TW201029123A - A heat dissipative assembly and a light emitting diode package including a heat dissipative block - Google Patents

A heat dissipative assembly and a light emitting diode package including a heat dissipative block Download PDF

Info

Publication number
TW201029123A
TW201029123A TW98102043A TW98102043A TW201029123A TW 201029123 A TW201029123 A TW 201029123A TW 98102043 A TW98102043 A TW 98102043A TW 98102043 A TW98102043 A TW 98102043A TW 201029123 A TW201029123 A TW 201029123A
Authority
TW
Taiwan
Prior art keywords
heat
block
emitting diode
light
dissipating block
Prior art date
Application number
TW98102043A
Other languages
Chinese (zh)
Inventor
Chih-Hung Wei
Chih-Yang Hsu
Ming-Chang Wu
Ming-Yu Hsu
Ming-Te Ku
Chih-Lung Wu
Original Assignee
High Power Lighting Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by High Power Lighting Corp filed Critical High Power Lighting Corp
Priority to TW98102043A priority Critical patent/TW201029123A/en
Publication of TW201029123A publication Critical patent/TW201029123A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

This invention provides a light emitting diode package including a heat dissipative block. The light emitting diode package includes a heat dissipative block, a chip, two insulating layers, two conductive layers and two wires. Two open grooves are formed on the heat dissipative block. The chip is fixed on the heat dissipative block. The insulating layers are coated on walls of the grooves. The conductive layers are coated on the insulating layers and are insulating with the heat dissipative block. The wires are electrically connected with the conductive layers and the chip. Since the insulating layer is only coated on the portion between the conductive layer and the heat dissipative block and the other portion of the heat dissipative block is naked, the heat dissipative area is increased and the heat dissipative efficiency is improved. Besides, this invention also provides a heat dissipative assembly formed by the heat dissipative blocks.

Description

201029123 六、發明說明： 【發明所屬之技術領域】 尤指—種散熱塊組 本發明係有關於一種發光二極體 件及包括該散熱塊的發光二極體。 【先前技術】 發光二極體在發亮的時候，由於1 姦吐士曰也π 一發先二極體晶粒會201029123 VI. Description of the Invention: [Technical Field of the Invention] In particular, the present invention relates to a light-emitting diode and a light-emitting diode including the same. [Prior Art] When the light-emitting diode is lit, it is also due to a traitor

2大㈣熱…如果不將熱能即時移除的話，則會降低 :先一極體的發光效能及減短其使用壽命，所 通常皆具有散熱結構；請參照第1所示，係為 各知赉光二極體之示意圖，習知發光_ 極體1&通常包括一 政”、、鬼10a、一發光二極體晶粒2〇a、 # ^ m ^ .η 稷數、名緣層30a、 锼數導電塊4〇a以及複數金線5〇a。 散熱塊10a與導電塊40a原本係為同一塊金屬，而利 =刻的方式將此金屬塊_出空隙，所以此金屬塊則被 :為散熱塊10a以及位於散熱塊i〇a兩侧的導電塊術， 發光二極體晶粒2〇a係貼接於散熱塊上；絕緣層 則被填注於散熱塊10a與導電塊4〇a之間的空隙，二八令 f鬼恤與導⑽40a相互絕緣，最後再以金線50a ϋ 毛光二極體晶粒2〇a與導電層4〇a。 θ然而，此種習知的發光二極體la在實際使用上仍具有 問題點，由於散熱塊l〇a以及導電塊4〇a係從同一塊金屬 蝕刻分出的，所以會造成位於中央的散熱塊i〇a的體積不 °大所以發光二極體晶粒20a發出的熱能則無法快速地 42 big (four) heat... If you do not remove the heat immediately, it will be reduced: the first one of the body's luminous performance and shorten its service life, usually have a heat dissipation structure; please refer to the first, as known Schematic diagram of the dimming diode, the conventional illuminating _ polar body 1 & usually includes a government, ghost 10a, a light-emitting diode crystal 2〇a, # ^ m ^ .η 稷, the edge layer 30a, The plurality of conductive blocks 4〇a and the plurality of gold wires 5〇a. The heat-dissipating block 10a and the conductive block 40a are originally the same piece of metal, and the metal block is out of the gap, so the metal block is: For the heat-dissipating block 10a and the conductive block on both sides of the heat-dissipating block i〇a, the light-emitting diode die 2〇a is attached to the heat-dissipating block; the insulating layer is filled in the heat-dissipating block 10a and the conductive block 4〇 The gap between a, the two-dimensional f-shirt and the guide (10) 40a are insulated from each other, and finally the gold wire 50a ϋ the light-emitting diode die 2〇a and the conductive layer 4〇a. θ However, this conventional illumination The diode la still has a problem in practical use, since the heat dissipating block l〇a and the conductive block 4〇a are etched from the same piece of metal, Therefore, the volume of the heat sink block i〇a located at the center is not large, so the heat energy emitted from the light-emitting diode die 20a cannot be quickly performed.

