201039518 六、發明說明： 【發明所屬之技術領域】 本發明係有關於一種雷射二極體設備’特別有關於雷 射二極體陣列製造微圖樣的設備及微圖樣的製造方法。 【先前技術】 顯示器面板持續朝大尺寸化及可撓性發展。為達到快 速且精择製造的效果，製造方法包括黃光顯影製程、雷射 製程、噴墨印刷製程和熱寫頭(thermal print head )印刷製 程。 傳統黃光顯影製程為成熟的半導體主流技術，其製程 複雜且自動化生產成本高。再者，C〇2雷射製程亦為目前 實際採用的製程技術，然而，其一條圖案（pattern)是由數條 圖案所組成，各條圖案之間易有線痕跡，且生產速度慢， 雷射熱源不穩定且品質不易控制。另一方面，喷墨印刷製 程製造成本低’然而喷墨液滴不易塗佈所有材質，且因液 滴的揮發與歪斜’易導致圖案品質不穩之問題。 傳統微位相差（micro retarder)結構的微位相差板包括 兩個不同位相差的區域，可藉由經過紅外線c〇2雷射加熱 處理和未經過雷射處理，形成交替相差不同區域的位相差 板。美國專利US 0，498,679，揭露使用紅外線c〇2雷射源 加熱，製作圖案化位相差膜。每次雷射掃描只加工一條細 線，由相鄰的複數條細線構成具相差差異的圖紋。 【發明内容】 201039518 本發明之一實施例提供一種雷射二極體陣列製造微圖 樣的設備，包括：一雷射二極體陣列具有至少一個雷射二 極體；其中各雷射二極體所發出的光透過一透鏡聚焦在一 第二材料層位於一第一材料層上。 本發明另一實施例提供一種雷射二極體陣列製造微圖 樣的設備，包括：一雷射二極體陣列具有至少一個雷射二 極體，其中各雷射二極體所發出的光透過一透鏡聚焦在一 第二材料層位於一第一材料層上；至少一軸驅動，以驅動 ® 第一材料層及第二材料層的移動；以及一調整裝置，以調 整各雷射二極體之間的間距。 本發明另一實施例提供一種微圖樣的製造方法，包 括：提供一雷射二極體陣列製造設備，該雷射二極體陣列 具有至少一個雷射二極體；將其中各雷射二極體所發出的 光透過一透鏡聚焦在一第二材料層位於一第一材料層上， 藉此形成微圖樣於該第一材料層上。201039518 VI. Description of the Invention: [Technical Field] The present invention relates to a laser diode device, particularly to a device for manufacturing a micropattern of a laser diode array and a method for fabricating a micropattern. [Prior Art] The display panel continues to be developed toward large size and flexibility. In order to achieve rapid and precise manufacturing, the manufacturing methods include a yellow light developing process, a laser process, an ink jet printing process, and a thermal print head printing process. The traditional yellow light development process is a mature semiconductor mainstream technology, which has a complicated process and high automation production cost. Furthermore, the C〇2 laser process is also the process technology currently in use. However, one pattern is composed of several patterns, and each pattern is easy to trace traces, and the production speed is slow, and the laser is slow. The heat source is unstable and the quality is not easy to control. On the other hand, ink jet printing processes are inexpensive to manufacture. However, ink jet droplets are not easily coated with all materials, and the problem of unstable pattern quality is liable due to evaporation and skew of the droplets. The micro-phase retardation plate of the conventional micro retarder structure includes two regions with different phase differences, which can be formed by laser irradiation with infrared c〇2 laser and without laser treatment to form phase differences of different regions with alternating phase differences. board. U.S. Patent No. 0,498,679, the disclosure of which is incorporated herein by reference to the entire entire entire entire entire entire entire entire entire entire portion Each laser scan processes only one thin line, and the adjacent plurality of thin lines form a pattern with a difference in phase difference. SUMMARY OF THE INVENTION An embodiment of the present invention provides a device for fabricating a micropattern of a laser diode array, comprising: a laser diode array having at least one laser diode; wherein each of the laser diodes The emitted light is focused through a lens on a second material layer on a first material layer. Another embodiment of