201030955 六、發明說明： 【發明戶斤屬之技術領織】 發明領域 本發明係有關於一種攝像基板之加工方法。 【先前技術]1 發明背景 近年對半導體元件之高機能化、小型化之要求曰益顯 著。與反應此要求之封裝技術相關者已提出有將形成有複 數個半導體晶片之晶圓直接以晶圓之形態層積接合之後 切斷之半導體裝置之製造方法的W〇w(Wafer Wafe〇。 又’伴隨WOW等半導體晶片之三維層積化而產生之電極構 造亦板出與於形成在晶圓之導通孔形成電極之貫穿電極相 關的技術(參照專利文獻1)。以此WOW製造之半導體裝置中 亦包含CCD或C-MOS等之攝像元件。 而在於研磨步驟後進行晶片分割之平常程序中，進行 以下步驟，即，於研磨時貼保護膠帶，進行研磨，之後， 將晶圓重貼於切割膠帶，於切割後，從切割膠帶拾取。是 故，將保護膠帶貼合於保持面側來進行研磨未特別有問 題。這是由於最終是以拾取步驟將晶片從膠帶剝離之故。 【專利文獻1】日本專利公開公報2007_67082號 【明内溶1】 發明揭示 發明欲解決之課題 然而’在wow等中，反覆進行於作為基座之基板層積 201030955 晶圓’進行研磨ϋ，層積新的晶圓，進行研磨之步 驟。特別是攝像元件於表面具有蓋玻璃基板，此蓋玻璃基 板之表面及進行了研磨之元件層表面皆避賴污或傷痕。 這是由於蓋玻璃基板係將光取入至攝像元件之部份元件 層表面需與下個新層積之元件層進行電性接合之故。是 故，無法如平常程序般，於晶圓貼保護膠帶，來進行研磨。 這是由於貼保護膠帶最後將保護膠帶剝離之際需保持反側 之面之故。 本發明即是鑑於上述而發明者，其目的係提供可不使 用保護膠帶，賴攝絲板施行形成攝像元件之加工的攝 像基板之加工方法。 用以欲解決課題之手段 為解決上述課題，達成目的，本發明係於蓋玻璃基板 層積死》成有元件層之元件基板的攝像基板之加工方法，其 特徵在於，該攝像基板之加工方法具有溶解性樹脂層形成 步驟吸附步驟、研磨步驟、及洗淨步驟，該溶解性樹脂 層形成步驟係於前述蓋玻璃基板之表面以可以洗淨液溶解 之樹脂形成溶解性樹脂層者；該吸附步驟係於該溶解性樹 月曰層形成步驟後，將前述溶解性樹脂層吸附至研磨台者； 5亥研磨步驟係於該吸附步驟後，將前述元件基板研磨者； 該洗淨步驟係於該研磨步驟後，在使前述元件基板之被研 磨面與前述蓋玻璃基板之表面露出之狀態下，將前述洗淨 液供給至前述元件基板之被研磨面與前述蓋玻璃基板之表 面而洗淨者。 201030955 χ ’本發明之攝像基板之加卫方法係在上述發明中， 具有於前述洗淨步驟後，於前述攝像基板之前述元件層上 層積形成有另-元件層之新元件基板的層積步驟；於該層 積步驟後’依序反覆進行前述溶解性樹脂層形成步驟、前 述吸附步驟、前述研磨步驟及前述洗淨步驟。 發明效果 根據本發明，可提供可不使用保護膠帶，而對攝像基 板施行形成攝像元件之加工的攝像基板之加工方法。 ❹ 【實施方式】 用以實施發明之最佳形態 以下’參照圖式，就本發明之攝像基板之加工方法作 說明。首先，就要以本實施形態之攝像基板之加工方法製 造之攝像元件作說明。第1圖係顯示攝像元件之影像之外觀 立體圖。第2圖係其縱斷側面圖。此攝像元件⑽概略地於 蓋玻璃基板2以WOW程序使複數層元件層3a、3b、. ·.、 3n依序電性連接並層積者。又，蓋玻璃基板2作為光取入部 份。此外，攝像元件1全體係呈晶圓狀者，第丨圖及第2圖係 將厚度、尺寸等誇張顯示者。 接著，參照第3圖，就用以藉w〇w程序生成此種攝像 元件1之加工方法作說明。第3圖係將攝像基板之加工方法 以步驟順序顯示之概略縱斷側面圖。首先，如第3(a)圖所 示，準備蓋玻璃基板2'及具有元件層3a之元件基板3A〇然 後，如第3(b)圖所示，藉使形成有元件層3a之元件基板3A 層積於蓋玻璃基板2，準備作為基底之攝像基板4A。 201030955 接著’如第3(c)圖所示，於攝像基板4A之蓋破璃基板2 之表面2a以不致以在後步驟之研磨步驟使用的研磨水溶 解’而可以在洗淨步驟使用之洗淨液溶解之樹脂形成溶解 性樹脂層5(溶解性樹脂層形成步驟）。即，若在洗淨步驟使 用驗性洗淨水時，溶解性樹脂層5以可以鹼性洗淨性溶解之 樹脂形成。又’後步驟之研磨步驟之最終研磨sCMp(Che mical Mechanical Polishing)時，由於游離研磨粒（漿體）係 驗故在洗淨步驟，使用酸性洗淨水，而溶解性樹脂層5 只要為可以酸性洗淨液溶解之樹脂形成即可。 然後’如第3(d)圖所示，藉使溶解性樹脂層5吸附至研 磨台11，使攝像基板4A以元件基板3A露出至上面側之狀態 保持（吸附步驟）。研磨台丨丨具有多孔 質性吸附部12,以圖中 未不之負壓源吸附溶解性樹脂層5。此時，由於溶解性樹脂 層5為吸附部12吸附，故蓋玻璃基板2之表面2a不致直接接 觸吸附部12。 此外’在該等步驟，為將蓋玻璃基板2、元件基板3A、 進一步為攝像基板4A等（總稱該等為對象物W)保持而搬 送’適宜組合第4圖及第5圖所示之邊緣承接搬送機構21及 第6圖所*之邊緣崎搬送機構31來使用 即可。 第4圖係顯示邊緣承接搬送機構21之形狀之平面圖，第 面圖。此邊緣承接搬送機構21係使於兩側具 有將圓板狀對象物w中央部附近兩側之下側邊緣We以線接 觸狀態承接之圓弧狀斜面部22的帶狀保持體23搭載於搬送 ^24上者。第6圖係顯示邊緣鉗緊搬送機構31之構造的概略 201030955 正面圖。此邊緣鉗緊搬送機構31係使複數個、例如3個引導 輥32以在圓板狀對象物w周緣部附近於半徑方向移動自如 :狀態搭載於搬送臂33之下部者。在此，引導㈣係形成 4κ向V字形者，並構造成不論對象物w之厚度為何可將其 上下兩側之邊緣We以點接觸狀態鉗緊。又，3個引導輥Μ 與邊緣承接搬送機構21之關係係配置成可對應於第4圖甲 所丁之A、B、C3點。是故，可使以邊緣承接搬送機構21搬 送保持之對象物W在不干擾保持體23下，交遞至邊緣鉗緊 搬送機構31之各引導|昆32而鉗緊。藉此，可使對象物w在 不接觸其上下兩面下保持而搬送至所期之處理部。 再返回第3圖說明。在吸附步驟後，如第3(e)圖所示， 將吸附保持在研磨台11之攝像基板4A之元件基板3A研磨 (研磨步驟）。即’將具有於下面具有磨石42，並高速旋轉之 磨輪43之研磨機構41定位於元件基板3A之上面，俾使磨石 42之外周邊緣部份位於元件基板3A之中心。然後’將研磨 水供給至研磨部份’同時，一面使磨石42與攝像基板4A相 對地高速旋轉’ 一面使研磨石42逐漸下降，而研磨元件基 板3A。藉此，呈元件層3a露出至元件基板3A之被研磨面之 狀態。 接著，將業經研磨之攝像基板4A搬送至洗淨部，如第 3(f)圖所示，在使元件基板3A之被研磨面（即，元件層3a)與 蓋玻璃基板2之表面2a露出之狀態下，將洗淨液供給至元件 基板3A之被研磨面（即，元件層3a表面）及蓋玻璃基板2之表 面2a(即，溶解性樹脂層5)來洗淨（洗淨步驟）。以此洗淨步 201030955 驟’蓋玻璃基板2之表面2a之溶解性樹脂層5以洗淨液55溶 解殆盡。 在此洗淨步驟，以邊緣鉗緊機構51保持攝像基板4A。 第7圖係顯示洗淨步驟用邊緣鉗緊機構5丨之結構例之概略 平面圖。此邊緣鉗緊機構51係將複數個、例如3個引導輥52 以在圓板狀對象物W周緣部附近於半徑方向移動自如之狀 態設置者。在此，引導輥52係形成橫向V字形，並以在水平 面内旋轉驅動自如之狀態支撐者，構造成不論攝像基板4八 之厚度為何，可將其上下兩側之邊緣扑以點接觸狀態钳 緊。是故，邊緣鉗緊機構51使攝像基板4A在不接觸其上下 兩面下，以使上下兩面完全露出之狀態，將周緣部在3點旋 轉驅動自如地保持。 