200952091 九、發明說明： 【發明所屬之技術領織】 本發明係有關於一種拾取沿著界道而分割晶圓之元件 的元件拾取方法，前述晶圓係於表面上形成有多數格子狀 5界道(street)，且由該等多數界道所劃分的多數區域中形成 有元件並貼附於切割膠帶上者。 C先前技術3 發明背景 ❹ 10 15 ❹ 譬如半導體元件製造程序中，係於略圓板形狀之半導 體晶圓的表面上，在依形成為格子狀之界道(切斷預定線) 而劃分的多數區域中形成1C、LSI等之元件，並且藉沿著界 道而分割形成有該元件之各區域，而製造各個半導體晶 片。作為分割半導體晶圓之分割裝置，—般係使用稱為Z 割（dicing)裝置之切削裝置，該切削裝置係藉厚度為加从瓜 程度的切削片，沿著界道而切削半導體晶圓。如此，經分 割之半導體晶片’係經封裝而廣泛地利用於行動電話及電 腦等電氣機器。 經各自分割之半導體晶片’於其背面係安裝有以環氧 樹脂等形成且厚度為20 # m〜40 μ m，稱晶片附著膜(Die 2〇 AttachFilm)之黏晶用的黏結薄膜，藉對經該黏結薄膜而支 撐半導體晶片之黏晶架進行加熱壓著而進行接合。作為於 半導體晶片之背面安裝黏晶用之黏結薄膜的方法，係於半 導體晶圓的背面貼附黏結薄膜，並經由該黏結薄膜而將半 導體晶圓貼附於切割膠帶後，沿著形成於半導體晶圓表面 200952091 上的界道，利用切削片而與黏結薄膜共同進行切削，藉此， 形成於背面安裝有黏結薄膜之半導體晶片（參照譬如專利 文獻1)。 [專利文獻1]曰本專利公開公報特開2000- 182995號 5 近年來’行動電話及電腦等電氣機器係謀求更輕量 化、小型化，而要求更薄之半導體晶片。作為更薄地分割 半導趙晶片之技術’所5胃先切割再研磨法(Dicing Before Grinding)之分割技術係實用化。此先分割再研磨法，係由 半導體晶圓的表面，沿界道而形成預定深度(相當於半導體 10晶片之完成厚度的深度)之分割溝，之後，研削表面上業已 形成有分割溝之半導體晶圓的背面，讓分割溝露出於該背 面而分離為各個半導體晶片之技術，且可將半導體晶片之 厚度加工為50 μ m以下。 然而，藉先切割後研磨法而將半導體晶圓分離為各個 15半導體晶片時，係由半導體晶圓的表面，沿界道而形成預 定深度份之分割溝後’研削半導體晶圓之背面而讓分割溝 露出於該背面，因此，無法事先將黏晶用之黏結薄膜安裝 於半導體晶圓之背面。故，將藉先切割後研磨法而加以分 割之半導體晶片接合於黏晶架時，半導體晶片與黏晶架之 20間必須邊插入接合劑而邊進行動作，具有無法流暢地實施 接合作業之問題。 為解決此問題，提出有一種如下述之半導體晶片之製 造方法’即’於藉先切割後研磨法而分割為各個半導艎晶 片之半導體晶圓的背面，貼附黏晶用之黏結薄膜，經由該 200952091 黏結薄膜而將半導體晶圓貼附於切割膠帶後，對於露出各 半導體晶片間之間隙的黏結薄膜部分，由半導體晶片之表 面側通過上述間隙而照射雷射光線，去除露出於黏結薄膜 之上述間隙的部分(譬如參照專利文獻2)。 5 [專利文獻2]日本專利公開公報特開2002 — 118081號 【發明内容】 發明揭示 發明欲解決之課題 再者，若沿著黏結薄膜係沿界道而加以分割之元件， 10藉切削片或雷射光線而進行切斷，黏結薄膜之外周部係與 切割膠帶的黏著糊混纏糾結，而由切割膠帶拾取元件時將 產生鬍鬚狀之塵埃，並附著於安裝在元件背面的黏結薄膜 上，成為產生黏晶不良或打線不良之原因。 本發明係有鑑於上述事實而創作完成者，主要之技術 15課題在於提供一種元件的拾取方法，其係由切割膠帶拾取 元件時縱或產生鬍鬚狀之塵埃，鬍鬚狀之塵埃不會殘存於 切割膠帶而附著於安裝在元件背面之黏結薄膜上者。 用以欲解決課題之手段 為解決前述主要之技術課題，本發明提供一種安裝有 2〇黏結薄膜之元件的拾取方法，係將表面上形成有多數格子 狀界道且由該等多數界道所劃分之多數區域中形成有元件 之晶圓的背面，經由黏結薄膜而貼附於安裝在環狀框架的 切割膠帶上，且將該晶圓及該黏結薄膜沿著該等多數界道 分割為個別之該元件，並在安裝有該黏結薄膜之狀態下， 200952091 由該切割膠帶拾取該元件； 安物結薄臈之元件的拾取方法包含有： 張構件而:T序，係於保持該環狀框架之狀態下，藉擴 =而按壓該切割膠帶中之該環狀框架的内徑與晶圓間 張該切割膠帶而加大前述元件間及該黏結薄 膜間之間隔；及 t勝帶上之前述元件間及_結_間之間隔的狀態下， 由該切割膠帶拾取前述元件及該黏結薄膜； 10 且於該膠帶擴張程序中，該擴張構件與該切割谬帶抵 與«保㈣構的相對移動速度係設定 為刚㈣秒以上’且加切述元件間及該黏結薄膜間之間 隔係没定為100 // m以上。 以下 前述膠帶擴張程序中，宜將黏結薄膜冷卻至⑽ 15 發明效果 依本發明，於膠帶擴張程序中，擴張構件與切割膠帶 抵接時之擴張構件與柩架保持機構的相對移動速度，係設 定為議臟/秒以上，且加大該元件間及該黏結薄膜間之間 隔係設定為100㈣以上，因此，由切割膠帶拾取元件時雖 20會產生鬍鬚狀之塵埃，但鬍鬚狀之塵埃並不會殘存於切割 膠帶而附著於黏結薄膜上。 圖式簡單說明 第1圖係顯示於背面安裝有黏晶用之黏結薄膜的半導 體晶圓，貼附於安裝在環狀框架之切割膠帶上的狀態之立 200952091 體圖。 第2圖係顯不第1圖所示之半導體晶圓及黏結薄膜經分 割為各個元件之狀態的立體圖。 第3圖係用以實施本發明中安裝有黏結薄膜之元件的 5拾取方法之拾取裝置的立體圖。 • _第4圖係折解第3圖所示之拾取裝置的重要部分而加以 顯示之立體圖。 © 第5圖係顯示用以構成第3圖所示之拾取裝置的第2工 1作台與框架保持機構及膠帶擴張機構的剔面圖。 第6(a)圖至第6(c)圖係顯示本發明中安裝有黏結薄膜 之疋件的拾取方法中之膠帶擴張程序的說明圖。 第7圖係顯示本發明中安裝有黏結薄膜之元件的拾取 方法中之拾取程序的說明圖。200952091 IX. Description of the Invention: The present invention relates to a component picking method for picking up components of a wafer which is divided along a boundary, and the wafer is formed with a plurality of lattices on the surface. Street, and the majority of the areas divided by the majority of the boundaries are formed with components and attached to the dicing tape. C. Prior Art 3 Background of the Invention 15 10 15 譬 For example, in the semiconductor device manufacturing process, the majority of the semiconductor wafers on the surface of the substantially circular plate shape are divided by the boundaries formed by the grid (the planned line to be cut). An element such as 1C, LSI, or the like is formed in the region, and each semiconductor wafer is manufactured by dividing each region of the device by dividing the boundary. As a dividing device for dividing a semiconductor wafer, a cutting device called a dicing device is generally used, which cuts a semiconductor wafer along a boundary by a cutting piece having a thickness of about guar. Thus, the divided semiconductor wafers are widely used in electrical equipment such as mobile phones and computers. The semiconductor wafers which are respectively divided are attached with a bonding film formed of an epoxy resin or the like and having a thickness of 20 #m to 40 μm, which is called a die attach film (Die 2〇AttachFilm). The bonded crystal frame supporting the semiconductor wafer via the bonded film is bonded by heating and pressing. As a method of attaching a bonding film for a die bond on a back surface of a semiconductor wafer, a bonding film is attached to a back surface of a semiconductor wafer, and a semiconductor wafer is attached to the dicing tape via the bonding film, and formed along the semiconductor The boundary on the wafer surface 200952091 is cut by the bonding film together with the bonded film, whereby a semiconductor wafer having a bonded film on its back surface is formed (see, for example, Patent Document 1). [Patent Document 1] Japanese Laid-Open Patent Publication No. 2000-182995 5 In recent years, electric devices such as mobile phones and computers have been required to be lighter and smaller, and thinner semiconductor wafers have been demanded. As a technique for thinning a semi-conductive wafer, the segmentation technique of Dicing Before Grinding is practical. The first division and re-polishing method is a division trench formed by a surface of