201039392 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種微細結構的製造方法，特別是一種具有微 細結構之電子元件的製造方法及電晶體的製造方法。 【先前技術】 知：’對電晶體元件而言’通道間隙（Channel Length )的尺寸 為電晶體結構中最重要因素之一。其原因在於此通道間隙尺寸決 疋了操作電流及元件的反應時間。但習知的噴墨製成技術僅能達 到大於20um線距。這樣的技術限制使得噴印式驅動元件製成雷晶 體元件的通道間隙無法更加細微化。這樣的問題對載子遷移率較 差的有機半導體更為嚴重。 為了克服上述困難，習知技術提出了以下的技術。例如美國 早期公開第2006/0160276號的專利申請，此專利係經由製造一種 具有高低段差的基板，並且經由喷印導電墨水的方式，於基板的 凹槽部位中製作源極、汲極。另一種習知技術如美國早期公開第 2007/0105396號的專利申請，此專利係揭露一種使用刷子將材料 刷到基板表面的技術。再者，另有類似的技術揭示於微小透鏡的 相關製程中，如美國早期公開第2008/0007836號的專利申請。 除了上述的技術外，更有一習知技術是採用黃光顯影及電漿 處理，來製作疏水性的聚驢亞胺（p〇lyimide)。之後經由聚醯:亞胺 來製作較細微的通道間隙。另外，習知技術亦可以利用電子束 (E-beam)或電漿來對一基板表面進行表面處理。之後利用基板 201039392 表面能量的差里，宁#山[ 【發明内容】一義出:人微米⑽一… 根據本發明之—餘 、止方法，Λ ""骑聽具有微細結構之電子元件的製 ^ ”匕括以下的步驟。首先楹供#θ. " 面。之後m + f蛛供—基板，其具有-基板表 η平的視《/ 料壓印於基板表面以形成-微米或次 表二=或斥!圖樣’並使親液或斥液圖樣與基板之間具有- Ο 〇 以二水因#接1’以噴墨的方式，將—墨水喷塗於基板表面上， ^、面能差異，而自我對準於親液或斥液圖樣，以 -對應上叙親液鱗液·的微細結構。 根據本發明之另—實施例所揭露電晶體的製造方法，盆包括 以下的步驟。首先提供—絲，其财-基板表面。之後，將一 表面處理材料壓印於基板表面以定義—斥液的通道區以及一非電 極區域，射絲絲未•卩表面處爾料之赋定義出親液的 :源極區以及—汲極區。接著，以嘴墨的方式，將-導電墨水噴 、」反表面_L以使導電墨水在親液的源極區以及没極區上自 我對準而形成__以及—汲極。然後，於源極、祕以及基板 《成半‘體層，再於半導體層上形成—介電層。接著於介電 層上形成一閘極。 根據本發明之—實施例所揭露另-電晶體的製造方法，其包 括以下的步驟。首先提供—基板，其包括-基材…位於基材上 的閘極以及-倾_上的介電層。接著，將—表面處理材料壓 印於介電層表面’蚊義—斥㈣通道區以及—非電極區域，其 5 201039392 中介電層表面未壓印表 源極區 一、、 一 、處理材料之區域定義出親液的 乂及一及極區。之么，+ 声夺 & 轉的方式，將-導電墨水噴塗於介雷 層衣面上，以使導電墨 罨 &隹親液的源極區以及汲極區上自我淮 而形成1極以及一没極 我封τ 成-半物層。 4，於源極、疏以及介電層上形 從配合圖不作貫施例詳細說明如 為使本發明能更明顯易僅， 下 【實施方式】 根據本發日_揭露具有微細結構之電子元件㈣造方法，係 使基板與親液或斥液圖樣之間具有—表面能差異，主要的傲法可 分為—種方式’第―齡式錄具親祕的基絲面壓印有斥液 樣而第一種方式則是在具斥液性的基板表面麗印有親液圖 樣而在以下之具體實施例中，係以親液的基板表面壓印有斥液 ^樣作為本發明之貫補說明，當然本發明之紐顧不以下述 只Ο為限其亦包含有在斥液的基板表面壓印有親液圖樣之技 術手段。 ^閱第1A圖」至「第1H圖」所示，其係為根據本發明 一實施例的製造流程示意圖。 如「第u圖」所示，經由微影_製程，在一模板1〇上形 成一微米或次微米的圖樣U。 、如第13圖」所示，以此模板1〇當作模仁。於模板1〇上形 成-液狀可撓性高分子層2〇,魏狀可撓性高分子層加可為聚二 201039392 甲基石夕氧文元（P〇ty Di~Methyl Siloxane ; PDMS)。 如第1C圖」所示，加熱第iB圖所示的液狀的可撓性高分 子層20，以使可撓性高分子層2〇凝固成型。之後將可撓性高分子 層2〇與模板10分離，並且以可撓性高分子層2〇做為一轉印模 3〇八中轉印松3〇具有一轉印模表面3卜並且轉印模表面幻具 有一凸起的轉印圖樣。 “如「第m圖」所示，之後，將—表面處理材料幻形成於轉 印模表面31凸起的轉印圖樣上。其中表面處理材料32可為十八 烧基三氣魏（0TS)、四氳全氟辛絲三氯魏（f〇ts)或是里 他斥液性的材料。 ' 3如「第1E圖」所示，提供-基板40，其中基板40的材質可 以疋石夕日日片材料 '玻璃基板材料或可撓性基板材料。之後可使 f表面處理或是紫外光臭氧處理基板㈣表面，使得基板40 〇 表面形成—親祕。⑽，本翻縣板如形錢祕的方式， ^不侷限上述的電絲面翻或是斜光臭械歡技術手段， /'亦可經由在基板40表面成長―親液性的自組裝薄膜，或是 板4〇表面成長一具電解質高分子薄膜，對基板40進行表面處理土 以使基板40的表面具有親液性。 处里， 如「第1F圖」、「第沁圖 方式將轉印㈣塊_轉㈣轉;二(4=彳 使轉印㈣在基㈣表面均成—斥制樣4 = 與基板40之财有—表面能麵。 且斥賴 201039392 κ當然，本㈣並不紐上述在親㈣基板上騎有斥液圖樣 之仪術手&，本發明亦可在基板表面進行處理而形成一斥液性， 並以轉鴨在基板表面上形成—親液圖樣，使得親賴樣與斥液 的基板之間具有一表面能差異。 如「第1Η圖」所示，經由-微流體產生裝置50以嘴墨的方 式（Ink Jet Printing)，將一墨水51喷塗於基板4〇表面上，並中黑 水51係-溶液’例如是—水溶液，射麟液可以是—導電餘 液或是絕緣性溶液。由於第iG圖所示的斥液圖樣Μ是具有斥液 性’以使墨水因表面能差異，而使得墨水51會自我集中於基板仞 表面之未被斥液_41所覆蓋_域上，進而形成—對應於如第 1G圖所示的斥液圖樣41的微細結構42。 是以，上述之具體實施财，係在職的基板表碰印有斥 液圖樣，並以墨水噴塗基板，以形成對應於斥液圖樣的微細結構， 此僅為-較佳具體實施例之說明，並不侷限本發明之專利保護範 圍。本發_可對基絲面進行處理，崎得基板表面具有一斥 液性，並在斥㈣基板表面壓印魏㈣樣，進而在基板上形成 對應親賴樣的微細結構。故，本發要係在基板與所壓㈣ 圖樣之間具有-表面能差異，於墨水噴塗時，藉由此表面能差異 形成對應的微細結構。是以，此種以斥液圖樣歷印在親液基板上， 或是以親液圖樣塵印在斥液基板上的技術手段，均同理包 發明之專利保護範圍内。 基於上述的技術，在本發明的另—實施例中，其更可以利用 201039392 上述的技術製作電晶體。請參閱「第2A圖」至 -其係為根據本發明之另—實施例的製造流程示意圖。 乐-β圖」所示，將轉印模30的表面處理材料32壓印到基 板丄〇表面上’以在基板4〇表面上定義一斥液的通道區以及一非 ’其中该基板4〇表面未壓印該表面處理材料32之區域 ^別定義出親液的-_區43減—汲健44。