TW201042667A - Transparent conductive film structure and display device thereof - Google Patents

Transparent conductive film structure and display device thereof Download PDF

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Publication number
TW201042667A
TW201042667A TW98117013A TW98117013A TW201042667A TW 201042667 A TW201042667 A TW 201042667A TW 98117013 A TW98117013 A TW 98117013A TW 98117013 A TW98117013 A TW 98117013A TW 201042667 A TW201042667 A TW 201042667A
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Taiwan
Prior art keywords
transparent conductive
conductive film
layer
reflectance
substrate
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TW98117013A
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Chinese (zh)
Inventor
zheng-jie Zhang
xiu-feng Liu
Bi-Rui Guo
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Innovation & Infinity Global
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Priority to TW98117013A priority Critical patent/TW201042667A/en
Publication of TW201042667A publication Critical patent/TW201042667A/en

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Abstract

A transparent conductive film includes a substrate and a multi-layer film on the substrate. The multi-layer film has a reflection-matching layer on the substrate, and a transparent conductive layer on the reflection-matching layer. By adjusting the thickness and the refractive index of the reflection-matching layer, the difference between the reflection rate of the etched area and the non-etched area is decreased. Therefore, the defects formed in the etching process can not be seen so that the image device can display images with high quality.

Description

201042667 六、發明說明: 【發明所屬之技術領域】 •本發明係有關於一種透明導電膜層結構及其顯示設 備,尤指一種可提高影像品質之透明導電膜層結構及其顯 不設備° 【先前技術】 ^ 隨著製作技術的進步與各種應用面的不斷擴展,電子 產品也逐漸提供越來越多樣化的功能以及高整合性的使 用性,以方便使用者的操作。例如,為了提供使用者更為 方便、更為直覺的控制電子用品,目前電子資訊產品已越 來越廣泛的裝設有觸控式的顯示面板,以取代傳統的按鍵 形式的控制按鈕。 目前,觸控面板大致上可區分為電阻式、電容式、紅 外線式及超音波式等等形式的觸控面板,其中以電阻式觸 ❹ 控面板與電容式觸控面板為表常見的產品。以目如的應用 面而言,電容式觸控面板可應用於多點觸控的特性,以提 供更人性化的操作模式,而使得電容式觸控面板逐漸受到 市場與使用者的青睞。不過,電容式觸控面板的缺點在於 其必須以導體材質,例如手指觸碰觸控面板以進行電子產 品的操作。而以電阻式觸控面板而言,無論使用者以何種 • 材質觸碰觸控面板,都可以進行電子產品的操作與控制, ' 因而提高了觸控面板的使用便利性。另外,電阻式觸控面 板所需成本較低,且電阻式觸控面板的技術發展較為成 3 201042667 …因而目μ的中階產品線大多使用電阻式觸控面板。 、傳統的觸控面板係直接在玻璃基板表面上 透明導電膜,藉由觸碰該透明導電膜, 感測觸控位置等功能。 逐㈣人心虎或 然而’料明導電膜必須經過黃光顯影、餘刻的製 私’以在其上得到線路圖率,笋 ^ :在製程的實務上,二 二Γ:導電膜層上形成具有階差的結構;而在; =電膜之間的具有很大的反射率差異,會在 =的落^屮因此在使用者的視覺上會造成不心 出現明顯的界線等等,因此造成電子產二ί 計人=有=人有感上述缺失之可改善,提出―種, t 口理且有效改善上述缺失之本發明。 種。又 f發明内容】 本發明之主要目的,在於提供一曾 構,該透明導電膜層姓M 透月泠電臈層結 之間的反射㈣敕r 成於基板與最外層之結構 厚度的闕係進行反射率的調整 折射率與 間的顯色差異,使肉眼無法察而核不同區塊之 進而提高光學上的顯示效果:見衣w所殘留下的痕跡’ 201042667 . 為了達成上述之目的,本發明係提供一種透明導電膜 層結構,其包括一基板以及一成型於該基板上之多層膜結 構,該多層膜結構係由最接近該基板起算之一反射率調整 層及一透明導電膜所組成;其中,該反射率調整層係位於 該基板上,該反射率調整層係為折射率較該基板為低之化 合物;該透明導電膜係位於該反射率調整層上;該透明導 電膜層結構在蝕刻後,該透明導電膜層結構的被蝕刻部分 之反射率係與未被蝕刻部分之反射率相近。 本發明亦提供一種使用上述透明導電膜層結構的顯 示設備,藉由上述透明導電膜層結構的反射率調整層的作 用,使得該透明導電膜層結構之顯示面的色彩均一,而該 顯示設備可具有較佳的顯像效果。 本發明具有以下有益的效果:本發明利用反射率調整 層調整該透明導電膜的反射率,以使該透明導電膜層結構 之蝕刻部分與未蝕刻部分具有相近的反射率,藉由控制不 Q 同區塊之間的反射率落差,使蝕刻製程所殘留下的痕跡不 易被觀察到,進以提供較佳的影像品質。 為使能更進一步瞭解本發明之特徵及技術内容,請參 閱以下有關本發明之詳細說明與附圖,然而所附圖式僅提 供參考與說明用,並非用來對本發明加以限制者。 【實施方式】 請參閱第一圖,本發明係提供一種透明導電膜層結構 1,該透明導電膜層結構1可利用調整表面反射率的原 理,以降低蝕刻部分與未蝕刻部分的反射率落差,進而達 5 201042667 到降低顯色的落差,以使蝕刻製程後的痕跡在光學上較不 易被肉眼所觀察到,使本發明之透明導f膜層結構丄能具 有較佳的影像品質。