sixth compensation resistor....................Rb3 seventh bias resistor.. ....................R2 first bipolar junction transistor.................Q1 second bipolar junction transistor... .. •.....Q2 No.=Bipolar junction transistor.................Q3 Power supply positive terminal.................. .....Vdd Ground of the power supply....................Vss Reference current................ ..... .......Iref Reference voltage ..........................vref First compensation capacitor........ ....... ......Cc bias voltage.....................600

• M601 • M602 • M603 • M604 • M605 • M606 • M607 • M Rc Operational Amplifier with N-Type Differential Input - Eighth P-type Gold Oxygen Half Field Effect Transistor···* Ninth P-type Gold Oxygen Half-Field Effect Crystal...· The tenth N-type gold-oxygen half-field effect transistor...· The eleventh N-type gold-oxygen half-field effect transistor · The twelfth N-type gold-oxygen half-field effect transistor · The thirteenth P-type gold-oxygen half-field effect transistor · Fourteenth N-type gold oxygen half field effect transistor · Fifteenth P-type gold oxide half field effect transistor · 20

Claims (1)

201104381 VII. Patent application scope·· 1. A differential reference circuit with a start-up circuit and capable of providing temperature-independent, characterized in that it is composed of a start-up circuit and a reference voltage circuit; And referring to the start-up circuit, having two p-type field effect transistors and a body connection, and is turned off after starting the band difference reference circuit; i reading the reference current circuit described by the cell, having three types The differential wheeled operation is amplified and written, 1 ~ transistor, - N - (4) resistance, 2nd charge, resistance and two bipolar junction transistors, etc., : Irrelevant reference current ; and the difference between the * and the degree of change 2, Xia Caicai, with - distinguishing type Wei Qian green, a n-turned operational amplifier, three boost resistors, three compensation resistors and three bipolar junction transistors It is composed of a new connection, which can be used to convert an unrelated reference voltage. /, 'The degree of change 2 · Such as the application of patents Capricorn! A difference reference circuit having a start-up circuit and simultaneously providing a reference current and a reference voltage that is temperature-dependent, wherein the start-up circuit includes a first p-type MOS field effect transistor and a second P-type MOS field The utility model and the third N-type gold oxide effect transistor HP type gold oxide half field effect transistor include a -th gate, a second source, a third secret and a fourth substrate, the first gate The pole is electrically connected to the output end of the N-type differential input, and the second source and the fourth substrate are electrically connected to the positive end of the power source, and the third pole is electrically connected to the power supply. a first-gate terminal of the second p-type MOS field-effect transistor; the second P-type MOS field-effect transistor includes a first gate 曰, 曰 - first source, third drain and _ a fourth substrate, the first gate electrode is electrically connected to the third P-type metal oxide half field effect transistor, and the second source and the fourth substrate are electrically coupled to the front end of the power supply. The third and the pole are electrically connected to the negative input terminal of the operational amplifier of the N-type differential input; the third: ^-type gold oxygen half field The utility transistor includes a first idle electrode, a second source, a third drain and a fourth substrate, and the first idler, the second source and the fourth base are mixed to the power supply. And the third secret is electrically consumed to the third extreme of the first p-type MOS half-effect transistor. 3. A band difference reference circuit having a start-up circuit and capable of simultaneously providing a temperature-independent reference current and a reference voltage, as described in claim i, wherein the reference current circuit includes a fourth P-type MOS half-field effect Transistor, fifth!> type gold oxide half field effect transistor, seventh p type gold• oxygen half field effect transistor, N type differential input operational amplifier, first step-up resistor, second step-up resistor, a fourth compensation resistor, a fifth compensation resistor, a seventh bias resistor, a first bipolar junction transistor, a second bipolar junction transistor, etc.; the fourth p-type gold oxide half field effect transistor includes a -first a gate, a second source, a third drain, and a fourth substrate, the first gate electrically coupled to an output of the N-type differential input operational amplifier, the second source 4 The base is electrically connected to the positive end of the power supply, and the third drain is electrically connected to the third terminal of the second P-type MOS field-effect transistor and the operation of the N-type differential input. An input