1344051 九、發明說明： 【發明所屬之技術領域】 本發明係關於一種液晶顯示器，尤指一種具有畫素修補架 構之液晶顯示器。 【先前技術】 在液晶顯示器(Liquid Crystal Display，LCD)的製造過程中，畫素缺 陷(pixel defects)的產生是不可避免的；一般的處理方式為進行修補， 但也因此增加了製造成本。而晝素缺陷區分成兩種，白缺陷(从扮仿 defects)又稱亮點和黑缺陷(dark defects)又稱暗點；其中亮點極易被眼睛 區分出來，因此，較佳的修補方式係將亮點修補成不易被眼睛所辨識 的暗點。 第1圖為常用於液晶顯示器10之亮點修補成暗點的方法；其中 畫素電極12a的一部份區域13與間極線14重叠，並於二者間形成一增 加電荷儲存能力之儲存電容（如區域13)。當畫素電極丨23與開關元^ 16接觸不良或開關元件16本身的故障將導致亮點的發生，故用雷射產 生一焊接點(welding p〇int) 2〇於閘極線14與畫素電極丨h之該部份區 域13間形成一短路，因而將該亮點修補成暗點。如美國專利6,882,3乃 (issued to Kim 0n April 19, 2005)揭露一晝素電極具有一修補部㈣也 _ber)與鄰近的_線重疊^此外，另—亮崎補成暗點的方法為將 畫素電極與贿(電容)線重疊，於二者_成—儲存電容。美國專利 6,855,955 ((issued to Jeon et al. (hereinafter Jeon) on February 15 2005)^ 電性連接—儲存電容導體，其中該儲存電容 導體具有一修補部與開極線重叠。故當亮點發生時，藉由該修補部 6 L - ^Klm或Jeon所揭露的修補部；其係與閉極線部分重邊； f生-儲存電容，如此將增加_線電荷貞載 號的延誤極線上的晝素數目很 線間知純 將是相當重要的課題。 ^(capaclt,ve load) 【發明内容】 本發提供了-種液晶顯示器架構，用以解決因傳統線路修補 ㈣容請—tive lQad)導致信號延誤問題；該^顯 不^3-畫素電極、-薄膜電晶體一閘極線、—第_輔助層 輔助層具有-第-連接部與—第二連接部；該第_連^部與 。電極$# ’該第二連接部與該閘極線重叠；而該獅層與該 素電極和該閘極線電性絕緣。 ^ 々本發明更提供了一種用於上述之液晶顯示器的缺陷修補方法；該 缺陷修，方法包含町步驟：使該畫素電極與闕麟晶體電性‘ 緣，再藉由該第一輔助層的該第一連接部與該第二連接 素電極與朗極線彼此導通。 ^ ^此外，更包含了一第二輔助層，其與該第一辅助層之該第—連接 部重疊，用以提高該第一連接部與該畫素電極連接的機率。 —因此，根據本發明液晶顯示器與其缺陷修補方法，畫素電極可藉 由，一輔助層連接閘極電極；故在不造成信號延誤的前提下，有效^ 將亮點轉換呈暗點β 【實施方式】 第2圖所示為根據本發明一實施例之液晶顯示器1〇〇之局部上視 圖。液晶顯示器1〇〇包含複數個畫素區域1〇2、複數個資料線1〇4、 複數個閘極線106、複數個儲存電容線丨〇7以及複數個薄膜電晶體 !〇8。其t，該些閘極線與該些錯存電容線ι〇7 虛線加以表示，且形成於-基板上(未顯示^ 複數個畫素區域102依序排列形成矩陣，且每—個 都包含-個晝素電極11〇和-個畫素修補架構ηι。此m料線 104错由位關-壯的婦舰電晶體⑽電 同 上的所有畫素電極⑽而閘極線伽亦藉由位於同 膜電晶體⑽電性連她合)其同-列上的所有畫素電極⑽。儲= 容線107係橫跨該些畫素區域102並與該畫素電極重叠，因而形^ 加該畫素電極與另—基板上之共用電極間的電荷儲 存(充電)此力(charge st_g capacity)。且該儲存電容線a?愈 極 ⑽、貧料線104電性絕緣。而薄膜電晶體1〇8係位於該資料線⑽和 補極線106交點附近；其具有一源極電極_、一沒極電極職以 及^極電極H)6a(其為閘極線⑽的—部份)。其中，該源極電極咖 係電性連接该資料線104，該沒極電極職係藉由一開口 1〇9電性連 接該畫素雜UG ;且雜極電極職與魏_極娜係部分重叠 於該:雜電極1。6。此外，源極電極無極電極並非_定的，*是依ς 經過薄膜電晶體的電流方向而定，是可交換使用的。 第3圖為根據第2圓Α-Α線之薄膜電晶體108剖面圖，其中該薄 膜電晶體108具有-閉極電極，如形成於基板U2上之問極線段版。 閘極絕緣層114覆蓋該閘極線段驗，半導體層U6形成於該絕緣層 114上，並部分重疊該閘極線段魏。該源極電極職與紐極電極 勵係形成練舰緣層上，且部分__電極職無汲極電極 l〇8b仅於該半導體層上。保護層118形成於該絕緣層IN上，覆蓋該 源極電極職與、汲極電極驅與部分的半導體層116，且該晝素電 極uo係形成與該保護層上，藉由一開口 1〇9電性連接該汲極電極 108b 〇 參考第3圖，該薄膜電晶體1〇8位於該源極電極1〇8a與該汲極電 極108b間之該半導體層116有一預定通道。當閘極線1〇6獲得一掃描 L號’並將6玄掃描信號傳輸至該閘極線段l〇6a，亦即該薄膜電晶體1〇8 的閘極電極，其用以控制電晶體1〇8之預定通道開關與否。故 當掃描信號提供至該閘極線段l〇6a，且該源極電極1〇8a由資料線1〇4 獲知一資料信號，則可藉由該通道將該資料信號傳送到該汲極電極 l〇8b。之後，藉由該汲極電極108b將該資料信號提供至該畫素電極 110 ’因此’该畫素電極11〇與另一基板上的共用電極(未顯示)間產生 -電位差，使得位於該畫素區域的液晶分子(未顯示)產生旋轉，而獲得 所預期的畫面。根據本發明中，該畫素區域指形成一個顏色的基本單 元，如紅、綠、藍。 —第4圖為根據第2圖B-B線之畫素修補架構lu剖面圖，在這個 實關中，畫素修嫌構⑴係包含―第___層12()與—第二輔助層 122用以修補一有缺陷的畫素區域。該第一輔助層12〇具有一連接12以 與閘極線106部分重叠’另一連接部隱與畫素電極11〇部分重叠； 其中該第-輔助層120係位於該閘極絕緣層114與保護層118之間，因 此與該閘極線106、該畫素電極UG電性絕緣。而該第二獅層122形 於基板112上’與該第一辅助層ι2〇的連接部丨咖重疊；換言之，其 亦與，素電極11〇部分重疊。此外，第二輔助層122被閘極絕緣層ιΐ4 所覆蓋，故無第-伽層的連接部麗倾晝素電極UG電性絕緣； 更進-步的說’該第二辅助層係作為—擔層(du_y⑽的之用，故其 與閘極線106互不連接，電性分離，也可以說該第二輔助層為一電性 孤島(electricallyinsulatedisland)。更者，在畫素區域無異常情況下，該 畫素修補架構ill與週遭，例如閘極線⑴6、f料線iG4、薄膜電晶體 108 a素電極11〇、儲存電容線1〇7等，皆無任何電性連結關係，包 含電流、電壓或電耦合等現象。 請參考第2圖〜第4圖，若任-個薄膜電晶體108於其通道上有-缺陷發生或遭到損壞，如第2圖所示之薄膜電晶體2〇8 ;因此，與該薄 膜電晶體208電性連接的畫素電極2丨〇即為一有缺陷之畫素電極，故 «玄里素電極210所呈現之畫素區域為一亮點，也可以說為白缺陷區域 (white defect) β而根據本發明之缺陷修補方法用以修補這樣的受損畫素 區域將於其後加以詳述- 在此實施例中，假設畫素電極210造成一亮點，而為了修補這白 缺陷，首先，將畫素電極210與該薄膜電晶體2〇8之源極電極/丨〇讣的 電性通道切斷，使得該畫素電極21〇於該源極電極1〇8b電性孤立。如 第5圖所不，該電性通道係藉由一雷射加以切斷汲極電極川訃的連接 部113與源極電極i〇Sa的連接部115，使得該畫素電極2丨〇與該薄膜 電晶體208電性分離。 請再次參閱第2圊〜第4圖，在上述之切斷步驟之後，於該畫素電 極210與閘極線1〇6間需重新建立一電路通道，用以將畫素電極2⑴ 修補成暗點，亦即黑缺陷(blackdefect)。而這個通道可藉由雷射於該書 素修補架構111形成兩個焊接點(weldingp〇ints，Q4a與124b)而達成， 如第6圖所示。其中焊接點124a係連接第一辅助層之連接點n〇a與閘 極線106，而焊接點124b係具有兩種連接方法：一為連接第一輔助層 之連接點120b與畫素電極210 ;另一為除前述之架構外，亦連接第二 輔助層122，其目的為使連接點i20b與畫素電極210間更易於電性連 接。當雷射照射而產生此二個焊接點(weldingp〇ims，124a與124b)後， 該晝素電極210便藉由該第一輔助層120與閘極線1〇6電性連接。