200934845 九、發明說明： 【發明所屬之技術領域】 本發明是有關於一種拋光組成物及使用此拋光組成物 之拋光方法，且特別是有關於拋光藍寶石之組成物及使用 此組成物之藍寶石的拋光方法。 【先前技術】 發光二極體（Light-Emitting Diode，LED)具有省電、 ❹ 壽命長、耐震及低發熱等多項優點，超高亮度之白/藍光 LED ’在未來將可取代現行之白熱燈泡與齒素燈泡。超高 亮度白/藍光LED的品質，取決於氮化鎵(GaN)的磊晶品 質’而氮化鎵的磊晶品質，則與所使用的藍寶石基板表面 加工的品質息息相關。 藍寶石相硬度高且熔點高，是一種相當難加工的脆性 陶瓷材料。由於藍寶石（單晶三氧化二鋁）的晶體結構與氮 化鎵相同，是製造白光/藍LED的關鍵材料之一。唯有平 整的藍寶石晶圓加工表面，才能生長出品質極佳的高亮度 © 的 LED。 藍寶石具有極高之化學惰性（chemical inertness)，使 =強酸或強，之化學拋光液，難以與其起有效之拋光效 ，。而使用高溫之舰組合物，雖能有效地雜藍寶石， ^有高度的危險性’不適合於—般之加卫環境，且仍不 月t*達到表面平坦度與粗糙度的要求。 進行研磨拋光’亦無法=達的::來 4 200934845 純粹機械作用的研磨抛光’晶圓表面會產生機械性的刮 傷，表面品質無法符合磊晶製程的要求。 因此，藍寶石晶圓的抛光加工技術，必須克服硬脆材 料的加工瓶頸，使藍寶石晶圓表面的加工品質可達到對於 超馬免度LED基板材料的需求，如厚度均勻度(T〇tai200934845 IX. Description of the Invention: [Technical Field] The present invention relates to a polishing composition and a polishing method using the same, and in particular to a composition for polishing sapphire and a sapphire using the same Polishing method. [Prior Art] Light-Emitting Diode (LED) has many advantages such as power saving, long life, shock resistance and low heat generation. Ultra-high brightness white/blue LED will replace the current white heat bulb in the future. Light bulb with dentate. The quality of ultra-high brightness white/blue LEDs depends on the epitaxial quality of gallium nitride (GaN) and the epitaxial quality of gallium nitride is closely related to the quality of the surface of the sapphire substrate used. The sapphire phase has a high hardness and a high melting point and is a brittle ceramic material that is quite difficult to process. Since sapphire (single crystal aluminum oxide) has the same crystal structure as gallium nitride, it is one of the key materials for the manufacture of white/blue LEDs. Only a flat sapphire wafer is machined to produce a high-brightness LED with excellent quality. Sapphire has a very high chemical inertness, making it a strong acid or strong chemical polishing solution that is difficult to effectively polish. The use of high-temperature ship composition, although effective sapphire, is highly dangerous. It is not suitable for the environment, and it still does not meet the requirements of surface flatness and roughness. Grinding and polishing 'can't be reached:: Come 4 200934845 Purely mechanical grinding and polishing' The surface of the wafer will be mechanically scratched, and the surface quality will not meet the requirements of the epitaxial process. Therefore, the sapphire wafer polishing technology must overcome the processing bottleneck of hard and brittle materials, so that the processing quality of the sapphire wafer surface can meet the demand for ultra-horse free LED substrate materials, such as thickness uniformity (T〇tai
Thickness Variation，TTV)、表面粗糙度(Surface Roughness，Thickness Variation (TTV), Surface Roughness (Surface Roughness,