❹ 201029123 被散熱塊10a排出，將造成發光二極體晶粒20a溫度升高 而導致發光效率降低並減短其使用壽命。 另外，請參照第二圖，係為另一習知發光二極體之示 意圖，此種習知的發光二極體2b同樣包含一散熱塊10b、 一發光二極體晶粒20b、複數絕緣層30b、複數導電層 40b以及一金線50b。 發光一極體2b的製程如下述，先於散熱塊l〇b上開設 複數封閉狀的貫穿孔lib，將絕緣層30b覆蓋於散熱塊 l〇b的外表面以及貫穿孔ilb之内緣面，接著將導電層 40b鏡著於散熱塊iQb外表面的絕緣層3〇b上以及貫穿孔 lib内緣面的絕緣層30b上，其中，鍍著於散熱塊丨此外 表面的導電層40b係相互分隔；最後再將發光二極體晶粒 20b貼接於一導電層4〇b，並利用金線5此以連接發光二 極體晶粒20b及另一導電層4〇b。 一 但是，此種發光二極體2b的結構在實際使用 ㈣點，由於散熱塊⑽㈣表面都被絕緣層3覆有 貫穿:=:二法::=:二另外， :層鳥以及導電層概時，其加工較為繁雜 要解決之課Γ吾及解決上述之問題 乃 是本發明所 【發明内容】 5 201029123 本發明之一目的係提供一種散熱塊組件及包括該散熱 塊的發光—極體，藉由絕緣層僅鍍著於散熱塊與導電層接 觸的。卩位使政熱塊其他部分仍外露，以增加散熱面積， 提高散熱效能。 為了達成上述之目的，本發明係提供一種包括散熱塊 的發光二極體，包括一散熱塊、一發光二極體晶粒、二絕 緣層、二導電層以及二金線，其中，於該散熱塊開設有二 開放式槽道，該發光二極體晶粒固定於該散熱塊之一表 面，該等絕緣層分別鍍著於該等槽道内壁，該等導電層分 別鍍著於該等絕緣層上並與該散熱塊呈絕緣關係，該^金 線分別電性導接該等導電層與該發光二極體晶粒。 成上述之目的，本發㈣提供—種散熱塊組 散…'鬼組件包括由多數散熱塊所構成的一板體 設有間隔且平行排列的複數第一待切割線及心 刀割線垂直並相交的複數第二待切割線，任二 :由=、一第一待切割線及至少一第二待切割線所圍設 =孔並在該等第-待切割線上開設有呈陣列分佈的複數 本㈣她於先·賴達成的功效在於，解知 毛先一極體之散熱面積不夠大的缺點、 於槽道處而不鑛著整個散熱塊的外表面，增2 =鑛者 的面積，提升散熱效能;另外藉由二 了即省散熱塊在収開放式槽道時所 再、。 者，開放式槽道的結構在鑛著製程上較容易科，再 6 201029123 【實施方式】 有關本發明之詳細說明及技術内容，配合圖式說明如 下，然而所附圖式僅提供參考與說明用，並非用來對本發 明加以限制者。❹ 201029123 is discharged by the heat slug 10a, which will cause the temperature of the light emitting diode die 20a to rise, resulting in a decrease in luminous efficiency and a reduction in its service life. In addition, please refer to the second figure, which is a schematic diagram of another conventional light-emitting diode. The conventional light-emitting diode 2b also includes a heat-dissipating block 10b, a light-emitting diode die 20b, and a plurality of insulating layers. 30b, a plurality of conductive layers 40b, and a gold wire 50b. The process of the light-emitting diode 2b is as follows. A plurality of closed through holes lib are formed on the heat dissipation block 10b, and the insulating layer 30b is covered on the outer surface of the heat dissipation block 10b and the inner edge surface of the through hole ilb. Then, the conductive layer 40b is mirrored on the insulating layer 3〇b on the outer surface of the heat dissipation block iQb and on the insulating layer 30b of the inner surface of the through hole lib, wherein the conductive layer 40b plated on the outer surface of the heat dissipation block is separated from each other. Finally, the LED die 20b is attached to a conductive layer 4〇b, and the gold wire 5 is used to connect the LED die 20b and the other conductive layer 4〇b. However, the structure of the light-emitting diode 2b is actually used (4), since the surface of the heat-dissipating block (10) (4) is covered by the insulating layer 3: =: two methods::=: two additionally, : layer bird and conductive layer In view of the above, it is a subject of the present invention that solves the above problems and solves the above problems. [2010] The present invention provides a heat dissipating block assembly and a light-emitting body including the same. The insulating layer is only plated on the heat dissipating block in contact with the conductive layer. The niche keeps the rest of the political block still exposed to increase the heat dissipation area and improve heat dissipation. In order to achieve the above object, the present invention provides a light emitting diode including a heat dissipating block, comprising a heat dissipating block, a light emitting diode die, two insulating layers, two conductive layers, and two gold wires, wherein the heat dissipation The illuminating diode is fixed on the surface of one of the heat dissipating blocks, and the insulating layers are respectively plated on the inner walls of the channels, and the conductive layers are respectively plated on the insulating layers. The layer is electrically insulated from the heat dissipating block, and the gold wire electrically connects the conductive layer and the light emitting diode die. For the above purpose, the present invention provides a heat-dissipating block assembly. The ghost component includes a plate body composed of a plurality of heat-dissipating blocks, and the plurality of first to-be-cut lines and the heart-knife cutting lines are vertically and intersected. a plurality of second to-be-cut lines, any two: a = hole is defined by =, a first to-be-cut line, and at least a second line to be cut, and a plurality of arrays are arranged on the first-to-be-cut line (4) The effect of her in the first, Lai, is to solve the shortcomings of the heat-dissipating area of Mao Xianyi's body, not to mine the outer surface of the whole heat-dissipating block, increase 2 = the area of the mine, improve The heat dissipation performance; in addition, the second heat dissipation block is used to re-open the open channel. The structure of the open channel is relatively easy to be used in the mining process, and then 6 201029123 [Embodiment] The detailed description and technical contents of the present invention are as follows with reference to the drawings, but the drawings only provide a reference and description. It is not intended to limit the invention.

