TW201041034A - Substrate processing method and storage medium - Google Patents

Abstract

This invention relates to a substrate processing method and a storage medium. The substrate processing method is capable of reducing the occurrence of linear scars by making a top portion of a hole even, suppressing a distortion at the bottom portion, and preventing the occurrence of a bowing shape so as to form a hole with a good vertical profile in a target layer to be processed. A BARC film, which is used as an intermediate layer, is etched under a processing pressure of 100 mTorr (1.33×10 Pa) to 150 mTorr (2.0×10 Pa) by using a mixture gas of CF4, CHF3 and C4F8 as a processing gas. Then, an ACL film (amorphous carbon film), which is used as a lower photoresist layer, is etched by using a COS-containing gas as a processing gas, and an oxide film, which is used as the target layer to be processed, is etched thereafter by using a C6F6-containing gas as a processing gas.

Description

201041034 VI. Description of the Invention: [Technical Field] The present invention relates to a substrate processing method and a memory medium, and more particularly to a substrate processing method capable of etching an etching target layer while protecting a mask layer . [Prior Art] A wafer for a semiconductor device is known in which a lower resist film made of a Dunhua film or an organic film, an anti-reflection film (BARC film), or the like is laminated on a tantalum substrate. In particular, the lower photoresist film functions as a mask when etching an oxide film. In recent years, with the miniaturization of semiconductor elements, it is necessary to form a wiring pattern on a wafer surface more finely. In order to form such a fine wiring pattern, in the manufacturing process of the semiconductor element, it is necessary to reduce the minimum size of the photoresist pattern as the underlying layer of the mask layer, and to correctly transfer the small-sized opening portion (hole or groove). The target layer (oxide film) is processed. However, the size of the opening of the required hole or groove (hereinafter referred to as "hole") is getting smaller and smaller, and the aspect ratio is getting larger and larger. On the other hand, the film thickness of the mask layer is increased. The thinner the tendency, the more the striation will occur in the upper shape of the hole during etching, and there will be a problem of distortion in the shape of the bottom of the hole in the processing target layer. . On the other hand, at the time of etching, since the thickness of the mask layer cannot be sufficiently ensured, there is a problem in that the cross section of the hole formed in the treatment target layer has a bow shape (expanded shape). Top 3 201041034 The problem is that the semiconductor component yield is reduced. In the prior art, Patent Document 1 and Patent Document 2 disclose a conventional technique for preventing deformation or distortion of such a hole shape. Patent Document 1 discloses a method for ashing a photoresist pattern, which is a technique for preventing a sidewall of an insulating film which is etched by pattern from being exposed to an oxygen plasma, which is performed by pattern etching an interlayer insulating film by The oxygen plasma is supplied to perform ashing treatment to remove the photoresist pattern used as the mask layer from the interlayer insulating film, and ashing is performed in a state where oxygen plasma and carbon are supplied. Further, Patent Document 2 describes a method of engraving, and an object of the invention is to provide an etching method for obtaining a vertically processed shape having a small bow shape during processing of an insulating film for semiconductor manufacturing, by controlling etching time, gas flow rate or The consumption of 〇, F, and N on the inner wall surface is used to adjust the excessive 0, F, or N radical incident amount at the initial stage of etching to suppress the excessive Ο, F, or N radical incident amount, thereby obtaining a stable etching shape. However, the above-described conventional techniques fail to align the shape of the upper surface of the hole formed by the processing target layer and eliminate the hole cross-sectional shape. [Patent Document 1] The distortion, and, in turn, may not inhibit the bow shape resulting from the hole profile. SUMMARY OF THE INVENTION An object of the present invention is to provide a substrate processing method and a memory medium in which the shape of the upper surface of the hole is neat and the shape of the bottom is not twisted. 201041034 = The layer of the processing # is formed to vertically form a well-shaped hole. Further, the present invention provides a substrate processing method and a memory medium which are capable of preventing the partial opening of the side wall surface of the hole and forming a hole having a good vertical shape in the geographical target layer.

In order to achieve the above object, the basis of the application of the scope of the patent application is based on the processing target layer, and the substrate having the layered cover and the interlayer is processed to pass through the intermediate layer and the mask layer. The treatment target layered Langxian County has a 帛1 etching step of using a mixed gas containing CF4 gas, CHF3 gas, and c4F8 gas as a processing gas, and treating pressure l〇OmTorr (1.33xl〇pa)~i5〇 mT 〇rr (2.〇xl〇pa) to etch the intermediate layer; and a second etching step of etching the mask layer by using a c〇s (carbon oxysulfide) gas containing gas as a processing gas. In order to achieve the above object, the substrate processing method according to claim 2 is applied to the processing target layer, and the substrate on which the mask layer and the intermediate layer are laminated is subjected to a rice etching process to transmit the intermediate layer and the mask. The layer forming a pattern shape in the shai processing target layer has a processing target layer etching step of etching the processing target layer by using a C^6 gas-containing gas as a processing gas. In order to achieve the above object, the substrate processing method according to claim 3 is applied to the processing target layer, and the substrate on which the mask layer and the intermediate layer are laminated is subjected to surname processing to transmit the intermediate layer and the mask. The layer-forming object layer forms a pattern shape, and has a process step of processing the target layer by using a CJ6 gas-containing gas as the processing gas 5 201041034 before the etching step, and using the C4f6 gas containing gas to add the cos The cos body of the gas contains a gas as a processing gas in a subsequent etching step to name the processing target layer. In order to achieve the above object, the substrate processing method according to claim 4 is applied to the processing target layer, and the base layer of the mask layer and the intermediate layer are laminated to pass through the intermediate layer and The mask layer forms a pattern shape on the processing target layer, and has an i-th etching step of using a mixed gas containing CF4 gas, CHF3 gas, and CJ8 gas as a processing gas, and a treatment pressure of 100 mTorr (1.33×10 Pa) to 15 〇mT〇rr(2.〇xlOPa) is used to engrave the intermediate layer; the second etching step is to etch the mask layer by using a gas containing gas as a processing gas; and the third etching step is to use QF6 gas The treatment target layer is etched by containing a gas as a process gas system. In order to achieve the above object, the substrate processing method according to claim 5 is applied to the processing target layer, and the substrate on which the mask layer and the intermediate layer are laminated is etched to transmit the intermediate layer and the mask layer. And forming a pattern shape on the processing target layer, which has a second etching step of using a combined gas containing CF4 gas, CHF3 gas, and QF8 gas as a processing gas' and processing pressure of 100 mT〇ri. ( 1.33×1 〇Pa) ~150mTorr (2.0X1 〇pa) to etch the intermediate layer; the second etching step uses the c〇s gas containing gas as the conditioning gas to etch the mask layer; and the fourth remaining step is to utilize The CJ6 gas contains a gas as a processing gas before the etching step, 201041034 and the gas layer containing the gas containing 胄cos gas containing the gas as a processing gas for the c4f6 gas to process the target layer. The method for processing a substrate according to Item 6 of the scope of the patent application is the substrate processing method according to Item 1, 4 or 5 of the claim, which causes the c〇s gas in the second remaining step. The flow rate is 3 to 5% relative to her gas flow. %

