TW201009999A - Substrate support frame and substrate processing apparatus including the same - Google Patents
Substrate support frame and substrate processing apparatus including the same Download PDFInfo
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- TW201009999A TW201009999A TW098122410A TW98122410A TW201009999A TW 201009999 A TW201009999 A TW 201009999A TW 098122410 A TW098122410 A TW 098122410A TW 98122410 A TW98122410 A TW 98122410A TW 201009999 A TW201009999 A TW 201009999A
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- 239000000758 substrate Substances 0.000 title claims abstract description 171
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 15
- 238000009432 framing Methods 0.000 claims description 2
- 239000002689 soil Substances 0.000 claims 1
- 239000010408 film Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- 230000003014 reinforcing effect Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 4
- 230000005611 electricity Effects 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 230000000994 depressogenic effect Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 241000282320 Panthera leo Species 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 239000002803 fossil fuel Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
201009999 六、發明說明： 【交又參考之相關申請案】 [0001] 本案對申請於2008年7月2曰的韓國專利申請案第 2008-0064016號主張優先權，該韓國專利申請案在此併入作為參 考，如同將其完整描述於本說明書中。 【發明所屬之技術領域】 [0002] 本發明係關於基板處理設備，尤關於支撐基板用之基板 支撐框架，以及包括該框架之基板處理設備及使用該框架來承載 及卸載基板的方法。 【先前技術】 [0003] 因應化石燃料的耗盡及防止環境污染，焦點已聚集在如 太陽能的潔淨能源。特別是，用以將太陽能轉換成電能的太陽能 電池已迅速發展。 [0004] 在太陽能電池中，其可以是矽晶圓或玻璃基板上之 PN(正負型)接合二極體或PIN(正型·本質_負型)二極體的非結晶矽 薄膜，受太陽能激發的少數載子會擴散穿過PN接合面，且電動勢 會由PN接合二極體的兩端之壓差產生。 [0005] 用以形成抗反射層及P(正型)與N(負型)半導體層之一 者或P(正型）、1(本質)及N(負型)非結晶矽薄膜之一者的製^，以 及用以蝕刻該等層或薄膜而形成預先決定之圖形的製程，比 成太陽能電池所需。 & [0006] 圖1 _㈣將薄航齡基板上之傳絲板處理設 備。近來，太陽能電池的基板尺寸已逐漸增大來改善產率。用以 在太陽能電池之大尺寸基板上沉積薄膜用的基板處理設 圖1所示之元件。 [0007] 在圖1中，基板處理設備10包括腔室11、基座12、上 電極15、氣體分配板14、氣體供應管16及排氣孔^。美 係設置於由腔室11所定義的内部空間’且基板s承載& 上。此外，基座12作為上電極15的對應電極。上電極15> 201009999 座方電源17。氣體分配板 •體分配板Μ可與上電極15結合而之^^室有==二201009999 VI. Description of the invention: [Related application for reference] [0001] This application claims priority to Korean Patent Application No. 2008-0064016, filed on Jul. 2, 2008, which is incorporated herein by reference. This is incorporated by reference as if it were fully described in this specification. [Technical Field] The present invention relates to a substrate processing apparatus, and more particularly to a substrate supporting frame for supporting a substrate, and a substrate processing apparatus including the same, and a method of using the same to carry and unload a substrate. [Prior Art] [0003] In response to the depletion of fossil fuels and the prevention of environmental pollution, the focus has been on clean energy such as solar energy. In particular, solar cells used to convert solar energy into electrical energy have rapidly developed. [0004] In a solar cell, it may be a non-crystalline germanium film of a PN (positive and negative type) junction diode or a PIN (positive type/essential_negative type) diode on a germanium wafer or a glass substrate, and is subjected to solar energy. The excited minority carriers diffuse through the PN junction and the electromotive force is generated by the voltage difference across the PN junction diode. [0005] one of an antireflection layer and one of a P (positive) and N (negative) semiconductor layer or a P (positive), 1 (essential), and N (negative) amorphous germanium film. The process and the process for etching the layers or films to form a predetermined pattern are required for solar cells. & [0006] Figure 1 _ (d) The wire processing equipment on the thin airborne substrate. Recently, the substrate size of solar cells has been gradually increased to improve the yield. The substrate shown in Fig. 1 is used for substrate processing for depositing a thin film on a large-sized substrate of a solar cell. In FIG. 1, a substrate processing apparatus 10 includes a chamber 11, a susceptor 12, an upper electrode 15, a gas distribution plate 14, a gas supply pipe 16, and a vent hole. The US is disposed in the internal space defined by the chamber 11 and the substrate s is carried & Further, the susceptor 12 serves as a corresponding electrode of the upper electrode 15. Upper electrode 15> 201009999 Seat power supply 17. Gas distribution plate • The body distribution plate can be combined with the upper electrode 15 and the ^^ room has == two
