201001296 九、發明說明： t W ^frΛ 本發明係有關於一種無線射頻識別（Radio Frequency IDentification ; RFID)標籤。 5 【先前技術】 迄今已知有各種RHD標籤，其藉電波且以非接觸方 式，與以讀寫器為代表之外部機器之間進行資訊處理。例 如已有一種RFID標籤之提案，RFID標籤係於薄片狀介電質 構件上載設電波通訊用之導體圖案及冗晶片所構成者。一 10般而言，RFID標籤包含有：介電質構件、設於該介電質構 件之表面及裏面中之一面之IC晶片及、具有配置於介電質 構件之導體圖案之天線(例如參考專利文獻1)。 又，已知有一種RFID標籤，其具有一橫越介電質構件 之表面及裏面呈帶狀延伸，且兩端連接於1(：晶片之環形天 15線(例如參考專利文獻2)。具有橫越介電質構件之表面及裏 面呈帶狀延伸之環形天線之RFII^f籤可一邊減少RnD整 體之面積’一邊亦能提昇天線之增益，拉長通訊距離。 .標籤上，為了使環形天線之頻率特性與刷〇標籤 之通訊頻率整合，可附加電容器。 20 f 1圖係習知技藝之RFID標籤由1C晶片㈣之俯視 圖，第2圖係第1圖所示之RFID標籤之a_a線剖視圖。 第1圖及第2圖所示之RFID標籤9〇包含有：由介電質材 ;斗^成之印刷基板9卜IC晶片93及天線圖案％。天線圖案 k越印刷基板91之表面及裏面延伸，形成環形天線L9。 5 201001296 環形天線L9的兩端連接於1C晶片93。由天線圖案92之與 晶片93連接之兩端各有電極部94、95互以同—方向延伸。 電極部94、95之相對的部分相接近’形成有電容器。9。可 被電氣性地視為電感器之環形天線L9與電容BC9並聯，藉 5環形天線L9之電感及電容器C9之電容，可得到影響通婦 性之共振頻率。 專利文獻1 :日本國發明專利申請案公開公報第2〇〇2_繼29號 專利文獻2 :曰本國發明專利申請案公開公報第2〇〇6_53833號 -般而言，RFID標籤之印刷基板的厚錢於製造階段 1〇上會產生依產品的不同所致之偏差。此狀況針對第丨圖及第 2圖所示之RHD標籤90亦同。印刷基板91之厚度丨所產生之 偏差係對環形天線L9的面積造成影響。結果使環形天線L9 之電感產生偏差，使共振頻率偏離設計值。例如在第丨圖及 第2圖所示之RFID標籤90中，令環形天線L9之電感為1，電 各器C9之電容為C，共振頻率f可以下述（丨）式表示。 f=l/(2^(LC)0·5) (1) 亦如該式（1)所示，共振頻率f按電感L變化。 在此，已知有例如一種微調(trimming)手法，其係切除 4刀用以形成電谷器之導體圖案，以調整電容器的電容， 2〇修正所產生的共振頻率之偏差者（例如參考專利文獻1)。 准，對每一個RFID標籤，進行微調需要龐大的勞力，使大 量生產之生產性降低。 t發明内容3 有鑑於上述情況，本說明書所載之多數實施型態乃提 201001296 供不需經切除或延長導體圖案之調整，即可 的偏差之RHD標籤。 率特性 達成上述目的之RFID標籤之基本型態係包含有. 介電質構件，係呈板狀者； ’ 天線圖案，係形成有延伸到前述介電質構件之 裏面之環形天線，該環形天線的兩端位於前述面及 中之一面者； 及晨面201001296 IX. INSTRUCTIONS: t W ^frΛ The present invention relates to a Radio Frequency IDentification (RFID) tag. 5 [Prior Art] Various RHD tags have been known so far, which perform information processing by radio waves and in a non-contact manner with an external device represented by a reader/writer. For example, there is a proposal for an RFID tag which is constructed by mounting a conductor pattern for radio wave communication and a redundant chip on a sheet-like dielectric member. In a general aspect, an RFID tag includes: a dielectric member, an IC chip disposed on one of a surface and a surface of the dielectric member, and an antenna having a conductor pattern disposed on the dielectric member (for example, reference) Patent Document 1). Further, there is known an RFID tag having a strip extending over the surface and the inside of the dielectric member and having both ends connected to 1 (the annular line 15 of the wafer (for example, refer to Patent Document 2). The RFII^f sign that traverses the surface of the dielectric member and the loop antenna extending in the strip can reduce the overall area of the RnD while improving the gain of the antenna and lengthening the communication distance. The frequency characteristics of the antenna are integrated with the communication frequency of the brush label, and a capacitor can be added. 20 f 1 The RFID tag of the conventional technology is a top view of the 1C chip (4), and the second figure is the a_a line of the RFID tag shown in FIG. The RFID tag 9A shown in Fig. 1 and Fig. 2 includes a dielectric material, a printed circuit board 9 and an IC pattern 93. The antenna pattern k is printed on the surface of the substrate 91. And extending inside to form a loop antenna L9. 5 201001296 Both ends of the loop antenna L9 are connected to the 1C chip 93. The electrode portions 94 and 95 of the antenna pattern 92 connected to the wafer 93 are extended in the same direction. The opposite part of the parts 94, 95 There is a capacitor formed near the capacitor. 