該透明導電膜層結構丄包括一基板1 0以及-成型於該基板i 〇上之多層膜結構2Q多層 膜結構2 0包括有反射率調整層2 i及―透明導電膜^ 2 ’、而該反射率調整層2丄與該透明導電臈2 2係為依序 地成型於該基板1 〇上,換言之,由最接近該基板丄〇之 結構起算,依序為該反射率調整層2 i與該透明導電膜2 yj E7 该反射率調整層21與該透明導電膜22 具備有特殊的排列態樣,以使各膜層之折射率變化達 述之降低表面反射率之落差的效果,進而使㈣製程 ,跡無法被肉眼所觀測到。因此以下將詳細說明各膜声的 折射率關係及厚度等相M參數,其中 ^ 基板1〇上,該反射率調整層二= 二;二化合物;該透明導電膜2 2係位於該 光;:r電膜2 2係為-種具有 表1係為本發明之具體實施例 實施例態樣,但並Μ下述實施方式2叫出二個 201042667 表1 實施例 層別 材料 厚度(A) ㈠ 透明導電膜 ΙΤΟ 180 反射率調整層 Si02 700 (二) 透明導電膜 ITO 180 反射率調整層 MgF2 800 (三) 透明導電膜 ITO 180 反射率調整層 Si02+MgF2 750 以下將說明本發明之第一實施例。在第一具體實施例 ❹ 中,該基板1 0係為玻璃/PET材質,但不以上述為限,例 如該基板1 0可為塑膠板,例如材質為PC、PMMA、PET、 ARTON等等;或者該基板1 〇可為玻璃材質,而以玻璃 材質的該基板1 0為例,該基板1 0的折射率係為1.52。 另外,該反射率調整層2 1的折射率係為1.42至 1.46,換言之,該反射率調整層2 1的折射率低於該基板 1 0的折射率。又,該反射率調整層2 1的材質係為一種 氧化物、氟化物或氧化物與氟化物之組合,而在本具體實 Ο 施例中,該反射率調整層2 1的材質係為一種氧化物,例 如Si02,且Si02材質之該反射率調整層2 1的膜層厚度 係為700埃。 最外層的該透明導電膜2 2可以為Sn02、Zn02、 In203或ITO等材料所製成,且該透明導電膜的膜層厚度 係為130至200埃。本具體實施例之透明導電膜2 2的材 # 質係為ΙΤΟ,且ΙΤΟ材質之該透明導電膜2 2的膜層厚度 係為180埃。但透明導電膜2 2係為表面層,其可為任一 種透明導電膜,並最佳地具有1.9至2.1之高折射率。由 7 201042667 於上述之透明導電膜2 2具有導電性,此膜層結構在應用 時可以減化接地過程並且提高製程良率,且由於透明導電 膜2 2為導電層,電極可以很容易地形成於該透明導電膜 2 2上,故本發明尤其有利於觸控式顯示單元之應用,但 不以此為限。 ^ — 請復參考表1,其中第二實施例與第一實施例不同之 處在於該反射率調整層2 i的材質係為—種氟化物,例如201042667 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to a transparent conductive film layer structure and a display device thereof, and more particularly to a transparent conductive film layer structure and an apparent device thereof capable of improving image quality. Prior Art] With the advancement of production technology and the continuous expansion of various application areas, electronic products are gradually providing more and more diverse functions and highly integrated usability to facilitate user operations. For example, in order to provide users with more convenient and intuitive control of electronic products, electronic information products have been increasingly equipped with touch-sensitive display panels to replace the traditional button-type control buttons. At present, the touch panel can be roughly classified into a resistive, capacitive, infrared, and ultrasonic type touch panel, and a resistive touch panel and a capacitive touch panel are common products. For the purpose of application, the capacitive touch panel can be applied to multi-touch characteristics to provide a more user-friendly operation mode, and the capacitive touch panel is gradually favored by the market and users. However, the disadvantage of the capacitive touch panel is that it must be touched by a conductor material such as a finger to operate the electronic product. With the resistive touch panel, no matter what kind of material the user touches the touch panel, the operation and control of the electronic product can be performed, which improves the convenience of the touch panel. In addition, the cost of the resistive touch panel is relatively low, and the technical development of the resistive touch panel is relatively high. 3 201042667 ... Therefore, most of the intermediate product lines of the target use resistive touch panels. The conventional touch panel directly exposes a transparent conductive film on the surface of the glass substrate, and touches the transparent conductive film to sense functions such as a touch position. According to (4) people's heart or