201019408 六、發明說明： 【發明所屬之技術領域】 本發明係錢於-種晶H赋裝置及細試方法，制是有關於一 種設有轉換器與回饋裝置之晶圓測試裝置及其測試方法。 ；一 【先前技術】 在習知技術之晶圓進行測試時，$ 了避免探針卡上探針與晶圓發生 不當接觸’進而降低探針卡之使轉命與晶_試良率，通常會在兩 ❹ 者之間加人細70件’ ^只可得知探針卡上之探針是砰故障受損， 以提高探針之使用效能及避免傷害到晶圓上之微電路，更可降低探针 與晶圓上之微電路因接觸不良而降低晶圓之測試良率。 請參考第1圖’先前技術之台灣公告專利TWS69〇17已揭露一種 含有力量回饋的垂直式探針卡’此探針卡包含有薄膜基板⑴、陣列探 針η、薄膜壓力感測器4、連接探針底部之球栅陣列結構14與測試載 板(PCB)15，其中薄膜壓力感測器4係以微影餘刻的方式先在薄 1〇上形成壓阻薄膜，然後再將其組配於陣列探針u之每一探針之基 柱’因此可監測探針與待測元件的接觸狀況，據此避免因探針與凸塊 或銲墊未接觸好，而誤判晶片電路之測試失敗。 然而上述先前技術僅能以被動方式得知探針與晶圓的接觸狀況，倘 若得知探針與晶圓之間發生接觸不良時，仍需要以人工處理方式下壓 探針卡以處置未接觸好之探針，無法提供自動化方式直接調整探針卡 的下壓力量，因此在實際使用上仍影響晶圓之測試良率與效率。此外 若晶圓測試裝置平台接近探針卡的速度或力道異常或不穩定，即使有 彈性接觸結構或緩衝物質成分的探針，其緩衝力道有限，仍舊可能會 對晶圓表面上的微電路產生破壞，甚至造成探針故障受損。 201019408 【發明内容】 …為了解決上述先前技術的不盡理想之處，本發賴供了—種晶圓 測試裝置及其測試方法’此晶剩試裝置包含_晶圓承載平台、一探 針卡、複數個轉換器、一測試載板、一測試台以及一回饋裝置。此晶 圓承載平台提供X-Y-Z三軸之移動以承載一制晶圓。探針卡包含有 ，個探針以職上述晶圓承載平台上之待測晶圓。另外，測試載板的 其:一端連接此探針卡且其另—·連接測試台，用以接受探針卡所 測得的待測晶圓之測試信號，並將此測試信號傳送到測試台以進行相 _·!、，運算處理’並產生上述晶圓之測試結果。當轉換器偵測到晶圓承 . 位移時’轉換器傳送—位移電子信號給回饋裝置，而 回=置接收到位移電子信號料透過驅動馬達以自動調整晶圓承載 Z軸往探針卡移_速度4外轉換器分職置在晶圓承載平 °沿Z轴位移至探針卡方向，用啸批®承載平台鶴的速度，當 越接近探針卡時，晶圓承載平台移動的速度就越慢，卿，當一轉換 器侧到晶圓承載平台通過時，即產生一位移電子信號給回饋裝置， 而回饋裝置則在接收到位移電子信號後，透過驅動馬達調整 平台沿Z軸往探針卡方向的·速度，當最後一轉換器傳送最後一組 〇 位移電子信號給回饋裝置時，回職置透過驅動馬達調整，而使晶圓 =載平。上的待測晶m接觸到探針咖好停止以達到待測晶圓與探針 卡的探針之間的微接觸。 因此，本發明之主要目的係提供一種晶圓測試裝置，藉由其轉換 回饋裝置可避免晶圓承載平台過當的位移速度，造成探針的末 端才貝傷且破壞晶圓上的微電路。 =發明的再—目的雜供―種晶圓測試裝置，藉由其轉換器以及 回饋裝置，達到以最佳的力道使晶圓承載平台接觸探針，進而達到待 測晶圓與探針卡的探針之間的微接觸。 本發明的又-目_提供_種日日日_邮置，藉由其轉換器以及 5 201019408 回饋裝置，藉由轉換器傳送位移電子信號給回饋裝置，可 =承載平台沿2袖往探針卡方向的移動速度’進而提高晶圓= 本發明的再—目的雜供—種晶圓測試裝置，進—步包含 庫’根據探針卡之測試㈣與待測晶_職資料 ' 載平台對應蚊探針卡之最佳㈣速度。 圓承 本發明之又-目的係提供—種晶關試方法，藉由其轉換 :裝置可避免晶圓承載平台過#的位移速度，造成探針的末端 且破壞晶圓上的微電路。 傍 本發明的再-目的係提供一種晶圓測試方法，藉由其轉換器 回饋裝置’達到以最佳的力道使晶圓承載平台接觸探針，進而達 測晶圓與探針卡的探針之間的微接觸。 ， 本發明的又-目的係提供—種晶_試方法，藉由其轉換器 回饋裝置，藉由轉換器傳送位移電子信號給回館裝置，可適當的 2承載平台沿z軸往探針卡方_移動速度，進而提高晶圓測試的 ❹ 本發明的再-目的係提供—種晶_試方法，進—步設置一 庫’娜探針卡之測試資料與待測晶圓的測試資料，用以存放_ 載平台對應特定探針卡之最佳移動速度。 【實施方式】 由於本發明係揭露一種晶圓測試裝置及其測試方法，其令使 探針與晶圓有關之測試原理，已為相關技術領域具有通常知識者所能 明瞭，故以下文中之說明，不再作完整描述。同時，以下文中所對昭 之圖式，係表達與本發明特徵有關之結構示意，並未亦不需要依據實 際尺寸完整繪製，盍先敘明。 請參考第2 ®，係本發明提出之第一較佳實施例，為一種晶圓挪 201019408 。此晶義試裝置2G包含有—晶圓承載平台η、一探 :-測試載板23、_測試台24 '複數個轉換 25、一回饋裝 ’ Μ此晶圓承載平台21用以承載—待測晶圓27，而此晶圓承 ^ 係藉由一傳動機構280而與一底座28相連接，而底座進-201019408 VI. Description of the Invention: [Technical Field] The present invention relates to a seed crystal H device and a fine test method, and relates to a wafer test device provided with a converter and a feedback device and a test method thereof . A [previous technique] When testing a wafer of the prior art, it is possible to avoid improper contact between the probe and the wafer on the probe card, thereby reducing the probe card's reincarnation and crystal yield, usually It will add 70 pieces between the two. ' ^ Only know that the probe on the probe card is damaged, so as to improve the performance of the probe and avoid damage to the microcircuit on the wafer. It can reduce the test yield of the wafer due to poor contact between the probe and the microcircuit on the wafer. Please refer to FIG. 1 'Taiwan Announcement Patent TWS69〇17 of the prior art has disclosed a vertical probe card with power feedback'. The probe card comprises a film substrate (1), an array probe η, a film pressure sensor 4, Connecting the ball grid array structure 14 at the bottom