請參閱第三至五圖，係為本發明發光二極體之立體外 觀圖、本發明散熱塊組件之立體外觀圖以及本發明散熱塊 之立體外觀圖’本發明係提供—種包括散熱塊的發光二極 體1 ’包括-散熱塊10、一發光二極體晶粒2〇、二絕緣層 30、二導電層40以及二金線，其中： 於政熱塊10兩相對應侧分別開設有一開放式槽道 111 :本實施例中’散熱塊㈣呈矩形，而開放式槽道 111係開設於散熱塊1G之相互平㈣二 二側邊為第―側仙 #匕疋義。亥 一㈣19 月文‘、、、塊10另外二側邊則定義為第 一側邊12，而散熱塊1〇還具有一表面13。 另外’本實施例中，開放式槽 形，此锸讲此々制< 、u』之形狀係為半圓 A此種城在製程上較為方便 圓 熱塊10上開設封閉妝Μ 材科，右在散 為浪費。封閉狀的圓形貫孔’則移除的材料較多，較 便，因為通當#1著製程上亦較為方 口馮逋吊鍍者製程僅會將另— 1乃 111上而不會使整個 質鍍於開放式槽道 閉狀的貫孔在鍍著製程上則右I者上另—材質，所以封 hi則較方便加I則有—定的難度，而開放式槽道 7 201029123 最後’開放式槽道111之操作面積也較封閉式的貫孔 大’使得在開放式槽道111處進行加工較為方便；而半圓 形的開放式槽道111僅為本發明的一實施例，開放式槽道 ui的形狀不以此為限；而散熱塊10係為導熱性及導電性 良好的金屬材質’通常係為銅，但不以此材質為限。 發光二極體晶粒20固定於散熱塊10之表面13，本實施 例中，發光二極體晶粒20係貼接於散熱塊之頂面中央部 位，發光二極體晶粒20係為一長方體，但不以此型態為 限。 ’、、' 絕緣層30分別鍍著於該等槽道hi内壁；而導電層仙 分別鍍著於該等絕緣層30上並與散熱塊1〇呈絕緣關係1金 線50則分別電性導接導電層40與發光二極體晶粒2〇。， 絕緣層30更包括一延伸段31，延伸段31係貼著於散熱 塊10之表面13上；而導電層40更包括一銲接段4卜銲接段 41係貼著於延伸段31上’以供金線5〇之一端銲固。Please refer to the third to fifth figures, which are the three-dimensional appearance of the light-emitting diode of the present invention, the three-dimensional appearance of the heat-dissipating block assembly of the present invention, and the three-dimensional appearance of the heat-dissipating block of the present invention. The present invention provides a heat-dissipating block. The light-emitting diode 1' includes a heat-dissipating block 10, a light-emitting diode die 2, a second insulating layer 30, two conductive layers 40, and two gold wires, wherein: one of the two opposite sides of the political block 10 The open channel 111: In the present embodiment, the 'heat-dissipating block (4) is rectangular, and the open channel 111 is formed on the side of the heat-dissipating block 1G (four) and two-two sides is the first side. Haiyi (4) 19th ‘,,, and the other two sides of the block 10 are defined as the first side 12, and the heat sink block 1〇 also has a surface 13. In addition, in the present embodiment, the open trough shape, and the shape of the tantalum < u, u is a semicircle A. This kind of city is more convenient in the process of opening the thermal block 10 to open the closed makeup material, right It is a waste. The closed circular through-holes remove more material and are more convenient, because the process of the #1 is more square, and the process of the slabs will only be the other one. The entire through-hole plated in the open channel is closed on the plating process, and the right one is on the other material, so the seal hi is more convenient to add I, the difficulty is fixed, and the open channel 7 201029123 last 'The operating area of the open channel 111 is also larger than the closed through hole' makes it easier to process at the open channel 111; and the semicircular open channel 111 is only one embodiment of the present invention. The shape of the open channel ui is not limited thereto; and the heat sink block 10 is a metal material having good thermal conductivity and electrical conductivity, which is usually copper, but is not limited to this material. The light-emitting diode die 20 is fixed on the surface 13 of the heat-dissipating block 10. In this embodiment, the light-emitting diode die 20 is attached to the central portion of the top surface of the heat-dissipating block, and the light-emitting diode die 20 is one. Cuboid, but not limited to this type. The insulating layers 30 are respectively plated on the inner walls of the channels hi; and the conductive layers are respectively plated on the insulating layers 30 and insulated from the heat dissipating block 1; the gold wires 50 are respectively electrically conductive. The conductive layer 40 and the light emitting diode die 2 are connected. The insulating layer 30 further includes an extending portion 31 attached to the surface 13 of the heat dissipating block 10; and the conductive layer 40 further includes a soldering portion 4 to which the soldering portion 41 is attached to the extending portion 31. One end of the gold wire is welded.

