TW201009497A - Photosensitive resin composition for MEMS and cured product thereof - Google Patents

Photosensitive resin composition for MEMS and cured product thereof Download PDF

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TW201009497A
TW201009497A TW98122426A TW98122426A TW201009497A TW 201009497 A TW201009497 A TW 201009497A TW 98122426 A TW98122426 A TW 98122426A TW 98122426 A TW98122426 A TW 98122426A TW 201009497 A TW201009497 A TW 201009497A
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epoxy resin
resin composition
following formula
represented
epoxy
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TW98122426A
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TWI483066B (en
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Nao Honda
Ryo Sakai
Naoko Imaizumi
Yoshiyuki Ono
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Nippon Kayaku Kk
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    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/68Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the catalysts used
    • C08G59/687Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the catalysts used containing sulfur
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/20Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
    • C08G59/32Epoxy compounds containing three or more epoxy groups
    • C08G59/3218Carbocyclic compounds
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Epoxy Resins (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Silicon Polymers (AREA)

Abstract

Disclosed is a photosensitive resin composition for an MEMS, which comprises (A) a photo-cationic polymerization initiator and (B) an epoxy resin having two or more epoxy groups on average per molecule, wherein the photo-cationic polymerization initiator (A) is a photo-cationic polymerization initiator (A-1) represented by formula (1).

Description

201009497 六、發明說明: 【發明所屬之技術領域】 本發明係關於感光畫像形成性用環氧樹脂組成物及其 永久硬化生成物,其係可藉由紫外線(uv: Ultraviolet) 微影術進行加工或是使用熱壓印予以壓模,並且在MEMS (Microelectromechanical System:微型機電系統)零件 、微型工具機零件、微型流體零件、μ-TAS (微型整合分 ^ 析系統)零件、噴墨印表機零件、微型反應器零件、導電 層、LIGA (微影電鑄模造)零件、微小射出成形及用於 熱壓印模型及印模、用於細微印刷用途之網版或模板、 MEMS封裝零件、半導體封裝零件、BioMEMS (生物微型 機電系統)及生物光子裝置、以及印刷配線板的製作中爲 有用之組成物及其層合體以及彼等的硬化物。 【先前技術】 可進行微影加工之光阻,近來係廣泛使用於半導體或 MEMS ·微型工具機應用上。此應用中,微影加工係在基 板上形成圖型並進行曝光,接著以顯影液進行顯影來選擇 性地去除曝光區域或非曝光區域而藉此達成。可進行微影 加工之光阻(光阻:Photoresist )有正型及負型,藉由曝 光而溶解於顯影液者爲正型,不溶解者爲負型。先進的電 子封裝應用或MEMS應用中,不僅要求均一之旋轉塗佈 膜的形成能,並要求高深寬比、厚膜之筆直的側壁形狀、 以及對基板的高密接性等。在此,所謂深寬比,係藉由光 -5- 201009497 阻膜厚/圖型線寬所算出,爲表示微影術的性能之重要特 性。 此類光阻,爲人所知者有由多官能雙酚 A酚醛型環 氧樹脂(商品名稱 EPON SU-8 樹脂、Resolution Performance Products 製)及 Dow Chemical 製的 CYRACURE UVI-6974般之光陽離子聚合起始劑(此光陽 離子聚合起始劑係由芳香族锍鹽六氟銻酸鹽的碳酸丙烯酯 溶液所形成)所形成之負型的化學增幅型光阻組成物。該 光阻組成物,由於在3 50nm~450nm的波長區具有極低的 光吸收,所以係作爲厚膜可進行微影加工之光阻組成物而 爲人所知。此光阻組成物,可旋轉塗佈或淋幕塗佈於種種 基板上,接著藉由烘烤使溶劑揮發,形成ΙΟΟμπι或以上 的厚度之固體光阻層,然後使用接觸曝光、近接曝光或投 影曝光等的各種曝光方法,通過光罩來照射近紫外光而藉 此進行微影加工。接著浸漬於顯影液使非曝光區域溶解而 藉此在基板上形成高解析度之光罩的負影像。 例如,專利文獻1中揭示有藉由調配特定的環氧樹脂 ,可維持EPON SU-8樹脂系調配物之良好的畫像解析度 、熱安定性、耐藥性及溶劑性等特性,同時提升黏著性、 層間剝離、龜裂、白斑、應力及柔軟性等特性之手法。然 而,關於本發明之組成物所含有的光陽離子聚合起始劑並 無任何記載,關於因光陽離子聚合起始劑的不同所導致之 壓力鍋試驗(PCT)後的密接性亦未提及。 另一方面,在MEMS零件或MEMS及半導體封裝等 -6- 201009497 領域中’封裝材料的物性對裝置的可靠度會較大影響者, 乃爲人所知。MEMS及半導體元件,會大幅受到周圍溫度 或濕度的變化或是細微的塵埃所影響,導致該特性的劣化 ,且容易因機械振動或衝擊而破損。爲了保護MEMS及 半導體元件免於受到此等外部因素的影響,爲人所知者係 以陶瓷製的箱體或樹脂予以密封而用作爲封裝。 於製造此中空形式的封裝時,爲使用金屬或陶瓷之氣 0 密封時,本質上爲非透濕,但卻具有製造成本高,尺寸精 度差等缺點。相對於此,爲樹脂封裝時,製造成本相對較 低,尺寸精度亦較高,但樹脂基本上具有水分擴散係數, 隨著時間經過會逐漸使水分通過,導致半導體元件的特性 劣化,滲透於保持氣密性之封裝內部的水分,會於玻璃面 凝露,而具有可靠度欠缺之問題點(專利文獻2 )。 [先前技術文獻] [專利文獻] φ [專利文獻1]日本特表2007-522531號公報 [專利文獻2]日本特表2005-2 1 72 1 2號公報 【發明內容】 (發明所欲解決之課題) 使用酚醛型環氧樹脂等的多官能環氧樹脂之以往的感 光性樹脂組成物中,由於所含有之光陽離子聚合起始劑的 感度較低,所以必須含有大量的起始劑,而具有無法於短 時間內忠實地將光罩圖型重現於樹脂圖型之問題點。此外 201009497 ,雖然含有六氟化銻酸離子(SbF6·)之光陽離子聚合起 始劑的感度相對較高,但由於毒性的因素,亦具有使用用 途受限之問題。另一方面,在MEMS零件或MEMS及半 導體封裝等領域中,由於樹脂組成物的耐濕性等理由,而 具有密接力隨著時間經過而降低,使裝置的可靠度大幅降 低之問題。 本發明係鑒於上述的以往情形而創作出,其課題係以 提供具有良好的畫像解析度、熱安定性、耐藥性及溶劑溶 解性,爲高感度且在壓力鍋試驗(PCT )後對基板的密接 性不會降低之感光性樹脂組成物爲目的。 (用以解決課題之手段) 本發明者們係爲了解決上述課題而進行精心的探討, 結果發現,組合有特定的環氧樹脂與特定的光陽離子聚合 起始劑之感光性樹脂組成物係具有高感度,並且若使用此 感光性樹脂組成物來形成樹脂圖型,則能夠形成在壓力鍋 試驗後對基板的密接性不會降低之圖型。 亦即,本發明係關於: (1 ) 一種MEMS用感光性樹脂組成物,爲含有光陽 離子聚合起始劑(A)以及於1分子中具有平均2個以上 的環氧基之環氧樹脂(B)之MEMS用感光性樹脂組成物 , 前述光陽離子聚合起始劑(A)爲下列式(1)所表 不之光陽離子聚合起始劑(A*l), -8 - 201009497 【化1[Technical Field] The present invention relates to an epoxy resin composition for forming a photosensitive image and a permanent hardening product thereof, which can be processed by ultraviolet (UV: Ultraviolet) lithography Or use hot stamping for stamping, and in MEMS (Microelectromechanical System) parts, micro-tool parts, micro-fluid parts, μ-TAS (micro-integrated system) parts, inkjet printers Parts, microreactor parts, conductive layers, LIGA (lithographic electroformed) parts, micro-injection forming and hot stamping models and impressions, screens or stencils for fine-printing applications, MEMS package parts, semiconductors A useful component, a laminate thereof, and a cured product thereof for use in packaging parts, BioMEMS (bio-micro electromechanical systems), biophotonic devices, and printed wiring boards. [Prior Art] Photoresist that can be used for lithography has recently been widely used in semiconductor or MEMS and micro-tooling applications. In this application, the lithography process is performed by forming a pattern on a substrate and exposing it, followed by development with a developer to selectively remove the exposed or non-exposed areas. The photoresist that can be subjected to lithography (photoresist: Photoresist) has a positive type and a negative type, and is dissolved in the developing solution by exposure to a positive type, and insoluble is a negative type. In advanced electronic package applications or MEMS applications, not only the formation energy of a uniform spin coating film but also a high aspect ratio, a straight sidewall shape of a thick film, and high adhesion to a substrate are required. Here, the aspect ratio is calculated by the film thickness of the light -5 - 201009497 / the line width of the pattern, and is an important characteristic indicating the performance of the lithography. Such photoresists are known by a polyfunctional bisphenol A phenolic epoxy resin (trade name EPON SU-8 resin, manufactured by Resolution Performance Products) and CYRACURE UVI-6974 by Dow Chemical. A negative-type chemically amplified photoresist composition formed of a starter (this photocationic polymerization initiator is formed from a solution of an aromatic sulfonium salt hexafluoroantimonate propylene carbonate). Since the photoresist composition has extremely low light absorption in a wavelength region of 3 50 nm to 450 nm, it is known as a photoresist composition for lithographic processing of a thick film. The photoresist composition can be spin-coated or curtain coated on various substrates, and then volatilized by baking to form a solid photoresist layer having a thickness of ΙΟΟμπι or more, and then using contact exposure, proximity exposure or projection. Various exposure methods such as exposure are performed by illuminating near-ultraviolet light through a photomask to perform lithography. Next, it is immersed in a developing solution to dissolve the non-exposed areas, thereby forming a negative image of a high-resolution photomask on the substrate. For example, Patent Document 1 discloses that by blending a specific epoxy resin, it is possible to maintain good image resolution, thermal stability, chemical resistance, and solvent properties of the EPON SU-8 resin-based formulation, and at the same time, improve adhesion. Characters such as sex, interlaminar peeling, cracking, white spots, stress and softness. However, the photocationic polymerization initiator contained in the composition of the present invention is not described, and the adhesion after the pressure cooker test (PCT) due to the difference in photocationic polymerization initiator is not mentioned. On the other hand, in the field of MEMS parts or MEMS and semiconductor packages, etc., in the field of -6-201009497, it is known that the physical properties of the package material have a large influence on the reliability of the device. MEMS and semiconductor components are greatly affected by changes in ambient temperature or humidity or fine dust, which causes deterioration of this characteristic and is easily broken by mechanical vibration or impact. In order to protect MEMS and semiconductor components from such external factors, it is known that they are sealed by a ceramic case or resin and used as a package. In the manufacture of this hollow form of the package, when it is sealed with metal or ceramic gas, it is essentially non-permeable to moisture, but has disadvantages such as high manufacturing cost and poor dimensional accuracy. On the other hand, when the resin is packaged, the manufacturing cost is relatively low, and the dimensional accuracy is also high, but the resin basically has a water diffusion coefficient, and gradually passes moisture over time, resulting in deterioration of characteristics of the semiconductor element, penetration into the retention. The moisture inside the airtight package is condensed on the glass surface, and has a problem of lack of reliability (Patent Document 2). [PRIOR ART DOCUMENT] [Patent Document 1] [Patent Document 1] Japanese Patent Publication No. 2007-522531 [Patent Document 2] Japanese Patent Application Publication No. 2005-2 1 72 1 2 [Description of the Invention] In the conventional photosensitive resin composition using a polyfunctional epoxy resin such as a phenolic epoxy resin, since the photocationic polymerization initiator contained therein has low sensitivity, it is necessary to contain a large amount of an initiator. It has the problem that it is impossible to faithfully reproduce the mask pattern in the resin pattern in a short time. In addition, in 201009497, although the photocationic polymerization initiator containing hexafluoroantimonate ion (SbF6·) has a relatively high sensitivity, it has a problem of limited use due to toxicity. On the other hand, in the field of MEMS parts, MEMS, and semiconductor packages, the adhesion of the resin composition is lowered with time due to the moisture resistance of the resin composition, and the reliability of the device is greatly reduced. The present invention has been made in view of the above-described conventional circumstances, and the object of the present invention is to provide a good image resolution, thermal stability, chemical resistance, and solvent solubility, which is high in sensitivity and is applied to a substrate after a pressure cooker test (PCT). The purpose of the photosensitive resin composition in which the adhesion is not lowered is for the purpose. (Means for Solving the Problems) The inventors of the present invention have conducted intensive studies to solve the above problems, and as a result, have found that a photosensitive resin composition having a specific epoxy resin and a specific photocationic polymerization initiator is combined. When the resin pattern is formed by using the photosensitive resin composition, it is possible to form a pattern in which the adhesion to the substrate after the pressure cooker test is not lowered. In other words, the present invention relates to: (1) A photosensitive resin composition for MEMS, which is an epoxy resin containing a photocationic polymerization initiator (A) and an average of two or more epoxy groups in one molecule ( B) The photosensitive resin composition for MEMS, the photocationic polymerization initiator (A) is a photocationic polymerization initiator (A*l) represented by the following formula (1), -8 - 201009497