of the probe to the test carrier (PCB) 15, wherein the film pressure sensor 4 first forms a piezoresistive film on the thin 1 以 in a lithographic manner, and then sets the group The base column of each probe of the array probe u can thus monitor the contact condition of the probe with the component to be tested, thereby avoiding the test of the chip circuit due to the probe being not in contact with the bump or the pad. failure. However, the above prior art can only know the contact condition between the probe and the wafer in a passive manner. If it is known that the contact between the probe and the wafer is poor, the probe card needs to be manually pressed to dispose of the contact. The good probe can not provide an automatic way to directly adjust the amount of pressure on the probe card, so it still affects the test yield and efficiency of the wafer in practical use. In addition, if the speed or force of the wafer test device platform approaching the probe card is abnormal or unstable, even if the probe with elastic contact structure or buffer material component has limited buffering force, it may still generate microcircuit on the wafer surface. Destruction and even damage to the probe failure. 201019408 [Summary of the Invention] ... In order to solve the above-mentioned unsatisfactory problems of the prior art, the present invention provides a wafer testing device and a testing method thereof. The crystal residual testing device includes a wafer carrying platform and a probe card. , a plurality of converters, a test carrier, a test bench, and a feedback device. This wafer carrying platform provides X-Y-Z triaxial movement to carry a wafer. The probe card includes a probe for the wafer to be tested on the wafer carrying platform. In addition, the test carrier is connected to the probe card at one end and connected to the test bench for receiving the test signal of the wafer to be tested measured by the probe card, and transmitting the test signal to the test bench. The phase _·!, the operation process is performed to generate the test result of the above wafer. When the converter detects the wafer bearing displacement, the converter transmits the displacement electronic signal to the feedback device, and the returning device receives the displacement electronic signal through the driving motor to automatically adjust the wafer carrying the Z axis to the probe card. _Speed 4 external converter is placed on the wafer carrying plane. It is displaced along the Z axis to the direction of the probe card. The speed of the crane is carried by the squadron. When the closer to the probe card, the speed at which the wafer carries the platform moves. The slower, Qing, when a converter side to the wafer carrying platform passes, a displacement electronic signal is generated to the feedback device, and the feedback device receives the displacement electronic signal, and then adjusts the platform along the Z axis through the driving motor. The speed of the probe card direction. When the last converter transmits the last set of 〇 displacement electronic signals to the feedback device, the returning position is adjusted by the drive motor to make the wafer = level. The