a semiconductor wafer at a predetermined depth (corresponding to a depth of a completed thickness of the semiconductor 10 wafer) along a boundary, and then a semiconductor having a trench formed thereon is formed on the surface of the semiconductor wafer. The back surface of the wafer is a technique in which the division trench is exposed on the back surface and separated into individual semiconductor wafers, and the thickness of the semiconductor wafer can be processed to 50 μm or less. However, when the semiconductor wafer is separated into 15 semiconductor wafers by the first dicing and polishing method, the surface of the semiconductor wafer is formed along the boundary to form a predetermined depth portion of the trench, and then the back surface of the semiconductor wafer is grounded. Since the division groove is exposed on the back surface, the adhesive film for die bonding cannot be attached to the back surface of the semiconductor wafer in advance. Therefore, when the semiconductor wafer divided by the first dicing and polishing method is bonded to the bonded crystal frame, the semiconductor wafer and the bonded crystal frame 20 must be inserted while inserting the bonding agent, and the bonding operation cannot be performed smoothly. . In order to solve this problem, there has been proposed a method for manufacturing a semiconductor wafer as described below, that is, a back surface of a semiconductor wafer which is divided into individual semiconductor wafers by a first dicing and post-grinding method, and a bonding film for bonding a crystal, After the semiconductor wafer is attached to the dicing tape via the 200952091 adhesive film, the portion of the adhesive film exposing the gap between the semiconductor wafers is irradiated with the laser beam through the gap on the surface side of the semiconductor wafer to remove the exposed film. The portion of the gap described above (for example, refer to Patent Document 2). [Patent Document 2] Japanese Laid-Open Patent Publication No. 2002-118081. SUMMARY OF THE INVENTION The problem to be solved by the invention is that, if the component is divided along the boundary along the bonded film, 10 The laser light is cut off, and the outer peripheral portion of the bonded film is entangled with the adhesive tape of the dicing tape, and when the component is picked up by the dicing tape, whisker-like dust is generated and adhered to the adhesive film mounted on the back surface of the component. It is the cause of poor adhesion or poor wire bonding. The present invention has been made in view of the above facts. The main subject of the present invention is to provide a method for picking up components by picking up components by cutting tape or by generating whisker-like dust, and the whisker-like dust does not remain in the cutting. The tape is attached to the adhesive film mounted on the back side of the component. Means for Solving the Problems In order to solve the above-mentioned main technical problems, the present invention provides a picking method for an element having a 2-inch bonded film, in which a plurality of lattice-like boundaries are formed on the surface and by the majority of the boundaries The back surface of the wafer in which the component is formed in a plurality of regions is attached to the dicing tape mounted on the annular frame via the adhesive film, and the wafer and the adhesive film are divided into individual along the majority of the boundaries The component, and in the state in which the adhesive film is mounted, 200952091 picks up the component by the dicing tape; the picking method of the component of the thinner entangled body includes: a member: a T-order, which is used to hold the ring frame In the state of the ring, pressing the inner diameter of the annular frame in the dicing tape and the dicing tape between the wafers to increase the interval between the components and the bonding film; and the aforementioned The component and the adhesive film are picked up by the dicing tape in a state of spacing between the components and the _ junction _; and in the tape expansion process, the expansion member is in contact with the cutting tape (Iv) the relative moving speed protection system configuration of a second is set to (iv) immediately above 'and the line between compartments Gache said inter-element and not the adhesive film as 100 // m or more. In the tape expansion process described below, it is preferable to cool the adhesive film to (10). According to the present invention, in the tape expansion process, the relative movement speed of the expansion member and the truss holding mechanism when the expansion member abuts against the dicing tape is set. In order to discuss the dirty / second or more, and increase the interval between the components and the adhesive film is set to 100 (four) or more, therefore, when the component is picked up by the dicing tape, 20 will produce whisker-like dust, but the whisker-like dust does not It will remain on the dicing tape and adhere to the adhesive film. