200948218 六、發明說明： 【發明所屬之技術領域】 本發明，例如，係有關於在半導體元件、平面面板顯 示器（FPD )、太陽電池等之製造時而使用電漿來在處理 對象基板（基板）上形成膜之電漿成膜裝置者。 【先前技術】 作爲電漿處理裝置，例如，係週知有ECR電漿（電 子迴旋共振式電漿）CVD裝置、或是ICP電漿（感應性 耦合型電漿）裝置等。又，本申請人，係藉由專利文獻1 ，而在電漿CVD裝置中，提案有一種使對應於例如lmx lm左右之大面積基板上的成膜之電漿產生的天線陣列方 式之電漿源。 在專利文獻1中，係揭示有一種電漿產生用天線，其 係由將由表面被介電質所覆蓋之棒狀的導電體所成之複數 的天線元件，交互使供電方向成爲相反地而平行且平面狀 的作配置之陣列天線所成。藉由使用此種電漿產生用天線 ，電磁波之空間分布係爲均一，而能夠使高密度之電漿產 生，就算是在lmxlm左右之大面積的基板上，亦能夠進 行成膜。 以下，作爲電漿處理裝置，針對採用先前技術之天線 陣列方式的電漿CVD裝置作說明。 圖14，係爲展示先前技術之電漿CVD裝置的構成之 其中一例的槪略圖。於同圖中所示之電漿CVD裝置70， 200948218 係經由成膜容器（成膜處理室）12、和氣體供給部15、 以及排氣部17所構成。在成膜容器12之內部’係從上壁 側起朝向下壁側，而依序配設有：被開孔有特定口徑之複 數之孔的噴淋頭29、和由棒狀之複數之天線元件26所成 的天線陣列28、和內藏有加熱器30的基板平台32。成膜 容器12與噴淋頭29，係被接地。 噴淋頭29，係爲矩形之金屬製者，並在成膜容器12 之上壁與天線陣列28之間，與基板平台32平行地而被安 裝在成膜容器12之內壁面。複數之孔’沿著各個的天線 元件26之長度方向，而被形成在各個的天線兀件26之兩 側（圖中左右）的位置處。從氣體供給部15而被供給至 氣體擴散室47內之成膜氣體’係在氣體擴散室47內擴散 ，而後，經由被形成在噴淋頭29處之複數之孔，而被導 入（供給）至成膜室48內。 天線元件26，係如同圖15之從上方俯視的平面圖中 所示一般，爲將由高頻電力之波長的（2n+l) /4倍（η 爲0或是正整數）之長度的導電體所成的棒狀之單極天線 (天線本體）39收容在由介電質所成之圓筒構件40中所 成者。若是藉由高頻電力供給部34所產生之高頻電力經 由分配器36而被作分配並經由各個的阻抗整合器38而被 供給至各個的天線元件2 6處，則在天線元件2 6與接地之 間係產生放電’並在天線元件26之周圍使電漿產生。 各個的天線元件26，係如同本申請人在專利文獻1 中所提案者一般，在圖14中，以在與紙面垂直之方向上 -6 - 200948218 延伸的方式，而被安裝在被作了電性絕緣之成膜容器12 的側壁處。各個的天線元件2 6，例如，係以約5 0mm之 間隔而相互平行且相對於基板平台32之上面（基板42之 載置面）而平行地被作配設，其之配列方向，亦爲相對於 基板平台32之上面而爲平行。又，以使相鄰接之天線元 件26間的供電位置成爲相互對向之側壁的方式而被作配 設。 基板平台32，係爲較成膜容器12之內壁面更小之尺 寸的矩形之金屬板。基板平台32，係經由未圖示之支持 構件，而在成膜容器12內被作水平配設。 接著，針對電漿CVD裝置70之成膜時的動作作說明 〇 當在被載置於基板平台3 2上之基板42的表面形成例 如Si02膜（絕緣膜）的情況時，係藉由排氣部17，而經 由排氣孔25以及排氣管23來將成膜容器12內作真空抽 氣，並設成特定之壓力。又，從高頻電力供給部34而來 之高頻電力，係被供給至各個的天線元件26處，而在各 個的天線元件26之周圍輻射出電磁波。進而，藉由加熱 器30，基板平台32係被加熱至特定之溫度。 在此狀態下，作爲成膜氣體，係從氣體供給部1 5而 將氧氣以及TEOS (四乙氧基矽烷）氣體供給至成膜容器 12之氣體擴散室內。成膜氣體，係在氣體擴散室47內擴 散，並經由被形成在噴淋頭29處之複數之孔，而被導入 至成膜室48內。成膜氣體，係藉由各個的天線元件26而 200948218 被電離，並產生空間密度略均一之電漿。藉由此，在基板 42之表面上係被形成Si〇2膜。 如此這般，若是天線陣列方式之電漿CVD裝置，則 就算是Imxlm左右之大面積基板’亦由於能夠產生空間 密度爲略均一之電漿’因此’能夠在基板42上形成良質 且膜厚略均一之Si02膜。 [專利文獻1]日本特開2003-86581號公報 【發明內容】 [發明所欲解決之課題] 在使用有電漿CVD法之Si02膜的成膜中，所產生之 電漿的空間密度或是其之分布（均一性），係與被堆積在 基板上之Si02膜的膜質或膜厚之均一性有很深的相關， 此事係爲週知。藉由使用天線陣列方式之電漿源，能夠產 生大面積、高密度且均一之電漿。但是，從今後起，係會 更被要求有能夠產生更高密度且更爲均一之電漿並形成良 質且均一之膜的電漿處理裝置。 本發明之目的，係在於解決前述先前技術之問題點， 並提供一種：能夠產生相較於先前技術而更加高密度且均 一之電漿，並能夠使用此電漿而在基板上以良質來形成均 一之膜的電漿處理裝置。 [用以解決課題之手段] 爲了達成上述目的，本發明，係提供一種電漿處理裝 -8- 200948218 置，其係爲使用反應氣體來產生電漿，並使用此所產生之 電漿而在基板上形成膜之電漿處理裝置，其特徵爲，具備 有；成膜容器，係被供給有反應氣體；和基板平台，係被 配設在前述成膜容器內，並載置有前述基板；和天線陣列 ，係將以介電質而對導電體之天線本體作了被覆後的棒狀 之複數的天線元件作平行配列所構成，相鄰接之2根的天 線元件彼此，係存在有不相互接觸之間隔，且前述天線本 體之半徑a與前述相鄰接之2根的天線元件的中心間之間 隔r的比例，係爲r/aS 1 1 .6。 又，本發明，係提供一種電漿處理裝置，係爲使用反 應氣體來產生電槳，並使用此所產生之電漿而在基板上形 成膜之電漿處理裝置，其特徵爲，具備有；成膜容器，係 被供給有反應氣體；和基板平台，係被配設在前述成膜容 器內，並載置有前述基板；和天線陣列，係將以介電質而 對導電體之天線本體作了被覆後的棒狀之複數的天線元件 作平行配列所構成，相鄰接之2根的天線元件彼此，係存 在有不相互接觸之間隔，且前述相鄰接之2根的天線元件 的中心間之間隔r，係爲rS35mm。 又，本發明，係提供一種電漿處理裝置，係爲使用反 應氣體來產生電漿，並使用此所產生之電漿而在基板上形 成膜之電漿處理裝置，其特徵爲，具備有；成膜容器，係 被供給有反應氣體；和基板平台，係被配設在前述成膜容 器內，並載置有前述基板；和天線陣列，係將以介電質而 對導電體之天線本體作了被覆後的棒狀之複數的天線元件 -9- 200948218 作平行配列所構成，相鄰接之2根的天線元件的中心間之 間隔，係被設定爲在前述相鄰接之2根的天線元件間作放 電並產生電漿之間隔。 於此，較理想，該當電漿處理裝置，係爲一種：前述 基板平台係被水平地配設在前述成膜容器之下壁側處，且 前述天線陣列係被水平配設在前述成膜容器內之上壁側的 電漿CVD裝置，並具備有：噴淋頭，係被水平配設在前 述成膜容器之被供給有反應氣體的上壁以及前述天線陣列 之間，並被開孔有複數之孔。 [發明之效果] 在本發明中，係藉由使天線元件間並不相互接觸，且 以成爲r/a$ 1 1.6或是35mm的方式來將天線元件作配 列，而在相鄰接之2根的天線元件間作放電並產生電漿。 此電漿，係具有在先前技術中所沒有的特徵，並爲非常高 密度且均一性亦爲良好之電漿。故而，若藉由本發明，則 藉由以天線間之放電所產生之電漿，能夠得到相較於先前 技術而膜質與膜厚均一性更爲良好之膜。 【實施方式】 以下，根據在所添附之圖面中所展示的合適實施型態 ，來對本發明乏電漿處理裝置作詳細說明。 圖1，係爲對本發明之電漿處理裝置的構成作展示之 其中一種實施型態的槪略圖。同圖中所示之電漿處理裝置 -10- 200948218 ，係適用電漿CVD法，並使用成膜氣體（反應氣體）來 產生電漿，而在處理對象基板（基板）上形成薄膜之電漿 CVD裝置10。電漿CVD裝置10，係經由成膜容器12、 和氣體供給部15、以及真空幫浦等之排氣部17而構成。 氣體供給部1 5，係經由供給管1 9，而被連接於被形 成在成膜容器12的上壁處之供給孔21。氣體供給部15, 係經由供給管1 9以及供給孔21，而在氣體擴散室47內 φ ’於垂直方向上供給例如氧氣以及TEOS氣體等之成膜氣 體。 另一方面，排氣部17，係經由排氣管23，而被連接 於被形成在成膜容器12之下壁處之排氣孔25。排氣部17 ’係經由排氣孔25以及排氣管23，而將被供給至成膜室 48內之成膜氣體在垂直方向上作排氣。 圖示雖係省略，但是，在供給管19之途中，係被設 置有對氣體供給部15與氣體擴散室47間之導通作控制的 φ 開閉閥（例如電磁閥），在排氣管23之途中，係被設置 有對排氣部1 7與成膜室48間之導通作控制的開閉閥。當 從氣體供給部15而對成膜容器12之成膜室48內供給氣 體的情況時，供給管1 9之開閉閥係被開放，並將被供給 至成膜室48內之氣體作排氣。 成膜容器12，係爲金屬製之中空箱形者。在成膜容 器12之內部，係從上壁側起朝向下壁側而依序被配設有 :被開孔了特定口徑的複數之孔的噴淋頭29、和由棒狀 之複數之天線元件26所成之天線陣列28、和內藏有加熱 -11 - 200948218 器30之基板平台32。成膜容器12與噴淋頭29係被接地 。成膜容器12之內部空間，係被分離成較噴淋頭29爲更 上側之氣體擴散室47、和下側之成膜室48。 噴淋頭29，例如，係爲被開孔有特定口徑的複數之 孔的矩形之金屬板。如圖1中所示一般，噴淋頭29，係 在成膜容器12之上壁與天線陣列28之間，與基板平台 32平行地，而被安裝在成膜容器12之內壁面處。被形成 於噴淋頭29處的複數之孔，係在複數之天線元件26的各 0 個之兩側（圖中左右）的位置處間歇地而沿著複數之天線 元件26的各個之長度方向（圖1中之垂直於紙面的方向 )來設置。 從氣體供給部15而被供給至氣體擴散室47內之成膜 氣體，係在氣體擴散室47內擴散，而後，經由被形成於 噴淋頭29處的複數之孔，而被導入（供給）至成膜室48 內。200948218 VI. [Technical Field] The present invention relates to, for example, the use of plasma for processing a target substrate (substrate) in the manufacture of a semiconductor element, a flat panel display (FPD), a solar cell, or the like. A plasma film forming apparatus on which a film is formed. [Prior Art] As the plasma processing apparatus, for example, an ECR plasma (electron cyclotron resonance plasma) CVD apparatus or an ICP plasma (inductively coupled plasma) apparatus or the like is known. Further, the present applicant is based on Patent Document 1, and in the plasma CVD apparatus, there is proposed an antenna array type plasma which generates plasma corresponding to a film formed on a large-area substrate of, for example, about lmx lm. source. Patent Document 1 discloses an antenna for generating a plasma, which is composed of a plurality of antenna elements formed by a rod-shaped conductor covered with a dielectric on a surface, and alternately supplies the power supply directions to be opposite and parallel. And a planar array antenna is configured. By using such a plasma generating antenna, the spatial distribution of electromagnetic waves is uniform, and high-density plasma can be produced, and film formation can be performed even on a large-area substrate of about lmxlm. Hereinafter, a plasma CVD apparatus using the antenna array method of the prior art will be described as a plasma processing apparatus. Fig. 14 is a schematic view showing an example of the constitution of a prior art plasma CVD apparatus. The plasma CVD apparatus 70, 200948218 shown in the same figure is