201035618 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種薄膜電晶體陣列電路基板缺陷修補之即時檢 測方法特別是一種以修補剛後的阻抗值變化，隨即可判定缺陷修 補成功與否的即時檢測方法。201035618 VI. Description of the Invention: [Technical Field] The present invention relates to an instant detection method for defect repair of a thin film transistor array circuit substrate, in particular, a change in impedance value immediately after repair, and then it is determined whether the defect repair succeeds or not. Instant detection method.
【先前技術】 隨著平面顯示器製造技術的提昇，提供大尺寸、高解晰度、高 冗度的平面顯示器已非難事，而在生產製造的過程中，除了提高產 -的品質及較佳的規格外’良好的品管亦是提高整體製程良率的重 要環節。 〇 以常見的缚膜電晶體液晶平面顯示器(TFT-LCD)為例，主要的 製程包含三部分：薄膜電晶體陣列電路工程(TFTarray engineering)、面板工程_ engineering)、以及模組工程⑽純 en—) ’其中薄膜f晶體_電駄程是在_基板上形成矩 陣狀排列的薄膜電晶體電路圖案，藉由傳送電子信號開啓或關閉薄 膜電晶體’以便驅動液晶分子的旋轉，來控制光線的通過率。 然而’在薄膜電晶體_圖案的製作過程中，可能會因為光阻 剝除不全、異物殘留而造成薄膜電晶體電路圖案内的線路短路、斷 4 201035618 成的面板在經測試時出現亮點、暗點以及亮線， 此種重大瑕_絲響舰電晶體液晶平_示糾製程良率，因 Ο ==’會先經由電性檢測的方式找出缺陷，判斷缺陷的 ==補。然而，目前的製程僅能在面板工程組裝彩色滤 先片後U顯賴以及背光點亮後，找得知缺岐否成功修 復而自修復到檢查修復是否成功，可能已經耗費多個工作時日， 因此’如何即時得知薄膜電晶體電路圖案的缺陷修復成功鱼否，減 少報廢損失時的時間落差，為現有製程技術急欲突破的瓶頸。 【發明内容】 β本發明之—目的為解決薄膜電晶體_電路缺陷修補的時效問 題’以便在最短的日摘内確認缺陷修補的成效。 為達上述目的，本發明提供一種薄臈電晶體陣列電路缺陷修補 之即時檢财法’其包細下步驟：首先提供—_基板，其包含 一設於顯示區内之薄臈電晶體陣列電路(TFTarray)以及一設於非顯 示區之電性檢測圖樣(reliabilitymeasuringpat_)，其中薄膜電晶體 陣列電路内至少有一缺陷，而電性檢測圖樣包含一第一結構以及一 -第了結構，且第一結構係與第二結構絕緣，接著進行一第一阻抗檢 測製程，檢測電性檢測圖樣中第一結構與第二結構間之一修補前阻 抗值，然後再同時對薄膜電晶體陣列電路的缺陷以及電性檢測圖樣 進行-雷#修補製程，形成—第_修補線路以修復祕，同時形成 201035618 一第二修補線路電連接第一結構以及第二結構，接著進行一 抗檢測製程’檢測電性檢麵樣中第—結構 '一阻 後阻抗值。 、弟—結構間之-修補 本發明的薄職晶體陣列電路缺陷修補之即時檢測 夠即時監控成功薄膜電晶體電路圖案的缺陷修復，且能達古犯 點、零暗點的高規格並成功提昇良率。 零儿 Ο 【實施方式】 〜在說明書及後續的申請專利範圍當中使用了某些詞彙來指稱特 疋的兀件。所屬領域中具有通常知識者應可理解，製造商可能會用 不同的名詞來稱呼同樣的元件。本說明書及後續的申請專利範圍並 不以名稱的差異來作為區別元件的方式，而是以元件在功能上的差 〇異來^為區別的基準。在通篇說明書及後續的請求項當中所提及的 包含」係為一開放式的用語，故應解釋成「包含但不限定於」。此 外，「電性連接」-詞在此係包含任何直接及間接的電氣連接手段。 =此，若文中描述-第—裝置電性連接於—第二裝置，則代表該第 一裝置可直接連接_第二裝置，或透過其他裝置錢接手段間接 地連接至該第二裝置。 晴參考第1圖至第1〇圖。第丨圖至第1G圖係依據本發明之一 較佳實施例麟示之—触電晶辦舰路缺陷修補之即時檢測方 6 201035618 法的不意圖。如第i圖所示，首先提供一薄膜電晶體陣列電路基板 10,薄膜電晶體陣列電路基板1G上的各種元件係形成於一透明基板 12上。賴《财舰路基板10狀義有—顯賴14以及一非 顯示區’顯示區14内設有-薄膜電晶體陣列電路15，係包含由 複數條掃描線18以及複數條訊號線20交又設置定義出的複數個書 素區域22，其中，各晝素區域22内設有—儲存電容雜。卿 capacitanee丨ine，csline)24 ’沿著掃树18的方向橫跨各晝素區域 0 22,且儲存電容線24係由訊號線况下方穿過。於本較佳實施例中， 掃描㈣與儲存電容線24係由同一製程同時形成，之後，再由一絕 緣層(圖未示)覆蓋於掃描線18及儲存電容線24上，接著在掃描線 18與訊號線2〇交又的區域分別形成—圖案化之半導體圖案％，並 於各晝素區域22内形成畫素電極28，且晝素電極28係重疊於儲存 ^線24上。另外，各晝素區域22内設有—薄膜電晶體％，係由 /、訊號線20同時形成的源極32、祕％以及半導體_ %共同 〇組成’且薄膜電晶體30的沒極34係利用至少一接觸電極㈣福 via ’圖未示)電連接上方的晝素電極28。 翻電晶體陣列電路基板1〇的非顯示區16内則設置了複數個 電性檢測_ 36、72、86、12G、144，各電性檢測_至少對應一 種缺陷修_結構，當薄難晶mm路基板w在製針發現有 —缺陷需要修補時，依該缺關_先選擇缺關修補方糾及對 ^亥缺陷的電性檢測圖樣，以便進行本發明的薄膜電晶體陣列電路 、陷修補之即時檢測方法，以τ將舉數個缺陷及其對應之電性檢測 7 201035618 圖樣為實施例’說明本發明_電晶體_電路缺祕補之即時檢 測方法。 請參考第1圖至第2圖，其中第2a圖係繪示設於非顯示區16 之-第-電性檢_樣36,第2b圖為第2a圖中沿A_A，的剖面示意 圖。在製作顯碰14内晝素區域22各元件的同時，亦使用同一製 程製作第-電性檢測圖樣36内的各個元件，原則上，第—電性檢測 圖樣36的元件規格、相對位置皆比照顯示區14内構成晝素區域22 的薄膜電晶體_電路15 ^如第2a圖及第2b騎示，第—電性檢 測圖樣36包含-第—結構38、—第二結構如以及—虛設電晶體双 42。虛設^晶體42係設於第一結構38與第二結構4〇之間，其包含 -虛設掃描線44、-虛設絕緣細未示)覆蓋虛設掃描線44上、— Ο[Prior Art] With the improvement of the manufacturing technology of flat panel display, it is not difficult to provide a large-size, high-resolution, high-reliability flat-panel display, and in addition to improving the quality of production and the better specifications in the manufacturing process. 'Good quality control is also an important part of improving overall process yield. 〇 Taking the common closed-film transistor liquid crystal flat panel display (TFT-LCD) as an example, the main process consists of three parts: TFTarray engineering, panel engineering (engineering), and module engineering (10) pure en —) 'The film f crystal_electric process is a thin film transistor circuit pattern formed in a matrix on the substrate, and the film transistor is turned on or off by transmitting an electronic signal to drive the rotation of the liquid crystal molecules to control the light. Passing rate. However, in the process of fabricating the thin film transistor, the short circuit and dark spots may appear in the panel of the thin film transistor circuit pattern due to incomplete photoresist stripping and foreign matter residue. And the bright line, this kind of major 瑕 _ silky ship transistor LCD flat _ shows the correction process yield, because Ο == ' will first find the defect through the electrical detection method, determine the defect == complement. However, the current process can only be used after assembling the color filter on the panel project, and after the backlight is lit, it is possible to find out whether the defect is successfully repaired and the self-repair to check whether the repair is successful or not. Therefore, 'how to know the defect of the thin film transistor circuit pattern to repair the fish successfully, reduce the time gap when the loss of the scrap, is the bottleneck of the current process technology. SUMMARY OF THE INVENTION [The present