the present invention provides a device for fabricating a micro pattern of a laser diode array, comprising: a laser diode array having at least one laser diode, wherein light emitted by each of the laser diodes is transmitted through a lens is focused on a second material layer on a first material layer; at least one axis is driven to drive the movement of the first material layer and the second material layer; and an adjustment device is provided to adjust each of the laser diodes The spacing between the two. Another embodiment of the present invention provides a method of fabricating a micropattern, comprising: providing a laser diode array manufacturing apparatus, the laser diode array having at least one laser diode; and each of the laser diodes The light emitted by the body is focused through a lens on a second material layer on a first material layer, thereby forming a micropattern on the first material layer.
Q 為使本發明能更明顯易懂，下文特舉實施例，並配合 所附圖式，作詳細說明如下： 【實施方式】 以下以各實施例詳細說明並伴隨著圖式說明之範例， 做為本發明之參考依據。在圖式或說明書描述中，相似或 相同之部分皆使用相同之圖號。且在圖式中，實施例之形 狀或是厚度可擴大，並以簡化或是方便標示。再者，圖式 201039518 中各元件之部分將以分別描述說明之，值得注意的是，圖 中未繪示或描述之元件，為所屬技術領域中具有通常知識 者所知的形式，另外，特定之實施例僅為揭示本發明使用 之特定方式，其並非用以限定本發明。 本揭露之一實施例提供一種使用雷射二極體陣列 (laser diode array)在加工或製造微圖樣的設備。更明確地 說，藉由雷射二極體陣列小型體積及成本低的特性，應用 在製造微圖樣之技術。 第1圖係顯示本發明之一實施例使用的雷射二極體陣 列製造微圖樣設備的架構示意圖。於第1圖中，一種雷射 二極體陣列製造微圖樣的設備100包括一雷射二極體陣列 110具有至少一個雷射二極體，其中各雷射二極體所發出 的光透過一透鏡Π0聚焦在一第一材料層上的一第二材料 層。根據本發明實施例，藉由單一雷射二極體(laser diode)， 或者多個雷射二極體所構成的陣列（laser diode array)架設 在一支撐架上並固定於一基座130上。加工工件140，例 如欲製作微圖樣的軟板，具有一第二材料層設置在第一材 料層上。加工工件140設置於基座130或控制平台上藉由 一精密軸承馬達150控制至少一軸驅動，以驅動第一材料 層及第二材料層的移動。於一實施例中，該驅動軸是用以 調整第一及第二材料層的移動速度快慢方式。 第2A和2B圖係顯示根據本發明實施例的雷射二極體 陣列的架構示意圖。請參閱第2A圖，雷射二極體陣列210 可由獨立的多個雷射二極體加工模組，例如8個錯開的雷 射二極體加工模組列。該各雷射二極體所發出的光波長位 201039518 於近紅外及可見光範圍。各個雷射二極體加工模級之雷射 二極體220 (圖示於第2B圖）固定於X-Y-Z軸微量規平二 205上，一散熱構件(heat sink) 225固定於雷射二極體2加 另一面’用以導出過剩的熱量。一聚焦透鏡230固定聚焦 鏡Z-軸於平台240上。X-Y-Z軸微量規平台2〇5為—調敫 裝置’以調整各雷射二極體210之間的間距。二 、 只％例 中，相鄰的雷射二極體之間的距離是藉由該調整震置調 ❹ 整。整體的雷射二極體陣列是藉由該調整裝置旋轉或傾 斜。此外，Z-軸於平台240為一額外的調整裝置，以調整 或移動各透鏡230和各雷射二極體21〇的相對距離。該^ 外的調整裝置亦可用以調整或移動各透鏡23〇和加工工件 (例如第一和第二材料層）的相對距離。於另一實施例中， 該額外的調整裝置可藉由Χ、Υ、Ζ三軸調整移動方式控制 各透鏡和各雷射二極體的相對距離，使得各透鏡和各雷射 二極體為同轴同中心對正排列。 〇 帛3Α圖係顯示根據本發明另—實施例的雷射二極體 陣列製造微圖樣裝置的架構示意圖。於另一實施例中，更 進一步將雷射二極體陣列製造微圖樣膜的技術，設計增列 -項功能’其-功能為檢查相差膜(retardati〇n)的穿透率變 化’另一功能為同時生產製造微相差膜（㈣加㈣，因此 能快輕產又能提升製造良率，具有生產製造競爭優勢。 叫參閱第3A圖’雷射二極體陣列製造微圖樣的裝置 包括雷射二極體陣列31〇，一加工工件32〇設置於雷射二 極體陣列310下方。雷射二極體量測光源和偵測器綱 分別設置於加工工件320的上方和下方，用以量測在加工 201039518 時工件320上微圖樣325的相差變化。於此實施例中，田 測光源330和偵測器340是以陣列的型式排列，例如第= 圖所示的三排或更緊密的排列。在進行製造微圖樣膜 程中，雷射二極體量測光源的量測方向是沿著Υ方向、 行丄而加工工件320的行進方向是沿著χ方向移動。= -實施例中’量測光源33〇和偵測器34q可為單排配列 雷射二極體陣列310,如第3B圖所示的 體 =源330和編34。構成至少一雷射光源 與雷射二極料關纽產及同步檢查 ^ 貫施例是以穿透式的Φ射冰、、盾认…〃 ’、、不I明 體量測来调Μ 田、"、欢'、丨糸統為例，即雷射二極 體H原330和偵測器340分別位於加工工件3 同側，然而應瞭解的是，亦可選 、 工工件则同j細__器姻設置於加 第4八和犯圖係顯示根據本發明另 2陣列的架構示意圖。請參閱第、雷:射： 體陣列400a可包括多個目戶斤遠雷射一極 :_如方陣或矩陣)固;於;定架：:構 :二閱第4B圖’雷射二極體陣列* 極體4 2 0b所構成的二維 已括夕们雷射一 固定於固定架4⑽上。如菱形方陣或菱形矩陣） 4A圖的雷射二極體陣^ $ _控制裝置控制第 二極體之間關距。 