Ra)，透光性以及翹曲量。 φ 相較於傳統的矽晶圓材料拋光，或1C先進製程中的 化學機械拋光，藍寶石晶圓之拋光具有更高之困難度；藍 寶石晶圓的拋光，其下壓力較高’藉此激發拋光液與藍寶 石晶圓表面之化學作用，達到有效的拋光效果。在拋光機 具與拋光墊等參數皆固定的情況下，拋光液的特性將扮演 關鍵的角色。除此之外’也必須有效地抑制機台震動，並 且避免因拋光液成分產生泡沫。更重要的是能提供較高之 移除速率，且必須避免拋光盤面溫度過高，以減少表面因 為尚溫所造成之變形。此外，還必須能保持晶圓中心與邊 © 緣較為一致之移除率。 【發明内容】 本發明知_供一種抛光藍寶石的組成物及方法，其可在 進行拋光時，降低拋光盤面的溫度，減少藍寶石晶片因受 熱應力而變形。 本發明又提供一種拋光藍寶石的組成物及方法，其可 以使得晶圓中心與邊緣具有一致的移除率。 本發明提出一種用於拋光藍寶石之組成物，包括：10 5 200934845 _ . 的奈米級磨粒；10至1000ppm的界面活 ^ 至1〇〇〇PPm的分散劑；5至50重量百分比的吸 …劑’以及其餘為水，以組成物之總重量為基準。 依照本發明實施例所述，上述之用於拋光藍 寶石之組 成^中’奈米級磨粒之材質包括金屬氧化物、碳化物或氮 化物。 依照本發明實施例所述，上述之用於拋光藍寶石之組 ❹成物中金屬氧化物包括二氧化石夕、二氧化錦、二氧化欽、 二氧化結、二氧化鋅、二氧化經、三氧化二减三氧化二 鐵；碳化物包括碳化石夕、碳化爛、碳化鶴、碳化鈦、碳化 錯或碳化飢；氮化物包括氮化石夕、氣化蝴、氣化碳、氣化 鈦或氮化鍅。 依照本發明實施例所述，上述之用於拋光藍寶石之组 成物中，奈米級磨粒為矽溶膠(c〇u〇idalsilica)。 依照本發明實施例所述，上述之用於拋光藍 寶石之組 成物中，奈米級磨粒之一次粒徑範圍為1〇nm至2〇〇nm^ © 依照本發明實施例所述，上述之用於搬光藍寶石之組 成物中，奈米級磨粒之一次粒徑範圍為6〇11111至12〇nme 依照本發明實施例所述’上述之用於拋光藍寶石之組 成物中’界面活性劑包括非離子型界面活性劑。 依照本發明實施例所述，上述之用於拋光藍寶石之組 成物中，非離子型界面活性劑包括烷芳基聚醚醇(alkylalyl polyether alcohol)、胺聚乙二醇聚縮合物(amine p〇iygiyC〇i condensate)、聚乙氧加成物(p〇lyethoxy adduct)、改質之聚 200934845 乙氧化醇類(modified poly ethoxy lated alcohol)或是改質的 乙氧基化合物(modified ethoxylate)。 依照本發明實施例所述，上述之用於拋光藍寶石之組 成物中，吸熱劑包括乙二醇（ethylene glycol)、曱醇 (methanol)、聚乙二醇（polyethylene glycol)、丙二醇 (propylene glycol)。 依照本發明實施例所述，上述之用於拋光藍寶石之組 ❹ 成物中，分散劑包括三乙醇胺(triethanolamine)、丙烤酸聚 合物(acrylic polymer)或其鹽類、乙醇乙氧基化物(aic〇h〇i ethoxylate，AE)、或是其混合物。 本發明又提出一種藍寶石的拋光方法，此方法包括提 供一組成物。此組成物包括：10至重量百分比的奈米 級磨粒；10至1000ppm的界面活性劑；10至1〇〇〇ppm的 分散劑；5至50重量百分比的吸熱劑；以及其餘為水。然 後，以水稀釋組成物，形成一稀釋組成物。在稀釋的組成 物中’奈米級磨粒的含量為2至40重量百分比。之後，以 ❿ 稀釋的組成物對藍寶石進行拋光。 依照本發明實施例所述，上述之藍寶石的拋光方法 中，奈米級磨粒之材質包括金屬氧化物、碳化物或氮化物。 金屬氧化物包括二氧化矽、二氧化鈽、二氧化鈦、二氧化 锆、二氧化辞、二氧化猛、三氧化二銘或三氧化二鐵。碳 化物包括碳化石夕、碳化爛、碳化鎢、碳化欽、碳化錯或碳 化^。氮化物包括氮化發、氮化硼、氮化碳、氮化鈦或氮 化鉛。 200934845 依照本發明實施例所述，上述之藍寶石的拋光方法 中’奈米級磨粒之一次粒徑範圍為10 nm至200 nm。 依照本發明實施例所述’上述之藍寶石的拋光方法 中，奈米級磨粒之一次粒徑範圍為60 nm至120 nm。 依照本發明實施例所述，上述之藍寶石的拋光方法 中，界面活性劑包括非離子塑界面活性劑。非離子型界面 活性劑包括烧芳基聚醚醇(alkylaryl p〇lyether alcohol)、胺 ❺ 聚乙二醇聚縮合物(amine poly gly c〇l condensate)、聚乙氧加 成物(polyethoxy adduct)、改質之聚乙氧化醇類(modified polyethoxylated alcohol)或是改質的乙氧基化合物 (modified ethoxylate)。 依照本發明實施例所述，上述之藍寶石的拋光方法 中，吸熱劑包括乙二醇(ethylene glycol)、甲醇(methanol)、 聚乙二醇(polyethylene glycol)或丙二醇(propylene glycol)。 依照本發明實施例所述，上述之藍寶石的拋光方法 中，分散劑包括三乙醇胺(triethanolamine)、丙烯酸聚合物 © (acrylic polymer)或其鹽類、乙醇乙氧基化物（alcohol ethoxylate，AE)、或是其混合物。 依照本發明實施例所述’上述之藍寶石的拋光方法 中，稀釋的組成物包括40重量百分比的二氧化矽、300ppm 的胺聚乙二醇聚縮合物、200 ppm的分散劑混合物及20重量 百分比的乙二醇，其餘為水。 依照本發明實施例所述’上述之藍寶石的拋光方法 中，稀釋的組成物包括20重量百分比的二氧化石夕、150ppm 8 200934845 的胺聚乙二醇聚縮合物、100ppm的分散劑混合物及10重量 百分比的乙二醇，其餘為水。 依照本發明實施例所述’上述之藍寶石的拋光方法 中，在藍寶石上所施加的壓力為2.0〜6.0 kg/cm2。 依照本發明實施例所述，上述之藍寶石的拋光方法 中，藍寶石的轉速為50至150 rpm。 依照本發明實施例所述，上述之藍寶石的拋光方法 φ 中，稀釋的組成物的流量為300〜1000 ml/min。 本發明之拋光藍寶石的組成物及方法，其可降低盤面 的溫度，減少藍寶石晶片因受熱應力而變形。 本發明之拋光藍寶石的組成物及方法，其可以使得晶 圓中心與邊緣具有一致的移除率。 本發明之藍寶石的研磨液’其可降低表面粗糙度，減 少缺陷’提高藍寶石之拋光後之表面品質如表面粗糙度（Ra) 以及厚度均勻度(Total Thickness Variation，TTV)。 本發明之藍寶石的加工方法，具有足夠高的移除率， ® 可提高量產之可行性，並提高產能。 為讓本發明之上述和其他目的、特徵和優點能更明顯 易懂，下文特舉較佳實施例，並配合所附圖式，作詳細說 明如下。 【實施方式】 ,本發明提出兩種用於拋光藍寶石之組成物，其包括奈 米級磨粒、界面活性劑、分散劑以及吸熱劑。更具體地說， 本發明之用於拋光藍寶石的組成物包括：1〇至6〇重量百 9 200934845 分比的奈米級磨粒；10至lOOOppm的界面活性劑；ι〇至 lOOOppm的分散劑；5至50重量百分比的吸熱劑，其餘為 水。在說明書中，所述的重量百分比是以組成物之重量為 基準來計算的。 在一實施例中，奈米級磨粒之一次粒徑範圍為10奈米 (nm)至200 rnn。在另一實施例中，第奈米級磨粒之一次粒 徑範圍為60 nm至120 nm。當奈米級磨粒之一次粒徑太大 ❹ 時(例如:大於200nm)，所拋光的藍寶石表面之品質不佳。 當奈米級磨粒之一次粒徑小於l〇nm時，拋光的速度將會 過低。 在一實施例中，奈米級磨粒之含量範圍為1〇至60重 量百分比(wt%)。在另一實施例中，奈米級磨粒之含量範圍 為20至50重量百分比。在又一實施例中，奈米級磨粒之 含量為40重量百分比。當奈米級磨粒之含量範圍低於1〇 時，移除效果不佳，甚至無移除效果。當奈米級磨粒之含 量範圍高於60重量百分比時，對移除速率之提昇無助益， ® 且成本高。奈米級磨粒之材質包括金屬氧化物、碳化物或 氮化物。金屬氧化物包括二氧化石夕、二氧化筛、二氧化鈦、 一氧化錯、二氧化鋅、二氧化猛、三氧化二鋁或三氧化二 鐵。碳化物包括碳化發、碳化删、碳化鎢、碳化鈦、碳& 鍅或碳化釩。