crystal to be tested on the contact with the probe is stopped to reach the microcontact between the wafer to be tested and the probe of the probe card. SUMMARY OF THE INVENTION Accordingly, it is a primary object of the present invention to provide a wafer testing apparatus which can avoid excessive displacement speed of the wafer carrying platform by the conversion feedback means, causing the end of the probe to be damaged and destroying the microcircuit on the wafer. = Invented re------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------ Microcontact between the probes. The present invention is also provided with a converter and a 5201019408 feedback device, and the transducer transmits a displacement electronic signal to the feedback device, which can be used to carry the platform along the 2 sleeves to the probe. The moving speed of the card direction' further increases the wafer = the re-purpose of the present invention - the type of wafer testing device, the step-by-step library includes the test according to the probe card (4) and the platform to be tested The best (four) speed of the mosquito probe card. The present invention is also directed to providing a seed-off method by which the device can be prevented from displacing the displacement speed of the wafer carrying platform, causing the end of the probe and damaging the microcircuit on the wafer. A further object of the present invention is to provide a wafer testing method by which the converter feedback device can be used to contact the probe with the best force to contact the wafer carrying platform, thereby detecting the probe of the wafer and the probe card. Micro contact between. A further object of the present invention is to provide a seeding-testing method, by which a converter feedback device transmits a displacement electronic signal to a returning device by means of a converter, and the appropriate 2 carrying platform can be moved along the z-axis to the probe card. The _ movement speed, and thus the improvement of the wafer test ❹ The re-purpose of the present invention provides a seed-test method, and further sets the test data of the library 'na probe card and the test data of the wafer to be tested, It is used to store the optimal moving speed of the specific probe card corresponding to the platform. [Embodiment] Since the present invention discloses a wafer testing apparatus and a testing method thereof, the testing principle of the probe and the wafer is known to those of ordinary skill in the related art, and therefore, the following description , no longer a full description. At the same time, the following schematic diagrams are illustrative of the structure associated with the features of the present invention and are not required to be fully drawn in accordance with actual dimensions, as described in the foregoing. Please refer to the 2nd ®, which is a first preferred embodiment of the present invention, which is a wafer shift 201019408. The crystal testing device 2G includes a wafer carrying platform η, a probe: a test carrier 23, a test bench 24, a plurality of conversions 25, a feedback device, and a wafer carrier platform 21 for carrying Wafer 27, which is connected to a base 28 by a transmission mechanism 280, and the base is inserted into -