當然[Technical Field] The present invention relates to a method of manufacturing a fine structure, and more particularly to a method of manufacturing an electronic component having a fine structure and a method of manufacturing a transistor. [Prior Art] It is known that 'the size of the channel length for the transistor element is one of the most important factors in the crystal structure. The reason for this is that the channel gap size determines the operating current and the reaction time of the component. However, conventional ink jet fabrication techniques can only achieve line spacings greater than 20um. Such technical limitations have made it possible to make the channel gap of the print-type driving element into a slewing element less precise. Such problems are more serious for organic semiconductors with poor carrier mobility. In order to overcome the above difficulties, the prior art proposes the following techniques. For example, a patent application of U.S. Patent Application Publication No. 2006/0160276, which is incorporated herein by reference, discloses a substrate having a high and a low step, and by means of printing a conductive ink, a source and a drain are formed in the recessed portion of the substrate. Another conventional technique is the patent application of U.S. Patent Publication No. 2007/0105396, which discloses a technique of using a brush to brush a material onto a substrate surface. Further, a similar technique is disclosed in the related art of the microlens, such as the patent application of the U.S. Patent Publication No. 2008/0007836. In addition to the above techniques, a conventional technique is to use a yellow light development and a plasma treatment to produce a hydrophobic polypimide. A finer channel gap is then made via polyfluorene: imine. In addition, conventional techniques may also utilize an electron beam (E-beam) or plasma to surface treat a substrate surface. After using the substrate 201039392 surface energy difference, Ning #山[ [Abstract] one meaning: human micron (10) a... According to the present invention - the remainder, stop method, Λ "" ride the electronic components with fine structure The system consists of the following steps: first, the #θ. " face. After m + f spider supply substrate, which has a - substrate table η flat view / / material imprinted on the substrate surface to form - micron or The second table = or repulsion! The pattern 'and the lyophilic or repellency pattern and the substrate have - Ο 〇 二 因 # # ' ' ' ' ' ' ' ' ' ' 喷墨 喷墨 喷墨 喷墨 喷墨 喷涂 喷涂 喷涂 喷涂 喷涂 喷涂 喷涂 喷涂 喷涂 喷涂 喷涂 喷涂 喷涂 喷涂The surface energy can be different, and self-aligned with the lyophilic or repellency pattern, corresponding to the fine structure of the lyophilic squamous liquid. According to another embodiment of the present invention, the method for manufacturing the crystal lens includes the following The first step is to provide a silk-fibrous-substrate surface. Thereafter, a surface treatment material is imprinted on the surface of the substrate to define a channel region for the liquid repellency and a non-electrode region, and the surface of the filament is not covered. The definition of lyophilic: source area and - bungee area. To ink mouth manner, - a conductive ink ejection, "_L counter surface so that the conductive ink to form a self-aligned on the __ and the lyophilic region and the source region is not - drain. Then, at the source, the secret, and the substrate, a half-body layer is formed, and a dielectric layer is formed on the semiconductor layer. A gate is then formed over the dielectric layer. A method of manufacturing another transistor according to the embodiment of the present invention includes the following steps. First, a substrate is provided which includes a substrate, a gate on the substrate, and a dielectric layer on the - tilt. Next, the surface treatment material is imprinted on the surface of the dielectric layer 'Mosquito-repellent (four) channel region and - non-electrode region, 5 201039392 The surface of the dielectric layer is not embossed the source region of the meter, one, the processing material The area defines lyophilic sputum and one and polar regions. What, + Acoustic & turn, the conductive ink is sprayed on the clothing surface of the Jielei layer, so that the conductive ink 罨 & 隹 隹 lyophilic source region and the bungee region on the self-health to form a pole And one is not very good, I seal the τ into a half layer. 