因 此，该畫素電極210便由閘極線1〇6獲得一電位，則此受損之畫素區 域將顯示為一暗點而達到修補的效果。 第7A〜7D圖所顯示為第4圖之畫素修補架構丨丨i的製造方法剖面 圖.此外，亦參考第2圖與第3圖，同時描述該液晶顯示器丨〇〇形成 方法。 請參考第2、3與7A圖’一閘極線106、閘極線段i〇6a、一儲存 電谷線107以及一第二輔助層122形成於一基板1丨2上；該閘極線106、 該閘極線段106a、該儲存電容線1〇7以及該第二輔助層122係藉由至 J金屬層所構成’ 4金屬層可以為紹（aluminum, A1)、銅(copper, Cu)、絡(chromium，Cr)、銀(silver, Ag)、金(gold, Au)、紹（molybdenum， 1344051 M〇)或者任何其他金屬層、或者任何堆疊的金屬層，透過濺鈒技術 (sputtering technique)或亡芡迚的技術沉積於該基板上再藉由一第一光 罩圖案化而成(第一曝光顯影步驟）。 如第2'3與7B圖所示’一閘極絕緣層114形成於該基板1U上， 該閘極絕緣層114覆蓋上述之閘極線106、閘極線段1〇6a'儲存電容線 107以及第二輔助層122 ;該閘極絕緣層丨14係藉由至少一絕缘材料所 構成，例如矽氮化物（SiNx)、矽氧化物（Si〇x)、或者任何其他的 類似的材料、或者任何其他透明的材料、或者上述材料堆疊而形成該 閘極絕緣層。其後，一半體層116形成於閘極絕緣層114與閘極線段 106a上，該半導體層116係藉由一半導體材料沉積，例如非晶矽層 (amorphous siUC0n)，之後再藉由一第二光罩圖案化而成(第二曝光顯影 步驟）。 6月參考第2、3與7C圖，一資料線丨04 ' —連接該資料線丨之 源極電極108a、一汲極電極l〇8b以及一第一輔助層120係形成於該閘 極絕緣層114上；此外’位於閘極絕緣層1M上的該源極電極1〇以與 沒極電極l〇8b部分復蓋該半導體層。該資料線1〇4、該源極電極1〇8a、 該汲極電極108b以及該第一輔助層120係藉由至少一金屬層所構成， 例如鎂(magnesium，Mg)、鈣(calcium，Ca)、鋁（aluminum，A1)、銷 出31*11«11，83)、鋰(丨池丨11111，1^)、銀(8丨^1'，八8)、金仏〇1(1，八11)或者任何 其他金屬層、或者任何堆疊的金屬層，透過化學氣象沉積(CVD technique)、減鑛技術(sputtering technique)或者其他的技術沉積於該基 板112上，再藉由一第三光罩圖案化而成(第三曝光顯影步驟）。隨後， 一保護層118形成於該絕緣層114上，覆蓋該些資料線104、該源極電 極108a、該汲極電極i〇8b、部分的半導體層】16以及該第一輔助層丨2〇6 參考第2、3圓’該保護層118係藉由一第四光罩加以定義出—接 觸孔(開口）109(第四曝光顯影步驟），暴露出部分的汲極電極1〇8b。 由第2、3與7D圖可看出，一畫素電極110形成於該保護層U8 上，此外，該畫素電極1〗〇亦形成於該開口丨09内，電性連接汲極電極 11 (§) 1344051 108b。畫素電極储由至少—透明傳導材料沉積而成，例如銦錫氧化 物(indium tin oxide，IT0)、=C氧化物（indium 加 〇xide” IZ〇 )、銦 氧化物（indium oxide，10 )、錫氧化物(tin 〇xide，T〇)、鋅氧化物（ oxide，ZO)、鋁鋅氧化物(aluminum zinc似此，“ο)、或者任何其他 透明的傳導層、或者(上述)任何導體層堆叠而成，其後再藉由一第五光 罩圖案化而成(第五曝光顯影步驟）。1344051 IX. Description of the Invention: [Technical Field] The present invention relates to a liquid crystal display, and more particularly to a liquid crystal display having a pixel repairing structure. [Prior Art] In the manufacturing process of a liquid crystal display (LCD), the generation of pixel defects is unavoidable; the general processing method is repairing, but the manufacturing cost is also increased. The defect of the halogen is divided into two types. The white defect (from the defect) is also called the bright spot and the dark defect. The bright spot is easily distinguished by the eye. Therefore, the better repair method will be The highlights are patched into dark spots that are not easily recognized by the eyes. FIG. 1 is a conventional method for repairing a bright spot of a liquid crystal display 10 into a dark spot; wherein a portion of the region 13 of the pixel electrode 12a overlaps with the interpole line 14 and forms a storage capacitor for increasing charge storage capability therebetween. (eg area 13). When the pixel electrode 丨23 is in poor contact with the switching element 16 or the failure of the switching element 16 itself causes a bright spot to occur, a laser is used to generate a soldering point 2 to the gate line 14 and the pixel. A short circuit is formed between the partial regions 13 of the electrodes 丨h, thereby repairing the bright spots to dark spots. For example, U.S. Patent No. 6,882,3 (issued to Kim 0n April 19, 2005) discloses that a halogen electrode has a repairing portion (four) and _ber) overlapping with adjacent _ lines. In addition, another method for brightening dark spots In order to overlap the pixel electrode and the bribe (capacitor) line, the two are stored in a capacitor. US Patent 6,855,955 (issued to Jeon et al. (hereinafter Jeon) on February 15 2005) ^ Electrically connected - storage capacitor conductor, wherein the storage capacitor conductor has a repair portion overlapping the open line, so