JP2010032991A - Photosensitive resin composition for mems, and cured product thereof - Google Patents
Photosensitive resin composition for mems, and cured product thereof Download PDFInfo
- Publication number
- JP2010032991A JP2010032991A JP2008310573A JP2008310573A JP2010032991A JP 2010032991 A JP2010032991 A JP 2010032991A JP 2008310573 A JP2008310573 A JP 2008310573A JP 2008310573 A JP2008310573 A JP 2008310573A JP 2010032991 A JP2010032991 A JP 2010032991A
- Authority
- JP
- Japan
- Prior art keywords
- resin composition
- formula
- epoxy
- photosensitive resin
- mems
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000011342 resin composition Substances 0.000 title claims abstract description 78
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 72
- 239000003822 epoxy resin Substances 0.000 claims abstract description 71
- 125000003700 epoxy group Chemical group 0.000 claims abstract description 11
- 239000004593 Epoxy Substances 0.000 claims description 42
- 239000003505 polymerization initiator Substances 0.000 claims description 22
- 150000001875 compounds Chemical class 0.000 claims description 15
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 claims description 10
- NAWXUBYGYWOOIX-SFHVURJKSA-N (2s)-2-[[4-[2-(2,4-diaminoquinazolin-6-yl)ethyl]benzoyl]amino]-4-methylidenepentanedioic acid Chemical compound C1=CC2=NC(N)=NC(N)=C2C=C1CCC1=CC=C(C(=O)N[C@@H](CC(=C)C(O)=O)C(O)=O)C=C1 NAWXUBYGYWOOIX-SFHVURJKSA-N 0.000 claims description 6
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 125000000217 alkyl group Chemical group 0.000 claims description 5
- 125000004432 carbon atom Chemical group C* 0.000 claims description 4
- YZCKVEUIGOORGS-IGMARMGPSA-N Protium Chemical compound [1H] YZCKVEUIGOORGS-IGMARMGPSA-N 0.000 claims description 2
- 150000008065 acid anhydrides Chemical class 0.000 claims description 2
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 2
- 239000007795 chemical reaction product Substances 0.000 claims description 2
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 claims description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 2
- 150000007519 polyprotic acids Polymers 0.000 claims description 2
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract description 34
- 239000002904 solvent Substances 0.000 abstract description 19
- 239000000126 substance Substances 0.000 abstract description 12
- 238000012360 testing method Methods 0.000 abstract description 12
- 239000003999 initiator Substances 0.000 abstract description 7
- 238000012663 cationic photopolymerization Methods 0.000 abstract description 5
- 239000010408 film Substances 0.000 description 35
- 239000004065 semiconductor Substances 0.000 description 15
- 238000000034 method Methods 0.000 description 13
- 239000000203 mixture Substances 0.000 description 13
- 239000000047 product Substances 0.000 description 13
- 229920005989 resin Polymers 0.000 description 12
- 239000011347 resin Substances 0.000 description 12
- 239000003795 chemical substances by application Substances 0.000 description 10
- 238000002156 mixing Methods 0.000 description 10
- -1 sulfonium hexafluoroantimonate Chemical compound 0.000 description 10
- 230000035945 sensitivity Effects 0.000 description 9
- 238000011156 evaluation Methods 0.000 description 8
- 239000000178 monomer Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 239000013039 cover film Substances 0.000 description 6
- BGTOWKSIORTVQH-UHFFFAOYSA-N cyclopentanone Chemical compound O=C1CCCC1 BGTOWKSIORTVQH-UHFFFAOYSA-N 0.000 description 6
- 239000007788 liquid Substances 0.000 description 6
- 238000000059 patterning Methods 0.000 description 6
- 229910052801 chlorine Inorganic materials 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 5
- 239000007787 solid Substances 0.000 description 5
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 4
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 4
- 239000004743 Polypropylene Substances 0.000 description 4
- 239000006087 Silane Coupling Agent Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000000460 chlorine Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000011161 development Methods 0.000 description 4
- 230000018109 developmental process Effects 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000003960 organic solvent Substances 0.000 description 4
- 239000003208 petroleum Substances 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 229920001155 polypropylene Polymers 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 125000001424 substituent group Chemical group 0.000 description 4
- BTJPUDCSZVCXFQ-UHFFFAOYSA-N 2,4-diethylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(CC)=CC(CC)=C3SC2=C1 BTJPUDCSZVCXFQ-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- 0 CC(C)(c(cc1)ccc1O*)c(cc1)ccc1O* Chemical compound CC(C)(c(cc1)ccc1O*)c(cc1)ccc1O* 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 230000002411 adverse Effects 0.000 description 3
- 239000002518 antifoaming agent Substances 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 239000003086 colorant Substances 0.000 description 3
- 238000004049 embossing Methods 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 230000000704 physical effect Effects 0.000 description 3
- 229920001296 polysiloxane Polymers 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 229920005992 thermoplastic resin Polymers 0.000 description 3
- 239000002562 thickening agent Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 125000004178 (C1-C4) alkyl group Chemical group 0.000 description 2
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 2
- XSRJGDTUAPJMQP-UHFFFAOYSA-N C(C1OC1)OC1=CC=CCC1 Chemical compound C(C1OC1)OC1=CC=CCC1 XSRJGDTUAPJMQP-UHFFFAOYSA-N 0.000 description 2
- OFOXGADZNGVZOX-UHFFFAOYSA-N CCC1C(CC2)CC2C1CC Chemical compound CCC1C(CC2)CC2C1CC OFOXGADZNGVZOX-UHFFFAOYSA-N 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 125000003545 alkoxy group Chemical group 0.000 description 2
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 description 2
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 2
- 150000001768 cations Chemical class 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000007822 coupling agent Substances 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000004615 ingredient Substances 0.000 description 2
- 239000011256 inorganic filler Substances 0.000 description 2
- 229910003475 inorganic filler Inorganic materials 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- 238000000520 microinjection Methods 0.000 description 2
- 229920003986 novolac Polymers 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 150000002989 phenols Chemical class 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- UOHMMEJUHBCKEE-UHFFFAOYSA-N prehnitene Chemical compound CC1=CC=C(C)C(C)=C1C UOHMMEJUHBCKEE-UHFFFAOYSA-N 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- DQZNLOXENNXVAD-UHFFFAOYSA-N trimethoxy-[2-(7-oxabicyclo[4.1.0]heptan-4-yl)ethyl]silane Chemical compound C1C(CC[Si](OC)(OC)OC)CCC2OC21 DQZNLOXENNXVAD-UHFFFAOYSA-N 0.000 description 2
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 1
- 125000000229 (C1-C4)alkoxy group Chemical group 0.000 description 1
- ZIKLJUUTSQYGQI-UHFFFAOYSA-N 1-ethoxy-2-(2-ethoxypropoxy)propane Chemical compound CCOCC(C)OCC(C)OCC ZIKLJUUTSQYGQI-UHFFFAOYSA-N 0.000 description 1
- KJCVRFUGPWSIIH-UHFFFAOYSA-N 1-naphthol Chemical class C1=CC=C2C(O)=CC=CC2=C1 KJCVRFUGPWSIIH-UHFFFAOYSA-N 0.000 description 1
- BRKORVYTKKLNKX-UHFFFAOYSA-N 2,4-di(propan-2-yl)thioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(C(C)C)=CC(C(C)C)=C3SC2=C1 BRKORVYTKKLNKX-UHFFFAOYSA-N 0.000 description 1
- LCHAFMWSFCONOO-UHFFFAOYSA-N 2,4-dimethylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(C)=CC(C)=C3SC2=C1 LCHAFMWSFCONOO-UHFFFAOYSA-N 0.000 description 1
- MOBNLCPBAMKACS-UHFFFAOYSA-N 2-(1-chloroethyl)oxirane Chemical class CC(Cl)C1CO1 MOBNLCPBAMKACS-UHFFFAOYSA-N 0.000 description 1
- FPZWZCWUIYYYBU-UHFFFAOYSA-N 2-(2-ethoxyethoxy)ethyl acetate Chemical compound CCOCCOCCOC(C)=O FPZWZCWUIYYYBU-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- HSDVRWZKEDRBAG-UHFFFAOYSA-N 2-[1-(oxiran-2-ylmethoxy)hexoxymethyl]oxirane Chemical compound C1OC1COC(CCCCC)OCC1CO1 HSDVRWZKEDRBAG-UHFFFAOYSA-N 0.000 description 1
- AOBIOSPNXBMOAT-UHFFFAOYSA-N 2-[2-(oxiran-2-ylmethoxy)ethoxymethyl]oxirane Chemical compound C1OC1COCCOCC1CO1 AOBIOSPNXBMOAT-UHFFFAOYSA-N 0.000 description 1
- SEFYJVFBMNOLBK-UHFFFAOYSA-N 2-[2-[2-(oxiran-2-ylmethoxy)ethoxy]ethoxymethyl]oxirane Chemical compound C1OC1COCCOCCOCC1CO1 SEFYJVFBMNOLBK-UHFFFAOYSA-N 0.000 description 1
- PLDLPVSQYMQDBL-UHFFFAOYSA-N 2-[[3-(oxiran-2-ylmethoxy)-2,2-bis(oxiran-2-ylmethoxymethyl)propoxy]methyl]oxirane Chemical compound C1OC1COCC(COCC1OC1)(COCC1OC1)COCC1CO1 PLDLPVSQYMQDBL-UHFFFAOYSA-N 0.000 description 1
- NQBXSWAWVZHKBZ-UHFFFAOYSA-N 2-butoxyethyl acetate Chemical compound CCCCOCCOC(C)=O NQBXSWAWVZHKBZ-UHFFFAOYSA-N 0.000 description 1
- SQLIUQWZSOABAR-UHFFFAOYSA-N 2-chloro-9,10-dimethoxyanthracene Chemical compound ClC1=CC=C2C(OC)=C(C=CC=C3)C3=C(OC)C2=C1 SQLIUQWZSOABAR-UHFFFAOYSA-N 0.000 description 1
- ZCDADJXRUCOCJE-UHFFFAOYSA-N 2-chlorothioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(Cl)=CC=C3SC2=C1 ZCDADJXRUCOCJE-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- SURWYRGVICLUBJ-UHFFFAOYSA-N 2-ethyl-9,10-dimethoxyanthracene Chemical compound C1=CC=CC2=C(OC)C3=CC(CC)=CC=C3C(OC)=C21 SURWYRGVICLUBJ-UHFFFAOYSA-N 0.000 description 1
- BDPJILVXUVJWBF-UHFFFAOYSA-N 2-ethyl-9,10-dipropoxyanthracene Chemical compound CCC1=CC=C2C(OCCC)=C(C=CC=C3)C3=C(OCCC)C2=C1 BDPJILVXUVJWBF-UHFFFAOYSA-N 0.000 description 1
- KTALPKYXQZGAEG-UHFFFAOYSA-N 2-propan-2-ylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(C(C)C)=CC=C3SC2=C1 KTALPKYXQZGAEG-UHFFFAOYSA-N 0.000 description 1
- OXYZDRAJMHGSMW-UHFFFAOYSA-N 3-chloropropyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)CCCCl OXYZDRAJMHGSMW-UHFFFAOYSA-N 0.000 description 1
- VATRWWPJWVCZTA-UHFFFAOYSA-N 3-oxo-n-[2-(trifluoromethyl)phenyl]butanamide Chemical compound CC(=O)CC(=O)NC1=CC=CC=C1C(F)(F)F VATRWWPJWVCZTA-UHFFFAOYSA-N 0.000 description 1
- MECNWXGGNCJFQJ-UHFFFAOYSA-N 3-piperidin-1-ylpropane-1,2-diol Chemical compound OCC(O)CN1CCCCC1 MECNWXGGNCJFQJ-UHFFFAOYSA-N 0.000 description 1
- LVNLBBGBASVLLI-UHFFFAOYSA-N 3-triethoxysilylpropylurea Chemical compound CCO[Si](OCC)(OCC)CCCNC(N)=O LVNLBBGBASVLLI-UHFFFAOYSA-N 0.000 description 1
- UUEWCQRISZBELL-UHFFFAOYSA-N 3-trimethoxysilylpropane-1-thiol Chemical compound CO[Si](OC)(OC)CCCS UUEWCQRISZBELL-UHFFFAOYSA-N 0.000 description 1
- XDLMVUHYZWKMMD-UHFFFAOYSA-N 3-trimethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C(C)=C XDLMVUHYZWKMMD-UHFFFAOYSA-N 0.000 description 1
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical group [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- KSMGAOMUPSQGTB-UHFFFAOYSA-N 9,10-dibutoxyanthracene Chemical compound C1=CC=C2C(OCCCC)=C(C=CC=C3)C3=C(OCCCC)C2=C1 KSMGAOMUPSQGTB-UHFFFAOYSA-N 0.000 description 1
