TW201035374A - Electroless tin or tin alloy plating solution and electronic element foemed with tin or tin alloy film by using electroless tin or tin alloy plating solution - Google Patents

Electroless tin or tin alloy plating solution and electronic element foemed with tin or tin alloy film by using electroless tin or tin alloy plating solution Download PDF

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TW201035374A
TW201035374A TW98144664A TW98144664A TW201035374A TW 201035374 A TW201035374 A TW 201035374A TW 98144664 A TW98144664 A TW 98144664A TW 98144664 A TW98144664 A TW 98144664A TW 201035374 A TW201035374 A TW 201035374A
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tin
copper
substituted
lower alkyl
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TW98144664A
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Chinese (zh)
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Hironori Kobayashi
Rui Nanba
Takashi Ouchi
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Nippon Mining Co
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/48Coating with alloys
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/52Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating using reducing agents for coating with metallic material not provided for in a single one of groups C23C18/32 - C23C18/50

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemically Coating (AREA)

Abstract

The present invention provides an electroless tin or tin alloy plating solution capable of forming a plating film having a good solder wettability and a reliable bonding ability with substrate and solder, and having less bleeding of the plating solution into the interface of cover-lay film or solder resist and copper or copper alloy. The electroless tin or tin alloy plating solution contains at least a tin salt, a complexing agent and an acid, and further contains an azole compound or an azine compound having at least three nitrogen atoms in the ring.

Description

201035374 六、發明說明: 【發明所屬之技術領域】 ^發月有關無電解錫或錫合金鑛覆液(本發明中係指 …、電解锡錢覆液或锡合金鍍覆液)及使用該鍍覆液形成錫 或錫合金被子構件。 【先前技術】 無電解錫 Ο 〇 复’係以往廣泛採用作為對柔性印刷基板 的錫鍵覆處理方法者 又’近年來, 由於無錯化(lead-free)的趨勢,而無電 解錫鑛覆程序正夸 又大豕瞻目作為剛性印刷基板的最終表面 處理方法。然而,卜& ττ201035374 VI. Description of the invention: [Technical field to which the invention pertains] ^About the electroless tin or tin alloy ore coating (in the present invention, ..., electrolytic tin coating or tin alloy plating solution) and using the plating The coating liquid forms a tin or tin alloy quilt member. [Prior Art] Electroless tin Ο 〇 ' ' is widely used as a tin bond treatment method for flexible printed substrates. In recent years, due to the trend of lead-free, electroless tin ore coating The program is an exaggerated and eye-catching approach to the final surface treatment of rigid printed substrates. However, Bu & ττ

、 無電解錫鍍覆液,一般而言,係由於pH - 此較兩溫(50°C以上)下將被鍍覆物浸潰於鍍 覆液中之故,/矛 仕系性印刷基板中則錫鍍覆液滲入銅與保護 膜(cover lay ;filin)的界面,在剛性印刷基板中則錫鐘覆 液參入銅與防銲層(solder-resist)的界面,而有引起防銲 層之浮起、或形成局部電池而使該部分之銅溶失等的問題。 為了解決此種問題,一般採用於經施加鑛覆之線路基 板上形成防銲'層之方法。然而.,由於此種方法亦對不需要 鍍覆處理之部分形成鍍覆被膜之故,製造成本增高而不合 適。又,專利文獻1中’揭示有藉由在形成防銲層之刖藉 由鉻酸鹽或有機化合物實施抗氧化處理以抑制鍍覆液滲入 銅一防銲層界面之方法,惟此種方法亦因步驟之增加’而有 製造成本上升之問題。 另一方面,一般周知,四°坐化合物或本并二°坐化5物 321709 3 201035374 係可用為防蝕劑或防鏽劑者。例如,專利文獻2、3中記載 有含有四嗤化合物或其鹽之金屬防餘劑或防鏽劑。再者, 專利文獻4至6中記載有含有四π坐化合物或苯并三σ坐化合 物之表面處理劑。此等表面處理劑,係因其目的為微蝕刻 之故,其中含有酸或氧化劑,而為使表面粗链面化者。此 等防蝕劑或表面處理劑雖然採用四唑化合物或苯并三唑化 合物,惟係顯示全然與錫或錫合金鍍覆液不相同的性質。 [先前技術文獻] [專利文獻] 專利文獻1 專利文獻2 專利文獻3 專利文獻4 專利文獻5 專利文獻6 日本特開2006-339216號公報 日本特許第2902281號公報 曰本特許第3141145號公報 日本特開2000-297387號公報 日本特開2002-194573號公報 日本特開2003-3283號公報 【發明内容】 [發明欲解決之課題] 本發明之目的在於提供一種鍍覆液滲入保護膜或防銲 層與銅或銅合金界面少,又,能形成銲劑可濕性良好且基 材與銲劑之間的接合可靠性亦良好的鍍覆被膜之無電解錫 或錫合金鍛覆液。 [解決課題之手段] 本發明人等,對上述課題專心研究之結果發現,如於 無電解錫及錫合金鍍覆液中含有特定的唑化合物(azol e 321709 201035374 compound)或D井化合物(azine compound) ’則可解決上述課 題之事實,終於完成本發明。 亦即,本發明係如下述者。 (1) 一種無電解錫或錫合金鍍覆液,其係至少含有錫 鹽、錯合劑、酸之無電解錫或錫合金鍍覆液,其中,含有 環内含有3個以上氮原子之峻化合物或哄化合物。 (2) 如前述(1)所記載之無電解錫或錫合金鍍覆液,其 中,前述無電解錫或錫合金鑛覆液含有下述一般式(A)或(B) 表示之三嗤化合物:, electroless tin plating solution, in general, due to pH - this is more than two temperatures (50 ° C or more) will be impregnated in the plating solution, / spears in the printed substrate Then, the tin plating solution penetrates into the interface between the copper and the protective film (cover lay; filin). In the rigid printed substrate, the tin-bell coating is incorporated into the interface between the copper and the solder-resist layer, and the solder resist layer is caused. The problem of floating or forming a local battery to dissolve the copper in the portion. In order to solve such a problem, a method of forming a solder resist layer on a wiring substrate to which a mineral coating is applied is generally employed. However, since this method also forms a plating film for a portion which does not require plating treatment, the manufacturing cost is increased and it is not suitable. Further, Patent Document 1 discloses a method for suppressing penetration of a plating solution into a copper-preservative layer by performing an oxidation treatment by a chromate or an organic compound in forming a solder resist layer, but this method is also There is a problem of rising manufacturing costs due to the increase in steps. On the other hand, it is generally known that a four-degree sitting compound or a two-dimensional sitting material 321709 3 201035374 can be used as an anti-corrosion agent or a rust preventive agent. For example, Patent Documents 2 and 3 disclose metal anti-surplus agents or rust inhibitors containing a tetraindole compound or a salt thereof. Further, Patent Documents 4 to 6 describe a surface treatment agent containing a tetraπ-seat compound or a benzotriazine sitting compound. These surface treatment agents are microetched for their purpose, and contain an acid or an oxidizing agent to thicken the surface. Although such a corrosion inhibitor or surface treatment agent employs a tetrazole compound or a benzotriazole compound, it exhibits a property different from that of a tin or tin alloy plating solution. [Prior Art Document] [Patent Document] Patent Document 1 Patent Document 2 Patent Document 3 Patent Document 4 Patent Document 5 Patent Document 6 Japanese Patent Laid-Open No. Hei. No. Hei. No. 2,092, 281, Japanese Patent No. 2,021, 281, Japanese Patent No. 3141145 [Problem to be Solved by the Invention] An object of the present invention is to provide a plating solution that penetrates a protective film or a solder resist layer. The interface with copper or copper alloy is small, and it is possible to form an electroless tin or tin alloy forging solution of a plating film which has good wettability of the solder and good joint reliability between the substrate and the flux. [Means for Solving the Problems] As a result of intensive research on the above-mentioned problems, the present inventors have found that, as in the electroless tin and tin alloy plating solution, a specific azole compound (azol e 321709 201035374 compound) or D well compound (azine) is contained. Compound) 'The fact that the above problems can be solved, finally completed the present invention. That is, the present invention is as follows. (1) An electroless tin or tin alloy plating solution containing at least a tin salt, a binder, an acid electroless tin or a tin alloy plating solution, wherein a compound containing three or more nitrogen atoms in the ring is contained Or bismuth compound. (2) The electroless tin or tin alloy plating solution according to the above (1), wherein the electroless tin or tin alloy ore coating liquid contains a triterpenoid compound represented by the following general formula (A) or (B) :

(匕至R3表示碳數10以下的烷基、烯基、炔基、芳基、 芳烧基、烧氧基,或者此等經鹵素原子、經基、叛基、胺 C) 基、低級烷基取代之胺基、羥基低級烷基取代之胺基、巯 基之任一者取代之基,或者胺基、低級烷基取代之胺基、 羥基低級烷基取代之胺基、巯基、羥基、羧基、或者鹵素 原子、氫原子之任一者)。 (3)如前述(1)所記載之無電解錫或錫合金鍍覆液,其 中,前述無電解錫或錫合金鍍覆液含有下述一般式(C)表示 之苯并三唑化合物: 5 321709 201035374(匕 to R3 represents an alkyl group, an alkenyl group, an alkynyl group, an aryl group, an arylalkyl group, an alkoxy group having a carbon number of 10 or less, or a halogen atom, a trans group, a thiol group, an amine C) group, or a lower alkane. a substituted amino group, a hydroxy lower alkyl-substituted amine group, a thiol-substituted group, or an amine group, a lower alkyl-substituted amine group, a hydroxy lower alkyl-substituted amine group, a thiol group, a hydroxyl group, a carboxyl group Or either a halogen atom or a hydrogen atom). (3) The electroless tin or tin alloy plating solution according to the above (1), wherein the electroless tin or tin alloy plating solution contains the benzotriazole compound represented by the following general formula (C): 321709 201035374

(R4至R8表示碳數10以下的烷基、烯基、炔基、芳基、 芳烷基、烷氧基,或者此等經IS素原子、羥基、羧基、胺 基、低級烷基取代之胺基、羥基低級烷基取代之胺基、酼 基之任一者取代之基,或者胺基、低級烷基取代之胺基、 羥基低級烷基取代之胺基、巯基、羥基、羧基,或者鹵素 原子、氫原子之任一者)。 (4)如前述(1)所記載之無電解錫或錫合金鍍覆液,其 中,前述無電解錫或錫合金鍍覆液含有下述一般式(D)表示 之四。坐化合物:(R4 to R8 represent an alkyl group, an alkenyl group, an alkynyl group, an aryl group, an aralkyl group, an alkoxy group having a carbon number of 10 or less, or substituted by an IS atom, a hydroxyl group, a carboxyl group, an amine group or a lower alkyl group; a group substituted with an amine group, a hydroxy lower alkyl-substituted amine group, or a fluorenyl group, or an amine group, a lower alkyl-substituted amine group, a hydroxy lower alkyl-substituted amine group, a thiol group, a hydroxyl group, a carboxyl group, or Any of a halogen atom or a hydrogen atom). (4) The electroless tin or tin alloy plating solution according to the above (1), wherein the electroless tin or tin alloy plating solution contains the fourth general formula (D). Sitting compound:

