TW201017842A - Package structure of optical chip and manufacturing method therefor - Google Patents

Abstract

A package structure of an optical chip and manufacturing method therefore are disclosed. The package structure includes an optical chip and at least two conductive metal balls. The optical chip has an optical surface facing upward, a back surface facing downward, and at least two vias passing through the optical chip. Each of the vias has a first end electrically connected to the optical surface and a two end connected to the back surface. The conductive metal balls are electrically connected to the second end of the vias.

Description

[Technical Field] The present invention relates to a package structure of a seed wire W and a method of manufacturing the same, and more particularly to a package structure of an optical wafer having a conductive via and a method of manufacturing the same. [Prior Art] With the improvement of the quality of life and the awareness of environmental protection, the development and use of green resources is becoming more and more extensive. The key project of these is the application of various light emitting diodes (LEDs) to lighting. Because the light-emitting diode has a #power-saving A long life # advantage', therefore, the technology related to the light-emitting diode is continuously extracting efficiency > improving heat dissipation efficiency and prolonging the service life. The above improvements are not only related to the semiconductor material of the light-emitting diode wafer itself, but also have a great correlation with the packaging method of the light-emitting diode wafer. Referring to Figures 1, 2 and 3, the package structure of three conventional light-emitting diode wafers is disclosed. The package structure of a conventional light-emitting diode wafer as shown in Fig. 1 comprises a substrate 11, a circuit layer 12, an adhesive layer 13, an optical wafer 14, at least a wire 15 and a light-transmissive encapsulating material 16. The circuit layer 12' is formed on the front surface of the substrate 11. The optical wafer 14 is fixed to the substrate η by the adhesive layer 13. The optical surface (ie, the light emitting surface) of the optical wafer 14 faces upward and has a solder pad (not used), and the wire ls is electrically connected to the conductive package 16 to protect the optical chip. Bit, you can complete the packaging process. Circuit layer 12. Finally, the second lead 22, an adhesive layer 23, and an optical wafer are shown in FIG. 2 by using a package structure of seven kinds of conventional light-emitting diodes (4) > One pin 21, one flute and one H second wire 25, a light transmissive encapsulating material 26 and a light-filling filler material 27. The top surface of the '10' 21 is recessed to form a cup-shaped recess 2, and the optical crystal is set in the cup-shaped recess 211 by the adhesive layer 23. The rest of the cup-shaped recess 2 曰 __ bribe filling material 27 is purely filled. The optical surface (i.e., the light emitting surface) of the optical wafer 24 faces upward and has a pad (not shown) electrically connected to the first pin 21 and the second pin 22 by the wire 25. Finally, the optical package 24, the wires 25, the fluorescent filler 27, and the like are protected by the transparent encapsulating material 26 & As shown in FIG. 3, the package structure of the light-emitting diode chip includes a substrate 31, two conductive ends 32, two bumps 33, an optical wafer %, two electrodes 35, and a light-transmissive encapsulating material 36. The two sides of the substrate 31 form the conductive ends 32. The optical surface (ie, the light emitting surface) of the optical wafer 34 faces downward and has a soldering ring (not labeled), which forms the electrode 35, and is electrically connected by the bump 33. Sexually connected to the conductive ends 32. Finally, the optical wafer 34, the bumps 33, and the like are covered by the light-transmissive encapsulating material 36 to complete the packaging process. However, the package structure of the light-emitting diode wafers of FIGS. 1 to 3 still has the following problems in practical use of 6 201017842, for example: And the optical wafer of FIG. 2, which uses the wires 15, 25 to guide the power source, but a part of the scales 15, 25 are located on the optical crystal; above the two sides of U4, 24, the light is emitted outward and affects the light extraction. effectiveness. Furthermore, in the optical wafer Μ and Μ of the M2, the adhesive layers 13 and 23 are respectively attached to the substrate η or the first pin, but the thermal conductivity of the adhesive layers 13 and 23 is poor, which may affect the The optical wafers 14, 24 transfer the generated thermal energy to the heat dissipation efficiency of the substrate u or the first lead 21. ❹ When the thermal energy generated by the county wafers 14, 24 cannot be effectively dissipated, the luminous efficiency of the semiconductor material on the optical surfaces of the k optical cymbals 14, 24 will be affected. Therefore, consider the heat dissipation factor, the first! The package structure of Figure 2 and Figure 2 is generally only applicable to light-emitting diode chips with a package power of less than 1 watt (W). On the other hand, although the flip-chip optical wafer 34 of FIG. 3 is not provided with a wire, the thermal energy generated by the optical chip 34 can be transmitted to the conductive terminals and the substrate 3 through the electrode 35 and the bump 33. Higher heat