200947637 六、發明說明： 【發明所屬之技術領域】 本發明是有關一個發光二極體的封裝方法。由於發光 .二極體為增加亮度所需的電流愈來愈大，或以交流駆動，所造成 的熱散溢問題也愈來愈嚴重。為了克服溫度上升晶片與導線架的 熱膨脹係數不合的諸多問題，本案也揭示利用將蟲晶完晶 粒’經由蒸鑛兼具有反射及增加粘著的銀鉬混合中間層，最終轉 移至钥金屬上，形成金屬基底複晶元件晶粒；使其散熱效果增加 © 或熱膨脹係數匹配效果更為良好，防止因過熱而造成元件晶粒與 導線架之間的斷裂。同時本案也揭示一種以玻璃作為封裝發光二 極體之主要材料，使目前以樹脂為發光二極體封裝主體容易老化 問題得以解決。 【先前技術】 發光二極體，由於亮度的增加以及效率的提高，在將 來極有可能取代傳統的照明設備。但也是因於亮度的提升及功率 Q 的增大，或以交流軀動，所產生的熱，對封裝所造成的衝擊也愈 來愈嚴重。首先散熱問題；一般的鋁基座或銅基座導線架，和半 導體材料基底的熱膨脹係數有相當大的差異，在溫度升高及降低 的時候，造成熱應力，而使元件之間半導體材料基底與導線架粘 著處所容易剝落，致使元件失效。如何避免元件因溫差剝落而造 成元件失效，增加粘著是本研究所要解決的第一個問題。 其次，發光二極艘的光如果沒有加以適當向上反射的 話’亮度無法有效提昇’此外這些雜亂散射的光會產生熱，使整 個封裝的散熱問題變得更加嚴重。習知的技術是將反射金屬鍍在 晶片下部的四周圍，讓光向上反射。但是，現有金屬膜和半導體 4 200947637 間的黏著性不良’容易剝落。因此，如何有效的蒸錢一層金屬來 造成光的反射，同時增加黏著度是本案所要專研的第二個問題。 最後’現有的發光二極體，一般都是用樹脂來封裝；部分並將發 •光粉體放置在樹脂裡’以發出紅、藍、綠或是混合形成白光或 以藍、黃等光混合形成白光。由於傳統的LED會因 •率操作’而導致溫度上升，顧些透赌脂受_喊化f造成 顏色逐漸變黃’使透級特來愈差；很不幸由於惡性循環，透 光效率愈來愈差，無法透過的光反而會被樹脂吸收又變成熱；在 ❾這麵環下’發光二極體就會絲愈劣化。因此，如何避免有機 樹脂的劣化’是本案所欲解決的第三個問顆。 【發明内容】 本發明的第一個目的是用來解決未來高功率發光二 極體的基板問題；如何將現有的吸收性基板轉移到有散熱 良好的金屬基板上，讓它的發光效率更為提升，是目前各 大廠家所努力的方向。 習知的技藝是將基板轉移到銅基板或其它基板上（如 砷化鎵基板錯系基板）’但它們的散熱性不佳，遠不如銅、 鋁、鉬等金屬。但基於熱膨脹係數之考量，可將LED轉移 到鉬的基板上，因鉬基板的膨脹係數較為優異，和半導體 的熱膨脹係數較為接近，在熱脹冷縮時較不易裂開。 但問題並非如此簡單，我們發現若將鉬和發光元件的基板 直接以覆晶技術封裝在一起，則會使LED發出的光反射率 降低。但同時在另一方面，為了使光的反射率變好，可將 銀鍍在發光元件的基板上，但經多次實驗發現，銀的附著 力不佳。 5 200947637 因此經過多方嘗試，發現如果將銀與鉬混合，以不同 比例，分成兩層或三廣’分別鍍在發光元件的基板上，例 如在第一層鍵上百分之八十的銀百分之二十的鉬混合，第 二層鑛上百分之三十的銀與百分之七十的銦’第三層則將 百分百钥，並將鍵好之蟲晶晶粒轉移到钥的基底層上；再 經背面磨薄，做成的MS基底發光元件。不但具有低膨脹係 數差異的好處，還可以增加的附著力，同時可解決反射層 和熱膨脹的問題。 本發明的第二個目的是要解決封裝時，透明樹脂 (resin)在高功率時，因通過較大電流所成的零件劣化問 題，及增加發光二極體的使用壽命。 本人發現，如果在封裝時，採用玻璃取代傳統之樹 脂，並在玻璃中摻入一些無機的染料，其中之無機螢光粉 體包括（Y1-x_yCdxCey)3(Ali-zGaz)5〇i2’ 其中 χ+ygl，〇$x，y，z 或（Cdi-xCex)SC2Al3〇i2 或 SrB4〇7:Sm 或 SrGa2S4:Eu 或200947637 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to a method of packaging a light-emitting diode. Due to the luminescence, the current required to increase the brightness of the diode is increasing, or the problem of heat dissipation caused by AC turbulence is becoming more and more serious. In order to overcome the problems of temperature rise between the wafer and the lead frame, the thermal expansion coefficient of the wafer is also inconsistent. The present invention also reveals that the use of the crystallized grains of the insect crystals through the vaporization of the silver-molybdenum mixed intermediate layer with reflection and adhesion is finally transferred to the key metal. On the top, the metal substrate polycrystalline element crystal grains are formed; the heat dissipation effect is increased by © or the thermal expansion coefficient matching effect is better, and the breakage between the element die and the lead frame due to overheating is prevented. At the same time, the present invention also reveals a main material using glass as a packaged light-emitting diode, so that the problem that the resin is a light-emitting diode package body is easily aged. [Prior Art] Light-emitting diodes are highly likely to replace conventional lighting devices in the future due to an increase in brightness and an increase in efficiency. However, due to the increase in brightness and the increase in power Q, or the heat generated by AC body movement, the impact on the package is becoming more and more serious. First heat