201025519 P51970121TW 29474twf.doc/d 六、發明說明： 【發明所屬之技術領域】 本發明是有關於一種密封接合結構，且特別是有關於一種 同時達到元件密封及封裝效果的密封接合結構及其製程。 【先前技術】 綜觀醫療電子產品的發展趨勢’植入式（implantable)微 型封裝元件及生物相容性（biocompatibility)技術扮演相當重要 參 的角色，若無法達到生物相容性及密封性的要求，對植入微型 封裝元件的人體或動物而言，體液的侵蝕、降解或肌肉組織的 活動所產生的破壞而使有毒物質侵入活體内，將有相當大的危 險性。 在採用鈦金屬蓋（titanium can)的生醫電子封裝元件中， 以多層陶瓷基板的電極將訊號導通至外部。此多層陶竟基板的 製作是採用低溫共燒陶瓷（LTCC，Low-Temperature Cofired Ceramics)技術，以金、銀、銅等低阻抗金屬做為電極，再使 用平版印刷來塗佈電路，最後在攝氏850度到900度中燒結而 參形成一整合式陶瓷元件，並將此整合式陶瓷元件裝入於鈦金屬 蓋的一氣閉密封空間中，而完成密封的製程。 近年來，為了達到微型化的要求，採用半導體積體電路製 程及封裝技術，可製作出各式各樣的微型封裝元件，其以石夕晶 片、玻璃或高分子聚合物為基材，並結合微機電技術與生物醫 學技術，設計及製作具有微小化、快速、平行處理能力的生物 及醫療用檢測元件’例如基因晶片、蛋白質晶片、檢體處理晶 片及生物感測晶片等’充分運用分子生物學、分析化學、生化 反應等原理，在微小面積上快速進行大量生化感測或反應。 201025519 P51970121TW 29474twf.doc/d 此外，對於心律調整器（pacemaker )、神經刺激养 (neurostimulator)或血糖監測器（bl〇〇dgluc〇sem〇nit〇r)等植 入式微型雜元件而言，為了避免有毒物f侵人活體内，密封 材料及封裝可靠度在安全上扮演著非常重要的角色。 【發明内容】 本發明提出-種元件密封接合結構，用以將一元件封裝於 -基板上，該元件密封結合結構包括—緩衝凸塊層、多個導 封接合部。緩衝凸塊層配置於該树與該基板 鲁t間，錢衝凸塊層包括多個第一部分以及一第二部分，且該 ^部分環繞於該些第—部分的外圍。多個導電接合部電性連 之間’其中各個導電接合部包括覆蓋於各 的—第—電極以及該基板上的一第二電極，且各該 .電接第二電極電性連接。密封接合部環繞於該轉 ==，該密封接合部包括該基板上的-接合環= 成；^接合’以使該71件與該基板之間形 本發明提出一種元件密封接合製程。首先提供 • ί的基材;形成-緩衝層於該元件上;圖宰化 於各該第，上電極 =該基板上，其中各該第一電極對應=;卜圍電= 合，板=㈣密=二部分相互接 u提出-種元件密封接合結構，用以將—元件封裝於 4 201025519 P51970121TW 29474twf.d〇c/d 基板上，該元件密封結合結構包括—緩 接合部以及—密封接合部。緩衝凸塊層配置$層、多個導電 之間’該元件具有錢接墊，而魏衝凸基板 分，且該環狀部分環繞於該些接墊的外圍。^^有一環狀部 性連接於該元件與該基板之間，其中各個 2電接合部電 件上電性連接各該接塾的一金屬凸塊以部包括該元 電極，且各該金屬凸塊與各該第二電極電性^ j的一第二 環繞於該些導電接合部的外圍，該密封接合部包 一接合環，且婦合環與該環狀部分相互接合=板上的 該基板之間形成一密封空間。 ^70件與 、本發明提出-種元件密封接合製程。首先，提供 成-兀件的基材，該元件具有多個接墊；形成—緩衝層於/ 件上；圖案化該緩衝層’以形成具有一環狀部分的‘衝：： 層’其中該環狀部分環繞於該些接塾的外圍；形成多個金 塊於該元件上’且各該金屬凸塊與各該接塾電性連接；提^ 基板，該基板形成有多個第二電極以及一接合環該 ^ 繞於該些第二電極的外圍。配置該元件於該基板上，其^ 金屬凸塊對應於各該第二電極並與各該第二電極電性連δ 該接合環對應與該環狀部分相互接合，以使該元件與該美且 間形成一密封空間。 t 為讓本發明之上述特徵和優點能更明顯易懂，下文特舉 施例，並配合所附圖式作詳細說明如下。 牛 【實施方式】 圖1A及圖1B為本發明二實施例之元件密封接合結構的 剖面示意圖。圖2A〜圖2E為圖1A之元件密封接合結構的製 5 201025519 . P5I9/UI211W 29474twf.doc/d 作方法的流程示意圖。 "月 > 考圖1A’元件毯、封接合結構包括一緩衝凸塊層 no、多辦電接合部⑽以及—密封接合部 130。其中，緩 衝凸^層110例如以圖案化的製程形成多個第一部分偷以 及％繞於這些第一部分110a的外圍的第二部分110b (環狀 部$)。緩衝凸塊層110的材質可為高分子材料的聚合物例 如是環氧樹脂或聚酿亞胺樹脂等，其作法是將高分子材料塗佈 在預定形成7G件1G G的基材（例如是料圓）上，再進行曝光、 顯影製程或光钕刻、乾姓刻等製程，以使高分子材料形成預定 的圖案（多個第-部分l10a以及環繞於這些第一部分⑽的 外圍的第二部分ll〇b)。 ❹ 有關緩衝凸塊層110的圖案化製程及詳細的結構，請參考 圖2A〜圖2D。首先’ S供一基材|，例如是半導體基材，用 以形成一個或多個積體電路元件1〇〇 (僅繪示其一），此元件 100具有一主動表面100S以及—保護層100P，而接墊1〇2(僅 I會不其-）配置於主絲面卿8上，且保護層膽覆蓋主動 表面ioos並顯露出接墊1〇2。接著，請參考圖2B及圖％， 以濺鍍或蒸鍍方式全面性職—金屬層刚於保制ι〇〇ρ以 及，墊1〇2上’並形成-緩衝材料11〇，（高分子材料或感光型 的局分子材料）於元件1〇〇上。接著，請參考圖2D，圖案化 緩衝材料11G’，例如歧行曝光、顯影製程或光侧、乾侧 製程，以形成包括多個第-部分11Ga (僅緣示其以及一 第二部分110b的緩衝凸塊層110 ’其中第二部分n〇b環繞於 這些第-部分110a的外圍’因此，第二部分ll〇b也就是將多 個第-部分110a完整包覆於其中的一環狀凸起結構同時且 有緩衝及密封的功效。之後’請參相2E，以讀或蒸鑛的 6 201025519 P51970121TW 29474twf.doc/d 方式形成一第一電極SI rAJbf·哲a丨 隻卹八11Λ以 匕、材貝例如為銅、鋁或金）於各個 苐ϋ 110a上（例如覆蓋第—部分⑽ 固 經職刻之後成為凸塊底金屬層^iit 盍於各個第一部份i 10a的第一電極S1電性連接。 ”復 、首ίί^Γ，這些第—部分11Ga與第二部分·以同 二j 併完成，以減少製程的步驟，並使後續的密 封製程以及元件封裝步驟能同時進行。此外，這些第 二部分mb之間例如以餘刻形成一間距，使兩者i ❿:構ϋ互分離。但在另—實_巾mm2 =了ρ刀膽之間在結構上相互連接，同樣具有緩衝ς 的功效。 j 如圖1B所示的另-實施例，元件密封接合結構ι〇〇2包 括-緩衝凸塊層110、多個導電接合部12〇以及一密封接合部 請。其中’缓衝凸塊層11G例如以圖案化的製程形成多二第 —部分110a以及一環繞於這些第—部分11〇&的外圍的第二邻 分η%。有關緩衝凸塊層110的製作方法請參考圖2A〜圖2°d 的步驟’在此不再詳述。本實施例與圖1A的元件密封結合结 φ構及圖2A〜圖2D的製程不同的是，這些第一部分 二部分㈣之間具有-第三部分（連接部）聰，且在 相互，接為一體（材質相同），未經由蝕刻而形成間距，故能 加強赉封的接合強度，並同時達到元件密封及封裝的效果。 接著，請參考圖1A及圖1B，導電接合部12〇電性連接 於元件100與基板140 (例如是印刷電路板）之間，用以將電 訊號經由基板14〇輸入到元件1〇〇或經由基板14〇輸出到外 部，而各個導電接合部120包括覆蓋於各個第一部分n〇a的 —第—電極S1以及基板140上的一第二電極82，且各個第一 7 201025519 丄 1 29474twf.doc/d 電極S1與各個第二電極幻 金合金或鈦鶴合金）電性連接胃〜黏著金屬層H1 (鎳 這些導電接合部12G料目。密if封接合部13G環繞於 的-接合環R1 (其材質包括基板⑽上 二電極S2的賴，且接合環二、錢金、），環繞於，第 二黏著金屬層H2(鎳金合金或鈦鎮二刀U°:例如，由第 層H3 (鎳金合金或鈦鶴合金^互二人以及第二黏著金屬 摄，以#开杜刚㈣二 接合而形成一氣閉密封結 構以使兀件1〇〇與基板140之間形成一密封空間c。 ❿ 上^ 一實施例中’第—黏著金屬層H1例如以賤鍍或 祕的方式形狀各個第—電極S1上（參㈣ : 黏著金屬層H2(可與第—電極S1同—道步驟形成） 黏著金屬層H3例如分別形成於第二部分腿以及接切弟幻 上，而當元件崎於基板14Q上時，更可進行—熱壓合步 驟，以使各個第-黏者金屬層H1電性接合於各個第—電極s! 與各個第二電極S2之間，而第二黏著金屬層H2與第三 金屬層H3緊密地接合（共晶接合）於接合環幻與第二部分 110b之間’以加強密封的接合強度^但第—黏著金屬層H1、 ❹ 第二黏著金屬層m與第三黏著金屬層HS僅為本發明的實施 例，並非用以限制本發明。 