- FUWFDADDJOUNDL-UHFFFAOYSA-N 9,10-diethoxy-2-ethylanthracene Chemical compound CCC1=CC=C2C(OCC)=C(C=CC=C3)C3=C(OCC)C2=C1 FUWFDADDJOUNDL-UHFFFAOYSA-N 0.000 description 1
- GJNKQJAJXSUJBO-UHFFFAOYSA-N 9,10-diethoxyanthracene Chemical compound C1=CC=C2C(OCC)=C(C=CC=C3)C3=C(OCC)C2=C1 GJNKQJAJXSUJBO-UHFFFAOYSA-N 0.000 description 1
- JWJMBKSFTTXMLL-UHFFFAOYSA-N 9,10-dimethoxyanthracene Chemical compound C1=CC=C2C(OC)=C(C=CC=C3)C3=C(OC)C2=C1 JWJMBKSFTTXMLL-UHFFFAOYSA-N 0.000 description 1
- LBQJFQVDEJMUTF-UHFFFAOYSA-N 9,10-dipropoxyanthracene Chemical compound C1=CC=C2C(OCCC)=C(C=CC=C3)C3=C(OCCC)C2=C1 LBQJFQVDEJMUTF-UHFFFAOYSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical group [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- FQYUMYWMJTYZTK-UHFFFAOYSA-N C(C1OC1)Oc1ccccc1 Chemical compound C(C1OC1)Oc1ccccc1 FQYUMYWMJTYZTK-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- BRLQWZUYTZBJKN-UHFFFAOYSA-N Epichlorohydrin Chemical compound ClCC1CO1 BRLQWZUYTZBJKN-UHFFFAOYSA-N 0.000 description 1
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical class OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 229910018286 SbF 6 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical class [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- 150000001454 anthracenes Chemical class 0.000 description 1
- 150000001463 antimony compounds Chemical class 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 125000004106 butoxy group Chemical group [*]OC([H])([H])C([H])([H])C(C([H])([H])[H])([H])[H] 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 125000001309 chloro group Chemical group Cl* 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000004927 clay Substances 0.000 description 1
- 229910052570 clay Inorganic materials 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 1
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- QPAQOQRHCLJMIL-UHFFFAOYSA-N diethoxy(propan-2-yloxy)alumane Chemical compound CCO[Al](OCC)OC(C)C QPAQOQRHCLJMIL-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
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- 238000010894 electron beam technology Methods 0.000 description 1
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- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 description 1
- WOXXJEVNDJOOLV-UHFFFAOYSA-N ethenyl-tris(2-methoxyethoxy)silane Chemical compound COCCO[Si](OCCOC)(OCCOC)C=C WOXXJEVNDJOOLV-UHFFFAOYSA-N 0.000 description 1
- 125000001301 ethoxy group Chemical group [H]C([H])([H])C([H])([H])O* 0.000 description 1
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- 239000007789 gas Substances 0.000 description 1
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- 229910052737 gold Inorganic materials 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 150000003944 halohydrins Chemical class 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
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- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
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- 229910052740 iodine Inorganic materials 0.000 description 1
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- ZLNQQNXFFQJAID-UHFFFAOYSA-L magnesium carbonate Chemical compound [Mg+2].[O-]C([O-])=O ZLNQQNXFFQJAID-UHFFFAOYSA-L 0.000 description 1
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- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 1
- AMJQWOUMLAWIEA-UHFFFAOYSA-N methyl 9,10-diethoxyanthracene-2-sulfonate methyl 9,10-dimethoxyanthracene-2-sulfonate Chemical compound COc1c2ccccc2c(OC)c2cc(ccc12)S(=O)(=O)OC.CCOc1c2ccccc2c(OCC)c2cc(ccc12)S(=O)(=O)OC AMJQWOUMLAWIEA-UHFFFAOYSA-N 0.000 description 1
- GRURXNZQEMTGGF-UHFFFAOYSA-N methyl 9,10-dimethoxyanthracene-2-carboxylate Chemical compound C1=CC=CC2=C(OC)C3=CC(C(=O)OC)=CC=C3C(OC)=C21 GRURXNZQEMTGGF-UHFFFAOYSA-N 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 229910052901 montmorillonite Inorganic materials 0.000 description 1
- PHQOGHDTIVQXHL-UHFFFAOYSA-N n'-(3-trimethoxysilylpropyl)ethane-1,2-diamine Chemical compound CO[Si](OC)(OC)CCCNCCN PHQOGHDTIVQXHL-UHFFFAOYSA-N 0.000 description 1
- NXPPAOGUKPJVDI-UHFFFAOYSA-N naphthalene-1,2-diol Chemical class C1=CC=CC2=C(O)C(O)=CC=C21 NXPPAOGUKPJVDI-UHFFFAOYSA-N 0.000 description 1
- 150000004780 naphthols Chemical class 0.000 description 1
- SLCVBVWXLSEKPL-UHFFFAOYSA-N neopentyl glycol Chemical compound OCC(C)(C)CO SLCVBVWXLSEKPL-UHFFFAOYSA-N 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- UZRUZACOSHWLOC-UHFFFAOYSA-M phenoxyaluminum Chemical compound [Al]OC1=CC=CC=C1 UZRUZACOSHWLOC-UHFFFAOYSA-M 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 108010001861 pregnancy-associated glycoprotein 1 Proteins 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 125000002572 propoxy group Chemical group [*]OC([H])([H])C(C([H])([H])[H])([H])[H] 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- GQIUQDDJKHLHTB-UHFFFAOYSA-N trichloro(ethenyl)silane Chemical compound Cl[Si](Cl)(Cl)C=C GQIUQDDJKHLHTB-UHFFFAOYSA-N 0.000 description 1
- YFNKIDBQEZZDLK-UHFFFAOYSA-N triglyme Chemical compound COCCOCCOCCOC YFNKIDBQEZZDLK-UHFFFAOYSA-N 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000005050 vinyl trichlorosilane Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/68—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the catalysts used
- C08G59/687—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the catalysts used containing sulfur
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
- C08G59/32—Epoxy compounds containing three or more epoxy groups
- C08G59/3218—Carbocyclic compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
Abstract
Description
本発明は、感光画像形成性エポキシ樹脂組成物及びその永久硬化生成物であって、紫外(UV)リソグラフィにより加工したり、又は熱エンボスを使用してインプリントすることの出来る、MEMS(微小電子機械システム)部品、マイクロマシン部品、マイクロ流体部品、μ−TAS(微小全分析システム)部品、インクジェットプリンター部品、マイクロ反応器部品、導電性層、LIGA部品、微小射出成形及び熱エンボス向け型及びスタンプ、微細印刷用途向けスクリーン又はステンシル、MEMSパッケージ部品、半導体パッケージ部品、BioMEMS及びバイオフォトニックデバイス、並びにプリント配線板の製作において有用である組成物及びその積層体並びにそれらの硬化物に関する。 The present invention relates to a photoimageable epoxy resin composition and a permanent cured product thereof, which can be processed by ultraviolet (UV) lithography or imprinted using hot embossing. Mechanical system) parts, micro machine parts, micro fluid parts, μ-TAS (micro total analysis system) parts, inkjet printer parts, micro reactor parts, conductive layers, LIGA parts, molds and stamps for micro injection molding and hot embossing, The present invention relates to screens or stencils for fine printing applications, MEMS package parts, semiconductor package parts, BioMEMS and biophotonic devices, and compositions useful in the production of printed wiring boards and laminates thereof and cured products thereof.
フォトリソグラフィー加工可能なレジストは、最近半導体やMEMS・マイクロマシンアプリケーションに広範に用いられている。このようなアプリケーションでは、フォトリソグラフィー加工は基板上でパターニング露光し、ついで、現像液で現像することで露光領域もしくは非露光領域を選択的に除去することで達成される。フォトリソグラフィー加工可能なレジスト(フォトレジスト)にはポジ又はネガタイプがあり、露光によって現像液に溶解するようになるものがポジタイプであり、同じく不溶となるものがネガタイプである。先端のエレクトロパッケージアプリケーションやMEMSアプリケーションでは均一なスピンコーティング膜の形成能だけではなく、高アスペクト比、厚膜におけるストレートな側壁形状、基板への高密着性等が要求される。ここで、アスペクト比とは、レジスト膜厚/パターン線幅により算出され、フォトリソグラフィーの性能を示す重要な特性である。 Photolithographically processable resists have recently been widely used in semiconductor and MEMS / micromachine applications. In such an application, photolithography is achieved by patterning exposure on a substrate and then developing with a developer to selectively remove exposed or non-exposed areas. Resist (photoresist) that can be processed by photolithography includes a positive type or a negative type, a type that can be dissolved in a developing solution by exposure is a positive type, and a type that is also insoluble is a negative type. Advanced electro-package applications and MEMS applications require not only the ability to form a uniform spin coating film, but also a high aspect ratio, a straight sidewall shape in a thick film, and high adhesion to a substrate. Here, the aspect ratio is an important characteristic calculated by resist film thickness / pattern line width and showing the performance of photolithography.
このようなフォトレジストとしては、多官能ビスフェノールAノボラック型エポキシ樹脂(商品名 EPON SU−8レジン、レゾリューション・パフォーマンス・プロダクツ製)及びダウケミカル製 CYRACURE UVI−6974のような光カチオン重合開始剤(この光カチオン重合開始剤は芳香族スルフォニウムヘキサフルオロアンチモネートのプロピレンカーボネート溶液からなる)からなるネガタイプの化学増幅型フォトレジスト組成物が知られている。該フォトレジスト組成物は350〜450nmの波長域に非常に低い光吸収を持つことから、厚膜フォトリソグラフィー加工可能なフォトレジスト組成物として知られている。このフォトレジスト組成物は、種々の基板上にスピンコートもしくはカーテンコートし、ついでベーキングにより溶剤を揮発させ、100μmもしくはそれ以上の厚みの固体フォトレジスト層を形成し、さらにコンタクト露光、プロキシミティ露光又はプロジェクション露光などの各種露光方法を用いて、フォトマスクを通して近紫外光を照射することでフォトリソグラフィー加工される。続いて、現像液中に浸漬し、非露光領域を溶解させることで、基板上に高解像なフォトマスクのネガイメージを形成することができる。 Such photoresists include polycationic bisphenol A novolak type epoxy resins (trade name EPON SU-8 resin, manufactured by Resolution Performance Products) and photocation polymerization initiators such as CYRACURE UVI-6974 manufactured by Dow Chemical. There is known a negative-type chemically amplified photoresist composition comprising (this photocationic polymerization initiator is composed of a propylene carbonate solution of aromatic sulfonium hexafluoroantimonate). Since the photoresist composition has very low light absorption in the wavelength range of 350 to 450 nm, it is known as a photoresist composition that can be processed by thick film photolithography. This photoresist composition is spin-coated or curtain-coated on various substrates, and then the solvent is evaporated by baking to form a solid photoresist layer having a thickness of 100 μm or more, and further contact exposure, proximity exposure or Photolithographic processing is performed by irradiating near ultraviolet light through a photomask using various exposure methods such as projection exposure. Subsequently, a negative image of a high-resolution photomask can be formed on the substrate by immersing in a developing solution and dissolving the non-exposed areas.
例えば、特許文献1には、特定のエポキシ樹脂を配合することにより、EPON SU−8レジン系配合物の良好な画像解像度、熱安定性、耐薬品性及び溶媒性等の特性を維持し、同時に接着性、層間剥離、亀裂、クレイジング、応力及び柔軟性等の特性を向上させる手法が開示されている。しかしながら、該発明の組成物に含有される光カチオン重合開始剤に関しての記載はなく、光カチオン重合開始剤の違いによるプレッシャークッカー試験(PCT)後の密着性に関しても何ら言及されていない。
For example,
一方、MEMS部品やMEMS及び半導体パッケージ等の分野では、パッケージ材料の物性が大きくデバイスの信頼性に影響を与えることが知られている。MEMS及び半導体素子は、周囲の温度や湿度の変化あるいは微細なごみや埃に大きく影響され、その特性を劣化させてしまい、また機械的振動や衝撃を受けることにより破損しやすい。これら外的要因からMEMS及び半導体素子を保護するために、セラミックス製の箱や樹脂で封止し、パッケージとして使用に供されていることは良く知られている。 On the other hand, in the field of MEMS parts, MEMS, and semiconductor packages, it is known that the physical properties of the package material are large and affect the reliability of the device. MEMS and semiconductor elements are greatly affected by changes in ambient temperature and humidity, or fine dust and dirt, which deteriorate their characteristics and are easily damaged by mechanical vibrations and impacts. In order to protect MEMS and semiconductor elements from these external factors, it is well known that they are sealed in a ceramic box or resin and used as a package.