when a bright spot occurs, The repairing portion disclosed by the repairing portion 6 L - ^Klm or Jeon; the system is overlapped with the closed-line portion; the f-storage capacitor, which will increase the enthalpy of the delay line on the _ line charge 贞 carrier The number of lines is very important. ^(capaclt, ve load) [Invention] The present invention provides a liquid crystal display architecture to solve the problem caused by the traditional line repair (four) request - tive lQad a delay problem; the pixel is not a 3-pixel element, a thin film transistor, a gate line, a first auxiliary layer has a first-connecting portion and a second connecting portion; . The second connection portion of the electrode $#' overlaps the gate line; and the lion layer is electrically insulated from the element electrode and the gate line. ^ The present invention further provides a defect repairing method for the above liquid crystal display; the defect repairing method comprises the steps of: electrically connecting the pixel electrode to the unicorn crystal, and then using the first auxiliary layer The first connecting portion and the second connecting element electrode and the Langji line are electrically connected to each other. Further, a second auxiliary layer is further included, which overlaps with the first connection portion of the first auxiliary layer for increasing the probability of the first connection portion being connected to the pixel electrode. - Therefore, according to the liquid crystal display and the defect repairing method of the present invention, the pixel electrode can be connected to the gate electrode by an auxiliary layer; therefore, the bright spot is converted to a dark point β without causing signal delay. 2 is a partial top view of a liquid crystal display 1 according to an embodiment of the present invention. The liquid crystal display 1A includes a plurality of pixel regions 1〇2, a plurality of data lines 1〇4, a plurality of gate lines 106, a plurality of storage capacitor lines 丨〇7, and a plurality of thin film transistors 〇8. The gate lines are formed by dashed lines and the dashed lines of the capacitor lines ι〇7, and are formed on the substrate (the plurality of pixel regions 102 are not shown to be sequentially arranged to form a matrix, and each of them includes - a halogen electrode 11 〇 and - a pixel repair structure ηι. This m feed line 104 is wrong by the position of the strong - the mother ship transistor (10) is the same as all the pixel electrodes (10) and the gate line is also located by The same film transistor (10) is electrically connected to all of the pixel electrodes (10) on the same column. The storage line 107 is spanned across the pixel regions 102 and overlaps the pixel electrode, thereby charging (charge) the charge between the pixel electrode and the common electrode on the other substrate (charge st_g Capacity). And the storage capacitor line a? the cathode (10) and the lean line 104 are electrically insulated. The thin film transistor 1〇8 is located near the intersection of the data line (10) and the complementary line 106; it has a source electrode _, a immersed electrode and a gate electrode H) 6a (which is the gate line (10)- Part). Wherein, the source electrode is electrically connected to the data line 104, and the electrode of the electrodeless electrode is electrically connected to the pixel UG by an opening 1〇9; and the portion of the heteropolar electrode and the part of the Wei_Ana system Overlapping this: the impurity electrode 1. 