constituted by a film formation container (film formation processing chamber) 12, a gas supply unit 15, and an exhaust unit 17. The inside of the film forming container 12 is disposed from the upper wall side toward the lower wall side, and is sequentially provided with a shower head 29 having a plurality of holes having a specific aperture, and a plurality of antennas having a rod shape The antenna array 28 formed by the element 26 and the substrate stage 32 in which the heater 30 is housed. The film forming container 12 and the shower head 29 are grounded. The shower head 29 is made of a rectangular metal and is mounted on the inner wall surface of the film formation container 12 between the upper wall of the film formation container 12 and the antenna array 28 in parallel with the substrate stage 32. A plurality of holes ' are formed along the longitudinal direction of each of the antenna elements 26 at positions on both sides (left and right in the drawing) of the respective antenna elements 26. The film forming gas ' supplied into the gas diffusion chamber 47 from the gas supply unit 15 is diffused in the gas diffusion chamber 47, and then introduced (supplied) through a plurality of holes formed in the shower head 29. It is inside the film forming chamber 48. The antenna element 26 is generally formed of a conductor having a length of (2n + 1) / 4 times (η is 0 or a positive integer) of a wavelength of high-frequency power as shown in a plan view from above in Fig. 15 . The rod-shaped monopole antenna (antenna body) 39 is housed in a cylindrical member 40 made of a dielectric material. If the high-frequency power generated by the high-frequency power supply unit 34 is distributed via the distributor 36 and supplied to each of the antenna elements 26 via the respective impedance integrators 38, the antenna elements 26 and A discharge is generated between the grounds and plasma is generated around the antenna element 26. Each of the antenna elements 26 is as conventionally proposed by the applicant in Patent Document 1, and in Fig. 14, it is mounted in a manner of extending in a direction perpendicular to the plane of the paper -6 - 200948218. The side wall of the film forming container 12 is insulated. The antenna elements 26 are arranged parallel to each other at intervals of about 50 mm and in parallel with respect to the upper surface of the substrate stage 32 (the mounting surface of the substrate 42), and the arrangement direction thereof is also It is parallel with respect to the upper surface of the substrate platform 32. Further, the power supply positions between the adjacent antenna elements 26 are arranged to face each other. The substrate stage 32 is a rectangular metal plate having a smaller size than the inner wall surface of the film forming container 12. The substrate stage 32 is horizontally disposed in the film formation container 12 via a support member (not shown). Next, the operation at the time of film formation of the plasma CVD apparatus 70 will be described as a case where, for example, a SiO 2 film (insulating film) is formed on the surface of the substrate 42 placed on the substrate stage 3 2 In the portion 17, the inside of the film formation container 12 is evacuated via the vent hole 25 and the exhaust pipe 23, and is set to a specific pressure. Further, the high-frequency power from the high-frequency power supply unit 34 is supplied to each of the antenna elements 26, and electromagnetic waves are radiated around the respective antenna elements 26. Further, by the heater 30, the substrate stage 32 is heated to a specific temperature. In this state, oxygen gas and TEOS (tetraethoxysilane) gas are supplied from the gas supply unit 15 to the gas diffusion chamber of the film formation container 12 as a film formation gas. The film forming gas is diffused in the gas diffusion chamber 47, and introduced into the film forming chamber 48 through a plurality of holes formed in the shower head 29. The film forming gas is ionized by the respective antenna elements 26 and 200948218, and a plasma having a slightly uniform spatial density is produced. Thereby, a Si〇2 film is formed on the surface of the substrate 42. In this way, in the case of the plasma CVD apparatus of the antenna array type, even a large-area substrate of about Imxlm can generate a plasma having a relatively uniform spatial density, so that a good quality can be formed on the substrate 42 and the film thickness can be slightly Uniform SiO 2 film. [Problem to be Solved by the Invention] In the film formation of a SiO 2 film using a plasma CVD method, the spatial density of the plasma generated is either The distribution (homogeneity) is closely related to the uniformity of the film quality or film thickness of the SiO 2 film deposited on the substrate, and this is well known. By using an antenna array-type plasma source, it is possible to produce a large-area, high-density, and uniform plasma. However, from now on, plasma processing equipment capable of producing a higher density and more uniform plasma and forming a good and uniform film will be required. The object of the present invention is to solve the problems of the prior art mentioned above, and to provide a plasma which is capable of producing a higher density and uniformity than the prior art, and which can be formed on the substrate by using the plasma. A plasma processing device for uniform membranes. [Means for Solving the Problems] In order to achieve the above object, the present invention provides a plasma processing apparatus-8-200948218 which uses a reaction gas to generate a plasma and uses the plasma generated thereby. a plasma processing apparatus for forming a film on a substrate, characterized in that: a film forming container is supplied with a reaction gas; and a substrate platform is disposed in the film forming container, and the substrate is placed