圖一3八及圖；3B為本發明另二實施例之元件密封接合結構 的剖面示意圖。請參考圖3A及圖3B，此元件密封接合結構 1003、1004用以將一元件100封裝於一基板15〇 (例如是軟性 電路板）上，而基板150的第一表面上除了具有多個第二電極 S2以及一接合環R1之外，基板15〇的第二表面更包括多個第 三電極S3。這些第三電極S3通過基板15〇的導通孔152分別 與這些第二電極S2電性連接。此外，各個第三電極S3上更包 8 201025519 P51970121TW 29474twf.doc/d 括—神經刺激電極S4 (或導電貼片），可用於經皮電神經刺 激器（TENS，Transcutaneous Electro Nerve Stimulat〇r)中各個 神輕刺激電極S4可經由其尖端放電，以提供電治療或肌肉復 健所需的刺激電流。 另外，圖4A及圖4B為本發明另二實施例之元件密封接 合結構的剖面示意圖，其中圖4A為具有生物相容性塗層17〇 的兀*件密封接合結構1005的剖面示意圖，而圖4B為堆最型封 裝的元件密封接合結構1006的剖面示意圖。請先參考^4a，201025519 P51970121TW 29474twf.doc/d VI. Description of the Invention: [Technical Field] The present invention relates to a sealing joint structure, and more particularly to a sealing joint structure and a process for simultaneously achieving element sealing and packaging effects. [Prior Art] Looking at the development trend of medical electronic products 'implantable micro-package components and biocompatibility technology play a very important role, if the biocompatibility and sealing requirements are not met, For human or animal implanted with micro-package components, the erosion of body fluids, degradation or damage caused by the activity of muscle tissue will invade the living body with toxic substances, which is quite dangerous. In a biomedical electronic package in which a titanium can is used, the electrodes of the multilayer ceramic substrate conduct signals to the outside. The multi-layer ceramic substrate is made by using Low-Temperature Cofired Ceramics (LTCC) technology, using low-impedance metals such as gold, silver, and copper as electrodes, and then using lithography to coat the circuit, and finally in Celsius. The integrated ceramic component is formed by sintering in 850 to 900 degrees, and the integrated ceramic component is placed in a gas-tight sealed space of the titanium metal cover to complete the sealing process. In recent years, in order to meet the requirements of miniaturization, a variety of micro-package components can be fabricated by using a semiconductor integrated circuit process and packaging technology, which is based on a stone wafer, glass or polymer, and combined. Micro-electromechanical technology and biomedical technology, design and manufacture of biological and medical detection components such as gene chips, protein wafers, sample processing wafers and biosensing wafers with miniaturization, rapid and parallel processing capabilities, etc. The principles of learning, analytical chemistry, and biochemical reactions quickly perform a large number of biochemical sensing or reactions on a small area. 201025519 P51970121TW 29474twf.doc/d In addition, for implantable micro-hybrid components such as pacemaker, neurostimulator or blood glucose monitor (bl〇〇dgluc〇sem〇nit〇r), To avoid toxic substances invading the body, sealing materials and packaging reliability play a very important role in safety. SUMMARY OF THE INVENTION The present invention provides an element sealing joint structure for encapsulating an element on a substrate, the element sealing bonding structure including a buffer bump layer and a plurality of sealing joints. The buffer bump layer is disposed between the tree and the substrate, and the bump layer comprises a plurality of first portions and a second portion, and the ^ portion surrounds the periphery of the first portions. The plurality of conductive joints are electrically connected to each other, wherein each of the conductive joints includes a first electrode covering each of the first electrodes and a second electrode on the substrate, and each of the second electrodes is electrically connected. The sealing joint surrounds the rotation ==, and the sealing joint includes a joint ring on the substrate to form a joint between the 71 member and the