この中空タイプのパッケージを製造するにあたり、金属やセラミックスを用いる気密封止方式の場合、本質的に非透湿であるが、製造コストが高い、寸法精度が悪いなどの欠点も有する。これに対して樹脂封止の場合、製造コストは比較的低く、寸法精度も高いが、樹脂は基本的に水分拡散係数を有しており、時間が経つと徐々に水分を通過させ、半導体素子の特性を劣化させたり、気密性を保持したパッケージ内部に浸透した水分がガラス面を結露させたりし、信頼性に欠けるといった問題点があった(特許文献2)。 In manufacturing this hollow type package, the hermetic sealing method using metal or ceramics is essentially non-moisture permeable, but has disadvantages such as high manufacturing cost and poor dimensional accuracy. On the other hand, in the case of resin sealing, the manufacturing cost is relatively low and the dimensional accuracy is high, but the resin basically has a moisture diffusion coefficient, and gradually passes moisture over time, so that the semiconductor element There is a problem in that the characteristics of the glass are deteriorated or moisture permeated into the inside of the package maintaining airtightness causes the glass surface to condense, resulting in lack of reliability (Patent Document 2).
ノボラック型エポキシ樹脂などの多官能エポキシ樹脂を用いた従来の感光性樹脂組成物では、含有する光カチオン重合開始剤の感度が低いため、大量の開始剤を含有することが必要であったり、短時間でマスクパターンを樹脂パターンに忠実に再現できないという問題点があった。また、六フッ化アンチモン酸イオン(SbF6 -)を含有する光カチオン重合開始剤は比較的高感度ではあるが、毒性の問題から使用用途が限定されるといった問題もあった。一方で、MEMS部品やMEMS及び半導体パッケージ等の分野では樹脂組成物の耐湿性等の理由により、経時的に密着力の低下が生じデバイスの信頼性を大きく低下させるという問題があった。 In the conventional photosensitive resin composition using a polyfunctional epoxy resin such as a novolak-type epoxy resin, the sensitivity of the photocation polymerization initiator contained is low, so that it is necessary to contain a large amount of initiator or a short amount of initiator. There was a problem that the mask pattern could not be faithfully reproduced in time. Moreover, although the photocationic polymerization initiator containing hexafluoroantimonate ion (SbF 6 − ) is relatively high in sensitivity, there is a problem in that its use is limited due to toxicity problems. On the other hand, in the field of MEMS parts, MEMS, and semiconductor packages, there has been a problem that due to the moisture resistance of the resin composition and the like, the adhesive force decreases with time and the reliability of the device is greatly reduced.
本発明は、以上のような従来の事情に鑑みてなされたものであって、その課題は、良好な画像解像度、熱安定性、耐薬品性及び溶媒溶解性を有し、高感度でかつプレッシャークッカー試験(PCT)後の基板への密着性が低下しない感光性樹脂組成物を提供することを目的する。 The present invention has been made in view of the conventional circumstances as described above, and its problems are that it has good image resolution, thermal stability, chemical resistance and solvent solubility, and is highly sensitive and pressure-sensitive. It aims at providing the photosensitive resin composition which the adhesiveness to the board | substrate after a cooker test (PCT) does not fall.
本発明者らは、上記課題を解決するために、鋭意、検討を重ねた結果、特定のエポキシ樹脂と特定の光カチオン重合開始剤とを組み合わせて感光性樹脂組成物を調製し、この感光性樹脂組成物を使用して樹脂パターンを形成すれば、高感度でプレッシャークッカー試験後の基板への密着性が低下しないパターンを形成できることを見出した。 In order to solve the above-mentioned problems, the present inventors have intensively studied and, as a result, prepared a photosensitive resin composition by combining a specific epoxy resin and a specific photocationic polymerization initiator. It has been found that if a resin pattern is formed using a resin composition, it is possible to form a highly sensitive pattern that does not deteriorate the adhesion to the substrate after the pressure cooker test.
即ち、本発明は、
(1)光カチオン重合開始剤(A)と1分子中に2個以上のエポキシ基を有するエポキシ樹脂(B)を含有してなるMEMS用感光性樹脂組成物であって、光カチオン重合開始剤(A)が下記式(1)
That is, the present invention
(1) A photosensitive resin composition for MEMS comprising a cationic photopolymerization initiator (A) and an epoxy resin (B) having two or more epoxy groups in one molecule, the cationic photopolymerization initiator (A) is the following formula (1)
で表される光カチオン重合開始剤(A−1)であるMEMS用感光性樹脂組成物、
(2)MEMS用感光性樹脂組成物がパッケージ用である前項(1)に記載のMEMS用感光性樹脂組成物、
(3)エポキシ樹脂(B)の軟化点が40℃以上120℃以下かつエポキシ当量が150〜500/eq.である前項(1)または(2)に記載のMEMS用感光性樹脂組成物、
(4)エポキシ樹脂(B)が下記式(3)
A photosensitive resin composition for MEMS, which is a photocationic polymerization initiator (A-1) represented by:
(2) The photosensitive resin composition for MEMS according to (1), wherein the photosensitive resin composition for MEMS is for a package;
(3) The softening point of the epoxy resin (B) is 40 ° C. or higher and 120 ° C. or lower and the epoxy equivalent is 150 to 500 / eq. The photosensitive resin composition for MEMS according to the preceding item (1) or (2),
(4) The epoxy resin (B) has the following formula (3)
(式(3)において、Rはそれぞれ独立にグリシジル基又は水素原子を示す。kは平均値を示し、0〜30の範囲にある実数である。)で表されるエポキシ樹脂(B−1)、
下記式(4)
(In Formula (3), each R independently represents a glycidyl group or a hydrogen atom. K represents an average value and is a real number in the range of 0 to 30) (B-1) ,
Following formula (4)
(式(4)において、各R1、R2、及びR3は、それぞれ独立に水素原子又は炭素原子1〜4個を有するアルキル基を示す。pは平均値を示し1〜30の範囲にある実数である。)で表されるエポキシ樹脂(B−2)、
下記式(5)
(In the formula (4), each R 1, R 2, and R 3, .p represents an alkyl group having independently from one to four hydrogen atoms or carbon atoms in the range of 1 to 30 shows the average value An epoxy resin (B-2) represented by
Following formula (5)
(式(5)において、n及びmは平均値を示し、独立に1〜30の範囲にある実数であり、R4及びR5は、それぞれ独立に水素原子、炭素原子1〜4個を有するアルキル基又はトリフルオロメチルを示す。)で表されるエポキシ樹脂(B−3)、
下記式(6)
(In Formula (5), n and m are average numbers and are independently real numbers in the range of 1 to 30, and R 4 and R 5 each independently have a hydrogen atom or 1 to 4 carbon atoms. An epoxy group (B-3) represented by an alkyl group or trifluoromethyl),
Following formula (6)
(式(6)において、nは平均値を示し、1〜30の範囲にある実数である。)で表されるエポキシ樹脂(B−4)、
下記式(7)
(In Formula (6), n shows an average value and is a real number in the range of 1 to 30).
Following formula (7)
で表されるエポキシ樹脂(B−5)、
1分子中に少なくとも2個以上のエポキシ基を有するエポキシ化合物と1分子中に少なくとも1個以上の水酸基と1個のカルボキシル基を有する化合物との反応物に、多塩基酸無水物を反応させることにより得られるエポキシ樹脂(B−6)、
下記式(9)
An epoxy resin (B-5) represented by
Reacting a polybasic acid anhydride with a reaction product of an epoxy compound having at least two epoxy groups in one molecule and a compound having at least one hydroxyl group and one carboxyl group in one molecule; Epoxy resin (B-6) obtained by
Following formula (9)
(式(9)において、nは平均値を示し、1〜10の範囲にある実数である。)で表されるエポキシ樹脂(B−7)、
下記式(10)
(In Formula (9), n represents an average value and is a real number in the range of 1 to 10.) represented by an epoxy resin (B-7),
Following formula (10)
(式(10)において、nは平均値を示し、0.1〜5の範囲にある実数である。)で表されるエポキシ樹脂(B−8)、
下記式(11)
(In the formula (10), n represents an average value and is a real number in the range of 0.1 to 5) represented by the epoxy resin (B-8),
Following formula (11)
(式(11)において、l、m及びnは平均値を示し、l+m+n=2〜60の範囲にある実数である。)で表されるエポキシ樹脂(B−9)、
下記式(12)
(In the formula (11), l, m and n represent average values and are real numbers in the range of l + m + n = 2 to 60) (B-9),
Following formula (12)
(式(12)において、nは平均値を示し、0.1〜6の範囲にある実数である。)で表されるエポキシ樹脂(B−10)並びに
下記式(13)及び/又は式(14)
(In Formula (12), n represents an average value and is a real number in the range of 0.1 to 6). The epoxy resin (B-10) and the following Formula (13) and / or Formula ( 14)
で示される化合物と、下記式(15)及び/又は式(16) And a compound represented by the following formula (15) and / or formula (16):
で示される化合物との共縮合物であるエポキシ樹脂(B−11)からなる群から選択される1種類又は2種類以上のエポキシ樹脂である前項(1)乃至(3)のいずれか一項に記載のMEMS用感光性樹脂組成物、
(5)前項(1)乃至(4)のいずれか一項に記載のMEMS用感光性樹脂組成物を硬化して得られる硬化物、
(6)前項(1)乃至(4)のいずれか一項に記載のMEMS用感光性樹脂組成物を基材で挟み込んだ積層体、
(7)前項(6)に記載の積層体を硬化して得られる硬化物、
に関する。
Any one of the above items (1) to (3), which is one type or two or more types of epoxy resins selected from the group consisting of epoxy resins (B-11) which are co-condensates with compounds represented by The photosensitive resin composition for MEMS as described,
(5) A cured product obtained by curing the photosensitive resin composition for MEMS according to any one of (1) to (4) above,
(6) A laminate in which the MEMS photosensitive resin composition according to any one of (1) to (4) is sandwiched between substrates,
(7) A cured product obtained by curing the laminate according to (6) above,
About.
本発明による感光性樹脂組成物は、良好な画像解像度、熱安定性、耐薬品及び溶媒溶解性を有し、高感度でかつプレッシャークッカー試験(PCT)後の基板への密着性が低下しない特徴を有しているので、MEMS用感光性樹脂組成物として好適に用いられる。 The photosensitive resin composition according to the present invention has good image resolution, thermal stability, chemical resistance and solvent solubility, is highly sensitive and does not deteriorate adhesion to the substrate after the pressure cooker test (PCT). Therefore, it is suitably used as a photosensitive resin composition for MEMS.
以下に、本発明の実施形態について説明する。
本発明の感光性樹脂組成物は、前記式(1)で表される光カチオン重合開始剤(A−1)と1分子中に2個以上のエポキシ基を有するエポキシ樹脂(B)を含有してなることを特徴とし、高感度でプレッシャークッカー試験後の基板への密着性が低下しないパターンを形成できる。さらに上記組成物は、毒性の高いアンチモン化合物を含まないため人体及び環境に対しても負荷を小さくすることができる。
Hereinafter, embodiments of the present invention will be described.
The photosensitive resin composition of the present invention contains a photocationic polymerization initiator (A-1) represented by the formula (1) and an epoxy resin (B) having two or more epoxy groups in one molecule. It is possible to form a pattern that is highly sensitive and does not deteriorate the adhesion to the substrate after the pressure cooker test. Furthermore, since the above composition does not contain a highly toxic antimony compound, the load on the human body and the environment can be reduced.
