TW201027617A - Oxidation and cleaning methods for silicone wafers - Google Patents
Oxidation and cleaning methods for silicone wafers Download PDFInfo
- Publication number
- TW201027617A TW201027617A TW98137068A TW98137068A TW201027617A TW 201027617 A TW201027617 A TW 201027617A TW 98137068 A TW98137068 A TW 98137068A TW 98137068 A TW98137068 A TW 98137068A TW 201027617 A TW201027617 A TW 201027617A
- Authority
- TW
- Taiwan
- Prior art keywords
- wafer
- layer
- oxide layer
- cleaning
- solution
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 88
- 238000004140 cleaning Methods 0.000 title claims abstract description 24
- 230000003647 oxidation Effects 0.000 title claims abstract description 16
- 238000007254 oxidation reaction Methods 0.000 title claims abstract description 16
- 235000012431 wafers Nutrition 0.000 title abstract description 54
- 229920001296 polysiloxane Polymers 0.000 title 1
- 238000005530 etching Methods 0.000 claims abstract description 39
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 24
- 239000008367 deionised water Substances 0.000 claims abstract description 16
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 16
- 230000001590 oxidative effect Effects 0.000 claims abstract description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 66
- 229910001925 ruthenium oxide Inorganic materials 0.000 claims description 13
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims description 13
- 239000000126 substance Substances 0.000 claims description 13
- 238000005520 cutting process Methods 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 239000013078 crystal Substances 0.000 claims description 8
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims description 8
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 7
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 6
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 6
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 6
- 229910052707 ruthenium Inorganic materials 0.000 claims description 6
- 230000002378 acidificating effect Effects 0.000 claims description 5
- 230000018044 dehydration Effects 0.000 claims description 5
- 238000006297 dehydration reaction Methods 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 239000000356 contaminant Substances 0.000 claims description 4
- 239000007789 gas Substances 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000012530 fluid Substances 0.000 claims description 2
- 238000005191 phase separation Methods 0.000 claims description 2
- 229910052684 Cerium Inorganic materials 0.000 claims 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims 1
- -1 by thermal oxidation Chemical compound 0.000 claims 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims 1
- 230000001815 facial effect Effects 0.000 claims 1
- SUKJFIGYRHOWBL-UHFFFAOYSA-N sodium hypochlorite Chemical compound [Na+].Cl[O-] SUKJFIGYRHOWBL-UHFFFAOYSA-N 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 9
- 229910052710 silicon Inorganic materials 0.000 abstract description 8
- 239000010703 silicon Substances 0.000 abstract description 8
- 239000002253 acid Substances 0.000 abstract description 5
- 239000012535 impurity Substances 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 3
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 31
- 239000000243 solution Substances 0.000 description 25
- 239000000872 buffer Substances 0.000 description 18
- 239000007864 aqueous solution Substances 0.000 description 16
- 230000006378 damage Effects 0.000 description 13
- 238000009792 diffusion process Methods 0.000 description 11
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 9
- 235000011121 sodium hydroxide Nutrition 0.000 description 9
- 239000004575 stone Substances 0.000 description 9
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 8
- 238000001035 drying Methods 0.000 description 7
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- 230000007797 corrosion Effects 0.000 description 5
- 238000005260 corrosion Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 229910052715 tantalum Inorganic materials 0.000 description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 5
- 208000005156 Dehydration Diseases 0.000 description 4
- 238000011109 contamination Methods 0.000 description 4
- 150000002431 hydrogen Chemical class 0.000 description 4
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 230000002209 hydrophobic effect Effects 0.000 description 3
- 230000005661 hydrophobic surface Effects 0.000 description 3
- 238000009776 industrial production Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 2
- 241000209094 Oryza Species 0.000 description 2
- 235000007164 Oryza sativa Nutrition 0.000 description 2
- 239000003929 acidic solution Substances 0.000 description 2
- 238000001354 calcination Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 125000005842 heteroatom Chemical group 0.000 description 2
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 2
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 235000009566 rice Nutrition 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 239000005944 Chlorpyrifos Substances 0.000 description 1