9. The loop antenna L9, which can be electrically regarded as an inductor, is connected in parallel with the capacitor BC9. By the inductance of the loop antenna L9 and the capacitor of the capacitor C9, the resonance frequency affecting the woman's sexuality can be obtained. Document 1: Japanese Patent Application Publication No. 2 〇〇 2_ Continuation No. 29 Patent Document 2: 曰 National Invention Patent Application Publication No. 2-6-53833 - Generally, the thickness of a printed substrate of an RFID tag In the manufacturing stage, there is a variation depending on the product. This condition is also the same for the RHD label 90 shown in the second and second figures. The deviation of the thickness 印刷 of the printed substrate 91 is ring-shaped. The area of the antenna L9 is affected. As a result, the inductance of the loop antenna L9 is deviated, and the resonance frequency is deviated from the design value. For example, in the RFID tag 90 shown in the second and second figures, the inductance of the loop antenna L9 is 1, The capacitance of the electric device C9 is C, and the resonance frequency f can be expressed by the following formula: f=l/(2^(LC)0·5) (1) Also as shown in the formula (1), the resonance frequency f varies according to the inductance L. Here, for example, a trimming is known. The method is to cut a 4-blade to form a conductor pattern of the electric grid to adjust the capacitance of the capacitor, and to correct the deviation of the resonance frequency generated (for example, refer to Patent Document 1). For each RFID tag, Fine adjustment requires a lot of labor, which reduces the productivity of mass production. t OBJECT 3 In view of the above, most of the implementations described in this specification are for 201001296, which can be adjusted without the need to cut or extend the conductor pattern. The RHD label of the deviation. The basic type of the RFID tag that achieves the above-mentioned purpose includes: a dielectric member which is plate-shaped; and an antenna pattern formed to extend into the inside of the dielectric member. a loop antenna having two ends on the front surface and one of the sides; and the morning surface
電路晶片，係與前述天線圖案電性連接 形天線進行通訊者； 10 15 第1電極，係直接或者以導體為中介 天線之兩端中之一端，且伸展於前述一面上者；及 屯 第2電極’係以導體為中介，連接於前述環形天 :中相對於前述一端之另一端，且沿前述第i電極而伸展： 前述表面及裏面中相對於前述一面之另一面上者。 、 ,依本基本型態，雖然隨著介電質構件之厚度增加，環 形天線之電感亦增加，但以介電質構件為中㈣置之第^ 極及第2電極之間形成電容器，該電容器之電容亦隨著介電 質構件的厚度增加而增加^因此，使因介電質構件之厚度 所引起之電感的偏差所造成之共振頻率偏差，作用於抑制 電容偏差之面。藉此，不需藉切除或延長導體圖案所進行 之調整之狀態下即可抑制頻率特性的偏差。 [圖式簡單說明] 第1圖係習知技藝之RFID標籤由IC晶片側看之俯視圖。 第2圖係第1圖所示之RFID標鐵之AA線刻視圖。 20 201001296 第3圖係RFID標籤之具體第1實施型態由1C晶片側看之 俯視圖。 第4圖係第3圖所示之RFID標籤之B-B線剖視圖。 第5圖係RFID標籤之具體第2實施型態由1C晶片側看之 5 俯視圖。 第6圖係第5圖所示之RFID標籤之C-C線剖視圖。 第7圖係顯示RFID標籤之具體第3實施型態之剖視圖。 【實施方式3 如下針對基本型態，一邊參考附圖，一邊說明上述所 10 說明之RHD標籤之具體實施型態。 第3圖係RFID標籤之具體第1實施型態由IC晶片側看之 俯視圖，第4圖係第3圖所示之RFID標籤之B-B線剖視圖。 第3圖所示之RFID標籤10包含有：板狀介電質構件11、 天線圖案12、與天線圖案12連接之1C晶片13、又及，伸展 15 於介電質構件11之表面及裏面之各面上之第1電極14及第2 電極15。 RFID標籤10係一以非接觸方式，與未示於圖中之讀寫 器進行資訊處理之電子裝置，使讀寫器所發出之電磁場的 能量當作為電能，而在天線圖案12接收，以該電能，使1C 20 晶片13驅動。天線圖案12當做通訊用天線而作動，1C晶片 13實施以天線圖案12為中介之無線通訊。在此，1C晶片13 係相當於上述基本型態之電路晶片之一種型態。 