對保持在此種邊緣鉗緊機構51之攝像基板4八之上下兩201030955 VI. Description of the Invention: [Technical woven fabric of the invention] FIELD OF THE INVENTION The present invention relates to a method of processing an imaging substrate. [Prior Art] 1 Background of the Invention In recent years, the demand for high performance and miniaturization of semiconductor devices has been remarkable. In connection with the packaging technology that has responded to this requirement, there has been proposed a method of manufacturing a semiconductor device in which a wafer in which a plurality of semiconductor wafers are formed by directly laminating wafers in a wafer form (Wafer Wafe). The electrode structure which is formed by the three-dimensional deposition of a semiconductor wafer such as WOW is also associated with a through-electrode formed on the via hole forming electrode of the wafer (see Patent Document 1). The semiconductor device manufactured by WOW The imaging element such as CCD or C-MOS is also included. In the usual procedure for performing wafer division after the polishing step, the following steps are performed, that is, the protective tape is attached to the polishing, and the wafer is re-attached to the wafer. The dicing tape is picked up from the dicing tape after cutting. Therefore, it is not particularly problematic to apply the protective tape to the holding surface side for polishing. This is because the wafer is finally peeled off from the tape by the picking step. Document 1] Japanese Patent Laid-Open Publication No. 2007-67082 [Mingyin 1] The invention discloses a problem to be solved by the invention. However, in Wow et al. The substrate of the pedestal is laminated 201030955. The wafer is polished, and a new wafer is laminated and polished. In particular, the image sensor has a cover glass substrate on the surface, and the surface of the cover glass substrate and the polished device layer The surface is protected from dirt or scratches. This is because the cover glass substrate is required to take light into the surface of some of the component layers of the image sensor to be electrically bonded to the next newly laminated component layer. As usual, the wafer is coated with a protective tape for polishing. This is because the protective tape is required to maintain the opposite side when the protective tape is finally peeled off. The present invention has been made in view of the above, and its object is Provided is a method for processing an image forming substrate which can be processed by forming an image pickup element without using a protective tape. The means for solving the problem is to solve the above problems, and the object of the invention is to laminate the cover glass substrate into a dead body. A method of processing an imaging substrate of an element substrate having an element layer, wherein the processing method of the imaging substrate has a step of forming a soluble resin layer a step of, a polishing step, and a washing step, wherein the step of forming the soluble resin layer is performed on the surface of the cover glass substrate to form a soluble resin layer with a resin that can be dissolved in the cleaning solution; the adsorption step is based on the solubility tree After the ruthenium layer forming step, the soluble resin layer is adsorbed to the polishing table; the 5 ray polishing step is performed after the adsorption step, and the element substrate is polished; the cleaning step is after the polishing step, and the When the surface to be polished of the element substrate and the surface of the cover glass substrate are exposed, the cleaning liquid is supplied to the surface to be polished of the element substrate and the surface of the cover glass substrate to be cleaned. 