F+F o=s=oF+F o=s=o

^S>F ❹^S>F ❹

、s (1) (2 )如前述(1 )項之MEMS用感光性樹脂組成物 ,其中MEMS用感光性樹脂組成物爲封裝用; (3) 如前述(1)或(2)項之MEMS用感光性樹脂 組成物,其中環氧樹脂(B )的軟化點爲40°C以上120°C 以下,且環氧當量爲15〇〜500/eq.; (4) 如前述(1)至(3)項中任一項之MEMS用感 光性樹脂組成物,其中環氧樹脂(B )是從下列式(3 )所 表示之環氧樹脂(B-1 );(2) The photosensitive resin composition for MEMS according to the above item (1), wherein the photosensitive resin composition for MEMS is used for packaging; (3) the MEMS according to the above (1) or (2) A photosensitive resin composition, wherein the epoxy resin (B) has a softening point of 40 ° C or more and 120 ° C or less, and an epoxy equivalent of 15 Å to 500 / eq.; (4) as described in (1) to ( The photosensitive resin composition for MEMS according to any one of item 3, wherein the epoxy resin (B) is an epoxy resin (B-1) represented by the following formula (3);

(式中,R分別獨立地表示縮水甘油基或氫原子。k爲平 均重複數’係表示位於0〜30的範圍之實數);及 下列式(4)所表示之環氧樹脂(B-2); -9 - 201009497 【化3](wherein R independently represents a glycidyl group or a hydrogen atom. k is an average number of repetitions, and represents a real number in the range of 0 to 30); and an epoxy resin represented by the following formula (4) (B-2) ); -9 - 201009497 【化3】

(式中,各Ri、R2及R3分別獨立地表示氫原子或具有 1~4個碳原子之院基。p爲平均重複數,係表示位於uo 的範圍之實數):及 下列式(5)所表示之環氧樹脂(B_3) ; φ 【化4】(wherein, each of Ri, R2 and R3 independently represents a hydrogen atom or a hospital group having 1 to 4 carbon atoms. p is an average repeat number, which represents a real number in the range of uo): and the following formula (5) Epoxy resin (B_3); φ [Chemical 4]

(式中,η及m爲平均重複數,係分別獨立地表示位於 1〜30的範圍之實數。R4及R5分別獨立地表示氫原子、具 有1〜4個碳原子之烷基或三氟甲基);及(wherein η and m are the average repeating numbers, and each independently represents a real number in the range of 1 to 30. R4 and R5 each independently represent a hydrogen atom, an alkyl group having 1 to 4 carbon atoms or a trifluoromethyl group. Base); and

下列式(6)所表示之環氧樹脂(b-4);An epoxy resin (b-4) represented by the following formula (6);

(式中,η爲平均重複數,係表示位於1〜30的範圔之實 數);及 下列式(7 )所表示之環氧樹脂(Β - 5 ); -10- 201009497 【化6】(wherein η is an average repeat number, which is a real number of the formula of 1 to 30); and an epoxy resin represented by the following formula (7) (Β - 5 ); -10- 201009497 [Chem. 6]

及使多質子酸酐與下列反應物進行反應而藉此製得之 環氧樹脂(B-6),此反應物爲於1分子中具有至少平均 2個以上的環氧基之環氧化合物與於1分子中具有至少1 個以上的羥基及1個羧基之化合物進行反應而成;及 下列式(9)所表示之環氧樹脂(B-7); 【化7】And an epoxy resin (B-6) obtained by reacting a polyprotonic acid anhydride with the following reactants, wherein the reactant is an epoxy compound having at least an average of two or more epoxy groups in one molecule. a compound having at least one or more hydroxyl groups and one carboxyl group in one molecule is reacted; and an epoxy resin (B-7) represented by the following formula (9);

Q (式中,n爲平均重複數’係表示位於的範圍之實 數);及 丁列式(10)所表示之環氧樹脂(B_8); 【化8】Q (where n is the average number of repetitions is a real number in the range in which it is located); and an epoxy resin (B_8) represented by the formula (10);

201009497 (式中’ π爲平均重複數’係表示位於〇1〜5的範圍之實 數);及 下列式(1 1 )所表示之環氧樹脂(B - 9 );201009497 (wherein π is the average repeat number) means a real number in the range of 〇1 to 5); and an epoxy resin (B-9) represented by the following formula (1 1 );

(式中,l、m及 η爲平均重複數,係表示位於 l + m + n = 2~60的範圍之實數):及 下列式(1 2 )所表示之環氧樹脂(;b - 1 0 ); 【化1 0】(wherein, l, m and η are the average repeating numbers, which are real numbers in the range of l + m + n = 2 to 60): and the epoxy resin represented by the following formula (1 2 ) (; b - 1) 0 ); 【化1 0】

P (12)P (12)

L J η (式中,η爲平均重複數,係表示位於0.^6的範圍之實 數);以及 下列式(1 3 )及/或下列式(i 4 )所表示之化合物與 下列式(1 5 )及/或下列式(1 6 )所表示之化合物的共縮 合物之環氧樹脂(B-U)所成群中所選擇之1種或2種以 上的環氧樹脂; -12- 201009497 【化1LJ η (wherein η is an average repeat number, which represents a real number in the range of 0.16); and a compound represented by the following formula (1 3 ) and/or the following formula (i 4 ) and the following formula (1) 5) and/or one or more epoxy resins selected from the group consisting of epoxy resins (BU) of a cocondensate of a compound represented by the following formula (16); -12- 201009497 1

och3 ShOCH3 OCH, (13)Och3 ShOCH3 OCH, (13)