氮化物包括氮化矽、氮化硼、氮化碳、氮化 鈦或氮化锆。在一實施例中，奈米級磨粒為矽溶膠。 界面活性劑可幫助拋光時之盤面降溫。在一實施例中， 界面活性劑含量範圍為1〇至1〇〇〇ppm。在另一實施例中， 200934845 界面活性劑含量範圍為100至lOOOppm。在又一實施例 中’當界面活性劑的含量為300ppm。含量低於10 ppm時， 所能降的盤面溫度非常有限。當界面活性劑含量高於1〇〇〇 ppm時’會產生泡沫，導致移除率下降。界面活性劑包括 非離子型界面活性劑，例如是烧芳基聚醚醇(alkylaryl polyether alcohol)、胺聚乙二醇聚縮合物(amine p〇lyglyc〇l condensate)、聚乙氧加成物(polyethoxy adduct)、改質之聚 Ο 乙氧化醇類(modified polyethoxylated alcohol)或是改質的 乙氧基化合物(modified ethoxy late)。 分散劑有助於奈米級磨粒之懸浮穩定性，且有助於移除 量之均勻性。分散劑的含量為10至lOOOppm。當分散劑的 含量低於10ppm時，會造成奈米級磨粒之懸浮穩定性不 足。當分散劑的含量高於lOOOppm時，會導致移除率下降。 分散劑包括三乙醇胺(triethanolamine)、丙烯酸聚合物 (acrylic polymer)或其鹽類、乙醇乙氧基化物（alcohol ethoxylate，AE)、或是其混合物。 〇 吸熱劑則可進一步幫助拋光時之盤面降溫。吸熱劑的含量 為5至50重量百分比。吸熱劑含量低於5重量百分比時， 所能降的盤面溫度非常有限。當界面活性劑含量高於50 重量百分比時，不會進一步協助降低盤面溫度。吸熱劑包 括醇類如乙二醇(ethylene glycol)、曱醇(methanol)、聚乙二 醇(polyethylene glycol)、丙二醇(propylene glycol)。 水可以是去離子水或是純水等。 在進行藍寶石晶圓片的拋光時，可以以上述之組成物 11 200934845 之又詈測^福由水稀釋，使其中所含之奈米級磨粒 =範，2至40重量百分比。在一具體例中，稀釋後 =拋光液中包括4〇重量百分比的二氧化碎、約3⑻鹏的胺Ra), light transmission and warpage. φ Compared to conventional tantalum wafer material polishing, or chemical mechanical polishing in 1C advanced process, polishing of sapphire wafers is more difficult; polishing of sapphire wafers has higher downforce' The chemical action of the liquid and the surface of the sapphire wafer achieves an effective polishing effect. The characteristics of the polishing fluid will play a key role in the case where the parameters such as the polishing machine and the polishing pad are fixed. In addition to this, it is also necessary to effectively suppress the vibration of the machine and to avoid foaming due to the composition of the polishing liquid. More importantly, it provides a higher removal rate and must avoid excessive polishing of the disk surface to reduce distortion of the surface due to temperature. In addition, it must be able to maintain a consistent removal rate between the center of the wafer and the edge of the edge. SUMMARY OF THE INVENTION The present invention is directed to a composition and method for polishing sapphire which reduces the temperature of the polishing disk surface during polishing and reduces the deformation of the sapphire wafer due to thermal stress. The present invention further provides a composition and method for polishing sapphire that provides consistent removal rates at the center and edge of the wafer. The invention provides a composition for polishing sapphire, comprising: 10 5 200934845 _. nanometer abrasive particles; 10 to 1000 ppm interface activity to 1 〇〇〇 PPm dispersant; 5 to 50 weight percent suction The agent 'and the rest are water, based on the total weight of the composition. According to an embodiment of the present invention, the material for polishing the sapphire composition of the 'nano-grade abrasive grains' includes a metal oxide, a carbide or a nitride. According to the embodiment of the present invention, the metal oxides of the above-mentioned group for polishing sapphire include cerium oxide, bismuth dioxide, dioxins, dioxide, zinc dioxide, dioxide, and tri Oxidation of diiron trioxide; carbides include carbon carbide, carbonized rotten, carbonized crane, titanium carbide, carbonization or carbonation; nitrides