如的旋㈣度以㈣相鄰雷射 第5A和5B圖係+ ’…、根據本發明實施例的加工工件結 201039518In order to make the present invention more comprehensible, the following detailed description of the embodiments will be described in detail with reference to the accompanying drawings in which: FIG. It is the reference for the invention. In the drawings or the description of the specification, the same drawing numbers are used for similar or identical parts. In the drawings, the shape or thickness of the embodiment may be expanded and simplified or conveniently indicated. Furthermore, the components of the drawings 201039518 will be described separately, and it is noted that elements not shown or described in the drawings are known to those of ordinary skill in the art and, in addition, The embodiments are merely illustrative of specific ways of using the invention and are not intended to limit the invention. One embodiment of the present disclosure provides an apparatus for processing or fabricating micropatterns using a laser diode array. More specifically, the technology of manufacturing micropatterns is applied by the small size and low cost of the laser diode array. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a block diagram showing the construction of a micropatterning device for a laser diode array used in an embodiment of the present invention. In FIG. 1, a device 100 for fabricating a micropattern of a laser diode array includes a laser diode array 110 having at least one laser diode, wherein light emitted by each laser diode is transmitted through a The lens Π0 focuses on a second material layer on a first material layer. According to an embodiment of the invention, a laser diode array or a plurality of laser diode arrays are mounted on a support frame and fixed on a base 130 by a laser diode array. . The workpiece 140 is processed, for example, a soft sheet to be micropatterned, having a second material layer disposed on the first material layer. The machined workpiece 140 is disposed on the base 130 or the control platform and is controlled by at least one shaft drive by a precision bearing motor 150 to drive the movement of the first material layer and the second material layer. In one embodiment, the drive shaft is used to adjust the speed of movement of the first and second layers of material. 2A and 2B are diagrams showing the architecture of a laser diode array in accordance with an embodiment of the present invention. Referring to Fig. 2A, the laser diode array 210 can be fabricated by a plurality of independent laser diode processing modules, such as eight staggered laser diode processing module columns. The wavelength of the light emitted by each of the laser diodes is 201039518 in the near infrared and visible range. The laser diode 220 of each laser diode processing module (shown in FIG. 2B) is fixed on the XYZ axis micro gauge flat 205, and a heat sink 225 is fixed to the laser diode. 2 plus the other side 'to derive excess heat. A focusing lens 230 holds the focusing mirror Z-axis on the platform 240. The X-Y-Z-axis micro gauge platform 2〇5 is a tuning device to adjust the spacing between the respective laser diodes 210. 