The substrate processing method described in claim 7 is the substrate processing method according to any one of claims 1, 4 or 5, wherein the processing pressure is 2 〇mT 〇rr (2) in the second etching step. The substrate processing method according to claim 8 is the substrate processing method according to claim 2, wherein the QF6 gas is used in the processing target layer etching step and the third etching step. 3 The flow rate of the QF6 gas in the gas is 2% or more with respect to the total process gas flow rate. The method of processing the substrate described in the application of the ninth application is the substrate processing method of claim 8, wherein the gas containing the gas further contains a gas and a gas. Patent Application No. 10:>: The substrate processing method described in the above is the substrate processing method of Patent Application No. 2 or 4, wherein in the processing target layer etching step and the third etching step, the processing pressure is 20mTorr (2.66Pa) or less. Patent application (4) Item 11 of the substrate processing method is 7 7 41041034. In the substrate processing method of claim 3 or 5, in the image layer etching step and the fourth etching step, the latter portion is etched; . It. The stream 4 of the COS gas is 2 to 5% relative to the total process gas flow rate, and the step (4) of the latter stage is extended for a specific time: the total amount of the material to be treated is (four) when the patent is applied. The substrate processing method according to the third aspect or the fifth aspect of the invention is directed to the substrate processing method according to the third or fifth aspect of the invention, wherein the step of engraving and the step of the fourth step are performed by extending the post-engraving step for a specific time. Over-etched. Further, the substrate processing method for applying the special fiber according to Item 12 of the Patent Application No. I3 is applied, and the time of the substrate is 1 () to 3 〇 for the total remaining time of the processing target layer. %. In order to achieve the above objectives, (4) The 14th item of the patent scope ^ Memory media' has a computer-readable memory medium that enables the computer to implement a substrate processing method. The substrate processing method is processed on the image layer: The substrate in which the mask layer and the intermediate layer are stacked is subjected to a shape formed on the processing target layer through the inter-sheet layer and the material layer, wherein the substrate processing method has the following: the first axis 0 system utilizes cf4 The gas, the CHf3 gas, and the QF8 gas are used as the processing gas, and the interlayer is etched at a treatment pressure of 7 100 mT 〇 1T (1.33 x 10 Pa) to 150 Torr (2 〇 xl 〇 pa). In the step, the mask layer is etched by using a gas containing a gas as a gas, and a third etching step is performed by using a gas containing gas as a processing gas system in 201041034. In order to achieve the above object, the memory medium described in claim 15 is a computer readable memory medium in which a computer is subjected to a substrate processing method, and the substrate processing method is processed.

On the image layer, a substrate having a mask layer and an intermediate layer is etched to form a pattern shape in the processing target layer through the intermediate layer and the mask layer, wherein the substrate processing method has: an i-th etching The method comprises the steps of: etching a mixed gas containing a CF4 gas, a CHF3 gas, and a c4F8 gas as a processing gas, and etching the intermediate layer at a treatment pressure of 100 mTorr (1.33 X1 〇Pa) to 15 〇mT〇n: (2.0 X1 〇pa); In the second step, the mask layer is etched by using a c〇s gas-containing gas as a processing gas; and the fourth etching step is performed by using a CJ6 gas-containing gas as a processing gas before the etching step, and using the cj6 Gas containing gas added with c〇s gas

The gas contains a gas as a processing gas in a subsequent etching step to etch the processing target layer. The substrate processing method described in the first paragraph of the patent application (4) is to use a mixture gas containing CF4 gas, CHF3 gas, and c4f8 gas as a processing gas to be etched by processing 100 mT 〇rr (1.33X1 OPaH 50mT rr (2.0x!0Pa). The middle layer and the COS (oxycarbon sulphide) gas containing gas as the processing gas ^ etch the mask layer, so that the upper surface of the hole formed by the treatment target layer can be neatly arranged and the line trace is eliminated and the bottom shape is not twisted, and can be shaped 4 Straight processing of well-shaped holes. / 〃 201041034 The substrate (10) of the substrate described in the second paragraph of the patent application is a gas containing a gas as a processing gas, so that the sidewall of the hole formed by the treatment target layer can be avoided. The shape of the bow is formed as it is, and the shape of the vertical processing is good. The patent application _ the substrate processing described in item 3 has a processing target layer _ step by using Q =

The gas is used as the processing gas in the previous section, and the gas is used in the gas-containing gas, and the C gas gas is added to the C gas gas, and the C 2 gas is used as the processing gas, and the processing step is followed by (4) processing the target layer, = sister work, hole shape The collapse and the shape of the bow shape, and the bottom straightness = small, and can form a hole with excellent vertical shape.曰 曰 曰 第 第 第 第 第 第 第 第 第 第 基板 第 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板 基板Rr(L33><1〇Pa)~150mTorr(2.〇xl〇pa)! In the middle of the insect, Zhan's CQS gas contains gas as the green mask layer, and then uses C6F6 gas to contain gas as the processing gas to process the target layer. Therefore, the upper surface of the hole of the processing target layer can be adjusted. The shape, the line marks are removed, and the distortion of the bottom shape is suppressed, and the portion of the side wall surface of the hole is prevented from being enlarged to form a bow shape to form a hole having a vertically processed shape. The substrate processing method according to the fifth aspect of the invention is claimed in claim 5, and the memory medium described in claim 15 is a processing gas having a processing gas pressure of 100 mTorr using a mixed gas containing a CF4 gas 'CHF3 gas and a C4F8 gas as a processing gas'. 1.33xl0Pa)~150mTorr (2.0xl0Pa) to engrave the middle layer 'etching the mask layer with COS gas containing gas as the processing gas, and then using C4F6 gas containing gas as the processing gas before the etching step' and using the c4f6 gas The cos gas to which the gas is added with the cos gas 含有 contains the gas as the processing gas, and the etching step is performed to process the target layer, so that the collapse of the shape of the hole formed by the treatment target layer and the shape of the bow shape can be avoided, and the bottom diameter is not The hole is reduced to form a hole having an excellent vertical shape. According to the substrate processing method described in the sixth aspect of the patent application, in the second etching step, the cos gas flow rate is 3 to 5% with respect to the total processing gas flow rate, so that the opening of the opening of the hole can be prevented from being cut off. The area is enlarged and the sidewall faces of the holes are worn to form holes that are well machined in the shape of q. According to the substrate processing method of the seventh aspect of the invention, the processing pressure is a low pressure of 2 〇 mT 〇rr (2.66 Pa), so that a hole having a good vertical processing shape can be obtained. According to the substrate processing method of the eighth aspect of the invention, in the processing target layer etching step and the third etching step, the flow rate of the gas in the c6f6 gas-containing gas is 2% or more with respect to the total processing gas flow rate, so that the bow can be suppressed. The shape of the plastic is created to form a hole that is well machined in a vertical shape. According to the substrate processing method described in the ninth application, the C0F6 gas-containing gas further contains C4F6 gas and C4F8 gas, so that the opening of the vertical processing shape of the hole can be enlarged, and the effect of the bow shape can be improved. According to the substrate processing method of the tenth aspect of the invention, in the processing target layer etching step and the third etching step, the processing pressure is a low pressure of 20 mT 〇rr (2.66 Pa) or less, so that a hole having a good vertical processing shape can be obtained. According to the substrate processing method of claim 11, in the processing target layer remaining step and the fourth remaining step, the flow rate of the COS gas in the subsequent step is 2 to 5% with respect to the total processing gas flow rate, Therefore, by utilizing the smoothing effect of the c〇s gas, it is possible to prevent the diameter of the entrance portion of the hole from expanding. According to the substrate processing method of claim 12, in the processing target layer etching step and the fourth etching step, the etching step is performed by extending the subsequent step of the subsequent step for a predetermined time, so that the diameter of the bottom of the hole can be enlarged. A hole with a better vertical shape. According to the substrate processing method described in claim 13, the specific time is 10 to 30/ of the total etching time for the processing target layer. Therefore, the minimum required etching time can be used to form a hole having a better vertical shape. [Embodiment] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. 12 201041034 First, the needle f (four) is transferred to the actual _ state substrate processing method of the present invention = substrate processing money to illustrate. The substrate processing system has a plurality of garments and a module which is etched by a substrate to a substrate (% of a semiconductor wafer, hereinafter referred to as "wafer W"). Fig. 1 is a plan view schematically showing the configuration of a substrate processing system for carrying out the substrate processing method of the embodiment.