乂 Y驅，馬達29連接’藉由此驅動馬達29以提供晶圓承載平台u —輛方向的移動。探針卡22 &含有數個探針220以偵測上述 二承載平台21上之待測晶圓27。測試載板23為一印刷電路板，盆 二端連接於探針卡22同時其另—端連接測試台24，作為待測晶圓二 '針卡22與測試台24之間測試信號往返的傳輸介面，而測試台μ則 將所接收_晶圓27戦錄進行運算處理，並產生細試結果。 請繼續參考第2圖，晶圓測試裝置20包含多個轉換器25與一回 饋裝置26 ’其中轉換器25各自安裝在晶圓承載平台21沿三軸之前進 方向(如®示之Z)之不邮餘置，騎_觀25轉有-對發射 部與接收部’有關轉換器25與回饋裝置26之作動方式說明如下。當 轉換器25作用時則發射部與接收部之間會蓋生-感測線(如虛線所 不)’藉由連接在晶圓承載平台U之感測擋板21G是否遮播感測線以‘ 涊晶圓承載平台21在Z軸前進時之位置。例如在本實施例中共使用三 個轉換器25，當晶圓承載平台21進行z軸運動而垂直上升時，則感測 擋板210會依序通過最下方、中間與最上方之轉換器乃之感測線，因 此在這三個位置之轉換器25會依序偵測到晶圓承載平台21通過而輸 出對應之位移電子信號Sd給回饋裝置26，回饋裝置26再將此位移電 子信號Sd轉換成一速度控制信號sv並將其輸出至驅動馬達29，驅動馬 達29根據此速度控制信號Sv而經由傳動機構28〇依序調降晶圓承載平 台21沿Z軸之上升速度V，當晶圓承載平台21通過最上方之轉換器 25之後可使晶圓27即以微接觸方式碰觸探針卡22之探針220。 在上述實施例中，轉換器25與回饋裝置26設置的實際位置並不 201019408乂 Y drive, motor 29 is connected 'by thereby driving motor 29 to provide movement of the wafer carrier platform u. The probe card 22 & includes a plurality of probes 220 for detecting the wafer 27 to be tested on the two carrier platforms 21. The test carrier 23 is a printed circuit board. The two ends of the basin are connected to the probe card 22 and the other end thereof is connected to the test station 24, and the test signal is transmitted as a round trip between the test card 24 and the test station 24. The interface, and the test bench μ performs the arithmetic processing on the received_wafer 27, and produces a fine test result. Referring to FIG. 2, the wafer testing device 20 includes a plurality of converters 25 and a feedback device 26', wherein the converters 25 are each mounted on the wafer carrying platform 21 in the direction of the three axes (eg, Z shown). The operation of the converter 25 and the feedback unit 26 for the transmitting unit and the receiving unit is described below. When the converter 25 is activated, a sensing-sensing line (such as a dotted line) is formed between the transmitting portion and the receiving portion. 'With the sensing baffle 21G connected to the wafer carrying platform U, the sensing line is blocked. The position of the wafer carrier platform 21 as the Z axis advances. For example, in the embodiment, three converters 25 are used in total. When the wafer carrier platform 21 performs z-axis motion and rises vertically, the sensing shutter 210 sequentially passes through the lowermost, middle, and uppermost converters. The sensing line 25, in this three positions, the converter 25 sequentially detects that the wafer carrying platform 21 passes and outputs the corresponding displacement electronic signal Sd to the feedback device 26, and the feedback device 26 converts the displacement electronic signal Sd into a The speed control signal sv is output to the drive motor 29, and the drive motor 29 sequentially adjusts the ascending velocity V of the wafer carrier platform 21 along the Z axis via the transmission mechanism 28 according to the speed control signal Sv. After passing through the uppermost converter 25, the wafer 27 can be brought into contact with the probe 220 of the probe card 22 in a microcontact manner. In the above embodiment, the actual position set by the converter 25 and the feedback device 26 is not 201019408.