此外，本發明的技術領域之該業者間，亦有時候將本 發明說明書所使用之「RHD標籤」之事項當作為「RHD標 201001296 籤」用之内部構成構件(鑲嵌；inlay)，稱 =:者。或者是，™標鐵」之事項稱為= 咖戴」。又，該「RFID標籤」亦包括非接觸㈣卡在内。 接著，針對RFID標籤1〇之各部分進行說明。 介電質構件U係以介電質材料形成。介電質材料係諸 如=脂，以聚乙烯對苯二甲賴PET)或環氧系樹脂為代表 之合成樹脂。 2圖案12、第丨電極H、及第2電極15係形成為在介 10 15 20 件成之導_案。天_案12賴越介電質 構件11之表面及裏面而呈帶狀延伸，形成環形天和。在 此，介電質構件U之表面及裏面中設有環形 12,之其中-面為表面，另-面為裏面。 ◎ 曰片13係、配置於介電f構件u之表面，經由焊料等 連接％形天線L1之兩端12a、丨烈，與 哪加術㈣巾介，接。 中之讀寫㉞行通訊。 4方式而與未示於圖 媒、車H極14係伸展於介電f電極11之表面之面上，且直 接連接於環开4 iτ + #由天绩m 、 ma。更詳而言之，第1電極14 方向相交U向突出。^絲與天線圖案I2延伸之 極14而伸展於介電質構件η之裏 面的面上，以導體為中介， 以，中相對於連接第lf=於咖^ 更詳而言之，第2細 貝穿則逑介電質構件11而形成 9 201001296 之貫通導體16為中介，而連接於另一端12b。 配置於介電質構件11之表面的環形天線L1之端12b及 配置於介電質構件11之裏面之第2電極15係以貫通導體16 為中介而短距離連接，與使導體經由介電質構件11之邊緣 5 之型態相比，更能減少寄生電阻或寄生電感。 第1電極及第2電極15隔著介電質構件11而相對配置， 藉第1電極14及第2電極15形成電容器C卜且使電容器C1及 環形天線L1相對於1C晶片13並聯。環形天線L1之頻率特性 係按環形天線L1及電容器C1之特性而決定。令環形天線L1 10 之電感為L，電容器C1之電容為C時，共振頻率f可以下述(2) 式表示。 f= 1/(2 7Γ (LC)0 5) (2) 在此，電容器Cl之電容C係於介電質構件11之介電率 為£1，第1電極14及第2電極15的各面積為S，第1電極14與 15 第2電極15間之距離，即介電質構件11之厚度為t時，可以 下述(3)表示。 C= ε r X S/t (3) 如上述(3)式所示，介電質構件11之厚度t增加時，電容 C便減少。製造RFID標籤10時，介電質構件11之厚度t係於 20 每個產品各有偏差。介電質構件11之厚度t，例如增加時， 環形天線L1之環圈長度變長，電感L增加。惟，介電質構件 11之厚度t增加時，如上述(3)式所示，電容器C1之電容C亦 減少。即，介電質構件11之厚度t增加時，電感L增加，電 容C減少。結果使得依電感L增加所造成之共振頻率f之變化 10 201001296 透過電容c之減少而受抑制。因此’可抑制因介電質構件η 之厚度t所產生之偏差所引起之共振頻率€的偏差。 其次，針對RFID標籤之具體第2實施型態進行說明在 下述第2實施型態之說明中，針對說明到目前之實施型能中 ，各要素同-的要素附上同—符號顯示，且針對與前^實 施型態之相異點進行說明。 第5圖係RFID標籤之具體第2實施型態由扣晶片侧看之 俯視圖，第6圖係第5圖所示之RFID標籤之c_c線剖視圖。 10 15 併第5及6圖所示之肝11}標籤2〇包含有：除了伸展於介電 質構件11之表面之面上之第丨電極24、及伸展於裏面之面上 之第2電極25，更具有設於介電質構件11内部之第3電極28 及第4電極29。 第3電極28係伸展於第1電極24及第2電極25之間，以導 體27為中介而連接於環形天線u之—端仏。又，第*電極 29係伸展於第！電極24與第3電㈣之間，以導體μ為中介 而連接於環形天線L1之另—端12b。連接環形天㈣之一端 12a及第3電極28之導體27係貫穿介電質構件^之貫通導 體。連接環形天壯1之另-帳、第2電極25及第3電極28 之導體16亦是貫穿介電質構件Π之貫通導體。藉其等第鴻 極24、第2電極25、第3電極28、及㈣極”形成電容器⑶ 更評細地說，藉第1電極24及鄰接於第1電極24之第4電極29 形成第1電容器⑶，藉第4電極π及鄰接於第4電極μ之第a 電和幵v成第2电谷器C2b ’且藉第3電極28及鄰接於第3電 極28之第2電極25形成第3電容器a。上述電容器⑶系藉第 20 201001296 1電容器C2a、f2電容器C2b 成者。 及第3電容器C2c之合成㈣ 藉於介f質構件丨㈣配置第3_8及第4電㈣， Lrf構件11之厚度懷大時，電容器的電容亦會增 之多:佈:電谷之電容器。x，_標籤20可藉諸如公知 之夕層佈線板同樣之製造方法製造者。 製造咖)標_時，介電親件u之厚 15 20 =顺第1電㈣綱極戰距離、第4電極2: 極28間之距離、然後第3電極28與第2電極2S間之距離 1任—種情形1及概略均等影響於上述三種距離之情 形。惟，在任—種情形時，例如介電質構件11之厚度t增加 人藉第1電合器C2a、第2電容器C2b、及第3電容器Ο。之 成所开/成之電容器C2之電容減少。結果造成即使介電質 構^11之厚度1有變化時，因環形天線L1巾之電感L之增加 所付到之共振頻率f之變化，藉電容器C2中電容C的減少而 受到抑制，此，时電質構仙之厚度辑產生之偏差所 引起之共振頻率f之偏差可受到抑制。 在上述具體之實施型態中，說明介電質構件之内部配 置2個電極之構成，但接著說明更增加介電質内部之電極之 第3實施型態。 第7圖係顯示RFID標籤之具體第3實施型態之剖視圖。 針對第3實施型態之RFID30，出現在俯視圖之構造係與第5 圖所示之第2實施型態之RFID20之俯視圖同一者，因此省略 俯視圖。又，在下述第3實施型態之說明中，對說明至此之 12 201001296 實施型態之各要素同一之要素 义+ # 京附與同-之符號，且針對與 月'J述之實她型態不同之要素進行說明。 第7圖所示之RFID標籤3〇 ^ ^ 保相對於參考第6圖說明之 RHD標戢20，不同點在於：在 5 10 構件11内部更設有伸 展於弟4電極29與第1電極24之間夕 气間之第5電極31、及伸展於第 5電極31與第1電極24之間之第6雷朽 $電極32。第5電極31係與第1 電極24及第3電極28 一同連接於環形天線u之一端1^。第6 電極32係鮮4電極⑽”電肋―_胁環形天扣 之另一端⑶。藉第1電極24、第6電極32、第5電觀、第4 電極29、第3電極Μ、及第2電極25形成電容器c3。獅標 _可形成電容更大之電容器C3，易對應於寬廣之共振頻 率。 在第7圖所示之RFID標鐵3〇中，與上述第i實施型態之 RFID標籤1〇及第2實施型態之RFID標籤2〇同樣，環形天線 15 L1之電感及電容器C3之電容係與介電質構件丨丨之厚度連 動：例如，介電質構件U之厚度t 一增加，以與第6^示 之第2實施型態之RFID標籤20同樣之原理，使環形天線u 之電感增加，另使電容器C3之電容減少。因此，依RFm標 籤30,介電質構件11之厚度t有變化時，環形天線參考第 20 5圖）之電感L之增加所造成之共振頻率f之變化，可藉電容 器C3中之電谷C之減少而被抑制。因此，可抑制因介電質 構件11之厚度t所衍生之偏差造成之共振頻率？之偏差。 此外，在對於具體的各實施型態之上述說明中，在「發 明内容」中所說明之基本型態之天線圖案中一個型態係顯 13 201001296 示帶狀延伸之天線圖案，但此天線圖案除了帶狀以外，亦 可為線狀。 又，在對於具體的各實施型態之上述說明中，在「發 明内容」中所說明之基本型態之第1電極中一個型態係顯示 5 與環形天線之兩端中之一端直接連接之第1電極14，但此第 1電極亦可為以導體為中介而連接於環形天線者。 