dissipation problem; the general aluminum base or copper base lead frame, and the semiconductor material substrate have a considerable difference in thermal expansion coefficient, causing thermal stress when the temperature is raised and lowered, and the semiconductor material substrate between the components It is easy to peel off when it is adhered to the lead frame, causing the component to fail. How to avoid the component failure due to the temperature difference peeling off, and increasing the adhesion is the first problem to be solved in this study. Secondly, if the light of the light-emitting diode is not properly reflected upwards, the brightness cannot be effectively increased. In addition, the scattered light will generate heat, which will make the heat dissipation problem of the whole package more serious. The conventional technique is to plate the reflective metal around the lower portion of the wafer to reflect the light upward. However, the adhesion between the conventional metal film and the semiconductor 4 200947637 is easily peeled off. Therefore, how to effectively steam a layer of metal to cause light reflection, while increasing the adhesion is the second problem to be studied in this case. Finally, the existing 'light-emitting diodes are generally packaged with resin; some of them are placed in the resin in the form of 'light powder' to emit red, blue, green or mixed to form white light or to mix light such as blue or yellow. Forming white light. Since the traditional LED will cause the temperature to rise due to the operation of the rate, the color of the gambling is caused by the gradual change of the yellow color, which makes the transilation worse. It is unfortunate that due to the vicious circle, the light transmission efficiency is getting worse. The worse, the impenetrable light will be absorbed by the resin and become hot; under this ring, the light-emitting diode will deteriorate. Therefore, how to avoid the deterioration of organic resin is the third question to be solved in this case. SUMMARY OF THE INVENTION The first object of the present invention is to solve the problem of the substrate of the high-power light-emitting diode in the future; how to transfer the existing absorbent substrate to the metal substrate with good heat dissipation, so that its luminous efficiency is more Improvement is the direction that all major manufacturers are working hard. The conventional technique is to transfer the substrate to a copper substrate or other substrate (e.g., a gallium arsenide substrate). However, their heat dissipation is not as good as that of metals such as copper, aluminum, and molybdenum. However, based on the thermal expansion coefficient, the LED can be transferred to the substrate of molybdenum, because the expansion coefficient of the molybdenum substrate is superior, and the thermal expansion coefficient of the semiconductor is relatively close, and it is less likely to be cracked during thermal expansion and contraction. However, the problem is not so simple. We have found that if the substrates of molybdenum and light-emitting elements are directly packaged by flip chip technology, the light reflectance emitted by the LEDs is