substrate. The present invention proposes an element sealing joint process. First, a substrate is provided; a buffer layer is formed on the device; a pattern is applied to each of the electrodes, and an upper electrode=the substrate, wherein each of the first electrodes corresponds to a corresponding one; The two components are connected to each other to form a component sealing joint structure for encapsulating the component on a substrate of 4 201025519 P51970121TW 29474twf.d〇c/d, the component sealing bonding structure including a slow joint portion and a sealing joint portion . The buffer bump layer is disposed between the layer and the plurality of conductive layers. The element has a money pad, and the Wei punches the substrate, and the annular portion surrounds the periphery of the pads. An annular portion is connected between the component and the substrate, wherein each of the two electrical junction portions is electrically connected to a metal bump of each of the interfaces, and the metal bump is partially included. a second portion of the block and each of the second electrode electrodes surrounds the periphery of the conductive joints, the seal joint portion includes an engagement ring, and the mating ring and the annular portion are coupled to each other A sealed space is formed between the substrates. ^70 pieces and the present invention propose a kind of component sealing and bonding process. First, a substrate is provided, which has a plurality of pads; a buffer layer is formed on the device; the buffer layer is patterned to form a 'punch: layer' having an annular portion. An annular portion surrounds the periphery of the plurality of contacts; a plurality of gold bumps are formed on the component and each of the metal bumps is electrically connected to each of the contacts; and the substrate is formed, the substrate is formed with a plurality of second electrodes and A bonding ring surrounds the periphery of the second electrodes. Configuring the component on the substrate, the metal bump corresponding to each of the second electrodes and electrically connected to each of the second electrodes δ, the bonding ring correspondingly and the annular portion are joined to each other, so that the component and the beauty And a sealed space is formed. The above described features and advantages of the present invention will become more apparent from the following detailed description of the appended claims. [Embodiment] Figs. 1A and 1B are schematic cross-sectional views showing a component sealing joint structure according to a second embodiment of the present invention. 2A to FIG. 2E are schematic diagrams showing the process of the method for manufacturing the component sealing joint structure of FIG. 1A, which is made by the method of the method of 2010-0519. P5I9/UI211W 29474twf.doc/d. "Month> The Fig. 1A' component carpet and seal joint structure includes a buffer bump layer no, a plurality of electrical joints (10), and a seal joint 130. The buffering layer 110 forms, for example, a plurality of first portions and a second portion 110b (annular portion) around the periphery of the first portions 110a by a patterning process. The material of the buffer bump layer 110 may be a polymer material such as an epoxy resin or a polyimide resin, etc., by coating the polymer material on a substrate which is intended to form a 7G piece of 1G G (for example, On the material circle, a process of exposing, developing, or engraving, dry etching, etc. is performed to form a predetermined pattern of the polymer material (a plurality of first portions 110a and a second surrounding the periphery of the first portions (10) Part ll〇b). ❹ For the patterning process and detailed structure of the buffer bump layer 110, please refer