(Rg、Rio表示竣數10以下的烧基、烯基 '炔基、芳基、 芳烷基、烷氧基,或者此等經ifi素原子、羥基、羧基、胺 基、低級烷基取代之胺基、羥基低級烷基取代之胺基、毓 基之任一者取代之基,或者胺基、低級烷基取代之胺基、 羥基低級烷基取代之胺基、巯基、羥基、羧基,或者鹵素 原子、氫原子之任一者)。 (5)如前述(1)所記載之無電解錫或錫合金鍍覆液,其 6 321709 201035374 中,前述無電解錫或錫合金鍍覆液含有下述一般式(E)表示 之四唾化合物: (E) R12 Rll / \(Rg, Rio represents a decyl group of 10 or less, an alkenyl 'alkynyl group, an aryl group, an aralkyl group, an alkoxy group, or the like, or substituted by an ifi atom, a hydroxyl group, a carboxyl group, an amine group, or a lower alkyl group. a group substituted with an amine group, a hydroxy lower alkyl-substituted amine group, or a fluorenyl group, or an amine group, a lower alkyl-substituted amine group, a hydroxy lower alkyl-substituted amine group, a thiol group, a hydroxyl group, a carboxyl group, or Any of a halogen atom or a hydrogen atom). (5) The electroless tin or tin alloy plating solution according to the above (1), wherein the electroless tin or tin alloy plating solution contains the tetrasal compound represented by the following general formula (E) in 6 321 709 201035374 : (E) R12 Rll / \

(Rn、Ri2表示碳數10以下的烷基、烯基、炔基、芳基、 D芳烷基、烷氧基,或者此等經鹵素原子、羥基、羧基、胺 基、低級烧基取代之胺基、經基低級烧基取代之胺基、魏 基之任一者取代之基,或者胺基、低級烷基取代之胺基、 羥基低級烷基取代之胺基、巯基、羥基、羧基,或者鹵素 原子、氫原子之任一者,而Rl3表示單鍵,或者碳數10以 下的伸烷基、伸烯基、伸炔基、伸芳基、伸芳烷基,或者 此等經鹵素原子、羥基、羧基、胺基、巯基、偶氮基、硫 基、二硫基之任一者取代之基,或者偶氮基、硫基、二硫 ❹基的二元基之任一者。) (6)如前述(1)記載之無電解錫或錫合金鍍覆液,其 中,前述無電解錫或錫合金鍵覆液含有下述一般式(F)表示 之三畊化合物: (F)(Rn, Ri2 represents an alkyl group, an alkenyl group, an alkynyl group, an aryl group, a D aralkyl group, an alkoxy group having a carbon number of 10 or less, or is substituted by a halogen atom, a hydroxyl group, a carboxyl group, an amine group, or a lower alkyl group. An amine group, a group substituted with an amine group substituted with a lower alkyl group, or a group substituted with a thio group, or an amine group, a lower alkyl group-substituted amine group, a hydroxy lower alkyl group-substituted amine group, a thiol group, a hydroxyl group, a carboxyl group, Or a halogen atom or a hydrogen atom, and Rl3 represents a single bond, or an alkylene group having at least 10 carbon atoms, an alkenyl group, an alkynyl group, an aryl group, an aralkyl group, or a halogen atom. Any one of a hydroxyl group, a carboxyl group, an amine group, a fluorenyl group, an azo group, a thio group, a disulfide group, or a azo group, a thio group or a dithiol group. (6) The electroless tin or tin alloy plating solution according to the above (1), wherein the electroless tin or tin alloy key solution contains the three-till compound represented by the following general formula (F): (F)

1414

R15 (r14至r16表示碳數10以下的烷基、烯基、炔基、芳 7 321709 201035374 基、芳烷基、烷氧基,或者此等經ii素原子、羥基、羧基、 胺基、低級烷基取代之胺基、羥基低級烷基取代之胺基、 酼基之任一者取代之基,或者胺基、低級烷基取代之胺基、 羥基低級烷基取代之胺基、巯基、羥基、羧基,或者鹵素 原子、氫原子之任一者)。 (7) —種電子構件,其係於前述(1)至(6)中任一項之無 電解錫或錫合金鍍覆液中,浸潰表面具有銅或銅合金圖 案、及至少經形成於該銅或銅合金圖案上之樹脂組成物之 電子構件,而形成錫或錫合金被膜之電子構件,前述無電 解錫或錫合金鍍覆液滲入銅或銅合金與樹脂組成物界面之 深度為30//m以下者。 (8) 如前述(7)所記載之電子構件,其中,前述電子構 件係印刷線路基板。 (9) 如前述(7)所記載之電子構件,其中,前述電子構 件係TAB(Tape Aut⑽ated Bonding,捲帶式自動接合)薄 膜載體。 (10) 如前述(7)所記載之電子構件,其中,前述電子構 件係晶圓(wafer)基板。 [發明之效果] 本發明之無電解錫或錫合金鍍覆液,係當用於柔性基 板或剛性印刷基板的最終表面處理時,鍍覆液滲入保護膜 或防銲層與銅或銅合金界面少之故,可解決保護膜或防銲 層的浮起、及形成局部電池而使該部分的銅或銅合金溶失 等的問題。又,能形成銲劑可濕性良好且基材與銲劑之間 8 321709 201035374 的接合可靠性亦良好的鍍覆被膜。 【實施方式】 本發明之無電解錫鍍覆液、或錫合金鍍覆液,係於鍵 覆液中至少含有錫鹽、錯合劑、酸,並且含有環内含有氮 原子3個以上之唑化合物或畊化合物。 環内含有3個以上氮原子之唑化合物或π井化合物而 言’較佳為環内含有氮原子3個或4個之唑化合物或哄化 ❹合物,可列舉:三唑化合物、苯并三唑化合物、四唑化合 物、三畊化合物等,特佳為下述一般式(A)、(B)表示之三 。坐化合物、一般式(C)表示之苯并三唑化合物、一般式(1))、 (E)表示之四唑化合物、一般式(F)表示之三畊化合物。R15 (r14 to r16 represents an alkyl group, an alkenyl group, an alkynyl group, an aromatic 7 321709 201035374 group, an aralkyl group, an alkoxy group having a carbon number of 10 or less, or such a iodin atom, a hydroxyl group, a carboxyl group, an amine group, or a lower group. An alkyl-substituted amine group, a hydroxy lower alkyl-substituted amine group, a thiol-substituted group, or an amine group, a lower alkyl-substituted amine group, a hydroxy lower alkyl-substituted amine group, a fluorenyl group, a hydroxyl group , a carboxyl group, or any of a halogen atom or a hydrogen atom). (7) An electronic component in the electroless tin or tin alloy plating solution according to any one of (1) to (6) above, wherein the impregnated surface has a copper or copper alloy pattern, and is formed at least The electronic component of the resin composition on the copper or copper alloy pattern forms an electronic component of the tin or tin alloy coating, and the electroless tin or tin alloy plating solution penetrates into the interface of the copper or copper alloy and the resin composition to a depth of 30 //m or less. (8) The electronic component according to the above (7), wherein the electronic component is a printed circuit board. (9) The electronic component according to the above (7), wherein the electronic component is a TAB (Tape Aut (10) Bonded Bond) film carrier. (10) The electronic component according to the above (7), wherein the electronic component is a wafer substrate. [Effects of the Invention] The electroless tin or tin alloy plating solution of the present invention is used for the final surface treatment of a flexible substrate or a rigid printed substrate, and the plating solution penetrates into the protective film or the solder resist layer and the copper or copper alloy interface. In a few cases, the problem of floating of the protective film or the solder resist layer and formation of a local battery to dissolve the copper or copper alloy in the portion can be solved. Further, it is possible to form a plating film having a good wettability of the flux and a good bonding reliability between the substrate and the flux 8321709 201035374. [Embodiment] The electroless tin plating solution or the tin alloy plating solution of the present invention contains at least a tin salt, a coupling agent, and an acid in the key solution, and contains three or more azole compounds containing a nitrogen atom in the ring. Or cultivated compounds. In the case of an azole compound or a π well compound containing three or more nitrogen atoms in the ring, it is preferred that the ring contains a nitrogen atom of three or four azole compounds or a ruthenium complex, and examples thereof include a triazole compound and a benzo compound. The triazole compound, the tetrazole compound, the three-till compound, and the like are particularly preferably the following three general formulas (A) and (B). The compound, the benzotriazole compound represented by the general formula (C), the tetrazole compound represented by the general formula (1)), (E), and the tri-farming compound represented by the general formula (F).

(Ri至Rs表示碳數1 〇以下的烧基、埽基、炔基、芳某、 芳烷基、烷氧基,或者此等經鹵素原子、羥基、羧基、胺 基、低級烷基取代之胺基、羥基低級烷基取代之胺基、巯 基之任一者取代之基,或者胺基、低級烷基取代之胺基、 羥基低級烷基取代之胺基、巯基、羥基、羧基,或者鹵素 原子、氫原子之任一者)。 321709 9 201035374 (c) R 〇 R4(Ri to Rs represents an alkyl group, a mercapto group, an alkynyl group, an aryl group, an aralkyl group, an alkoxy group having a carbon number of 1 Å or less, or substituted by a halogen atom, a hydroxyl group, a carboxyl group, an amine group or a lower alkyl group; a group substituted with an amine group, a hydroxy lower alkyl-substituted amine group, or a fluorenyl group, or an amine group, a lower alkyl-substituted amine group, a hydroxy lower alkyl-substituted amine group, a thiol group, a hydroxyl group, a carboxyl group, or a halogen Any of an atom or a hydrogen atom). 321709 9 201035374 (c) R 〇 R4

Rs (R4至R8表示碳數10以下的烷基、烯基、炔基、芳基、 芳烷基、烷氧基,或者此等經鹵素原子、羥基、羧基、胺 基、低級烷基取代之胺基、羥基低級烷基取代之胺基、巯 基之任一者取代之基,或者胺基、低級烷基取代之胺基、 羥基低級烷基取代之胺基、毓基、羥基、羧基,或者鹵素 原子、氫原子之任一者)。Rs (R4 to R8 represents an alkyl group, an alkenyl group, an alkynyl group, an aryl group, an aralkyl group, an alkoxy group having a carbon number of 10 or less, or substituted by a halogen atom, a hydroxyl group, a carboxyl group, an amine group or a lower alkyl group; a group substituted with an amine group, a hydroxy lower alkyl-substituted amine group, or a fluorenyl group, or an amine group, a lower alkyl-substituted amine group, a hydroxy lower alkyl-substituted amine group, a thiol group, a hydroxyl group, a carboxyl group, or Any of a halogen atom or a hydrogen atom).