thereon; And the antenna array is configured by parallel-arranging a plurality of rod-shaped antenna elements covered with an antenna body of a conductor by dielectric material, and two antenna elements adjacent to each other are present. The ratio of mutual contact, and the ratio of the radius a of the antenna body to the interval r between the centers of the two adjacent antenna elements is r/aS 1 1.6. Moreover, the present invention provides a plasma processing apparatus which is a plasma processing apparatus which uses a reactive gas to generate an electric paddle and forms a film on the substrate using the plasma generated thereby, and is characterized in that it is provided; a film forming container is supplied with a reaction gas; a substrate platform is disposed in the film forming container, and the substrate is placed thereon; and the antenna array is an antenna body that is electrically conductive to the conductor body The antenna elements of the plurality of rods after the coating are arranged in parallel, and the two adjacent antenna elements are spaced apart from each other, and the two antenna elements adjacent to each other are arranged. The interval r between the centers is rS35mm. Moreover, the present invention provides a plasma processing apparatus which is a plasma processing apparatus which uses a reaction gas to generate a plasma and forms a film on a substrate using the plasma generated thereby, and is characterized in that it is provided; a film forming container is supplied with a reaction gas; a substrate platform is disposed in the film forming container, and the substrate is placed thereon; and the antenna array is an antenna body that is electrically conductive to the conductor body The antenna element -9-200948218 having a plurality of rod-shaped strips is formed as a parallel arrangement, and the interval between the centers of the two adjacent antenna elements is set to be two adjacent ones. Discharge between the antenna elements and create a plasma interval. Preferably, the plasma processing apparatus is one in which the substrate platform is horizontally disposed on the lower wall side of the film forming container, and the antenna array is horizontally disposed in the film forming container. The plasma CVD apparatus on the inner wall side is provided with a shower head which is horizontally disposed between the upper wall of the film formation container to which the reaction gas is supplied and the antenna array, and is opened Multiple holes. [Effects of the Invention] In the present invention, the antenna elements are arranged such that the antenna elements do not contact each other and are r/a$1 1.6 or 35 mm, and are adjacent to each other. The antenna elements of the root are discharged and plasma is generated. This plasma has characteristics not found in the prior art and is a plasma of very high density and uniformity. Therefore, according to the present invention, a film which is more excellent in film quality and film thickness than the prior art can be obtained by the plasma generated by the discharge between the antennas. [Embodiment] Hereinafter, the spent plasma processing apparatus of the present invention will be described in detail based on a suitable embodiment shown in the attached drawings. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic view showing one embodiment of a configuration of a plasma processing apparatus of the present invention. The plasma processing apparatus 10-200948218 shown in the same figure is a plasma CVD method, and uses a film forming gas (reaction gas) to generate plasma, and a plasma film is formed on a substrate (substrate) to be processed. CVD apparatus 10. The plasma CVD apparatus 10 is configured by a film forming container 12, a gas supply unit 15, and an exhaust unit 17 such as a vacuum pump. The gas supply unit 15 is connected to the supply hole 21 formed in the upper wall of the film formation container 12 via the supply tube 19. The gas supply unit 15 supplies a film forming gas such as oxygen gas or TEOS gas in the vertical direction in the gas diffusion chamber 47 through the supply pipe 19 and the supply hole 21 in the gas diffusion chamber 47. On the other hand, the exhaust portion 17 is connected to the exhaust hole 25 formed at the lower wall of the film forming container 12 via the exhaust pipe 23. The exhaust portion 17' passes through the exhaust hole 25 and the exhaust pipe 23, and the film forming gas supplied into the film forming chamber 48 is exhausted in the vertical direction. Although not shown in the drawings, a φ on-off valve (for example, a solenoid valve) that controls the conduction between the gas supply unit 15 and the gas diffusion chamber 47 is provided in the middle of the supply pipe 19, and the exhaust pipe 23 is provided. In the middle, an on-off valve that controls the conduction between the exhaust unit 17 and the film forming chamber 48 is provided. When gas is supplied into the film forming chamber 48 of the film forming container 12 from the gas supply unit 15, the opening and closing valve of the supply pipe 19 is opened, and the gas supplied into the film forming chamber 48 is exhausted. . The film formation container 12 is a hollow box shape made of metal. In the inside of the film formation container 12, a shower head 29 in which a plurality of holes having a specific aperture are opened, and a plurality of antennas in a rod shape are sequentially disposed from the upper wall side toward the lower wall side. The antenna array 28 formed by the component 26 and the substrate platform 32 having the heater -11 - 200948218 are incorporated. The film forming container 12 and the shower head 29 are grounded. The internal space of the film formation container 12 is separated into a gas diffusion chamber 47 which is higher than the shower head 29, and a film formation chamber 48 on the lower side. The