201037064 ——· ioc/π 六、發明說明： 【發明所屬之技術領域】 本發明是有關於一種拋光組成物及使用此拋光組成物 之拋光方法，且特別是有關於拋光藍寶石之組成物及使用 此組成物之藍寶石的拋光方法。 【先前技術】 發光二極體（Light-Emitting Diode，LED)具有省電、 壽命長、耐震及低發熱等多項優點，超高亮度之白/藍光 〇 LED ’在未來將可取代現行之白熱燈泡與_素燈泡。超高 亮度白/藍光LED的品質’取決於氮化鎵(GaN)的磊晶品 質’而氮化鎵的磊晶品質’則與所使用的藍寶石基板表面 加工的品質息息相關。 藍寶石相硬度高且熔點高，是一種相當難加工的脆性 陶瓷材料。由於藍寶石（單晶三氧化二鋁）的晶體結構與氮 化鎵相同，是製造白光/藍LED的關鍵材料之一。唯有平 整的藍寶石晶圓加工表面，才能生長出品質極佳的高亮度 〇 的 LED。 藍寶石具有極高之化學惰性（chemical inertness)，使 用強酸或強社化學抛統，難轉其起有效之拋光效 果。而使用高溫之強酸組合物，雖能有效地腐減寶石， ，具有高度的危險性，不適合於—般之加卫環境，且仍不 能達到表面平坦度與粗糙度的要求。 藍寶石之莫氏硬度高達9度，利用極高硬度的磨粒來 進行研磨拋光，亦無法有效達成較高之磨除速率。而且， 201037064 η 純粹機械作用的研磨拋光，晶圓表面會產生機械性的刮 傷’表面品質無法符合磊晶製程的要求。 習知的藍寶石拋光製程是由⑴硬拋光、（2)細拋光以及 (3)精拋光等三道製程所構成。其中硬拋光製程是在金屬盤 面上利用高硬度的磨粒如鑽石以研磨藍寶石晶圓，但是由 於此製程所使用的磨粒硬度高，容易造成晶圓表面刮痕、 粗链度差且4貝傷層深專問題。細抛光製程是在軟塾材質上 進行研磨，其目的是用來移除晶圓上的大部分刮傷、損傷 層，並改善表面粗糙度，然而，由於細拋光製程的移除速 率慢，因此需要耗費較多的處理時間。精拋光製程是在軟 墊材質上進行研磨，其目的則是在完全移除晶圓表面的缺 陷0 ,然而，習知的拋光製程在由硬拋光製程移行至細拋光 製程時必須轉換拋光機台，並且在此兩個拋光 時間並不-致，再加上細抛光製程需要較長的處理時間先 因此整體而s，目前的拋光製程較為繁雜且耗時。 【發明内容】 本發明提供-種拋光藍寶石的組成物及方法，其可簡 化拋光製程並縮短拋光時間，有助於節省成本以及提昇產 率〇 本發明提出-種用於拋光藍寶石之組成物，包括：ι〇 =量百分比的奈米級磨粒；5至4〇重量百分比的微 =拉，10至1000ppm的界面活性劑；1〇至麵鹏 的/刀散劑；5至50重量百分比的吸熱劑；阳調整劑；以 201037064 ------ oc/n 及其餘為水，以組成物之總重量為基準。 本發明又提出一種藍寶石的拋光方法，此方法包括提 供一組成物。此組成物包括：10至6〇重量百分比的奈米 級磨粒，5至40重量百分比的微米級磨粒；1〇至1〇〇〇ppm 的界面活性劑；1〇至l〇〇〇ppm的分散劑；5至5〇重量百 分比的吸熱劑；pH調整劑；以及其餘為水。之後，以組成 物對藍寶石進行拋光。 依照本發明實施例所述，上述之藍寶石的拋光方法 中，藍寶石的轉速為120至200 rpm。 依照本發明實施例所述’上述之藍寶石的拋光方法 中’組成物的流量為30〜50毫升/分鐘。 依照本發明實施例所述’上述之用於拋光藍寶石之組 成物以及藍寶石的拋光方法中’奈米級磨粒之材質包括金 屬氧化物。 依照本發明實施例所述，上述之用於拋光藍寶石之組 成物以及藍寶石的拋光方法中’金屬氧化物包括二氧化 〇 矽、二氧化鈽、二氧化鈦、二氧化鍅、二氧化鋅、二氧化 錳、三氧化二鋁或三氧化二鐵。 依照本發明實施例所述，上述之用於拋光藍寶石之組 成物以及藍賃石的抛光方法中’奈米級磨粒為梦溶膠 (colloidal silica)。 依照本發明實施例所述’上述之用於拋光藍寶石之組 成物以及藍寶石的拋光方法中’奈米級磨粒之一次粒徑範 圍為 10 nm 至 250 nm。 201037064 依照本發明實施例所述’上述之用於拋光藍寶石之組 成物以及藍寶石的拋光方法中，奈米級磨粒之一次粒徑範 圍為 60 nm 至 120 nm。 依照本發明實施例所述，上述之用於拋光藍寶石之組 成物以及藍寶石的拋光方法中，微米級磨粒之材質包括金 屬氧化物、碳化物或氮化物。 ” 依照本發明實施例所述，上述之用於拋光藍寶石之組 成物以及藍寶石的拋光方法中，金屬氧化物包括二氧化 矽、二氧化鈽、二氧化鈦、二氧化鍅、二氧化鋅、二氧化 錳、三^化二鋁、三氧化二鐵；前述碳化物包括鑽石、碳 ，石夕、碳化侧、碳化鎢、碳化鈦、碳化結或碳化鈒；前述 鼠化物包括氮化砍、氮㈣、氮化碳、氮化鈦或氣化錯。 依照本發明實施例所述，上述之祕拋光藍寶石之电 成物以及藍寶石的拋光方法中，微米級餘包括化_ 鋁、鑽石、碳化矽或氮化硼。 乳 依照本發明實施例所述，上述之用於拋光㈣石之組 成物以及藍寶石的減方法巾，微米級練的莫氏硬度大 於一氧化石夕的莫氏硬度。 依照本發明實施騎述，上述之麟拋絲寶石之組 以及藍寶石的拋光方法巾’微米級練的莫氏硬度大 依照本發明實施例所述， 成物以及藍寶石的拋光方法中 於9。 上述之用於拋光藍寶石之組 ’微米級磨粒的莫氏硬度大 201037064—c/n 明實施例所述，上述之用於拋光 成物二藍寶石的抛光方法中，微米級 (equiaxed)粒子。 卞罕由 依照本發明實施例所述，上述之用於拋光藍寶石 成物以及藍寶石的拋光方法中，微米級磨㈣形狀為次粒 狀或次圓狀。 依照本發明實施例所述，上述之用於拋光藍f石之組201037064 ——· ioc/π VI. Description of the Invention: [Technical Field] The present invention relates to a polishing composition and a polishing method using the same, and in particular to a composition and use of polished sapphire A polishing method for sapphire of this composition. [Prior Art] Light-Emitting Diode (LED) has many advantages such as power saving, long life, shock resistance and low heat. Ultra-high brightness white/blue LED ' LED will replace the current white heat bulb in the future. With _ plain bulbs. The quality of ultra-high brightness white/blue LEDs depends on the epitaxial quality of gallium nitride (GaN) and the epitaxial quality of gallium nitride is closely related to the quality of the surface of the sapphire substrate used. The sapphire phase has a high hardness and a high melting point and is a brittle ceramic material that is quite difficult to process. Since sapphire (single crystal