terminal; the fifth p-type MOS field effect transistor includes a -th-gate/first-source...second bungee a thin substrate, the first gate is electrically reduced to an output of the operational amplifier of the N-type differential input, and the second source and the fourth substrate are electrically connected to the positive terminal of the power supply, and the third secret The second p-type MOSFET has a first gate, a second source, a third drain and a a fourth substrate, the output end of the operational amplifier of the first differential current input, the second source and the fourth substrate are electrically connected to the positive end of the power source, and the third pole is Electrically connected to the electrical readout end of the reference current circuit; the N-type differential input operational amplifier includes a negative input terminal, a positive electrode 22 201104381 2 into the knowing and output terminals, and the negative input terminal simultaneously Sex _ to the second p-pole MOS half-field power • 'type MOS half-battery positive input at the same time electrically connected to the fifth 之 body threshold, fifth and seventh p-type gold oxygen half-field effect The crystal armor % ' boost b resistance includes the first end and the second end, and the tilt is connected to the negative pole of the front differential input The human terminal ^== the electrical energy is lightly connected to the first end of the fourth compensating resistor and the first bipolar junction electrical body = the second emitter extreme; the second resistor includes the first end and the second end The first:: is connected to the positive input terminal of the 4 N differential input operational amplifier, and the second terminal is electrically connected to the first end and the seventh bias resistor of the fifth compensation resistor. The first-second and second-four compensation resistors include a first end and a second end, and the first end is simultaneously electrically 2 to =: the boosting resistor (four) two-end money--the second emitter of the bipolar junction f crystal The second end of the second end of the resistor is electrically connected to the second end of the second rising resistor and the seventh bias voltage and the second end is grounded; the seventh resistance is Including the first end 盥 the first = electric = 2 _ _ _ _ second boost power _ second end and the fifth second end ' while the second end of the § Hai is electrically connected to the second bipolar junction One of the transistors...the first-bipolar junction transistor includes a first base, a second emitter and a third collector. The first-base is electrically coupled to the second bipolar The junction and junction of the junction transistor, The second end of the second brain_纽婶-赵杂 == the first end of the resistance, and the third collector is grounded; the second _ 4 ray, L + first base, - the fourth pole and one a third collector, the first base is the same, and is connected to the first base and the ground end of the first bipolar junction transistor, and the second emitter 23 f S] 201104381 is electrically connected to the seventh bias The second end of the resistor is grounded, and the third collector is grounded. 4. If the application of the circuit is as described in the application of the patent, and the reference current and the reference cage are not related to the whistling and temperature reference, the reference reference circuit contains: P-type MOS half-field power Crystal, fifth p-type gold-oxygen half field effect transistor, sixth p-type gold-rolled half field effect transistor, N-type differential input operational amplifier, first boosting resistor, second boosting resistor, third boosting resistor a fourth compensating resistor, a fifth compensating resistor, a sixth compensating resistor, a seventh biasing resistor, a first bipolar junction transistor, a second bipolar junction transistor, and a third bipolar junction electro-crystal; The thin p-type half field effect power edge includes a first interpole, a second source, a third secret and a fourth base, and the first gate is electrically connected to the N-type wire input operation. At the output end of the amplifier, the second source and the fourth substrate are electrically connected to the positive terminal of the power supply, and the third wire is electrically tilted to the third secret end of the second p-type MOS field-effect transistor. And a negative input terminal of the N-type differential input operational amplifier; the fifth p-type gold-oxygen half field effect transistor includes a -th-gate a second source, a third and a fourth substrate, the first gate is electrically difficult to the output of the N-type differential input operational amplifier, and the second source is connected to the thin source To the positive of the power supply and the third miscellaneous market domain N-type wire input conversion to the positive input terminal, the sixth P-type gold oxygen half-field effect transistor includes - the first job, the second a source, a U-pole, and a fourth substrate, the