TW201029145A - Light-emitting device - Google Patents

Light-emitting device Download PDF

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Publication number
TW201029145A
TW201029145A TW098135508A TW98135508A TW201029145A TW 201029145 A TW201029145 A TW 201029145A TW 098135508 A TW098135508 A TW 098135508A TW 98135508 A TW98135508 A TW 98135508A TW 201029145 A TW201029145 A TW 201029145A
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TW
Taiwan
Prior art keywords
light
diode
blue
emitting
array
Prior art date
Application number
TW098135508A
Other languages
Chinese (zh)
Other versions
TWI445156B (en
Inventor
Chao-Hsing Chen
Schang-Jing Hon
Alexander Chan Wang
Li-Tian Liang
Chin-Yung Fan
Chien-Kai Chung
Min-Hsun Hsieh
Original Assignee
Epistar Corp
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Application filed by Epistar Corp filed Critical Epistar Corp
Priority to TW098135508A priority Critical patent/TWI445156B/en
Publication of TW201029145A publication Critical patent/TW201029145A/en
Application granted granted Critical
Publication of TWI445156B publication Critical patent/TWI445156B/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H01L2224/241—Disposition
    • H01L2224/24135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/24137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73267—Layer and HDI connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92244—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a build-up interconnect

Abstract

This invention discloses a light-emitting device capable of being applied with an alternative current directly, comprising a submount; at least one electronic element located on the submount; at least one light-emitting diode array chips located on the submount; at least one bonding pad located on the submount, and a conductive trace on the submount, wherein the conductive trace is electrically connected with the electronic element, the light-emitting diode array chip, and bonding pad.

Description

201029145 六、發明說明： 【發明所屬之技術領域】 本發明揭示一種發光元件，特別是關於一種於一次載體上至少 包含一電子元件與至少一顆發光二極體陣列晶片並且可直接用於 交流電之發光元件。 、 【先前技術】 發光二極體(light-emitting diode, LED)的發光原理是利用電子 在η型半導體與p型半導體間移動的能量差，以光的形式將能量 ® 釋放，這樣的發光原理係有別於白熾燈發熱的發光原理，因此發 光二極體被稱為冷光源。此外，發光二極體具有高耐久性、壽命 長、輕巧、耗電量低等優點，因此現今的照明市場對於發光二極 體寄予厚望，將其視為新一代的照明工具，已逐漸取代傳統光源， 並且應用於各種領域，如交通號諸、、背光模組、路燈昭明、醫 設備等。 … ” 第1圖為習知可用於交流電源之發光二極體照明元件結構示意 圖，如第1圖所示，習知可用於交流電源之發光二極體照明元件 100包含一次載體(submount)10、一位於次載體10上之發光二極 φ 體陣列晶片I2,以及至少一焊墊14與上述之發光二極體陣列晶片 12形成電性連接，其中上述之發光二極體陣列晶片12至少包含一 基板120以及複數位於基板120上之發光二極體單元122。 若欲將上述習知可用於交流電源之發光二極體照明元件1 〇〇直 接取代一般照明裝置，此發光二極體照明元件1〇〇必須在1〇〇伏 特至240伏特之高電壓環境工作，而長時間處於工作狀態之發光 二極體照明元件100容易產生溫度過高之問題。在上述高溫高電 流(壓)的環境中’電子元件往往容易產生電致遷移效應(electr〇n migration effect)，所謂「電致遷移效應」係指經由溫度和電子風 (electron wind)加乘效應所造成之金屬離子的移動。一般而言，溫 度愈咼愈容易發生金屬離子的電遷移現象。於發光二極體元件 3 201029145 I，’ f溫打會麟金屬料從電極錄至活性區 f料(s°ider)或則、金屬連結亦可能因為電致遷 移效應產生二洞(V〇id)，進而導致元件斷路。 爾Λ上λ描述可知，高溫高電流(壓)之工作環境大大地降低了可 用於父流電源之發光二極體照明元件的可靠度。 【發明内容】 本發明之主要目的係在於提供一種發光元件， 一201029145 VI. Description of the Invention: [Technical Field] The present invention discloses a light-emitting element, and more particularly to a chip comprising at least one electronic component and at least one light-emitting diode array on a primary carrier and can be directly used for alternating current Light-emitting element. [Prior Art] The principle of light-emitting diode (LED) is to use the energy difference between the n-type semiconductor and the p-type semiconductor to release the energy ® in the form of light. It is different from the principle of illumination of incandescent lamps, so the light-emitting diode is called a cold light source. In addition, the light-emitting diode has the advantages of high durability, long life, light weight, low power consumption, etc., so the current lighting market has high hopes for the light-emitting diode, and it is gradually replaced as a new generation of lighting tools. Light source, and is used in various fields, such as traffic numbers, backlight modules, street lamps, medical equipment, etc. Fig. 1 is a schematic view showing the structure of a light-emitting diode lighting element which can be used for an alternating current power source. As shown in Fig. 1, a light-emitting diode lighting element 100 which can be used for an alternating current power source includes a submount 10 An illuminating diode φ array wafer I2 on the sub-carrier 10, and at least one pad 14 are electrically connected to the illuminating diode array 12, wherein the illuminating diode array 12 includes at least a substrate 120 and a plurality of light emitting diode units 122 on the substrate 120. If the above-mentioned light emitting diode lighting element 1 that can be used for an alternating current power source is directly substituted for a general lighting device, the light emitting diode lighting element 1〇〇 must work in a high voltage environment of 1 volt to 240 volts, and the light-emitting diode lighting element 100 that