Luf而排出餘氣體經由設置於腔室11之底部部分的排 [0008]依從基座12之中心部分下向延 運動，基座12可上、下移動。 丞I又琛邛12a的 板HSU座12’並用以將基板S承載至基座12 上成將基板#處卸載。基座12往下移動 ί ；3 ί Π ° ^ ^ ^ 銷13上，且基座12在上移動，將基板s承載在基座12上。 [0010] 相反地，在完成一處理後，基座12往下 降銷13將基板s從基座12上推。因此，基板s從基座12 ^升 [0011] 然而，傳統基板處理設備具有某些缺點。—般而古 降銷由喊材料形成。升降銷在承載及卸載基板_作為i板的 支撐部。當升降銷支撐基板並相對於基板而傾斜時，升降銷受到 基板的承載而會發生如升降銷的斷裂。 [0012] #別是，太陽能的基板厚於半導體的基板。一般而言， 因為太陽能基板具有數釐米以上的厚度，其具有相對較大的"重 參量。當升降銷所支撐的基板具有相對較大的重量時，升降銷的斷 裂會較頻繁發生。因升降銷斷裂之故，設備需離線以便更換戍修 復升降銷，產量便會下降。 ' > [0013] 升降銷斷裂的問題並不限於用以處理太陽能基板的設 備。升降銷斷裂會發生在用以處理用於其他目的之基板的設備。 ； 【發明内容】 4 [〇〇14] 據此’本發明係基板支樓框架及包括該框架之基板處理 設備，其消除了因相關技藝之限制及缺點所產生的一或更多個問 題。 [0015] 本發明之其他特徵及優點可於下述說明，且部分地由以 201009999 下說明而能更加了解 > 或能由實施本發明而獲知。本發明之目的 及其他優點將會從以下說明之清楚揭露及其申請專利範圍與 圖式中得知並達成。 、 [^〇16]如在此廣泛敘述及所提及之實施例，為了達成本發明此 4及其他優點，並依據其目的，用以將基板承載至腔室之基座上-或將其從該處卸載的基板支撐框架，其中基板支撐框架設置於基 座上方，該框架包括：一本體，支撐該基板之一邊緣部分；一 一開口部，穿過該本體之一中心部分，並對應到該基座之一中心 部分；複數個第一凸出部分，從該本體之一侧延伸至該第一開口 部；及複數個第一凹陷部分，其各者對應到該等凸出部分之相鄰 了者之間的-空間’其中’該等第—凸出部分之各者對應到該基 ^上之一第二凹陷部分，且該等第一凹陷部分之各者對應到該基 座上之一第二凸出部分。 [0017] 在另一實施態樣中，基板處理設備包括：一腔室，具有 一内，空間；一基板支撐框架，包括：一本體；一第一開口^， 穿過該本體；複數個第一凸出部分，從該本體之一側延伸至該第 一開口部；及複數個第一凹陷部分，其各者對應到該等凸出部分 之，鄰二者之間的一空間；及一基座，係位於該腔室之内部空間， 並能上、下移動，該基座係位於該基板支撐框架之下方，並包括 複數個第二凸出部分及複數個第二凹陷部分，該等第二凸出部分 對應到該等第-凹陷部分，而該等第二凹陷部分對應顺等第一❹ 凸出部分，其中，該等第二凹陷部分之各者對應到該等第二凸 部分之相鄰二者之間的一空間。 [〇〇18] 應了解到，前述一般性的說明及以下詳細說明係例示 性、解釋性質的，其欲提供本所請發明之更詳細說明。 【實施方式】 Ί [0028] 茲參照較佳實施例而詳述本發明，較佳實施例之範例得ν 繪示於隨附圖式中。 Τ' [0029] 圖2係根據本發明之實施例而繪示基板處理設備的橫 剖面圖，而圖3係根據本發明之實施例而繪示基板支撐框架的立 201009999 體圖。圖4係根據本發明之實施例而繪示基板支擇框架的平面圖， 而圖5係根據本發明之實施例而繪示基板支撐框架的立體圖。 [0030] 基板處理設備100包括腔室110、基座120、上電極160、 氣體分配板150、氣體供應管no及排氣孔112。基座12〇係設置 於由腔至-110所疋義的内部空間中，而基板S係承載在基^ 12〇 上。此外，基座120作為上電極16〇的對應電極》上電極16〇 .係 設置於基座120上方，並連接至rf(無線射頻)電源18〇。氣體分 配板150係設置於基座12〇與上電極160之間，並具有複數個注 入孔152。氣體分配板15〇可與上電極160結合而固定到腔室11〇。 將來源材料供應進入氣體分配板15〇的氣體供應管17〇貫穿上電 ❿ 極160的一部分，而腔室no中的所剩氣體係經由設置於腔室11〇 之底部表面的排氣孔112排出。 [0031] 此外，基板處理設備100包括位於基座120上或其上方 的基板支撐框架130。升降銷13(圖1)在承載及卸載_^撐基 板，而在本發明中，基板支撐框架13〇支撐基板5;。另一方 板處理設備100不僅可包括基板支撐框架請，更可包括 二 以在承載及卸載基板s期間支撐基板s。 [00^2] ★參相2及圖3，基板讀框架13()包括本體⑶，』Luf and the exhaust gas are moved downward by the central portion of the susceptor 12 via the row [0008] provided at the bottom portion of the chamber 11, and the susceptor 12 is movable up and down. The board HSU 12' is also used to carry the substrate S onto the susceptor 12 to unload the substrate #. The susceptor 12 is moved downward by ί; 3 ί Π ° ^ ^ ^ on the pin 13, and the susceptor 12 is moved upward to carry the substrate s on the susceptor 12. [0010] Conversely, after completing a process, the susceptor 12 lowers the pin 13 to push the substrate s from the susceptor 12. Therefore, the substrate s is lifted from the susceptor 12 [0011] However, the conventional substrate processing apparatus has certain disadvantages. General and ancient sales are formed by shouting materials. The lift pins are carrying and unloading the substrate _ as a support portion of the i-plate. When the lift pin supports the substrate and is inclined with respect to the substrate, the lift pin is loaded by the substrate and breakage such as the lift pin occurs. [0012] #Others, the substrate of the solar energy is thicker than the substrate of the semiconductor. In general, since the solar substrate has a thickness of several centimeters or more, it has a relatively large "heavy parameter. When the substrate supported by the lift pins has a relatively large weight, the breakage of the lift pins occurs more frequently. Due to the breakage of the lift pin, the equipment needs to be taken offline in order to replace the 升降 repair lift pin, and the output will drop. '> [0013] The problem of the split pin breaking is not limited to the device for processing the solar substrate. The lifting pin breakage can occur in equipment used to process substrates for other purposes. [Description of the Invention] [4] The present invention is a substrate support frame and a substrate processing apparatus including the same, which eliminates one or more problems due to limitations and disadvantages of the related art. [0015] Other features and advantages of the present invention will be described in the following description, and will be understood in part by the description of the present invention. The objectives and other advantages of the invention will be apparent from the description and appended claims. [^〇16] As widely described and recited herein, in order to achieve the 4 and other advantages of the present invention, and depending on its purpose, the substrate is carried onto the pedestal of the chamber - or a substrate supporting frame unloaded therefrom, wherein the substrate supporting