OCH3 I 3 Si-OCH3 OCH3 (14) 【化1 2OCH3 I 3 Si-OCH3 OCH3 (14) 【化1 2

Or och3 Si-OCH3 0CH3 (15) OCH3 H3C-Si-〇CH3 (16) OCH3 (5) —種硬化物,其係使前述(1)至(4)項中任 一項之MEMS用感光性樹脂組成物硬化而製得。 (6) —種層合體,其係以基材夾持前述(1)至(4 )項中任一項之MEMS用感光性樹脂組成物而成。 (7) —種硬化物,其係使前述(6)項之層合體硬化 而製得。 發明之效果: 本發明之感光性樹脂組成物的特徵,係具有良好的畫 像解析度、熱安定性、耐藥性及溶劑溶解性,爲高感度且 在壓力鍋試驗(PCT )後對基板的密接性不會降低,所以 適合用作爲MEMS用感光性樹脂組成物。 【實施方式】 以下說明本發明之實施型態。 本發明之感光性樹脂組成物,其特徵爲含有前述式( 1)所表示之光陽離子聚合起始劑(A-1)以及於1分子中 -13- 201009497 具有平均2個以上的環氧基之環氧樹脂(B),可形成高 感度且在壓力鍋試驗後對基板的密接性不會降低之圖型。 此外,上述組成物,由於不含毒性高的銻化合物,所以對 人體及環境亦可降低其負荷。 本發明之光陽離子聚合起始劑(A-1),爲受到紫外 線、深紫外線KrF或ArF等之準分子雷射、X射線及電子 線等之輻射線的照射而產生陽離子,且該陽離子可成爲聚 合起始劑之化合物,亦稱爲敏能量線酸產生劑。 接著說明前述環氧樹脂(B)。 本發明之前述環氧樹脂(B),只要是於1分子中具 有平均2個以上的環氧基之環氧樹脂,則無特別限定。當 於1分子中所具有之環氧基爲平均未滿2個時,硬化物的 耐藥性或耐熱性會顯著降低,可能無法承受作爲永久膜的 使用。環氧樹脂(B)的具體例,例如有使酚醛類與表氯 醇及/或甲基表氯醇般的鹵醇反應所製得之酚醛型環氧樹 脂,或是藉由具有烯烴之化合物的氧化反應所製得之環氧 化合物,上述酚醛類,是在酸性觸媒下使酚類(酚、烷基 取代酚、萘酚、烷基取代萘酚、二羥基苯、二羥基萘等) 與甲醛反應所製得。 此等環氧樹脂(B)的環氧當量,較理想爲 150〜500 g/eq.,當較此範圍還小時,就硬化收縮變大而容 易產生硬化物的翹曲或龜裂之觀點來看,乃較不理想。另 一方面,當較此範圍還大時,交聯密度降低,使硬化膜的 強度或耐藥性、耐熱性、耐龜裂性惡化,因而較不理想。 -14- 201009497 本發明中所謂的環氧當量,是指藉由依據JIS K7236之方 法所測定之環氧當量。 此外,當軟化點過低時,在圖型形成時容易產生光罩 黏滯,此外在用作爲乾膜光阻時,於常溫下亦會軟化,因 而較不理想。另一方面,當環氧樹脂(B)的軟化點過高 時,將乾膜光阻層合於基板時不易軟化,使對基板之貼合 性惡化,因而較不理想。從上述理由來看,多官能環氧樹 0 脂(B )之較理想的軟化點爲40~120°C,更理想爲50〜100 °c。本發明中所謂的軟化點,是指藉由依據JIS K7234之 方法所測定之軟化點。 從此等說明來看,本發明之感光性樹脂組成物中,較 理想是軟化點爲40°C以上120°C以下,且環氧當量爲 15 0~5 0(^/64.之環氧樹脂。滿足上述範圍之環氧樹脂(8 )的具體例,例如有 EOCN-102S、EOCN-103S、EOCN-104S、EOCN-1 020、EOCN-4400H、EPPN-201、EPPN-501 ❹ 、EPPN-502 ' XD-1 000、BREN-S、NER-7604、NER-7403 、NER-1302、NER-7516、NC-3000 (均爲商品名稱,曰本 化藥(股)製)' Epikote 157S70 (商品名稱,Japan Epoxy Resin (股)製)、ΕΗPE3 1 5 0 (商品名稱,Daice 1 化學工業(股)製)等。 此等環氧樹脂(B )當中,就硬化膜的耐藥性、電漿 承受性及透明性較高,且硬化物爲低吸濕性等理由來看, 尤其理想爲前述環氧樹脂(B-l) 、(B-2) 、(B-3)、 (B-4 ) 、 ( B-5 ) 、 ( B-6 ) 、 ( B-7 ) 、 ( B-8 ) 、 ( B-9 -15- 201009497 )、(Β·10) 、( B-ll ) 〇 本發明中所謂式(3) ~(12)等所表示之環氧樹脂, 係意味著以各式所表示之環氧樹脂爲主成分的環氧樹脂, 亦有包含當製造該環氧樹脂時所生成的副產物、或是該環 氧樹脂的高分子量體等之情況。 前述式(3)所表示之環氧樹脂(Β-1)的具體例,例 如有Epikotel57 (商品名稱,JER公司製··環氧當量 180〜25 0g/eq.,軟化點 80~90°C ) 、EPON-SU-8 (商品名 稱,Resolution Performance Products 公司製:環氧當量 195~230g/eq. ’軟化點80~90°C )等。前述式(4)所表示 之環氧樹脂(B-2)的具體例,例如有NC-3000 (商品名 稱’日本化藥公司製:環氧當量270〜300g/eq.,軟化點 55〜75 °C)。前述式(5)所表示之環氧樹脂(B-3)的具 體例,例如有 NER-7604、NER-7403、NER-1302 及 NER- 7516(以上均爲商品名稱’日本化藥公司製:環氧當量 200〜500g/eq.’軟化點55~75°C )等。前述式(6)所表示 之環氧樹脂(B-4)的具體例,例如有e〇CN-1020 (商品 名稱,日本化藥公司製:環氧當量190~210g/eq_,軟化點 55~85°C) 、EOCN-103S (商品名稱,日本化藥公司製: 環氧當量209〜2 1 9g/eq.,軟化點8 1〜85。(:)。前述式(7 )所表示之環氧樹脂(B-5)的具體例,例如有NC-6300 (商品名稱’日本化藥公司製:環氧當量230〜235g/eq., 軟化點70〜72°C )。環氧樹脂(Β·6 ),例如有日本特許 第3698499號公報之製法所記載之聚羧酸環氧化合物,其 201009497 環氧當量及軟化點,可藉由用作爲環氧樹脂(B-6)的原 料之環氧樹脂或是所導入之取代基的導入率來進行各種調 整。前述式(9)所表示之環氧樹脂(b-7)的具體例,例 如有EPPN-201-L (商品名稱’日本化藥公司製;環氧當 量180~200g/eq.,軟化點65〜78。(:)。前述式(1〇)所表 不之環氧樹脂(B-8)的具體例,例如有EPPN-501H (商 品名稱’日本化藥公司製:環氧當量162〜172g/eq.,軟化 〇 點51〜57°c ) 、EPPN-501HY (商品名稱,日本化藥公司 製:環氧當量163〜175g/eq·,軟化點57〜63°C) 、EPPN-502H (商品名稱,日本化藥公司製:環氧當量 158〜178g/eq. ’軟化點60〜72°C )。前述式(11)所表示 之環氧樹脂(B-9)的具體例,例如有EHPE3150(商品名 稱’ Daicel化學工業公司製:環氧當量170〜190g/eq.,軟 化點70〜85 °C )。前述式(12)所表示之環氧樹脂(B-1〇 )的具體例’例如有XD- 1 000 (商品名稱,日本化藥公司 ® 製:環氧當量245〜260g/eq.,軟化點68〜78°C)。前述式 (13)及/或式(14)所表示之化合物與前述式(15)及/ 或下列式(16)所表示之化合物的共縮合物之環氧樹脂( B-ll) ’可藉由日本特開2007-29 1 263號公報所記載之方 法來製得。 接著說明本發明之感光性樹脂組成物的各成分之調配 比例。 當以本發明之感光性樹脂組成物之光陽離子聚合起始 劑(A)(以下亦有僅稱爲「(A)成分」時)以及於i -17- 201009497 分子中具有平均2個以上的環氧基之環氧樹脂(B)(以 下亦有僅稱爲「(B)成分」時)的合計量爲100質量% 時,一般係以相對於(A )成分的0.1〜15質量% ’ ( B ) 成分爲85〜99.9質量%之比例來調配。本發明之感光性樹 脂組成物中所使用之光陽離子聚合起始劑(A) ’由於在 波長3 00〜3 80nm的莫耳吸光係數較高,所以必須因應使 用感光性樹脂組成物時的膜厚,來調整爲適當的調配比。 本發明之感光性樹脂組成物,亦可添加用以改良圖型 的性能之具有摻和性的反應性環氧單體(C )(以下亦有 僅稱爲「(C)成分」時)。反應性環氧單體,可使用縮 水甘油醚化合物,例如有二乙二醇二縮水甘油醚、己二醇 二縮水甘油醚、二羥甲基丙烷二縮水甘油醚、聚丙二醇二 縮水甘油醚((股)ADEKA製’ ED506 )、三羥甲基丙 烷三縮水甘油醚((股)ADEKA製,ED5 0 5 )、三羥甲 基丙烷三縮水甘油醚(低氯型式,Nagase Chemtex (股) 製,EX321L)、新戊四醇四縮水甘油醚等。此等環氧單 體,由於一般其含氯量較高,所以較理想爲使用經過低氯 製造法或精製工序後之低氯型式者。此等可單獨使用或混 合2種以上而使用。反應性環氧單體(C)成分係以改善 光阻的反應性或硬化膜的物性之目的來使用’反應性環氧 單體成分較多爲液狀,當該成分爲液狀時’相對於感光性 樹脂組成物的總量,若調配較2 0質量%還多時’於溶劑 去除後的覆膜上形成黏稠而容易引起光罩黏滯’所以較不 適當。就此點來看,當調配單體成分時,以(A)成分、 -18 - 201009497 (B)成分及(C)成分的合計爲光阻的固形份時,該調 配比例於該固形份中較理想爲1 0質量%以下,更理想爲 7質量%以下。 爲了降低本發明之感光性樹脂組成物的黏度來提升塗 膜性,亦可使用溶劑(D)。溶劑只要是油墨、塗料等一 般所使用之有機溶劑,且可溶解各成分者,則均能夠使用 。此類有機溶劑例如有丙酮、丁酮、環己酮及環戊酮等之 φ 酮類;甲苯、二甲苯及四甲基苯等之芳香族烴類;二丙二 醇二甲醚及二丙二醇二乙醚等之二醇醚類;醋酸乙酯、醋 酸丁酯、丁基賽路蘇(Butyl Cello solve )醋酸酯、卡必 醇醋酸酯、丙二醇甲醚醋酸酯及r-丁內酯等之酯類;甲 醇、乙醇、賽路蘇、甲基賽路蘇等之醇類;辛烷及癸烷等 之脂肪族烴;石油醚、石油輕油、加氫石油輕油及溶劑輕 油等之石油系溶劑等。 此等溶劑可單獨使用或混合2種以上而使用。溶劑成 Q 分係以調整塗佈於基材時之膜厚或塗佈性爲目的而添加者 ,用以適當地保持主成分的溶解性或成分的揮發性、組成 物的液體黏度等之使用量,在感光性樹脂組成物中,較理 想爲95質量%以下,更理想爲10〜90質量%。 本發明之感光性樹脂組成物中,更可在提升組成物相 對於基板之密接性的目的下,使用具有摻和性的密接性賦 予劑。密接性賦予劑,例如可使用矽烷偶合劑或是鈦偶合 劑等之偶合劑,較理想爲矽烷偶合劑。 上述矽烷偶合劑,例如有3-氯丙基三甲氧矽烷、乙 -19- 201009497 烯基三氯矽烷、乙烯基三乙氧矽烷、乙烯基三甲氧矽烷、 乙烯基·三(2-甲氧乙氧)矽烷、3-甲基丙烯醯氧基丙基 三甲氧矽烷' 2- (3,4·環氧環己基)乙基三甲氧矽烷、3-環氧丙氧基丙基三甲氧矽烷、3-氫硫基丙基三甲氧矽烷、 3-胺丙基三乙氧矽烷、N-2-(胺乙基)-3-胺丙基三甲氧矽 烷、3-脲丙基三乙氧矽烷等。此等密接性賦予劑可單獨使 用或組合2種以上而使用。 密接性賦予劑,由於亦有與主成分呈未反應性者,所 以除了在基材界面進行作用之成分以外,硬化後乃作爲殘 存成分存在,若使用多量,則會產生物性降低等之不良影 響。就因基材的不同,即使少量亦可發揮效果之觀點來看 ,較適當爲在不造成不良影響之範圍內使用,該使用比例 ,相對於感光性樹脂組成物,較理想爲1 5質量%以下, 更理想爲5質量%以下。 本發明之感光性樹脂組成物中,更可使用吸收紫外線 且用以將所吸收之光能量供應至光陽離子聚合起始劑之增 感劑。增感劑較理想例如有噻吨酮(Thioxanthone)、於 9位與 10位具有院氧基之恵(Anthracene )化合物( 9,10-二烷氧基蒽衍生物)。前述烷氧基,例如有甲氧基 、乙氧基、丙氧基、丁氧基等之C1~C4的烷氧基。9,10-二烷氧基蒽衍生物,更可具有取代基。取代基例如有氟原 子、氯原子、溴原子、碘原子等之鹵素原子;甲基、乙基 、丙基等之C1〜C4的烷基或磺酸烷酯基、羧酸烷酯基等 。磺酸烷酯基或羧酸烷酯基中的烷基,例如有甲基、乙基 -20- 201009497 、丙基等之Cl ~C4的烷基。此等取代基的取代位置較理 想爲2位。 噻吨酮的具體例,有2,4-二甲基噻吨酮、2,4-二乙基 噻吨酮、2,-氯噻吨酮、2,4·二異丙基噻吨酮等,較理想爲 2,4-二乙基噻吨酮(商品名稱1^7&(^1^6〇£丁又-8,日本化 藥(股)製)、2-異丙基噻吨酮。 9,10-二烷氧基蒽衍生物,例如有9,10-二甲氧基蒽、 0 9,1〇-二乙氧基蒽、9,10-二丙氧基蒽、9,10-二丁氧基蒽、 9,10-二甲氧基-2-乙基蒽、9,10-二乙氧基-2-乙基蒽、 9.10- 二丙氧基-2-乙基蒽、9,10-二丁氧基-2-氯蒽、9,10-二甲氧基蒽-2-磺酸甲酯、9,10-二乙氧基蒽-2-磺酸甲酯、 9.10- 二甲氧基蒽-2-羧酸甲酯等。 此等可單獨使用或混合2種以上而使用,但最理想爲 使用2,4-二乙基噻吨酮及9,10-二甲氧基-2-乙基蒽。增感 劑成分,爲了以少量來發揮效果,該使用比例,相對於光 Q 陽離子聚合起始劑(A)成分較理想爲30質量%以下, 更理想爲20質量%以下。 本發明中,當必須降低來自光陽離子聚合起始劑(A )的離子所導致之不良影響時,可添加三甲氧基鋁、三乙 氧基鋁、三異丙氧基鋁、異丙氧二乙氧基鋁及三丁氧基鋁 等之烷氧基鋁;三苯氧基鋁及三(對甲基苯氧基)鋁等之 苯氧基鋁;三乙醯氧基鋁 '三硬脂酸鋁、三酪酸鋁、三丙 酸鋁、三乙醯丙酮鋁、三(三氟乙醯丙酮)鋁、三乙基乙 醯乙酸鋁、二乙醯丙酮庚二酮酸鋁及二異丙氧基(乙基乙 -21 - 201009497 醯乙酸)鋁等的有機鋁化合物等之離子捕集劑,此等成分 可單獨使用或組合2種以上而使用。此外,當以(A)成 分、(B)成分及(C)成分的合計爲光阻的固形份時, 該調配量相對於該固形份爲10質量%以下。 此外,本發明中,亦可因應必要而添加熱可塑性樹脂 、著色劑、增黏劑、消泡劑、均化劑等之各種添加劑。熱 可塑性樹脂例如有聚醚楓、聚苯乙烯、聚碳酸酯等,著色 劑例如有酞菁藍、酞菁綠、碘綠、結晶紫、二氧化鈦、碳 黑、萘黑等,增黏劑例如有有機皂土、皂土、蒙特石等, 消泡劑例如有聚矽氧烷系、氟系及高分子系等之消泡劑。 當使用此等添加劑時,該使用量在本發明之感光性樹脂組 成物中,大致分別爲0.1〜30質量%,可因應使用目的而 適當的增減。 再者,本發明中,例如可使用硫酸鋇、鈦酸鋇、二氧 化矽、非晶形矽石、滑石、黏土、碳酸鎂、碳酸鈣、氧化 鋁、羥化鋁、雲母粉等之無機塡充劑,該調配比例,在本 發明之感光性樹脂組成物中爲〇〜60質量%。 本發明之感光性樹脂組成物,較理想以下列第1表的 比例來調配,可因應必要而添加前述密接性賦予劑、增感 劑、離子捕集劑、熱可塑性樹脂、著色劑、增黏劑、消泡 劑、均化劑及無機塡充劑,並藉由一般方法進行混合、攪 拌而製得。或者是因應必要,使用溶解器、均化器、三軋 輥磨機等之分散機來進行分散、混合。此外,可於混合後 再使用篩網、薄膜過濾器進行過濾。 -22- 201009497 [第1表] 質量 0.1~15.0 85.0〜99.9 1.0〜1 0.0 5.8 〜2090.0 成分名稱 光陽離子聚合起始劑(A) 環氧樹脂(B ) 反應性環氧單體(C ) 溶劑(D ) 本發明之感光性樹脂組成物,較理想爲以液狀來使用 〇 。使用本發明之感光性樹脂組成物時,可使用旋轉塗佈機 等,以0.1〜1000μπι的厚度塗佈於例如矽、鋁、銅等金屬 基板;鉬酸鋰、玻璃、氧化矽' 氮化矽等陶瓷基板;聚醯 亞胺、聚對苯二甲酸乙二酯等之基板上,於60~ 130 °C中進 行5〜60分鐘的加熱處理,去除溶劑而形成感光性樹脂組 成物後,載置具有特定圖型之光罩並照射紫外線’於 50~130°C中進行1~50分鐘的加熱處理後,使用顯影液, 於室溫~50°C中對未曝光部分進行1〜180分鐘的顯影來形 ® 成圖型,接著於1 30~200°C中進行加熱處理’藉此製得可 滿足諸特性之永久保護膜。顯影液,例如可使用7 -丁內 酯、三乙二醇二甲醚、丙二醇甲醚醋酸酯等之有機溶劑; 或是前述有機溶劑與水之混合液等。顯影可使用攪拌式、 噴霧式、冲淋式等之顯影裝置,亦可因應必要來進行超音 波照射。使用本發明之感光性樹脂組成物時’較理想的金 屬基板例如爲鋁。 本發明之樹脂組成物,在使用軋輥塗佈機、壓模塗佈 機、刮刀塗佈機、棒塗佈機、凹版塗佈機等將該組成物塗 -23- 201009497 佈於基底膜後,在設定爲45〜100°C的乾燥爐中進行乾燥 ,來去除特定量的溶劑,此外可因應必要來層合覆蓋膜等 ,藉此可形成乾膜光阻。此時,基底膜上的光阻厚度係調 整爲2~ 100 μιη。基底膜及覆蓋膜,例如可使用聚酯、聚丙 烯、聚乙烯、TAC ( Triacetyl Cellulose :三醋酸纖維素) 、聚醯亞胺等薄膜。此等薄膜,亦可因應必要而使用藉由 聚矽氧烷系脫膜處理劑或非聚矽氧烷系脫膜處理劑等進行 脫膜處理後的薄膜。使用此乾膜光阻時,例如可剝離覆蓋 膜,藉由手動軋輥或積層機等,於溫度40~100°C、壓力 0.05〜2MPa下轉印至基板,與前述液狀的感光性樹脂組成 物同樣地進行曝光、曝光後烘烤、顯影、及加熱處理。 只需如前述般將感光性樹脂組成物供應作爲乾膜,則 可省略對支撐體上之塗佈及乾燥的工序,而能夠更簡便地 使用本發明之感光性樹脂組成物來進行圖型形成。 當用作爲MEMS封裝及半導體封裝時,可藉由本發 明之感光性樹脂組成物來形成被覆或製作中空構造而藉此 使用。MEMS及半導體封裝的基板,可使用下列基板等, 亦即藉由濺鍍或蒸鍍以10~5000A的膜厚將鋁、金、銅、 鉻、鈦等的金屬薄膜成膜於各種形狀的矽晶圓上,並藉由 蝕刻法等將該金屬進行細微加工而成之基板等。因情況之 不同,亦有以1〇~1〇〇〇〇Α的膜厚將氧化矽或氮化矽成膜 作爲無機的保護膜。接著於基板上製作或設置MEMS或 半導體裝置,爲了從外部環境阻隔此裝置,必須形成被覆 或製作出中空構造。當以本發明之感光性樹脂組成物形成 -24- 201009497 被覆時,可藉由前述方法來製作。此外, 造時,可藉由前述方法於基板上形成間隔 方法,於其上方以成爲積層品及間隔壁上 膜進行圖型形成,藉此製作出中空封裝構 後可因應必要,於130〜200°C中進行10~ 處理,藉此製得可滿足諸特性之MEMS 體封裝零件。 ϋ 所謂「封裝」,是爲了保持基板、配 定性,用以阻隔外部環境的氣體、液體的 封方法。本發明所記載之所謂的封裝,係 如ME MS般之具有驅動部者,或SAW裝 中空封裝,以及用以防止半導體基板、印 等的劣化所進行之表面保護或樹脂密封等 本發明之感光性樹脂組成物的特徵, 像解析度、熱安定性、耐藥性及溶劑溶解 φ 在壓力鍋試驗(PCT)後對基板的密接性 ,例如可運用在MEMS (微型機電系統) 機零件、微型流體零件、μ-TAS (微型整 件、噴墨印表機零件、微型反應器零件 零件、微小射出成形及用於熱壓印模型及 印刷用途之網版或模板、MEMS封裝零件 件、BioMEMS及生物光子裝置、以及印 等。當中尤其在MEMS封裝零件及半導 當製作出中空構 壁,再藉由前述 的蓋之方式將乾 造。此外,製作 120分鐘的加熱 封裝零件及半導 線、元件等的安 侵入所使用之密 表示出用以封裝 置等之振盪器的 刷配線板、配線 〇 係具有良好的畫 性,爲高感度且 不會降低,所以 零件、微型工具 合分析系統)零 、導電層、LIGA 印模、用於細微 、半導體封裝零 刷配線板的製作 體封裝中爲有用 -25- 201009497 [實施例] 以下係藉由實施例來詳細說明本發明,但此等實施例 僅爲用以適當說明本發明之例示,並非用以限定本發明。 實施例1〜3及比較例1 (感光性樹脂組成物的調製) 依循第2表所記載之調配量(單位爲質量份),藉由 附有攪拌機之燒瓶,於60°C將多官能環氧樹脂、光陽離 子聚合起始劑及其他成分攪拌混合1小時,而製得本發明 及比較用之感光性樹脂組成物。 (感光性樹脂組成物的圖型形成) 以旋轉塗佈機將實施例1~3及比較例1的各感光性樹 脂組成物塗佈於矽晶圓上後進行乾燥,而製得具有第2表 所示的膜厚(第2表之「塗佈後膜厚」係意味著塗佈、乾 燥後的膜厚)之感光性樹脂組成物層。藉由加熱板,將此 感光性樹脂組成物層在6 5 °C進行5分鐘並且在9 5 °C進行 15分鐘的預烘烤。然後使用i射線曝光裝置(光罩對準器 :Ushio電機公司製)進行圖型曝光(軟式接觸、i射線 ),並藉由加熱板在95 °C進行6分鐘的曝光後烘烤(以 下記載爲「PEB」),使用丙二醇甲醚醋酸酯(以下記載 爲「PGMEA」)並藉由浸漬法在23t進行5分鐘的顯影 處理,而在基板(矽晶圓)上製得硬化的樹脂圖型。 -26- 201009497 (感光性樹脂組成物的感度評估) 前述圖型曝光中,係以光罩轉印精度最優良之曝光量 爲最適曝光量,對各感光性樹脂組成物的感度進行評估。 最適曝光量的値愈小,表示感度愈高。結果如下列第2表 所示。 (感光性樹脂組成物的解析性評估) 解析性:前述圖型曝光中,使用1、5、10、20μιη線 與間距之光罩,在不產生殘渣下所解析出之光阻圖型中’ 測定密接於基板之最細的圖型寬度。結果如下列第2表所 不 ° (感光性樹脂組成物的PCT承受性評估) 藉由濺鍍法將1 000 Α的鋁薄膜成膜於矽晶圓上,對 φ 於使用該基板並於實施例1〜3及比較例1中所製得之各感 光性樹脂組成物,進行與前述相同之圖型形成。使用暖風 對流式烤箱,對所製得之各試驗片施以15(TC、30分鐘之 硬烘烤。然後將各試驗片置入於 HAST ( Highly Accelerated Stress Test:高加速壽命試驗)室(Espec 公 司製)中,設定在121 t:、100% RH、2大氣壓,並保持 在20小時恆溫恆濕狀態(PCT )後,取出試驗片,測定 出第1圖中所模式性顯示之形狀的圖型之密接力,來評估 PCT承受性。此外,使用剪切具從圖型側面部施力,並以 -27- 201009497 圖型從基板剝離的時點中之剪切強度爲密接力。 評估基準 〇(優):密接力爲50gf以上 △(良):密接力爲5gf以上且未滿50gf X (不可):密接力爲未滿5 gf (測定邊限以γ [第2表]Or och3 Si-OCH3 0CH3 (15) OCH3 H3C-Si-〇CH3 (16) OCH3 (5) A cured product of the MEMS photosensitive resin according to any one of the above items (1) to (4) The composition is hardened and produced. (6) A laminated body obtained by sandwiching the photosensitive resin composition for MEMS according to any one of the above items (1) to (4). (7) A cured product obtained by hardening the laminate of the above item (6). Advantageous Effects of Invention The photosensitive resin composition of the present invention has excellent image resolution, thermal stability, chemical resistance, and solvent solubility, and is highly sensitive and adheres to a substrate after a pressure cooker test (PCT). Since it does not deteriorate, it is suitable as a photosensitive resin composition for MEMS. [Embodiment] Hereinafter, embodiments of the present invention will be described. The photosensitive resin composition of the present invention is characterized by containing the photocationic polymerization initiator (A-1) represented by the above formula (1) and having an average of two or more epoxy groups in one molecule from 13 to 201009497. The epoxy resin (B) can form a pattern of high sensitivity and the adhesion to the substrate after the pressure cooker test is not lowered. Further, since the above composition does not contain a highly toxic quinone compound, the load on the human body and the environment can be reduced. The photocationic polymerization initiator (A-1) of the present invention generates cations by irradiation with excimer lasers such as ultraviolet rays, deep ultraviolet rays KrF or ArF, X-rays, and electron beams, and the cations can be generated. A compound which becomes a polymerization initiator, also referred to as a myoelectric acid generator. Next, the above epoxy resin (B) will be described. The epoxy resin (B) of the present invention is not particularly limited as long as it is an epoxy resin having an average of two or more epoxy groups in one molecule. When the epoxy group having one molecule has an average of less than two, the chemical resistance or heat resistance of the cured product is remarkably lowered, and the use as a permanent film may not be withstood. Specific examples of the epoxy resin (B) include a phenolic epoxy resin obtained by reacting a phenolic aldehyde with an epichlorohydrin and/or a methyl epichlorohydrin-like halogen alcohol, or a compound having an olefin. An epoxy compound obtained by an oxidation reaction, wherein the phenolic compound is a phenol (phenol, alkyl-substituted phenol, naphthol, alkyl-substituted naphthol, dihydroxybenzene, dihydroxynaphthalene, etc.) under an acidic catalyst. It is prepared by reacting with formaldehyde. The epoxy equivalent of the epoxy resin (B) is preferably 150 to 500 g/eq., and when it is smaller than this range, the hardening shrinkage becomes large and the warpage or crack of the cured product is likely to occur. Look, it is less ideal. On the other hand, when it is larger than this range, the crosslinking density is lowered, and the strength, chemical resistance, heat resistance, and crack resistance of the cured film are deteriorated, which is not preferable. -14- 201009497 The epoxy equivalent in the present invention means an epoxy equivalent measured by a method in accordance with JIS K7236. Further, when the softening point is too low, the mask is liable to be viscous when the pattern is formed, and when it is used as a dry film resist, it is softened at room temperature, which is not preferable. On the other hand, when the softening point of the epoxy resin (B) is too high, the dry film resist is hardly softened when it is laminated on the substrate, and the adhesion to the substrate is deteriorated, which is not preferable. For the above reasons, the desirable softening point of the polyfunctional epoxy resin (B) is 40 to 120 ° C, more preferably 50 to 100 ° C. The softening point in the present invention means a softening point measured by the method according to JIS K7234. From the above description, the photosensitive resin composition of the present invention preferably has an epoxy resin having an epoxy equivalent of from 40 ° C to 120 ° C and an epoxy equivalent of from 15 0 to 50 (?