include nitride, gasification, gasification, titanium or nitrogen Phlegm. According to an embodiment of the present invention, in the composition for polishing sapphire, the nano-sized abrasive particles are c矽u〇idalsilica. According to the embodiment of the present invention, in the composition for polishing sapphire, the primary particle size of the nano-sized abrasive particles ranges from 1 〇 nm to 2 〇〇 nm ^ © according to an embodiment of the present invention, the above In the composition for glazing sapphire, the primary particle size of the nano-sized abrasive grains ranges from 6 to 11111 to 12 〇nme. The above-mentioned composition for polishing sapphire is described in the embodiment of the present invention. Includes nonionic surfactants. According to the embodiment of the present invention, in the composition for polishing sapphire, the nonionic surfactant includes an alkylalyl polyether alcohol and an amine polyethylene glycol polycondensate (amine p〇). iygiyC〇i condensate), p〇lyethoxy adduct, modified polycondensate 200934845 modified poly ethoxy lated alcohol or modified ethoxylate. According to the embodiment of the present invention, in the composition for polishing sapphire, the heat absorbing agent comprises ethylene glycol, methanol, polyethylene glycol, propylene glycol. . According to an embodiment of the present invention, in the above composition for polishing sapphire, the dispersing agent comprises triethanolamine, acrylic polymer or a salt thereof, and ethanol ethoxylate ( Aic〇h〇i ethoxylate, AE), or a mixture thereof. The invention further provides a method of polishing sapphire comprising providing a composition. The composition comprises: 10 to weight percent of nano-sized abrasive particles; 10 to 1000 ppm of a surfactant; 10 to 1 ppm of a dispersant; 5 to 50% by weight of a heat-absorbing agent; and the balance being water. The composition is then diluted with water to form a diluted composition. The content of the 'nano-grade abrasive grains in the diluted composition is 2 to 40% by weight. The sapphire is then polished with a 稀释 diluted composition. According to the embodiment of the present invention, in the polishing method of the sapphire, the material of the nano-sized abrasive grains includes a metal oxide, a carbide or a nitride. The metal oxides include cerium oxide, cerium oxide, titanium dioxide, zirconium dioxide, dioxins, arsenic dioxide, bismuth trioxide or ferric oxide. Carbides include carbon carbide, carbonized rotten, tungsten carbide, carbon carbide, carbonization or carbonization. The nitride includes nitrided, boron nitride, carbon nitride, titanium nitride or lead nitride. 200934845 According to an embodiment of the present invention, the above-mentioned sapphire polishing method has a primary particle size ranging from 10 nm to 200 nm. In the polishing method of the above sapphire according to the embodiment of the present invention, the primary grain size of the nano-sized abrasive grains ranges from 60 nm to 120 nm. According to an embodiment of the present invention, in the above sapphire polishing method, the surfactant includes a nonionic plastic surfactant. Nonionic