tiger, however, 'the conductive film must be subjected to yellow light development, the rest of the process of making private' to get the line map rate on it, bamboo shoots ^: in the practice of the process, the second layer: formation on the conductive film layer Structure with step difference; and there is a large difference in reflectivity between the electric films; it will fall in the =, so the user’s visual will cause unclear boundaries, etc., thus causing The electronic product produces two people = yes = people feel that the above-mentioned deficiency can be improved, and the present invention is proposed to improve the above-mentioned deficiency. Kind. Further, the main object of the present invention is to provide a structure in which the reflection between the transparent conductive film layer and the surface layer of the substrate and the outermost layer is The reflectance is adjusted to adjust the difference between the refractive index and the color difference, so that the naked eye can not observe the different blocks and further improve the optical display effect: see the traces left by the clothing w' 201042667. In order to achieve the above purpose, this The invention provides a transparent conductive film layer structure comprising a substrate and a multilayer film structure formed on the substrate, the multilayer film structure being composed of a reflectance adjusting layer and a transparent conductive film which are closest to the substrate. Wherein the reflectivity adjusting layer is on the substrate, the reflectivity adjusting layer is a compound having a lower refractive index than the substrate; the transparent conductive film is located on the reflectivity adjusting layer; the transparent conductive film layer structure After the etching, the reflectance of the etched portion of the transparent conductive film layer structure is close to that of the unetched portion. The present invention also provides a display device using the above transparent conductive film layer structure, wherein the color of the display surface of the transparent conductive film layer structure is uniform by the action of the reflectance adjusting layer of the transparent conductive film layer structure, and the display device It can have a better development effect. The present invention has the following beneficial effects: the present invention utilizes a reflectance adjusting layer to adjust the reflectance of the transparent conductive film such that the etched portion of the transparent conductive film layer structure has a similar reflectance to the unetched portion, and the control is not Q. The difference in reflectance between the same blocks makes the traces remaining in the etching process difficult to observe, thereby providing better image quality. The detailed description of the present invention and the accompanying drawings are to be understood as the [Embodiment] Referring to the first figure, the present invention provides a transparent conductive film layer structure 1 which can utilize the principle of adjusting the surface reflectance to reduce the reflectance difference between the etched portion and the unetched portion. And further up to 5 201042667 to reduce the drop of color development, so that