to FIG. 2A to FIG. 2D. First, 'S for a substrate|, for example, a semiconductor substrate, for forming one or more integrated circuit elements 1 (only one of which is shown), the element 100 has an active surface 100S and a protective layer 100P And the pad 1〇2 (only I will not) is disposed on the main wire surface 8 and the protective layer covers the active surface ioos and reveals the pad 1〇2. Next, please refer to FIG. 2B and FIG. 2, in a sputtering or vapor deposition manner, the full-featured metal layer is just under the protection of ι〇〇ρ and the pad 1〇2 and forms a buffer material 11〇, (polymer material) Or a photosensitive type of molecular material) on the element 1〇〇. Next, referring to FIG. 2D, the buffer material 11G' is patterned, such as a differential exposure, a development process, or a light side, dry side process to form a plurality of first portions 11Ga (only the edge portion and the second portion 110b are formed). The buffer bump layer 110' wherein the second portion n〇b surrounds the periphery of the first portion 110a. Therefore, the second portion 11b is an annular convex in which the plurality of first portions 110a are completely covered. At the same time, the structure has the function of buffering and sealing. After that, please refer to phase 2E to read or steam the ore 6 201025519 P51970121TW 29474twf.doc/d way to form a first electrode SI rAJbf·zhe a丨 shirt eight 11Λ , the material shell is, for example, copper, aluminum or gold) on each of the crucibles 110a (for example, after covering the first portion (10), the first electrode of the bump bottom metal layer ^iit is applied to each of the first portions i 10a S1 is electrically connected. The first part 11Ga and the second part are completed in the same way to reduce the process steps, and the subsequent sealing process and component packaging steps can be performed simultaneously. In addition, between these second parts mb, for example The remaining moment forms a spacing so that the two i: ϋ ϋ ϋ 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 In another embodiment, the component sealing joint structure ι 2 includes a buffer bump layer 110, a plurality of conductive joints 12A, and a sealing joint. The 'buffer bump layer 11G is patterned, for example. The process forms a plurality of second portions 110a and a second neighboring portion η% surrounding the periphery of the first portions 11 〇 & the method for fabricating the buffer bump layer 110 is as described in the steps of FIG. 2A to FIG. 'It is not described in detail here. This embodiment differs from the process of the element sealing joint structure of FIG. 1A and the process of FIGS. 2A to 2D in that the first part two parts (four) have a - third part (connection portion). Cong, and they are connected to each other (the same material), and the gap is not formed by etching, so the bonding strength of the sealing can be enhanced, and the effect of component sealing and packaging can be achieved at the same time. Next, please refer to FIG. 1A and FIG. 1B. The conductive joint 12 is electrically connected to the component 100 and the substrate 140 ( Between the printed circuit boards, the electrical signals are input to the component 1 through the substrate 14A or output to the outside via the substrate 14, and the respective conductive joints 120 include the first portion n〇a. - an electrode S1 and a second electrode 82 on the substrate 140, and each of the first 7 201025519 丄 1 29474twf.doc / d electrode S1 and each of the second electrode magic gold alloy or titanium alloy) electrically connected to the stomach ~ adhesive metal layer H1 (nickel such as the conductive joint portion 12G. The outer joint seal portion 13G is surrounded by the joint ring R1 (the material of