dissipation efficiency. However, since the optical surface of the optical wafer 34 faces downward, the light generated by the optical surface of the optical wafer 34 must be projected onto the electrode 35 or the substrate 31 before being reflected several times outward; or, light It is necessary to penetrate the optical wafer % upwards, and then to reflect the light out several times. Therefore, the flip-chip cover of the third embodiment still causes the light extraction efficiency of the germanium optical wafer 34 to be relatively low. Therefore, it is necessary to provide a package structure of an optical wafer and a method of manufacturing the same to solve the problems of the prior art. 7 201017842 SUMMARY OF THE INVENTION The object of the present invention is to provide a method for sealing a shaft of an optical wafer, wherein the side of the electrical wiring is connected to the optical surface and the back surface so that the power supply line is mixed with the light to extract the scale. "The sound of the gull _ illuminating, and then the second: the second objective is to provide an optical chip package structure and

The method and method are electrically connected to the optical surface and the back surface so that the back side faces downward and the heat energy is quickly led out through the conductive metal ball, thereby improving the heat dissipation efficiency and prolonging the service life. , ▲, ▲ Another object of the present invention is to provide a silk crystal structure and a manufacturing method thereof, which are electrically connected to an optical surface and a back surface by using a conductive through hole, and are used to make a bridle plate. The size of the body view _ wading wafer wa wa wa wa wa wa wa wa wa wa wa wa wa wa wa wa wa wa wa wa wa wa wa wa wa wa wa wa wa wa wa wa wa wa wa wa wa wa wa wa wa wa wa To achieve the above object, the present invention provides an optical wafer package structure comprising an optical wafer and at least two conductive metal balls. The optical wafer has an optical surface, a back surface, and at least two conductive vias with the optical surface facing upward and the back side facing downward. The conductive vias are electrically connected to the optical surface, and a first end of the electrical via is electrically connected to the optical surface, and a second end thereof is connected to the back surface. The conductive metal balls are electrically connected to the conductive The second end of the hole. In an embodiment of the present invention, the back surface further includes a redistribution layer 8 201017842 (re-distribution layer (RDL) '. the redistribution layer is electrically connected to the second end of the conductive via And the conductive metal ball. In an embodiment of the invention, the optical wafer is bonded to a substrate by using the conductive metal balls. The substrate has a light-transmissive encapsulating material for coating the optical wafer and the conductive metal. In one embodiment of the present invention, the optical surface of the optical wafer is further provided with a layer of fluorescent filler material. The glare filling material layer is further provided with a transparent cover plate. The transparent cover is selected from the group consisting of a glass cover. In one embodiment of the present invention, the optical surface of the optical wafer is further provided with a transparent cover having a recessed portion, and the recessed portion is filled with a fluorescent filler material. The transparent cover is selected from the group consisting of glass. cover In an embodiment of the invention, the conductive metal balls are selected from the group consisting of a solder-containing brnnp, a gold-containing bump or a solder ball. In one aspect, the present invention provides a method of fabricating an optical wafer package structure, comprising the steps of: providing an optical wafer comprising a plurality of optical wafers, wherein the optical wafers have an optical surface and a back surface; Forming at least two conductive vias on the optical wafers of the optical wafer, wherein the conductive vias penetrate the optical crystals; i, the conductive vias include - electrically connecting the first ends of the surface of the filaments And connected to the second end of the back surface; the back surface of each of the optical wafers of the scale is divided into at least two conductive metal balls, and the conductive metal balls 9 201017842 are electrically connected to the conductive lines respectively The first of the holes separates the optical wafers. The two ends; and the optical wafer is cut. In an embodiment of the invention, before the light of the optical wafer is formed, the word is changed. Such a day Studies of the back surface of the wafer forming a (re-distribution layer, RDL), and Chi Cao Yu start Μ " μ redistribution layer of the second electrically-based material offering the electrically conductive metal balls are connected such vias. In one embodiment of the present invention, after separating the optical wafers, the spheroidal crystals are disposed on the substrate with the conductive gold material to have a fiber-optic material to coat the spheroidal wafer and the conductive metal ball. In one embodiment of the invention, a phosphor fill material layer and a transparent cover are disposed on the optical surface of the optical wafers prior to forming the conductive metal balls. The transparent cover is selected from the group consisting of glass covers.