frame is disposed above the base, the frame comprising: a body supporting an edge portion of the substrate; an opening portion passing through a central portion of the body and corresponding a central portion of the base; a plurality of first protruding portions extending from one side of the body to the first opening; and a plurality of first recessed portions each corresponding to the protruding portions a space between the adjacent ones, wherein each of the first and second protruding portions corresponds to one of the second recessed portions on the base, and each of the first recessed portions corresponds to the base One of the second protruding portions. [0017] In another embodiment, the substrate processing apparatus includes: a chamber having an inner space; a substrate supporting frame comprising: a body; a first opening ^ passing through the body; a protruding portion extending from one side of the body to the first opening portion; and a plurality of first recessed portions each corresponding to a space of the protruding portions, a space between the two; and a The pedestal is located in an inner space of the chamber and is movable up and down. The pedestal is located below the substrate supporting frame and includes a plurality of second protruding portions and a plurality of second concave portions. The second convex portion corresponds to the first concave portion, and the second concave portions correspond to the first first convex portion, wherein each of the second concave portions corresponds to the second convex portion A space between adjacent ones. [18] It is to be understood that the foregoing general description and the following detailed description are illustrative and illustrative, and are intended to provide a more detailed description of the invention. [Embodiment] The present invention will be described in detail with reference to the preferred embodiments, examples of which are illustrated in the accompanying drawings. 2 is a cross-sectional view of a substrate processing apparatus according to an embodiment of the present invention, and FIG. 3 is a perspective view of a substrate supporting frame according to an embodiment of the present invention. 4 is a plan view showing a substrate supporting frame according to an embodiment of the present invention, and FIG. 5 is a perspective view showing a substrate supporting frame according to an embodiment of the present invention. [0030] The substrate processing apparatus 100 includes a chamber 110, a susceptor 120, an upper electrode 160, a gas distribution plate 150, a gas supply pipe no, and a vent hole 112. The susceptor 12 is disposed in an internal space defined by the cavity to -110, and the substrate S is carried on the substrate. In addition, the susceptor 120 serves as a corresponding electrode of the upper electrode 16A. The upper electrode 16 is disposed above the susceptor 120 and is connected to the rf (radio frequency) power source 18A. The gas distribution plate 150 is disposed between the susceptor 12A and the upper electrode 160 and has a plurality of injection holes 152. The gas distribution plate 15A can be fixed to the chamber 11A in combination with the upper electrode 160. The gas supply pipe 17 that supplies the source material into the gas distribution plate 15A passes through a portion of the electric power electrode 160, and the residual gas system in the chamber no passes through the vent hole 112 provided in the bottom surface of the chamber 11A. discharge. Further, the substrate processing apparatus 100 includes a substrate support frame 130 on or above the susceptor 120. The lift pins 13 (Fig. 1) are carrying and unloading the base plates, and in the present invention, the substrate support frames 13 are supported by the substrate 5; The other panel processing apparatus 100 may include not only the substrate supporting frame but also the supporting substrate s during carrying and unloading of the substrate s. [00^2] ★Phase 2 and Figure 3, the substrate read frame 13 () includes the body (3),