is in a working state for a long time is prone to excessive temperature. In the above high temperature and high current (pressure) environment In the 'electronic components are often prone to electro-migration effects (electr〇n migration effect), the so-called "electro-migration effect" refers to the addition of temperature and electron wind (electron wind) The movement of metal ions caused by the multiplication effect. In general, the temperature is more and more prone to electromigration of metal ions. In the light-emitting diode element 3 201029145 I, 'f warming the metal material from the electrode to the active area f (s°ider) or the metal connection may also cause two holes due to the electromigration effect (V〇id ), which in turn causes the component to open. According to the λ description, the high temperature and high current (voltage) working environment greatly reduces the reliability of the LED lighting components that can be used for the parent flow source. SUMMARY OF THE INVENTION The main object of the present invention is to provide a light-emitting element,

==二體=接其中上述至少-顆發光二極 本，明之又一目的係提供至少一位於次載體上之焊墊(bond 電子元件以及發光二極辦列晶片形成電性連接， ίΐ藉Ϊ焊墊與—高壓紐電源供絲連接，以㈣交流電源至 發光70件。 β本發明之再一目的係提供一發光元件，其中上述之電子元件可 以單元、電阻單元、電容單元或電感單元等被動元件，用 以知·南發光元件之效率。 本發明揭示一種發光元件，於此發光元件中具有至少一顆發光 二極體陣列晶片，且上述發光二極體陣列晶片包含串聯或並聯 接之複數發光二極體單元。 本發明揭示一種發光元件，於此發光元件中具有至少一顆發光 二?體陣顺片’且上述發光二極體陣列晶片包含複數發光二極 體單元，並且排列成一串接之封閉迴路。 本發明說明一種發光元件，於此發光元件中具有至少一顆發光 二極體陣列晶片，且上述發光二極體陣列晶片包含複數發光二極 體單元’複數發光二極體單元排列成複數串接封閉迴路，其中任 二相鄰之封閉迴路具有相異之串接方向，且此相鄰之封閉迴路且 有一共用部分。 〃 4 201029145 小明另一方面在揭示一種發光元件，至少包含一次載體；至 件’位於所述之次㈣上、至少—顆藍光發光二極體 陣列曰曰片’位於所述之次載體上、至少—顆紅光二極體晶片，位 於所述之次載體上、以及—導電線路，位於所述之次載體上，並 ^別使所述之電子元件、所述之魏二極體陣列晶片、以及所 述之紅光一極體晶片形成電性連接。 【實施方式】 ^气明揭示-種發光元件。A η吏本發明之敘述更加詳盡與完 備，睛參照下列描述並配合第2Α圖至第8圖之圖示。 第2Α圖為本發明實施例之上視結構示意圖，第2Β圖為本發 明實施例之侧視結構示意圖，如第2Α圖與第2Β圖所示，發光元 件200子少包含一次載體(subm〇unt)2〇、至少一位於次載體％上 之電子7G件22、複數顆位於次載體20上發光二極體陣列晶片 (light_emitting array chip)24、至少一位於次載體2〇上之焊墊26， 以及位於^v載體20上之導電線路(c〇nductive加⑶）28以串聯或 並聯之方式電性連接上述之電子元件22、發光二極體陣列晶片24 與焊墊26,其中，任二相鄰發光二極體陣列晶片24之間具有一間 距D，且間距D大於1〇μιη ;較佳為大於1〇〇阿；而上述焊墊 _ 26與一父流電電源供應器(圖未示)形成電性連接，其中此交流電 電源供應器提供一般家用100V至240V之高壓交流電至上述發光 元件200。 上述之電子元件22可以是至少一種單元選自電阻、電容、電 感等被動元件(passive element)所構成之群組。 第2C圖為本發明另一實施例結構示意圖，如第2C圖所示，本 發明之發光元件200亦包含一位於次載體2〇上之反射層21，用以 反射發光二極體陣列晶片24所發出之光線，而次載體20上更具 有一碗杯狀凹陷結構29以容納上述之電子元件22或發光二極體 陣列晶片24 ;此外’上述之發光元件2⑻更包含一位於發光二極 體陣列晶片24上之波長轉換層23以及一位於次載體20上且至少 5 201029145 覆蓋上述銳二__晶片24之封裝膠材25。 述，發光施=視結構示意圖，如第3圖所 至少一位於4恭賭與發光二極體陣列晶片32串聯之電阻从、 之電容36、、1少一位上體陣列晶片32與電阻34串聯 體30上之暮雷錄人载體〇上之焊墊38，以及一位於次載 ❹ ❹ 電阻36與焊墊38形成電性連接；其中，整 Γ测少—具有低導通電壓及高逆向偏壓之二極體單 ί流迴路’藉由匕整流元件31將交流電源供應 Γ 弦波交流電(Ac)轉換為脈衝式直流電(pulsed DC)後 ;先=件其中，具有低導通電壓高逆向偏壓之二極 ί ^疋基納二極體(Zener DiGde)或蕭特基二極體(Sch〇ttky f麵自包含ΠΙ_ν族化合物或IV就素，例如氮 化鎵(GaN)系列材料、礙化紹鎵銦(A1GaInp)系列材料、或發。其中， 任二相鄰發光二極體陣列晶片32之間具有—大於⑺哗之間距， 較佳為大於ΙΟΟμχη之間距；此外，上述焊墊38與一交流電電源供 ，器β(圖未示)形成電性連接’其中上述之交流電電源供應器（圖未 示)提供為一般家用100ν至24〇ν之高壓交流電之電源至上述發光 元件300。 第4圖為上述實施例中發光二極體陣列晶片之侧視結構示意 圖’如第4圖所示’發光二極體陣列晶片400包含一基板40、複 數位於基板40上之發光二極體早元(ligjjt-emitting diode unit) 42、 至少=位於基板40上之電極44,以及以同向串聯或並聯方式使複 數發光二極體單元42與電極44形成電性連接之電性連接結構 46 ;其中，上述連接結構46可以是金屬線(wire)4金屬層，而上 述之電極44係用以與本發明發光元件次載體上之導電線路形成電 性連接(圖未示）；不僅如此，此發光二極體陣列晶片4〇〇可藉由控 制發光二極體單元42之數量與連接方式使發光二極體陣列晶片 6 201029145 400本身具有特定工作電壓。藉由上述發光二極體陣列晶片可 設計電壓之特性，再配合複數顆發光二極體陣列晶片4〇〇串 設計，使本發明發光元件可符合一般家用loov至24〇v之電壓$ 參考第2圖至第4圖，以應用於一般照明系統之11〇伏特 流電力系統之應用為例，前述之複數顆發光二極體陣列晶 ^ ❿ 一 2x2排列之矩陣(如第3圖所示），其中至少一顆發光二極體 晶片32包含氮化銦鎵(inGaN)之發光層以發出峰波長 wavelength)範圍介於440-480奈米之藍光(定義為藍光二極體 晶片），以及至少一顆發光二極體陣列晶片32包含磷化鋁銦 (AlGalnP)之發光層以發出峰波長咖故界狀也租也)範圍介 600〜650奈米之紅光(定義為紅光二極體陣列晶片）。於藍光二 陣列晶片上塗佈可吸收發出之藍光波長並轉換為峰波長範圍介於 570〜595奈米之黃光之波長轉換層（定義為黃光螢光粉），例如^ 商用之YAG或TAG螢光粉(如第2C圖所示），以混合發出白光二 為達到不同色溫(color temperature)之要求，可調整所述之藍光及/ 或紅光二極體陣列晶片之顆數、所述之藍光及/或紅光二極體陣列 晶片之晶片面積、或所述之藍光及/或紅光二極體陣列晶片之二極 體單元數量，或覆蓋以可轉換發出其他顏色之螢光粉，例如&光 螢光粉，以逹到調整色溫之要求◊各實施例詳列如下表所示，'並 舉下表之第2實施例詳述如后： 、 實施例 編號 交流電力 系統 藍光二極體陣 列晶片顆數 藍光二極體單 元數量 紅光二極體陣 列晶片數量 紅光單 元數量 1 AC 110V 2 12 2 6 _2 AC 110V 3 8 1 12 3 AC 220V 2 24 2 12 4 AC 220V 3 16 1 24 上表之第2實施例為依本發明之發出暖白光(warm white)之發 7 201029145 光元件，其中，所有藍光二極體陣列晶 二極體陣列晶片之發光功率比約為3 :與所有紅光 2紅光二極體陣列晶片之顆數例如各為3二及含藍 量為8個單元，紅光二極元)數 義為紅光二鋪單元)數量為12解元，^她 J二^單元躺有紅光二極體單元之_為 且’各藍光及紅光二極體單元之順向偏壓值 ^这並 ，’因此，所述之各藍光及紅光：極斜3—伙=2 之陣咨列晶片，且其所串聯而形成之一㈣2x2矩 =伙特之負載。於驅動時，上述之發光元件發出之藍光 =比約為3 :卜將此矩陣㈣至—預定電阻及前述之橋^ ϊ ϊΐί整流元件，可形成—用於膽交流電綠 本明之實關巾，所有藍光二極體_晶片與所有紅光 一極體陣列晶片之發光功率之比值約介於2至4，較佳 ❹ 2·6〜3.4 ;或者所述之發光元件之所有藍光與紅光二極體單元ς ^比值約介於4/3與8/3之間，以控制色溫範圍介於2〇〇〇〜5〇〇()κ 形成偏暖色系白光；較佳為色溫範圍介於2000〜3500Κ之暖白光。 於本發明之另一實施例，所述之紅光二極體陣列晶片亦可被複數 個串聯之非陣列式紅光二極體晶片所取代，所述之複數個非陣列 式紅光二極體晶片串聯之晶片數量相同於被取代之紅光二極體陣 列晶片所具有之紅光二極體單元之數量；其中，各所述之非陣列 式紅光二極體晶片僅具有一所述之紅光二極體單元，其順向偏壓 值約為2伏特。 第5Α圖至第5D圖為另一發光二極體陣列晶片之製造流程示 意圖；如第5Α圖所示，提供一基板50，並且以有機金屬化學氣 相沉積法於基板50上形成一磊晶疊層52，其中上述之磊晶疊層 52由下而上至少包含一第一導電型半導體層520、一活性層522， 以及一第二導電型半導體層524，並且此磊晶疊層52之材質係選 自包含銘(Α1)、鎵(Ga)、銦(In)、氮(Ν)、磷(Ρ)或砷(As)之半導體物 8 201029145 f ’ 鎵(GaN)系列材料或碌化鋁鎵銦(A1GaInP)系列材料。 隨後、’ ^第5B圖所示，利用微影蝕刻技術蝕刻上述之磊晶疊 】52，以定義出複數溝槽53，藉此於基板5〇上形成複數二極體 單το 54，其中上述二極體單元弘包含發光二極體單元54〇/54〇, 與整流一極體單it 542。