the trace after the etching process is optically less visible to the naked eye, so that the transparent conductive film structure of the present invention can have better image quality. The transparent conductive film layer structure includes a substrate 10 and a multilayer film structure formed on the substrate i 2 2Q multilayer film structure 20 includes a reflectivity adjusting layer 2 i and a “transparent conductive film 2 2 ′′ The reflectance adjusting layer 2 丄 and the transparent conductive 臈 2 2 are sequentially formed on the substrate 1 ,, in other words, from the structure closest to the substrate ,, the reflectance adjusting layer 2 i and The transparent conductive film 2 yj E7 has a special arrangement pattern between the reflectance adjusting layer 21 and the transparent conductive film 22, so that the refractive index change of each film layer reaches the effect of reducing the difference in surface reflectance, thereby further (4) Process, traces cannot be observed by the naked eye. Therefore, the refractive index relationship and the thickness and other phase M parameters of each film sound will be described in detail below, wherein the substrate is 1 〇, the reflectance adjusting layer is 2 = 2; the second compound; the transparent conductive film 2 2 is located in the light; r electric film 2 2 is a type having a table 1 is an embodiment of the specific embodiment of the present invention, but the following embodiment 2 is called two 201042667 Table 1 embodiment layer material thickness (A) (1) Transparent conductive film ΙΤΟ 180 Reflectance adjusting layer SiO 2 700 (2) Transparent conductive film ITO 180 Reflectance adjusting layer MgF2 800 (3) Transparent conductive film ITO 180 Reflectance adjusting layer SiO 2 + MgF 2 750 The first embodiment of the present invention will be described below. example. In the first embodiment, the substrate 10 is made of glass/PET, but not limited to the above. For example, the substrate 10 may be a plastic plate, for example, PC, PMMA, PET, ARTON, etc.; Alternatively, the substrate 1 may be made of glass, and the substrate 10 made of glass is taken as an example. The refractive index of the substrate 10 is 1.52. Further, the refractive index adjusting layer 21 has a refractive index of 1.42 to 1.46. In other words, the refractive index of the reflectance adjusting layer 21 is lower than the refractive index of the substrate 10. Further, the material of the reflectance adjusting layer 21 is an oxide, a fluoride or a combination of an oxide and a fluoride, and in the specific embodiment, the material of the reflectance adjusting layer 21 is a kind An oxide such as SiO 2 and a thickness of the reflectance adjusting layer 21 of the SiO 2 material are 700 Å. The outermost transparent conductive film 2 2 may be made of a material such as SnO 2 , ZnO 2 , In 203 or ITO, and the transparent conductive film has a film thickness of 130 to 200 Å. The material of the transparent conductive film 2 2 of the present embodiment is tantalum, and the thickness of the transparent conductive film 22 of the tantalum material is 180 angstroms. However, the transparent conductive film 22 is a surface layer which may be any transparent conductive film and preferably has a high refractive