lowered. On the other hand, on the other hand, in order to make the reflectance of light better, silver can be plated on the substrate of the light-emitting element, but it has been found through many experiments that the adhesion of silver is not good. 5 200947637 Therefore, after many attempts, it was found that if silver and molybdenum are mixed, they are divided into two layers or three broadly in different proportions, respectively, on the substrate of the light-emitting element, for example, 80% of the silver on the first layer of keys. Twenty-five percent of the molybdenum mixture, 30 percent of the silver in the second layer of minerals and 70 percent of the indium 'the third layer will be 100% key, and transfer the bonded crystallites to The MS substrate light-emitting element is formed on the base layer of the key and then thinned by the back surface. Not only does it have the benefit of a low coefficient of expansion difference, it also increases adhesion and solves the problem of reflective layers and thermal expansion. A second object of the present invention is to solve the problem of deterioration of parts caused by a large current when a transparent resin is high in power, and to increase the service life of the light-emitting diode. I have found that if the resin is used to replace the traditional resin and incorporate some inorganic dye into the glass, the inorganic phosphor powder includes (Y1-x_yCdxCey)3(Ali-zGaz)5〇i2' χ+ygl,〇$x,y,z or (Cdi-xCex)SC2Al3〇i2 or SrB4〇7:Sm or SrGa2S4:Eu or
BaMgzAlwOKEu等’利用這種玻璃來包覆封裝整個半導體元 件，讓它們分別發出紅光、綠光、藍光或白光，可以解決 Q 因高溫所造成的樹脂劣化問題。或是將這些染料加入玻璃 中先做成玻璃透鏡，然後將玻璃透鏡嵌入封裝的上面，周 圍再用水玻璃加以密封’如此一來便無須用到樹脂；也可 以在密封中灌入惰性氣體來防止零件劣化，增加使用壽命。 【實施方式】 如圖1A所示，圖1A是本案所揭示的一個發光元件晶 粒，它的上面是半導體層11，12為含有銀鉬的反射中間 層，13為鉬金屬層，以這種方式形成的發光二極體發光元 件，除了有12反射層中間層增加光的反射外，還兼具黏著 6 200947637 作用，使底下的鉬金屬層（和半導體熱膨脹係數比較接近） 基底能牢阁，增進散熱的效果。當然為將來便於交流電操 二，^雙甸順偏工作防止逆偏崩潰’也可以將兩枚發光二 極體反方向包裝成一個發光元件晶粒如圖1B所示。 * 我們<以將圖1的元件直接應用在玻璃封裝的發光元 •件上，如圈2A所示，它有一個玻璃封裝本體21，一個導 線架Μ，〆個發光元件22，在玻璃封裝本體21中間’因 在^裝時，採用玻璃取代傳統之樹脂’並在玻璃中摻入一 些無機的染料，其中之無機螢光粉體包括 ❹ ^^cdXeyMAli-zGaz)5〇i2 ’ 其中 x+yS卜 〇Sx，y，zSl 或 (Cdi-xCex)SC2Al3〇i2 或 SrB4〇7:Sm 或 SrGazScEu 或 BaMg2All6〇47:Eu等，利用這種玻璃來包覆封裝整個半導體元 件，讓它們分別發出紅光、綠光、藍光或白光，可以解決 因高溫所造成的樹脂劣化問題。或疋將發光本體做成一個 燈泡狀，如圖2B所示’它有一個燈泡外殼罩24，在燈泡 外殼罩上’可以有一榮光塗佈層25含有許多的勞光粉粒， 讓它們分別發出紅光、綠光、藍光或混成白光。在發光本 φ 體的中間有一惰性氣體空間或是真空狀態，一個導線架 23，一個發光元件22。 或是將其做成表面黏著形的LED封裝，如圖3A所示， 它有一個玻璃封裝本體31’ 一個導線架33, 一個發光元件 32’在發光本體31中間’’因在封裝時，採用玻璃取代傳 統之樹脂，並在玻璃中換入一些無機的染料，其中之無機 螢光粉體包括（ΥΗ-ΧάΧεγΜΑΐΜΟΒΑΟ”，其中 x+y$i，〇 S X，y，1 或（cd卜xCex)SC2Al3〇i2 或 SrB4〇7:Sm 或 SrGa2S4:Eu 或BaMg2Alie〇47:Eu等，利用這種玻璃來包覆封裝整個半導 體元件’讓它們分別發出紅光、綠光、藍光或白光，可以 7 200947637 解決因高溫所造成的樹脂劣化問題。或是將發光本體做成 一個燈泡狀，如圖3B所示’它有一個燈泡外殼罩34 ’在 燈泡外殼罩上，可有一螢光塗佈層35 ’可有許多的螢光粉 粒’讓它們分別發出紅光、綠光、藍光或白光。在發光本 體的中間有一惰性氣體空間，一個導線架33 ’ 一個發光元 .件 32。 或是將其做成金屬罐外加玻璃透鏡封裝，如圖4所示， 它有一個玻璃透鏡41，金屬或陶瓷外殼44，43為半導體 ^ 發光元件，42為導線架。同樣可以將螢光粉體加在玻璃透 鏡中或在燈泡外殼内側塗佈螢光粉體層45，可有許多的螢 光粉粒，讓它們分別發出紅光、綠光、藍光或白光。 或將其做成柱狀結構，如圖5所示，它有玻璃本體層 51 ;同樣可以將螢光粉體加在玻璃本體中，半導體發光元 件52 ’導線架53。也可做成中空燈泡型狀，它有一個燈泡 外殼罩55,在燈泡外殼罩上，可有一螢光塗佈層56，可有 許多的螢光粉粒’讓它們分別發出紅光、綠光、藍光或白 光。在發光本體的中間有一惰性氣體空間，一個導線架53， φ 一個發光元件52。 綜上所述’這些結構除了可以如圖1所揭示的具有反 射中間層與匹配金屬層這樣的單顆結構外 ，也可以把它兩 顆^對背來組成ϋό件’分別取代23、33、43或53中 的半導體發光το件，做為一個交流㈣型式發光裝置用。 