invention] is directed to solving the aging problem of thin film transistor_circuit defect repair' to confirm the effectiveness of defect repair in the shortest day pick. In order to achieve the above object, the present invention provides an instant verification method for defect repair of a thin tantalum transistor array circuit. The steps of the package are as follows: firstly, a substrate is provided, which comprises a thin germanium transistor array circuit disposed in the display region. (TFTarray) and a reliability detection pattern (reservabilitymeasuringpat_) disposed in the non-display area, wherein the thin film transistor array circuit has at least one defect, and the electrical detection pattern comprises a first structure and a first structure, and the first The structure is insulated from the second structure, and then a first impedance detecting process is performed to detect a pre-repair impedance value between the first structure and the second structure in the electrical detection pattern, and then simultaneously defecting the thin film transistor array circuit and The electrical detection pattern is carried out-Ray #repair process, forming - the first repair line to repair the secret, and at the same time forming 201035618 a second repair line electrically connected to the first structure and the second structure, and then the primary resistance detection process 'detection electrical inspection The first-structure's resistance value after the resistance. , brother-structure--repairing the short-time crystal array circuit defect repair of the present invention, the instant detection is sufficient to immediately monitor the defect repair of the successful film transistor circuit pattern, and can reach the high specification of the ancient criminal point and zero dark point and successfully improve Yield.零儿 Ο [Embodiment] ~ Certain terms are used in the specification and subsequent patent applications to refer to special transcripts. Those of ordinary skill in the art should understand that a manufacturer may refer to the same component by a different noun. The scope of this specification and the subsequent patent application do not distinguish the components by the difference of the names, but the differences in the functional differences of the components. The inclusions mentioned in the entire specification and subsequent claims are an open term and should be interpreted as "including but not limited to". In addition, the term "electrical connection" - the term includes any direct and indirect electrical connection means. If this is the case, the device described above is electrically connected to the second device, which means that the first device can be directly connected to the second device or indirectly connected to the second device via other means. Refer to Figure 1 to Figure 1 for details. The first to the first embodiment of the present invention is based on a preferred embodiment of the present invention. As shown in Fig. i, a thin film transistor array circuit substrate 10 is first provided, and various elements on the thin film transistor array circuit substrate 1G are formed on a transparent substrate 12. The thin film transistor array circuit 15 is provided in the display area 14 of the financial circuit board substrate 10, and the display area 14 includes a plurality of scanning lines 18 and a plurality of signal lines 20 A plurality of defined pixel regions 22 are defined, wherein each of the pixel regions 22 is provided with a storage capacitor. The capacitanee 丨ine, csline) 24 ′ traverses the respective pixel regions 0 22 in the direction of the sweeping tree 18, and the storage capacitor line 24 passes under the signal line. In the preferred embodiment, the scan (4) and the storage capacitor line 24 are simultaneously formed by the same process, and then covered by an insulating layer (not shown) on the scan line 18 and the storage capacitor line 24, followed by the scan line. A region of the signal line 2 intersecting with the signal line 2 forms a patterned semiconductor pattern %, and a pixel electrode 28 is formed in each of the pixel regions 22, and the pixel electrode 28 is superposed on the memory line 24. In addition, a thin film transistor % is provided in each of the halogen regions 22, and is composed of a source 32, a %, and a semiconductor _% formed by the / signal line 20, and a dies 34 of the thin film transistor 30. The upper halogen electrode 28 is electrically connected by at least one contact electrode (four) Fuvia's not shown. A plurality of electrical detections _ 36, 72, 86, 12G, and 144 are disposed in the non-display area 16 of the flip-flop array circuit substrate 1 , and each of the electrical detections _ at least one type of defect