In the embodiment of the present invention, a transparent cover having a recessed portion is formed on the optical surface of the optical wafer before forming the conductive metal ball, wherein the recessed portion is filled with a fluorescent filler material. ^ The transparent cover is selected from a glass cover. In one embodiment of the invention, the electrically conductive metal balls are selected from the group consisting of tin bumps, gold bumps, or solder balls. The optical wafers are light emitting diode wafers. The above and other objects, features, and advantages of the present invention will become more apparent. The manufacturing method of the package structure of the optical wafer of the present embodiment mainly includes the following steps: providing - an optical wafer 4, which includes several, as shown in the drawings of the fourth, the criminal, the fourth, the fourth, the fourth, the fourth, and the fourth. The optical wafer 40 has an optical surface μ and a back surface illusion; the silk wafer 40 of the optical wafer 4 is divided into at least two conductive vias 43, wherein the conductive vias such as β 43 through the optical wafers 4, the first ends of the conductive vias 43 are electrically connected to the optical surface 4 and a second end thereof is connected to the back surface 42 for each of the optical wafers 4 The back surfaces 42 of the optical wafers 4 are respectively formed to J-conductive metal balls 44, and the conductive metal balls 44 are electrically connected to the second ends of the conductive vias 43 respectively; and the optical wafer 4 is cut to separate the The optical wafer 40 is equal. Referring to FIG. 4, a first step of the manufacturing method of the optical wafer sealing & mounting structure according to the first embodiment of the present invention is to provide an optical wafer 4 including a plurality of optical wafers 40, wherein the opticals The wafers 4 have an optical surface 41 and a back surface 42, respectively. In this step, the optical wafer 40 included in the optical wafer 4 is preferably selected from the group consisting of a light-emitting diode chip, an organic light-emitting diode chip (OLED chip) or a polymer light-emitting diode chip (pLED chip). Optical wafer. The substrate of the optical wafer 4 may be selected from the group consisting of ruthenium (3⁄4), gallium nitride (Japan) or other semiconductor substrates. The optical surface 41 of the optical wafer 40 is meant to have an optical semiconductor material of 201017842 and can produce an optical reaction surface which can be selected from a single or multiple layers of optical surfaces and can be electroluminescent or photoluminescent ( The ph〇to-Iuminescent) principle produces at least one shade of light. In the present invention, the type of the substrate of the optical wafer 4 or the number of layers of the optical surface 41 and the color of the colored light are not limited. Moreover, the back side 42 refers to the other surface of the optical wafer 4 that does not have an optical semiconductor material, and the back side 42 typically exposes the substrate of the optical wafer 4. Referring to FIGS. 4B and 4C, the manufacturing method of the package structure for an optical wafer according to the first embodiment of the present invention is the second step: at least two of the optical wafers of the optical wafer 4 are divided into at least two conductive layers. a through hole, wherein the conductive vias 43 extend through the optical wafers 4, the conductive vias 43 have a first end electrically connected to the optical surface 41, and a second end connected to the back surface 42 . In this step, the present invention selects the optical wafers of the optical wafer 4 by wafer vias (also known as through-silicon via technology, thr〇ugh silic〇 via, Tsv). 4G. The above-mentioned crystal II through-hole technology can select a through hole through the optical surface 41 and the back surface 42 by means of laser drilling, mechanical drilling or photoresist matching side, and then using electroplating (eleCtr〇plathg), Copper or other conductive metal is filled into the via hole by way of ss plating or printing, which forms the through vias 43. The first ends of the conductive vias 43 are electrically connected to the optical surface 4i' and the second end thereof is connected to the back surface 42 and exposed to the back surface 42. 