201005810 Z66^〇pif.d〇C 九、發明說明： 【發明所屬之技術領域】 本發明是有關於一種製造半導體之裝置的请潔方法， 且特別是有關於一種沈積含碳膜之裝置的反應器的乾式清 潔方法。 【先前技術】 通常，藉由使用多個單元製程來製造半導體元件，諸 如離子植入製程（ion implantation process )、成膜製程（fdjn formation process)、擴散製程（diffusion process)、微影製 程（photolithography process )以及蝕刻製程（etehing process)。在上述單元製程中，為了增加半導體元件製造 的再現性及可靠性，改良成膜製程是必要的。 藉由使用以下方法將半導體元件的膜形成於晶圓上， 諸如滅鍍、蒸發、化學氣相沈積（chemical vapor deposition ’ CVD )以及原子層沈積（atomic layer deposition，ALD)等。用以執行上述方法的膜沈積裝置通 常包括反應器、供應各種氣體至反應器的氣體管線以及放 置晶圓的晶圓塊(wafer block)。 然而，當藉由使用膜沈積裝置進行成膜製程時，在成 膜製程期間産生的反應產物沈積於（附著於）半導體膜的 表面及反應11的_上。用以進行半導體大規模生産（廳8 production)的膜沈積裝置處理大量晶圓。因此，當在反應 産物附著至反應器的狀態下持續地進行半導體製程時，半 導體製程中的膜特性將改變。其最具代表性的㈣是膜電 201005810. xoojopif.doc 阻或厚度的改變以及由於反應產物的脫落而最終産生的粒 子。這些粒子在沈積製程中會導致缺陷並且附著於晶圓 上’這將導致半導體元件產量的退化。 因此’在習知的半導體製造方法中，在膜發生變化之 前’也就是在晶圓沈積製程進行預定時間後或者沈積預定 數量的晶圓後停止膜沈積裝置，並且將反應器暴露於空 氣，使得反應器和反應器的各元件彼此分開。在藉由使二 ⑩ 揮發性材質（諸如酒精）清潔沈積於反應器以及各元件上 的異物後，將分開的反應器重組。通常，這種清潔方法被 稱為非原位（ex_situ)清潔。在非原位清潔方法中，當製 造半導體時生產力顯著地降低，並且産生設備的改變點 (change-point) 〇 膜沈積裝置的另一種清潔方法是所謂原位（in_situ) 清潔的乾式清潔方法，藉由此方法可在不停止膜沈積裝置 運轉的情况下透過使用腐蝕性氣體來移除反應器内部的沈 積産物。例如，將 CF4、C2F6、C3F8、d、〇iF3、^ β 或nf3等全氟化合物氣體（perfluorized ec)mp()und 爲π潔氣體注入到反應器内，以清潔沈積石夕（ϋ)、氧化石夕 (SiOx)或氮化矽（SiNx)等膜之装置，而移除上述膜。 特別是，隨著半導體it件的積集度不斷上升，為了降 低漏電流，已嘗試將碳加入膜内，例如沈積諸如Si〇CH的 低介電常數（l〇w-k)膜。金屬氮化物膜（例如通）可包 含10-20%的碳。因此，在沈積含碳爲5%或更多的膜之襞 置中，當藉由使用習知的腐姓氣體進行乾式清潔時，會産 201005810 Z-OOJOpif.doc 生基於氟化碳（CF*)之白色粉末的副產物。因此，需要 一種沈積含碳膜之裝置的改良乾式清潔方法。 【發明内容】 本發明提供了一種沈積含碳膜之裝置的乾式清潔方 法。 根據本發明的一方面，提供了一種沈積含碳膜之裝置 的乾式清潔方法，此方法包括清潔此裝置的反應器的内 部，其中清潔此裝置的反應器的内部包括供應清潔氣體至 反應器，清潔氣體包括藉由使用遠程電漿産生器激活之鹵 素’並同時供應未激活之碳移除氣體至反應器。 在本發明中’清潔氣體可以是從由nf3、C2F6、cf4、 CHF3、FS及其組合所組成的群組中選擇的一種氣體。碳移 除氣體可以是包括氧(0)或氫(H)的氣體。碳移除氣體可以 是從由〇2、ΚΟ、Ο;、NH3、H2及其組合所組成的群組中 選擇的一種氣體。 在供應清潔氣體及碳移除氣體之前，此方法更包括進 行〇2處理，以預先移除存在於反應器内部之副産物表面上 的碳。在清潔反應器的内部之後，此方法更包括藉由使用 含氫氣體處理沈積含碳膜之裝置，以移除清潔氣體的殘 留。在此情况下，含氫氣體可以是從由H2、NH3、SiH4、 H2〇及其組合所組成的群組中選擇的一種氣體。 在清潔反應器的内部之後，此方法更包括藉由使用含 碳膜來陳化反應器的内部。 【實施方式】 201005810 ^201005810 Z66^〇pif.d〇C IX. Description of the Invention: [Technical Field] The present invention relates to a cleaning method for a device for manufacturing a semiconductor, and more particularly to a reaction for depositing a device containing a carbon film Dry cleaning method. [Prior Art] Generally, semiconductor elements are fabricated by using a plurality of unit processes, such as an ion implantation process, a fdjn formation process, a diffusion process, and a photolithography process. Process ) and the etching process (etehing process). In the above unit process, in order to increase the reproducibility and reliability of semiconductor device fabrication, it is necessary to improve the film formation process. A film of a semiconductor element is formed on a wafer by using, for example, deplating, evaporation, chemical vapor deposition (CVD), and atomic layer deposition (ALD). The film deposition apparatus for carrying out the above method generally includes a reactor, a gas line for supplying various gases to the reactor, and a wafer block for placing the wafer. However, when the film formation process is carried out by using a film deposition apparatus, the