201037758 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種對半導體製程沉積腔體抽真空的方 法，特別是指以加熱吸氣材料產生蒸氣用以吸附氣體分子的 方法。 【先前技術】 在一般半導體或薄膜製程中，必須在一較高真空度的環 境下進行，通常先讓沉積腔體内的真空度達到一定程度(約 ΙΟ·5 torr以下)，才能繼續進行後續薄膜沉積製程。而利用真 空设備來達到此一需求為常見技術。現今之薄膜製程無論是 利用CVD(化學氣相沉積法)或利用PVD(物理氣相沉積法）皆 必須利用到真空設備。 將腔體内的真空度由一大氣壓(76〇 t〇rr)抽至高真空 (10_3〜10_5 torr)通常分為兩個階段來抽氣，首先，使用如：機 械幫浦(mechanical pump)、乾式幫浦(dly pump)或目前一般薇 商常用之低真空幫浦，先將真空度由一大氣壓抽至大約α2 torr，再利用如··冷凍幫浦(ciy〇 pump)或渦輪分子幫浦(加出〇 pump)等高真空幫浦繼續將真空度由〇 2 t〇fr抽至1〇_5 t〇jT以 下之高真空度。 將一基材放入一真空設備作沉積時，需要將腔體破真空 之後才能放入該基材，在打開腔體時，其内部會直接與大氣 接觸，大氣中的水氣進入到腔體之後容易吸附於腔壁，當抽 到0.2 torr以後’腔壁面吸附之氣體釋出，隨著壓力越往下降 會越嚴重，因此在1〇·3 torr以下，主要之氣體負荷來自腔體 201037758 内部之表面釋氣，故在一開始破真空時吸附於腔壁表面的水 氣及氧氣，是在抽至高真空時，使抽氣速率降低的原因之一。 較為高階的抽真空設備是額外加上一個緩衝腔(buffer chamber)以區隔主要的沉積腔體，將基材先置於缓衝腔中， 抽真空至某-預定值之後，再將基材傳送啦沉積腔體 中繼續抽至預定真空度之後再進行蒸鑛，主要沉積腔體並未 直接接觸大氣，抽至較高紅姆未舰_之沉積腔體而 5較為容易。 具緩驗(bUffe" ehambe狀沉積題❼t*，抽真 空過程費時，直接影響產品產 月匕 因此’如何節省抽真空時 【發明内容】 少將在不使用加Af物㈣)功率的情況下，減 n由-絲壓抽至高真空的時間。本發明提供 對半導體製程_沉積雜減^ :對，製程薄膜沉積腔體進行抽氣時 枓進订加熱，使其產生氣體分子，該 本大氣中的水氣及氧氣，‘二= 的達到郎省抽真空時間之目的。 體，二ί 步驟：提供—半導體製程薄膜沉積腔 直空幫_ 體連接—低真轉浦及一高 體製㈣驗積腔觀行抽氣，該半 晶圓承载盤以承載· 有叮㈣田板(shutter)’至少—承載吸氣材料之掛 201037758 禍，一加熱器；接著’以該低真空顧對該半導體製程薄膜 沉積腔體進行第—階段減，刻達成―第—預定目= 空f，該高真空幫浦進行第二階段抽氣至達成—第二 預ΐ:標真空度’此時’該可調節檔板擋住該晶圓；繼續： 該局真线浦進行第三階段抽氣，_，以該加熱器對該吸 氣材料加熱產錢體捉辭導體製程賴沉積腔體 内的殘餘氣體’直至達成目標真空度；義對該吸氣材料加 Ο201037758 VI. Description of the Invention: [Technical Field] The present invention relates to a method for evacuating a semiconductor process deposition chamber, and more particularly to a method for generating vapor by heating a getter material for adsorbing gas molecules. [Prior Art] In a general semiconductor or thin film process, it must be carried out in a high vacuum environment. Usually, the vacuum in the deposition chamber is first reached (about ΙΟ·5 torr or less) to continue. Thin film deposition process. It is a common technique to use vacuum equipment to achieve this demand. Today's thin film processes must utilize vacuum equipment, whether by CVD (chemical vapor deposition) or by PVD (physical vapor deposition). Pumping the vacuum in the chamber from one atmosphere (76〇t〇rr) to high vacuum (10_3~10_5 torr) is usually divided into two stages to pump air. First, use: mechanical pump, dry The dly pump or the low-vacuum pump commonly used by the current Wei merchants first draws the vacuum from atmospheric pressure to about α 2 torr, and then uses the ciy〇pump or the turbo molecular pump ( Adding a 〇ump) contour vacuum pump continues to draw the vacuum from 〇2 t〇fr to a high vacuum below 1〇_5 t〇jT. When a substrate is placed in a vacuum device for deposition, the cavity needs to be vacuumed before being placed in the substrate. When the cavity is opened, the interior thereof is directly in contact with the atmosphere, and moisture in the atmosphere enters the cavity. After that, it is easy to adsorb to the cavity wall. When 0.2 torr is drawn, the gas adsorbed by the cavity wall will be released, and