201017842, as shown in FIG. 4C, after the present step and before the third step, the present invention preferably pre-forms a re-distribution layer (RDL) on the back surface 42 of the optical wafer 40 of the optical wafer 4. The redistribution layer 420 includes at least two pads and optionally forms an insulating layer 421. The soldering pads of the redistribution layer 42 are correspondingly coupled to the second ends of the conductive vias 43. The insulating layer 421 covers the periphery of the pads and other regions than the pads 421. Referring to FIG. 4D, a third step of the manufacturing method of the package structure for an optical wafer according to the first embodiment of the present invention is formed; at least two of the back surfaces 42 of the optical dies 40 of the optical wafer 4 are respectively formed. The conductive metal balls 44 are electrically connected to the second ends of the conductive vias 43 respectively. In this step, the conductive metal balls 44 may be indirectly electrically connected to the second ends of the conductive vias 43 through the pads of the redistribution layer 42A; or, if the redistribution layer 420 is not provided The conductive metal balls μ can be directly electrically connected to the second ends of the conductive vias 43. Furthermore, in this step, the conductive metal balls may be selected from tin bumps (10) to_e () ntaining bumps containing tin materials or tin alloys, s〇lder balls or gold containing gold materials or gold alloys. Bump (g〇ld_c〇ntaining bump). The present invention can utilize existing plating or printing processes in conjunction with a reflow process, and directly form the conductive metal balls 44 (ie, tin bumps) directly on the back surface 42 of each optical wafer 40 of the optical wafer 4. Alternatively, the conductive metal balls 44 are formed directly on the back surface 42 of each of the optical wafers 40 of the optical wafer 4 by means of wire bonding and tearing (ie, including 13 201017842).

Gold bumps; or alternatively, the conductive metal balls 44 may be pre-formed and soldered to the back side 42 (i.e., solder balls) of each of the optical wafers 40 of the optical wafer 4. When the conductive metal balls 44 are selected from tin bumps, it is generally required to form at least one ball bottom metal layer (not shown) on the pads of the redistribution layer 420 or the second ends of the conductive vias 43 in advance. To increase the bonding strength. In this embodiment, it is also possible that some conductive metal balls 44 are not electrically connected to the second ends of the conductive vias 4S, and the conductive metal balls 44 can still be used to support the optical wafers 4 . The thermal energy of the optical wafers 40 is extracted or derived. Referring to Figures 4E and 4F, the fourth step of the manufacturing method of the package structure for an optical wafer according to the first embodiment of the present invention is to cut the optical wafer 4 to separate the optical wafers. In this step, the side shot selects the optical wafer 4 by mechanical cutting, laser cutting or water jet cutting to separate (-g) the optical crystals. After the dicing, each of the optical wafers 4 has the optical surface 4 and the at least two conductive vias 43, the optical surface 4i facing downwards _ the back a facing downward. The conductive material 43 runs through the optical W 4 , and the first derivative of the material transfer U3 is connected to the optical surface 4 and its second end is connected to the back surface. The conductive metal balls are electrically connected to the Weiwei 43 _ two ends. In this way, the electric metal ball 44 can guide an external power source to the optical surface 41 of each optical wafer via the conductive via milk, and the shark reaction (10) generates a specific color light. Please refer to FIG. 4G. After the optical wafers 4 are separated, the first embodiment of the present invention can optionally further secure the optical wafers 40 to the plurality of corresponding substrates 45 by using the conductive metal balls 44, respectively. The substrate 45 is a printed circuit board for packaging ' and is preferably selected from a cup-shaped substrate, but is not limited thereto. When the substrate 45 is selected from a cup-shaped substrate, the substrate 45 is filled with a light-transmissive encapsulating material 46' to cover and protect the optical wafer 40 and the conductive metal ball 44. If desired, the light-transmissive encapsulating material 46 may optionally be blended with phosphor to change the color of the color light produced by the optical wafer. Thus, the encapsulation process of the optical wafer 4 of the present embodiment is completed. When the substrate 45 and the conductive metal ball 44 are introduced into an external power source, the external power source can be guided to the optical surface 41 of the optical wafer 4 through the conductive vias 43 to generate an optical reaction (e.g., to generate a specific color light). At the same time, thermal energy generated during the optical reaction can be conducted to the substrate 45 via the conductive metal balls 44 (and the conductive vias 43). 