又，在對於具體的各實施型態之上述說明中，第2電極 之一個型態係顯示以貫通導體為中介而連接者，但亦可為 諸如以環繞介電質構件之邊緣延伸之導體圖案而連接者。 10 【圖式簡單說明】 第1圖係習知技藝之RFID標籤由1C晶片側看之俯視圖。 第2圖係第1圖所示之RFID標籤之A-A線剖視圖。 第3圖係R Π D標籤之具體第1實施型態由IC晶片側看之 俯視圖。 15 第4圖係第3圖所示之RHD標籤之B-B線剖視圖。 第5圖係R FID標籤之具體第2實施型態由IC晶片側看之 俯視圖。 第6圖係第5圖所示之RHD標籤之C-C線剖視圖。 第7圖係顯示RHD標籤之具體第3實施型態之剖視圖。 20 【主要元件符號說明】 10.20.30.. . RFID 標籤 12b...另一端 11.. .介電質構件 13... 1C圖案 12.. .天線圖案 14,24...第1電極 12a. · ·—端 15,25...第2電極 14 201001296 16...貫通導體 92…天線圖案 27…導體 93...1C 晶片 28...第3電極 94,95…電極部 29...第4電極 Cl,C2,,C2a，C2b，C2c，C3，C9...電容器 31...第5電極 L1,L9…環形天線 32...第6電極 t...厚度 90... RFID 標籤 91…印刷基板 A,B，C...剖面線 15a circuit chip that communicates with the antenna pattern electrically connected antenna; 10 15 the first electrode is one of the two ends of the antenna directly or by the conductor, and extends on the one side; and the second electrode The electrode ' is connected by a conductor, and is connected to the other end of the annular day: opposite to the one end, and extends along the ith electrode: the surface and the other side of the inside relative to the other side. According to the basic type, although the inductance of the loop antenna increases as the thickness of the dielectric member increases, a capacitor is formed between the second electrode and the second electrode of the dielectric member. The capacitance of the capacitor also increases as the thickness of the dielectric member increases. Therefore, the resonance frequency deviation caused by the variation in inductance due to the thickness of the dielectric member acts on the surface where the capacitance deviation is suppressed. Thereby, the variation in the frequency characteristics can be suppressed without the need to perform the adjustment by cutting or extending the conductor pattern. [Simplified Description of the Drawings] Fig. 1 is a plan view of an RFID tag of the prior art viewed from the side of the IC chip. Fig. 2 is a view showing the AA line of the RFID target shown in Fig. 1. 20 201001296 Fig. 3 is a plan view showing the first embodiment of the RFID tag as seen from the 1C wafer side. Fig. 4 is a cross-sectional view taken along line B-B of the RFID tag shown in Fig. 3. Fig. 5 is a plan view showing a specific second embodiment of the RFID tag as seen from the side of the 1C wafer. Fig. 6 is a cross-sectional view taken along line C-C of the RFID tag shown in Fig. 5. Fig. 7 is a cross-sectional view showing a specific third embodiment of the RFID tag. [Embodiment 3] A specific embodiment of the RHD tag described in the above will be described with reference to the drawings, with reference to the drawings. Fig. 3 is a plan view showing the first embodiment of the RFID tag as seen from the side of the IC chip, and Fig. 4 is a cross-sectional view taken along line B-B of the RFID tag shown in Fig. 3. The RFID tag 10 shown in FIG. 3 includes a plate-shaped dielectric member 11, an antenna pattern 12, a 1C wafer 13 connected to the antenna pattern 12, and a surface 15 extending on the surface and inside of the dielectric member 11. The first electrode 14 and the second electrode 15 on each surface. The RFID tag 10 is an electronic device that performs information processing in a non-contact manner with a reader/writer not shown in the figure, so that the energy of the electromagnetic field emitted by the