4, on the source, the sparse and the dielectric layer, the shape is not described in detail. For the purpose of making the present invention more obvious, the following [Embodiment] According to the present invention, an electronic component having a fine structure is disclosed. (4) The method of making the surface has a difference in surface energy between the substrate and the lyophilic or repellency pattern. The main method of arbitrage can be divided into a kind of method. The first method is to print a lyophilic pattern on the surface of the substrate having liquid repellency. In the following specific embodiment, the surface of the lyophilic substrate is imprinted with a repellency sample as the present invention. In addition, the present invention is not limited to the following, and it also includes a technical means of imprinting a lyophilic pattern on the surface of the liquid-repellent substrate. Referring to Figures 1A through 1H, there is shown a schematic diagram of a manufacturing process in accordance with an embodiment of the present invention. As shown in Fig. u, a one-micron or sub-micron pattern U is formed on a template 1 through a lithography process. As shown in Figure 13, the template 1 is used as a mold. Forming a liquid flexible polymer layer 2〇 on the template 1〇, and the Wei-like flexible polymer layer may be a poly-201039392 methyl Pythmite element (PDMS) . As shown in Fig. 1C, the liquid flexible polymer layer 20 shown in Fig. iB is heated to solidify the flexible polymer layer 2 crucible. Then, the flexible polymer layer 2〇 is separated from the template 10, and the flexible polymer layer 2 is used as a transfer mold. The transfer sheet 3 has a transfer mold surface 3 and is transferred. The surface of the stamp has a convex transfer pattern. "As shown in the "mth image", after that, the surface treatment material is formed on the transfer pattern of the projection surface 31 of the transfer mold. The surface treatment material 32 may be an eighteenth-burning three gas Wei (0TS), a tetrahydrofluorene octane trichloropropane (f〇ts) or a liquefied material. As shown in Fig. 1E, a substrate 40 is provided, wherein the material of the substrate 40 can be a glass substrate material or a flexible substrate material. The surface of the substrate (4) can then be treated with f surface treatment or ultraviolet ozone to form a surface of the substrate 40 - secret. (10), the method of the shape of the plate is not limited to the above-mentioned method of wire surface turning or oblique light odor, / ' can also grow through the surface of the substrate 40 - lyophilic self-assembled film, Or an electrolyte polymer film is grown on the surface of the plate 4, and the substrate 40 is surface-treated to make the surface of the substrate 40 lyophilic. In the place, such as "1F map", "the first map mode will transfer (four) block _ turn (four) turn; two (4 = 彳 make transfer (four) on the base (four) surface