5A, 5B, 5C', 5D, 5E, 5F, and 5G, the package structure of the optical wafer and the method of manufacturing the same according to the second embodiment of the present invention are similar to the first embodiment of the present invention, but the second The manufacturing method of the package structure of the optical wafer of the embodiment comprises the following steps: providing an optical wafer 5 comprising a plurality of optical wafers 50, wherein the optical wafers 5 have an optical surface 51 and a back surface 52; Each of the optical wafers 5 of the optical wafer 5 is formed with at least two conductive vias 53 ′, wherein the conductive vias 53 extend through the optical wafers, and the conductive vias 53 have an electrical connection to the optical surface 51 . a first end, and a second end connected to the back surface 52; on the optical surface 15 of the optical wafer 50, 201017842 ^ ^ sequentially arranged - a phosphor filling material layer 54 and a transparent cover 55; in the photon The back surface 52 of each of the filament wafers 5 () is divided into at least two conductive metal balls 56'. The conductive metal balls are electrically connected to the second ends of the conductive vias 53, respectively; and cutting The optical wafer 5 is used to separate the optical wafers 50. Further, as shown in FIG. 5C, after the second step and before the third step, the present invention preferably forms a redistribution layer 520 on the back surface 52 of the optical crystal #s() of the optical wafer 5, which It also includes at least two pads and optionally forms an insulating layer 521. As shown in Fig. 5D, the fluorescent filler layer 54 is a mixture of a fluorescent ray and a sizing agent. The present invention is not limited to the mixing ratio. The phosphor fill material layer 54 is used to change the color of the colored light produced by the optical wafers 50. As shown in Fig. 5E, the transparent cover 55 is preferably selected from the group consisting of a glass cover. Referring to FIG. 5G, after separating the optical wafers 5, the optical surface 51 of each optical wafer 50 has the fluorescent filling material layer 54 and the transparent cover 55, and the transparent cover 55 has a protective effect. 'Therefore, it can replace the light-transmissive sealing material. At this time, the packaging process of the optical wafer 5 of the present embodiment has been completed. Further, as shown in Fig. 5H, in the assembly, the second embodiment of the present invention can directly fix the optical wafers 50 to the plurality of corresponding circuit boards 57 by the conductive metal balls 56. When the circuit board 57 and the conductive metal ball 56 are introduced into an external power source, an external power source can be guided to the optical surface 51 of the optical wafer 50 via the conductive vias 53 to generate an optical reaction (e.g., to produce a specific color light). At the same time, the thermal energy generated during the optical reaction can be led to the circuit board 57 via the conductive metal balls 16 201017842 56 (and the conductive vias 53). Please refer to the sixth person, New York, 叱, 61), 6£, 6?, and 6 (} riding, the optical chip packaging structure and the manufacturing method thereof according to the third embodiment of the present invention are similar to the first and second inventions. However, the manufacturing method of the package structure of the optical wafer of the third embodiment is accompanied by the following steps: providing an optical wafer 6 comprising a plurality of optical wafers 6G, wherein the optical wafers (9) have an optical surface 61 And the back surface 62; each of the wires (9) and (9) of the wire 6 is divided into at least two conductive vias 63', wherein the electrical vias extend through the optical wafers 6, and the conductive vias 63 have an electrical connection The first end of the optical meter® 61 is connected to the second end of the back surface 62; a transparent cover 64' is disposed on the optical surface 61 of the optical wafer 6', which has a recess (4), the recess The portion 641 has a fluorescent filling material 65; at least two conductive metal balls are respectively formed on the back surface 62 of each of the optical wafers 60 of the optical wafer 6, and the conductive gold; | ^ 66 are respectively connected to the transducing a second end of the electrical via 63; and dicing the optical wafer 6 to separate the optical wafers 6. As shown in FIG. 6C, after the second step and before the third step, the present invention preferably pre-forms a redistribution layer 620 on the back surface 02 of the optical wafer 6 of the optical wafer 6 which also includes at least a solder pad, and optionally forming an insulating layer (2). The transparent cover 64 is preferably selected from a glass cover, and the transparent cover 64 preferably utilizes an adhesive layer (not shown). The recessed portion 641 can be formed on the optical surface 61 to form various shapes, such as a rectangle, a circle, an arc 17 201017842 or other geometric shapes. The phosphor filling material 65 is a mixture of phosphor powder and an adhesive. The present invention is not limited to the mixing ratio. The phosphor filling material layer 65 is used to change the color of the color light generated by the optical wafers 60.