2. In only % of cases, the distance between adjacent laser diodes is adjusted by the adjustment. The overall laser diode array is rotated or tilted by the adjustment device. In addition, the Z-axis is an additional adjustment device on the platform 240 to adjust or move the relative distance of each lens 230 and each of the laser diodes 21A. The adjustment means can also be used to adjust or move the relative distance between each lens 23 and the workpiece (e.g., the first and second layers of material). In another embodiment, the additional adjusting device can control the relative distance between each lens and each of the laser diodes by means of three-axis adjustment movements of Χ, Υ, Ζ, so that the lenses and the respective laser diodes are Coaxial alignment is aligned with the center. The 〇 Α Α diagram shows a schematic diagram of the architecture of a micro-pattern device for fabricating a laser diode array according to another embodiment of the present invention. In another embodiment, the technique of fabricating a micropattern film by a laser diode array is further designed to add an item-function: the function is to check the transmittance change of the phase difference film (another one) The function is to manufacture micro-phase difference film at the same time ((4) plus (4), so it can produce light yield quickly and improve the manufacturing yield, and has the competitive advantage of manufacturing. Refer to the 3A figure 'Laser diode array manufacturing micro-pattern device including mine The working diode 32 is disposed under the laser diode array 310. The laser diode and the detector are disposed above and below the workpiece 320, respectively. The phase difference variation of the micropattern 325 on the workpiece 320 at the time of processing 201039518 is measured. In this embodiment, the field source 330 and the detector 340 are arranged in an array, for example, three rows or more as shown in Fig. In the process of fabricating the micropattern film, the measurement direction of the laser diode measuring light source is along the Υ direction, and the traveling direction of the workpiece 320 is moved along the χ direction. 'Measurement light source 33 〇 and Detect The device 34q can be a single row of the array of laser diodes 310, such as the body = source 330 and the code 34 shown in Fig. 3B. The at least one laser source and the laser diode are processed and synchronized. The example is a penetrating Φ-shooting ice, a shield 〃...〃, a non-I-body measurement to adjust the field, ", Huan', 丨糸, for example, the laser diode H The original 330 and the detector 340 are respectively located on the same side of the workpiece 3, however, it should be understood that the workpiece is also optional, and the workpiece is arranged in the same manner as the fourth and the map is displayed according to the present invention. 2 Schematic diagram of the array. Please refer to the thunder: Shooting: The body array 400a can include multiple targets: a square matrix or a matrix); in the frame: frame: 2: Figure 4B The two-dimensional radiant laser formed by the laser diode array* pole body 4 2 0b is fixed on the fixing frame 4 (10). For example, a diamond square matrix or a diamond matrix) The laser diode array of the 4A diagram ^ $ _ control device controls the distance between the second polar bodies. Such as the rotation (four) degree with (four) adjacent lasers 5A and 5B graphics + '..., processing workpiece knots according to embodiments of the present invention 201039518