which includes the two electrodes S2 on the substrate (10), and the joint ring 2, the money,), surrounds, The second adhesive metal layer H2 (nickel gold alloy or titanium two-knife U°: for example, by the first layer H3 (nickel gold alloy or titanium crane alloy ^ two people and the second adhesive metal, to #开杜刚(四)二Engaging to form a hermetic sealing structure to form a sealed space c between the jaws 1 and the substrate 140. In the first embodiment, the first-adhesive metal layer H1 is formed on each of the first electrodes S1 by, for example, enamel plating or secret (parameter (4): adhesive metal layer H2 (which can be formed in the same step as the first electrode S1) The adhesive metal layer H3 is formed, for example, on the second portion of the leg and the cutting edge, respectively, and when the component is on the substrate 14Q, the thermocompression bonding step can be performed to make the respective first-adhesive metal layer H1 electrically. Bonded between each of the first electrodes s! and each of the second electrodes S2, and the second adhesive metal layer H2 and the third metal layer H3 are tightly bonded (eutectic bonding) between the joint ring and the second portion 110b' Bonding strength to strengthen the seal ^but the first-adhesive metal layer H1, the second adhesive metal layer m and the third adhesive metal layer HS are only embodiments of the present invention, and are not intended to limit the present invention. 3B is a schematic cross-sectional view of a component sealing joint structure according to another embodiment of the present invention. Referring to FIG. 3A and FIG. 3B, the component sealing joint structure 1003, 1004 is used to package an element 100 on a substrate 15 (for example, soft). Circuit board), while the first table of the substrate 150 In addition to having a plurality of second electrodes S2 and a bonding ring R1, the second surface of the substrate 15A further includes a plurality of third electrodes S3. These third electrodes S3 pass through the via holes 152 of the substrate 15A, respectively. The two electrodes S2 are electrically connected. In addition, each of the third electrodes S3 is further provided with 8 201025519 P51970121TW 29474twf.doc/d, including a nerve stimulation electrode S4 (or a conductive patch), which can be used for transcutaneous electrical nerve stimulator (TENS, Transcutaneous). Each of the Shenshen light stimulating electrodes S4 in Electro Nerve Stimulat〇r) can be discharged through its tip to provide a stimulation current required for electrical therapy or muscle rehabilitation. In addition, FIG. 4A and FIG. 4B are component seals of another embodiment of the present invention. FIG. 4A is a schematic cross-sectional view of a 密封*-piece sealing joint structure 1005 having a biocompatible coating, and FIG. 4B is a cross-sectional view of the stack-most-packaged component sealing joint structure 1006. First refer to ^4a,
以心律調整器、神經刺激器或血糖監測器等植入式生醫元件為 例，此元件密封接合結構1〇〇5用以將元件1〇〇 (例如單晶片、 =)封裝於-基板15G上，而基板15〇可藉由多個導電體 歹i如鮮球）與一承載器⑽的接整162電性連接，以將訊 =專遞到活體的外部，且基板15G上更包括—生物相容性塗声 17〇 (例如切科無雜冑分讨合物）’純蓋於元件^ 的周圍’除了加強元件100的覆蓋率及密封性 的組織產生危$。 對活體 B曰 用以堆疊型封裝的猶贿接合結構_ 各個元件刚（例如植人式生s元件或其制途 H)封餘各個基板15G上，以形成堆疊型多日日日片封裝^ 一蕾/、中第一元件1〇〇a的第一電極S1與第一基板150a的第 一電極S2電性連接，接著第一基板15〇a的第三電極奶 ^固，體S5 (例如財）及穿過第二元件祕的多個= 牙6與第二元件麵的金屬接墊1〇2電性 (例“第—基板％的第三電極S3經由多個導電體S5 干球）與承載器160的接塾162電性連接，以將訊號傳 9 201025519 P51970121TW 29474twf.doc/d 到外部。如同圖4A所述，各個基板150上更包括-生物相容 性塗層170 (例如是石夕膠等無毒性高分子聚合物），其覆蓋於 各個元件100的周圍，除了力口強各個元件咖#覆蓋率及密封 性’更不會對活體的_產生危害。當然，生物相容性塗層 170亦可以其他高分子塗層（例如環氣樹脂）取代’並非用以 限制本發明。 再者，圖5A及圖5B為本發明另二實施例之元件密封接 合結構的剖面示意圖。請參考圖5A及圖5B，此元件密封接合 ❼結構1007、1008用以將一元件1〇〇封裝於一基板14〇、15〇上， 而基板140、150的第一表面上具有多個第二電極S1以及一接 合裱11卜此外，基板15〇的第二表面更包括多個第三電極幻。 各個第二電極S3通過基板150的導通孔152分別與各個第二 電極S2電性連接。此外，在圖5B中，各個第三電極％上更 包括二神經刺激電極S4 (或導電貼片），可用於經皮電神經 刺激器（TENS)中。