201030955 χ 'The present invention In the above invention, the image forming substrate has a lamination step of laminating a new element substrate on which another element layer is formed on the element layer of the imaging substrate after the cleaning step; The above-described step of forming the soluble resin layer, the adsorption step, the polishing step, and the washing step are sequentially performed in sequence. Advantageous Effects of Invention According to the present invention, it is possible to provide a method of processing an image pickup substrate which can perform processing for forming an image pickup element on an image pickup substrate without using a protective tape. [Embodiment] Best Mode for Carrying Out the Invention Hereinafter, a method of processing an image pickup substrate of the present invention will be described with reference to the drawings. First, an image pickup element manufactured by the image forming substrate processing method of the present embodiment will be described. Fig. 1 is a perspective view showing the appearance of an image of an image pickup element. Figure 2 is a longitudinal side view of the same. The image pickup element (10) is roughly connected to the cover glass substrate 2 by a WOW program to electrically connect and laminate the plurality of layer element layers 3a, 3b, . . . , 3n in sequence. Further, the cover glass substrate 2 serves as a light take-in portion. Further, the entire imaging element 1 is in the form of a wafer, and the second and second figures are exaggerated in thickness and size. Next, referring to Fig. 3, a description will be given of a processing method for generating such an image pickup element 1 by the program of w〇w. Fig. 3 is a schematic longitudinal side view showing the processing method of the image pickup substrate in the order of steps. First, as shown in Fig. 3(a), the cover glass substrate 2' and the element substrate 3A having the element layer 3a are prepared, and then, as shown in Fig. 3(b), the element substrate on which the element layer 3a is formed is formed. 3A is laminated on the cover glass substrate 2, and the imaging substrate 4A as a base is prepared. 201030955 Next, as shown in FIG. 3(c), the surface 2a of the cover glass substrate 2 of the image pickup substrate 4A can be washed in the washing step without being dissolved by the polishing water used in the polishing step of the subsequent step. The resin in which the clean solution is dissolved forms the soluble resin layer 5 (soluble resin layer forming step). In other words, when the wash water is used in the washing step, the soluble resin layer 5 is formed of a resin which can be dissolved by alkaline washing. In the final polishing step sCMp (Che mical Mechanical Polishing), the free abrasive grains (slurry) are used in the washing step, and acidic washing water is used, and the soluble resin layer 5 is only required. The resin in which the acidic cleaning solution is dissolved may be formed. Then, as shown in the third (d), the soluble resin layer 5 is adsorbed to the polishing table 11, and the image pickup substrate 4A is held in the state in which the element substrate 3A is exposed to the upper surface side (adsorption step). The polishing table has a porous