/64. Specific examples of the epoxy resin (8) satisfying the above range include, for example, EOCN-102S, EOCN-103S, EOCN-104S, EOCN-1 020, EOCN-4400H, EPPN-201, EPPN-501 ❹, EPPN-502 ' XD-1 000, BREN-S, NER-7604, NER-7403, NER-1302, NER-7516, NC-3000 (all product names, 曰本化药(股))' Epikote 157S70 (Product name , Japan Epoxy Resin (share) system, ΕΗPE3 1 5 0 (trade name, Daice 1 chemical industry (stock) system), etc. Among these epoxy resins (B), the resistance of the cured film, the plasma withstand It is preferable that the epoxy resin (Bl), (B-2), (B-3), (B-4), (the above) are high in properties and transparency, and the cured product is low in hygroscopicity. B-5), (B-6), (B-7), (B-8), (B-9 -15- 201009497), (Β·10), (B-ll) 所谓The so-called formula in the present invention (3) The epoxy resin represented by ~(12), etc. means The epoxy resin containing the epoxy resin as a main component may contain a by-product formed when the epoxy resin is produced, or a high molecular weight body of the epoxy resin, etc. The above formula (3) Specific examples of the epoxy resin (Β-1) are shown, for example, Epikotel 57 (trade name, JER company, epoxy equivalent 180 to 25 0 g/eq., softening point 80 to 90 ° C), EPON-SU- 8 (product name, manufactured by Resolution Performance Products: epoxy equivalent: 195 to 230 g/eq. 'softening point: 80 to 90 ° C), etc. Specific examples of the epoxy resin (B-2) represented by the above formula (4) For example, there is NC-3000 (trade name: manufactured by Nippon Kayaku Co., Ltd.: epoxy equivalent: 270 to 300 g/eq., softening point: 55 to 75 ° C). Epoxy resin represented by the above formula (5) (B-3) Specific examples include NER-7604, NER-7403, NER-1302, and NER-7016 (all of which are manufactured under the trade name 'Nippon Chemical Co., Ltd.: Epoxy Equivalent 200~500g/eq.' Softening Point 55~75) Specific examples of the epoxy resin (B-4) represented by the above formula (6) include, for example, e〇CN-1020 (trade name, manufactured by Nippon Kayaku Co., Ltd.: epoxy equivalent 19 0~210g/eq_, softening point 55~85°C), EOCN-103S (product name, manufactured by Nippon Kayaku Co., Ltd.: epoxy equivalent 209~2 1 9g/eq., softening point 8 1~85. (:). Specific examples of the epoxy resin (B-5) represented by the above formula (7) include, for example, NC-6300 (trade name: manufactured by Nippon Kayaku Co., Ltd.: epoxy equivalent 230 to 235 g/eq., softening point 70 to 72) °C). The epoxy resin (Β·6) is, for example, a polycarboxylic acid epoxy compound described in the method of Japanese Patent No. 3698499, which has an epoxy equivalent and a softening point of 201009497, which can be used as an epoxy resin (B-6). The epoxy resin of the raw material or the introduction rate of the introduced substituent is variously adjusted. Specific examples of the epoxy resin (b-7) represented by the above formula (9) include, for example, EPPN-201-L (trade name 'Nippon Chemical Co., Ltd.; epoxy equivalent 180 to 200 g/eq., softening point 65 ~78. (:). Specific examples of the epoxy resin (B-8) represented by the above formula (1) include, for example, EPPN-501H (trade name 'Nippon Chemical Co., Ltd.: epoxy equivalent 162 to 172 g /eq., softening point 51~57°c), EPPN-501HY (trade name, manufactured by Nippon Kayaku Co., Ltd.: epoxy equivalent 163~175g/eq·, softening point 57~63°C), EPPN-502H ( Product name, manufactured by Nippon Kayaku Co., Ltd.: Epoxy equivalent: 158 to 178 g/eq. 'Softening point: 60 to 72 ° C.) Specific examples of the epoxy resin (B-9) represented by the above formula (11), for example EHPE3150 (product name: Daicel Chemical Industry Co., Ltd.: epoxy equivalent: 170 to 190 g/eq., softening point: 70 to 85 ° C). Specific examples of the epoxy resin (B-1 〇) represented by the above formula (12) 'For example, there is XD-1 000 (trade name, Nippon Kayaku Co., Ltd.: epoxy equivalent 245 to 260 g/eq., softening point 68 to 78 ° C). The above formula (13) and / or formula (14) a compound expressed as described above ( The epoxy resin (B-ll) of 15) and/or the cocondensate of the compound represented by the following formula (16) can be produced by the method described in JP-A-2007-29 1263. The ratio of the components of the photosensitive resin composition of the present invention to the photocationic polymerization initiator (A) of the photosensitive resin composition of the present invention (hereinafter also referred to simply as "(A) component") When the total amount of the epoxy resin (B) having an average of two or more epoxy groups in the molecule (i) is only 100% by mass, the total amount of the epoxy resin (B) is hereinafter referred to as "(B) component). In general, the ratio of the component (A) is 0.1 to 15% by mass, and the component (B) is 85 to 99.9% by mass. The photocationic polymerization initiator used in the photosensitive resin composition of the present invention ( A) 'Because the molar absorption coefficient at a wavelength of 30,000 to 3 80 nm is high, it is necessary to adjust the film thickness to a suitable blending ratio in accordance with the film thickness of the photosensitive resin composition. The photosensitive resin composition of the present invention, Additive reactions can also be added to improve the performance of the pattern The epoxy monomer (C) (hereinafter also referred to as "(C) component). The reactive epoxy monomer may be a glycidyl ether compound such as diethylene glycol diglycidyl ether or Glycol diglycidyl ether, dimethylolpropane diglycidyl ether, polypropylene glycol diglycidyl ether ("ED506" made by ADEKA), trimethylolpropane triglycidyl ether (made by ADEKA, ED5) 0 5 ), trimethylolpropane triglycidyl ether (low chlorine type, manufactured by Nagase Chemtex Co., Ltd., EX321L), neopentyl alcohol tetraglycidyl ether, and the like. Since these epoxy monomers generally have a high chlorine content, it is preferred to use a low chlorine type which has been subjected to a low chlorine production method or a purification step. These may be used singly or in combination of two or more. The reactive epoxy monomer (C) component is used for the purpose of improving the reactivity of the photoresist or the physical properties of the cured film. The reactive epoxy monomer component is mostly liquid, and when the component is liquid, the relative component is relatively When the total amount of the photosensitive resin composition is more than 20% by mass, it is less appropriate to form a thick film on the film after solvent removal and easily cause the mask to become viscous. In this regard, when the monomer component is blended, when the total of the component (A), the component -18 - 201009497 (B), and the component (C) is a solid component of the photoresist, the blending ratio is higher in the solid fraction. It is preferably 10% by mass or less, and more preferably 7% by mass or less. A solvent (D) can also be used in order to lower the viscosity of the photosensitive resin composition of the present invention to improve the film properties. The solvent can be used as long as it is an organic solvent generally used for inks, paints, and the like, and can dissolve each component. Examples of such an organic solvent include φ ketones such as acetone, methyl ethyl ketone, cyclohexanone, and cyclopentanone; aromatic hydrocarbons such as toluene, xylene, and tetramethylbenzene; dipropylene glycol dimethyl ether and dipropylene glycol diethyl ether; And other glycol ethers; ethyl acetate, butyl acetate, Butyl Cello solve acetate, carbitol acetate, propylene glycol methyl ether acetate and r-butyrolactone; Alcohols such as methanol, ethanol, 赛路苏, methyl 赛路苏; aliphatic hydrocarbons such as octane and decane; petroleum solvents such as petroleum ether, petroleum light oil, hydrogenated petroleum light oil and solvent light oil Wait. These solvents may be used singly or in combination of two or more. The solvent-based Q component is added for the purpose of adjusting the film thickness or coatability when applied to a substrate, and is used to appropriately maintain the solubility of the main component, the volatility of the component, and the liquid viscosity of the composition. The amount of the photosensitive resin composition is preferably 95% by mass or less, more preferably 10 to 90% by mass. In the photosensitive resin composition of the present invention, an adhesion-promoting agent having blendability can be used for the purpose of improving the adhesion of the composition to the substrate. As the adhesion imparting agent, for example, a coupling agent such as a decane coupling agent or a titanium coupling agent can be used, and a decane coupling agent is preferred. The above decane coupling agent is, for example, 3-chloropropyltrimethoxydecane, ethyl-5-201009497 alkenyltrichloromethane, vinyltriethoxysilane, vinyltrimethoxysilane, vinyltris(2-methoxyethyl) Oxymethane, 3-methylpropenyloxypropyltrimethoxydecane' 2-(3,4·epoxycyclohexyl)ethyltrimethoxydecane, 3-glycidoxypropyltrimethoxydecane, 3 - thiopropylpropyltrimethoxy decane, 3-aminopropyltriethoxy decane, N-2-(aminoethyl)-3-aminopropyltrimethoxy decane, 3-ureidopropyltriethoxy decane, and the like. These adhesion imparting agents may be used singly or in combination of two or more. Since the adhesion imparting agent is also unreactive with the main component, it is present as a residual component in addition to the component acting at the interface of the substrate, and if it is used in a large amount, adverse effects such as deterioration in physical properties are caused. . In view of the difference in the amount of the substrate, it is preferable to use it in a range which does not cause adverse effects, and it is preferable that the ratio is 15% by mass based on the photosensitive resin composition. Hereinafter, it is more preferably 5% by mass or less. In the photosensitive resin composition of the present invention, a sensitizer which absorbs ultraviolet rays and supplies the absorbed light energy to the photocationic polymerization initiator can be further used. The sensitizer is preferably, for example, Thioxanthone, an anthracene compound having an oxime at the 9th and 10th positions (9,10-dialkoxyanthracene derivative). The alkoxy group may, for example, be a C1 to C4 alkoxy group such as a methoxy group, an ethoxy group, a propoxy group or a butoxy group. The 9,10-dialkoxyfluorene derivative may further have a substituent. The substituent may, for example, be a halogen atom such as a fluorine atom, a chlorine atom, a bromine atom or an iodine atom; a C1 to C4 alkyl group such as a methyl group, an ethyl group or a propyl group; or a sulfonic acid alkyl ester group or a carboxylic acid alkyl ester group. The alkyl group in the alkyl sulfonate group or the alkyl carboxylate group may, for example, be a C1-C4 alkyl group such as a methyl group, an ethyl group -20-201009497 or a propyl group. The substitution position of these substituents is preferably 2 positions. Specific examples of the thioxanthone include 2,4-dimethylthioxanthone, 2,4-diethylthioxanthone, 2,-chlorothioxanthone, 2,4·diisopropylthioxanthone, and the like. More preferably, it is 2,4-diethylthioxanthone (trade name: 1^7&(^1^6〇£丁和-8, manufactured by Nippon Kayaku Co., Ltd.), 2-isopropylthioxanthone 9,10-Dialkyloxyfluorene derivatives, for example, 9,10-dimethoxyanthracene, 0,1〇-diethoxyanthracene, 9,10-dipropoxyanthracene, 9,10 -dibutoxy oxime, 9,10-dimethoxy-2-ethyl hydrazine, 9,10-diethoxy-2-ethyl hydrazine, 9.10-dipropoxy-2-ethyl hydrazine, 9,10-dibutoxy-2-chloroindole, methyl 9,10-dimethoxyindole-2-sulfonate, methyl 9,10-diethoxyindole-2-sulfonate, 9.10- Methyl dimethoxy hydrazine-2-carboxylate, etc. These may be used singly or in combination of two or more, but it is most preferred to use 2,4-diethylthioxanthone and 9,10-dimethoxy The sensitizer component