各個神經刺激電極S4可經由其尖端放電， 以提供電治療或肌肉復健所需的刺激電流。然而，圖5A及圖 5B的實施例與上述二實施例（參見圖1A、3A)不同的是，緩 參衝凸塊層110的第一部分ll〇a不是經由凸塊底金屬層1〇牝形 成在接墊102的上方，而是形成在接墊1〇2附近的保護層上， 接著再經由濺鍍或蒸鍍的方式形成第一電極S1於各個接墊 102與各個第一部分ii〇a之間（例如覆蓋各個接墊1〇2與各 個第一部分ll〇a的側壁及上表面），以使各個接墊1〇2藉由 各個第一電極S1與各個第二電極S2電性連接。 有關圖5A及圖5B的緩衝凸塊層no的製程與上述的圖 2D及圖2E的緩衝凸塊層110的製程類似，不同之處在於省略 圖2B的凸塊底金屬層1〇4的製程，且於圖案化緩衝凸塊層n〇 201025519 P51970121TW 29474twf.d〇c/d 2個鍍或蒸鍍的方式形成—第―電極si，以電性連 =:=1〇2。因此，緩衝凸塊層11〇的第一部分 =置不^U錄接塾102的上方，亦可經由重佈線的第—電極 S1在内侧延伸，以適合不同需求的接點設計。 ’圖-6A及圖6B為本發明另二實施例之元件密封接 ，的剖面示意圖。請參考圖6A及圖6B，元件密封接合結 構1009、1010包括一緩衝凸塊層11〇、多個導電接合部⑽ 以及一密封接合部13G。其中，緩衝凸塊層no是以高分子材 料的聚合物來製作環狀部分11〇d (圖όΒ中），並採用導電材 質來製作多個金屬凸塊S3 (取代原先的第—部分nGa)，且 金屬凸塊S3可藉由凸塊底金屬層1〇4a與各個接墊ι〇2電性連 接’以使第-電極S1、金屬凸塊S3以及第二電極S2構成一 具有電性連接功能的導電接合部12〇，而環繞於這些金屬凸塊 S3周圍的環狀部分11〇d與密封接合部13〇接合，同時具有密 封及緩衝的功效，以使元件1〇〇與基板14〇之間形成一密封空 間C。 有關圖6A及圖6B的金屬凸塊S3的製程與上述的圖2D 及圖2E的缓衝凸塊層11〇的製程類似，不同之處在於以電鍍 方式形成金屬凸塊S3於接墊102上，且於形成金屬凸塊S3 之後，再以濺鍍或蒸鍍的方式形成一第一電極S1，以覆蓋各 個金屬凸塊S3。 在本實施例中’上述的金屬凸塊S3的材質若為金時，可 直接藉由第一黏著金屬層H1與第二電極S2電性連接，而不 需先形成第一電極S1於金屬凸塊S3上。另外，金屬凸塊S3 之材質若為銅或銅合金時，可藉由金屬凸塊S3上的第一電極 S1做為抗氧化層（例如鎳/金層），以避免銅表面的氧化。 11 201025519 FMy/UUllW 29474twf.doc/d 综上所述，本發明提出多種元件密封接合結構及其製程， 可應用在各式各樣的微型封裝元件上，例如基因晶片、蛋白質 晶片、檢體處理晶片及生物感測晶片等，或者是植入式生醫元 件卜除了藉由緩衝凸塊層來加強密_的接合強度，更可同時 達到元件松封及封裝的效果，避免有毒物質侵入活體内。此 外，緩衝凸塊層以同一道圖案化製程完成，不需額外製作多個 光^及進行多道光罩製程，以減少製程的步驟，並使後續的密 封製程以及元件封裝步雜㈣進行，㈣簡化元件密封及封 粵裝製程及降低生產成本。 曰雖然本發明已以實施例揭露如上，然其並非用以限定本發 ^ ’任何所屬技術領域中具有通常知識者，在不脫離本發明之 月砷和範圍内，當可作些許之更動與潤飾，故本發 圍當視後附之申請專利範圍所界定者為準。月之⑽乾 【圖式簡單說明】 圖1A及圖1B為本發明二實施例之元件密封接合结構 剖面示意圖。 © 目2A〜圖2E為圖1A之元件密封接合結構的製作方法的 k程示意圖。 圖3A及圖3B為本發明另二實施例之元件密封接合結構 的剖面示意圖。 圖4A及圖4B為本發明另二實施例之元件密封接合結構 的剖面示意圖。 圖5A及圖5B為本發明另二實施例之元件密封接合結構 的剖面示意圖。 圖6A及圖6B為本發明另二實施例之元件密封接合結構 12 201025519 rjiy/uiziiv/ 29474twf.doc/d 的剖面示意圖。 【主要元件符號說明】 1001〜1010 :元件密封接合結構 100 :元件 100S :主動表面 100P :保護層 102 :接墊 1Ό4 :金屬層 104a:凸塊底金屬層 • 110’ ：缓衝材料 110 :缓衝凸塊層 110a :第一部分 110b :第二部分 110c :第三部分 110d :環狀部分 120 :導電接合部 130 :密封接合部 _ 140 :基板 W :基材 51 :第一電極 52 :第二電極 53 :金屬凸塊 H1 :第一黏著金屬層 H2 :第二黏著金屬層 H3 :第三黏著金屬層 R1 :接合環 13 201025519 /υιζι l W 29474twf.doc/d c:密封空間 150 :基板 152 :導通孔 53 :第三電極 54 :神經刺激電極 160 :承載器 162 :接墊 170 :生物相容性塗層 100a :第一元件 ❿ 150a:第一基板 100b :第二元件 150b :第二基板 14Taking an implantable biomedical component such as a heart rate adjuster, a neurostimulator or a blood glucose monitor as an example, the component sealing joint structure 1〇〇5 is used to package the component 1〇〇 (for example, a single wafer, =) on the substrate 15G. The substrate 15 can be electrically connected to the connector 162 of a carrier (10) by a plurality of electrical conductors, such as fresh balls, to transmit the message to the outside of the living body, and the substrate 15G further includes a biological body. Compatible smear 17 〇 (for example, Cecco no scorpion sub-composition) 'pure cover around the component ^' in addition to the organization of the coverage and sealing of the reinforcing element 100 is at risk #. The living body B曰 is used for stacking type packaging. Each element is just sealed (for example, implanted s element or its manufacturing path H) on each substrate 15G to form a stacked multi-day solar package. The first electrode S1 of the first rib 1a is electrically connected to the first electrode S2 of the first substrate 150a, and then the third electrode of the first substrate 15A is solidified, the body S5 (for example And the plurality of metal elements that pass through the second component are replaced by the metal pads of the second component surface. (Example "the third electrode S3 of the first substrate % is dried by the plurality of conductors S5") The interface 162 of the carrier 160 is electrically connected to transmit the signal 9 201025519 P51970121TW 29474twf.doc / d to the outside. As shown in FIG. 4A, each substrate 150 further includes a biocompatible coating 170 (for