二及f二開口部135及136。基板S的邊緣部分係由本體13 所^撐。第一開口部135係形成在本體131的前側表面上，而$ ί 136係形成在本體131的側表面。本體131具有對編 當基板S為晶圓時，本體131具有 120 ^ ^ 120 i:基板s的底部表面’以將基板s上推泰 ίϊ ，使機器人輸入/輸出的第二開口部 被本體131包圍。亦即，本體131 j f圖5中’開口部⑶ ： J丨尽體131包括四個側壁，而沒有第二開 -4 201009999 (圖3)。側壁上形成有溝槽138。基板由機器人200經過 輸送進入開口部135。溝槽138的數量係取決於機器人 ?〇的，械臂加數量。在承載及卸载_，機器人·必須猶微 的運^或向下移動。據此’溝槽138的深度係取決於機器人細 基板支撐框架130係位於使第二開口部136對應到位於 、惠、之側壁的基板進/出缚(未繚示)的位置。本體131可具有 4 132’§亥邊緣部分從本體之上表面凹陷，以有效地支撐基 邊緣部分132的上表面具有比捕131較低的高度。 並傾斜至邊緣部分132。在此情況下，基板 Hi 的上表面，而接觸邊緣部分132的上表面。當本 Ϊ二的上表面而不具有邊緣部分132時，基板S會從 it j搖動。因為基板s接觸本體131的邊緣部分印 士免前述問題。此外，基板謂框架⑽具有支 腳ΐ基板支撐框架m之底部表面凸出，並接觸基座 方面^^ ^支腳133可以是跟著本體131 *連續延伸的。另一 n複數^支腳133可彼此隔開而形成。亦可省略支腳⑶。 ΐ Λ稽框架130可由陽極處理雖d形成，且其具有 ί作理氣體的化學容受性。此外，基板支撐框 漿密度呈不ί勻ίί。〇之對應電極的基座電性隔離，以防止電 係形成在腔室110的内側壁。框架支撐 的久娜占* 狀f數量如圖4所不，基板支撐框架13〇 架切部⑽。或者，框架支撐部可以形成在 在基板支撐轉之_二側之各者。爾[*支以可形成 1ΓΖ其圖4緣示設置在基板支撐桓架之邊緣部分上 的土板，基板S與基板支撐框架130的邊緣部分132接觸了寬度Two and f two openings 135 and 136. The edge portion of the substrate S is supported by the body 13. The first opening portion 135 is formed on the front side surface of the body 131, and the $ 136 is formed on the side surface of the body 131. When the body 131 has a pair of substrates S as a wafer, the body 131 has 120 ^ ^ 120 i: the bottom surface of the substrate s to push up the substrate s, so that the second opening of the robot input/output is the body 131 Surrounded. That is, the body 131 j f 'opening portion (3) in Fig. 5: the J-shaped body 131 includes four side walls without the second opening -4 201009999 (Fig. 3). A groove 138 is formed in the sidewall. The substrate is conveyed by the robot 200 into the opening portion 135. The number of grooves 138 depends on the number of robots. In carrying and unloading _, the robot must be moved or moved down. Accordingly, the depth of the groove 138 depends on the robot fine substrate supporting frame 130 being located at a position where the second opening portion 136 corresponds to the substrate in/out of the side wall (not shown). The body 131 may have a 4 132' edge portion recessed from the upper surface of the body to effectively support the upper surface of the base edge portion 132 to have a lower height than the catch 131. And it is inclined to the edge portion 132. In this case, the upper surface of the substrate Hi contacts the upper surface of the edge portion 132. When the upper surface of the second surface does not have the edge portion 132, the substrate S is shaken from it j. Since the substrate s contacts the edge portion of the body 131, the printer is free from the aforementioned problems. Further, the substrate frame (10) has a base surface on which the support substrate m of the support frame is protruded, and the contact portion 133 can be continuously extended along the body 131*. The other n plural legs 133 may be formed apart from each other. The legs (3) can also be omitted. The frame 130 can be formed by anodizing, although it has a chemical acceptability of the gas. In addition, the substrate support frame density is not uniform. The pedestal of the corresponding electrode is electrically isolated to prevent electrical circuitry from being formed on the inner sidewall of the chamber 110. The number of jiunas in the frame support is as shown in Fig. 4, and the substrate support frame 13 is erected (10). Alternatively, the frame supporting portion may be formed on each of the two sides of the substrate support. The slab is formed on the edge portion of the substrate supporting truss, and the substrate S is in contact with the edge portion 132 of the substrate supporting frame 130.
201009999 約3_(mm)至約。當寬卢太狭窄時， 基板s可能會有不穩定的 j严5狭乍時，201009999 About 3_(mm) to about. When the wide Lu is too narrow, the substrate s may be unstable.
Si：；* 於基座的問題。其係因加熱器(未繪示)設置 [〇〇37]在圓4中，邊緣部分132之上表面盥太體ηι夕μ矣品 ί;:ί 表面呈傾斜狀。職板s對準到基板支 個部分為對該縣面呈垂直狀。避免 潯膜形成在基板S的側表面有其優點。 ％兄 往上移動時，基座120的上表面穿過第一開 。接觸基的底部表面，以將基板s上推到處理位置。 f ϊίί側表面應該與基座i2G的上表面完整接觸，進而 ί T理，基座12G的上表面便具有不平均的形狀。基座 120的中心邻为接觸基板8的底部部分，基座12〇的第一外部部分 if接觸邊緣部分132的底部表面，且絲12〇的第二外部部分 124接觸支腳133的底部表面。 [0039] 基座120可包括強化部分126。強化部分126可由陶兗 材料形成。當基座120接觸基板支撐框架13()的支腳133時，基 座120的一部分或支腳133的陽極處理膜可能會損耗，使基板支 樓框架130與基座120之間電性隔離受到破壞。具有抗磨耗屬性 的材料(如陶瓷)的強化部分126能避免此問題。強化部分126係設 置於基座120中或基座12〇上。在任何情況下，當支腳133接觸 強化部分126時，基座120應該接觸基板s。 [0040] 當強化部分126不從第二外部部分124的上表面凸出 時，支腳133的厚度係等於第一及第二外部部分122及124之間 的高度差。另一方面’當強化部分126從第二外部部分124的上 表面凸出時:’支腳133與強化部分120的厚度總和係等於第一及 第二外部部分122及124之間的高度差。若未形成支腳丨33，基座 120便不具有第二外部部分124。 201009999 [0041]在此，基板的承載及卸載處理 圖 基板S未輸人進入腔室UG之前，基板If ^ ίΓΛ二並由位於腔室11G側壁的框架支撐部二 3110 過基板進/出璋(未繪示)而輸送進入 ί_的第二開口部136而置在基板 ί i第1 Μ35上方。接著，機器人(未繪示)往下 移動，使基板S置於基板支撐框架13〇的邊緣部分132上。 