reader/writer is received as electrical energy, and is received at the antenna pattern 12. The electric energy drives the 1C 20 wafer 13 . The antenna pattern 12 is actuated as a communication antenna, and the 1C chip 13 performs wireless communication based on the antenna pattern 12. Here, the 1C wafer 13 is one type of a circuit wafer corresponding to the above basic type. Further, among those skilled in the art of the present invention, the "RHD label" used in the specification of the present invention is sometimes referred to as an internal structural member (inlay) of the "RHD standard 201001296". By. Or, the matter of the TM standard is called = café. In addition, the "RFID tag" also includes a non-contact (four) card. Next, each part of the RFID tag 1A will be described. The dielectric member U is formed of a dielectric material. The dielectric material is a synthetic resin typified by, for example, a fat, a polyethylene terephthalene PET or an epoxy resin. The pattern 12, the second electrode H, and the second electrode 15 are formed in a manner of forming 10 15 20 pieces. The sky_case 12 is on the surface and inside of the member 11 and extends in a strip shape to form a ring-shaped heaven. Here, the surface of the dielectric member U and the inside thereof are provided with a ring 12, wherein the - face is the surface and the other face is the inside. ◎ The cymbal sheet 13 is placed on the surface of the dielectric member f, and is connected to both ends 12a of the %-shaped antenna L1 via solder or the like, and is connected to the singer (four). In the 34-line communication. The four modes are not shown in the drawing medium, and the vehicle H pole 14 is extended on the surface of the surface of the dielectric f electrode 11, and is directly connected to the ring opening 4 iτ + # by the natural property m, ma. More specifically, the first electrode 14 protrudes in the U direction. The wire and the antenna pattern I2 extend from the pole 14 and extend over the inner surface of the dielectric member η, with the conductor as an intermediary, in the middle, relative to the connection lf=in the coffee, more specifically, the second fine shell The through-conductor 16 of the 9 201001296 is formed by the dielectric member 11 and is connected to the other end 12b. The end 12b of the loop antenna L1 disposed on the surface of the dielectric member 11 and the second electrode 15 disposed on the inner surface of the dielectric member 11 are connected by a short distance via the through conductor 16, and the conductor is passed through the dielectric. The shape of the edge 5 of the member 11 is more likely to reduce parasitic resistance or parasitic inductance. The first electrode and the second electrode 15 are opposed to each other via the dielectric member 11, and the capacitor C is formed by the first electrode 14 and the second electrode 15, and the capacitor C1 and the loop antenna L1 are connected in parallel with the 1C wafer 13. The frequency characteristic of the loop antenna L1 is determined by the characteristics of the loop antenna L1 and the capacitor C1. When the inductance of the loop antenna L1 10 is L and the capacitance of the capacitor C1 is C, the resonance frequency f can be expressed by the