reaction product generated during the film formation process is deposited (attached) on the surface of the semiconductor film and on the surface of the reaction 11. A film deposition apparatus for performing semiconductor mass production (office 8 production) processes a large number of wafers. Therefore, when the semiconductor process is continuously performed in a state where the reaction product adheres to the reactor, the film characteristics in the semiconductor process will change. Its most representative (four) is the membrane power 201005810. xoojopif.doc The change in resistance or thickness and the resulting particles due to the shedding of the reaction product. These particles can cause defects and adhere to the wafer during the deposition process. This will result in degradation of the yield of the semiconductor device. Therefore, in the conventional semiconductor manufacturing method, before the film is changed, that is, after the wafer deposition process is performed for a predetermined time or after depositing a predetermined number of wafers, the film deposition device is stopped, and the reactor is exposed to the air, so that the reactor is exposed to the air. The reactor and the components of the reactor are separated from one another. The separate reactors are recombined after cleaning the foreign matter deposited on the reactor and the components by a 2,000 volatile material such as alcohol. Typically, this method of cleaning is referred to as ex_situ cleaning. In the ex-situ cleaning method, productivity is significantly reduced when manufacturing a semiconductor, and a change-point of the device is produced. Another cleaning method of the film deposition device is a so-called in-situ cleaning method. By this method, the deposition product inside the reactor can be removed by using a corrosive gas without stopping the operation of the film deposition apparatus. For example, a perfluorochemical gas (perfluorized ec) mp() und such as CF4, C2F6, C3F8, d, 〇iF3, ^β or nf3 is injected into the reactor to clean the sedimentary stone (ϋ), A device such as a film of oxidized stone (SiOx) or tantalum nitride (SiNx) is used to remove the above film. In particular, as the degree of integration of semiconductor devices continues to increase, in order to reduce leakage current, attempts have been made to add carbon into the film, for example, to deposit a low dielectric constant (l〇w-k) film such as Si〇CH. The metal nitride film (e.g., pass) may contain 10-20% carbon. Therefore, in the deposition of a film containing 5% or more of carbon, when dry cleaning is performed by using a conventional rot gas, the 201005810 Z-OOJOpif.doc is based on fluorinated carbon (CF*). a by-product of the white powder. Therefore, there is a need for an improved dry cleaning method for depositing a carbon containing film. SUMMARY OF THE INVENTION The present invention provides a dry cleaning method for depositing a device containing a carbon film. According to an aspect of the present invention, there is provided