201025665 六、發明說明： 【發明所屬之技術領域】 本發明是有關於一種半導體發光元件，特別是指一種 色度分佈均勻的半導體發光元件及其製法。 【先前技術】 一般藉由螢光粉混光的半導體發光元件，其設置螢光 粉的方式通常是將螢光粉混在膠體中，再將混有螢光粉的 螢光膠體灌入已設有半導體發光晶片的支架碗杯中，待其 0 固化後，外層再包覆透明膠層保護。如圖1所示，為膠體 固化成形後的晶片91、螢光膠體92與透明膠層93相對關 係的示意圖。由於一般晶片91的中心發光強度較強，而且 由圖1可知，螢光膠體92在碗杯（圖未示）中成形，故呈 碗杯狀，使得晶片91在各角度射出的光線激發螢光粉（包 含在螢光膠體92中）的路徑不一致，導至各立體角所發出 的色度分佈非常不均勻。 另一種螢光粉的設置方式，如圖2所示，是將螢光粉 ® 94直接均勻塗佈在晶片95上。此種封裝方式可使晶片95 各角度射出的光線激發螢光粉94的路徑較一致，而能改善 整體出光均勻度。然而，一般常用的螢光粉94多為黃色， 而黃色螢光粉94會因為一般半導體晶片95的正向光場較 側向光場強，導致中心色溫會較其他出光角度偏高。 【發明内容】 因此，本發明提供一種依據半導體發光晶片的光強度 分佈而調整受激發光層（例如榮光谬體、榮光粉）之形狀 201025665 的半導體發光元件，藉由受激發光層之形狀補償晶片發光 強度不均的缺點，達到使色度均勻的目的。 本發明另提供一種在受激發光層與半導體晶片之間設 一可透光間隔層的半導體發光元件，使其在達到色度均勻 之目的外，還可藉由可透光間隔層隔離受激發光層與半導 體晶片’以達到降低受激發光體（例如螢光粉）因處於長 時間高溫所產生效率下降與結構不穩定的問題之目的。 本發明又提供一種進一步在受激發光層外設有可控制 光型的可透光層（例如透鏡或膠體）之半導體發光件，除 可達到使色度均勻的目的之外，還可達到控制光型的目的 〇 於是，本發明半導體發光元件，包含：一半導體晶片 及一受激發光層。該受激發光層覆蓋於該半導體晶片上， 該受激發光層對應該半導體晶片的發光強度較強區域的厚 度較厚’對應發光強度較弱區域厚度較薄，該受激發光層 對應於發光強度較強區域的厚度與對應於發光強度較弱區 域的厚度比大於1而小於5 (1<厚度比<5)。 該受激發光層的厚度分佈係依據該半導體晶片的出光 強度分佈而調整。藉此可使色度分佈更加均勻。此外，該 受激發光層可由可受激發光體，例如螢光粉或磷光粉，均 勻混在膝艎中，藉由治具成形固化而成，或由受激發光體 直接成形。而且，該受激發光層可包括可受激發出不同顏 色光的多數層受激發次層，例如該受激發光層可包括兩層 受激發次層，可分別為黃色螢光膠體層及紅色螢光穋體層 201025665 ’以增加該半導體發光元件的演色性。 進一步地，本發明半導體發光元件還可包含一設於該 半導體晶片與該受激發光層之間的可透光間隔層。該可透 光間隔層可用透明膠體製成，用以隔離該受激發光層’以 降低受激發光體因處於長時間高溫所產生效率下降與結構 不穩定的問題。 此外’本發明半導體發光元件亦可再包含一覆蓋於該 受激發光層上的可透光層’例如透鏡或可透光膠體，用以 〇 調整光型，使該半導體發光元件的光型可以符合所要運用 的產品或系統。 本發明另提供一種半導體發光元件的製法，步驟包含 a) 提供一半導體晶片，並量測其出光強度分佈； b) 依據該半導趙晶片的出光強度分佈決定一受激發光層的 形狀，使該受激發光層對應該半導體晶片的發光強度較 強區域的厚度較厚，對應發光強度較弱區域厚度較薄， ® 以使各出光角度色溫均勻，並製作一具有該預定形狀的 治具；及 c) 藉由該治具於該半導體晶片上形成一受激發光層。 較佳地，該受激發光層對應於發光強度較強區域的厚 度與對應於發光強度較弱區域的厚度比大於！而小於5。 本發明半導體發光元件藉由受激發光層厚度分佈的調 整，來補償半導體晶片出光強度不均勻的缺陷，以增加半 導體發光元件色度的均勻性。此外，還可進一步藉由可透 201025665 光間隔層’降低受激發光體因處於長時間高溫所產生效率 下降與結構不穩定的問題。而且，亦可藉由覆蓋於該受激 發光層上的可透光層調整光型’使該半導體發光元件的光 型可以符合所要運用的產品或系統。 【實施方式】 有關本發明之則述及其他技術内容、特點與功效，在 以下配口參考圖式之五個較佳實施例的詳細說明中，將可 清楚的呈現。 參閲圖3〜圖6，本發明半導體發光元件之第一較佳實❹ 施例的實施步驟介紹如下： 1)取一半導體晶片11測試其出光強度分佈，以決定 預備成形的受激發光層丨2的形狀。 η)如圖3〜圖6所示為使受激發光層12成形的步驟。 圖3所示係先將半導體晶片u固定在一基板13上 。圖4所示係將用以使受激發光層12形成預定形狀 的一治具14放置於基板13上的預設位置，治具14 具有一進膠口 141及一出氣口 142，以供灌膠時使© 用。圖5所示係將受激發光體（圖未標號）混在膠 體（圖未標號）中，將膠體盛裝於針筒（圖未示）， 利用針筒將膠體由治具14的進膠口 141注入治具 14中，治具14中的空氣可由出氣口 142排出，待 膠趙充滿治具14後，藉由烘烤使膠體固化成形，而 形成受激發光層12。圖6所示，待膠體固化後，取 下治具14,即為本實施例半導體發光元件1的完成 201025665 品。在本實施例中，所使用的受激發光體為黃色螢 光粉，所使用膠體為一般可混合螢光粉的膠艎，混 合螢光粉與膠體的方法已為本發明所屬技術領域者 所周知，故不再詳述。 參閱圖7,本發明半導體發光元件之第二較佳實施例， 本實施例的實施步驟與第一較佳實施例大致相同，惟本 實施例的半導體發光元件2還包含一用以控制半導體晶片 21光型的可透光層23。可透光層23為一預先成形的透鏡 ® ，疋在文激發光層22固化成形後，再套設於受激發光層22 上，而將受激發光層22包覆❶藉由可透光層23調整光型 ，可使半導體發光元件2的光型可以符合所要運用的產品 或系統。 參閱圖8與圖9,本發明半導體發光元件之第三較佳實 施例，本實施例的實施步驟與第一較佳實施例大致相同， 惟，第一較佳實施例中所使用的治具14由可透光層33取 代，換言之，在本實施例中，可透光層33本身為透鏡，並 ® 可具有治具的功能，具有進膠口 331及出氣口 332。如圖8 所示，將兼具有控制光型及治具功能的可透光層33放置於 基板34上的預定位置，再利用針筒（圖未示）將混有螢光 粉的膠體（圖未示）注入可透光層33内，使其充滿可透光 層33並包覆半導想晶片31’如圖9所示，再經由供烤使膠 體固化，形成受激發光層32，即完成本實施例半導體發光 元件3的成品。 參閲圖10與圖11，本發明半導體發光元件之第四較佳 201025665 實施例，本實施例之半導體發光元件4具有兩種不同顏色 的螢光粉，使觉激發光層42具有兩層受激發光次層421、 422，其中内層的受激發光次層421含有黃色螢光粉，外層 的受激發光-人層422含有紅色螢光粉，藉此可增加半導體 發光元件4的演色性，而本實施例亦具有可控制光型的可 透光層43。 本實施例的實施步驟可結合第一較佳實施例及第三較 佳實施例的實施步驟，如圖1〇所示，利用與第一較佳實施 例相同的實施步驟先在基板44與半導體晶片41上形成内 層的受激發光次層421，再利用與第三較佳實施例相同的實 施步驟，以預先成形的可透光層43為治具，如圖η所示 ，再將混有紅色螢光粉的膠體充滿含有黃色螢光粉的受激 發光次層421與可透光層43之間的空間，經烘烤固化後， 形成另一受激發光次層422，同時完成本實施例半導體發光 元件4的成品。 本實施例的實施步驟，亦可適用於在受激發光層與半 導體晶片之間形成可透光間隔層（圖未示），例如在製作内 層的受激發光次層421之步驟時，以可透光膠體取代混有 螢光粉的膠體，待可透光膠體固化後即可形成可透光間隔 層，外層的受激發光次層422即可為受激發光層。藉此可 降低螢光粉因處於長時間高溫所產生效率下降與結構不穩 定的問題。 參閱圖12、圖13與圖14,本發明半導體發光元件之 第五較佳實施例，本實施例的實施步驟與第一較佳實施例 201025665 大致相同，惟，本實施例是利用網板使受激發光層52成形 固化。同第一較佳實施例的步驟a)，先測知半導體晶片5 i 的出光強度分佈後，預製適當的網板53，以能成形具有預 設形狀的受激發光層52。