is preferably used in an amount of 30% by mass or less, more preferably 20% by mass, based on the photo-Q cationic polymerization initiator (A). % or less. In the present invention, when necessary When reducing the adverse effects caused by the ions of the photocationic polymerization initiator (A), trimethoxy aluminum, triethoxy aluminum, triisopropoxy aluminum, isopropoxy diethoxy aluminum and three may be added. Aluminum alkoxide such as butoxy aluminum; phenoxy aluminum such as triphenyloxy aluminum and tris(p-methylphenoxy) aluminum; aluminum trisulphate aluminum tristearate, aluminum trisuccinate , aluminum tripropionate, aluminum triacetate, aluminum tris(trifluoroacetamidine), aluminum triethylacetate, aluminum diacetate, potassium pimelate, and diisopropoxy (ethyl ethyl) 21 - 201009497 An ion trapping agent such as an organic aluminum compound such as ruthenium acetate), such as aluminum (A), (B), and (C). When the total amount of the components is a solid content of the photoresist, the compounding amount is 10% by mass or less based on the solid content. Further, in the present invention, a thermoplastic resin, a coloring agent, a tackifier, and defoaming may be added as necessary. Various additives such as a agent, a leveling agent, etc. The thermoplastic resin is, for example, polyether maple, polystyrene, polycarbonate, or the like. The coloring agent is, for example, phthalocyanine blue, phthalocyanine green, iodine green, crystal violet, titanium dioxide, carbon black, naphthalene black, etc., and the tackifier is, for example, organic bentonite, bentonite, Montestone, etc., and the antifoaming agent is, for example, polyfluorene. An antifoaming agent such as an oxyalkylene, a fluorine or a polymer. When the additives are used, the amount of the photosensitive resin composition of the present invention is approximately 0.1 to 30% by mass, respectively, which can be used for the purpose of use. Further, in the present invention, for example, barium sulfate, barium titanate, cerium oxide, amorphous vermiculite, talc, clay, magnesium carbonate, calcium carbonate, aluminum oxide, aluminum hydroxide, mica may be used. In the inorganic resin composition such as powder, the blending ratio is 〇60% by mass in the photosensitive resin composition of the present invention. The photosensitive resin composition of the present invention is preferably formulated in the ratio of the following first table, and the adhesion imparting agent, the sensitizer, the ion trapping agent, the thermoplastic resin, the coloring agent, and the tackifying agent may be added as necessary. The agent, the antifoaming agent, the leveling agent and the inorganic chelating agent are prepared by mixing and stirring by a general method. Or, if necessary, dispersing and mixing using a disperser such as a dissolver, a homogenizer, or a three-roll mill. Further, it can be filtered by using a sieve or a membrane filter after mixing. -22- 201009497 [Table 1] Mass 0.1~15.0 85.0~99.9 1.0~1 0.0 5.8 ~2090.0 Ingredient name Photocationic polymerization initiator (A) Epoxy resin (B) Reactive epoxy monomer (C) Solvent (D) The photosensitive resin composition of the present invention is preferably used in the form of a liquid. When the photosensitive resin composition of the present invention is used, it can be applied to a metal substrate such as ruthenium, aluminum or copper at a thickness of 0.1 to 1000 μm using a spin coater or the like; lithium molybdate, glass, yttrium oxide lanthanum nitride a ceramic substrate; a substrate such as polyimide or polyethylene terephthalate, which is subjected to heat treatment at 60 to 130 ° C for 5 to 60 minutes to remove a solvent to form a photosensitive resin composition, and then Place a mask with a specific pattern and irradiate the UV light for heat treatment at 50 to 130 ° C for 1 to 50 minutes, then use the developer to apply the unexposed portion at room temperature to 50 ° C for 1 to 180 minutes. The development is patterned into a pattern, followed by heat treatment at 1 to 30 ° C to thereby produce a permanent protective film that satisfies the characteristics. As the developer, for example, an organic solvent such as 7-butyrolactone, triethylene glycol dimethyl ether or propylene glycol methyl ether acetate; or a mixture of the above organic solvent and water may be used. For development, a developing device such as a stirring type, a spray type, or a shower type can be used, and ultrasonic irradiation can be performed as necessary. When the photosensitive resin composition of the present invention is used, the preferred metal substrate is, for example, aluminum. The resin composition of the present invention is coated on the base film by coating the composition -23-201009497 with a roll coater, a die coater, a knife coater, a bar coater, a gravure coater or the like. Drying is carried out in a drying oven set at 45 to 100 ° C to remove a specific amount of solvent, and a cover film or the like may be laminated as necessary to form a dry film photoresist. At this time, the thickness of the photoresist on the base film is adjusted to 2 to 100 μm. As the base film and the cover film, for example, a film of polyester, polypropylene, polyethylene, TAC (Triacetyl Cellulose: cellulose triacetate) or polyimine can be used. These films may be used as a film obtained by a release treatment such as a polyoxyalkylene-based release treatment agent or a non-polyoxyalkylene-based release treatment agent, if necessary. When the dry film resist is used, for example, the cover film can be peeled off, and transferred to a substrate at a temperature of 40 to 100 ° C and a pressure of 0.05 to 2 MPa by a manual roll or a laminator to form a liquid photosensitive resin. The exposure is similarly performed, post-exposure baking, development, and heat treatment. When the photosensitive resin composition is supplied as a dry film as described above, the step of applying and drying the support can be omitted, and the photosensitive resin composition of the present invention can be more easily used for pattern formation. . When used as a MEMS package or a semiconductor package, it can be used by forming a coating or forming a hollow structure by the photosensitive resin composition of the present invention. For the MEMS and semiconductor package substrates, a metal film such as aluminum, gold, copper, chromium, or titanium can be formed into a film of various shapes by sputtering or vapor deposition at a film thickness of 10 to 5000 Å. A substrate obtained by finely processing the metal by an etching method or the like on a wafer. Depending on the situation, a film of ruthenium oxide or tantalum nitride is formed as a protective film of inorganic film with a film thickness of 1 〇 to 1 。. Next, a MEMS or semiconductor device is fabricated or disposed on the substrate, and in order to block the device from the external environment, it is necessary to form a coating or to fabricate a hollow structure. When the photosensitive resin composition of the present invention is formed by coating -24 - 201009497, it can be produced by the aforementioned method. In addition, at the time of manufacture, a spacer method can be formed on the substrate by the above method, and a pattern can be formed on the upper layer to form a laminate and a film on the partition wall, thereby forming a hollow package structure, which can be used in response to 130 to 200. The 10~ process is performed in °C to obtain MEMS body package parts that can satisfy various characteristics.所谓 The so-called “package” is a method for sealing gases and liquids that are used to block the external environment in order to maintain the substrate and the properties. The so-called package described in the present invention has a driving unit such as a ME MS, or a hollow package of SAW, and a surface protection or resin sealing for preventing deterioration of a semiconductor substrate, printing, or the like, and the like. Characteristics of the resin composition, such as resolution, thermal stability, drug resistance, and solvent dissolution φ. Adhesion to the substrate after the pressure cooker test (PCT), for example, can be applied to MEMS (Micro Electro Mechanical Systems) parts, microfluids. Parts, μ-TAS (micro-integrated parts, inkjet printer parts, micro-reactor parts, micro-injection forming and screen or stencils for hot stamping models and printing applications, MEMS package parts, BioMEMS and bio Photonic devices, printing, etc. Among them, in particular, MEMS package parts and semi-conductors are made into hollow walls, and then dried by the above-mentioned cover. In addition, 120 minutes of heating package parts, semi-wires, components, etc. are produced. The denseness of the security of the device, such as the brush wiring board and the wiring system used to seal the device, etc., have good image quality, and are highly sensitive and will not Low, so parts, micro-tools analysis system) zero, conductive layer, LIGA impression, useful for fine-grained, semiconductor package zero-wiring wiring board production package -25-201009497 [Embodiment] The following is implemented by The invention is described in detail by way of example only, and is not intended to limit the invention. Examples 1 to 3 and Comparative Example 1 (Preparation of photosensitive resin composition) According to the blending amount (unit: mass parts) described in Table 2, a polyfunctional ring was introduced at 60 ° C by a flask equipped with a stirrer. The oxygen resin, the photocationic polymerization initiator and other components were stirred and mixed for 1 hour to obtain a photosensitive resin composition of the present invention and comparative use. (Formation of Pattern of Photosensitive Resin Composition) Each of the photosensitive resin compositions of Examples 1 to 3 and Comparative Example 1 was applied onto a ruthenium wafer by a spin coater, and then dried to obtain a second The film thickness shown in the table (the "thickness after coating" in the second table means the film thickness after coating and drying) is a photosensitive resin composition layer. This photosensitive resin composition layer was subjected to prebaking at 65 ° C for 5 minutes and at 15 ° C for 15 minutes by means of a hot plate. Then, pattern exposure (soft contact, i-ray) was performed using an i-ray exposure apparatus (mask aligner: manufactured by Ushio Electric Co., Ltd.), and post-exposure baking was performed at 95 ° C for 6 minutes by a hot plate (described below). In the case of "PEB", propylene glycol methyl ether acetate (hereinafter referred to as "PGMEA") was used and developed by a dipping method at 23 t for 5 minutes to obtain a cured resin pattern on a substrate (tantalum wafer). -26-201009497 (Evaluation of Sensitivity of Photosensitive Resin Composition) In the above-mentioned pattern exposure, the sensitivity of each photosensitive resin composition was evaluated by using the exposure amount which is the most excellent in the transfer precision of the mask as the optimum exposure amount. The smaller the optimum exposure, the higher the sensitivity. The results are shown in Table 2 below. (Evaluation of Analytical Property of Photosensitive Resin Composition) Analytical property: In the pattern exposure described above, a photomask having a line of 1, 5, 10, and 20 μm and a pitch was used, and the photoresist pattern was analyzed without generating residue. The thinnest pattern width that is in close contact with the substrate is measured. The results are as shown in the following Table 2 (Evaluation of PCT Acceptability of Photosensitive Resin Composition). A 1000 Å aluminum film is formed on a ruthenium wafer by sputtering, and φ is used in the substrate. Each of the photosensitive resin compositions obtained in Examples 1 to 3 and Comparative Example 1 was formed into the same pattern as described above. Using a warm air convection oven, each test piece was subjected to 15 (TC, 30 minutes hard baking. Then each test piece was placed in a HAST (Highly Accelerated Stress Test) room ( In Espec, it was set at 121 t:, 100% RH, 2 atm, and kept in a constant temperature and humidity state (PCT) for 20 hours. The test piece was taken out and the shape of the pattern shown in Fig. 1 was measured. The adhesion of the pattern is used to evaluate the PCT tolerance. In addition, the shearing force is used to apply force from the side of the pattern, and the shear strength at the time of peeling from the substrate in the -27-201009497 pattern is the adhesion. 〇(Excellent): The adhesion is 50gf or more △(good): the adhesion is 5gf or more and less than 50gf X (not): the adhesion is less than 5 gf (measuring margin is γ [Table 2]