a dry cleaning method for depositing a carbonaceous film-containing apparatus, the method comprising cleaning an interior of a reactor of the apparatus, wherein cleaning the interior of the reactor of the apparatus comprises supplying a cleaning gas to the reactor, The cleaning gas includes a halogen activated by using a remote plasma generator and simultaneously supplies an unactivated carbon removal gas to the reactor. In the present invention, the cleaning gas may be a gas selected from the group consisting of nf3, C2F6, cf4, CHF3, FS, and combinations thereof. The carbon removal gas may be a gas including oxygen (0) or hydrogen (H). The carbon removal gas may be a gas selected from the group consisting of 〇2, ΚΟ, Ο; NH3, H2, and combinations thereof. The method further includes a 〇2 treatment to pre-removal of carbon present on the surface of by-products present inside the reactor prior to supplying the cleaning gas and the carbon removal gas. After cleaning the interior of the reactor, the method further includes removing the residual gas of the cleaning gas by treating the carbon-containing film with a hydrogen-containing gas. In this case, the hydrogen-containing gas may be a gas selected from the group consisting of H2, NH3, SiH4, H2, and combinations thereof. After cleaning the interior of the reactor, the method further includes aging the interior of the reactor by using a carbonaceous film. [Embodiment] 201005810 ^
‘oojopii.ClOC 現在將參照附圖更全面地描述本發明，本發明的範例 性實細例顯7F於義巾。然而，本發明可具體化爲不同形 式’並不應解釋爲侷限於本案所_的實施例。更確切地， 提供這些實施例是爲了使本發明透徹且完整，並向本領域 熟知此項技藝者全面地傳達本發明的概念。 首先’根據本發明的清潔方法可用i清潔圖1所示的 膜沈積裝置。‘oojopii.ClOC The present invention will now be described more fully hereinafter with reference to the accompanying drawings. However, the invention may be embodied in different forms and should not be construed as limited to the embodiments. Rather, these embodiments are provided so that this disclosure will be thorough and complete. First, the cleaning method according to the present invention can clean the film deposition apparatus shown in Fig. 1 by i.
圖1的膜沈積裝置i包括具有内部空間的反應器1〇、 安裝在反應器10的㈣空間内可升降且放置晶圓w的晶 圓塊12、噴射氣體的_ u，噴頭u使得膜形成於放置 在晶圓塊12上之晶圓w上。 ^置1用以在半導體晶圓w(例如’矽 3 基板)上沈積含碳膜。裝置1更包括氣 體供應裝置20’其可㈣氣歸線供應某—製程的源氣體 及惰性氣體到反應器1G。在根據本發明的清潔方法^，产 潔氣體包括鹵素，並且藉由使用遠程電漿産 ^ 潔氣體並其供應至反應器10。 激活/月 包括A素的清潔氣體可以是從由NF3、C2F6、e&、 CHF3、F2及其組合所組成的群組中選擇的_種;6二。 碳移除氣體可以是包括。1 μ '’、、 mm。μ。 例如，碳移除氣體 了 j疋從由02、Ν2〇、〇3、丽3、η2及其組合所組成的群 組中選擇的一種氣體。 接下來，將描述根據本發明實施例的圖】 反應器10的清潔方法。 衣Ϊ n 8 201005810. x〇〇j〇pif.doc 第一實施例 圖2是根據本發明第一實施例的清潔方法的流程圖。 參照圖1和圖2，在圖2的操作S1中，裝置1的反應 器10的内部壓力被調節成適合進行清潔。反應器内部 的壓力爲0.3-10托爾（torr)。隨著反應器1〇的内部壓力 降低，清潔效率增加。反應器1〇的内部壓力維持在〇.5_4 torr。 ❹ 接下來，在操作S2中，藉由供應清潔氣體至反應器 10’此清潔氣體包括藉由使用遠程電漿產生器22激活之_ 素，並且同時供應未被激活之碳移除氣體至反應器，在 不停止運轉裝置1的情况下清潔反應器1〇的内部。清潔操 作S2的時間根據反應器1〇的污染程度而變化，並且可根 據處理了 1〇〇〇個還是500個晶圓而變化。儘管根據條件而 有所變化，但含碳膜是以大約1000人/min的速度來移除。 因此，當處理1000個具有膜厚為2〇〇A的晶圓時，清潔要 β 進行200分鐘。 ' 當使用裝置1沈積諸如TaCN的膜時，包括鹵素的清 潔氣體可以是NF3 ’而碳移除氣體可以是〇2。藉由操作遠 ，電漿産生器22、電漿化清潔氣體並供應清潔氣體至反應 盗10可進一步最大化清潔效率。氬（Ar)可作爲用以産 生電裝的基本製程氣體（base process gas)。 當僅使用一般乾式清潔氣體的腐蝕氣體來進行清潔 盼，存在於反應器内的碳及氟化物會彼此反應而形成氟化 唆（fluoride carbon)並且産生固體形式的副產物。