example, A non-toxic high-molecular polymer such as Shi Xijiao, which covers the periphery of each component 100, except that the strength of each component is not harmful to the living body. Of course, biocompatible The coating 170 can also be replaced by other polymer coatings (such as epoxy resin), not for limiting 5A and 5B are cross-sectional views showing a component sealing joint structure according to another embodiment of the present invention. Referring to FIG. 5A and FIG. 5B, the component sealing joint structure 1007, 1008 is used to connect a component. The first surface of the substrate 140, 150 has a plurality of second electrodes S1 and a bonding electrode 11 . Further, the second surface of the substrate 15 further includes a plurality of third surfaces. Each of the second electrodes S3 is electrically connected to each of the second electrodes S2 through the via holes 152 of the substrate 150. Further, in FIG. 5B, each of the third electrodes % further includes two nerve stimulation electrodes S4 (or conductive stickers). Tablets can be used in transcutaneous electrical nerve stimulators (TENS). Each nerve stimulating electrode S4 can be discharged via its tip to provide the stimulation current required for electrical therapy or muscle rehabilitation. However, the implementation of Figures 5A and 5B The difference from the above two embodiments (see FIGS. 1A and 3A ) is that the first portion 11 〇 a of the retarding bump layer 110 is not formed over the pad 102 via the bump bottom metal layer 1 , but a protective layer formed near the pad 1〇2 Then, the first electrode S1 is formed between each of the pads 102 and each of the first portions ii 〇a by sputtering or evaporation (for example, covering the sidewalls of the respective pads 1 〇 2 and the respective first portions 11 〇 a and The surface of each of the pads 1 〇 2 is electrically connected to each of the second electrodes S 2 . The process of the buffer bump layer no of FIGS. 5A and 5B is the same as that of FIG. 2D and FIG. 2E described above. The process of the buffer bump layer 110 is similar, except that the process of the bump bottom metal layer 1〇4 of FIG. 2B is omitted, and the patterned buffer bump layer is n〇201025519 P51970121TW 29474twf.d〇c/d 2 The plating or vapor deposition method forms the first electrode Si, which is electrically connected ===1〇2. Therefore, the first portion of the buffer bump layer 11 is disposed above the recording port 102, and may also be extended inside via the re-wiring first electrode S1 to suit the contact design of different requirements. Fig. 6A and Fig. 6B are schematic cross-sectional views showing the sealing of the components of the second embodiment of the present invention. Referring to Figures 6A and 6B, the component sealing bonded structures 1009, 1010 include a buffer bump layer 11A, a plurality of conductive joints (10), and a sealing joint 13G. The buffer bump layer no is made of a polymer material to form a ring portion 11〇d (in the figure), and a conductive material is used to form a plurality of metal bumps S3 (instead of the original first portion nGa). And the metal bumps S3 can be electrically connected to the respective pads ι 2 by the bump bottom metal layer 1 〇 4a to make the first electrode S1, the metal bump S3 and the second electrode S2 form an electrical connection. The functional conductive joint 12 is engaged, and the annular portion 11〇d surrounding the metal bumps S3 is engaged with the sealing joint 13〇, and has the functions of sealing and buffering so that the element 1〇〇 and the substrate 14〇 A sealed space C is formed between them. The process of the metal bumps S3 of FIG. 6A and FIG. 6B is similar to the process of the buffer bump layer 11A of FIG. 2D and FIG. 2E described