TW201034846A - Glass member with seal-bonding material layer and method for producing same, and electronic device and method for manufacturing same - Google Patents

Glass member with seal-bonding material layer and method for producing same, and electronic device and method for manufacturing same Download PDF

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TW201034846A
TW201034846A TW098143641A TW98143641A TW201034846A TW 201034846 A TW201034846 A TW 201034846A TW 098143641 A TW098143641 A TW 098143641A TW 98143641 A TW98143641 A TW 98143641A TW 201034846 A TW201034846 A TW 201034846A
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sealing
glass
glass substrate
layer
material layer
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TW098143641A
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Chinese (zh)
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TWI462829B (en
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Sohei Kawanami
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Asahi Glass Co Ltd
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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/10Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C27/00Joining pieces of glass to pieces of other inorganic material; Joining glass to glass other than by fusing
    • C03C27/06Joining glass to glass by processes other than fusing
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00Glass compositions
    • C03C3/04Glass compositions containing silica
    • C03C3/062Glass compositions containing silica with less than 40% silica by weight
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00Glass compositions
    • C03C3/12Silica-free oxide glass compositions
    • C03C3/16Silica-free oxide glass compositions containing phosphorus
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00Glass compositions
    • C03C3/12Silica-free oxide glass compositions
    • C03C3/16Silica-free oxide glass compositions containing phosphorus
    • C03C3/17Silica-free oxide glass compositions containing phosphorus containing aluminium or beryllium
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/02Frit compositions, i.e. in a powdered or comminuted form
    • C03C8/08Frit compositions, i.e. in a powdered or comminuted form containing phosphorus
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/24Fusion seal compositions being frit compositions having non-frit additions, i.e. for use as seals between dissimilar materials, e.g. glass and metal; Glass solders
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1339Gaskets; Spacers; Sealing of cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J11/00Gas-filled discharge tubes with alternating current induction of the discharge, e.g. alternating current plasma display panels [AC-PDP]; Gas-filled discharge tubes without any main electrode inside the vessel; Gas-filled discharge tubes with at least one main electrode outside the vessel
    • H01J11/20Constructional details
    • H01J11/48Sealing, e.g. seals specially adapted for leading-in conductors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/24Manufacture or joining of vessels, leading-in conductors or bases
    • H01J9/26Sealing together parts of vessels
    • H01J9/261Sealing together parts of vessels the vessel being for a flat panel display
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/02Details
    • H05B33/04Sealing arrangements, e.g. against humidity
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • H10K59/87Passivation; Containers; Encapsulations
    • H10K59/871Self-supporting sealing arrangements
    • H10K59/8722Peripheral sealing arrangements, e.g. adhesives, sealants

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Glass Compositions (AREA)
  • Electroluminescent Light Sources (AREA)
  • Joining Of Glass To Other Materials (AREA)

Abstract

Seal-bonding properties and reliability of an electronic device are improved by increasing bonding strength to a glass substrate with good reproducibility during laser seal-bonding. A glass substrate (3) has a sealing region. The sealing region is provided with a seal-bonding material layer (5) that is a fired layer of a seal-bonding glass material containing a seal-bonding glass, a low expansion filler and a laser absorbent. The seal-bonding glass contains, on a mass basis, 20-68% of SnO, 0.5-5% of SnO2 and 20-40% of P2O5. The seal-bonding material layer (5) has a residual carbon content of 20-1,000 ppm on a mass basis. The glass substrate (3) and a glass substrate (2) having an element formation region that is provided with an electronic element are stacked together, and the seal-bonding material layer (5) is melted by irradiation of laser light (6), so that the substrates (2, 3) are seal-bonded with each other.

Description

201034846 六、發明說明: 【韻~明戶斤屬之^技^彳标4員域^ 發明領域 本發明係關於具有密封材料層之玻璃構件和其製造方 法、及電子裝置和其製造方法。201034846 VI. Description of the Invention: [Technical Field] The present invention relates to a glass member having a sealing material layer, a method of manufacturing the same, an electronic device, and a method of manufacturing the same.

L·. J 發明背景 諸如.有機EL顯示 |§ (Organic Electro-Luminescence Display : OELD)、電漿顯示面板(PDP)、液晶顯示裝置(lCD) 等平板型顯示器裝置(FPD),係具有將形成發光元件的元件 用玻璃基板、與密封用玻璃基板呈相對向配置,再利用將 該等2片玻璃基板施行密封的玻璃封裝件,將發光元件施行 密封的構造(參照專利文獻1)。此外,諸如染料敏化太陽電 池之類的太陽電池(Dye-sensitized Solar Cell),亦有就利用2 片玻璃基板,將太陽電池元件(光電轉換元件)施行密封的玻 璃封裝件之適用進行檢討(參照專利文獻2)。 將2片玻璃基板間施行密封的密封材料,係有使用諸如 密封樹脂或密封玻璃。因為有機EL(OEL)元件等容易因水 分而劣化,因而有進展使用耐濕性等優異的密封玻璃。因 為利用密封玻璃施行的密封溫度係400〜600。(:左右,因而當 使用普通燒成爐施行加熱處理時,會導致OEL元件等電子 元件部的特性劣化。所以,有嘗試在2片玻璃基板周邊部所 設置密封區域間中,配置含有雷射吸收材的密封用玻璃材 料層,再對其施行雷射光照射’而對密封用玻璃材料層施 201034846 行加熱,使之炫·融而密封(參照專利文獻1、2)。 利用雷射照射施行的密封(雷射密封)係可抑制對電子 元件部的熱影響’但另一方面,就習知密封玻璃(玻璃介質) 而言,頗難充分提高密封層與破璃基板的接著強度,此情 形將成為導致諸如FPD、太陽電池等電子裝置的可靠度降 低肇因。雷射密封用密封玻璃(玻璃介質)係有就諸如pb〇系 玻璃粉末、Sn0-P205系玻璃粉末、Bi2〇3_B2〇3系玻璃粉末(參 照專利文獻3)、以及V205系玻璃粉末(參照專利文獻1)等的 使用進行檢討。該等之中,SnO-P2〇5系玻璃粉末係就從軟 化點低、且對環境與人體的影響較少之觀點,屬於雷射密 封用玻璃介質的較佳材料。 然而,習知僅單純將利用燒成爐施行加熱用的 SnO-P2〇5系玻璃介質,使用為雷射密封用玻璃介質而已, 並無法充分提高密封層與玻璃基板間的接著強度。例如專 利文獻4中有記載適用於在燒成爐中施行加熱的SnO-P2〇5 系玻璃介質,但此種SnO-P2〇5系玻璃組成,較難利用雷射 加熱處理充分提高對玻璃基板的接著強度。此情形可認為 係因為利用燒成爐施行加熱與雷射加熱中所施行的玻璃介 質的炫融條件等不同之緣故所致。 先行技術文獻 專利文獻 專利文獻1 :曰本專利特表2006-524419號公報 專利文獻2 :曰本專利特開2008-115057號公報 專利文獻3 :日本專利特開2〇〇8_〇598〇2號公報 201034846 專利文獻4 :日本專利特開2〇〇3_146691號公報 Γ韻^明内容_】 發明概要 發明欲解決之課題 本發明目的在於提供:能重現性 的玻璃其“〜a 室圭地“雷射密封時 的玻璃基板與㈣層間之接著強度的具有密封材料層之玻 璃構件及其製造方法,更提供藉由提高韻層與玻璃基板 間之接著強度’進而可提升密封可靠度與機械可靠度等的 電子裝置及其製造方法。 用以欲解決課題之手段 本發明態樣的具有密封材料層之玻璃構件,特徵在於 具備有«基板與密封材料層,該玻璃基板係具有密封區 域;該密騎料層係設置於前述玻板的前述密封區域 上’且由含有密封玻璃、低膨脹填充材及雷射吸收材的密 封用玻璃材料之燒成層構成;其中,前述密封玻璃依質量 比例計,含有:20〜68%的Sn〇、〇 5〜5%的%〇2及2〇〜4〇%的 ΡΛ ’且料密封㈣層巾的殘留碳量依比例計,係 在20〜lOOOppm範圍内。 本發明態樣的具有密封材料層之玻璃構件之製造方 法,特徵在於包括有:準備具有密封區域之玻璃基板的步 驟;在前述玻璃基板的前述密封區域上,將含有密封玻璃、 低膨脹填充材及雷射吸收材的密封用玻璃材料之糊劑施行 塗佈的步驟,且該密封玻璃依質量比例計,含有:2〇〜68% 的SnO、0.5〜5%的Sn02及20〜40%的卩2〇5 ;以及將前述糊劑 5 201034846 的塗佈層施行燒成,形成殘留碳量依質量比例計,係在 20〜lOOOppm範圍内的密封材料層的步驟。 本發明另一態樣的電子裝置,特徵在於具備有:第1玻 璃基板、第2玻璃基板、及密封層,該第1玻璃基板係具有: 具電子元件的元件形成區域、及設置於前述元件形成區域 外周側的第1密封區域;該第2玻璃基板係具有對應於前述 第1玻璃基板之前述第1密封區域的第2密封區域;該密封層 係將前述第1玻璃基板的前述第1密封區域、與前述第2玻璃 基板的前述第2密封區域之間,以在前述元件形成區域上設 置間隙之情況下進行密封的方式形成,且前述密封層係由 含有密封玻璃、低膨脹填充材及雷射吸收材的密封用玻璃 材料之 '熔融固接層構成;其中,前述密封玻璃依質量比例 計’含有:20〜68%的SnO、〇.5~5%的Sn02及20〜40%的P2〇5, 且前述密封層中的殘留碳量依質量比例計,係在 20~1000ppm範圍内。 本發明另一態樣的電子裝置之製造方法,特徵在於包 括有:準備第1玻璃基板的步驟,該第1玻璃基板係具有: 具電子元件的元件形成區域、及設置於前述元件形成區域 外周側的第1密封區域;準備含有第2密封區域與密封材料 層的第2玻璃基板之步驟,該第2密封區域係對應於前述第1 玻璃基板的前述第1密封區域;該密封材料層係形成於前述 第2密封區域上,且由含有密封玻璃、低膨脹填充材及雷射 吸收材的密封用玻璃材料之燒成層構成,且殘留碳量依質 量比例計,係在20〜lOOOppm範圍内,該密封玻璃依質量比 201034846 例計,含有:20〜68%的SnO、0.5〜5%的Sn02及20〜40%的 P205 ;在前述元件形成區域上形成間隙的情況下,隔著前 述密封材料層將前述第1玻璃基板與前述第2玻璃基板進行 積層的步驟;以及透過前述第2玻璃基板對前述密封材料層 施行雷射光照射,使前述密封材料層熔融,而形成將前述 第1玻璃基板與前述第2玻璃基板間進行密封之密封層的步 驟。 發明效果 根據本發明態樣的具有密封材料層之玻璃構件和其製 造方法,當雷射密封時,可重現性佳地提高玻璃基板與密 封層間的接著強度。所以,根據本發明態樣的電子裝置及 其製造方法,便可提高電子裝置的密封可靠度與機械可靠 度。 圖式簡單說明 第1圖係顯示本發明實施形態的電子裝置之構造的剖 視圖。 第2(a)〜(d)圖係顯示本發明實施形態的電子裝置之製 造步驟的剖視圖。 第3圖係顯示第2圖所示之電子裝置之製造步驟中使用 的第1玻璃基板的平面圖。 第4圖係沿第3圖中的A-A線的切剖圖。 第5圖係顯示第2圖所示之電子裝置之製造步驟中使用 的第2玻璃基板的平面圖。 第6圖係沿第5圖中的A-A線的切剖圖。 7 201034846 L 方包方式;j 用以實施發明之形態L·. J Background of the invention, such as an organic EL display | § (Organic Electro-Luminescence Display: OELD), a plasma display panel (PDP), a liquid crystal display device (LCD), etc. The glass substrate of the element for the light-emitting element and the glass substrate for sealing are disposed to face each other, and the light-emitting element is sealed by a glass package in which the two glass substrates are sealed (see Patent Document 1). In addition, a Dye-sensitized Solar Cell such as a dye-sensitized solar cell is also reviewed for the application of a glass package in which a solar cell element (photoelectric conversion element) is sealed by using two glass substrates. Refer to Patent Document 2). A sealing material for sealing between two glass substrates is used, for example, a sealing resin or a sealing glass. Since an organic EL (OEL) element or the like is easily deteriorated by moisture, a sealing glass excellent in moisture resistance or the like is used. Because the sealing temperature applied by the sealing glass is 400 to 600. (: The right and left, when the heat treatment is performed using a normal baking furnace, the characteristics of the electronic component such as the OEL element are deteriorated. Therefore, there is an attempt to arrange a laser between the sealing regions provided in the peripheral portion of the two glass substrates. The glass material layer for sealing of the absorbing material is irradiated with laser light, and the sealing glass material layer is heated by 201034846 to be dazzled, melted, and sealed (see Patent Documents 1 and 2). The seal (laser seal) suppresses the thermal influence on the electronic component portion. However, on the other hand, in the case of the conventional sealing glass (glass dielectric), it is difficult to sufficiently increase the bonding strength between the sealing layer and the glass substrate. The situation will be a cause of lowering the reliability of electronic devices such as FPDs, solar cells, etc. The sealing glass for laser sealing (glass medium) is such as pb-based glass powder, Sn0-P205-based glass powder, Bi2〇3_B2〇 Review of the use of the 3 series of glass powder (see Patent Document 3) and V205-based glass powder (see Patent Document 1), etc. Among these, SnO-P2〇5-based glass powder system It is a preferred material for a glass medium for laser sealing from the viewpoint that the softening point is low and the influence on the environment and the human body is small. However, it is conventionally known that only SnO-P2〇5 for heating by a baking furnace is used. The glass medium is used as a glass medium for laser sealing, and the bonding strength between the sealing layer and the glass substrate cannot be sufficiently improved. For example, Patent Document 4 describes that SnO-P2〇5 which is suitable for heating in a baking furnace is described. It is a glass medium, but it is composed of such a SnO-P2〇5-based glass, and it is difficult to sufficiently improve the adhesion strength to the glass substrate by laser heat treatment. This case is considered to be due to heating and laser heating in a firing furnace. The smelting conditions of the glass medium to be subjected to the singularity and the like are different. PRIOR ART DOCUMENT PATENT DOCUMENT Patent Document 1 Patent Application Patent Publication No. 2006-524419 Patent Document 2: Patent Publication No. 2008-115057 3: Japanese Patent Laid-Open Publication No. Hei 2 〇〇 〇 〇 〇 〇 2010 2010 34 34 34 34 34 34 34 34 34 34 34 34 34 34 ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ The object of the present invention is to provide a reproducible glass, a glass member having a sealing material layer and a method for producing the same, and a method for producing the same, and a method for producing the same. An electronic device capable of improving sealing reliability and mechanical reliability by improving the bonding strength between the rhing layer and the glass substrate, and a method of manufacturing the same. The method for solving the problem is a glass member having a sealing material layer according to an aspect of the present invention. Having a substrate and a sealing material layer having a sealing region; the dense riding layer is disposed on the sealing region of the glass plate and comprising a sealing glass, a low expansion filler, and a laser The sealing material is composed of a fired layer of a glass material for sealing; wherein the sealing glass contains: 20 to 68% of Sn 〇, 〇 5 to 5% of % 〇 2 and 2 〇 to 4 〇 % by mass ratio.残留 'And the material seal (4) layer of residual carbon in proportion to the ratio, in the range of 20 ~ 1000 ppm. A method of manufacturing a glass member having a sealing material layer according to an aspect of the present invention includes the steps of: preparing a glass substrate having a sealing region; and sealing glass, a low expansion filler material on the sealing region of the glass substrate And a step of applying a coating of a glass material for sealing a laser absorbing material, wherein the sealing glass comprises: 2 〇 to 68% of SnO, 0.5 to 5% of Sn02, and 20 to 40% by mass.卩2〇5; and the coating layer of the paste 5 201034846 is fired to form a sealing material layer having a residual carbon amount in a range of 20 to 1000 ppm by mass. An electronic device according to another aspect of the present invention includes: a first glass substrate, a second glass substrate, and a sealing layer, wherein the first glass substrate includes: an element forming region having an electronic component; and the component a first sealing region on the outer peripheral side of the region; the second glass substrate has a second sealing region corresponding to the first sealing region of the first glass substrate; and the sealing layer is the first surface of the first glass substrate The sealing region and the second sealing region of the second glass substrate are formed to be sealed while a gap is formed in the element forming region, and the sealing layer is made of a sealing glass or a low expansion filler. And the 'refining and fixing layer of the glass material for sealing the laser absorbing material; wherein the sealing glass according to the mass ratio' contains: 20 to 68% of SnO, 〇.5 to 5% of Sn02 and 20 to 40% P2〇5, and the amount of residual carbon in the sealing layer is in the range of 20 to 1000 ppm by mass. A method of manufacturing an electronic device according to another aspect of the present invention, comprising: a step of preparing a first glass substrate, the first glass substrate having: an element formation region having an electronic component; and a periphery of the component formation region a first sealing region on the side; a step of preparing a second glass substrate including a second sealing region and a sealing material layer, wherein the second sealing region corresponds to the first sealing region of the first glass substrate; and the sealing material layer It is formed on the second sealing region, and is composed of a fired layer of a sealing glass material containing a sealing glass, a low-expansion filler, and a laser absorbing material, and the residual carbon amount is in a range of 20 to 1000 ppm in terms of mass ratio. The sealing glass contains: 20 to 68% of SnO, 0.5 to 5% of Sn02, and 20 to 40% of P205 according to the mass ratio of 201034846; in the case where a gap is formed in the element forming region, the a step of laminating the first glass substrate and the second glass substrate in a sealing material layer; and irradiating the sealing material layer with laser light through the second glass substrate; The sealing material layer is melted to form the sealing step of the sealing layer between the first glass substrate and the second glass substrate step. EFFECT OF THE INVENTION According to the glass member having a sealing material layer and a method of manufacturing the same according to the aspect of the invention, when laser sealing, reproducibility improves the adhesion strength between the glass substrate and the sealing layer. Therefore, according to the electronic device of the present invention and the method of manufacturing the same, the sealing reliability and mechanical reliability of the electronic device can be improved. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view showing the structure of an electronic device according to an embodiment of the present invention. 2(a) to 2(d) are cross-sectional views showing the steps of manufacturing the electronic device according to the embodiment of the present invention. Fig. 3 is a plan view showing a first glass substrate used in the manufacturing steps of the electronic device shown in Fig. 2. Fig. 4 is a cross-sectional view taken along line A-A in Fig. 3. Fig. 5 is a plan view showing a second glass substrate used in the manufacturing steps of the electronic device shown in Fig. 2. Fig. 6 is a cross-sectional view taken along line A-A in Fig. 5. 7 201034846 L square package method; j used to implement the invention