In FIG. 1, the substrate processing system 10 has two process boats 11 (which are used as substrate processing apparatuses) that perform RIE (Reactive) processing on the substrate to be processed (wafer W). And a rectangular atmospheric transfer chamber 13 (which is a common transfer chamber, hereinafter referred to as a "loading module") to which two process boats 11 are connected. The ', '' loading module 13 is connected in addition to the above-described process boat n Three wafer cassette mounting tables 15 for holding wafer cassettes 14 (for example, substrate storage containers) for storing, for example, 25 wafers W, and wafers for carrying out wafer cassettes 14 The position alignment mechanism 16 for positioning the position of the W" and the processing chamber 17 after the post-processing of the wafer w after the RIE processing is performed (After Treatment ChambeiO. The two process boats 11 are connected to the loading module 13 The side wall in the side direction has a loading module 13 interposed therebetween and is disposed opposite to the three wafer cassette mounting tables 15 , and the positioning mechanism 16 is disposed at one end of the longitudinal direction of the loading module 13 ' The post-processing chamber 17 is disposed on the long side of the split-carrying module 13 The loading module 13 has a Scalar-type dual-arm transfer arm mechanism 19 disposed therein and used for transporting the wafer W (which is referred to as 13 201041034 ' and corresponding to each of the crystal cassette mounting tables 15 And placed on the side wall 3 埠 2〇 (wafer w input σ, its

On the mouth. Each of the 20 series is provided with an opening and closing door. Moving: == is taken out from the wafer 14 ° by the loading cassette 20, and the taken wafer W is carried out = the human process 411, the position alignment mechanism 16, or the post-processing chamber 17. @Processing module with fine processing for crystallization _ vacuum processing chamber) 'and built-in connecting rod w::= two connecting rod _ type single grab type transfer arm% "reverse = mold: ^ room capacity - Long time again; ^ 〇 反应 反应 反应 室内 室内 室内 室内 室内 室内 室内 室内 室内 室内 室内 室内 室内 室内 室内 室内 室内 室内 室内 室内 室内 室内 室内 室内 室内 室内 室内 室内 室内 室内 室内 室内 室内 室内 室内 室内 室内 Esc Esc Esc Esc Esc Esc Esc Esc Esc Esc Esc Esc Esc Esc (mectr0static Chuck; electrostatic fixture). And attached to the process module 12, the borrower's face is old, the gas is 35, the m is going to g I will process the gas (such as fluorine gas / hurricane body) ¥ Inside the reaction chamber, an electric field is generated between the electrodes, so that the ions are generated, the ions are generated, and the gas is generated from the gas. The gas is vaporized from the gas to the (h): and the free radicals are applied to the wafer. The pressure of the boat is, for example, a polycrystalline stone layer. The pressure of the module 12 (4) is turned to a straight line. The load lock module 27 is connected to the process module 12 by means of a vacuum brake. Between 29 and with the helium air valve 3〇, and, and 'and the joint at the Η has a large chamber. The vacuum inside the pressure It is moved to the inside of the load lock module 27, the arm 26, and the transport damper 31 is provided from the shaft feed arm 26 to the center of the lock, and the transfer arm 26 is provided from the transfer arm 26 to the side of the group 12 1 damper 32. The i-th body is cried, and the U-side of the planting group is provided with a second damper at the front end portion of the second transfer arm 26, and a 32 system is provided on the track on which the (fork) 33 moves, The wafer W supporting the wafer w is temporarily supported and the wafer 12 processed by the processing of the wafer is processed by the wafer 12 after the processing of the module 12 is smoothly performed. In addition, the substrate processing system loading module 13 is used to control the process boat η, which is called "each component, 6 and the post-processing chamber 17 (the following system and the system controller installed in the agricultural module m (not As shown in the figure, the operation controller system controller at one end of the long side of 40. is matched with the process recipe (which is used for ^^ processing or wafer W movement, chapter (four) crying / style) to control each The action of the constituents is controlled to the axis of the 〇 system. (4) If (4) is not shown in Figure 2, the section along line II-II of Figure 1 In Fig. 2, 劁轺挞Λ, , , and 12 have a reaction chamber 22, a mounting table 23 of the wafer W provided in the reaction chamber 22 of the 15 201041034, and a mounting table 23 above the reaction chamber 22 a leaching head 24 (which is an upper electrode) disposed oppositely, a TMP25 (Turbo Molecular Pump) for argon gas in the reaction chamber 22, and a reaction chamber 22 and A variable APC (Adaptive Pressure Control) valve 226 (which acts as a butterfly valve) between the TMPs 25 to control the pressure in the reaction chamber 22. The gas discharge head 24 is connected to the first high-frequency power source 227 by the first matching device 28, and the mounting table 23 is connected to the second high-frequency power source 35 via the second matching device 36. The first high-frequency power source 227 applies a relatively high frequency (for example, a high-frequency electric power of 6 〇 MHz) to the air shower head 24 as the excitation power, and the second high-frequency power source 35 has a relatively low frequency ( For example, a high frequency electric power of 2 MHz is applied to the mounting table 23 as a bias voltage. The matching devices 28 and 36 reduce the reflection of the high-frequency electric power from the air shower head 24 or the mounting table 23, respectively, and maximize the supply efficiency of the high-frequency electric power. The air shower head 24 is constituted by a disk-shaped gas supply unit 230, and the gas supply unit 230 has a temporary storage chamber 232. The temporary storage chamber 232 communicates with the inside of the reaction chamber 22 through the gas vent 34. The temporary storage chamber 232 is connected to each of the gas supply systems of the CF-based gas. The °CF-based gas supply system supplies the CF4 gas, the CHF3 emulsion, and the c4f8 gas to the temporary storage chamber 232, respectively. Further, the oxygen-based gas supply system supplies the helium gas and the COS gas to the temporary storage chamber 232, respectively. The supplied cf4 gas, CHF3 gas, bright gas, and & gas, 16 201041034 COS rolled body are supplied to the reaction chamber by the gas vent 34. In the reaction chamber of the process module 12, as described above, the high-frequency electric power is applied to the processing space s, so that the processing gas supplied from the shower head 24 to the processing space S becomes a high-density plasma to generate Ions or free radicals, and use a scribe or free radical to perform a touch process on the substrate. Fig. 3 is a cross-sectional view schematically showing the structure of a semiconductor wafer to which an etching process or the like is applied in the substrate processing system of Fig. 1. In FIG. 3, the wafer W has an oxide film 51 formed on the surface of the tantalum substrate 5, and an acl film (amorphous carbon film) 52 and an anti-reflection film (BARC) which are sequentially laminated on the oxide film 51. The film base and the photoresist film %. The base material 50 is a disk-shaped thin plate made of tantalum, and is formed by oxidation, etc. on the surface by oxidation or the like, and then oxidized. The ACL film 52 is formed on the film 51. The ACL film 52 functions as a lower layer ◎ silk film. The ACL film 52 is formed with an anti-reflection film (BARC film) 53 by, for example, a coating process. The BARC film is made up of a package. It is composed of a polymer tree which absorbs a pigment of a specific wavelength (for example, irradiating ArF excimer laser light toward the photoresist film %), and can prevent ArF excimer laser light transmitted through the photoresist film 54 in the ACL film. 52 or the oxide film 51 is reflected and reaches the photoresist film 54 again. The photoresist film 54 is formed on the BARC film 53 by, for example, a spin coater (not shown). The photoresist film 54 is positive-type photosensitive. It is composed of a resin and is deteriorated to be soluble when irradiated with ΑιΤ excimer laser light. 17 201041034 Structure 1 Round W' Stepper (omitted pattern) will = 254' then the photoresist film, shot with eight molecules == for solubility. After that, the strong development droplets will be deteriorated to the soluble part. The removal will be removed, so that at the position of the hole of the wafer wj-like inversion, the photoresist film 54 having the opening 55 will be removed after the second hole is removed. BARC film 邛 5伖The order is transferred to one of the oxygen as the anti-reflection film, and finally, the hole having the characteristic opening portion is excellent. In recent years, in order to satisfy the semi-target wafer W', it is necessary to make the hole surface and the requirement ' No distortion, and _ $ face H and a hole with a good shape at the bottom, but in the thinner to form a vertical shape, the shape of the round W is used by the interlayer or the mask layer for the recent years::: The upper shape of the =r is the intermediate shape of the barc film 53 and the hole's upper surface' = the sunday w, in order to establish that the shape of the hole can be formed to suppress the shape of the bow shape without distortion, and the substrate processing side This is from the formation of a vertical processing of the shape of the hole CF gas as a place: after entering various experiments, 'discovery After enrichment with money engraving, m^ sub-attribute to BARC film 53 with higher pressure by using cos (oxycarbon sulphide) gas containing gas 18 201041034 body to monolouse! I ACL film 52, can reduce the upper line The present invention has been invented by the generation of traces and the distortion of the bottom shape, and it has been found that by etching the oxide film 51' by using a gas containing C#6 gas as a processing gas, the residual amount of the mask film can be protected and suppressed. The present invention has been invented by forming a bow-shaped shape to form a hole having a vertically processed shape. Hereinafter, a substrate processing method according to a first embodiment of the present invention will be described in detail. This processing is carried out in the process module 12 to the post-processing chamber 17 of the substrate processing system 10 in accordance with the substrate processing program (substrate processing recipe) and by the system controller of the substrate processing system 10. The substrate processing method has an existing CF-based gas (ie, CP4 gas, under a high-pressure atmosphere (for example, an atmosphere of 100 mT〇〇r (1.33×10 Pa) to i5〇mT〇0r (2.〇xl〇pa)). a first etching step of silver-etching the barc film 53 as an intermediate layer; a second etching step of etching the ACL film 52 as a lower layer photoresist by a gas containing a cos gas; and utilizing The third step (processing target layer) of the oxide film 51 as the processing target layer is etched with a gas. Fig. 4 is a flow chart showing the substrate processing of the substrate processing method according to the first embodiment of the present invention. In the substrate processing, the wafer w is first prepared by sequentially laminating the oxide layer 5, the ACL film 52, the BARC film 53, and the film 54 on the tantalum substrate 5, and the photoresist film 54 has a reflection preventing effect. One portion of the film 53 = the opening portion 55 (the opening width is, for example, 70 nm). Then, the circle is moved into the reaction chamber 22 19 201041034 of the process module (PM) 12 (refer to FIG. 2), and It is placed on the mounting table 23 (step S1). Next, the reaction chamber 22 of the PM 12 is controlled by an APC valve 226 or the like. The pressure is set to, for example, 120 mTorr (1.6 〇 xl OPa), and the temperature of the upper portion of the wafer W is set to, for example, 95 ° C, and the lower temperature is set to 20. (:: Then, 'the gas supply portion 230 from the bleeder head 24 will For example, a mixed gas of CFsc gas of 220 sccm, for example, 30 sccm of CHF3 gas, 30 sccm of C4F8 gas, and 7+12 sccm of 02 gas (CF-rich gas) is supplied into the reaction chamber 22 (step S2). Then, the upper electrode is applied. Applying 300 W of excitation electric power, a bias electric power of 300 W is applied to the mounting table 23. At this time, 'CF4 gas, CHF3 gas, C4F8 gas, and helium 2 gas are excited by the high-frequency electric power applied to the processing space S to be plasma. An ion or a radical is generated which collides with and reacts with the surface of the BARC film 53 or the side wall of the opening, deposits a deposit on the BARC film 53, and etches the BARC film 53 to form a photoresist film 54. The opening portion of the opening portion 54 (step S3). At this time, the deposit is sufficiently deposited on the BARC film 53 under the condition of being rich in deposit due to the high pressure and the CF-rich gas, and the shape of the opening portion is maintained. State of BARC 53. After the BARC film 53 is surnamed, the house force in the reaction chamber is set to, for example, 20 mTorr (2.66 Pa) by an APC valve or the like. Further, the temperature of the upper portion of the wafer W is set to, for example, 95 ° C. The lower temperature was set to 20 C. Then, the gas supply unit 230 of the gas injection head 24 was mixed with 750 sccm of 〇2 gas and 30 sccm of COS gas (the ratio of the COS gas flow rate to the total process gas flow rate was 4.0%). The c〇s gas contains 20 201041034 gas supplied to the reaction chamber (step S4). Then, 500 W of excitation electric power was applied to the upper electrode (the shower head 24) and the bias electric power was 500 W. At this time, the 〇2 gas and the COS gas are excited by the high-frequency electric power applied to the processing space S into a plasma to generate ions or radicals. The plasma or radical will collide with the ACL film 52 and react to etch the portion (step S5). - From ~wκ 1 ... π π 3