above, except that the metal bumps S3 are formed on the pads 102 by electroplating. After the metal bumps S3 are formed, a first electrode S1 is formed by sputtering or evaporation to cover the respective metal bumps S3. In the present embodiment, the material of the metal bump S3 is electrically connected to the second electrode S2 by the first adhesive metal layer H1, without first forming the first electrode S1 on the metal bump. On block S3. Further, when the material of the metal bump S3 is copper or a copper alloy, the first electrode S1 on the metal bump S3 can be used as an oxidation resistant layer (for example, a nickel/gold layer) to avoid oxidation of the copper surface. 11 201025519 FMy/UUllW 29474twf.doc/d In summary, the present invention proposes a plurality of component sealing joint structures and processes thereof, which can be applied to a wide variety of micro package components, such as gene chips, protein wafers, and sample processing. Wafers, biosensing wafers, etc., or implantable biomedical components, in addition to the bumping layer to enhance the bonding strength of the dense _, can simultaneously achieve the effect of device loosening and packaging, to avoid intrusion of toxic substances into the living body . In addition, the buffer bump layer is completed in the same patterning process, no additional light is required, and multiple mask processes are required to reduce the process steps, and the subsequent sealing process and component packaging steps (4) are performed. Simplify component sealing and sealing process and reduce production costs. Although the present invention has been disclosed in the above embodiments, it is not intended to limit the general knowledge of the present invention, and may be modified in some cases without departing from the arsenic and scope of the present invention. Retouching, so the scope of the patent application scope attached to this issue shall prevail. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1A and FIG. 1B are schematic cross-sectional views showing a component sealing joint structure according to a second embodiment of the present invention. © Head 2A to Figure 2E are schematic diagrams of the k-pass of the method of fabricating the component sealing joint structure of Figure 1A. 3A and 3B are schematic cross-sectional views showing a component sealing joint structure according to another embodiment of the present invention. 4A and 4B are schematic cross-sectional views showing a component sealing joint structure according to another embodiment of the present invention. 5A and 5B are schematic cross-sectional views showing a component sealing joint structure according to another embodiment of the present invention. 6A and 6B are schematic cross-sectional views showing a component sealing joint structure 12 201025519 rjiy/uiziiv/ 29474twf.doc/d according to another embodiment of the present invention. [Main component symbol description] 1001 to 1010: component sealing joint structure 100: component 100S: active surface 100P: protective layer 102: pad 1Ό4: metal layer 104a: bump bottom metal layer • 110': buffer material 110: slow Punching bump layer 110a: first portion 110b: second portion 110c: third portion 110d: annular portion 120: conductive joint portion 130: sealing joint portion _140: substrate W: substrate 51: first electrode 52: second Electrode 53: metal bump H1: first adhesive metal layer H2: second adhesive metal layer H3: third adhesive metal layer R1: joint ring 13 201025519 /υιζι l W 29474twf.doc/dc: sealed space 150: substrate 152: Via 53: third electrode 54: nerve stimulating electrode 160: carrier 162: pad 170: biocompatible coating 100a: first component ❿ 150a: first substrate 100b: second component 150b: second substrate 14