are formed - repulsion sample 4 = with the substrate 40 Finance - surface energy. And rely on 201039392 κ, of course, this (four) does not New Zealand on the pro (four) substrate riding the repulsion pattern of the instrument hand &, the invention can also be processed on the substrate surface to form a reprimand Liquid-like, and forming a lyophilic pattern on the surface of the substrate by the duck, so that there is a surface energy difference between the substrate and the substrate for repellency. As shown in the "Fig. 1", the microfluidic generating device 50 is provided. Ink Jet Printing, an ink 51 is sprayed on the surface of the substrate 4, and the black water 51-solution is, for example, an aqueous solution, and the spray liquid can be - conductive residual liquid or insulated. The solution is because the liquid repellency pattern shown in the i-th image is liquid-repellent' so that the ink 51 is self-concentrated on the surface of the substrate by the liquid-repellent_41. Further, a fine structure 42 corresponding to the liquid repellency pattern 41 as shown in Fig. 1G is formed. For the specific implementation, the in-service substrate table is printed with a liquid repellency pattern, and the substrate is sprayed with ink to form a fine structure corresponding to the liquid repellency pattern. This is only a description of the preferred embodiment, and is not limited thereto. The scope of patent protection of the invention. The hairline can be treated on the surface of the substrate, and the surface of the substrate has a liquid repellency, and the surface of the substrate is embossed on the surface of the substrate, thereby forming a fine sample on the substrate. Therefore, the present invention has a surface energy difference between the substrate and the pressed (four) pattern, and the corresponding fine structure is formed by the difference in surface energy when the ink is sprayed. The technical means printed on the lyophilic substrate, or printed on the liquid-repellent substrate by the lyophilic pattern, is within the scope of the patent protection of the invention. Based on the above-mentioned technology, in another embodiment of the present invention, It is also possible to fabricate a transistor by the technique described in 201039392. Please refer to "FIG. 2A" to - a schematic diagram of a manufacturing process according to another embodiment of the present invention. The transfer mode 30 is shown in the Le-β diagram. Surface treatment The material 32 is embossed onto the surface of the substrate ' to define a repellency channel region on the surface of the substrate 4 and a region where the surface of the substrate 4 is not embossed with the surface treatment material 32. The liquid -_ area 43 minus - 汲健44. Of course
印模30的壓印之舒,_ TW 〇 ”本錢縱可輯紐4G表φ進行表面處 土，以使基板40表面具有親液性。 性2^_则W㈣_、麵_料或可撓 =材科。之後使權表面處理或是紫外光臭氧處 =中嫌⑼’在本發明的其他 膜，或θ ㈣於餘4G表面成長-親祕的自組裝薄 、s疋於基板40表面成長一且電解 — 進行#面#神、± ，、病貝间分子缚膜，對基板40 ❹ 、 ’以絲板40的表面具有親液性。 如弟2C圖」所示，接基於、，塔缸.广j m±fE50 “、°°° 3與汲極區44使用微流 耻座生衣置50喷印導電性墨水52。由 道區以及非雷朽p·祕命被』 θ斤不的斥液的通 匕乂及非電極£域與基板4G之間 極區44上形成一源極6〇及 "在源極區43輿汲 .ρ„Λ/ , 〆及極61 ’進而於源極60盥汲極61 之間形成對應如第2Β圖所示的微細結構42。 ^ 如「第2D圖」所示，在源極60及汲極61上方 體層7〇。再於半導體層7〇 上方形成有-丰導 上方Φ成-介電層⑽，最後位於 9 201039392 60與汲極61之間的介電層80表面形成一閘極纪 另外，請參閱「第3A圖」至^ ^ 。 乐圖」所示，係兔括缺丄 發明再一實施例的製造流程示意圖。 、馬根據本 M如第3A圖」所示，袒版 基板40,，其中基板40,包括一基材 托供一 80。閘極63位於基材90上，並且 ”電層 9〇上。 電層80位於閑極63與基材 如「第3Β圖」所示，之後可使用紫外光臭氧處理或電 處理一介電層80表面，使得介電展 ^ 电層80表面形成親液的特性。者 然，在本發明的其他實施财，亦可不使用上述步驟或可❹^ 於介電層80表面成長—親紐的自__，或是於介電声⑽ 表面成長-具f解f高分子義，對介料8q進行表錢^以 使介電層80的表面具有親液性。 