aluminum oxide) has the same crystal structure as gallium nitride, it is one of the key materials for the manufacture of white/blue LEDs. Only a smooth sapphire wafer processing surface can produce high-brightness 〇 LEDs of excellent quality. Sapphire has a very high chemical inertness, and it is difficult to turn it into an effective polishing effect by using strong acid or strong chemical. The use of a high-temperature strong acid composition, although effective in reducing gems, is highly dangerous, is not suitable for the general environment, and still can not meet the requirements of surface flatness and roughness. The sapphire has a Mohs hardness of up to 9 degrees and is polished and polished with extremely high hardness abrasive grains, and it is not effective to achieve a higher grinding rate. Moreover, 201037064 η purely mechanical polishing and polishing, the surface of the wafer will be mechanically scratched. The surface quality cannot meet the requirements of the epitaxial process. The conventional sapphire polishing process consists of three processes: (1) hard polishing, (2) fine polishing, and (3) fine polishing. The hard polishing process uses high-hardness abrasive grains such as diamonds to grind sapphire wafers on the metal disk surface. However, due to the high hardness of the abrasive grains used in this process, it is easy to cause scratches on the surface of the wafer, and the thickness of the wafer is poor. Deep injury problem. The fine polishing process is performed on a soft enamel material to remove most of the scratched, damaged layers on the wafer and improve surface roughness. However, due to the slow removal rate of the fine polishing process, It takes a lot of processing time. The finish polishing process is performed on a padded material for the purpose of completely removing the defect on the wafer surface. However, the conventional polishing process must be converted to a polishing machine when moving from a hard polishing process to a fine polishing process. And the polishing time is not the same, and the fine polishing process requires a long processing time. Therefore, the overall polishing process is complicated and time consuming. SUMMARY OF THE INVENTION The present invention provides a composition and method for polishing sapphire, which can simplify the polishing process and shorten the polishing time, and contribute to cost saving and productivity improvement. The present invention proposes a composition for polishing sapphire. Including: ι〇=quantity percentage of nano-sized abrasive particles; 5 to 4% by weight of micro-pulling, 10 to 1000 ppm of surfactant; 1〇 to Fen Peng/knife powder; 5 to 50% by weight of endothermic Agent; positive regulator; with 201037064 ------ oc / n and the remainder as water, based on the total weight of the composition. The invention further provides a method of polishing sapphire comprising providing a composition. The composition comprises: 10 to 6 weight percent of nano-sized abrasive particles, 5 to 40 weight percent of micron-sized abrasive particles; 1 to 1 ppm of surfactant; 1 to 1 ppm Dispersing agent; 5 to 5 〇 by weight of heat absorbing agent; pH adjusting agent; and the rest being water. Thereafter, the sapphire is polished with