6. In addition, the source electrode electrodeless electrode is not fixed, and * is dependent on the current direction of the thin film transistor and is exchangeable. Fig. 3 is a cross-sectional view of a thin film transistor 108 according to a second circular Α-Α line, wherein the thin film transistor 108 has a --electrode electrode, such as a thin-line segment formed on the substrate U2. The gate insulating layer 114 covers the gate line segment, and the semiconductor layer U6 is formed on the insulating layer 114 and partially overlaps the gate line segment. The source electrode and the neopolar electrode are formed on the edge layer of the training ship, and part of the __ electrode has no gate electrode l〇8b only on the semiconductor layer. The protective layer 118 is formed on the insulating layer IN, covering the source electrode, the drain electrode and the portion of the semiconductor layer 116, and the germanium electrode uo is formed on the protective layer by an opening 1〇 9 is electrically connected to the drain electrode 108b. Referring to FIG. 3, the thin film transistor 1A8 has a predetermined channel between the source electrode 1A8a and the gate electrode 108b. When the gate line 1〇6 obtains a scan L number ' and transmits a 6-axis scan signal to the gate line segment l〇6a, that is, the gate electrode of the thin film transistor 1〇8, which is used to control the transistor 1 〇8's predetermined channel switch or not. Therefore, when the scan signal is supplied to the gate line segment 16a, and the source electrode 1〇8a is informed by the data line 1〇4, the data signal can be transmitted to the gate electrode 1 through the channel. 〇 8b. Thereafter, the data signal is supplied to the pixel electrode 110 by the drain electrode 108b. Therefore, a potential difference is generated between the pixel electrode 11A and a common electrode (not shown) on the other substrate, so that the picture is located. The liquid crystal molecules (not shown) of the prime regions generate rotation to obtain the desired picture. According to the present invention, the pixel area refers to a basic unit forming a color such as red, green, and blue. - Figure 4 is a cross-sectional view of the pixel repair architecture according to Figure BB of Figure 2, in which the pixel structure (1) contains "the ___ layer 12 () and the second auxiliary layer 122 To repair a defective pixel area. The first auxiliary layer 12 has a connection 12 to partially overlap the gate line 106. The other connection portion is partially overlapped with the pixel electrode 11A. The first auxiliary layer 120 is located on the gate insulating layer 114. The protective layer 118 is electrically insulated from the gate line 106 and the pixel electrode UG. The second lion layer 122 is formed on the substrate 112 and overlaps with the first auxiliary layer ι2 ;; in other words, it also partially overlaps with the sputum electrode 11 。. In addition, the second auxiliary layer 122 is covered by the gate insulating layer ι 4, so that the connection portion without the first gamma layer is electrically insulated from the ruthenium electrode UG; further, the second auxiliary layer is used as The layer (du_y(10) is used, so it is not connected to the gate line 106, and is electrically separated. It can also be said that the second auxiliary layer is an electrically isolated island. Moreover, there is no abnormality in the pixel area. Next, the pixel repair structure ill and surrounding, such as the gate line (1) 6, the f-line iG4, the