器人(未繪示)消失之後，腔室110的真^ 即:基座no的中心部分穿過基板支撑框架m的第一開口部出Si:;* Problems with the pedestal. It is set by the heater (not shown) [〇〇37] in the circle 4, and the upper surface of the edge portion 132 is η 体 夕 夕 :;: ί The surface is inclined. The alignment of the job board s to the substrate is vertical to the county. Avoiding the formation of the ruthenium film on the side surface of the substrate S has its advantages. When the % brother moves up, the upper surface of the base 120 passes through the first opening. The bottom surface of the base is contacted to push the substrate s up to the processing position. f ϊίί The side surface should be in full contact with the upper surface of the pedestal i2G, and the upper surface of the pedestal 12G has an uneven shape. The center of the susceptor 120 is adjacent to the bottom portion of the contact substrate 8, the first outer portion of the pedestal 12 if if it contacts the bottom surface of the edge portion 132, and the second outer portion 124 of the wire 12 接触 contacts the bottom surface of the leg 133. [0039] The susceptor 120 can include a reinforcement portion 126. The reinforcing portion 126 may be formed of a ceramic material. When the susceptor 120 contacts the legs 133 of the substrate support frame 13 (), a portion of the susceptor 120 or the anodized film of the legs 133 may be worn out, causing electrical isolation between the substrate framing frame 130 and the susceptor 120. damage. The reinforced portion 126 of a material having an anti-wear property, such as ceramic, can avoid this problem. The reinforcing portion 126 is disposed in the base 120 or on the base 12A. In any case, when the leg 133 contacts the reinforcing portion 126, the base 120 should contact the substrate s. [0040] When the reinforcing portion 126 does not protrude from the upper surface of the second outer portion 124, the thickness of the leg 133 is equal to the difference in height between the first and second outer portions 122 and 124. On the other hand, when the reinforcing portion 126 protrudes from the upper surface of the second outer portion 124: the sum of the thicknesses of the leg 133 and the reinforcing portion 120 is equal to the height difference between the first and second outer portions 122 and 124. If the footrest 33 is not formed, the base 120 does not have the second outer portion 124. 201009999 [0041] Here, before the substrate carrying and unloading process substrate S is not input into the chamber UG, the substrate If ^ ΓΛ 由 is passed through the substrate support portion 2110 located on the side wall of the chamber 11G through the substrate inlet/outlet ( It is not shown) but is transported into the second opening portion 136 of the ί_ and placed above the first Μ35 of the substrate ί i . Next, the robot (not shown) moves downward to place the substrate S on the edge portion 132 of the substrate supporting frame 13A. After the disappearance of the person (not shown), the true portion of the chamber 110, that is, the central portion of the base no, passes through the first opening portion of the substrate support frame m.
部表面’並將基板S連同基板支撐框架130上 it作f載處理、。當基板s置於處理位置時，將來源材料經 ^得電力。因此，作為純自域與軒之齡物的電漿電二 生，使薄膜沉積到基板s上。 [0042] S薄膜形成製程完成之後，基座往下移動。當基 120移動時，基板支撐框架13㈣本體13 所懸掛，以使基板支撐框㈣〇及基板s從基座12〇 =043]即使基板8因靜電而緊密黏合在基座12〇上，當基板從The surface of the portion is treated with the substrate S together with the substrate support frame 130. When the substrate s is placed in the processing position, the source material is subjected to electricity. Therefore, the film is deposited on the substrate s as a plasma electricity source of the pure self-domain and the age of Xuan. [0042] After the S film forming process is completed, the susceptor moves downward. When the base 120 moves, the substrate supporting frame 13 (four) body 13 is suspended so that the substrate supporting frame (four) and the substrate s are detached from the base 12 043 = 043] even if the substrate 8 is closely adhered to the pedestal 12 因 due to static electricity, when the substrate From
基座120分離時，因為基板s有足夠厚度，基板s不會受損。 [0044]當基座120往下移動到初始位置時，機器人(未繪示)便 進入腔室而到達基板s下方。接著，基板s被機器A (未繚示)上推 而與基板支樓框架130分離，並從腔室11〇輸出。此稱作卻載處 理。 [〇〇45]在圖2至圖5所示之基板支撐框架及基板處理設備中， 基板s與基板支撐框架130的邊緣部分132接觸了 w寬度，該寬 度係在約3 mm至約1〇 mm之内，基板8的邊緣並不直接接觸基 1 120。從基座12〇到基板s邊緣的熱傳導會傳遞經過基板支撐框 架130，致使在接觸基板支撐框架13〇的基板s邊緣與接觸基座 120的基板S中心具有溫度差。此溫度差可以是在約攝氏5至1〇 201009999 dt使'儿積率亦具有差異。因此，基板s上之薄膜的均勻性 1 了。些問題，圖6至圖8D說明基板支樓框架及 k農框架支?邱的匕二系根據本發明之實施例而緣示基板支雜架 板主^二ίϊ體圖，而圖7係根據本發明之實施例而綠示基 ϊϊϊϊΐϊΐί圖。圖8Α至圖8D分別根據本發明之實施例而 2陷陷部分與基座之第二凸出部分與第 板if框架23G包括本體231，以及第一及第二開口 ΐ 2 板s的邊緣部分係由本體131所支撐。