TW200949185A - Thermal interconnect and integrated interface systems, methods of production and uses thereof - Google Patents

Thermal interconnect and integrated interface systems, methods of production and uses thereof Download PDF

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TW200949185A
TW200949185A TW098108094A TW98108094A TW200949185A TW 200949185 A TW200949185 A TW 200949185A TW 098108094 A TW098108094 A TW 098108094A TW 98108094 A TW98108094 A TW 98108094A TW 200949185 A TW200949185 A TW 200949185A
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Taiwan
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heat sink
layer
sink assembly
coupling
thermally conductive
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TW098108094A
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Chinese (zh)
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Patrick Underwood
Arthur Falk
Paul Silinger
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Honeywell Int Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3737—Organic materials with or without a thermoconductive filler
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H01L23/427—Cooling by change of state, e.g. use of heat pipes
    • H01L23/4275—Cooling by change of state, e.g. use of heat pipes by melting or evaporation of solids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3731—Ceramic materials or glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3732—Diamonds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3736—Metallic materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/4935—Heat exchanger or boiler making

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Cooling Or The Like Of Electrical Apparatus (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Laminated Bodies (AREA)

Abstract

Heat spreader assemblies are disclosed that include a heat spreader component, at least one coupling layer, and at least one thermally conductive layer, wherein the heat spreader component is coupled to the at least one thermally conductive layer through the at least one coupling layer. In some instances, heat spreader assemblies include an aluminum-based heat spreader component, at least one coupling layer, wherein the coupling layer comprises zinc, a zinc-based material, tin, a tin-based material or a combination thereof, and at least one thermally conductive layer comprising nickel, wherein the heat spreader component is coupled to the at least one thermally conductive layer through the at least one coupling layer. Methods of forming heat spreader assemblies are also disclosed that include providing a heat spreader component, wherein the heat spreader component comprises a top surface, a bottom surface and at least one heat spreader material; providing at least one coupling material, wherein the coupling material is directly deposited onto the bottom surface of the heat spreader component; and depositing applying or coating at least one thermally conductive coating, film or layer on at least part of the bottom surface of the heat spreader component. In several embodiments, heat spreader component comprises a native oxide layer, an oxide barrier layer or a combination thereof that is removed before application of the at least one coupling material.

Description

200949185 六、發明說明： 根據專利合作條約（PCT)申請之本申請案主張2008年3月 13曰申請之美國臨時申請案第61/036397號的優先權，該 案為共同擁有的且以引用之方式全文併入本文中。 【先前技術】 愈來愈多之電子組件已用於消費型及商業電子產品中。 此等消費型及商業產品中之一些之實例為電視、個人電 腦、網際網路伺服器、行動電話、呼叫器、掌上型行事 曆、搞帶型無線電、汽車音響或遙控器。隨著對此等消費 型及商業電子產品之需求增加，亦需要彼等相同產品對於 消費者及商務而言變得更小、具有更多功能且更易攜帶。 由於此等產品之尺寸縮小，包含該等產品之組件亦必須 變得更小。需要減小尺寸或按比例縮小之彼等組件中之一 些的實例為印刷電路板或印刷線路板、電阻器、配線、鍵 盤、觸控板及晶片封裝。產品及組件亦需要經預封裝，以 使得產品及/或組件可執行若干相關或非相關功能及任 務。此等”全解（total solution)”組件及產品中之一些的實例 包含層化材料、母板、行動電話及無線電話及電信器件以 及其他組件及產品，諸如見於以下各案中者：2002年7月 15曰申凊之美國專利及pct申請案第60/396294號、2〇〇1年 5月30曰申請之60/294433，及2002年5月30曰申請之 PCT/US02/17331，其皆為共同擁有的且全文併入本文中。 因此’分解並研究組件以判定是否存在將允許其按比例 縮小及/或組合以適應對較小電子組件之需求的較佳構建 139065.doc 200949185 材料及方法。在層化組件中，一目標呈現為❹層之數目 而同時增加剩餘層之功能性及耐久性。然而，假設一般應 存在-些層及層組件以便操作器件，則此任務可為困難 的。 封裝領域處於A量競爭壓力下。首先，成本壓力迫使行 業搜尋較低成本之原料。其次，隨著電子器件變得較小且 . α較高速度操作，以熱形式發出之能量顯著增加。熱耗散 參《技術要求亦增加。隨著雙核及四核處理器之出現，1(：製 造商已減少對較高熱導率材料的需要，但尚未發現具有低 ^本及中間熱性質之材料。過去，已使用陽極氧化鋁，但 氧化障壁層之熱阻使銘之塊體熱性質降級至無法將其用於 現今之封裝中的程度。 :因此，繼續需要：a)設計並製造滿足消費者規格，同時 最小化器件之尺寸及層之數目的熱互連及積體介面材料、 層化材料、組件及產品；b)關於對材料、組件或完成產品 φ 的相容性需求，製造更有效且經更佳設計之材料、產品及 /或組件；C)開發製造所要之熱互連材料、積體介面材料及 層化材料及包含預期積體介面及層化材料之組件/產品的可 靠方法；d)開發具有高熱導率及高機械順從性之材料；及 • e)有效地減少封裝總成所必需之製造步驟之數目，此又導 致相較於其他習知層化材料及製程具有較低持有成本。 【發明内容】 揭示散熱器總成，其包括散熱器組件、至少—輕接層及 至少一導熱層’其中該散熱器組件經由該至少一耗接層輕 139065.doc 200949185 接至該至少一導熱層。 在—清形中’放熱器總成包括：基於鋁之散熱器組 件’·至少1接層，其中該㈣層包含辞、基於辞之材 料、錫、基於錫之材料或其組合，·及至少一導熱層，其包 含錄’其中該散熱器組件經由該至少一輕接層輕接至該至 少一導熱層。 亦揭示形成散熱器總成之方法，其包括：提供散熱器組 件，其中該散熱器組件包含上表面、下表面及至少一散執 器材料；提供至少一福接材料，其中該麵接材料直接沈積 至該散熱器組件之下表面上；及在該散熱器組件之下表面 的至少部分上沈積、塗覆或塗佈至少一導熱塗層、膜或 層。在若干實施例中，散熱器組件包含在塗覆至少一耗接 材料之前移除的原生氧化層、氧化障壁層或其組合。 【實施方式】 合適介面材料或組份應符合配合表面（"濕满，，表面），具 有低塊體熱阻且具有低接觸> & 1 、 并百低接觸抗性。塊體熱阻可表示為材料 或、.且伤之厚度、熱導率及面積之函數。接觸抗性為對材料 或組份能夠與配合表面、層或基板接觸之程度的量測。介 面材料或組份之熱阻可展示如下： 方程式1 0interface=t/kA + 20contact 其中Θ為熱阻， t為材料厚度， k為材料之熱導率， 139065.doc -6 - 200949185 A為介面之面積β 術語"t/kA"表示塊體材料之熱阻且表示兩個表 面處之熱接觸抗性。合適介面材料或組份應具有低塊體熱 阻及低接觸抗性（亦即，在配合表面處）。 許夕電子及半導體應用要求介面材料或組份適應由製造 引起之表面平坦度之偏差及/或由於熱膨脹係數（CTE)失配 •而產生之組件翹曲。 ❿ 若介面較薄（亦即，” t”值低），則具有低1^值之材料（諸 如，熱脂）表現良好。若介面厚度僅增加0.002吋，則熱效 能可顯著降低。又，對於此等應用，配合組份之間的咖 差異使間隙隨每一溫度或功率循環而擴張及收縮。此介面 厚度變化可導致流體介面材料（諸如，油脂）自介面喷離。 具有較大面積之介面更易於在製造時發生表面平坦度之 偏差為了最佳化熱效能，介面材料應能夠符合不平坦之 表面且藉此降低接觸抗性。如本文所使用，術語"介面"意 •=在物：或空間之兩部分之間(諸如，在兩個分子、兩個 月幹、骨幹與網路、兩個網路等等之間）形成共同邊界的 • A接或鍵結。介面可包含物質或組份之兩部分的實體附接 或物質或、、且伤之兩部分之間的物理吸引，包括諸如共價及 ^子鍵結之鍵結力及諸如凡得瓦爾力、擴散結合、靜電結 庫，結合、氫結合及/或磁吸引之非鍵結力。預期介 藉由諸如共價鍵結之鍵結力形成的介面；然而，應 解亦涵蓋物質或組份之兩部分之間的任何合適黏附吸引 或附接。 I39065.doc 200949185 最佳介面材料及/或組份具有高熱導率及高機械順從 性。间熱導率減少方程式i之第一項，而高機械順從性減 少第二項。本文中所述之層化介面材料及層化介面材料之 個別組份達成此等目標。當適當地製造時，本文中所述之 熱介面組件將橫越散熱器材料與矽晶粒組件之配合表面之 間的距離，藉此允許自一表面至另一表面之連續高傳導性 路徑。 為解決先前技術部分中之目標而同時解決利用形成氧化 層或氧化障壁層的散熱器之固有困難，已發現，可經由使 用至少層㈣除所形成之氧化層^較高熱導率塗 層來替換該(等)氧化層。在特定實施例中，可移除形成於 紹散熱器上之氧化㈣且透過使用至少―耗接層來用較高 熱導率塗層替換該等氧化銘層。如[先前技術]部分中所提 及，在利用料為散熱器材料時使此難變得特別困難之 實情為紹幾乎立即形成氧化層，此氧化層為不導敎且不導 電的。必須移除此層，以在表面域上對表面具有足_ 附力之金屬且獲得有用之層化材料。 - 本文中所述之層化介面材料及層化介面材 達成此等目標。當適每妯匍他拄 士 — + J，，且物 ㈣r —八 文中所述之散熱器組 件將㈣熱介面材料與散熱器組件之配合表面之間的距 離，藉此允許自—表* ^ 表面至另一表面之連續高傳導性路徑。 在預期實施例中，可製诰 μ…也 了製以種散熱器總成，其包含：a) 散…器、且件’ b)至少—耗接層，及c)至少 該散熱器組件經由1 …層，其中 千，二由該至少一耦接層耦接至該至少一導熱 139065.doc 200949185 層。在· 一- 0¾. 1¾. 件；至少ΐ麵’散熱器總成包括：基於銘之散熱器組 ，其中該耦接層包含鋅、基於鋅 =錫、基於錫之材料或其組合;及至少一導熱層鋅= :、：導=錢熱器組件經由該至少-麵接層輕接至該至200949185 VI. INSTRUCTIONS: This application, filed under the Patent Cooperation Treaty (PCT), claims priority to U.S. Provisional Application No. 61/036,397, filed on March 13, 2008, which is commonly owned and incorporated by reference. The manner is fully incorporated herein. [Prior Art] More and more electronic components have been used in consumer and commercial electronic products. Examples of such consumer and commercial products are televisions, personal computers, internet servers, mobile phones, pagers, handheld calendars, band-type radios, car stereos or remote controls. As the demand for these consumer and commercial electronic products increases, they also need to have smaller, more functional and more portable products for their customers and businesses. As the size of these products shrinks, the components containing these products must also become smaller. Examples of some of the components that need to be downsized or scaled down are printed circuit boards or printed circuit boards, resistors, wiring, keypads, trackpads, and wafer packages. Products and components also need to be pre-packaged to enable the product and/or component to perform a number of related or non-related functions and tasks. Examples of such "total solution" components and products include stratified materials, motherboards, mobile phones and radiotelephones and telecommunications devices, and other components and products, such as those found in the following cases: 2002 U.S. Patent and PCT Application No. 60/396,294, filed on July 15th, PCT/US02/17331, filed on May 30, 2002, and PCT/US02/17331, filed May 30, 2002 Both are co-owned and are incorporated herein in their entirety. Thus, the components are decomposed and studied to determine if there are better constructs that would allow them to be scaled down and/or combined to accommodate the needs of smaller electronic components. 