repair _ structure The mm road substrate w is found to be defective when the needle is formed, and according to the defect _ first select the defect repairing party to correct the electrical detection pattern of the hai defect, so as to perform the thin film transistor array circuit of the present invention. The instant detection method of repairing, taking τ as a number of defects and corresponding electrical detection 7 201035618 as an example to illustrate the present invention _ transistor_circuit lacking the secret to the instant detection method. Please refer to Fig. 1 to Fig. 2, wherein Fig. 2a is a cross-sectional view of the non-display area 16 and a second cross-sectional view taken along line A_A of Fig. 2a. While the components of the touch panel 14 are formed, the components in the first electrical detection pattern 36 are also formed by the same process. In principle, the component specifications and relative positions of the first electrical detection pattern 36 are compared. The thin film transistor_circuit 15 constituting the halogen region 22 in the display area 14 is shown in Figures 2a and 2b, and the first electrical detection pattern 36 includes a - structure 38, a second structure, and a dummy Crystal double 42. The dummy crystal 42 is disposed between the first structure 38 and the second structure 4, and includes a dummy scan line 44, a dummy insulating thin line not shown, covering the dummy scan line 44, and
虛設半導體®案48設於虛魏緣層上、-纽峨線％以及與虛 設訊號線50同時形成之—虛設源極52及—虛設汲極％。另外，— 第-結構38與第二結構4G内各包含—檢測用掃描線％％、絕緣 層46以及-檢測用透明電極6〇、62依序設置於透明基板12上，其 中檢測用掃描線56、58與設於顯示區14内的掃描線Μ具有相同的 線寬。此外，第-電性檢測圖樣36内的第—結構犯與第二結_ 間並未設置電性連接的線路，即第—結構38與第二結構則系彼此 電性絕緣，另外，如第2a_示，第一結構38内祝件結 二結構40 _元件結鏡像對稱，硫咖掃描線％、 點之間的間賴15G微米（㈣，此外，第—結構38與第二結構4〇 的檢測用透糧6〇、62係做為電性檢測時的接觸替，如第2b圖 8 201035618 所示，設於檢測用掃描線58上的絕緣層46曝露 線58的結構’使得形成於絕緣層46上方的檢測刀測用掃描 和曝露出來的檢_掃描線58直接接觸而電性連接㈣極62得以 Ο Ο 如第1圖所示，若薄膜電晶體陣列電路基板ig 電性檢測時發簡示區14 _薄膜電晶體陣列電路的 陷，例如發生於掃描線18上的—斷路64，因耐斷掃描㈣的 因此為修補斷路64，則開始本發明之薄膜電晶體陣列電路 細，補之即時檢測方法，請—併參考第職第3圖，第 ^發明之電晶體陣職路缺陷修補之即時檢測方法的流奸 :圖，第3圖所示’步驟觸係先提供一薄膜電晶體陣列電路基 例如第1圖所不之經電性檢測發現具有斷路64的薄膜電& :電:f 1〇。接著在步驟1料進行-修補前的第-阻_ ^第&圖所示，在檢測時，檢測用透明電極6G、62係做為電 生檢測時的接，利用一電性量測機台(圖未示)的一組接觸探針 直接石亚觸第-電性檢測圖樣36内做為接觸塾的檢測用透明電極 2以測知第-電性檢測圖樣％中第一結構％與第二結構 間的修補前阻抗值。 請一併參考第3 ®、第4a圖以及第4b圖，其中第&圖僅緣示 一臈電BB轉列電路15内需修補的部分晝素區域22。如第3圖所 、進行步驟1G4 ’彻—雷射修補製程，在斷路糾上形成一第一修 補線路68(如第4a圖所示）’例如—鶴金屬線路，並利用—雷射修補 201035618 機台(圖未示），其内含雷射產生 分別炫接第—修補線^請射產生具適當功率之雷射 斷路⑷同時，在第—8 ’=復射與掃描線上的 4〇間亦形成一第二修補線路’的第-、、、。構38和第二結構 路，同時雷射修補機台亦將第二 _不）’例如-鶴金屬線 掃描線56、58。然而，來出楚^ 、路7〇的兩端分別熔接檢測用The dummy semiconductor® case 48 is located on the virtual Wei edge layer, the -Nuwei line %, and the dummy signal line 50 formed simultaneously - the dummy source 52 and the dummy drain %. In addition, each of the first structure 38 and the second structure 4G includes - scanning scanning line %%, insulating layer 46, and - detecting transparent electrodes 6A, 62 sequentially disposed on the transparent substrate 12, wherein the detecting scanning line 56, 58 have the same line width as the scanning line 设 provided in the display area 14. In addition, the first structure in the first electrical detection pattern 36 is not electrically connected to the second junction, that is, the first structure 38 and the second structure are electrically insulated from each other, and 2a_ shows that the first structure 38 has a two-layer structure 40 _ element junction mirror symmetry, the sulfur scan line %, the distance between the points is 15G micron ((4), in addition, the first structure 38 and the second structure 4 〇 The detection of the permeable grain 6〇, 62 series as the contact for electrical detection, as shown in FIG. 2b FIG. 8 201035618, the structure of the insulating layer 46 exposed on the scanning line 58 for detecting the line 58 is formed in the insulation The scanning of the inspection blade above the layer 46 and the exposed inspection-scanning line 58 are in direct contact and electrically connected to the (four) pole 62. As shown in Fig. 1, if the thin film transistor array circuit substrate ig is electrically detected, The depression of the thin film transistor array circuit, for example, the open circuit 64 occurring on the scan line 18, and the repair open circuit 64 due to the intermittent scan (4), begins to thin the thin film transistor array circuit of the present invention. Instant detection method, please - and refer to the third figure, the first ^ The current detection method of the defect repair of the crystal circuit in the Ming Dynasty: Figure, Figure 3 shows the step-contact system to provide a thin-film transistor array circuit base, for example, the electrical detection of the first figure is found to have an open circuit. 