如圖12所示，將半導體晶片51 固定於基板54後，再將預製的網板53放置於基板54上的 預定位置。如圖13所示，將混有螢光粉的膠體（圖未標號 )充滿網板53與基板54所界定的空間，並利用刮刀（圖 未示）修飾’使裸露的膠體表面平整，經烘烤使膠體固化 _ 後，形成受激發光層52。如圖14所示，移除網板53而形 成本實施例半導體發光元件5的成品。 前述各實施例的半導體發光元件i'2'3'4'5,其中 的半導體晶片11、21、31、41、51皆可藉由連接一外部電 路（圖未示）控制發光，由於電路封裝非本發明之重點， 本發明所屬技術領域具有通常知識者，可以應用現有封裝 技術或自行調整其電路與半導體晶片 的連接方式。 歸納上述，本發明半導體發光元件1、2、3、4、5，藉 由受激發光層12、22、32、42、52的厚度分佈，來補償半 導體晶片11、2卜31、41、51正向出光亮度與侧向出光亮 度不均勾的缺陷’以增加半導體發光元件1、2、3、4、5 色度的均勻性。此外，還可進一步藉由可透光間隔層降 低受激發光體（例如螢光粉）因處於長時間高溫所產生效 率下降與結構不穩定的問題。而且，亦可藉由覆蓋於受激 發光層12、22、32、42、52上的可透光層23、33、43調 201025665 整光型，使半導體發光元件1、2、3、4、5的光型可以符 合所要運用的產品或系統。 實狭例舆比較例 實驗例1 取基板為藍寶石的藍光半導體晶片，以角度儀測得其 出光強度分佈如圖15所示，測量範圍為±90度Θ角。於該 半導體晶片11上設置含有黃色螢光粉的受激發光層12 (參 閱圖6)，在本實驗例中’半導體晶片η的正向出光強度大 於侧向出光強度，故使受激發光層12的正向厚度121大於❹ 側向厚度122,並使其比例為15,再利用角度儀測量各角 度的色溫（ccn’將所測得的色溫之最大值與最小值相減 即得色溫範圍（CCTRange)為613K。 實驗例2 實驗例2與實驗例1大致相同，惟，使受激發光層12 的正向厚度121與侧向厚度122的比為18，測得的色溫範 圍為253K。 實驗例3 實驗例3與實驗例1大致相同，惟，使受激發光層的 12正向厚度121與侧向厚度122的比為2 3，測得的色溫範 圍為399K。 實驗例4 實驗例 12正向厚度 圍為863K。 4與實驗例1大致相同，惟，使受激發光層的 121㈣向厚度122的比為3,測得的色溫範 10 201025665 比較例 比較例與實驗例1大致相同，惟，受激發光層的形狀 為一般半導體發光元件之螢光膠體的形狀，其測得的色溫 範圍為919K。 將前述各實驗例之受激發光層的正向厚度與側向厚度 比值與色溫範圍的量測值及比較例色溫範圍的量測值整理 如表1所示： 表1 正向厚度/側向厚度之比值 色溫範圍（K) .___實驗例1 1.5 613 __實驗例2 1.8 253 __實驗例3 2.3 399 __f驗例4 3 863 __ 比較例 - 919 由表1可知’實驗例1〜4的色溫範圍值都小於比較例 ’顯示藉由調整受激發光層對應半導體晶片出光強度的厚 度分佈，使對應較強出光區域與較弱出光區域的厚度比在 φ M〜3的範圍内’均可縮小色溫範圍，使色度分佈較為均勻 ’尤其實驗例2及實驗例3，所達到的效果更佳。 常見的半導體晶片有兩種類型，一種為實驗例1〜4所 使用的藍寶石基板（sapphire base )類型，另一種為垂直基 板（vertical base)類型，由於藍寶石基板類型的半導體晶 片出光角度分佈較廣，而垂直基板類型的半導體晶片的出 光角度較集中（更集中於正向），由實驗例丨〜斗的實驗結果 可推測’若半導體晶片採用垂直基板類型時，受激發光層 的對應較強出光區域與較弱出光區域的厚度比值可以再提 11 201025665 间至小於5的範圍内，均具有縮小色溫範圍，使色度 的效果。 惟以上所述者，僅為本發明之較佳實施例而已，當不 能以此限定本發明實施之範圍，即大凡依本發明申請專利 範圍及發明說明内容所作之簡單的等效變化與修飾，皆仍 屬本發明專利涵蓋之範圍内。 【圖式簡單說明】 圖1是一示意圖，說明一習知的半導體發光元件之螢 光粉封裝結構； 圖2是一示意圖，說明另一習知的半導體發光元件之 螢光粉封裝結構； 圖3〜圖6是說明本發明半導體發光元件的第一較佳實 施例及其實施步驟流程的示意圖； 圖7是一說明本發明半導體發光元件的第二較佳實施 例的示意圖； 圖8與圖9是說明本發明半導體發光元件的第三較佳 實施例及其實施步驟流程的示意圖； 圖10與圖11是說明本發明半導體發光元件的第四較佳 實施例及其實施步驟流程的示意圖；及 圖12〜圖14是說明本發明半導體發光元件的第五較佳 實施例及其實施步驟流程的示意圖。 12 201025665[Technical Field] The present invention relates to a semiconductor light-emitting element, and more particularly to a semiconductor light-emitting element having a uniform chromaticity distribution and a method of fabricating the same. [Prior Art] Generally, a semiconductor light-emitting element which is mixed by a fluorescent powder is generally provided with a phosphor powder mixed in a colloid, and a fluorescent colloid mixed with the fluorescent powder is poured into the prior art. In the holder cup of the semiconductor light-emitting chip, after the 0 is cured, the outer layer is covered with a transparent rubber layer to protect it. As shown in Fig. 1, the wafer 91 after the solidification molding is formed, and the phosphor colloid 92 is in a relationship with the transparent adhesive layer 93. Since the central illuminating intensity of the general wafer 91 is strong, and as can be seen from FIG. 1, the fluorescent colloid 92 is formed in a cup (not shown), so that it has a cup shape, so that the light emitted from the wafer 91 at various angles excites the fluorescent light. The path of the powder (contained in the phosphor colloid 92) is inconsistent, leading to a very uneven chromaticity distribution from the solid angles. Another way to arrange the phosphor powder, as shown in Fig. 2, is to uniformly coat the phosphor powder ® 94 on the wafer 95. This type of encapsulation allows the light emitted from the angles of the wafer 95 to illuminate the phosphor powder 94 to have a uniform path, thereby improving the overall