139065.doc 200949185 Materials and methods. In a stratified assembly, a target is presented as the number of enamel layers while increasing the functionality and durability of the remaining layers. However, this task can be difficult given that there should generally be some layer and layer components in order to operate the device. The packaging field is under the pressure of A quantity competition. First, cost pressures force the industry to search for lower-cost raw materials. Second, as the electronics become smaller and operate at higher speeds, the energy emitted in the form of heat increases significantly. The heat dissipation has also increased the technical requirements. With the advent of dual-core and quad-core processors, 1 (: Manufacturers have reduced the need for higher thermal conductivity materials, but have not found materials with low and intermediate thermal properties. In the past, anodized aluminum has been used, but The thermal resistance of the oxidized barrier layer degrades the thermal properties of the block to the extent that it cannot be used in today's packages. Therefore, there is a continuing need to: a) design and manufacture to meet consumer specifications while minimizing device size and Number of layers of thermal interconnects and integrated interface materials, stratified materials, components and products; b) more efficient and better designed materials and products for compatibility requirements for materials, components or finished products φ And/or components; C) develop and manufacture the desired thermal interconnect materials, integrated interface materials and stratified materials and reliable methods for components/products containing the desired integrated interface and stratified materials; d) develop high thermal conductivity and High mechanical compliance materials; and • e) Effectively reducing the number of manufacturing steps necessary for the package assembly, which in turn results in lower cost of ownership compared to other conventional layered materials and processes. SUMMARY OF THE INVENTION A heat sink assembly is disclosed that includes a heat sink assembly, at least a light-bonding layer, and at least one heat-conducting layer, wherein the heat sink assembly is coupled to the at least one heat-conducting via the at least one power-consuming layer 139065.doc 200949185 Floor. In the clearing process, the 'heat radiator assembly includes: an aluminum-based heat sink assembly' · at least one layer, wherein the (four) layer contains a word, a material based on the word, tin, a tin-based material or a combination thereof, and at least a thermally conductive layer comprising: wherein the heat sink assembly is lightly coupled to the at least one thermally conductive layer via the at least one light bonding layer. Also disclosed is a method of forming a heat sink assembly, comprising: providing a heat sink assembly, wherein the heat sink assembly includes an upper surface, a lower surface, and at least one bulker material; providing at least one bucking material, wherein the facing material is directly Depositing onto a lower surface of the heat sink assembly; and depositing, coating or coating at least a thermally conductive coating, film or layer on at least a portion of a lower surface of the heat sink assembly. In several embodiments, the heat sink assembly comprises a native oxide layer, an oxidative barrier layer, or a combination thereof that is removed prior to application of at least one of the consuming material. [Embodiment] The suitable interface material or component should conform to the mating surface ("wet, surface), have low bulk thermal resistance and have low contact >& 1 and low contact resistance. The block thermal resistance can be expressed as a function of the material or, and the thickness, thermal conductivity and area of the wound. Contact resistance is a measure of the extent to which a material or component can contact a mating surface, layer or substrate. The thermal resistance of the interface material or component can be shown as follows: Equation 1 0interface=t/kA + 20contact where Θ is the thermal resistance, t is the material thickness, k is the thermal conductivity of the material, 139065.doc -6 - 200949185 A is the interface The area β term "t/kA" denotes the thermal resistance of the bulk material and represents thermal contact resistance at both surfaces. Suitable interface materials or components should have low bulk heat resistance and low contact resistance (i.e., at the mating surface). Xu Xi Electronics and semiconductor applications require interface materials or components to accommodate component surface warpage deviations due to manufacturing and/or component warpage due to thermal expansion coefficient (CTE) mismatch. ❿ If the interface is thin (ie, the “t” value is low), materials with low 1^ values (such as thermal grease) perform well. If the interface thickness is only increased by 0.002 吋, the thermal efficiency can be significantly reduced. Again, for such applications, the gap between the components is such that the gap expands and contracts with each temperature or power cycle. This change in interface thickness can cause fluid interface materials, such as grease, to be ejected from the interface. Interfaces with larger areas are more susceptible to surface flatness deviation during fabrication. To optimize thermal performance, the interface material should be able to conform to uneven surfaces and thereby reduce contact resistance. As used herein, the term "interface" means = between object: or between two parts of space (such as between two molecules, two months, backbone and network, two networks, etc.) ) A joint or bond that forms a common boundary. The interface may comprise a physical attachment or a substance or a physical attraction between the two parts of the substance or component, including bonding forces such as covalent and ^ bond bonding, and such as Van der Waals force, Non-bonding forces of diffusion bonding, electrostatic junctions, bonding, hydrogen bonding, and/or magnetic attraction. It is contemplated that the interface is formed by a bonding force such as a covalent bond; however, the solution also covers any suitable adhesion attraction or attachment between the two portions of the substance or component. I39065.doc 200949185 The best interface materials and / or components have high thermal conductivity and high mechanical compliance. The inter-thermal conductivity reduces the first term of equation i, while the high mechanical compliance reduces the second term. The individual components of the layered interface material and the layered interface material described herein achieve these objectives. When properly fabricated, the thermal interface components described herein will traverse the distance between the heat sink material and the mating surface of the germanium die assembly, thereby permitting a continuous high conductivity path from one surface to the other. In order to solve the inherent difficulties in the use of a heat sink forming an oxide layer or an oxidized barrier layer in order to solve the object in the prior art, it has been found that it can be replaced by using at least a layer (four) in addition to the formed oxide layer and a higher thermal conductivity coating. The (equal) oxide layer. In a particular embodiment, the oxidation (4) formed on the heat sink can be removed and the oxidized layer can be replaced with a higher thermal conductivity coating by using at least a "consumable layer." As mentioned in the [Prior Art] section, it is particularly difficult to make this difficulty particularly difficult when the material is a heat sink material. This oxide layer is formed almost immediately and is non-conductive and non-conductive. This layer must be removed to have a metal attached to the surface on the surface domain and to obtain a useful layered material. - The stratified interface materials and stratified interface materials described in this paper achieve these goals. When appropriate, the heat sink assembly described in the article (4) and the heat sink assembly described in the article (4) is the distance between the surface of the heat interface material and the surface of the heat sink assembly, thereby allowing self-table* A continuous high conductivity path from the surface to the other surface. In the contemplated embodiment, a heat sink assembly is also provided, comprising: a) a diffuser, and a member 'b) at least a consumable layer, and c) at least the heat sink assembly via 1 ... layer, wherein thousands, two are coupled to the at least one heat conducting layer 139065.doc 200949185 by the at least one coupling layer. In the first - 03⁄4. 13⁄4. piece; at least the kneading 'heat sink assembly includes: a heat sink based on the name, wherein the coupling layer comprises zinc, zinc-based tin, tin-based material or a combination thereof; and at least a heat conducting layer zinc =:,: conduction = money heater assembly is lightly connected to the through the at least - face layer