設限’可以將轉換器25裝設在晶圓承載平台21而回饋裝置26裝設在 測試台24，或是轉換器25裝設在探針卡22内而回饋裝置26裝設在測 試台24。此外轉換器25裝置的數量並不設限，在本實施例則設置有三 個轉換器。晶圓承載平台21所設定的z轴速度V可以從晶圓承載平台 21開始移動之後，回饋裝置26收到最下方之轉換器25傳來的位移電 子仏號Sd而調整晶圓承載平台21之移動速度的幅度為最大，依序遞 減’當回饋裝置26收到最後轉換器25的位移電子信號&時，由於晶 圓承載平台21非常接近探針220末端，此時晶圓承載平台21移動速 度的調整幅度為最小，使得晶gj承載平台Μ觸碰聰針㈣末端的同 時幾乎停止，進而使晶圓承餅台21以微接財式補探針卡22之 探針220 ’據此提高晶圓測試裝置2()的使用效率，並且避免晶圓π與 探針220因為接觸力過大而故障受損。另外，轉換器25的感測方式亦 =限’可Μ制f子制n、電子機械制^、電韻測器或光學 在上述實施例中，可進. _ ·芡狄置一資料庫30，係根據探 27之戦她魏上侧承紐21 _ 應之最佳軸奴V，其憎料22 _mf射吨 ^ 類、探針間距與測試種類等測試參數 卡種 以包含晶圓圖、晶圓種類與晶_=:而晶圓27的測試資料可 請參考第3 ®，為本發明進_步提出之 第一較佳實闕所提出的-種晶_試方法佳實係根據 ⑴待測晶K至晶圓承載平台，而此; 達達到具有X-Y-Z三軸方向的移動； 承載千口係由一驅動馬 (2)進行上述晶圓承載平台沿—z軸路徑之 ⑶啟動上述晶圓承載平台沿上述#路徑之位置_; 201019408 (4) 調整上述晶圓承載平台沿上述z轴路徑之運動速度，進而使待測晶 圓以微接觸方式碰觸探針卡之探針· (5) 傳送上述制晶圓之峨信號，以進行上述制晶圊之測試，以 及； ⑹進行上述制晶圓之運算處職產生測試結果。 上述之晶圓測試方法係用於一晶圓測試裝置，此外此晶圓測試裝 置所使用之晶ϋ承載平台、探針卡、測試載板、測試台、轉換器、回 饋裝置與其它可能使用物件之結構特徵與作動方式如前述之第一較佳 φ 實施例所揭露者。 以上所述僅為本發明之較佳實施例，並非用以限定本發明之申 請專利權利；同_上的描述’騎熟知本技術領域之專門人士應可 明瞭及實施’因此其他未脫離本發明所揭示之精神下所完成的等效改 變或修飾，均應包含在申請專利範圍中。 【圖式簡單說明】 第1圖為一示意圖’係先前技術揭露之晶圓測試裝置，為-種測試探 © 針卡。 第2圖為一示意圖，係根據本發明提供之第—較佳實施例，為一種晶 圓測試裝置。 第3圖為一流程圖’係根據本發明提供之第二較佳實施例，為一種晶 圓測試方法。 【主要元件符號說明】 薄膜壓力感測器 4 (先前技術) 薄膜基板 10 (先前技術) 201019408 陣列探針 球柵陣列結構 印刷電路板 晶圓測試裝置 晶圓承載平台 感測擋板 探針卡 11 (先前技術) 14 (先前技術) 15 (先前技術) 20 21 210 22 探針 220 測試載板 23 © 測試台 24 轉換器 25 回饋裝置 26 晶圓 27 底座 28 280 29 30 Sd Sv 傳動機構 驅動馬達 資料庫The limiter ' can be installed on the wafer carrier platform 21 and the feedback device 26 is mounted on the test station 24, or the converter 25 is mounted in the probe card 22 and the feedback device 26 is mounted on the test station 24 . Further, the number of devices of the converter 25 is not limited, and in the present embodiment, three converters are provided. After the z-axis speed V set by the wafer carrying platform 21 can be moved from the wafer carrying platform 21, the feedback device 26 receives the displacement electronic signal Sd from the lowermost converter 25 to adjust the wafer carrying platform 21 The amplitude of the moving speed is the largest, and is sequentially decreased. When the feedback device 26 receives the displacement electronic signal & of the last converter 25, since the wafer carrying platform 21 is very close to the end of the probe 220, the wafer carrying platform 21 moves at this time. The speed adjustment is minimized, so that the crystal gj carrying platform Μ touches the end of the Cong pin (4) and stops almost at the same time, so that the wafer bearing table 21 is supplemented by the probe 220 of the probe card 22 The wafer test apparatus 2() is used efficiently, and the wafer π and the probe 220 are prevented from being damaged due to excessive contact force. In addition, the sensing mode of the converter 25 is also limited to "can be made", the electromechanical system, the electrical rhyme or the optics can be entered in the above