本発明における光カチオン重合開始剤(A)は、紫外線、遠紫外線、KrFやArFなどのエキシマレーザー、X線および電子線などの放射線の照射を受けてカチオンを発生し、そのカチオンが重合開始剤となりうる化合物で、通常感エネルギー線酸発生剤ともいわれている。 The cationic photopolymerization initiator (A) in the present invention generates cations upon irradiation with radiation such as ultraviolet rays, far ultraviolet rays, excimer lasers such as KrF and ArF, X-rays and electron beams, and the cations are polymerization initiators. It is a compound that can be used as an energy-sensitive linear acid generator.
次に前記エポキシ樹脂(B)について説明する。
本発明における前記エポキシ樹脂(B)とは、1分子中に2個以上のエポキシ基を有するエポキシ樹脂であれば特に限定されるものではない。1分子中に有するエポキシ基が2個未満の場合、硬化物の耐薬品性や耐熱性が著しく低下し、永久膜としての使用に耐えない可能性がある。エポキシ樹脂(B)の具体例としては、フェノール類(フェノール、アルキル置換フェノール、ナフトール、アルキル置換ナフトール、ジヒドロキシベンゼン、ジヒドロキシナフタレン等)とホルムアルデヒドとを酸性触媒下で反応して得られるノボラック類と、エピクロルヒドリン及び/又はメチルエピクロルヒドリンのようなハロヒドリンとを反応させて得られるノボラック型エポキシ樹脂や、オレフィンを有する化合物の酸化反応によって得られるエポキシ化合物等が挙げられる。
Next, the epoxy resin (B) will be described.
The epoxy resin (B) in the present invention is not particularly limited as long as it is an epoxy resin having two or more epoxy groups in one molecule. When there are less than two epoxy groups in one molecule, the chemical resistance and heat resistance of the cured product are remarkably lowered, and there is a possibility that it cannot be used as a permanent film. Specific examples of the epoxy resin (B) include novolaks obtained by reacting phenols (phenol, alkyl-substituted phenol, naphthol, alkyl-substituted naphthol, dihydroxybenzene, dihydroxynaphthalene, etc.) with formaldehyde under an acidic catalyst, Examples thereof include novolak-type epoxy resins obtained by reacting halohydrins such as epichlorohydrin and / or methyl epichlorohydrin, and epoxy compounds obtained by an oxidation reaction of a compound having an olefin.
これらエポキシ樹脂(B)のエポキシ当量は150〜500g/eq.が好ましく、この範囲よりも小さいと硬化収縮が大きく硬化物の反りやクラックが発生しやすい点で好ましくない。一方、この範囲よりも大きい場合には、架橋密度が小さくなり、硬化膜の強度や耐薬品性、耐熱性、耐クラック性が悪く好ましくない。本発明でいうエポキシ当量とは、JIS K7236に準拠した方法で測定したエポキシ当量のことである。
また、軟化点が低い場合には、パターニングする際にマスクスティッキングが発生しやすく、さらに、ドライフィルムレジストとして使用する際にも常温で軟化するので好ましくない。一方、エポキシ樹脂(B)の軟化点が高い場合には、ドライフィルムレジストを基板へラミネートする際に軟化しにくく、基板への貼合性が悪くなるので好ましくない。上記のような理由により、多官能エポキシ樹脂の好ましい軟化点は40〜120℃であり、より好ましくは50〜100℃である。本発明でいう軟化点とはJIS K7234に準拠した方法で測定した軟化点のことである。
これらのことから、本発明の感光性樹脂組成物においては、軟化点が40℃以上120℃以下であり、かつエポキシ当量が150〜500/eq.であるエポキシ樹脂が好ましい。上記範囲を満たすエポキシ樹脂(B)の具体例としては、EOCN−102S、EOCN−103S、EOCN−104S、EOCN−1020、EOCN−4400H、EPPN−201、EPPN−501、EPPN−502、XD−1000、BREN−S、NER−7604、NER−7403、NER−1302、NER−7516、NC−3000H(いずれも商品名、日本化薬(株)製)、エピコート157S70(商品名、ジャパンエポキシレジン(株)製)、EHPE3150(商品名、ダイセル(株)製)等が挙げられる。
The epoxy equivalent of these epoxy resins (B) is 150-500 g / eq. Is preferable, and if it is smaller than this range, the curing shrinkage is large, and it is not preferable in that the cured product tends to warp or crack. On the other hand, when it is larger than this range, the crosslinking density is decreased, and the strength, chemical resistance, heat resistance and crack resistance of the cured film are unfavorably deteriorated. The epoxy equivalent referred to in the present invention is an epoxy equivalent measured by a method according to JIS K7236.
Further, when the softening point is low, mask sticking is likely to occur during patterning, and further, softening at room temperature is also preferable when used as a dry film resist. On the other hand, when the softening point of the epoxy resin (B) is high, it is not preferable since the softening is difficult when laminating the dry film resist to the substrate and the bonding property to the substrate is deteriorated. For the above reasons, the preferred softening point of the polyfunctional epoxy resin is 40 to 120 ° C, more preferably 50 to 100 ° C. The softening point as used in the field of this invention is the softening point measured by the method based on JISK7234.
From these things, in the photosensitive resin composition of this invention, a softening point is 40 degreeC or more and 120 degrees C or less, and an epoxy equivalent is 150-500 / eq. An epoxy resin is preferred. Specific examples of the epoxy resin (B) satisfying the above range include EOCN-102S, EOCN-103S, EOCN-104S, EOCN-1020, EOCN-4400H, EPPN-201, EPPN-501, EPPN-502, and XD-1000. , BREN-S, NER-7604, NER-7403, NER-1302, NER-7516, NC-3000H (all trade names, manufactured by Nippon Kayaku Co., Ltd.), Epicoat 157S70 (trade names, Japan Epoxy Resins Co., Ltd.) )), EHPE3150 (trade name, manufactured by Daicel Corporation), and the like.
これらのエポキシ樹脂(B)の中でも、硬化物の耐薬品性、プラズマ耐性及び透明性が高く、さらに硬化物が低吸湿である等の理由で、前記エポキシ樹脂(B−1)、(B−2)、(B−3)、(B−4)、(B−5)、(B−6)、(B−7)、(B−8)、(B−9)、(B−10)及び(B−11)が特に好ましい。
尚、本発明において式(3)〜(12)等で表されるエポキシ樹脂とは、各式で表されるエポキシ樹脂を主成分とするエポキシ樹脂を意味するものであり、該エポキシ樹脂を製造する際に生成する副成分や、該エポキシ樹脂の高分子量体等が含有される場合も含まれる。
Among these epoxy resins (B), the epoxy resin (B-1), (B-) is preferable because the cured product has high chemical resistance, plasma resistance and transparency, and the cured product has low moisture absorption. 2), (B-3), (B-4), (B-5), (B-6), (B-7), (B-8), (B-9), (B-10) And (B-11) are particularly preferred.
In the present invention, the epoxy resin represented by the formulas (3) to (12) means an epoxy resin mainly composed of the epoxy resin represented by each formula, and the epoxy resin is manufactured. This includes cases where subcomponents produced during the process, high molecular weight polymers of the epoxy resin, and the like are contained.
前記式(3)で表されるエポキシ樹脂(B−1)の具体例としては、エピコート157(商品名、JER社製:エポキシ当量180〜250g/eq.、軟化点80〜90℃)、EPON SU−8(商品名、レゾリューション・パフォーマンス・プロダクツ社製:エポキシ当量195〜230g/eq.、軟化点80〜90℃)等が挙げられる。前記式(4)で表されるエポキシ樹脂(B−2)の具体例としては、NC−3000(商品名、日本化薬社製:エポキシ当量270〜300g/eq.、軟化点55〜75℃)が挙げられる。前記式(5)で表されるエポキシ樹脂(B−3)の具体例としては、NER−7604、NER−7403、NER−1302及びNER−7516(以上、全て商品名、日本化薬社製:エポキシ当量200〜500g/eq.、軟化点55〜75℃)等が挙げられる。前記式(6)で表されるエポキシ樹脂(B−4)の具体例としては、EOCN−1020(商品名、日本化薬社製:エポキシ当量190〜210g/eq.、軟化点55〜85℃)、EOCN−103S(商品名、日本化薬社製:エポキシ当量209〜219g/eq.、軟化点81〜85℃)が挙げられる。前記式(7)で表されるエポキシ樹脂(B−5)の具体例としては、NC−6300(商品名、日本化薬社製:エポキシ当量230〜235g/eq.、軟化点70〜72℃)が挙げられる。エポキシ樹脂(B−6)としては、特許第3698499号公報に製法が記載されたポリカルボン酸エポキシ化合物が挙げられ、そのエポキシ当量及び軟化点は、エポキシ樹脂(B−6)の原料として用いるエポキシ樹脂や導入する置換基の導入率によって種々調整が可能である。前記式(9)で表されるエポキシ樹脂(B−7)の具体例としては、EPPN−201−L(商品名、日本化薬社製:エポキシ当量180〜200g/eq.、軟化点65〜78℃)が挙げられる。前記式(10)で表されるエポキシ樹脂(B−8)の具体例としては、EPPN−501H(商品名、日本化薬社製:エポキシ当量162〜172g/eq.、軟化点51〜57℃)、EPPN−501HY(商品名、日本化薬社製:エポキシ当量163〜175g/eq.、軟化点57〜63℃)、EPPN−502H(商品名、日本化薬社製:エポキシ当量158〜178g/eq.、軟化点60〜72℃)が挙げられる。前記式(11)で表されるエポキシ樹脂(B−9)の具体例としては、EHPE3150(商品名、ダイセル化学社製:エポキシ当量170〜190g/eq.、軟化点70〜85℃)が挙げられる。前記式(12)で表されるエポキシ樹脂(B−10)の具体例としては、XD−1000(商品名、日本化薬社製:エポキシ当量245〜260g/eq.、軟化点68〜78℃)が挙げられる。前記式(13)及び/又は式(14)で示される化合物と、前記式(15)及び/又は式(16)で示される化合物との共縮合物であるエポキシ樹脂(B−11)は、特開2007-291263号公報に記載の方法により得ることができる。 Specific examples of the epoxy resin (B-1) represented by the formula (3) include Epicoat 157 (trade name, manufactured by JER: epoxy equivalent 180 to 250 g / eq., Softening point 80 to 90 ° C.), EPON SU-8 (trade name, manufactured by Resolution Performance Products, Inc .: epoxy equivalent of 195 to 230 g / eq., Softening point of 80 to 90 ° C.) and the like. Specific examples of the epoxy resin (B-2) represented by the formula (4) include NC-3000 (trade name, manufactured by Nippon Kayaku Co., Ltd .: epoxy equivalent of 270 to 300 g / eq., Softening point of 55 to 75 ° C. ). Specific examples of the epoxy resin (B-3) represented by the formula (5) include NER-7604, NER-7403, NER-1302, and NER-7516 (all are trade names, manufactured by Nippon Kayaku Co., Ltd .: Epoxy equivalent 200-500 g / eq., Softening point 55-75 ° C.) and the like. Specific examples of the epoxy resin (B-4) represented by the formula (6) include EOCN-1020 (trade name, manufactured by Nippon Kayaku Co., Ltd .: epoxy equivalent 190-210 g / eq., Softening point 55-85 ° C. ), EOCN-103S (trade name, manufactured by Nippon Kayaku Co., Ltd .: epoxy equivalent 209 to 219 g / eq., Softening point 81 to 85 ° C.). Specific examples of the epoxy resin (B-5) represented by the formula (7) include NC-6300 (trade name, manufactured by Nippon Kayaku Co., Ltd .: epoxy equivalent 230 to 235 g / eq., Softening point 70 to 72 ° C. ). Examples of the epoxy resin (B-6) include a polycarboxylic acid epoxy compound whose production method is described in Japanese Patent No. 3698499, and its epoxy equivalent and softening point are epoxy used as a raw material for the epoxy resin (B-6). Various adjustments are possible depending on the introduction rate of the resin and the substituent to be introduced. As a specific example of the epoxy resin (B-7) represented by the formula (9), EPPN-201-L (trade name, manufactured by Nippon Kayaku Co., Ltd .: epoxy equivalent 180-200 g / eq., Softening point 65- 78 ° C.). Specific examples of the epoxy resin (B-8) represented by the formula (10) include EPPN-501H (trade name, manufactured by Nippon Kayaku Co., Ltd .: epoxy equivalent 162-172 g / eq., Softening point 51-57 ° C. ), EPPN-501HY (trade name, manufactured by Nippon Kayaku Co., Ltd .: epoxy equivalent 163 to 175 g / eq., Softening point 57-63 ° C.), EPPN-502H (trade name, manufactured by Nippon Kayaku Co., Ltd .: epoxy equivalents 158 to 178 g) / Eq., Softening point 60-72 ° C.). Specific examples of the epoxy resin (B-9) represented by the formula (11) include EHPE3150 (trade name, manufactured by Daicel Chemical Industries, Ltd .: epoxy equivalent 170 to 190 g / eq., Softening point 70 to 85 ° C.). It is done. Specific examples of the epoxy resin (B-10) represented by the formula (12) include XD-1000 (trade name, manufactured by Nippon Kayaku Co., Ltd .: epoxy equivalent of 245 to 260 g / eq., Softening point of 68 to 78 ° C. ). An epoxy resin (B-11) which is a cocondensate of the compound represented by the formula (13) and / or the formula (14) and the compound represented by the formula (15) and / or the formula (16), It can be obtained by the method described in JP 2007-291263 A.