following formula (2). f = 1 / (2 7 Γ (LC) 0 5) (2) Here, the capacitance C of the capacitor C1 is based on the dielectric constant of the dielectric member 11 of £1, and each of the first electrode 14 and the second electrode 15 The area S is the distance between the first electrode 14 and the second electrode 15, that is, when the thickness of the dielectric member 11 is t, it can be expressed by the following (3). C = ε r X S/t (3) As shown in the above formula (3), when the thickness t of the dielectric member 11 is increased, the capacitance C is decreased. When the RFID tag 10 is manufactured, the thickness t of the dielectric member 11 is 20 in each product. When the thickness t of the dielectric member 11 is increased, for example, the loop length of the loop antenna L1 becomes long, and the inductance L increases. However, when the thickness t of the dielectric member 11 is increased, as shown in the above formula (3), the capacitance C of the capacitor C1 is also reduced. That is, when the thickness t of the dielectric member 11 is increased, the inductance L is increased and the capacitance C is decreased. As a result, the resonance frequency f caused by the increase in the inductance L is changed. 10 201001296 The transmission capacitance c is suppressed and suppressed. Therefore, it is possible to suppress the variation of the resonance frequency € caused by the deviation caused by the thickness t of the dielectric member η. Next, a description will be given of a specific second embodiment of the RFID tag. In the following description of the second embodiment, in the description of the present embodiment, the elements of the same element are attached with the same symbol, and The difference from the previous implementation mode will be described. Fig. 5 is a plan view showing a second embodiment of the RFID tag as seen from the side of the wafer, and Fig. 6 is a cross-sectional view taken along line c_c of the RFID tag shown in Fig. 5. 10 15 and the liver 11} label 2〇 shown in FIGS. 5 and 6 includes: a second electrode 24 excluding the surface extending over the surface of the dielectric member 11, and a second electrode extending on the inner surface Further, the third electrode 28 and the fourth electrode 29 provided inside the dielectric member 11 are further provided. The third electrode 28 extends between the first electrode 24 and the second electrode 25, and is connected to the end of the loop antenna u by the conductor 27. Also, the *th electrode 29 is extended in the first! Between the electrode 24 and the third electric (four), the conductor μ is connected to the other end 12b of the loop antenna L1. The conductor 27 connecting one end 12a of the annular day (4) and the third electrode 28 penetrates the through conductor of the dielectric member. The conductor 16 that connects the ring, the second electrode 25, and the third electrode 28 is also a through conductor that penetrates the dielectric member. The first electrode 24 and the fourth electrode 29 adjacent to the first electrode 24 are formed by the first electrode 24, the second electrode 25, the third electrode 28, and the (four) electrode forming capacitor (3). The capacitor (3) is formed by the fourth electrode π and the a-th electric and 幵v