thin-film transistor 108 a-electrode 11 〇, the storage capacitor line 1 〇 7, etc., do not have any electrical connection relationship, including current, Voltage or electrical coupling, etc. Please refer to Fig. 2 to Fig. 4, if any thin film transistor 108 has a defect on its channel or is damaged, such as the thin film transistor 2 shown in Fig. 2 Therefore, the pixel electrode 2 electrically connected to the thin film transistor 208 is a defective pixel electrode, so the pixel region represented by the Xuan Lisu electrode 210 is a bright spot, and it can be said that For the white defect β, the defect repair method according to the present invention is used. The repair of such damaged pixel regions will be described later in detail - in this embodiment, it is assumed that the pixel electrode 210 causes a bright spot, and in order to repair the white defect, first, the pixel electrode 210 and the thin film are electrically charged. The electrical path of the source electrode/丨〇讣 of the crystal 2〇8 is cut off, so that the pixel electrode 21 is electrically isolated from the source electrode 1〇8b. As shown in FIG. 5, the electrical channel system is The connection portion 115 of the drain electrode and the source electrode i〇Sa is cut by a laser to electrically separate the pixel electrode 2 from the thin film transistor 208. Please refer again. 2nd to 4th, after the cutting step described above, a circuit channel needs to be newly established between the pixel electrode 210 and the gate line 1〇6 to repair the pixel electrode 2(1) into a dark spot. That is, a black defect, and this channel can be achieved by laser forming two solder joints (weldingp〇ints, Q4a and 124b) in the book repairing structure 111, as shown in Fig. 6. Where the solder joint 124a Connecting the connection point n〇a of the first auxiliary layer and the gate line 106, and the soldering point 124b has two types Connection method: one is connecting the connection point 120b of the first auxiliary layer and the pixel electrode 210; the other is in addition to the foregoing structure, the second auxiliary layer 122 is also connected, the purpose of which is to connect the connection point i20b and the pixel electrode 210 It is easier to electrically connect. When the two solder joints (weldingp〇ims, 124a and 124b) are generated by laser irradiation, the halogen electrode 210 is electrically connected to the gate line 1〇6 by the first auxiliary layer 120. Therefore, the pixel electrode 210 obtains a potential from the gate line 1〇6, and the damaged pixel area will appear as a dark spot to achieve the repair effect. 7A to 7D are cross-sectional views showing the manufacturing method of the pixel repairing structure 第i of Fig. 4. Further, referring to Figs. 2 and 3, a description will be given of the liquid crystal display 丨〇〇 forming method. Referring to FIGS. 2, 3 and 7A, a gate line 106, a gate line segment i〇6a, a storage valley line 107, and a second auxiliary layer 122 are formed on a substrate 1丨2; the gate line 106 The gate line segment 106a, the storage capacitor line 1〇7, and the second auxiliary layer 122 are formed of a metal layer to the J metal layer, which may be aluminum (a1), copper (copper, Cu), Chrome, Cr, silver, gold, Au, molybdenum, 1344051 M〇 or any other metal layer, or any stacked metal layer, through a sputtering technique The technique of ruining is deposited on the substrate and patterned by a first mask (first exposure and development step). As shown in FIGS. 2'3 and 7B, a gate insulating layer 114 is