此外，二極體單元54除了可以羞晶成長 方式直接成長於基板5〇，亦可以二次基板轉移(d〇uble _她 transfer)接合之方式，於移除原成長基板5〇之後，藉由一黏著層 或直接加壓/加熱之方式將二極體單元54接合至另一基板，以取代 原，長基板50’例如為熱傳導係數或透光度較原成長基板5〇為佳 ^高導熱基板或透光基板，以提高發光二極體陣列晶片之散熱或 W光取出效率’並於接合之後移除原成長基板50。以上述之紅光二 極，，列晶片或非陣列式紅光二極體晶片為例，其中之紅光二極 體單兀較佳為以接合方式藉由一金屬、氧化物、或有機高分子 材質之黏著層接合至另一高導熱基板或透光基板上。 。接著如第5C圖所示’再次利用微影侧技術侧上述之二極 體單元54 ’使二極體單元54裸露部分之第一導電型半導體層52〇。 最後，如第5D圖所示，於基板上形成電極56，用以與先前所 述之次載體上的導電線路(圖未示)形成電性連接；並且形成複數電 性連接結構58電性連接相異二極體單元54與電極56 ;於本實施 Φ 例中，電性連接結構58包含一絕緣層580覆蓋於二極體單元54 之侧壁以及一金屬層582位於絕緣層580上。 此外，於上述發光二極體單元54〇中，任一發光二極體單元54〇 係以第-導電型半導體層52〇藉由電性連接結構％與相鄰發光二 極體單元540,之第二導電型半導體層524形成電性連接，並且^ 列成一串接之封閉迴路，藉由上述之步驟成一發光二極 片500。 肪·干yj日a 第6圖為第圖中發光二極體陣列晶片5⑻之上視結構示竟 圖，如第6圖所示，發光二極體陣列晶片5〇〇包含一基板％'、以 數位於基板50上之二極體單元54、位於基板5〇上之 56a/56b ’以及以串聯或並聯方式使連接相異二極體單元％與電極 9 201029145 56a/56b之電性連接結構58。== 二体=In addition to the above-mentioned at least one light-emitting diode, another object is to provide at least one solder pad on the secondary carrier (bond electronic component and light-emitting diode chip to form an electrical connection, ΐ ΐ The solder pad is connected to the high voltage neon power supply wire, and (4) the alternating current power source to the light emitting device. 7. Another object of the present invention is to provide a light emitting element, wherein the electronic component can be a unit, a resistor unit, a capacitor unit or an inductor unit. Passive element for knowing the efficiency of the south illuminating element. The invention discloses a illuminating element, wherein the illuminating element has at least one illuminating diode array wafer, and the illuminating diode array chip comprises a series or a parallel connection A plurality of light emitting diode units, wherein the light emitting element has at least one light emitting diode array and the light emitting diode array wafer comprises a plurality of light emitting diode units and arranged in a Closed loop in series. The present invention describes a light emitting element having at least one light emitting diode array wafer in the light emitting element, and The light emitting diode array wafer comprises a plurality of light emitting diode units, wherein the plurality of light emitting diode units are arranged in a plurality of series closed loops, wherein any two adjacent closed loops have different tandem directions, and the adjacent ones Closed loop and having a common portion. 〃 4 201029145 Xiao Ming, on the other hand, discloses a light-emitting element comprising at least one carrier; to a piece 'located on the second (four), at least one blue light-emitting diode array 曰曰 'located at The second carrier, at least one red photodiode wafer, is located on the secondary carrier, and the conductive line is located on the secondary carrier, and the electronic component is described. The Wei diode array wafer and the red photo-electrode wafer are electrically connected. [Embodiment] The invention discloses a light-emitting element. A η吏 The description of the invention is more detailed and complete, and the eye reference is made. The following description is in conjunction with the drawings of Figures 2 through 8. Figure 2 is a schematic top view of the embodiment of the present invention, and Figure 2 is a side view of the embodiment of the present invention, as shown in Figure 2 As shown in FIG. 2, the light-emitting element 200 includes a primary carrier (subm〇unt) 2〇, at least one electron 7G device 22 on the secondary carrier%, and a plurality of light-emitting diode array wafers on the secondary carrier 20 (light_emitting). An array chip 24, at least one pad 26 on the secondary carrier 2, and a conductive line (c) on the carrier 20 are electrically connected to the electronic component 22 in series or in parallel. The light-emitting diode array wafer 24 and the bonding pad 26, wherein any two adjacent light-emitting diode array wafers 24 have a spacing D between them, and the spacing D is greater than 1 μm; preferably greater than 1 〇〇; The pad _ 26 is electrically connected to a parent galvanic power supply (not shown), wherein the AC power supply provides high-voltage alternating current of 100V to 240V in the household to the illuminating element 200. The electronic component 22 described above may be a group of at least one selected from the group consisting of passive elements such as resistors, capacitors, and inductors. FIG. 2C is a schematic structural view of another embodiment of the present invention. As shown in FIG. 2C, the light-emitting element 200 of the present invention also includes a reflective layer 21 on the secondary carrier 2 , for reflecting the LED array 24. The light emitted by the sub-carrier 20 further has a cup-shaped recessed structure 29 for accommodating the above-mentioned electronic component 22 or the LED array wafer 24; furthermore, the above-mentioned illuminating component 2 (8) further comprises a light-emitting diode The wavelength conversion layer 23 on the array wafer 24 and a package adhesive 25 on the secondary carrier 20 