總成可包含任何合適之散熱器材料或組份， 其係該等會形成氧化障壁層或原生氧化層之材料。在— 些實施例中，預期散熱器材料包含㈣基於銘之材料。散 熱器組件包含上表面、下表面及至少一散熱器材料。 散熱器組件或散I组件（散熱器與散熱在本文中可互換 地使用且具有相同的共同含義）—般包含金屬、基於金屬 之基底材料、高傳導性非金屬或其組合，諸如鎳、鋁、 銅、銅镇、⑽C、鐵石、碳化石夕、石•墨、諸如銅複合 物、碳複合物及鑽石複合物或Alsic之複合材料及/或可能 不包含金屬之其他合適的高傳導性材料。任何合適之金屬 或基於金屬之基底材料均可在本文中用作散熱器，只要金 屬或基於金屬之基底材料可耗散電子組件所產生之一些或 全部的熱。 如本文所使用，術語"金屬"意謂在元素週期表之d區及f 區中之彼等元素’連同具有類金屬性質之彼等元素（諸 如，矽及鍺）。如本文所使用，短語"d區"意謂具有填充圍 繞元素核之3d、4d、5d及6d執道之電子的彼等元素。如本 文所使用’短語"f區”意謂具有填充圍繞元素核之4f及5f軌 道之電子的彼等元素，包括鑭系元素及婀系元素。較佳金 *139065.doc 200949185 屬包括銦、銀、銅、鋁、錫、絲、鉛、鎵及其合金、塗有 銀之銅，及塗有銀之鋁。術語"金屬"亦包括合金、金屬/金 屬複合物、金屬陶瓷複合物、金屬聚合物複合物以及其他 金屬複合物。如本文所使用，術語"化合物”意謂可藉由化 學過程分解為元素之具有恆定組成的物質。如本文所使 用，措辭’’基於金屬”係指包含至少一金屬之任何塗層、 膜、組合物或化合物。 視電子組件、供應商之需要而定且只要散熱器組件能夠 充分執行耗散產生自周圍電子組件之一些或全部之熱的任 務，可以任何合適厚度來舖設或形成散熱器組件。預期厚 度包含在約0.25 mm至約6 mm之範圍中的厚度。在一些實 施例中’散熱器組件之預期厚度係在約〇.5 mm至約5 mm 之範圍内。在其他實施例中，散熱器組件之預期厚度係在 約1 mm至約4 mm之範圍内。 當使用如焊料之金屬熱介面材料（與大多數聚合物系海 相比’其具有高彈性模數)時’可能有必要減少熱編 數失配而產生之向半導體晶粒傳遞之機械應力以防止晶米 破裂。可藉由增加金屬熱介面材料之結合層、減少散熱器 之熱膨脹係數，或改變散熱器之幾何形狀以最小化應^ 遞來最小化此應力傳遞。較低熱膨㈣數（cte)材料之實 例為退C、CuSiC、銅石墨複合物、碳·碳複合物、鑽 石、CUM〇CU層麼片等等。幾何形狀改變之實例為將部分 或貫通之狹槽添加至散熱以減少散熱器厚度，及形成 截頂的、正方形基底、倒轉之棱錐形狀以藉由具有較低的 139065.doc -10- 200949185 接近半導體晶粒之散熱器橫截面來降低應力及硬度β 在預期散熱器總成中，在將至少一耦接層塗覆至散熱器 上之後，在散熱器上鋪設至少一導熱層。該至少一耦接層 係在移除任何氧化障壁層或原生氡化層之後經塗覆。此等 耦接層經設計以增加散熱器與至少一導熱層之間的介面結 合強度，而同時最小化或消除散熱器上之任何額外氧化層 -形成。在一些實施例中，至少一耦接層包含辞、基於鋅之 參 材料及/或合金、錫、基於錫之材料及/或合金，或其組 合。在預期實施例中，可藉由任何合適方法（包括直接電 鍍、高速電鍍或另一方法）來塗覆至少一耦接層。亦可以 任何合適固體層或圖案且亦可以任何合適厚度來鋪設至少 一麵接層。 如所提及，至少一散熱器組件可與基於金屬之塗層、層 及/或膜耦接。如本文所使用，術語"耦接"意謂表面與塗 層、層及/或膜彼此實體附接，或在物質或組份之兩部分 φ 之間存在物理吸引，包括諸如共價及離子鍵結之鍵結力， 及諸如凡得瓦爾力、擴散結合、靜電結合、庫侖結合、氫 結合及/或磁吸引之非鍵結力。又，如本文所使用，術語 耦接欲包含散熱器組件與至少一導熱層、塗層及/或膜彼 此直接附接之情況，但該術語亦欲包含散熱器組件與至少 一導熱層、塗層及/或膜彼此間接耦接之情況_諸如在散熱 器組件與至少一導熱層、塗層及/或膜之間存在助黏劑層 或在散熱ι§組件與至少一導熱層、塗層及/或膜之間總存 在另一層之情況。 139065.doc • 11 · 200949185 在塗覆至少一耦接層之後，可塗覆至少一導熱層❶可藉 由使用至少一耦接材料或層在散熱器組件之至少一表二 至少部分上直接沈積至少一導熱層，該至少一耦接材料或 層係在塗覆至> —導熱層或塗層之前鋪設至散熱器組件 上。另外’可藉由任何合適方法或器件來塗覆此或此等 層。至少一導熱層可包含錄、金、銦、把、銀、錫、叙、 釕或其組合。 將至乂導熱塗層、層及/或膜沈積或塗覆至散熱器組 件之至少一表面上。亦可將至少一導熱塗層、層及，或膜 塗佈至散熱器組件之至少—表面上。使用術語塗佈、塗覆 及/尤積以展不至少一導熱塗層、膜及/或層可以液體或熔 體形式經塗佈，可以條帶、層或膜形式經塗覆，或可藉由 氣相沈積、鑛或電鑛及任何其他合適沈積方法經沈積。 通常藉由任何能夠產生具有最少孔隙或空隙之均一層的 方法來鋪設此等至少一導熱塗層，且可以相對較高之沈積 速率來進一步鋪設該層。許多合適方法及裝置可用於鋪設 此類型之層或超薄層。一種預期方法為點電鍍、脈衝電 鍍、反向脈衝電鍍或其組合，其係描述於us 737873〇、美 國申請案第11/961067號及PCT申請案第PCT/US04/04272號 中’各案為共同擁有的且以引用之方式全文併入本文中。 脈衝電鍍（其為與直流電鍍相反之間歇電鍍）可鋪設無或實 際上無孔隙及/或空隙之層。 鋪設薄層或超薄層之另一方法為脈衝週期反向方法或 "PPR"。脈衝週期反向方法由於實際上”反向”或消耗陰極 139065.doc 12 200949185 表面處之膜而優於脈衝電鍍方法。脈衝週期反向之典型循 環可為··在5安培陰極部分下，1〇 ms;接著在1〇安培陽極 邛为下，0.5 ms，接著，2 ms斷開時間。ppR具有若干優 勢。百先，藉由在每一循環期間"剝去"或去除少量膜， PPR迫使每-連續循環產生新成核位點，從而導致孔隙率 之進步減^、。其次，可使循環適於藉由在循環之"去鍍·, — 或陽極部分期間選擇性地制去厚膜區域來提供極均一之 ❿ 、PR並不適用於—些金屬沈積，諸如金沈積，因為锻 般係在無游離氰化物之系統中進行。因此，將在電錢 1環期間自氰化物複合物(螯合劑)鍍金，但無法在去鍍循 衣期間剝去I，因為不存在使金再溶解之氰化物。 用於本文所述之標的物中之至少一導電塗層、層及/或 膜應能夠以薄或超薄連墙届 涛運續層或圖案來鋪設。可藉由使用遮 來產生圖案，或可藉由能夠鋪設所要圖案之器件來產生 圖案。預期圖案包括單獨或組合形成線條、填充空 ❹：點或圓點的任何排列。因此’預期圖案包括直線及曲 :铬交叉線、具有加寬或變窄區域之線條、帶狀條、重疊 線條。預期薄層及超薄塗層 叠 _或甚至向下至材料之2=㈣1 μη1向下至約-埃 言之，一此㈣·^ #子層大小的範圍内變化。特定 二預d薄層小於約】厚。 期薄層小於約500⑽厚。彳此奢&其他實施例中’預 於約⑽⑽厚。在其他實ΓΓ’預期超薄層小 nm厚。 、他實施财，預期超薄層小於約10 -特疋實施例中，可借助於至少一耦接材料(諸 139065.doc 13 200949185 如，鋅）將鎳電鍍於鋁散熱器、加強件及/或積體散熱器 上’以滿足中階CPU之熱需要。 在其他實施例中’熱傳遞材料亦可包含保護層或保護塗 層°在預期實施例中’保護層經設計以將光滑表面轉印至 至夕一導熱層或塗層上。預期保護層包含硬塑膠，諸如 PVC或聚乙烯。 在一些實施例中，已設想一種電鍍方法且在本文中揭示 其有助於製造預期散熱器總成及層化材料。預期電鑛方法 可配合習知設備’該習知設備接著經設定以將至少一導熱 層高速電鍍於散熱器材料或組份上（諸如，將錄高速電锻 於鋁上）。在一些實施例中，此方法將提供可在電鍍後另 外經處理之鍍鎳表面《舉例而言，該電鍍表面可為經標記 及/或處理之LASER ’其極其類似銅表面上之習知鑛錄表 面。 在一實施例中’可將一片鋁形成為用於散熱器之任何標 準或非標準形狀《使用肥皂或清潔浴來移除鋁表面上之任 何成型油或衝壓油。蝕刻方法接著移除鋁基板之原生氧化 層’且接著將鋅、錫、銅或其組合及合金之薄層沈積至該 基板上。在鋅、錫、銅或其組合及合金之層處於適當位置 中之後’可將至少一導熱塗層（諸如，鎳、金、銦、鈀、 銀、錫、鉍、釕或其組合或合金）電鍍及/或塗覆至該表面 上。 在預期實施例中，在塗覆至少一耦接層及至少一導熱層 之後’可將熱介面材料直接沈積至散熱器組件之至少一側 I39065.doc •14· 200949185 面上’諸如底面、頂面或其兩者。在一些預期實施例中， 焊接材料可經絲網印刷或藉由諸如喷射、熱噴塗、液體模 製或粉末噴塗之方法而直接施配至散熱器上。在其他預期 實施财，沈積熱介面材料之膜且與建置適當熱介面材料 厚度之其他方法（包括預成型坯之直接附接，或熱介面材 料漿料之絲網印刷）組合。 ❿The assembly may comprise any suitable heat sink material or component that is the material that will form the oxidized barrier layer or the native oxide layer. In some embodiments, it is contemplated that the heat sink material comprises (iv) a material based on the name. The heat sink assembly includes an upper surface, a lower surface, and at least one heat sink material. A heat sink assembly or a dispersive I component (heat sink and heat sink are used interchangeably herein and have the same common meaning) generally comprise a metal, a metal based substrate material, a highly conductive non-metal or a combination thereof, such as nickel, aluminum. , copper, copper, (10)C, iron, carbon stone, stone, ink, composites such as copper composites, carbon composites and diamond composites or Alsic and/or other suitable highly conductive materials that may not contain metals . Any suitable metal or metal based substrate material can be used herein as a heat sink as long as the metal or metal based substrate material dissipates some or all of the heat generated by the electronic components. As used herein, the term "metal" means the elements in the d and f regions of the periodic table as well as the elements having the metalloid nature (e.g., 矽 and 锗). As used herein, the phrase "d"" means having elements that fill the electrons that surround the 3d, 4d, 5d, and 6d of the elemental core. As used herein, the phrase "f-zone" means having elements that fill the electrons surrounding the 4f and 5f orbitals of the elemental nucleus, including lanthanides and actinides. Preferred gold*139065.doc 200949185 Indium, silver, copper, aluminum, tin, silk, lead, gallium and alloys thereof, silver coated copper, and silver coated aluminum. The term "metal" also includes alloys, metal/metal composites, cermets Composites, metal polymer composites, and other metal composites. As used herein, the term "compound" means a substance that has a constant composition that can be broken down into elements by chemical processes. As used herein, the phrase 'metal-based' refers to any coating, film, composition or compound comprising at least one metal, depending on the needs of the electronic component, the supplier, and as long as the heat sink assembly is capable of performing the dissipation sufficiently The heat sink assembly can be laid or formed from any suitable thickness from any or all of the thermal tasks of the surrounding electronic components. The thickness is expected to comprise a thickness in the range of from about 0.25 mm to about 6 mm. In some embodiments, the heat sink The intended thickness of the assembly is in the range of from about 55 mm to about 5 mm. In other embodiments, the desired thickness of the heat sink assembly is in the range of from about 1 mm to about 4 mm. When using a metal such as solder Thermal interface materials (when they have a high modulus of elasticity compared to most polymer seas), it may be necessary to reduce the mechanical stress transmitted to the semiconductor grains by the thermal number mismatch to prevent crystal rupture. This stress transfer is minimized by increasing the bonding layer of the metal thermal interface material, reducing the thermal expansion coefficient of the heat sink, or changing the geometry of the heat sink to minimize the response. Examples of heat-expanded (four) number (cte) materials are retreating C, CuSiC, copper-graphite composites, carbon-carbon composites, diamonds, CUM〇CU layers, etc. Examples of geometrical changes are those that are partially or through. The slots are added to the heat sink to reduce the thickness of the heat sink, and the truncated, square base, inverted pyramid shape is formed to reduce stress by having a lower heat sink cross section of the 139065.doc -10-200949185 near the semiconductor die Hardness β In the intended heat sink assembly, after applying at least one coupling layer to the heat sink, at least one heat conducting layer is laid on the heat sink. The at least one coupling layer is removed from any oxidized barrier layer or The native deuterated layer is then coated. The coupling layers are designed to increase the interfacial bonding strength between the heat sink and the at least one thermally conductive layer while minimizing or eliminating any additional oxide layer formation on the heat sink. In some embodiments, at least one coupling layer comprises, a zinc-based material and/or alloy, tin, a tin-based material and/or alloy, or a combination thereof. In a preferred embodiment, any suitable method is available (including direct plating, high speed plating or another method) to coat at least one coupling layer. At least one of the bonding layers may also be laid