第一開口When the susceptor 120 is separated, since the substrate s has a sufficient thickness, the substrate s is not damaged. [0044] When the susceptor 120 is moved down to the initial position, a robot (not shown) enters the chamber to reach below the substrate s. Next, the substrate s is pushed up by the machine A (not shown) to be separated from the substrate branch frame 130, and is output from the chamber 11?. This is called the loading process. [45] In the substrate supporting frame and the substrate processing apparatus shown in FIGS. 2 to 5, the substrate s and the edge portion 132 of the substrate supporting frame 130 are in contact with the w width, which is about 3 mm to about 1 inch. Within the mm, the edge of the substrate 8 does not directly contact the base 1 120. Heat transfer from the susceptor 12 to the edge of the substrate s is transmitted through the substrate support frame 130 such that there is a temperature difference between the edge of the substrate s contacting the substrate support frame 13 and the center of the substrate S contacting the susceptor 120. This temperature difference can be about 5 to 1 摄 201009999 dt so that the 'child rate ratio also has a difference. Therefore, the uniformity of the film on the substrate s is 1 . Some problems, FIG. 6 to FIG. 8D illustrate a substrate support frame and a k-neck frame support, and a second embodiment of the present invention, according to an embodiment of the present invention, a substrate support frame, and FIG. 7 is based on The embodiment of the present invention is green. 8A to 8D, respectively, according to an embodiment of the present invention, the second protruding portion of the depressed portion and the base and the second if frame 23G include the body 231, and the edge portions of the first and second opening ΐ 2 plates s It is supported by the body 131. First opening
St本Γ31的前側表面上，而第二開口部236係形 = 本體231具有與基板s相對應的形狀。 本體231具有圓形形狀。當基板s為玻璃基 有形形狀。圖6緣示本體231具有矩形形狀。 山出心刀262a係形成在本體131的側表面上。在相鄰 ，第=出部分262a之間的空間係定義為第一凹陷部分純。亦 9L’ 的側表面上，第一凸出部分262a及第一凹陷部分 &，、父替形成。第二開口部236係形成於本體23丨的一側表面， 而，-凸出部分262a及凹陷部分264a係形成於本體23 J的其他 貝^，面。傾斜侧部分254係設置於本體231的上表面與本體231 =其他側表面之間。第—凸出部分施從傾斜侧部分a% 。 =斜侧部分254之故，能夠有效防止基板s在處理_的運動。 各第一凸出部分262a之距離本體231側表面的寬度可以是在約3 至10 mm的範圍之内。各第一凸出部分262a之延著本體23丨側 面的長度可以是在約5至20mm的範圍之内。 [0048] 基座220包括中心部分221、第一外部部分222及第二 =卜部部分224。第一外部部分222係位於中心部分221與第二外^ ，分224之間。基座220具有階梯形狀。中心部分221係對應 基板支撐框架230的第一開口部235，並由第一開口部曝露出了而 11 201009999 ϋ，Γ山t 包括第二凸出部分262b及第二凹陷部分 4b。第一凸出#分262b係對應到第一凹陷部分⑽&， 部分264b係對應到第一凸出部分施。亦即，第一凸^ 與第二凹陷部*264b相同的形狀，而第二叉部分纖 3i^rri264a相同的形狀。此外，第—凸出部分2必 ί b_的形狀。據此，當基板支撐框 刀工第二凹陷部分264b及第一凹陷部分2咖 ^讀传一平坦頂部表面。第一凸出部分262a的厚度可等於 〇 第==ΪΓΪ麟的深度，而第二凸出部分262b的厚度可等於 ΐΐΞΠΤ的深度。舉_言，第—凸出部分262a的厚 ί面ί網Ϊ出部分獅的厚度。第一凸出部分262a的底部 表面接觸基座220的第一外部部分222。 Γϋ 有基板S的基板支禮框架23G往下移動而被設置在 邊緣接觸从基板S的溫度差異最桃的方式，基板S的 ΐίϊί架230的第一凸出部分262a及基座220的第 此’能改進基板8上之薄膜的均勾性。 〇 231側表而沾一f二’基板支擇框架的第—凹陷部分可延伸至本體 -凹陷刀，且基座的第二凸出部分亦可延伸而具有與第 -:寸。在此情況下，基板S瓣差異能更進 !則壁η框加匕17，框架支撐’ 240係形成在腔室ιι〇(圖2)的内 所示，—Γ支撐彳24G作為基板支撐轉23G的支撐部。如圖7 者’，框加*固if支撐部240形成在基板支撐框架230的各側。或 二個桓ΐίΐϊ可形成在基板支撐框糾相對二側。在此情況下， f00521、支撑σ阿形成在基板支撐框架之相對二側的各者。 凸出^八t考圖8Α至®犯，其繪示基板支撐框架的數個第一 梯ί =第一凸出部分施及第二凸出部分勘具有矩形、 —角形、半圓形等的其中一形狀。 12 201009999 [0〇53]本技術領域中具有通常 .圍及其均等物的範圍 【圖式簡單說明】 • 樣本說明書之 明說明而可解釋本發明之^其並纷不本發明之實施例，連同發 ❹ [[=丨ί 設:的橫剖面圖。 圖。 ’、4本發θ之實施例之基板處理賴的横剖面 !=丨=之實施例之基板支撐框架的立體圖。 [0024] ® 5 ^健之實糊之基板支雜架的平面圖。 [0025] gj 根攄實施例之基板支撐框架的立體圖。 撐部的立體圖。’、❹之實施例之基板支雜架及框架支 [[⑻27]] ^ 實施例之基板支撐框架的平面圖。 撐框架之凸出部分的平面圖f別為根據本發明之實施例之基板支 【主要元件符號說明】 10 基板處理設備 11 腔室 12 基座 12a 基座支撐部 13 升降銷 14 氣體分配板 15 上電極 16 氣體供應管 17 電源’ 13 201009999 18 排氣孔 100基板處理設備 110腔室 112排氣孔 120基座 122 第一外部部分 124 第二外部部分 126 強化部分 130基板支撐框架 131本體 132 邊緣部分 133 支腳 135第一開口部 136 第二開口部 138溝槽 140框架支撐部 150氣體分配板 152 注入孔 160上電極 170氣體供應管 180 電源 200機器人 210機械臂 220 基座 221 中心部分 222 第一外部部分 224 第二外部部分 230基板支撐框架 231本體 235 第一開口部 201009999 236 第二開口部 240框架支撐部 ' 254傾斜側部分 262a第一凸出部分 262b 第二凸出部分 264a第一凹陷部分 • 264b 第二凹陷部分 S 基板 W 寬度The front side surface of the St top 31, and the second opening portion 236 is shaped = the body 231 has a shape corresponding to the substrate s. The body 231 has a circular shape. When the substrate s is a glass-based tangible shape. Figure 6 shows that the body 231 has a rectangular shape. The mountain knives 262a are formed on the side surface of the body 131. The space between adjacent, first-out portions 262a is defined as the first recessed portion is pure. Also on the side surface of 9L', the first convex portion 262a and the first concave portion & The second opening portion 236 is formed on one side surface of the body 23, and the - protruding portion 262a and the recessed portion 264a are formed on the other surface of the body 23 J. The inclined side portion 254 is disposed between the upper surface of the body 231 and the body 231 = other side surfaces. The first convex portion is applied to the inclined side portion a%. = The oblique side portion 254 can effectively prevent the movement of the substrate s during processing. The width of each of the first convex portions 262a from the side surface of the body 231 may be in the range of about 3 to 10 mm. The length of each of the first convex portions 262a extending along the side surface of the body 23 may be in the range of about 5 to 20 mm. [0048] The base 220 includes a central portion 221, a first outer portion 222, and a second portion 224. The first outer portion 222 is located between the central portion 221 and the second outer portion 224. The base 220 has a stepped shape. The central portion 221 corresponds to the first opening portion 235 of the substrate supporting frame 230, and is exposed by the first opening portion. 