調配成分 實施例 比較例 1 53.5· ος π 1 2 ---- 3 多官能環 氧樹脂 B-1 EPON SU-8 53.5 100 100 B-2 NC-3000H 25.0 B-3 NER-7604 15.0 15.0 光陽離子聚 合起始劑 A-1 GSID26-1 3.0 2.0 — 4.0 PAG-1 CPI-101A 8 0 反應性環 氧單體 C EX-321L 5.0 ------ 5.0 溶劑 D CP 54.5 39.0 39.0 J 52.0 均化劑 E F-470 0.15 0.06 0.06 0.15 偶合劑 F S-510 1.5 1.5 塗佈後的膜厚 Γμιηΐ 25 50 50 25 感度(最適曝光量) rmJ/cm2l 100 130 40 250 最小解析線寬 _ 5 5 5 10 PCT承受性 〇 〇 〇 X 第2表之(A -1 )〜(F )分別如下所示。 (A-1):前述式(1)所表示之光陽離子聚合起始劑 (商品名稱 GSID26-1,Chiba Specialty Chemicals 製) (B-l ):前述式(3)所表示之環氧樹脂(商品名稱 -28- 201009497 EPON-SU-8 * Resolution Performance Products 公司製·· 環氧當量2 1 Og/eq. ’軟化點85 °C ) (B-2):前述式(4)所表示之環氧樹脂(商品名稱 NC-300 0H’日本化藥公司製:環氧當量285g/eq.,軟化 點 65。。) (B-3):前述式(5 )所表示之環氧樹脂(商品名稱 NER-7 6 04,日本化藥公司製:環氧當量347g/eq·,軟化點 ^ 7 1°C ) (PAG-1 ):光陽離子聚合起始劑(聯苯[4-(苯基硫 )苯基]銃鹽=六氟銻酸鹽,商品名稱CPI-101A,San-Apro公司製,50%碳酸丙烯酯溶液) (C ):反應性環氧單體(商品名稱 EX-321L, Nagase Chemtex 公司製) (D):溶劑環戊酮(CP)Formulation Composition Example Comparative Example 1 53.5· ος π 1 2 ---- 3 Multifunctional epoxy resin B-1 EPON SU-8 53.5 100 100 B-2 NC-3000H 25.0 B-3 NER-7604 15.0 15.0 Photocation Polymerization initiator A-1 GSID26-1 3.0 2.0 — 4.0 PAG-1 CPI-101A 8 0 Reactive epoxy monomer C EX-321L 5.0 ------ 5.0 Solvent D CP 54.5 39.0 39.0 J 52.0 Homogenization Agent E F-470 0.15 0.06 0.06 0.15 Coupler F S-510 1.5 1.5 Film thickness after coating Γμιηΐ 25 50 50 25 Sensitivity (optimal exposure) rmJ/cm2l 100 130 40 250 Minimum resolution line width _ 5 5 5 10 PCT withstand 〇〇〇X (A -1 ) to (F ) of Table 2 are as follows. (A-1): Photocationic polymerization initiator (product name: GSID26-1, manufactured by Chiba Specialty Chemicals) (Bl) represented by the above formula (1): epoxy resin represented by the above formula (3) -28- 201009497 EPON-SU-8 * Resolution Performance Products Co., Ltd. · Epoxy equivalent 2 1 Og/eq. 'Softening point 85 °C · (B-2): Epoxy resin represented by the above formula (4) (Product name: NC-300 0H' manufactured by Nippon Kayaku Co., Ltd.: epoxy equivalent: 285 g/eq., softening point: 65.) (B-3): Epoxy resin represented by the above formula (5) (trade name NER- 7 6 04, manufactured by Nippon Kayaku Co., Ltd.: epoxy equivalent 347g/eq·, softening point ^ 7 1°C) (PAG-1): photocationic polymerization initiator (biphenyl [4-(phenylthio))benzene Base 铳 = = hexafluoroantimonate, trade name CPI-101A, made by San-Apro, 50% propylene carbonate solution) (C): Reactive epoxy monomer (trade name EX-321L, Nagase Chemtex ()): Solvent cyclopentanone (CP)