in any suitable solid layer or pattern and may also be of any suitable thickness. As mentioned, at least one The heat sink assembly can be coupled to a metal-based coating, layer, and/or film. As used herein, the term "coupled" means that the surface and the coating, layer, and/or film are physically attached to each other, or There is physical attraction between the two parts of the substance or component, including bonding forces such as covalent and ionic bonding, and such as van der Waals force, diffusion bonding, electrostatic bonding, Coulomb bonding, hydrogen bonding, and/or magnetic attraction. Non-bonding force. Also, as used herein, the term coupling is intended to include the case where the heat sink assembly and the at least one thermally conductive layer, coating and/or film are directly attached to each other, but the term also encompasses the heat sink assembly and Where at least one of the thermally conductive layers, coatings and/or films are indirectly coupled to each other - such as an adhesion promoter layer between the heat sink assembly and the at least one thermally conductive layer, coating and/or film or at least a thermal conductive layer, a coating and / or the case where there is always another layer between the membranes. 139065.doc • 11 · 200949185 After coating at least one coupling layer, at least one thermally conductive layer may be applied, which may be deposited directly on at least a portion of at least one of the heat sink assemblies by using at least one coupling material or layer At least one thermally conductive layer, the at least one coupling material or layer is laid onto the heat sink assembly prior to application to the thermally conductive layer or coating. Alternatively, the layer or layers can be applied by any suitable method or device. The at least one thermally conductive layer may comprise, gold, indium, palladium, silver, tin, ruthenium, iridium or a combination thereof. The heat conductive coating, layer and/or film is deposited or applied to at least one surface of the heat sink assembly. At least one thermally conductive coating, layer, or film may also be applied to at least the surface of the heat sink assembly. The term coating, coating and/or in particular is used to coat at least one thermally conductive coating, the film and/or layer may be applied in liquid or melt form, may be applied in strip, layer or film form, or may be borrowed Deposited by vapor deposition, ore or electro-mine, and any other suitable deposition method. The at least one thermally conductive coating is typically laid by any method capable of producing a uniform layer having a minimum of voids or voids, and the layer can be further laid at a relatively high deposition rate. Many suitable methods and apparatus can be used to lay layers of this type or ultra-thin layers. One contemplated method is spot plating, pulse plating, reverse pulse plating, or a combination thereof, which is described in US Pat. No. 7,737,873, U.S. Application Serial No. 11/961,067, and PCT Application No. PCT/US04/04272 Co-owned and incorporated herein by reference in its entirety. Pulse plating, which is the intermittent plating as opposed to DC plating, can be applied with no or substantially void-free and/or voided layers. Another method of laying thin or ultra-thin layers is the pulse period reversal method or "PPR". The pulse cycle inversion method is superior to the pulse plating method because it actually "reverses" or consumes the film at the surface of the cathode 139065.doc 12 200949185. The typical cycle of the pulse period reversal can be 1 〇 ms at the 5 amp cathode section; then 1 ampere ampere, 0.5 ms, then 2 ms off time. ppR has several advantages. Hundreds of first, by stripping " or removing a small amount of film during each cycle, PPR forces each successive cycle to create a new nucleation site, resulting in an increase in porosity. Secondly, the cycle can be adapted to provide a very uniform enthalpy by selectively removing thick film regions during the "de-plating", or anode portion of the cycle. PR is not suitable for some metal deposition, such as gold. Deposition, because forging is carried out in a system free of free cyanide. Therefore, gold is plated from the cyanide compound (chelating agent) during the electric ring, but it is not possible to strip I during the deplating process because there is no cyanide which redissolves the gold. At least one electrically conductive coating, layer and/or film used in the subject matter described herein should be capable of being laid in a thin or ultra-thin continuous layer or pattern. The pattern can be created by using the mask, or by a device capable of laying the desired pattern. The intended pattern includes any arrangement that forms lines, fills empty spaces: dots or dots, either alone or in combination. Therefore, the intended pattern includes a straight line and a curved line: a chrome crossing line, a line having a widened or narrowed area, a strip line, and an overlapping line. It is expected that the thin layer and the ultra-thin coating stack _ or even down to the material 2 = (4) 1 μη1 down to about - angstrom, one (4) · ^ # sub-layer size range changes. The specific two pre-d thin layers are less than about 】 thick. The thin layer is less than about 500 (10) thick. In this extravagant & other embodiments, 'preferred to be about (10) (10) thick. In other realities, it is expected that the ultra-thin layer is small in nm thickness. He implements the financial, and the ultrathin layer is expected to be less than about 10 - in the embodiment, the nickel can be plated on the aluminum heat sink, the reinforcement and/or by means of at least one coupling material (139065.doc 13 200949185, for example, zinc). Or on the integrated heat sink to meet the heat needs of the mid-range CPU. In other embodiments, the heat transfer material may also comprise a protective layer or a protective coating. In the contemplated embodiment, the protective layer is designed to transfer the smooth surface to a thermally conductive layer or coating. The protective layer is expected to comprise a hard plastic such as PVC or polyethylene. In some embodiments, an electroplating process has been envisioned and disclosed herein to facilitate the fabrication of the desired heat sink assembly and stratified material. It is contemplated that the electrominening process can be coupled to conventional devices. The conventional device is then configured to electroplate at least one thermally conductive layer onto the heat sink material or component at a high speed (such as forging high speed electrical forging onto aluminum). In some embodiments, this method will provide a nickel-plated surface that can be additionally treated after electroplating. For example, the plated surface can be labeled and/or treated LASER, which is very similar to a conventional mine on a copper surface. Record the surface. In one embodiment, a piece of aluminum can be formed into any standard or non-standard shape for the heat sink. Use a soap or cleaning bath to remove any forming oil or stamping oil on the aluminum surface. The etching method then removes the native oxide layer ' of the aluminum substrate' and then deposits a thin layer of zinc, tin, copper, or a combination thereof and alloy onto the substrate. At least one thermally conductive coating (such as nickel, gold, indium, palladium, silver, tin, antimony, bismuth or combinations or alloys thereof) may be formed after the layers of zinc, tin, copper or combinations thereof and alloys are in place. Electroplating and/or coating onto the surface. In a contemplated embodiment, the thermal interface material can be deposited directly onto at least one side of the heat sink assembly after coating at least one coupling layer and at least one thermally conductive layer. I39065.doc •14·200949185 Surfaces such as the bottom surface, top Face or both. In some contemplated embodiments, the solder material can be applied directly to the heat sink via screen printing or by methods such as spraying, thermal spraying, liquid molding or powder coating. In other contemplated implementations, the film of the thermal interface material is deposited and combined with other methods of establishing the appropriate thermal interface material thickness, including direct attachment of the preform, or screen printing of the thermal interface stock slurry. ❿