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- 241000282320 Panthera leo Species 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- 125000000129 anionic group Chemical group 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- ISQINHMJILFLAQ-UHFFFAOYSA-N argon hydrofluoride Chemical compound F.[Ar] ISQINHMJILFLAQ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 239000013522 chelant Substances 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- SBPBAQFWLVIOKP-UHFFFAOYSA-N chlorpyrifos Chemical compound CCOP(=S)(OCC)OC1=NC(Cl)=C(Cl)C=C1Cl SBPBAQFWLVIOKP-UHFFFAOYSA-N 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- YLGXILFCIXHCMC-JHGZEJCSSA-N methyl cellulose Chemical compound COC1C(OC)C(OC)C(COC)O[C@H]1O[C@H]1C(OC)C(OC)C(OC)OC1COC YLGXILFCIXHCMC-JHGZEJCSSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000012465 retentate Substances 0.000 description 1
- PNYYBUOBTVHFDN-UHFFFAOYSA-N sodium bismuthate Chemical compound [Na+].[O-][Bi](=O)=O PNYYBUOBTVHFDN-UHFFFAOYSA-N 0.000 description 1
- KKCBUQHMOMHUOY-UHFFFAOYSA-N sodium oxide Chemical compound [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 description 1
- 229910001948 sodium oxide Inorganic materials 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-N sulfonic acid Chemical compound OS(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE200810056455 DE102008056455B3 (de) | 2008-11-07 | 2008-11-07 | Oxidations- und Reinigungsverfahren für Siliziumscheiben |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201027617A true TW201027617A (en) | 2010-07-16 |
Family
ID=41559614
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW98137068A TW201027617A (en) | 2008-11-07 | 2009-10-30 | Oxidation and cleaning methods for silicone wafers |
Country Status (3)
| Country | Link |
|---|---|
| DE (1) | DE102008056455B3 (de) |
| TW (1) | TW201027617A (de) |
| WO (1) | WO2010052541A2 (de) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110600363A (zh) * | 2019-09-18 | 2019-12-20 | 武汉新芯集成电路制造有限公司 | 去除氧化硅的方法及半导体器件的制造方法 |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2955707B1 (fr) * | 2010-01-27 | 2012-03-23 | Commissariat Energie Atomique | Procede de realisation d'une cellule photovoltaique avec preparation de surface d'un substrat en silicium cristallin |
| CN102694078A (zh) * | 2012-06-16 | 2012-09-26 | 成都聚合科技有限公司 | 一种清洗高倍聚光光伏光电转换接收器模块工艺 |
| CN103341458A (zh) * | 2013-06-15 | 2013-10-09 | 成都聚合科技有限公司 | 一种高倍聚光光伏光电转换接收器电路板清洗工艺 |
| CN104384125A (zh) * | 2014-10-08 | 2015-03-04 | 昆山诃德新能源科技有限公司 | 一种高倍聚光太阳能光电接收器模块清洗工艺 |
| CN104384126A (zh) * | 2014-10-10 | 2015-03-04 | 昆山诃德新能源科技有限公司 | 一种高倍聚光光伏光电转换接收器电路板清洗工艺 |
| KR101846443B1 (ko) * | 2017-02-23 | 2018-04-06 | 엘지전자 주식회사 | 태양전지를 위한 산화막 형성 방법 |
| EP4238663A1 (de) | 2022-03-03 | 2023-09-06 | Arva Greentech AG | Verfahren zur entfernung von organischen verunreinigungen von oberflächen durch in situ erzeugte persulfate und persulfonate |
| CN117457549B (zh) * | 2023-12-25 | 2024-04-12 | 富芯微电子有限公司 | 一种用于晶闸管管芯生产的表面腐蚀设备 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1514949C3 (de) * | 1966-03-26 | 1975-06-19 | Telefunken Patentverwertungsgesellschaft Mbh, 7900 Ulm | Verfahren zum Herstellen eines Halbleiterbauelementes oder einer Halbleiterschaltung |
| US5229334A (en) * | 1990-08-24 | 1993-07-20 | Seiko Epson Corporation | Method of forming a gate insulating film involving a step of cleaning using an ammonia-peroxide solution |
| JPH09115869A (ja) * | 1995-08-10 | 1997-05-02 | Seiko Epson Corp | 半導体装置の製造方法及び半導体装置 |
| WO2000072366A1 (en) * | 1999-05-21 | 2000-11-30 | Plasmasil, L.L.C. | Method for improving thickness uniformity of semiconductor wafers |
| US6230720B1 (en) * | 1999-08-16 | 2001-05-15 | Memc Electronic Materials, Inc. | Single-operation method of cleaning semiconductors after final polishing |
| DE19962136A1 (de) * | 1999-12-22 | 2001-06-28 | Merck Patent Gmbh | Verfahren zur Rauhätzung von Siliziumsolarzellen |
| JP2004172271A (ja) * | 2002-11-19 | 2004-06-17 | Mitsubishi Electric Corp | 太陽電池の製造方法及び太陽電池 |
| EP1988567B1 (de) * | 2006-02-01 | 2013-06-05 | Tohoku University | Verfahren zur verringerung der mikrorauhigkeit einer halbleiteroberfläche |
| DE102007004060B4 (de) * | 2007-01-22 | 2013-03-21 | Gp Solar Gmbh | Verwendung einer Ätzlösung aufweisend Wasser, Salpetersäure und Schwefelsäure und Ätzverfahren |
| KR100931196B1 (ko) * | 2007-10-10 | 2009-12-10 | 주식회사 실트론 | 실리콘 웨이퍼 세정 방법 |
-
2008
- 2008-11-07 DE DE200810056455 patent/DE102008056455B3/de not_active Expired - Fee Related
-
2009
- 2009-10-30 TW TW98137068A patent/TW201027617A/zh unknown
- 2009-11-04 WO PCT/IB2009/007310 patent/WO2010052541A2/en active Application Filing
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110600363A (zh) * | 2019-09-18 | 2019-12-20 | 武汉新芯集成电路制造有限公司 | 去除氧化硅的方法及半导体器件的制造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2010052541A2 (en) | 2010-05-14 |
| DE102008056455B3 (de) | 2010-04-29 |
| WO2010052541A3 (en) | 2010-10-07 |
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