因此， 9 201005810 厶〇 〇 jopif.doc 反應器10無法完全地清潔。在本發明中，藉由使用包括鹵 素的清潔氣體且將碳移除氣體添加至包括鹵素的清潔氣體 來移除反應器10中的金屬副產物，可在不產生固體形式之 副產物的情况下清潔反應器10。因此，在處理預定數量之 晶圓後，在不停止運轉膜沈積裝置的情况下進行原位清 潔，使付膜沈積裝置的生産力得以最大化。特别是，藉由 部份激活的氣體來實現本發明。清潔氣體在激活狀態下使 用’而碳移除氣體在未被激活的情況下使用。 當清潔氣體及碳移除氣體同時激活並供應至反應器 匕們會彼此反應並産生有機副產物，例如聚四氣乙婦 (Teflon)。根據本發明人所進行的實驗結果，清潔氣體及 碳移除氣體的各自流量（flux)必須調節到非常窄的範圍 内以免産生有機副產物。因此，本發明提供了一種方法， 此方法透過僅激活清潔氣體來最大化清洗效率，並且在未 被激活碳移除氣體的情况下移除碳，同時 物。在此方法中，不需藉由精細調整清潔== 體的各自流量來避免有機副產物的産生。因此，反應器的 再現性極好，並且可獲得更寬的清潔製程容限（pro· margin)。 當清潔操作S2的反應完成時’進行移除殘留於反應 器1〇内之氣體的清洗_ S3。反應器1〇、氣體管線及遠 程電漿産生益22被清洗。這是因為清潔氣體等可能合殘留 於反應器10及氣體管線内。當此類問題不會笋生時曰’可省 略清洗操作S3。在此考量上，清洗氣體可以^隋性氣體， 201005810 ^««Depif.doc 例如Ar或N2。 第二實施例 根據:發清潔方法的流程圖。 潔方法’但與圖2之清潔方;^法類似於圖2中的清 操作。 +同之處在於還包括其他 參照圖1和圖3,在圖3 m 的内部壓力調節成適合進行清潔:乍S11中，將反應器10 接下來，在操作S12中， (操作SU)來氧化反應器了么處理。進行〇2處理 並預先移除碳。 。卩之副産物表面上的碳， 隨後，在操作S13中，藉由供庵生 此清潔氣體包㈣由使用_#^=廷應器1〇, 素，並且同時供雇去姑勢、革 ，生生器22激活之鹵 潔反應器ίο的内t 石炭移除氣體至反應器10來清 内之S13元成時，進行移除殘留在反應器10 内之呆作S14。圖2中的操作S3可作_作814。 f來’在操作S15中，藉由使用含氫氣體進一步進 1的操作’以移除清潔氣體的殘留。在此情况 二、3虱氣體可以是從ώ JJ2、殖3、卿、氏〇及其組合 =成的群组巾選擇的—種氣體。含氫氣體可簡單地進行清 或藉由在含氫氣體内産生電漿來進行處理。 _接下來’藉由使用含碳膜來進行陳化(seasoning)反 器10内。p的操作，並且使反應器最適於進行膜沈積 201005810 ^£88D 5pif.doc 在清潔完成後，爲了藉由裝載晶圓來進行膜沈積，恭 組合反應益10内的大氣。這是因爲會發生在清潔完成後第 一次沈積的膜與後續製程沈積的膜具有不同屬性（例如膜 厚度降低）的問題。因此，作爲清潔方法的最後操作，在 加載第一個晶圓之前，預先進行陳化操作S16，也就是在 反應器10的内部表面上覆蓋即將沈積於晶圓上之膜。& 儘管參照其範例性實施例具體顯示且描述了本發明， 但本領域熟知此項技術者應理解在不脫離如後續申請專利 範圍所定義之本發明的精神和範圍的情況下還可以進行各 種形式及細節上的修改。 根據本發明，可有效地清潔沈積含碳膜之裝置。藉由 供應清潔氣體至反應器，此清潔氣體包括藉由使用遠程電 漿産生器激活之鹵素，並且同時供應未被激活之碳移除氣 體至反應器來清潔反應器内部的金屬副產物，使得可以在 不産生固體形式之副產物的情况下清潔反應器。因此，在 處理預疋數篁的晶圓後，在不停止運轉沈積含碳膜之裝置 ® 的情况下進行原位清潔，使得沈積含碳膜之裝置的生產力 得以最大化。 特別是’在使用部份激活氣體的反應器清潔方法中， 清潔氣體是在激活狀態下使用，而碳移除氣體是在未被激 活的情況下使用。故在此方法中，反應器的再現性極好， 並且可獲得更寬的清潔製程容限。 如上所述，本發明提供了一種沈積含碳膜之裝置的原 位清潔方法。一般來說，藉由僅使用腐蝕氣體進行清潔時， 12 201005810 bpif.doc 會在反應器内產生固體形式的副產物，並且因此無法完全 地清潔反應器。在本發明中’藉由使用包括鹵素的清潔氣 體且添加碳移除氣體至包括_素的清潔氣體來移除反應器 中的金屬副產物，可在不產生固體形式之副產物的情况下 清潔反應器。 特別是’本發明介紹一種使用部份激活氣體的反應器 清潔方法。清潔氣體在激活狀態下使用，而礙移除氣體在 Φ 未被激活的情況下使用。在此方法中，反應器的再現性極 好，並且可獲得更寬的清潔製程容限。 【圖式簡早說明】 圖1繪示了用以進行根據本發明一實施例之清潔方法 的沈積含碳膜之裝置。 h 圖2是根據本發明第一實施例的清潔方法的流程圖。 圖3是根據本發明第二實施例的清潔方法的流程圖。 【主要元件符號說明】 I :膜沈積裝置 ® 10:反應器 II :喷頭 12 :晶圓塊 20:氣體供應裝置 22 :遠程電漿産生器 "W .晶圓 SI、S2、S3 :步驟The film deposition apparatus i of FIG. 1 includes a reactor 1 having an internal space, a wafer block 12 which is mounted in a (four) space of the reactor 10 and which can be raised and lowered, and a wafer w is placed, and a gas is sprayed to form a film. Placed on the wafer w on the wafer block 12. Set to 1 to deposit a carbon-containing film on a semiconductor wafer w (e.g., '矽 3 substrate). The apparatus 1 further includes a gas supply unit 20' which can supply a source gas of a certain process and an inert gas to the reactor 1G. In the cleaning method according to the present invention, the cleaning gas includes halogen, and the gas is supplied to the reactor 10 by using a remote plasma. Activation/Month The cleaning gas including the A element may be selected from the group consisting of NF3, C2F6, e&, CHF3, F2, and combinations thereof; The carbon removal gas can be included. 