(RpRi。表示碳數10以下的烷基、烯基、炔基、芳基、 芳烷基、烷氧基,或者此等經鹵素原子、羥基、羧基、胺 基、低級烷基取代之胺基、羥基低級烷基取代之胺基、毓 基之任一者取代之基,或者胺基、低級烷基取代之胺基、 羥基低級烷基取代之胺基、毓基、羥基、羧基,或者鹵素 原子、氫原子之任一者)。 10 321709 201035374 (E)(RpRi. represents an alkyl group, an alkenyl group, an alkynyl group, an aryl group, an arylalkyl group, an alkoxy group having a carbon number of 10 or less, or an amine group substituted by a halogen atom, a hydroxyl group, a carboxyl group, an amine group or a lower alkyl group. a group substituted with a hydroxy-lower alkyl-substituted amine group or a fluorenyl group, or an amine group, a lower alkyl-substituted amine group, a hydroxy lower alkyl-substituted amine group, a thiol group, a hydroxyl group, a carboxyl group, or a halogen Any of an atom or a hydrogen atom). 10 321709 201035374 (E)

(Rn、R12表㈣數的烧基、婦基、炔基 芳烷基、烷氧基,或者此等麵 〜 土 θ 基、低减基取代之胺基、=素原子、經基、竣基、胺 基之任-者取狀基,或者=低城絲狀胺基、疏 經基低級烧基取代烧基、驗^低0^基取代之胺基、 子、氮原子之任-者,而;=、經基、緩基,或者齒素原 的伸院基、伸烯基、伸炔基、从 反歡丄ϋ以下 等㈣素料、祕、縣、2基、伸技基,或者此 二硫基之任-縣狀基,H偶氮基、硫基、 二價基之任-者)。 切偶氮基、硫基、二硫基的 (F)(Rn, R12, (4) number of alkyl, keto, alkynyl aralkyl, alkoxy, or such surface ~ θ base, low minus substituted amine, = atom, thiol, fluorenyl Any one of the amine groups, or a lower-molecular amine group, a lower-based alkyl group, a lower alkyl group, a lower alkyl group-substituted amine group, a sub-nitrogen atom, And; =, the base, the slow base, or the dentinogen of the extension of the base, the extension of the alkenyl, the alkyne, from the opposite of the (four) auxiliaries, secret, county, 2 base, extension technology, or Any of these dithio groups - the county group, the H azo group, the thio group, the divalent group -). Cut azo, thio, disulfide (F)