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a view showing a state in which a semiconductor wafer having a bonding film for a die bond is attached to a back surface and attached to a dicing tape of a ring frame. Fig. 2 is a perspective view showing a state in which the semiconductor wafer and the bonded film shown in Fig. 1 are divided into respective elements. Fig. 3 is a perspective view showing a pick-up device for carrying out the pickup method of the component in which the adhesive film is mounted in the present invention. • Fig. 4 is a perspective view showing a significant portion of the pickup device shown in Fig. 3. © Fig. 5 is a cross-sectional view showing the second working table, the frame holding mechanism, and the tape expanding mechanism for constituting the pick-up device shown in Fig. 3. Fig. 6(a) to Fig. 6(c) are explanatory views showing a tape expanding procedure in the picking method of the member in which the adhesive film is attached in the present invention. Fig. 7 is an explanatory view showing a pickup procedure in the pickup method of the component in which the adhesive film is mounted in the present invention.
H 15用以實施發明之最佳形態 Q 以下，參照添附圖式，詳細說明本發明之安裝有黏結 薄膜之元件的拾取方法之較佳實施態樣。 此處’說明有關在背面安裝有黏結薄膜之晶圓的形態。 第1圖係顯示於半導體晶圓2之背面安裝有黏晶用之黏 20結薄膜3，且該黏結薄膜3係貼附於安裝在環狀框架4之切割 膠帶40的表面上之狀態。第1圖所示之半導體晶圓2係於表 面2a上形成有格子狀多數界道21 ’且由該等多數界道21所 劃分的多數區域中形成有元件22 ^黏結薄膜3係由厚度20" m〜40/zm之環氧樹脂膜構成，且邊以8CTC〜20CTC之溫度 200952091 加熱，邊按壓於半導體晶圓2之背面而加以安裝。上述環狀 框架4係以厚度為1mm之不銹鋼而形成為環狀。前述切割膠 帶40於圖式之實施態樣中，係於厚度為7〇#m之聚氣乙烯 (PVC)所組成的片材基材的表面上，塗佈丙烯酸樹脂系之糊 5 為厚度5 /z m程度。 如前述，貼附於安裝在環狀框架4之切割膠帶40的表面 上之半導體晶圓2，係藉包含切削片之切削裝置，沿著多數 界道21，如第2圖所示般地分割為各個元件22。此時，安裝 於半導體晶圓2之背面上的黏晶用之黏結薄膜3亦同時加以 10 切斷。 藉所謂先切割後研磨法而將半導體晶圓2分割為各個 元件，係使用切削裝置且沿著形成於半導體晶圓2之表面2a 上的界道21’而形成預定深度(相當於各半導體晶片之完成 厚度的深度)之分割溝(分割溝形成程序）。其次，於形成有 15分割溝之半導體晶圓2的表面安裝保護構件，並研削半導體 曰曰圓2之背面，讓为割溝露出於背面’藉此而分割為各個元 件22(分割溝露出程序）。如此，分割為各個元件22之半導體 晶圓2的背面上，係安裝有黏晶用之黏結薄膜3。再者，將 黏結薄膜3係安裝於背面上之半導體晶圓2(分割為各個元 20件22)的黏結薄膜3，貼附於安裝在前述環狀框架4之切割膠 帶40的表面上’且沿著分割溝而對黏結薄膜3照射雷射光 線，而沿著分割溝切斷黏結薄膜3。因此，半導體晶圓2沿 著多數界道2所分割之各個元件22以及沿著分割溝所切斷 之黏結薄膜3，如第2圖所示，成為貼附於安裝在環狀框架4 200952091 ❹ 10 15 ❿ 20 之切割膠帶40的表面上之狀態。 如前述，經由黏結薄膜3而貼附於切割膠帶4〇之表面上 的各個元件22，係搬送至拾取裝置，並由切割膠㈣而加 以拾取。此處，有關拾取裝置之—例，係參照第3圖至第$ 圖進行說明。 第3圖係顯示拾取裝置之立體圖，第4圖係分解顯示第〕 圖所示之拾取裝置之重要部分的立體圖。拾取裝置5包含 有：基台51 ;第1工作台52，係可在箭頭γ所示方向上移動 地配設於該基台51上；及第2工作台53，係可在與箭頭丫正 交之箭頭X所示的方向上移動地配設於該第！工作台52上。 基台51係形成為矩形狀，且其兩側部上方面，二條導軌 511，512係相互平行地配設在箭頭γ所示方向上。又，於兩 條導軌其中之一導軌511，在其上方面係形成有剖面為乂字 狀之導溝511a。 刖述第1工作台52係如第4圖所示，於中央部形成為具 有矩形狀開口 521之窗框形。於該第1工作台52之—側部下 方面，被導引軌532係可滑動地嵌合於導溝511a内，該導溝 511a係形成於設置在前述基台51之其中一導軌511上者。 又，在第1工作台52之兩側部上方面，二條導軌523 524係 相互平行地配置於與前述被導引軌522正交之方向上。又， 於一條導軌523,524之其中一導軌523，在其上方面係形成 有剖面為V字狀之導溝523a。如此而構成之第1工作台52係 如第3圖所示，可將被導引軌522嵌合於形成於設置在基台 51之其中一導軌511上的導溝51 la内，並將另一之侧部下方 11 200952091 面載置於設置在基台51之另一導軌512上。拾取裝置5包含 有第1移動機構54,其係沿著設置於基台51上的導軌 511，512 ’在箭頭Y所示方向上移動第1工作台52者。如第4 圖所示，該第1移動機構54係由下述構件組成，即：公螺紋 5 桿541，係與設置於基台51上之另一導軌512平行地配設 者；轴承542，係可旋轉地支撐配設於基台51上之公螺紋桿 541其中一端部者；脈衝電動機543，係用以使連結於公螺 紋桿541另一端之公螺紋桿541旋轉驅動者；及母螺紋塊 544，係螺合於設置在前述第1工作台52下方面之公螺紋桿 10 541者。如此構成之第1移動機構54，係藉驅動脈衝電動機 543而旋轉公螺紋桿541，讓第1工作台52於箭頭γ所示方向 上移動。 如第4圖所示，前述第2工作台53係形成為矩形狀，且 於中央部具有圓形之凹洞531。於該第2工作台53其中一側 15部下方面，被導引軌532係可滑動地嵌合於導溝523a内，該 導溝523a係形成於設置在上述第1工作台52其中一導軌523 上者。如此構成之第2工作台53係如第3圖所示，可將被導 弓丨軌532嵌合於形成於設置在第1工作台52其中一導軌523 上的導溝523a内，並將另一之側部下方面載置於設置在第1 2〇工作台52之另一導軌524上。拾取裝置5包含有第2移動機構 55 ’其係沿著設置於第1工作台52上的導軌523,524，在箭 碩X所示方向上移動第2工作台53者。如第4圖所示，該第2 移動機構55係由下述構件組成，即：公螺紋桿551，係與毁 置於第1工作台52上之另一導軌524平行地配設者；輛承 12 200952091 552 ’係可旋轉地支撐配設於第1工作台52上之公螺紋551其 中一端部者；脈衝電動機553，係用以使連結於公螺紋桿551 另端之公螺紋桿551旋轉驅動者；及母螺紋塊554，係螺 合於设置在前述第2工作台53下方面之公螺紋551者。如此 5構成之第2移動機構55，係藉驅動脈衝電動機553而旋轉公 螺紋柃551，讓第2工作台53於箭頭χ所示方向上移動。 拾取裝置5包含有：框架保持機構6 ，係用以保持上述 環狀框架4者；及膠帶擴張機構7，係用以擴張安裝於保持 在該框架保持機構6之環狀框架4上的切割膠帶者 。如第3圖 10及第5圖所示，框架保持機構6係由下述構件組成，即：環 狀之框架保持構件61 ’係具有較設置於前述第2工作台53之 凹洞531的直徑大之内徑者；及多數夾鉗62，係配設於該框 架保持構件61之外周者。框架保持構件61之上方面係形成 用以載置環狀框架4之載置面611，且環狀框架4載置於該載 I5置面611上。再者，載置於載置面611上之環狀框架4，係藉 夾鉗62而固定於框架保持構件&上。如此構成之框架保持 機構6，係配設於第2工作台53之凹洞531的上方，並藉後述 之膠帶擴張機構7而可於上下方向前進及後退地受到支撐。 膠帶擴張機構7係如第3圖及第5圖所示，包含配設於上 2〇述環狀之框架保持構件61内側之擴張圓筒70。該擴張圓筒 7〇具有較環狀框架4之内徑小，且較貼附於安裝在該環狀框 架4之切割膠帶4〇上的半導體晶圓2之外徑更大的内徑及外 徑。又，擴張圓筒70於下端部具有安裝部71，其係可旋動 地嵌合於設置在前述第2工作台53之凹洞531的内周面者， 13 200952091 並且擴張圓筒70於該安裝部71之上侧外周面，具有突出於 徑方向而形成之支撐凸緣72。膠帶擴張機構7係包含有可讓 前述環狀之框架保持機構6於上下方向前進及後退之支撐 構件73。該支撐構件73係由配設於上述支撐凸緣72上之多 5數氣壓缸730組成，其活塞桿731係連結於上述環狀之框架 保持構件61的下方面。如此，由多數氣壓缸73〇組成的支撐 構件73，係可在基準位置、分離位置與擴張位置間選擇性 > 地移動，前述基準位置係如第5圖及第6(a)圖所示，載置面 611為環狀之框架保持構件61與擴張圓筒7〇之上端呈大略 ❹ 10相同高度處；前述分離位置係如第6(b)圖所示，載置面611 為環狀之框架保持構件61由擴張圓筒70之上端而達圖中於 上方距預定量處；前述擴張位置係如第6(c)圖所示，載置面 611為環狀之框架保持構件61由擴張圓筒7〇之上端而達圖 中距預定量下方處。因此，由多數氣壓缸730組成的支撐構 15件73，係作為讓擴張圓筒70與框架保持構件61於上下方向 (軸方向）做相對性地移動之擴張移動機構而作用。 如第3圖所示，拾取裝置5包含有用以讓前述擴張圓筒 ^ 70及框架保持構件61加以旋動之旋動機構75。該旋動機構 75係由下述構件組成，即：脈衝電動機751，係配設於上述 20第2工作台53 ;滑輪752，係安裝於該脈衝電動機751之旋轉 轴上，及環形皮帶753 ’係捲繞於該滑輪752與擴張圓筒70 之支樓凸緣72上。如此構成之旋動機構75，係藉驅動脈衝 電動機751 ’經滑輪752及環形皮帶753而讓擴張圓筒70旋 動。 