1 μ '’, mm. μ. For example, the carbon removal gas is a gas selected from the group consisting of 02, Ν2〇, 〇3, MN3, η2, and combinations thereof. Next, a cleaning method of the reactor 10 according to an embodiment of the present invention will be described.衣Ϊ n 8 201005810. x〇〇j〇pif.doc First Embodiment Fig. 2 is a flow chart of a cleaning method according to a first embodiment of the present invention. Referring to Figures 1 and 2, in operation S1 of Figure 2, the internal pressure of the reactor 10 of the apparatus 1 is adjusted to be suitable for cleaning. The pressure inside the reactor is from 0.3 to 10 torr. As the internal pressure of the reactor 1 降低 decreases, the cleaning efficiency increases. The internal pressure of the reactor 1〇 was maintained at 〇.5_4 torr. Next, in operation S2, by supplying a cleaning gas to the reactor 10', the cleaning gas includes activating the element by using the remote plasma generator 22, and simultaneously supplying the unactivated carbon removing gas to the reaction. The inside of the reactor 1 is cleaned without stopping the operation device 1. The time for cleaning operation S2 varies depending on the degree of contamination of the reactor 1 and can vary depending on whether one or 500 wafers are processed. The carbon-containing film was removed at a rate of about 1000 people/min, although it varied depending on conditions. Therefore, when 1000 wafers having a film thickness of 2 Å are processed, the cleaning is performed for β for 200 minutes. When a film such as TaCN is deposited using the apparatus 1, the cleaning gas including halogen may be NF3' and the carbon removal gas may be 〇2. By operating far, the plasma generator 22, the plasma cleaning gas, and the supply of cleaning gas to the reaction pirates 10 can further maximize cleaning efficiency. Argon (Ar) can be used as a base process gas for generating electrical equipment. When only the etching gas of a general dry cleaning gas is used for cleaning, the carbon and fluoride present in the reactor react with each other to form fluoride carbon and produce by-products in a solid form. Therefore, 9 201005810 厶〇 〇 jopif.doc Reactor 10 cannot be completely cleaned. In the present invention, the metal by-product in the reactor 10 can be removed by using a cleaning gas including a halogen and adding a carbon removing gas to a cleaning gas including a halogen, without generating a by-product of a solid form. The reactor 10 is cleaned. Therefore, after processing a predetermined number of wafers, in-situ cleaning is performed without stopping the operation of the film deposition apparatus, thereby maximizing the productivity of the film deposition apparatus. In particular, the invention is achieved by a partially activated gas. The cleaning gas is used in an activated state and the carbon removal gas is used without being activated. When the cleaning gas and carbon removal gas are simultaneously activated and supplied to the reactor, they react with each other and produce organic by-products