11 201009999 Γ, the mountain portion t includes the second protruding portion 262b and the second concave portion 4b. The first convex portion #262b corresponds to the first concave portion (10) & the portion 264b corresponds to the first convex portion. That is, the first convex portion has the same shape as the second depressed portion *264b, and the second fork portion 3i?rri264a has the same shape. Further, the first convex portion 2 has a shape of ί b_. According to this, when the substrate supporting frame cutter second recessed portion 264b and the first recessed portion 2 are read, a flat top surface is read. The thickness of the first convex portion 262a may be equal to the depth of 〇 == ΪΓΪ ,, and the thickness of the second convex portion 262b may be equal to the depth of ΐΐΞΠΤ. In other words, the thicker surface of the first-protrusion portion 262a extracts the thickness of the lion. The bottom surface of the first protruding portion 262a contacts the first outer portion 222 of the base 220.基板 The substrate support frame 23G having the substrate S is moved downward and is disposed at the edge contact with the temperature difference from the substrate S. The first protruding portion 262a of the substrate S of the substrate S and the pedestal 220 are first. 'It is possible to improve the uniformity of the film on the substrate 8. The 凹陷 231 side surface and the d-two' substrate-receiving frame may extend to the body-recessed blade, and the second protruding portion of the pedestal may also extend to have a -: inch. In this case, the difference in the S-slab of the substrate can be further improved! Then the wall η frame is twisted 17, the frame support '240 is formed inside the chamber ιι (Fig. 2), and the Γ support 彳 24G is used as the substrate support 23G support. As shown in Fig. 7, the frame-fixing support portion 240 is formed on each side of the substrate supporting frame 230. Or two 桓ΐίΐϊ can be formed on the opposite sides of the substrate support frame. In this case, f00521 and support σ are formed on each of the opposite sides of the substrate support frame. Projection 8 8 to ®, which shows several first steps of the substrate support frame = the first convex portion and the second convex portion are rectangular, angular, semi-circular, etc. One of the shapes. 12 201009999 [0 〇 53] The scope of the present invention is generally defined by the scope of the present invention, and the scope of the present specification is explained by the description of the sample, and the embodiments of the present invention are not explained. Together with the hairpin [[=丨ί 设置: cross section view. Figure. The cross-sectional view of the substrate processing of the embodiment of the present invention is a perspective view of the substrate supporting frame of the embodiment of the present invention. [0024] A plan view of the substrate of the substrate. [0025] A perspective view of a substrate support frame of the embodiment of gj. A perspective view of the struts. The substrate support frame and the frame branch of the embodiment of the invention [[(8)27]] ^ is a plan view of the substrate support frame of the embodiment. A plan view of a convex portion of the support frame is a substrate support according to an embodiment of the present invention. [Main component symbol description] 10 substrate processing apparatus 11 chamber 12 base 12a base support portion 13 lift pin 14 gas distribution plate 15 Electrode 16 gas supply tube 17 power supply ' 13 201009999 18 vent 100 substrate processing apparatus 110 chamber 112 vent 120 pedestal 122 first outer portion 124 second outer portion 126 reinforced portion 130 substrate support frame 131 body 132 edge portion 133 leg 135 first opening portion 136 second opening portion 138 groove 140 frame supporting portion 150 gas distribution plate 152 injection hole 160 upper electrode 170 gas supply pipe 180 power supply 200 robot 210 robot arm 220 221 center portion 222 first External portion 224 second outer portion 230 substrate support frame 231 body 235 first opening portion 201009999 236 second opening portion 240 frame support portion 254 inclined side portion 262a first convex portion 262b second convex portion 264a first concave portion • 264b second recessed portion S substrate W width