shower head 29 is, for example, a rectangular metal plate which is bored with a plurality of holes of a specific diameter. As shown in Fig. 1, in general, the shower head 29 is disposed between the upper wall of the film forming container 12 and the antenna array 28, in parallel with the substrate stage 32, and is mounted at the inner wall surface of the film forming container 12. The plurality of holes formed at the shower head 29 are intermittently along the respective lengths of the plurality of antenna elements 26 at positions on the respective sides (left and right) of the plurality of antenna elements 26. (The direction perpendicular to the paper surface in Fig. 1) is set. The film forming gas supplied into the gas diffusion chamber 47 from the gas supply unit 15 is diffused in the gas diffusion chamber 47, and then introduced (supplied) through a plurality of holes formed in the shower head 29. It is inside the film forming chamber 48.
天線陣列28，係爲使用成膜氣體而產生電漿者，圖1 Q 中，在成膜容器12的左右側壁之間，且在噴淋頭29與基 板平台32之間，複數之天線元件26的配列方向，係以成 爲相對於基板平台32之上面（基板42之載置面）而平行 的方式來作配設。各個的天線元件26，係被配置在與基 板平台32之上面相平行的方向上，並以不會位在被形成 於噴淋頭29處的複數之孔的正下方之方式，來在圖1中 朝向成膜容器12的左右方向而偏移設置。 如圖2中之從上方視之的平面圖中所示一般，藉由高 -12- 200948218 頻電力供給部34所產生之VHF帶（例如，80MHz )之高 頻電力（高頻電流），係藉由分配器36而被分配，並經 由阻抗整合器38而被供給至各個的天線元件26處。阻抗 整合器38，係與高頻電源供給部34所產生之高頻電力的 頻率之調整而一同被使用，並對於在電漿的產生中之經由 天線元件26之負載的變化所產生的阻抗之不整合作修正 〇 天線元件26，例如，係爲將由銅、鋁、白金等之導 電體所成的棒狀之單極天線（天線本體）39，收容在例如 由石英或是陶瓷等之介電質所成的圓筒構件40中，而被 構成。藉由將天線本體39以介電質來作覆蓋，作爲天線 之電容與阻抗係被作調整，而能夠沿著其之長度方向來將 高頻電力有效率地作傳播，並從天線元件26來將電磁波 有效率地輻射至周圍。 各個的天線元件26，在圖1中，係以在垂直於紙面 之方向上延伸的方式，而被作電性絕緣並被安裝在成膜容 器1 2的側壁處。又，各個的天線元件26，係使其中心間 之距離成爲特定之間隔、例如約20mm之間隔而被平行配 設，而以使相鄰接之天線元件26間的給電位置相互成爲 相對向之側壁處的方式（使給電方向成爲相互逆向的方式 )而被配設。藉由此，電磁波係涵蓋複數之天線元件26 之配列方向而均一地被形成。 天線元件26之長度方向的電場強度，係在高頻電力 之供給端成爲〇，並在前端部（供給端之相反端）處成爲 -13- 200948218 最大。故而’以使相鄰接之天線元件26間的給電位置成 爲相互對向之側壁的方式來作配設，並在各個的天線元件 26處，藉由相互從相反方向來供給高頻電力，而將從各 個的天線元件26所輻射之電磁波合成並形成均一之電漿 ，而能夠形成膜厚爲均一之膜。 天線元件26，係爲本申請人在專利文獻1中所提案 者。例如，天線本體39之直徑係爲約6mm，而圓筒構件 40之直徑係爲約12mm。當成膜室12內之壓力係爲20Pa 左右的情況時，若是從高頻電力供給部34而供給約 1 500W之高頻電力，則當天線元件26之天線長度係成爲 高頻電力之波長的（2n+l) /4倍（η係爲0又或是正整 數）的情況時，係產生駐波並共振，並在天線元件26之 周圍產生電漿。 基板平台32，係爲較成膜容器12之內壁面更小的尺 寸的例如矩形之金屬板。基板平台3 2，係經由未圖示之 支持構件，而被水平配設在成膜容器12內。 電漿CVD裝置10之成膜時的動作，由於係與圖14 中所示之先前技術的電漿CVD裝置70之情況爲相同，因 此，係省略重複之說明。 於此，電漿CVD裝置10之特徵部分，係在於相鄰接 之2根的天線元件26之中心間的間隔（天線間隔）。天 線間隔，在圖14以及圖15所示之先前技術的電漿CVD 裝置70中，係爲約50mm，但是，在本實施形態之電漿 CVD裝置10中，係如前述一般，而爲約20mm。因此， -14- 200948218 若是同一面積，則相較於電漿CVD裝置70，電漿CVD裝 置1〇之天線元件26的根數係爲較多。 在先前技術之電漿CVD裝置70中，於成膜時，當對 各個的天線元件26而供給高頻電力時，天線間隔，係被 設定爲在各個的天線元件26與接地之間而放電並產生電 漿之間隔，例如係被設定爲約5 0mm。於此情況，放電， 係不會在相鄰接之2根的天線元件26之間產生，而會在 0 各個的天線元件26與接地（被作了接地之成膜容器12乃 至噴淋頭29)之間而產生。 另一方面，在本實施形態之電漿CVD裝置10中，於 成膜時，當對各個的天線元件26而供給高頻電力時，天 線間隔，係被設定爲在相鄰接之2根的天線元件26之間 而放電並產生電漿之間隔，例如係被設定爲約20mm。於 此情況，放電主要係在相鄰接之2根的天線元件26之間 產生。當然，在各個的天線元件26與接地之間，亦多少 ⑩ 會產生有放電。 在天線元件26之間作放電並產生電漿的間隔，係依 存於天線元件26之構成或是成膜條件（處理條件）等之 處理參數而改變。處理參數，例如，係爲天線本體39之 天線半徑（例如，1〜6mm )以及天線長度（例如，3 84〜 93 1mm )、圓筒構件40之厚度（例如，1〜3mm )、被供 給至天線元件26處之高頻電力的功率（例如，每一根4 〜3 75W )、頻率（例如，50〜3 90MHz )以及相位（同相 乃至逆相）、成膜氣體種類（反應氣體種類，氧化乃至氮 -15- 200948218 化氣體、惰性氣體等）、以及壓力（例如，5〜200Pa)。 於此，在上述處理參數之範圍中，詳細雖係於後述， 但是，天線間隔之上限係設爲約35mm。若是將天線本體 39之半徑設爲a，將相鄰接之2根的天線元件26之中心 間的間隔設爲r，並將天線間隔之上限以兩者之比例r/a 來表現，則係成爲r/a=約1 1 .6。另一方面，天線間隔之 下限，係設爲使相鄰接之2根的天線元件26彼此不會相 接觸之間隔。處理參數，係只要天線間隔成爲該上限與下 限之範圍內，則能夠適宜地自由作決定。 以下，列舉出如圖1 1中所示一般之使用天線本體39 之半徑a= 3mm之天線元件26，並將天線間隔r設定爲 20mm、40mm、60mm，而進行了實驗的情況時之結果的 例子，並繼續進行說明。 在本實施形態之電漿CVD裝置10中，作爲上述處理 參數，當設爲天線本體39之天線半徑=3 mm;天線長·度 =384mm;圓筒構件40之厚度=2.5mm;被供給至天線元 件26處之高頻電力的功率=160W;頻率=130MHz ;相 位=同相；成膜氣體種類=氬氣氣體、氮化氣體、 TE0S/02氣體；以及壓力=20Pa，並將天線間隔設定爲 20mm、40mm、60mm，而使電獎產生的情況時，係得知 了 ：僅有當天線間隔爲2 0mm的情況時，會在相鄰接之2 根的天線元件26之間放電。亦即是’係得知了 ：當天線 間隔爲40mm、60mm (40mm)以上的情況時’貝！J只會在 天線元件26與接地之間作放電。 -16- 200948218 圖3〜圖5，係分別展示有將天線間隔設定爲20mm 、40mm、60mm的情況時之天線元件週邊的發光（電漿所 致之發光）的模樣。由此些之圖，可以得知，依據天線間 隔，係成爲60mm時之値<40mm時之値<20mm時之値 的關係，而電漿所致之發光強度係變強。當20mm時，發 光強度係顯著的爲強，而能夠在視覺上確認到相鄰接之2 根的天線元件26之間係產生放電。 以下，參考圖6〜圖10，對於天線間隔、和電漿發光 強度（相鄰接之2根的天線元件2 6間之中央的平均）、 和電漿密度、和離子電流分布之不均一性、和絕緣膜之實 效電荷密度、以及絕緣耐壓間之關係作說明。在此些之圖 表中’橫軸係爲天線間隔（m m )，縱軸係分別爲電漿發 光強度（任意單位）、電發密度（cm — 3)、離子電流分布 之不均一性（± % )、實效電荷密度（cm·2 )、絕緣膜之 絕緣耐壓（MV/cm )。 於此，電槳發光強度’係藉由干涉濾波器來對於Ar 原子之發光（波長750.4 nm)作波長選擇，並藉由冷卻 CCD ( Charge Coupled Device :固體攝像元件）攝像機而 檢測出來。又’電漿密度’係藉由電漿吸收探針來作計測 ，離子電流分布之不均一性’係藉由朗繆耳探針來作計測 ，而絕緣膜之實效電荷密度以及絕緣耐壓，係藉由水銀探 針來作計測。 圖6’係爲展不天線間隔與電续發光強度（中央平均 )之關係的圖表。此圖表’係設爲高頻電力= 16〇W、成 -17- 200948218 膜容器12內之壓力= 2 0Pa，而產生氬電漿，並對Arl( 氬原子，波長= 750.4nm)之亮線（bright line)作了觀測 之結果。電漿發光強度，係如同在圖3〜圖5中而作了視 覺性確認一般，係成爲60mm時之値< 40mm時之値< 2 0ram時之値的關係，而能夠得知，隨著天線間隔變得狹 窄，電漿發光強度係變高。如同圖中之點線所示一般，相 較於將天線間隔爲 40mm的情況時之電漿發光強度與 60mm的情況時之電漿發光強度作了連結之直線的延長線 上的電漿發光強度，天線間隔爲2 0mm的情況時之電漿發 光強度係成爲特別的高。 圖7，係爲展示天線間隔與電漿密度之關係的圖表。 此圖表，係爲在與圖6相同之條件下所產生之氩電漿的結 果。電槳密度，係成爲60mm時之値<40mm時之値< 2 0mm時之値的關係，而能夠得知，隨著天線間隔變得狹 窄，電漿密度係變高。相較於天線間隔爲40mm與60mm 的情況時之電槳密度，天線間隔爲2 0 m m的情況時（在天 線間作放電的情況時）之電漿密度係成爲特別的高 圖8，係爲展示天線間隔與離子電流分布之不均一性 之關係的圖表。此圖表，係爲在與圖6相同之條件下所產 生之氮電漿的結果。離子電流分布之不均一度，係成爲 20mm時之値<40mm時之値<60mm時之値的關係。離子 電流分布，係爲成爲用以對電漿分布（均一性）作確認之 其中一個的指標者，但是，此係亦隨著天線間隔變爲狹窄 而使不均一性變少。可以得知，當天線間隔爲20mm的情 200948218 況時，係成爲最爲均一。 圖9，係爲展示天線間隔與絕緣膜之實效電荷密度之 關係的圖表。此圖表，係在與圖6相同之條件下，將天線 陣列28與基板42之間的距離設爲=25mm，並作爲成膜 氣體而使用TE0S/02氣體=l〇/200sccm’而成膜了 Si02 絕緣膜後之結果。所成膜了的Si02絕緣膜之實效電荷密 度，係成爲20mm時之値<40mm時之値< 60mm時之値 ^ 的關係，而能夠得知，隨著天線間隔變得狹窄，絕緣膜之 〇 實效電荷密度係變少。可以得知，當天線間隔爲20mm的 情況時，係成爲最少，而能夠得到良質之絕緣膜。 於此，圖12，係爲展示電漿密度與絕緣膜之實效電 荷密度之關係的圖表。此圖表之橫軸，係爲電漿密度（ cm'3 )，縱軸係爲實效電荷密度（crrT2 )。可以得知，絕 緣膜之實效電荷密度，在電漿密度超過約7.〇xl〇9cm_3的 範圍處，係變得充分少。由此事，可以得知，在電漿密度 φ 超過約7.〇xl〇9cnT3的範圍處，於相鄰接之天線間係產生 放電，因此，絕緣膜之實效電荷密度係變少》 圖1 〇，係爲展示天線間隔與絕緣膜之絕緣耐壓之關 係的圖表。此圖表，係爲在與圖9相同之條件下而成膜了 8102絕緣膜後的結果。所成膜了的Si02絕緣膜之絕緣耐 壓，係成爲60mm時之値< 20mm時之値< 40mm時之値 的關係。雖然成爲20mm時之値< 40mm時之値，但是此 差異係爲測定誤差，而可將兩者考慮爲同等之値。當天線 間隔爲2〇mm的情況時，絕緣耐壓係成爲充分的高，而可 -19- 200948218 以得知’作爲絕緣膜係形成了良質之膜。 於此’圖13’係爲展示電漿密度與絕緣膜之絕緣耐 壓之關係的圖表。