the pressure will decrease as the pressure drops. Therefore, below 1〇·3 torr, the main gas load comes from the cavity 201037758. The surface of the gas is released, so the moisture and oxygen adsorbed on the surface of the cavity wall at the beginning of the vacuum are one of the reasons for lowering the pumping rate when pumping to a high vacuum. The higher-order vacuuming device is additionally provided with a buffer chamber to separate the main deposition chamber, and the substrate is first placed in the buffer chamber, and the substrate is vacuumed to a predetermined value, and then the substrate is placed. After the transfer of the deposition chamber continues to pump to a predetermined degree of vacuum before the steaming, the main deposition chamber is not directly in contact with the atmosphere, pumping to the deposition chamber of the higher red hamper is easier. With a slow test (bUffe" ehambe-like deposition problem ❼t*, the vacuuming process takes time, directly affecting the product production month, so 'how to save the vacuum when the vacuum is used.> The general will not use the Af (4) power, minus n The time during which the wire is drawn to a high vacuum. The invention provides a semiconductor process _ deposition impurity reduction ^: Yes, when the process film deposition cavity is pumped, the enthalpy is heated to generate gas molecules, the moisture and oxygen in the atmosphere, 'two = The purpose of the provincial vacuum time. Body, two steps: provide - semiconductor process thin film deposition chamber straight air _ body connection - low true transfer and a high system (four) inspection cavity observation pumping, the semi-wafer carrier tray to carry · 叮 (4) The plate (shutter) 'at least - carrying the suction material of the 201037758 disaster, a heater; then 'the low-vacuum of the semiconductor process film deposition cavity to the first stage reduction, engraved - the first - the target = empty f, the high vacuum pump performs the second stage of pumping to reach - the second pre-tap: the standard vacuum 'this time' the adjustable baffle blocks the wafer; continues: the bureau real-line pump performs the third stage pumping Gas, _, heating the getter material with the heater to capture the residual gas in the deposition chamber by the conductor process until the target vacuum is achieved;
熱之加熱H及打職可鑛縣，以進行晶圓之半導體 製程沉積。 利用本發明可大巾肖減少抽真空之時間，以本發明之 =而言’腔體，柱型，該腔體之大小為高度9⑻麵，直徑 即谷牙ί約為4xl0W為例。原本將真空度由— 月= *就需要花大约36分鐘，而^= 明之方法後’將真空度由1()-5 _抽至3χ1().6 t。 即將容積約為4X108腿2 &一大氣_至3>^1 :、僅而化30分鐘’節省了約半小時的時間，在相 内，可增加半導體製程之產能。 1 【實施方式】 有關本發明之麵及其他技_容、義與功效，在以 下配合參考圖式之紐實關麟細說财，將可清楚的呈 現。 、本發明提供-輯伟體餘薄航餘難真空的方 法，可節省對腔體抽真空的時間。圖i所示為本發明之一實 施例應用，首先提供—半導體餘_沉積腔體10，在腔體 10内具有一承載台1〇〇，用以承載複數個坩堝 201037758 .(cmcible)lOl〜103，其中一掛禍(crucibie)i〇2内放置一吸氣材 料1020，此吸氣材料在本發明實施例中為一鈦塊，吸氣材料 1020在抽氣過程中被-加熱器1〇4加熱產生蒸氣，以捕捉腔 體内殘餘氣體分子，而加熱器1〇4可以為一電子搶，或是燈 絲及加熱板，本發明實施例中該加熱器係為一電子搶。其他 坩堝1(H、103(crucible)則承載除了吸氣材料1〇2〇以外之複 數個目的金屬塊1010、1030，做為_金屬層來源。 