以下’針對供實施本發明_態參照圖式進行說明。 第1圖係顯示本發明實施形態的電子裝置之構造的圖,第2 圖係顯示電子裂置之製造步驟的圖,第3圖至第6圖係顯示 用於前述電子裂置的玻璃基板之構造的圖。第丨圖所示電子 裝置1係構成諸如:OELD、PDP、lcd等的使用FPI)、OEL 元件·#發光元件的照明裝置,或諸如染料敏化太陽電池之 類的太陽電池等。 電子裝置1係具備有:含有具電子元件之元件形成區域 2a的第1玻璃基板(元件用玻璃基板)2、及第2玻璃基板(密封 用玻璃基板)3。該第1與第2玻璃基板2、3係由例如無鹼玻 璃或鈉鈣玻璃等構成。無鹼玻璃係具有35〜4〇xl(T7/°C左右 的熱膨脹係數。鈉鈣玻璃係具有85〜9〇xl(T7/°C左右的熱膨 脹係數 第1玻璃基板2的元件形成區域2a中,形成有配合電子 裝置1的電子元件,例如若屬於OELD或OEL照明便形成 OEL元件,若屬於PDP便形成電漿發光元件,若屬於LCD 便形成液晶顯示元件,若屬於太陽電池便形成染料敏化光 電轉換部等。諸如OEL元件之類的發光元件、或諸如染料 敏化光電轉換部之類的太陽電池元件等電子元件,係具備 有各種公知構造,不侷限於該等元件構造。本發明的電子 元件較佳係有機EL(OEL)元件或太陽電池元件。 第1玻璃基板2係如第3圖與第4圖所示,具有在元件形 201034846 成區域2a外周側設置的第1密封區域沘。第1密封區域2b係 設定呈包圍元件形成區域2a狀態。第2玻璃基板3係如第5圖 所示’具有第2密封區域3a。第2密封區域3a係對應第1密封 區域2b。 即,設定成當將第1玻璃基板2與第2玻璃基板3呈相對 向配置時,第1密封區域2b與第2密封區域3a可相對,且如 後述般地,成為密封層4的形成區域(對第2玻璃基板3而言 係成為密封材料層5的形成區域)。 第1玻璃基板2與第2玻璃基板3係依在元件形成區域2a 上形成間隙的方式呈相對向配置。第1玻璃基板2與第2玻璃 基板3間的空間係利用密封層4施行密封。即,密封層4係將 第1玻璃基板2的密封區域2b、與第2玻璃基板3的密封區域 3a之間,以在元件形成區域2a上設置間隙之情況下施行密 封的方式來形成。在元件形成區域2a中所形成的電子元 件,係利用由第1玻璃基板2、第2玻璃基板3及密封層4構成 的玻璃面板施行氣密密封。 费封層4係由一炼融固接層所構成,該炼融固接層係利 用雷射光6使在第2玻璃基板3的密封區域3a上所形成密封 材料層5熔融,而固接於第1玻璃基板2之密封區域化者。 即,在電子裝置1之製作所使用的第2玻璃基板3之密封區域 3a中,如第5圖與第6圖所示,形成有框狀密封材料層5。藉 由利用雷射光6的熱使在第2玻璃基板3的密封區域%中所 形成密封材料層5 ’如第2(c)與(d)圖所示,熔融固接於第1 玻璃基板2的密封區域2b ’便形成將第1玻璃基板2與第2玻 9 201034846 璃基板3間的空間(元件配置空間)施行密封之密封層4。 密封材料層5係含有密封玻璃(玻璃介質)、雷射吸收材 及低膨脹填充材的密封用玻璃材料燒成層。密封用玻璃材 料係在主成分的密封破璃中,摻合雷射吸收材與低膨脹填 充材。密封用玻璃材料視需要亦可含有除該等以外的添加 材料。密封用玻璃材料主成分的密封玻璃可使用依質量比 例計,含有:20-68%之Sn〇、〇_5〜5%之Sn02及20〜40%之P2〇5 組成的錫-磷酸系(SnO-P2〇5系)玻璃。密封用玻璃材料主成 分的密封玻璃含有量,係如後述,亦依存於雷射吸收材與 低膨脹填充材的摻合量,相對於密封用玻璃材料,較佳含 有40〜90體積。/。、更佳45〜8〇體積%。此外,密封玻璃(玻璃 介質)較佳係粉末狀,最大粒徑較佳係1〇〇μπι以下、更佳 50μηι以下。 在雷射密封用密封玻璃(麵介質)中,為控制破璃的炫 融溫度,較佳係玻璃本身並不會吸收雷射(屬於透明的破 璃)。藉由利用在密封玻璃中所添加之雷射吸收材料的種類 與量等而㈣著純溫度,钱可靠度佳地實施雷射密封 步驟。密封玻璃(玻璃介質)係為抑制對玻璃基板2、3的_ 擊,最好健融溫度屬於較低溫。且,財慮對環境與 體的影響’最好未含紹、飢等。錫魏纽璃介質便符合 此錄炎。 σ 本實施形態所使用的密封破璃(锡_麟酸系破瑪 中,SnO係為使朗呈赌點化的成分,在密封料中 20〜68質量域圍内。若如〇含有量未滿2()質量。/ : 201034846 的軟化溫度會變高’低溫下的密封趨於困難。且,發生為 使玻璃軟化而必需提高雷射光6輸出的必要,結果玻璃基板 2、3便容易發生裂痕等。若SnO含有量超過68質量%,便不 會玻璃化。SnO含有量較佳係設為3〇〜65質量%範圍内。The following description will be made with reference to the drawings for carrying out the invention. 1 is a view showing a structure of an electronic device according to an embodiment of the present invention, FIG. 2 is a view showing a manufacturing step of an electron split, and FIGS. 3 to 6 are views showing a glass substrate used for the above-described electronic cracking. Constructed map. The electronic device 1 shown in Fig. 1 constitutes an illumination device using an FPI, such as an OELD, a PDP, or an LCD, an OEL element, a light-emitting element, or a solar cell such as a dye-sensitized solar cell. The electronic device 1 includes a first glass substrate (glass substrate for a component) 2 and a second glass substrate (glass substrate for sealing) 3 including an element formation region 2a having an electronic component. The first and second glass substrates 2 and 3 are made of, for example, alkali-free glass or soda lime glass. The alkali-free glass has a thermal expansion coefficient of about 35 to 4 〇x1 (about T7/°C. The soda lime glass has 85 to 9 〇xl (a thermal expansion coefficient of about T7/°C is in the element formation region 2a of the first glass substrate 2). Forming an electronic component that cooperates with the electronic device 1. For example, if it belongs to OELD or OEL illumination, an OEL component is formed, if it belongs to a PDP, a plasma light-emitting component is formed, if it belongs to an LCD, a liquid crystal display component is formed, and if it belongs to a solar cell, a dye sensitive is formed. An electronic component such as a light-emitting element such as an OEL element or a solar cell element such as a dye-sensitized photoelectric conversion unit is provided with various known structures, and is not limited to the element structure. The electronic component is preferably an organic EL (OEL) element or a solar cell element. The first glass substrate 2 has a first sealing region provided on the outer peripheral side of the region 2a of the element shape 201034846 as shown in Figs. 3 and 4 . The first sealing region 2b is set to surround the element forming region 2a. The second glass substrate 3 has a second sealing region 3a as shown in Fig. 5. The second sealing region 3a corresponds to the first sealing region 2 In other words, when the first glass substrate 2 and the second glass substrate 3 are disposed to face each other, the first sealing region 2b and the second sealing region 3a are opposed to each other, and the sealing layer 4 is formed as will be described later. The formation region (the formation region of the sealing material layer 5 in the second glass substrate 3). The first glass substrate 2 and the second glass substrate 3 are arranged to face each other so as to form a gap in the element formation region 2a. The space between the first glass substrate 2 and the second glass substrate 3 is sealed by the sealing layer 4. That is, the sealing layer 4 is a sealing region 2b of the first glass substrate 2 and a sealing region 3a of the second glass substrate 3. The sealing is performed by providing a gap in the element forming region 2a. The electronic component formed in the element forming region 2a is made of the first glass substrate 2, the second glass substrate 3, and the sealing layer. The glass panel is configured to be hermetically sealed. The sealant layer 4 is composed of a refining and fixing layer which is formed on the sealing region 3a of the second glass substrate 3 by the laser light 6. The sealing material layer 5 is melted and fixed to the first glass In the sealing region 3a of the second glass substrate 3 used for the production of the electronic device 1, as shown in Figs. 5 and 6, a frame-shaped sealing material layer 5 is formed. The sealing material layer 5 ′ formed in the sealing region % of the second glass substrate 3 is melt-fixed to the first glass substrate 2 as shown in the second (c) and (d) by the heat of the laser light 6 . The sealing region 2b' forms a sealing layer 4 that seals a space (component arrangement space) between the first glass substrate 2 and the second glass substrate 9 201034846. The sealing material layer 5 contains a sealing glass (glass medium). A glass material fire-extinguishing layer for sealing a laser absorbing material and a low-expansion filler. The sealing glass material is blended with the laser absorbing material and the low expansion filler in the sealing glass of the main component. The glass material for sealing may contain an additive material other than these as needed. The sealing glass of the main component of the sealing glass material may be a tin-phosphate type consisting of 20 to 68% of Sn, 〇5 to 5% of Sn02, and 20 to 40% of P2〇5. SnO-P2〇5 series) glass. The sealing glass content of the main component of the glass material for sealing is preferably 40 to 90 by volume with respect to the glass material for sealing, depending on the amount of the laser absorbing material and the low-expansion filler. /. More preferably 45 to 8 vol%. Further, the sealing glass (glass medium) is preferably in the form of a powder, and the maximum particle diameter is preferably 1 μm or less, more preferably 50 μm or less. In the sealing glass for laser sealing (face medium), in order to control the blooming temperature of the glass, it is preferred that the glass itself does not absorb the laser (which is a transparent glass). The laser sealing step is performed with good reliability by utilizing the type and amount of the laser absorbing material added to the sealing glass, and the like. The sealing glass (glass medium) is intended to suppress the impact on the glass substrates 2, 3, and the temperature is preferably lower. Moreover, the impact of financial considerations on the environment and the body is best not included in the hunger, hunger and so on. The Siwei Nuori medium is in line with this record. σ The sealing glass used in the present embodiment (SinO is a component that makes the gambling point, and is in the range of 20 to 68 in the sealing material. Full 2 () quality. / : 201034846 The softening temperature will become higher. 'The sealing at low temperatures tends to be difficult. Moreover, it is necessary to increase the output of the laser light 6 in order to soften the glass. As a result, the glass substrates 2, 3 are prone to occur. If the content of SnO exceeds 68% by mass, it will not be vitrified. The content of SnO is preferably in the range of 3 〇 to 65% by mass.