and at least 5 201029145 cover the above-mentioned sharp __wafer 24. The light-emitting device is a schematic view of the structure. As shown in FIG. 3, at least one resistor is connected in series with the light-emitting diode array chip 32. The capacitor 36, 1 has one upper body array chip 32 and the resistor 34. The pad 38 on the tantalum body 30 is electrically connected to the pad 38, and the resistor 36 is electrically connected to the pad 38; wherein the entire tap is low--with low turn-on voltage and high reverse The biased diode single-loop circuit 'converts the alternating current power supply chord wave alternating current (Ac) to pulsed direct current (pulsed DC) by the rectifying element 31; firstly, the low on-voltage high reverse Bipolar ί ^ 疋 纳 二 二 萧 萧 萧 萧 萧 萧 萧 萧 萧 萧 萧 萧 萧 萧 萧 萧 萧 萧 萧 萧 萧 萧 萧 萧 萧 萧 萧 萧 萧 萧 萧 萧 萧 萧 萧 萧 萧 萧 萧 萧 萧 萧 偏压 偏压 偏压 偏压 偏压 偏压Incorporating the gallium indium (A1GaInp) series of materials or hair, wherein any two adjacent light emitting diode array chips 32 have a distance greater than (7) ,, preferably greater than a distance between ΙΟΟμχη; 38 and an AC power supply, the device β (not shown) forms an electrical connection The AC power supply (not shown) is provided as a power source of a high-voltage alternating current of 100 ν to 24 〇 ν to the above-mentioned illuminating element 300. Fig. 4 is a side view showing the structure of the illuminating diode array wafer in the above embodiment. As shown in FIG. 4, the LED array 400 includes a substrate 40, a plurality of ligjjt-emitting diode units 42 on the substrate 40, and at least an electrode 44 on the substrate 40. And the electrical connection structure 46 for electrically connecting the plurality of LED units 42 and the electrodes 44 in a co-directional series or parallel manner; wherein the connection structure 46 may be a metal layer of a wire 4, and the above The electrode 44 is electrically connected to the conductive line on the sub-carrier of the light-emitting element of the present invention (not shown); otherwise, the LED array 4 can be controlled by the LED unit 42. The number and connection manner enable the LED array chip 6 201029145 400 to have a specific operating voltage. The characteristics of the voltage can be designed by the above-mentioned LED array chip, and then combined with a plurality of illuminations. The polar array chip 4 is designed to make the light-emitting element of the present invention conform to the voltage of the general household loov to 24 〇V. Referring to Figures 2 to 4, it is applied to the 11 volt current power system of the general lighting system. For example, the foregoing plurality of LED arrays are arranged in a matrix of 2x2 arrays (as shown in FIG. 3), wherein at least one of the LED chips 32 comprises indium gallium nitride (InGaN) light. The layer emits blue light having a peak wavelength (wavelength) ranging from 440 to 480 nm (defined as a blue LED wafer), and at least one of the light emitting diode array wafer 32 includes an illuminating layer of aluminum indium phosphide (AlGalnP). The peak wavelength is also used to rent the color. The range is between 600 and 650 nm (defined as a red LED array wafer). Applying a wavelength conversion layer (defined as yellow fluorescent powder) that absorbs the emitted blue light wavelength and converts it into a yellow wavelength with a peak wavelength ranging from 570 to 595 nm, such as a commercially available YAG or TAG phosphor powder. (As shown in FIG. 2C), the number of the blue and/or red diode array wafers, the blue light and the blue light and/or the red light diode array wafer can be adjusted in order to achieve different color temperature requirements. / or the chip area of the red LED array wafer, or the number of diode units of the blue and / or red diode array wafer, or the phosphor powder that can be converted to emit other colors, such as & The light phosphor powder is required to adjust the color temperature. The examples are detailed in the following table, 'the second embodiment of the following table is detailed as follows: · Example number AC power system blue diode array Number of Chips Number of Blue LED Units Number of Red Light Diode Arrays Number of Red Light Units 1 AC 110V 2 12 2 6 _2 AC 110V 3 8 1 12 3 AC 220V 2 24 2 12 4 AC 220V 3 16 1 24 The second embodiment of the table is based on the present The light component of the warm white light (20103145), wherein all of the blue light diode array crystal diode array wafers have an emission power ratio of about 3: with all red light 2 red light diode array wafers For example, each number is 3 2 and the blue content is 8 units, the red light dipole element is the number of red light two paving units) the number is 12 solutions, ^ she J 2 unit lying with red light diode The unit's _ and 'the forward bias value of each of the blue and red diode units ^ and this, therefore, the respective blue and red