light uniformity. However, the commonly used phosphor powder 94 is mostly yellow, and the yellow phosphor powder 94 will have a higher central light temperature than other light exit angles because the forward light field of the semiconductor wafer 95 is stronger than the lateral light field. SUMMARY OF THE INVENTION Accordingly, the present invention provides a semiconductor light-emitting element that adjusts the shape of an excitation light layer (for example, glory body, glory powder) 201025665 according to a light intensity distribution of a semiconductor light-emitting chip, which is compensated by the shape of the excited light layer. The disadvantage of uneven luminous intensity of the wafer is to achieve uniformity of chromaticity. The present invention further provides a semiconductor light-emitting element having a light-transmissive spacer layer between the excitation light layer and the semiconductor wafer, so that it can be excited by the permeable spacer layer in addition to the purpose of uniformity of chromaticity. The optical layer and the semiconductor wafer are used for the purpose of reducing the efficiency of the excited light body (for example, phosphor powder) due to the high temperature for a long period of time and structural instability. The invention further provides a semiconductor light-emitting component further provided with a light-controllable light-permeable layer (for example, a lens or a gel) outside the light-excited light layer, which can achieve the purpose of uniformity of chromaticity, and can also achieve control. The purpose of the optical type is that the semiconductor light emitting device of the present invention comprises: a semiconductor wafer and an excited light layer. The stimulated light layer covers the semiconductor wafer, and the excited light layer has a thicker thickness corresponding to a region where the light-emitting intensity of the semiconductor wafer is stronger, and the thickness of the region corresponding to the weaker light-emitting intensity is thinner, and the excited light layer corresponds to the light-emitting layer. The thickness ratio of the region having a stronger intensity to the thickness corresponding to the region having a weaker light-emitting intensity is greater than 1 and less than 5 (1 < thickness ratio < 5). The thickness distribution of the excited light layer is adjusted in accordance with the light intensity distribution of the semiconductor wafer. Thereby the chromaticity distribution can be made more uniform. Further, the excitation light layer may be uniformly mixed in the knee plaque by an excitable light body such as phosphor powder or phosphor powder, formed by curing of the jig, or directly formed by the excited light body. Moreover, the excitation light layer may include a plurality of layers of excited sub-layers that can be excited to emit different colors of light. For example, the excitation light layer may include two layers of excited sub-layers, which may be a yellow fluorescent colloid layer and a red fluorescent layer, respectively. The pupil layer 201025665' increases the color rendering of the semiconductor light emitting element. Further, the semiconductor light emitting device of the present invention may further comprise a light transmissive spacer layer disposed between the semiconductor wafer and the excited light layer. The permeable spacer layer may be made of a transparent colloid to isolate the excited light layer ′ to reduce the problem of