the composition. According to an embodiment of the present invention, in the above sapphire polishing method, the sapphire has a rotational speed of 120 to 200 rpm. The flow rate of the composition in the above-described sapphire polishing method according to the embodiment of the present invention is 30 to 50 ml/min. The material of the 'nano-grade abrasive grain' in the polishing composition for polishing sapphire and the sapphire polishing method according to the embodiment of the present invention includes a metal oxide. According to an embodiment of the present invention, in the polishing method for polishing sapphire composition and sapphire, the metal oxide includes cerium oxide, cerium oxide, titanium dioxide, cerium oxide, zinc dioxide, manganese dioxide. , aluminum oxide or ferric oxide. According to an embodiment of the present invention, the above-mentioned polishing method for polishing a sapphire and a method for polishing a smectite is a 'nano-grade abrasive grain as a colloidal silica. According to the embodiment of the present invention, the above-mentioned composition for polishing sapphire and the polishing method of sapphire have a primary particle size ranging from 10 nm to 250 nm. 201037064 In the above polishing method for polishing a composition of sapphire and sapphire according to an embodiment of the present invention, the primary grain size of the nano-sized abrasive grains ranges from 60 nm to 120 nm. According to an embodiment of the present invention, in the above polishing method for polishing sapphire and sapphire, the material of the micron-sized abrasive grains includes a metal oxide, a carbide or a nitride. According to the embodiment of the present invention, in the polishing method for polishing a composition of sapphire and sapphire, the metal oxide includes ceria, ceria, titania, ceria, zinc dioxide, manganese dioxide. , the tri-aluminum, the ferric oxide; the foregoing carbides include diamond, carbon, Shi Xi, carbonized side, tungsten carbide, titanium carbide, carbonized knot or tantalum carbide; the aforementioned ratification includes nitriding, nitrogen (tetra), nitrogen Carbon, titanium nitride or gasification error. According to the embodiment of the present invention, in the above-mentioned secret polishing sapphire electroforming and sapphire polishing method, the micron-level includes _ aluminum, diamond, tantalum carbide or nitriding Boron. According to the embodiment of the present invention, the above-mentioned method for polishing the composition of the stone and the method for reducing the sapphire, the Mohs hardness of the micron-scale training is greater than the Mohs hardness of the oxidized stone. As described above, the group of the ribbed gemstones and the polishing method of the sapphire have a large Mohs hardness of the micron-scale training according to the embodiment of the present invention, and the method for polishing the sapphire and the sapphire 9. The Mohs hardness of the above-mentioned group of micro-sized abrasive grains for polishing sapphire is large, 201037064-c/n, as described in the above embodiments, the above-mentioned polishing method for polishing the finished two sapphire, the micro-scale (equiaxed) Particles. In the above polishing method for polishing sapphire products and sapphire, the micron-scale grinding (four) shape is sub-granular or sub-circular in accordance with an embodiment of the present invention. , the above-mentioned group for polishing blue f stone