8 200947637 【圖式簡單說明】 圖1A 含有銀鉬反射中間層發光晶粒 圖1B 兩枚發光二極體反方向包裝成一個發 光元件晶粒 圖2A 一般形狀玻璃封裝的LED封裝 ' 圖2B 一般形燈泡狀的LED封裝 圖3A 表面黏著形的LED封裝 圖3B 表面黏著形玻璃燈泡外殻LED封裝 典 圖4 圖5 玻璃透鏡罐狀LED封裝 玻璃柱狀結構LED封裝 200947637BaMgzAlwOKEu et al. used this glass to encapsulate and package the entire semiconductor element, allowing them to emit red, green, blue or white light, respectively, to solve the problem of resin degradation caused by high temperature. Or add these dyes into the glass to make a glass lens, then insert the glass lens on the top of the package, and then seal it with water glass. This way, no resin is needed. It can also be filled with inert gas in the seal to prevent it. Parts deteriorate and increase service life. [FIG. 1A] FIG. 1A is a light-emitting element die disclosed in the present invention, the upper surface of which is a semiconductor layer 11, 12 is a reflective intermediate layer containing silver molybdenum, and 13 is a molybdenum metal layer. The light-emitting diode light-emitting element formed by the method has the effect of increasing the reflection of light by the intermediate layer of 12 reflective layers, and also has the function of adhesion 6 200947637, so that the bottom molybdenum metal layer (and the thermal expansion coefficient of the semiconductor is relatively close) Improve the heat dissipation effect. Of course, for the future, it is convenient to exchange electric power. Second, ^Shuangdian work in reverse to prevent reverse collapse. The two light-emitting diodes can also be packaged in the opposite direction into a light-emitting element die as shown in Fig. 1B. * We < apply the components of Figure 1 directly to the illuminating element of the glass package, as shown in circle 2A, which has a glass package body 21, a lead frame 〆, and a light-emitting element 22, in a glass package In the middle of the body 21, the glass is used to replace the traditional resin, and some inorganic dyes are incorporated into the glass. The inorganic phosphor powder includes ❹ ^^cdXeyMAli-zGaz)5〇i2 ' where x+ yS 〇Sx,y,zSl or (Cdi-xCex)SC2Al3〇i2 or SrB4〇7:Sm or SrGazScEu or BaMg2All6〇47:Eu, etc., using this glass to encapsulate the entire semiconductor components, let them emit red respectively Light, green light, blue light or white light can solve the problem of resin deterioration caused by high temperature. Or the light body is made into a light bulb shape, as shown in FIG. 2B, 'it has a bulb outer cover 24, and the light bulb outer cover' may have a glare coating layer 25 containing a lot of lacquer particles, so that they are separately emitted. Red, green, blue or mixed white. In the middle of the illuminating body φ, there is an inert gas space or a vacuum state, a lead frame 23, and a light-emitting element 22. Or it is made into a surface-adhesive LED package, as shown in FIG. 3A, which has a glass package body 31'. A lead frame 33, and a light-emitting element 32' is disposed in the middle of the light-emitting body 31. The glass replaces the traditional resin, and some inorganic dyes are exchanged in the glass, wherein the inorganic phosphor powder includes (ΥΗ-ΧάΧεγΜΑΐΜΟΒΑΟ), where x+y$i, 〇SX, y, 1 or (cd bxCex) SC2Al3〇i2 or SrB4〇7:Sm or SrGa2S4:Eu or BaMg2Alie〇47:Eu, etc., using this glass to encapsulate the entire semiconductor