index of 1.9 to 2.1. The transparent conductive film 2 2 described above has conductivity from 7 201042667, and the film layer structure can reduce the grounding process and improve the process yield when applied, and since the transparent conductive film 22 is a conductive layer, the electrode can be easily formed. The present invention is particularly advantageous for the application of the touch display unit, but is not limited thereto. ^ - Please refer to Table 1, wherein the second embodiment is different from the first embodiment in that the material of the reflectance adjusting layer 2 i is a fluoride, for example

MgF2’且MgF2材質之該反射率調整層2 i的膜層厚度係 為800埃。 另外,表1中所示之第三實施例,其與第-、第二者 施例不同之處在於,該反射率調整層2 i的材質係為—ς 乳化物與氟化物之組合,例如Sl02與MgF2之混合膜層, 且S1〇2肖MgF2之混合材質之該反射率調整層2丄的曰膜 層厚度係為750埃。 、 綜合表1所述之實施例,本發明所提出之透明導電膜 =構1的具體實施結構如下:該基板1㈣為«/ΡΕΤ 才質。該反射率調整層2 !的折射率係低於該基板丄〇之 折射率,該反射率調整層2 1的折射率係為!.42至工46, =射率調整層21的膜層厚度係為_至8⑻埃,而該 調整層2 1可為氧化物材質,例如該反射率調 =為膜f厚度彻埃之⑽;或是該反射率調整層 厚产:: :’例如該反射率調整層2 1係為膜層The thickness of the film of the reflectance adjusting layer 2 i of MgF2' and MgF2 was 800 angstroms. Further, the third embodiment shown in Table 1 is different from the first and second embodiments in that the material of the reflectance adjusting layer 2 i is - ς a combination of an emulsion and a fluoride, for example The mixed film layer of Sl02 and MgF2, and the thickness of the film layer of the reflectance adjusting layer 2 of the mixed material of S1〇2 and XiaoFgF2 is 750 angstroms. In the embodiment described in Table 1, the specific structure of the transparent conductive film according to the present invention is as follows: The substrate 1 (four) is «/ΡΕΤ. The refractive index of the reflectance adjusting layer 2! is lower than the refractive index of the substrate ,, and the refractive index of the reflectance adjusting layer 2 1 is!至4246, = the film thickness of the irradiance adjustment layer 21 is _ to 8 (8) angstroms, and the adjustment layer 2 1 may be an oxide material, for example, the reflectance adjustment = film thickness f (10); Or the reflectance adjustment layer is thick:: : ' For example, the reflectance adjustment layer 2 1 is a film layer

Hu Μ§ 2,又或者’該反射率調整層2 1可為 物與氟化物之組合材質,例如該反射率調整層2 i係 201042667 為膜層厚度750埃之Sl02與MgF2之組合。再者, 導電膜2 2的膜層厚度為13〇12〇_,且該透明 2 2可為ΙΤΟ材質。 、 考第-圖與第二圖’當上述的透明導電膜層結構 1堆豐完成之後,該最外層之透明導電膜2 2的表面 Ο ❹ 率為Α (如第-圖所示);而在該透明導電膜層結構工在 進行钕刻步驟之後,該透明導電膜層結構丄的被钱刻部 =射率的反射率為B’該透明導電膜層結構^未被钱 以分之反射率依然為A(如第二圖所示),而本發明可 猎由調整該反射率調整層2工的厚度與折射率, =與B的數值相近,換言之’在餘刻步驟之後,該透: 私臈層結構1的被蝕刻部分之反射 部分之反射率相近,藉以縮小顯色的落差,:=: 跡的明顯程度。 i以降低蝕刻痕 而根據本發明的具體實施結果,該透明導電膜声 的被韻刻部分之反射率(即B)係為8·6 電膜層結構i的未被_部分之反射^月導 兩者的數值相近,因此,對肉眼而言,該㈣ 構1的未糊部分與㈣刻部分具 = 口::表現’換言之,峨程所造成的痕= =圖中的階差)就不易被觀察到,進而提升顯示影像的 :發明更提出一種使用該透明導電膜層結構 〜備’例如LCD、CRT及觸控面板等顯示器或其他相關 9 201042667 顯不设備’或是具有上述顯示設借的t子產品。 綜上所述,本發明具有下列優點: 1 本發明則利用反射率調整層2 1的光學效果,將 :二 被__糊部分的折射 ^t 相_巾,以㈣_後不⑽層所造 成的反射率洛差,進而消除兩區塊之間的顯色 :ΐΓ無:f覺姓刻製程所殘留下的痕跡或結構上 2差/、’因此可提升本發明之膜層結構之顯示效果。 以上所述僅為本發明之較佳實施例,非意欲偈限 發明之專利㈣_,故舉凡利本發明說料及圖2 二斤為:等效變化,均同理皆包含於本“: 圍内,合予陳明。 