adjacent to the fourth electrode μ into the second electric bar C2b', and the third electrode 28 and the second electrode 25 adjacent to the third electrode 28 are formed. The third capacitor a. The capacitor (3) is formed by the 20th 201001296 1 capacitor C2a and the f2 capacitor C2b. The third capacitor C2c is synthesized. (4) The 3rd and the fourth (4th) are arranged by the intermediate component (4), and the Lrf component is disposed. When the thickness of 11 is large, the capacitance of the capacitor is also increased: cloth: capacitor of the electric valley. x, _ label 20 can be manufactured by the same manufacturing method as the well-known layer wiring board. The thickness of the dielectric member u is 15 20 = the distance between the first electric (four) polar battle distance, the fourth electrode 2: the distance between the poles 28, and then the distance between the third electrode 28 and the second electrode 2S. 1 and the case of roughly equalizing the above three distances. However, in any case, for example, the thickness t of the dielectric member 11 is increased by the first electric The capacitor C2a, the second capacitor C2b, and the third capacitor Ο reduce the capacitance of the capacitor C2 that is turned on/off. As a result, even if the thickness 1 of the dielectric structure is changed, the loop antenna L1 is used. The variation of the resonance frequency f which is added by the increase of the inductance L is suppressed by the decrease of the capacitance C in the capacitor C2, and the deviation of the resonance frequency f caused by the deviation of the thickness of the electric texture can be suppressed. In the above specific embodiment, a configuration in which two electrodes are disposed inside the dielectric member will be described. However, a third embodiment in which the electrode inside the dielectric is further increased will be described. Fig. 7 shows the RFID tag. 3 is a cross-sectional view of the third embodiment. The RFID 30 of the third embodiment is the same as the top view of the RFID 20 of the second embodiment shown in Fig. 5, and therefore the plan view is omitted. In the description of the third embodiment, the elements of the same embodiment of the 12 201001296 embodiment are described as the same element meaning + #京附和同-the symbol, and the difference is different from the monthly description of the month. The elements are explained. The RFID tag 3 shown in Fig. 7 is different from the RHD standard 20 described with reference to Fig. 6, except that the inside of the 5 10 member 11 is further provided with an extension of the electrode 4 and the first electrode 24 The fifth electrode 31 between the evening air and the sixth lightning electrode 32 extending between the fifth electrode 31 and the first electrode 24. The fifth electrode 31 is together with the first electrode 24 and the third electrode 28. It is connected to one end of the loop antenna u. The sixth electrode 32 is a fresh 4 electrode (10) "electric rib" - the other end of the ring (3). The capacitor c3 is formed by the first electrode 24, the sixth electrode 32, the fifth electroscope, the fourth electrode 29, the third electrode Μ, and the second electrode 25. The lion standard _ can form a capacitor C3 with