次に本発明の感光性樹脂組成物における各成分の配合割合について説明する。
本発明の感光性樹脂組成物における、光カチオン重合開始剤(A)(以下、単に「(A)成分」という場合もある)と1分子中に2個以上のエポキシ基を有するエポキシ樹脂(B)(以下、単に「(B)成分」という場合もある)の合計量を100質量%とした場合、通常(A)成分0.1〜15質量%に対して(B)成分85〜99.9重量%の割合で配合される。本発明の感光性樹脂組成物に用いられる光カチオン重合開始剤(A)は、波長300〜380nmにおけるモル吸光係数が高いので、感光性樹脂組成物を使用する際の膜厚に応じて適切な配合比に調整される必要がある。
Next, the blending ratio of each component in the photosensitive resin composition of the present invention will be described.
In the photosensitive resin composition of the present invention, a photocationic polymerization initiator (A) (hereinafter sometimes simply referred to as “component (A)”) and an epoxy resin having two or more epoxy groups in one molecule (B ) (Hereinafter also referred to simply as “component (B)”) is 100% by mass, the component (B) 85-99. It mix | blends in the ratio of 9 weight%. Since the photocationic polymerization initiator (A) used in the photosensitive resin composition of the present invention has a high molar extinction coefficient at a wavelength of 300 to 380 nm, it is appropriate depending on the film thickness when the photosensitive resin composition is used. It is necessary to adjust the blending ratio.
本発明の感光性樹脂組成物には、さらにパターンの性能を改良するため混和性のある反応性エポキシモノマー(C)(以下、単に「(C)成分」という場合もある)を添加してもよい。反応性エポキシモノマーとしては、グリシジルエーテル化合物が使用でき、例えばジエチレングリコールジグリシジルエーテル、ヘキサンジオールジグリシジルエーテル、ジメチロールプロパンジグリシジルエーテル、ポリプロピレングリコールジグリシジルエーテル(アデカ(株)製、ED506)、トリメチロールプロパントリグリシジルエーテル(アデカ(株)製、ED505)、トリメチロールプロパントリグリシジルエーテル(低塩素タイプ、ナガセケムテックス(株)製、EX321L)、ペンタエリスリトールテトラグリシジルエーテル等が挙げられる。さらにこれらエポキシモノマーは塩素含有量が一般的に高いため、低塩素製造法又は精製工程を経た低塩素タイプのものを使用することが好ましい。これらは、単独あるいは2種以上混合して用いることができる。反応性エポキシモノマー(C)成分はレジストの反応性や硬化膜の物性を改善する目的で使用されるが、反応性エポキシモノマー成分は液状のものが多く、該成分が液状である場合に感光性樹脂組成物の総量に対して20質量%よりも多く配合すると、溶剤除去後の皮膜にベタツキが生じることでマスクスティッキングが起きやすくなるなど不適当である。この点から、モノマー成分を配合する場合には、その配合割合は、(A)成分、(B)成分及び(C)成分の合計をレジストの固形分とした場合、該固形分中で10質量%以下が好ましく、特に7質量%以下が好適である。 The photosensitive resin composition of the present invention may be added with a miscible reactive epoxy monomer (C) (hereinafter sometimes simply referred to as “component (C)”) in order to further improve pattern performance. Good. As the reactive epoxy monomer, a glycidyl ether compound can be used. For example, diethylene glycol diglycidyl ether, hexanediol diglycidyl ether, dimethylolpropane diglycidyl ether, polypropylene glycol diglycidyl ether (manufactured by Adeka Corporation, ED506), trimethylol. Examples include propane triglycidyl ether (manufactured by Adeka Corporation, ED505), trimethylolpropane triglycidyl ether (low chlorine type, manufactured by Nagase ChemteX Corporation, EX321L), pentaerythritol tetraglycidyl ether, and the like. Furthermore, since these epoxy monomers generally have a high chlorine content, it is preferable to use those of low chlorine type that have undergone a low chlorine production method or purification step. These can be used alone or in admixture of two or more. The reactive epoxy monomer (C) component is used for the purpose of improving the reactivity of the resist and the physical properties of the cured film, but the reactive epoxy monomer component is often in liquid form and is photosensitive when the component is liquid. If it is added in an amount of more than 20% by mass based on the total amount of the resin composition, it is unsuitable because mask sticking easily occurs due to stickiness of the film after removal of the solvent. From this point, when the monomer component is blended, the blending ratio is 10 mass in the solid content when the sum of the component (A), the component (B) and the component (C) is the solid content of the resist. % Or less is preferable, and 7% by mass or less is particularly preferable.
本発明の感光性樹脂組成物の粘度を下げ、塗膜性を向上させるために溶剤(D)を用いることができる。溶剤としては、インキ、塗料等に通常用いられる有機溶剤であり、各成分の溶解が可能であるものはすべて用いることができる。このような有機溶剤としてはアセトン、エチルメチルケトン、シクロヘキサノン及びシクロペンタノン等のケトン類、トルエン、キシレン及びテトラメチルベンゼン等の芳香族炭化水素類、ジプロピレングリコールジメチルエーテル及びジプロピレングリコールジエチルエーテル等のグリコールエーテル類、酢酸エチル、酢酸ブチル、ブチルセロソルブアセテート、カルビトールアセテート、プロピレングリコールモノメチルエーテルアセテート及びγ−ブチロラクトン等のエステル類、メタノール、エタノール、セロソルブ及びメチルセロソルブ等のアルコール類、オクタン及びデカン等の脂肪族炭化水素、石油エーテル、石油ナフサ、水添石油ナフサ及びソルベントナフサ等の石油系溶剤等を挙げることができる。 A solvent (D) can be used to lower the viscosity of the photosensitive resin composition of the present invention and improve the coating properties. As the solvent, organic solvents that are usually used in inks, paints, and the like, and any solvent that can dissolve each component can be used. Examples of such organic solvents include ketones such as acetone, ethyl methyl ketone, cyclohexanone and cyclopentanone, aromatic hydrocarbons such as toluene, xylene and tetramethylbenzene, dipropylene glycol dimethyl ether and dipropylene glycol diethyl ether. Glycol ethers, ethyl acetate, butyl acetate, butyl cellosolve acetate, carbitol acetate, propylene glycol monomethyl ether acetate and esters such as γ-butyrolactone, alcohols such as methanol, ethanol, cellosolve and methylcellosolve, fats such as octane and decane And petroleum solvents such as group hydrocarbons, petroleum ether, petroleum naphtha, hydrogenated petroleum naphtha and solvent naphtha.
これら溶剤は、単独であるいは2種以上を混合して用いることができる。溶剤成分は、基材へ塗布する際の膜厚や塗布性を調整する目的で加えるものであり、主成分の溶解性や成分の揮発性、組成物の液粘度等を適正に保持する為のその使用量としては、感光性樹脂組成物中において95質量%以下が好ましく、特に好ましくは10〜90質量%である。 These solvents can be used alone or in admixture of two or more. The solvent component is added for the purpose of adjusting the film thickness and applicability when applied to the base material, in order to properly maintain the solubility of the main component, the volatility of the component, the liquid viscosity of the composition, etc. The amount used is preferably 95% by mass or less, and particularly preferably 10 to 90% by mass in the photosensitive resin composition.
本発明の感光性樹脂組成物には、さらに基板に対する組成物の密着性を向上させる目的で、混和性のある密着性付与剤を使用してもよい。密着性付与剤としてはシランカップリング剤又はチタンカップリング剤などのカップリング剤を用いることができ、好ましくはシランカップリング剤が挙げられる。 In the photosensitive resin composition of the present invention, a miscible adhesion imparting agent may be used for the purpose of further improving the adhesion of the composition to the substrate. As the adhesion-imparting agent, a coupling agent such as a silane coupling agent or a titanium coupling agent can be used, and a silane coupling agent is preferable.
上記シランカップリング剤としては3−クロロプロピルトリメトキシシラン、ビニルトリクロロシラン、ビニルトリエトキシシラン、ビニルトリメトキシシラン、ビニル・トリス(2−メトキシエトキシ)シラン、3−メタクリロキシプロピルトリメトキシシラン、2−(3,4−エポキシシクロヘキシル)エチルトリメトキシシラン、3−グリシドキシプロピルトリメトキシシラン、3−メルカプトプロピルトリメトキシシラン、3−アミノプロピルトリエトキシシラン、N−2−(アミノエチル)−3−アミノプロピルトリメトキシシラン、3−ユレイドプロピルトリエトキシシラン等が挙げられる。これら密着性付与剤は、単独で、又は2種以上を組み合わせて用いることができる。
密着性付与剤は主成分とは未反応性のものであるため、基材界面で作用する成分以外は硬化後に残存成分として存在することになり、多量に使用すると物性低下などの悪影響を及ぼす。基材によっては、少量でも効果を発揮する点から、悪影響を及ぼさない範囲内での使用が適当であり、その使用割合は、感光性樹脂組成物に対して15質量%以下が好ましく、特に好ましくは5質量%以下である。
Examples of the silane coupling agent include 3-chloropropyltrimethoxysilane, vinyltrichlorosilane, vinyltriethoxysilane, vinyltrimethoxysilane, vinyl tris (2-methoxyethoxy) silane, 3-methacryloxypropyltrimethoxysilane, 2 -(3,4-epoxycyclohexyl) ethyltrimethoxysilane, 3-glycidoxypropyltrimethoxysilane, 3-mercaptopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, N-2- (aminoethyl) -3 -Aminopropyltrimethoxysilane, 3-ureidopropyltriethoxysilane, etc. are mentioned. These adhesiveness imparting agents can be used alone or in combination of two or more.
Since the adhesion-imparting agent is non-reactive with the main component, components other than those that act at the substrate interface exist as residual components after curing, and if used in a large amount, adverse effects such as deterioration of physical properties will occur. Depending on the base material, it can be used in a range that does not adversely affect the effect even in a small amount, and its use ratio is preferably 15% by mass or less, particularly preferably based on the photosensitive resin composition. Is 5% by mass or less.
本発明の感光性樹脂組成物には、さらに紫外線を吸収し、吸収した光エネルギーを光カチオン重合開始剤に供与するために増感剤を使用してもよい。増感剤としては、例えばチオキサントン類、9位と10位にアルコキシ基を有するアントラセン化合物(9,10−ジアルコキシアントラセン誘導体)が好ましい。前記アルコキシ基としては、例えばメトキシ基、エトキシ基、プロポキシ基、ブトキシ基等のC1〜C4のアルコキシ基が挙げられる。9,10−ジアルコキシアントラセン誘導体は、さらに置換基を有していても良い。置換基としては、例えばフッ素原子、塩素原子、臭素原子、ヨウ素原子等のハロゲン原子、メチル基、エチル基、プロピル基等のC1〜C4のアルキル基やスルホン酸アルキルエステル基、カルボン酸アルキルエステル基等が挙げられる。スルホン酸アルキルエステル基やカルボン酸アルキルエステルにおけるアルキルとしては、例えばメチル、エチル、プロピル等のC1〜C4のアルキルが挙げられる。これらの置換基の置換位置は2位が好ましい。 In the photosensitive resin composition of the present invention, a sensitizer may be further used for absorbing ultraviolet light and supplying the absorbed light energy to the photocationic polymerization initiator. As the sensitizer, for example, thioxanthones and anthracene compounds having an alkoxy group at the 9th and 10th positions (9,10-dialkoxyanthracene derivative) are preferable. Examples of the alkoxy group include C1-C4 alkoxy groups such as a methoxy group, an ethoxy group, a propoxy group, and a butoxy group. The 9,10-dialkoxyanthracene derivative may further have a substituent. Examples of the substituent include halogen atoms such as fluorine atom, chlorine atom, bromine atom and iodine atom, C1-C4 alkyl group such as methyl group, ethyl group and propyl group, sulfonic acid alkyl ester group, and carboxylic acid alkyl ester group. Etc. Examples of the alkyl in the sulfonic acid alkyl ester group and the carboxylic acid alkyl ester include C1-C4 alkyl such as methyl, ethyl, and propyl. The substitution position of these substituents is preferably the 2-position.