such as Teflon. According to the experimental results conducted by the inventors, the respective fluxes of the cleaning gas and the carbon removal gas must be adjusted to a very narrow range to avoid the production of organic by-products. Accordingly, the present invention provides a method of maximizing cleaning efficiency by activating only a cleaning gas, and removing carbon, while neutralizing, without removing carbon by activated carbon. In this method, it is not necessary to avoid the generation of organic by-products by finely adjusting the respective flow rates of the cleaning == bodies. Therefore, the reproducibility of the reactor is excellent, and a wider cleaning process margin (pro· margin) can be obtained. When the reaction of the cleaning operation S2 is completed, the cleaning_S3 of the gas remaining in the reactor 1 is removed. Reactor 1 气体, gas line and remote plasma generated benefit 22 were cleaned. This is because a cleaning gas or the like may remain in the reactor 10 and the gas line. When such problems do not occur, the cleaning operation S3 can be omitted. In this consideration, the cleaning gas can be a gas, 201005810 ^««Depif.doc such as Ar or N2. Second Embodiment According to a flow chart of a cleaning method. The cleaning method 'but the cleaning method of Figure 2; ^ method is similar to the cleaning operation in Figure 2. + the same is that it also includes other reference to Figs. 1 and 3, in which the internal pressure of Fig. 3m is adjusted to be suitable for cleaning: in S11, the reactor 10 is next, in operation S12, (operation SU) is oxidized. What is the reactor? Perform 〇2 treatment and remove carbon in advance. . The carbon on the surface of the by-product of the crucible, and then, in operation S13, by supplying the cleaning gas package (4) by using _#^= ting, 1 〇, and at the same time, hiring to the abdomen, leather, and living When the gas is removed from the reactor 22, the gas is removed from the gas to the reactor 10 to remove the remaining S13 in the reactor 10. Operation S3 in FIG. 2 can be performed as 814. f is 'removed by the operation of further using hydrogen-containing gas in operation S15 to remove the residual of the cleaning gas. In this case, the gas may be selected from the group of ώJJ2, 33, 、, 〇, and combinations thereof. The hydrogen-containing gas can be simply cleaned or treated by generating a plasma in the hydrogen-containing gas. _ Next' is used in the seasoning reactor 10 by using a carbon-containing film. Operation of p and making the reactor most suitable for film deposition 201005810 ^£88D 5pif.doc After the cleaning is completed, in order to carry out film deposition by loading the wafer, the atmosphere in the reaction benefit 10 is combined. This is because the problem that the film deposited for the first time after the cleaning is completed has a different property (e.g., a decrease in film thickness) from the film deposited in the subsequent process. Therefore, as a final operation of the cleaning method, before the first wafer