14 200952091 拾取裝置5係包含有用以檢測半導體晶圓撕個別分割 出之辑22的制機構8，前述半導體晶圓2係經切割勝帶 4〇而加以支撑於保持在前述環狀之框架保持構件η之環 狀框架4上者。檢測機構8係安裝於配設在基台5如字狀的 5 10 15 ❹ 20 支撐柱町。該檢測機構8係以絲线及攝像元件(ccd) =構成，且肋拍攝經切娜帶4G，而支撐於保持在前述 从之框架保持構件61之環狀购4上的半導體晶圓2所個 I割出的το件22 ’並將之變換為電性信號而傳送至未圖 式之控制機構。 拾取裝置5進-步包含有拾取機構9，其係由切割膠帶 而拾取經個別分割之元件22。該拾取機構$係由配設於基 台51上之旋轉臂9卜以及安裝於該旋轉臂91前端之拾取爽 頭92組成，旋轉臂91係藉未圖式之驅動機構而加以旋轉。 又’旋轉臂91係構成為可上下動作，安裝於前端之拾取夾 頭92 ’係可拾取貼附於切娜帶4G上且經個別分割之元件 22。 再次參照第5圖，拾取裝置5包含有配設於用以構成膠 帶擴張機構7之擴張圓筒％内的冷卻機構丨〇。該冷卻機構1〇 係冷卻流體噴射頭1G1朝上地加以配設，且與未圖示之冷卻 流體供给機構相連通。 拾取裝置5係構成為如上所述，而有關使麟拾取裝置 5 ’由切割膠帶4〇拾取經黏結薄媒3而貼附於前述切割膠帶 表面上的各個元件22之順序，主要係參照第6圖及第7圖 來進行說明。 15 200952091 如前述第2圖所示，將經由切割膠帶40而支撐於背面上 安裝有黏結薄膜3之各個元件22的環狀框架4,如第6(a)圖所 示地載置於用以構成框架保持機構6之框架保持構件“的 載置面611上’並藉夾鉗62而固定於框架保持構件叫框架 5保持程序）。此時，框架保持構件61係位在第6(a)圖所示之 基準位置。 如第6(a)圖所示，將經由切割膠帶4〇而支撐於背面上安 裝有黏結薄膜3之各個元件22的環狀框架4，固定於位在基 準位置之框架保持構件61上時，係可讓作為用以構成膠帶 10擴張機構7之支揮構件73的多數氣壓缸動作，而令環狀之框 架保持構件61上升至第6(b)圖所示之分離位置（分離位置定 位程序）。 其次，讓作為用以構成膠帶擴張機構7之支撐構件73 的多數氣壓缸730動作，使環狀之框架保持構件61 — 口氣下 15降至如第6(c)圖所示之擴張位置。因此固定於框架保持構件 61之載置面611上的環狀框架4亦下降’故，如第6(c)圖所 示’安裝於環狀框架4上之切割膠帶40，係與擴張圓筒70之 上端緣抵接並受到擴張(膠帶擴張程序八此時，環狀之框體 保持構件61，即，安裝於環狀框架4上之切割膠帶40，係由 20 第6(b)圖所示之分離位置下降，因此與擴張圓筒70之上端緣 抵接時，係達到預定的移動速度。又，切割膠帶40與擴張 圓筒70之上端緣抵接時的預定移動速度為100mm/秒以上 係為重要之情事。由該結果，對於貼附在切割膠帶40上之 各個元件22背面所安裝的黏結薄膜3，擴張力係放射狀地急 200952091 5 ❹ 10 速作用，經個別分割之元件22及黏結薄膜3間之間隔係急遽 地擴大。用以增加如前述方式而予以擴大之經個別分割的 元件22以及黏結薄膜3間之間隔’為1〇〇 V m以上係重要之情 事。因此，沿界道21且藉寬度20//m之切削片來切斷半導體 晶圓2時，於膠帶擴張程序中’係可讓元件22及黏結薄膜3 間之間隔加大至120/zm以上。又，實施前述膠帶擴張程序 時’如第6(a)圖所示，位在基準位置時，宜讓冷卻機構10 動作並由冷卻流體喷射頭101喷射出冷卻流體，將黏結薄膜 3冷卻至l〇°C以下。 15❹ 若如前述地業已實施膠帶擴張程序，係可讓第丨移動機 構54及第2移動機構55動作，以令第1工作台52在箭頭Y所示 方向（參照第3圖）上移動，並讓第2工作台53在箭頭X所示方 向（參照第3圖）上移動，使得安裝於保持在框架保持構件61 之環狀框架4上的切割膠帶4〇所貼附之各個元件22,位在檢 測機構8之正下方。又，讓檢測機構8動作，以確認各個元 件22間之間隙是否與箭頭γ所示方向或箭頭又所示方向一 致。右各個兀件22間之間隙與箭頭γ所示方向或箭頭又所示 方向有所偏差，係可讓旋動機構75作用而義框架保持機 構6以令其為一致。接著，讓第1工作台52在箭頭Υ所示方向 20 (參照第3圖）上移動’並讓^作台53在箭頭χ所示方向(參 照第3圖）上移動，同時如第7圖所示，讓拾取機構9作動， 藉拾取夹權餘取位在敢位置之元件22(拾取程序），並 將之搬運至未圖示之托盤或黏晶程序。 前述拾取程序中， 疋件22係在背面安裝有黏結薄膜3 17 200952091 之狀態，由切割膠帶40剝離並加以拾取。此時，黏結薄臈3 , 之外周部係與黏結膠帶40之黏著糊交纏相混，且由切割膠 帶40拾取元件22時會產生鬍鬚狀之塵埃，然而，於前述膠 帶擴張程序中，將經個別分割之元件22及黏結薄膜3間之間 5隔予以加大時，係100mm/秒以上之移動速度，並且用以加 大元件22及黏結薄膜3間之間隔為100；czm以上，因此，前述 ， 鬍鬚狀之塵埃不會殘存於切割膠帶40側，並不會附著於黏 * 結薄膜3上。依本案發明者之實驗，可知前述移動速度越是 慢於100mm/秒，前述鬍鬚狀之塵埃附著於黏結薄膜3之比 〇 10例越尚，又，用以加大元件22及黏結薄膜3間之間隔越是小 於100/im，前述鬍鬚狀之塵埃附著於黏結薄膜3上之比例越 高。再者，可知前述膠帶擴張程序中，藉讓黏結薄膜3冷卻 至10°C以下，進行前述拾取時之前述鬍鬚狀的塵埃附著於 黏結薄膜3上之比例係更為減少。 15 【圖式《簡孕软《明】 第1圖係顯示於背面安裝有黏晶用之黏結薄賴科 體晶圓，貼附於安裝在環狀框架之切割膠帶上的狀態之立 體圖。 第2圖係顯示第i圖所示之半導體晶圓及黏結薄膜經分 20割為各個元件之狀態的立體圖。 第3圖係用以實施本發明中安裝有黏結薄膜之元件的 拾取方法之拾取裝置的立體圖。 第4圖係拆解第3圖所示之拾取裝置的重要部分而加以 顯示之立艎圖。 18 200952091 第5圖係顯示用以構成第3圖所示之拾取裝置的第2工 作台與框架保持機構及膠帶擴張機構的剖面圖。 第6(a)圖至第6(c)圖係顯示本發明中安裝有黏結薄膜 之元件的拾取方法中之膠帶擴張程序的說明圖。 5 第7圖係顯示本發明中安裝有黏結薄膜之元件的拾取 方法中之拾取程序的說明圖。H 15 is the best mode for carrying out the invention. Hereinafter, a preferred embodiment of the pickup method of the component to which the bonded film of the present invention is attached will be described in detail with reference to the accompanying drawings. Here, the form of the wafer on which the adhesive film is attached on the back side will be described. Fig. 1 shows a state in which a bonding film 3 for bonding a crystal is attached to the back surface of a semiconductor wafer 2, and the bonding film 3 is attached to a surface of a dicing tape 40 attached to the annular frame 4. The semiconductor wafer 2 shown in Fig. 1 has a lattice-shaped majority boundary 21' formed on the surface 2a, and a plurality of regions 22 are formed by the majority of the boundaries 21. The bonding film 3 is made of a thickness of 20" The epoxy resin film of m~40/zm is formed and heated while being heated at a temperature of 8CTC to 20CTC of 200952091, and is pressed against the back surface of the semiconductor wafer 2. The annular frame 4 is formed in a ring shape by stainless steel having a thickness of 1 mm. In the embodiment of the drawing, the dicing tape 40 is applied to the surface of a sheet substrate composed of polystyrene (PVC) having a thickness of 7 〇 #m, and the paste 5 coated with an acrylic resin is a thickness of 5 /zm degree. As described above, the semiconductor wafer 2 attached to the surface of the dicing tape 40 mounted on the annular frame 4 is divided by the cutting device including the cutting piece along the majority of the boundary 21 as shown in FIG. For each element 22. At this time, the adhesive film 3 for the die-bonding film mounted on the back surface of the semiconductor wafer 2 is also cut by 10 at the same time. The semiconductor wafer 2 is divided into individual elements by a so-called first dicing method, and a predetermined depth is formed by using a cutting device along a boundary 21' formed on the surface 2a of the semiconductor wafer 2 (corresponding to each semiconductor wafer) The dividing groove of the depth of the finished thickness (the dividing groove forming program). Next, a protective member is mounted on the surface of the semiconductor wafer 2 on which the 15 division grooves are formed, and the back surface of the semiconductor dome 2 is ground, and the cut