チオキサントン類の具体例としては、2,4−ジメチルチオキサントン、2,4−ジエチルチオキサントン、2−クロロチオキサントン、2,4−ジイソプロピルチオキサントン等が挙げられ、2,4−ジエチルチオキサントン(商品名 カヤキュアーDETX−S、日本化薬(株)製)、2−イソプロピルチオキサントンが好ましい。 Specific examples of thioxanthones include 2,4-dimethylthioxanthone, 2,4-diethylthioxanthone, 2-chlorothioxanthone, 2,4-diisopropylthioxanthone, and the like. 2,4-diethylthioxanthone (trade name Kayacure DETX- S, manufactured by Nippon Kayaku Co., Ltd.) and 2-isopropylthioxanthone are preferable.
9,10−ジアルコキシアントラセン誘導体としては、例えば9,10−ジメトキシアントラセン、9,10−ジエトキシアントラセン、9,10−ジプロポキシアントラセン、9,10−ジブトキシアントラセン、9,10−ジメトキシ−2−エチルアントラセン、9,10−ジエトキシ−2−エチルアントラセン、9,10−ジプロポキシ−2−エチルアントラセン、9,10−ジメトキシ−2−クロロアントラセン、9,10−ジメトキシアントラセン−2−スルホン酸メチルエステル、9,10−ジエトキシアントラセン−2−スルホン酸メチルエステル、9,10−ジメトキシアントラセン−2−カルボン酸メチルエステル等を挙げることができる。 Examples of the 9,10-dialkoxyanthracene derivative include 9,10-dimethoxyanthracene, 9,10-diethoxyanthracene, 9,10-dipropoxyanthracene, 9,10-dibutoxyanthracene, and 9,10-dimethoxy-2. -Ethylanthracene, 9,10-diethoxy-2-ethylanthracene, 9,10-dipropoxy-2-ethylanthracene, 9,10-dimethoxy-2-chloroanthracene, 9,10-dimethoxyanthracene-2-sulfonic acid methyl ester 9,10-diethoxyanthracene-2-sulfonic acid methyl ester, 9,10-dimethoxyanthracene-2-carboxylic acid methyl ester, and the like.
これらは、単独であるいは2種以上混合して用いることができるが、2,4−ジエチルチオキサントン及び、9,10−ジメトキシ−2−エチルアントラセンの使用が最も好ましい。増感剤成分は、少量で効果を発揮する為、その使用割合は、光カチオン重合開始剤(A)成分に対し30質量%以下が好ましく、特に好ましくは20質量%以下である。 These may be used alone or in combination of two or more, but the use of 2,4-diethylthioxanthone and 9,10-dimethoxy-2-ethylanthracene is most preferred. Since the sensitizer component exerts its effect in a small amount, its use ratio is preferably 30% by mass or less, particularly preferably 20% by mass or less, relative to the photocationic polymerization initiator (A) component.
本発明において、光カチオン重合開始剤(A)由来のイオンによる悪影響を低減する必要がある場合には、トリスメトキシアルミニウム、トリスエトキシアルミニウム、トリスイソプロポキシアルミニウム、イソプロポキシジエトキシアルミニウム及びトリスブトキシアルミニウム等のアルコキシアルミニウム、トリスフェノキシアルミニウム及びトリスパラメチルフェノキシアルミニウム等のフェノキシアルミニウム、トリスアセトキシアルミニウム、トリスステアラトアルミニウム、トリスブチラトアルミニウム、トリスプロピオナトアルミニウム、トリスアセチルアセトナトアルミニウム、トリストリフルオロアセチルアセナトアルミニウム、トリスエチルアセトアセタトアルミニウム、ジアセチルアセトナトジピバロイルメタナトアルミニウム及びジイソプロポキシ(エチルアセトアセタト)アルミニウム等の有機アルミニウム化合物などのイオンキャッチャーを添加してもよく、これら成分は、単独で、又は2種以上を組み合わせて用いることができる。また、その配合量は、(A)成分、(B)成分及び(C)成分の合計をレジストの固形分とした場合、該固形分に対して10質量%以下である。 In the present invention, when it is necessary to reduce the adverse effects of ions derived from the photocationic polymerization initiator (A), trismethoxyaluminum, trisethoxyaluminum, trisisopropoxyaluminum, isopropoxydiethoxyaluminum, trisbutoxyaluminum, etc. Alkoxyaluminum, Trisphenoxyaluminum and Trisparamethylphenoxyaluminum and other phenoxyaluminum, trisacetoxyaluminum, trisstearatoaluminum, trisbutyratealuminum, trispropionatoaluminum, trisacetylacetonatoaluminum , Trisethylacetoacetoaluminum, diacetylacetonatodipivaloylmethanatoa Miniumu and diisopropoxy (ethylacetoacetato) may be added to the ion catcher, such as aluminum and organic aluminum compounds, these ingredients may be used alone or in combination of two or more. Moreover, the compounding quantity is 10 mass% or less with respect to this solid content, when the sum total of (A) component, (B) component, and (C) component is made into solid content of a resist.
更に本発明においては、必要に応じて、熱可塑性樹脂、着色剤、増粘剤、消泡剤、レベリング剤等の各種添加剤を用いることが出来る。熱可塑性樹脂としては、例えばポリエーテルスルホン、ポリスチレン、ポリカーボネート等があげられ、着色剤としては、例えばフタロシアニンブルー、フタロシアニングリーン、アイオジン・グリーン、クリスタルバイオレット、酸化チタン、カーボンブラック、ナフタレンブラック等があげられ、増粘剤としては、例えばオルベン、ベントン、モンモリロナイト等があげられ、消泡剤としては、例えばシリコーン系、フッ素系および高分子系等の消泡剤があげられる。これらの添加剤等を使用する場合、その使用量は本発明の感光性樹脂組成物中、例えば、それぞれ0.1〜30質量%程度が一応の目安であるが、使用目的に応じ適宜増減し得る。 Furthermore, in this invention, various additives, such as a thermoplastic resin, a coloring agent, a thickener, an antifoamer, a leveling agent, can be used as needed. Examples of the thermoplastic resin include polyethersulfone, polystyrene, and polycarbonate. Examples of the colorant include phthalocyanine blue, phthalocyanine green, iodin green, crystal violet, titanium oxide, carbon black, and naphthalene black. Examples of the thickener include olben, benton and montmorillonite, and examples of the antifoaming agent include antifoaming agents such as silicone type, fluorine type and polymer type. When using these additives, etc., the amount used thereof is, for example, about 0.1 to 30% by mass in the photosensitive resin composition of the present invention, but may be appropriately increased or decreased depending on the purpose of use. obtain.
更に、本発明においては、例えば硫酸バリウム、チタン酸バリウム、酸化ケイ素、無定形シリカ、タルク、クレー、炭酸マグネシウム、炭酸カルシウム、酸化アルミニウム、水酸化アルミニウム、雲母粉等の無機充填剤を用いることができ、その配合比率は、本発明の感光性樹脂組成物中0〜60質量%である。 Further, in the present invention, for example, an inorganic filler such as barium sulfate, barium titanate, silicon oxide, amorphous silica, talc, clay, magnesium carbonate, calcium carbonate, aluminum oxide, aluminum hydroxide, mica powder or the like is used. The blending ratio is 0 to 60% by mass in the photosensitive resin composition of the present invention.
本発明の感光性樹脂組成物は、好ましくは下記表1の割合で各成分を配合し、必要に応じ前記密着性付与剤、増感剤、イオンキャッチャー、熱可塑性樹脂、着色剤、増粘剤、消泡剤、レベリング剤および無機充填剤を添加して、通常の方法で混合、攪拌することにより得られる。あるいは必要に応じディゾルバー、ホモジナイザー、3本ロールミルなどの分散機を用い分散、混合させてもよい。また、混合した後で、さらにメッシュ、メンブレンフィルターなどを用いてろ過してもよい。 The photosensitive resin composition of the present invention preferably contains each component in the proportions shown in Table 1 below, and if necessary, the adhesion imparting agent, sensitizer, ion catcher, thermoplastic resin, colorant, thickener. It is obtained by adding an antifoaming agent, a leveling agent and an inorganic filler, and mixing and stirring by a usual method. Or you may disperse | distribute and mix using dispersers, such as a dissolver, a homogenizer, and a 3 roll mill, as needed. Moreover, after mixing, you may further filter using a mesh, a membrane filter, etc.
表1
成分名 質量
光カチオン重合開始剤(A) 0.1〜 15.0
エポキシ樹脂(B) 85.0〜 99.9
反応性エポキシモノマー(C) 1.0〜 10.0
溶剤(D) 5.8〜2090.0
Table 1
Ingredient name Mass Photocationic polymerization initiator (A) 0.1 to 15.0
Epoxy resin (B) 85.0 to 99.9
Reactive epoxy monomer (C) 1.0 to 10.0
Solvent (D) 5.8-2090.0
本発明の感光性樹脂組成物は、好ましくは液状で使用される。本発明の感光性樹脂組成物を使用するには、例えばシリコン、アルミニウム、銅等の金属基板、リチウムタンタレート、ガラス、シリコンオキサイド、シリコンナイトライド等のセラミック基板、ポリイミド、ポリエチレンテレフタラート等の基板上に0.1〜1000μmの厚みでスピンコーター等を用いて塗布し、60〜130℃で5〜60分間程度、熱処理し溶剤を除去し感光性樹脂組成物層を形成した後、所定のパターンを有するマスクを載置して紫外線を照射し、50〜130℃で1〜50分間程度、加熱処理を行った後、未露光部分を、現像液を用いて室温〜50℃で1〜180分間程度現像してパターンを形成し、次いで130〜200℃で加熱処理をすることにより、諸特性を満足する永久保護膜が得られる。現像液としては、例えばγ−ブチロラクトン、トリエチレングリコールジメチルエーテル、プロピレングリコールモノメチルエーテルアセテート等の有機溶剤、あるいは、前記有機溶剤と水の混合液等を用いることができる。現像にはパドル型、スプレー型、シャワー型等の現像装置を用いてもよく、必要に応じて超音波照射を行ってもよい。尚、本発明の感光性樹脂組成物を使用するにあたり好ましい金属基板としては、アルミニウムが挙げられる。 The photosensitive resin composition of the present invention is preferably used in liquid form. In order to use the photosensitive resin composition of the present invention, for example, a metal substrate such as silicon, aluminum or copper, a ceramic substrate such as lithium tantalate, glass, silicon oxide or silicon nitride, a substrate such as polyimide or polyethylene terephthalate After coating with a spin coater or the like with a thickness of 0.1 to 1000 μm on top and heat-treating at 60 to 130 ° C. for about 5 to 60 minutes to remove the solvent and forming a photosensitive resin composition layer, a predetermined pattern is formed. A mask having the above is placed and irradiated with ultraviolet rays, and after heat treatment at 50 to 130 ° C. for about 1 to 50 minutes, the unexposed portion is developed at room temperature to 50 ° C. for 1 to 180 minutes using a developer. A permanent protective film satisfying various characteristics can be obtained by forming a pattern by developing to the extent, and then heat-treating at 130 to 200 ° C. As the developer, for example, an organic solvent such as γ-butyrolactone, triethylene glycol dimethyl ether, propylene glycol monomethyl ether acetate, or a mixed solution of the organic solvent and water can be used. For development, a paddle type, spray type, shower type, or other developing device may be used, and ultrasonic irradiation may be performed as necessary. In addition, aluminum is mentioned as a preferable metal substrate in using the photosensitive resin composition of this invention.