The diameter of the mouth portion is enlarged. Here, it is presumed that the s element contained in the cos gas can prevent the diameter of the entrance portion of the hole from expanding. If only CO gas or 〇2 gas is used, the smoothness of the shape and the ACL film APC valve or the like cannot be obtained to set the pressure in the reaction chamber to, for example, 2 〇 mT (10) (2.66 Pa). Further, the temperature at the upper portion of the wafer w is set to a temperature lower than the example = 95C', for example, to be added. . . Money, from the gas supply unit 23 of the gas head 24, for example, a gas of 12 sccm, a helium gas of two and five centimeters, a gas of two 〇SCCm, a body of 20 〇SCCm = === Gas: then 'apply to the upper electrode

Ai·gas and helium 2 gas will be applied to the ^6 emulsion' to excite electricity (4) to generate ions or free λ ^ frequency electric power Γ::, reaction and the part is stepped. At the time of ACL臈52, 21 201041034 > children's products are deposited on the 咕 gas, and the film is left in the state of the film thickness of the film which functions as a mask layer. The sides of the holes do not expand, and the bow & shape avoids the bow shape to form holes that are well machined in a vertical shape. In this manner, the wafer w having the holes having the upper shape and the bottom shape without distortion and the bow shape is formed on the oxide film 51, and moved to another ashing device to remove the ACL film as the mask layer, and then the process ends. This process (step S8). In this embodiment, a CF-rich gas containing CF4 gas, CHF3 gas, and C4F8 gas, and 10〇111!'〇]*1' (1.33\1〇1^)~15〇1111 [〇1*1. (2 plus 1 (^) high-pressure treatment pressure to etch the BARC film 53, after etching the ACL film 52' with a gas containing COS gas, and then etching the oxide film 51' with a gas containing C6F6 and depositing a desired amount of deposit The oxide film 51, the ACl film 52, the BARC film 53, and the light which are sequentially laminated on the ruthenium substrate 50 in a state in which the remaining amount of the mask is ensured in accordance with the film functioning as a mask film, respectively. The resist film 54 is etched, so that the shape of the upper surface of the oxide film 51 can be neatly arranged, and the shape of the strip can be avoided, and the shape of the bottom portion can be prevented from being twisted and the shape of the bow shape of the side wall surface can be enlarged to form a hole having a good vertical shape. This embodiment eliminates the formation of oxidation by enriching a gas in a high-pressure atmosphere while etching the BARC film 53 and by using a COS gas-containing gas addition effect in the ACL film 52 h. Traces of the upper line of the hole of the film 51, and suppress the hole In the present embodiment, the BARC film 53 22 201041034 = ^ is rich in CF gas at the time of etching, and the above-mentioned action silk core is obtained by using the cos milk 3 gas system at (4) eight (10) 52. The condition is no upper face 3 'pieces'> The mechanism of removing the traces of the pores formed by the oxide film 51 and suppressing the distortion of the bottom shape is presumed to be as follows: at the time of (10) 6 filming, by using the CF-rich limb (CHF3) Gas or c^8 gas) can make light on the barc film 53