adsorbing portion 12, and the soluble resin layer 5 is adsorbed by a negative pressure source. At this time, since the soluble resin layer 5 is adsorbed by the adsorption portion 12, the surface 2a of the cover glass substrate 2 does not directly contact the adsorption portion 12. In addition, in these steps, in order to hold the cover glass substrate 2, the element substrate 3A, and further the imaging substrate 4A (collectively referred to as the object W), it is suitable to combine the edges shown in FIGS. 4 and 5 It is sufficient to use the transport mechanism 21 and the edge-strip transport mechanism 31 of FIG. Fig. 4 is a plan view showing a shape of the edge receiving conveying mechanism 21, and a plan view. The edge receiving and conveying mechanism 21 is provided with a belt-shaped holding body 23 having an arc-shaped inclined surface portion 22 that receives the arcuate inclined surface portion 22 in a line contact state in the vicinity of the lower edge side of the center portion of the disk-shaped object w on both sides. ^24 on the top. Fig. 6 is a view showing the outline of the structure of the edge-clamping conveying mechanism 31. 201030955 Front view. In the edge-clamping conveyance mechanism 31, a plurality of, for example, three guide rollers 32 are moved in the radial direction in the vicinity of the peripheral edge portion of the disk-shaped object w, and the state is mounted on the lower portion of the transfer arm 33. Here, the guide (four) is formed into a V-shaped V-shaped body, and is configured such that the edge We of the upper and lower sides can be clamped in a point contact state regardless of the thickness of the object w. Further, the relationship between the three guide rollers Μ and the edge receiving transport mechanism 21 is arranged so as to correspond to the points A, B, and C3 of Fig. 4 . Therefore, the object W conveyed and held by the edge receiving conveyance mechanism 21 can be handed over to the guides of the edge-clamping conveyance mechanism 31 without being disturbed by the holder 23, and clamped. Thereby, the object w can be held by the upper and lower surfaces without being contacted, and can be transported to the desired processing unit. Return to the description in Figure 3. After the adsorption step, as shown in Fig. 3(e), the element substrate 3A which is adsorbed and held on the imaging substrate 4A of the polishing table 11 is polished (polishing step). Namely, the polishing mechanism 41 having the grinding wheel 43 having the grindstone 42 underneath and rotating at a high speed is positioned on the upper surface of the element substrate 3A so that the outer peripheral edge portion of the grindstone 42 is located at the center of the element substrate 3A. Then, the polishing water is supplied to the polishing portion, and while the grindstone 42 is rotated at a high speed opposite to the image pickup substrate 4A, the polishing stone 42 is gradually lowered to polish the element substrate 3A. Thereby, the element layer 3a is exposed to the surface to be polished of the element substrate 3A. Then, the imaged substrate 4A that has been polished is transferred to the cleaning portion, and as shown in FIG. 3(f), the surface to be polished (ie, the element layer 3a) of the element substrate 3A and the surface 2a of the cover glass substrate 2 are exposed. In this state, the cleaning liquid is supplied to the