reduced efficiency and structural instability of the excited light body due to prolonged high temperature. In addition, the semiconductor light emitting device of the present invention may further comprise a light transmissive layer covering the excited light layer, such as a lens or a light transmissive colloid, for adjusting the light pattern so that the light pattern of the semiconductor light emitting element can be Compliance with the product or system to be used. The invention further provides a method for fabricating a semiconductor light emitting device, the steps comprising: a) providing a semiconductor wafer and measuring the light intensity distribution thereof; b) determining the shape of an excited light layer according to the light intensity distribution of the semiconductor wafer; The stimulated light layer has a thicker thickness corresponding to a region where the light-emitting intensity of the semiconductor wafer is stronger, and a thickness corresponding to a weaker light-emitting region is thinner, so that the color temperature of each light-emitting angle is uniform, and a jig having the predetermined shape is fabricated; And c) forming an excited light layer on the semiconductor wafer by the fixture. Preferably, the thickness of the region of the excited light corresponding to the region of strong illuminance is greater than the thickness of the region corresponding to the weaker illuminance; And less than 5. The semiconductor light-emitting device of the present invention compensates for the unevenness of the light intensity of the semiconductor wafer by adjusting the thickness distribution of the excitation light layer to increase the uniformity of the chromaticity of the semiconductor light-emitting element. In addition, the problem of reduced efficiency and structural instability of the excited light body due to prolonged high temperature can be further reduced by the permeable 201025665 light spacer layer. Moreover, the light pattern can be adjusted by the light permeable layer overlying the luminescent layer to make the light pattern of the semiconductor light emitting device conform to the product or system to be used. [Embodiment] The detailed description of the five preferred embodiments of the present invention will be apparent from the following description of the preferred embodiments. Referring to Figures 3 to 6, the implementation steps of the first preferred embodiment of the semiconductor light-emitting device of the present invention are as follows: 1) A semiconductor wafer 11 is tested for its light intensity distribution to determine the pre-formed excited light layer.丨 2 shape. η) is a step of forming the excited light layer 12 as shown in FIGS. 3 to 6. In Fig. 3, the semiconductor wafer u is first fixed on a substrate 13. 4 shows a fixture 14 for forming the predetermined shape of the excitation light layer 12 on a predetermined position on the substrate 13. The fixture 14 has a glue inlet 141 and an air outlet 142 for irrigation. Use when using glue. In Fig. 5, the excited light body (not shown) is mixed in a colloid (not shown), and the colloid is contained in a syringe (not shown). The colloid is used to pass the gel from the glue inlet 141 of the jig 14. In the injecting jig 14, the air in the jig 14 can be discharged from the air outlet 142. After the jig is filled with the jig 14, the colloid is solidified by baking to form the excited light layer 12. As shown in Fig. 6, after the colloid is cured, the jig 14 is