成物以及藍寶石的拋光方法巾，微米級磨粒之—次粒徑範 圍為 0.5 μπι 至 50 μιη。 二 依照本發明實施例所述，上述之用於拋光藍寶石之組 成物以及藍寶石的拋光方法中，微米級磨粒之一次粒徑範 圍為1 μιη至6 μιη。 依照本發明實施例所述，上述之用於拋光藍寶石之組 成物以及藍寶石的拋光方法中，界面活性劑包括非離子型 界面活性劑。 依照本發明實施例所述’上述之用於拋光藍寶石之組 成物以及藍寶石的拋光方法中，非離子型界面活性劑包括 烧芳基聚謎醇(alkylary 1 poly ether alcohol)、胺聚乙二醇聚 縮合物（amine polyglycol condensate)、聚乙氧加成物 (polyertioxy adduct)、改質之聚乙氧化醇類（modified polyethoxylated alcohol)或是改質的乙氧基化合物 (modified ethoxylate) ° 依照本發明實施例所述，上述之用於拋光藍寶石之組 成物以及藍寶石的拋光方法中’吸熱劑包括乙二醇 201037064 (ethylene glycol)l、甲醇(methanol)、聚乙二醇(polyethylene glycol)、丙二醇(propylene glycol)。 依照本發明貫施例所述，上述之用於抛光藍寶石之組 成物以及藍寶石的拋光方法中，分散劑包括三乙醇胺 (triethanolamine)、丙稀酸聚合物（acryijc p〇iymer)或其鹽 類、乙醇乙氧基化物(alcohol ethoxylate，AE)、或是其混合物。 依照本發明貫施例所述，上述之用於拋光藍寳石之經 成物以及藍寶石的拋光方法中，pH調整劑包括胺化合物、 鹼金族金屬之氫氧化物或氨水。 依照本發明實施例所述，上述之用於拋光藍寶石之組 成物以及藍寶石的拋光方法中，pH調整劑使前述組成物達 到 pH=9 至 12。 本發明之拋光藍寶石的組成物及方法，其可以將以往 的硬拋光製程與細拋光製程簡化為一道細拋光製程，因 能夠使製程簡化並節省成本。 本發明之拋光藍寶石的組成物及方法，與以往的硬 光製程與細拋光製程相較之下可以縮短拋光時二 夠提高產能。 U此用匕 ▲為讓本發日狀上述和其他目的、特徵和優點能更 易懂，下文特舉較佳實施例，並配合所附圖式，: 明如下。 π咔、.、田說 【實施方式】 本發明提出一種用於拋光藍寶石之組成物，1 米級磨粒、微米級餘、界面活性劑、分散劑、吸熱劑= 201037064The polishing method of the product and the sapphire, the micron-sized abrasive grains have a sub-particle size ranging from 0.5 μm to 50 μm. According to the embodiment of the present invention, in the above polishing method for polishing sapphire and sapphire, the primary particle size of the micron-sized abrasive grains ranges from 1 μm to 6 μm. According to an embodiment of the present invention, in the above polishing method for polishing sapphire and sapphire, the surfactant includes a nonionic surfactant. In the above polishing method for polishing a composition of sapphire and sapphire according to an embodiment of the present invention, the nonionic surfactant includes an alkylary 1 poly ether alcohol and an amine polyethylene glycol. An amine polyglycol condensate, a polyertioxy adduct, a modified polyethoxylated alcohol, or a modified ethoxylate ° according to the present invention In the above-mentioned polishing method for polishing the composition of sapphire and sapphire, the endothermic agent includes ethylene glycol 201037064 (ethylene glycol) 1, methanol, polyethylene glycol, propylene glycol ( Propylene glycol). According to the embodiment of the present invention, in the above polishing method for polishing a composition of sapphire and sapphire, the dispersing agent comprises triethanolamine, acrylic acid polymer (acryijc p〇iymer) or a salt thereof, Alcohol ethoxylate (AE), or a mixture thereof. According to the above-described embodiment for polishing a sapphire and a polishing method for sapphire, the pH adjusting agent comprises an amine compound, an alkali metal hydroxide or ammonia. According to the embodiment of the present invention, in the above polishing method for polishing sapphire and sapphire, the pH adjusting agent brings the composition to pH = 9 to 12. The composition and method of the polished sapphire of the present invention can simplify the conventional hard polishing process and the fine polishing