64 film electric & : electric: f 1 〇. Then in the first step of the material - before the repair - the first resistance _ ^ the first & figure, in the detection, the detection transparent electrodes 6G, 62 as electricity In the connection of the raw detection, a set of contact probes of an electrical measuring machine (not shown) is directly used as the detecting transparent electrode 2 for the contact 塾 in the stone contact-electrical detecting pattern 36 to detect The pre-repair impedance value between the first structure % and the second structure in the first-electron detection pattern %. Please refer to the 3®, 4a, and 4b drawings together, where the & A part of the halogen region 22 to be repaired in the BB transfer circuit 15. As shown in Fig. 3, the step 1G4 'trict-laser repair process is performed, and a first repair line 68 is formed on the open circuit correction (as shown in Fig. 4a). 'For example - crane metal lines, and use - laser repair 201035618 machine (not shown), which contains laser generated points Do not dazzle the first - repair line ^ please shoot a laser with appropriate power (4) at the same time, at the 8th - 8 '= re-shooting and scanning line between 4 亦 also form a second patch line '--,,, The structure 38 and the second structural path, while the laser repairing machine will also be the second _ not) 'for example - the crane wire scan lines 56, 58. However, the two ends of the copper and the road 7 are respectively welded and tested.
亦可進行-雷射輔助化學氣倾^線路68的方式並不限於此， process)，先在_ ，几積製程(】繼assisted CVD 路64上方形成第—修補線路68 將糊填棒，並於斷 用先形成開口，曝露出部分用2地’第二修補線路7〇亦可以 鶴金屬的蝴账雜線56、5_面後，再沉積 如第3圖所示於該雷射 〇 106 測用透明電極60、62(如第4b ^ 口_(圖未不)的接觸探針66碰觸檢 36中第—結構38與第二結槿4Λ斤不）’以測知第一電性檢測圖樣 108 ’將修補後_膜電晶體陳，間的修補後阻抗值。之後進行步驟 台，進行—_洗淨製/，_"^路基板1G料域賴板的機 髮、灰塵等異物移除，綠保陣^路基板上的毛 電晶體陣列電路基板1G的清潔。 接著進行步驟110的第二阳 .測第一電性檢測圖樣3Γ中第:==前述之電性量測機 第〜構38與第二結構4〇間之—洗 201035618 淨後阻k值；紐如轉112所示，對修補前阻抗值、修補後阻 抗值以及洗淨後阻抗值，同時根據上述阻抗值的大小來判定經由雷 射修獅纽。鮮來說，本發明之賊電晶體_電路缺陷修補 之即雜财法是在晝倾域22及第—電性檢_樣36以相同雷 射修補製程形成第一修補線路68與第二修補線路7〇，並以第一電 性檢測圖樣36為雷射修補成效的檢測樣本，透過第一電性檢測圖樣 36在修補前、修補後以及洗淨後的阻抗值變化，可以合理判斷以同 Ο 一雷射修補製程修復的斷路64是否已經成功地修復。 當第一電性檢測圖樣36的阻抗值符合規格需求時，則可進行步 驟114，几成薄膜電晶體陣列電路基板的製作工程，將薄膜電晶 體陣列電路基板1〇送至下一階段的面板工程，進行後續的製程；然 而，若第一電性檢測圖樣36的阻抗值不符合規格需求，則再次重覆 步驟102至步驟11〇至阻抗值符格規格需求為止。The method of performing the laser-assisted chemical gas plumbing circuit 68 is not limited to this, and the first repair process is performed on the assissed CVD circuit 64, and the paste line is filled. The opening is formed first, and the exposed portion is covered with the two second 'repair lines 7', and the surface of the crane metal, 56, 5_, can be deposited on the laser 〇 106 as shown in FIG. The transparent electrodes 60 and 62 are measured (for example, the contact probe 66 of the 4th port _ (not shown) touches the first structure 38 and the second node 4 of the test 36) to detect the first electrical property. The detection pattern 108' will be repaired after the _membrane transistor is pressed, and the post-repair impedance value is performed. Then, the step table is performed, and the _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The cleaning of the matte array circuit board 1G on the green protective circuit substrate is removed. Then, the second electrical measurement of the first electrical detection pattern in step 110 is performed: === The aforementioned electrical measuring machine Between the first structure 38 and the second structure 4 - wash 201035618 net after resistance k value; New as shown in 112, the impedance value before repair, repaired impedance And the impedance value after washing, and according to the magnitude of the above-mentioned impedance value, it is determined that the lion's ray is added via the laser. In addition, the thief transistor _ circuit defect repairing method of the present invention is in the sloping field 22 and the first - The electrical test _ 36 forms the first repair line 68 and the second repair line 7 以 in the same laser repair process, and uses the first electrical detection pattern 36 as a detection sample for the laser repair effect, through the first electrical property. The change in the impedance value of the test pattern 36 before, after, and after the cleaning can be reasonably judged whether the open circuit 64 repaired by the same laser repair process has been successfully repaired. When the impedance value of the first electrical detection pattern 36 is When the requirements of the specification are met, step 114 may be performed to fabricate the thin film transistor array circuit substrate, and the thin film transistor array circuit substrate 1 is sent to the next stage panel project for subsequent processing; however, if If the impedance value of an electrical detection pattern 36 does not meet the specification requirements, then step 102 to step 11 are repeated again until the impedance value specification requirement is reached.