本発明の樹脂組成物は、ベースフィルム上にロールコーター、ダイコーター、ナイフコーター、バーコーター、グラビアコーター等を用いて該組成物を塗布した後、45〜100℃に設定した乾燥炉で乾燥し、所定量の溶剤を除去することにより、又必要に応じてカバーフィルム等を積層することによりドライフィルムレジストとすることができる。この際、ベースフィルム上のレジストの厚さは、2〜100μmに調整される。ベースフィルム及びカバーフィルムとしては、例えばポリエステル、ポリプロピレン、ポリエチレン、TAC、ポリイミド等のフィルムが使用される。これらフィルムには、必要に応じてシリコーン系離型処理剤や非シリコーン系離型処理剤等により離型処理されたされたフィルムを用いてもよい。このドライフィルムレジストを使用するには、例えばカバーフィルムをはがして、ハンドロール、ラミネーター等により、温度40〜100℃、圧力0.05〜2MPaで基板に転写し、前記液状の感光性樹脂組成物と同様に露光、露光後ベーク、現像、加熱処理をすればよい。 The resin composition of the present invention is applied to the base film using a roll coater, die coater, knife coater, bar coater, gravure coater, etc., and then dried in a drying oven set at 45 to 100 ° C. A dry film resist can be obtained by removing a predetermined amount of the solvent and, if necessary, laminating a cover film or the like. At this time, the thickness of the resist on the base film is adjusted to 2 to 100 μm. As a base film and a cover film, films, such as polyester, a polypropylene, polyethylene, TAC, a polyimide, are used, for example. As these films, a film that has been subjected to a release treatment with a silicone-based release treatment agent, a non-silicone release treatment agent, or the like may be used as necessary. In order to use this dry film resist, for example, the cover film is peeled off and transferred to a substrate at a temperature of 40 to 100 ° C. and a pressure of 0.05 to 2 MPa by a hand roll, a laminator, etc., and the liquid photosensitive resin composition is used. Similarly to the above, exposure, post-exposure baking, development, and heat treatment may be performed.
前述のように感光性樹脂組成物をフィルムとして供給すれば、支持体上への塗布、および乾燥の工程を省略することが可能であり、より簡便に本発明の感光性樹脂組成物を用いたパターン形成が可能となる。 If the photosensitive resin composition is supplied as a film as described above, the steps of coating on the support and drying can be omitted, and the photosensitive resin composition of the present invention is used more simply. Pattern formation is possible.
MEMSパッケージ及び半導体パッケージとして用いる場合は、本発明の感光性樹脂組成物で被覆、又は中空構造を作製することにより使用できる。MEMS及び半導体パッケージの基板としては種種形状のシリコンウエハ上に、スパッタリング又は蒸着によりアルミニウム、金、銅、クロム、チタン等の金属薄膜を10〜5000Åの膜厚で成膜し、エッチング法等によりその金属を微細加工した基板等が用いられる。場合によっては、さらに無機の保護膜としてシリコンオキサイドやシリコンナイトライドが10〜10000Åの膜厚で成膜されることもある。次いで基板上に、MEMS又は半導体デバイスを作製又は設置し、このデバイスを外気から遮断するために、被覆又は中空構造を作製する必要がある。本発明の感光性樹脂組成物で被覆する場合は、前記の方法で行なうことができる。また、中空構造を作製する場合は、基板上へ前記の方法で隔壁を形成させ、その上にさらに、前記の方法でドライフィルムをラミネート及び隔壁上の蓋となるようにパターニングを行なうことで、中空パッケージ構造を作製することができる。また、作製後、必要に応じて130〜200℃で10〜120分間、加熱処理をすることで諸特性を満足するMEMSパッケージ部品及び半導体パッケージ部品が得られる。
尚、「パッケージ」とは、基板、配線、素子等の安定性を保つため、外気の気体、液体の浸入を遮断するために用いられる封止方法である。本発明で記載するパッケージとは、MEMSのような駆動部があるものや、SAWデバイス等の振動子をパッケージするための中空パッケージや、半導体基板、プリント配線版、配線等の劣化を防ぐために行う表面保護や、樹脂封止等を表す。
When used as a MEMS package and a semiconductor package, it can be used by coating with the photosensitive resin composition of the present invention or by producing a hollow structure. As a substrate for MEMS and semiconductor packages, a thin metal film of aluminum, gold, copper, chromium, titanium or the like is formed on a silicon wafer having various shapes by sputtering or vapor deposition to a thickness of 10 to 5000 mm, and the etching is used to form the thin film. A substrate or the like obtained by finely processing a metal is used. Depending on the case, silicon oxide or silicon nitride may be formed as an inorganic protective film with a film thickness of 10 to 10,000 mm. It is then necessary to make a coating or hollow structure on the substrate in order to make or install a MEMS or semiconductor device and to shield the device from the outside air. When covering with the photosensitive resin composition of this invention, it can carry out by the said method. In the case of producing a hollow structure, the partition wall is formed on the substrate by the above method, and further, the dry film is laminated by the above method and patterned so as to be a lid on the partition wall, A hollow package structure can be produced. Moreover, the MEMS package component and semiconductor package component which satisfy | fill various characteristics are obtained by heat-processing for 10 to 120 minutes at 130-200 degreeC as needed after preparation.
Note that the “package” is a sealing method used to block the intrusion of gas or liquid in the outside air in order to maintain the stability of the substrate, wiring, elements, and the like. The package described in the present invention is performed in order to prevent deterioration of a package having a driving unit such as a MEMS, a hollow package for packaging a vibrator such as a SAW device, a semiconductor substrate, a printed wiring board, wiring, or the like. It represents surface protection, resin sealing, and the like.
本発明の感光性樹脂組成物は、良好な画像解像度、熱安定性、耐薬品及び溶媒溶解性を有し、高感度でかつプレッシャークッカー試験(PCT)後の基板への密着性が低下しないという特徴があるので、例えば、MEMS(微小電子機械システム)部品、マイクロマシン部品、マイクロ流体部品、μ−TAS(微小全分析システム)部品、インクジェットプリンター部品、マイクロ反応器部品、導電性層、LIGA部品、微小射出成形及び熱エンボス向け型及びスタンプ、微細印刷用途向けスクリーン又はステンシル、MEMSパッケージ部品、半導体パッケージ部品、BioMEMS及びバイオフォトニックデバイス、並びに、プリント配線板の製作等に利用される。中でも特に、MEMSパッケージ部品及び半導体パッケージ部品において有用である。 The photosensitive resin composition of the present invention has good image resolution, thermal stability, chemical resistance and solvent solubility, is highly sensitive, and does not decrease adhesion to the substrate after the pressure cooker test (PCT). Since there are features, for example, MEMS (micro electro mechanical system) parts, micro machine parts, micro fluid parts, μ-TAS (micro total analysis system) parts, inkjet printer parts, micro reactor parts, conductive layers, LIGA parts, Used for production of molds and stamps for micro injection molding and hot embossing, screens or stencils for micro printing applications, MEMS package parts, semiconductor package parts, BioMEMS and biophotonic devices, and printed wiring boards. Especially, it is useful in MEMS package parts and semiconductor package parts.
以下、本発明を実施例により詳細に説明するが、これらの実施例は、本発明を好適に説明するための例示に過ぎず、なんら本発明を限定するものではない。 EXAMPLES Hereinafter, although an Example demonstrates this invention in detail, these Examples are only the illustrations for demonstrating this invention suitably, and do not limit this invention at all.
実施例1〜3及び比較例1
(感光性樹脂組成物の調製)
表2に記載の配合量(単位は質量部)に従って、多官能エポキシ樹脂、光カチオン重合開始剤、およびその他の成分を攪拌機付きフラスコで60℃、1時間攪拌混合し、本発明及び比較用の感光性樹脂組成物を得た。
Examples 1 to 3 and Comparative Example 1
(Preparation of photosensitive resin composition)
According to the blending amount shown in Table 2 (unit is part by mass), the polyfunctional epoxy resin, the photocationic polymerization initiator, and other components were stirred and mixed in a flask with a stirrer at 60 ° C. for 1 hour, for the present invention and comparative purposes A photosensitive resin composition was obtained.
(感光性樹脂組成物のパターニング)
実施例1〜3及び比較例1の各感光性樹脂組成物をシリコンウエハ上にスピンコーターで塗布後、乾燥し、表2に示す膜厚(表2における「塗工後膜厚」は塗布、乾燥した後の膜厚を意味する。)を有する感光性樹脂組成物層を得た。この感光性樹脂組成物層をホットプレートにより65℃で5分間および95℃で15分間プリベークした。その後、i線露光装置(マスクアライナー:ウシオ電機社製)を用いてパターン露光(ソフトコンタクト、i線)を行い、ホットプレートにより95℃で6分間の露光後ベーク(以下「PEB」と記載する)を行い、プロピレングリコールモノメチルエーテルアセテート(以下「PGMEA」と記載する)を用いて浸漬法により23℃で5分間現像処理を行い、基板(シリコンウエハ)上に硬化した樹脂パターンを得た。
(Patterning of photosensitive resin composition)
Each photosensitive resin composition of Examples 1 to 3 and Comparative Example 1 was applied on a silicon wafer with a spin coater and then dried, and the film thicknesses shown in Table 2 (“film thickness after coating” in Table 2 are applied) A photosensitive resin composition layer having a thickness after drying) was obtained. This photosensitive resin composition layer was pre-baked on a hot plate at 65 ° C. for 5 minutes and at 95 ° C. for 15 minutes. Thereafter, pattern exposure (soft contact, i-line) is performed using an i-line exposure apparatus (mask aligner: manufactured by USHIO INC.), And post-exposure baking (hereinafter referred to as “PEB”) at 95 ° C. for 6 minutes using a hot plate. Then, development treatment was performed at 23 ° C. for 5 minutes by a dipping method using propylene glycol monomethyl ether acetate (hereinafter referred to as “PGMEA”) to obtain a cured resin pattern on the substrate (silicon wafer).
(感光性樹脂組成物の感度評価)
前記パターン露光において、マスク転写精度が最良となる露光量を最適露光量とし、それぞれの感光性樹脂組成物の感度の評価を行った。最適露光量の値が小さいほど感度が高いことを表す。結果を下記表2に示す。
(Sensitivity evaluation of photosensitive resin composition)
In the pattern exposure, the exposure amount with the best mask transfer accuracy was set as the optimal exposure amount, and the sensitivity of each photosensitive resin composition was evaluated. The smaller the optimum exposure value, the higher the sensitivity. The results are shown in Table 2 below.
(感光性樹脂組成物の解像性評価)
解像性:前記パターン露光において、1、5、10及び20μmのラインアンドスペースのフォトマスクを使用し、残渣がなく解像されたレジストパターン中、基板へ密着している最も細かいパターン幅を測定した。結果を下記表2に示す。
(Resolution evaluation of photosensitive resin composition)
Resolution: In the pattern exposure, using the photomask of 1, 5, 10 and 20 μm line and space, measure the finest pattern width closely attached to the substrate in the resist pattern resolved without residue did. The results are shown in Table 2 below.
(感光性樹脂組成物のPCT耐性評価)
シリコンウエハ上に1000Åのアルミニウム薄膜をスパッタリングにより成膜し、その基板を用いて実施例1〜3及び比較例1で得られた各感光性樹脂組成物について、前記同様のパターニングを行なった。得られた各試験片に、温風対流式オーブンを用いて150℃、30分間のハードベークを施した。その後、各試験片をHASTチャンバー(エスペック社製)中に入れ、121℃、100%RH、2気圧とし、20時間恒温恒湿状態を保持(PCT)した後、試験片を取り出し、図1で模式的に示す形状のパターンの密着力を測定し、PCT耐性を評価した。尚、シェアツールを用いてパターン側面部から力を加え、基板からパターンが剥離した時点でのシェア強度を密着力とした。
評価基準
○:密着力が50gf以上
△:密着力が5gf以上50gf未満
×:密着力が5gf未満(測定限界以下)
(Evaluation of PCT resistance of photosensitive resin composition)
A 1000 ア ル ミ ニ ウ ム aluminum thin film was formed on a silicon wafer by sputtering, and the photosensitive resin compositions obtained in Examples 1 to 3 and Comparative Example 1 were subjected to the same patterning using the substrate. Each obtained test piece was hard baked at 150 ° C. for 30 minutes using a warm air convection oven. Then, each test piece was put in a HAST chamber (manufactured by Espec Corp.), kept at 121 ° C., 100% RH, 2 atm, maintained at constant temperature and humidity for 20 hours (PCT), and then taken out the test piece. PCT tolerance was evaluated by measuring the adhesion of the pattern having the shape schematically shown. In addition, force was applied from the side surface portion of the pattern using a shear tool, and the shear strength at the time when the pattern peeled from the substrate was defined as the adhesion force.