(E ):氟系均化劑(商品名稱Megafac F-470,DIC ❻公司製) (F ):矽烷偶合劑(商品名稱S-510 ’ Chisso公司 製) 如第2表所示,本發明之感光性樹脂組成物(實施例 1〜實施例3 ) ’相較於比較例1,爲高感度且PCT承受性 (對基板的密接性不會降低)較高。 實施例4 (感光性樹脂組成物層合體) -29- 201009497 將上 地塗佈於 Tor ay 公 ϊ 鐘並且在 厚 3 8 μιη g 感光性樹 (感 將前 離,以軋 疊合於砍 樹脂組成 U s h i 〇 電 曝光(軟 4分鐘的 分鐘的顯 圖型。可 好結果。 實施 (感 解析性評 對於 發明之感 述實施例1中所製得之感光性樹脂組成物,均一 膜厚15μιη的聚丙烯(pp)薄膜(基底膜, 司製),藉由暖風對流乾燥機,在65。(:進行5分 80°C進行20分鐘的乾燥後,於暴露面上疊合膜 HJPP薄膜(覆蓋膜),而調製出15 μηι的膜厚之 脂組成物層合體。 光性樹脂組成物層合體的圖型形成) 述所製得之感光性樹脂組成物層合體的覆蓋膜剝 輥溫度70°C、空氣壓力〇.2MPa、速度0.5m/min 晶圓上,重複此操作6次而製得80μπι之感光性 物層。使用i射線曝光裝置(光罩對準器: 機公司製),於此感光性樹脂組成物層進行圖型 式接觸、i射線)。然後藉由加熱板在95 °C進行 PEB,使用PGMEA並藉由浸漬法在23°C進行4 影處理,而在基板(矽晶圓)上製得硬化的樹脂 獲得最適曝光量130mJ/cm2、細線密接5μηι之良 例5〜14 光性樹脂組成物的調製、圖型形成、感度評估、 估及PCT承受性評估) 由第3表及第4表所記載的調配成分所形成之本 光性樹脂組成物,係藉由依據實施例1~3之方法(E): a fluorine-based leveling agent (trade name: Megafac F-470, manufactured by DIC Corporation) (F): a decane coupling agent (trade name: S-510 'manufactured by Chisso Co., Ltd.) As shown in Table 2, the present invention The photosensitive resin composition (Examples 1 to 3) was higher in sensitivity than Comparative Example 1, and the PCT withstandability (the adhesion to the substrate was not lowered) was high. Example 4 (Photosensitive Resin Composition Laminate) -29- 201009497 The upper layer was coated on a Tor ay public clock and a photosensitive tree having a thickness of 3 8 μm η g (the sensation was separated, and the laminate was rolled over the chopped resin) U shi 〇 曝光 ( ( ( ( ( ( ( ( ( ( 软 软 软 软 软 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 Polypropylene (pp) film (base film, manufactured by Sis), laminated with a film HJPP film on a heated surface by a warm air convection dryer at 65. (: 5 minutes at 80 ° C for 20 minutes. (cover film) to prepare a film composition of a film thickness of 15 μm. The pattern of the photoreceptor composition laminate is formed by the film peeling temperature of the obtained photosensitive resin composition laminate. 70 ° C, air pressure 〇 2 MPa, speed 0.5 m / min on the wafer, repeat this operation 6 times to obtain a photosensitive layer of 80 μπι. Using an i-ray exposure device (mask aligner: manufactured by the company) , the photosensitive resin composition layer is patterned , i-ray). Then, PEB was performed at 95 ° C by a hot plate, PGMEA was used, and 4 shadow treatment was performed at 23 ° C by dipping, and a hardened resin was obtained on the substrate (矽 wafer) to obtain an optimum exposure amount. 130mJ/cm2, fine line close to 5μηι, good example 5~14 Preparation, pattern formation, sensitivity evaluation, evaluation of PCT tolerance of optical resin composition) Formed by the blending ingredients described in Tables 3 and 4 The present photo-resin composition is obtained by the methods according to Examples 1 to 3.