Sn〇2係為使玻璃呈安定化的成分,在密封玻璃中含有 0_5〜5質量%範圍内。若sn〇2含有量未滿〇.5質量%,則玻璃 安定性會降低、容易發生失透明(devitrification),在玻璃製 造中容易混入失透明物。此外,在雷射加熱時,於呈軟化 熔融的玻璃中會有Sn02分離、析出,而損及流動性,導致 氣密性容易降低低。若Sn〇2含有量超過5質量%,則在玻璃 製造時容易從熔融中析出Sn〇2,無法獲得安定的玻璃。若 考慮玻璃的安定性與流動性等因素,Sn〇2含有量較佳設為 1〜3.5質量%範圍。 ΡΖ〇5係為形成玻璃骨架用的成分,在密封玻璃中含有 20〜40質量%範圍内。若p2〇5含有量未滿2〇質量。/。,便不會 玻璃化。若P2〇5含有量超過4〇質量。/。,便會有誘發填酸鹽玻 璃特有缺點之耐候性惡化的可能性。若考慮玻璃的安定性 與耐候性等,P2〇5含有量較佳係設為25〜40質量%範圍。 此處’玻璃介質中的SnO與Sn02質量比係可依如下進 行求取。首先,將玻璃介質(低熔點玻璃粉末)進行酸分解 後,利用ICP發光分光分析測定玻璃介質中所含Sn原子的總 里接著,因為Sn2+(SnO)係由經酸分解物利用蛾滴定法進 行求取,因而將從Sn原子總量中扣減掉此處所求得的Sn2+ 量’便可求得Sn4+(Sn02)。 11 201034846 依上述3成分所形成的玻璃係玻璃轉移點較低,適用為 低溫用密封材料’但亦可含有例如:Si02、ZnO、B2〇3、Sn〇2 is a component which stabilizes glass, and is contained in the sealing glass in the range of 0_5 to 5% by mass. When the content of sn 〇 2 is less than 5% by mass, the glass stability is lowered, devitrification is likely to occur, and the opaque substance is easily mixed in the glass production. Further, when the laser is heated, Sn02 is separated and precipitated in the glass which is softened and melted, and the fluidity is impaired, so that the airtightness is easily lowered. When the content of Sn 〇 2 exceeds 5% by mass, Sn 〇 2 is easily precipitated from the molten glass during production, and stable glass cannot be obtained. The Sn2 content is preferably in the range of 1 to 3.5% by mass in consideration of factors such as stability and fluidity of the glass. ΡΖ〇5 is a component for forming a glass skeleton and is contained in the range of 20 to 40% by mass in the sealing glass. If p2〇5 contains less than 2〇 mass. /. It will not be vitrified. If the content of P2〇5 exceeds 4〇 mass. /. There is a possibility that the weather resistance of the characteristic defects of the acid-filled glass is deteriorated. When the stability and weather resistance of the glass are considered, the P2〇5 content is preferably in the range of 25 to 40% by mass. Here, the mass ratio of SnO to Sn02 in the glass medium can be determined as follows. First, after the acid decomposition of the glass medium (low-melting glass powder), the total amount of Sn atoms contained in the glass medium is measured by ICP emission spectrometry, because Sn2+ (SnO) is carried out by the molybdenum titration method using the acid decomposition product. Therefore, Sn4+(Sn02) can be obtained by subtracting the amount of Sn2+ obtained here from the total amount of Sn atoms. 11 201034846 The glass-based glass formed by the above three components has a low transfer point and is suitable for a low-temperature sealing material ‘but may contain, for example, SiO 2 , ZnO, B 2 〇 3,

Al2〇3、W03、Μο〇3、Nb2〇5、Ti02、Zr〇2、Li2〇、Na2〇、 K20 ' Cs20、MgO、CaO、SrO ' BaO等任意成分。但,若 各成分的個別含有量、或任意成分的合計含有量過多則 玻璃便會呈不安定,在玻璃製造時會發生失透明,且即便 未達失透明程度,但玻璃結晶化傾向仍會過於強烈,導致 玻璃在加熱途中,未呈軟化流動便結晶化,會有無法與玻 璃基板2、3進行密接的可能性。 就從此點觀之,上述任意成分的合計含有量較佳設為 15質量%以下。任意成分中’ Si〇2係形成玻璃骨架的成分’ 含有量較佳設為10質量。/❶以下。此外,最好以以〇2為必要成 刀且含有0.1〜5質量%。諸如:ZnO、B2〇3、AI2O3、W〇3、Al2〇3, W03, Μο〇3, Nb2〇5, Ti02, Zr〇2, Li2〇, Na2〇, K20 'Cs20, MgO, CaO, SrO 'BaO and other optional components. However, if the individual content of each component or the total content of any component is too large, the glass will be unstable, and the glass will be deficient in the production of glass, and even if the degree of transparency is not lost, the tendency of glass crystallization will still be If the glass is too strong, the glass will crystallize without being softened, and there is a possibility that the glass substrates 2 and 3 cannot be adhered to each other. From this point of view, the total content of the above optional components is preferably set to 15% by mass or less. In the optional component, the content of the component of the 'Si〇2-forming glass skeleton' is preferably set to 10 mass. /❶The following. Further, it is preferable to form a knife with 〇2 as necessary and to contain 0.1 to 5% by mass. Such as: ZnO, B2〇3, AI2O3, W〇3,

Mo〇3、Nb205、Ti〇2、Zr〇2、Li20、Na20、K20、Cs20、Mo〇3, Nb205, Ti〇2, Zr〇2, Li20, Na20, K20, Cs20,