構示意圖。用於雷射二極體陣列製造微圖樣的加工工件包 括第二材料層520設置於第一材料層510之上。第一材料 層510可為一欲微圖樣之膜材。於另一實施例中，第二材 料層520可為雷射光吸收膜，例如可吸收雷射光的黑色PET 膜。第二材料層520是以膠或靜電貼附於第一材料層510 上。或者，該第二材料層520為一含染料色劑層直接形成 於第一材料層510上。利用雷射二極體(laser diode)所提供 功率(power)產生紅外（IR)光，直接照射在第一材料層510 上的第二材料層520 (例如黑色保護膜或者雷射吸收層）， 以形成有序的且具不同相差的微圖樣515A、515B (如第5B 圖所示）’最後移除或揭下第一材料層510上的第二材料層 520 ° 於進行雷射二極體陣列製造微圖樣的過程時，各個雷 射可固定於一測試機械臂上，用以測試雷射二極體(testing robot of laser diode)。在欲微圖樣膜之路徑上，利用精密軸 承馬達將欲微圖樣膜進行驅動，並利用雷射二極體（kser diode)所提供功率(p0wer)產生紅外(ir)光，直接照射在欲製 造微圖樣之膜上的黑色保護膜（或者雷射吸收層）。由於所 使用的黑色保護膜（或雷射吸收層）具有耐高溫、不反射光 源、及不易讓光穿透的特性，使得雷射二極體所發射的光 在極短時間被轉成熱能，進而利用此熱能來形成微圖樣於 膜上。應瞭解的是，利用所述雷射二極體陣列（laser di〇de array)加工微圖樣膜的製造方法與裝置，配合精密轴承馬 達’將欲微圖樣之膜材進行驅動的速度控制，可構成快速 生產的雷射二極體陣列設備。再者，可將雷射二極體陣列 201039518 ^十成掃描（scan)各種不同間距 實施例中，利用里由仅褚邮 U汞於另— (或例如雷射吸收層，其需塗佈 再去除）’在雷射二極體加工製造後撕去即可 P ’可充分利用原來保護膜無用的特性)。 ’、 於另—一實施例中，藉由使用雷射二極體陣列（如第3 3B圖所不）的輕小易排列生產的特性，能快速 之膜材，卜、+、姑& + 1 双&做圖樣 上述特性在大尺寸微圖樣製造之膜材就顯得非火 、其主要原理是讓雷射二極體所發出紅外光直接透= 凸透鏡’聚焦在欲製造微圖之膜材上的黑色保護 ^ )值得注意的是，此黑色保護膜具有耐高溫、 透夯、》π 小易 不易光反射的材料特性。因此，由雷射二極 發屮φ、、β w霞所 威輕易被黑色保護膜吸收而轉換成熱源，由於黑 色保濩膜平貼在欲製造微圖樣之膜材表面上，是為了保1 膜材避免刮傷及損害 ，因此當黑色保護膜吸收紅外光而產 又（例如超過65°C時）’則此和黑色保濩膜（吸收層）相 貼合的欲製造微圖樣之膜材，因黑色保護膜（或雷射吸收層） 熱源傳導的影響使欲製造微圖樣之膜材受熱而產生線條圖 案（例如微位相差變化(retardation))。因此，黑色保護祺一 來可當欲微圖樣膜材之保護膜使用，二來可當吸收層將雷 射一極體的光吸收轉變成熱源來製造微圖樣膜材。當雷射 一極體加X黑色保護膜而產生有圖樣或位相差變化的微圖 樣膜材後，只要撕去黑色保護膜即可。於另一實施例中， 如果使用雷射吸收層之方式，則可先將雷射吸收層塗佈在 右人微圖樣之膜材（retarder)上，待雷射加工後，再去除雷射 吸收層。由此，則微圖樣膜材可快速製造而獲彳于。 201039518 再者，於另一實施例中，其基本構想為將一雷射二極 體（或雷射二極體陣列）架設在用於此雷射二極體的測試臂 (testing robot of laser diode)的欲微圖樣膜材路徑上，利用 精岔軸承馬達將欲微圖樣膜材進行驅動，並利用雷射二極 體所提供功率產生紅外光’直接照射在欲微圖樣膜材上的 黑色保4膜（或雷射吸收層）。因為使用的黑色保護膜（或雷 射吸收層）具有财高溫、不反射光源、及不易讓光穿透的特 性，因此能將雷射發射的光在極短時間内轉成熱，進而利 用此熱源、來形成微圖樣於膜材上。 口此，利用各種不同的雷射二極體陣列的排列方式（例 ^將雷射二極體陣列設計成可掃描各種不同的間距線條圖 孝· )，gp . ° 一次處理多條圖樣(pattern)，配合研發的黑色保 膜（例如雷射吸收層）將光轉變成熱源，讓黑色保護膜（雷 變$收層）的熱源’影響下一層的膜材而產生結構或位相差 12 ί、^即用體積小的雷射二極體陣列所發射的光間接(被 ❹ #呆護犋或雷射吸收層所接收)產生熱，利用此熱源來快 護膜♦圖樣膜材，當雷射二極體所發射的光照射黑色保 π ^ ^雷射吸收層）完畢後可撕掉黑色保護膜（或利用雷射 後再θ万式，則需先塗佈在欲加工的膜上，待雷射加工 、束制Ϊ除雷射吸收層則可獲得微圖樣於膜材上，具有快 k衣k及生產成本低的製造優勢。 一，另〜實施例中，利用雷射二極體陣列（例如第3圖所 / | \ >^4- 支生/山人 &圖樣之设備）’藉由雷射二極體陣列（laser diode array)體籍 τ, ^ 、小及成本低的特性（例如雷射二極體的最大輸出 初竿可為7 …' w’波長可為808nm)’配合雷射二極體控制器（電 201039518 流控制範圍可為〇至士 4A)用在微位相差膜的製造應用，可 解決傳統C02雷射體積大、成本高、應用於製造微位相差 膜速度慢的問題。再者，相鄰的雷射二極體之間的間距 (pitch)為可調整方式，用來製造各種不同間距(pitch)的線條 圖案。另外，此雷射二極體陣列（laser diode array)亦可旋轉 及傾斜排列，達到不同間距(pitch)的掃描（scan)方式（如第 4A、4B圖所示），在大尺寸微圖樣加工之膜材應用是很具 潛力的技術之一。 本發明雖以各種實施例揭露如上，然其並非用以限定 本發明的範圍，任何所屬技術領域中具有通常知識者，在 不脫離本發明之精神和範圍内，當可做些許的更動與潤 飾，因此本發明之保護範圍當視後附之申請專利範圍所界 定者為準。 201039518 【圖式簡單說明】 第1圖係顯示本發明之一實施例的使用雷射二極體陣 列製造微圖樣設備的架構示意圖； 第2A和2B圖係顯示根據本發明實施例的雷射二極體 陣列的架構不意圖， 第3A和3B圖係顯示根據本發明實施例的雷射二極體 陣列製造微圖樣設備的架構示意圖； 第4A和4B圖係顯示根據本發明另一實施例的雷射二 極體陣列的架構示意圖；以及 第5A和5B圖係顯示根據本發明實施例的加工工件結 構示意圖。 【主要元件符號說明】 100〜雷射二極體陣列加工製造微圖樣的設備； 110〜雷射二極體陣列； 120〜聚焦透鏡； 130〜基座， 140〜加工工件； 150〜精密軸承馬達； 205〜X-Y-Z軸微量規平台； 210〜雷射二極體陣列； 220〜雷射二極體； 225〜散熱構件(heat sink); 230〜聚焦透鏡； 201039518 240〜聚焦鏡Z-轴於平台； 300a、300b〜雷射二極體陣列製造微圖樣的裝置； 310〜雷射二極體陣列； 320〜加工工件； 325〜微圖樣； 330〜雷射二極體量測光源； 340〜偵測器； X〜加工工件的行進方向； Y〜雷射二極體量測光源的量測方向； 400a、400b〜雷射二極體陣列； 410a、410b〜固定架； 420a、420b〜多個雷射二極體； 510〜第一材料層； 515A、515B〜不同相差的微圖樣； 520〜第二材料層。