groove is exposed on the back surface, thereby dividing into individual elements 22 (dividing groove exposure procedure) ). Thus, the adhesive film 3 for die bonding is attached to the back surface of the semiconductor wafer 2 divided into the respective elements 22. Further, the adhesive film 3 is attached to the surface of the semiconductor wafer 2 (divided into 20 pieces 22) of the back surface, and is attached to the surface of the dicing tape 40 attached to the annular frame 4'. The bonded film 3 is irradiated with laser light along the dividing groove, and the bonded film 3 is cut along the dividing groove. Therefore, the respective elements 22 divided by the semiconductor wafer 2 along the majority of the boundaries 2 and the adhesive film 3 cut along the dividing grooves are attached to the annular frame 4 as shown in FIG. 2, 200952091 ❹ 10 15 ❿ 20 The state of the surface of the dicing tape 40. As described above, the respective members 22 attached to the surface of the dicing tape 4 through the adhesive film 3 are conveyed to the pickup device and picked up by the dicing glue (4). Here, an example of the pickup device will be described with reference to Figs. 3 to #. Fig. 3 is a perspective view showing the pick-up device, and Fig. 4 is a perspective view showing an essential part of the pick-up device shown in the figure. The pick-up device 5 includes a base 51; the first table 52 is movably disposed on the base 51 in the direction indicated by the arrow γ; and the second table 53 is alignable with the arrow In the direction indicated by the arrow X, it is arranged in the first place! On the work table 52. The base 51 is formed in a rectangular shape, and on both side portions, the two guide rails 511, 512 are disposed in parallel with each other in the direction indicated by the arrow γ. Further, one of the two guide rails 511 is formed with a guide groove 511a having a U-shaped cross section. As described in Fig. 4, the first stage 52 is formed in a sash shape having a rectangular opening 521 at the center. The guide rail 532 is slidably fitted into the guide groove 511a, and the guide groove 511a is formed on one of the guide rails 511 of the base 51, in the lower side portion of the first table 52. . Further, on both side portions of the first stage 52, the two rails 523 524 are arranged in parallel with each other in the direction orthogonal to the guided rail 522. Further, one of the guide rails 523 of one of the guide rails 523, 524 is formed with a guide groove 523a having a V-shaped cross section. As shown in FIG. 3, the first stage 52 configured as described above can be fitted into the guide groove 51 la formed on one of the guide rails 511 of the base 51, and the other stage 52 can be fitted into the guide groove 51 la provided on one of the guide rails 511 of the base 51. A side underneath 11 200952091 is placed on the other rail 512 disposed on the base 51. The pickup device 5 includes a first moving mechanism 54 that moves the first table 52 in the direction indicated by the arrow Y along the guide rails 511, 512' provided on the base 51. As shown in Fig. 4, the first moving mechanism 54 is composed of a male thread 5 rod 541 which is disposed in parallel with another guide rail 512 provided on the base 51; a bearing 542, Rotatingly supporting one end of the male threaded rod 541 disposed on the base 51; the pulse motor 543 is for rotating the male threaded rod 541 coupled to the other end of the male threaded rod 541; and the female thread The block 544 is screwed to the male threaded rod 10 541 provided in the lower side of the first stage 52. In the first moving mechanism 54 configured as described above, the male screw rod 541 is rotated by the drive pulse motor 543, and the first table 52 is moved in the direction indicated by the arrow γ. As shown in Fig. 4, the second stage 53 is formed in a rectangular shape and has a circular recess 531 at the center. The guide rail 532 is slidably fitted into the guide groove 523a, and the guide groove 523a is formed on one of the guide rails 523 provided on the first table 52 in the lower side of the second table 53. The above. As shown in FIG. 3, the second table 53 configured as described above can be fitted into the guide groove 523a formed on one of the guide rails 523 of the first table 52, and the other second guide table 532 can be fitted into the guide groove 523a provided on one of the guide rails 523 of the first table 52. The lower side of one side is placed on the other rail 524 disposed on the first stage 52. The pick-up device 5 includes a second moving mechanism 55' which moves along the guide rails 523, 524 provided on the first table 52 and moves the second table 53 in the direction indicated by the arrow X. As shown in Fig. 4, the second moving mechanism 55 is composed of a member, that is, a male threaded rod 551 which is disposed in parallel with another rail 524 which is placed on