MgO、CaO、SrO、BaO等係屬於使玻璃呈安定化的成分, 各自的含有量分別較佳設定在10質量%以下。若各成分的 個別含有量超過1〇質量。/。,便會有在玻璃製造時發生失透 明情形’且會有玻璃結晶化傾向趨強的可能性。 上述任意成分中,諸如:Zn〇、B203、Al2〇3、W03、 M0O3等係除玻璃安定化之外,尚具有使玻璃熱膨脹係數降 低的效果。較佳係以ZnO為必要成分並含有2〜6質量%。此 外’諸如:Nb205、Ti02、Zr02等係具有提升化學耐久性的 效果。諸如:Li2〇、Na20、K20、Cs2〇等係具有降低玻璃 的軟化點’進而提升流動性的效果。 12 201034846 諸如:MgO、CaO ' SrO、BaO等係具有調整破丨离的點 - 度,以及調整熱膨脹係數的效果。該等各成分的含有量係 依如上述,任意成分的合計含有量較佳設為不超過15質量 %範圍、更佳在10質量%以下。 密封用玻璃材料係含有低膨脹填充材。低膨脹填充材 較佳係使用從例如:氧化矽、氧化鋁、氧化锆、矽醆锆' 菫青石、磷酸锆系化合物、鈉鈣玻璃及硼矽酸玻螭所構成 0 群組中至少選擇一種。磷酸锆系化合物係可舉例如. (ZrO)2P2〇7、ΑΖΓ2(ρ〇4)3(α係從Na、〖及以所構成群紐中至 少選擇一種)、NbZr2(P04)3、Zr2(W〇3)(P〇4)2、或該等的複 合化合物。「低膨脹填充材」係指具有較密封用玻螭材料主 成分的密封玻璃更低之熱膨脹係數的材料。 低膨脹填充材的含有量係依密封玻璃的熱膨脹係數, 接近破璃基板2、3的熱膨脹係數之方式適當設定。低膨脹 填充材係依照密封玻璃與玻璃基板2、3的熱膨脹係數而 〇 異,但相對於密封用玻璃材料,較佳含有1〜50體積%範圍 内。當玻璃基板2、3係利用無鹼玻璃(熱膨脹係數: 35〜40xl(r7/°c)形成的情況,較佳係添加較多量(例如3〇〜5〇 體積%範圍)的低膨脹填充材。當玻璃基板2、3係由鈉舞破 璃(熱膨脹係數:85〜9_力。〇形成的情況,較佳係添加較 少量(例如15〜40體積%範圍)的低膨脹填充材。此外,低膨 脹填充材較佳係粉末狀,最大粒徑較佳係1〇〇μηι以下、更 佳50μιη以下。 密封用破璃材料係更進一步含有雷射吸收材。雷射吸 13 201034846 收材係使用諸如:從Fe、HCQ、NiACuti^u 少-種金屬、或含前述金屬的氧化物等化合物。雷射吸收 材的含有量係相對於密封用破璃材料,較佳設為0.卜10體 積。/。範圍内。若雷射吸收材的含有量未狀i_%,在雷 射照射時便無法使密封㈣層5充分_。若雷射吸收材含 有里超過10體積%,在雷射照射時會有在與第2玻璃基板3 間的界面附近出現局部性發熱,導致第2玻璃基板3發生斷 裂等It形或者⑨封肖麵材魏料的流祕降低,導 致與第1玻璃基板2間的接著性降低之可能性。雷射吸收材 3有量較佳-X為1〜9體積%範圍内。此外,雷射吸收材較佳 係粉末狀’最大粒徑較佳係5〇μιη以下、更佳2〇哗以下。 依如上述,本實施形態所使用的錫-璘酸系玻璃介質, 因為具有透明且玻璃轉移點較低等特性,因而剌為低温 加熱用密封材料。S,當對密封材料層5施行雷射光6照射 而形成密封層4時,僅單純將錫_磷酸系玻璃介質(密封玻璃) 使用於雷射密封,並無法充分提高玻璃基板2、3與密封層4 間之接著強度。此現象可認為因為利用燒成爐施行加熱與 利用雷射加熱施行的情況,就玻璃介質的熔融條件等會有 所不同所致。 玻璃基板與玻璃介質間之接著強度,係根據該等的熱 膨脹差所造成的殘留應變、以及玻璃基板與玻缡介質間的 界面反應。一般使用燒成爐施行加熱的情況,將無關於玻 璃基板與玻璃介質的種類,均會在玻璃基板與破璃介質(密 封層)間的界面形成反應層,利用化學鍵結將可提高接著強 201034846 度。換言之,使用由燒成爐施行加熱的密封步驟,因為有 在接著界面形成反應層的時間充裕,因而可獲得充分的接 著強度。 另一方面,使用雷射加熱的密封步驟,係利用沿框狀 雄、封材料層5,一邊施行雷射光6掃描,一邊進行照射而實 加。密封材料層5將從雷射光6所照射到的部分開始依序溶 融,且會隨著雷射光6的照射完成而急冷固化。依此的話, 在雷射密封步驟中並無法充分獲得反應層的形成時間。因 而,僅依靠具有SnO、Sn〇2及he»5等3成分系組成的玻璃介 貝,在雷射达、封時便無法充分提局玻璃基板2、3與密封層4 間之接著強度。 在使用雷射加熱的密封步驟中,為能在玻璃基板2、3 與密封層4的接著界面上形成反應層,使密封材料層(密封 用玻璃材料的燒成層)5中殘留適量碳係屬有效。即,在使 用錫-磷酸系玻璃介質形成的密封材料層5中所殘留的碳, 係具有還原劑的機能。所以,即便係短時間實施局部性玻 璃介質熔融固化的雷射密封,藉由密封材料層5中的殘留碳 而將氧化錫施行還原,便可提升玻璃基板2、3、與錫_磷酸 糸玻璃介質間的反應性。 即,在雷射照射時,藉由將錫-鱗酸系玻璃介質中的氧 化錫(特別係容易還原的SnO)利用殘留碳進行還原,便可將 部分的氧化錫變成金屬錫(Sn)。金屬錫㈣係具有容易擴散 於玻璃基板2、3中的性質。所以,藉由使在經#射光6照射 而熔融的密封材料層5中存在適量金屬錫(Sn),即便依短時 15 201034846 間施行玻璃介質熔融固化的雷射密封步驟,仍可在接著界 面形成反應層。所以,雷射密封時,便可提高玻璃基板2、 3、與錫-磷酸系玻璃介質(密封層4)間之接著強度。 在密封材料層5中殘留的碳量(密封材料層5的殘留碳 量)依質量比例設定為20〜l〇〇〇ppm範圍。若密封材料層$的 殘留碳量未滿20Ppm,則作為還原劑的能力嫌不足,無法充 分獲得上述氧化錫的還原效果。即,無法充分生成金屬錫, 結果便無法充分提南玻璃基板2、3、與密封層4間之接著強 度。另一方面,若密封材料層5的殘留碳量超a1000ppm, 則金屬錫的生成量將過剩,玻璃的電阻值降低,導致無法 確保密封層4的絕緣性。此情形將成為各種不良情況的發生 肇因。 即,在第1玻璃基板2的密封區域2b中,形成有將元件 形成區域2a中所形成之電子元件的電極拉出於外部的配 線。因為過剩的殘留碳會降低密封層4的絕緣性,因而根據 此種密封層4 ’會有在第1玻璃基板2上所形成之配線間發生 紐路等不良情況的可能性。考慮玻璃基板2、3與密封層4間 之接著強度的提升效果、密封層4的絕緣性維持等,密封材 料層5的殘留碳量依質量比例計,更佳設為30〜50〇ppm範 圍。另外’關於密封材料層5中的殘留碳量的控制方法,容 後述。 密封材料層5的厚度T1係配合第1玻璃基板2與第2玻璃 基板3間之要求間隙(即密封層4的厚度T2)而設定。本實施 形態的雷·, 电十裝置1及其製造步驟,特別係有效於密封材料層 201034846 5厚度T1設定達1〇μηι以上的情況。且,更佳將密封材料層5 的厚度Τ1設為10〜ΙΟΟμιη。當對具有此種厚度τι的密封材料 層5照射雷射光6而施行密封時,若根據本實施形態,仍可 提升玻璃基板2、3、與密封層4間之接著強度,更可提升玻 璃面板的氣密密封性等。 另外’密封材料層5中的殘留碳並不僅偈限於使用錫-磷酸系玻璃介質的情況,就使用其他組成的玻璃介質(密封 玻璃)(例如鉍系(BisOrBiO3系)玻璃介質)的情況亦屬有 效。即,當使用依質量比例計含有:70〜90%之Bi203、1~2〇% 之ZnO、及2〜12°/。之ΒΛ的玻璃介質,形成密封材料層的情 況,亦是藉由使適量碳殘留,而可期待產生與使用錫_填酸 系玻璃介質的情況相同的效果。 由如上述密封用玻璃材料所構成的密封材料層5,如下 述,係形成於第2玻璃基板3的密封區域3&上。首先,將含 有您封玻璃(錫-磷酸系玻璃介質)、雷射吸收材及低膨脹填 充材的密封用玻璃材料,與龍(vehide)相混合,而調製為 密封材料糊劑。 載體係可使用例如:將諸如甲基纖維素、乙基纖維素、 叛甲基纖維素、氧乙基纖維素m維素、丙基纖維素、 确化纖維素料m,溶解於諸如松油醇、丁基卡必醇醋酸 醋、乙基卡必醇醋酸醋等溶劑中者,或例如:將諸如(甲基) 丙晞酸甲醋、(甲基)丙稀酸乙酿、(甲基)丙稀酸丁醋、甲基 丙烯酸-2-羥乙酯等丙烯酸系榭t 于树月曰,溶解於諸如甲乙酮、松 油醇、丁基卡必醇乙酸酯、乙農+ 卞必醇乙酸酯等溶劑中者。 17 201034846 ^封材料__度係只要配合㈣在玻璃基板3上 之、所對應的黏度便可’可姻樹脂(黏結劑成幻與溶劑 的比例、密封用玻璃材料與裁㈣比例進行調整。在密封 材科糊射亦可諸如消_、分㈣般地,在玻璃糊劑添 加公知添加物。密封材料_的調製可採較用了具備授 摔翼的旋轉式混合機、料機、球純_公知方法。 在第2玻璃基板3的在、封區域仏施行密封材料糊劑塗 佈,經使其餘,便形成密封材料糊劑的塗佈層。密封材 料糊劑係使用例如網版印刷、凹版印刷等印刷法在第2密封 區域3a上施行塗佈、或者使用點膠機等沿第2密封區域域 行塗佈。密封材料糊劑的塗佈層係依例如12叱以上的溫度 施打10分鐘以上的賴。乾燥步難為將塗佈層内的溶劑 除去而實施。若塗佈層内有溶劑殘留,在後續的燒成步驟 中,便會有無法充分去除黏結劑成分的可能性。 將上述密封材料糊劑的塗佈層施行燒成,便形成密封 材料層5。燒成步驟係首先將塗伟層加熱至密封用玻璃材料 主成分的密封破璃(玻璃介質)之玻璃轉移點以下的溫度,經 將塗佈層内的黏結劑成分除去後,再加熱至密封玻璃(玻璃 介質)的軟化點以上的溫度,將密封用玻璃材料熔融並熔執 於玻璃基板3上。依此便形成由密封用玻璃材料的燒成層所 構成密封材料層5。密封材料糊劑的塗佈層燒成步驟,較佳 係依200〜500°C的溫度範圍實施、更佳係依230〜430°C的溫 度範圍實施。 此種岔封材料層5的形成步驟中,藉由採用下述方法: 18 201034846 (1)將有機物或碳等當作碳源並使之存在於密封玻璃(或密 ' 封用玻璃材料)中,且使源自碳源的碳其中一部分殘留; 使密封材料糊劑中的黏結劑成分(有機樹脂)、或源自有機溶 劑的碳其中一部分殘留等方法,對密封材料層5的殘留碳量 進行控制。另外,除該等以外的方法,在能將密封材料層5 的殘留碳量,依質量比例設為20〜lOOOppm範圍的方法前提 下,均可適用。 〇 關於上述(1)的方法,係在例如粉碎玻璃之際,添加諸 如醇等有機物來當作碳源。該方法係因為醇等亦具有粉碎 助劑的作用,因而亦可提高玻璃的粉碎效率。在密封坡續 - 中所添加的碳源並不僅偈限於有機物’亦可為諸如碳黑或 . 石墨等碳。即便相對於密封玻璃,將有機物或碳等碳源的 添加量設為一定,但因為殘留碳量仍會依照燒成條件而變 化,因而預先求取所添加之碳源經燒成後會有何種程度殘 留的相關資料。再根據此資料對密封材料層5的殘留碳量進 〇 行控制。此外,亦可將碳源添加量設為一定,並使燒成條 件(溫度、時間)產生變化,而對殘留碳量進行控制。 (2)的方法係在密封玻璃中未添加碳源’使源自施行糊 化時所使用的黏結劑成分(有機樹脂)或有機溶劑的碳其中 一部分殘留之方法。此情況,載體的組成、施行糊化時的 密封用玻璃材料與載體之組成比、燒成條件、特別係從樹 脂進行燃燒、分解的溫度區域起至密封玻璃進行軟化的溫 度範圍中,升溫速度與保持時間均屬重要事項。關於密封 柯料糊劑製作時所使用的載體,使用(1)之方法的情況並無 19 201034846 特別限制’但當❹(2)之枝的情況,較佳係使㈣石肖化 纖維素洛解於諸如:松油醇、了基卡必醇祕@旨、乙基卡 必醇醋酸酯等有機溶劑中者。 (2)之方法所使㈣載體,較佳係使0.5〜5質量%頌化纖 維素’溶解於從松_、τ基卡必賴義及乙基卡必醇 醋酸醋所構成群組中選擇的—種有機溶劑、或二種以上混 口冷劑95〜99.5質量%者。且,關於密封用玻璃材料的糊化, 較佳係將85〜93質量%密_玻猜料、與7〜15質量%載體 進行此β而β周I成*封材料糊劑。藉由使用此種載體或密 封材料糊劑,便可提升密封材料層5的殘留碳量控制性。 關於密封材料糊劑的塗佈層燒成步驟,一般係依不會 使&'封用玻璃材料還原的方式’採用可使樹脂成分完全燃 k、分解的條件。具體而言,藉由在樹脂進行燃燒、分解 的度以上,且未達密封玻璃進行軟化流動的溫度之溫度 區域中,使升溫速度變慢,且保持丨〜15小時左右,便促進 樹脂的燃燒、分解。當此用(2)之方法的情況,藉由對樹脂 的燃燒、分解步驟進行控制,便可使適量的碳殘留於密封 材料層5中。 依如上述,載體中的樹脂成分較佳係硝化纖維素。硝 化纖維素係依200〜250°C範圍的溫度進行燃燒、分解。本實 施形態之密封玻璃進行軟化流動的溫度係260〜450。(:範 圍。因而,200〜450。(:的溫度範圍便屬重要。如上述具有殘 留碳的密封材料層5係藉由對200〜450°C的升溫速度進行控 制便可獲得。具體而言,較佳係在200〜450。(:溫度範圍内依 20 201034846 10〜35°C/min速度進行升溫。利用批次爐等進行燒成時,為 - 使爐内溫度呈均勻,當保持在200〜45(TC溫度範圍的情況, 較佳係將保持時間設為未滿2〇分鐘。藉由使用此種條件, 便可將密封材料層5的殘留碳量控制於所需範圍内。 其次,如第2(a)圖所示,使用第2玻璃基板3(其係具有 密封材料層5)、與第1玻璃基板2(其係具有元件形成區域 2a,該兀件形成區域仏係具有另行製作的電子元件),製作 ❾ 例如0ELD、PDP、LCD等使用FPD、OEL元件的照明裝置、 或諸如染料敏化太陽電池之類的太陽電池等電子裝置卜即 如第2(b)圖所示,將第丨玻璃基板2與第2玻璃基板3,依具有 几件形成區域2a之一面、與具有密封材料層5之一面呈相對 _ 向狀恕進行積層。在第1玻璃基板2的元件形成區域2a上, 根據密封材料層5的厚度形成間隙。 其次,如第2(c)圖所示,透過第2玻璃基板3對密封材料 層5照射雷射光6。雷射光6係沿框狀密封材料層5一邊進行 Q 掃描邊照射。雷射光6並無特別的限定,可使用來自諸如 半導體雷射、碳酸氣體雷射、準分子雷射、YAG雷射、HeNe 雷射等的雷射光。雷射光6的輸出係配合密封材料層5的厚 度等而適當設定,宜設定為例如2〜15〇w範圍内。若雷射輸 出未滿2W,便會有無法將密封材料層5熔融的可能性·,反 之,若超過15〇w,則玻璃基板2、3便容易發生裂痕、斷裂 等情形。雷射光的輸出較佳係5〜100W範圍内。 密封材料層5係從被沿其進行掃描的雷射光6所照射部 分開始依序熔融,若雷射光6的照射結束,便急冷固化,而 21 201034846 固接於第1玻璃基板2。然後,藉由圍繞密封材料層5全周進 行雷射光6照射,便如第2(d)圖所示,形成將第丨玻璃基板2 與第2玻璃基板3間施行密封的密封層4。因為使用密封玻璃 (錫-磷酸系玻璃介質)的密封材料層5係根據殘留碳而提升 與玻璃基板2間之反應性,因而即便是在利用雷射光6照射 所施行的短時間熔融固化步驟(密封步驟)中,仍可提升玻璃 基板2與密封玻璃間之接著性。所以,可提高玻璃基板2、3、 與密封層4間之接著強度。 依此的話,便製成利用由第礎璃基板2、第2玻璃基板 〇 3及密封層4所構成之玻璃面板,將在元件形成區域上所 形成之電子元件施行氣密密封的電子裝置卜另外内部施 行氣密密封的玻璃面板並不僅侷限於電子裝置丨,亦可應用 於例如電子科的㈣體(難)、或如制真^朗之_ . 玻璃構件(建材等)。 電子裝置1的可靠度係依存於諸如由密封層*所施行的 氣密密封性、或玻璃基板2、3與密封層4間之接著強度等。 根據本實施形態’因為可提高氣密密封性與接著強度目 〇 而可獲得可靠度優異的電子裝置!。此處,密封材料又層艸 的石炭即便在雷射密封後亦會殘留。所以,使用殘留礙量依 質量比例計為20〜1_鹏範_密封材料層5所形成的密 封層4 ’即便碳的存在形態有變化,―碳量本身仍與密封 材料層5同等。所以’根據殘留碳量依質量比例計為 2〇〜1〇〇〇购範圍的密封層4,便可提升電子裝置㈣密封可 靠度與機械可靠度等。 22 201034846 實施例 其次,針對本發明的具體實施例及其評估結果進行敫 述。另外,以下的說明並非將本發明予以限定,亦讦在遵 循本發明之主旨的形式下進行改變。 (實施例1) 製備依質量比例計,含有:SnO : 55.7%、Sn02: 3.1%、 P2〇5 : 32.5%、ZnO : 4·80/〇、Al2〇3 : 2.3%、Si02 : 1.6%組 成的錫-磷酸系玻璃介質、作為低膨脹填充材的磷酸鍅 ((Zr0)2P207)粉末、以及依質量比計含有:Fe203 : 35%、 0203: 35%、Co203: 20%、MnO: 10%組成的雷射吸收材。 此外’將作為黏結劑成分的硝化纖維素4質量%,溶解於由 丁基卡必醇醋酸酯所構成溶劑96質量%中,製得載體。 錫-磷酸系玻璃介質係依如下進行製作。首先,依成為 上述成分比的方式,將玻璃施行溶解而製得碎玻璃。接著, 將碎玻璃利用氧化銘製球磨機施行粉碎。此時,粉碎助劑 係相對於玻璃lkg,添加2cc的乙醇。接著,利用氣流分級 機依最大粒徑為8μιη的方式進行分級,便獲得目標之錫_礙 酸系玻璃介質。 其次,將上述錫-磷酸系玻璃介質56體積%、磷酸锆粉 末42體積%、及雷射吸收材2體積%進行混合,製得密封用 玻璃材料(熱膨脹係數:47x10 7/°C)。將該密封用玻璃材料 80質量%與載體20質量%進行混合’便調製得密封材料糊 劑。接著’在由無驗玻璃(熱膨脹係數:38χ10·7/°〇構成的 第2玻璃基板(尺寸:90x90x〇.7mmt)外周區域,將密封材料 23 201034846 糊劑利用網版印刷法施行塗佈(線寬:500μιη)後’依120。匸 Χίο分鐘的條件施行乾燥。 將經乾燥後的密封材料糊劑塗佈層,依升溫速度5。〇 /min升溫至250。(:,在該溫度下保持4〇分鐘而施行脫黏結劑 處理後,依升溫速度5°(2/πΰη升溫至430°C,在該溫度下保 持10分鐘而施行燒成。依此便形成膜厚丁丨為⑼卜爪的密封材 料層。密封材料層的殘留碳量係200ppm。另外,密封材料 層的殘留碳量係使用碳•硫分析裝置EMIA_32〇v(商品 名,堀場製作所公司製)進行測定的值。其他實施例亦同。 將具有上述密封材料層的第2玻璃基板、與具有元件形 成區域(已形成OEL元件的區域)的第丨玻璃基板(由與第2玻 璃基板同組成、同形狀的無鹼玻璃所構成之基板)進行積 層。接著,透過第2玻璃基板對密封材料層,將波長94〇nm、 輸出25W的雷射光(半導體雷射)依1〇_/s掃描速度進行照 射,藉由使密封材料層㈣並急冷固化,便將第城璃基板 與第2玻璃基板施行密封。另外,針對密封層的殘留碳量, 經如同密封材料層般的進行同樣測定,確認為與密封材料 層的殘留碳量同等。在後麟性評財,提驗此方式利 用玻璃面板對元件形成區域施行密封的電子裝置。 (實施例2〜4) 除將錫-碟醆系玻璃介質的組成、低膨張填充材、雷射 吸收材的種類、該等的調配比,變更為表丨所示條件之外, 其餘均如同實施例他的調製密封材料糊劑。除使用該等密 封材料糊劑,且將密封材料層_留碳量控財法變更為 24 201034846 下示方法之外,其餘均如同實施例1,實施針對第2玻璃基 板之密封材料層的形成、第1玻璃基板與第2玻璃基板的雷 射畨封。在後述特性評估中,提供依此方式利用玻璃面板 對兀件形成區域施行密封的電子裝置。_密封材料層的 殘留碳量,實施例2係45〇ppm、實施例3係70ppm、實施例4 係850ppm。殘留碳量係如同實施例1般的進行測定。 實施例2中,依如下述,對密封材料層的殘留碳量進行 控制。當將錫-磷酸系玻璃介質、低膨脹填充材及雷射吸收 材進行混合,而製作密封用玻璃材料之際,將摻合入作為 還原劑的&黑。碳黑的摻合量仙對於密封用玻璃材料設 為5〇〇PPm。除使用此種密封用玻璃材料之外,其餘均如同 實施例1般的形成密封材料糊劑的塗佈層(依12(rcxi〇分鐘 施行乾燥)。將經乾職的密封㈣糊劑塗佈層,依升溫速 度8°C/min升溫至230它,在該溫度下保持⑼分鐘而施行脫 黏結劑處理後,再依升溫速度8t/min升溫至43〇t,在該 溫度下保持10分鐘而進行燒成。 實施例3中’依如下進行密封材料層的殘留碳量控制。 如同實施例卜形成密封材料糊劑的塗佈層。密封材料糊劑 係將密封用玻璃材料8 4質量%與載體丄6 f量%相混合而調 製。塗佈層係依120°Cxl〇分鐘的條件施行乾燥。另外,在 碎玻璃施行粉碎時並未使用乙醇。將經乾燥後的密封材料 糊劑塗佈>#,依升溫速度25°c/min升溫至43〇°c,在該溫度 下保持1G分鐘*進行燒成。實施例4係依照如同實施例^ 同的條件進行殘留碳量控制。此時,碳黑的摻合量係相對 25 201034846 於密封用玻璃材料設為lOOOppm。實施例2〜4中,密封層的 殘留碳量係與密封材料層同等。 (實施例5〜6) 製備表1所示之錫-填酸系玻璃介質、低膨脹填充材及 雷射吸收材,藉由將該等依表1所示組成比進行混合,而分 別製得密封用玻璃材料。將該等密封用玻璃材料82質量% 與如同貫施例1的載體18質量%進行混合,而調製得密封材 料糊劑。接著’在由鈉鈣玻璃(熱膨脹係數:87xi〇_7/°c)構 成的第2玻璃基板(尺寸.10〇xl〇〇x〇.55mmt)外周區域,將 各個密封材料糊劑利用網版印刷法施行塗佈(線寬:5〇〇gm) 後’再依120°CX10分鐘的條件施行乾燥。 將上述密封材料糊劑的塗佈層(乾燥後)分別施行燒 成’而分別形成膜厚T1為60μηι的密封材料層。關於密封材 料層的殘留碳量控制方法,實施例5係如同實施例3,實施 例6係如同實施例1。實施例5的密封材料層殘留碳量係 1 OOppm,實施例6係 150ppm。 接著,將具有密封材料層的第2玻璃基板、以及具有元 件形成區域(已形成OEL元件的區域)的第丨玻璃基板(由與 第2玻璃基板同組成、同形狀的鈉鈣玻璃構成之基板)施行 積層。接著,透過第2破璃基板對密封材料層,將波長 940nm、輸出40W的雷射光(半導體雷射)依5mm/s掃描速度 進行照射,藉由將密封材料層熔融並急冷固化,便將第1玻 璃基板與第2玻璃基板施行密封。_層的殘时量係與密 封材料層同等。在後述特性評估巾,提供依此方式利用玻 26 201034846 璃面板對元件形成區域施行密封的電子裝置。 (比較例1) 使用與實施例1同組成的錫·磷酸系玻璃介質 貝 如同實 施例1般的實施密封用玻璃材料的製作、密封好 ^ 4料糊劑的調MgO, CaO, SrO, BaO, and the like are components which stabilize the glass, and the respective contents are preferably set to 10% by mass or less. If the individual content of each component exceeds 1 〇 mass. /. There is a possibility that the lens will be devitrified at the time of glass production, and there is a possibility that the crystallization tendency of the glass tends to be strong. Among the above-mentioned arbitrary components, such as Zn〇, B203, Al2〇3, W03, and M0O3, in addition to glass stabilization, there is an effect of lowering the coefficient of thermal expansion of the glass. It is preferable to use ZnO as an essential component and to contain 2 to 6% by mass. Further, such as: Nb205, Ti02, Zr02, etc. have an effect of improving chemical durability. For example, Li2〇, Na20, K20, Cs2〇, etc. have the effect of lowering the softening point of the glass and further improving the fluidity. 12 201034846 For example: MgO, CaO 'SrO, BaO, etc. have the effect of adjusting the point-degree of breakage and adjusting the coefficient of thermal expansion. The content of each of the components is preferably as described above, and the total content of the optional components is preferably not more than 15% by mass, more preferably 10% by mass or less. The glass material for sealing contains a low expansion filler. Preferably, the low-expansion filler is selected from at least one group consisting of, for example, cerium oxide, aluminum oxide, zirconium oxide, cerium-zirconium cordierite, zirconium phosphate-based compound, soda-lime glass, and borosilicate glass. . Examples of the zirconium phosphate-based compound include (ZrO)2P2〇7 and ΑΖΓ2(ρ〇4)3 (α is selected from Na, and at least one selected from the group), NbZr2(P04)3, and Zr2 ( W 〇 3) (P 〇 4) 2, or these composite compounds. "Low expansion filler" means a material having a lower coefficient of thermal expansion than a sealing glass which is a main component of a sealing glass material. The content of the low-expansion filler is appropriately set depending on the thermal expansion coefficient of the sealing glass and the thermal expansion coefficient of the glass substrates 2 and 3. The low-expansion filler is different depending on the thermal expansion coefficient of the sealing glass and the glass substrates 2 and 3, but it is preferably contained in the range of 1 to 50% by volume based on the glass material for sealing. When the glass substrates 2 and 3 are formed of an alkali-free glass (coefficient of thermal expansion: 35 to 40×l (r7/°c)), it is preferred to add a large amount (for example, a range of 3 〇 to 5 〇 vol%) of a low-expansion filler. When the glass substrates 2 and 3 are made of sodium-sprayed glass (thermal expansion coefficient: 85 to 9 _ force. 〇, it is preferable to add a small amount (for example, a range of 15 to 40% by volume) of a low-expansion filler. Further, the low-expansion filler is preferably in the form of a powder, and the maximum particle diameter is preferably 1 μm or less, more preferably 50 μm or less. The glass material for sealing further contains a laser absorbing material. Laser suction 13 201034846 For example, a compound such as Fe, HCQ, NiACuti, or a metal containing an oxide of the foregoing metal is used. The content of the laser absorbing material is preferably set to 0. In the range of 10 vol. /.. If the content of the laser absorbing material is not i_%, the sealing layer (4) may not be sufficient when laser irradiation. If the laser absorbing material contains more than 10% by volume, in the ray When the irradiation is performed, there is a locality near the interface with the second glass substrate 3. In the case of the heat generation, the second glass substrate 3 is broken, and the flow of the It shape or the nine-faced surface material is reduced, which may cause a decrease in the adhesion to the first glass substrate 2. The amount of the laser absorbing material 3 is reduced. Preferably, X is in the range of 1 to 9 vol%. Further, the laser absorbing material is preferably in a powder form, and the maximum particle diameter is preferably 5 Å or less, more preferably 2 Å or less. The tin-phthalic acid-based glass medium used is a sealing material for low-temperature heating because of its transparency and low glass transition point. S, when the sealing material layer 5 is irradiated with the laser light 6 to form the sealing layer 4 In the case where the tin-phosphate glass medium (sealing glass) is simply used for the laser sealing, the bonding strength between the glass substrates 2, 3 and the sealing layer 4 cannot be sufficiently improved. This phenomenon is considered to be because the heating is performed by the firing furnace. In the case of using laser heating, the melting conditions of the glass medium may be different. The bonding strength between the glass substrate and the glass medium is based on the residual strain caused by the difference in thermal expansion, and the glass base. The reaction with the glassy medium is generally carried out by heating in a baking furnace, and the reaction layer is formed at the interface between the glass substrate and the glass medium (sealing layer) regardless of the type of the glass substrate and the glass medium. The use of chemical bonding can increase the adhesion strength by 201034846. In other words, the sealing step of heating by the firing furnace is used, because there is sufficient time for forming the reaction layer at the subsequent interface, so that sufficient bonding strength can be obtained. The sealing step of the radiation heating is performed by irradiating the laser beam 6 while scanning along the frame-shaped male and sealing material layers 5. The sealing material layer 5 is sequentially melted from the portion irradiated by the laser light 6. And will be quenched and solidified as the irradiation of the laser light 6 is completed. In this case, the formation time of the reaction layer cannot be sufficiently obtained in the laser sealing step. Therefore, the glass bead having a composition of three components such as SnO, Sn2, and he»5 can not sufficiently improve the bonding strength between the glass substrates 2, 3 and the sealing layer 4 when the laser is reached or sealed. In the sealing step using laser heating, in order to form a reaction layer on the interface between the glass substrates 2, 3 and the sealing layer 4, an appropriate amount of carbon is left in the sealing material layer (the fired layer of the sealing glass material) 5. It is valid. That is, the carbon remaining in the sealing material layer 5 formed using the tin-phosphate glass medium has a function as a reducing agent. Therefore, even if the laser seal is melted and cured in a localized glass medium for a short period of time, the tin oxide can be reduced by the residual carbon in the sealing material layer 5, thereby improving the glass substrates 2, 3, and the tin-phosphorus phosphate glass. Reactivity between media. In other words, at the time of laser irradiation, a part of tin oxide can be changed into metallic tin (Sn) by reducing tin oxide (particularly, SnO which is easily reduced) in a tin-scale acid glass medium by residual carbon. The metal tin (tetra) has a property of being easily diffused into the glass substrates 2, 3. Therefore, by presenting a proper amount of metal tin (Sn) in the sealing material layer 5 which is melted by the irradiation of the light 6 , even in the laser sealing step of performing the melt curing of the glass medium between the short time 15 201034846, the subsequent interface can be A reaction layer is formed. Therefore, the adhesion strength between the glass substrates 2, 3 and the tin-phosphate glass medium (sealing layer 4) can be improved at the time of laser sealing. The amount of carbon remaining in the sealing material layer 5 (the amount of residual carbon of the sealing material layer 5) is set in the range of 20 to 1 ppm by mass. If the residual carbon amount of the sealing material layer $ is less than 20 Ppm, the ability as a reducing agent is insufficient, and the reduction effect of the above tin oxide cannot be sufficiently obtained. That is, the metal tin cannot be sufficiently formed, and as a result, the adhesion strength between the south glass substrates 2, 3 and the sealing layer 4 cannot be sufficiently extracted. On the other hand, when the residual carbon amount of the sealing material layer 5 exceeds a1000 ppm, the amount of metal tin generated is excessive, and the electric resistance value of the glass is lowered, so that the insulating property of the sealing layer 4 cannot be ensured. This situation will become the cause of various adverse conditions. In other words, in the sealing region 2b of the first glass substrate 2, a wiring for pulling the electrode of the electronic component formed in the element forming region 2a to the outside is formed. Since the excess residual carbon lowers the insulating property of the sealing layer 4, there is a possibility that a defect such as a new route occurs between the wirings formed on the first glass substrate 2 depending on the sealing layer 4'. The effect of improving the adhesion strength between the glass substrates 2, 3 and the sealing layer 4, the insulation of the sealing layer 4, and the like, and the residual carbon amount of the sealing material layer 5 are preferably in the range of 30 to 50 ppm by mass. . Further, the method of controlling the amount of residual carbon in the sealing material layer 5 will be described later. The thickness T1 of the sealing material layer 5 is set to match the required gap between the first glass substrate 2 and the second glass substrate 3 (i.e., the thickness T2 of the sealing layer 4). The Ray·Electric Ten device 1 and the manufacturing steps thereof according to the present embodiment are particularly effective in the case where the thickness T1 of the sealing material layer 201034846 is set to 1 〇μηι or more. Further, it is more preferable to set the thickness Τ1 of the sealing material layer 5 to 10 to ΙΟΟμιη. When the sealing material layer 5 having such a thickness τι is irradiated with the laser light 6 and sealed, according to the present embodiment, the bonding strength between the glass substrates 2, 3 and the sealing layer 4 can be improved, and the glass panel can be lifted. Hermetic sealing and so on. Further, in the case where the residual carbon in the sealing material layer 5 is not limited to the case of using a tin-phosphate glass medium, a case where a glass medium (sealing glass) of another composition (for example, a bismuth system (BisOrBiO3 type) glass medium) is used is also used. effective. That is, when using a mass ratio, it contains 70 to 90% of Bi203, 1-2% of ZnO, and 2 to 12 °/. In the case where the glass medium is formed into a sealing material layer, the same effect as in the case of using a tin-filled glass medium can be expected by leaving an appropriate amount of carbon. The sealing material layer 5 composed of the above-mentioned sealing glass material is formed on the sealing region 3& of the second glass substrate 3 as will be described later. First, a sealing glass material containing your sealed glass (tin-phosphate glass medium), a laser absorbing material, and a low-expansion filler is mixed with a vehide to prepare a sealing material paste. The carrier can be used, for example, to dissolve, for example, methyl cellulose, ethyl cellulose, m-methyl cellulose, oxyethyl cellulose m-vitamin, propyl cellulose, cellulose material m, such as pine oil. In a solvent such as alcohol, butyl carbitol acetate vinegar or ethyl carbitol acetate vinegar, or for example, such as methyl (meth) propionate, methyl (meth) acrylate, (methyl) Acrylic acid, such as butyl acrylate or 2-hydroxyethyl methacrylate, is dissolved in, for example, methyl ethyl ketone, terpineol, butyl carbitol acetate, phenanthrene + bisphenol Among solvents such as acetate. 