圓1展示預期散熱器總成⑽之側視圖，散熱器總成⑽ 包含散熱片110、第一熱介面材料12〇、第二熱介面材料 140 ’其t該第一熱介面材料與該第二熱介面材料之間夹 有預期散熱器總成130。此圖中將散熱器總成13〇放大，其 中其包括散熱器組件132、至少一相接層134及至少一導熱 層136 #中錢熱器係' 經由該至少__ _接層輕接至該至 少-導熱層。晶粒加熱器15〇亦包括於此實施例—。在一 實施例中，熱介面材料可包含由漢威國際公司Circle 1 shows a side view of the desired heat sink assembly (10), the heat sink assembly (10) including a heat sink 110, a first thermal interface material 12A, a second thermal interface material 140', t the first thermal interface material and the second The desired heat sink assembly 130 is sandwiched between the thermal interface materials. In this figure, the heat sink assembly 13A is enlarged, wherein the heat sink assembly 132, the at least one contact layer 134, and the at least one heat conductive layer 136 are lightly connected via the at least __ _ layer The at least - thermally conductive layer. The grain heater 15A is also included in this embodiment. In one embodiment, the thermal interface material may be comprised by Hanwei International

Inteniati〇nal InC·)製造之"職"材料中之—者，铁 "PCM"材料包括PCM45、pcM45F以及其他材料。第^ 介面材料之厚度可為約2.5至3密耳。第二熱介面材料之： 度可適於該總成’包括稱為"無塾片之總成。 匕類之預期散熱器總成之熱效能展示於表1中 間的變化係由第—執公品u 厚度差異所引起。具有2.68 Μ之第4介面㈣之所估計域熱器加 〇.52°C/W，則該鋁今“ 1 - s應為約 J飞鋁政熱器之熱效能應比銅散熱器 30%。 土 乂 形成層化熱介面材料 散熱器總成及熱傳遞材料之方法 139065.doc -15- 200949185 200展示於腿2 Φ，n A t 献哭… a)提供散熱器組件，其中該散Inteniati〇nal InC·) manufactured in the “Business " Materials], Iron "PCM" materials include PCM45, pcM45F and other materials. The thickness of the second interface material can be from about 2.5 to 3 mils. The second thermal interface material: the degree can be adapted to the assembly 'including an assembly called "no plaque. The thermal performance of the expected heat sink assembly of the anthraquinone shown in Table 1 is caused by the difference in thickness of the first-command. The estimated domain heater with the 4th interface (4) of 2.68 〇 is added at .52 °C/W, then the aluminum "1 - s should be about J. The thermal efficiency of the aluminum athermal heater should be 30% higher than that of the copper radiator. Method for forming a stratified thermal interface material heat sink assembly and heat transfer material for soil 139 139065.doc -15- 200949185 200 shown on leg 2 Φ, n A t offering crying... a) providing a heat sink assembly, wherein the