另外’本發明還提供-種用於發光二極體之散熱塊电 件8，散熱塊組件8包括由多數散熱塊1〇所構成的一板體 8〇，於板體80上設有間隔且平行排列的複數第一待切割線 81及與該等第-待切割線81垂直並相交的複數第二待 線82，任一該散熱塊10由至少一第一待切割線幻及至少二 第二待切割線82所圍設而成，並在該等第—待切割線耵上 開設有呈陣列分佈的複數貫穿孔83 ;貫穿孔83的形狀 圓形，但不以此為限；而第二待切割線82係形 二 鄰貫穿孔83之間。 —相 8 201029123 ，响參閱六至八圖，係分別為第五圖沿剖面線6-β之剖 視圖本♦明發光二極體封I示意圖（—）以及本發明發 光二極體封裝示意圖（〇,本發明包括散熱塊的發光二 極體1之封裝製程如下，於散熱塊ίο的開放式槽道m處 鍍著-層絕緣層30 ’而絕緣層3G僅鑛著於開放式槽道出 内壁’而賴著於整個散熱塊料表面，因此，可增加散 熱塊10的散熱面積’以提高散熱塊1()的散熱效能；接著再 將導電層40鍍著於絕緣層3〇上。 ^ θ參閱九及十圖，係分別為本發明發光二極體封裝示 思圖（一）以及封震示意圖（四），接著再將發光二極體 曰曰粒20固定於放熱塊1Q之頂面’並將金線μ電性導接發光 極體曰曰粒2G與導電層4〇 ;最後再於發光二極體晶粒卻所 在的散熱塊1G外表面上錢著—層介f和以及 70。 鍍著&quot;質層60係為了使反射層7〇能鍍著於散熱塊切 ©=’因為銅無法直接鑛上金屬材料，所以必須先在散熱塊 上鍍著-層介質_，如此反射職才能㈣於散熱塊 上’而反射層70之作用在於當發光二極體晶粒卻發亮 時，能以反射層70來對發光二極體晶粒20發出的光作最大 ^利用，以提高發光效率，而反射層70係可為金或銀材 二參閱第十-及十二圖’係分別為本發明散熱塊組件 另一實施例之立體外觀圖以及本發明發光二極體另一實施 體外觀圖’本發明還提供另—種切割散熱塊組件8 9 201029123 的方,，而第二待切割線82係通過該等貫穿孔83。 散熱塊10具有相互平行的二第—侧邊n以及二第二側 砧：開放式槽道lu則設於第一側邊U與第二侧邊I〗 =處，且此二開放式槽道m將成對角設置，而開放 ❹ 的私# -/述虽知本發明之散熱塊組件及包括該散熱塊 ^ 極體已具有產業利職、_性與進步性，又本 亦未曾見於同類產品及公開使用，完全符合發 專利申凊要件，爰依專利法提出申請。 【圖式簡單說明】 第-圖係、為習知發光二極體之示意圖。 第:圖係為另一習知發光二極體之示意圖。 =三圖係、為本發明發光二極體之立體外觀圖。 ❹=四圖料本發明散熱塊組件之立體外觀圖。 五圖係為本發明散熱塊之立體外觀圖。 第六圖係第五圖沿剖面線6_6之剖視圖。 =七圖係'為本發明發光二極體封裝示意圖（―）。 八圖係、為本發明發光二極體封裝示意圖（二）。 九圖係、為本發明發光二極體封裝示意圓（三卜 ::圖係為本發明發光二極體封農示意圖（四）。 一目係、為本發明散熱塊組件另一實施例之立體外觀 10 201029123 第十二圖 係為本發明發光二極體另一實施例之立體外觀 圖。 【主要元件符號說明】 〈習知〉In addition, the present invention also provides a heat dissipating block electrical component 8 for a light emitting diode. The heat dissipating block assembly 8 includes a plate body 8〇 composed of a plurality of heat dissipating blocks 1〇, and the plate body 80 is provided with a space. a plurality of first to-be-cut lines 81 arranged in parallel and a plurality of second to-be-received lines 82 perpendicular to and intersecting the first-to-be-cut lines 81, any one of the heat-dissipating blocks 10 being at least one first to be cut and at least two The second to-be-cut line 82 is surrounded by a plurality of through-holes 83 arranged in an array on the first to-be-cut line ;; the shape of the through-holes 83 is circular, but not limited thereto; The two to-be-cut lines 82 are formed between the two adjacent through holes 83. - phase 8 201029123, refer to the six to eight figure, which is a cross-sectional view of the fifth figure along the section line 6-β. The schematic diagram of the light-emitting diode package I (-) and the light-emitting diode package of the present invention (〇 The packaging process of the light-emitting diode 1 including the heat-dissipating block of the present invention is as follows. The insulating layer 30 is plated with the insulating layer 30' at the open channel m of the heat-dissipating block, and the insulating layer 3G is only mined on the inner wall of the open channel. 