formed on the substrate 1U, and the gate insulating layer 114 covers the gate line 106, the gate line segment 1〇6a' storage capacitor line 107, and a second auxiliary layer 122; the gate insulating layer 14 is composed of at least one insulating material, such as germanium nitride (SiNx), germanium oxide (Si〇x), or any other similar material, or any Other transparent materials, or materials of the above, are stacked to form the gate insulating layer. Thereafter, a half of the bulk layer 116 is formed on the gate insulating layer 114 and the gate line segment 106a. The semiconductor layer 116 is deposited by a semiconductor material, such as an amorphous layer, followed by a second light. The cover is patterned (second exposure development step). Referring to Figures 2, 3 and 7C in June, a data line 丨04'-connecting the data line 源 source electrode 108a, a drain electrode 〇8b and a first auxiliary layer 120 are formed in the gate insulation On the layer 114; furthermore, the source electrode 1 on the gate insulating layer 1M partially covers the semiconductor layer with the electrodeless electrode 10b. The data line 1〇4, the source electrode 1〇8a, the drain electrode 108b, and the first auxiliary layer 120 are formed by at least one metal layer, such as magnesium (magnesium, Mg), calcium (calcium, Ca ), aluminum (aluminum, A1), sold out 31*11 «11, 83), lithium (丨池丨11111, 1^), silver (8丨^1', eight 8), gold 仏〇 1 (1, Eight 11) or any other metal layer, or any stacked metal layer, deposited on the substrate 112 by a CVD technique, a sputtering technique, or other technique, followed by a third light The cover is patterned (third exposure development step). Subsequently, a protective layer 118 is formed on the insulating layer 114 to cover the data lines 104, the source electrode 108a, the drain electrode i〇8b, a portion of the semiconductor layer 16 and the first auxiliary layer 丨2〇 6 Referring to the 2nd and 3rd circles, the protective layer 118 is defined by a fourth mask-contact hole (opening) 109 (fourth exposure developing step), and a part of the drain electrode 1〇8b is exposed. As can be seen from the second, third and seventh graphs, a pixel electrode 110 is formed on the protective layer U8. Further, the pixel electrode 1 is also formed in the opening 丨09, and is electrically connected to the drain electrode 11. (§) 1344051 108b. The pixel storage is deposited from at least a transparent conductive material, such as indium tin oxide (IT0), =C oxide (indium plus xide) IZ〇, indium oxide (10) Tin oxide (Tin), zinc oxide (NOx), aluminum zinc oxide (aluminum zinc like this, "ο), or any other transparent conductive layer, or any of the above (or any) conductor The layers are stacked and then patterned by a fifth mask (fifth exposure development step).
根據上述之液晶顯示H 100、畫素修補結構⑴以及薄膜電晶體 ⑽的形成方法可見，該些架構係藉由同—光罩之曝光顯影步驟(圖案 化)而成。舉例來說，第二辅助層122係與開極線1〇6同時形成於基板 112上’例如第-光罩、同一曝光顯影步驟。此外，第一輔助層⑼斑 資料線H)4、源極電極廳與汲極電極_ ,亦同時形成與問極絕緣層 上’例如’第三光罩、同-曝光顯影步驟等等。因此，在不需要增加 額外的光罩與定義的流程下，形成所要的畫素修補結構⑴。 此外如第4圖所示之畫素修補結構⑴，該第二輔助層的形 成，有利於連接部議與畫素電極UG於第6 _示之焊接點賜 接。因此，可任細形成第二個輔如22於該液晶 第8圖係根據本發明的另一實施例，顯示液晶顯示器的 _字指示了鮮2圓實施财有與相同 ===的請。除了第-個輔助層22G和第二個輔助層222形 210的下側而非畫素電極㈤，21〇的上側以外， 液b曰顯4 200幾乎是與第2圖之液晶顯示器丨⑻姻。換古之， 助^與該薄膜電晶體Μ·係_一晝素 重t此外，該第—個輔助層220有一與閘極_ 中該閘極線106係藉由薄膜電晶體1G8，·與 j=2K)電性齡。該第—個辅助層如更有—連接部雇與 4素電極U0, 210以及該第二個輔助層22 缺陷出現於畫素電極210時，雷射首先切斷該薄‘晶的= 12 CS) 1344051 電極108b與§亥畫素電極210間的電性路徑，因此使畫素電極21 〇能與 薄膜電晶體208在電性分離(孤立）。其次，藉由焊接該第一個輔助層 220的連接部220b與閘極線1〇6，與焊接第一個輔助層22〇的連接 部220a與畫素電極210及/或第二個輔助層222，將這個畫素電極 210與閘極線106電性連接。因此’此白缺陷將修補成黑缺陷。