The selection ratio of ^ 54 is increased, and thereby the button-shaped BARC film 53 is made good. In addition, the photoresist 臈 54 is made to be deposited by the gas (3), and the amount of the mask can be ensured, and the thickness of the mask layer can be ensured. The shape of the hole is stable. In addition, in l〇〇mTorr (1.33xl〇pa)^5〇mTorr(2.〇xl〇Pa)^ ^ : by using the film 53, the sediment deposition can be further promoted. The hole is still stable. Then, by using the cos gas-containing gas when the ACL film 52 is engraved, the film_smoothing effect of the film 52 is found, and it is presumed that the shape of the top view can be stabilized by the multiplication effect, and (4) the bottom shape is formed. Vertically machined holes with no distortion. In the present embodiment, when the oxide film 51 is etched, a mixed gas of C6F6 gas, QF6 gas, C^F8 gas, Ar gas, or helium gas is used as the processing gas, which is caused by the ACL film 52. c^6 gas makes the deposit easy to deposit' and is carried out under the condition of ensuring the residual amount of the mask film 6 to _, so that the arc shape formed in the hole 23 201041034 formed by the oxide film 51 can be avoided to report # + Ancient Λ & into a well-shaped hole. Moreover, the mechanism of v is presumed to be that when the film thickness of the mask film is insufficient, the phase (4) of the money engraved from the oblique direction will be secreted by the angle of the (4) _ section. When used as the ACL film _ thick foot _, Α (χ _ (four) face will be worn 1 minus # will not be worn, so the bow will not be seen in the oxide film 0

In the present embodiment, the name of the BARC film 53 and the decoration of the acu2 and the emulsification film 51 are continuously increased in productivity in the same manner as in the "pM". J. Next, a modification of the embodiment (second embodiment) will be described. The substrate processing method of the $2 embodiment is performed by _咕(4) containing a gas as a process gas before the process is tilted, and c4f6 gas containing a gas added 彳cos gas of the c〇s gas containing gas as a process gas after the step (four) stepping In the fourth step of the configuration, in place of the first embodiment, the QF6 gas contains a gas to etch the oxide film 51 (the third etching step), and the mixture of the Cf4 gas, the CHF3 gas, and the QF8 gas is used. The step of the barc film 53 (the first etching step) and the step of engraving the ACL film 52 with the gas containing the c〇s gas (the second etching step) are the same as those of the first embodiment described above. The second embodiment will be described with respect to the differences between the embodiments. Fig. 5 is a flowchart showing the substrate processing method of the substrate processing method of the present embodiment. In Fig. 5, 'the wafer W is carried into the reaction chamber 22 of the PM 12 (step S11), the pressure in the reaction chamber 22 is adjusted, and the cf-rich gas is introduced (step S12), and the excitation power and bias are applied. The electric power is used to etch the BARC film 53 (step S13); then, the pressure in the reaction chamber 22 is again adjusted, and the 〇2 gas and the COS gas are introduced (step S14); thereafter, the required electric power is applied to etch the ACL film 5 2 (step The steps up to S15) are the same as the steps S1 to S5 of the first embodiment. Next, the wafer W having the etched ACL film 52 is etched to transfer the opening of the ACL film 52 to, for example, a Si〇2 film. The oxide film 51 is formed. That is, the pressure in the reaction chamber of the wafer W (Fig. 6(A)) in which the etched ACL film 52 is accommodated is set to, for example, 20 mTorr (2 · 66 Pa) by an APC valve or the like. The temperature of the upper portion of the wafer w is set to, for example, 60 ° C, and the temperature of the lower portion is set to, for example, 40 ° C. Then, for example, 60 sccm of C4F6 gas, 200 sccm of Ar gas, 70 sccm is supplied from the gas supply portion 230 of the shower head 24. The c4f6 gas-containing gas mixed with the 〇2 gas is supplied into the reaction chamber (step S16). After electrical power is applied to the excitation of the upper portion electrode 500W, and bias power to the mounting table 23 is applied to 4500W.

At this time, the QF6 gas, the Ar gas, and the helium gas are excited by the high-frequency electric power applied to the processing space S to generate plasma or a free radical (Fig. 6(B)). The generated ions collide with the ACL film 52 and the oxygen tilt 51 at the bottom of the ACL 25 201041034 = open portion 55, and the I5 knife is etched (step etching step) (step S17). With the selectivity of the needle and the high etch rate (ER; Etching Rate), the opening portion of the opening width of the ruthenium film 52 is formed in the emulsion film 51 (Fig. 6(C)). However, since the oxide film 51 is relatively thick, if the film is continued under such conditions, the hole CD value becomes large. (4) Shaped friends know and therefore 'this real secret in the _ c4F6 gas age on the way to the gas, add cos gas to the μ gas containing electricity: = Γ 4 Ρ 6 gas containing gas and (10) gas mixing (mesh 6 (9)), and under the money conditions The oxide film 5 == the opening portion of the oxide film 51 having an opening width corresponding to the opening of the ACL Μ 52 (the stepping surface) of the film 52 and the side wall surface of the opening portion 55 and the c〇s gas The resulting protective film, ς, has been rolled, a 52 residual film amount; = film = good bow shape 'to the vertical processing shape, as such, will form the bottom shape of the oxide film 51 and no A $-shaped perforated shape-backed ashing device removes the remaining ACL film 52 to the end of the process. After the cutting (step S19), the present embodiment is performed by using a gas containing a C4F6 gas containing * and 〇2 gas as a body and an Ar gas as a processor before the stage 26 201041034