process into a fine polishing process, which simplifies the process and saves costs. The composition and method of the polished sapphire of the present invention can shorten the polishing time and increase the productivity as compared with the conventional hard-light process and the fine polishing process. The above-mentioned and other objects, features and advantages will be more apparent from the following description. π咔,.,田说 [Embodiment] The present invention provides a composition for polishing sapphire, 1 meter abrasive grain, micron residue, surfactant, dispersant, heat absorption agent = 201037064
Joc/ιϊ 及pH調整劑。更具體地說，本發明之用於拋光藍寶石的 組成物包括：10至60重量百分比的奈米級磨粒；5至4〇 重量百分比的微米級磨粒Π0至1000 ρριη的界面活性劑； 10至1000 ppm的分散劑；5至50重量百分比的吸熱劑； pH調整劑，其餘為水。在說明書中，所述的重量百分比是 以組成物之重量為基準來計算的。 奈米級磨粒的作用是藉由機械力激發其與藍寶石表面 ❹的化學作用，以反應形成質地較軟的鋁化合物反應層。在 一實施例中，奈米級磨粒之—次粒徑範圍為丨〇奈米(nm) 至200 nm。在另一實施例中，奈米級磨粒之一次粒徑範圍 為60 nm至120 nm。當奈米級磨粒之一次粒徑太大時(例 如:大於200nm)，所拋光的藍寶石表面之品質不佳。當奈 米級磨粒之一次粒控小於l〇nm時，拋光的速度將會過低。 在一實施例中，奈米級磨粒之含量範圍為1〇至6〇重 量百分比(wt%)。當奈米級磨粒之含量範圍低於1〇時，移 除效果不佳，甚至無移除效果。當奈米級磨粒之含量範圍 © 高於60重量百分比時，對移除速率之提昇無助益，且成本 高。奈米級磨粒之材質包括金屬氧化物。金屬氧化物包括 二氧化矽、二氧化鈽、二氧化鈦、二氧化锆、二氧化鋅、 一氧化猛、二氧化二鋁或三氧化二鐵。在一實施例中，奈 米級磨粒為矽溶膠。 $ 微米級磨粒的作用是藉由硬度與尺寸較大的磨粒，有 效率的將所形成的質地較為鬆軟的反應層移除。在一實施 例中，微米級磨粒之一次粒徑範圍為0.5微米仏111)至5〇 201037064 中，微米級磨粒之一次粒經範圍為_ μ:。虽微米級磨粒之一次粒徑太大時(例如.大於5〇 μιη)、在晶圓表面產生刮痕。#微米級贿之—次 小於0.5 μιη時，則反應層的移除率會較低。Joc/ιϊ and pH adjuster. More specifically, the composition for polishing sapphire of the present invention comprises: 10 to 60% by weight of nano-sized abrasive grains; 5 to 4% by weight of micron-sized abrasive particles Π 0 to 1000 ρρηη of a surfactant; Dispersant to 1000 ppm; 5 to 50 weight percent of heat absorption agent; pH adjuster, the balance being water. In the specification, the weight percentages are calculated based on the weight of the composition. The role of the nano-sized abrasive particles is to provoke a chemical reaction with the surface of the sapphire by mechanical force to react to form a softer aluminum compound reaction layer. In one embodiment, the nano-sized abrasive particles have a sub-particle size ranging from nanometers (nm) to 200 nm. In another embodiment, the nano-sized abrasive particles have a primary particle size ranging from 60 nm to 120 nm. When the primary particle size of the nano-sized abrasive grains is too large (for example, greater than 200 nm), the quality of the polished sapphire surface is not good. When the grain size of the nano-grain is less than l〇nm, the polishing speed will be too low. In one embodiment, the nanoscale abrasive particles are present in an amount ranging from 1 Torr to 6 Torr by weight percent (wt%). When the content of the nano-grain is less than 1 ,, the removal effect is not good, and there is no removal effect. When the content of the nano-grain is in the range of more than 60% by weight, the removal rate is not helpful and the cost is high. The material of the nano-grain is composed of a metal oxide. Metal oxides include cerium oxide, cerium oxide, titanium dioxide, zirconium dioxide, zinc dioxide, oxidized manganese oxide, aluminum oxide or ferric oxide. In one embodiment, the nanoscale abrasive particles are cerium sols. The function of the micron-sized abrasive particles is to efficiently remove the softer