surface to be polished (that is, the surface of the element layer 3a) of the element substrate 3A and the surface 2a of the cover glass substrate 2 (that is, the soluble resin layer 5) to be washed (washing step). . In this step, the soluble resin layer 5 covering the surface 2a of the glass substrate 2 is dissolved by the cleaning liquid 55. In this washing step, the image pickup substrate 4A is held by the edge clamping mechanism 51. Fig. 7 is a schematic plan view showing a configuration example of the edge clamping mechanism 5' for the washing step. In the edge nip mechanism 51, a plurality of, for example, three guide rollers 52 are movably moved in the radial direction in the vicinity of the peripheral edge portion of the disk-shaped object W. Here, the guide roller 52 is formed in a lateral V shape and supported by a state in which it is rotationally driven in a horizontal plane, and is configured such that the edge of the upper and lower sides can be punctuated with a point contact state regardless of the thickness of the imaging substrate 4 tight. Therefore, the edge clamping mechanism 51 causes the imaging board 4A to be held in a state where the upper and lower surfaces are completely exposed without being in contact with the upper and lower surfaces, and the peripheral portion is rotationally driven at three points. For the image substrate 4 held above the edge clamping mechanism 51
面配設供給洗淨液55之洗淨液喷嘴56。又，對攝像基板4A 之上下兩面，接觸從中心部至半徑方向之全域範圍之海綿 輥57旋轉自如地配置。是故，在洗淨步驟中一面以引導 輥52之旋轉驅動使攝像基板4A如第7圖中箭號所示旋轉，一 面將洗淨液55供給至元件基板3八之被研磨面（即元件層％ 表面）及蓋玻璃基板2之表面2a(即，溶解性樹脂層5)，同時， 藉使海綿輥57追隨旋轉，而可以洗淨液55洗淨攝像基板4a 兩面。在此種洗淨步驟，攝像基板3A為3點支撐，與薄晶圓 基板之情形不同，由於包含比較厚之蓋玻璃基板2，故可無 障礙地支撐。 如第3(g)圖所示，以此種洗淨步驟，由可以洗淨液％ 201030955 溶解之樹脂構成之溶解性樹脂層5溶解殆盡，而形成蓋玻璃 基板2與元件層3a殘留之攝像基板4A。是故，準備具有與元 件層3a不同之元件層3b之元件基板3B。 然後，如第3(h)圖所示，使形成有另一元件層处之新元 件基板3B層積於由蓋玻璃基板2及元件層3a構成之攝像基 板4A上，作為攝像基板4B(層積步驟）。在此層積步驟，對 元件層3a使元件層3b以電性接合之狀態層積。 藝 之後依序同樣地反覆進行前述溶解性樹脂層形成步 驟、吸附步驟、研磨步驟、洗淨步驟、進一步為層積步驟 至必要之元件層之層數量（至元件層3n之處理為止）。如此進 行，根據本實施形態，可不使用保護膠帶，以w〇w程序對 攝像基板施行形成攝像元件丨之加工。 本發明不限於上述實施形態，只要為不脫離本發明旨 趣之範圍，可進行各種變形。在上述說明中，以用以形成 具有多層元件層3a〜3n之攝像裝置丨之加工方法之例來說 〇 明，可不限此種多層構造而應用之。舉例言之，若為僅以j 層元件層3a完成之攝像元件時，以第3(a)圖〜第3(〇圖所示之 處理結束即可。 【圖式簡單說^明】 第1圖係顯示在本發明實施形態作為對象之攝像元件 之影像的外觀立體圖。 第2圖係第1圖之攝像元件之縱斷側面圖。 第3圖係將攝像基板之加工方法以步驟順序顯示之概 略縱斷側面圖。 201030955 第4圖係顯示邊緣承接搬送機構之形狀之平面圖。 第5圖係邊緣承接搬送機構之縱斷正面圖。 第6圖係顯示邊緣鉗緊搬送機構之構造之概略正面圖。 第7圖係顯示洗淨步驟用邊緣鉗緊機構之構成例之概 略平面圖。 【主要元件符號說明】 1...攝像元件 24,33…搬送臂 2...蓋玻璃基板 31...邊緣鉗緊搬送機構 2a...表面 32,52...引導輥 3a-3n...元件層 41...研磨機構 3A,3B...元件基板 42…磨石 4A,4B...攝像基板 43…磨輪 4e...邊緣 51...邊緣鉗緊機構 5...溶解性樹脂層 55...溶解性樹脂層 11...研磨台 56...洗淨液喷嘴 12...吸附部 57...海綿輥 21...邊緣承接搬送機構 A-C ·..點 22...圓弧狀斜面部 W...對象物 23...保持體 We...下側邊緣A cleaning liquid nozzle 56 for supplying the cleaning liquid 55 is disposed on the surface. Further, the upper and lower surfaces of the image pickup substrate 4A are rotatably disposed in contact with the sponge roller 57 in the entire range from the center portion to the radial direction. Therefore, in the cleaning step, the image pickup substrate 52 is rotated by the rotation of the guide roller 52, and the cleaning liquid 55 is supplied to the polished surface of the element substrate 3 (i.e., the element) while rotating as shown by the arrow in Fig. 7 . The layer % surface) and the surface 2a of the cover glass substrate 2 (i.e., the soluble resin layer 5), and the sponge roller 57 follow the rotation, so that the cleaning liquid 55 can clean both sides