The etching step ′ and the COS gas containing gas containing the cos gas in the CUF6 gas are used as the processing gas to etch the target layer (oxide film 51) in the subsequent etching step, so that the ER can be high in the previous etching step. The oxide film 51 is etched to transfer the opening of the ACL film 52 to the oxide film 51, and in the subsequent etching step, the upper surface shape of the opening portion can be prevented by the smoothing effect of the c含有s body-containing gas. The CD value becomes large and the bow shape is generated, and the bottom diameter % is small to avoid forming a hole having a good vertical shape. In the subsequent etching step of the present embodiment, the mechanism for preventing the shape distortion of the upper surface of the hole and the smoothing effect of the CD value is not confirmed, but it is presumed to be due to the gas and c〇s in the processing gas. The reaction product (CS, CFS) of the gas = adheres to the side wall surface and the bottom of the opening to form a film, and the film composed of cs and CFS serves as a protective layer and a salty function, particularly protecting the side wall from ions. . It is also difficult to implement the second stage of the embodiment _ in the step 'Because of the bottom part of the hole, the ratio of the gas to the oxygen supplement 51 after the gas is contained in (10) gas is used, and the selection ratio of the non-utilizing the gamma system is lower. . That is to say, the former step (3) has a value of two. The shape of the upper part of the hole is collapsed, and the ER is ER, and the oxygen can be efficiently etched and the hole is formed. On the other hand, the post-etching step is a step in which the flat = priority step, the ER system is low in the front stage, the (c) c-plane shape collapses, the CD value becomes large, and the bow shape is formed in a vertical shape. The hole. 27 201041034 In the present embodiment, it is important to change the time point from the previous step to the step (4), that is, the time at which the cos gas is introduced, and the residual amount (residual thickness) of the mask film (ACL film 52) is considered. The desired CD value, aspect ratio, ER, _ required time, etc. are comprehensively judged. Specifically, after performing the test of etching the same oxide film under the same conditions in advance, it was found that it is preferable to determine the time point of the introduction of the cos gas before the completion of the mask film 〇 1 film 52 ′). (End of etching of the oxide film). For example, the c〇s gas is added at a time point when the residual amount of the ACL film 52 reaches about 5% of the initial value (for example, about 500 nm), so that the shift from the previous etching step to the subsequent etching step is appropriately performed. The c〇s gas introduction amount in the subsequent etching step in the present embodiment is preferably 2 to 5% with respect to the total process gas flow rate. When the amount of the c〇S gas is less than 2%, the pore size is increased. If the amount is more than 5%, the etching is stopped. In the present embodiment, when the COS gas is added from the etching of the oxide film 51, the oxidation is performed. The ER of the film 51 is lowered, but the ER of the ACL film 52 as the mask film does not fall to such a low level, so that the acl film 52 is etched before the etching of the oxide film 51 is completed, and there is no possibility The case where the oxide film 51 is surnamed occurs. In the present embodiment, by performing the post-etching step, the hole CD value of the oxide film 51 can be prevented from becoming large. Therefore, when the BARC film 53 and the ACL film 52 are etched, the effect obtained in the etching step of the oxide film 51 is previously multiplied. The use of a higher ER' also shortens the total engraving time. In the present embodiment, it is preferable to carry out the OE (Over-Etch) for a specific time by the same conditions as the post-etching step by 28 201041034 after performing the post-etching step. Thereby, the CD value at the bottom becomes larger and the difference between the top CD value and the bottom CD value becomes smaller, making the vertical processing shape better. The 0E time is, for example, 10 to 30% of the total etching time of the oxide film 51. When the 〇E time does not reach 10% of the total etching time, there is a possibility that the bottom CD value becomes large enough, and even if it exceeds 3〇%, the effect of the bottom CD value becomes large. obvious. 0 Specific embodiments of the present invention are described below. Table 1 and Table 2 show the treatment pressure, CF-rich gas, and the BARC film 51 step (the first etching step) and the etch ACL film 52 step (the second insect step) in the specific embodiment of the present invention. The relationship between the COS gas and the shape improvement effect of the hole. Table 1 Object layer pressure HF/LF cf4 chf3 c4f8 〇 2 Example 1 BARC 100 300/300 220 30 30 7+8 Example 2 - BARC 120 300/300 220 30 30 7+12 Example 3 --- BARC 150 300/300 220 30 30 7+8 Comparative Example 1 BARC 50 300/300 220 30 30 7+8 Comparative Example 2 BARC 75 300/300 220 30 30 7+8 Example 4 BARC 120 300/300 220 30 30 7+12 Example 5 BARC 120 300/300 220 30 30 7+12 Example 6 BARC 120 300/300 220 30 30 7+12 Comparative Example 3 --------_ Comparative Example 4 BARC 120 300/ 300 220 30 30 7+12 BARC 120 300/300 220 30 30 7+12 Comparative Example 5 BARC 120 300/300 150 *1 --- --- 29 201041034 Comparative Example 6 BARC 120 300/300 250 — — here The pressure system indicates the pressure (mTorr) in the processing chamber, and the HF and LF systems indicate that the excitation electric power (W) is applied to the upper electrode and the bias electric power (W) is applied to the mounting table. Further, CF4, CHF3, C4F8, and 〇2 are gas flow rates (unit: seem), respectively. In addition, "7+8" and "7+12" of the 02 gas flow rate indicate "(the amount of introduction from the center of the 02) + (the amount of the introduction from the end of the 〇2)". Further, *1 indicates that the processing gas contains 150 sccm of Ar gas. Table 2

Object Layer Pressure HF/LF 〇2 COS Shape Effect Example 1 ACL 20 500/500 750 30 〇 Example 2 ACL 20 500/500 750 30 ◎ Example 3 ACL 20 500/500 750 30 ◎ Comparative Example 1 ACL 20 500 /500 1125 9 X Comparative Example 2 ACL 20 500/500 750 30 X Example 4 ACL 20 500/500 600 30 (5.0%) ◎ Example 5 ACL 20 500/500 750 30 (4.0%) ◎ Example 6 ACL 20 500/500 900 30 (3.3%) ◎ Comparative Example 3 ACL 20 500/500 600 0 X Comparative Example 4 ACL 20 500/500 600 60 (10%) Δ Comparative Example 5 ACL 20 500/500 750 30 X Comparative Example 6 ACL 20 500/500 750 30 X Here, the pressure system indicates the pressure in the processing chamber (mTorr), and the HF and LF systems indicate that the excitation electric power (W) is applied to the upper electrode and the bias power is applied to the 30 201041034 mounting table. (w). Further, the 〇2 and COS systems respectively indicate the gas flow rate (seem), and the number in the parentheses of the cos gas indicates the ratio of the flow rate of the COS gas to the total amount of the processed gas. Further, the shape-induced fruit system indicates the observation of the top view and the cross-sectional shape of the ACL film 52, and the ◎ system indicates that the improvement effect is very good, and the lanthanoid system indicates that the improvement effect can be observed, so that it can be applied in practical use, and the Δ system indicates Although the shape improvement effect can be observed, it is not preferable, and the X system indicates that no improvement effect is observed, so that it cannot be applied practically. Further, Tables 1 and 2 are continuous processes, and a series of processes are displayed in the same embodiment and the same comparative example. In Tables 1 and 2, the examples and comparative examples i and 2 show the processing pressure dependence at the time of etching the BARC film 53, and the processing pressures of Examples 2 to 3 are the ranges of the present invention (100 mT 〇 rr (1.33 x 10 Pa)~ 150mT〇rr(2 〇χ1〇ρ&)), so that the shape improvement effect of the hole can be obtained, and the hole with the top view wireless strip trace and the bottom shape without distortion can be formed. From the example 3, it was found that the D treatment pressure at the time of the BARC film is particularly preferably 12 〇mT rr (1.6 X 〇 Pa) 〜 1 亀 T rr (2.0 x 10 Pa). On the other hand, in Comparative Examples 1 and 2, the treatment pressure at the side of the ARC film 53 was not within the scope of the present invention, so that the shape of the hole in the upper view had a line mark, and no shape improving effect was observed. The yoke yoke examples 4 to 6 and the comparative examples 3 and 4 show the C 〇 S gas dependency of the ACL film 52 etched, and the cos gas 4 6 6 and the comparative example 4 are used as the processing gas. Therefore, the shape change can be observed. Here, when the flow rate of the c〇s gas is 3 to 5% of the total process gas flow rate 31 201041034, a very good shape improving effect can be obtained, and a hole having a top view and a bottom shape without distortion can be formed. On the other hand, when the flow rate of the cos gas was 10% of the total process gas flow rate (Comparative Example 4), a sufficient shape improving effect was not obtained, and the shape of the bottom of the hole was observed to be distorted. From the above, it is understood that the ratio of the flow rate of the COS gas to the total process gas flow rate is preferably from 3 to 5%. On the other hand, in Comparative Example 3, since the c〇S gas was not used, the circular shape of the hole was not aligned, and no shape improving effect was observed. Further, in Comparative Examples 5 and 6, it was shown that the CF-containing gas was not used as the processing gas when etching the BARC film, and it was compared with Example 2. That is, in Comparative Example 5, Ar gas was used instead of CHF3 gas and C4FS gas as compared with Example 2. Further, in Comparative Example 6, the CHF3 gas and the C4F8 gas were not used as compared with the actual example 2', and only the ch = body was used. In Comparative Examples 5 and 6, the CF-containing gas was not used in the contact of the BARC film 53, so that the shape improving effect could not be obtained. Here, the human F-rich body is not only referred to as CF4 gas, but also refers to a gas having CHF3 gas and C4F8 gas in addition to CF4 gas. Duan Bumu, in the step of the BARC film 53 (the first step), after the ACL film 52 step (the second remaining step) is followed by the emulsion film 51 butterfly step (third (four) step), The relationship between the effect of improving the shape of the hole will be explained. ', and the == in the second embodiment of Table 2 and Table 2, after the second step, the third step 6 6 gas and hole shape improvement The relationship between effects. 32 201041034