According to the above-described method of forming the liquid crystal display H 100, the pixel repairing structure (1), and the thin film transistor (10), the structures are formed by the exposure and development step (patterning) of the same mask. For example, the second auxiliary layer 122 is formed on the substrate 112 simultaneously with the open line 1〇6, such as a photomask, the same exposure development step. Further, the first auxiliary layer (9) spot data line H) 4, the source electrode pad and the drain electrode _ are also formed on the interposer insulating layer, e.g., the third photomask, the same-exposure developing step, and the like. Therefore, the desired pixel repair structure (1) is formed without the need to add additional masks and defined processes. Further, as shown in Fig. 4, the pixel repairing structure (1), the second auxiliary layer is formed to facilitate the connection between the connection portion and the pixel electrode UG at the solder joint of the sixth electrode. Therefore, it is possible to form a second auxiliary such as 22 in the liquid crystal. According to another embodiment of the present invention, the _ word of the liquid crystal display indicates that the fresh circle is the same as the same ===. Except for the lower side of the first auxiliary layer 22G and the second auxiliary layer 222 shape 210 instead of the pixel electrode (five), the upper side of the 21 〇, the liquid b 曰 4 200 is almost in harmony with the liquid crystal display (8) of FIG. . In other words, the auxiliary transistor 220 has a gate electrode _ the gate electrode 106 is formed by a thin film transistor 1G8, and j = 2K) Electrical age. When the first auxiliary layer is more than the connection portion and the four-electrode U0, 210 and the second auxiliary layer 22 are present on the pixel electrode 210, the laser first cuts the thin 'crystal' = 12 CS 1344051 The electrical path between the electrode 108b and the 画Huihua electrode 210, thus enabling the pixel electrode 21 to be electrically separated (isolated) from the thin film transistor 208. Next, by soldering the connection portion 220b of the first auxiliary layer 220 and the gate line 1〇6, and the connection portion 220a of the first auxiliary layer 22〇 to the pixel electrode 210 and/or the second auxiliary layer 222, the pixel electrode 210 is electrically connected to the gate line 106. Therefore, this white defect will be repaired into a black defect.
第9圖顯示為根據本發明之液晶顯示器之等效電路圖。如第9圖 所示，該薄膜電晶體108包含一形成於閘極電極i〇6a與源極電極1〇如 間之電容（capacitor, Cgs);於畫素電極11〇與一具有一共用電壓之共用 電極(未顯示)間有一液晶電容(liquid crystal capacitor，CLC)。當該薄膜電 晶體108打開時，由資料線i〇4所獲得的一電壓可被傳輸至畫素電極 U0，而後轉存於該液晶電容中。之後，該電壓將被用於液晶分子(未顯 不)上。此外，一儲存電容(storagecapacit〇rCst)形成於畫素電極與共用 電極間，用以增加液晶電容的儲存能力。Figure 9 is a diagram showing an equivalent circuit diagram of a liquid crystal display according to the present invention. As shown in FIG. 9, the thin film transistor 108 includes a capacitor (Cgs) formed between the gate electrode i〇6a and the source electrode 1; and the pixel electrode 11 has a common voltage There is a liquid crystal capacitor (CLC) between the common electrodes (not shown). When the thin film transistor 108 is turned on, a voltage obtained by the data line i 〇 4 can be transferred to the pixel electrode U0 and then transferred to the liquid crystal capacitor. This voltage will then be applied to the liquid crystal molecules (not shown). In addition, a storage capacitor (storagecapacit〇rCst) is formed between the pixel electrode and the common electrode to increase the storage capacity of the liquid crystal capacitor.