reaction layer formed by the hardness and larger size of the abrasive particles. In one embodiment, the micron-sized abrasive particles have a primary particle size ranging from 0.5 micron to 111 Å to 5 〇 201037064, and the micron-sized abrasive particles have a primary particle size range of _ μ:. Although the primary particle size of the micron-sized abrasive grains is too large (for example, greater than 5 μm μη), scratches are formed on the surface of the wafer. When the micron bribe is less than 0.5 μm, the removal rate of the reaction layer will be lower.
在-實施财’微米級餘之含量範_ 5至4 ^分比(wt%)。當微米級磨粒之含量範圍低於$時，則移除 率之改^會不顯著。當微米級餘之含量範圍高於重量 百分比時，則移除率之提升不會進—步地改善，且可能造 成晶圓表面刮傷。微米級磨粒之材f包括金屬氧化物、破 ㈣或氮化物。金屬氧化物包括二氧切、二氧化飾、二 氧化鈦、二氧化錯、二氧化辞、二氧化猛、三氧化二铭、 三氧化二鐵；碳化物包括鑽石、碳切、、碳化鐵、 竣化欽、心bl喊她；氮化物包减切、氮化棚、 氮化鈦或氮傾。在—實_中，微練磨粒為 二氧化一銘、鐵石、碳化;ς夕或氮化蝴。In the implementation of the financial micron level of the content range _ 5 to 4 ^ points ratio (wt%). When the content of the micron-sized abrasive grains is less than $, the removal rate is not significant. When the content of the micron-sized remainder is higher than the weight percentage, the increase in the removal rate is not further improved and may cause scratches on the wafer surface. The material f of the micron-sized abrasive grains includes a metal oxide, a broken (tetra) or a nitride. Metal oxides include dioxotomy, oxidizing, titanium dioxide, dioxins, dioxin, bismuth dioxide, bismuth oxide, ferric oxide; carbides including diamonds, carbon cuts, iron carbide, bismuth Qin, heart bl called her; nitride package cut, nitride shed, titanium nitride or nitrogen tilt. In the - _, the micro-grinding abrasive is a dioxide, a stone, carbonization;
在-實施例中’微米級磨粒之莫氏硬度大於二氧化石夕 的莫氏硬度。在另-實施例中，微米級磨粒之莫氏硬度大 於8。在又-實補巾，微米級餘之莫氏硬度大於8。當 微米級磨粒之莫氏硬度小於二氧化矽的莫氏硬度時，移除 效果不佳。 在一實施例中，微米級磨粒為等軸(equiaxed)粒子。 在另-實施例中，微米級磨粒的形狀為次粒狀或次圓狀。 當微米級磨粒具有上述形狀時’可降低磨粒在晶圓表面產 生深到痕的機率。 10 201037064 ------ oc/π 界面活性劑可幫助拋光時之盤面降溫。在一實施例中， 界面活性劑含量範圍為至1000 ppm。含量低於10 ppm 守所肖b降的盤面溫度非常有限。當界面活性劑含量高於 1000 ppm時，會產生泡沫，導致移除率下降。界面活性劑 包括非離子型界面活性劑’例如是烷芳基聚醚醇(alkylaryl poly ether alcohol)、胺聚乙二醇聚縮合物(amine p〇iygiyC〇i condensate)、聚乙氧加成物(p〇iyeth〇xy adduct)、改質之聚 乙氧化醇類(modified polyethoxylated alcohol)或是改質的 乙氧基化合物(modified ethoxy late)。 分散劑有助於奈米級磨粒之懸浮穩定性，且有助於移除 量之均勻性。分散劑的含量為10至1000 pprn。當分散劑的 含量低於10 ppm時’會造成奈米級磨粒之懸浮穩定性不 足。當分散劑的含量高於1000 ppm時’會導致移除率下 降。分散劑包括三乙醇胺(triethanolamine)、丙烯酸聚合物 (acrylic Polymer)或其鹽類、乙醇乙氧基化物（alc〇h〇1 ethoxy late，AE)、或是其混合物。 ❹ 吸熱劑則可進一步幫助拋光時之盤面降溫。吸熱劑的含量 為5至50重量百分比。吸熱劑含量低於5重量百分比時， 所能降的盤面溫度非常有限。當界面活性劑含量高於5〇 重量百分比時，不會進一步協助降低盤面溫度。吸熱劑包 括醇類如乙二醇(ethylene glycol)、曱醇(methanol)、聚乙二 醇(polyethylene glycol)、丙二醇(propylene glycol)。 pH調整劑用來調整組成物的pH值，當組成物之pH 調整在9至12左右的話’則可以提供有效、且可控制之移 11 201037064 除速率。pH調整劑包括胺化合物、鹼金族金屬之氫氧化物 或氨水。在一實施例中’ pH調整劑為四曱基氫氧化銨 (tetramethyl ammonium hydroxide，TMAH)或氫氧化鉀。 水可以是去離子水或是純水等。 在進行藍寶石晶圓片的抛光時，可以以上述之組成物 作為拋光液’或是藉由水稀釋。在進行拋光時。拋光液流 量約為30〜50毫升/分鐘(mi/min)。拋光台轉速約為丨2〇至 200 rpm。拋光的時間約為丨2〇分鐘。 【實例】 將藍寶石晶圓片以習知的硬拋光製程加上細拋光製 程進行研拋。並將藍寶石晶圓片以本發明的細拋光製程進 4亍研抛。其中抛光製程的參數設定如表1所示，抛光至預 定時間的移除量如表2所示。表3所示為本實例所使用之 拋光液的基本物理性質。 