Schematic diagram. The machined workpiece for the micro-pattern of the laser diode array includes a second material layer 520 disposed over the first material layer 510. The first material layer 510 can be a film of a micropattern. In another embodiment, the second material layer 520 can be a laser light absorbing film, such as a black PET film that absorbs laser light. The second material layer 520 is adhered to the first material layer 510 by glue or static electricity. Alternatively, the second material layer 520 is formed directly on the first material layer 510 by a dye containing toner layer. Generating infrared (IR) light using power provided by a laser diode to directly illuminate a second material layer 520 (eg, a black protective film or a laser absorbing layer) on the first material layer 510, To form an ordered and different phase difference micro pattern 515A, 515B (as shown in FIG. 5B) 'finally remove or remove the second material layer 520 ° on the first material layer 510 to perform the laser diode When the array is used to fabricate a micropattern, each laser can be attached to a test robot to test a testing robot of laser diode. On the path of the micropattern film, the micropattern film is driven by a precision bearing motor, and the infrared (ir) light is generated by the power supplied by the laser diode (p0wer), and is directly irradiated to be manufactured. A black protective film (or laser absorbing layer) on the film of the micropattern. Since the black protective film (or the laser absorbing layer) used has the characteristics of high temperature resistance, non-reflecting light source, and light penetration, the light emitted by the laser diode is converted into heat energy in a very short time. This thermal energy is then utilized to form a micropattern on the film. It should be understood that the manufacturing method and device for processing the micro pattern film by using the laser diode array can be combined with the precision bearing motor to control the speed of the film to be micropatterned. A laser diode array device that constitutes rapid production. Furthermore, the laser diode array 201039518 can be scanned in various different pitch embodiments, using only the U-mercury in another (or for example, a laser absorbing layer, which needs to be coated again). Remove) 'After the laser diode is manufactured and removed, P' can make full use of the original protective film's useless characteristics. In another embodiment, by using the characteristics of the light and small array production of the laser diode array (as shown in FIG. 3B), the film can be quickly formed, and the film, the film, the +, the & + 1 double & pattern The above characteristics are not fired in the large-size micro-patterned film. The main principle is to let the infrared light emitted by the laser diode directly pass through. The convex lens is focused on the film to be micro-imaged. Black protection on the material ^) It is worth noting that this black protective film has the