light: extremely oblique 3 - gang = 2 array of advisory wafers, And they are connected in series to form one (four) 2x2 moment = the load of the gang. When driving, the blue light emitted by the above-mentioned light-emitting element has a ratio of about 3: the matrix (4) to the predetermined resistance and the aforementioned bridge device can be formed into a solid-cut towel for the bile AC green. The ratio of the luminous power of all the blue LEDs to the red light and one of the red light array wafers is about 2 to 4, preferably ❹ 2·6 to 3.4; or all of the blue and red light of the light-emitting elements The polar body unit ς ^ ratio is between about 4/3 and 8/3, to control the color temperature range between 2〇〇〇~5〇〇() κ to form warmer white light; preferably the color temperature range is 2000 ~3500 Κ warm white light. In another embodiment of the present invention, the red LED array wafer may be replaced by a plurality of non-array red photodiodes in series, and the plurality of non-array red dipoles The number of wafers in series with the body wafer is the same as the number of red diode units of the replaced red photodiode array wafer; wherein each of the non-array red photodiodes has only one The red diode unit has a forward bias value of about 2 volts. 5D to 5D are schematic views showing a manufacturing process of another LED array wafer; as shown in FIG. 5, a substrate 50 is provided, and an epitaxial crystal is formed on the substrate 50 by organometallic chemical vapor deposition. The laminate 52, wherein the epitaxial layer 52 comprises at least a first conductive semiconductor layer 520, an active layer 522, and a second conductive semiconductor layer 524 from bottom to top, and the epitaxial layer 52 The material is selected from semiconductor materials including Ming (Α1), gallium (Ga), indium (In), nitrogen (Ν), phosphorus (Ρ) or arsenic (As). 201023145 f 'Gallium (GaN) series materials or Aluminum gallium indium (A1GaInP) series materials. Subsequently, as shown in FIG. 5B, the above-described epitaxial stack 52 is etched by a photolithography etching technique to define a plurality of trenches 53, thereby forming a plurality of diodes τ0 on the substrate 5? The above-described diode unit includes a light-emitting diode unit 54〇/54〇, and a rectifying one-pole unit one 542. In addition, the diode unit 54 can be directly grown on the substrate 5 羞 in a dim crystal growth manner, or can be transferred by a secondary substrate transfer (d〇uble _ her transfer) after removing the original growth substrate 5 An adhesive layer or direct pressurization/heating method joins the diode unit 54 to another substrate instead of the original, and the long substrate 50' has a heat conductivity or transmittance, for example, better than the original growth substrate 5 The substrate or the light-transmissive substrate is used to improve heat dissipation or W-light extraction efficiency of the light-emitting diode array wafer and to remove the original growth substrate 50 after bonding. Taking the above-mentioned red light dipole, the column wafer or the non-array red photodiode wafer as an example, wherein the red photodiode unit is preferably joined by a metal, an oxide, or an organic high. The adhesive layer of molecular material is bonded to another highly thermally conductive substrate or light transmissive substrate. . Next, as shown in Fig. 5C, the first conductive type semiconductor layer 52 of the exposed portion of the diode unit 54 is again used by the above-described diode unit 54' on the side of the lithography side. Finally, as shown in FIG. 5D, an electrode 56 is formed on the substrate for electrically connecting with a conductive line (not shown) on the secondary carrier previously described; and a plurality of electrical connection structures 58 are electrically connected. The dissimilar diode unit 54 and the electrode 56. In the embodiment Φ, the electrical connection structure 58 includes an insulating layer 580 covering the sidewall of the diode unit 54 and a metal layer 582 on the insulating layer 580. In addition, in the above-mentioned light-emitting diode unit 54, any of the light-emitting diode units 54 is made of the first conductive type semiconductor layer 52, and the adjacent light-emitting diode unit 540 is electrically connected. The second conductive semiconductor layer 524 is electrically connected, and is arranged in a series of closed loops, and the light emitting diode sheet 500 is formed by the above steps. Figure 6 is a schematic view of the upper surface of the light-emitting diode array wafer 5 (8) in the figure. As shown in Fig. 6, the light-emitting diode array wafer 5 includes a substrate %', A plurality of diode units 54 on the substrate 50, 56a/56b' on the substrate 5, and an electrical connection structure connecting the dissimilar diode unit % and the electrodes 9 201029145 56a/56b in series or in parallel 58.