surfactants include alkylaryl p〇lyether alcohol, amine poly gly c condensate, polyethoxy adduct Modified polyethoxylated alcohol or modified ethoxylate. According to an embodiment of the present invention, in the above method for polishing sapphire, the heat absorbing agent includes ethylene glycol, methanol, polyethylene glycol or propylene glycol. According to an embodiment of the present invention, in the above method for polishing sapphire, the dispersing agent comprises triethanolamine, acrylic polymer or a salt thereof, alcohol ethoxylate (AE), Or a mixture thereof. In the above method for polishing a sapphire according to an embodiment of the present invention, the diluted composition includes 40% by weight of cerium oxide, 300 ppm of an amine polyethylene glycol polycondensate, 200 ppm of a dispersant mixture, and 20% by weight. Ethylene glycol, the rest is water. In the above method for polishing sapphire according to an embodiment of the present invention, the diluted composition comprises 20% by weight of cerium oxide, 150 ppm of 8,800,348,45 of an amine polyethylene glycol polycondensate, 100 ppm of a dispersant mixture, and 10 The weight percentage of ethylene glycol and the balance is water. In the polishing method of the above sapphire according to the embodiment of the present invention, the pressure applied to the sapphire is 2.0 to 6.0 kg/cm2. According to an embodiment of the present invention, in the above sapphire polishing method, the sapphire has a rotational speed of 50 to 150 rpm. According to the embodiment of the present invention, in the above-described polishing method φ of sapphire, the flow rate of the diluted composition is 300 to 1000 ml/min. The composition and method of the polished sapphire of the present invention can reduce the temperature of the disk surface and reduce the deformation of the sapphire wafer due to thermal stress. The composition and method of the polished sapphire of the present invention can provide a uniform removal rate of the center of the crystal and the edge. The sapphire slurry of the present invention can reduce surface roughness and reduce defects, and improve the surface quality after polishing of sapphire such as surface roughness (Ra) and total thickness variation (TTV). The sapphire processing method of the present invention has a sufficiently high removal rate, and ® can improve the feasibility of mass production and increase productivity. The above and other objects, features and advantages of the present invention will become more <RTIgt; [Embodiment] The present invention proposes two compositions for polishing sapphire, which include nano-sized abrasive particles, a surfactant, a dispersant, and a heat absorbing agent. More specifically, the composition for polishing sapphire of the present invention comprises: 1 〇 to 6 〇 weight 2009 9 200934845 ratio of nano-sized abrasive particles; 10 to 1000 ppm of surfactant; 〇 〇 to 1000 ppm of dispersant 5 to 50% by weight of the heat absorbing agent, and the balance being water. In the specification, the weight percentages are calculated based on the weight of the composition. In one embodiment, the