此圖表之橫軸，係爲電漿密度（)The antenna array 28 is a plasma generated by using a film forming gas. In FIG. 1Q, between the left and right side walls of the film forming container 12, and between the shower head 29 and the substrate platform 32, a plurality of antenna elements 26 are provided. The arrangement direction is arranged so as to be parallel to the upper surface of the substrate stage 32 (the mounting surface of the substrate 42). Each of the antenna elements 26 is disposed in a direction parallel to the upper surface of the substrate stage 32, and is not positioned directly below the plurality of holes formed at the shower head 29, in FIG. The middle portion is offset from the left-right direction of the film forming container 12. As shown in the plan view from the top in FIG. 2, generally, the high frequency power (high frequency current) of the VHF band (for example, 80 MHz) generated by the high power supply unit 34 of the high-12-200948218 is used. It is distributed by the distributor 36 and supplied to the respective antenna elements 26 via the impedance integrator 38. The impedance integrator 38 is used together with the adjustment of the frequency of the high-frequency power generated by the high-frequency power supply unit 34, and the impedance generated by the change of the load via the antenna element 26 in the generation of the plasma. The defective antenna element 26 is modified by, for example, a rod-shaped monopole antenna (antenna body) 39 made of a conductor such as copper, aluminum or platinum, and is housed in a dielectric such as quartz or ceramic. The formed cylindrical member 40 is configured. By covering the antenna body 39 with a dielectric material, the capacitance and impedance of the antenna are adjusted, and the high-frequency power can be efficiently propagated along the longitudinal direction thereof, and the antenna element 26 is efficiently transmitted. Electromagnetic waves are efficiently radiated to the surroundings. The respective antenna elements 26, in Fig. 1, are electrically insulated and mounted at the side walls of the film forming container 12 in such a manner as to extend in a direction perpendicular to the plane of the paper. Further, each of the antenna elements 26 is arranged in parallel at a predetermined interval, for example, at intervals of about 20 mm, so that the power feeding positions between the adjacent antenna elements 26 are opposed to each other. The manner of the side walls (the way in which the power supply directions are reversed to each other) is arranged. Thereby, the electromagnetic wave system is uniformly formed by covering the arrangement direction of the plurality of antenna elements 26. The electric field intensity in the longitudinal direction of the antenna element 26 is 〇 at the supply end of the high-frequency power, and is -13-200948218 at the tip end portion (the opposite end of the supply end). Therefore, 'the power supply positions between the adjacent antenna elements 26 are arranged to face each other, and the high frequency power is supplied from the opposite direction to each of the antenna elements 26. The electromagnetic waves radiated from the respective antenna elements 26 are combined to form a uniform plasma, and a film having a uniform film thickness can be formed. The antenna element 26 is proposed by the applicant in Patent Document 1. For example, the diameter of the antenna body 39 is about 6 mm, and the diameter of the cylindrical member 40 is about 12 mm. When the pressure in the film forming chamber 12 is about 20 Pa, when the high-frequency power is supplied from the high-frequency power supply unit 34 to about 1500 W, the antenna length of the antenna element 26 becomes the wavelength of the high-frequency power ( In the case of 2n + 1) / 4 times (η is 0 or a positive integer), standing waves are generated and resonated, and plasma is generated around the antenna element 26. The substrate stage 32 is a rectangular metal plate of a size smaller than the inner wall surface of the film forming container 12. The substrate stage 3 2 is horizontally disposed in the film formation container 12 via a support member (not shown). The operation at the time of film formation of the plasma CVD apparatus 10 is the same as that of the prior art plasma CVD apparatus 70 shown in Fig. 14, and therefore, the overlapping description will be omitted. Here, the characteristic portion of the plasma CVD apparatus 10 is the interval (antenna spacing) between the centers of the two antenna elements 26 adjacent to each other. The antenna spacing is about 50 mm in the prior art plasma CVD apparatus 70 shown in Figs. 14 and 15, but in the plasma CVD apparatus 10 of the present embodiment, it is about 20 mm as described above. . Therefore, if -14-200948218 is the same area, the number of antenna elements 26 of the plasma CVD apparatus 1 is larger than that of the plasma CVD apparatus 70. In the plasma CVD apparatus 70 of the prior art, when high frequency power is supplied to each of the antenna elements 26 at the time of film formation, the antenna spacing is set to be discharged between the respective antenna elements 26 and the ground. The interval at which the plasma is generated is, for example, set to about 50 mm. In this case, the discharge will not occur between the two adjacent antenna elements 26, but will be at 0 each of the antenna elements 26 and ground (the grounded film forming container 12 or even the shower head 29) Between). On the other hand, in the plasma CVD apparatus 10 of the present embodiment, when high-frequency power is supplied to each of the antenna elements 26 at the time of film formation, the antenna spacing is set to be two adjacent ones. The spacing between the antenna elements 26 and the discharge of the plasma, for example, is set to about 20 mm. In this case, the discharge is mainly generated between two adjacent antenna elements 26. Of course, between the respective antenna elements 26 and the ground, there are also 10 discharges. The interval at which the discharge is generated between the antenna elements 26 and the plasma is generated varies depending on the configuration