characteristics of high temperature resistance, transparency, and π small easy to light reflection. Therefore, it is easily absorbed by the black protective film and converted into a heat source by the laser diode φ, β w Xia Wei, because the black film is flatly attached to the surface of the film to be micropatterned, in order to protect 1 The film is protected from scratches and damage, so when the black protective film absorbs infrared light and is produced (for example, when it exceeds 65 ° C), the film which is attached to the black protective film (absorbent layer) is to be fabricated. Due to the influence of the heat conduction of the black protective film (or the laser absorbing layer), the film to be micropatterned is heated to produce a line pattern (for example, a micro-level retardation). Therefore, the black protective layer can be used as a protective film for the micropattern film, and the micro-pattern film can be manufactured by converting the light absorption of the laser body into a heat source. When the laser body is added with a black protective film to produce a micropatterned film with a pattern or phase difference, simply remove the black protective film. In another embodiment, if a laser absorbing layer is used, the laser absorbing layer may be first coated on the right person micropatterned film, and after laser processing, the laser absorbing is removed. Floor. Thereby, the micropattern film can be quickly manufactured and obtained. 201039518 Furthermore, in another embodiment, the basic idea is to mount a laser diode (or a laser diode array) on a test robot for the laser diode (testing robot of laser diode) On the path of the micropatterned film, the micropatterned film is driven by a precision bearing motor, and the infrared light is supplied by the power provided by the laser diode to directly illuminate the black film on the micropatterned film. 4 film (or laser absorbing layer). Because the black protective film (or laser absorbing layer) used has the characteristics of high temperature, non-reflecting light source, and light penetration, it is possible to convert the light emitted by the laser into heat in a very short time, thereby utilizing this. A heat source is formed to form a micropattern on the film. In this case, the arrangement of various laser diode arrays is used (for example, the laser diode array is designed to scan various different pitch lines), gp. ° Process multiple patterns at once (pattern ), with the development of a black film (such as a laser absorbing layer) to convert light into a heat source, so that the black protective film (the heat source of the thunder) can affect the film of the next layer to produce a structure or phase difference of 12 ί, ^Using the light emitted by the small-sized laser diode array indirectly (received by the 呆# 犋 犋 or the laser absorbing layer) generates heat, using this heat source to quickly protect the film ♦ pattern film, when the laser After the light emitted by the diode is irradiated to the black π ^ ^ laser absorbing layer, the black protective film can be peeled off (or after the laser is used, the