nano-sized abrasive particles have a primary particle size ranging from 10 nanometers (nm) to 200 rnn. In another embodiment, the first nanometer abrasive grain has a primary particle diameter ranging from 60 nm to 120 nm. When the primary particle size of the nano-sized abrasive grains is too large (for example, greater than 200 nm), the quality of the polished sapphire surface is not good. When the primary particle size of the nano-sized abrasive grains is less than 10 nm, the polishing speed will be too low. In one embodiment, the nano-sized abrasive particles are present in an amount ranging from 1 Torr to 60 weight percent (wt%). In another embodiment, the nanoscale abrasive particles are present in an amount ranging from 20 to 50 weight percent. In still another embodiment, the content of the nano-sized abrasive grains is 40% by weight. When the content of the nano-grain is less than 1 ,, the removal effect is not good or even removed. When the nano-grain content is above 60% by weight, it does not contribute to the removal rate, and the cost is high. The material of the nano-scale abrasive grains includes metal oxides, carbides or nitrides. Metal oxides include cerium dioxide, silica dioxide, titanium dioxide, oxidization, zinc dioxide, bismuth dioxide, aluminum oxide or ferric oxide. Carbides include carbonized hair, carbonized carbon, tungsten carbide, titanium carbide, carbon & or vanadium carbide. The nitride includes tantalum nitride, boron nitride, carbon nitride, titanium nitride or zirconium nitride. In one embodiment, the nano-sized abrasive particles are cerium sols. The surfactant helps to cool the surface of the disk during polishing. In one embodiment, the surfactant content ranges from 1 Torr to 1 Torr. In another embodiment, the 200934845 surfactant content ranges from 100 to 1000 ppm. In yet another embodiment, the amount of surfactant is 300 ppm. When the content is less than 10 ppm, the temperature of the disk surface that can be lowered is very limited. When the surfactant content is higher than 1 〇〇〇 ppm, foaming occurs, resulting in a decrease in the removal rate. Surfactants include nonionic surfactants such as alkylaryl polyether alcohol, amine pethylene glycol polycondensate (amine p〇lyglyc〇l condensate), polyoxyethylene adduct ( Polyethoxy adduct), modified polyethoxylated alcohol or modified ethoxy late. The dispersant contributes to the suspension stability of the nano-sized abrasive particles and contributes to the uniformity of the removal amount. The dispersant is contained in an amount of from 10 to 1,000 ppm. When the content of the dispersant is less than 10 ppm, the suspension stability of the nano-sized abrasive grains may be insufficient. When the content of the dispersant is higher than 1000 ppm, the removal rate is lowered. The dispersing agent includes triethanolamine, acrylic polymer or a salt thereof, alcohol ethoxylate (AE), or a mixture thereof.