of the image pickup substrate 4a. In the cleaning step, the imaging substrate 3A is supported at three points, and unlike the case of the thin wafer substrate, since the relatively thick cover glass substrate 2 is included, it can be supported without any trouble. As shown in Fig. 3(g), in this washing step, the soluble resin layer 5 composed of a resin which can be dissolved in the cleaning liquid % 201030955 is dissolved, and the cover glass substrate 2 and the element layer 3a are formed. The imaging substrate 4A. Therefore, the element substrate 3B having the element layer 3b different from the element layer 3a is prepared. Then, as shown in Fig. 3(h), the new element substrate 3B on which the other element layer is formed is laminated on the image pickup substrate 4A composed of the cover glass substrate 2 and the element layer 3a as the image pickup substrate 4B (layer Product step). In this lamination step, the element layer 3a is laminated in a state of being electrically joined to the element layer 3a. After the process, the above-mentioned soluble resin layer forming step, adsorption step, polishing step, washing step, and further the number of layers of the element layer (to the processing of the element layer 3n) are repeated in the same manner. In this way, according to the present embodiment, the processing of forming the image pickup element can be performed on the image pickup substrate by using the protective tape without using a protective tape. The present invention is not limited to the above embodiments, and various modifications can be made without departing from the scope of the invention. In the above description, an example of a processing method for forming an image pickup device having the multilayer element layers 3a to 3n is not limited to such a multilayer structure. For example, in the case of an imaging element that is completed only by the j-layer element layer 3a, the processing shown in Fig. 3(a) to Fig. 3 (the processing shown in the figure is completed. [Simple description of the figure] 1st The figure shows an external perspective view of an image of an imaging element to be used in an embodiment of the present invention. Fig. 2 is a longitudinal side view of the imaging element of Fig. 1. Fig. 3 shows a method of processing an imaging substrate in the order of steps. 201030955 Fig. 4 is a plan view showing the shape of the edge receiving conveying mechanism. Fig. 5 is a longitudinal front view of the edge receiving conveying mechanism. Fig. 6 is a schematic front view showing the structure of the edge clamping conveying mechanism. Fig. 7 is a schematic plan view showing a configuration example of the edge clamping mechanism for the washing step. [Description of main components] 1: image pickup device 24, 33... transfer arm 2... cover glass substrate 31.. Edge-clamping conveying mechanism 2a... surface 32, 52... guiding roller 3a-3n... component layer 41...grinding mechanism 3A, 3B...component substrate 42...grinding stone 4A, 4B.. Imaging substrate 43...grinding wheel 4e...edge 51...edge clamping mechanism 5...soluble resin layer 55...Soluble resin layer 11: polishing table 56...washing liquid nozzle 12...adsorption portion 57...sponge roller 21...edge receiving conveying mechanism AC ·.. point 22: Arc-shaped slant surface W...object 23...main body We...lower side edge
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