17 201034846 ^The sealing material __ degree system can be adjusted as long as the corresponding viscosity on the glass substrate 3 is matched with the ratio of the ratio of the binder to the solvent and the ratio of the glass material for sealing to the cutting (four). In the sealing material, it is also possible to add a known additive to the glass paste, such as _, 分 (4). The sealing material _ can be prepared by using a rotary mixer, a feeder, a ball with a wing. In the second glass substrate 3, the sealing material paste is applied in the sealing region, and the coating layer of the sealing material paste is formed. The sealing material paste is used, for example, screen printing. Printing methods such as gravure printing are applied to the second sealing region 3a or applied along the second sealing region using a dispenser or the like. The coating layer of the sealing material paste is applied at a temperature of, for example, 12 Torr or more. It takes 10 minutes or more to dry. The drying step is difficult to remove the solvent in the coating layer. If there is solvent remaining in the coating layer, there is a possibility that the binder component may not be sufficiently removed in the subsequent baking step. The above sealing material The coating layer of the paste is fired to form the sealing material layer 5. The baking step is first to heat the coating layer to a temperature below the glass transition point of the sealing glass (glass medium) which is the main component of the sealing glass material. After removing the binder component in the coating layer, it is heated to a temperature equal to or higher than the softening point of the sealing glass (glass medium), and the sealing glass material is melted and melted onto the glass substrate 3. Thus, a seal is formed. The sealing material layer 5 is formed by using a fired layer of a glass material. The coating layer baking step of the sealing material paste is preferably carried out according to a temperature range of 200 to 500 ° C, more preferably 230 to 430 ° C. The temperature range is implemented. In the step of forming the sealing material layer 5, the following method is employed: 18 201034846 (1) Organic matter or carbon is used as a carbon source and is present in the sealing glass (or sealed) In the glass material, a part of the carbon derived from the carbon source remains; a method of leaving the binder component (organic resin) in the sealing material paste or a part of the carbon derived from the organic solvent, and the sealing material layer 5 Residue In addition, the method of the above-mentioned (1) can be applied to the method in which the amount of residual carbon in the sealing material layer 5 can be in the range of 20 to 1000 ppm by mass. In the method of pulverizing glass, for example, an organic substance such as an alcohol is added as a carbon source. This method is because the alcohol or the like also functions as a pulverization aid, so that the pulverization efficiency of the glass can also be improved. The carbon source added to the carbon source is not limited to organic matter, and may be carbon such as carbon black or graphite. Even if the amount of carbon source such as organic matter or carbon is set to be constant with respect to the sealing glass, the amount of residual carbon remains. In accordance with the firing conditions, the relevant information on the extent to which the added carbon source remains after firing is determined in advance, and the residual carbon content of the sealing material layer 5 is controlled based on this data. In addition, the amount of carbon source added can be set to a certain value, and the firing conditions (temperature, time) can be changed to control the amount of residual carbon. The method of (2) is a method in which a carbon source is not added to the sealing glass, and a part of carbon derived from a binder component (organic resin) or an organic solvent used for gelatinization is left. In this case, the composition of the carrier, the composition ratio of the sealing glass material to the carrier at the time of gelatinization, and the firing conditions, particularly in the temperature range from the burning and decomposition of the resin to the softening of the sealing glass, the temperature rising rate And holding time are important matters. Regarding the carrier used in the production of the sealed paste, the method using the method (1) is not 19, 201034846, and the limitation is particularly limited to the case of the branch of the bismuth (2). For example, it is used in organic solvents such as terpineol, carbamide, and ethyl carbitol acetate. (2) The method of (4) carrier, preferably 0.5 to 5 mass% of deuterated cellulose 'dissolved in a group consisting of pine _, τ carbamide and ethyl carbitol acetate vinegar - an organic solvent, or two or more kinds of mixed refrigerants 95 to 99.5 mass%. Further, as for the gelatinization of the glass material for sealing, it is preferred to carry out the β-β-β I-forming material paste with 85 to 93% by mass of the material and 7 to 15% by mass of the carrier. By using such a carrier or a sealing material paste, the residual carbon amount controllability of the sealing material layer 5 can be improved. The coating layer baking step of the sealing material paste is generally carried out in such a manner that the resin component is completely burned and decomposed in a manner that does not reduce the &' sealing glass material. Specifically, in the temperature region in which the resin is burned or decomposed to a temperature higher than the degree of softening and flowing of the sealing glass, the temperature increase rate is slowed, and the enthalpy is maintained for about 15 hours, thereby promoting the combustion of the resin. ,break down. In the case of the method of (2), an appropriate amount of carbon remains in the sealing material layer 5 by controlling the combustion and decomposition steps of the resin. As described above, the resin component in the carrier is preferably nitrocellulose. Nitrocellulose is burned and decomposed at a temperature in the range of 200 to 250 °C. The temperature at which the sealing glass of the present embodiment softens and flows is 260 to 450. (: range. Therefore, 200 to 450. (: The temperature range is important. The sealing material layer 5 having residual carbon as described above can be obtained by controlling the temperature increase rate of 200 to 450 ° C. Specifically, Preferably, it is in the range of 200 to 450. (: The temperature is raised in the temperature range according to 20 201034846 10 to 35 ° C / min. When the batch furnace or the like is used for firing, the temperature in the furnace is uniform, while remaining in the furnace 200 to 45 (in the case of the TC temperature range, it is preferable to set the holding time to less than 2 minutes. By using such a condition, the residual carbon amount of the sealing material layer 5 can be controlled within a desired range. As shown in Fig. 2(a), the second glass substrate 3 (having a sealing material layer 5) and the first glass substrate 2 (having an element forming region 2a having the element forming region) are used. An electronic device manufactured separately, for example, an illuminating device using FPD or OEL elements such as 0ELD, PDP, LCD, or an electronic device such as a solar cell such as a dye-sensitized solar cell is as shown in Fig. 2(b) It is shown that the second glass substrate 2 and the second glass substrate 3 have several pieces. One surface of the region 2a is laminated with respect to one surface having the sealing material layer 5. The gap is formed in the element forming region 2a of the first glass substrate 2 in accordance with the thickness of the sealing material layer 5. As shown in Fig. 2(c), the sealing material layer 5 is irradiated with the laser beam 6 through the second glass substrate 3. The laser beam 6 is irradiated while being Q-scanned along the frame-shaped sealing material layer 5. The laser beam 6 is not particularly limited. Laser light from, for example, semiconductor laser, carbon dioxide gas laser, excimer laser, YAG laser, HeNe laser, etc. can be used. The output of the laser light 6 is appropriately set in accordance with the thickness of the sealing material layer 5, etc. It is set to, for example, 2 to 15 〇w. If the laser output is less than 2 W, there is a possibility that the sealing material layer 5 cannot be melted. On the other hand, if it exceeds 15 〇w, the glass substrates 2 and 3 are easy. Cracks, breaks, etc. occur. The output of the laser light is preferably in the range of 5 to 100 W. The sealing material layer 5 is sequentially melted from the portion irradiated by the laser light 6 scanned along it, if the irradiation of the laser light 6 ends , it will be cured quickly, and 21 2010 34846 is fixed to the first glass substrate 2. Then, by irradiating the laser light 6 around the entire sealing material layer 5, the second glass substrate 2 and the second glass substrate are formed as shown in Fig. 2(d). Three sealing layers 4 are sealed. Since the sealing material layer 5 using a sealing glass (tin-phosphate glass medium) enhances reactivity with the glass substrate 2 in accordance with residual carbon, even when irradiated with laser light 6 In the short-time melt-solidification step (sealing step), the adhesion between the glass substrate 2 and the sealing glass can be improved. Therefore, the bonding strength between the glass substrates 2 and 3 and the sealing layer 4 can be improved. In this case, an electronic device in which the electronic components formed on the element forming region are hermetically sealed by using the glass panel composed of the first glass substrate 2, the second glass substrate 3, and the sealing layer 4 is used. Further, the glass panel which is hermetically sealed inside is not limited to the electronic device, and can be applied to, for example, the (four) body (difficult) of the electronic department, or the glass element (building material, etc.). The reliability of the electronic device 1 depends on, for example, the hermetic sealing property by the sealing layer*, or the bonding strength between the glass substrates 2, 3 and the sealing layer 4, and the like. According to the present embodiment, an electronic device excellent in reliability can be obtained because the hermetic sealing property and the adhesion strength can be improved! . Here, the paraffin that is layered in the sealing material remains even after the laser seal. Therefore, the sealing layer 4' formed by using the residual amount in the mass ratio of 20 to 1 is the same as the sealing material layer 5 even if the form of carbon is changed. Therefore, according to the sealing layer 4 in which the residual carbon amount is in the range of 2 〇 to 1 〇〇〇, the electronic device (4) can be improved in sealing reliability and mechanical reliability. 22 201034846 EXAMPLES Next, specific examples of the present invention and evaluation results thereof will be described. In addition, the following description is not intended to limit the invention, and modifications may be made in the form of the spirit of the invention. (Example 1) Preparation by mass ratio, containing: SnO: 55.7%, Sn02: 3.1%, P2〇5: 32.5%, ZnO: 4·80/〇, Al2〇3: 2.3%, SiO 2 : 1.6% Tin-phosphate glass medium, strontium phosphate ((Zr0)2P207) powder as a low expansion filler, and mass ratio: Fe203: 35%, 0203: 35%, Co203: 20%, MnO: 10% The composition of the laser absorber. In addition, 4% by mass of nitrocellulose as a binder component was dissolved in 96% by mass of a solvent composed of butyl carbitol acetate to prepare a carrier. A tin-phosphate glass medium was produced as follows. First, the glass is dissolved in a manner to achieve the above composition ratio to obtain cullet. Next, the cullet was pulverized using an oxidized Ming ball mill. At this time, the pulverization aid added 2 cc of ethanol to the glass lkg. Next, classification was carried out by means of a gas current classifier with a maximum particle diameter of 8 μm to obtain a target tin-acid-based glass medium. Then, 56 parts by volume of the tin-phosphate glass medium, 42% by volume of zirconium phosphate powder, and 2% by volume of the laser absorbing material were mixed to obtain a glass material for sealing (thermal expansion coefficient: 47 x 10 7 / ° C). The sealing glass material 80% by mass and 20% by mass of the carrier were mixed to prepare a sealing material paste. Then, the sealing material 23 201034846 paste was applied by screen printing in the outer peripheral region of the second glass substrate (size: 90×90×〇.7 mmt) composed of the non-experimental glass (thermal expansion coefficient: 38 χ 10·7 /° () ( Line width: 500 μm) After drying, drying was carried out under conditions of 120 ° 匸Χίο. The dried sealing material paste was applied to the layer, and the temperature was raised to 2.5 at a temperature increase rate of 〇/min. (:, at this temperature After the debonding agent treatment was carried out for 4 minutes, the temperature was raised by 5° (2/πΰη was heated to 430 ° C, and the temperature was maintained for 10 minutes to be fired. Thus, the film thickness was formed into (9) The amount of residual carbon in the sealing material layer is 200 ppm. The amount of residual carbon in the sealing material layer is a value measured using a carbon and sulfur analyzer EMIA_32〇v (trade name, manufactured by Horiba, Ltd.). In the same manner, the second glass substrate having the above-mentioned sealing material layer and the second glass substrate having the element forming region (the region where the OEL element has been formed) (the alkali-free composition of the same shape and the same shape as the second glass substrate) Glass house The substrate (the substrate) is laminated, and then the laser material (semiconductor laser) having a wavelength of 94 〇 nm and outputting 25 W is irradiated at a scanning speed of 1 〇//s through the second glass substrate to the sealing material layer, thereby sealing. The material layer (4) was cooled and solidified, and the first glass substrate and the second glass substrate were sealed. The amount of residual carbon in the sealing layer was measured in the same manner as the sealing material layer, and it was confirmed that the sealing material layer remained. The amount of carbon is equal. In the latter, the electronic device for sealing the element forming region by the glass panel is examined. (Examples 2 to 4) In addition to the composition of the tin-disc glass medium, low expansion filling The type of the material, the type of the laser absorbing material, and the ratio of the blending materials are changed to the conditions shown in Table ,, and the rest are the same as the modulating sealing material paste of the embodiment. In addition to using the sealing material paste, the sealing material will be sealed. The material layer _ carbon retention control method was changed to 24 201034846 except for the method shown below, and the formation of the sealing material layer for the second glass substrate, the first glass substrate and the second glass were carried out as in the first embodiment. Laser sealing of the board. In the evaluation of the characteristics described later, an electronic device that seals the element forming region by the glass panel in this manner is provided. The residual carbon amount of the sealing material layer is 45 〇 ppm in Example 2, and Examples 3 is 70 ppm, and Example 4 is 850 ppm. The residual carbon amount is measured as in Example 1. In Example 2, the residual carbon amount of the sealing material layer was controlled as follows. When tin-phosphate glass was used The medium, the low-expansion filler, and the laser absorbing material are mixed to form a glass material for sealing, and blended into a blackening agent as a reducing agent. The blending amount of carbon black is set to 5 for the sealing glass material. 〇〇PPm. A coating layer for forming a sealing material paste as in Example 1 except for using such a sealing glass material (dried by rcxi〇min). The dried (4) paste coating layer is heated to 230 at a heating rate of 8 ° C / min, held at this temperature for (9) minutes, and then de-bonded, and then heated to a heating rate of 8 t / min to 43〇t, and baked at this temperature for 10 minutes. In Example 3, the residual carbon amount of the sealing material layer was controlled as follows. A coating layer of a sealing material paste is formed as in the embodiment. The sealing material paste was prepared by mixing 84% by mass of the sealing glass material with the carrier 丄6 f amount%. The coating layer was dried at 120 ° C x 1 min. In addition, ethanol was not used in the pulverization of cullet. The dried sealing material paste was coated with >#, heated to a temperature of 25 ° C / min to 43 ° C, and kept at this temperature for 1 G minutes * baking. In Example 4, residual carbon amount control was carried out in accordance with the conditions as in the examples. At this time, the blending amount of carbon black was set to 1000 ppm in the glass material for sealing relative to 25 201034846. In Examples 2 to 4, the residual carbon amount of the sealing layer was the same as that of the sealing material layer. (Examples 5 to 6) The tin-filled glass medium, the low-expansion filler, and the laser absorbing material shown in Table 1 were prepared and mixed by the composition ratios shown in Table 1, respectively. Glass material for sealing. The sealing glass material 82% by mass was mixed with 18% by mass of the carrier of Example 1, to prepare a sealing material paste. Then, in the outer peripheral region of the second glass substrate (size: 10〇xl〇〇x〇.55mmt) composed of soda lime glass (thermal expansion coefficient: 87xi〇_7/°c), each sealing material paste was used in the screen. After the printing method was applied (line width: 5 〇〇 gm), it was dried by 120 ° C for 10 minutes. Each of the coating layers (after drying) of the above-mentioned sealing material paste was subjected to baking to form a sealing material layer having a film thickness T1 of 60 μm. Regarding the method of controlling the residual carbon amount of the sealing material layer, Example 5 is as in Example 3, and Example 6 is as in Example 1. The residual carbon content of the sealing material layer of Example 5 was 100 ppm, and Example 6 was 150 ppm. Next, a second glass substrate having a sealing material layer and a second glass substrate having a device forming region (a region in which an OEL element has been formed) (a substrate made of soda lime glass having the same composition and shape as the second glass substrate) ) Implementing a layer. Next, the laser light (semiconductor laser) having a wavelength of 940 nm and outputting 40 W is irradiated to the sealing material layer through the second glass substrate to a sealing speed of 5 mm/s, and the sealing material layer is melted and rapidly solidified. 1 The glass substrate and the second glass substrate are sealed. The residual amount of the layer is the same as that of the sealing material layer. In the characteristic evaluation sheet described later, an electronic device that seals the element forming region by using the glass panel 2010 20108 glazing panel is provided. (Comparative Example 1) A tin-phosphate glass medium having the same composition as in Example 1 was used. The glass material for sealing was prepared and sealed as in Example 1.