吸 The heat absorber can further help the surface of the disk during polishing to cool down. The heat absorbing agent is contained in an amount of 5 to 50% by weight. When the content of the heat absorbent is less than 5% by weight, the temperature of the disk surface which can be lowered is very limited. When the surfactant content is above 50% by weight, there is no further assistance in lowering the disk surface temperature. The heat absorbing agent includes alcohols such as ethylene glycol, methanol, polyethylene glycol, and propylene glycol. The water can be deionized water or pure water. In the polishing of the sapphire wafer, it can be diluted with water by the above-mentioned composition 11 200934845, so that the nano-grain particles contained therein are in the range of 2 to 40% by weight. In a specific example, after dilution = 4% by weight of the oxidized granules, about 3 (8) pt of amine in the polishing solution
❹ 聚5二醇聚縮合物、約 PPm的分散舰合物及約％重量 百分比的乙二醇，其餘為水。在另一實施例中，稀釋後的拋 光液中包括2G重量百分㈣二氧切、約⑼鹏的胺聚乙 一醇聚縮合物、約1〇〇ppm的分散劑混合物及約1〇重量百分 比的乙一醇，其餘為水。在進行拋光時，拋光機台下壓力 約為2〜6公斤/平方公分（kg/cm2) ^拋光液流量約為 300〜1000毫升/分鐘(ml/min)。拋光台轉速約為50至15〇 rpm。拋光的時間約為60至12〇分鐘。 【實例】 將研磨後之藍寶石晶圓片以表1所示之條件配合表2 中各實例的拋光液組成物進行拋光。在各實施例中，抛光 液均是以水為平衡。拋光完成之晶圓，以去離子水搭配聚 乙烯醇(polyvinyl alcohol，PVA)海綿做初步清洗，再將晶 圓置入水槽之晶盒(cassette)中’再進行最終之清洗與量測檢 驗。其抛光的結果如表2所示。 表1 拋光工件： 2吋藍寶石晶圓研磨片 拋光機台直徑： 32英吋 拋光機台下壓力： 3 kg/cm2 拋光液流量： 300〜1000毫升/分鐘 (ml/min) 12 200934845 拋光台轉速 80 rpm 抛光時間： 60〜120 分鐘（min) 由以上的實例顯示未添加介面活性劑或吸熱劑之二 氧化矽拋光液，其盤面溫度遠高於40°C，並且隨著二氧化 表2聚 Poly 5 diol polycondensate, a dispersion of about PPm and about 100% by weight of ethylene glycol, the balance being water. In another embodiment, the diluted polishing liquid comprises 2 G weight percent (tetra) dioxo, about (9) Peng amine polyglycol polycondensate, about 1 ppm of dispersant mixture, and about 1 weight percent. Ethyl alcohol, the rest is water. When polishing, the pressure under the polishing machine is about 2 to 6 kg/cm 2 (the flow rate of the polishing liquid is about 300 to 1000 ml/min (ml/min). The polishing table rotates at approximately 50 to 15 rpm. The polishing time is about 60 to 12 minutes. [Example] The ground sapphire wafer was polished with the polishing liquid composition of each example in Table 2 under the conditions shown in Table 1. In various embodiments, the polishing fluid is in equilibrium with water. The polished wafer is preliminarily cleaned with deionized water and polyvinyl alcohol (PVA) sponge, and the wafer is placed in a cassette of the sink' for final cleaning and measurement. The results of the polishing are shown in Table 2. Table 1 Polished workpiece: 2吋 Sapphire wafer polishing sheet polishing machine diameter: 32 inches polishing machine understage pressure: 3 kg/cm2 Polishing fluid flow rate: 300~1000 ml/min (ml/min) 12 200934845 Polishing table rotation speed 80 rpm Polishing time: 60~120 minutes (min) The above example shows the cerium oxide polishing solution without the addition of an surfactant or heat absorbing agent, the disk surface temperature is much higher than 40 ° C, and with the oxidation table 2