removed, that is, the finished semiconductor light-emitting element 1 of the present embodiment is 201025665. In the embodiment, the excited light body used is a yellow fluorescent powder, and the colloid used is a plastic powder which can generally mix the fluorescent powder. The method of mixing the fluorescent powder and the colloid has been the technical field of the present invention. Well known, so no longer detailed. Referring to FIG. 7, a second preferred embodiment of the semiconductor light emitting device of the present invention, the implementation steps of the embodiment are substantially the same as those of the first preferred embodiment, but the semiconductor light emitting device 2 of the present embodiment further includes a semiconductor wafer for controlling 21 light type permeable layer 23. The light transmissive layer 23 is a pre-formed lens®, and after the surface of the excitation light layer 22 is solidified, it is sleeved on the excitation light layer 22, and the excitation light layer 22 is coated by light transmissive. The layer 23 adjusts the light pattern so that the light pattern of the semiconductor light emitting element 2 can conform to the product or system to be used. Referring to FIG. 8 and FIG. 9, a third preferred embodiment of the semiconductor light emitting device of the present invention, the implementation steps of the embodiment are substantially the same as those of the first preferred embodiment, but the fixture used in the first preferred embodiment 14 is replaced by a light transmissive layer 33. In other words, in the present embodiment, the light transmissive layer 33 itself is a lens, and the ® can have the function of a jig, and has a glue inlet 331 and an air outlet 332. As shown in FIG. 8, the light-transmitting layer 33 having both the control light type and the fixture function is placed on a predetermined position on the substrate 34, and the colloid mixed with the phosphor powder is used by a syringe (not shown). (not shown) is injected into the permeable layer 33 to fill the permeable layer 33 and cover the semiconductor wafer 31' as shown in FIG. 9, and then solidified by baking to form an excited light layer 32. That is, the finished product of the semiconductor light emitting element 3 of the present embodiment is completed. Referring to FIG. 10 and FIG. 11, a fourth preferred embodiment of the semiconductor light emitting device of the present invention, the semiconductor light emitting device 4 of the present embodiment has two different colors of phosphor powder, so that the excitation light layer 42 has two layers. The excitation sub-layers 421 and 422, wherein the excited sub-layer 421 of the inner layer contains yellow phosphor, and the excited-human layer 422 of the outer layer contains red phosphor, whereby the color rendering of the semiconductor light-emitting element 4 can be increased. The present embodiment also has a light transmissive layer 43 that can control the light type. The implementation steps of this embodiment can be combined with the implementation steps of the first preferred embodiment and the third preferred embodiment. As shown in FIG. 1A, the same implementation steps as the first preferred embodiment are used in the substrate 44 and the semiconductor. An inner layer of the excited light sublayer 421 is formed on the wafer 41, and the pre-formed light-permeable layer 43 is used as a jig according to the same implementation steps as the third preferred embodiment, as shown