the first table 52; The bearing 12 200952091 552 'rotates to support one end of the male thread 551 disposed on the first table 52; the pulse motor 553 is for rotating the male threaded rod 551 connected to the other end of the male threaded rod 551 The driver; and the female screw block 554 are screwed to the male screw 551 provided in the lower side of the second table 53. In the second moving mechanism 55 having the fifth configuration, the male screw 551 is rotated by the drive pulse motor 553, and the second table 53 is moved in the direction indicated by the arrow χ. The pick-up device 5 includes a frame holding mechanism 6 for holding the annular frame 4, and a tape expanding mechanism 7 for expanding the dicing tape attached to the annular frame 4 held by the frame holding mechanism 6. By. As shown in Figs. 3 and 5, the frame holding mechanism 6 is composed of a member having an annular frame holding member 61' having a diameter smaller than that of the recess 531 provided in the second table 53. The larger inner diameter; and the plurality of clamps 62 are disposed outside the frame holding member 61. On the upper side of the frame holding member 61, a mounting surface 611 on which the annular frame 4 is placed is formed, and the annular frame 4 is placed on the carrying surface 611. Further, the annular frame 4 placed on the mounting surface 611 is fixed to the frame holding member & by a clamp 62. The frame holding mechanism 6 configured as described above is disposed above the recess 531 of the second table 53, and is supported by the tape expanding mechanism 7 to be advanced in the vertical direction and backward. As shown in Figs. 3 and 5, the tape expanding mechanism 7 includes an expanding cylinder 70 disposed inside the frame holding member 61 of the above-described annular shape. The expansion cylinder 7 has a smaller inner diameter than the annular frame 4 and is attached to the inner diameter and outer diameter of the semiconductor wafer 2 mounted on the dicing tape 4 of the annular frame 4 path. Further, the expansion cylinder 70 has a mounting portion 71 at a lower end portion thereof, and is rotatably fitted to an inner circumferential surface of the recess 531 provided in the second table 53, 13 200952091 and the expansion cylinder 70 is The outer peripheral surface of the upper side of the mounting portion 71 has a support flange 72 formed to protrude in the radial direction. The tape expanding mechanism 7 includes a supporting member 73 that allows the frame holding mechanism 6 of the above-described ring shape to advance and retreat in the vertical direction. The support member 73 is composed of a plurality of five-pneumatic cylinders 730 disposed on the support flange 72, and the piston rod 731 is coupled to the lower side of the annular frame holding member 61. As described above, the support member 73 composed of the plurality of pneumatic cylinders 73A can be selectively moved between the reference position, the separation position, and the expansion position, as shown in Figs. 5 and 6(a). The mounting surface 611 has an annular frame holding member 61 at the same height as the upper end of the expanding cylinder 7〇; the separating position is as shown in Fig. 6(b), and the mounting surface 611 is annular. The frame holding member 61 is extended from the upper end of the cylinder 70 to a predetermined distance in the figure; the expansion position is as shown in Fig. 6(c), and the frame holding member 61 having the mounting surface 611 is annular The upper end of the cylinder 7 is expanded to be below the predetermined amount in the figure. Therefore, the support member 15 composed of the plurality of pneumatic cylinders 730 functions as an expansion moving mechanism that relatively moves the expansion cylinder 70 and the frame holding member 61 in the vertical direction (axial direction). As shown in Fig. 3, the pickup device 5 includes a rotary mechanism 75 for rotating the expansion cylinder 70 and the frame holding member 61. The rotation mechanism 75 is composed of a pulse motor 751 disposed on the 20th second table 53 and a pulley 752 attached to the rotation shaft of the pulse motor 751, and an endless belt 753'. It is wound around the pulley 752 and the branch flange 72 of the expansion cylinder 70. The rotation mechanism 75 thus constructed is rotated by the drive pulse motor 751' via the pulley 752 and the endless belt 753. 