θ million type is applied to the film to be processed, and the film is to be processed. Laser processing and beam removal of the laser absorbing layer can obtain micropatterns on the film, which has the advantages of fast k-coating k and low production cost. 1. In another embodiment, a laser diode array is utilized. (For example, Figure 3 / | \ >^4 - Supporter/Mountain & Drawing Equipment)' The laser diode array has the characteristics of τ, ^, small and low cost (for example, the maximum output initial of the laser diode can be 7 ... 'w' wavelength can be 808 nm) 'cooperate The laser diode controller (electricity 201039518 flow control range can be 〇至士4A) is used in the manufacturing application of micro-phase phase difference film, which can solve the traditional large volume and high cost of C02 laser, and is used to manufacture micro-phase phase difference film speed. The problem of slowness. Furthermore, the pitch between adjacent laser diodes is adjustable to produce various pitch patterns of the pitch. In addition, the laser diode array ( Laser diode array) can also be rotated and tilted to achieve different pitch scanning methods (as shown in Figures 4A and 4B). It is a promising technology for large-scale micropattern processing. The present invention is not limited to the scope of the present invention, and may be made by those skilled in the art without departing from the spirit and scope of the present invention. Change and retouch, so this The scope of the invention is defined by the scope of the appended claims. 201039518 [Simplified Schematic] FIG. 1 shows an architecture for fabricating a micropattern device using a laser diode array according to an embodiment of the present invention. 2A and 2B are diagrams showing the architecture of a laser diode array according to an embodiment of the present invention, and FIGS. 3A and 3B are diagrams showing the fabrication of a micro pattern device by a laser diode array according to an embodiment of the present invention. 4A and 4B are schematic views showing the structure of a laser diode array according to another embodiment of the present invention; and 5A and 5B are schematic views showing the structure of a workpiece according to an embodiment of the present invention. [Major component symbol description] 100~ laser diode array processing equipment for manufacturing micropatterns; 110~laser diode array; 120~focus lens; 130~ pedestal, 140~machined workpiece; 150~ precision bearing motor 205~XYZ axis micro gauge platform; 210~laser diode array; 220~laser diode; 225~ heat sink; 230~focus lens; 201039518 240~focus mirror Z-axis on platform ; 300a, 300b ~ laser diode array manufacturing micro-pattern device; 310 ~ laser diode array; 320 ~ processing workpiece; 325 ~ micro-pattern; 330 ~ laser diode measuring light source; 340 ~ Detect Tester; X~ machining direction of workpiece; Y~ measurement direction of laser diode measuring light source; 400a, 400b~ laser diode array; 410a, 410b~ fixed frame; 420a, 420b~ Laser diode; 510~ first material layer; 515A, 515B~ different phase difference micro pattern; 520~ second material layer.