in FIG. The colloid of the red phosphor is filled with the space between the excited sub-layer 421 containing the yellow phosphor and the permeable layer 43. After baking, the other sub-layer 422 of the excited light is formed, and the implementation is completed. A finished product of the semiconductor light-emitting element 4 is exemplified. The implementation steps of this embodiment may also be applied to form a permeable spacer layer (not shown) between the excitation light layer and the semiconductor wafer, for example, in the step of fabricating the inner layer of the excited light sublayer 421. The light-transmissive colloid replaces the colloid mixed with the phosphor powder, and after the transparent colloid is cured, a light-permeable spacer layer can be formed, and the outer layer of the excited light sub-layer 422 can be an excited light layer. This can reduce the problem of reduced efficiency and structural instability of the phosphor powder due to prolonged high temperatures. Referring to FIG. 12, FIG. 13, and FIG. 14, a fifth preferred embodiment of the semiconductor light emitting device of the present invention, the implementation steps of the embodiment are substantially the same as those of the first preferred embodiment 201025665, but the embodiment uses a stencil The excited light layer 52 is shaped and cured. In the same manner as step a) of the first preferred embodiment, after the light intensity distribution of the semiconductor wafer 5 i is first measured, a suitable screen 53 is prefabricated to form the excited light layer 52 having a predetermined shape. As shown in Fig. 12, after the semiconductor wafer 51 is fixed to the substrate 54, the prefabricated screen 53 is placed on a predetermined position on the substrate 54. As shown in FIG. 13, the colloid (not labeled) mixed with the phosphor powder is filled with the space defined by the stencil 53 and the substrate 54, and is modified by a doctor blade (not shown) to flatten the exposed colloid surface and bake. After baking to cure the colloid, an excited light layer 52 is formed. As shown in Fig. 14, the stencil 53 is removed to form a finished product of the semiconductor light-emitting element 5 of the embodiment. The semiconductor light-emitting elements i'2'3'4'5 of the foregoing embodiments, wherein the semiconductor wafers 11, 21, 31, 41, 51 can be controlled to emit light by connecting an external circuit (not shown) due to the circuit package. Without focusing on the present invention, those skilled in the art can apply existing packaging techniques or adjust the connection of their circuits to semiconductor wafers. In summary, the semiconductor light-emitting elements 1, 2, 3, 4, and 5 of the present invention compensate semiconductor wafers 11, 2, 31, 41, 51 by the thickness distribution of the excitation light layers 12, 22, 32, 42, 52. The defect of the forward light-emitting luminance and the lateral light-emitting luminance unevenness is added to increase the uniformity of the chromaticity of the semiconductor light-emitting elements 1, 2, 3, 4, and 5. Further, the opaque spacer layer can further reduce the problem of reduced efficiency and structural instability of the excited light body (e.g., phosphor powder) due to prolonged high temperature. Moreover, the semiconductor light-emitting elements 1, 2, 3, 4 can also be adjusted by the light-permeable layers 23, 33, 43 covering the excitation light layers 12, 22, 32, 42, 52. The light type of 5 can be adapted to the