熱器組件包合I uwe 表面、下表面及至少一散熱器材料210; b)提供至少—為；柏& tl _ ㈣材料’其中該稱接材料係直接沈積至散 :::::且件之下表面上220 ; c)在散熱器組件之下表面之至 .P刀上沈積、塗覆或塗佈至少一導熱塗層、膜或層 230，及d)將至少—熱介面材料或另—材料沈積、塗覆或 塗佈至散熱器組件或總成之至少一表面之至少一部分上 預』方去亦包含在沈積至少-_接材料之前清潔散 熱器組件250。另冰 卜’ 一些實施例包含藉由蝕刻方法來移 除原生氧化層或材料、氧化障壁層或材料或其組合260。 在，、他實施例中，預期方法進一步包含將至少一熱介面材 =另一材料或組份沈積、塗覆或塗佈至散熱器組件之至 ，J表面之至少一部分上或散熱器總成之至少一表面之至 少一部分上270。 在經沈積、塗覆或塗佈之後，熱介面材料層包含直接耦 接至導熱塗層或層之部分及曝露於大氣或由可恰在安裝散 熱器組件之前移除的保護層或膜覆蓋之部分。額外方法包 括提供至少一黏附組件及將該至少一黏附組件耦接至至少 一散熱器材料之至少一表面的至少部分上，及/或耦接至 熱介面材料之至少部分上或熱介面材料之至少部分中。可 將包括基板層之至少一額外層耦接至層化介面材料上。 如本文所述’最佳介面材料及/或組份具有高熱導率及 局機械順從性（例如，在施加力時將有彈性地彎曲）。高熱 導率減少方程式1之第一項，而高機械順從性減少第二 139065.doc 200949185 項。本文中所述之層化介面材料及層化介面材料之個別組 伤達成此等目才*。當適當地製造時，本文中所述之散熱器 組件將橫越熱介面材料與散熱器組件之配合表面之間的距 離，藉此允許自一表面至另一表面之連續高傳導性路徑。 合適熱介面組份包含可符合配合表面（"濕潤"表面），具有 低塊體熱阻且具有低接觸抗性之彼等材料。 亦可製造/製備包含焊接材料之合適介面材料。焊接材 料可包含任何合適之焊接材料或金屬，諸如銦、銀、鋼、 鋁、錫、鉍、鉛、鎵及其合金、塗有銀之鋼及塗有銀之 鋁，但焊接材料較佳地包含銦或基於銦之合金。合適介面 材料可包含傳導性填料、金屬材料、焊接合金及其組合。 如本文所述，基於焊料之介面材料具有與使用及組件工 程直接有關的若干優勢，諸如：a)高塊體熱導率，b)可在 接合表面處形成金屬鍵，較低之接觸抗性，c)可易於將介 面焊接材料併入微組件、用於衛星之組件及小型電子組件 中〇 可將諸如塗有低模數金屬之聚合物球體或微球體之額外 組份添加至焊接材料中，以減少焊料之塊體彈性模數。亦 可將額外組份添加至焊料中，以促進濕潤晶粒及/或散熱 器表面。預期此等添加物為矽化物形成劑或具有比矽高之 氧或氮親和性的元素。該等添加物可為滿足所有要求之一 兀素或各具有一優勢之多個元素。另外，可添加合金元 素，其增加銦或焊料基質中摻雜劑元素之溶解度。 熱填料粒子可分散於熱介面組份中，或混合物應有利地 139065.doc -17· 200949185 具有高熱導率。合適填料材料包括金屬，諸如銀、鋼、链 及其合金；及其他化合物，諸如氮化刪、氣化銘、塗有銀 之銅、塗有銀之銘、傳導聚合物及碳纖維。氮化领與 氮化蝴與銀/鋼之組合亦提供增強之熱導率。至少⑼重旦 百分比之量的氮化硼與至少約60重量百分比之 : 別有用的。宜使用熱導率大於約20w/mt且最好是至= 4〇 W/m°C之填料。最理想的情況需要熱導率不小於約80 W/mt：之填料。 80 可製造’製備包含樹脂混合物及至少-桿接材料之另一 預期且合適的熱介面材料。樹脂材料可包 =:Γ_宜為基於_之材料，其 婦基聚夕氧、乙烯基Q樹脂、氫化物官能性石夕氧貌及銘 =烯基梦氧烧之-或多種化合物。料材料可包含任何人 適之焊接材料或金屬，諸如銦、銀m、/ 岛、鎵及其合金、塗有銀之鋼及塗有銀之銘 宜包含銦或基於銦之合金。 仁知接材科 如本文所述，基於焊料 材料、聚合物焊接… (諸如，聚合物輝接 且：盘：材料及其他基於浑料之介面㈣ :材二Μ用及組件工程直接有關的若干優勢，諸如：3)介 接材料可用於填充約2毫米或更小之小間 隙以及聚合物焊接材科可有效地耗散彼等極小間 及c)可易VJ:、中之熱’這與大多數f知烊接材料不同， =:將介面材料/聚合物谭接材 衛星之組件及小型電子組件中。 139065.doc -J8- 200949185 亦可具有適當熱填料的含樹脂之介面材料及焊接材料 (尤其包含聚;5夕氧樹脂之彼等材料）可展現小於〇 5〇c _crn2/w 之熱性能。與熱脂不同’該材料之熱效能在IC器件中之熱 循環或流動循環之後不會降級，因為液態聚矽氧樹脂在熱 活化之後將交聯以形成軟凝膠。 預期分散於樹脂混合物中之焊接材料為用於所要應用之 任何合適焊接材料。較佳焊接材料為銦錫（InSn)合金、銦 _ 銀（InAS)合金、銦鉍（InBi)合金、基於銦之合金、錫銀銅 合金（SnAgCu)、錫鉍及合金（SnBi)及基於鋁之化合物及合 金尤其較佳之焊接材料為包含銦之彼等材料。焊料可能 摻雜或可能不摻雜額外元素以促進濕潤散熱器或晶粒背 面。 如同先前所描述之熱介面材料及組份，熱填料粒子亦可 分散於樹脂混合物中。若熱填料粒子存在於樹脂混合物 中，則彼等填料粒子應有利地具有高熱導率。合適填料材 ❹ 料包括銀、銅、鋁及其合金；氮化硼、鋁球體、氮化鋁、 塗有銀之銅、塗有銀之鋁、碳纖維及塗有金屬、金屬合 I、傳導性聚合物或其他複合材料之碳纖維。氮化硼與銀 或氮化硼與銀/銅之組合亦提供增強之熱導率。至少加重 1百分比之量的氮化硼、至少7〇重量百分比之量的鋁球體 及至}約60重量百分比之量的銀為特別有用的。此等材料 亦可包含金屬薄片或燒結金屬薄片。 可併入如先前所述之氣相生長碳纖維及諸如實質上球形 填料粒子之其他填料。另外，實質上球形形狀或其類似形 139065.doc -19- 200949185 狀亦將提供在壓縮期間對厚度之一些控制β可藉由添加官 能性有機金屬耦合劑或濕潤劑（諸如，有機矽院、有機欽 酸鹽、有機鍅’等等）來促進填料粒子之分散。該等有機 金屬耦合劑（尤其有機鈦酸鹽）亦可用於促進應用過程期間 焊接材料之炼化。 此等化合物可包含以下各物中之至少一些：i至2〇重量 百分比之至少一聚石夕氧化合物、0至10重量百分比之有機 鈦酸鹽、5至95重量百分比之至少一焊接材料。此等化合 物可包括一或多種可選添加物’例如，濕潤性增強劑。此 等添加物之量可改變，但其一般可適用於以下列近似量 (以重量百分比計）存在：高達總量（填料加樹脂）的9 5 %之填 料；（總量的）0.1%至5%之濕潤性增強劑；及（總量 的）0.01%至1%之助黏劑。應注意，添加物（至少約〇5%之 碳纖維）顯著增加熱導率。此等組合物係描述於美國已授 權專利6706219、2004年2月9曰申請之美國申請案第 10/775989號及PCT第PCT/US02/14613號中，其皆為共同擁 有的且以引用之方式全文併入本文中。 預期焊料組合物如下：InSn=52% In(以重量計）及48% Sn(以重量计），其具有life之熔點；jnAg=97% in(以重量 計）及3% Ag(以重量計），其具有143。〇之熔點；In==1〇〇%銦 (以重量計），其具有157。(：之熔點；SnAgCu=94.5%錫（以重 量計）、3.5°/。銀（以重量計）及2%銅（以重量計），其具有 217C之熔點；SnBi=60%錫（以重量計）及40%鉍（以重量 什）’其具有170°C之熔點。應瞭解，包含不同組份百分比 139065.doc •20- 200949185 之其他組合物可得自本文所含之標的物。 本文所涵蓋之相變材料包 , 權、聚5物蠟或其混合物The heat assembly comprises an I uwe surface, a lower surface and at least one heat sink material 210; b) providing at least - a cypress & tl _ (four) material 'where the material is deposited directly to the dispersion ::::: and 220 on the underside of the member; c) depositing, coating or coating at least one thermally conductive coating, film or layer 230 on the lower surface of the heat sink assembly to the .P blade, and d) at least the thermal interface material or Alternatively, depositing, coating or coating the material onto at least a portion of at least one surface of the heat sink assembly or assembly also includes cleaning the heat sink assembly 250 prior to depositing at least the material. Further ice some embodiments include the removal of a native oxide layer or material, an oxidized barrier layer or material, or a combination thereof 260 by an etching process. In his embodiment, the method of the invention further comprises depositing, coating or coating at least one thermal interface material = another material or component onto the heat sink assembly to at least a portion of the J surface or the heat sink assembly. At least a portion of at least one surface is 270. After deposition, coating, or coating, the layer of thermal interface material includes a portion that is directly coupled to the thermally conductive coating or layer and is exposed to the atmosphere or covered by a protective layer or film that can be removed just prior to mounting the heat sink assembly. section. An additional method includes providing at least one adhesive component and coupling the at least one adhesive component to at least a portion of at least one surface of the at least one heat sink material, and/or to at least a portion of the thermal interface material or the thermal interface material At least in part. At least one additional layer comprising a substrate layer can be coupled to the layered interface material. The 'best interface materials and/or components as described herein have high thermal conductivity and local mechanical compliance (e.g., will flex elastically when applied). The high thermal conductivity reduces the first term of Equation 1, while the high mechanical compliance decreases the second 139065.doc 200949185. The individual groupings of the layered interface material and the layered interface material described herein achieve this goal*. When properly fabricated, the heat sink assembly described herein will traverse the distance between the thermal interface material and the mating surface of the heat sink assembly, thereby allowing for a continuous high conductivity path from one surface to the other. Suitable thermal interface components include those materials that conform to the mating surface ("wet "surface), have low bulk thermal resistance and have low contact resistance. Suitable interface materials comprising solder materials can also be made/prepared. The solder material may comprise any suitable solder material or metal such as indium, silver, steel, aluminum, tin, antimony, lead, gallium and alloys thereof, silver coated steel and silver coated aluminum, but the solder material is preferably Contains indium or an alloy based on indium. Suitable interface materials can include conductive fillers, metallic materials, solder alloys, and combinations thereof. As described herein, solder-based interface materials have several advantages directly related to use and component engineering, such as: a) high bulk thermal conductivity, b) metal bond formation at the joint surface, lower contact resistance , c) can easily incorporate interface solder materials into micro-components, components for satellites, and small electronic components. Additional components such as polymer spheres or microspheres coated with low modulus metals can be added to the solder material. To reduce the bulk modulus of the solder. Additional components can also be added to the solder to promote wetting of the die and/or heat sink surface. These additives are expected to be oxime formers or elements having a higher affinity for oxygen or nitrogen than ruthenium. These additives may be ones that satisfy one of the requirements or that have an advantage. Additionally, alloying elements may be added which increase the solubility of the dopant elements in the indium or solder matrix. The hot filler particles may be dispersed in the thermal interface component, or the mixture should advantageously have a high thermal conductivity of 139065.doc -17·200949185. Suitable filler materials include metals such as silver, steel, chains and alloys thereof; and other compounds such as nitriding, gasification, silver coated copper, silver coated, conductive polymers and carbon fibers. The combination of nitrided and nitrided and silver/steel also provides enhanced thermal conductivity. At least (9) a percentage of heavy boron nitride and at least about 60 weight percent: not useful. Fillers having a thermal conductivity greater than about 20 w/mt and preferably up to 4 〇 W/m ° C are preferred. The most desirable case requires a filler having a thermal conductivity of not less than about 80 W/mt:. 80 It is possible to manufacture another desirable and suitable thermal interface material comprising a resin mixture and at least a rod-bonding material. Resin material can be packaged =: Γ _ should be based on _ material, its gynecological polyoxygen, vinyl Q resin, hydride functional stone oxime and Ming = alkenyloxy- or a variety of compounds. The material may comprise any suitable solder material or metal such as indium, silver m, / island, gallium and its alloys, silver coated steel and silver coated with indium or indium based alloys. Known as the material described in this article, based on solder materials, polymer soldering... (such as polymer fused and: disk: material and other materials based on the material (4): material and other components directly related to the project engineering Advantages such as: 3) the interface material can be used to fill small gaps of about 2 mm or less and the polymer welding material can effectively dissipate these extremely small spaces and c) can be easily VJ: Most of the materials are different, =: will be the interface material / polymer tandem satellite components and small electronic components. 139065.doc -J8- 200949185 Resin-containing interface materials and solder materials (especially comprising poly; oxime resin) which may also have suitable thermal fillers may exhibit thermal properties less than 〇 5〇c _crn2/w. Unlike thermal grease, the thermal performance of the material does not degrade after thermal cycling or flow cycling in the IC device because the liquid polyoxynoxy resin will crosslink after thermal activation to form a soft gel. The solder material dispersed in the resin mixture is expected to be any suitable solder material for the desired application. Preferred solder materials are indium tin (InSn) alloy, indium-silver (InAS) alloy, indium germanium (InBi) alloy, indium based alloy, tin silver copper alloy (SnAgCu), tin antimony and alloy (SnBi) and based on aluminum. Particularly preferred solder materials for the compounds and alloys are those comprising indium. The solder may or may not be doped with additional elements to promote wetting of the heat sink or grain back. As with the previously described thermal interface materials and components, the thermal filler particles can also be dispersed in the resin mixture. If the hot filler particles are present in the resin mixture, their filler particles should advantageously have a high thermal conductivity. Suitable filler materials include silver, copper, aluminum and their alloys; boron nitride, aluminum spheres, aluminum nitride, silver coated copper, silver coated aluminum, carbon fiber and coated with metal, metal I, conductivity Carbon fiber of polymer or other composite material. The combination of boron nitride and silver or boron nitride with silver/copper also provides enhanced thermal conductivity. It is particularly useful to at least add 1 part by weight of boron nitride, at least 7 parts by weight of aluminum spheres, and to about 60 weight percent of silver. These materials may also include metal flakes or sintered metal flakes. Vapor-grown carbon fibers as described previously and other fillers such as substantially spherical filler particles may be incorporated. In addition, a substantially spherical shape or the like 139065.doc -19-200949185 will also provide some control over the thickness during compression, by adding a functional organometallic coupling agent or wetting agent (such as an organic brothel, Organic acid salts, organic hydrazines, etc., to promote dispersion of the filler particles. These organometallic coupling agents (especially organic titanates) can also be used to promote refining of the solder material during the application process. Such compounds may comprise at least some of the following: i to 2% by weight of at least one polyoxo compound, 0 to 10 weight percent of organic titanate, and 5 to 95 weight percent of at least one solder material. Such compounds may include one or more optional additives' such as a wettability enhancer. The amount of such additives may vary, but it is generally applicable to the following approximate amounts (in percent by weight): up to a total of 90% filler (filler plus resin); (total) 0.1% to 5% wet strength enhancer; and (total) 0.01% to 1% adhesion promoter. It should be noted that the additive (at least about 5% of the carbon fiber) significantly increases the thermal conductivity. Such compositions are described in U.S. Patent No. 6,706,219, U.S. Application Serial No. 10/775,989, filed on Feb. 19, 2004, and PCT/US02/14613, all of which are commonly owned and incorporated herein by reference. The manner is fully incorporated herein. The solder composition is expected to be as follows: InSn = 52% In (by weight) and 48% Sn (by weight) having the melting point of life; jnAg = 97% in by weight and 3% Ag by weight ), which has 143. Melting point of bismuth; In = 1 〇〇 % indium (by weight) having 157. (: melting point; SnAgCu = 94.5% tin (by weight), 3.5 ° /. silver (by weight) and 2% copper (by weight), which has a melting point of 217 C; SnBi = 60% tin (by weight And 40% 铋 (by weight) 'has a melting point of 170 ° C. It should be understood that other compositions containing different component percentages 139065.doc • 20- 200949185 can be obtained from the subject matter contained herein. Phase change material package, weight, poly 5 wax or mixture thereof