在第2圖與第8圓令所顯示的該些液晶顯示器1〇〇和2〇〇，其畫 素電極110,210與兩相鄰的閘極、線1〇6是不重叠的。此外，這兩個g -輔助層m和22〇皆與畫素電極11〇, 21〇和兩相鄰的問極線1〇6 電性絕緣。因此’如第9騎示，每—條閘極線1()6娜脫由畫素 ，極110, 210或者由畫素電極11()，21〇與任_連接部連結所產生的 電容負載，因此所發送的掃描信_將無延遲的問題。 本發明之技術崎及技娜點，雖僅已以―她佳實補揭露如 ，然其並義以限定本㈣，任域習此技藝者 ，在不脫離本發明 奋;,:〇和|&圍内，當可作各種之更動與潤飾 ，因此本發明之保護範圍 §視後附之申請專利範圍所界定者為準。 阳 (§) 【圖式簡單說明】 - 為讓本發明之上述和其他目的、特徵、和優點能更明顯易惶， 特舉—較佳實施例，並配合所附圖式，作詳細說明如下：·" ’ 苐1圖為*用於一液晶顯示器之亮點修補成暗點的方、去. 第2圖所示為根據本發明一實施例之液晶顯示器之局部上視圖， 第3圖為根據第2圖A-A線之薄膜電晶體剖面圖； 第4圖為根據第2圖B-B線之畫素修補架構剖面圖； • 第5〜6圖分別表示沿A-A線之薄膜電晶體與沿Β·Β線之查 補架構經由雷射修補後之示意圖； > 第7A〜7D圖係為第4圖之畫素修補架構的製造方法剖面圖. 第8圖為根據本發明的另一實施例之液晶顯示器的 圖；以及 n勺社現 第9圖為根據本發明之液晶顯示器之等效電路圖。In the liquid crystal displays 1 and 2 shown in Figs. 2 and 8 , the pixel electrodes 110, 210 and the adjacent gates and lines 1 〇 6 do not overlap. In addition, the two g-auxiliary layers m and 22 are electrically insulated from the pixel electrodes 11A, 21A and two adjacent interrogation lines 1〇6. Therefore, as shown in the ninth riding, each of the gate lines 1 () 6 Nat from the pixel, the pole 110, 210 or the capacitive load generated by the pixel electrode 11 (), 21 〇 and any _ connection Therefore, the scanned message sent will have no delay. The technique of the present invention is a singularity of the singularity and the singularity of the singularity of the singularity of the present invention, and it is only limited to the stipulations of the present invention. Within the scope of the invention, the scope of protection of the present invention is defined by the scope of the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS The above and other objects, features, and advantages of the present invention will become more apparent and obvious <RTIgt; :·" ' 苐 1 picture is * for the bright spot of a liquid crystal display patched to a dark point, go. Figure 2 is a partial top view of a liquid crystal display according to an embodiment of the present invention, Figure 3 is Fig. 4 is a sectional view of a thin film transistor according to the line AA of Fig. 2; Fig. 4 is a sectional view of a pixel repairing structure according to the line BB of Fig. 2; • Figs. 5 to 6 respectively show a thin film transistor along the line AA and along the Β· FIG. 8 is a cross-sectional view showing a manufacturing method of the pixel repairing structure of FIG. 4. FIG. 8 is another embodiment of the present invention. FIG. 9 is a diagram showing an equivalent circuit diagram of a liquid crystal display according to the present invention.
【主要元件符號說明】 10 液晶顯示器 資料線 16 薄膜電晶體 12a畫素電極 100，；200液晶顯示器 104資料線 106a閘極電極 102畫素區域 14 閘極線 2〇 焊接點 13 晝素電極之局部區域 102晝素區域 106掃描線 107儲存電容線 14 1344051 108,208 薄膜電晶體 109接觸窗 110,210 晝素電極 111 修補架構 113,115 連接部 120,220 第一輔助層 122,222 第二輔助層 108a源極電極 108b汲極電極 112 基板 114 絕緣層 120a，120b 連接部 124a,124b焊接點 220a，220b 連接部[Main component symbol description] 10 LCD display data line 16 thin film transistor 12a pixel electrode 100; 200 liquid crystal display 104 data line 106a gate electrode 102 pixel area 14 gate line 2〇 solder joint 13 local part of the pixel The region 102 pixel region 106 scan line 107 stores the capacitance line 14 1344051 108, 208 the thin film transistor 109 contact window 110, 210 the pixel electrode 111 repair structure 113, 115 the connection portion 120, 220 the first auxiliary layer 122, 222 the second auxiliary layer 108a the source electrode 108b the drain electrode 112 Substrate 114 insulating layer 120a, 120b connecting portion 124a, 124b solder joint 220a, 220b connecting portion
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