'And depending on the surface of the entire heat-dissipating block material, therefore, the heat-dissipating area of the heat-dissipating block 10 can be increased to improve the heat-dissipating efficiency of the heat-dissipating block 1 (); then the conductive layer 40 is plated on the insulating layer 3〇. ^ θ Referring to Figures 9 and 10, respectively, the light-emitting diode package of the present invention is shown (1) and the schematic diagram of the shock-proof (4), and then the light-emitting diode 20 is fixed on the top surface of the heat-dissipating block 1Q. The gold wire is electrically connected to the illuminating pole body 2G and the conductive layer 4 〇; finally, the outer surface of the heat dissipating block 1G where the illuminating diode dies are located is on the surface of the heat sink 1G and 70. Plated &quot;plasma 60 series in order to make the reflective layer 7〇 can be plated on the heat sink block ©=' Copper cannot be directly metallized, so it must be plated with a layer of dielectric on the heat sink, so that it can be used on the heat sink. The function of the reflective layer 70 is when the light emitting diode is bright. The reflective layer 70 can be used to maximize the light emitted by the LED die 20 to improve the luminous efficiency, and the reflective layer 70 can be gold or silver. See the tenth and twelfth A perspective view of another embodiment of the heat sink assembly of the present invention and an external view of another embodiment of the light emitting diode of the present invention. The present invention further provides a method for cutting the heat sink block 8 9 201029123, and the second The to-be-cut line 82 passes through the through-holes 83. The heat-dissipating block 10 has two first side edges n and two second side anvils parallel to each other: the open channel lu is disposed on the first side U and the second side I 〗 〖, and the two open channels m will be set diagonally, and the open ❹ # - 述 述 述 虽 虽 虽 虽 虽 虽 虽 虽 虽 虽 虽 虽 虽 虽 虽 虽 虽 虽 虽 虽 虽 虽 虽 虽 虽 虽 虽 虽 虽 虽 散热 散热 散热 散热_ Sex and progressive, and have not been seen in similar products and public use, completely The application for the patent is filed in accordance with the Patent Law. [Simplified illustration] The first-picture system is a schematic diagram of a conventional light-emitting diode. The figure is a schematic diagram of another conventional light-emitting diode. The three-dimensional appearance is a three-dimensional appearance of the light-emitting diode of the present invention. ❹=four-dimensional material is a three-dimensional appearance of the heat-dissipating block assembly of the present invention. The fifth figure is a three-dimensional appearance of the heat-dissipating block of the present invention. The fifth figure is a cross-sectional view along the section line 6_6. = Seven diagrams are the schematic diagram of the package of the light-emitting diode of the present invention (-). The eight-picture system is a schematic diagram of the package of the light-emitting diode of the present invention (2). The light-emitting diode package of the invention has a schematic circle (three b:: the figure is a schematic diagram of the invention of the light-emitting diode of the invention (4). The present invention is a three-dimensional appearance of another embodiment of the light-emitting diode assembly of the present invention. [Main component symbol description] <Appreciation>