Q 本較佳實施例中設於非顯示區16的第一電性檢測圖樣36可用 於判定訊號線斷線後的修復情況，若斷線的缺陷是發生在儲存電容 線24時，則可利用本發明之一第二電性檢測圖樣72來判定的儲存 電容線的修復情況，請參考第i圖及第5圖，為簡化說明，與前述 相同之元件係以相同的元件符號標示。如第〗圖所示，第二電性檢 測圖樣72係設於非顯示區16，如第5圖所示，第二電性檢測圖樣 72係模擬相鄰兩個畫素區域22間與訊號線2〇交叉處儲存電容線μ 的結構’其中，第一結構74與第二結構76内係包含檢測用掃描線 21 201035618 56、^ :、檢夠用透明電極6〇、62、虛設儲存電容線78、79以及設 、、,；56 :存電谷線％上方之虛設晝素電極8〇、81，且檢測用掃描 線〜8和與其對應的檢測用透明電極60、62之間以及虛設儲存 ^線78、79和其對應的虛設晝素電極8〇、81之間另設有絕緣層(圖 二)/第一結構74與第二結構％間設有虛設半導體圖案82以及 虛=峨線84，而虛設儲存電容線％的線寬係與儲存電容線％的 :寬才同右儲存電容線24本身或附近的電路結構發現缺陷，例如 〇路’需要修補時，可同時在該缺陷以及第二電性檢酬樣72形成 路㉟後再依循第3 ®所*的即時檢測方法，並以電性量測 K圖未不)置測第二電性檢測圖樣η修補前後以及洗淨後的阻抗 值變化’來判定是否已成功修復儲存電容線24。 本㈣所述之即時檢測方法除了可以監控掃赠及儲存電容線 、修補，非顯賴16内另設有-第三電性檢_樣86，用於監控 〇 _ 32或沒極34的缺陷修補情形。請參考第ι圖及第6 圖。如第1圖所示，第三電性檢測圖樣86係設於非顯示區π内， 如第6圖所示’第三電性檢測圖樣86包含-第-結構88以及一第 88 9〇 Q 〜朗透明電極96、98以及—絕緣層設於檢湘訊號線 與檢測用透明電極％'98之間，且檢軸 露部分檢_訊號線92、94，此外檢_訊麟92、94的線寬 =晝素區域中的訊號線2〇等寬，且第一結構s8的檢測用訊號線 、第-結構9()的檢測用訊號線94之間的間距約為⑼微米。若 12 201035618 晝素區域22内的訊號綠 有需要修補的缺陷，例：、：32或汲極34在電性檢測時發現 圖樣％形祕·路，㈣電連^時在該缺陷以及第三電性檢測 極32或沒極34，同時=連接因該斷路而絕緣訊號線2〇、源 原本絕緣的第-結構88第圖樣86上的修補線路將 示的即時檢測方法，拍、 連接’然後再依循第3圖所 圖樣86修補1^概量測勤(®絲)制第三電性檢測 Ο 發生於wZl ^她_抗錢化，來狀❹6成功修復 生於«線2G、雜32歧極％ 陷。 本發明所騎時檢财法，並秘於制以雷射熔融或雷射輔 =化=相積的方式來形絲補線路，以修復發生於掃描線、儲 存電容線、峨線、馳歧極之斷路，㈣祕其他麵的缺陷 修補以及即時檢測。請參考第1圖、第7a圖、第7b圖以及第8圖， 其中第7a圖僅繪示薄膜電晶體陣列電路15内需修補的部分畫素區 ❹域22。若薄膜電晶體陣列電路基板1〇在電性檢測時，發現晝素區 域22内的儲存電容線24與訊號線^因異物掉落或其他原因而發生 短路138可利用5又於非顯示區μ之一第四檢測圖樣12〇來監控， 並依循第8圖所示之即時檢測方法進行修補。如第几圖所示，第四 檢測圖樣120包含一第一結構122以及一第二結構124，且第—結 構122與第二結構124係包含一虛設半導體圖案126、128、設於虛 設半導體圖案126、128上之虛設掃描線130、132以及檢測用透明 電極134、136 ’其中虛設半導體圖案126、128與虛設掃描線13〇、 132間設有一絕緣層（圖未示），虛設掃描線丨3〇、132與檢測用透明 13 201035618 電極m、136紗另—絕緣層(圖未示），且半導咖_、⑵ 的線寬略大於虛設掃描線13〇、132，此外，第四檢測圖樣i2〇中第 一結構122的虛設掃描線13(H系直接連接第二結構m的虛設掃描 線132，即第-結構122與第二結構124直接電連接。請參考第8 圖、第9a圖及第9b圖，第9a _會示薄膜電晶體陣列電路15内 需修補的部分晝素區域22。如第8圖所示，在步驟勘先提供具有 缺陷，例如短路之薄膜電晶體陣列電路基板1〇，接著進行步驟 〇 202之第-阻抗檢測製程’利用一電性量測機台(圖未示)的一組接觸 探針66直接碰觸第一電性檢測_2〇内做為接觸塾的檢測用透明 電極134、136，以測知第四電性檢測圖樣12〇中第一結構122與第 二結構124間的修補前阻抗值;依序進行步驟綱的雷射修補製程， 例如利用一雷射修補機台(圖未示），其内含雷射產生系統，用以產 生具適當功率之雷射於晝輕域22_斷造成短路138之異物的兩 側訊號線20，並形成—第—修爾路_，且在細檢麵樣12〇 〇形成-第二修補線路142，以相同之雷射切斷虛設掃描線削、出 之間的連結，使得第—結構122與第二結構以絕緣；然後進行步 驟206再-人利用電性量測機台(圖未示)的接觸探針％碰觸第四電 性檢測圖樣120内做為接觸墊的檢測用透明電極ΐ34、136，以測知 第哺生檢酬樣120中第一結構122與第二結構124間的修補後 阻抗值，並如步驟208所示，比對修補前阻抗值以及修補後阻抗值， 根據上述阻紐的大小來判定經由#祕補的成效 ’若修補後的阻 抗值已符合預定之規格，則如步驟21〇所示完成本次的雷射修補以 及雷射修補後的即時細I ;若細後阻抗值不符合預定之規格，則 14 201035618 驟驟208 ’再次修補前次未成功修複的短路 因短路陷的鱗138為止喝，在成功修補 因短路138仏成的缺陷後，紐斷開的電路結構 =接的電路時，則可進行第3圖所示之即時檢測製程，在斷開的 得以===電__電路結構兩端的輕，使得畫素區域22 〇 糾’除了以雷射㈣修麵之鱗與前述掃描線、訊號 線、儲存電容線，歧以雷射靖前述掃描線、峨線、儲存電容 線等金屬線等方法得以即時監控其成效外，本發明之方法亦適用於 監控以雷射剝除部分金屬圖案或是其他晝素區域的製程。請參考第 1圖、第10a圖、第1〇b圖以及第10c圖，其中第1〇a圖係為本發 明之一第五電性檢測圖樣144，且第10b圖係為第1〇a圖中B B，的 剖面示意圖。請-併參考第丨圖、第1()a圖以及第1〇b圖，第五電 〇性檢測圖樣144係設於薄膜電晶體陣列電路基板1〇的非顯示區 16，其包含-第-結構148以及—第二結構15()，其中第—結構148 與第二結構150内分別設有一第一絕緣層152(請見第勘圖）、虛設 掃描線154、156、一第二絕緣層158覆蓋虛設掃描線I%、156、一 檢測用透明電極160、162覆蓋第二絕緣層158以及一透明電極 300、302，其中第二絕緣層158具有複數個開口 163、164、165、 166、167、168，使得位於開口 163、164、166、167下方之虛設掃 描線154、156得以曝露並與透明電極3〇〇、302直接接觸，形成掃 描線154、156以及一透明電極3〇〇、302間的接觸電極(contact via)。 15 201035618 如第10a圖戶斤；,Λ 夫千说―，…在雷_除製糊始前，先以-電性量測機台(圖 觸塾的檢碰觸第五電性檢測 144内做為接 t 電和160、162 ’以測知第五電性檢測圖樣144中 電性圖7第二結構150間的修補前阻抗值；然後將設有第五 如以雷射¥ 144的細電晶體陣列電路基板以#射進行修複，例 Ο 第五雷^製朗時剝除畫素輯22 _部分畫钱極，以及剝 二弟五電性檢測圖樣144上開口 164處的部分透明電極·，如第 編=^trr,]機台(圖未示)的接觸探針66再次碰 佩制 秘60、162，以測量第五電性檢測圖樣144在雷射 ^ ^的修概阻抗值，並比祕補前阻抗值以及修補後阻抗 值以判定雷射|條聽的成效。 〜H本㈣之即時檢财祕在製作顯示區内薄膜電晶 p列電路的同時，在細示區域關時製作 Ο路結構近似的電性檢測圖樣，若薄膜電晶體陣列電路基板需要^ 時’視缺陷的種類選擇修補的方式以及對應該種缺陷的電性檢測圖 様、，祕補時’以相同的雷射修補製程，同時施行在顯示區内需要 修補的區域以及施行在非顯示區内的電性檢測圖樣，藉由比較進行 電性檢測圖樣在雷射修補製程前後的阻抗值，以判定顯示區内的修 補線路是域功；域—來，薄難—_魏基板躲陷修補 在薄膜電晶體陣列電路工程的階段即可確認是否已完全修復，且由 於非顯示區内設有多種對應不同缺陷的電性檢_樣，因此本發明 之即時檢測方法可赌各種翻缺_修纖效，減少時效性問題 16 201035618 而造成的報廢損失’透過本發明之即時檢測方法，可穩定薄膜電晶 體陣列電路㈣修觀功率，以改额顧晶體_電路工程』 最佳化模式。 以上所述僅為本發明之較佳實施例，凡依本發明申請專利範園 所做之解變化與修飾，皆觸本發明之涵蓋範圍。 Ο 【圖式簡單說明】 f a遍圖至第1〇圖係依據本發明之一較佳實施例所繪示之一薄膳 電曰曰體卩_路缺祕叙即_财的示意圖。 【主要元件符號說明】 10 〇 12 14 15 . 16 • 18 20 22 24 薄膜電晶體陣列電路基板 透明基板 顯示區 薄臈電晶體陣列電路 非顯示區 掃描線 訊號線 晝素區域 儲存電容線 17 201035618In the preferred embodiment, the first electrical detection pattern 36 disposed in the non-display area 16 can be used to determine the repair condition after the signal line is broken. If the defect of the disconnection occurs in the storage capacitor line 24, the available For the repair of the storage capacitor line determined by the second electrical detection pattern 72 of the present invention, please refer to the first and fifth figures. For the sake of simplicity, the same components as those described above are denoted by the same reference numerals. As shown in the figure, the second electrical detection pattern 72 is disposed in the non-display area 16, as shown in FIG. 5, and the second electrical detection pattern 72 simulates the adjacent two pixel areas 22 and the signal line. The structure of the capacitor line μ is stored at the intersection of the second portion. The first structure 