半導體製程薄膜沉積腔體1〇内更包括一晶圓承載盤 1〇5，晶圓承載盤1〇5可放置複數片晶圓1〇6，並有一可調節❹ 檔板(shutter) 107 〇 71 7y .............π干等體裂程薄膜沉積腔體 ίο ’中間亚有-第-控糊13用啸制低真空幫浦13與半 導體製程_沉積腔體Η)間賴之連通，域轉浦可 將真空度由-大氣麗(約76〇切订)抽至約1〇-2〜1〇-3咖，此低 ，空幫浦J可以為機械幫浦(meehanieal pump)或乾式幫浦 ❹ (_卿祕中之-種。另有—高真空幫浦12連接於 體製程_沉積腔體10，並以—第二控_ 14 真_ 幫㈣與腔體H)間氣體之連通，高真空幫浦。可將真^ =°w10 _抽至約1G6〜1’高真空幫浦12可為 令床黧浦(ciyopump)。 本發明實_巾之製料餘續 半導體製程薄膜沉積腔體10破真空 於該晶圓承載盤⑽之後，再進行以下步驟，包2放置 將罘一控制閥13打開，第二控制閥 幫浦η對半導體製程薄膜沉積腔體ω ^ 使低真工 貝工體10進仃第—階段抽氣， 201037758 直至2將該半導體製程薄膜沉積腔體1〇内之塵力粗抽至約^ 〜10 toir左右。 接著’將第-控制間13關上，第二控制間14打開，使高 :、空幫浦12料導難程薄廳積顯崎行第二階段抽 乳’直至將半導體製程薄膜沉積腔體1G内之動抽至％ 1〇〜lxlO·5 torr左右，此時，可調節檔板1〇7，擋健晶圓承 載盤105、，以防在加熱吸氣材料1〇2〇時產生的蒸氣對該晶圓 1〇6造成料’·猶以高真空幫肋對半導體_薄膜沉積腔 體10進行第一阳段抽氣，同時，以加熱器刚對掛禍102内的 吸氣材料1020進行加熱而使吸氣材料麵產生蒸氣，由於吸 氣材料之統可靖由職獅之水氣，及半導體製程薄膜 /儿積腔體10喊餘之水氣及氧氣，進而達到節省抽真空時間 的目的。 八 最後，當真空度抽至9xl(T6〜lxi〇_7 torr之後，將加熱器 104關閉，將打開可調郎槽板ίο?·，可進行晶圓之半導體製程 沉積，冷卻之後即可破真空將晶圓拿出。 對於分批次鏡膜製程而言，在每次製程完成之後，即需 要對沉積腔體破真空之後才能換置下一批晶圓進行相同製 程，因此，需要重複破真空再抽真空’相當費時。本案之發 明可有效的減少抽真空時間。以本發明之最佳實施例為例， 在本實施例中腔體容積大小約為4xi〇8 mm2。原本將真空度 由一大氣壓抽至3xl〇-6torr需要花費大約60分鐘，其中將真 空度由l〇-5torr抽至3xUT6torr就需要花大約36分鐘，而在 本發明之製程中，在真空度到達ΚΓ5 torr開始加熱鈦塊，發 現將真空度由1 〇_5 torr抽至3 X1 (T6 torr僅需花6分鐘，亦即將 201037758 奋積約為4xl〇8 mm2由—大氣壓抽至3χ1〇-6 t〇jT總共僅需花 30分鐘」可節省半小時的朗。而在腔體巾加触氣材料使 其產生祕細捉氣體分子，以制加速抽真③之目的，亦 可適用於具有緩衝腔(buffer chamber)之沉積腔體。 士總結以上所述，本發明可減少抽真空時間，降低製程所 費時間’增加產品之產能。且方法簡便，不需在製程設備上 做改變或_設備。目—_之絨_賴原本就具 有複數個職’僅需將其巾—卿放人吸紐料。其中加熱 吸氣材料產生統|柯糊縣設備财之加熱器。 、以上圖示及說明，僅為本發明之較佳實施例，其並非用 以限制本發明之實施範圍，任何熟習該項技藝者依據本發明 之精神所做之些郷改’仍應屬本發明之精神及範圍。 【圖式簡單說明】 圖一顯示本發明所提供之對半導體製程薄膜沉積腔體抽直 空的設備 ' 【主要元件符號說明】 承載台100 吸氣材料1020 目的金屬塊1010、1030 晶圓106 低真空幫浦11 第一控制閥13 半導體製程薄膜沉積腔體10 坩堝 101-103 加熱器104 晶圓承載盤105 可調節擋板107 高真空幫浦12 第二控制閥14Heat heating H and working in Kelly County for wafer semiconductor deposition. With the present invention, the time for vacuuming can be reduced, in the case of the present invention, the cavity, the column type, the size of the cavity is a height of 9 (8) faces, and the diameter of the cavity is about 4 x 10 W. Originally, the degree of vacuum was taken from -month = *, which took about 36 minutes, and ^^ after the method, the vacuum was drawn from 1 () - 5 _ to 3 χ 1 (). 6 t. That is, the volume is about 4X108 legs 2 & one atmosphere _ to 3 > ^1 :, only 30 minutes, saving about half an hour, in the phase, can increase the capacity of the semiconductor process. [Embodiment] The aspects of the present invention and other techniques, abilities, meanings, and effects will be clearly demonstrated in the following with reference to the map. The invention provides a method for collecting the vacuum of the spare body and saving the vacuum, and the time for vacuuming the cavity can be saved. Figure i shows an application of an embodiment of the present invention. First, a semiconductor residual deposition chamber 10 is provided. The cavity 10 has a carrier 1 〇〇 for carrying a plurality of 坩埚201037758. (cmcible) lOl~ 103. A getter material 1020 is placed