product or system to be used. Real Example 舆Comparative Example Experimental Example 1 A blue semiconductor wafer with a sapphire substrate was taken, and its light intensity distribution was measured by an angle meter as shown in Fig. 15, and the measurement range was ±90 degrees. An excitation light layer 12 containing yellow phosphor powder is disposed on the semiconductor wafer 11 (see FIG. 6). In the experimental example, the positive light output intensity of the semiconductor wafer η is greater than the lateral light output intensity, so that the excited light layer is provided. The forward thickness 121 of 12 is greater than the lateral thickness 122 of the crucible, and the ratio is 15, and the color temperature of each angle is measured by an angle meter (ccn' subtracts the maximum and minimum values of the measured color temperature to obtain a color temperature range. (CCTRange) was 613 K. Experimental Example 2 Experimental Example 2 was substantially the same as Experimental Example 1, except that the ratio of the forward thickness 121 of the excitation light layer 12 to the lateral thickness 122 was 18, and the measured color temperature range was 253 K. Experimental Example 3 Experimental Example 3 was substantially the same as Experimental Example 1, except that the ratio of the forward thickness 121 of the excited light layer to the lateral thickness 122 was 2 3 and the measured color temperature range was 399 K. Experimental Example 4 Experimental Example 12 The forward thickness is 863 K. 4 is substantially the same as Experimental Example 1, except that the ratio of the 121 (four) to the thickness 122 of the excited light layer is 3, and the measured color temperature is 10 201025665. Comparative Example Comparative Example is the same as Experimental Example 1. However, the shape of the excited light layer is a general semiconductor light The shape of the fluorescent colloid of the element has a measured color temperature range of 919 K. The ratio of the ratio of the forward thickness to the lateral thickness of the excited light layer of each experimental example and the color temperature range and the color temperature range of the comparative example The measured values are summarized in Table 1: Table 1 Ratio of forward thickness/lateral thickness Color temperature range (K) .___Experimental example 1 1.5 613 __Experimental example 2 1.8 253 __Experimental example 3 2.3 399 __f 4 3 863 __ Comparative Example - 919 It can be seen from Table 1 that 'the color temperature range values of the experimental examples 1 to 4 are smaller than the comparative example' show that the thickness distribution corresponding to the light intensity of the semiconductor wafer corresponding to the excitation light layer is adjusted, so that the corresponding strong light exiting region is obtained. The ratio of the thickness to the weaker light-emitting region is in the range of φ M to 3, and the color temperature range can be reduced to make the chromaticity distribution more uniform. In particular, in Experimental Example 2 and Experimental Example 3, the effect achieved is better. Common semiconductor wafers There are two types, one is the sapphire base type used in Experimental Examples 1 to 4, and the other is a vertical base type, which is widely distributed due to the sapphire substrate type semiconductor wafer. The light output angle of the semiconductor wafer of the vertical substrate type is concentrated (more concentrated in the forward direction), and