74 and the second structure 76 include the detection scanning line 21 201035618 56, ^:, the transparent electrode 6〇, 62, and the dummy storage capacitor line. 78, 79 and set, ,,; 56: the dummy element electrodes 8〇, 81 above the storage valley line %, and the detection scanning lines ～8 and the corresponding detection transparent electrodes 60, 62 and dummy storage Between the lines 78, 79 and their corresponding dummy pixel electrodes 8 〇, 81, an insulating layer is further provided (Fig. 2) / a dummy semiconductor pattern 82 and a dummy = 峨 line are provided between the first structure 74 and the second structure % 84, and the line width of the dummy storage capacitor line is % of the storage capacitor line: the width is the same as the right storage capacitor line 24 itself or the circuit structure in the vicinity finds a defect, for example, when the road needs to be repaired, the defect and the The second electrical test sample 72 forms the way 35 and then follows the 3®* instant detection method. It is determined whether or not the storage capacitance line 24 has been successfully repaired by measuring the change in the impedance value before and after the second electrical detection pattern η is repaired by the electrical measurement. The instant detection method described in (4) can monitor the sweeping and storage capacitor lines and repairs, and the other is not included in the 16th - the third electrical inspection sample 86 is used to monitor the defects of 〇 _ 32 or immersed 34 Repair the situation. Please refer to the figure ι and figure 6. As shown in FIG. 1, the third electrical detection pattern 86 is disposed in the non-display area π. As shown in FIG. 6, the third electrical detection pattern 86 includes a --structure 88 and an 88 9-Q. ~ Lang transparent electrode 96, 98 and - insulation layer is set between the inspection Xiang signal line and the transparent electrode for detection % '98, and the inspection axis is partially detected _ signal line 92, 94, in addition to inspection _Xun Lin 92, 94 The line width = the signal line 2〇 in the halogen region is equal in width, and the pitch between the detection signal line of the first structure s8 and the detection signal line 94 of the first structure 9() is about (9) micrometers. If 12, 2010,518,18, the signal green in the halogen region 22 has defects that need to be repaired, for example: , 32 or bungee 34, when the electrical detection is found, the pattern % is secret, the road, and (4) the electrical connection is in the defect and the third Electrical detection pole 32 or immersion 34, at the same time = connection of the insulated signal line 2 因 due to the open circuit, the original repair method of the original structure of the first structure 88 of the insulation pattern 86 will show the instant detection method, shoot, connect 'then According to Fig. 3, the pattern 86 is repaired. The first electrical measurement test (® wire) system is used for the third electrical test. It occurs in wZl ^ she _ anti-money, and the ❹6 is successfully repaired and produced in «line 2G, miscellaneous 32 Extremely trapped. The invention adopts the method of checking the money when riding, and secretly uses the method of laser melting or laser auxiliary=chemical=phase product to shape the wire to repair the occurrence of the scanning line, the storage capacitor line, the twist line, and the distraction. Extremely broken, (4) other defects repair and immediate detection. Please refer to FIG. 1 , FIG. 7 a , FIG. 7 b and FIG. 8 , wherein FIG. 7 a only shows a part of the pixel region 22 to be repaired in the thin film transistor array circuit 15 . If the thin film transistor array circuit board 1 is electrically detected, it is found that the storage capacitor line 24 and the signal line in the halogen region 22 are short-circuited due to foreign matter falling or other reasons. 138 can be utilized in the non-display area μ. One of the fourth detection patterns is monitored and repaired according to the instant detection method shown in FIG. As shown in the figure, the fourth detecting pattern 120 includes a first structure 122 and a second structure 124, and the first structure 122 and the second structure 124 comprise a dummy semiconductor pattern 126, 128 and are disposed on the dummy semiconductor pattern. The dummy scan lines 130 and 132 on the 126 and 128 and the transparent electrodes 134 and 136 for detection are provided with an insulating layer (not shown) between the dummy semiconductor patterns 126 and 128 and the dummy scan lines 13A and 132, and dummy scan lines are provided. 