is loaded, the aging operation S16 is performed in advance, that is, the film on the inner surface of the reactor 10 is covered with the film to be deposited on the wafer. Although the present invention has been particularly shown and described with reference to the exemplary embodiments thereof, those skilled in the art should understand that the invention can be practiced without departing from the spirit and scope of the invention as defined by the appended claims. Modifications in various forms and details. According to the present invention, a device for depositing a carbon-containing film can be effectively cleaned. By supplying a cleaning gas to the reactor, the cleaning gas includes a halogen activated by a remote plasma generator, and simultaneously supplies an unactivated carbon removal gas to the reactor to clean the metal by-products inside the reactor. The reactor can be cleaned without producing by-products in solid form. Therefore, in-situ cleaning without disposing of the device for depositing a carbon-containing film after processing the pre-twisted wafers maximizes the productivity of the device for depositing the carbon-containing film. In particular, in the reactor cleaning method using a partial activation gas, the cleaning gas is used in an activated state, and the carbon removal gas is used without being activated. Therefore, in this method, the reproducibility of the reactor is excellent, and a wider cleaning process tolerance can be obtained. As described above, the present invention provides an in-situ cleaning method for depositing a carbon-containing film. In general, by cleaning with only corrosive gases, 12 201005810 bpif.doc will produce by-products in solid form in the reactor and therefore will not completely clean the reactor. In the present invention, by removing the metal by-product in the reactor by using a cleaning gas including a halogen and adding a carbon removing gas to a cleaning gas including _, it is possible to clean without producing a by-product of a solid form. reactor. In particular, the present invention describes a reactor cleaning method using a partially activated gas. The cleaning gas is used in an active state, and the removal gas is used when Φ is not activated. In this method, the reproducibility of the reactor is excellent, and a wider cleaning process tolerance can be obtained. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a view showing a device for depositing a carbonaceous film for carrying out a cleaning method according to an embodiment of the present invention. h Figure 2 is a flow chart of a cleaning method in accordance with a first embodiment of the present invention. Figure 3 is a flow chart of a cleaning method in accordance with a second embodiment of the present invention. [Description of main component symbols] I: Membrane deposition apparatus ® 10: Reactor II: Nozzle 12: Wafer block 20: Gas supply device 22: Remote plasma generator "W. Wafer SI, S2, S3: Step
Sll、S12、S13、S14、S15、S16 :步驟 13S11, S12, S13, S14, S15, S16: Step 13