製、針對第2玻璃基板之密封材料層的形成、 W 及第1破璃 基板與第2玻璃基板的雷射密封。關於密封材料層的 量控制方法,係如同實施例2同樣的,使用在漆 m爱留衩 甘在封用破螭材The formation of the sealing material layer for the second glass substrate, W, and the laser sealing of the first glass substrate and the second glass substrate. The method for controlling the amount of the sealing material layer is the same as in the second embodiment, and is used in the lacquer m.

料中摻合入碳黑的方法。但,碳黑的摻合量係相對於密封 用玻璃材料設為1500ppm。在後述特性評估中,提供贫匕 式利用玻璃面板對元件形成區域施行密封的電子穿置 (比較例2) 製備依質量比例計含有V205 : 44.3%、Sb2〇3 : 35 p/ P2〇5 : i9.7%、Al2〇3 : 0·5%、Ti〇2 : 〇.4% 組成的軏系玻。璃 介質、以及作為低膨脹填充材的磷酸鉛粉末。更,將作為 黏結劑成分的硝化纖維素4質量%溶解於二乙二醇單丁醚 乙酸脂96質量%中,而製得載體。 將鈒系玻璃介質90體積。/。與堇青石粉末1〇體積%進行 混合’而製得密封用玻璃材料(熱膨脹係數:74χ1〇·7Γ(:)。 將該岔封用玻璃材料73質量%與載體27質量。/〇進行混合,而 調製得密封材料糊劑。接著,在由與實施例丨同樣的無鹼玻 璃所構成之第2玻璃基板外周區域,將密封材料糊劑利用網 版印刷法施行塗佈(線寬w: 500μιη)後,依12〇txl〇分鐘的 條件施行乾燥。將該塗佈層依450〇Cxl0分鐘的條件施行燒 成’便形成膜厚T1為60μιη的密封材料層。 27 201034846 接著’將具有密封材料層的第2玻璃基板、以及具有元 件形成區域(已形成0EL元件的區域)的第W璃基板(由與 第纟1成 '同形狀的賴玻璃構狀基板)施行 積層。接著’透過第2破璃基板對密封材料層,將波長 940nm、輸出牝…的雷射光(半導體雷射)依5mm/s掃描速度 進行照射’藉由將密封材料層熔融並急冷固化,便將第冰 璃基板與第2玻璃基板施行密封。在後述特性評估中,提供 依此方式利用玻璃面板對元件形成區域施行密封的電子裝 置。 其次’針對實施例1〜6及比較例丨〜2的玻璃面板外觀, 評估玻璃基板有無裂痕。外觀係利用光學顯微鏡進行觀察 並S平估。且’測疋各玻璃面板的氣密性。氣密性係使用氦 氣測漏測試儀施行評估。此外,利用實施例1〜6及比較例1〜2 中所使用之密封用玻璃材料施行的密封層與玻璃基板間之 接著強度、及密封層的電阻值,係依如下進行測定。該等 的測定、評估結果,如表1與表2所示。表1與表2中合併記 載玻璃面板的製造條件。 利用密封用玻璃材料施行的玻璃基板接著強度之測定 方法係如下。首先,在寬30mm的第1玻璃基板端部附近, 使用各例的密封材料糊劑’形成厚度60μηι、線寬1mm的密 封材料層。糊劑塗佈層係依各自的合適條件進行燒成。接 著,將第2玻璃基板端部配置於密封材料層上。第2玻璃基 板係依與第1玻璃基板呈不同狀態(以密封材料層為中心, 第1與第2玻璃基板係呈直線狀排列狀態)的方式配置。將該 28 201034846 等一邊利用l〇kg荷重施行加壓’ 一邊對密封材料層依 - 10mm/s掃描速度照射波長940nm雷射光,而施行密封。雷 射光的輸出係设為適合各材料的值。將依此所形成的接著 強度測定用樣品的其中一玻璃基板利用夹具進行固定,並 從另一玻璃基板的密封層,將20mm的部分依lmm/min速度 施行加壓,並將密封層崩壞時的荷重視為「接著強度」 密封層的電阻值測定方法係如下。首先,製備依4 ^ 間隔形成2個1T〇導電膜的玻璃基板A。在此之外另行製備 已形成膜厚60μηι、寬1mm、長30mm密封材料層(使用各例 密封材料糊劑所形成的密封材料層)的玻璃基板B。接著, 將玻璃基板A與玻璃基板B,依密封材料層橫跨於2個汀〇導 . 電膜上的方式進行重疊。從玻璃基板B側朝密封材料層,將 波長940nm雷射光依i〇mm/s掃描速度施行照射而密封。 針對依此所形成的電阻值測定用樣品,在2個ιτο導電 膜上連接著電極,利用將偏壓電壓設為1〇〇¥的微小電流計 〇 施行微小電流的測定,並求取電阻值。測定係在氮環境中 實%在將作為參照樣品的雷射密封前之玻璃基板a的2個 ITO導電膜間的電阻值進行測定的情況下,結果為 2·〇χ1〇12Ω。關於由各例所獲得之電阻值,將測定值達 2-〇xl〇un以上的情況評為「良好(〇)」,將測定值未滿 2·〇Χΐ〇1〗Ω的情況評為「不良(X)」,並記於表1與表2中。 29 201034846 [表l] 實施例1 實施例2 實施例3 實施例4 密封 玻璃 (質量%) SnO 55/7 55.7 67.8 61.2 Sn02 3.1 3.1 2.4 1.2 P2〇5 32.5 32.5 29.8 31.8 ZnO 4.8 4.8 — 5.8 ai2o3 2.3 2.3 — Si02 1.6 1.6 低膨脹填充材 磷酸鍅 磷酸锆 (1) 氧化矽+ (2) 菫青石 磷酸锆 雷射吸收材 Fe-Cr-Co-Mn-0 Fe-Cr-Co-Mn-O Fe-Mn-Cu-Al-0 Fe-Cr-Co-Mn-O 密封用 玻璃 材料 (體積%) 密封玻璃 56 56 49 51.5 低膨脹 填充材 42 42 (1)40+0)10 46.0 雷射 吸收材 2 2 1 2.5 密封材料層中的 殘留碳量 (質量ppm) 200 450 70 850 玻璃基板 無驗玻璃 評估 結果 氣密性 〇 〇 〇 〇 接著 強度(g) 150 120 130 140 電阻值 〇 〇 〇 〇 基板裂痕 〇 〇 〇 〇 30 201034846 [表2] 實施例5 實施例6 比較例1 比較例2 SnO 59.3 63.3 55.7 — Sn〇2 0.8 2.5 3.1 — P2〇5 33.3 28.8 32.5 — ZnO 6.0 4.9 4.8 — 密封 玻璃 (質量%) Al2〇3 — 0.5 2.3 0.5 Si02 0.6 — 1.6 — V205 — — — 44.3 Sb2〇3 — — — 35.1 P2〇5 — — — 19.7 Ti〇2 — — — 0.4 低膨脹填充材 氧化矽 堇青石 磷酸锆 磷酸锆 雷射吸收材 Fe-Cr-Co-Mn-0 Fe-Mn-Cu-Al-0 Fe-Cr-Co-Mn-0 — 密封用 玻璃材料 (體積%) 密封玻璃 70 78.5 56 90 低膨脹 填充材 28 20.0 42 10 雷射吸收材 2 1.5 2 — 密封材料層中的 殘留碳量 (質量15pm) 100 150 1200 — 玻璃基板 鈉鈣玻璃 無鹼玻璃 氣密性 〇 〇 〇 〇 評估 接著強度 (g) 180 200 180 20以下 結果 電阻值 〇 〇 X 〇 基板裂痕 〇 〇 〇 〇A method of blending carbon black into the material. However, the blending amount of carbon black was set to 1500 ppm with respect to the glass material for sealing. In the evaluation of the characteristics described later, an electron penetration (Fig. 2) in which the element forming region was sealed by the glass panel was provided in a barren manner (Comparative Example 2), and V205 was prepared by mass ratio: 44.3%, Sb2〇3: 35 p/P2〇5: I9.7%, Al2〇3: 0.5%, Ti〇2: 〇.4% composed of lanthanide glass. A glass medium and a lead phosphate powder as a low expansion filler. Further, 4% by mass of nitrocellulose as a binder component was dissolved in 96% by mass of diethylene glycol monobutyl ether acetate to prepare a carrier. The lanthanide glass medium is 90 volumes. /. The glass material for sealing was prepared by mixing with the cordierite powder in an amount of 1% by volume. The coefficient of thermal expansion was 74 χ 1 〇 · 7 Γ (:). The cerium sealing glass material was 73% by mass and the carrier 27 mass was used. Then, a sealing material paste was prepared. Then, the sealing material paste was applied by a screen printing method in the outer peripheral region of the second glass substrate composed of the same alkali-free glass as in Example ( (line width w: 500 μm) After that, drying was carried out under the conditions of 12 〇txl 〇 minutes. The coating layer was fired under conditions of 450 〇C x 10 minutes to form a sealing material layer having a film thickness T1 of 60 μm. 27 201034846 Then 'will have a sealing material The second glass substrate of the layer and the W-th glass substrate having the element formation region (the region in which the OLED element is formed) (the glass substrate having the same shape as the first '1) are laminated. Then, the second transmission is performed. The glass substrate is irradiated with laser light having a wavelength of 940 nm and output (... (semiconductor laser) at a scanning speed of 5 mm/s. By melting the sealing material layer and quenching it, the glacial substrate is immersed. The second glass substrate is sealed. In the characteristic evaluation described later, an electronic device that seals the element formation region by the glass panel is provided. Next, the appearance of the glass panels of Examples 1 to 6 and Comparative Examples 2 to 2 is described. The glass substrate was evaluated for cracks. The appearance was observed by an optical microscope and evaluated. The airtightness of each glass panel was measured. The airtightness was evaluated using a helium leak tester. In addition, Example 1 was used. The bonding strength between the sealing layer and the glass substrate and the resistance value of the sealing layer performed by the glass material for sealing used in ~6 and Comparative Examples 1 to 2 were measured as follows. The measurement and evaluation results are as follows. Table 1 and Table 2. The manufacturing conditions of the glass panel are collectively described in Table 1 and Table 2. The method of measuring the adhesion strength of the glass substrate by the sealing glass material is as follows. First, at the first glass substrate end of 30 mm in width In the vicinity of the portion, a sealing material layer having a thickness of 60 μm and a line width of 1 mm was formed using a sealing material paste of each example. The paste coating layer was fired under appropriate conditions. Then, the second glass substrate is placed on the sealing material layer. The second glass substrate is in a different state from the first glass substrate (the first and second glass substrates are in a straight line around the sealing material layer). In the arrangement of the state of the arrangement, the 28 201034846 and the like are subjected to pressurization using a load of 1 〇 kg while irradiating a laser beam having a wavelength of 940 nm at a scanning speed of 10 mm/s on the sealing material layer to perform sealing. The output of the laser light is applied. A value suitable for each material is set. One of the glass substrates of the sample for measuring the strength of the subsequent strength formed by the above is fixed by a jig, and a portion of 20 mm is applied at a speed of 1 mm/min from the sealing layer of the other glass substrate. When the pressure is applied and the sealing layer is broken, the load is evaluated as "adhesion strength". The method for measuring the resistance value of the sealing layer is as follows. First, a glass substrate A in which two 1T tantalum conductive films were formed at intervals of 4 ^ was prepared. Further, a glass substrate B having a film thickness of 60 μm, a width of 1 mm, and a length of 30 mm of a sealing material layer (a sealing material layer formed using each of the sealing material pastes) was separately prepared. Next, the glass substrate A and the glass substrate B are stacked so as to straddle the two layers of the sealing material layer on the electric film. From the side of the glass substrate B toward the sealing material layer, laser light having a wavelength of 940 nm was irradiated and irradiated at a scanning speed of i 〇 mm/s. With respect to the sample for measuring the resistance value formed in this manner, an electrode is connected to two conductive films, and a minute current meter having a bias voltage of 1 〇〇 is used to measure a minute current, and a resistance value is obtained. . In the case where the resistance value between the two ITO conductive films of the glass substrate a before the laser sealing of the reference sample was measured in the nitrogen atmosphere, the measurement was 2·〇χ1〇12 Ω. Regarding the resistance value obtained from each example, the case where the measured value is 2 〇xl 〇 or more is rated as "good (〇)", and the case where the measured value is less than 2·〇Χΐ〇1 Ω is rated as " Bad (X)" and recorded in Tables 1 and 2. 29 201034846 [Table 1] Example 1 Example 2 Example 3 Example 4 Sealed glass (% by mass) SnO 55/7 55.7 67.8 61.2 Sn02 3.1 3.1 2.4 1.2 P2〇5 32.5 32.5 29.8 31.8 ZnO 4.8 4.8 — 5.8 ai2o3 2.3 2.3 — Si02 1.6 1.6 Low expansion filler zirconium phosphate zirconium phosphate (1) Cerium oxide + (2) Cordierite zirconium phosphate laser absorption material Fe-Cr-Co-Mn-0 Fe-Cr-Co-Mn-O Fe- Mn-Cu-Al-0 Fe-Cr-Co-Mn-O Glass material for sealing (% by volume) Sealing glass 56 56 49 51.5 Low expansion filler 42 42 (1)40+0)10 46.0 Laser absorbing material 2 2 1 2.5 Residual carbon in the sealing material layer (mass ppm) 200 450 70 850 Glass substrate without glass evaluation results Air tightness 〇〇〇〇 Next strength (g) 150 120 130 140 Resistance value 〇〇〇〇 Substrate crack 〇〇〇〇30 201034846 [Table 2] Example 5 Example 6 Comparative Example 1 Comparative Example 2 SnO 59.3 63.3 55.7 — Sn〇2 0.8 2.5 3.1 — P2〇5 33.3 28.8 32.5 — ZnO 6.0 4.9 4.8 — Sealed glass (quality %) Al2〇3 — 0.5 2.3 0.5 Si02 0.6 — 1.6 — V205 — — — 44.3 Sb2〇 3 — — — 35.1 P2〇5 — — — 19.7 Ti〇2 — — — 0.4 Low Expansion Filler Oxidized Cordierite Zirconium Zirconium Phosphate Laser Absorbing Material Fe-Cr-Co-Mn-0 Fe-Mn-Cu- Al-0 Fe-Cr-Co-Mn-0 — Glass material for sealing (% by volume) Sealing glass 70 78.5 56 90 Low expansion filler 28 20.0 42 10 Laser absorber 2 1.5 2 — Residual carbon in the sealing material layer Amount (mass 15pm) 100 150 1200 — Glass substrate soda lime glass, alkali-free glass, airtightness, evaluation, strength (g) 180 200 180 20, the following results, resistance value 〇〇X 〇 substrate crack 〇〇〇〇