實 例 二氧化矽 界面 活性 劑 吸熱 劑 分散 劑 h2o PH 值 盤面 溫度 Ra 移除量(微米，um) 粒徑 (nm) (wt%) ppm Wt% ppm Wt% °c nm 平均 中心 邊緣 1 35 20 0 0 0 平衡 10 48 - 4-8 - - 2 50 20 0 0 0 平衡 10 52 - 5-8 - - 3 80 20 0 0 0 平衡 10 52 - 6-10 - - 4 150 20 0 0 0 平衡 10 53 * 6-11 - - 5 80 10 0 0 0 平衡 10 50 ~ 3-5 - - 6 80 30 0 0 0 平衡 10 53 - 7-12 - - 7 80 50 0 0 0 平衡 10 53 - 8-14 - - 8 80 60 0 0 0 平衡 10 54 8-15 - - 9 80 20 150 0 0 平衡 10 42 - 7-10 - - 10 80 20 500 0 0 平衡 10 42 6-8 11 80 20 1500 0 0 平衡 10 41 5-8 12 80 20 150 2 0 平衡 10 42 - 7-10 - - 13 80 20 150 10 0 平衡 10 39 - 7-10 14 80 20 150 15 0 平衡 10 38 - 7-10 15 80 20 150 25 0 平衡 10 39 - 7-10 16 80 20 150 30 0 平衡 10 39 - 7-10 17 80 20 150 10 25 平衡 10 39 1.6A 7-10 7-11 8-12 18 80 20 150 10 100 平衡 10 39 1.3 A 7-10 8-11 9-11 19 80 20 150 10 500 平衡 10 39 1.4A 6-10 7-9 7-10 20 80 20 150 10 1500 平衡 10 39 1.3A 6-9 6-9 7-10 13 200934845 石夕濃度之增加，盤面溫度亦隨之上升。而界祕 助拋光時之盤祕溫，但濃度過糾會產生_且移除: 會下降。吸熱顏可進-步幫赌光時讀研溫， 度過高時會進-步提升移除[此外，分散劑可幫助 二氧化矽磨粒之懸浮穩定性，且有助於移除量之均勻性， 但濃度過高時，移除率會下降。 ❹Examples of cerium oxide surfactant heat absorber dispersant h2o PH value disk surface Ra removal amount (micron, um) particle size (nm) (wt%) ppm Wt% ppm Wt% °c nm average center edge 1 35 20 0 0 0 Balance 10 48 - 4-8 - - 2 50 20 0 0 0 Balance 10 52 - 5-8 - - 3 80 20 0 0 0 Balance 10 52 - 6-10 - - 4 150 20 0 0 0 Balance 10 53 * 6-11 - - 5 80 10 0 0 0 Balance 10 50 ~ 3-5 - - 6 80 30 0 0 0 Balance 10 53 - 7-12 - - 7 80 50 0 0 0 Balance 10 53 - 8-14 - - 8 80 60 0 0 0 Balance 10 54 8-15 - - 9 80 20 150 0 0 Balance 10 42 - 7-10 - - 10 80 20 500 0 0 Balance 10 42 6-8 11 80 20 1500 0 0 Balance 10 41 5-8 12 80 20 150 2 0 Balance 10 42 - 7-10 - - 13 80 20 150 10 0 Balance 10 39 - 7-10 14 80 20 150 15 0 Balance 10 38 - 7-10 15 80 20 150 25 0 Balance 10 39 - 7-10 16 80 20 150 30 0 Balance 10 39 - 7-10 17 80 20 150 10 25 Balance 10 39 1.6A 7-10 7-11 8-12 18 80 20 150 10 100 Balance 10 39 1.3 A 7-10 8-11 9-11 19 80 20 150 10 500 Balance 10 39 1.4A 6-10 7-9 7-10 20 80 20 150 10 1500 Balance 10 39 1.3A 6-9 6-9 7-10 13 200934845 As the concentration of Shixi increases, the temperature of the disk surface also rises. The secret is to help the temperature of the plate when polishing, but the concentration will be corrected and the removal will decrease. The heat absorption can be entered into the step to help the gambling light to read the temperature of the study. When the temperature is too high, it will be stepped up and removed. [In addition, the dispersant can help the suspension stability of the cerium oxide abrasive particles and help to remove the amount. Uniformity, but when the concentration is too high, the removal rate will decrease. ❹
簡而言之，以本發明之組成物或經由稀釋後來作為拋 光液可提供較高之移除速率，避免拋光盤面溫度過高，提 昇表面拋光品質，並且能保持晶圓中心與邊緣較為一致之 移除率。 雖然本發明已以實施例揭露如上，然其並非用以限定 本發明’任何熟習此技藝者，在不脫離本發明之精神和範 圍内’當可作些許之更動與潤飾，因此本發明之保護範圍 當視後附之申請專利範圍所界定者為準。 【圖式簡單說明】 無 【主要元件符號說明】 無In short, the composition of the present invention or the dilution as a polishing liquid can provide a higher removal rate, avoid excessive polishing surface temperature, improve surface polishing quality, and maintain the center and edge of the wafer more consistently. Removal rate. While the present invention has been disclosed in the above embodiments, it is not intended to limit the invention, and the invention may be modified and modified as it is within the spirit and scope of the invention. The scope is subject to the definition of the scope of the patent application attached. [Simple diagram description] None [Main component symbol description] None