first------the operation of the differential input connected to the front-type differential input, H (the fourth), the second-level and the fine-grained to the positive end of the power supply, and the The third gambling is the reference to the secret end of the dragon output. · mm view wall coffee turn to the human end and the output point 'the negative input terminal simultaneously electrical _ to the second p-type gold oxygen half of the third difficulty, the Fine p-type gold financial field effect _ the third secret end and the second liter house resistance H, red and green Jian Shi Na i P financial oxygen half-field effect 201104381 = the third ΤΠ pressure resistance of the first end, lose _ at the same time electric coffee to Budi Fourth, the fifth and seventh type of gold-oxygen half-field effect transistor, the first step-up resistor includes a first end and a second end, the negative input of the operational amplifier of the delta type differential input Drink=Electrical turn==The first end of the resistor and the first-dipole junction transistor:= 鳊, the second boost resistor includes a first end and a second end, the N-type differential The input op amp is clean and lightly connected to the uncle _ % A '^ The second end is simultaneously electrically ^ to the fifth side - the paste is increased by the fourth compensation = the resistance includes the first end and the second End, the second end of the first _ terminal is connected to the second end of the first bipolar junction transistor - the fifth compensating resistor comprises a second end of the first end, the first side New 2 is connected to the second end of the second boosting resistor and the first end of the seventh biasing resistor, and the sixth compensating resistor has a first end and a second end, the first end steel The first end is lightly connected to the second end of the third boosting resistor and the third end of the third bipolar junction transistor, and the second end is grounded; the seventh biasing resistor includes the first The second end of the end plate is connected to the second end of the second electric pole and the second end of the second electric pole. The extreme of the t-shot, the first-bipolar junction The crystal includes a first base, a second emitter, a second collector, a second base, and a second base. The second base is electrically connected to the base and the ground of the second bipolar junction transistor. The second electrical end of the first boosting resistor is connected to the first end of the fourth compensating resistor, and the third collector is grounded; the second bipolar junction "includes the first base" a second emitter and a third collector, the first base is electrically coupled to the first base and the ground of the first bipolar junction transistor, and the second emitter is electrically connected To the second end of the seventh resistor, and the third collector is grounded; the third bipolar 25 [S1 201104381 junction electric a body includes a first base, a second emitter and a third collector The first base is grounded, and the second emitter is electrically coupled to the second end of the three boost resistors to complement the first end of the resistor, and the third collector is grounded. 5. The reference current circuit having a start-up circuit and capable of simultaneously providing a temperature-independent reference current and a reference voltage, as described in claim 3, wherein the fourth compensation resistor, the fifth compensation resistor, and the sixth compensation resistor are In order to generate a negative current temperature coefficient, the positive current temperature coefficient generated by the base potential difference between the two bipolar junction transistors can be easily canceled to obtain a reference current irrespective of the temperature change. ^ 6. The reference voltage circuit with the start-up circuit and the temperature-independent reference current and reference reference as described in claim 4 of the patent scope, the cap-boost resistor and the second boost resistor The input voltage of the positive input terminal of the operation plane A|| of the N-face input and output unit; and the third reference voltage of the reference current which is independent of the temperature change due to the flow of the third boost current_current The electric_cross-technical positive voltage temperature coefficient can be used to compensate the base voltage of the third bipolar junction transistor (4) voltage temperature coefficient, and obtain the reference electric dust irrespective of the temperature change. 