如第3C圖」、「第3D圖」所示，經由壓印的方式將轉印模 3〇上的表面處理材料32轉印到介電層8〇表面上，以使轉印模邓 在介電層80表面上形成一斥液的通道區以及一非電極區域，其中 該介電層80表面未壓印該表面處理材料幻之區域分別定義出親 浪的一源極區82以及一汲極區83。 如「第3E圖」所示，接著於源極區幻與没極區83使用微流 碟產生裝置5〇噴印導電性墨水Μ。由於第犯圖所示的斥液的通 道區以及非電極區域與介電層8G之間的表面能差異，導電性墨水 52會自我集中對準至源極區82與汲極區83，並在源極區幻與没 濟區83上形成一源極6〇及一汲極61。 201039392 如罘π圓」所示，在源極6〇盥 體層70。 /、次倥上方形成有一半導 根據本發明電晶體的 電氧化物材料轉一懸63可為金屬材料、導 電性墨水^子轉。而形成源極60及沒極㈣導 ΟThe stamping of the stamp 30, _ TW 〇 本 本 纵 纵 纽 纽 纽 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 After the surface treatment or ultraviolet light ozone = neutral (9) 'in other films of the invention, or θ (four) on the surface of the remaining 4G growth - secret self-assembly thin, s 成长 on the surface of the substrate 40 grows one And electrolysis - carry out #面#神,±,, and inter-molecular binding film, on the substrate 40 ❹, 'has lyophilicity on the surface of the silk plate 40. As shown in Figure 2C, Wide jm±fE50 ", ° ° ° 3 and the bungee area 44 using microfluidic shame clothes set 50 printing conductive ink 52. By the road area and non-returning p · secret life" A source 6〇 and a “source region 43舆汲.ρ„Λ/ , 〆 and pole 61 ' are further formed at the source region between the liquid and non-electrode regions of the liquid and the substrate 4G. The fine structure 42 corresponding to the second FIG. ^ As shown in "2D", the body layer 7 is above the source 60 and the drain 61. Further, a Φ-dielectric layer (10) is formed over the semiconductor layer 7A, and finally a gate is formed on the surface of the dielectric layer 80 between the 9201039392 60 and the drain 61. Please refer to "3A". Figure" to ^ ^. The figure shows a manufacturing process diagram of another embodiment of the invention. According to the present invention, as shown in FIG. 3A, the stencil substrate 40, wherein the substrate 40, includes a substrate holder 80. The gate 63 is located on the substrate 90 and is on the "electric layer 9". The electrical layer 80 is located on the idle electrode 63 and the substrate as shown in the "3rd drawing", after which the dielectric layer can be treated or treated with ultraviolet light ozone. The 80 surface causes the surface of the dielectric display layer 80 to form a lyophilic property. However, in other implementations of the present invention, the above steps may not be used or may be performed on the surface of the dielectric layer 80 - from the __ of the nucleus, or from the surface of the dielectric sound (10) - with the f solution f high Molecularly, the material 8q is metered so that the surface of the dielectric layer 80 is lyophilic. As shown in FIG. 3C and FIG. 3D, the surface treatment material 32 on the transfer mold 3 is transferred onto the surface of the dielectric layer 8 by imprinting so that the transfer pattern is in the dielectric layer. A channel region of a liquid repellency and a non-electrode region are formed on the surface of the dielectric layer 80, wherein the surface of the dielectric layer 80 is not embossed, and the region of the surface treatment material defines a source region 82 and a drain region 83 respectively. . As shown in Fig. 3E, the conductive ink cartridge is then ejected using the microfluidic disk generating device 5 in the source region magic and the non-polar region 83. Due to the difference in surface energy between the channel region of the liquid repellency shown in the first diagram and the non-electrode region and the dielectric layer 8G, the conductive ink 52 is self-aligned to the source region 82 and the drain region 83, and A source 6 〇 and a 61 61 are formed on the source region illusion and the jewel zone 83. 201039392 is shown in Fig. π circle, at the source 6 体 body layer 70. /, half of the conductive layer is formed above the secondary electrode. The electrical oxide material of the transistor according to the present invention can be a metal material or a conductive ink. Forming source 60 and immersing (four) guide