14 200952091 The pick-up device 5 includes a mechanism 8 for detecting a semiconductor wafer to be individually detached, and the semiconductor wafer 2 is supported by the frame-retaining member held by the ring-shaped frame 4 The ring frame 4 of η is on. The detecting mechanism 8 is attached to a support column of 5 10 15 ❹ 20 which is arranged in a shape of a base 5. The detecting mechanism 8 is composed of a wire and an imaging element (ccd)=, and the rib is photographed by the dicing tape 4G, and is supported by the semiconductor wafer 2 held on the ring-shaped package 4 of the frame holding member 61. The I cut out the piece 22' and convert it into an electrical signal and transmit it to the control mechanism of the unpatterned. The pick-up device 5 further includes a pick-up mechanism 9 which picks up the individually divided elements 22 by cutting the tape. The pickup mechanism $ is composed of a rotating arm 9 disposed on the base 51 and a pick-up head 92 attached to the front end of the rotating arm 91. The rotating arm 91 is rotated by a driving mechanism of the drawing type. Further, the rotating arm 91 is configured to be movable up and down, and the picking chuck 92' attached to the front end picks up the individually divided elements 22 attached to the Cena tape 4G. Referring again to Fig. 5, the pickup device 5 includes a cooling mechanism 配 disposed in the expansion cylinder % for constituting the tape expansion mechanism 7. The cooling mechanism 1 is disposed such that the cooling fluid ejecting head 1G1 is disposed upward and communicates with a cooling fluid supply mechanism (not shown). The pickup device 5 is configured as described above, and the order of attaching the respective elements 22 attached to the surface of the dicing tape by the dicing tape 4 by the dicing tape 4 is mainly referred to as the sixth. The figure and Fig. 7 are explained. 15 200952091 As shown in the second drawing, the annular frame 4 on which the respective elements 22 of the adhesive film 3 are attached via the dicing tape 40 is mounted as shown in Fig. 6(a). The frame holding member 6 of the frame holding mechanism 6 is "on the mounting surface 611" and is fixed to the frame holding member by the clamp 62 as a frame 5 holding program. At this time, the frame holding member 61 is tied at the sixth (a) The reference position shown in the figure. As shown in Fig. 6(a), the annular frame 4 on which the respective elements 22 of the adhesive film 3 are attached via the dicing tape 4 支撑 is fixed at the reference position. When the frame holding member 61 is attached, the plurality of pneumatic cylinders serving as the support members 73 for constituting the expansion mechanism 7 of the tape 10 can be operated, and the annular frame holding member 61 is raised to the sixth figure (b). Separation position (separation position locating program). Next, the plurality of pneumatic cylinders 730 as the supporting members 73 constituting the tape expanding mechanism 7 are operated to lower the annular frame holding member 61 to the sixth lower portion (c) ) the expanded position shown in the figure. The annular frame 4 on the mounting surface 611 of the member 61 is also lowered. Therefore, the cutting tape 40 attached to the annular frame 4 as shown in Fig. 6(c) is in contact with the upper end edge of the expanding cylinder 70. The tape is expanded and expanded (the tape expansion process is at this time, the annular frame holding member 61, that is, the dicing tape 40 attached to the annular frame 4, is lowered by the separation position shown in Fig. 6(b) Therefore, when abutting against the upper edge of the expansion cylinder 70, the predetermined moving speed is reached. Further, it is important that the predetermined moving speed when the dicing tape 40 abuts against the upper edge of the expansion cylinder 70 is 100 mm/sec or more. As a result, for the adhesive film 3 attached to the back surface of each of the elements 22 attached to the dicing tape 40, the expansion force is radially activated at 200952091 5 ❹ 10 speed, and the individually divided component 22 and the adhesive film 3 The interval between them is rapidly increased. It is important to increase the interval ' between the individually divided elements 22 and the adhesive film 3 which is enlarged as described above, and is more than 1 〇〇V m. Therefore, along the boundary 21 And cutting the semi-guide with a cutter piece with a width of 20//m In the case of the wafer 2, in the tape expansion process, the interval between the element 22 and the adhesive film 3 can be increased to 120/zm or more. When the tape expansion process is performed, as shown in Fig. 6(a) When the position is at the reference position, the cooling mechanism 10 is preferably operated and the cooling fluid is ejected by the cooling fluid ejecting head 101 to cool the bonding film 3 to below 10 ° C. 15 ❹ If the tape expansion procedure has been implemented as described above, The second moving mechanism 54 and the second moving mechanism 55 are operated to move the first table 52 in the direction indicated by the arrow Y (see FIG. 3), and the second table 53 is oriented in the direction indicated by the arrow X ( Referring to Fig. 3), the respective members 22 attached to the dicing tape 4 保持 held by the annular frame 4 held by the frame holding member 61 are positioned directly below the detecting mechanism 8. Further, the detecting means 8 is operated