-30- 201009497 來評估感度、解析性及PCT承受性。結果如下列第3表 及第4表所示。 [第3表]-30- 201009497 to assess sensitivity, analyticity and PCT affordability. The results are shown in Tables 3 and 4 below. [Table 3]

調配成分 實施例 5 6 7 8 9 多官能環氧測旨 B-1 EPON SU-8 53.5 50 B-2 NC-3000H 25.0 50 B-3 NER-7604 15.0 100 B-4 EOCN-103S 100 B-4 EOCN-4400H 100 光陽離子聚 合起始劑 A-1 GSID26-1 1.0 1.0 1.0 1.0 1.0 反應性環氧單體 C EX-321L 5.0 溶劑 D CP 50.0 50.0 50.0 50.0 50.0 均化劑 E F-470 0.06 0.06 0.06 0.06 0.06 偶合劑 F S-510 1.5 塗佈後的膜厚 Γμπιΐ 25 25 25 25 25 感度(最適曝光量) [mJ/cm2l 250 140 70 100 350 最小解析線寬 ίμπιΐ 5 5 5 5 5 PCT承受性 〇 Δ 〇 〇 Δ -31 - 201009497 [第4表] 調配成分 實施例 10 11 12 13 14 多官能環氧樹脂 B-1 EPON SU-8 90 90 B-5 NC-6300H 100 B-6 EP3698499 100 B-7 EPPN-201-L 100 B-8 EPPN-502H 10 B-10 XD-1000 10 光陽離子聚 合起始劑 A-1 GSID26-1 1.0 1.0 1.0 1.0 1.0 溶劑 D CP 50.0 50.0 50.0 50.0 50.0 均化劑 E F-470 0.06 0.06 0.06 0.06 0.06 塗佈後的膜厚 25 25 25 25 25 感度(最適曝光量) fmJ/cm2l 70 140 80 180 90 最小解析線寬 Γμιηΐ 5 10 5 5 5 PCT承受性 Δ 〇 Δ Δ Δ 第 3 表及第 4 表之(B-l) 、(B-2) 、(B-3)、( A-1 ) 、( C ) 、( D ) 、( E ) 、( F),係使用與實施例 1 ~3所使用者相同。(B - 4 )〜(B - 8 )及(B -1 0 )分別如 下所示。 (B-4):前述式(6 )所表示之環氧樹脂(商品名稱 EOCN-103S,日本化藥公司製:環氧當量214g/eq·,軟化 點83°C ;以及商品名稱EOCN-4400H,曰本化藥公司製: 環氧當量190g/eq.,軟化點6〇°c ) (B-5):前述式(7)所表示之環氧樹脂(商品名稱 NC-6300H ’日本化藥公司製:環氧當量232g/eq ,軟化 點 70〇C ) (B-6):依據日本特許第3698499號公報的合成例 -32- 201009497 2所合成之環氧樹脂(樣本名稱EP3 698499 ’環氧當量 3 50g/eq.) (B-7 ):前述式(9 )所表示之環氧樹脂(商品名稱 EPPN-201-L >曰本化藥公司製:環氧當量190g/eq·,軟化 點 72。。) (B-8 ):前述式(10 )所表示之環氧樹脂(商品名 稱EPPN-502H,日本化藥公司製:環氧當量168g/eq·,軟 ^ 化點60°C ) (B-10):前述式(12)所表示之環氧樹脂(商品名 稱XD-1000,日本化藥公司製:環氧當量252 g/eq·,軟化 點 73〇C ) 如第3表及第4表以及實施例5〜14所示,本發明之 感光性樹脂組成物,相較於比較例1,爲高感度且PCT承 受性(對基板的密接性不會降低)較高。 產業上之可利用性: 本發明之感光性樹脂組成物,對於保有良好的畫像解 析度、熱安定性、耐藥性及溶劑溶解性’爲高感度且在壓 力鍋試驗(PCT )後對基板的密接性不會降低之樹脂圖型 的形成乃爲有用,尤其在MEMS零件、MEMS封裝零件及 半導體封裝等之領域中,乃適合於尺寸安定性高且耐久性 高之樹脂的成形。 【圖式簡單說明】 -33- 201009497 第1圖爲顯示PCT承受性評估中所使用之試驗片的 剖面圖。 【主要元件符號說明】 第1圖中, 1 :去除覆蓋膜及基底膜後之感光性樹脂組成物的層 合體之硬化物 2 :感光性樹脂組成物的硬化物 ❻ 3 :鋁膜(厚度1 000A) 4 :矽晶圓(厚度500^1111) -34-Formulation Composition Example 5 6 7 8 9 Multifunctional Epoxy Test B-1 EPON SU-8 53.5 50 B-2 NC-3000H 25.0 50 B-3 NER-7604 15.0 100 B-4 EOCN-103S 100 B-4 EOCN-4400H 100 Photocationic polymerization initiator A-1 GSID26-1 1.0 1.0 1.0 1.0 1.0 Reactive epoxy monomer C EX-321L 5.0 Solvent D CP 50.0 50.0 50.0 50.0 50.0 Homogenizer E F-470 0.06 0.06 0.06 0.06 0.06 Coupling agent F S-510 1.5 Film thickness after coating Γμπιΐ 25 25 25 25 25 Sensitivity (optimal exposure) [mJ/cm2l 250 140 70 100 350 Minimum resolution line width ίμπιΐ 5 5 5 5 5 PCT withstandability〇 Δ 〇〇Δ -31 - 201009497 [Table 4] Formulation Ingredient Example 10 11 12 13 14 Multifunctional epoxy resin B-1 EPON SU-8 90 90 B-5 NC-6300H 100 B-6 EP3698499 100 B- 7 EPPN-201-L 100 B-8 EPPN-502H 10 B-10 XD-1000 10 Photocationic polymerization initiator A-1 GSID26-1 1.0 1.0 1.0 1.0 1.0 Solvent D CP 50.0 50.0 50.0 50.0 50.0 Homogenizer E F-470 0.06 0.06 0.06 0.06 0.06 Film thickness after coating 25 25 25 25 25 Sensitivity (optimal exposure) fmJ/cm2l 70 140 80 180 90 Minimum resolution line width Γμιηΐ 5 10 5 5 5 PCT withstandability Δ 〇 Δ Δ Δ Tables 3 and 4 (Bl), (B-2), (B-3), (A-1), (C), (D), (E), and (F) are the same as those of the users of Examples 1 to 3. (B - 4) ~ (B - 8) and (B - 1 0 ) are as follows. (B-4): an epoxy resin represented by the above formula (6) (trade name: EOCN-103S, manufactured by Nippon Kayaku Co., Ltd.: epoxy equivalent: 214 g/eq·, softening point: 83 ° C; and trade name EOCN-4400H) , manufactured by Sakamoto Chemical Co., Ltd.: Epoxy equivalent 190g/eq., softening point 6〇°c) (B-5): Epoxy resin represented by the above formula (7) (trade name NC-6300H 'Japan Chemicals Company system: epoxy equivalent 232 g/eq, softening point 70 〇C) (B-6): Epoxy resin synthesized according to Synthesis Example -32-201009497 2 of Japanese Patent No. 3698499 (sample name EP3 698499 'loop Oxygen equivalent 3 50 g/eq.) (B-7): an epoxy resin represented by the above formula (9) (trade name: EPPN-201-L > 曰本化制药公司: epoxy equivalent: 190 g/eq·, Softening point 72.) (B-8): Epoxy resin represented by the above formula (10) (trade name EPPN-502H, manufactured by Nippon Kayaku Co., Ltd.: epoxy equivalent: 168 g/eq·, softening point 60°) C) (B-10): an epoxy resin represented by the above formula (12) (trade name XD-1000, manufactured by Nippon Kayaku Co., Ltd.: epoxy equivalent 252 g/eq·, softening point 73〇C) as in the third Table and Table 4 and Examples 5 to 14 The photosensitive resin composition of the present invention has high sensitivity and high PCT resistance (the adhesion to the substrate is not lowered) as compared with Comparative Example 1. Industrial Applicability: The photosensitive resin composition of the present invention has high sensitivity for maintaining good image resolution, thermal stability, chemical resistance, and solvent solubility, and is applied to a substrate after a pressure cooker test (PCT). It is useful to form a resin pattern in which the adhesion is not lowered, and in particular, in the fields of MEMS parts, MEMS package parts, and semiconductor packages, it is suitable for forming a resin having high dimensional stability and high durability. [Simplified illustration] -33- 201009497 Figure 1 is a cross-sectional view showing the test piece used in the PCT tolerance evaluation. [Description of main component symbols] In Fig. 1, 1: cured material of a laminate of a photosensitive resin composition after removing a cover film and a base film: cured product of a photosensitive resin composition ❻ 3 : aluminum film (thickness 1 000A) 4 : 矽 wafer (thickness 500^1111) -34-

Claims (1)

201009497 七、申請專利範圍: 1 ·一種MEMS用感光性樹脂組成物,爲含有光陽離子 聚合起始劑(A)以及於1分子中具有平均2個以上的環 氧基之環氧樹脂(B)之MEMS用感光性樹脂組成物,其 特徵爲: 前述光陽離子聚合起始劑(A)爲下列式(1)所表示 之光陽離子聚合起始劑(A-1);201009497 VII. Patent application scope: 1 · A photosensitive resin composition for MEMS, which is an epoxy resin containing a photocationic polymerization initiator (A) and an average of two or more epoxy groups in one molecule (B) The photosensitive resin composition for MEMS, characterized in that the photocationic polymerization initiator (A) is a photocationic polymerization initiator (A-1) represented by the following formula (1); 2.如申請專利範圍第1項之MEMS用感光性樹脂組成 ® 物,其中MEMS用感光性樹脂組成物爲封裝用。 3 .如申請專利範圍第1或2項之MEMS用感光性樹脂 組成物,其中環氧樹脂(B)的軟化點爲40 °C以上120 °C 以下,且環氧當量爲150〜500/eq·。 4.如申請專利範圍第1至3項中任一項之MEMS用感 光性樹脂組成物,其中環氧樹脂(B )是從下列式(3 )所 表示之環氧樹脂(B-1 ); -35- 2010094972. The photosensitive resin composition for MEMS according to the first aspect of the patent application, wherein the photosensitive resin composition for MEMS is used for encapsulation. 3. The photosensitive resin composition for MEMS according to claim 1 or 2, wherein the epoxy resin (B) has a softening point of 40 ° C or more and 120 ° C or less, and an epoxy equivalent of 150 to 500 / eq. ·. 4. The photosensitive resin composition for MEMS according to any one of claims 1 to 3, wherein the epoxy resin (B) is an epoxy resin (B-1) represented by the following formula (3); -35- 201009497 3 (式中’ R分別獨立地表示縮水甘油基或氫原子;k爲平 均重複數’係表示位於〇〜30的範圍之實數);及 參 下列式(4 )所表示之環氧樹脂(B-2 ); ΐ化3】3 (wherein 'R each independently represents a glycidyl group or a hydrogen atom; k is an average number of repeats' means a real number in the range of 〇~30); and an epoxy resin represented by the following formula (4) -2 ); ΐ化3] (4) R3 (式中’ R!、R2及R3分別獨立地表示氫原子或具有1〜4 個碳原子之烷基;P爲平均重複數,係表示位於1~30的範 圍之實數);及 下列式(5 )所表示之環氧樹脂(B_3 ); 【化4】 ^ /=ν.〇ΛΔ(4) R3 (wherein R', R2 and R3 each independently represent a hydrogen atom or an alkyl group having 1 to 4 carbon atoms; P is an average repeat number, which means a real number in the range of 1 to 30); And the epoxy resin (B_3) represented by the following formula (5); [Chemical 4] ^ /=ν.〇ΛΔ r5R5 W〇° (5) (式中’ n及m爲平均重複數’係分別獨立地表示位於 1〜30的範圍之實數;R4及R5分別獨立地表示氫原子、具 ❹ -36- 201009497 有1〜4個碳原子之烷基或三氟甲基);及 下列式(6 )所表示之環氧樹脂(B_4 ) 【化5】W〇° (5) (wherein 'n and m are average repeat numbers' are each independently representing a real number in the range of 1 to 30; R4 and R5 each independently represent a hydrogen atom, and have a ❹ -36- 201009497 1 An alkyl group of ~4 carbon atoms or a trifluoromethyl group; and an epoxy resin represented by the following formula (6) (B_4) (式中,η爲平均重複數,係表示位於1~30的範圍之實數 ❹);及 下列式(7 )所表示之環氧樹脂(Β_5 ); 【化6】(wherein η is the average repeat number, which is a real number in the range of 1 to 30); and an epoxy resin (Β_5 ) represented by the following formula (7); © 及使多質子酸酐與下列反應物進行反應而藉此製得之 環氧樹脂(Β-6 ),此反應物爲於1分子中具有至少平均2 個以上的環氧基之環氧化合物與於1分子中具有至少1個 以上的羥基及1個羧基之化合物進行反應而成;及 下列式(9)所表示之環氧樹脂(Β-7); -37- 201009497 【化7】And an epoxy resin (Β-6) obtained by reacting a polyprotonic acid anhydride with the following reactants, the reactant being an epoxy compound having at least an average of 2 or more epoxy groups in one molecule A compound having at least one or more hydroxyl groups and one carboxyl group in one molecule is reacted; and an epoxy resin represented by the following formula (9) (Β-7); -37- 201009497 [Chem. 7] (式中,η爲平均重複數,係表示位於1〜10的範圍之實數 ),·及 下列式(1 〇 )所表示之環氧樹脂(Β-8 ); 【化8】 ©(wherein η is the average repeat number, which is a real number in the range of 1 to 10), and an epoxy resin (Β-8) represented by the following formula (1 〇 ); (式中,η爲平均重複數,係表示位於0.1〜5的範圍之實(where η is the average number of repetitions, which means that it is in the range of 0.1 to 5 數);及 下列式(1 1 )所表示之環氧樹脂(Β-9 ) 【化9】And the epoxy resin (Β-9) represented by the following formula (1 1 ) (式中,l、m 及 η爲平均重複數,係表示位於 -38- 201009497 l + m + n = 2〜60的範圍之實數)·,及 下列式(1 2 )所表示之環氧樹脂(B-1 0 【化1 0】(wherein, l, m and η are the average repeating numbers, which are real numbers in the range of -38 to 201009497 l + m + n = 2 to 60), and the epoxy resin represented by the following formula (1 2 ) (B-1 0 [Chemical 1 0] (12)(12) (式中’ η爲平均重複數,係表示位於〇1~6的範圍之實 數):以及 下列式(1 3 )及/或下列式(丨4 )所表示之化合物與 下列式(1 5 )及/或下列式(〗6 )所表示之化合物的共縮 合物之環氧樹脂(Β-11)所成群中所選擇之1種或2種以 上的環氧樹脂;(wherein η is the average repeat number, which is a real number in the range of 〇1 to 6): and a compound represented by the following formula (1 3 ) and/or the following formula (丨4) and the following formula (1 5 ) And/or one or more epoxy resins selected from the group consisting of epoxy resins (Β-11) of the cocondensate of the compound represented by the following formula (6); 【化1 1】[1 1] och3 shoch3 och3 (13)Och3 shoch3 och3 (13) och3 Si-〇CH3 OCH3 (14) 【化1 2】 /=\ 〇ch3 ^ SrOCH3 (15) 0CH3 och3 H3C-S1-OCH3 (16 ) OCH3 5. —種硬化物,其係使申請專利範圍第l至4項中任 一項之MEMS用感光性樹脂組成物硬化而製得。 6. —種層合體’其係以基材夾持申請專利範圍第〗至 4項中任一項之MEMS用感光性樹脂組成物而成。 7. —種硬化物,其係使申請專利範圍第6項之層合體 -39- 201009497 硬化而製得。Och3 Si-〇CH3 OCH3 (14) [Chemical 1 2] /=\ 〇ch3 ^ SrOCH3 (15) 0CH3 och3 H3C-S1-OCH3 (16 ) OCH3 5. A kind of hardened material, which makes the scope of patent application l The MEMS photosensitive resin composition of any one of the four items is obtained by curing. 6. A laminate of the MEMS photosensitive resin composition according to any one of claims 1-4 to 4, which is a substrate. 7. A hardened material obtained by hardening a laminate of the scope of claim 6 - 39 - 201009497. -40--40-
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