of the antenna element 26 or the processing parameters of the film formation conditions (processing conditions). The processing parameters are, for example, the antenna radius (for example, 1 to 6 mm) of the antenna body 39 and the antenna length (for example, 3 84 to 93 1 mm), and the thickness of the cylindrical member 40 (for example, 1 to 3 mm), which are supplied to The power of the high-frequency power at the antenna element 26 (for example, 4 to 3 75 W each), the frequency (for example, 50 to 3 90 MHz), and the phase (in-phase or even reverse phase), the type of film forming gas (reaction gas species, oxidation) Even nitrogen-15-200948218 chemical gas, inert gas, etc.), and pressure (for example, 5 to 200 Pa). Here, in the range of the above-described processing parameters, although the details are described later, the upper limit of the antenna interval is set to be about 35 mm. If the radius of the antenna main body 39 is a, the interval between the centers of the two adjacent antenna elements 26 is r, and the upper limit of the antenna spacing is expressed by the ratio r/a of the two. Become r/a = about 1 1.6. On the other hand, the lower limit of the antenna spacing is an interval at which the adjacent antenna elements 26 are not in contact with each other. The processing parameters can be appropriately determined as long as the antenna interval is within the upper limit and the lower limit. Hereinafter, as shown in FIG. 11, the antenna element 26 having the radius a = 3 mm of the antenna main body 39 is used, and the antenna interval r is set to 20 mm, 40 mm, and 60 mm, and the result of the experiment is performed. Examples and continue with the instructions. In the plasma CVD apparatus 10 of the present embodiment, as the processing parameters, the antenna radius of the antenna main body 39 is set to 3 mm; the antenna length is 384 mm; the thickness of the cylindrical member 40 is 2.5 mm; The power of the high frequency power at the antenna element 26 = 160 W; frequency = 130 MHz; phase = in phase; film forming gas type = argon gas, nitriding gas, TEOS gas; and pressure = 20 Pa, and the antenna spacing is set to 20mm, 40mm, 60mm, and when the electric prize is generated, it is known that only when the antenna spacing is 20 mm, it will be discharged between two adjacent antenna elements 26. That is, the system has learned that when the antenna spacing is 40mm or 60mm (40mm) or more, the shell is! J will only discharge between antenna element 26 and ground. -16- 200948218 Fig. 3 to Fig. 5 show the appearance of light emission (light emission by plasma) in the vicinity of the antenna element when the antenna spacing is set to 20 mm, 40 mm, or 60 mm, respectively. From these graphs, it can be seen that the relationship between the radiant and the 40 40 40 40 40 40 40 40 40 20 20 20 20 20 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 When the thickness is 20 mm, the light-emitting intensity is remarkably strong, and it is visually confirmed that discharge occurs between the two adjacent antenna elements 26. Hereinafter, with reference to FIG. 6 to FIG. 10, the antenna spacing and the plasma luminous intensity (the average of the centers between the two adjacent antenna elements 26), and the plasma density and the ion current distribution are inhomogeneous. The relationship between the effective charge density of the insulating film and the withstand voltage of the insulating film will be described. In these graphs, the 'horizontal axis is the antenna spacing (mm), and the vertical axis is the plasma luminous intensity (arbitrary unit), the electric hair density (cm-3), and the ion current distribution heterogeneity (±%). ), effective charge density (cm·2 ), insulation withstand voltage (MV/cm) of the insulating film. Here, the electric blade luminous intensity is selected by the interference filter for the light emission (wavelength: 750.4 nm) of the Ar atom, and is detected by cooling a CCD (Charge Coupled Device) camera. The 'plasma density' is measured by the plasma absorption probe, and the heterogeneity of the ion current distribution is measured by the Langer ear probe, and the effective charge density and insulation withstand voltage of the insulating film are The measurement is performed by a mercury probe. Fig. 6' is a graph showing the relationship between the antenna spacing and the electrical continuous illumination intensity (central average). This chart is set to high frequency power = 16 〇 W, -17 - 200948218 pressure in the membrane container 12 = 20 Pa, and argon plasma is generated, and a bright line of Arl (argon atom, wavelength = 750.4 nm) (bright line) The result of the observation. The luminescence intensity of the plasma is visually confirmed as shown in Fig. 3 to Fig. 5, and is a relationship between 値 < 40 mm 60 < 2 0 ram at 60 mm, and it can be known that The antenna spacing becomes narrow and the plasma luminous intensity becomes high. As shown by the dotted line in the figure, the plasma luminous intensity of the extended line on the straight line connecting the plasma luminous intensity when the antenna is separated by 40 mm and the plasma luminous intensity in the case of 60 mm is generally When the antenna spacing is 20 mm, the plasma luminous intensity is particularly high. Figure 7 is a graph showing the relationship between antenna spacing and plasma density. This chart is the result of the argon plasma produced under the same conditions as in Fig. 6. The electric paddle density is a relationship between 値<40 mm and 値20 mm when 60 mm is obtained, and it can be seen that as the antenna spacing becomes narrow, the plasma density becomes high. Compared with the pitch density when the antenna spacing is 40mm and 60mm, the plasma density of the antenna spacing is 20 mm (when the antenna is discharged) is a particularly high figure 8, which is A graph showing the relationship