7. A reference voltage circuit having a start-up circuit and simultaneously providing a temperature-independent reference current and a reference voltage as described in claim 4, wherein the operational amplifier having an n-type differential input is mirror-amplified The circuit, the output amplifying circuit and the compensation circuit are twisted. The mirror amplification circuit comprises an eighth P-type gold-oxygen half-field effect transistor, a ninth-type gold-oxygen half-field effect transistor, a tenth N-type gold-oxygen half-field effect transistor, and an eleventh N-type gold oxide. The half field effect transistor is electrically connected with the twelfth N-type gold oxygen half field effect transistor isoelectric crystal; wherein the eighth P-type gold-oxygen half field effect transistor comprises a first _ interpole and a second a source, a third drain, and a fourth substrate, wherein the first interpole is electrically coupled to the first gate of the ninth P-type metal oxide half field effect transistor, and the eighth p-type gold oxide half field The effect of the crystal 26 201104381 ^ two recorded and the tenth N-type gold oxygen half-effect transistor third secret, the second source and the outer four base _ connected to the positive end of the power supply, and the third reward At the same time, the electricity is secret to the younger eight p-type recorded half-field electric power of the first - gate, 郷 ρ ρ body first closed and the tenth 金 type of gold oxygen half-effect transistor third pole; Dijon County yam yang effect transistor includes - the first - _, - the second source, - the third and the pole = ___ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ To the positive end of the power supply, and at the same time, the third secret of the tenth-thin-type gold-oxygen half-field effect transistor, the first gate of the tenth-type gold-oxygen half-field effect transistor, and the fifteenth Ρ 录 半 半 苐 杂 杂 杂 杂 杂 杂 杂 杂 杂 杂 杂 杂 杂 杂 杂 杂 杂 杂 杂 杂 杂 杂 杂 杂 杂 杂 杂 杂 杂 杂 杂 杂 杂 杂 杂 杂 杂 杂 杂 杂 杂 杂 杂 杂Electrically lightly connected to the first resistor 7 first, the second source and the fourth base time electrical_to the tenth-N type first body of the first body and the twelfth type n-type gold half field The effect of the electric crystal -=Γ 狮 接 vp-type field effect transistor, the second pole = the pole; r tenth-n-type gold oxygen half-field effect transistor includes - the first - closed a bucket /, and a fourth substrate electrically coupled to the transimpedance (four) terminal, the second source and the second source of the fourth substrate transistor and the twelfth-gold oxide half = one. , & the second source fish of the golden oxygen effect transistor: + one oxygen = 7,: one type of gold oxygen ~ - the gate first - the source, the third secret and the fourth base, the first idle Extremely new _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ The second and the thin base are simultaneously connected to the tenth N-type gold-oxygen half-field ground, and the tenth-the second source of the aerobic half-field effect transistor. _=Electric=Pole and ^type gold oxygen half-view crystal _-The first cut (four) gold oxide material is composed of the electrical connection of the body, · Among them, the thirteenth p-type = 曰曰 first gate, - The second source, the #第一电电体 includes - electrical p] ^ substrate, the first gate is simultaneously converted to the fifth P ninth P-type MOS half-effect transistor, the third pole, a first source of ten _N, the first primary pole and the fourth base are electrically connected to the electrical three-pole, and the electrical_to the first end of the first compensation capacitor, the first The first cut (four) recorded the effect of the electric crystal. The half field effect transistor includes a first first pole and a second secret; a fourteenth N-type gold oxygen bottom, the first gate is electrically coupled to the N-di and a fourth-based ^ The tenth type of gold-oxygen half-field effect transistor is connected to the grounding end of the power supply of the fourth substrate, and the drain is electrically coupled to the flute of the first field effect electric power - „ One end of the brother, the fourth P-type gold oxygen half of the thirteenth day 2 draws (four) the first question of the oxygen and the second "oxygen half-effect transistor third secret. The compensation circuit consists of - The fifteenth = gold oxygen body and - the first - capacitor and other components of the new connection; the pole and - brother four base, the first gate is electrically connected to the ground, the piano: the same (four) wire _ ninth p-type recording effect electric hybrid second pole: the third secret of the oxygen half-field effect transistor and the thirteenth p-type gold oxide package bungee, the third _ electrical woman to the first - compensation The second 28 of the capacitor 201104381 end 'the fine base Lai New_ to electricity _ positive end; the first - supplement: the first =:ι__,, the second brother of the gold oxygen body, material four P financial field _ crystal = oxygen half field fiber (4)-_Tear... 尔场= ―和极, Reduced pin ends New Catalog p five three field effect power drain. Le & as claimed in claim i, having a start-up circuit and simultaneously providing a temperature-independent reference reference reference circuit, the auxiliary resistor and the compensation resistor are N-type wells (N_wdl) It is made to have a higher temperature coefficient; and the bias resistor is made of an N-type diffusion region (n+_di hesi〇n) with a lower temperature coefficient.