la 發光二極體 10a 散熱塊 20a 發光二極體晶粒 30a 絕緣層 40a 導電塊 50a 金線 lb 發光二極體 10b 散熱塊 lib 貫穿孔 20b 發光二極體晶粒 30b 絕緣層 40b 導電層 50b 金線 〈本發明 &gt; 1 發光二極體 10 散熱塊 11 第一側邊 111 開放式槽道 12 第二側邊 13 表面 20 發光二極體晶粒 30 絕緣層 31 延伸段 40 導電層 41 銲接段 50 金線 60 介質層 70 反射層 8 散熱塊組件 201029123 80 板體 81 第一待切割線 82 第二待切割線 83 貫穿孔La light emitting diode 10a heat sink 20a light emitting diode die 30a insulating layer 40a conductive block 50a gold wire lb light emitting diode 10b heat sink lib through hole 20b light emitting diode die 30b insulating layer 40b conductive layer 50b gold Line <present invention> 1 light emitting diode 10 heat sink block 11 first side 111 open channel 12 second side 13 surface 20 light emitting diode die 30 insulating layer 31 extension 40 conductive layer 41 soldering section 50 gold wire 60 dielectric layer 70 reflective layer 8 heat sink block assembly 201029123 80 plate body 81 first line to be cut 82 second line to be cut 83 through hole