the experimental results of the experimental example can be inferred that if the semiconductor wafer adopts the vertical substrate type, the corresponding light-emitting layer is strongly emitted. The ratio of the thickness of the region to the weaker light-emitting region can be further increased from 11 201025665 to less than 5. Both have the effect of reducing the color temperature range and making the chromaticity. However, the above is only the preferred embodiment of the present invention. The scope of the present invention is not limited by the scope of the invention, and the equivalent equivalents and modifications of the present invention are still within the scope of the invention. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic view showing a conventional phosphorescent package structure of a semiconductor light emitting device; FIG. 2 is a schematic view showing another conventional phosphorescent package structure of a semiconductor light emitting device; 3 to FIG. 6 are schematic views illustrating a flow chart of a first preferred embodiment of the semiconductor light emitting device of the present invention and a step of implementing the same; FIG. 7 is a schematic view showing a second preferred embodiment of the semiconductor light emitting device of the present invention; 9 is a schematic view showing a third preferred embodiment of the semiconductor light emitting device of the present invention and a flow chart of its implementation steps; FIG. 10 and FIG. 11 are schematic diagrams showing a fourth preferred embodiment of the semiconductor light emitting device of the present invention and a flow chart of its implementation steps; And Figs. 12 to 14 are schematic views for explaining a fifth preferred embodiment of the semiconductor light emitting device of the present invention and a flow of the steps of its implementation. 12 201025665
【主要元件符號說明】 1 ....... …半導體發光元件 34…… •…基板 11…… …·半導體晶片 4 ....... •…半導體發光元件 12…… •…受激發光層 41…… •…半導體晶片 121… …正向厚度 42···.· •…受激發光層 122 .··. •…侧向厚度 421… •…受激發光次層 13…… …基板 422… •…受激發光次層 14…… •…治具 43…… •…可透光層 141 ···. …·進膠口 44•.… •…基板 142 ···. …·出氣口 5 ....... •…半導體發光元件 2 ....... …·半導體發光元件 51…… •…半導體晶片 21…… …半導體晶片 52••… •…受激發光層 22…… …·受激發光層 53…… •…網板 23…… •…可透光層 54·.··. •…基板 3 ....... …半導體發光元件 91…… • BB片 31…… …·半導體晶片 92·.··. •…螢光膠體 32…… …·受激發光層 93…… •…透明膠層 33…… …可透光層 94••… •…螢光粉 331 ···· …·進膠口 95"… …日日片 332 …. …·出氣口 13[Description of Main Element Symbols] 1. Semiconductor light-emitting element 34............substrate 11.........Semiconductor wafer 4.....................Semiconductor light-emitting element 12... Excitation light layer 41...•...Semiconductor wafer 121...forward thickness 42······...excited light layer 122.···.... lateral thickness 421... •...excited light sublayer 13... ...substrate 422...•...excited light sublayer 14...•...judge 43...•...translucent layer 141 ···....·inlet port 44•....•...substrate 142 ···. ... ·Outlet port 5 ....... •...Semiconductor light-emitting element 2 . . . . semiconductor light-emitting element 51 ..... semiconductor wafer 21 ... semiconductor wafer 52 ••... The light layer 22 is ... the light-receiving layer 53 ... • the screen 23 ... • the light-transmissive layer 54 · ·····... the substrate 3 .... ... • BB sheet 31... ...·Semiconductor wafer 92····.•...Fluorescent colloid 32...··Excited light layer 93...•...Transparent adhesive layer 33... 94 •• ... • ... ???? ... · fluorescent powder 331 into the plastic mouth 95 " ... ... ... ... 332 day film-air outlet 13.