α"至Rl6表示,碳數〜下的絲、稀基、块基、 :基、芳縣、烧氧基,或者此等㈣素原子、經基、缓 =、胺基、低减絲代之料、絲低城基取代之胺 土、疏基之任—者取代之基1者胺基、低城基取代之 胺基、經基低級烧基取代之胺基、録、錄、羧基,或 321709 11 201035374 者鹵素原子、氫原子之任一者)。 於上述-般式⑴至(F)中,Ri至&、心至 數ίο以下的惊其而〒之反 …其二 至4的低級烷基,烯 基基而s ’較佳為碳數2至4的焊基及块基 言,較佳為苯基,芳絲而言,較佳為节基。燒氧:, 較佳為碳數1至4的院氧基。此等絲、婦基、^基、。芳 基、芳燒基、絲基,可經鹵素原子、㈣、絲、、^基^ 低級院基取代之胺基、經基低級烧基取代之 任一者取代。又,^,^至^而言’其他尚可^的 胺基、低級烷基取代之胺基、羥基低級烷基取代之胺基、 毓基、羥基、羧基,或者鹵素原子、氫原子,此等之=, 宜為羥基、髄基、胺基、低級烷基取代之胺基、綾基、氫 原子。前述低級烷基取代之胺基、羥基低級烷基取代之= 基的低級烷基而言,較佳為1至4的烷基。 於R1S中,碳數10以下的伸烷基而言,較佳為碳數土 至4的低級伸烷基,碳數1〇以下的伸烯基及伸烷基而言, 較佳為碳數2至4的伸烯基及伸炔基,碳數1〇以下的伸°芳 基而言,較佳為伸笨基,碳數10以下的伸芳烷基而言,較 佳為亞苄基。此等伸烷基、伸烯基、伸炔基、伸芳基、伸 芳烷基,可經鹵素原子、羥基、羧基、胺基、巯基、偶氮 基、硫基、一硫基的任一者取代。Rls而言,其他尚可列舉: 單鍵、偶氮基、硫基、二硫基的二價基,此等之中,宜為 單鍵、偶氮基或二硫基的二價基。 可以上述一般式(A)表示之化合物而言,較佳為 321709 12 201035374 1H-1,2, 3-三唑、5-曱基-1H-1, 2, 3-三唑、5-胺基 _1H-1,2,3-三 β坐等。 可以上述一般式(Β)表示之化合物而言,較佳為 1Η-1,2, 4-三唑、3-曱基2, 4-三唑、3_ 胺基 -1H-1,2, 4-三唑、3-胺基-5-酼基-1H-1, 2, 4-三唑等。 可以上述一般式(C)表示之化合物而言’較佳為苯并三 唑、5-曱基-1H-苯并三唑、卜胺基苯并三唑、卜羥基苯并 0三嗤、:i-[n,n-雙(羥基乙基)胺基甲基]甲苯基三唑等。 可以上述一般式(D)表示之化合物而言’較佳為iH-四 唑、5-甲基-1H-四唑、5-胺基-1H-四唑、1-苯基-5-巯基_1H_ 四0坐等。 可以上述一般式(E)表示之化合物而言,較佳為聯四 唑、5, 5 ~亞甲基雙一1H-四唑、5, 5,-偶氮雙-1H-四唑、 5,5 -偶氮雙-1-甲基-四唑、5,5’ _二硫基四唑等。 〇 可以上述一般式(F)表示之化合物而言,較佳為 1’ 3’ 5-三畊、2-胺基_4一乙氧_6一甲基胺基一1? 3, 5—三畊、 2, 4-=胺基-6-苯基],3, 5_三哄、三聚氰胺㈤咖狀)等。 環内含有氮原子3個以上之哇化合物或哄化合物,在 錄覆液中不僅可使用1種,亦可使用2種以上,鐘覆液中, 較佳為合計含有〇. G1至·g/公升,更佳為& !至 么升。如未達0,Glg/公升,财會顯贴㈣特性。又, 舜P使超過3GGg/公料,亦僅徒增加因溢料所之 覆液之損失而並無益處。 ·又 用於鐘覆液之錫鹽、錯合劑、酸、以及其他構成成分 321709 13 201035374 而言,可採用周知者。 錫鹽而言,可採用任意可溶性的錫鹽類,可使用錫的 氧化物、氯化物、硫酸鹽以及有機續酸鹽等。 在進行錫合金鍍覆時,則採用能與錫形成合金之金屬 鹽,該金屬鹽而言,可使用銀、鉛、銅、鈷、鎳、鋅、鉍、 銻、銦等金屬的氧化物、氯化物、硫酸鹽以及有機磺酸鹽 等。 上述有機磺酸鹽的有機磺酸而言,可列舉:甲磺酸 (methane sul fonic acid)、乙石黃酸、曱醇石黃酸、乙醇石黃酸、 苯紛確酸、萘紛確酸等。 錫鍍覆時的錫鹽濃度,以金屬濃度計,較佳為1至 200g/公升,更佳為2至100g/公升。 錫合金鍍覆時,能與錫形成合金之金屬鹽,係相對於 錫鹽1質量份,較佳可採用0. 001至99. 9質量份,特佳可 採用0. 009至90質量份,按錫鹽和能與錫形成合金之金屬 鹽的合計,以含有錫之金屬濃度計,較佳為1至200g/公 升,更佳為2至100g/公升。 錯合劑,係將配位於銅、銅合金等該母材金屬上以形 成錯離子者,較佳為單獨使用或併用下述的(1)至(3)的鉗 合劑等。 (1)硫脲(thiourea)以及1, 3-二曱基硫脲、三曱基硫 脲、二乙基硫脲(例如,1,3-二乙基-2-硫脲)、Ν, Ν’ -二異 丙基硫脲、烯丙基硫脲、乙醯基硫脲、伸乙基硫脲、1, 3-二苯基硫脲、二氧化硫脲、胺基硫脲(thiosemicarbazide) 14 321709 201035374 等硫腺衍生物。 (2)乙二胺四乙酸(EDTA)、乙二胺四乙酸二鈉鹽 (EDTA · 2Na)、羥基乙基乙二胺三乙酸(HEDTA)、二伸乙三 胺五乙酸(DTPA)、三伸乙三胺六乙酸(TTHA)、乙二胺四丙 酸、乙二胺四(亞甲基磷酸)、二伸乙三胺五(亞甲基磷酸) 等。 (3)氮基三乙酸(1111:1^1〇1:1^&〇61:1〇3(:1(1,1^八)、亞胺 i^基二乙酸(iminodiacetic acid,IDA)、亞胺基二丙酸 ❹ (IDP)、胺基三(亞曱基磷酸)、胺基三(亞甲基磷酸)五鈉 鹽、苄基胺、2-萘基胺、異丁基胺、異戊基胺、甲二胺、 乙二胺、四亞曱基二胺、五亞曱基二胺、六亞曱基二胺、 二伸乙三胺、四伸乙五胺、五伸乙六胺、六伸乙七胺、肉 桂基胺(cinnamyl amine)、對曱氧基肉桂基胺等。 上述錯合劑的添加量,一般在5至300g/公升。 酸而言,可採用:烧石黃酸(alkane sulfonic acid)、 C)烧醇續酸(alkanol sulfonicacid)、芳香族續酸等有機石黃 酸;或者脂肪族羧酸等有機酸;硫酸、鹽酸、氟硼酸等無 機酸。烧礦酸而言,可列舉:曱續酸、乙續酸、1 -丙石黃酸、 1- 丁磺酸等。烷醇磺酸而言,可列舉:2-羥基乙烷-1-磺酸、 2- 羥基丙烷-1-磺酸、2-羥基丁烷-1-磺酸、1-羥基丙烷-2-磺酸等。芳香族磺酸而言,可列舉:苯磺酸或萘磺酸等, 而此等可經羥基、鹵素、烷基、羧基等所取代,而可列舉: 苯酚磺酸、萘酚磺酸等。脂肪族羧酸而言,可列舉:乙酸、 丙酸、正丁酸、檸檬酸等碳數1至6的羧酸。 15 321709 201035374 此等酸的濃度,較佳為1至30 0g/公升,更佳為5至 200g/公升。 其他成分而言,可列舉·‘界面活性劑、抗氧化劑等。 界面活性劑,可發揮使析出結晶微細化且均勻化之效 果,又,實施錫合金鍍覆時,則亦可發揮減少氧化還原電 位差大的錫與合金成分金屬元素之間的電位差以使合金組 成性質穩定化之效果。 界面活性劑而言,可採用:非離子系、陰離子系、陽 離子系、兩性的各種界面活性劑。 非離子系界面活性劑而言,可列舉使環氧乙烷及/或環 氧丙烷2至300莫耳與下述化合物加成聚合而成者等:聚 烷二醇、C1至C20烷醇、苯酚、萘酚、雙酚類、C1至C25 烷基苯酚、芳基烷基苯酚、C1至C25烷基萘酚、C1至C25 烷氧基磷酸(鹽)、山梨糖醇酐酯、C1至C22脂肪族醯胺等。 陰離子系界面活性劑而言,可列舉:烷基硫酸鹽、聚 氧伸乙基烷基醚硫酸鹽、聚氧伸乙基烷基苯基醚硫酸鹽、 烧基苯續酸鹽、烧基萘續酸鹽等。 陽離子系界面活性劑而言,可列舉:單烷基胺類、二 烷基胺類、三烷基胺類、二曱基二烷基銨鹽、三曱基烷基 銨鹽等。 兩性界面活性劑而言,可列舉:羧基甜菜鹼、磺基甜 菜驗、13米嗤琳甜菜驗、胺基羧酸等。 界面活性劑的濃度,較佳為0.01至10g/公升,更佳 為0. 05至5g/公升。 16 321709 201035374 抗氧化劑,係為了防止錫的氧化所添加者,可採用例 如.次磷酸或其鹽、抗壞血酸(ascorbic acid)或其鹽、氫 醌、間苯二酚(resorcin〇l)、間苯三酚(phl〇r〇glucin〇1)、 甲酚磺酸或其鹽、苯酚磺酸或其鹽、氫醌續酸或其鹽、肼 (hydrazine)等。 抗氧化劑的濃度,較佳為1至2〇〇g/公升。 本發明之無電解錫鍍覆液或錫合金鍍覆液係水溶液, 〇而鍍覆洛溫度較佳為5至9(TC,更佳為30至8〇r。如未 達30°C時,則鍍覆被膜的析出速度低,即使超過9(rc時, 亦會出現錫的沈澱而顯現浴分解等的缺點。 採用本發明之無電解錫或錫合金鍍覆液之鑛覆方法而 吕’只要將被錢覆材浸潰於鑛覆液中即可。 處理時間較佳為10至36000秒鐘,更佳為6〇至30000 秒鐘。如未達1 〇秒鐘時,則成膜性低而不能顯現良好的特 〇陡。即使超過36000秒鐘以上時,亦由於錫被膜的析出速 度會相當程度降低之故,並無益處。 所得錫鍍覆膜或錫合金鍍覆膜的膜厚,較佳為O H 至5# m,更佳為〇. 3至m。 被鍍覆材而言,可列舉:印刷線路基板、ΤΑβ薄膜載 一 θθ圓基板、連接器、引線框(lead frame)等電子構件。 匕等电子構件,較佳為表面具有銅或銅合金圖案、及經形 成於鋼及銅合金圖案之樹脂組成物者。如電子構件的銅或 鋼合金®案係經層合在基板或_等載體上時,則樹脂組 成物不僅可形成於銅或銅合金圖案上,亦可形成於本身為 321709 17 201035374 載體之基板或薄膜等上,惟較佳為至少於銅或銅合金圖案 上形成有樹脂組成物,且銅或銅合金與樹脂組成物之間具 有界面。 電子構件的例而言,可列舉:於玻璃環氧樹脂或紙酚 醛樹脂等基材表面設置銅或銅合金層,並藉由蝕刻以形成 銅或銅合金圖案後,於至少含有銅或銅合金圖案上之基板 上設置防銲層之剛性印刷基板;或於聚醯亞胺或PET(聚對 苯二曱酸乙二酯)薄膜表面上設置銅或銅合金層,並藉由蝕 刻以形成銅或銅合金圖案後,於至少含有銅或銅合金圖案 上之基板上層合有保護膜等之柔性印刷基板等。 樹脂組成物而言,較佳為本身為保護膜或防鮮層等, 作為其表面處理,較佳為採用本發明之無電解錫或錫合金 鑛覆液。 防銲層或保護膜等樹脂組成物並不特別加以限定而可 採用周知者。 設置於上述基板上之銅或銅合金層而言,可為經以周 知的方法所形成者,形成銅合金之金屬而言,可列舉:鎳、 絡、鋅、錫、銀、皱、鎂、欽、鐵、铭、猛、钻、錯、錯、 錄、錢、銦、石西、石夕等。 本發明之無電解錫或錫鍍覆液,係鍍覆滲入保護膜或 防銲層與銅或銅合金界面少,可令滲入深度成為未達30 /im,而可解決保護膜或防銲層的浮起、及形成局部電池致 使該部分的銅或銅合金之溶失等的問題。又,所得之錫或 錫合金被膜係成為銲劑可濕性良好且與銲劑之間接合可靠 18 321709 201035374 性亦良好的鍍覆被膜。 [實施例] 下列舉出實施例,藉以更詳細說明本發明。 [實施例1至23、比較例1至2] 作為被鍍覆材料,採用經於玻璃環氧基板上貼著銅, 並藉由蝕刻而形成圖案後,於至少含有銅圖案之基板上形 成防銲層(PSR4000SP19,太陽油墨)之一般的印刷線路義 〇 板’按下述方法加以鍍覆處理。 鍍覆步驟 酸性脫脂α" to Rl6, the number of carbon to the lower, the thin, the base, the base, the Fang, the alkoxy, or the (tetra) atom, the base, the slow, the amine, the low minus a material, a low-alcohol-substituted amine, a sulphide-substituent-substituted amino group, a lower-substituted amino group, an amine substituted with a lower alkyl group, a recorded, a carboxy group, or 321709 11 201035374 Any one of a halogen atom and a hydrogen atom). In the above-mentioned general formulae (1) to (F), Ri to &, the heart to the number ίο or less, the second one of the lower alkyl group, the alkenyl group and the s ' is preferably a carbon number. The solder base and the block of 2 to 4 are preferably a phenyl group, and an aromatic yarn is preferably a node group. Calcination: Preferably, the number of carbon atoms is from 1 to 4. These silk, women's base, ^ base,. The aryl group, the aryl group, and the silk group may be substituted by an amine group substituted with a halogen atom, a (four), a silk, a group, a lower group, or a group substituted with a lower group. Further, ^, ^ to ^, 'other acceptable amine groups, lower alkyl substituted amine groups, hydroxy lower alkyl substituted amine groups, mercapto groups, hydroxyl groups, carboxyl groups, or halogen atoms, hydrogen atoms, Etc. =, preferably a hydroxyl group, a mercapto group, an amine group, a lower alkyl group substituted amine group, a mercapto group, or a hydrogen atom. The lower alkyl group substituted with a lower alkyl group and the lower alkyl group substituted with a hydroxy lower alkyl group are preferably an alkyl group of 1 to 4. In R1S, the alkylene group having a carbon number of 10 or less is preferably a lower alkylene group having a carbon number of from 4 to 4, an alkenyl group having an alkyl group of 1 or less and an alkylene group, preferably a carbon number. 2 to 4 of an alkenyl group and an alkynyl group, and a aryl group having a carbon number of 1 Å or less, preferably a stearyl group, and a arylene group having a carbon number of 10 or less, preferably a benzylidene group. . Any of an alkyl group, an alkenyl group, an alkynyl group, an aryl group or an aralkyl group, which may be a halogen atom, a hydroxyl group, a carboxyl group, an amine group, a thiol group, an azo group, a thio group or a monothio group. Replaced by. Further, in the case of Rls, a divalent group of a single bond, an azo group, a thio group or a disulfide group may be mentioned, and among these, a divalent group of a single bond, an azo group or a disulfide group is preferable. In the case of the compound represented by the above general formula (A), it is preferably 321709 12 201035374 1H-1, 2, 3-triazole, 5-mercapto-1H-1, 2,3-triazole, 5-amino group. _1H-1, 2, 3-three β sit and so on. The compound represented by the above general formula (Β) is preferably 1Η-1,2,4-triazole, 3-mercapto 2,4-triazole, 3-amino-1H-1,2, 4- Triazole, 3-amino-5-mercapto-1H-1, 2,4-triazole, and the like. In the case of the compound represented by the above general formula (C), it is preferably benzotriazole, 5-mercapto-1H-benzotriazole, acenamylbenzotriazole, or hydroxybenzox-3-oxime: I-[n,n-bis(hydroxyethyl)aminomethyl]tolyltriazole or the like. In the case of the compound represented by the above general formula (D), it is preferably iH-tetrazole, 5-methyl-1H-tetrazole, 5-amino-1H-tetrazole, 1-phenyl-5-fluorenyl group. 1H_ Four zeros wait. The compound represented by the above general formula (E) is preferably bistetrazole, 5,5-methylenebis-1H-tetrazole, 5,5,-azobis-1H-tetrazole, 5, 5-Azobis-1-methyl-tetrazole, 5,5'-dithiotetrazole, and the like. The hydrazine may be a compound represented by the above general formula (F), preferably 1' 3' 5-trimized, 2-amino-4 ethoxymethyl 6-methylamino- 1 - 3, 5 - 3 Plowing, 2, 4-=amino-6-phenyl], 3, 5_ triterpene, melamine (five), etc. In the ring liquid, three or more kinds of wow compounds or ruthenium compounds may be used in the ring, and two or more kinds may be used in the recording liquid. In the bell liquid, it is preferable to contain 〇. G1 to · g/ Liter, better for & If it does not reach 0, Glg / liter, the accounting shows (four) characteristics. Moreover, 舜P makes it more than 3 GGg/fill, and it is not beneficial to increase the loss of the coating due to the flash. · Also used for the tin salt, the wrong agent, the acid, and other constituents of the bell coating 321709 13 201035374 For the well-known person. As the tin salt, any soluble tin salt can be used, and tin oxide, chloride, sulfate, and organic hydrogenate can be used. In the case of tin alloy plating, a metal salt capable of forming an alloy with tin is used. For the metal salt, an oxide of a metal such as silver, lead, copper, cobalt, nickel, zinc, ruthenium, iridium or indium may be used. Chloride, sulfate, and organic sulfonate. The organic sulfonic acid of the above organic sulfonate may, for example, be methane sul fonic acid, ethinoic acid, decyl tartaric acid, ethanol-refluoric acid, benzoic acid, naphthalene acid Wait. The tin salt concentration at the time of tin plating is preferably from 1 to 200 g/liter, more preferably from 2 to 100 g/liter, in terms of metal concentration. 