in a crucibie i〇2. The getter material is a titanium block in the embodiment of the present invention, and the getter material 1020 is heated by the heater 1 4 heating generates steam to capture residual gas molecules in the cavity, and the heater 1〇4 can be an electron grab, or a filament and a heating plate. In the embodiment of the invention, the heater is an electronic grab. Other 坩埚1 (H, 103 (crucible) carries a plurality of target metal blocks 1010, 1030 other than the getter material 1 〇 2 ,, as the source of the _ metal layer. The semiconductor process film deposition chamber 1 更 further includes a The wafer carrier tray 1〇5, the wafer carrier tray 1〇5 can hold a plurality of wafers 1〇6, and has an adjustable shutter 107 〇71 7y ........... .. π dry isotropic crack film deposition chamber ίο 'intermediate sub----- control paste 13 with whistling low vacuum pump 13 and semiconductor process _ deposition cavity Η) connection, domain transfer can be The degree of vacuum is drawn from - Atmosphere (about 76 〇 cut) to about 1 〇 2~1 〇 -3 coffee, this low, empty pump J can be a mechanical pump (meehanieal pump) or dry gang ❹ (_ In the secret of the secret - the other - the high vacuum pump 12 is connected to the institutional process _ deposition cavity 10, and the second control _ 14 true _ help (four) and the cavity H) between the gas, high vacuum Pu. The true ^ = °w10 _ can be pumped to about 1G6~1'. The high vacuum pump 12 can be used to make the bed ciyopump. After the semiconductor semiconductor process film deposition chamber 10 of the present invention is vacuumed on the wafer carrier disk (10), the following steps are performed, and the package 2 is placed to open the first control valve 13, and the second control valve is pumped. η pairs of semiconductor process film deposition chamber ω ^ to make the low-powered work-body 10 into the first-stage pumping, 201037758 until 2 the semiconductor process film deposition chamber 1 之 dust force is roughly pumped to about ^ ~ 10 Toir around. Then, 'the first control room 13 is closed, the second control room 14 is opened, so that the high:, the empty pump 12 material guides the thin chamber to accumulate the second stage of breast pumping' until the semiconductor process thin film deposition chamber 1G The internal motion is pumped to about 1〇~lxlO·5 torr. At this time, the baffle 1〇7 can be adjusted to block the wafer carrier disk 105 to prevent vapor generated when the getter material is heated 1〇2〇. The wafer 1 〇 6 is caused to be a material. The high vacuum rib is used to perform the first positive pumping of the semiconductor _ thin film deposition chamber 10, and at the same time, the heater just has the getter material 1020 in the catastrophe 102. Heating to make the surface of the getter material generate steam, because the getter material can be used by the lion's water vapor, and the semiconductor process film/child