TW201027722A - Quad memory cell and method of making same - Google Patents

Quad memory cell and method of making same Download PDF

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Publication number
TW201027722A
TW201027722A TW098143764A TW98143764A TW201027722A TW 201027722 A TW201027722 A TW 201027722A TW 098143764 A TW098143764 A TW 098143764A TW 98143764 A TW98143764 A TW 98143764A TW 201027722 A TW201027722 A TW 201027722A
Authority
TW
Taiwan
Prior art keywords
diode
layer
resistivity switching
resistivity
switching storage
Prior art date
Application number
TW098143764A
Other languages
English (en)
Chinese (zh)
Inventor
Roy E Scheuerlein
Original Assignee
Sandisk 3D Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/318,022 external-priority patent/US7910407B2/en
Priority claimed from US12/318,001 external-priority patent/US7923812B2/en
Application filed by Sandisk 3D Llc filed Critical Sandisk 3D Llc
Publication of TW201027722A publication Critical patent/TW201027722A/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1606—Graphene
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/868—PIN diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H10B63/22—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes of the metal-insulator-metal type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H10B63/84—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/72—Array wherein the access device being a diode

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Semiconductor Memories (AREA)
  • Mram Or Spin Memory Techniques (AREA)
TW098143764A 2008-12-19 2009-12-18 Quad memory cell and method of making same TW201027722A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/318,022 US7910407B2 (en) 2008-12-19 2008-12-19 Quad memory cell and method of making same
US12/318,001 US7923812B2 (en) 2008-12-19 2008-12-19 Quad memory cell and method of making same

Publications (1)

Publication Number Publication Date
TW201027722A true TW201027722A (en) 2010-07-16

Family

ID=41693147

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098143764A TW201027722A (en) 2008-12-19 2009-12-18 Quad memory cell and method of making same

Country Status (2)

Country Link
TW (1) TW201027722A (fr)
WO (1) WO2010080437A2 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106796984A (zh) * 2014-04-10 2017-05-31 慧与发展有限责任合伙企业 1‑选择器n‑电阻器忆阻设备

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107579087B (zh) 2016-07-04 2020-04-07 中芯国际集成电路制造(上海)有限公司 一种存储器单元阵列结构和电子装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4646266A (en) 1984-09-28 1987-02-24 Energy Conversion Devices, Inc. Programmable semiconductor structures and methods for using the same
US5751012A (en) 1995-06-07 1998-05-12 Micron Technology, Inc. Polysilicon pillar diode for use in a non-volatile memory cell
US5835396A (en) 1996-10-17 1998-11-10 Zhang; Guobiao Three-dimensional read-only memory
NO972803D0 (no) 1997-06-17 1997-06-17 Opticom As Elektrisk adresserbar logisk innretning, fremgangsmåte til elektrisk adressering av samme og anvendelse av innretning og fremgangsmåte
US6034882A (en) 1998-11-16 2000-03-07 Matrix Semiconductor, Inc. Vertically stacked field programmable nonvolatile memory and method of fabrication
US6420215B1 (en) 2000-04-28 2002-07-16 Matrix Semiconductor, Inc. Three-dimensional memory array and method of fabrication
US6618295B2 (en) 2001-03-21 2003-09-09 Matrix Semiconductor, Inc. Method and apparatus for biasing selected and unselected array lines when writing a memory array
JP4355136B2 (ja) * 2002-12-05 2009-10-28 シャープ株式会社 不揮発性半導体記憶装置及びその読み出し方法
US7504051B2 (en) 2003-09-08 2009-03-17 Nantero, Inc. Applicator liquid for use in electronic manufacturing processes
JP5091491B2 (ja) * 2007-01-23 2012-12-05 株式会社東芝 不揮発性半導体記憶装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106796984A (zh) * 2014-04-10 2017-05-31 慧与发展有限责任合伙企业 1‑选择器n‑电阻器忆阻设备

Also Published As

Publication number Publication date
WO2010080437A3 (fr) 2010-09-02
WO2010080437A2 (fr) 2010-07-15

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