惟〜保邊摩巳 【圖式簡單說明】 第-圖係為本發明之透明導電膜層結構的示 之透明導電膜層結構經過崎程後 【主要元件符號說明】 1 透明導電膜層結構 10 基板 2 0 多層膜結構 2 1 反射率調整層 2 2 透明導電膜 A、Β 反射率Hu Μ§ 2, or alternatively, the reflectance adjusting layer 2 1 may be a combination of a substance and a fluoride. For example, the reflectance adjusting layer 2 i 201042667 is a combination of Sl02 and MgF2 having a film thickness of 750 angstroms. Furthermore, the thickness of the conductive film 22 is 13 〇 12 〇 _, and the transparent 2 2 may be a ruthenium material. , FIG. 1 and FIG. 2 'When the above-mentioned transparent conductive film layer structure 1 is completed, the surface of the outermost transparent conductive film 22 has an Ο rate of Α (as shown in FIG. After the transparent conductive film layer structure is subjected to the engraving step, the transparent conductive film layer structure is etched by the moieved portion = the reflectivity of the transmittance B', and the transparent conductive film layer structure is not reflected by the money. The rate is still A (as shown in the second figure), and the present invention can be adjusted by adjusting the thickness of the reflectivity adjusting layer 2 and the refractive index, = and the value of B is similar, in other words, after the remaining steps, the through : The reflectance of the etched portion of the private layer structure 1 is similar, thereby reducing the drop of color development, :=: the apparent degree of the trace. i is to reduce the etching marks. According to the specific implementation result of the present invention, the reflectance of the rhymed portion of the transparent conductive film sound (ie, B) is the reflection of the un-part of the 8.6 layer structure i. The values of the two are similar. Therefore, for the naked eye, the undisclosed part of the (4) structure 1 and the (4) part of the part have the mouth:: the performance 'in other words, the mark caused by the process == the step difference in the figure) It is not easy to be observed, and thus the display image is improved. The invention further proposes a display using the transparent conductive film layer structure, such as a display such as an LCD, a CRT, or a touch panel, or other related devices. L sub-products. In summary, the present invention has the following advantages: 1 The present invention utilizes the optical effect of the reflectance adjusting layer 2 1 to: refract the __ paste portion of the __ paste, to (4) _ after the (10) layer The resulting reflectance is poorly correlated, thereby eliminating the coloration between the two blocks: ΐΓ : : : : : : : : : 姓 姓 姓 姓 姓 姓 姓 姓 姓 姓 姓 姓 姓 姓 姓 姓 姓 姓 姓 姓 姓 姓 姓 姓 姓 姓 姓 姓 姓 姓effect. The above description is only a preferred embodiment of the present invention, and is not intended to limit the invention patent (4) _, so the invention is based on the invention and the figure 2 is equivalent to the change, and is equally included in the ": , and to Chen Ming. Only ~ Baobian Capricorn [Simple description of the diagram] The first diagram is the transparent conductive film layer structure of the present invention, the structure of the transparent conductive film layer after the process of the process [the main component symbol description] 1 Transparent conductive film layer structure 10 Substrate 2 0 Multilayer film structure 2 1 Reflectance adjusting layer 2 2 Transparent conductive film A, 反射 Reflectance

Claims (1)