009至90质量份,优选优选为0. 009至90质量份, The 001 to 99. 9 parts by mass, particularly preferably from 0. 009 to 90 parts by mass, with respect to 1 part by mass of the tin salt. The total of the tin salt and the metal salt capable of forming an alloy with tin is preferably from 1 to 200 g/liter, more preferably from 2 to 100 g/liter, based on the metal concentration of tin. The binder may be placed on the base metal such as copper or copper alloy to form a mis-ion, and it is preferred to use the following (1) to (3) tongs alone or in combination. (1) Thiourea and 1, 3-dimercaptothiourea, trimethylthiourea, diethylthiourea (for example, 1,3-diethyl-2-thiourea), hydrazine, hydrazine '-Diisopropylthiourea, allylthiourea, acetylthiourea, ethylthiourea, 1,3-diphenylthiourea, thiourea dioxide, thiosemicarbazide 14 321709 201035374 Equal sulfur gland derivatives. (2) Ethylenediaminetetraacetic acid (EDTA), ethylenediaminetetraacetic acid disodium salt (EDTA · 2Na), hydroxyethyl ethylenediamine triacetic acid (HEDTA), diethylenetriamine pentaacetic acid (DTPA), three Ethylene triamine hexaacetic acid (TTHA), ethylenediaminetetrapropionic acid, ethylenediaminetetrakis (methylenephosphoric acid), diamethylenetriamine penta (methylene phosphate), and the like. (3) Nitrogen triacetic acid (1111:1^1〇1:1^&〇61:1〇3(:1(1,1^8), iminodiacetic acid (IDA) , iminodipropionate (IDP), amine tris (phosphinium phosphate), amine tris (methylene phosphate) pentasodium salt, benzylamine, 2-naphthylamine, isobutylamine, Isoamylamine, methyldiamine, ethylenediamine, tetradecyldiamine, pentadecyldiamine, hexamethylenediamine, diethylenetriamine, tetraamethyleneamine, pentaethylene Amine, heptaerythritol, cinnamyl amine, p-methoxy cinnamylamine, etc. The amount of the above-mentioned complexing agent is generally 5 to 300 g / liter. For the acid, it can be used: burnt stone yellow Acid (alkane sulfonic acid), C) alkanol sulfonic acid, organic retinic acid such as aromatic acid; or organic acid such as aliphatic carboxylic acid; inorganic acid such as sulfuric acid, hydrochloric acid or fluoroboric acid. Examples thereof include a repeating acid, a vinyl acid, a 1-propofuronic acid, a 1-butanesulfonic acid, etc. Examples of the alkanolsulfonic acid include 2-hydroxyethane-1-sulfonic acid, and 2 - Hydroxypropane-1-sulfonic acid, 2-hydroxybutane-1-sulfonic acid 1-hydroxypropane-2-sulfonic acid, etc. The aromatic sulfonic acid may, for example, be benzenesulfonic acid or naphthalenesulfonic acid, and these may be substituted by a hydroxyl group, a halogen, an alkyl group, a carboxyl group or the like. : phenolsulfonic acid, naphtholsulfonic acid, etc. Examples of the aliphatic carboxylic acid include carboxylic acids having 1 to 6 carbon atoms such as acetic acid, propionic acid, n-butyric acid, and citric acid. 15 321709 201035374 Concentrations of such acids It is preferably from 1 to 30 g/liter, more preferably from 5 to 200 g/liter. Other components include a surfactant, an antioxidant, etc. The surfactant can be used to make the precipitated crystal fine and uniform. Further, when the tin alloy plating is applied, the potential difference between the tin and the alloy component metal element having a large difference in oxidation-reduction potential can be exhibited to stabilize the alloy composition property. Various non-ionic, anionic, cationic, and amphoteric surfactants are used. Examples of the nonionic surfactant include ethylene oxide and/or propylene oxide of 2 to 300 moles and the following compounds. Addition polymerization, etc.: polyalkylene glycol C1 to C20 alkanol, phenol, naphthol, bisphenols, C1 to C25 alkylphenol, arylalkylphenol, C1 to C25 alkyl naphthol, C1 to C25 alkoxy phosphate (salt), sorbitol An anhydride ester, a C1 to C22 aliphatic decylamine, etc. Examples of the anionic surfactant include an alkyl sulfate, a polyoxyethylidene ether sulfate, and a polyoxyethylene ethyl phenyl ether sulfate. Salt, alkyl benzoate, alkyl naphthylate, etc. Examples of the cationic surfactant include monoalkylamines, dialkylamines, trialkylamines, and dimercaptos. An alkyl ammonium salt, a tridecyl alkyl ammonium salt or the like. The amphoteric surfactant may, for example, be a carboxybetaine, a sulfo-sweet, a 13-million beet test, an aminocarboxylic acid or the like. The concentration of the surfactant is preferably from 0.01 to 10 g/liter, more preferably from 0.05 to 5 g/liter. 16 321709 201035374 Antioxidant, for the purpose of preventing the oxidation of tin, for example, hypophosphorous acid or its salt, ascorbic acid or its salt, hydroquinone, resorcinol, resorcinol Trisphenol (phl〇r〇glucin〇1), cresolsulfonic acid or a salt thereof, phenolsulfonic acid or a salt thereof, hydroquinone or a salt thereof, hydrazine or the like. The concentration of the antioxidant is preferably from 1 to 2 g/liter. The electroless tin plating solution or the tin alloy plating solution aqueous solution of the present invention has a plating temperature of preferably 5 to 9 (TC, more preferably 30 to 8 Torr). If it is less than 30 ° C, The deposition rate of the plating film is low, and even if it exceeds 9 (rc, precipitation of tin occurs, and the decomposition of the bath or the like is exhibited. The method of coating the electroless tin or tin alloy plating solution of the present invention is used. As long as the material is covered in the mineral coating, the treatment time is preferably 10 to 36,000 seconds, more preferably 6 to 30,000 seconds. If it is less than 1 second, the film forming property is obtained. It is low and does not show good characteristics. Even if it exceeds 36,000 seconds, there is no benefit because the deposition rate of the tin film is considerably reduced. The film thickness of the obtained tin plating film or tin alloy plating film. Preferably, it is OH to 5# m, more preferably 〇. 3 to m. Examples of the plated material include a printed circuit board, a ΤΑβ film-loaded θθ circular substrate, a connector, and a lead frame. An electronic component such as ruthenium or the like, preferably having a copper or copper alloy pattern on the surface and formed in steel and copper A resin composition of a pattern. If a copper or steel alloy® case of an electronic component is laminated on a substrate or a carrier, the resin composition may be formed not only on the copper or copper alloy pattern but also on itself. It is preferable that at least a copper or copper alloy pattern is formed with a resin composition on a substrate or a film of a carrier of 321709 17 201035374, and an interface exists between copper or a copper alloy and a resin composition. For example, a copper or copper alloy layer is provided on a surface of a substrate such as a glass epoxy resin or a paper phenolic resin, and after etching to form a copper or copper alloy pattern, the substrate is provided on a substrate containing at least a copper or copper alloy pattern. a rigid printed substrate of the solder resist layer; or a copper or copper alloy layer on the surface of the polyimide or PET (polyethylene terephthalate) film, and after etching to form a copper or copper alloy pattern, A flexible printed circuit board or the like having a protective film or the like laminated on a substrate containing at least a copper or copper alloy pattern. The resin composition is preferably a protective film or a fresh-keeping layer itself, as a surface treatment thereof. In order to use the electroless tin or tin alloy ore coating of the present invention, the resin composition such as the solder resist layer or the protective film is not particularly limited and can be suitably used. For the copper or copper alloy layer provided on the above substrate, For those formed by well-known methods, the metal forming the copper alloy may be exemplified by nickel, complex, zinc, tin, silver, wrinkle, magnesium, chin, iron, ming, fierce, drill, wrong, wrong, Recording, money, indium, shixi, shixi, etc. The electroless tin or tin plating solution of the present invention is such that the plating penetration protective film or the solder resist layer has less interface with copper or copper alloy, so that the penetration depth is not reached. 30 / im, can solve the problem of the floating of the protective film or the solder resist layer, and the formation of a partial battery to cause the copper or copper alloy to be dissolved in the portion. Moreover, the obtained tin or tin alloy film is made into a flux wettable Good properties and reliable bonding with the flux 18 321709 201035374 Excellent coating of the film. [Examples] The examples are enumerated below to explain the present invention in more detail. [Examples 1 to 23 and Comparative Examples 1 to 2] As a material to be plated, copper was adhered to a glass epoxy substrate, and a pattern was formed by etching, and then formed on a substrate containing at least a copper pattern. The general printed wiring board of the solder layer (PSR4000SP19, solar ink) was plated as follows. Plating step Acid degreasing