3〇, 132 and transparent for inspection 13 201035618 Electrode m, 136 yarns another insulation layer (not shown), and the line width of the semi-conductive coffee _, (2) is slightly larger than the dummy scanning lines 13 〇, 132, in addition, the fourth detection The dummy scan line 13 of the first structure 122 in the pattern i2 ( (H is directly connected to the dummy scan line 132 of the second structure m, that is, the first structure 122 is directly electrically connected to the second structure 124. Please refer to FIG. 8 and 9a. FIG. 9B shows a portion of the halogen region 22 to be repaired in the thin film transistor array circuit 15. As shown in FIG. 8, a thin film transistor array circuit substrate having a defect, such as a short circuit, is provided in the step. 1〇, then proceed to step 〇20 The first-impedance detection process of 2 uses a set of contact probes 66 of an electrical measuring machine (not shown) to directly touch the first electrical detection _2, which is used as a transparent electrode for detecting 134 of the contact 塾. And 136, to detect the pre-repair impedance value between the first structure 122 and the second structure 124 in the fourth electrical detection pattern 12; sequentially performing the laser repair process of the step, for example, using a laser repairing machine (not shown), which comprises a laser generating system for generating a signal line 20 with appropriate power for the foreign matter on the side of the light domain 22_ which causes the short circuit 138 to break, and forms - the first - Shuer Road _ And forming a second repairing line 142 on the fine inspection surface 12, cutting the connection between the dummy scanning lines and the same by the same laser, so that the first structure 122 and the second structure are insulated; Step 206: The person touches the detecting transparent electrode ΐ34, 136 as the contact pad in the fourth electrical detecting pattern 120 by using the contact probe % of the electrical measuring machine (not shown) to detect the first feeding. The post-repair impedance value between the first structure 122 and the second structure 124 in the test sample 120 is as shown in step 208. Comparing the pre-repair impedance value and the post-repair impedance value, and determining the effectiveness of the #secret according to the size of the above-mentioned resistance button. If the repaired impedance value has met the predetermined specification, the completion is as shown in step 21〇. The laser repair and the immediate fine I after the laser repair; if the impedance value after the fine does not meet the predetermined specifications, then 14 201035618, step 208 'repair the short circuit that was not successfully repaired again, due to the short-circuited scale 138, After successfully repairing the defect caused by the short circuit 138, the circuit structure of the broken circuit = the circuit connected, the immediate detection process shown in Fig. 3 can be performed, and the circuit can be turned off === electric__ circuit structure The lightness at both ends makes the pixel area 22 〇 '' except for the laser (4) shaved scales and the aforementioned scan lines, signal lines, storage capacitor lines, and the laser, the aforementioned scan lines, 峨 lines, storage capacitor lines and other metals In addition to the ability to monitor the effectiveness of the line in a timely manner, the method of the present invention is also applicable to processes that monitor the removal of portions of metal patterns or other halogen regions by laser. Please refer to FIG. 1 , FIG. 10 a , FIG. 1 b and FIG. 10 c , wherein the first 〇a diagram is a fifth electrical detection pattern 144 of the present invention, and the 10th diagram is the first 〇a A schematic cross-sectional view of BB in the figure. Please refer to the first diagram, the first (a) diagram, and the first diagram, and the fifth electrical detection pattern 144 is disposed on the non-display area 16 of the thin film transistor array circuit board 1 a structure 148 and a second structure 15(), wherein the first structure 148 and the second structure 150 are respectively provided with a first insulating layer 152 (see the drawing), dummy scan lines 154, 156, and a second insulation. The layer 158 covers the dummy scan lines I%, 156, a detecting transparent electrode 160, 162 covering the second insulating layer 158 and a transparent electrode 300, 302, wherein the second insulating layer 158 has a plurality of openings 163, 164, 165, 166 167, 168, such that the dummy scan lines 154, 156 under the openings 163, 164, 166, 167 are exposed and directly in contact with the transparent electrodes 3, 302, forming scan lines 154, 156 and a transparent electrode 3 302 contact vias. 15 201035618 As in the 10th figure, the household is jin;, Λ 千 说 ― , , , , , , 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 在 除 除 除 除 除 除 除 除 除 除 除 