上述之複數二極體單元54，包含複數個發光二極體單元54〇 以及複數個整流發光二極體單元542a/542b/542c/542d，其中電極 56a藉由電性連接結構58分別與整流發光二極體單元54&之第一 導電型半導體層（圖未示)以及542b之第二導電型半導體層(圖未示 形成電性連接；而電極56b藉由電性連接結構58分別與整流 二極體單元542c之第一導電型半導體層（圖未示)以及542d之^二 導電型半導體層（圖未示)形成電性連接；此外，發光二極體單元 540排列形成串接之封閉迴路’整流發光二極體元 542a/542b/542c/542d則分別連接於上述封閉迴路中相 w/x/y/z ’以形成—橋式迴路。 兴職 第7A圖與第7B圖為上述發光二極體陣列晶片之電路示竟 圖其中箭號方向係發光一極體陣列晶片電流通入時之電流路徑 方向，如第7A圖所示，當電流由電極56a流入發光二極體陣列£ 片500時，電流會流經整流二極體單元542a、封閉迴路中部分之 發光二極體單元54〇(如箭號所示之路徑）、整流二極體單元542c， 並且由電極56b離開發光二極體陣列晶片5〇〇 ;相對於此如 =圖所示，當電流由56b流入發光二極體陣列晶片5〇〇時 會流經整流二極體542d、封閉迴路中部分之發光二極 箭號所示之路徑）、經整流二極體542b，並且由電極5 開發光二極體陣列晶片5〇〇。 第8圖為本發明實施例中發光二極體陣 】騎示，發光二極體陣列⑼㈣中複數發 卓疋82排列成複數串接封閉迴路μ及一共用迴路c， 串接方向相異，於本實施例中’封閉迴路Α係： Ϊ串封閉迴路Β係以逆時針方向串接，且上述相鄰 Ϊ封^ 與封閉迴路Β之間至少具有—共用迴路C;不僅Ϊ 此，發光二極體陣列晶片800更包含複數整流二極體單元料，八 SSf"中相異之四個端點相連接形成-橋式迴路二 201029145The plurality of diode units 54 include a plurality of light emitting diode units 54A and a plurality of rectifying light emitting diode units 542a/542b/542c/542d, wherein the electrodes 56a are respectively rectified by the electrical connection structure 58. a first conductivity type semiconductor layer (not shown) of the light emitting diode unit 54 & and a second conductivity type semiconductor layer of 542b (not shown to be electrically connected; and the electrode 56b is electrically rectified by the electrical connection structure 58 respectively) The first conductive semiconductor layer (not shown) of the diode unit 542c and the second conductive semiconductor layer (not shown) of the 542d are electrically connected; in addition, the LED unit 540 is arranged to form a closed connection. The circuit 'rectifying LEDs 542a/542b/542c/542d are respectively connected to the phase w/x/y/z' in the closed loop to form a bridge circuit. The 7A and 7B diagrams of the above are the above The circuit diagram of the LED array chip is shown in the figure where the direction of the arrow is the direction of the current path when the current of the one-pole array wafer is turned on, as shown in Fig. 7A, when the current flows from the electrode 56a into the array of the light-emitting diodes. At 500, the current will flow through the rectification a diode unit 542a, a portion of the closed loop portion of the light-emitting diode unit 54 (such as the path shown by the arrow), the rectifier diode unit 542c, and the electrode 56b leaves the light-emitting diode array wafer 5; As shown in the figure below, when the current flows from the 56b into the light-emitting diode array chip 5, it flows through the rectifying diode 542d, and the path shown by the light-emitting diode of the closed loop). The diode 542b is rectified, and the photodiode array wafer 5 is developed by the electrode 5. FIG. 8 is a schematic diagram of a light-emitting diode array according to an embodiment of the present invention. The plurality of arrays of the LED arrays (9) and (4) are arranged in a plurality of series closed loops μ and a common circuit c, and the serial directions are different. In the present embodiment, the 'closed loop system: the closed loop circuit is connected in a counterclockwise direction, and the adjacent tantalum seal and the closed loop have at least a common loop C; not only this, the light emitting two The polar body array wafer 800 further comprises a plurality of rectifying diode unit materials, and eight different ends of the eight SSf" are connected to form a bridge circuit two 201029145

Eli靜ΞΞΞί: 断作之轉變化飾，健涵蓋在本發明之翻顧内之精 【圖式簡單說明】 圖第1圖為習知可用於交流電源之發光二極體照明元件結構示意 第2Α圖為本發明實施例之上視結構示意圖。 ，2Β圖為本發明實施例之侧視結構示意圖。 第2C圖為本發明另一實施例之侧視結構示意圖。 第3圖為本發明又一實施例之上視結構示意圖。 第4圖為本發明發光二極體陣列晶片之側視結構示意圖。 第5Α圖至第5D圖為本發明實施例中發光二極體^列晶 製造流程示意圖。 曰 第6圖為本發明實施例中發光二極體陣列晶片之上視結構示奄 圖。 〜 第7A與7B圖為本發明實施例中發光二極體陣列晶片之電 示意圖。 參 第8圖為本發明實施例中發光二極體陣列晶片之另一電路示竟 圖。 10 次載體 14 焊墊 122發光二極體單元 20 次載體 22 電子元件 【主要元件符號說明】 100照明元件 12 發光二極體陣列晶片 120基板 200發光元件 21 反射層 11 201029145Eli静ΞΞΞί: The change of the broken work, the health covered in the review of the present invention [simplified description of the figure] Figure 1 is a schematic diagram of the structure of the light-emitting diode lighting element that can be used for AC power supply. The figure is a schematic diagram of the top view of the embodiment of the present invention. 2 is a schematic side view of the embodiment of the present invention. 2C is a schematic side view showing another embodiment of the present invention. FIG. 3 is a schematic top view of another embodiment of the present invention. 4 is a schematic side view showing the structure of the light emitting diode array wafer of the present invention. 5A to 5D are schematic views showing a manufacturing process of a light-emitting diode according to an embodiment of the present invention. Fig. 6 is a view showing the top view of the light emitting diode array wafer in the embodiment of the present invention. ~ Figures 7A and 7B are electrical diagrams of a light emitting diode array wafer in accordance with an embodiment of the present invention. FIG. 8 is another circuit diagram of the LED array wafer in the embodiment of the present invention. 10 times carrier 14 solder pad 122 light-emitting diode unit 20-time carrier 22 electronic component [main component symbol description] 100 lighting component 12 light-emitting diode array wafer 120 substrate 200 light-emitting element 21 reflective layer 11 201029145