component 'Let them emit red, green, blue or white light respectively, can be 7 200947637 Solve the problem of resin deterioration caused by high temperature. Or make the light-emitting body into a bulb shape, as shown in Fig. 3B, 'it has a bulb housing cover 34' on the bulb housing cover, which may have a fluorescent coating layer 35' There may be many fluorescent particles 'to make them emit red, green, blue or white light respectively. There is an inert gas space in the middle of the light body, a lead frame 33 'one light element. 32. Or it The metal can is provided with a glass lens package, as shown in Fig. 4, which has a glass lens 41, a metal or ceramic casing 44, 43 is a semiconductor light emitting element, and 42 is a lead frame. The fluorescent powder can also be applied to the glass lens. The phosphor powder layer 45 is coated on the inside of the bulb casing, and there may be a plurality of phosphor particles to emit red, green, blue or white light respectively, or a columnar structure, as shown in FIG. As shown, it has a glass body layer 51; the same can be applied to the glass body, the semiconductor light-emitting element 52' lead frame 53. It can also be made into a hollow bulb shape, which has a bulb housing cover 55, On the bulb cover, there may be a fluorescent coating layer 56, which may have a plurality of fluorescent particles 'to make them respectively emit red, green, blue or white light. There is an inert gas space in the middle of the light body, a lead frame 53, φ a light-emitting element 52. In summary, these structures can be composed of two single-sided structures, in addition to a single structure having a reflective intermediate layer and a matching metal layer as disclosed in FIG. Piece The semiconductor light-emitting device in the 23, 33, 43 or 53 is used as an alternating current (four) type light-emitting device. 8 200947637 [Simple description of the figure] Figure 1A contains the silver-molybdenum reflective intermediate layer light-emitting crystal Figure 1B Two light-emitting two The polar body is packaged in the opposite direction as a light-emitting element die. Figure 2A General-shaped glass-encapsulated LED package' Figure 2B General-shaped bulb-shaped LED package Figure 3A Surface-adhesive LED package Figure 3B Surface-adhesive glass bulb case LED package Figure 4 Figure 5 Glass lens can LED package glass columnar LED package 200947637
【主要元件符號說明】 11 化合物半導體層 12 中間反射粘著層 13 鉬金屬層 21 玻璃封裝本體 23 導線架 22 發光元件 24 玻璃燈泡外殼罩 25 螢光塗佈層 31 玻璃封裝本體 33 導線架 32 發光元件 34 玻璃燈泡外殼罩 35 螢光塗佈層 41 玻璃透鏡 44 金屬或陶瓷外殼 42 導線架 43 發光元件 51 玻璃柱狀結構本體層 52 發光元件 53 導線架 55 中空柱狀結構燈泡型狀 56 螢光塗佈層 10[Main component symbol description] 11 compound semiconductor layer 12 intermediate reflection adhesive layer 13 molybdenum metal layer 21 glass package body 23 lead frame 22 light-emitting element 24 glass bulb outer cover 25 fluorescent coating layer 31 glass package body 33 lead frame 32 light Element 34 Glass bulb cover 35 Fluorescent coating layer 41 Glass lens 44 Metal or ceramic housing 42 Lead frame 43 Light-emitting element 51 Glass column structure Body layer 52 Light-emitting element 53 Lead frame 55 Hollow column structure Bulb shape 56 Fluorescence Coating layer 10