1212

Claims (1)

201029123 七、申請專利範圍： 1. 一種包括散熱塊的發光二極體，包括 一散熱塊，開設有二開放式槽道； 發光二極體晶粒 &amp; π孩散熱塊〜 二絕緣層，分別鍍著於該等槽道内壁，· 二導電層’分職著於料絕緣層上 關係；以及 成熱塊呈絕緣 ❹ 刀及電性導接該等導電層興m發光 其 2. 如請求項第！項所述包括散熱塊的發光二極； 中，該一槽道係分別位於該散熱塊之兩相對應側。 3. 如咐求項第i項所述包括散熱塊的發光二極體，立 塊之=3更包括^伸段，該延伸段伽著於該散熱 4.如請求項第3項所述包括散熱塊的發光二極體，其 〜導電層更包括—銲接段，該銲接段係貼著於該延伸 © X上’以供該金線之一端鲜固。 5 β月求項第工；^所述包括散熱塊的發光二極體，其 、s政…、塊係呈矩形，該等槽道係開設於該散熱塊相互 平行之二側邊。 .如喷求項第5項所述包括散熱塊的發光二極體，其 中，該等槽道係呈半圓形。 7.如睛求項第1項所述包括散熱塊的發光二極體，其 中’該散熱塊係呈矩形，t亥等槽道係開設於該散熱塊之二 對角端。 13 201029123 其 8. 如請求項第7項所述包括散熱塊的發 中，該等槽道係呈四分之一的圓形。 枉體 9. 如請求項第丨項所述包括散熱塊的發光二 更包含鑛著於該散熱塊表面的-介質層以及鍍 層上的一反射層。 、〜&quot;質 e 10· 一種散熱塊組件，包括由多數散熱塊所構成 體，於該板體上設有間隔且平行排列的複數第-待切4 及/、該專第一待切割線垂直並相交的複數 r該散熱塊由至少—第—待切割線及至少n切割 線所圍設而成，並在該等第_待切割線上開設有呈陣列分 佈的複數貫穿孔。 11. 如請求項第10項所述散熱塊組件，其中，該第二待 切割線係形成於任二相鄰該貫穿孔之間。 12. 如請求項第1G項所述散熱塊組件，其中，該第二待 切割線係通過該等貫穿孔。 ❹ 14201029123 VII. Patent application scope: 1. A light-emitting diode including a heat-dissipating block, comprising a heat-dissipating block, having two open channels; a light-emitting diode die &amp; π child heat-dissipating block~two insulating layers, respectively Plated on the inner wall of the channel, · the two conductive layers 'divisionally on the material insulation layer; and the heat block is an insulating knives and electrically conductive the conductive layer to emit light. 2. The first! The light-emitting diode includes a heat-dissipating block; wherein the channel is located on two corresponding sides of the heat-dissipating block. 3. If the light-emitting diode including the heat-dissipating block is referred to in item i of the claim, the =3 of the stand further includes a stretched portion, and the extended portion is immersed in the heat dissipation 4. As described in item 3 of the claim The light-emitting diode of the heat-dissipating block, wherein the conductive layer further comprises a soldering section, the soldering section is attached to the extension © X for freshening one end of the gold wire. 5 β month-finding work; ^ The light-emitting diode including the heat-dissipating block, the s..., the block is rectangular, and the channels are formed on two sides of the heat-dissipating block parallel to each other. The light-emitting diode comprising the heat-dissipating block according to Item 5 of the invention, wherein the channels are semi-circular. 7. The light-emitting diode according to claim 1, wherein the heat-dissipating block has a rectangular shape, and the channel is formed at two diagonal ends of the heat-dissipating block. 13 201029123 8. In the case of a heat sink block as described in item 7 of the claim, the channels are in a quarter circle. The body 9 includes a light-emitting layer including a heat-dissipating block as described in the above item, and a dielectric layer on the surface of the heat-dissipating block and a reflective layer on the plating layer. , a &lt; quality e 10 · a heat sink block assembly, comprising a body composed of a plurality of heat sink blocks, the plate body is provided with a plurality of spaced apart and parallel arranged - the first to be cut 4 and /, the special first to be cut line The plurality of vertical heat sinks are surrounded by at least a first to-be-cut line and at least an n-cut line, and a plurality of through-holes distributed in an array are disposed on the first to-be-cut lines. 11. The heat slug assembly of claim 10, wherein the second line to be cut is formed between any two adjacent through holes. 12. The heat slug assembly of claim 1G, wherein the second line to be cut passes through the through holes. ❹ 14
TW98102043A 2009-01-20 2009-01-20 A heat dissipative assembly and a light emitting diode package including a heat dissipative block TW201029123A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW98102043A TW201029123A (en) 2009-01-20 2009-01-20 A heat dissipative assembly and a light emitting diode package including a heat dissipative block