(诸如，石蠟）。石蠟為具有通式CH ^ ^ 巧LnH2n + 2且具有在約2〇。(：至 ⑽。之|已討的熔點之 夕t 1认。 焱之此σ物。一些預期熔點 广為PCM: 45。及6吖。具有此範圍令之熔點的熱介面組 =當=及職6咖_均由漢威國際公司製造。聚合物 纖通常為聚乙烯蟻、聚而、膝秘 ^狄丙烯蠟，且具有約4〇t至160°C之 熔點範圍。(such as paraffin). Paraffin wax has the general formula CH ^ ^ LnH2n + 2 and has about 2 〇. (: to (10). | The melting point of the already discussed t 1 recognition. This σ thing. Some expected melting points are widely PCM: 45. and 6 吖. The thermal interface group with this range makes the melting point = when = and The 6th coffee _ is manufactured by Hanwei International Co., Ltd. The polymer fiber is usually a polyethylene ant, a polysilicon, a propylene wax, and has a melting point range of about 4 Torr to 160 °C.

Ο 舰45包含約3.G W/mK之熱料、約〇.25。〇之熱 阻，其通常以約〇顧5佩04贿)之厚度經塗覆且包含在 約5至30 Psi之施加壓力下易於流動的軟質材料。pcM45之 典型特性為：a)超高封裝密度_超過嶋，b)傳導性填料， c)極低熱阻，及如先前所提及，…約之相變溫度。 PCM60HD包含約5.Q w/mK之熱導率約。m一歡 ·、、、阻其通常以約0.0(^5^(0 04 mm)之厚度經塗覆且包含 在約5至30 psi之施加壓力下易於流動的軟質材料。 PCM60HD之典型特性為：a)超高封裝密度超過祕，㈣ 導I1生填料，c)極低熱阻，及如先前所提及，#約⑼。C之相 變脈度。TM350(不包含相變材料且由漢威國際公司製造 之熱”面組份）包含約3.〇 w/mK之熱導率、約〇.25。〇 _ Cm2/W之熱阻，其通常以約0.0015吋（〇.〇4 mm)之厚度經塗 覆且包含可熱固化為軟凝膠的漿料。TM3 50之典型特性 為：a)超高封裝密度_超過8〇% ’ b)傳導性填料，c)極低熱 阻，d)約125。(：之固化溫度，及e)可施配之非基於聚矽氧之 139065.doc -21- 200949185 熱凝膠。PCM45F包含約2·35 w/mK之熱導率、約〇2(TC- cm /W之熱阻，其通常以約0.002 mm之厚度經塗覆且包含 在約5至40 psi之施加壓力下易於流動的軟質材料。 PCM45F之典型特性為：a)超高封裝密度-超過8〇%，b)傳 導性填料，c)極低熱阻，及如先前所提及，幻約杉^之相 變溫度。 相變材料可用於熱介面組件應用中，因為其在室溫下為 固體且可易於預塗覆至熱管理組件上。在相變溫度以上之 ❹ 操作溫度下’該材料為液體且行為表現如同熱脂。相變溫 度為發生吸熱及散熱之熔融溫度。 ❹ 然而，基於石蠟之相變材料具有若干缺點。其單獨可能 極易碎且難以處理。其亦傾向於在熱循環期間自塗覆該等 材料之器件中之間隙中擠出，此與油脂極類似。本文中所 述之橡膠-樹脂改質的石蠛聚合物蠟系統避免了此等問題 且提供顯著改良之處理簡易性，能夠以可撓性膠帶或固體 ^形式製ϋ ’且在M力下不會果出或滲出。雖然橡膠-樹 月曰-一蟻混合物可具有相同或近似相同之溫度，但其、熔融黏 付多且其不易遷移。此外，可將橡膠·蠘樹脂混合物 設計為自交聯’此確保在某些應用中消除泵出問題。預期 變材料之實例為馬來化石蠛、聚乙稀·順丁烯二酸肝蠕 及聚丙烯-順丁烯二酸酐蠟。橡膠_樹脂-蠟混合物將在約Μ 至150 C之間的溫度下功能上形成以形成交聯橡膠·樹脂網 路0 預期熱介面組件可以可施配液體漿料形式提供，其係藉 139065.doc -22- 200949185 由施配方法（老如，絲姻〃斗、 4、·祠印刷或模板印刷）經塗覆且接著在 必要時固化。其亦可以供 谀：復於介面表面上之高順從 性、經固化、彈性體膜或薄片形式提供，諸如散熱片。盆 可進-步以可藉由任何合適施配方法（諸如，絲網印㈣ 喷墨印刷)塗覆至表面上之軟凝膠或液體形式提供及製 造。更進-步地，熱介面組件可以可直接塗覆至介面表面 或電子組件上之膠帶形式提供。The ship 45 contains approximately 3.G W/mK of hot material, approximately 〇.25. The heat resistance of the crucible, which is usually coated with a thickness of about 5 to 10, is contained and contains a soft material that flows easily under an applied pressure of about 5 to 30 Psi. Typical characteristics of pcM45 are: a) ultra-high packing density _ over 嶋, b) conductive packing, c) very low thermal resistance, and as mentioned previously, ... about the phase transition temperature. PCM60HD contains a thermal conductivity of about 5.Q w/mK. m hua, 、, 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 : a) Ultra-high packing density exceeds secret, (iv) leads to I1 raw filler, c) extremely low thermal resistance, and as mentioned previously, #约(9). The phase change of C. TM350 (hot component containing no phase change material and manufactured by Hanwei International Co., Ltd.) contains a thermal conductivity of about 3. 〇w/mK, a thermal resistance of about 2525. 〇_Cm2/W, which is usually It is coated with a thickness of about 0.0015 吋 (〇.〇4 mm) and contains a slurry that can be thermally cured into a soft gel. The typical characteristics of TM3 50 are: a) Ultra-high packing density _ more than 8〇% ' b) Conductive filler, c) very low thermal resistance, d) about 125. (: curing temperature, and e) non-polyoxo-based 139065.doc -21- 200949185 thermal gel. PCM45F contains about 2 · 35 w / mK thermal conductivity, about 〇 2 (TC- cm / W thermal resistance, which is usually coated in a thickness of about 0.002 mm and contains soft pressure that is easy to flow at an applied pressure of about 5 to 40 psi The typical characteristics of PCM45F are: a) ultra-high packing density - over 8〇%, b) conductive filler, c) very low thermal resistance, and as mentioned previously, the phase transition temperature of the sylvestre. Variable materials can be used in thermal interface component applications because they are solid at room temperature and can be easily pre-coated onto thermal management components. At operating temperatures above the phase transition temperature, the material is liquid and It behaves like a thermal grease. The phase transition temperature is the melting temperature at which heat absorption and heat dissipation occur. ❹ However, paraffin-based phase change materials have several disadvantages. They may be extremely fragile and difficult to handle alone. They also tend to self-coat during thermal cycling. Extrusion in the gaps in the device covering the materials, which is very similar to grease. The rubber-resin-modified dendritic polymer wax system described herein avoids such problems and provides significantly improved handling ease. It can be made of flexible tape or solid form and does not show or bleed out under M force. Although the rubber-tree scorpion-ant mixture can have the same or approximately the same temperature, it is melt-adhesive. It is also difficult to migrate. In addition, the rubber·ruthenium resin mixture can be designed to be self-crosslinking'. This ensures that the pumping problem is eliminated in some applications. Examples of variable materials are expected to be Malay fossils, polyethylene and cisplatin. Hesonic acid hepatic creep and polypropylene-maleic anhydride wax. The rubber_resin-wax mixture will functionally form at a temperature between about Μ and 150 C to form a crosslinked rubber·resin network 0. group It may be provided in the form of a liquid slurry which is applied by a dispensing method (old, silky, stencil, stencil or stencil printing) and then when necessary, by 139065.doc -22-200949185 Curing. It can also be supplied in the form of a high compliance, cured, elastomeric film or sheet on the interface surface, such as a heat sink. The basin can be advanced by any suitable method of application (such as Screen printing (iv) inkjet printing) provides and manufactures a soft gel or liquid form applied to the surface. Further, the thermal interface component can be provided in the form of a tape that can be applied directly to the interface surface or electronic component.

預附接/預、组裝之熱解決方案及/或IC(互連）封裝包含本 文中所述之熱介面材料之—或多個組份及至少—黏附組 份。此等熱介面材料對於多種介面條件及需求展現出低熱 阻。如本文所使用，術語"黏附組份"意謂能夠藉由表面附 接而將其他物質結合在一起之任何無機或有機，天然或合 成物質。在-些實施例中，黏附組份可添加至熱介面材料 中或與熱介面材料混合，實際上可為熱介面材料，或可與 熱介面材料耦接但不與其混合。一些預期黏附組份之實例 包含來自SONY之雙面膠帶’諸如s〇NY Τ4411、3M F9460PC或S0NY T41〇〇D2〇3。在其他實施例中黏附劑 可提供不依靠熱介面材料而將散熱組件附接至封裝基板上 之額外功能。 可藉由使用本文中先前所述之方法來單獨製備且提供熱 介面組件、可交聯熱介面組件及散熱器組件。接著，實體 耗接兩個組件以產生層化介面材料。如本文所使用，術語 ”介面"意謂在物質或空間之兩部分之間形成共同邊界的耦 接或結合。介面可包含物質或組份之兩部分的實體附接或 139065.doc • 23- 200949185 實體耦接’或物質或組份之兩部分之間的物理吸弓I — 諸U貝及離子鍵結之鍵結力及諸如凡得瓦爾力、靜電結 口庫結合、氫結合及/或磁吸引之非鍵結力。如本文 所述，亦可藉由將一組件塗覆至另一組件之表面之動作而 實體麵接兩個組件。 © ❹ 接著可將層化介面材料塗覆至基板、另—表面或另一 層化材料上。電子組件包含層化介面材料、基板層及額外 層:層化介面材料包含散熱器組件及熱介面組件。本文所 涵蓋之基板可包含任何所要之實質上固體材料。特定所要 之基板層將包含膜、玻璃、陶究、塑膠、金屬或經塗佈金 屬或複合材料。在較佳實施例中，基板包含石夕或碎化鍺晶 粒或明圓表面、諸如在鑛鋼、錄銀、鍵錄或鑛金引線框中 可見之封裝表面、諸如在電路板或封裝互連迹線、通孔壁 或加強件介面中可見之鋼表面（"鋼"包括對裸銅及其氧化物 的考慮）、諸如在基於㈣亞胺之撓㈣裝巾可見之基於 聚合物之封裝或板介面、錯或其他金屬合金焊球表面玻 璃及諸如聚酿亞胺之聚合物。在考慮内聚介面時，甚至可 基板1義為另-聚合物材料。在更佳實施例中，基板 璃及另-聚合物。業中爷見之材料，諸如石夕、銅、玻 可將額外材料層耦接至屉彳卜八 層化〃面㈣上以_建置層化 t或印刷電路板。預期，額外層將包含類似於本文已描 :之::的:料，包括金屬、金屬合金、複合材料、聚合 物車體、有機化合物、無機化合物、有機金屬化合物、 I39065.doc -24· 200949185 樹脂、黏附劑及光學波導材料。 若干方法及多種熱介面材料可用以形成此等預附接/預 組裝之熱解決方案組件。一種用於形成熱解決方案/封裝 及/或ic封裝之方法包括：a)提供本文中所述之熱傳遞材 料；b)提供至少一黏附組件；c)提供至少一表面或基板； d)將該至少一熱傳遞材料及/或材料與該至少一黏附組件耦 接以形成黏附單元；e)將該黏附單元耦接至該至少一表面 睿The pre-attachment/pre-assembly, assembly thermal solution and/or IC (interconnect) package comprises - or multiple components and at least - adhesion components of the thermal interface material described herein. These thermal interface materials exhibit low thermal resistance for a variety of interface conditions and requirements. As used herein, the term "sticking component" means any inorganic or organic, natural or synthetic material that is capable of bringing together other substances by surface attachment. In some embodiments, the adhesion component can be added to or mixed with the thermal interface material, can be a thermal interface material, or can be coupled to, but not mixed with, the thermal interface material. Some examples of contemplated adhesion components include double-sided tapes from SONY such as s〇NY® 4411, 3M F9460PC or S0NY T41〇〇D2〇3. In other embodiments the adhesion agent can provide additional functionality for attaching the heat dissipating component to the package substrate without relying on the thermal interface material. The thermal interface component, the crosslinkable thermal interface component, and the heat sink assembly can be separately prepared and provided by using the methods previously described herein. The entity then consumes two components to create a layered interface material. As used herein, the term "interface" means the coupling or combination of a common boundary between two parts of a substance or space. The interface may comprise a physical attachment of two parts of a substance or component or 139065.doc • 23 - 200949185 Physical coupling 'or physical attraction between two parts of a substance or component I - Bonding force of U and ionic bonds and such as Van der Waals force, electrostatic junction pool combination, hydrogen bonding and / Or non-bonding force of magnetic attraction. As described herein, two components can also be physically joined by applying one component to the surface of another component. © ❹ The layered interface material can then be coated To the substrate, the other surface or another layer of material. The electronic component comprises a layered interface material, a substrate layer and an additional layer: the layered interface material comprises a heat sink component and a thermal interface component. The substrate covered herein may comprise any desired Substantially a solid material. The particular desired substrate layer will comprise a film, glass, ceramic, plastic, metal or coated metal or composite. In a preferred embodiment, the substrate comprises a stone or shattered ruthenium or crystal circle Surfaces, such as those found in steel, silver, key, or gold-plated leadframes, such as steel surfaces visible in circuit boards or package interconnect traces, through-hole walls, or reinforcement interfaces ("steel "considering considerations for bare copper and its oxides, such as polymer-based packaging or board interfaces, misaligned or other metal alloy solder ball surface glasses, and such as 聚亚亚, based on (iv) imine-based scratches (4) A polymer of an amine. When considering a cohesive interface, even the substrate 1 can be referred to as a further polymer material. In a more preferred embodiment, the substrate glass and the other polymer are materials such as Shi Xi, Copper, glass can be coupled to the layer of additional material to the 八 层 八 layer (4) to build stratified t or printed circuit board. It is expected that the additional layer will contain something like this: Materials, including metals, metal alloys, composites, polymer bodies, organic compounds, inorganic compounds, organometallic compounds, I39065.doc -24· 200949185 resins, adhesives and optical waveguide materials. Several methods and a variety of thermal interface materials are available To form this Pre-attached/pre-assembled thermal solution assembly. A method for forming a thermal solution/package and/or ic package includes: a) providing a heat transfer material as described herein; b) providing at least one adhesive component; Providing at least one surface or substrate; d) coupling the at least one heat transfer material and/or material to the at least one adhesive component to form an adhesion unit; e) coupling the adhesion unit to the at least one surface