由表1與表2中得知,依照實施例1〜6所製得之玻璃面板 均屬於外觀與氣密性優異,且可獲得良好接著強度。相對 於此,密封材料層殘留礙量超過1 OOOppm的比較例1之玻璃 面板,得知雖接著強度良好,但密封層絕緣性卻降低。此 情況,玻璃基板上所形成之配線發生諸如短路等不良情況 31 201034846 的可能性頗大。且’使用紈系玻璃介質的比較例2之習知玻 璃面板’係接著強度,且玻璃面板(電子裝置)的可靠度 差0 產業之可利用性 本發明係可利用於諸如具有密封材料層之玻璃構件、 以及諸如有機EL顯㈣、電_示面板、⑼顯示裝置等 平板型顯示器裝置、或染料敏化太陽電池等電子裝置的製 造。 另外,將2_年12月19日所提出申請的曰本專利申請 案出願2008-323422號的說明書、申請專利範圍、圖气及^ 要等的全部内容,以丨於本案中,並融人為本發_^ 書揭示。 【圖式簡單説明3 電子裝置之構造的剖 第1圖係顯示本發明實施形態的 視圖。 第2 (a)〜(d)圖係顯示本發明實施形態的電子裝置之製 造步驟的剖視圖。 第3圖係顯示第2圖所示之電子裝置之製造步驟中使用 的第1玻璃基板的平面圖。 第4圖係沿第3圖中的A-A線的切剖圖。 第5圖係顯示第2圖所示之電子裝置之劁、生水咖丄 造步驟中使用 的第2玻璃基板的平面圖。 第6圖係沿第5圖中的A-A線的切剖圖。 【主要元件符號説明】 32 201034846 1···電子裝置 3a…第2密封區域 2···第1玻璃基板 4…密封層 2a…元件形成區域 5…密封材料層 2b…第1密封區域 6…雷射光 3···第2玻璃基板 T1,T2...厚度As is apparent from Tables 1 and 2, the glass panels obtained in accordance with Examples 1 to 6 were excellent in appearance and airtightness, and good adhesion strength was obtained. On the other hand, in the glass panel of Comparative Example 1 in which the amount of the sealing material layer was more than 10,000 ppm, it was found that although the strength was good, the insulating property of the sealing layer was lowered. In this case, the wiring formed on the glass substrate is likely to have a problem such as a short circuit 31 201034846. Moreover, the conventional glass panel of Comparative Example 2 using a bismuth-based glass medium is a bonding strength, and the reliability of the glass panel (electronic device) is poor. 0 Industrial Applicability The present invention can be utilized, for example, in a layer having a sealing material. A glass member, and an electronic device such as an organic EL display (four), an electric display panel, (9) a display device such as a display device, or a dye-sensitized solar cell. In addition, the entire contents of the specification, application scope, drawings, and information of the patent application for the application of the patent application filed on December 19, 2, 2011, are included in this case. This book _^ book reveals. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a view showing the structure of an electronic device. Fig. 1 is a view showing an embodiment of the present invention. 2(a) to 2(d) are cross-sectional views showing the steps of manufacturing the electronic device according to the embodiment of the present invention. Fig. 3 is a plan view showing a first glass substrate used in the manufacturing steps of the electronic device shown in Fig. 2. Fig. 4 is a cross-sectional view taken along line A-A in Fig. 3. Fig. 5 is a plan view showing the second glass substrate used in the steps of the electronic device shown in Fig. 2 and the raw water brewing step. Fig. 6 is a cross-sectional view taken along line A-A in Fig. 5. [Description of main component symbols] 32 201034846 1···electronic device 3a...second sealing region 2··first glass substrate 4...sealing layer 2a...element forming region 5...sealing material layer 2b...first sealing region 6... Laser light 3···2nd glass substrate T1, T2...thickness