Evaluation criteria ○: Adhesion force is 50 gf or more Δ: Adhesion force is 5 gf or more and less than 50 gf ×: Adhesion force is less than 5 gf (measurement limit or less)
尚、表2における(A−1)〜(F)はそれぞれ下記を示す。
(A−1):前記式(1)で示される光カチオン重合開始剤(商品名 GSID26−1、チバスペシャルティケミカルズ製)
(B−1):前記式(3)で表されるエポキシ樹脂(商品名 EPON SU−8、レゾリューション・パフォーマンス・プロダクツ製、エポキシ当量210g/eq.、軟化点85℃)
(B−2):前記式(4)で表されるエポキシ樹脂(商品名 NC−3000H、日本化薬社製、エポキシ当量285g/eq.、軟化点65℃)
(B−3):前記式(5)で表されるエポキシ樹脂(商品名 NER−7604、日本化薬社製、エポキシ当量347g/eq.、軟化点71℃)
(PAG−1):光カチオン重合開始剤(ジフェニル[4−(フェニルチオ)フェニル]スルホニウム=ヘキサフルオロアンチモナート、商品名 CPI−101A、サンアプロ社製、50%炭酸プロピレン溶液)
(C):反応性エポキシモノマー(商品名 EX−321L、ナガセケムテックス社製)
(D):溶剤 シクロペンタノン(CP)
(E):フッ素系レベリング剤(商品名 メガファックF−470、DIC社製)
(F):シランカップリング剤(商品名 S−510、チッソ社製)
In addition, (A-1)-(F) in Table 2 shows the following, respectively.
(A-1): Photocationic polymerization initiator represented by the above formula (1) (trade name GSID26-1, manufactured by Ciba Specialty Chemicals)
(B-1): Epoxy resin represented by the formula (3) (trade name: EPON SU-8, manufactured by Resolution Performance Products, epoxy equivalent: 210 g / eq., Softening point: 85 ° C.)
(B-2): Epoxy resin represented by the above formula (4) (trade name: NC-3000H, Nippon Kayaku Co., Ltd., epoxy equivalent: 285 g / eq., Softening point: 65 ° C.)
(B-3): Epoxy resin represented by the formula (5) (trade name: NER-7604, manufactured by Nippon Kayaku Co., Ltd., epoxy equivalent: 347 g / eq., Softening point: 71 ° C.)
(PAG-1): Photocationic polymerization initiator (diphenyl [4- (phenylthio) phenyl] sulfonium = hexafluoroantimonate, trade name CPI-101A, manufactured by San Apro, 50% propylene carbonate solution)
(C): Reactive epoxy monomer (trade name EX-321L, manufactured by Nagase ChemteX Corporation)
(D): Solvent cyclopentanone (CP)
(E): Fluorine-based leveling agent (trade name MegaFuck F-470, manufactured by DIC)
(F): Silane coupling agent (trade name S-510, manufactured by Chisso Corporation)
表2に示すとおり、本発明の感光性樹脂組成物(実施例1〜実施例3)は比較例1に比べ、高感度でPCT耐性(基板への密着性が低下しない)が高いことが判った。 As shown in Table 2, it can be seen that the photosensitive resin compositions (Examples 1 to 3) of the present invention have higher sensitivity and higher PCT resistance (the adhesiveness to the substrate does not decrease) than Comparative Example 1. It was.
実施例4
(感光性樹脂組成物積層体)
上記実施例1にて得られた感光性樹脂組成物を膜厚15μmのポリプロピレン(PP)フィルム(ベースフィルム、東レ社製)上に均一に塗布し、温風対流乾燥機により65℃で5分間および80℃で20分間乾燥した後、露出面上に膜厚38μmのPPフィルム(カバーフィルム)をラミネートして、15μmの膜厚の感光性樹脂組成物積層体を調製した。
Example 4
(Photosensitive resin composition laminate)
The photosensitive resin composition obtained in Example 1 above was uniformly applied on a polypropylene (PP) film (base film, manufactured by Toray Industries, Inc.) having a film thickness of 15 μm, and heated at 65 ° C. for 5 minutes with a hot air convection dryer. And after drying for 20 minutes at 80 degreeC, PP film (cover film) with a film thickness of 38 micrometers was laminated on the exposed surface, and the photosensitive resin composition laminated body with a film thickness of 15 micrometers was prepared.
(感光性樹脂組成物積層体のパターニング)
前記で得られた感光性樹脂組成物積層体のカバーフィルムを剥離し、ロール温度70℃、エアー圧力0.2MPa、速度0.5m/minでシリコンウエハ上にラミネートし、これを6回繰り返して80μmの感光性樹脂組成物層を得た。この感光性樹脂組成物層に、i線露光装置(マスクアライナー:ウシオ電機社製)を用いてパターン露光(ソフトコンタクト、i線)を行った。その後、ホットプレートにより95℃で4分間PEBを行い、PGMEAを用いて浸漬法により23℃で4分間現像処理を行い、基板上に硬化した樹脂パターンを得た。最適露光量130mJ/cm2細線密着5μmと良好な結果が得られた。
(Patterning of photosensitive resin composition laminate)
The cover film of the photosensitive resin composition laminate obtained above was peeled off and laminated on a silicon wafer at a roll temperature of 70 ° C., an air pressure of 0.2 MPa, and a speed of 0.5 m / min. This was repeated 6 times. An 80 μm photosensitive resin composition layer was obtained. This photosensitive resin composition layer was subjected to pattern exposure (soft contact, i-line) using an i-line exposure apparatus (mask aligner: manufactured by Ushio Inc.). Thereafter, PEB was performed for 4 minutes at 95 ° C. using a hot plate, and development processing was performed for 4 minutes at 23 ° C. by immersion using PGMEA to obtain a cured resin pattern on the substrate. The optimum exposure amount was 130 mJ / cm 2 and the fine wire adhesion was 5 μm, and a good result was obtained.
実施例5〜14
(感光性樹脂組成物の調製、パターニング、感度評価、解像性評価及びPCT耐性評価)
表3に記載の配合成分からなる本発明の感光性樹脂組成物について、実施例1〜3に準じた方法で感度、解像性及びPCT耐性を評価した。結果を下記表3及び表4に示す。
Examples 5-14
(Preparation of photosensitive resin composition, patterning, sensitivity evaluation, resolution evaluation and PCT resistance evaluation)
About the photosensitive resin composition of this invention which consists of a mixing | blending component of Table 3, a sensitivity, resolution, and PCT tolerance were evaluated by the method according to Examples 1-3. The results are shown in Tables 3 and 4 below.
尚、表3及び表4における(B−1)、(B−2)、(B−3)、(A−1)、(C)、(D)、(E)及び(F)は、実施例1〜3で用いたのと同じものを示す。(B−4)〜(B−8)及び(B−10)はそれぞれ下記を示す。
(B−4):前記式(6)で表されるエポキシ樹脂(商品名 EOCN−103S、日本化薬社製、エポキシ当量214g/eq.、軟化点83℃、及び商品名 EOCN−4400H、日本化薬社製、エポキシ当量190g/eq.、軟化点60℃)
(B−5):前記式(7)で表されるエポキシ樹脂(商品名 NC−6300H、日本化薬社製、エポキシ当量232g/eq.、軟化点70℃)
(B−6):特許3698499号公報の合成例2に準じて合成したエポキシ樹脂(サンプル名 EP3698499、エポキシ当量350g/eq.)
(B−7):前記式(9)で表されるエポキシ樹脂(商品名 EPPN−201−L、日本化薬社製、エポキシ当量190g/eq.、軟化点72℃)
(B−8):前記式(10)で表されるエポキシ樹脂(商品名 EPPN−502H、日本化薬社製、エポキシ当量168g/eq.、軟化点60℃)
(B−10):前記式(12)で表されるエポキシ樹脂(商品名 XD−1000、日本化薬社製、エポキシ当量252g/eq.、軟化点73℃)
In Tables 3 and 4, (B-1), (B-2), (B-3), (A-1), (C), (D), (E) and (F) The same one used in Examples 1-3 is shown. (B-4) to (B-8) and (B-10) each show the following.
(B-4): Epoxy resin represented by formula (6) (trade name EOCN-103S, manufactured by Nippon Kayaku Co., Ltd., epoxy equivalent 214 g / eq., Softening point 83 ° C., and trade name EOCN-4400H, Japan Manufactured by Kayaku Co., Ltd., epoxy equivalent 190 g / eq., Softening point 60 ° C.)
(B-5): Epoxy resin represented by formula (7) (trade name NC-6300H, Nippon Kayaku Co., Ltd., epoxy equivalent 232 g / eq., Softening point 70 ° C.)
(B-6): Epoxy resin synthesized according to Synthesis Example 2 of Japanese Patent No. 3698499 (sample name EP3698499, epoxy equivalent 350 g / eq.)
(B-7): Epoxy resin represented by the above formula (9) (trade name EPPN-201-L, manufactured by Nippon Kayaku Co., Ltd., epoxy equivalent 190 g / eq., Softening point 72 ° C.)
(B-8): Epoxy resin represented by the formula (10) (trade name EPPN-502H, manufactured by Nippon Kayaku Co., Ltd., epoxy equivalent 168 g / eq., Softening point 60 ° C.)
(B-10): Epoxy resin represented by formula (12) (trade name XD-1000, manufactured by Nippon Kayaku Co., Ltd., epoxy equivalent 252 g / eq., Softening point 73 ° C.)
表3及び表4の実施例5〜14に示すとおり、本発明の感光性樹脂組成物は比較例1に比べ、高感度でPCT耐性(基板への密着性が低下しない)が高いことが判った。 As shown in Examples 5 to 14 of Table 3 and Table 4, it can be seen that the photosensitive resin composition of the present invention has higher sensitivity and higher PCT resistance (no decrease in adhesion to the substrate) than Comparative Example 1. It was.
本発明にかかる感光性樹脂組成物は、良好な画像解像度、熱安定性、耐薬品及び溶媒性特性を保有し、高感度でかつプレッシャークッカー試験(PCT)後の基板への密着性が低下しない樹脂パターンの形成に有用であり、特に、MEMS部品、MEMSパッケージ部品及び半導体パッケージ等の分野で寸法安定性が高く、耐久性の高い樹脂成形に適している。 The photosensitive resin composition according to the present invention possesses good image resolution, thermal stability, chemical resistance and solvent property, is highly sensitive, and does not deteriorate adhesion to the substrate after the pressure cooker test (PCT). It is useful for forming a resin pattern, and particularly suitable for resin molding with high dimensional stability and high durability in the field of MEMS parts, MEMS package parts, semiconductor packages and the like.
図1において、
1.カバーフィルム及びベースフィルムを取り除いた感光性樹脂組成物の積層体の硬化物、
2.感光性樹脂組成物の硬化物、
3.アルミニウム薄膜(厚さ1000Å)、
4.シリコンウエハ(厚さ500μm)、
をそれぞれ示す。
In FIG.
1. A cured product of the laminate of the photosensitive resin composition from which the cover film and the base film are removed,
2. Cured product of photosensitive resin composition,
3. Aluminum thin film (thickness 1000 mm),
4). Silicon wafer (thickness 500 μm),
Respectively.
Claims (7)
下記式(4)
下記式(5)
下記式(6)
下記式(7)
1分子中に少なくとも2個以上のエポキシ基を有するエポキシ化合物と1分子中に少なくとも1個以上の水酸基と1個のカルボキシル基を有する化合物との反応物に、多塩基酸無水物を反応させることにより得られるエポキシ樹脂(B−6)、
下記式(9)
下記式(10)
下記式(11)
下記式(12)
下記式(13)及び/又は式(14)
Following formula (4)
Following formula (5)
Following formula (6)
Following formula (7)
Reacting a polybasic acid anhydride with a reaction product of an epoxy compound having at least two epoxy groups in one molecule and a compound having at least one hydroxyl group and one carboxyl group in one molecule; Epoxy resin (B-6) obtained by
Following formula (9)
Following formula (10)
Following formula (11)
Following formula (12)
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KR20110019391A (en) | 2011-02-25 |
WO2010001919A1 (en) | 2010-01-07 |
TWI483066B (en) | 2015-05-01 |
KR101665147B1 (en) | 2016-10-11 |
JP5247396B2 (en) | 2013-07-24 |
TW201009497A (en) | 2010-03-01 |
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