embodiment. According to the probe 27, she Wei Wei side of the new 21 _ should be the best axis slave V, the material of the 22 _mf ray ^ class, probe spacing and test type and other test parameters to include wafer maps, Wafer type and crystal_=: and the test data of wafer 27 can be referred to the 3rd, which is proposed in the first preferred embodiment of the present invention - the seed crystal method is based on (1) The crystal K to be tested is carried to the wafer carrying platform, and the movement is up to the XYZ triaxial direction; the carrying tank is driven by a driving horse (2) for the wafer carrying platform along the -z axis path (3) to start the crystal The position of the circular carrying platform along the above #path_201019408 (4) adjusting the moving speed of the wafer carrying platform along the z-axis path, so that the wafer to be tested touches the probe of the probe card in a micro-contact manner ( 5) transmitting the signal of the above-mentioned wafer to perform the above-mentioned wafer test, and (6) performing the above wafer-making operation The job produces test results. The above wafer testing method is used for a wafer testing device, and the wafer bearing platform, probe card, test carrier, test bench, converter, feedback device and other possible objects used in the wafer testing device are also used. The structural features and actuation modes are as disclosed in the first preferred embodiment of the foregoing. The above description is only a preferred embodiment of the present invention, and is not intended to limit the patent application rights of the present invention; the description of the same as 'the rider's well-known person skilled in the art should be able to understand and implement' Equivalent changes or modifications made in the spirit of the disclosure should be included in the scope of the patent application. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic view of a wafer testing apparatus disclosed in the prior art, which is a test probe. Figure 2 is a schematic view of a crystal round test apparatus in accordance with a first preferred embodiment of the present invention. Fig. 3 is a flow chart showing a method of testing a crystal according to a second preferred embodiment of the present invention. [Major component symbol description] Film pressure sensor 4 (Prior technology) Film substrate 10 (Prior technology) 201019408 Array probe ball grid array structure Printed circuit board Wafer test device Wafer bearing platform Sensing bezel probe card 11 (Prior Art) 14 (Prior Art) 15 (Prior Art) 20 21 210 22 Probe 220 Test Carrier 23 © Test Stand 24 Converter 25 Feedback Device 26 Wafer 27 Base 28 280 29 30 Sd Sv Drive Drive Motor Data Library
位移電子信號 速度控制信號Displacement electronic signal speed control signal
速度 VSpeed V
Z轴方向 ZZ axis direction Z