Claims (1)

201034846 七、申請專利範圍: 1· 一種具有密封材料層之玻璃構件,其特徵在於具備有: 玻璃基板,其具有密封區域;以及 密封材料層,其設置於前述玻璃基板的前述密封區 域上,且由含有密封玻璃、低膨脹填充材及雷射吸收材 的密封用玻璃材料之燒成層構成, 其中’前述密封玻璃依質量比例計,含有:20〜68〇/〇 的sn0、〇.5〜5%的_2及20〜40%的p2〇5,且前述密封材 料層中的殘留碳量依質量比例計,係在2(M _ppm範 圍内。 2.如申請專利範圍第W之具有密封材料層之玻璃構件, 其中,前述低膨脹填充材係由從二氧化矽、氧化鋁、二 氧化锆、矽酸鍅、蓳青石、磷酸鍅系化合物、_玻璃 及财酸玻璃—silicate g丨ass)所構成鮮 擇1種構成,且前述密封用破璃材料 圍内之前述低膨脹填充材。 ’體積%犯 3. ^申請專利範圍第1或2項之具有密封㈣層之玻璃構 件’其中,則述雷射吸收材係由從^& Ni及Cu所構成群組中至少選擇丨種的金Mn 一Co 属的化合物構成,且前述密封用玻璃材料 積%範圍内之前述雷射吸收材。 3狀㈠〇體 如申請專利範圍第⑴項中任 ^ <具有密封材料層 之玻璃構件,其中,前述密封玻璃 ZnO、R Γ> λ. ^ 尺進—步從Si02、 2 3'Al2〇3、WO”_3,2〇5、Ti〇2、 34 4. 201034846 Zr02、Li2〇、他2〇、Κ2〇、Cs20、MgO、CaO、SrO 及BaO所構成群組中至少選擇丨種,依質量比例計,含 有範圍在15%以下。 5· —種具有密封材料層之玻璃構件之製造方法,其特徵在 於包括有: 準備具有密封區域之玻璃基板的步驟; 在如述玻璃基板的前述密封區域上,將含有密封玻 璃、低膨脹填充材及雷射吸收材的密封用玻璃材料之糊 劑施行塗佈的步驟,且該密封玻璃依質量比例計,含 有.20〜68% 的 SnO、〇·5〜5%的 Sn02及20〜40%的 P2〇5 ; 以及 將前述糊劑的塗佈層施行燒成,形成殘留碳量依質 量比例計,係在20〜1 〇〇〇ppm範圍内的密封材料層的步 驟。 6. 如申請專利範圍第5項之具有密封材料層之玻璃構件之 製造方法,其中,使用含有有機物及礙中至少一者來當 作碳源的刖述密封玻璃,在前述塗佈層的燒成步驟中, 使源自如述奴源的一部分碳殘留於前述密封材料層中。 7. 如申請專利範圍第5或6項之具有密封材料層之破璃構 件之製造方法,其中,前述低膨脹填充材係由從二氧化 石夕、氧化銘、二氧化錯、石夕酸錯、蓳青石、填酸錐系化 合物、鈉鈣玻璃及硼矽酸破璃所構成群組中至少選擇i 種構成,且前述密封用破璃材料含有卜雜奶範圍内 之前述低膨脹填充材。 35 201034846 8.如申請專利範圍第5至7項中任_項之具有密封材料層 之玻璃構件之製造方法,其中,前述雷射吸收材係由從 Fe Cr、Mn、Co、Ni及Cu所構成群組中至少選擇丨種的 金屬、或含前述金屬的化合物構成,且前述密封用玻璃 材料含有0.1〜10體積%範圍内之前述雷射吸收材。 9·如申請專利範圍第5至8項中任—項之具有密封材料層 之玻璃構件之製造方法,其中,前述密封玻璃係更進一 步從 Si02、Zno、B2 〇3、Al2 〇3、W〇3、M〇〇3、Nb2 〇5、 Ti02、ΖΚ)2、Li20、Na20、K2〇、Cs2〇、Mg〇、Ca〇、 SrO及BaO所構成群組中至少選擇丨種,依質量比例計, 含有範圍在15%以下。 10. —種電子裝置,其特徵在於具備有: 第1玻璃基板,其具有·具電子元件的元件形成區 域、及設置於前述元件形成區域外周側的第丨密封區域; 第2玻璃基板,其具有對應於前述第1玻璃基板之前 述第1密封區域的第2密封區域;以及 密封層,其將前述第1玻璃基板的前述第丨密封區 域、與前述第2玻璃基板的前述第2密封區域之間,以在 前述元件形成區域上設置間隙之情況下進行密封的方 式形成,且前述密封層係由含有密封玻璃、低膨脹填充 材及雷射吸收材的始、封用玻璃材料之炼融固接層構成, 其中,前述密封玻璃依質量比例計,含有:2〇〜68% 的SnO、〇·5〜5%的Sn〇2及20〜40。/。的PA5,且前述密封層 中的殘留碳量依質量比例計,係在20〜l〇〇〇ppm範圍内。 36 201034846 11.如申請專利範圍㈣奴電子裝置,其巾,前述密封玻 璃係更進-步從Si〇2、Zn0、b2〇3、Ai2〇3、w〇、 Mo〇3 Nb2 05、Ti〇2、Zr〇2、Li2 〇、Na2 Ο、κ2 〇、Cs2 O、 MgO、CaO、SrO及BaO所構成群組中至少選擇丨種,依 質量比例計,含有範圍在15%以下。 12·如申請專利範圍第10或U項之電子裝置,其中,前述電 子元件係有機EL元件或太陽電池元件。 13. —種電子裝置之製造方法,其特徵在於包括有: 準備第1玻璃基板的步驟,該第丨玻璃基板係具有: 具電子元件的元件形成區域、及設置於前述元件形成區 域外周側的第1密封區域; 準備含有第2密封區域與密封材料層的第2玻璃基 板之步驟,該第2密封區域係對應於前述第1玻璃基板的 前述第1密封區域;該密封材料層係形成於前述第2密封 區域上’且由含有密封玻璃、低膨脹填充材及雷射吸收 材的密封用玻璃材料之燒成層構成,且殘留碳量依質量 比例計,係在20~1000ppm範圍内,該密封玻璃依質量 比例計,含有:20〜68%的SnO、0.5〜5%的Sn02及20~40〇/〇 的 P205 ; 在前述元件形成區域上形成間隙的情況下,隔著前 述密封材料層將前述第1玻璃基板與前述第2玻璃基板 進行積層的步驟;以及 透過前述第2玻璃基板對前述密封材料層施行雷射 光照射,使前述密封材料層熔融,而形成將前述第1玻 37 201034846 璃基板與前述第2玻璃基板間進行密封之密封層的步 驟。 14. 如申請專利範圍第13項之電子裝置之製造方法,其中, 前述密封玻璃係更進一步從Si02、Zn0、B203、Al2〇3、 W03、Mo〇3、Nb205、Ti〇2、Zr〇2、Li20、Na20、 K20、Cs20、MgO、CaO、SrO及BaO所構成群組中至 少選擇1種,依質量比例計,含有範圍在15%以下。 15. 如申請專利範圍第13或14項之電子裝置之製造方法,其 中,前述電子元件係有機EL元件或太陽電池元件。 38201034846 VII. Patent application scope: 1. A glass member having a sealing material layer, comprising: a glass substrate having a sealing region; and a sealing material layer disposed on the sealing region of the glass substrate, and It is composed of a fired layer of a sealing glass material containing a sealing glass, a low-expansion filler, and a laser absorbing material, wherein 'the sealing glass contains: sn0, 〇.5~ of 20 to 68 〇/〇 according to the mass ratio. 5% of _2 and 20 to 40% of p2〇5, and the amount of residual carbon in the aforementioned sealing material layer is in the range of 2 (M _ppm by mass ratio. 2. Sealed as in the patent application range W) a glass member of a material layer, wherein the low-expansion filler is composed of cerium oxide, aluminum oxide, zirconium dioxide, cerium lanthanum silicate, cordierite, lanthanum phosphate compound, glass, and silicate glass. The first low-expansion filler is formed in the glass material for sealing. '% by volume 3. ^ Patent application No. 1 or 2 of the glass member having a sealed (four) layer' wherein the laser absorbing material is selected from at least a group consisting of ^& Ni and Cu The gold Mn-Co compound is composed of the above-mentioned laser absorbing material in the range of % of the sealing glass material. The 3-shaped (1) carcass is as claimed in the item (1) of the patent application, and the glass member having the sealing material layer, wherein the sealing glass ZnO, R Γ > λ. ^ is advanced from SiO 2 , 2 3 'Al 2 〇 3, WO"_3,2〇5, Ti〇2, 34 4. 201034846 Zr02, Li2〇, he 2〇, Κ2〇, Cs20, MgO, CaO, SrO and BaO are at least selected from the group. The mass ratio meter has a content range of 15% or less. 5. A method for producing a glass member having a sealing material layer, comprising: a step of preparing a glass substrate having a sealing region; and the aforementioned sealing of the glass substrate as described a step of applying a paste of a sealing glass material containing a sealing glass, a low-expansion filler, and a laser absorbing material, and the sealing glass contains .20 to 68% of SnO and strontium by mass ratio. 5 to 5% of Sn02 and 20 to 40% of P2〇5; and the coating layer of the paste is fired to form a residual carbon amount in a range of 20 to 1 〇〇〇ppm. Step of sealing the material layer. 6. If the patent application scope is 5 A method for producing a glass member having a sealing material layer, wherein a sealing glass containing at least one of an organic substance and a hindrance is used as a carbon source, and in the baking step of the coating layer, A part of the carbon of the source of the slave is left in the layer of the sealing material. 7. The method for producing a glass member having a sealing material layer according to claim 5 or 6, wherein the low expansion filler is from the second oxidation At least one type of composition is selected from the group consisting of Shi Xi, Oxidation, Dioxin, Oxalic Acid, Cordierite, Acidic Cone, Sodium Calcium Glass and Boric Acid Glass, and the aforementioned sealing glass The method of manufacturing a glass member having a sealing material layer according to any one of claims 5 to 7 wherein the material comprises the above-mentioned low-expansion filler. It is composed of a metal selected from the group consisting of Fe Cr, Mn, Co, Ni, and Cu, or a compound containing the above metal, and the sealing glass material is contained in the range of 0.1 to 10% by volume. The method of manufacturing a glass member having a sealing material layer according to any one of claims 5 to 8, wherein the sealing glass system is further from SiO 2 , Zno, B 2 〇 3, and Al 2 . At least 丨3, W〇3, M〇〇3, Nb2 〇5, Ti02, ΖΚ2, Li20, Na20, K2〇, Cs2〇, Mg〇, Ca〇, SrO, and BaO According to the mass ratio, the content range is below 15%. 10. An electronic device comprising: a first glass substrate having an element forming region having an electronic component; and a second sealing region provided on an outer peripheral side of the element forming region; and a second glass substrate; a second sealing region corresponding to the first sealing region of the first glass substrate; and a sealing layer that is the second sealing region of the first glass substrate and the second sealing region of the second glass substrate The sealing layer is formed by providing a gap in the element forming region, and the sealing layer is fused by a sealing glass material including a sealing glass, a low expansion filler, and a laser absorbing material. The sealing layer is composed of: 2 to 68% of SnO, 55 to 5% of Sn 2 and 20 to 40 by mass ratio. /. The amount of residual carbon in the sealing layer in the above-mentioned sealing layer is in the range of 20 to 1 〇〇〇 ppm. 36 201034846 11. As claimed in the patent scope (4) slave electronic device, the towel, the aforementioned sealing glass system further advances from Si〇2, Zn0, b2〇3, Ai2〇3, w〇, Mo〇3 Nb2 05, Ti〇 2. At least a selected species of Zr〇2, Li2〇, Na2Ο, κ2〇, Cs2 O, MgO, CaO, SrO, and BaO is included, and the content ranges from 15% or less in terms of mass ratio. 12. The electronic device of claim 10, wherein the electronic component is an organic EL component or a solar cell component. 13. A method of manufacturing an electronic device, comprising: a step of preparing a first glass substrate, the second glass substrate having: an element formation region having an electronic component; and an outer peripheral side of the component formation region a first sealing region; a step of preparing a second glass substrate including a second sealing region and a sealing material layer, wherein the second sealing region corresponds to the first sealing region of the first glass substrate; and the sealing material layer is formed on The second sealing region is formed of a fired layer of a sealing glass material containing a sealing glass, a low-expansion filler, and a laser absorbing material, and the residual carbon amount is in the range of 20 to 1000 ppm. The sealing glass contains: 20 to 68% of SnO, 0.5 to 5% of Sn02, and 20 to 40 Å/〇 of P205 by mass ratio; in the case where a gap is formed in the element forming region, the sealing material is interposed a step of laminating the first glass substrate and the second glass substrate; and irradiating the sealing material layer with laser light through the second glass substrate to cause the aforementioned Sealing material layer is melted to form the sealing step of the sealing layer between the first glass 37201034846 glass substrate and the second glass substrate step. 14. The method of manufacturing an electronic device according to claim 13, wherein the sealing glass system further comprises from SiO 2 , Zn 0 , B 203 , Al 2 〇 3 , W 03 , Mo 〇 3 , Nb 205 , Ti 〇 2 , Zr 〇 2 At least one selected from the group consisting of Li20, Na20, K20, Cs20, MgO, CaO, SrO, and BaO, and the content range is 15% or less in terms of mass ratio. 15. The method of manufacturing an electronic device according to claim 13 or claim 14, wherein the electronic component is an organic EL device or a solar cell device. 38
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CN111867992B (en) * 2018-03-09 2022-12-06 Agc株式会社 Alkali-free glass substrate

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