Referring to FIG. 6F, after the optical wafers 6 are separated, the optical surface 61 of each optical wafer 60 has the fluorescent filling material 65 and the transparent cover 64. The transparent cover 64 has a protective effect. Therefore, it can replace the light-transmitting packaging material. At this time, the packaging process of the optical wafer 6A of this embodiment has been completed. Further, as shown in Fig. 6G, in the assembly, the third embodiment of the present invention can directly use the conductive metal balls 66 to fix the optical wafers 60 on a plurality of corresponding circuit boards 67. When the circuit board 67 and the conductive metal ball 66 are introduced into an external power source, an external power source can be guided to the optical surface 61 of the optical wafer 6 through the conductive vias 63 to generate an optical reaction (eg, to generate a specific color light). . At the same time, the thermal energy generated during the optical reaction can be derived to the circuit board 67 via the conductive metal balls (and the conductive vias 63). As described above, the package structure of the conventional light-emitting diode chip is often affected by the provision of a wire or a flip chip, which affects the light extraction efficiency, or the heat dissipation effect is affected by the provision of the adhesive layer, and FIGS. 4 to 6 The conductive vias 43, 53 and 63 are electrically connected to the optical surfaces 41, 51, 61 and the back faces 42, 52, 62 to be effective, so that the rear faces 42, 52, 62' of the 60 are facilitated. Having the power line layout on the back side 42 avoids affecting the efficiency of the optical surface 41, 51, 61 upwards. Moreover, since the optical wafers 4〇, 5〇18 201017842 52, 62 face down, it is convenient to use the conductive metal balls 44, 56, 66 to quickly derive thermal energy, thereby improving heat dissipation efficiency and extending use. life. Since the invention has high heat dissipation efficiency, it is applicable not only to a light-emitting diode wafer having a package power of less than 1 watt (W), but also to a light-emitting diode wafer having a package power of at least watts (w). In addition, when the transparent wafers 55, 64 are used in conjunction with the optical wafers 4, 60, and 64, the transparent cover can replace the light-transmissive packaging material, thus making the overall structure size small to the wafer level. Wafer level chip scale paekage, which in turn facilitates the miniaturization of the sealing structure (miniaturizati (m). Although the present invention has been implemented well-exposed, it is also a skill in the invention] The scope of protection of the present invention is subject to the definition of the scope of the appended claims. ❹ [Simple description of the drawings] 1 is a schematic view showing a package structure of a conventional light-emitting diode wafer. Fig. 3 is a schematic view showing a package structure of a light-emitting monopole wafer. Fig. 4B 4C is a schematic view showing a package structure of a light-emitting monopole wafer. 4D, 4E, 4F, and 4G drawings. A schematic diagram of a method of manufacturing an optical wafer package structure according to the first embodiment of the present invention. 7. 诏, verb, 51), 5 £, 5 沁 and 纽图: The present invention The second part of the light Fig. 6A, 6B, 6C, 6D, 6E, 6F and 6G are diagrams showing a method of manufacturing an optical chip package structure according to a third embodiment of the present invention.