表1 拋光工件 2吋藍寶石晶圓研磨片 製程 習知舊製程 本發明製程 製程步驟 粗抛光 細拋光 細拋光 拋光機台直徑 24英吋銅盤 32英吋 32英吋 抛光塾種類 無 Suba™(PU) Suba™(PU) 抛光液流量 霧狀噴灑 20〜30公升/分鐘 30〜50毫升/分鐘 拋光台轉速 40-80 rpm 60-100 rpm 120 〜200 rpm 拋光時間 30〜60分鐘 120分鐘 120分鐘 12 201037064 知‘.Joc/hl 表2 本發明組成物 移除量 時間 20 〜25 μηι 30分鐘 2 〜7 μιη 60分鐘 10〜20 μηι 60分鐘 鑽石 矽溶膠 研拋製程 習知硬抛光 習知細拋光 本發明細拋光 Ο 表3 ~-—--- m m i 微米研磨粒） 3 5士 1.0 wt% 微米，磨化_鋁） 10土0.5 wt% 奈米研磨粒含量“々汝现） -- 25±0,5 wt% PH ------ >10.5 黏度 ---- < 20 cps 總體密度 ~1.25 g/cm3In the examples, the Mohs hardness of the micron-sized abrasive grains is greater than the Mohs hardness of the silica dioxide. In another embodiment, the micron-sized abrasive particles have a Mohs hardness greater than 8. In the re-fixed towel, the Mohs hardness of the micron-sized residue is greater than 8. When the Mohs hardness of the micron-sized abrasive grains is less than the Mohs hardness of the cerium oxide, the removal effect is not good. In one embodiment, the micron-sized abrasive particles are equiaxed particles. In another embodiment, the micron-sized abrasive particles are in the form of sub-granular or sub-circular shapes. When the micron-sized abrasive grains have the above shape, the probability that the abrasive grains are deep to the surface of the wafer can be reduced. 10 201037064 ------ oc/π surfactants help to cool the surface of the disk during polishing. In one embodiment, the surfactant content ranges from up to 1000 ppm. The surface temperature below 10 ppm is very limited. When the surfactant content is higher than 1000 ppm, foam is generated, resulting in a decrease in the removal rate. The surfactant includes a nonionic surfactant, such as an alkylaryl polyether alcohol, an amine p〇iygiyC〇i condensate, a polyoxyethylene adduct. (p〇iyeth〇xy adduct), modified polyethoxylated alcohol or modified ethoxy late. The dispersant contributes to the suspension stability of the nano-sized abrasive particles and contributes to the uniformity of the removal amount. The dispersant content is from 10 to 1000 pprn. When the content of the dispersant is less than 10 ppm, the suspension stability of the nano-sized abrasive grains may be insufficient. When the content of the dispersant is higher than 1000 ppm, the removal rate is lowered. The dispersing agent includes triethanolamine, acrylic polymer or a salt thereof, ethanol ethoxylate (AEc), or a mixture thereof.吸 The heat absorber can further help the surface of the disk during polishing to cool down. The heat absorbing agent is contained in an amount of 5 to 50% by weight. When the content of the heat absorbent is less than 5% by weight, the temperature of the disk surface which can be lowered is very limited. When the surfactant content is above 5 重量 by weight, there is no further assistance in lowering the disk surface temperature. The heat absorbing agent includes alcohols such as ethylene glycol, methanol, polyethylene glycol, and propylene glycol. The pH adjuster is used to adjust the pH of the composition. When the pH of the composition is adjusted to about 9 to 12, an effective and controllable shift can be provided. The pH adjusting agent includes an amine compound, a hydroxide of an alkali metal group, or ammonia water. In one embodiment, the pH adjusting agent is tetramethyl ammonium hydroxide (TMAH) or potassium hydroxide. The water can be deionized water or pure water. In the polishing of the sapphire wafer, the above composition may be used as the polishing liquid or diluted by water. When polishing. The flow rate of