table 3

The shape (hole opening) is judged to be ' ◎ indicates that the anti-bow shape is very good, the lanthanum indicates that a good anti-bow shape effect can be observed, and the △ indicates that the shape improvement effect can be observed, but it is not good, X It means that no anti-bow shape effect is observed. In Table 3, in the case of the etching of the oxide film 51, in the case of etching the oxide film 51, it is possible to deposit a deposit on the ACL film 52, and it is possible to ensure the film thickness of the film which functions as a mask layer. The money is engraved, whereby the cross-sectional shape of the hole is stabilized compared to Comparative Example 7 and an anti-bow shape effect is found. Further, the position of the opening of the oxide film 51 having the largest opening cross section of 33 201041034 can be increased, whereby the anti-bow shape effect can also be found. Here, the ratio of the QF6 gas to the total process gas flow rate is preferably the above, and specifically 2 to 5% is preferable. In Comparative Example 7, when the oxide film 51 is etched, the CJ6 gas is not used. Therefore, when the residual film amount of the ACL film 52 is large, the opening of the hole is narrowed, and if the opening of the hole is widened, the amount of residual film of ACL cannot be ensured. It is impossible to obtain a shape without a bow shape. A part of the gas of Example 7 was replaced with a C4Fs gas, but it was found that the opening of the hole was widened by adding QF8 gas. By replacing a part of the C4F6 gas with the C4F8 gas, the opening π of the pore can be widened and the shape can be made without breaking the residual film amount of the ACL film. In other words, in the present embodiment, when the C6F6 gas used in the etching of the oxidation T and rF^' is used as the processing gas, the gas is also contained in the liquid gas, and the gas is contained in the gas, and the gas is contained in the gas. The bright gas can make the residual of the oxide film reduce the opening, so that the side of the hole can be removed to some extent. In addition, the cj6 gas can be used to obtain sufficient surface=gas and the selection ratio is lowered. It doesn't matter. The pattern of the hole is shown in the step of the oxide film (4), the difference in the shape of the hole between the embodiment of the step of the first step and the step of the step with the back section /. Table 4 Example 11 Step 1j Step _(sec) 21〇 Back Step (sec) 210 Top CD (nm) 115 Bottom CD (nm) 71 34 201041034 Example I2 210 269 115 81 Example 13 210 328 117 86 Comparison Example 8 360 - 136 95 Comparative Example 9 396 ---- 135 89 Comparative Example 10 432 - 133 94 In Table 4, Examples 11 to 13 are directed to the ACL film 52 after the etching of the human (:] 1 film 52 is completed. The wafer W having a CD value of 95 to llOnm has a pressure of 20 mTorr (2.66 Pa) in the reaction chamber, and is a gas mixture of QF6 gas containing 60 sccm of C4F6 gas, 2 〇〇SCCm of Ar gas, and 70 sccm of 〇2 gas. The gas was processed, and the front-end etching was performed with the excitation power of 500 W, the bias electric power of 4500 W, and the etching time of 210 sec. Then, the C4F6 gas mixed gas was added and the COS gas of 10 sccm was set and 21 sec. After 269 sec and 328 sec, the post-etching is performed. The top CD and the bottom CD are the top CD measured values and the bottom CD measured values after the end of each test, and the top cd value after the end of the previous etching step. The system is 12 〇 nm. Also, Comparative Example 8 The ～10 series were etched only by the first wafers of the above-mentioned Examples 11 to 13 by using the wafers W′ of the above-described Embodiments 11 to 13 for 360 sec, 396 sec, and 432 sec, respectively, and the top CD and the bottom CD were the tops after the end of each test. CD measurement value and bottom CD measurement value. In Table 4, the top CD values of Examples 11 to 13 which were subjected to post-stage etching at the end of the test were 115 nm, 115 nm, and 117 nm, respectively, and the top CD value after the end of the previous etching step. The CD values were found to be less than 35 201041034. In contrast, the top CD values of Comparative Examples 8 to 10 after the end of the test were 136 nm, 135 nm, and 133 nm, respectively, and the steps before the steps 11 to 13 were The top CD value is found to be wider than the CD value. From the results, it can be seen that the oxidation can be prevented by preventing the top CD value from widening by the subsequent etching step using the COS gas-containing gas after the preceding etching step. The film 51 is etched. Next, a specific example of the overetching will be described. Fig. 7 shows the change in the top CD value with respect to the amount of 〇E when the overetching (0E) is performed in the examples 11 to Π and the comparative examples 8 to 10. Schema, Figure 8 Display Example and Comparative Example 8~1 u~13 () in the embodiment, the etching had embodiments cd value change at the bottom (0E) with respect to the amount of 〇E drawings. Here, in Example 11 to 00E, after the etching steps of Examples u to 13 are completed, the total etching time of the oxide film 51 is 1 〇 to 3 〇% under the same conditions as the subsequent etching step. 〇E, Comparative Example=10 OE is performed in the etching step (pre-etching step) of Comparative Example 8 to 〇, and the total etching time of the oxide film 51 is performed under the same conditions (pre-etching step). 〇~3〇%. In Fig. 7 and Fig. 8, in the case where the c: 〇s gas-containing gas is not used, in the case of increasing the 〇E ^, the top #CD value and the bottom cd value do not change, but are implemented. In the embodiment in which the c s gas is used to contain the gas after the etching step, it is found that when the amount of 〇E is increased, the top value hardly changes, and the bottom CD value gradually increases. Therefore, by using the κ yoke to carry out the 〇E under the condition of the subsequent step of the step after the gas is contained in the COS gas, the CD value of the page portion 36 201041034 can be prevented from increasing and the bottom CD value is increased. And by adjusting the 〇E time, the maximum value of the bottom CD value can be adjusted. In the above-described respective embodiments, the substrate to be electrically mounted is not limited to a wafer for a semiconductor element, but may also include an LCD (Liquid).

Various substrates or masks such as FPD (Flat Panel Dispiay) such as Crystal Display), a CD substrate, a printed circuit board, and the like. Furthermore, it is also an object of the present invention to provide a memory medium of a software program code that is useful for realizing the functions of the above embodiments to a system or device 'and by a computer (or cpu or Mpu, etc.) of the system or device. It is achieved by reading and executing the code stored in the memory medium.