cavity 10 shouts the water and oxygen, thereby saving the vacuum time. purpose. Finally, when the vacuum is drawn to 9xl (T6~lxi〇_7 torr, the heater 104 is turned off, the adjustable Lang board plate will be opened, and the semiconductor process deposition of the wafer can be performed, and the semiconductor process can be broken after cooling. Vacuum takes the wafer out. For the batch mirror process, after each process is completed, the deposition process cavity needs to be vacuumed before the next batch of wafers can be replaced for the same process. Therefore, it needs to be repeatedly broken. Vacuum vacuuming is quite time consuming. The invention of the present invention can effectively reduce the vacuuming time. Taking the preferred embodiment of the present invention as an example, the volume of the cavity in this embodiment is about 4 xi 〇 8 mm 2 . It takes about 60 minutes to pump 3xl〇-6torr from one atmosphere, and it takes about 36 minutes to pump the vacuum from l〇-5torr to 3xUT6torr. In the process of the present invention, the heating starts when the vacuum reaches ΚΓ5 torr. Titanium block, found that the vacuum is drawn from 1 〇 _5 torr to 3 X1 (T6 torr only takes 6 minutes, also about 201037758. The cumulative product is about 4xl 〇 8 mm2 by - atmospheric pressure pumping to 3 χ 1 〇 -6 t 〇 jT total It only takes 30 minutes to save Hours of lang. While the cavity towel is filled with a gas-absorbing material to produce a secret gas-capturing gas molecule for the purpose of accelerating the pumping of the true metal 3, it can also be applied to a deposition chamber having a buffer chamber. According to the invention, the vacuuming time can be reduced, the time required for the process can be reduced, and the production capacity of the product can be increased. The method is simple, and no change or equipment is needed on the process equipment. The _ _ _ _ _ _ original has a plurality of It is only necessary to put the towel-qing into the suction material. Among them, the heating and suction material is generated by the heater of the Kezi County equipment. The above illustration and description are only preferred embodiments of the present invention. It is not intended to limit the scope of the present invention, and any modifications made by those skilled in the art in light of the spirit of the present invention should still fall within the spirit and scope of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 shows the present invention. Providing a device for straightening the semiconductor process thin film deposition chamber' [Main component symbol description] Carrier 100 Suction material 1020 Purpose metal block 1010, 1030 Wafer 106 Low vacuum pump 11 First control valve 13 Semiconductor The thin film deposition process chamber 10 of the crucible wafer susceptor heater 104 101-103 105 107 an adjustable baffle high vacuum pump 12 of the second control valve 14