23 波長轉換層 24 發光二極體陣列晶片 25 封裝膠材 26 焊墊 28 導電線路 300 發光元件 30 次載體 31 整流元件 32 發光二極體陣列晶片 34 電阻 36 電容 38 焊墊 39 導電線路 400 發光二極體陣列晶片 40 基板 42 發光二極體單元 44 電極 46 電性連接結構 500 發光二極體陣列晶片 50 基板 52 遙晶疊層 520 第一導電型半導體層 522 活性層 524 第二導電型半導體層 54 二極體單元 540 發光二極體單元 540’發光二極體單元 542 整流二極體單元 56 電極 58 電性連接結構 580 絕緣層 582 金屬層 542a整流二極體單元 542b整流二極體單元 542c整流二極體單元 542d整流二極體單元 56a 電極 56b 電極 1223 Wavelength conversion layer 24 Light-emitting diode array wafer 25 Package adhesive 26 Solder pad 28 Conductive line 300 Light-emitting element 30 Sub-carrier 31 Rectifier element 32 Light-emitting diode array wafer 34 Resistor 36 Capacitor 38 Solder pad 39 Conductive line 400 Light-emitting two Polar body array wafer 40 substrate 42 light emitting diode unit 44 electrode 46 electrical connection structure 500 light emitting diode array wafer 50 substrate 52 remote crystal layer stack 520 first conductive type semiconductor layer 522 active layer 524 second conductive type semiconductor layer 54 Diode unit 540 Light-emitting diode unit 540' Light-emitting diode unit 542 Rectifier diode unit 56 Electrode 58 Electrical connection structure 580 Insulation layer 582 Metal layer 542a Rectification diode unit 542b Rectification diode unit 542c Rectifier diode unit 542d rectifying diode unit 56a electrode 56b electrode 12

Claims (1)

201029145 七、申請專利範圍： 1. 一種可用於高壓交流電之發光元件，至少包含： 一次載體(submount); 至少一電子元件，位於該次載體上； 至少一顆藍光發光二極體陣列晶片，位於該次載體上，其 中，該藍光二極體陣列晶片包含一第一基板及複數個藍光二 極體單元共同形成於該第一基板上； 至少一顆紅光二極體晶片，位於該次載體上，其中，該紅光201029145 VII. Patent application scope: 1. A light-emitting component that can be used for high-voltage alternating current, comprising at least: a primary carrier (submount); at least one electronic component on the secondary carrier; at least one blue light-emitting diode array wafer, located at In the secondary carrier, the blue diode array wafer comprises a first substrate and a plurality of blue diode units jointly formed on the first substrate; at least one red diode chip located at the secondary carrier Above, where the red light 二極體晶片包含一第二基板及至少一個紅光二極體單元丑 同形成於該第二基板上；以及 八 一導電線路，位於該次載體上，並且分別使該電子元件、該 藍光二極體陣列晶片、以及該紅光二極體晶片形成電性連 接。 2. 如申請專利範圍第1項所述之發光元件，其中該電子元件可 以係整流元件、電阻元件、電容元件或電感元件。 3·如申請專利範圍第2項所述之發光元件，其中該整流元件係 由至少一具有低順向電壓與高逆向偏壓之單元所組成。 4.如申請^利範圍第3項所述之發光元件，其中該具有低順向 電壓與高逆向驗之單元可以健流二極體或蕭基特二極 體。 5· ί申請專利範圍帛1項所述之發光元件，該複數藍光二極體 早元係形成同向串聯及/或並聯連接。 6.7. 如申凊專利範圍第1項所述之發光元件，其中該複數藍光 極體單元排列成至少一串接之封閉迴路。 =申4專利範圍第6項所述之發光元件，該藍光二極體陣列 更包含複數整流二極體單元與該封閉迴路形成一橋式 8. ^請專利範圍S 7項所述之發光元件，該藍光二極體陣列 包含至少一電極’其中該電極分別與該二極體單元以 及該導電線路形成電性連接。 13 201029145 9. 如申請專利範圍第1項所述之發光元件，其中該複數發光二 極體單元串接排列成複數封閉迴路，其中任選二相鄰之封閉 迴路具有相異之串接方向，且該相鄰之封閉迴路具有一並用 部分。 、八 10. 如申請專利範圍第9項所述之發光元件，該藍光二極體陣列 晶片更包含複數整流二極體單元與該封閉迴路形成一橋 迴路。 11. 如曱凊專利範圍第10項所述之發光元件，該藍光二極體陣The diode chip includes a second substrate and at least one red light diode unit is formed on the second substrate; and an eight-first conductive line is disposed on the secondary carrier, and the electronic component and the blue light are respectively The polar body array wafer and the red photodiode wafer are electrically connected. 2. The illuminating element of claim 1, wherein the electronic component is a rectifying element, a resistive element, a capacitive element or an inductive element. 3. The illuminating element of claim 2, wherein the rectifying element is comprised of at least one unit having a low forward voltage and a high reverse bias. 4. The illuminating element of claim 3, wherein the unit having a low forward voltage and a high degree of reversal can be a galvanic diode or a Schottky diode. 5. The light-emitting element of claim 1, wherein the plurality of blue-light diodes are formed in the same direction in series and/or in parallel. 6.7. The illuminating element of claim 1, wherein the plurality of blue body units are arranged in at least one closed loop. The light-emitting element of claim 6, wherein the blue-diode array further comprises a plurality of rectifying diode units and the closed loop forming a bridge type. The blue LED array includes at least one electrode 'where the electrode is electrically connected to the diode unit and the conductive line, respectively. The light-emitting element of claim 1, wherein the plurality of light-emitting diode units are arranged in series in a plurality of closed loops, wherein the two adjacent closed loops have different tandem directions, And the adjacent closed loop has a combined portion. 