或基板上以形成熱封裝；〇視情況將額外層或組件耦接至 該熱封裝上。 本文所述之預期熱解決方t、1(：封|、熱介面組件、層 化介面材料及散熱器組件之應用包含將該等材料及/或組 件併入另一層化材料、電子組件或完成之電子產品中。如 本文所預期’-般將電子組件視為包含可用於基於電子之 產品中的任何層化組件。預期電子組件包含電路板、晶片 封裝刀隔薄片、電路板之介電組件、印刷線路板，及電 路板之其他組件，諸如電容H、電感n及電阻ϋ。 ⑽，已揭示散熱器總成、組件及相關材料之特定實施 用’包括其製造方法。然而此項技術者將顯 ’在不悖離本文十本發明概念之情況下，除已描述 2正料亦有可能進行多種其他修正。因此，本發明標 解釋2於本揭示案之精神以外不應受到限制。此外，在 時，應以與上τ文-致之最廣泛可能方式來 方式提及元件、二包含"應解釋為以非排外性 、、或步驟’從而指示可存在或利用所提 139065.doc -25- 200949185 及之元件、組件或步驟，或可將其與未明確提及之其他元 件、組件或步驟組合。 表1 樣本 TIM1T(密耳） 功率(w) 晶粒溫度(°C) 散熱片溫度(°C) Theta_d-s (°C/W) Cul 2.68 141.24 102.34 45.54 0.40 Cu2 2.85 140.96 103.96 45.84 0.41 All 3.40 118.11 109.66 41.00 0.58 A12 3.55 117.99 111.39 40.13 0.60 【圖式簡單說明】 圖1展示預期散熱器總成之側視圖。 圖2展示形成層化熱介面材料、散熱器總成及熱傳遞材 料之預期方法。 表1展示預期散熱器總成之熱效能。 【主要元件符號說明】 100 預期散熱器總成 110 散熱片 120 第一熱介面材料 130 預期散熱器總成 132 散熱器組件 134 至少一柄接層 136 至少一導熱層 140 第二熱介面材料 150 晶粒加熱器 139065.doc -26-Or on the substrate to form a thermal package; attach an additional layer or component to the thermal package, as appropriate. The application of the contemplated thermal solution t, 1 (: sealing |, thermal interface component, layered interface material, and heat sink assembly described herein) includes incorporating the materials and/or components into another layered material, electronic component, or finish In electronic products, as is contemplated herein, electronic components are considered to include any tiered components that can be used in electronic-based products. It is contemplated that electronic components include circuit boards, chip package lamella, and dielectric components of circuit boards. , printed circuit boards, and other components of the circuit board, such as capacitor H, inductor n, and resistor ϋ. (10), specific implementations of the heat sink assembly, components, and related materials have been disclosed 'including their manufacturing methods. However, the skilled person It will be apparent that various other modifications are possible in addition to the concept of the present invention. Therefore, the subject matter of the present invention is not limited by the spirit of the present disclosure. In the meantime, the element should be referred to in the broadest possible way, and the second inclusion should be interpreted as non-exclusive, or step 'to indicate that it may exist. Use 139065.doc -25- 200949185 and its components, components or steps, or combine it with other components, components or steps not explicitly mentioned. Table 1 Sample TIM1T (mil) Power (w) Grain Temperature (°C) Heat sink temperature (°C) Theta_d-s (°C/W) Cul 2.68 141.24 102.34 45.54 0.40 Cu2 2.85 140.96 103.96 45.84 0.41 All 3.40 118.11 109.66 41.00 0.58 A12 3.55 117.99 111.39 40.13 0.60 Figure 1 shows a side view of an intended heat sink assembly. Figure 2 shows an expected method of forming a layered thermal interface material, a heat sink assembly, and a heat transfer material. Table 1 shows the thermal performance of the intended heat sink assembly. DESCRIPTION OF REFERENCE NUMERALS 100 Heat sink assembly 110 Heat sink 120 First heat interface material 130 Heat sink assembly 132 Heat sink assembly 134 At least one handle layer 136 At least one heat conductive layer 140 Second heat interface material 150 Grain heater 139065.doc -26-

Claims (1)

200949185 七、申請專利範圍： 一種散熱器總成，其包含： 一散熱器組件， 至少一耦接層，及 至少一導熱層’其十該散熱器組件係經由該至少一柄 接層耦接至該至少一導熱層。 2_ Ο 3. 如請求項1之散熱器總成，其中該散熱器組件包含生成 氧化物之材料。 如請求項2之散熱器總成，其中該生成氧化物之材料包 含鋁。 4.如請求項1之散熱器總成，其中該散熱器組件包含氧化 層、氧化障壁層或其組合。 5·如清求項1之散熱器總成，其中該至少一耦接層包含 辞、基於鋅之材料、錫、基於錫之材料或其組合。 6·如請求項5之散熱器總成，其中該至少一耦接層包含鋅 或基於鋅之材料。 7. 如請求項5之散熱器總成，其中該至少一耦接層包含錫 或基於鎮之材料。 8. 如請求項1之散熱器總成，其中該至少一導熱層包含 錄、金、銦、鈀、銀、錫、鉍、釕或其組合。 9. 如請求項8之散熱器總成，其中该至少一導熱層包含 鎳。 1〇.如請求項1之散熱器總成，其進/步包含至少一額外 層0 139065.doc 200949185 11. 12. 13. 14. 15. 16. 17. 18. 19. 如請求項10之散熱器總成，其中該至少一額外層包含至 少一熱介面材料。 一種形成散熱器總成之方法，其包含： 提供一散熱器組件，其中該散熱器組件包含一上表 面、一下表面及至少一散熱器材料； 提供至少一耦接材料，其中該耦接材料係直接沈積至 該散熱器組件之下表面上；及200949185 VII. Patent application scope: A heat sink assembly comprising: a heat sink assembly, at least one coupling layer, and at least one heat conducting layer, wherein the heat sink assembly is coupled to the at least one handle layer via the at least one handle layer The at least one thermally conductive layer. 2_ Ο 3. The heat sink assembly of claim 1, wherein the heat sink assembly comprises a material that forms an oxide. The heat sink assembly of claim 2, wherein the oxide-forming material comprises aluminum. 4. The heat sink assembly of claim 1, wherein the heat sink assembly comprises an oxide layer, an oxidized barrier layer, or a combination thereof. 5. The heat sink assembly of claim 1, wherein the at least one coupling layer comprises a word, a zinc-based material, a tin, a tin-based material, or a combination thereof. 6. The heat sink assembly of claim 5, wherein the at least one coupling layer comprises zinc or a zinc-based material. 7. The heat sink assembly of claim 5, wherein the at least one coupling layer comprises tin or a town based material. 8. The heat sink assembly of claim 1, wherein the at least one thermally conductive layer comprises a recording, gold, indium, palladium, silver, tin, antimony, bismuth or a combination thereof. 9. The heat sink assembly of claim 8, wherein the at least one thermally conductive layer comprises nickel. 1. The heat sink assembly of claim 1 wherein the step/step comprises at least one additional layer 0 139065.doc 200949185 11. 12. 13. 14. 15. 16. 17. 18. 19. A heat sink assembly, wherein the at least one additional layer comprises at least one thermal interface material. A method of forming a heat sink assembly, comprising: providing a heat sink assembly, wherein the heat sink assembly includes an upper surface, a lower surface, and at least one heat sink material; providing at least one coupling material, wherein the coupling material is Direct deposition onto the lower surface of the heat sink assembly; and 在該散熱器組件之下表面之至少一部分上，沈積、塗 覆或塗佈至少一導熱塗層、膜或層。 如凊求項12之方法，進一步包含在沈積該至少一耦接材 料之前，清潔該散熱器組件。 如请求項12之方法，其中該散熱器組件包含原生氧化 層、氧化障壁層或其組合。 如請求項14之方法，進一步包含藉由蝕刻方法來移除該 原生氧化層、該氧化障壁層或該其組合。At least one thermally conductive coating, film or layer is deposited, coated or coated on at least a portion of the lower surface of the heat sink assembly. The method of claim 12, further comprising cleaning the heat sink assembly prior to depositing the at least one coupling material. The method of claim 12, wherein the heat sink assembly comprises a native oxide layer, an oxidative barrier layer, or a combination thereof. The method of claim 14, further comprising removing the native oxide layer, the oxidized barrier layer, or a combination thereof by an etching method. 如凊求項12之方法’其中該至少一導熱塗層、膜或層為 塗佈後經標記或處理之LASERe 5求項12之方法，進-步包含將至少-熱介面材 另一材料沈積、塗覆或塗佈至該散熱器組件或散熱 成之至少一表面之至少—部分上。 如:月求項12之方法’進—步包含將至少一額外組件 或塗覆至該散熱器組件或散熱器總成之至少一表面 少一部分上。 如請求項18之方法， 其中該至少一額外組件包含晶粒加 139065.doc • 2 - 200949185 熱器、散熱片或其組合。 20. —種散熱器總成，其包含： 一基於鋁之散熱器組件， 至少一耦接層，其中該耦接層包含鋅、基於鋅之材 料、錫、基於錫之材料或其組合，及 至少一導熱層，其包含鎳，其中該散熱器組件經由該 至少一柄接層耦接至該至少一導熱層。The method of claim 12, wherein the at least one thermally conductive coating, film or layer is a method of labeling or treating LASERe 5, Item 12, further comprising depositing at least another material of the thermal interface material Applying or coating to at least a portion of at least one surface of the heat sink assembly or heat sink. For example, the method of the monthly claim 12 includes the step of applying at least one additional component to a portion of at least one surface of the heat sink assembly or heat sink assembly. The method of claim 18, wherein the at least one additional component comprises a die plus a 139065.doc • 2 - 200949185 heater, a heat sink, or a combination thereof. 20. A heat sink assembly comprising: an aluminum-based heat sink assembly, at least one coupling layer, wherein the coupling layer comprises zinc, a zinc-based material, tin, a tin-based material, or a combination thereof, and At least one thermally conductive layer comprising nickel, wherein the heat sink assembly is coupled to the at least one thermally conductive layer via the at least one handle layer. 139065.doc139065.doc
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