[Main component symbol description] 11 substrate 12 circuit layer 13 adhesive layer 14 optical wafer 15 wire 16 transparent packaging material 21 first pin 211 cup-shaped recess 22 second pin 23 adhesive layer 24 optical wafer 25 wire 26 light-transmissive package Material 27 Fluorescent Filling Material 31 Substrate 32 Conductive End 33 Bump 34 Optical Wafer 35 Electrode 36 Light Transmissive Encapsulating Material 4 Optical Wafer 40 Optical Wafer 41 Optical Surface 42 Back Side 420 Redistribution Layer 421 Insulation Layer 43 Conductive Through Hole 44 Conductive Metal Ball 45 Substrate 46 Light-transmissive encapsulating material 5 Optical wafer 50 Optical wafer 51 Optical surface 52 Back surface 520 Redistribution layer 521 Insulation layer 201017842 53 Conductive via 54 Fluorescent filling material layer 55 Transparent cover 56 Conductive metal ball 57 Circuit board 6 Optical wafer 60 optical wafer 61 optical surface 62 back surface 620 redistribution layer 621 insulating layer 63 conductive via 64 transparent cover 641 recess 65 fluorescent fill material 66 conductive metal ball 67 circuit board

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Claims (1)

201017842 X. Patent Application Range: 1. An optical wafer package structure comprising: an optical wafer having an "optical surface", a back surface, and at least two conductive vias, wherein the conductive vias extend through the optical crystal 4, and One of the first ends of the conductive vias is electrically connected to the optical surface; and at least two conductive metal balls are electrically connected to a second end of the conductive vias. 2. The package structure of the optical wafer of claim 1, wherein the back surface further comprises a redistribution layer and the redistribution layer occludes the second end of the conductive vias and the conductive metal ball. 3. The package structure of an optical wafer according to claim 1, wherein the optical wafer is bonded to a substrate by using the conductive metal balls. 4. The package structure of an optical wafer according to claim 3, wherein the substrate has a light transmissive encapsulating material to coat the optical wafer and the conductive metal balls. The package structure of the optical wafer according to the above aspect of the invention, wherein the optical surface of the optical wafer is further provided with a layer of fluorescent filler material. The package structure of the optical wafer of claim 5, wherein the fluorescent filler layer is further provided with a transparent cover. 7. The package structure of the optical wafer of claim 1, wherein the optical surface of the optical wafer is further provided with a transparent cover having a recessed portion, and the recessed portion is filled with a fluorescent filler material. . 8. The package structure of an optical wafer according to claim 1, wherein the conductive metal ball such as 22 201017842 is a kick bump, a gold bump or a solder ball. 9. The package structure of an optical wafer according to claim 1, wherein the optical wafer is a light-emitting diode wafer. 10. A method of fabricating an optical wafer package structure, comprising: providing an optical crystal® comprising a plurality of optical wafers, the optical wafer having an optical surface and a back surface; The optical wafer is divided into at least two conductive vias, wherein the electrical vias extend through the optical crystals 4' and the scale conductive vias 3 are electrically connected to the first end of the surface of the filament, and _ is connected to the back surface a second end; the back surface of each of the optical wafers of the optical wafer is divided into at least two conductive metal balls respectively; the conductive metal balls are electrically connected to the second ends of the conductive vias, respectively; and cutting The optical wafer is used to separate the optical wafers. 11. The manufacture of an optical wafer package structure according to claim 10, wherein a redistribution layer is formed on the back side of the optical wafers of the optical wafer before forming the conductive metal balls. And the redistribution layer is electrically connected to the second end of the conductive vias and the conductive metal balls. 2. The manufacturing method of the package structure of an optical wafer according to the scope of the invention, wherein after the separation of the optical wafers, the conductive metal balls of the service or the like are placed on the substrate. The method of claim 12, wherein the substrate has a light-transmissive packaging material & a fabricated metal sheet and a conductive metal ball. The optical crystal K is coated as described in the application. The method of sealing the wire W is applied to the optical surface of the second conductive layer to form a phosphor filling material layer. The method for sealing an optical wafer according to claim 14, wherein the fluorescent filler material layer is further provided with a transparent cover, the optical wafer described in the manufacture of the item H) In the method of forming the conductive metal balls, a (four) cover plate of the upper portion is disposed on the optical surface, wherein the concave portion is filled with a fluorescent filler material. 17. The method of fabricating an optical wafer package structure according to claim 10, wherein the conductive metal balls are tin bumps, gold bumps or solder balls. 18. The method of fabricating an optical wafer package structure according to claim 10, wherein the optical wafers are light-emitting diode chips. twenty four