8. The light-emitting element of claim 9, wherein the blue-diode array chip further comprises a plurality of rectifying diode units forming a bridge circuit with the closed loop. 11. The light-emitting element according to item 10 of the patent scope, the blue LED array 列晶片更包含至少一電極’其中該電極分別與該二極體單元 以及該導電線路形成電性連接。 12. 如申請專利範圍第丨項所述之發光元件，包含複數顆 極，陣列晶片•聯或並聯形成—特定之電位降，使所述之發 光元件符合一般家用100V至240V之電壓條件。 13. 如申請專利細第！項所述之發光元件，其中該次 結構，用以容納該電子元件與該複數顆發 圍第1項所述之發光元件，更包含—反射層位 15·ϋΪ專利範圍第1項所述之發光树，更包含-波長轉換 層位於該複數顆發光二極體陣列晶片上。 16.;申請專利範圍第1項所述之發光元件，更包含一封贺朦 :晶，體上’並且至少覆蓋該複數以二= 18 ^ 19=：；:體晶片僅具有-紅光二極體』 光發^二1項所述之發光元件，其找至少一顆紅 一 曰曰片包括至少一紅光二極體陣列晶片並具有 201029145 複亡個紅光二極體單元共同形成於該第二基板上。 ΐ專,範圍第19項所述之發光元件’其中所有該藍光 &、工一極體陣列晶片所各具有之發光二極體單元數量比 值約介於4/3與8/3之間。 21.tt請專利細第1項所述之發光元件，其巾所有藍光二極 體陣列“與紅光二鋪“之發光功率比働介於2〜4。 2.如申請專利細第21項所述之發光元件，其中所有藍光二 極體陣列晶片與紅光二極體晶月之發光功率比值約介於 2·6〜3·4 〇The column wafer further includes at least one electrode 'where the electrode is electrically connected to the diode unit and the conductive line, respectively. 12. The illuminating element according to the scope of claim 2, comprising a plurality of poles, the array wafers being connected in parallel or in parallel to form a specific potential drop, such that the illuminating elements are in compliance with a normal household voltage of 100V to 240V. 13. If you apply for a patent! The illuminating element of the item, wherein the sub-structure is configured to receive the electronic component and the plurality of illuminating elements according to item 1, further comprising a reflective layer 15 The illuminating tree further includes a wavelength conversion layer on the plurality of illuminating diode array wafers. 16. The light-emitting element according to claim 1 of the patent application, further comprising a greeting: crystal, on-body and at least covering the plurality of two = 18 ^ 19 =:;: the body wafer only has - red light two The illuminating element of the illuminating device, wherein the at least one red enamel film comprises at least one red photodiode array wafer and has a 201029145 dying red light dipole unit formed together On the second substrate. The illuminating element of the ninth aspect, wherein all of the blue light-emitting diode arrays have a light-emitting diode unit ratio of about 4/3 and 8/3. 21. tt. The light-emitting element according to the above-mentioned patent item 1, wherein the ratio of the luminous power of all the blue light diode arrays to the red light two-layer array is between 2 and 4. 2. The light-emitting element according to claim 21, wherein the ratio of the luminous power of all the blue light-emitting diode array wafers to the red light-emitting diodes is about 2·6 to 3·4 〇 23·如申請專利範圍第15項所述之發光元件係發出色溫範圍介 於2000〜3500Κ之暖白光。 24.^申請專利範圍第丨項所述之發光元件，其中該紅光二極體 單元係藉由一金屬、氧化物、或有機高分子材質接合至該第 二基板上。23. The light-emitting element according to item 15 of the patent application is a warm white light having a color temperature ranging from 2000 to 3500 Å. 24. The light-emitting device of claim 2, wherein the red diode unit is bonded to the second substrate by a metal, oxide, or organic polymer material. 1515
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CN102842573A (en) * 2012-09-05 2012-12-26 宁波市鄞州皓升半导体照明有限公司 Alternating current light emitting diode structure
TWI422784B (en) * 2011-08-12 2014-01-11 Ind Tech Res Inst Illumination apparatus
TWI451555B (en) * 2010-10-25 2014-09-01 Epistar Corp A rectifying unit, a light emitting diode device and the combination thereof
TWI453947B (en) * 2011-08-05 2014-09-21 Univ Chang Gung Manufacturing method of electro - optical diode for electroforming
TWI468623B (en) * 2010-11-11 2015-01-11 Bridgelux Inc Driver-free light-emitting device
TWI610465B (en) * 2013-10-07 2018-01-01 晶元光電股份有限公司 Light-emitting diode assembly and manufacturing method thereof
TWI613840B (en) * 2012-06-19 2018-02-01 晶元光電股份有限公司 Light-emitting device

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TWI451555B (en) * 2010-10-25 2014-09-01 Epistar Corp A rectifying unit, a light emitting diode device and the combination thereof
US9484493B2 (en) 2010-10-25 2016-11-01 Epistar Corporation Rectifying unit, a light emitting diode device, and the combination thereof
TWI468623B (en) * 2010-11-11 2015-01-11 Bridgelux Inc Driver-free light-emitting device
US9091399B2 (en) 2010-11-11 2015-07-28 Bridgelux, Inc. Driver-free light-emitting device
US10047914B2 (en) 2010-11-11 2018-08-14 Xenio Systems, Inc. Driver-free light-emitting device
TWI453947B (en) * 2011-08-05 2014-09-21 Univ Chang Gung Manufacturing method of electro - optical diode for electroforming
TWI422784B (en) * 2011-08-12 2014-01-11 Ind Tech Res Inst Illumination apparatus
TWI613840B (en) * 2012-06-19 2018-02-01 晶元光電股份有限公司 Light-emitting device
CN102842573A (en) * 2012-09-05 2012-12-26 宁波市鄞州皓升半导体照明有限公司 Alternating current light emitting diode structure
TWI610465B (en) * 2013-10-07 2018-01-01 晶元光電股份有限公司 Light-emitting diode assembly and manufacturing method thereof

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