a larger capacitance, which is easy to correspond to a wide resonant frequency. In the RFID target 3A shown in Fig. 7, the inductance of the loop antenna 15 L1 and the capacitance of the capacitor C3 are the same as those of the RFID tag 1〇 of the i-th embodiment and the RFID tag 2〇 of the second embodiment. In conjunction with the thickness of the dielectric member :: for example, as the thickness t of the dielectric member U is increased, the loop antenna u is made by the same principle as the RFID tag 20 of the second embodiment shown in the sixth embodiment. The inductance increases and the capacitance of capacitor C3 is reduced. Therefore, according to the RFm tag 30, when the thickness t of the dielectric member 11 is changed, the change of the resonance frequency f caused by the increase of the inductance L of the loop antenna with reference to FIG. 25 can be obtained by the electric valley C in the capacitor C3. It is suppressed and reduced. Therefore, the resonance frequency due to the deviation derived from the thickness t of the dielectric member 11 can be suppressed? Deviation. Further, in the above description of the specific embodiments, one type of antenna pattern 13 201001296 in the antenna pattern of the basic type described in the "Summary of the Invention" shows a strip-shaped extended antenna pattern, but the antenna pattern In addition to the strip shape, it may be linear. Further, in the above description of the specific embodiments, one of the first electrodes of the basic type described in the "Summary of the Invention" shows that 5 is directly connected to one of the ends of the loop antenna. Although the first electrode 14 is used, the first electrode may be connected to the loop antenna by a conductor. Further, in the above description of the specific embodiments, one type of the second electrode is shown as being connected by a through conductor, but may be a conductor pattern extending, for example, around the edge of the dielectric member. And the linker. 10 [Simple description of the drawings] Fig. 1 is a plan view of the RFID tag of the prior art viewed from the side of the 1C wafer. Fig. 2 is a cross-sectional view taken along line A-A of the RFID tag shown in Fig. 1. Fig. 3 is a plan view showing the first embodiment of the R Π D label as seen from the side of the IC wafer. 15 Fig. 4 is a cross-sectional view taken along line B-B of the RHD label shown in Fig. 3. Fig. 5 is a plan view showing a specific second embodiment of the R FID tag as seen from the side of the IC wafer. Fig. 6 is a cross-sectional view taken along line C-C of the RHD label shown in Fig. 5. Fig. 7 is a cross-sectional view showing a specific third embodiment of the RHD tag. 20 [Description of main component symbols] 10.20.30.. . RFID tag 12b... The other end 11:. Dielectric member 13... 1C pattern 12: Antenna pattern 14, 24... 1st electrode 12a. · End 15, 25... 2nd electrode 14 201001296 16... Through conductor 92... Antenna pattern 27... Conductor 93...1C Wafer 28... Third electrode 94, 95... Electrode part 29 ...fourth electrode Cl, C2, C2a, C2b, C2c, C3, C9... capacitor 31... fifth electrode L1, L9... loop antenna 32... sixth electrode t... thickness 90 ... RFID tag 91...printed substrate A, B, C... hatching 15