㈣蝴咖3。另外，半導體 體材料。 ；'、金屬减物㈣或有機半導 根據本發批—魏有微細結叙電子 及電::體的製造方法，係利用微接觸技術在咖 液或斥液圖樣，並且利用墨水與親液或斥液圖樣的親 4雜在錄表面形賴細結構，故除了可以製作細線寬 的的結構外逛具有可調變線距的功效。 另外’本發明之-實施難經_印以及噴墨的方式製作電 晶體，可降·極奴極之間騎道寬度，_可以提高電晶體 的操作電流及元件的反應時間。 sa 另外，本發明之-實施例在完成轉印模的製作後，於生產電 子兀件過程中就不需採用光罩的製程，可具有高效率生產效能， 並有效降低設備及製程的成本。 雖然本發明以剛述之實施例揭露如上，然其並翻以限定本 發明’任何熟習相賴藝者，在不脫離本發明之精朴範圍内， 11 201039392 當可作些許之更動與潤飾，因此本發明之專利保護範圍須視本說 明書所附之申請專利範圍所界定者為準。 【圖式簡單說明】 第1A至1H圖係為根據本發明一實施例的製造流程示意圖； 第2A至2C圖係為根據本發明另一實施例的製造流程示意圖；以 及 第3A至3F圖係為根據本發明再一實施例的製造流程示意圖。 【主要元件符號說明】 10 模板 11 圖樣 20 可撓性高分子層 30 轉印模 31 轉印模表面 32 表面處理材料 40、40， 基板 41 斥液圖樣 42 微細結構 43 源極區 44 >及極區 50 微流體產生裝置 51 墨水 52 導電性墨水 12 201039392 60 源極 61 没極 63 閘極 70 半導體層 80 介電層 82 源極區 83 >及極區 90 基材(4) Butterfly 3 In addition, the semiconductor body material. ; ', metal reduction (four) or organic semi-conductor according to this batch - Wei has a detailed description of the electronic and electrical: body manufacturing method, using micro-contact technology in the coffee liquid or repellency pattern, and using ink and lyophilic Or the pro-distribution pattern of the reptile pattern is on the surface of the recording surface, so that in addition to the structure of the thin line width, the effect of the adjustable line spacing can be seen. Further, the present invention can be used to fabricate a transistor, which can reduce the riding path width between the pole and the pole, and can increase the operating current of the transistor and the reaction time of the element. In addition, the embodiment of the present invention does not require the use of a mask process in the process of producing an electronic component after the production of the transfer mold, and has high efficiency production efficiency and effectively reduces the cost of equipment and processes. Although the present invention has been disclosed in the above-described embodiments, it is intended to limit the invention to any skilled person, and without departing from the scope of the invention, 11 201039392 may be modified and retouched. Therefore, the scope of patent protection of the present invention is defined by the scope of the claims appended hereto. BRIEF DESCRIPTION OF THE DRAWINGS FIGS. 1A to 1H are schematic views of a manufacturing process according to an embodiment of the present invention; FIGS. 2A to 2C are schematic views of a manufacturing process according to another embodiment of the present invention; and FIGS. 3A to 3F It is a schematic diagram of a manufacturing process according to still another embodiment of the present invention. [Main component symbol description] 10 template 11 pattern 20 flexible polymer layer 30 transfer mold 31 transfer mold surface 32 surface treatment material 40, 40, substrate 41 repellency pattern 42 fine structure 43 source region 44 > Polar Region 50 Microfluidic Generator 51 Ink 52 Conductive Ink 12 201039392 60 Source 61 Nopole 63 Gate 70 Semiconductor Layer 80 Dielectric Layer 82 Source Region 83 > Polar Region 90 Substrate
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