the polishing liquid is about 30 to 50 ml/min (mi/min). The polishing table rotates at approximately 〇2〇 to 200 rpm. The polishing time is about 〇2〇 minutes. [Example] The sapphire wafer was polished by a conventional hard polishing process plus a fine polishing process. The sapphire wafer is then thrown into the fine polishing process of the present invention. The parameter setting of the polishing process is shown in Table 1, and the amount of removal after polishing to a predetermined time is shown in Table 2. Table 3 shows the basic physical properties of the polishing liquid used in the present example. Table 1 Polished Workpiece 2吋Sapphire Wafer Grinding Sheet Process Conventional Process The process of the invention is rough polishing fine polishing fine polishing machine diameter 24 inch copper plate 32 inch 32 inch polished 塾 type without SubaTM (PU) SubaTM (PU) slurry flow mist spray 20~30 liters/min 30~50 ml/min Polishing table speed 40-80 rpm 60-100 rpm 120~200 rpm Polishing time 30~60 minutes 120 minutes 120 minutes12 201037064 Known '.Joc / hl Table 2 The composition of the present invention removal time 20 ~ 25 μηι 30 minutes 2 ~ 7 μιη 60 minutes 10~20 μηι 60 minutes diamond 矽 sol grinding polishing process conventional hard polishing fine polishing fine hair Polished Ο Table 3 ~----- mmi micron abrasive grain) 3 5士 1.0 wt% micron, 磨化_aluminum) 10 soil 0.5 wt% nano-abrasive grain content "々汝现) -- 25±0, 5 wt% PH ------ >10.5 Viscosity---- < 20 cps Total Density ~1.25 g/cm3
由以上表2的結果可知’雖然本發明的細拋光製程的 牙夕除i略小於習知硬拋光製程加細拋光製程的移除量，但 =兩者之間的差異量並不大，在時間方面則能看見明顯的 縮減，並且本發明可以省卻硬拋光製程，因此能夠省卻與 硬拋光製程相關的各種成本。 簡而言之，以本發明之組成物或經由稀釋後來作為拋 光液以進行拋光的話，可以省卻習知的硬拋光製程，因此 拋光製程可以簡化，有助於節省成本。而且本發明的細拋 光製程相較於習知的硬拋光製程加細拋光製程可以縮短拋 13 201037064 光時間 、口此有助於產率的提昇。 太二然ff明已以實施例揭露如上，然其並非用以限定 圍内，當可作些許之更動與潤飾，因此本=精:申:範 當視後附之申請專利範圍所界定者為準。x保4乾圍 【圖式簡單說明】 益 【主要元件符號說明】 益 ❹It can be seen from the results of Table 2 above that although the tooth polishing process of the fine polishing process of the present invention is slightly smaller than the removal amount of the conventional hard polishing process and the fine polishing process, the difference between the two is not large, Significant reductions can be seen in terms of time, and the present invention eliminates the need for a hard polishing process, thereby eliminating the various costs associated with the hard polishing process. In short, the conventional hard polishing process can be omitted by using the composition of the present invention or by polishing as a polishing liquid for polishing, so that the polishing process can be simplified and contributes to cost saving. Moreover, the fine polishing process of the present invention can shorten the light time of the conventional hard polishing process and the fine polishing process, and the mouth can contribute to the improvement of the yield. Too two ff Ming has been exposed as above in the examples, but it is not intended to be used to limit the scope, when some changes and refinements can be made, therefore, this = fine: Shen: Fan Zongwei attached to the scope of the patent application is defined as quasi. x保4干围 [Simple diagram description] Benefits [Main component symbol description] Benefits
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