between antenna spacing and ion current distribution inhomogeneity. This chart is the result of the nitrogen plasma produced under the same conditions as in Fig. 6. The unevenness of the ion current distribution is a relationship between 値 < 40 mm at 20 mm and < 60 mm. The ion current distribution is an indicator for confirming one of the plasma distributions (uniformity). However, this is also because the antenna spacing becomes narrow and the unevenness is reduced. It can be seen that when the antenna spacing is 20mm, the situation is the most uniform. Figure 9 is a graph showing the relationship between the antenna spacing and the effective charge density of the insulating film. In the same graph as in Fig. 6, the distance between the antenna array 28 and the substrate 42 was set to = 25 mm, and a film formation gas was used to form a film using TEOS gas = l 〇 / 200 sccm'. The result of the Si02 insulating film. The effective charge density of the formed SiO 2 insulating film is 关系 値 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 60 60 60 60 60 60 60 60 60 60 60 60 60 60 60 60 60 60 60 60 60 60 60 60 60 After that, the effective charge density is reduced. It can be seen that when the antenna spacing is 20 mm, it is the least, and a good insulating film can be obtained. Here, Fig. 12 is a graph showing the relationship between the plasma density and the effective charge density of the insulating film. The horizontal axis of this graph is the plasma density (cm'3), and the vertical axis is the effective charge density (crrT2). It can be seen that the effective charge density of the insulating film becomes sufficiently small at a range where the plasma density exceeds about 7. 〇 xl 〇 9 cm _ 3 . From this, it can be known that, in the range where the plasma density φ exceeds about 7.〇xl〇9cnT3, a discharge is generated between adjacent antennas, and therefore, the effective charge density of the insulating film is reduced. 〇, is a graph showing the relationship between the antenna spacing and the insulation withstand voltage of the insulating film. This graph is the result of forming the 8102 insulating film under the same conditions as in Fig. 9. The insulating pressure resistance of the formed SiO 2 insulating film is a relationship between 値 < 20 mm at 60 mm and 40 40 mm. Although it is 値40mm when it is 20mm, this difference is a measurement error, and the two can be considered as equivalent. When the antenna spacing is 2 〇 mm, the dielectric withstand voltage is sufficiently high, and it is known that -19-200948218 has formed a good film as an insulating film. Here, Fig. 13' is a graph showing the relationship between the plasma density and the insulation withstand voltage of the insulating film. The horizontal axis of this chart is the plasma density ()
’縱軸係爲絕緣膜之絕緣耐壓（MV/cm)。可以得知，絕 緣膜之絕緣耐壓’同樣的係在電槳密度超過約7 〇xl〇9cm-3的範圍處，而變得充分高。由此事，可以得知，在電漿 密度超過約7.〇xl〇9cm-3的範圍處，於相鄰接之天線間係 產生放電’因此’絕緣膜之絕緣耐壓係變高。The vertical axis is the insulation withstand voltage (MV/cm) of the insulating film. It can be seen that the insulation withstand voltage of the insulating film is also sufficiently high in the range where the electric blade density exceeds about 7 〇 xl 〇 9 cm -3 . From this, it can be seen that in the range where the plasma density exceeds about 7. 〇 xl 〇 9 cm -3 , a discharge is generated between the adjacent antennas. Therefore, the insulation withstand voltage of the insulating film becomes high.
圖 U，係爲展示當設定爲天線本體39之半徑a = 3mm，天線間隔 r = 20mm、40mm、60mm時，天線本體 39之半徑a與天線間隔r之間的比例r/a。比例r/a之値 ，當天線間隔r=20mm時，係爲約6.7，當r=40mm時， 係爲約13.3，當60mm時，係爲20。僅有在天線間隔 r= 20mm時，係爲比例r/a$約11.6。在本實施例的情況 中，如前述一般，若是爲電漿密度超過約7.0xl09Crn_3的 範圍處，則可以考慮在天線之間係產生有放電，但是，由 圖7之圖表，可以得知，在相鄰接之天線間而產生放電的 天線間隔r之上限，係爲約3 5 mm。 由以上之結果，可以得知，在相鄰接之2根的天線元 件26之間放電而產生的電漿，就算是相較於在各個的天 線元件2 6與接地之間放電所產生的電漿’亦爲非常高密 度且均一性良好者。此種電漿狀態’係當天線間隔 35mm、換言之、係當天線本體39之半徑a與天線間隔r 間的比例爲r/a S 1 1.6 ’且相鄰接之2根的天線元件2 6彼 -20- 200948218 此係並不相互接觸的間隔之範圍中，而能夠有效率地使其 產生。如同圖6以及圖7中所示一般’當天線間隔== 2 0mm ( r/a =約 6 · 7 )的情況時，相較於從天線間隔= 4 0mm、6 0mm所預想之電漿發光強度、電漿密度，係具備 有極高之發光強度以及密度。出現有此一顯著之效果處’ 係爲r $ 3 5 mm (r/a$約11·6)的範圍處。 又，若是對所形成之膜的實效電荷密度或絕緣耐壓作 0 考慮，則藉由以天線間之放電所產生之電漿而堆積的膜， 其膜質係爲良好。又，由於電漿之均一性係爲良好，故能 夠得到膜厚均一性良好之膜。 另外，本發明之電漿處理裝置，係並不被限定於電漿 CVD裝置，只要是將天線陣列作爲電漿源而使用並產生 電漿，再使用所產生之電漿而對基板進行處理者，則可適 用在任意之裝置中。例如，亦可採用將天線陣列配設在與 成膜容器相異之電漿產生容器內，並從電漿產生容器來將 Q 電漿（自由基）輸送至成膜容器內的遠端遙控電漿方式。 在本發明之電漿處理裝置中，當於上述之處理參數下 而藉由電漿來對基板作處理的情況時，成膜容器內之壓力 、溫度、處理時間、氣體流量等，係爲因應於處理對象物 '成膜容器以及基板之尺寸等而適宜決定者，而並不被限 定爲上述實施型態。又，在本發明中，處理對象物係並不 被作任何限定。又，成膜氣體，係爲因應於處理對象物而 適宜決定者。 天線元件之根數，雖係並沒有限制，但是，考慮所產 -21 - 200948218 生之電漿的均一性，係以使得在相鄰接之天線元件間而給 電位置成爲相互對向之側壁的方式來配設爲理想。又，天 線元件之配置、尺寸等，亦並沒有特別限制。 本發明，基本上係爲如同以上所述一般者。 以上’雖係針對本發明之電漿處理裝置而作了詳細說 明，但是本發明係並非爲被限定於上述實施形態，只要是 在不脫離本發明之主旨的範圍內，不用說，係亦可進行各 種之改良或變更。 【圖式簡單說明】 [圖1]展示本發明之電漿處理裝置的構成之其中一種 實施形態的槪略圖。 [圖2]展示圖1所示之天線陣列的構成之平面槪略圖 〇 [圖3]展示在將相鄰接之2根的天線元件間之間隔設 定爲20mm的情況時之天線元件週邊的發光之模樣的圖。 [圖4]展示在將相鄰接之2根的天線元件間之間隔設 定爲40mm的情況時之天線元件週邊的發光之模樣的圖。 [圖5]展示在將相鄰接之2根的天線元件間之間隔設 定爲60mm的情況時之天線元件週邊的發光之模樣的圖。 [圖6]展示天線間隔與電漿發光強度（中央平均）之 關係的圖表。 [圖7]展示天線間隔與電漿密度之關係的圖表。 [圖8]展示天線間隔與離子電流分布之不均一度間的 -22- 200948218 關係之圖表。 [圖9]展示天線間隔與絕緣膜的實效電荷密度之關係 的圖表。 [圖1 0 ]展示天線間隔與絕緣膜的絕緣耐壓之關係的圖 表。 [圖11]展示天線本體之半徑與天線間隔之關係的槪念 圖。 φ [圖12]展示電漿密度與絕緣膜的實效電荷密度之關係 的圖表。 [圖13]展示電漿密度與絕緣膜的絕緣耐壓之關係的圖 表。 [圖14]展示先前技術之電漿CVD裝置的構成之其中 一例的槪略圖。 [圖15]展示圖14所示之天線陣列的構成之平面槪略 圖。 ❹ ' 【主要元件符號說明】 10' 70:電漿CVD裝置（電漿處理裝置） 12 :成膜容器 15 :氣體供給部 1 7 :排氣部 1 9 :供給管 21 :供給孔 23 :排氣管 -23- 200948218 2 5 :排氣孔 26 :天線元件 2 8 :天線陣列 3 0 :加熱器 32 :基板平台 34 ;高頻電力供給部 36 :分配器 3 8 :阻抗整合器 3 9 :天線本體 40 :圓筒構件 42:處理對象基板（基板） 47 :氣體擴散室 48 :成膜室 -24 -Figure U shows the ratio r/a between the radius a of the antenna body 39 and the antenna spacing r when the radius a = 3 mm of the antenna body 39 and the antenna spacing r = 20 mm, 40 mm, 60 mm. The ratio r/a is 6.7 when the antenna spacing is r = 20 mm, about 13.3 when r = 40 mm, and 20 when 60 mm. Only when the antenna spacing r = 20mm, the ratio r/a$ is about 11.6. In the case of the present embodiment, as described above, if the plasma density exceeds about 7.0 x 109 Crn_3, it is considered that a discharge occurs between the antennas. However, as shown in the graph of Fig. 7, The upper limit of the antenna spacing r at which the discharge occurs between adjacent antennas is about 35 mm. From the above results, it can be seen that the plasma generated by the discharge between the adjacent two antenna elements 26 is equivalent to the electricity generated by discharging between the respective antenna elements 26 and the ground. The pulp is also very high density and uniform. The plasma state is such that when the antenna spacing is 35 mm, in other words, the ratio between the radius a of the antenna body 39 and the antenna spacing r is r/a S 1 1.6 'and the adjacent antenna elements 2 6 -20- 200948218 This system is not in contact with each other and can be efficiently generated. As shown in Fig. 6 and Fig. 7, generally, when the antenna spacing == 20 mm (r/a = about 6 · 7), the plasma luminescence is expected compared to the antenna spacing = 40 mm, 60 mm. The strength and plasma density are extremely high in luminous intensity and density. There is such a significant effect at the range of r $ 3 5 mm (r/a$ about 11.6). Further, in consideration of the effective charge density or the withstand voltage of the formed film, the film deposited by the plasma generated by the discharge between the antennas is excellent in film quality. Further, since the uniformity of the plasma is good, a film having a uniform film thickness can be obtained. Further, the plasma processing apparatus of the present invention is not limited to the plasma CVD apparatus, and is used as long as the antenna array is used as a plasma source to generate plasma, and the generated plasma is used to process the substrate. , can be applied to any device. For example, the antenna array may be disposed in a plasma generating container different from the film forming container, and the Q plasma (free radical) may be transported from the plasma generating container to the remote control electric power in the film forming container. Pulp mode. In the plasma processing apparatus of the present invention, when the substrate is treated by plasma under the above-mentioned processing parameters, the pressure, temperature, processing time, gas flow rate, etc. in the film forming container are adapted. The object to be processed is appropriately determined depending on the size of the film formation container and the substrate, and is not limited to the above embodiment. Further, in the present invention, the object to be treated is not limited at all. Further, the film forming gas is appropriately determined in accordance with the object to be processed. Although the number of antenna elements is not limited, considering the uniformity of the plasma produced by the period from 21 to 200948218, the power supply positions between adjacent antenna elements are opposite to each other. The way to match is ideal. Further, the arrangement and size of the antenna components are not particularly limited. The present invention is basically as described above. The above is described in detail with respect to the plasma processing apparatus of the present invention, but the present invention is not limited to the above-described embodiments, and it is needless to say that it may be within the scope of the gist of the present invention. Make various improvements or changes. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic view showing an embodiment of a configuration of a plasma processing apparatus according to the present invention. [Fig. 2] A plan view showing the configuration of the antenna array shown in Fig. 1. [Fig. 3] shows the luminescence of the periphery of the antenna element when the interval between two adjacent antenna elements is set to 20 mm. The picture of the appearance. Fig. 4 is a view showing a pattern of light emission around the antenna element when the interval between two adjacent antenna elements is set to 40 mm. Fig. 5 is a view showing a pattern of light emission around the antenna element when the interval between two adjacent antenna elements is set to 60 mm. Fig. 6 is a graph showing the relationship between the antenna interval and the plasma luminous intensity (central average). [Fig. 7] A graph showing the relationship between the antenna spacing and the plasma density. [Fig. 8] A graph showing the relationship of -22-200948218 between the antenna spacing and the unevenness of the ion current distribution. Fig. 9 is a graph showing the relationship between the antenna spacing and the effective charge density of the insulating film. [Fig. 10] A graph showing the relationship between the antenna spacing and the insulation withstand voltage of the insulating film. [Fig. 11] A view showing the relationship between the radius of the antenna body and the antenna spacing. φ [Fig. 12] shows a graph showing the relationship between the plasma density and the effective charge density of the insulating film. Fig. 13 is a graph showing the relationship between the plasma density and the insulation withstand voltage of the insulating film. Fig. 14 is a schematic view showing an example of the configuration of a prior art plasma CVD apparatus. Fig. 15 is a plan view showing the configuration of the antenna array shown in Fig. 14. ❹ ' [Main component symbol description] 10' 70: Plasma CVD device (plasma processing device) 12: Film forming container 15: Gas supply unit 17: Exhaust portion 1 9 : Supply tube 21: Supply hole 23: Row Trachea-23- 200948218 2 5 : Vent hole 26: Antenna element 2 8 : Antenna array 3 0 : Heater 32 : Substrate platform 34 ; High-frequency power supply unit 36 : Distributor 3 8 : Impedance integrator 3 9 : Antenna body 40: cylindrical member 42: processing target substrate (substrate) 47: gas diffusion chamber 48: film forming chamber-24 -