to check whether or not the gap between the respective elements 22 coincides with the direction indicated by the arrow γ or the direction indicated by the arrow. The gap between the right elements 22 is offset from the direction indicated by the arrow γ or the direction indicated by the arrow, allowing the rotation mechanism 75 to act and the frame retaining mechanism 6 to be uniform. Next, the first table 52 is moved in the direction 20 (see FIG. 3) indicated by the arrow ', and the table 53 is moved in the direction indicated by the arrow ( (see FIG. 3), and as shown in FIG. As shown, the picking mechanism 9 is actuated to take the component 22 (pickup program) in the position of the dagger and pick it up and transport it to a tray or die-casting program (not shown). In the above-described pick-up procedure, the cymbal member 22 is attached to the back surface with the adhesive film 3 17 200952091, and is peeled off by the dicing tape 40 and picked up. At this time, the thin layer 3 is adhered, and the outer peripheral portion is entangled with the adhesive tape of the adhesive tape 40, and the whisker-like dust is generated when the component 22 is picked up by the dicing tape 40. However, in the tape expansion process described above, When the space between the separately divided component 22 and the adhesive film 3 is increased by 5, the moving speed is 100 mm/sec or more, and the interval between the component 22 and the adhesive film 3 is increased to 100; As described above, the whisker-like dust does not remain on the side of the dicing tape 40, and does not adhere to the viscous film 3. According to the experiment of the inventor of the present invention, it is known that the moving speed is slower than 100 mm/sec, and the whisker-like dust adheres to the adhesive film 3, and the more the case, the more the component 22 and the adhesive film 3 are used. The smaller the interval is less than 100/im, the higher the proportion of the whisker-like dust adhering to the adhesive film 3. Further, it is understood that in the tape expansion process, when the adhesive film 3 is cooled to 10 ° C or lower, the ratio of the whisker-like dust adhering to the adhesive film 3 at the time of picking up is further reduced. 15 [Picture of Jane's Pregnancy and Softness] The first figure shows a perspective view of a state in which a bonded thin ray substrate is bonded to a dicing tape attached to a ring frame. Fig. 2 is a perspective view showing a state in which the semiconductor wafer and the bonding film shown in Fig. i are cut into individual elements. Fig. 3 is a perspective view of a pick-up device for carrying out the pick-up method of the component in which the adhesive film is mounted in the present invention. Fig. 4 is a perspective view showing the important part of the pickup device shown in Fig. 3 disassembled. 18 200952091 Fig. 5 is a cross-sectional view showing a second stage, a frame holding mechanism, and a tape expanding mechanism for constituting the pick-up device shown in Fig. 3. Fig. 6(a) to Fig. 6(c) are explanatory views showing the tape expanding procedure in the picking method of the component in which the adhesive film is mounted in the present invention. 5 Fig. 7 is an explanatory view showing a pickup procedure in the pickup method of the component in which the adhesive film is mounted in the present invention.
【主要元件符號說明】 2...半導體晶圓 53…第2工作台 2a...表面 54...第1移動機構 3...黏結薄膜 55…第2移動機構 4...環狀框架 61...框架保持構件 5…拾取裝置 62. _.央姆 6...框架保持機構 70…擴張圓筒 7…膠帶擴張機構 71...安裝部 8…檢測機構 72...支樓凸緣 9…拾冓 73…支撑構件 10…冷卻機構 75…旋動機構 21…界道 81…支雜 22…·元件 91…旋轉臂 40…切割膠帶 92…拾取夾頭 51...基台 101…冷卻流體噴射頭 52...第1工作台 511，512···導轨 19 200952091 511a...導溝 521…開口 522.. .被導引軌 523,524…導軌 523a...導溝 531.. .凹洞 532.. .被導引軌 541…公螺紋桿 542.. .轴承 543.. .脈衝電動機 544…母螺紋塊 551…公螺紋桿 552…轴承 553.. .脈衝電動機 554…母螺紋塊 611.. .載置面 730…氣壓缸 731…活鉼 751.. .脈衝電動機 752…滑輪 753.. .環形皮帶 20[Description of main component symbols] 2: semiconductor wafer 53... second stage 2a... surface 54... first moving mechanism 3... bonding film 55... second moving mechanism 4... ring Frame 61...frame holding member 5...pickup device 62. _.yangm 6...frame holding mechanism 70...expansion cylinder 7...tape expansion mechanism 71...mounting portion 8...detection mechanism 72... Floor flange 9...pick up 73...support member 10...cooling mechanism 75...spinning mechanism 21...boundary track 81...dots 22...·element 91...rotating arm 40...cutting tape 92...picking chuck 51...base Stage 101...Cooling fluid jet head 52...First stage 511,512··· Guide rail 19 200952091 511a... Guide groove 521... Opening 522.. Guided rail 523, 524... Guide rail 523a... Ditch 531.. recess 532.. guided rail 541... male threaded rod 542.. bearing 543.. pulse motor 544... female thread block 551... male threaded rod 552... bearing 553.. pulse motor 554... female thread block 611.. mounting surface 730... pneumatic cylinder 731... active 751.. pulse motor 752... pulley 753.. ring belt 20