I 水洗3次 i 軟餘刻(soft etching)(硫酸一過硫酸鈉系) i 〇 水洗3次I Wash 3 times i Soft etching (sodium persulfate) i 〇 Wash 3 times

I 無電解錫鍍覆或錫合金鍍覆 水洗、乾燥 無電解錫或錫合金鍍覆液,係採用表1所記载的鐵覆 液’依7〇°Cxl〇分鐘的浸潰條件實施者。 再者’於實施例10中所用之1-[N,N-雙(羥基乙基)胺 基甲基]甲苯基三唑,係4-甲基-1-[N,N-雙(羥基乙基)胺 321709 19 201035374 基曱基]笨并二唑與5_甲基],,.雙(羥基乙基)胺基甲 基]苯并三唑的4: 6左右的混合物。 &用所仔之It覆物’按下述方式加以評估。將其結果, 表示於表1中。 (膜厚) 使用螢光x線暝厚計(SII,SFT-3200),測定在7(TCx 10分鐘的浸潰條件下之膜厚。 (防銲層之狀態) &無電解鍚或鍚合金鍵覆後,使用環氧樹脂實施該印 刷基板之_日埋人’為了觀察包含經無電解錫鍍覆之部分 與防鲜層相接觸之區域之剖面,在進行研磨以製作印刷基 施金蒸鍍作為進行爾掃描式 電子顯微鏡)觀察之用的 銅界面之鍍覆液的滲入, 如處理,藉由SEM觀察於防銲層與 按下述方式加以評估。 ◦:錄覆液滲入防銲層/銅界面30"以下者。 △.鍍覆液/參入防_層〆銅界面超過3〇,且2〇〇ρ 以下者。 X:鑛覆液渗入F方銲層/鋼界面超過200 //m者。或者, 在剛完成鍍覆當時’ _層的—部分即從銅剝離掉。 (銲劑可濕性) 於氮氣裱境下,在峰值溫度250°C下,採用迴銲爐 (reflow oven)進行迴銲(refi〇w)3 次,採用 M705-GRN-360-K2-V(千住金屬)作為銲膏(s〇ider paste),採用厚度200//m的金屬遮罩(metal mask)以進行 20 321709 201035374 銲劑可濕性之評估。 〇:迴銲3次後,於5x5mm的襯塾(pad)上全面塗佈銲 膏後進行迴銲之結果,襯墊面積的95%以上係經銲膏所被 覆者。 △:迴銲3次後,於5x5mm的襯墊上全面塗佈鮮膏後 進行迴銲之結果,襯墊面積的80%以上未達95%係經銲膏所 被覆者。 X :迴鋅3次後,於5x5mm的襯塾上全面塗佈銲膏後 進行迴銲之結果,襯墊面積的未達80%係經銲膏所被覆者。 ❹ 21 321709 201035374 5 埃 CM 3 〇 δ S s 〇 〇 o ο ο ο ο ο ο ο ο to ο ο ο ο ο ο ο CO o 〇 o 〇 8 ο 茗 〇 〇 o ο ο ο ο ο ο ο in ο ο ο ο ο ο ο ο (D o 〇 Ο s o 8 δ s T"· 〇 〇 o ο ο ο ο ο ο ΙΟ ο ο ο ο ο ο ο ο ο ΙΟ CO Ψ»· o 〇 en s o δ S ^*· 〇 〇 o ο ο ο ο ο ΙΟ ο ο ο ο ο ο ο ο ο ο 04 o 〇 α> o o 8 S 〇 〇 o ο ο ο ο ΙΟ ο ο ο ο ο ο ο ο ο ο ο CO <·— o 〇 卜 o o S 8 〇 〇 o ο ο ο ΙΟ ο ο ο ο ο ο ο ο ο ο ο ο o 〇 CD o o S S 产 〇 〇 〇 o ο ο ΙΟ ο ο ο ο ο ο ο ο ο ο ο ο ο «Μ 〇ί o 〇 ΙΟ s o δ S 1·» S 〇 〇 o ο ΙΟ ο ο ο ο ο ο ο ο ο ο ο ο ο ο CM o 〇 对 o o ο ^Μ» ο 宕 〇 〇 o ΙΑ ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο o 〇 CO o o 8 S S 〇 〇 to ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ro »·· o 〇 CM s o S V·· 8 S ^*· 〇 ΙΟ o ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο o 〇 s o S S 〇 - ΙΟ ο o ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο g o 〇 K /*N 女 ti eg 5- / 嫌 资 6- + «! B- «ί 费 6- 辑 « /-Ν 〇 I _ 屮 V-X 敏 Μ Ο K| evT SC w4 »»i CO ••4 T 6- f 、丨1 Λ Ξ 1 铯 J, “1 1 令 CvT mmrn ν·Ν f Hi IS 1 tt ,丨1 *> Μ 钼 Λ ¥ 1 ΙΛ 铯 Λ ¥ Ι<1 ®- Β- <4 隹 /-Ν ο ¥ 2S a£ i_l 1 «Μ ψ Β 上 ψ^< S- ψ Β •1 «< 铤 ιη ¥ S 香 5 δ- ! «έ 1 ίη ΙίΓ 十 ε SS Lf5 ιτί 香 Hi 丄 CO ··< 隹 «έ Ml 苷 "I tn CO •Ν 1 蚪 i 1 Ί evT «4: * «Ε a: 22 321709 201035374 ο Ο 實施例 1 CO o Ο 8 Vi· ο § 〇 〇 〇 i o o ο ο ο ο ο ο ο ο ο ο ο ο ο 1 0.59 | 〇 < 芑 ο Ο ο ο δ 〇 〇 〇 1 0.0Q1 1 o o ο ο ο ο ο ο ο ο ο ο ο ο ο 1 0.98 < 〇 o § ο ο ο 〇 〇 〇 in o o ο ο ο ο ο ο ο ο ο ο ο ο ο S T-· 〇 〇 s o ο S S δ ψ^ 〇 〇 〇 l〇 o o &〇 ο ο ο ο ο ο ο ο ο ο ο ο 1 1.07 〇 〇 a> o ο S ·*— δ S 〇 〇 〇 o o o ο ο ο ο ο ο ο ο ο ο ο ο ΙΟ 1 1.09 〇 〇 w o ο S 8 宕 ▼Τ· 〇 〇 〇 o o o ο ο ο ο ο ο ο ο ο ο ο ΙΟ ο 〇> 二· 〇 〇 r- 宕 ο § •9"" S W 〇 〇 〇 o o o ο ο ο ο ο ο ο ο ο ο ΙΟ ο ο 1 1.08 〇 〇 «D s ο ο ο ο 另 〇 〇 〇 o o o ο ο ο ο ο ο ο ο ο ιη ο ο ο CO 〇 〇 to s ο S § 8 〇 〇 〇 o o o ο ο ο ο ο ο ο ο ιη ο ο ο ο 1 1.09 〇 〇 o ο ο ο s 〇 〇 〇 o o o ο ο ο ο ο ο ο κη ο ο ο ο ο 1 1.25 〇 〇 CO s ο ο ο ο s 〇 〇 〇 o o o ο ο ο ο ο ο Μ> ο ο ο ο ο ο 1 1.09 0 〇 成分及其濃度(g/L) f磺酸踢(以Sn2+計) + a «f 资 6- 1 甲磺酸 ι 1 硫脲 I 1 次磷酸銷 1 1 聚乙二酵(分子董loooo) 1 1 1丨卜1,2,3-三含 1 | 5-甲基-11Μ,2,3-三喳 'ί1 CO 1 4 铤 ik | 1丨丨-1,2,4-三唑 、、i Λ «N M 1 4 'Ί ca •M 鍩 1 苯并三哇 1 5-平基-11卜苯并三哇 1 1-胺基苯并三哇 •ft 'Ί »- Γ—Ί ¢- ^•Ν 0 ¥ 1 •«Η 1 5-甲基-11卜四唑 1 5-胺基-1Η-四峻 1 卜苯基-5-»基-ΠΙ-四喳 1 聯四哇 1 gr fe- 1 J m 1 In in 1 5,5,-二硫-111-四嗤 苷 til ιό CO ««Η 1 三聚氱胺 营= Hi 1 ΙΛ «Γ 4 1 >1 1 防銲層的狀磨 1 鲜劑可濕性 23 321709 201035374 [表 1 -3 ] 成分及其濃度 比較例 1 2 甲磺酸錫(以Sn2+計) 20 20 甲續酸銀(以Ag+計) 0 0. 1 甲磺酸 100 100 硫腺 100 100 次磷酸鈉 30 30 聚乙二醇(分子量10, 000) 1 1 1H-1,2, 3-三唑 0 0 5-曱基-1H-1,2, 3-三唑 0 0 5-胺基-1H-1,2, 3-三唑 0 0 1H-1, 2, 4-三唑 0 0 3-曱基-1H-1,2,4-三唑 0 0 3-胺基2, 4-三。坐 0 0 苯并三唑 0 0 5-甲基-1H-苯并三唑 0 0 1-胺基苯并三唑 0 0 1-[N,N-雙(羥基乙基)胺基曱基]甲笨基三唑 0 0 5-曱基-ΙΗ-四〇坐 0 0 5-胺基-1H-四0坐 0 0 1-苯基-5-魏基-1^_四〇坐 0 0 聯四〇坐 0 0 5, 5’ -偶氮雙-1-甲基四唑 0 0 5,5’ -二硫-1H-四唑 0 0 1,3,5-三畊 0 0 三聚氰胺 0 0 2, 4-二胺基-6-苯基-1,3,5-三哄 0 0 膜厚(// m) 1. 08 0. 98 防銲層的狀態 X X 銲劑可濕性 〇 〇 【圖式簡單說明】無 【主要元件符號說明】無 24 321709I Electroless tin plating or tin alloy plating Water washing and drying Electroless tin or tin alloy plating liquid is carried out by using the iron coating liquid described in Table 1 under the impregnation conditions of 7 ° C C 1 l min. Further, 1-[N,N-bis(hydroxyethyl)aminomethyl]tolyltriazole used in Example 10 is 4-methyl-1-[N,N-bis(hydroxyl) A mixture of 4:6 of aryl 321709 19 201035374 hydrazino] benzodiazepine and 5-methyl], bis(hydroxyethyl)aminomethyl]benzotriazole. & It is evaluated by the following "It's covered". The results are shown in Table 1. (Thickness) Using a fluorescent x-ray thickness gauge (SII, SFT-3200), the film thickness at 7 (TCx 10 minutes of impregnation conditions was measured. (State of solder resist layer) & electroless 钖 or 钖After the alloy bond is applied, the printed circuit board is formed by using an epoxy resin. In order to observe a cross section of a region including the portion where the electroless tin plating is in contact with the anti-fresh layer, the polishing is performed to prepare a printing base. The vapor deposition was carried out as a plating solution of the copper interface for observation by a scanning electron microscope. For example, the treatment was carried out by SEM observation on the solder resist layer and evaluated as follows. ◦: The recording liquid penetrates into the solder mask/copper interface 30" △. Plating solution / into the anti-layer 〆 copper interface more than 3 〇, and 2 〇〇 ρ or less. X: The mineral coating penetrates into the F square weld layer/steel interface over 200 //m. Alternatively, the portion of the ' _ layer at the time of completion of the plating is peeled off from the copper. (flux wettability) Reflow soldering (refi〇w) 3 times in a reflow oven at a peak temperature of 250 ° C under a nitrogen atmosphere, using M705-GRN-360-K2-V ( As a solder paste, a metal mask with a thickness of 200//m was used to evaluate the wettability of the solder of 20 321 709 201035374. 〇: After reflowing 3 times, the solder paste was completely applied to a 5x5 mm pad and then reflowed. More than 95% of the pad area was covered by the solder paste. △: After the reflowing was performed three times, the fresh paste was applied to the 5x5 mm pad and the reflow was performed. As a result, 80% or more of the pad area was less than 95% of which was covered by the solder paste. X: After the zinc was returned three times, the solder paste was applied to the 5x5 mm lining and the reflow was performed. As a result, less than 80% of the pad area was covered by the solder paste. ❹ 21 321709 201035374 5 ang CM 3 〇δ S s 〇〇o ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ^*· 〇〇o ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο <·- o oo oo S 8 〇〇o ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο Μ 1 1 1 1 1 1 1 1 1 1 1 1 oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo 1 oo 1 1 1 oo 1 1 1 1 1 1 1 1 1 1 〇o ΙΑ ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο So SV·· 8 S ^*· 〇ΙΟ o ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο - + «! B- «ί 6-series « /-Ν 〇I _ 屮VX Μ Ο K| evT SC w4 »»i CO ••4 T 6- f , 丨1 Λ Ξ 1 铯J, “ 1 1 令 CvT mmrn ν·Ν f Hi IS 1 tt ,丨1 *> Λ Molybdenum Λ ¥ 1 ΙΛ 铯Λ ¥ Ι<1 ®- Β- <4 隹/-Ν ο ¥ 2S a£ i_l 1 « Μ ψ ψ 上ψ^< S- ψ Β •1 «< 铤ιη ¥ S 香5 δ- ! «έ 1 ίη ΙίΓ Ten ε SS Lf5 ιτί 香 Hi 丄CO ··< 隹«έ Ml glucoside &quot I tn CO •Ν 1 蚪i 1 Ί evT «4: * «Ε a: 22 321709 201035374 ο 实施 Example 1 CO o Ο 8 Vi· ο § 〇〇〇ioo ο ο ο ο ο ο ο ο ο ο ο ο ο 1 0.59 | 〇< 芑ο Ο ο ο δ 〇〇〇1 0.0Q1 1 oo ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο Oo ο ο ο ο ο ο ο ο ο T S S SS SS SS SS SS SS SS SS SS 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 ο ο ο ο ο ο ο ο 1.0 1.0 1.0 1.0 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. · 〇〇〇ooo ο ο ο ο ο ο ο ο ο ο ο ο 9 - 二 二 二 - - - - 9 - 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 ο ο ο 1 1.08 〇〇«D s ο ο ο ο 〇〇〇ooo ο ο ο ο ο ο ο ο ο ι ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ο ι ο 1. oo 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. 1. oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo oo ο ο ο ο ο Μ> ο ο ο ο ο ο 1 1.09 0 〇 composition and its concentration (g/L) f sulfonic acid kick (in terms of Sn2+) + a «f 6- 1 methanesulfonate ι 1 thiourea I 1 Phosphoric Acid Pin 1 1 Polyethylene Diacetate (Molecular Dong loooo) 1 1 1丨 Bu 1,2,3-Tri 1 | 5-Methyl-11Μ, 2,3-三喳'ί1 CO 1 4 铤Ik | 1丨丨-1,2,4-triazole, i Λ «NM 1 4 'Ί ca •M 1 benzotriwas 1 5-pinyl-11 benzotrim 1 1-aminobenzotrizole • ft 'Ί »- Γ—Ί ¢- ^•Ν 0 ¥ 1 •«Η 1 5-A Base-11-tetrazole 1 5-amino-1Η-四峻1 phenyl-5-»yl-ΠΙ-tetrazine 1 联四哇1 gr fe-1 M 1 In in 1 5,5,- Disulfide-111-tetraguanoside til ιό CO ««Η 1 Trimeric amide camp = Hi 1 ΙΛ «Γ 4 1 >1 1 Weld-proof layer 1 Freshness wettability 23 321709 201035374 [Table 1 -3 ] Composition and concentration comparison Example 1 2 Tin methane sulfonate (calculated as Sn 2+ ) 20 20 Silver methacrylate (as Ag + ) 0 0. 1 Methanesulfonic acid 100 100 Sulfur gland 100 100 Sodium hypophosphite 30 30 Ethylene glycol (molecular weight 10,000) 1 1 1H-1,2,3-triazole 0 0 5-mercapto-1H-1,2,3-triazole 0 0 5-amino-1H-1,2 , 3-triazole 0 0 1H-1, 2, 4-triazole 0 0 3-mercapto-1H-1,2,4-triazole 0 0 3-amino 2, 4-tri. Sitting 0 0 benzotriazole 0 0 5-methyl-1H-benzotriazole 0 0 1-aminobenzotriazole 0 0 1-[N,N-bis(hydroxyethyl)aminoindenyl]甲基基三唑0 0 5-曱-ΙΗ-四〇坐0 0 5-amino-1H-four 0 sitting 0 0 1-phenyl-5-weiki-1^_四〇坐0 0 Squatting 0 0 5, 5'-azobis-1-methyltetrazole 0 0 5,5'-dithio-1H-tetrazole 0 0 1,3,5-three tillage 0 0 melamine 0 0 2 , 4-diamino-6-phenyl-1,3,5-trioxin 0 0 film thickness (// m) 1. 08 0. 98 state of solder resist layer XX flux wettability 〇〇 [pattern Brief description] No [Main component symbol description] No 24 321709