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW98102043A TW201029123A (en) 2009-01-20 2009-01-20 A heat dissipative assembly and a light emitting diode package including a heat dissipative block

Publications (1)

Publication Number Publication Date
TW201029123A true TW201029123A (en) 2010-08-01

Family

ID=44853926

Family Applications (1)

Application Number Title Priority Date Filing Date
TW98102043A TW201029123A (en) 2009-01-20 2009-01-20 A heat dissipative assembly and a light emitting diode package including a heat dissipative block

Country Status (1)

Country Link
TW (1) TW201029123A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI401829B (en) * 2010-10-07 2013-07-11 Advanced Optoelectronic Tech Led pakage and method for manufacturing the same
TWI635470B (en) * 2017-07-04 2018-09-11 錼創科技股份有限公司 Light emitting module and display device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI401829B (en) * 2010-10-07 2013-07-11 Advanced Optoelectronic Tech Led pakage and method for manufacturing the same
TWI635470B (en) * 2017-07-04 2018-09-11 錼創科技股份有限公司 Light emitting module and display device
US11127341B2 (en) 2017-07-04 2021-09-21 PlayNitride Inc. Light emitting module and display device

Similar Documents

Publication Publication Date Title
EP3316300B1 (en) Light-emitting diode filament with a heat-dissipating structure and light bulb using the same
JP5279225B2 (en) Light emitting module and manufacturing method thereof
TWI362773B (en) Light emitting diode package, circuit board for light emitting diode package and method of manufacturing the same
CN103875084B (en) Manufacture the method for shell encapsulation type optical device and the optical device using this method manufacture
KR100729439B1 (en) Package structure of light emitting diode and method of manufacturing thereof
TW200623450A (en) Package structure of light emitting diode and its manufacture method
TW200805713A (en) Light-emitting diode lamp with low thermal resistance
CN103531686A (en) Light-emitting component and manufacturing method thereof
KR101253247B1 (en) substrate for light emitting device
KR101233121B1 (en) method for manufacturing light emitting diode array substrate with surface type and the light emitting diode array substrate thereby
CN105576103A (en) Light emitting device
CN105280626A (en) Ultra-small ultra-thin high-luminous-efficiency lateral-emission-type high-light white-light LED element
CN105321937A (en) Ultra small and ultrathin high luminous efficiency lateral emission type high light white light polycrystalline LED element
TW200814372A (en) Electronic component and method for manufacturing the same
WO2012098476A1 (en) Multi-functional heat sink for lighting products
JP2009158872A (en) Lighting device
TW201029123A (en) A heat dissipative assembly and a light emitting diode package including a heat dissipative block
CN103311410A (en) Integrated LED with high thermal conductivity and high breakdown voltage
JP2005167026A (en) Semiconductor light emitting device
WO2007013774A1 (en) Light emitting device package structure, method of manufacturing the light emitting device package structure, and method of manufacturing light emitting device adopting the same
CN202905774U (en) Substrate for light source module
CN204155954U (en) The highlighted white light LED element of a kind of extra small ultra-thin specular removal Quartering shot type
CN103579450A (en) Light-emitting diode lamp bar
EP2484969A1 (en) Led energy-saving lamp
TW200725838A (en) Thermal conductive apparatus and manufacturing method thereof