201042667 七 ❹ 2 4 6 、申請專利範圍: 、一種透料—構,其包括 該基板上之多層模結構,該多層膜結=二 成;其中,射率调整層及一透明導電膜所組 該反射率調整層係位於該基板上,該反射率 為折射率較該基板為低之化合物; 。… 該透明導電臈係、位於該反射率調整層上; 該透月導電膜層結構在餘刻後,該透明導電膜声 =刻部分之反射率係與未被钱刻部分二射 中該基板係二之材透層結構’其 、如由隹奎w 材貝或破璃/pET材質。 中該基板之透明導電膜層結構,其 m:]範圍第3項所述之透明導電膜層結構,a 中邊反射率調整層的折射率係為142至i牝 /、 二 範圍第4項所述之透明導電膜層結構,复 ^反射率凋整層的膜層厚度係為3〇〇至8〇〇堆。,、 二申請專利範圍第5項所述之透明導電臈層羹。 中該反射率調整声的姑曹你或备 、。構’其 物與氣化物之= 物'氣化物或氧化 如申請專利範圍第6項所述之透明導電❹ 中該反射率調整層的材質係為Si02。、…冓’其 11 7 201042667 8 範圍第6項所述之透明導電膜層結構,其 ”反射率調整層的材f係為MgF2。 中利乾圍第6項所述之透明導電膜層結構,发 10 ==,係為Si02與孽的組合: J:中Μ /祀圍第6項所述之透明導電膜層結構, ,、中該透明導電膜的材 工的膜層厚度係為⑽至且該㈣導電膜 1構^項所述之透明導電膜層結 係為層結構的爛部分之反射率 8.8。 被_之該透明導電膜之反射率係為 12層專利範圍第1項所述之透明導電臈201042667 七❹ 2 4 6 , the scope of patent application: a transmissive structure comprising a multi-layer mold structure on the substrate, the multilayer film junction = 20%; wherein the radiation rate adjusting layer and a transparent conductive film are grouped The reflectivity adjusting layer is on the substrate, and the reflectance is a compound having a lower refractive index than the substrate; The transparent conductive lanthanum system is located on the reflectivity adjusting layer; after the etched moon conductive film layer structure, the transparent conductive film sound=etched portion of the reflectance system and the unetched portion of the substrate The structure of the material of the second layer is ', such as Yu Kui w material shell or broken glass / pET material. The transparent conductive film layer structure of the substrate, wherein the m=: range of the transparent conductive film layer structure described in item 3, the refractive index of the middle side reflectance adjusting layer is 142 to i牝/, and the second range is the fourth item. In the transparent conductive film layer structure, the film thickness of the complex reflection layer is from 3 〇〇 to 8 〇〇. , and the application of the transparent conductive layer 羹 described in item 5 of the patent scope. In the reflectivity adjustment sound, you can prepare. The material of the material and the vaporized material is vaporized or oxidized. The material of the reflectance adjusting layer in the transparent conductive crucible according to claim 6 is SiO 2 . The transparent conductive film layer structure described in the sixth aspect of the present invention, wherein the material f of the reflectance adjusting layer is MgF2. The transparent conductive film layer structure described in the sixth item of Zhongli Qianwei , hair 10 ==, is a combination of SiO 2 and 孽: J: 透明 / 透明 第 第 第 第 第 第 第 第 第 透明 透明 透明 透明 透明 透明 透明 透明 透明 透明 透明 透明 透明 透明 透明 透明 透明 透明 透明 透明 透明 透明The transparent conductive film layer described in the (4) conductive film 1 structure has a reflectance of 8.8 of the ruin portion of the layer structure. The reflectance of the transparent conductive film is the first item of the 12-layer patent range. Transparent conductive
TW98117013A 2009-05-22 2009-05-22 Transparent conductive film structure and display device thereof TW201042667A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102789826A (en) * 2011-05-19 2012-11-21 智盛全球股份有限公司 Conductive thin film
CN102789827A (en) * 2011-05-19 2012-11-21 智盛全球股份有限公司 Conductive thin film

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102789826A (en) * 2011-05-19 2012-11-21 智盛全球股份有限公司 Conductive thin film
CN102789827A (en) * 2011-05-19 2012-11-21 智盛全球股份有限公司 Conductive thin film

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