Claims (1)

201035374 七、申請專利範圍: 1. 一種無電解錫或錫合金鍍覆液,其係至少含有錫鹽、錯 合劑、酸之無電解錫或錫合金鍍覆液,其中,含有環内 含有3個以上氮原子之唑化合物或畊化合物。 2. 如申請專利範圍第1項之無電解錫或錫合金鍍覆液,其 中,該無電解錫或錫合金鐘覆液含有下述一般式(A)或 (B)表示之三嗤化合物:201035374 VII. Patent application scope: 1. An electroless tin or tin alloy plating solution, which contains at least tin salt, a wrong agent, an acid-free electroless tin or tin alloy plating solution, wherein the ring contains 3 An azole compound or a cultivating compound of the above nitrogen atom. 2. The electroless tin or tin alloy plating solution according to the first aspect of the patent application, wherein the electroless tin or tin alloy clock solution contains the triterpenoid compound represented by the following general formula (A) or (B): (Ri至R3表示碳數10以下的烷基、烯基、炔基、 芳基、芳烷基、烷氧基,或者此等經鹵素原子、羥基、 羧基、胺基、低級烷基取代之胺基、羥基低級烷基取代 之胺基、巯基之任一者取代之基,或者胺基、低級烷基 取代之胺基、羥基低級烷基取代之胺基、酼基、羥基、 緩基,或者鹵素原子、氫原子之任一者)。 3.如申請專利範圍第1項之無電解錫或錫合金鍍覆液,其 中,該無電解錫或錫合金鍍覆液含有下述一般式(C)表 示之苯并三峻化合物: 25 321709 201035374 (c)(Ri to R3 represent an alkyl group, an alkenyl group, an alkynyl group, an aryl group, an arylalkyl group, an alkoxy group having a carbon number of 10 or less, or an amine substituted by a halogen atom, a hydroxyl group, a carboxyl group, an amine group or a lower alkyl group; a group substituted with a hydroxyl lower alkyl group substituted with an amine group or a fluorenyl group, or an amine group, a lower alkyl group-substituted amine group, a hydroxy lower alkyl group-substituted amine group, a decyl group, a hydroxyl group, a slow group, or Any of a halogen atom or a hydrogen atom). 3. The electroless tin or tin alloy plating solution according to the first aspect of the patent application, wherein the electroless tin or tin alloy plating solution contains the benzotrisamine compound represented by the following general formula (C): 25 321709 201035374 (c) 芳芙(=表示碳數10以下的烧基、烯基、炔基、 氧基’或者此等經鹵素原子、經基、 之胺基、取代之絲、減低域基取代 取代之胺I 叙基,或者胺基、低級燒基 、,、土、羥基低級烷基取代之胺基、巯基、羥基、 4. 叛基,或者i素原子、氫原子之任一者)。 如申明專利範圍第i項之無電解錫或錫合金鑛覆液,其 中’該無電解錫或錫合金錢覆液含有下述-般式(D)表 示之四唾化合物:A aryl (= represents a decyl group, an alkenyl group, an alkynyl group, an oxy group having a carbon number of 10 or less or an amine substituted by a halogen atom, a transatom group, an amine group, a substituted filament, or a substituted domain group) Or an amine group, a lower alkyl group, a soil, a hydroxy group lower alkyl group-substituted amine group, a fluorenyl group, a hydroxyl group, a ruthenium group, or an i atom or a hydrogen atom). For example, the electroless tin or tin alloy ore coating of the item i of the patent scope, wherein the electroless tin or tin alloy coating contains the tetra-salt compound represented by the following formula (D): (h、R!。表示碳數1〇以下的烷基、烯基、炔基、芳 基、芳烷基、烷氧基,或者此等經鹵素原子、羥基、羧 基、胺基、低級烷基取代之胺基、羥基低級烷基取代之 胺基、巯基之任一者取代之基,或者胺基、低級燒基取 代之胺基、羥基低級烷基取代之胺基、酼基、羥基、羧 基’或者ii素原子、氫原子之任一者)。 26 321709 201035374 5.如申請專利範圍第1項之無電解錫或錫合金鍍覆液,其 中,該無電解錫或錫合金鍍覆液含有下述一般式(E)表 示之四Π坐化合物:(h, R! represents an alkyl group, an alkenyl group, an alkynyl group, an aryl group, an arylalkyl group, an alkoxy group having a carbon number of 1 Å or less, or a halogen atom, a hydroxyl group, a carboxyl group, an amine group or a lower alkyl group; a substituted amino group, a hydroxy lower alkyl substituted amine group, a thiol group substituted with any one, or an amine group, a lower alkyl group substituted amine group, a hydroxy lower alkyl group substituted amine group, a thiol group, a hydroxyl group, a carboxyl group 'or ii atom or hydrogen atom). 26 321709 201035374 5. The electroless tin or tin alloy plating solution according to claim 1, wherein the electroless tin or tin alloy plating solution contains the tetradentate compound represented by the following general formula (E): (Rn、R12表示碳數10以下的烷基、烯基、炔基、 〇 芳基、芳烧基、烧氧基,或者此等經鹵素原子、經基、 羧基、胺基、低級烷基取代之胺基、羥基低級烷基取代 之胺基、巯基之任一者取代之基,或者胺基、低級烷基 取代之胺基、羥基低級烷基取代之胺基、巯基、羥基、 叛基,或者鹵素原子、氫原子之任一者,而Rl3表示單 鍵,或者碳數10以下的伸烷基、伸烯基、伸炔基、伸 芳基、伸芳烷基,或者此等經鹵素原子、羥基、羧基、 〇 胺基、巯基、偶氮基、硫基、二硫基之任一者取代之基, 或者偶氮基、硫基、二硫基的二元基之任一者)^ 6.如申請專利範圍第1項之無電解錫或錫合金鍍覆液,其 中,該無電解錫或錫合金鍍覆液含有下述一般式(F)表 示之三哄化合物:(Rn and R12 represent an alkyl group, an alkenyl group, an alkynyl group, an anthranyl group, an aryl group, an alkoxy group having a carbon number of 10 or less, or a halogen atom, a trans group, a carboxyl group, an amine group or a lower alkyl group; a group substituted with an amine group, a hydroxy lower alkyl-substituted amine group, or a fluorenyl group, or an amine group, a lower alkyl-substituted amine group, a hydroxy lower alkyl-substituted amine group, a thiol group, a hydroxyl group, a thiol group, Or a halogen atom or a hydrogen atom, and Rl3 represents a single bond, or an alkylene group having at least 10 carbon atoms, an alkenyl group, an alkynyl group, an aryl group, an aralkyl group, or a halogen atom. Any one of a hydroxyl group, a carboxyl group, a decyl group, a fluorenyl group, an azo group, a thio group or a disulfide group, or a azo group, a thio group or a disulfide group; 6. The electroless tin or tin alloy plating solution according to claim 1, wherein the electroless tin or tin alloy plating solution contains the triterpenoid compound represented by the following general formula (F): 27 321709 201035374 (^至-表示碳數10以下的烷基、烯基、炔基、 芳基、芳烷基、烷氧基,或者此等經齒素原子、羥基、 幾基、胺基、低級烷基取代之胺基、羥基低級烷基取代 之胺基、麟之任-者取代之基,或者胺基、低級院基 取代之胺基、羥基低級烷基取代之胺基、巯基、羥基、 羧基,或者齒素原子、氫原子之任一者)。27 321709 201035374 (^ to - represents an alkyl group, an alkenyl group, an alkynyl group, an aryl group, an arylalkyl group, an alkoxy group having a carbon number of 10 or less, or such a dentate atom, a hydroxyl group, a aryl group, an amine group, or a lower order An alkyl-substituted amine group, a hydroxy lower alkyl-substituted amine group, a lining-substituted group, or an amine group, a lower-grade substituted amino group, a hydroxy lower alkyl-substituted amine group, a thiol group, a hydroxyl group, Carboxyl group, or any of a dentate atom or a hydrogen atom). 9. 10. 電子構件,其係將表面具有銅或銅合金圖案、及至 少經形成於該銅或銅合金圖案上之樹脂組成物之電子 構件浸潰於申請專利範圍第1項至第6項中任—項之益 電解錫或錫合金鑛覆液$,而形成錫或錫合金被膜之電 子構件,前述無電解錫或錫合金鑛覆液參人銅或鋼 與樹脂組成物界面之深度為30 以下者。 如申請專利範圍第7項之電子構件,其中 係印刷線路基板。 Μ子構件 如申請專利範圍第7項之電子構件 係TAB薄臈載體。 该電子構件 該電子構件 如申請專利範圍第7項之電子構件,其中, 係晶圓基板。 321709 28 201035374 四、指定代表圖:本案無圖式 (一) 本案指定代表圖為:第()圖。 (二) 本代表圖之元件符號簡單說明: 五、本案若有化學式時,請揭示最能顯示發明特徵的化學式: 本案無代表化學式 321709 201035374 州WW丨令e ,::修正| 抗氧化劑’係為了防止錫的氧化所添加者,可採兩~茶厂f 如:次磷酸或其鹽、抗壞血酸(ascorbic ac丨幻或其鹽、氫 西昆、間本一紛(resorcinol )、間苯三盼(phior〇giucin〇i)、 曱酚磺酸或其鹽、苯酚磺酸或其鹽、氫醌磺酸或其鹽、肼 (hydrazine)等。 抗氧化劑的濃度,較佳為1至2〇〇g/公升。 本發明之無電解錫鍍覆液或錫合金鍍覆液係水溶液, 〇而鍍覆浴溫度較佳為5至9(TC,更佳為30至80t。如未 達30°C時,則鍍覆被膜的析出速度低,即使超過9〇〇c時, 亦會出現錫的沈澱而顯現浴分解等的缺點。 採用本發明之無電解錫或錫合金鍍覆液之鍍覆方法而 s,只要將被鍍覆材浸潰於鍍覆液中即可。 處理時間較佳為10至36000秒鐘,更佳為60至3000() 秒鐘。如未達10秒鐘時,則成膜性低而不能顯現良好的特 性。即使超過36000秒鐘以上時,亦由於錫被膜的析出速 〇度會相當程度降低之故,並無益處。 所得錫鍍覆膜或錫合金鍍覆膜的膜厚,較佳為〇 〇1 至5/zm ’更佳為〇. 3至3#m。 被鍍覆材而言,可列舉:印刷線路基板、ΤΑβ薄膜載 體、晶圓基板、連接器、引線框(lead frame)等電子構#。 此等電子構件,較佳為表面具有銅或銅合金圖案、及經形 成方、銅及銅合金圖案之樹脂組成物者。如電子構件的銅或 銅合金圖案係經層合在基板或薄膜等載體上時,則樹脂組 成物不僅可形成於銅或銅合金圖案上,亦可形成於本身為 321709 17 201035374 第98144664號專利申請案 、 ^ (99 年 4 月 21 曰) 載體之基板或薄膜等上,惟較佳為至少於銅或銅合金圖案 上形成有樹脂組成物,且銅或銅合金與樹脂組成物之間具 有界面。 電子構件的例而言,可列舉:於玻璃環氧樹脂或紙酚 酸樹脂等基材表面設置鋼或銅合金層,並藉由钕刻以形成 銅或銅合金圖案後,於至少含有銅或銅合金圖案之基板上 設置防銲層之剛性印刷基板;或於聚醯亞胺或ρΕτ(聚對苯 二甲酸乙二醋)薄膜表面上設置銅或銅合金層,並藉由钱刻 以形成銅或銅合金圖案後,於至少含有銅或銅合金圖案之 基板上料有保護膜等之柔性印刷基板等。 