Claims (1)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020080064016A KR101465766B1 (en) | 2008-07-02 | 2008-07-02 | Apparatus for treating substrate having substrate support frame |
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| Publication Number | Publication Date |
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| TW201009999A true TW201009999A (en) | 2010-03-01 |
| TWI496239B TWI496239B (en) | 2015-08-11 |
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| Application Number | Title | Priority Date | Filing Date |
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| TW098122410A TWI496239B (en) | 2008-07-02 | 2009-07-02 | Substrate support frame and substrate processing apparatus including the same |
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| Country | Link |
|---|---|
| KR (1) | KR101465766B1 (en) |
| CN (1) | CN101621021B (en) |
| TW (1) | TWI496239B (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR101248929B1 (en) * | 2006-08-25 | 2013-03-29 | 주성엔지니어링(주) | Substrate processing apparatus comprising substrate supporting means |
| CN102263051A (en) * | 2010-05-28 | 2011-11-30 | 桦塑企业股份有限公司 | Wafer loading device |
| KR101247160B1 (en) * | 2010-10-18 | 2013-03-25 | 주성엔지니어링(주) | Thin film deposition apparatus |
| US20120171002A1 (en) * | 2011-01-05 | 2012-07-05 | Electro Scientific Industries, Inc | Apparatus and method for transferring a substrate |
| KR101296313B1 (en) * | 2011-02-10 | 2013-08-14 | 주성엔지니어링(주) | Tray, substrate processing apparatus using the same |
| KR101292817B1 (en) * | 2011-07-25 | 2013-08-02 | 주성엔지니어링(주) | Substrate processing apparatus and substrate processing method using the same |
| KR101885276B1 (en) * | 2013-04-15 | 2018-09-11 | 주식회사 원익아이피에스 | Flip chamber and system for deposition the thin film having the same |
| KR101885273B1 (en) * | 2013-04-15 | 2018-08-03 | 주식회사 원익아이피에스 | Flip chamber and system for deposition the thin film having the same |
| KR101856689B1 (en) * | 2017-10-23 | 2018-05-14 | 주식회사 기가레인 | Substrate processing apparatus including an elevating induced part |
| KR101987576B1 (en) * | 2018-01-24 | 2019-06-10 | 주식회사 기가레인 | Substrate processing apparatus including an interlocking part linked with an elevating inducing part |
| KR102080671B1 (en) * | 2019-05-17 | 2020-02-25 | (주)이엠아이티 | Sample holding device and sample manufacturing method therefor |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH05175162A (en) * | 1991-12-20 | 1993-07-13 | Hitachi Ltd | Dry etching system |
| JP2963275B2 (en) * | 1992-05-15 | 1999-10-18 | ローム株式会社 | The structure of a magazine for firing electrode films on rod-shaped substrates |
| JP3909888B2 (en) * | 1996-04-17 | 2007-04-25 | キヤノンアネルバ株式会社 | Tray transfer type in-line deposition system |
| JP4470274B2 (en) * | 2000-04-26 | 2010-06-02 | 東京エレクトロン株式会社 | Heat treatment equipment |
| TW515063B (en) * | 2001-12-28 | 2002-12-21 | Silicon Integrated Sys Corp | IC package device capable of improving signal quality |
| KR100971369B1 (en) * | 2003-10-31 | 2010-07-20 | 주성엔지니어링(주) | Apparatus for manufacturing liquid crystal display comprising substrate tray, and method of loading or unloading substrate using the same |
| KR100550806B1 (en) * | 2003-10-31 | 2006-02-10 | 권혁종 | Non-slip cover and manufacturing method thereof |
| US7771538B2 (en) * | 2004-01-20 | 2010-08-10 | Jusung Engineering Co., Ltd. | Substrate supporting means having wire and apparatus using the same |
| JP2006080445A (en) * | 2004-09-13 | 2006-03-23 | Bridgestone Corp | Wafer holder for wafer boat |
-
2008
- 2008-07-02 KR KR1020080064016A patent/KR101465766B1/en active IP Right Grant
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2009
- 2009-07-02 TW TW098122410A patent/TWI496239B/en active
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Also Published As
| Publication number | Publication date |
|---|---|
| CN101621021B (en) | 2014-01-29 |
| CN101621021A (en) | 2010-01-06 |
| KR101465766B1 (en) | 2014-12-01 |
| TWI496239B (en) | 2015-08-11 |
| KR20100003947A (en) | 2010-01-12 |
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