......'• A wish to have a code of the code f thought media constitutes the invention. In addition, the memory media for private code supply can use floppy (note νί' CD-R' CD-RW > dvd+rw and other optical discs, and also through the network book trademark) Disc, hard disk, optical disk , cr)-R〇M DVD-ROM > DVD-RAM 'DVD-RW' 磁带 Tape, non-volatile memory card, ROM, etc. To download the code. Further, by executing the program code read by the computer, not only the functions of the above-described embodiments can be realized, but also some or all of the actual processing will be implemented on the computer (the (four) system) on the computer according to the instruction of the program. It also includes the case where the (four) county implements the functions of the above embodiments. Furthermore, the process (9) read from the memory is inserted into the memory of the function expansion unit connected to the computer 37 201041034 or the function expansion unit connected to the computer. 'According to the instruction of the code, (4) board or ship unit The CPU or the like provided includes some or all of the actual processing, and also includes the case where the functions of the above embodiments are realized by the processing. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a plan view schematically showing the configuration of a substrate processing system for carrying out the substrate processing method of the embodiment. Figure 2 is a cross-sectional view taken along line Π-ΙΙ of Figure 1. Fig. 3 is a cross-sectional view showing the structure of a semiconductor wafer to which plasma treatment is applied in a substrate processing system of the drawing. Fig. 4 is a flow chart showing the substrate processing in the substrate processing method according to the first embodiment of the present invention. Fig. 5 is a flow chart showing the substrate processing in the substrate processing method of the second embodiment. Fig. 6 (A) to (E) are diagrams showing the steps of the substrate processing method of the second embodiment. Fig. 7 is a graph showing the change in the top CD value with respect to the amount of 〇E when the OE is performed in the examples and the comparative examples. Fig. 8 is a view showing the change in the bottom CD value with respect to the OE amount when the sufficiency is performed in the embodiment and the comparative example. [Main component symbol description] S processing space W semiconductor wafer 38 201041034

10 substrate processing system 12 process module 14 wafer cassette 16 position alignment mechanism 19 transfer arm mechanism 22 reaction chamber 24 air shower head 26 transfer arm 28 first matcher 30 air gate valve 32 second damper 34 gas vent hole 36 The second matcher 50 cuts the substrate

52 ACL film (amorphous carbon film) 54 photoresist film 226 APC valve 230 gas supply unit 11 process boat 13 loading module 15 wafer cassette mounting table 17 post processing chamber 20 loading 埠 23 mounting table 25 TMP 27 loading mutual Locking module 29 vacuum gate valve 31 first damper 33 supporting portion 35 second south frequency power supply 40 operation controller 51 oxide film 53 reflection preventing film (BARC film) 55 opening portion 227 first high frequency power supply 232 temporary storage room 39

Claims (1)

201041034 Seven patent application scope: L A substrate processing method is disposed on a processing target layer, and performs a residual processing on a substrate on which a mask layer and an intermediate layer are laminated to transmit the intermediate layer and the mask layer to the processing object. The layer forming pattern shape is characterized in that: the first button etching step uses a mixed gas containing cf4 gas, chf3 gas, and QF8 gas as a processing gas, and is treated at a pressure of 100 mTorr (1.33 x 10 Pa) to 150 mTorr (2. 〇Pa) etching the intermediate layer; and a second etching step of etching the mask layer by using a gas containing a COS gas as a processing gas. A substrate processing method is performed on a substrate to be processed, and a substrate on which a mask layer and an intermediate layer are laminated is etched to form a pattern shape in the processing target layer through the intermediate layer and the mask layer. It is characterized in that it has a step of etching a layer to be processed, and etching the layer to be processed by using a gas containing a C6F6 gas as a processing gas. A substrate processing method is disposed on a processing target layer, and etches a substrate on which the mask layer and the intermediate layer are laminated, and forms a pattern shape on the processing target layer through the intermediate layer and the mask layer, wherein The processing step of the processing target layer is performed by using a C4F6 gas-containing gas as a processing gas before the etching step, and the COS gas for the hF6 gas containing gas to which the c〇s gas is added, containing 40 201041034 gas as a processing gas. A subsequent etching step is performed to etch the processing target layer. A substrate processing method for performing a etching treatment on a substrate on which a mask layer and an intermediate layer are laminated, and forming a pattern shape on the processing target layer through the intermediate layer and the mask layer, The method has the following features: ^ The first etching step is performed by using a mixed gas containing CF4 gas, CHF3 gas ribs, and a gas as a processing gas, and etching at a processing pressure of 100 mTorr (1.33 x 10 Pa) to 150 mTorr (2. 〇 xi 〇 pa). The intermediate layer; the second remaining step of etching the mask layer by using a gas containing COS gas as a processing gas; and the third etching step of etching the target layer by using a gas containing a C6F6 gas as a processing gas system. A substrate processing method for performing a etching treatment on a substrate on which a mask layer and an intermediate layer are laminated, to form a pattern shape on the processing target layer through the intermediate interlayer and the mask layer The first etching step is characterized in that a mixed gas containing a CF4 gas, a chf3 gas, and a C4F8 gas is used as a processing gas, and the processing pressure is 100 mTorr (1.33 x 10 Pa) to 150 mTorr (2. 〇 xl OPa). The intermediate layer; the second etching step etches the mask layer by using a gas containing COS gas as a processing gas; and 41 201041034 the fourth etching step is performed by using a C4F6 gas containing gas as a processing gas before the etching step, and The treatment target layer is etched by a COS gas containing gas in which the C4F6 gas contains a cos gas and a gas as a processing gas. 6. The substrate processing method according to any one of claims 1 to 4, wherein the COS gas flow rate is 3 to 5% with respect to the total process gas flow rate in the second etching step. 7. The substrate processing method according to any one of claims 1 to 4, wherein the processing pressure is 20 mTorr (2.66 Pa) or less in the second etching step. 8. The substrate processing method according to claim 2, wherein in the processing target layer etching step and the third etching step, the flow rate of the C6F6 gas in the C6F6 gas-containing gas is relative to the total processing gas flow rate. 2% or more. 9. The substrate processing method of claim 8, wherein the C6F6 gas containing gas further comprises C4F6 gas and (:/8 gas. 10. The substrate processing method according to claim 2 or 4, wherein In the processing target layer etching step and the third etching step, the processing pressure is 20 mTorr (2.66 Pa) or less. 11. The substrate processing method according to claim 3, wherein the processing target layer etching step and the fourth processing step In the etching step, the flow rate of the COS gas in the subsequent etching step is 2 to 5% with respect to the total process gas 42 201041034, and the total flow rate of the specific layer is _ _ _::3^(4) Correction (4) Processing object, such as applying for the third step or the fifth of the patent application garden, the remaining steps of the processing target layer ^ ^Preparation, "中五亥# π # μ π and the brother's etching step, This is further extended by etching for a certain period of time (over_etch). 13. The substrate processing method of claim 12, wherein the special smashing is 10 to 30% of the total etching time for the gentleman image layer. 14. - Memory _ 'The system is a computer-readable memory medium that implements a substrate processing method. The substrate processing method is on the processing target layer, and the layer is covered with a mask layer and an intermediate layer. The substrate is subjected to an etching process to form a pattern shape on the processing target layer through the intermediate layer and the mask layer, wherein the substrate processing method has: In the first etching step, a mixed gas containing cf4 gas, chf3 gas, and C4Fg gas is used as a processing gas, and the intermediate layer is etched at a processing pressure of 100 mTorr (1.33×10 Pa) to 150 mTorr (2.0×10 Pa); The mask layer is etched by using a gas containing COS gas as a processing gas; and in the third etching step, the layer to be processed is etched by using a gas containing a C6F6 gas as a processing gas system. 43 201041034 15. A memory medium, which is a computer readable memory medium storing a program for causing a computer to perform a substrate processing method. The substrate processing method is performed on a processing target layer, and a mask layer and an intermediate layer are laminated. The substrate is subjected to an etching treatment to form a pattern shape on the processing target layer by transmitting the intermediate layer and the mask layer, wherein the substrate processing method includes: a first etching step using CF4 gas, CHF3 gas, and ruthenium a mixed gas of ^8 gas is used as a processing gas, and the intermediate layer is etched at a treatment pressure of 100 mTorr (1.33 x 10 Pa) to 150 mTorr (2.0 x 10 Pa); and a second etching step is performed by etching the mask with a gas containing COS gas as a processing gas. And a fourth etching step of etching by using a C4F6 gas-containing gas as a processing gas before the etching step, and using the C4F6 gas-containing gas-containing COS gas-containing gas as a processing gas after the etching step This processing object layer. 44