、樹月日組成物而言’較佳為本身為保護膜或防銲層等, 作為’、表面處理’較佳為採用本發明之無電解錫或錫合金 、β層或保遵膜專樹脂組成物並不特別加以限定而可 採用周知者。 、:上述基板上之銅或銅合金層而言,可為經以周 矣的方去所形成者,形成銅合金之金屬而言 ,可列舉:鎳、 鉻、鋅、錫、銀、鈹、鎂、鈦、鐵、紹、猛、録、鉛、錯、 銻、鉍、銦、硒、矽等。 u 卩之無f解錫或錫合金鍍覆液,雜驗參入保護 ^層與鋼或鋼合金界面少,可令滲入深度成為未達 30 // m ’而可解、ι w '千、暖膜或防銲層的浮起、及形成局部電池 二:、:刀的鋼或鋼合金之溶失等的問題。又,所得之錫或 錫合金被膜係成发 馬1干Μ可濕性良好且與銲劑之間接合可靠 18 321709修正版9. 10. An electronic component which is impregnated with an electronic component having a copper or copper alloy pattern on its surface and at least a resin composition formed on the copper or copper alloy pattern in the first to sixth items of the patent application scope In the middle of the project - the benefit of electrolytic tin or tin alloy ore coating, and the formation of tin or tin alloy coating electronic components, the aforementioned electroless tin or tin alloy ore coating the thickness of the copper or steel and resin composition interface 30 or less. The electronic component of claim 7, wherein the printed circuit board is a printed circuit board. The tweezers member The electronic component of the seventh application of the patent application is a TAB thin carrier. The electronic component is the electronic component of the seventh aspect of the patent application, wherein the electronic component is a wafer substrate. 321709 28 201035374 IV. Designated representative map: There is no schema in this case (1) The representative representative map of this case is: (). (2) A brief description of the symbol of the representative figure: 5. If there is a chemical formula in this case, please disclose the chemical formula that best shows the characteristics of the invention: This case is not represented by the chemical formula 321709 201035374 State WW Order e,:: Correction | Antioxidant 'System In order to prevent the oxidation of tin, you can take two ~ tea factory f such as: hypophosphorous acid or its salt, ascorbic acid (ascorbic ac illusion or its salt, hydrogen xi Kun, resorcinol, benzophenone) (phior〇giucin〇i), indophenolsulfonic acid or a salt thereof, phenolsulfonic acid or a salt thereof, hydroquinonesulfonic acid or a salt thereof, hydrazine, etc. The concentration of the antioxidant is preferably 1 to 2 Torr. g/liter. The electroless tin plating solution or the tin alloy plating solution aqueous solution of the present invention, and the plating bath temperature is preferably 5 to 9 (TC, more preferably 30 to 80 t. If less than 30 ° C In this case, the deposition rate of the plating film is low, and even if it exceeds 9 〇〇c, there is a drawback that tin precipitates and the bath is decomposed. The plating method of the electroless tin or tin alloy plating liquid of the present invention is employed. And s, as long as the plated material is immersed in the plating solution. Preferably, it is 10 to 36,000 seconds, more preferably 60 to 3000 () seconds. If it is less than 10 seconds, the film formation property is low and the good characteristics are not exhibited. Even if it exceeds 36,000 seconds, it is also due to tin. The filming speed of the film is considerably reduced, and there is no benefit. The film thickness of the obtained tin plating film or tin alloy plating film is preferably 〇〇1 to 5/zm', more preferably 〇. 3 to 3#m. Examples of the plated material include a printed circuit board, a ΤΑβ film carrier, a wafer substrate, a connector, and a lead frame. The electronic components preferably have a surface. a copper or copper alloy pattern, and a resin composition formed by a square, copper, and copper alloy pattern. When a copper or copper alloy pattern of an electronic component is laminated on a substrate or a film, the resin composition is not limited It may be formed on a copper or copper alloy pattern, or may be formed on a substrate or film of the carrier of the patent application No. 98, s s s s s s s s s s s s s s s s s s s s s s s s s s s s s s s s s s s s s s s a resin composition is formed on the copper alloy pattern, and Or an interface between the copper alloy and the resin composition. Examples of the electronic member include a steel or a copper alloy layer formed on a surface of a substrate such as a glass epoxy resin or a paper phenolic resin, and formed by engraving. a copper or copper alloy pattern, a rigid printed substrate provided with a solder resist layer on a substrate containing at least a copper or copper alloy pattern; or copper on a surface of a polyimide or ρΕτ (polyethylene terephthalate) film Or a copper alloy layer, and after forming a copper or copper alloy pattern by a money, a flexible printed circuit board or the like having a protective film or the like is applied to a substrate containing at least a copper or copper alloy pattern. For the composition of the tree and the moon, it is preferably a protective film or a solder resist layer. As the 'surface treatment', it is preferred to use the electroless tin or tin alloy of the present invention, the beta layer or the film. The composition is not particularly limited and can be well known. The copper or copper alloy layer on the substrate may be formed by a circumferential process, and examples of the metal forming the copper alloy include nickel, chromium, zinc, tin, silver, and antimony. Magnesium, titanium, iron, Shao, Meng, recorded, lead, wrong, bismuth, antimony, indium, selenium, tellurium and so on. u 卩 无 解 解 解 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或 或The floating of the warm film or the solder resist layer, and the formation of the local battery 2:: the problem of the dissolution of the steel or steel alloy of the knife. Further, the obtained tin or tin alloy film is made into a hair dryer 1 and has a good wettability and a reliable bond with the flux. 18 321 709 Revision
TW98144664A 2008-12-24 2009-12-24 Electroless tin or tin alloy plating solution and electronic element foemed with tin or tin alloy film by using electroless tin or tin alloy plating solution TW201035374A (en)

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TWI553157B (en) * 2015-06-26 2016-10-11 長興材料工業股份有限公司 Pretreatment composition for metal-clad laminate and uses of the same

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KR20120004776A (en) * 2010-07-07 2012-01-13 삼성전기주식회사 Autocatalytic tin plating solution and autocatalytic tin plating method using the same
WO2017115701A1 (en) * 2015-12-28 2017-07-06 三菱マテリアル株式会社 Snag alloy plating liquid
JP6210148B2 (en) 2015-12-28 2017-10-11 三菱マテリアル株式会社 SnAg alloy plating solution
US10868383B2 (en) * 2017-01-30 2020-12-15 Jx Nippon Mining & Metals Corporation Surface-treated plated material, connector terminal, connector, FFC terminal, FFC, FPC and electronic part

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JP3419995B2 (en) * 1996-05-10 2003-06-23 株式会社大和化成研究所 Electroless tin-silver alloy plating bath
JP2009235565A (en) * 2008-03-04 2009-10-15 Nippon Paint Co Ltd Solution for and method of treating surface of copper

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* Cited by examiner, † Cited by third party
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TWI553157B (en) * 2015-06-26 2016-10-11 長興材料工業股份有限公司 Pretreatment composition for metal-clad laminate and uses of the same

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