除 除As the connection between the electric and 160, 162 ' to detect the fifth electrical detection pattern 144 in the electrical structure of the second structure 150 between the pre-repair impedance values; then will be set to the fifth as the laser ¥ 144 fine The transistor array circuit substrate is repaired by #射, for example, the fifth laser is stripped of the picture element 22 _ part of the money pole, and the part of the transparent electrode at the opening 164 of the second electrical detection pattern 144 ·, as in the first edit = ^trr, the contact probe 66 of the machine (not shown) again touches the secret 60, 162 to measure the repair impedance value of the fifth electrical detection pattern 144 at the laser ^ ^ And than the secret impedance value and the post-repair impedance value to determine the effectiveness of the laser | listening to the ~H (4) of the instant financial secret in the production of the display area of the film electro-optic p-column circuit, in the detailed area When the film is fabricated, the electrical detection pattern of the circuit structure is approximated. If the film of the thin film transistor array is required, the type of defect is selected to be repaired. For the electrical detection pattern of the defect, the same laser repair process is used for the same process, and the area to be repaired in the display area and the electrical detection pattern in the non-display area are performed by comparison. Conducting the impedance value of the electrical detection pattern before and after the laser repair process to determine that the repaired line in the display area is domain power; the domain-to, the thin-difficult--wei substrate is trapped in the phase of the thin film transistor array circuit engineering It can be confirmed whether it has been completely repaired, and since there are a plurality of electrical inspection samples corresponding to different defects in the non-display area, the instant detection method of the present invention can bet for various vacancies _ repairing the fiber effect and reducing the timeliness problem 16 201035618 The resulting waste loss 'through the instant detection method of the present invention, the thin film transistor array circuit (4) can be stabilized to improve the power to optimize the crystal_circuit engineering optimization mode. The above is only a preferred implementation of the present invention. For example, all the changes and modifications made by the patent application garden of the present invention are within the scope of the present invention. Ο [Simple diagram description] fa pass graph to the first graph system According to a preferred embodiment of the present invention, a schematic diagram of a thin electric appliance body 卩 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Thin film transistor array circuit board transparent substrate display area thin 臈 transistor array circuit non-display area scan line signal line 昼 区域 area storage capacitor line 17 201035618
26 半導體圖案 28 晝素電極 30 薄膜電晶體 32 源極 34 汲極 36 第一電性檢測圖樣 38、74、88、122、148 第一結構 40、76、90、124、150 第二結構 42 虛設電晶體 44、130、132 虛設掃描線 46 絕緣層 48、82、126、128 虛設半導體圖案 50、84、154、156 虛設訊號線 52 虛設源極 54 虛設汲極 56、58 檢測用掃描線 60、62、96、98、134、 136、160、162 檢測用透明電極 64 斷路 66 接觸探針 68、140 第一修補線路 70、142 第二修補線路 18 201035618 72 第二電性檢測圖樣 78、79 虛設儲存電容線 8〇、81 虛設晝素電極 86 第三電性檢測圖樣 92、94 檢測用訊號線 100、102、104、106、薄膜電晶體陣列電路缺陷修 108、110、112、114時檢測方法的實施步驟 >補之即 Ο 120 第四檢測圖樣 138 短路 第五電性檢測圖樣 第一絕緣層 第一絕緣層 開口 158 163、164、165、166、 167 ' 168 200、202、204、206、薄臈電晶體陣列電路缺陷修補之即 208、210 時檢測方法的實施步驟 300、302 透明電極 1926 semiconductor pattern 28 germanium electrode 30 thin film transistor 32 source 34 drain 36 first electrical detection pattern 38, 74, 88, 122, 148 first structure 40, 76, 90, 124, 150 second structure 42 dummy Transistor 44, 130, 132 dummy scan line 46 insulating layer 48, 82, 126, 128 dummy semiconductor pattern 50, 84, 154, 156 dummy signal line 52 dummy source 54 dummy drain 56, 58 detection scan line 60, 62, 96, 98, 134, 136, 160, 162 transparent electrode for detection 64 open circuit 66 contact probe 68, 140 first repair line 70, 142 second repair line 18 201035618 72 second electrical detection pattern 78, 79 dummy Storage capacitor line 8〇, 81 dummy element electrode 86 third electrical detection pattern 92, 94 detection signal line 100, 102, 104, 106, thin film transistor array circuit defect repair 108, 110, 112, 114 detection method Implementation step > Completion Ο 120 Fourth detection pattern 138 Short circuit Fifth electrical detection pattern First insulation layer First insulation layer opening 158 163, 164, 165, 166, 167 ' 168 200, 202, 204, 206 Thin Crystal array circuit defect repair is 208, 210 when the detection method is implemented 300, 302 transparent electrode 19